TW201005758A - Copper powder for conductive paste, and conductive paste - Google Patents
Copper powder for conductive paste, and conductive paste Download PDFInfo
- Publication number
- TW201005758A TW201005758A TW098121454A TW98121454A TW201005758A TW 201005758 A TW201005758 A TW 201005758A TW 098121454 A TW098121454 A TW 098121454A TW 98121454 A TW98121454 A TW 98121454A TW 201005758 A TW201005758 A TW 201005758A
- Authority
- TW
- Taiwan
- Prior art keywords
- copper powder
- atm
- conductive paste
- copper
- particle
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 239000002245 particle Substances 0.000 claims abstract description 90
- 238000000889 atomisation Methods 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000004332 silver Substances 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 17
- 229910000831 Steel Inorganic materials 0.000 claims description 11
- 239000010959 steel Substances 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 16
- 239000010703 silicon Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 38
- 238000000034 method Methods 0.000 description 27
- 230000003647 oxidation Effects 0.000 description 27
- 238000007254 oxidation reaction Methods 0.000 description 27
- 239000010949 copper Substances 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 238000009826 distribution Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 12
- 230000009467 reduction Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 238000009689 gas atomisation Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000009692 water atomization Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- ZRPAUEVGEGEPFQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2 ZRPAUEVGEGEPFQ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- 241001414875 Drosophila iri Species 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/10—Alloys based on copper with silicon as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008181149 | 2008-07-11 | ||
| JP2008263668 | 2008-10-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201005758A true TW201005758A (en) | 2010-02-01 |
Family
ID=41506972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098121454A TW201005758A (en) | 2008-07-11 | 2009-06-25 | Copper powder for conductive paste, and conductive paste |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2010004852A1 (fr) |
| KR (1) | KR20110041432A (fr) |
| CN (1) | CN102015164B (fr) |
| TW (1) | TW201005758A (fr) |
| WO (1) | WO2010004852A1 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010037653A (ja) * | 2008-07-11 | 2010-02-18 | Mitsui Mining & Smelting Co Ltd | 導電性ペースト用銅粉及び導電性ペースト |
| JP5932638B2 (ja) * | 2010-05-19 | 2016-06-08 | 三井金属鉱業株式会社 | 導電性ペースト用銅粉及び導電性ペースト |
| JP5243510B2 (ja) * | 2010-10-01 | 2013-07-24 | 富士フイルム株式会社 | 配線材料、配線の製造方法、及びナノ粒子分散液 |
| JP5652369B2 (ja) * | 2010-10-20 | 2015-01-14 | 日立金属株式会社 | 太陽電池用導体 |
| JP5785433B2 (ja) * | 2011-04-28 | 2015-09-30 | 三井金属鉱業株式会社 | 低炭素銅粒子 |
| KR20130027784A (ko) * | 2011-09-08 | 2013-03-18 | 삼성전기주식회사 | 외부 전극용 도전성 페이스트, 이를 이용한 적층 세라믹 전자부품 및 이의 제조방법 |
| JP2016176133A (ja) * | 2015-03-23 | 2016-10-06 | 株式会社村田製作所 | 銅粉末および該銅粉末を用いた導電性ペースト |
| KR102397204B1 (ko) | 2016-12-28 | 2022-05-11 | 도와 일렉트로닉스 가부시키가이샤 | 구리 분말 및 그의 제조 방법 |
| JP7039126B2 (ja) | 2016-12-28 | 2022-03-22 | Ｄｏｗａエレクトロニクス株式会社 | 銅粉およびその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58104970A (ja) * | 1981-12-16 | 1983-06-22 | Matsushita Electric Ind Co Ltd | 導電性ペイント |
| JP2702796B2 (ja) * | 1990-02-23 | 1998-01-26 | 旭化成工業株式会社 | 銀合金導電性ペースト |
| CN1051862C (zh) * | 1991-04-20 | 2000-04-26 | 旭化成工业株式会社 | 高温烧结用糊剂及其应用 |
| JPH0773730A (ja) * | 1993-06-29 | 1995-03-17 | Asahi Chem Ind Co Ltd | 導電性粉末 |
| DE69637333T2 (de) * | 1995-06-27 | 2008-10-02 | International Business Machines Corp. | Kupferlegierungen für Chipverbindungen und Herstellungsverfahren |
| JP2000273506A (ja) * | 1999-03-19 | 2000-10-03 | Asahi Chem Ind Co Ltd | 新規な銅合金粉末とその製造方法 |
| JP2003064433A (ja) * | 2001-08-20 | 2003-03-05 | Hohoemi Brains Inc | 装飾用銅合金 |
| JP3984534B2 (ja) * | 2002-11-19 | 2007-10-03 | 三井金属鉱業株式会社 | 導電性ペースト用の銅粉及びその製造方法 |
| JP4914065B2 (ja) * | 2005-12-21 | 2012-04-11 | 大研化学工業株式会社 | 積層セラミックコンデンサ電極用ニッケル粉末、電極形成用ペースト及び積層セラミックコンデンサ |
| JP5405814B2 (ja) * | 2007-12-28 | 2014-02-05 | 三井金属鉱業株式会社 | 導電性ペースト用銅粉及び導電性ペースト |
| JP5155743B2 (ja) * | 2008-03-04 | 2013-03-06 | 三井金属鉱業株式会社 | 導電性ペースト用銅粉及び導電性ペースト |
| JP2010013730A (ja) * | 2008-06-05 | 2010-01-21 | Mitsui Mining & Smelting Co Ltd | 導電性ペースト用銅粉及び導電性ペースト |
| JP2010037653A (ja) * | 2008-07-11 | 2010-02-18 | Mitsui Mining & Smelting Co Ltd | 導電性ペースト用銅粉及び導電性ペースト |
| JP2010196105A (ja) * | 2009-02-24 | 2010-09-09 | Mitsui Mining & Smelting Co Ltd | 導電性ペースト用銅粉及び導電性ペースト |
-
2009
- 2009-06-19 JP JP2010519712A patent/JPWO2010004852A1/ja active Pending
- 2009-06-19 WO PCT/JP2009/061241 patent/WO2010004852A1/fr not_active Ceased
- 2009-06-19 KR KR1020107022969A patent/KR20110041432A/ko not_active Abandoned
- 2009-06-19 CN CN2009801144572A patent/CN102015164B/zh not_active Expired - Fee Related
- 2009-06-25 TW TW098121454A patent/TW201005758A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102015164A (zh) | 2011-04-13 |
| WO2010004852A1 (fr) | 2010-01-14 |
| KR20110041432A (ko) | 2011-04-21 |
| CN102015164B (zh) | 2013-06-12 |
| JPWO2010004852A1 (ja) | 2011-12-22 |
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