CN102057076B - Coating system and method for coating a substrate - Google Patents

Abstract

A coating system 1 comprises a lock-in chamber 3 and a lock-out chamber 4. Furthermore, the coating system comprises a first transfer chamber 5 connected with the lock-in chamber 3 and the lock-out chamber 4. In the transfer chamber 5 a first rotatable transfer module 6 is arranged. The substrate holders 7a, 7b may be rotated around a central axis such that substrate holders 7a and 7b may be positioned in alignment with the lock-in chamber 3 and the lock-out chamber 4, respectively. The coating station 1 further includes a first process chamber 8 and a second process chamber 9. Furthermore, the coating system 1 includes a second transfer chamber 10 having a second rotatable transfer module 11 including a third substrate holder 12a and a fourth substrate holder 12b. The second transfer chamber is connected with the first process chamber 8 and the second process chamber 9 as well as a third process chamber 13 and a fourth process chamber 14. The third process chamber 13 and the fourth process chamber 14 are arranged parallel, i.e. like a cluster arrangement, at the second transfer chamber 10. The invention provides for a possibility to increase the availability of the system by a sandwich arrangement of two parallel coating chambers 8 and 9 arranged on a forward path F and a return path R, respectively, between two transfer chambers 5 and 10 which are configured to transfer the substrate from the forward path F to the return path R and vice versa.

Description

Coating system and method for coating a substrate

technical field

The invention relates to a coating system for processing a substrate, comprising: a chamber layout comprising a first processing chamber and a second processing chamber; wherein the first processing chamber is arranged in the coating On the forward path of the series part of the system and the second process chamber is arranged on the return path of the series part of the coating system. Furthermore, the invention also relates to a method for coating a substrate, especially in a coating system as described above.

Background technique

In many technical applications, multiple layer stacks are deposited onto a substrate in a series of coating steps. For example, in TFT (Thin Film Transistor) metallization, two or three different metals are deposited by a sputtering process. Due to the different coating rates in the different process steps and the different thicknesses of the layers, the process time taken to deposit the different layers on the coating station varies widely.

Many configurations of coating and processing chambers have been proposed for depositing multiple layer stacks. For example, coating chambers arranged in series are used, and coating chambers arranged in clusters are also used. A typical cluster layout includes a central management room and many coating booths connected to the central management room. Coating chambers can be equipped to perform the same or different coating processes. However, although the management of the processing is very easy in a series system, the processing time is determined by the longest processing time. Therefore, the efficiency of processing is affected. Cluster tools, on the other hand, allow for different cycle times. However, management can be very complex requiring an elaborate transmission system at a central management office.

An alternative concept combining series and cluster concepts has been described in document EP 1 801 843 A1, the content of which is hereby incorporated by reference. The document describes a coating system for depositing TFT layer stacks with: a lock-in chamber, a metallization station for the first metallization process, a central management chamber for the second Two metallization stations for the second metallization process, and a second metallization station for the first process. The metallization chambers for the second process are arranged in parallel with each other and used alternately. The process chambers for the first metallization process are arranged in series so that each substrate is processed in both chambers. The cycle time of the system is reduced by the combination of series concept and cluster concept because combination reduces processing complexity while increasing throughput.

Document US 2007/020903 A2 discloses a method for making a film stack and a processing system for forming a film stack on a substrate.

However, in the event that a particular coating chamber has to undergo a maintenance treatment or a cleaning treatment (for example when changing a sputtering target), the operation of the coating system must be completely stopped.

Contents of the invention

Purpose of the invention

The purpose of the present invention is to increase the overall throughput and efficiency of coating systems, especially for TFT metal applications.

Technical solutions

This object is solved by providing a coating system according to claim 1 , and a method for coating a substrate according to claim 11 . The dependent claims are directed to preferred features of the invention.

A coating system according to the present invention is used for processing a substrate and comprises: a chamber layout comprising a first processing chamber and a second processing chamber; wherein the first processing chamber is arranged in the on the forward path of the serial part of the coating system, and the second process chamber is arranged on the return path of the serial part of the coating system. Both the first processing chamber and the second processing chamber are arranged between a first transfer chamber and a second transfer chamber configured to transfer a substrate From the forward path of the first serial section to the return path of the second serial section and vice versa.

In normal operating mode, i.e., if both the first process chamber and the second process chamber are in operation, the forward path is defined as the movement path of the substrate from the incoming chamber to the second transfer chamber and the return path is defined as The movement path of the substrate from the second transfer chamber to the outgoing chamber. For transport along the transport path, the substrate may be supported by a substrate carrier. A substrate can be attached to the substrate holder. In another embodiment, the substrate can be passed through the coating system without a carrier (eg, using an air cushion transport system).

The first processing chamber and the second processing chamber are arranged in parallel and arranged in series with the in/out station and the first transfer chamber. The first transfer chamber is arranged between the in/out table and the first and second processing chambers, and is configured to transfer substrates received from the in/out table to the first processing chamber and the second processing chamber, respectively. Second processing room. Additionally, the coating system includes a second transfer chamber arranged in series with the first and second processing chambers and configured to transfer a substrate received from the first processing chamber or the second processing chamber to another one room.

The processing chamber may be any processing station, in particular a coating station for depositing a layer or layer stack on a first substrate. In the TFT coating process, two, three or more metal layers are deposited on the substrate. The first process chamber and the second process chamber may be, for example, metal-coated stations for providing a Mo layer by a first sputtering process. The third and fourth process chambers may be, for example, metallized stations for providing an Al layer on the first substrate by a second sputtering process. Further substrates, such as second, third, fourth, etc., may enter the coating system and be processed in the coating system sequentially and simultaneously with the first substrate. That is, different processing and transmission steps may overlap.

The coating system is characterized by a specific layout of the management and processing stations. Both transfer chambers can receive substrates from respective processing chambers and can feed substrates into both the first and second processing chambers. Thus, in the event that one of the first or second process chambers is shut down for preparation, maintenance, cleaning, etc., the other of the first and second process chambers can still be active and process substrates passing through the process chambers . Of course, when one of the first or second process chambers is closed, the cycle time increases because each substrate passes through either the first process chamber or the second process chamber in both directions. There is thus a bottleneck in the series path due to the missing first or second process chamber. When the forward and return paths share a specific process chamber, the throughput and efficiency of the overall coating system is reduced. However, a situation in which the work of the overall coating system has to be stopped can be avoided, thus improving the availability of the coating system.

Compared to the concept described in document EP 1 801 843 A1, an additional transfer chamber is introduced which allows the substrates on the serial path to be wound around using a corresponding coating station arranged in parallel with a specific coating station. through a specific coating bench. This inventive concept can be applied to every coating system in which the process chambers in the forward path of the tandem system (or combined tandem-cluster system) are arranged in parallel with the tandem system (or combined tandem - parallel connection of the corresponding processing chambers in the return path of the cluster system, both of which are arranged between the first transfer chamber and the second transfer chamber, allowing substrates to be transferred on the forward path (or return path) One of the two process chambers is bypassed by changing from the forward path to the return path or vice versa. This concept is especially applicable when the same treatment is carried out in two treatment chambers on the way to the third and fourth treatment chamber respectively, and on the way back from the third and fourth treatment chamber respectively.

Preferably, the chamber layout comprises in/out stations for transferring substrates into and/or out of said coating system, respectively. The first processing chamber and the second processing chamber are arranged in series with the in/out station, the first transfer chamber and the second transfer chamber.

In particular, the first process chamber and the second process chamber comprise coating tools for depositing a layer on a substrate by a first coating process. The first coating treatment may be a metallization treatment, such as a Mo metallization treatment. The coating process may be a sputtering process.

In a preferred embodiment of the invention, the chamber layout comprises at least a third process chamber for processing the substrate, wherein the third process chamber is connected to the second process chamber.

In particular, the chamber layout comprises a fourth processing chamber arranged in parallel with said third processing chamber connected to said second transfer chamber. The fourth processing chamber may be arranged in parallel with the third processing chamber, and the second transfer chamber is configured to transfer substrates received from the first processing chamber and the second processing chamber to the third processing chamber and the fourth processing chamber, respectively. one of. The same coating layer may be deposited in the third and fourth process chambers, for example, the third and fourth process chambers may be coating stations for depositing an Al layer on the substrate by sputtering. Due to the fact that in a TFT system the thickness of the Al layer is much greater than the thickness of the underlying and overlying Mo layers, the third and fourth processing chambers work as cluster tools, e.g. Two transfer chambers are loaded.

In fact, the first transfer chamber is arranged for transferring the substrate between at least two of the first and the second process chamber and/or the transfer/transfer chamber. A second transfer chamber is provided for transferring substrates between at least two of the first, second, third and/or fourth processing chambers. The first and/or second transfer chamber may be a vacuum transfer chamber.

In conventional processing, a first substrate is transported from an incoming chamber along an advancing path, through a first transport chamber along a first substrate holder, into a first processing chamber to obtain a first coating therein. The first substrate is then transferred to the second transfer chamber and into either of the third processing chamber and the fourth processing chamber to obtain a second coating therein. Thereafter, the first substrate is transported back on the return path through the second transport chamber into the second process chamber to obtain a third coating therein. The first substrate is then conveyed through the first transfer chamber into the transfer chamber to remove the coated substrate from the coating system.

Alternatively, eg in case the first coating chamber is not in operation, the substrate being transported on the forward path may instead be transported to the second process chamber to obtain the first coating. Alternatively, a substrate being transported on the return path may be transported to the first process chamber instead of the second coating chamber on its way back to the first transport chamber, for example if the second coating chamber is not in operation to obtain a third coat.

The combined series-cluster system provides high efficiency whenever the first process chamber and the second process chamber are in operation. If one or more of the process chambers is unavailable, the system can still operate at a reduced efficiency, but the availability of the coating system can be guaranteed almost continuously.

Preferably, the third process chamber and the fourth process chamber comprise coating means for depositing a layer on the substrate using the second coating process. The second coating process may be a metallization process, such as Al metallization process. The second metallization process may be a sputtering process.

The first and second processing chambers are configured to provide a first coating process, and the third and fourth processing chambers are configured to provide a second coating process. For example, in a TFT coating system, the first process may be a first metallization process and the second process may be a second metallization process. Either or both of these treatments can be performed using sputtering methods.

Specifically, the incoming/outgoing workbench includes incoming chambers and outgoing chambers. The incoming chamber defines the beginning of the forward path of the substrate being processed in the coating system and the outgoing chamber defines the end of the returning path of the substrate. For example, a forward path is defined between the incoming chamber and the second transfer chamber, and a return path is defined between the second transfer chamber and the outgoing chamber. The forward path or the return path may be interrupted in case a chamber arranged on the path is inactive for eg maintenance purposes or the like. However, the arrangement of the first and second transfer chambers allows the substrate to bypass the process chambers on the forward and return paths, respectively, because the first and second process chambers are configured to transport the substrate from the coating system The forward path transfers to the return path and vice versa.

Preferably, the first transfer chamber is connected with the first processing chamber and the second processing chamber, the first processing chamber and the second processing chamber are connected with the second transfer chamber, and the third processing chamber and the fourth processing chamber are connected with the second transfer chamber connect.

The first transfer chamber may comprise a first rotatable module having at least one substrate holder for holding a substrate. The first rotatable module is configured to align the substrate holder with respect to the first processing chamber, the second processing chamber, the incoming chamber, and/or the outgoing chamber to receive a substrate therefrom, or to receive a substrate in a transfer chamber. The substrates are delivered to the individual chambers.

The second transfer chamber may comprise a second rotatable module having at least one substrate holder for holding a substrate. The second rotatable module is configured to align the substrate holder with respect to the first processing chamber, the second processing chamber, the third processing chamber, and/or the fourth processing chamber to receive a substrate therefrom, or to transfer the The substrates received in the chambers are delivered to the respective chambers.

In particular, the first and/or second rotatable module has at least a first substrate holder and a second substrate holder for holding a first substrate and/or a second substrate. The first substrate holder and the second substrate holder are arranged such that when the first substrate holder is aligned to receive a first substrate from or deliver a substrate to a particular chamber, the second substrate holder The substrate holder is aligned to receive a second substrate from or deliver a second substrate to the other chamber. The rotatable module(s) (when rotating the substrate carrier) change the alignment of the substrate relative to the transport path. The angle of change in alignment corresponds to the angle of rotation of the rotatable module. Specifically, in order to transfer the substrate from the first transfer path to the second transfer path, the module is turned by 180°.

The method according to the invention for coating a substrate in a coating system as described above comprises the following steps:

a) introducing a substrate into the coating system via an introduction chamber;

b) transferring the substrate into a first transfer chamber;

c) transferring the substrate into one of a first processing chamber and a second processing chamber to process the substrate with a first process;

d) transferring the substrate into a second transfer chamber; and

The substrate is transferred into one of the third processing chamber and the fourth processing chamber to process the substrate with a second process. Preferably the method also includes the steps of:

f) transferring the substrate from the third processing chamber or the fourth processing chamber to the second transfer chamber; and

g) transferring the substrate into the first processing chamber or the second processing chamber to process the substrate with a third process. The third treatment may be the same as or different from the first treatment.

Step g) may include the step of transferring the substrate into the same processing chamber as in step c) to process the substrate with a third process. This step may be applied when one of the first or second process chambers is not in operation due to maintenance purposes or the like.

The method also includes the steps of: h) transferring the substrate into the first transfer chamber; and i) transferring the substrate into a transfer chamber.

Preferably the method is used to produce TFT thin film transistors.

The method described above is successively repeated by processing the second substrate and further substrates. The substrates pass sequentially through the processing station. In a cluster configuration of coating systems, two or more substrates (depending on the number of coating chambers used for a particular process) can be processed simultaneously, ie overlapping in time. In the tandem part(s) of the configuration of the coating system, the substrates are processed successively in the processing chambers.

By means of the present invention, a high throughput of the coating system can be achieved while substantially avoiding overall system downtime.

The right is claimed to essentially any combination of the above-mentioned features.

Description of drawings

Further features and advantages of the present invention will be self-evident from the following description of preferred embodiments with reference to the accompanying drawings. Explanation of drawings

Figure 1 is a schematic representation of a coating system according to the present invention; and

Figure 2 shows different modes of operation of the coating system according to the invention.

Detailed ways

As shown in Figure 1, a coating system 1 according to the present invention includes an incoming/outgoing (lock-in/lock-out) workbench comprising an incoming chamber 3 and an outgoing chamber 3. Room 4. The substrate feeding and receiving part 2 includes a swing module (pneumatic pressure) and a pneumatic rotation module for feeding substrates into the system 1 and/or receiving substrates processed in the system 1 . Furthermore, the coating system 1 comprises a first transfer chamber 5 connected to the inlet chamber 3 and the outlet chamber 4 .

In the transfer chamber 5 a first rotatable transfer module 6 is arranged. The rotatable module 6 has two substrate holders 7a, 7b arranged on a rotatable platform. The substrate holders 7a, 7b are rotatable about the central axis, so that the substrate holders 7a, 7b can be placed in alignment with the incoming chamber 3 and the outgoing chamber 4, respectively.

The coating station 1 also comprises a first process chamber 8 and a second process chamber 9, both of which are equipped for depositing a first metal layer, eg a Mo metallization layer, on a substrate. The first processing chamber 8 and the second processing chamber 9 are connected to the first transfer chamber 5 . The rotatable transfer module 6 can be turned so that the first substrate holder 7a is aligned with the incoming chamber 3 and the first processing chamber 8 and the second substrate holder 7b is aligned with the outgoing chamber 4 and the second processing chamber 9 into alignment, and vice versa.

Furthermore, the coating system 1 comprises a second transfer chamber 10 with a second rotatable transfer module 11 comprising a third substrate holder 12a and a fourth substrate holder 12b. The second transfer chamber 10 is configured similarly or identically to the first transfer chamber 5 .

The second transfer chamber is connected to the first processing chamber 8 and the second processing chamber 9 and the third processing chamber 13 and the fourth processing chamber 14 . The third processing chamber 13 and the fourth processing chamber 14 are arranged in parallel at the second transfer chamber 10 (ie like a cluster arrangement). The third process chamber 13 and the fourth process chamber 14 are equipped for depositing a second metal layer, for example an Al metallization layer, on the substrate. The rotatable transport module 11 can be rotated so that the third substrate holder 12a is aligned with the first processing chamber 8 and the third processing chamber 13, and the fourth substrate holder 12b is aligned with the second processing chamber 9 and the fourth processing chamber 9. The process chambers 14 are aligned, and vice versa.

The incoming chamber 3, the first substrate holder 7a and the first processing chamber 8 define a serial progression path F of the substrate production line. The second processing chamber 9, the second substrate holder 7b and the outgoing chamber 4 delimit the serial return path R of the production line. The second transfer chamber 10 , the third processing chamber 13 and the fourth processing chamber 14 delimit a cluster tool, wherein the parallel processing chamber 13 and the fourth processing chamber 14 are arranged at the second transfer chamber 10 . There may also be other coating chambers of the same kind or of a different kind than the third and fourth processing chambers.

In the conventional coating process, that is, when the first processing chamber 8, the second processing chamber 9, the third processing chamber 13 and the fourth processing chamber 14 are in working condition, the first substrate is introduced into via the transfer chamber 3 In the system to enter the first transfer chamber 5. The first substrate entering the first transfer chamber 5 is transferred via the first substrate holder 7a into the first processing chamber to obtain a first metallization layer, for example a Mo layer, by sputtering. Then, the first substrate is transferred into the second transfer chamber 10 . The first substrate is then transferred into the third processing chamber 13 or the fourth processing chamber 14 to obtain a second metallization layer, for example an Al layer, by a second sputtering treatment. Since the second layer is thicker than the first layer, the cycle time for producing the second layer in the third process chamber 13 or the fourth process chamber 14 is shorter than in the first process chamber 8 or the second process chamber 9 for producing Layer cycle times are significantly longer.

During this period, the second substrate can enter the second transfer chamber 10 via the introduction chamber 3 , the first transfer chamber 5 and the first processing chamber 8 . The second substrate is transferred to any one of the third processing chamber 13 and the fourth processing chamber 14 not occupied by the first substrate. The first substrate is then transported back to the second transfer chamber 10 as well as the second process chamber 9 to obtain a third metallization layer, for example a Mo layer, in a first sputtering process.

During this time, the third substrate may enter the second transfer chamber 10 and be transferred to any one of the third processing chamber 13 and the fourth processing chamber 14 not occupied by the second substrate. While the first substrate is transferred through the first transfer chamber 5 and the transfer chamber 4, the second substrate is transferred to the second processing chamber 9 to obtain the third metallization layer. Further substrates may follow the third substrate through the coating system to deposit the TFT layer stack thereon.

In this (conventional) mode of operation, the substrate is not transported between the forward path F and the return path R. The first transfer chamber 5 serves as a transfer chamber for transferring substrates directly from the incoming chamber 3 into the first processing chamber 8 and between the second processing chamber 9 and the outgoing chamber 4 . The rotating module 6 maintains a predetermined position.

In another situation indicated in the figure, the second process chamber 9 is in an inactive state due to maintenance, eg replacement of a sputtering target. When this happens, the first process chamber 8 serves as a process chamber for depositing a first metallization layer and a third metallization layer on each substrate being processed in the coating system 1 .

Specifically, the first substrate enters the coating system 1 via the introduction chamber 3, and is transferred into the first processing chamber 8 along the first substrate holder 7a through the first transfer chamber 5 to pass through the first substrate holder 7a. The sputtering treatment obtains a first metallization layer, for example a Mo layer. Then, the first substrate is transferred into the second transfer chamber 10 and into one of the third processing chamber 13 and the fourth processing chamber 14 to obtain a second metal layer by a second sputtering process, e.g. Al layer. Thereafter, the first substrate is transferred back to the second transfer chamber 10 while the second substrate enters from the first processing chamber 8 into the second transfer chamber 10 . Then, while the second substrate is transferred to the third processing chamber 13 or the fourth processing chamber 14, the first substrate is aligned with the first processing chamber 8 and transferred back to the first processing chamber 8 to obtain the third processing chamber 8. metallization layer. Then, the first substrate enters into the first transfer chamber 5 . The rotatable transfer module 6 is turned so that the first substrate is aligned with the transfer chamber 4 . With the rotatable transfer module 6 in position, another substrate can enter the first transfer chamber 5 via the feed-in chamber 3 . Afterwards, the third substrate is processed in the first processing chamber 8 .

This process is continuously repeated as a new substrate enters the coating system 1 and replaces another substrate leaving the coating system 1 . Of course, in the event of a downtime of the first process chamber 8 or the second process chamber 9 (also the third process chamber 13 or the fourth process chamber 14), the cycle time for processing a certain number of substrates will increase. However, there is no need to stop the operation of the overall coating system 1, thus ensuring the availability of the system. During transport through the coating system 1, the substrates are generally arranged in a substantially vertical posture. Gate valves are installed between the chambers for vacuum sealing of the chambers.

In the second working mode, for example, when the second processing chamber 9 is in a non-working state, the substrate returned from the third processing chamber 13 or the fourth processing chamber 14 bypasses the second processing chamber 9 . The first transfer chamber 5 and the second transfer chamber 10 enable the substrate to leave the return path R and on the forward path F bypass the second process chamber 9 .

Figure 2 illustrates the different modes of operation of the coating system according to the invention.

In the first working mode a), the first processing chamber 8 , the second processing chamber 9 , the third processing chamber 13 and the fourth processing chamber 14 are all in working state. Therefore, the conventional coating process described above can be performed. In this mode of operation, substrates are processed sequentially in the system in chambers 8 (Mo), 13 or 14 (Al; alternatively), and 9 (Mo). That is, a first substrate, a third substrate, a fifth substrate, etc. are processed in the third chamber, and a second substrate, a fourth substrate, a sixth substrate, etc. are processed in the fourth processing chamber 14 . The cycle time will increase accordingly.

In the second operating mode b), the cycle time is increased by s for the same deposition rate of the Mo layer and the Al layer while the fourth process chamber 14 is inactive. Therefore, the bottleneck is the Al coating process in the third process chamber 13 and the fourth process chamber 14, respectively.

In the third working mode c), the second processing chamber 9 is in a non-working state. Since the Mo layer is only deposited in the first process chamber 8 for all substrates, the cycle time is increased. The bottleneck in this mode is the transfer and rotation of the substrates in the transfer chamber, ie, substrate management.

In the fourth working mode d), the first processing chamber 8 and the fourth processing chamber 14 are in a non-working state. The cycle time increases due to the following bottlenecks: management in transfer chamber 5 and transfer chamber 10 and Al coating in third process chamber 13 .

In summary, the invention provides a sandwich layout as follows to increase the availability of the system: two parallel coating chambers are arranged between two transfer chambers, one of the two parallel coating chambers belongs to the forward path F, the other belongs to the return path R, two transfer chambers are configured to transfer substrates from the forward path F to the return path R and vice versa.

Claims (15)

1. an application system (1) is used for substrate is processed, and comprises:

Chamber layout, described chamber layout comprise the first treatment chamber (8) and the second treatment chamber (9);

Wherein, described the first treatment chamber (8) is disposed on the series connection progress path (F) partly of described application system (1), and described the second treatment chamber (9) is disposed on the series connection return path (R) partly of described application system (1)

Described application system is characterised in that

Described the first treatment chamber (8) and described the second treatment chamber (9) both are disposed between the first transfer chamber (5) and the second transfer chamber (10), and described the first transfer chamber (5) and described the second transfer chamber (10) are configured to substrate is sent to the described return path (R) of described the second series connection part and vice versa from the described progress path (F) of described the first series connection part.

2. application system according to claim 1 (1),

It is characterized in that

Described chamber layout comprises for respectively substrate being imported into described application system (1) and/or substrate being spread out of imports/spreads out of worktable (2) into outside the described application system (1);

Wherein said the first treatment chamber (8) and described the second treatment chamber (9) are arranged to and described importing into/spread out of worktable (2), described the first transfer chamber (5) and described the second transfer chamber (10) to connect.

3. application system according to claim 1 and 2 (1),

It is characterized in that

Described the first treatment chamber (8) and described the second treatment chamber (9) comprise for the coated tool by the first coating processing settled layer on substrate.

4. application system according to claim 1 (1),

It is characterized in that

Described chamber layout comprises that at least wherein said the 3rd treatment chamber (13) is connected to the second treatment chamber (9) for the 3rd treatment chamber (13) that substrate is processed.

5. application system according to claim 4 (1),

It is characterized in that

Described chamber layout comprises the 4th treatment chamber (14) that is arranged in parallel with described the 3rd treatment chamber (13) that is connected to described the second transfer chamber (10).

6. application system according to claim 5 (1),

It is characterized in that

Described the 3rd treatment chamber (13) and described the 4th treatment chamber (14) comprise for the coated tool at the second coating processing settled layer on substrate.

7. application system according to claim 2 (1),

It is characterized in that

Described importing into/spread out of worktable (2) comprises and imports chamber (3) into and spread out of chamber (4).

8. application system according to claim 5 (1),

It is characterized in that

Described the first transfer chamber (5) and described the first treatment chamber (8) be connected the second treatment chamber (9) and be connected, and described the first treatment chamber (8) be connected the second treatment chamber (9) and be connected with described the second transfer chamber (10), and described the 3rd treatment chamber (13) be connected the 4th treatment chamber (14) and be connected with described the second transfer chamber (10).

9. application system according to claim 1 (1),

It is characterized in that

Described the first transfer chamber (5) comprises the first rotatable module (6) that has at least one substrate holder (7a, 7b) that keeps substrate.

10. application system according to claim 1 (1),

It is characterized in that

Described the second transfer chamber (10) comprises the second rotatable module (11) that has at least one substrate holder (12a, 12b) that keeps substrate.

11. the method for coated substrate in each described application system in according to claim 1 to 10 may further comprise the steps:

A) via importing the chamber into substrate is imported in the described application system;

B) described substrate is sent in the first transfer chamber;

C) described substrate is sent in the one in the first treatment chamber and the second treatment chamber to utilize first to process described substrate is processed;

D) described substrate is sent in the second transfer chamber; And

E) described substrate is sent in the one in the 3rd treatment chamber and the 4th treatment chamber to utilize second to process described substrate is processed.

12. method according to claim 11,

It is characterized in that

Described method is further comprising the steps of:

F) described substrate is sent to described the second transfer chamber from described the 3rd treatment chamber or the 4th treatment chamber; And

G) described substrate is sent in described the first treatment chamber or described the second treatment chamber to utilize the 3rd processing that described substrate is processed.

13. according to claim 11 or 12 described methods,

It is characterized in that

Step g) comprise the steps: described substrate is sent to and described step c) in the identical treatment chamber to utilize the 3rd to process described substrate is processed.

14. according to claim 11 or 12 or 13 described methods,

It is characterized in that

Described method is further comprising the steps of: h) described substrate is sent in described the first transfer chamber; And i) described substrate is sent to spreads out of in the chamber.

15. each described method in 14 according to claim 11,

It is characterized in that

Described method is used to produce the TFT thin film transistor.

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