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TW200945400A - Method for fabricating a triode field emitter monitor - Google Patents

Method for fabricating a triode field emitter monitor Download PDF

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Publication number
TW200945400A
TW200945400A TW97114161A TW97114161A TW200945400A TW 200945400 A TW200945400 A TW 200945400A TW 97114161 A TW97114161 A TW 97114161A TW 97114161 A TW97114161 A TW 97114161A TW 200945400 A TW200945400 A TW 200945400A
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Taiwan
Prior art keywords
carbon nanotube
substrate
forming
field emission
catalyst
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TW97114161A
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Chinese (zh)
Inventor
Tze-Yuan Wang
Chia-Shou Chang
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Foxconn Tech Co Ltd
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Priority to TW97114161A priority Critical patent/TW200945400A/en
Publication of TW200945400A publication Critical patent/TW200945400A/en

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Abstract

A method for fabricating a triode field emitter monitor includes the following steps: forming cathode electrode on a substrate; forming catalyst layer on the cathode electrode by self-assembly of catalyst powder thereon; growing carbon nanotubes on the cathode electrode; forming insulation layer with micro-cavity corresponding to the display lattice; forming gate electrode on the insulation layer; and capsulating the monitor.

Description

200945400 :九、發明說明: • 【發明所屬之技術領域】 本發明涉及-種平板監視器之製備方法,尤其涉 及一種碳奈米管場發射監視器之製備方法。 【先前技術】 碳奈米管場發射監視器為平板監視器之一種,藉 由施加電場使碳奈米管放電轟擊榮光粉而產生圖像。曰 ❹ ㉟’碳奈米管之生長難以控制,且分佈不均,故難以 得到較佳之畫面品質。 【發明内容】 、鑒於此,有必要提供一種碳奈米管分佈均勻、製 備成本低之碳奈米管場發射監視器之製備方法。 、本發明之碳奈米管場發射監視器之製備方法包括 以下=驟:提供一基底,在基底上沉積與監視器之顯 ❿讀陣相對應之陰極電極;形成催化劑層,即催化劑 粉末自組裝於陰極電極上;生成碳奈米管,即在催化 2層之輔助作用下,在陰極電極上生長碳奈米管;形 、、邑緣層即在基底上形成—絕緣層,該絕緣層上具 有與陰極電極相對應之微孔;形成閘極電極,即在絕 緣層表面沉積閘極電極;以及封裝監視器,即提供一 螢光屏’將螢光屏與基底封接,形成碳奈米管場發射 監視器。 项 與習知技術相比較,本發明碳奈米管場發射監視 6 200945400 旨之製備方法,利用自組裝方式’在靜電力或者磁力 • 之驅動下’將催化劑粉末均句且具選擇性地接合到陰 極,極上,形成催化劑層,進而可均句且選擇性地生 長石厌奈米官,製備出輝度分佈均句之碳奈米管場發射 監視器。 【實施方式】 ❹200945400: IX. Description of the invention: • Technical field to which the invention pertains The present invention relates to a method for preparing a flat panel monitor, and more particularly to a method for preparing a carbon nanotube field emission monitor. [Prior Art] The carbon nanotube field emission monitor is a type of flat panel monitor which generates an image by applying an electric field to discharge a carbon nanotube to bombard the glory powder. The growth of 曰 ❹ 35' carbon nanotubes is difficult to control and unevenly distributed, so it is difficult to obtain better picture quality. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a method for preparing a carbon nanotube field emission monitor with uniform distribution of carbon nanotubes and low preparation cost. The preparation method of the carbon nanotube field emission monitor of the present invention comprises the following steps: providing a substrate, depositing a cathode electrode corresponding to the display readout array of the monitor on the substrate; forming a catalyst layer, that is, a catalyst powder Assembling on the cathode electrode; forming a carbon nanotube, that is, growing a carbon nanotube on the cathode electrode under the auxiliary action of the catalytic layer 2; forming a heat insulating layer on the substrate, the insulating layer, the insulating layer Having a microhole corresponding to the cathode electrode; forming a gate electrode, that is, depositing a gate electrode on the surface of the insulating layer; and packaging the monitor, that is, providing a fluorescent screen to seal the fluorescent screen with the substrate to form a carbon nano Meter field emission monitor. Compared with the prior art, the carbon nanotube field emission monitoring of the present invention 6 200945400 is a preparation method for uniformly and selectively bonding the catalyst powder by a self-assembly method 'driven by electrostatic force or magnetic force'. To the cathode and the pole, a catalyst layer is formed, and then the carbon nanotube officer can be uniformly and selectively grown to prepare a carbon nanotube field emission monitor with a uniformity of luminance distribution. [Embodiment] ❹

圖1為本發明碳奈来管場發射監視器之製備流程圖。 其包括以下步驟: 提供基底11,在基底u上沉積與監視器之顯示點陣 相對應之陰極電極12 ; 形成催化劑層14’即催化劑粉末13自組裝於陰極電極 上12 ; ^ ^成^米管15,即在催化綱14之獅作用下,在 陰極電極12上生長碳奈米管15; :成絕緣層31,即在基底u上形成—絕緣層Μ,該 絕緣層31上具有與陰極電極12相對應之微孔32 ; .t朗極電極41,即在絕緣層31表面沉制極電極 41,以及 封聚監視器,即提供一螢光屏62,將螢光屏62與基底 11封接,形成碳奈米管場發射監視器。 下面t合具體圖示具體描述該碳奈米管場發射監視器 之製備過程。 請參閱® 2,首先提供-基底u,該基底^材料可選 7 200945400 用玻璃、陶莞、氧化石夕或氧化紹等絕緣材料,要求 表面平整度小於1微米,而且基底11能耐受碳奈米管15 生長溫度…般為大於·。c。根據監視器顯示點陣之 要求,藉由電錢、磁控減射等方法沉積複數陰極電極12。 將陰極電極12之上表面極化,使之帶有正電荷。 如圖3、4所示,藉由液浸方式將催化劑粉末 Ο ❹ 首先’製備催化劑粉末13 一 劑粉末13極化,使之帶有負電荷,再摻入到液體16中。 催化劑粉末13可為鐵㈣,C。)、錦㈣或其合金之一。 再=基底U浸入到含有已被極化之催化劑粉末13之液體 6:。液體16為水或者微酸液體。由於陰極電極U Γ末13分別帶有正負電荷,根據熱力學能量趨向最: 電= 上靜表電 電極12之上表面,即催化劑粉末13會自動地結 12 1 _過程中’“極 之局指量低點處可能造絲化末13排列 或者重叠’故對基底_加擾動,例如施加超聲波, =二全或右者結合錯誤之催化劑粉末13,從而備化劑 奋末!3均勻且有選擇性地分佈在陰極電極12上, 化劑層14 ’其厚度為幾奈来職十奈米不等。 除上述方式,射#由儒料 ^末心極化,使之帶有負電荷,再掺入到液體“中。 然後Μ化含有催化劑粉末13之液體16,形成載流氣體。 8 200945400 最後,將紐魏賴於麵u上,使催 組裝=。之_電極12之上表面形成催化= ί2帶有正電荷帶有負電荷,陰極電極 有不同之磁性或者電性,13及陰極電極12分別帶 w电r玍均可以實 於陰極電極12上,形成催化劑層14。末13自組裳 如圖5八所示,在基底以上形成一 〇 31上具有與陰極電極12相 —…生長空間。二:= =:Γ現成,。_==電 之轉时蚊,㈣料應當能 二優。選高溫破璃、塗敷絕緣 ❹ 上生’藉由化學氣相沉積法直接在催化劑層14 ί 即把基底11放入生長碳奈米管15用 ϋ入“〜性倾㈣,㈣加減預定溫度後 米管15。4 6块氣體,在催化劑層14之作用下生長碳奈 以而言’如圖沾所示’在形成催化劑層14之後, :=奈米管15,然後形成絕緣層31,該絕緣層31 納碳電極12相對應之微孔32,該微孔32用於容 如圖7所示,在絕緣層31表面沉積閉極電極41,沉積 9 200945400 方式可採用電子束m熱蒸發或濺射法。 如圖8所不’藉由封裝板61將螢光屏62與基底11封 接,裝配祕奈米管場發射監視^。螢光屏Μ包括一玻璃 基板62ΐ、-陽極透明導電層622及螢光層ό23。當在陽極 透明導電層622與陰極電極12上施加電壓後,碳奈米管15 發射出電子’閘極電極41職制電子之密度。當電子達到 螢光層623後’發出螢光,並經由陽極透明導電層622及 玻璃基板621 ’產生圖像。 綜上所述,本發明符合發明專利之要件,妥依法提出 專利申sf。㈣上料者僅為本發明讀佳實闕,舉凡 熟悉本案技藝之人士,在纽本發明精神所作之等效修飾 或變化,皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 圖1為本發明-較佳實施方式巾製備錢米管場發射 監視器之流程圖。 圖2為本發明之一較佳實施方式中沉積有陰極電極之 基底示意圖。 圖3為圖2中基底形成催化劑層之示意圖。 圖4為圖2中基底自組裝形成催化劑層後之示意圖。 圖5A為圖4中基底形成絕緣層後之示意圖。 圖5B為圖4中基底生成碳奈米管後之示意圖。 圖6為圖5A或圖5B中基底生成碳奈米管後之示意圖。 圖7為圖6中絕緣層上形成閘極電極後之示意圖。 200945400 圖8為本發明一實施例中碳奈米管場發射監視器螢光 屏封接後示意圖。 【主要元件符號說明】 基底 11陰極電極 12 催化劑粉末 13催化劑層 14 碳奈来管 15液體 16 絕緣層 31微孔 32 閘極電極 41封裝板 61 螢光屏 62玻璃基板 621 陽極透明導電層 622螢光層 623 111 is a flow chart showing the preparation of a carbon nanotube field emission monitor of the present invention. The method comprises the steps of: providing a substrate 11 on which a cathode electrode 12 corresponding to a display dot matrix of a monitor is deposited; forming a catalyst layer 14', that is, a catalyst powder 13 self-assembled on the cathode electrode 12; ^^ into a meter The tube 15, that is, under the action of the lion of the catalyst, the carbon nanotube 15 is grown on the cathode electrode 12; the insulating layer 31 is formed, that is, the insulating layer 形成 is formed on the substrate u, and the insulating layer 31 has a cathode The electrode 12 corresponds to the micropore 32; the .t plate electrode 41, that is, the electrode electrode 41 is deposited on the surface of the insulating layer 31, and the condenser monitor, that is, a phosphor screen 62 is provided, and the phosphor screen 62 and the substrate 11 are provided. Sealed to form a carbon nanotube field emission monitor. The following is a detailed description of the preparation process of the carbon nanotube field emission monitor. Please refer to ® 2, first provide - substrate u, the substrate ^ material optional 7 200945400 with glass, pottery, oxidized stone or oxide oxide, etc., requires surface flatness less than 1 micron, and substrate 11 can withstand carbon The growth temperature of the nanotube 15 is generally greater than ·. c. The plurality of cathode electrodes 12 are deposited by means of electricity, magnetron reduction, etc., according to the requirements of the monitor display dot matrix. The upper surface of the cathode electrode 12 is polarized to have a positive charge. As shown in Figs. 3 and 4, the catalyst powder Ο ❹ is first subjected to liquid immersion to prepare a catalyst powder 13 for a powder 13 which is negatively charged and then incorporated into the liquid 16. The catalyst powder 13 may be iron (tetra), C. ), Jin (four) or one of its alloys. Further, the substrate U is immersed in the liquid 6 containing the catalyst powder 13 which has been polarized. Liquid 16 is water or a slightly acidic liquid. Since the cathode electrode U has a positive and negative charge, respectively, according to the thermodynamic energy trend: electricity = the surface of the upper surface of the electric electrode 12, that is, the catalyst powder 13 will automatically knot 12 1 _ in the process of 'the pole At the low point, the filaments may be arranged or overlapped. Therefore, the substrate is disturbed, for example, ultrasonic waves are applied, = two or the right is combined with the wrong catalyst powder 13, so that the preparation agent is exhausted! 3 uniform and selective Sexually distributed on the cathode electrode 12, the thickness of the layer 14' is a few tenths of a tenth of a mile. In addition to the above method, the shot # is polarized by the end of the ruthenium, so that it has a negative charge, and then Incorporate into the liquid "in. The liquid 16 containing the catalyst powder 13 is then deuterated to form a carrier gas. 8 200945400 Finally, we will put New Weilei on the surface, so that the assembly =. The surface of the electrode 12 forms a catalyst = ί2 with a positive charge and a negative charge, the cathode electrode has different magnetic or electrical properties, and 13 and the cathode electrode 12 respectively have a voltage of r 玍, which can be realized on the cathode electrode 12, The catalyst layer 14 is formed. The final 13 self-assembled skirts have a growth space with the cathode electrode 12 formed on the substrate 31 as shown in Fig. 5-8. Two: = =: Γ ready,. _==Mosquito when the electricity is turned, (4) should be able to be two excellent. Select high-temperature broken glass, coated with insulating ❹ 上生 'by chemical vapor deposition directly on the catalyst layer 14 ί, then put the substrate 11 into the growing carbon nanotubes 15 for intrusion "~ sexual tilt (four), (four) addition and subtraction of the predetermined temperature After the rice tube is 15.46 gas, the carbon layer is grown under the action of the catalyst layer 14 to be 'shown as shown' after forming the catalyst layer 14, := the nanotube 15 and then forming the insulating layer 31, The insulating layer 31 has a micropore 32 corresponding to the nanocarbon electrode 12, and the micropore 32 is used to deposit a closed electrode 41 on the surface of the insulating layer 31 as shown in FIG. 7. The deposition method 9 200945400 can adopt electron beam m thermal evaporation. Or sputtering method. As shown in Fig. 8, the fluorescent screen 62 is sealed with the substrate 11 by the package board 61, and the Mien tube field emission monitoring is assembled. The fluorescent screen includes a glass substrate 62, and the anode is transparent. The conductive layer 622 and the phosphor layer ό 23. When a voltage is applied to the anode transparent conductive layer 622 and the cathode electrode 12, the carbon nanotube 15 emits a density of electrons of the gate electrode 41. When the electron reaches the phosphor layer 623 After 'fluorescence, and through the anode transparent conductive layer 622 and the glass substrate 621 ' In summary, the present invention complies with the requirements of the invention patent, and the patent application sf is properly filed according to the law. (4) The material supplier only reads the good article of the present invention, and those who are familiar with the skill of the present invention are made in the spirit of the invention. Equivalent modifications or variations are intended to be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart of a preferred embodiment of a towel for preparing a Qianmi pipe field emission monitor. FIG. 3 is a schematic view showing the formation of a catalyst layer in the substrate of FIG. 2. FIG. 4 is a schematic view of the substrate in FIG. 2 after self-assembly to form a catalyst layer. FIG. 4 is a schematic view of the substrate after the formation of the insulating layer. Fig. 5B is a schematic view of the substrate of Fig. 4 after the formation of the carbon nanotubes. Fig. 6 is a schematic view of the substrate of Fig. 5A or Fig. 5B after the formation of the carbon nanotubes. A schematic diagram of forming a gate electrode on a medium insulating layer. 200945400 Fig. 8 is a schematic view showing the sealing of a carbon nanotube field emission monitor fluorescent screen according to an embodiment of the present invention. [Description of main components] Base 11 cathode electrode 1 2 Catalyst powder 13 Catalyst layer 14 Carbon nanotubes 15 Liquid 16 Insulation layer 31 Micropores 32 Gate electrode 41 Package board 61 Fluorescent screen 62 Glass substrate 621 Anode transparent conductive layer 622 Fluorescent layer 623 11

Claims (1)

200945400 、申請專利範圍 1. 一種碳奈米管場發射監視器之製備 下步驟: 法’其包括以 提供一基底,在基底上沉積與監 對應之陰極電極; 顯示點陣相 電極 •形成催化劑層,即催化劑粉末自組裝於陰極 ❹ 生成碳奈米管,即在催化劑層之輔助作用下, 極電極上生長碳奈米管; 下’在陰 开=絕緣層,即在基底上形成—絕緣層,該絕緣層 上具有與陰極電極相對應之微孔; 形成閘極電極,即在絕緣層表面沉積閘極電極;以 封裝監視器,即提供一螢光屏,將螢光屏與基底封 接’形成碳奈米管場發射監視器。200945400, patent application scope 1. Preparation of a carbon nanotube field emission monitor: The method includes: providing a substrate, depositing and monitoring a cathode electrode on the substrate; displaying a lattice phase electrode; forming a catalyst layer , that is, the catalyst powder self-assembles into the cathode ❹ to form a carbon nanotube, that is, under the auxiliary action of the catalyst layer, the carbon nanotube is grown on the electrode; the lower layer is formed on the substrate, ie, on the substrate, the insulating layer The insulating layer has micropores corresponding to the cathode electrode; forming a gate electrode, that is, depositing a gate electrode on the surface of the insulating layer; and packaging the monitor, that is, providing a fluorescent screen to seal the fluorescent screen to the substrate 'Formation of a carbon nanotube field emission monitor. 2.如申請專利範圍第1項所述之碳奈米管場發射監視 器之製備方法,其中形成催化劑層包括以下步驟: 製備被極化之催化劑粉末,並極化該陰極電極,使 催化劑粉末及陰極電極分別具有相反之磁性或者電 性; 將催化劑粉末及該基底摻入液體中,使催化劑粉末 自組裝到該陰極電極上,形成催化劑層。 3.如申請專利範圍第2項所述之碳奈米管場發射監視 器之製備方法’其中將該基底摻入到該液體之過程 中,擾動該基底以去除結合不完全或者結合錯誤之催 12 200945400 化劑粉末。 4.如申請專利範圍第1項所述之碳奈米管場發射監視 器之製備方法’其中形成催化劑層包括以下步驟: 製備被極化之催化劑粉末,並極化該陰極電極,使 催化劑粉末及陰極電極分別具有相反之磁性或者電 性; 將催化劑粉末掺入液體中; 汽化含有催化劑粉末之液體,形成載流氣體;及 © 將載流氣體噴灑於基底上,使催化劑粉末自組裝於 陰極電極上,形成催化劑層。 5·如申請專利範圍第1項所述之碳奈米管場發射監視 器之製備方法,其中該形成絕緣層之步驟在該生成碳 奈米管之步驟之前進行。 6·。如申請專利範圍第1項所述之碳奈米管場發射監視 器之製備方法,其中該形成絕緣層之步驟在該生成碳 奈米管之步驟之後進行。 © 7.如中請專利範㈣μ所述之碳奈米管場發射監視 器之製備方法,其中沉積閘極電極之方法為電子束蒸 發、熱蒸發及濺射法中一種。 132. The method for preparing a carbon nanotube field emission monitor according to claim 1, wherein the forming the catalyst layer comprises the steps of: preparing a polarized catalyst powder, and polarizing the cathode electrode to make a catalyst powder And the cathode electrodes respectively have opposite magnetic or electrical properties; the catalyst powder and the substrate are incorporated into a liquid, and the catalyst powder is self-assembled onto the cathode electrode to form a catalyst layer. 3. The method for preparing a carbon nanotube field emission monitor according to claim 2, wherein the substrate is incorporated into the liquid, and the substrate is disturbed to remove incomplete bonding or a combination of errors. 12 200945400 Chemical powder. 4. The method for preparing a carbon nanotube field emission monitor according to claim 1, wherein the forming the catalyst layer comprises the steps of: preparing a polarized catalyst powder, and polarizing the cathode electrode to make a catalyst powder And the cathode electrode respectively have opposite magnetic or electrical properties; doping the catalyst powder into the liquid; vaporizing the liquid containing the catalyst powder to form a carrier gas; and © spraying the carrier gas onto the substrate to self-assemble the catalyst powder to the cathode On the electrode, a catalyst layer is formed. 5. The method of preparing a carbon nanotube field emission monitor according to claim 1, wherein the step of forming the insulating layer is performed before the step of forming the carbon nanotube. 6·. The method for producing a carbon nanotube field emission monitor according to the first aspect of the invention, wherein the step of forming the insulating layer is performed after the step of forming the carbon nanotube. © 7. The method for preparing a carbon nanotube field emission monitor according to the patent specification (4), wherein the method of depositing the gate electrode is one of electron beam evaporation, thermal evaporation and sputtering. 13
TW97114161A 2008-04-18 2008-04-18 Method for fabricating a triode field emitter monitor TW200945400A (en)

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