200952317 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種發電裝置，特別涉及一種太陽能發電 裝置。 【先前技術】 隨著科技之不斷發展，各種電器設備也越來越多，人 們對電能之需求也越來越大。然而在現有技術中，發電設 備主要分為火力發電、水力發電和風力發電（請參見“太陽 月b的廣闊前景”，李申生，《物理學報》，MM年第5期， 45_47頁）。火力發電消耗大量煤碳資源或油汽資源，不但 成本高昂，而且會使人類生存之自然環境受到嚴重破壞， =時在雜這些能源之過程中，又會對大氣產生極大之污 之現^發電&地理條件祕限制，^且伴隨水資源短缺 實情況’水力發電之前景也並不 ❹ -到氣候條件之限制，並對風速 而：力：:： 大力發展。曰箭估m 及極同’也不適合於 t電轉換之效率不佳，因此無法實現對太陽！;缺乏，並田 【發明内容】 陽此之有效利用。 陽 能發此，有必要提供—種既環保又方便使用之太 一種太陽能發電裝置，其 — 層、一金屬封料JS 、 外设、一壓電材料 所迷外殼，其包括： 電相層及-致動器。 上蓋複數個側壁以及一下蓋，所 6 200952317200952317 IX. Description of the Invention: [Technical Field] The present invention relates to a power generating device, and more particularly to a solar power generating device. [Prior Art] With the continuous development of technology, there are more and more kinds of electrical equipment, and people's demand for electric energy is also growing. However, in the prior art, power generation equipment is mainly classified into thermal power generation, hydroelectric power generation, and wind power generation (see "The Broad Prospects of the Sun Moon b", Li Shensheng, "Journal of Physics, MM, No. 5, pp. 45-47). Thermal power generation consumes a lot of coal or oil and gas resources, which is not only costly, but also causes serious damage to the natural environment in which human beings live. In the process of mixing these energy sources, it will cause great pollution to the atmosphere. & Geographical conditions are limited, ^ and with the shortage of water resources, 'the prospect of hydropower is not good - to the limits of climatic conditions, and wind speed: force::: vigorous development. It is not suitable for the efficiency of t-electric conversion, so it is impossible to achieve the sun! ; Lack, Bintian [Invention] The effective use of Yang. In the case of Yangneng, it is necessary to provide a kind of solar power generation device that is both environmentally friendly and convenient to use. It is a layer, a metal sealing material JS, a peripheral, and a piezoelectric material casing, including: an electrical phase layer and - Actuator. Cover a plurality of side walls and a cover, 6 200952317
述上蓋為一太陽能集熱板，所述側壁為熱絕緣材料，所述 下蓋為一散熱元件。所述壓電材料層，固定於側壁之内表 面。所述金屬材料層，鍍於壓電材料層之表面。所述導熱 體，位於上蓋之正下方，用於傳導上蓋收集之太陽光熱量， 該導熱體之侧面與金屬材料層相接觸。所述壓電薄膜層， 鍍於導熱體與金屬材料層相接觸之表面，並在受熱膨脹後 與金屬材料層之間形成過盈配合。所述致動器，連接於導 熱體與下蓋之間，該致動器可根據所受溫度之變化，帶動 設置在導熱體上之壓電薄膜層與壓電材料層表面之金屬材 料層相互擠壓，藉由壓電效應產生電能。 相對於現有技術，所述之太陽能發電裝置能將收集到 之太陽光之熱量轉化為電能，並且不易受位置和天氣條件 之影響，提高了使用之方便性，而不會產生任何污染。相 對於太陽能電池，可大幅降低製作成本，並且轉換效率可 有效提升。 【實施方式】 以下將結合附圖對本發明作進一步之詳細說明。 請參閱圖1，本發明實施方式太陽能發電裝置100包 括一外殼10、一壓電材料層20、一金屬材料層30、一導 熱體40、一壓電薄膜層50和一致動器60。 所述外殼10包括一由太陽能集熱板構成之上蓋101、 一由熱絕緣材料組成之側壁102、一由散熱元件組成之下 蓋103。所述上蓋101位於太陽能發電裝置100之頂端， 其為真空集熱管組成，可有效吸收太陽光產生之熱輻射， 7 200952317 且具有耐空曬、不易爆管之特點。所述側壁1〇2位於太陽 能發電裝置100之侧面，其為陶曼纖維材料，可有效減少 熱量輻射出去，且具有低導熱、耐高溫之性質。所述下蓋 103位於太陽能發電裝置1〇〇之底端，其為熱管，可迅速 之將與其接觸之元件之熱量傳導出去。 所述壓電材料層20固定於侧壁102之内表面，其為 納米氧化鋅。所述金屬材料層30形成於壓電材料層2〇'靠 近於太陽能發電裝置100中心之内表面上，金屬材料層3〇 採用金、銀、鉑等貴金屬材料形成。該壓電材料層2〇與金 屬材料層30之介面形成一肖特基接觸，用以使壓電材料層 20中之電子能聚集在金屬材料層30之表面。所謂肖特美 接觸是指金屬和半導體材料相接觸之時候，在介面處半導 體之能帶彎曲，形成肖特基勢壘。 丨脏-V丨儿〃、丄应「力，用以傅導上蓋1的 ❹ 收集之太陽能熱量，其側面與金屬材料層30相接觸。該導 熱體40並可在外殼10構成之空間内上下運動。該導^體 40包括一與下蓋1〇3之上表面相對之表面401、自該^面 401垂直延伸出之一凸起402及一與金屬材料層3〇相接觸 之侧面403,所述凸起4〇2用於太陽能發電裝置在工作時， 與下蓋103相牴觸’將導熱體40上多餘之熱量傳導出去。 所述導熱體40為金屬導熱材料，其可有效之將上蓋1〇1 收集到之熱量傳導給其他元件，導熱體40在受熱條件下 會產生一定之膨脹。 所述壓電薄膜層50形成於導熱體40與金屬材料層3〇 8 200952317 .相接觸之表面，該壓電薄膜層50與金屬材料層30之間在 •叉熱膨脹後形成過盈配合，且當致動器60運動時，致動器 60可帶動壓電薄膜層5〇與金屬材料層3〇相對運動。所述 壓電薄膜層50為納米氧化鋅、锆鈦酸鉛等壓電材料。 所述致動器60固定於下蓋1〇3之上表面與導熱體4〇 表面401之間，其由彈性元件6〇2和記憶合金體6〇1組成。 當上蓋101沒有接收到光照時，彈性元件6〇2之長度小於 0 其自然長度，即處於壓縮狀態且其產生之向彈力大於導熱 U 體40對彈性元件602之壓力，使導熱體4〇之上表面抵觸 於上蓋101 ;而記憶合金體601之長度大於其初始長度， 即處於拉伸狀態。當記憶合金體601達到其形變溫度時， 就會收縮至初始長度。 請參閱圖2和圖3,工作時，在初始沒有接受到光照 狀態下，由於彈性元件6〇2向上之彈力大於導熱體4〇對彈 性元件602之壓力，則使導熱體4〇之上表面抵觸於上蓋 ❹ 1〇1。而此時，記憶合金體601之長度大於其初始長度，而 處於拉伸狀態。當上蓋101接收到太陽光照射時，產生一 疋熱里，導熱體4〇受熱膨脹，並將熱量傳導給記憶合金體 ’當記憶合金體601所受溫度超過其形變溫度時，記憶 合金體601由於要恢復到其初始長度，則產生一向下^ 力。當導熱體4。向下之壓力和記憶合金體601向下之拉力 大於彈性7G件602向上之彈力和壓電薄膜層5〇與金屬材料 層30之間之摩擦力時導熱體4〇向下運動，直至導熱體 40上之凸起402與下蓋103相接觸。此時，因為下蓋1〇3 9 200952317 為熱管具有較強之散熱能力，導熱體40及記憶合金體601 上之溫度能在較短之時間内下降，導熱體4〇收縮，此時， 形成於導熱體40上之壓電薄骐層5〇與金屬材料層3〇之間The cover is a solar collector plate, the side wall is a heat insulating material, and the lower cover is a heat dissipating component. The layer of piezoelectric material is fixed to the inner surface of the sidewall. The metal material layer is plated on the surface of the piezoelectric material layer. The heat conductor is located directly under the upper cover for conducting heat of sunlight collected by the upper cover, and the side of the heat conductor is in contact with the metal material layer. The piezoelectric film layer is plated on a surface of the heat conductor that is in contact with the metal material layer, and forms an interference fit with the metal material layer after being thermally expanded. The actuator is connected between the heat conductor and the lower cover, and the actuator can drive the piezoelectric material layer disposed on the heat conductor and the metal material layer on the surface of the piezoelectric material layer according to the temperature change Extrusion produces electrical energy by the piezoelectric effect. Compared with the prior art, the solar power generation device can convert the collected heat of sunlight into electric energy, and is not easily affected by the position and weather conditions, thereby improving the convenience of use without any pollution. Compared with solar cells, the production cost can be greatly reduced, and the conversion efficiency can be effectively improved. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 1, a solar power generation device 100 according to an embodiment of the present invention includes a casing 10, a piezoelectric material layer 20, a metal material layer 30, a heat conductor 40, a piezoelectric film layer 50, and an actuator 60. The outer casing 10 includes an upper cover 101 composed of a solar heat collecting plate, a side wall 102 composed of a heat insulating material, and a lower cover 103 composed of a heat dissipating member. The upper cover 101 is located at the top of the solar power generation device 100, and is composed of a vacuum heat collecting tube, which can effectively absorb the heat radiation generated by sunlight, and has the characteristics of being resistant to air drying and not blasting. The side wall 1〇2 is located on the side of the solar power generating device 100, which is a Tauman fiber material, which can effectively reduce heat radiation and has low heat conduction and high temperature resistance. The lower cover 103 is located at the bottom end of the solar power unit 1 , which is a heat pipe, and can quickly conduct heat of the components in contact therewith. The piezoelectric material layer 20 is fixed to the inner surface of the side wall 102, which is nano zinc oxide. The metal material layer 30 is formed on the inner surface of the piezoelectric material layer 2'' near the center of the solar power generation device 100, and the metal material layer 3' is formed of a noble metal material such as gold, silver or platinum. The piezoelectric material layer 2 is in contact with the interface of the metal material layer 30 to form a Schottky contact for collecting electrons in the piezoelectric material layer 20 on the surface of the metal material layer 30. The so-called Schottmei contact means that when the metal and the semiconductor material are in contact, the band of the semiconductor at the interface is bent to form a Schottky barrier. The visceral-V 丨 〃 丄 丄 「 「 「 「 「 「 「 「 「 「 「 「 「 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 傅 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能The guiding body 40 includes a surface 401 opposite to the upper surface of the lower cover 1〇3, a protrusion 402 extending perpendicularly from the surface 401, and a side surface 403 contacting the metal material layer 3〇. The protrusion 4〇2 is used for the solar power generation device to contact the lower cover 103 during operation, and the excess heat on the heat conductor 40 is conducted out. The heat conductor 40 is a metal heat conductive material, which can effectively The heat collected by the upper cover 1〇1 is transmitted to other components, and the thermal conductor 40 is expanded under heat. The piezoelectric film layer 50 is formed on the thermal conductor 40 and the metal material layer 3〇8 200952317. The surface of the piezoelectric film layer 50 and the metal material layer 30 form an interference fit after the thermal expansion of the fork, and when the actuator 60 moves, the actuator 60 can drive the piezoelectric film layer 5 and the metal material layer. 3〇 relative motion. The piezoelectric film layer 50 is nano zinc oxide A piezoelectric material such as lead zirconate titanate. The actuator 60 is fixed between the upper surface of the lower cover 1〇3 and the surface 401 of the thermal conductor 4, and is composed of an elastic member 6〇2 and a memory alloy body 6〇1. When the upper cover 101 does not receive the illumination, the length of the elastic member 6〇2 is less than 0, its natural length, that is, in a compressed state and the resulting elastic force is greater than the pressure of the thermal conductive body 40 against the elastic member 602, so that the thermal conductor 4〇 The upper surface is in contact with the upper cover 101; and the length of the memory alloy body 601 is greater than its initial length, that is, in a stretched state. When the memory alloy body 601 reaches its deformation temperature, it shrinks to the initial length. See Fig. 2 and Fig. 3. When working, in the initial state of no illumination, since the elastic force of the elastic member 6〇2 is greater than the pressure of the thermal conductor 4〇 against the elastic member 602, the upper surface of the thermal conductor 4〇 is in contact with the upper cover ❹ 1〇 1. At this time, the length of the memory alloy body 601 is greater than the initial length, and is in a stretched state. When the upper cover 101 receives sunlight, a heat is generated, and the heat conductor 4 is thermally expanded and conducts heat to the heat. memory When the temperature of the memory alloy body 601 exceeds its deformation temperature, the memory alloy body 601 generates a downward force due to its return to its original length. When the heat conductor 4, the downward pressure and the memory alloy body 601 When the downward pulling force is greater than the upward elastic force of the elastic 7G member 602 and the friction between the piezoelectric film layer 5 and the metal material layer 30, the heat conductor 4〇 moves downward until the protrusion 402 and the lower cover on the heat conductor 40 103 contact. At this time, because the lower cover 1〇3 9 200952317 has a strong heat dissipation capability for the heat pipe, the temperature on the heat conductor 40 and the memory alloy body 601 can be lowered in a short period of time, and the heat conductor 4 shrinks. At this time, between the piezoelectric thin layer 5〇 formed on the heat conductor 40 and the metal material layer 3〇
為非過盈配合狀態，當記憶合金體6〇1上之溫度小於其形 變溫度時’記憶合金體601 g)為不需要恢復到其初始長度 而失去向下之拉力。而此時，由於導熱體4〇向下之壓力小 於彈’:生兀件602向上之彈力，導熱體4。向上運動，直至抵 靠上蓋ιοί之下表面。當記憶合金體6〇1上之溫度再次達 到其形變溫度時’重複上料作。祕導熱體4()不斷之上 了運動和熱服冷縮，且壓電薄膜層5〇與金屬材料層3〇在 爻熱膨脹後為過盈配合，形成於壓電材料層2〇表面之金屬 =料層30與形成於導熱體4〇表面之壓電薄膜層5〇之間之 橫向擠壓，使壓電材料層2〇與壓電薄膜層5〇產生一定之 形變，由於壓電效應產生一電場；在電場之作用下，位於 肖特基表面之電荷導出，形成電流。並且可藉由將複數個 太陽能發電裝置1〇〇串聯使用，將下蓋1〇3傳導出去之熱 量提供給下一個太陽能發電裝置100使用，使太陽光產生 之熱量此有效之利用。藉由分別在金屬材料層3〇和壓電薄 膜層50表面連接出一根導線3〇1和5〇1，金屬材料層3〇 表面之電荷在電場之作用下之移動，在導線301和501中 形成電肌’在導線3G1和501之另-端可連接—電力儲存 裝置或者負載。 本發明太陽能發電裝置能將收集到之太陽光之熱量 轉化為電能，並_1_不易受位置和天氣條件之影響，提高了 使用之方便性，而不會產生任何污染。相對於太陽能電池， 200952317 可大幅降低製作成本，ϋ且轉換效率可有效提升。 綜上所述，本發明符合發明專利要件，爰依法提出 利申請。惟，以上所述者僅為本發明之較佳實施方式， 發明之範圍並*以上述實施方式為限，舉凡熟悉本蔽 之人士援依本發明之精神所作之料修飾或變化，二 蓋於以下申請專利範圍内。 … 【圖式簡單說明】In the non-interference fit state, when the temperature on the memory alloy body 6〇1 is less than its deformation temperature, the 'memory alloy body 601g' loses the downward pulling force without returning to its original length. At this time, since the downward pressure of the heat conductor 4 is smaller than the spring force of the spring 602, the heat conductor 4 is. Move up until it reaches the lower surface of the upper cover. When the temperature on the memory alloy body 6〇1 reaches its deformation temperature again, the coating is repeated. The thermal conductor 4() is continuously heated and contracted, and the piezoelectric film layer 5〇 and the metal material layer 3 are subjected to an interference fit after thermal expansion, and the metal formed on the surface of the piezoelectric material layer 2 = transverse extrusion between the material layer 30 and the piezoelectric film layer 5〇 formed on the surface of the heat conductor 4, causing a certain deformation of the piezoelectric material layer 2〇 and the piezoelectric film layer 5〇, due to the piezoelectric effect An electric field; under the action of an electric field, the charge on the surface of the Schottky is derived to form a current. Further, by using a plurality of solar power generation devices 1 in series, the heat conducted by the lower cover 1〇3 is supplied to the next solar power generation device 100, and the heat generated by the sunlight is effectively utilized. By connecting a wire 3〇1 and 5〇1 to the surface of the metal material layer 3〇 and the piezoelectric film layer 50, respectively, the charge of the surface of the metal material layer 3 is moved by the electric field, and the wires 301 and 501 The formation of the electric muscle 'can be connected at the other end of the wires 3G1 and 501 - the power storage device or the load. The solar power generating device of the present invention can convert the heat of the collected sunlight into electric energy, and is less susceptible to the influence of the position and weather conditions, thereby improving the convenience of use without any pollution. Compared with solar cells, 200952317 can significantly reduce production costs, and conversion efficiency can be effectively improved. In summary, the present invention complies with the requirements of the invention patent, and makes an application for the benefit of the law. However, the above-mentioned embodiments are merely preferred embodiments of the present invention, and the scope of the invention is not limited to the above-described embodiments, and those skilled in the art will be able to modify or change the materials according to the spirit of the present invention. The scope of the following patent application. ... [Simple description of the schema]
-圖1係本發明實〜方式太陽能發電裝置之工作狀態剖 面示意圖； 一圖2係本發明實施方式太陽能發電裝置之初 始狀態剖 面示意圖； 一圖3係本發明實施方式太陽能發電裝置之回復狀態别 面示意圖。 【主要組件符號說明】 太陽能發電裝置 100 上蓋 101 下蓋 103 金屬材料層 30 表面 401 側面 403 致動器 60 彈性元件 602 外殼 10 侧壁 102 壓電材料層 20 導熱體 40 凸起 402 壓電薄膜層 50 記憶合金體 601 11- Figure 1 is a schematic cross-sectional view showing the operation state of the solar power generation device of the present invention; Fig. 2 is a schematic cross-sectional view showing the initial state of the solar power generation device according to the embodiment of the present invention; and Fig. 3 is a recovery state of the solar power generation device according to the embodiment of the present invention. Schematic diagram. [Main component symbol description] Solar power device 100 Upper cover 101 Lower cover 103 Metal material layer 30 Surface 401 Side 403 Actuator 60 Elastic element 602 Case 10 Side wall 102 Piezoelectric material layer 20 Thermal conductor 40 Bump 402 Piezoelectric film layer 50 memory alloy body 601 11