200951239 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種處理基材的塗佈系統，包含：— 種腔室配置，其含有一第一製程腔室及一第二製程腔室； 其中該第一製程腔室係配置在該塗佈系統之連續（in_line) 部分的向前路徑上，而該第二製程腔室係配置在該塗佈系 統之連續部分的回程路徑上。此外，本發明係有關於一種 ® 塗佈基材的方法，特別是在-種如上所述的塗佈系統内。 【先前技術】 在許多技術應用中，多層堆疊係在一連串塗佈步驟中 沈積在基材上。例如，在一 TFT(薄膜電晶體）金屬化製程 中利用濺射製程沈積兩或三種不同金屬。由於不同製程 步驟之不同塗佈速率並且因為該等層的厚度不同，在該等 塗佈站中沈積不同層的處理時間可能大幅度變化。 藝 為了沈積一多層堆疊，一些塗佈和處理腔室的配置已 被提出》例如’使用塗佈腔室的連續配置以及塗佈腔室的 叢集配置。一典型的叢集配置包含一中央處理腔室以及一 些與其連接的塗佈腔室。可配備該等塗佈腔室以執行相同 或不同的塗佈製程。但是，雖然在連續系統中，該製程的 處理相當簡單，但處理時間係由最長的處理時間來決定。 因此，製程的效率受到影響。相反地，叢集工具容許不同 的循環時間。但是，處理可能會十分複雜，其需要在該中 央處理腔室内提供複雜的移送系統。 4 200951239 在EP 1 801 843 A1號文件中已描述結合連續和叢集概 念的另一種概念，其内容在此藉由引用的方式併入本文 中。該文件描述一種沈積一 TFT層堆疊的塗佈系統，其擁 有一載入鎖定室、一金屬化站’用於一第一金屬化製程、 一中央處理腔室、兩個金屬化站，用於一第二金屬化製程、 以及一第二金屬化站，用於該第一製程。用於該第二製程 的該等金屬化腔室係彼此平行配置並交替使用。用於該第 參一金屬化製程的該等製程腔室係連績配置，因此每一個基 材在兩個腔室内處理。該系統的循環時間係藉由組合一連 續及一叢集概念來縮短，因為該組合最小化處理複雜度， 同時增加產量。 US 2007/020903 A2號文件揭示—種製造一薄膜堆疊 的方法及一種用來在一基材上形成該薄膜堆疊的處理系 統。 .但是，若一特定塗佈腔室必須進行維修或清潔處理， ® 例如，為置換濺射靶材’該塗佈系統的操作必須完全停止。 【發明内容】 "° ° 本發明之一目的在於增加塗佈系統的整體產量和效 能’特別是在TFT金屬應用方面。 此目的係藉由提供根據申請專利範圍第1項所述之塗 佈系統，以及根據申請專利範圍第U項所述之塗佈一基材 的方法來解決。該等附屬項係關於本發明的較佳特徵結 一種根據本發明之用於處理基材的塗佈系統包含·一 5 200951239 種腔室配置’其含有一第一製程腔室及一第二製程腔室； 其中該第一製程腔室係配置在該塗饰系統之連續部分 的向前路徑上’而該第二製程腔室係配置在該塗饰系統之 連續部分的回程路徑上。該第—製程腔室和該第二製程腔 室皆配置在一第一移送室和一第二移送室之間該等連續 部分係配置來將基材從該第—連續部分的向前路徑移送至 該第二連續部分的回程路徑，反之亦然。 該向前路徑係定義為基材從一載入鎖定室移至該第二 移送室的路徑，而制料徑係定義衫材從該第二料 室移至-載出鎖定室的路徑’在正常操作模式下，即若 該第-及第二製程腔室兩者皆在操作中。就沿著一傳送路 徑的傳送而言，基材可支撐在基材載座上。基材可依附在 基材載座上n實施例中，基材可通過該塗佈系統而 不需要載座，例如，利用氣墊傳送系統。 鲁 該第一製程腔室和該第二製程腔室係與該載入鎖定/ 載出敎站及該第-移送室平行且連續配置1第一移送 室係配置在該載人鎖定/載出鎖定站和該第—製程腔室及 該第—製程腔室之間，並且係配置來將從該載入鎖定/載 出鎖定站接收到的基材分別移送至該第—製㈣室和該第 二製程腔室。此外’該塗佈系統包含與該第一製程腔室及 該第二製程腔室連續配置的第二移送室，並且係配置來將 從該第-製程腔室或該第二製程腔室接收到的基材移送至 另一個腔室。 該等製程腔室可以是任何處理站，特別是用來在一第 6 200951239 一基材上沈積一個層或一個層堆疊的塗佈站。在一 TFT塗 佈製程中’在該第一基材上沈積兩層、三層或更多金屬層。 該第一製程腔室和該第二製程腔室可以是金屬塗佈站，200951239 VI. Description of the Invention: [Technical Field] The present invention relates to a coating system for treating a substrate, comprising: a chamber configuration including a first processing chamber and a second processing chamber Wherein the first process chamber is disposed in a forward path of the in-line portion of the coating system, and the second process chamber is disposed on a return path of a continuous portion of the coating system. Furthermore, the invention relates to a method of coating a substrate, in particular in a coating system as described above. [Prior Art] In many technical applications, a multilayer stack is deposited on a substrate in a series of coating steps. For example, two or three different metals are deposited by a sputtering process in a TFT (Thin Film Transistor) metallization process. Due to the different coating rates for different process steps and because of the different thicknesses of the layers, the processing time for depositing different layers in such coating stations can vary widely. In order to deposit a multilayer stack, some of the coating and processing chamber configurations have been proposed, e.g., using a continuous configuration of coating chambers and a cluster configuration of coating chambers. A typical cluster configuration includes a central processing chamber and a plurality of coating chambers coupled thereto. These coating chambers can be equipped to perform the same or different coating processes. However, although the processing of the process is relatively simple in a continuous system, the processing time is determined by the longest processing time. Therefore, the efficiency of the process is affected. Conversely, clustering tools allow for different cycle times. However, processing can be quite complex, requiring a complex transfer system to be provided within the central processing chamber. Another concept of combining continuous and cluster concepts has been described in the document EP 1 801 843 A1, the contents of which are incorporated herein by reference. This document describes a coating system for depositing a TFT layer stack having a load lock chamber, a metallization station 'for a first metallization process, a central processing chamber, and two metallization stations for A second metallization process and a second metallization station are used for the first process. The metallization chambers for the second process are arranged in parallel with one another and used interchangeably. The process chambers used in the first metallization process are in a continuous configuration so that each substrate is processed in two chambers. The cycle time of the system is shortened by combining a continuous and a clustering concept because the combination minimizes processing complexity while increasing throughput. Document US 2007/020903 A2 discloses a method of making a film stack and a processing system for forming the film stack on a substrate. However, if a particular coating chamber must be repaired or cleaned, ® for example, to replace the sputtering target' the operation of the coating system must be completely stopped. SUMMARY OF THE INVENTION One of the objects of the present invention is to increase the overall throughput and effectiveness of a coating system, particularly in the application of TFT metal. This object is solved by providing a coating system according to the first application of the patent application, and a method of coating a substrate according to the application of claim U. The present invention relates to a preferred embodiment of the present invention. A coating system for treating a substrate according to the present invention comprises: a 5 200951239 chamber configuration having a first process chamber and a second process a chamber; wherein the first process chamber is disposed on a forward path of a continuous portion of the finishing system and the second process chamber is disposed on a return path of a continuous portion of the finishing system. The first process chamber and the second process chamber are disposed between a first transfer chamber and a second transfer chamber, the continuous portions being configured to transfer the substrate from the forward path of the first continuous portion The return path to the second consecutive portion, and vice versa. The forward path is defined as the path of the substrate moving from a load lock chamber to the second transfer chamber, and the feed path defines the path from the second chamber to the load lock chamber. In normal operating mode, ie both the first and second process chambers are in operation. The substrate can be supported on the substrate carrier for transport along a transport path. The substrate can be attached to the substrate carrier n. The substrate can pass through the coating system without the need for a carrier, for example, using an air bearing delivery system. The first process chamber and the second process chamber are parallel to the load lock/loading station and the first transfer chamber, and the first transfer chamber is disposed in the manned lock/load Locking station and the first process chamber and the first process chamber, and configured to transfer the substrate received from the load lock/load lock station to the first (four) chamber and the The second process chamber. Further, the coating system includes a second transfer chamber continuously disposed with the first process chamber and the second process chamber, and configured to receive from the first process chamber or the second process chamber The substrate is transferred to another chamber. The process chambers can be any processing station, particularly a coating station for depositing a layer or a layer stack on a substrate of a 2009 200951239 substrate. Two, three or more metal layers are deposited on the first substrate in a TFT coating process. The first process chamber and the second process chamber may be metal coating stations.
1夕!J 如，以利用一第一濺射製程提供一鉬層。該第三製程腔室 和該第四製程腔室可以是金屬塗佈站，例如，以利用一第 二濺射製程在該第一基材上提供一鋁層。其他基材，例如， 第二、第三、第四基材等，可進入該塗佈系統並與該第—1. For example, a molybdenum layer is provided by a first sputtering process. The third process chamber and the fourth process chamber may be metal coating stations, for example, to provide an aluminum layer on the first substrate using a second sputtering process. Other substrates, for example, second, third, fourth substrates, etc., can enter the coating system and with the first
基材依序且同時在該塗佈系統内處理。即，不同製程和移 送步驟可以同時發生。 該塗佈系統的特徵在於處理和製程站的特殊配置。兩 個移送室皆可從每一個製程腔室接收基材，以及將基材饋 送進入該第一及第二製程腔室兩者内。因此，若該第一或 製程腔至之一因為維修、保養、清潔等而停機，該第 和第一製程腔至的另一者仍可運作，並且讓製程基材通 、該製程腔至。當然’當該第一或第二製程腔室之一停機 時’處理基材的循環時間會因為兩個方向的每一個基材皆 過該第或該第二製程腔室而增加》因此在該連續路徑 會因為缺少第一或第二製程腔室而有一瓶頸。整體塗佈 '、统的產量和效率在該向前路徑和該回程路徑共用一特定 製程腔至時而降低。但是’這可避免停止整個塗佈系統的 之必要I·生，因此改善該塗佈系統的可運用性。 —與EP 1 801 843 A1號文件中描述的概念相比引進另 移送·至，其容許一連續路徑上的基材繞過一特定塗佈 Μ用與該特定塗佈站平行配置之一對應塗佈站。本發 7 200951239 明之概念可應用在每一種塗佈系統上，其中一連續系統（戈 組合的連續-叢集系統）的向前路徑上之製程腔室係與該連 續系統（或組合的連續-叢集系統）的回程路徑上之對應製程 腔室平行配置，兩個製程腔室皆配置在一第 一移送室和一The substrate is processed sequentially and simultaneously within the coating system. That is, different process and transfer steps can occur simultaneously. The coating system is characterized by a special configuration of the process and process station. Both transfer chambers can receive the substrate from each of the process chambers and feed the substrate into both the first and second process chambers. Therefore, if one of the first or process chambers is shut down due to repair, maintenance, cleaning, etc., the other of the first and first process chambers is still operable, and the process substrate is passed to the process chamber. Of course, 'when one of the first or second process chambers is shut down, the cycle time for processing the substrate will increase because each of the substrates in both directions passes through the second or the second process chamber." A continuous path can have a bottleneck due to the lack of a first or second process chamber. The overall coating yield and efficiency are reduced as the forward path and the return path share a particular process chamber. However, this avoids the need to stop the entire coating system, thus improving the applicability of the coating system. - introducing a further transfer to the substrate described in EP 1 801 843 A1, which allows the substrate on a continuous path to be bypassed by a specific coating and coated with one of the parallel configurations of the particular coating station Cloth station. The concept of the present invention can be applied to each coating system in which a continuous system (continuous-cluster system of the Go combination) has a process chamber on the forward path and the continuous system (or a combined continuous-cluster) The corresponding process chambers on the return path of the system are arranged in parallel, and the two process chambers are all arranged in a first transfer chamber and one
第二移送室之間，其容許基材在該向前路徑（或該回程路徑） 上傳送，而藉由從該向前路徑換至該回程路徑或反之亦 然，繞過該兩個腔室的其中一個。此概念在分別朝該第三 及第四塗佈腔室前進之路途上，以及分別從該第三和第四 塗佈腔室回返之路途上的兩個製程腔室内通常執行相同製 程時特別適用。 較佳地該腔室配置包含一載入鎖定/載出鎖定站以 分別將基材鎖定在該塗佈系統内及/或將基材鎖定在該塗 佈系統外。該第一製程腔室和該第二製程腔室係與該載入 鎖定/載出鎖定站、該第一移送室、及該第二移送室連續 配置。 明確地說，該第一製程腔室和該第二製程腔室包含利 用一第一塗佈製程在基材上沈積一層的塗佈工具。該第一 塗佈製程可以是一金屬化製程，例如鉬金屬化製程。該塗 佈製程可以是一濺射製程。 在本發明之較佳實施例中，該腔室配置包含至少一第 二製程腔室，用以處理一基材，其中該第三製程腔室與該 第二移送室連接。 特別地，該腔室配置包含與該第三製程腔室平行配置 且與該第二移送室連接的第四製程腔室。該第四製程腔室 8 200951239 可與該第三製程腔室平行配置，並且該第二移送室係經配 置以將分別從該第-製程腔室和該第二製程腔室接收到的 基材移送至該第三製程腔室或該第四製程腔室。在該第三 製程腔室和該第四製程腔室t，可沈積相同塗層例如該 第三和第四製程腔室可以是金屬塗佈#，以利用一濺射製 程在該基材上沈積銘層。因為TFT㈣内的銘層厚度比下 方和上方的鉬層厚度大許多之事實，肖第三製程腔室和該 ❿ Φ 第四製程腔室係如叢集工具般運作，例如，其係交替從該 第二移送室載入。 事實上，該第-移送室係經提供以在該第一和該第二 製程腔室及，或該載入鎖定/载出鎖定室的至少兩者之： 移送基材。該第二移送室係經提供以在該第_、該第二、 該第三及/或該第四製程腔室的至少兩者之間移送基材。 該第一及/或該第二移送室可以是真空移送室。 在-常規製程t ’將-第一基材從該載入鎖定室沿著 -向前路徑傳送1著-第—基材固持件通過該第一:送 室’進入該第一製程腔室’以在其内取得一第一塗層。然 後將該第-基材送入該第二移送室，並進入該第三製程腔 室或該第四製程腔1：，以在其内取得一第二塗層。之後， 該第-基材在-回程路徑上傳送，反向通過㈣二移送室 進入該第二製程腔室，以在其中取得_第三㈣。然後將 該第-基材傳送通過該第—移送室，進人該載㈣定室， 以從該塗佈系統移出該已塗佈的基材。 或者，例如，若該第一塗佈腔室無運轉，可將在該向 9 200951239 前路徑上傳送的基材轉移送至該第二製程腔室，以取得一 第-塗層。或纟’在返回該第一移送室途中，可將在該回 程路徑上傳送的基材移送至該第一製程腔室而非該第二塗 佈腔至’以取得一第三塗層，例& ’若該第二塗佈腔室無 運轉。 每當該第-製程腔室和該第二製程腔室運轉時，該組 合的連續叢集系統提供高效率。若一或多個腔室無法使Between the second transfer chambers, which allows the substrate to be transported on the forward path (or the return path), and by switching from the forward path to the return path or vice versa, bypassing the two chambers One of them. This concept is particularly applicable when the same process is normally performed in the two process chambers on the way to the third and fourth coating chambers, respectively, and on the way back from the third and fourth coating chambers, respectively. . Preferably, the chamber configuration includes a load lock/load lock station to lock the substrate within the coating system and/or to lock the substrate outside of the coating system, respectively. The first process chamber and the second process chamber are continuously disposed with the load lock/load lock station, the first transfer chamber, and the second transfer chamber. Specifically, the first process chamber and the second process chamber comprise a coating tool that deposits a layer on the substrate using a first coating process. The first coating process can be a metallization process such as a molybdenum metallization process. The coating process can be a sputtering process. In a preferred embodiment of the invention, the chamber configuration includes at least one second processing chamber for processing a substrate, wherein the third processing chamber is coupled to the second transfer chamber. In particular, the chamber configuration includes a fourth process chamber disposed in parallel with the third process chamber and coupled to the second transfer chamber. The fourth process chamber 8 200951239 can be disposed in parallel with the third process chamber, and the second transfer chamber is configured to receive substrates from the first process chamber and the second process chamber, respectively Transfer to the third process chamber or the fourth process chamber. In the third process chamber and the fourth process chamber t, the same coating may be deposited, for example, the third and fourth process chambers may be metal coated # to deposit on the substrate by a sputtering process Ming layer. Because the thickness of the inscription layer in the TFT (4) is much larger than the thickness of the molybdenum layer below and above, the third process chamber and the fourth process chamber operate as a cluster tool, for example, the system alternates from the first The second transfer room is loaded. In effect, the first transfer chamber is provided for transporting at least two of the first and second process chambers, or the load lock/out lock chamber: The second transfer chamber is configured to transfer the substrate between at least two of the first, second, third, and/or fourth process chambers. The first and/or second transfer chamber may be a vacuum transfer chamber. In the conventional process t 'the first substrate is transferred from the load lock chamber along the forward path 1 - the first substrate holder passes through the first: the transfer chamber 'into the first process chamber' To obtain a first coating therein. The first substrate is then fed into the second transfer chamber and into the third process chamber or the fourth process chamber 1 to obtain a second coating therein. Thereafter, the first substrate is transported on a return path, and the second (four) transfer chamber is passed through the second process chamber to obtain a third (four) therein. The first substrate is then conveyed through the first transfer chamber and into the carrier (4) chamber to remove the coated substrate from the coating system. Alternatively, for example, if the first coating chamber is not operational, the substrate conveyed on the pre-passing path 2009 20093939 can be transferred to the second processing chamber to obtain a first coating. Or 纟 'on the way back to the first transfer chamber, the substrate transferred on the return path can be transferred to the first process chamber instead of the second coating chamber to 'to obtain a third coating, for example & 'If the second coating chamber is not running. The combined continuous cluster system provides high efficiency whenever the first process chamber and the second process chamber are in operation. If one or more chambers cannot be made
❹ 用’該系統仍可以降低的效率工作，但是可確保該塗佈系 統的可運用性幾乎不中斷。 較佳地，該第三製程腔室和該第四製程腔室包含塗佈 工具’以利用一第二塗佈製程在基材上沈積—層。該第二 塗佈製程可以是-金屬化製程’例如鋁金屬化製程。該第 二塗佈製程可以是一濺射製程。 該第一製程腔室和該第二製程腔室係經配置以提供一 第塗佈製程，而該第二製程腔室和該第四製程腔室係經 配置以提供一第二塗佈製程。例如，在TFT塗佈系統中， 該第-製程可以是一第一金屬化製程，而該第二製程可以 是-第二金屬化r程。可利用濺射方法執行一個或兩個製 程。 特別地，該載入鎖定/載出鎖定站包含一載入鎖定室 和一载出鎖定室，該載人鎖定室界定在該塗㈣統内處理 之基材的向前路徑之開端；該載出鎖定室界定該基材之回 程路徑的末端。例如，該向前路徑係界定在該載入鎖定室 和該第二移送室之間，而該回程路徑係界定在該第二移送 10 200951239 至和該載出鎖定至之間。該向前路徑或該回程路徑可能中 斷^配置在該路#上之—腔室無運轉時，例如為了維修。 c疋，一第一移送室和一第二移送室的配置分別容許基材 繞過該回程路徑和該向前路徑上的製程腔室，因為該第一 及該第二移送室係經配置以將基材從該塗佈系統的向前路 徑移至該回程路徑，反之亦然。 較佳地，該第一移送室係與該第一製程腔室和該第二 〇 製程腔室連接，該第一製程腔室和該第二製程腔室係與該 第移送至連接，而該第三製程腔室和該第四製程腔室係 與該第二移送室連接。 該第一移送室可包含一第一可旋轉模組，其具有至少 一基材固持件以固持基材。該第一可旋轉模組係經配置以 相對於該第一製程腔室、該第二製程腔室、該載入鎖定室 及/或該栽出鎖定室對準該基材固持件，以從其接收基 材或傳送已接收至該移送室内的基材進入各別腔室。 & 該第二移送室可包含一第二可旋轉模組，其具有至少 一基材固持件以固持基材。該第二可旋轉模組係經配置以 相對於該第一製程腔室、該第二製程腔室、該第三製程腔 室及/或該第四製程腔室對準該基材固持件，以從其接收 基材’或傳送已接收至該移送室内的基材進入各別腔室。 特別地，該第一及/或第二可旋轉模組具有至少一第 一基材固持件和一第二基材固持件，以固持一第一基材及 /或一第二基材。該第一基材固持件和該第二基材固持件 係經配置使得當該第一基材固持件被對準以從一特定腔室 200951239 接收一第-基材或傳送-基材至—特^腔室時，該第二基 材固持件被對準以從另-個腔室接收1二基材或傳送一 第二基材至另—個腔室。該（等）可旋轉模組，當旋轉該基 材載座時’改變該基材相對於該傳送路徑的對準。該對準 的變化角度對應於該可旋轉模組的旋轉角度。明確地說， 該模組旋轉18G。’以㈣歸從—第—傳送純移送至一 第一傳送路徑。 ❹ m 根據本發明在一塗佈系統内，如上所述般，塗佈-基 材的方法包含如下步驟： a) 利用-載入鎖定室將一基材鎖定在該塗佈系統内； b) 傳送該基材進入一第一移送室； c) 傳送該基材進人一第—或―第二製程腔室，以利用 一第一製程處理該基材； d) 傳送該基材進入一第二移送室；以及 一 e)傳送該基材以—第三或—第四製程腔室，以利用 一第二製程處理該基材。 較佳地’該方法更包含如下步驟： )將該基材從該第二製程腔室或該第四製程腔室傳送 進入該第二移送室；以及 g)傳送該基材進入該第一製程腔室或該第二製程腔 室以利用一第三製程處理該基材。該第三製程可與該第 一製程相同或不同。 步驟g)可包含傳送該基材進入與步驟c)一樣的製程腔 室以利用一第三製程處理該基材。此製程在該第一或該 12 200951239 第一製程腔室無運轉時應用，例如為了維修。 該方法可更包含如下步驟·· h)傳送該基材進入該第一 移送至，以及〇傳送該基材進入一載出鎖定室。 較佳地提供該方法以生產一 TFT薄膜電晶體。 上述方法由於處理一第二及更多基材而不斷重複。該 等基材相繼通過該等製程站。在該塗佈系統之叢集配置 中，可同時處理兩個或多個基材（取決於一特定製程的塗佈 腔至數量）’即暫時重疊。在該塗佈系統的配置之連續部分 中’該等基材係在每一個製程腔室内依序處理。 藉由本發明，可實現一高產量的塗佈系統，同時實質 上避免整個系統停機。 主張上述特徵結構本身之任何組合。 【實施方式】 如第1圖所示’根據本發明之塗佈系統1包含一載入 鎖定/載出鎖定站’其含有一載入鎖定室3和一載出鎖定 © 室4。一基材馈送及接收部分2包含一旋轉模組（大氣壓力） 及一大氣旋轉模組，以饋送基材進入該系統1及/或接收 在該系統1内處理過的基材。此外，該塗佈系統i包含— 第一移送室5,其與該載入鎖定室3和該載出鎖定室4連 在該移送室5内，配置有一第一可旋轉移送模組6。 該可旋轉移送模組6具有兩個基材固持件7a、7b，其係配 置在一可旋轉平台上。該等基材固持件7a、7b可繞一中央 13 200951239 軸旋轉，而使基材固持件7a和7b可分別對準該 至3和該載出鎖定室4設置。 鎖定 e 該塗佈站1更包含一第一製程腔室8及—第二製韁 室9。兩者皆經配備以在基材上沈積一第_金屬層，^ -鉬金制。該第一製程腔室8和該第二製程腔室9係盎 該第-移送室5連接。該可旋轉移送模組6能旋轉，以使 $第一基材固持件7&與該載入鎖定室3以及該第一製程腔 至8對準，並且該第二基材固持件几與該载出鎖定室*以 及該第二製程腔室9對準，反之亦然。 此外，該塗佈系統i包含一第二移送室1〇，其具有一 第二可旋轉移送模組U，包含一第三基材固持件和一 第四基材固持件12b »該第二移送室1〇的配置與該第一移 送室5相似或相同。 該第二移送室係與該第一製程腔室8和該第二製程腔 室9以及一第三製程腔室13和一第四製程腔室μ連接。 ©該第三製程腔室13和該第四製程腔室，4係在該第二移送 室10處平行配置’即如同一叢集配置。該第三製程腔室 13和該第四製程腔室14係經配備以在該基材上沈積一第 二金屬層’例如-銘金屬層。該可旋轉移送模組u能旋 轉，以使該第三基材固持件12a與該第一製程腔室8以及 該第三製程腔室13對準，並且該第四基材固持件ub與該 第二製程腔室9以及該第四製程腔室14對準，反之亦然。 該載入鎖定室3、該第一基材固持件7&、和該第一製 程腔至8界定基材之生產線的連續向前路徑f。該第二製 200951239 程腔室9、該第二基材固持件7b和”出鎖定室4界定該 生產線的連續回程路徑Re該第二移送室1〇、該第三製程 腔室U和該第四製程腔室14界定一叢集工具，具有平行 的製程腔室13和14配置在該第二移送室1〇處。可能還有 與該第三及第四製程腔室相同或不同種類的其他塗佈腔 室。工作 The system can still work with reduced efficiency, but it ensures that the applicability of the coating system is almost uninterrupted. Preferably, the third process chamber and the fourth process chamber comprise a coating tool' to deposit a layer on the substrate using a second coating process. The second coating process can be a metallization process such as an aluminum metallization process. The second coating process can be a sputtering process. The first process chamber and the second process chamber are configured to provide a first coating process, and the second process chamber and the fourth process chamber are configured to provide a second coating process. For example, in a TFT coating system, the first process can be a first metallization process and the second process can be a second metallization process. One or two processes can be performed using a sputtering method. In particular, the load lock/load lock station includes a load lock chamber and a load lock chamber defining a beginning of a forward path of the substrate processed in the coating system; The exit lock chamber defines the end of the return path of the substrate. For example, the forward path is defined between the load lock chamber and the second transfer chamber, and the return path is defined between the second transfer 10 200951239 and the load lock to. The forward path or the return path may be interrupted when the chamber is not in operation, for example for maintenance. That is, the configuration of a first transfer chamber and a second transfer chamber respectively allows the substrate to bypass the return path and the process chamber on the forward path because the first and second transfer chambers are configured to The substrate is moved from the forward path of the coating system to the return path and vice versa. Preferably, the first transfer chamber is connected to the first process chamber and the second process chamber, and the first process chamber and the second process chamber are connected to the first transfer, and the The third process chamber and the fourth process chamber are coupled to the second transfer chamber. The first transfer chamber can include a first rotatable module having at least one substrate holder to hold the substrate. The first rotatable module is configured to align the substrate holder relative to the first process chamber, the second process chamber, the load lock chamber, and/or the plant lock chamber to It receives the substrate or conveys the substrate that has been received into the transfer chamber into the respective chamber. & The second transfer chamber can include a second rotatable module having at least one substrate holder to hold the substrate. The second rotatable module is configured to align the substrate holder relative to the first process chamber, the second process chamber, the third process chamber, and/or the fourth process chamber, The respective chambers are received from the substrate from which they are received or transferred into the transfer chamber. In particular, the first and/or second rotatable module has at least a first substrate holder and a second substrate holder for holding a first substrate and/or a second substrate. The first substrate holder and the second substrate holder are configured such that when the first substrate holder is aligned to receive a first substrate or a transfer substrate from a particular chamber 200951239 to - In the case of the chamber, the second substrate holder is aligned to receive the two substrates from the other chamber or to transfer a second substrate to the other chamber. The (equal) rotatable module ' changes the alignment of the substrate relative to the transport path when the substrate carrier is rotated. The angle of change of the alignment corresponds to the angle of rotation of the rotatable module. Specifically, the module is rotated 18G. The transfer is purely transferred to a first transmission path by (4) return-to-transmission. ❹ m In accordance with the present invention, in a coating system, as described above, the method of coating a substrate comprises the steps of: a) locking a substrate within the coating system using a load-locking chamber; b) Transferting the substrate into a first transfer chamber; c) transferring the substrate into a first or second process chamber to process the substrate using a first process; d) transferring the substrate into a first a transfer chamber; and a) transferring the substrate to a third or fourth process chamber to process the substrate using a second process. Preferably, the method further comprises the steps of: transferring the substrate from the second process chamber or the fourth process chamber into the second transfer chamber; and g) transferring the substrate into the first process The chamber or the second processing chamber processes the substrate using a third process. The third process can be the same or different than the first process. Step g) may comprise transferring the substrate into a process chamber as in step c) to treat the substrate using a third process. This process is applied when the first or the 12 200951239 first process chamber is not operating, for example, for maintenance. The method may further comprise the steps of: h) transferring the substrate into the first transfer to, and transferring the substrate into a carry-out lock chamber. The method is preferably provided to produce a TFT thin film transistor. The above method is repeated as a result of processing a second and more substrates. The substrates are successively passed through the process stations. In a cluster configuration of the coating system, two or more substrates (depending on the coating chamber to the number of a particular process) can be processed simultaneously, i.e., temporarily overlapping. In the continuous portion of the configuration of the coating system, the substrates are processed sequentially in each of the processing chambers. With the present invention, a high throughput coating system can be achieved while substantially avoiding system downtime. Any combination of the above described characteristic structures is claimed. [Embodiment] As shown in Fig. 1, the coating system 1 according to the present invention comprises a load lock/load lock station </ RTI> which includes a load lock chamber 3 and a load lock shutter chamber 4. A substrate feeding and receiving portion 2 includes a rotating module (atmospheric pressure) and an atmospheric rotating module for feeding the substrate into the system 1 and/or receiving the substrate processed in the system 1. Further, the coating system i includes a first transfer chamber 5 connected to the load lock chamber 3 and the load lock chamber 4 in the transfer chamber 5, and a first rotatable transfer module 6 is disposed. The rotatable transfer module 6 has two substrate holders 7a, 7b that are disposed on a rotatable platform. The substrate holders 7a, 7b are rotatable about a central 13 200951239 axis, so that the substrate holders 7a and 7b can be aligned with the to 3 and the load lock chamber 4, respectively. Locking e The coating station 1 further comprises a first processing chamber 8 and a second chamber 9. Both are equipped to deposit a first metal layer on the substrate, ^ - molybdenum gold. The first process chamber 8 and the second process chamber 9 are connected to the first transfer chamber 5. The rotatable transfer module 6 is rotatable to align the first substrate holder 7& with the load lock chamber 3 and the first process chamber to 8, and the second substrate holder is The loading lock chamber* and the second process chamber 9 are aligned, and vice versa. In addition, the coating system i includes a second transfer chamber 1A having a second rotatable transfer module U including a third substrate holder and a fourth substrate holder 12b. The configuration of the chamber 1 is similar or identical to the first transfer chamber 5. The second transfer chamber is coupled to the first process chamber 8 and the second process chamber 9 and a third process chamber 13 and a fourth process chamber μ. © the third process chamber 13 and the fourth process chamber, 4 are arranged in parallel at the second transfer chamber 10, i.e., in the same cluster configuration. The third process chamber 13 and the fourth process chamber 14 are configured to deposit a second metal layer, such as a metal layer, on the substrate. The rotatable transfer module u can be rotated to align the third substrate holder 12a with the first process chamber 8 and the third process chamber 13, and the fourth substrate holder ub and the The second process chamber 9 and the fourth process chamber 14 are aligned, and vice versa. The load lock chamber 3, the first substrate holder 7&, and the first process chamber to 8 define a continuous forward path f of the substrate. The second system 200951239 chamber 9, the second substrate holder 7b and the "out lock chamber 4 define a continuous return path of the line Re. The second transfer chamber 1", the third processing chamber U and the first The four-process chamber 14 defines a cluster tool with parallel process chambers 13 and 14 disposed at the second transfer chamber 1 。. There may be other coatings of the same or different types as the third and fourth processing chambers. Cloth chamber.
在一常規塗佈製程中，即當該第一、該第二、該第三 和該第四製程腔室8、9、13、14運轉時’―第—基材被鎖 定在該系統内，經由該栽入鎖定室3進入該第一移送室5。 進入該第一移送室5的第一基材係在該第一基材固持件7a 上傳送進入該第一製程腔室，以利用一濺射製程取得—第 一金屬化層，例如一鉬層。之後，將該第一基材傳送進入 該第二移送室10。接著將該第一基材傳送進入該第三製程 腔室13或該第四製程腔室14，以利用一第二濺射製程接 收一第二金屬化層，例如一鋁層。因為該第二層比該第一 層厚，在該第三製程腔室13或該第四製程腔室14内提供 該第二層的循環時間比在該第一製程腔室8或談第二製程 腔室9内提供一個層的循環時間要長很多。 與此同時，一第二基材可能已經由該載入鎖定室3、 該第一移送室5和該第一製程腔室8進入該第二移送室 ίο。該第二基材係經傳送進入該第三製程腔室13或該第四 製程腔室14,端看製程腔室13或14的哪一者未被該第一 基材佔據。之後，該第一基材被移送回該第二移送室10和 該第二製程腔室9内，以在一第一濺射製程中取得一第三 15 200951239 金屬化層，例如一錮層。 與此同時，一第三基材可能已進入該第二移送室^〇, 並被移送進入該第三製程腔室13或該第四製程腔室Μ， 端看製程腔室13、14的哪一者未被該第二基材佔據。當該 第一基材被傳送通過該第一移送室5和該載出鎖定室4 時’該第二基材被傳送進入該第二製程腔室9，以取得一 第三金屬化層。更多基材可接在該第三基材之後通過該塗 佈系統1，以在其上沈積一 TFT層堆疊。 ® 在此常規操作模式中’該等基材並未在該向前路徑？ 和該回程路徑R之間移送。該第一移送室5作用為一移送 至’用以將該等基材從該載入鎖定室3直接移送至該第一 塗佈腔室8’並且介於該第二塗佈腔室9和該載出鎖定室4 之間。該旋轉模組6係保持在一預定位置。 在該圖式指出的另一種情況中，該第二製程腔室9因 為維修而無運轉’例如為了更換濺射靶材。此時，該第一 φ 製程腔室8作用為一製程腔室，以在該塗佈系統〗内處理 的每一個基材上沈積該第一金屬化層和該第三金屬化層。 明確地說’一第一基材經由該載入鎖定室3進入該塗 佈系統1 ’並且沿著該第一基材固持件7a傳送通過該第一 移送室5進入該第一製程腔室8’以利用一第一濺射製程 取得一第一金屬化層’例如鉬層。之後，該第一基材被傳 送進入該第二移送室1〇，並進入該第三製程腔室13或該 第四製程腔室14,以利用一第二濺射製程取得一第二金屬 化層’例如一鋁層。之後，該第一基材被傳送回該第二移 200951239 送至10内，同時一第二基材從該第一製程腔室8進入該第 一移送室10内。之後’當該第二基材被傳送進入該第三或 該第四製程腔室13或14内時，該第一基材與該第一製程 腔室8對準，並被傳送回到該第一製程腔室8内，以取得 第二金屬化層。之後，該第一基材進入該第一移送室5。 旋轉該可旋轉移送模組6，以使該第一基材與該載出鎖定 室4對準。在該可旋轉移送模組6之此位置上，另一個基 ❹ 材可經由該載入鎖定室3進入該第一移送室5。之後，該 第三基材在該第一製程腔室8内處理。 此程序隨著新的基材進入該塗佈系統i並取代離開該 塗佈系統1的另一個基材而不斷重複。當然，若該第一或 該第一塗佈腔室8或9(以及該第三或第四塗佈腔室13或 14)停機，處理一預定數量的基材之循環時間會增加。但 是，並不需要停止整個塗佈系統丨的運轉，因此確保該系 统的可運用性。在傳送通過該塗佈系統i期間，該等基材 ® 、常係以實質上垂直的姿態對準。在該等腔室之間安袭間 閥以真空密封該等腔室。 甲 *該第二操作模式中’例如’當該第二腔室9無運轉 ::從該第三或第四塗佈腔室13或14返回的基材繞過該 〜塗佈腔室9。該第-移送室5和該第二移送室1〇使該 #可離開該回程路徑R並在該向前路徑繞過該 製程腔室9 » 一 第2圖不出根據本發明之塗佈系統的不同操作模式。 在一第-操作模式&中，所有該第一、該第二、該第 17 200951239 三和該第四製程腔室8、9、 和14皆運轉。因此，可執 行如上所述的常規塗佈製程。 ^ 、 在此操作模式中，在該系統 中的腔室8(鉬）、13或Μ(鋁· ^ , 、铝，交替地）、及9(鉬）内依序處 理基材。即第一個、第三個、楚 第五個等等基材係在該第三 腔室内處理，而第二個、第徊 弟四個、第六個等等基材係在該 第四腔室14内處理。該循環時間,此增加。 在-第二操作模式b中’該循環時間增加，其具有相 Φ 同的銷和銘層沈積速率’但是該第四製程腔室Μ無運轉。 因此，瓶頸是分別在該篦 隹涿第—和該第四製程腔室13和14内 執行的銘塗佈製程。 在一第三操作模式〇中，該第二製程腔室9無運轉》 因為所有基材的錮層只能在該第一製程腔室8内沈積，該 循環時間會增加。此操作模式的瓶頸是基材在該等移送室 内的移送和旋轉，即基材的處理。 在一第四操作模式d中，該第—製程腔室8和該第四 ❹製程腔室14無運轉，該循環時間因為在該等移送室5和 10内的處理以及在該第三製程腔室13内的銘塗佈之瓶頸 而增加。 大體而言，本發明利用兩個平行塗佈腔室介於兩個移 送室間的夾層配置提供增加該系統可運用性之可能性，其 中之一屬於一向前路徑F’另一者則屬於一回程路徑R，該 等移送至係配置來將基材從該向前路徑F移送至該回程路 徑R ’反之亦然。 【圖式簡單說明】 18 200951239 本發明之更多特徵結構和優點可經由上面較佳實施例 的描述並參考附圖而變得顯而易見。該等圖式示出： 第1圖，其根據本發明之一塗佈系統的概要圖；以及 第2圖，其根據本發明之塗佈系統的不同操作模式。 【主要元件符號說明】 1 塗佈系統 2 基材饋送及接收部分 3 ❹ 4 5 6 載入鎖定室 載出鎖定室 第一移送室 第一可旋轉移送模組 7a -8 * 7b 基材固持件 第一製程腔室 9 第二製程腔室 10 第二移送室 ❿ 11 第二可旋轉移送模組 12a 第三基材固持件 12b 第四基材固持件 13 第三製程腔室 14 第四製程腔室 19In a conventional coating process, that is, when the first, second, third, and fourth process chambers 8, 9, 13, 14 are in operation, the "--substrate is locked in the system, The first transfer chamber 5 is entered via the planting lock chamber 3. The first substrate entering the first transfer chamber 5 is transferred onto the first substrate holding member 7a into the first process chamber to obtain a first metallization layer, such as a molybdenum layer, by a sputtering process. . Thereafter, the first substrate is transferred into the second transfer chamber 10. The first substrate is then transferred into the third process chamber 13 or the fourth process chamber 14 to receive a second metallization layer, such as an aluminum layer, using a second sputtering process. Because the second layer is thicker than the first layer, the cycle time of providing the second layer in the third process chamber 13 or the fourth process chamber 14 is greater than that in the first process chamber 8 The cycle time for providing a layer in the process chamber 9 is much longer. At the same time, a second substrate may have entered the second transfer chamber ί by the load lock chamber 3, the first transfer chamber 5, and the first process chamber 8. The second substrate is conveyed into the third process chamber 13 or the fourth process chamber 14 to see which of the process chambers 13 or 14 is not occupied by the first substrate. Thereafter, the first substrate is transferred back into the second transfer chamber 10 and the second process chamber 9 to obtain a third 15 200951239 metallization layer, such as a germanium layer, in a first sputtering process. At the same time, a third substrate may have entered the second transfer chamber and is transferred into the third process chamber 13 or the fourth process chamber, where the process chambers 13, 14 are viewed. One is not occupied by the second substrate. When the first substrate is transported through the first transfer chamber 5 and the carry-out lock chamber 4, the second substrate is transferred into the second process chamber 9 to obtain a third metallization layer. More substrate can be passed through the coating system 1 after the third substrate to deposit a stack of TFT layers thereon. ® In this normal operating mode 'The substrates are not in the forward path? Transferred between the return path R and the return path. The first transfer chamber 5 functions as a transfer to 'for transferring the substrates directly from the load lock chamber 3 to the first coating chamber 8' and between the second coating chamber 9 and This is carried out between the lock chambers 4. The rotary module 6 is held in a predetermined position. In the other case indicated in the figure, the second process chamber 9 is not operational due to maintenance, e.g., in order to replace the sputtering target. At this time, the first φ process chamber 8 functions as a process chamber for depositing the first metallization layer and the third metallization layer on each of the substrates processed in the coating system. Specifically, a first substrate enters the coating system 1 ' via the load lock chamber 3 and passes through the first substrate holding member 7a through the first transfer chamber 5 to enter the first process chamber 8 'To obtain a first metallization layer, such as a molybdenum layer, using a first sputtering process. Thereafter, the first substrate is transferred into the second transfer chamber 1 and enters the third process chamber 13 or the fourth process chamber 14 to obtain a second metallization by a second sputtering process. The layer 'is for example an aluminum layer. Thereafter, the first substrate is transferred back to the second movement 200951239 and sent to 10 while a second substrate enters the first transfer chamber 10 from the first processing chamber 8. Thereafter, when the second substrate is transferred into the third or fourth process chamber 13 or 14, the first substrate is aligned with the first process chamber 8 and is transferred back to the first A process chamber 8 is provided to obtain a second metallization layer. Thereafter, the first substrate enters the first transfer chamber 5. The rotatable transfer module 6 is rotated to align the first substrate with the carry-out lock chamber 4. In this position of the rotatable transfer module 6, another base material can enter the first transfer chamber 5 via the load lock chamber 3. Thereafter, the third substrate is processed in the first process chamber 8. This procedure is repeated as new substrates enter the coating system i and replace the other substrate leaving the coating system 1. Of course, if the first or first coating chamber 8 or 9 (and the third or fourth coating chamber 13 or 14) is shut down, the cycle time for processing a predetermined number of substrates may increase. However, it is not necessary to stop the operation of the entire coating system, thus ensuring the availability of the system. During transport through the coating system i, the substrates ® are often aligned in a substantially vertical orientation. A valve is placed between the chambers to vacuum seal the chambers. A * In the second mode of operation, for example, when the second chamber 9 is not in operation, the substrate returned from the third or fourth coating chamber 13 or 14 bypasses the coating chamber 9. The first transfer chamber 5 and the second transfer chamber 1 enable the # to leave the return path R and bypass the process chamber 9 in the forward path. A second drawing shows the coating system according to the present invention. Different modes of operation. In a first-operation mode & all, the first, the second, the 17th 200951239, and the fourth process chambers 8, 9, and 14 are all in operation. Therefore, the conventional coating process as described above can be performed. ^ In this mode of operation, the substrate is processed sequentially in chambers 8 (molybdenum), 13 or tantalum (aluminum, ^, aluminum, alternately), and 9 (molybdenum) in the system. That is, the first, third, and fifth fifth substrates are processed in the third chamber, and the second, fourth, fourth, and the like substrates are in the fourth chamber. Processing in chamber 14. This cycle time, this increases. In the second mode of operation b, the cycle time is increased, which has the same pin and ingot deposition rate 'but the fourth process chamber is not operating. Therefore, the bottleneck is the inscription coating process performed in the first and the fourth process chambers 13 and 14, respectively. In a third mode of operation, the second process chamber 9 is inoperative" because the ruthenium layer of all substrates can only be deposited in the first process chamber 8, the cycle time is increased. The bottleneck of this mode of operation is the transfer and rotation of the substrate within the transfer chambers, i.e., the processing of the substrate. In a fourth mode of operation d, the first process chamber 8 and the fourth process chamber 14 are inoperative, the cycle time is due to processing in the transfer chambers 5 and 10 and in the third process chamber The bottleneck of the coating in the chamber 13 is increased. In general, the present invention utilizes a sandwich configuration in which two parallel coating chambers are interposed between two transfer chambers to provide the possibility of increasing the operability of the system, one of which belongs to a forward path F' and the other belongs to a The return path R, which is transferred to the system configuration to transfer the substrate from the forward path F to the return path R' and vice versa. BRIEF DESCRIPTION OF THE DRAWINGS [0009] Further features and advantages of the present invention will become apparent from the description of the preferred embodiments described herein. The drawings show: Figure 1 which is a schematic view of a coating system according to the invention; and Figure 2, which shows different modes of operation of the coating system according to the invention. [Main component symbol description] 1 Coating system 2 Substrate feeding and receiving part 3 ❹ 4 5 6 Loading lock chamber Carrying lock chamber First transfer chamber First rotatable transfer module 7a -8 * 7b Substrate holder First process chamber 9 second process chamber 10 second transfer chamber ❿ 11 second rotatable transfer module 12a third substrate holder 12b fourth substrate holder 13 third process chamber 14 fourth process chamber Room 19