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TWI252562B - Pattern formation method of carbon nanotube - Google Patents

Pattern formation method of carbon nanotube Download PDF

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Publication number
TWI252562B
TWI252562B TW93101556A TW93101556A TWI252562B TW I252562 B TWI252562 B TW I252562B TW 93101556 A TW93101556 A TW 93101556A TW 93101556 A TW93101556 A TW 93101556A TW I252562 B TWI252562 B TW I252562B
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TW
Taiwan
Prior art keywords
carbon nanotube
layer
cathode
forming
electron emission
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TW93101556A
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Chinese (zh)
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TW200525699A (en
Inventor
Shr-Shiun Chen
Jiun-Yan Shiau
Shr-Jian Shiau
Shie-Heng Li
Kuei-Wen Jeng
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Teco Nanotech Co Ltd
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Priority to TW93101556A priority Critical patent/TWI252562B/en
Publication of TW200525699A publication Critical patent/TW200525699A/en
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Publication of TWI252562B publication Critical patent/TWI252562B/en

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Abstract

This invention provides a pattern formation method of a carbon nanotube for manufacturing a patterned electron emitter layer with high resolution. A mask rib with high resolution is manufactured by patterning a negative photoresist material applicable for micro-lithographic process. A carbon nanotube layer is formed by spray-coating a spray-coating liquid of carbon nanotube. The mask rib is removed and at the same time the patterned carbon nanotube is made to securely adhere to a cathode conductive layer to form the electron emitter layer through a sintering process. The electron emitter layer prepared based on the invented method can satisfy the requirement of high resolution pattern. Moreover, because the carbon nanotube is manufactured by spray-coating and thus the coating thickness is thin, the generation efficiency and uniformity of electrons are high.

Description

!252562!252562

五、發明說明(1) Γ 發明所屬之技術領域】 d 本發明係有關於一種場發顯示器(field emlssi isplay; FED)陰極面板電子源 以噴塗奈米碳管之方式製作陰極板之V乍:二尤:曰一種 化製作技術。 才扳之电子發射源層之圖騰 先前技術】 子發是一種利用電場俾使陰極電 ::激發陽極板之螢光粉體,俾使螢光粉體產生光:由: 示區域尺寸之大小可依製程及產: 而求ι作,此外也沒有如平面液晶顯示器之視角問題。 降# 7種習知的場發射顯示器1 a其結構至少包含陽極3说 與陰極間真空區域之間⑮,及作為陽極與陰極之間: 參閱第一圖所一陽極3延少包含一陽極玻璃基 ,3la’ 一陽極導電層32a,一螢光粉體層33a;而一陰極 3至夕包含一陰極玻璃基板4ia,一陰極導電層 ^發射源層43a ;其中陽極3a與陰極4a之間隔係由阻隔壁“ a配置,因此對於阻隔壁之功能,由第一圖之結構可理 ,址為保持陰極板與陽極板之間之真空區域之維繫,並藉 提,之一外加電場,俾使陰極板上之電子源產生電子並^ 向陽極板上之螢光粉體激發而使螢光粉體發光,此外需避 ^此一外加電場之產生過程陰極板與陽極板產生導通,阻 ^壁之材料需為一種絕緣材質。由該電子之產生模式係藉V. INSTRUCTIONS OF THE INVENTION (1) 技术 The technical field to which the invention pertains] d The present invention relates to a field emission display (FED) cathode panel electron source for producing a cathode plate by spraying a carbon nanotube: Two special: a production technology. Totem of the electron emission source layer of the prior art] The hair is a kind of electric field 俾 to make the cathode electricity: the phosphor powder of the anode plate is excited, and the phosphor powder is generated by the light: by: the size of the area can be According to the process and production: and do not want to do, in addition to the perspective of the flat-panel LCD display.降# The conventional field emission display 1 a has at least the structure between the anode 3 and the vacuum region between the cathodes 15 and between the anode and the cathode: Referring to the first embodiment, the anode 3 is extended to contain an anode glass. Base, 3la' an anode conductive layer 32a, a phosphor powder layer 33a; and a cathode 3 to a cathode glass substrate 4ia, a cathode conductive layer ^ emission source layer 43a; wherein the anode 3a and the cathode 4a are spaced apart It is configured by the barrier wall "a, so the function of the barrier wall can be rationalized by the structure of the first figure. The site is to maintain the vacuum region between the cathode plate and the anode plate, and one of them is applied, and an electric field is applied. The electron source on the cathode plate generates electrons and is excited by the phosphor powder on the anode plate to cause the phosphor powder to emit light. In addition, the cathode plate and the anode plate are electrically connected during the generation of the applied electric field, and the wall is blocked. The material needs to be an insulating material.

1252562 五、發明說明(2) 由该電場C E )發生而形成,該電場(£ )之強度,與各 該單元結構5a之該單元陽極51 a與該單元陰極52a之提供電 壓有正比關係,與各該單元結構之該單元陽極5 1 a與該單 元陰極5 2 a間之距離為反比關係;因此,各該單元結構之 單元陽極5 1 a與該單元陰極52a間之距離,直接影響鄰近區 域之该電場(E )之強度;是以各陰陽極之板上之塗層厚 度均勻性,及阻隔壁53a之該厚度之均勻性對於該場發射 顯示器1 a所呈現的發光均勻性有決定性的因素。1252562 V. DESCRIPTION OF THE INVENTION (2) Formed by the electric field CE), the intensity of the electric field (£) is proportional to the voltage supplied by the unit anode 51a and the unit cathode 52a of each unit structure 5a, and The distance between the anode 5 1 a of the unit structure and the cathode 5 2 a of the unit structure is inversely proportional; therefore, the distance between the unit anode 5 1 a of the unit structure and the unit cathode 52a directly affects the adjacent area. The intensity of the electric field (E); the uniformity of the thickness of the coating on each of the anode and cathode plates, and the uniformity of the thickness of the barrier wall 53a is decisive for the uniformity of illumination exhibited by the field emission display 1a. factor.

近年來一種新的奈米碳管材料(Carbon nanQtubeM 1991年被 Iijima提出後(Nature 354, 56 (1991)),由於 該材料具有高長寬比(aspect ratio)、高機械強度、不易 被毒化(high chemical resistance)、不易磨耗、低啟閘 電場(threshold electric field)等特性,已成為一種場 發射電子源(filed emission electrons)之材料,被廣泛 研究(Science 269,pl550 (1995); SID,98 Digest,、 pl052 (1998); SID,01 Digest, p316 (2001))。其中所 謂的場電子發射係利用一種施加於材料表面之高電場 (high electric filed),將材料能障壁(energy b=rier )的厚度減小致使電子可藉由量子力學之通道效應 (Quantum- mechanical tunneling effect)從材料表面脫 離成為自由電子(J. Appl. phys· 39, 7, pp 3 504 ~~ 3504 (1 9 6 8 )),因此場電子發射的電流可藉由材料之一具有低 工作函數的表面而提昇效果,又,此電子產生方式係藉由 對該材料施予一電場來達成,無須對材料提供一定熱^,In recent years, a new carbon nanotube material (Carbon nanQtubeM was proposed by Iijima in 1991 (Nature 354, 56 (1991)), because the material has high aspect ratio, high mechanical strength, and is not easily poisoned (high chemical Characteristics such as resistance), low-resistance electric field, etc., have become a material for field-emitting electrons (Science 269, pl550 (1995); SID, 98 Digest, Pl052 (1998); SID, 01 Digest, p316 (2001)). The so-called field electron emission system utilizes a high electric filed applied to the surface of the material to make the energy barrier (energy b=rier) The reduction in thickness causes electrons to detach from the surface of the material into free electrons by the Quantum- mechanical tunneling effect (J. Appl. phys· 39, 7, pp 3 504 ~~ 3504 (1 9 6 8 ) Therefore, the current emitted by the field electrons can be enhanced by the surface of one of the materials having a low work function, and the electron generation method is performed by applying an electric field to the material. To achieve, there is no need to provide some heat to the material.

五、發明說明(3) 因此這類場電子發射裳置素有冷陰極 稱。因此這類奈米碳管已 w〇ld cathode)之 極板之電子發射源的應用。〜、曰i %、用於場發射顯示器陰 這類包含奈米碳管之電子發 種以化學蒸鍍方式將碳原子沉";:之製作方式,有; 電層上以形成奈米碳管,該方J =於陰極板之陰極導 所需之觸媒金屬層,然後^興蒗圖騰化成長奈米碳管 長奈米碳管 '然以目前m:去於觸媒金屬層上成 之奈米碳管於導電声:“雖已可穩定成長-均句長度 極電子發射源過以解析之圖騰化陰 於奈米碳管之一端仍俾户—^予…鍍成長之奈米碳管多會 源電子產生之效率,必;:=匕j屬♦此將影響該電子射 產生效率,另,以該製程成太:?面處理方式以提昇電子 為此,-種可:m:型(2〇叶)尺寸以τ,多所限制。 膜製程方式製作降陽4成本之場發射顯示器之製作係以厚 :5 0 2 3 9 5 ),提供^與憂、板之各膜層(台灣發明專利公告號 維,其中一種以網印愈/\厚膜製作電子發射源提供一新思 刊不斷被提出,然即各製作陰極電子發射源之專利或期 發射源層6 〇仍有部、分 f此’對於以網印方法印製之電子 由於含奈米碳管之印續待克服(如弟一圖所示);第一、 上,以維持所印製 用塗料黏度通常至少1 0萬cps以 刷之製程,受限於’、之外型與精度。第二、為配合網印 求,因此所製作之冷反^網布結構及乳膠厚度的基本要 主層區域至少大於70// m以上,難滿足 1252562 五、發明說明 高解析產 上,並且 度分布偏 密度差異 其有彳艮好 上,因此 下墨製程 制中之說 量的奈米 奈米碳管 所示,致 •種含多 (4) 品之需求 網布上之 差通常達 ,而影響 的長寬比 為使奈米 ,對於碳 明,網印 碳管6 2將 埋藏於固 使電子產 層璧奈米 場(E) 4V/# m下之 職是,一種如 源層並 乃結合 以一種 影製程 製作, 合:一 為隆罩 謂的隆 阻隔層 製作電 兼具高效率 一種本發明 以喷裝方式 圖騰化之高 以製作高解 、一種可微 阻隔層可圖 罩阻隔層可 附著之喷塗 子發射源層 。另,所 網結也易 4〜8" m, 發光之均 ’碳管長 碳管分布 管長度需 後之圖騰 被塗料包 著劑或導 生的效率 碳管以網 電流密度 何而可製 電子產出 人之習知 噴塗奈米 分子聚酯 析圖騰化 影製程之 騰化製作 藉以燒結 碳管;三 ,可提高 印製之塗層厚度至少1 m以 ^成所印製後之圖騰之表面厚 易造成電子發射源電子產生之 句性。第三、奈米破管62因為 度與雙管直徑比例通常達4 0以 於塗料中,且不影響網印製之 加以限制,不過又因第二點限 各度達JJ1如此也易造成大 覆,即使經過燒結後仍有部分 電材料6 1之内,可參考第二圖 大大降低,例如發明人乃設置 印製作之電子發射源層其在電 通常=在10 mA/cm2以下。 2雷巧解析圖騰化之電子發射 發明^作。㈣人 碳管噴塗、、/ h案號9 2 1 3 1 5 9 0 ) 類負型層-種可微 電子發射源:嘻罩阻隔層之 高分子兔咕_ ,據此製作之結 高解析之電早負型光阻層製作 過程氧化移發射源;二、所 、配合以噴二,並移除於蔭罩 陰極電子蘇f奈米碳管噴塗液 射源層之電子產生V. INSTRUCTIONS (3) Therefore, such field electron emission devices have a cold cathode scale. Therefore, such carbon nanotubes have been used as electron emitters for the plates of the electrodes. ~, 曰i%, for the field emission display, such as the carbon nanotubes containing carbon nanotubes, the method of chemical vapor deposition to sink carbon atoms ";: the production method; Tube, the side J = the catalytic metal layer required for the cathode of the cathode plate, and then the Xingyu totemized growth carbon nanotube long carbon nanotubes 'the current m: to the catalyst metal layer Nano carbon tube in the conductive sound: "Although it has been able to grow steadily - the average length of the electron emission source has been analyzed by the totem. The Yin is in the end of the carbon nanotubes. The efficiency of multi-source electron generation must be;:=匕j belongs to ♦This will affect the efficiency of the electron emission. In addition, the process is completed: the surface treatment method is used to enhance the electrons, and the type can be: m: type The size of (2 〇 leaf) is limited by τ, and the film processing method is used to make the film of the 4th-generation field emission display with a thickness of 5 0 2 3 9 5 ). Taiwan’s invention patent announcement number dimension, one of which is provided by the screen printing//thick film production electron emission source to provide a new thought, and is constantly being proposed. That is, each patent or period source layer 6 that produces a cathode electron emission source still has a part, a part, and the electrons printed by the screen printing method are to be overcome due to the printing of the carbon nanotubes containing the carbon nanotubes. First, the first, to maintain the viscosity of the printed paint is usually at least 100,000 cps to brush the process, limited by ', appearance and accuracy. Second, in line with the network printing, so the production The basic structure of the cold anti-mesh structure and the thickness of the latex is at least greater than 70//m, which is difficult to satisfy 1252562. 5. The invention shows that the high-resolution production is high, and the difference in the degree of density distribution is good. The amount of nano-carbon nanotubes in the ink-in-process system shows that the difference between the demand and the mesh of the multi-(4) product is usually the same, and the aspect ratio of the influence is nano, for carbon. Ming, the screen printing carbon tube 6 2 will be buried in the solid production layer of the nano-field (E) 4V / # m under the job, a source layer and combined with a shadow process, combined: Yi Long The cover is said to be a barrier layer for making electricity and has high efficiency. The height of Tenghua is to make a high solution, a micro-barrier layer can be attached to the spray layer of the spray-coated layer of the barrier layer. In addition, the network is also easy to 4~8" m, the light-emitting carbon tube long carbon tube The length of the distribution tube needs to be after the totem is coated by the coating agent or the efficiency of the carbon tube to the grid current density can be made electronically produced by the person who knows the spray nanometer molecular polyester totemization process of the process of Tenghua production Sintered carbon tube; Third, the thickness of the printed coating can be increased by at least 1 m to form the surface of the totem after printing, which is easy to cause electrons generated by the electron emission source. Third, the tube is broken by 62 degrees. The ratio of the diameter to the double tube is usually up to 40% in the paint, and does not affect the limitation of the screen printing. However, because the second point is limited to JJ1, it is easy to cause a large overlap, even if there is still some electricity after sintering. Within the material 61, it can be greatly reduced with reference to the second figure. For example, the inventors set up an electron-emitting source layer which is printed at a normal level of electricity = 10 mA/cm2 or less. 2 Lei Qiao analysis of the electronic emission of the totemization invention ^. (4) Human carbon tube spraying, / h case number 9 2 1 3 1 5 9 0 ) Negative type layer - kind of micro electron emission source: polymer rabbit 咕 阻 阻 阻 , , , , , , , , , The electric pre-negative photoresist layer is oxidized and transferred to the source; the second is combined with the second spray, and is removed from the cathode of the shadow mask cathode electrons.

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五'發明說明(5) 效率。可滿足以上之需求 【發明内容】 有鑑於習知場發射顯示器之陰極電子發射源層之 製i !:之”蒸鍵直接於陰極電極上產生奈米石炭管,並: 批n解析之陰極電子發射源層,不過仍僅限於放曰可 i ^,且所需之設備成本昂貴’製程繁複,又,、另曰曰圓基 均句性及多數的奈米碳管仍埋藏;^度不均’影響發光 :降低,電流密度降低,並且益〕冤子產生致 層之製作,:琢發射顯示器之陰極電子笋射 碳管噴塗液二【:影二:陰罩限隔層並結合噴i夺; 喊層之厚度均句性及可控制並提高電子發射 本發日月之發射電流密度。 方法,可、 要目的,係提供一種太半計势 本高解析電子發射源r厌官之圖騰形成 法,提# 目的,係提供一種夺γ $ 除。種餐罩阻隔層該製作方法m:::: 号务日月 I法,仍可絡又—目的’係提供一種奈半石山其 I發射馮届、持以喷塗奈米碳管噴塗、夜之、二二圖騰形成方 ’可提升電流密度。液之特性所製作之電子 為達上述所謂之諸目的,太淼^ X明係提供一種奈米碳管 第ίο頁 -- 1.- 1252562 五、發明說明(6) _ ___ 圖騰形成方法製作電子發射源層43; 塗液極性接近之高分子聚醋類負型光随、用與奈米碳管噴 類負型光阻層80,"三圖所示以二作高分子聚醋 極,板4LL之陰極導電層处圖騰化=顯Μ程於陰 如弟四圖所示之藤罩阻隔層結構7'〇,其二:罩阻隔層70, k二圖騰化之陰極電子發射源層43為鏤介:^罩設計係以 :為J J :米碳管喷塗液與陰極電極層二ί域Γ7域以; 者贺塗不米碳管噴塗液於該所 ,復之區或,接 第五圖所示,經過一簡單乾焊程序J ^隔層70表面,如 或一真空燒結,以氧化或汽化 罩高溫燒結’ 過程圖騰化區域内之奈 鮮;C構70,此 示。以本方源層,如第六圖及第七圖所 解析之鏤空區i79 ϊ隔層70以微影製程可圖騰化高 ,鄰接之非電i恭封Ξ【域面積至少可小於2〇x2〇a m以下 以噴塗製程製x 、士每間隙可以小於20// in以下,此外 該電子發射源_可提回電子發射源之電流密度,並維持各 I本發明之電子發射均勻性。 可應用以微///含·力分子聚酉旨負型光阻劑(乾膜 |於高溫燒結或直二植二膜層厚度至少10"威上為佳,並 影劑,以提供i =、、、、°過程可被完全氧化或汽化移除;顯 製作蔭罩阻屑、尚分t聚酯負型光阻劑(乾膜)於微影製程 溶劑成分可丄Γ Ϊ影藥劑;奈米碳管噴塗溶液,溶液中之 分散於i中之^定溫度範圍下揮發,具有使奈米碳管懸浮 ’、 寺性’溶液内含必要之固著劑,可使得該奈Five 'invention descriptions (5) efficiency. The above requirements can be met. [Invention] In view of the conventional cathode emission electron emission source layer of the field emission display, the "steam" bond directly generates a carbon nanotube tube on the cathode electrode, and: the n-analyzed cathode electron The source layer is emitted, but it is still limited to the release of the equipment, and the required equipment cost is expensive. The process is complicated, and the other round carbon bases are still buried and the majority of the carbon nanotubes are still buried. 'Influencing luminescence: lowering, lowering the current density, and benefiting the production of the layer by the scorpion, 阴极 阴极 琢 之 之 阴极 阴极 阴极 阴极 阴极 阴极 阴极 阴极 阴极 阴极 阴极 : : : : : : : : : : : : : : : : : : The thickness of the shouting layer is uniform and can control and increase the emission current density of the electron emission. The method, the purpose, the purpose is to provide a too half-potential high-resolution electron emission source. The law, mention # purpose, is to provide a kind of gamma y. In addition, the kind of meal cover barrier layer m:::: The number of the sun and the moon I method, still can be used again - the purpose of the Department provides a kind of Nai Shishanshan I launch von Spraying carbon nanotubes, The night, the two-two totem forming side can increase the current density. The electrons produced by the characteristics of the liquid are for the above-mentioned so-called purposes, and the X-Ming system provides a kind of carbon nanotubes. ίο Page-- 1.- 1252562 V. Description of the invention (6) _ ___ Totem forming method to fabricate the electron emission source layer 43; the polymer liquid is close to the high-molecular polyacetate negative-type light, and the nano-carbon tube spray-type negative-type photoresist layer 80, &quot The three figures show two high-polymer polystyrene poles, the totemization of the cathode conductive layer of the plate 4LL = the vine cover barrier structure 7'〇 shown in the fourth figure of Yin Rudi, the second: the cover barrier The layer 70, k two totemized cathode electron emission source layer 43 is a 镂介: ^ hood design system to: JJ: rice carbon tube spray liquid and cathode electrode layer two Γ domain Γ 7 domain; The tube spray liquid is in the area, in the complex area or, as shown in the fifth figure, after a simple dry soldering procedure J ^ spacer 70 surface, such as a vacuum sintering, oxidation or vaporization cover high temperature sintering 'process totemization area The inner layer is the same as the C structure 70. The hollow layer i79 ϊ compartment 70 is analyzed by the source layer, as shown in the sixth and seventh figures. The shadow process can be as high as the totem, and the adjacent non-electricity is sealed. [The domain area can be at least less than 2〇x2〇am or less. The spray process can be less than 20//in, and the electron emission source is _ The current density of the electron emission source can be extracted, and the electron emission uniformity of the present invention can be maintained. The micro///····························· The thickness of the second planting layer is at least 10" is superior to the film, and the agent can be completely oxidized or vaporized to remove the i =, , , , °; the shadow mask is formed to prevent chipping, and the polyester is still negative. The type of photoresist (dry film) in the lithography process solvent composition can be used as a shadow agent; the carbon nanotube spray solution, the solution is dispersed in the temperature range of i, volatilized, has a carbon nanotube suspension ', Temple' solution contains the necessary fixative to make the Nai

第11頁 1252562 五、發明說明(7) 米碳管藉由固著劑連接於一電子裝置之陰極構造噴塗表面 ,及分散劑,以當之分散喷塗溶液内之各該粉體材料。 本發明之一種奈米碳管之圖騰形成方法包含有下列步 驟:(1 )於陰極(玻璃)基板4 1含陰極導電層之一側實施製 作一高分子聚酯負型光阻層8 0 ;(2 )以微影製程圖騰化所 欲實施之電子發射源層之鏤空區域7 2以製作為所謂的蔭罩 阻隔層7 0 ;( 3 )喷塗奈米碳管喷塗溶液,俾使奈米碳管填 充沾附於鏤空區域7 2内,以為將來所謂之電子發射源層4 3 ;(4 )以高溫燒結或真空燒結移除蔭罩阻隔層7 0及附著於 其上之非有效之奈米碳管,並在此燒結過程可使鏤空區域 7 2内之奈米碳管層固著於陰極導電層4 2上,以形成電子發 射源層4 3。 為了使 貴審查委員能更進一步暸解本發明之特徵及 技術内容,請參閱以下有關本發明之詳細說明與附圖,然 而所附圖式僅提供參考與說明用,並非用來對本發明加以 限制者。 【實施方式】 本發明係提供一種奈米碳管之圖騰形成方法製作高解 析之圖騰化電子發射源層;利用可微影製程之負型光阻材 料圖騰化製作高解析之蔭罩阻隔層,再以喷塗奈米碳管喷 塗液形成奈米碳管層,接著以燒結過程除蔭罩阻隔層並同 時使圖騰化之奈米碳管層固著於陰極導電層以形成電子發 射源層,依本發明方法實施之電子發射源層可滿足高解析 圖騰之需求,且以喷塗之製作奈米碳管層,塗層厚度薄,Page 11 1252562 V. INSTRUCTION DESCRIPTION (7) The carbon nanotube is connected to the cathode of the electronic device by a fixing agent to spray the surface, and a dispersing agent to disperse the powder material in the spraying solution. The method for forming a totem of a carbon nanotube of the present invention comprises the following steps: (1) forming a high molecular polyester negative photoresist layer 80 on one side of the cathode (glass) substrate 41 containing a cathode conductive layer; (2) using a lithography process totemize the hollowed out region 7 2 of the electron emission source layer to be fabricated as a so-called shadow mask barrier layer 70; (3) spraying a carbon nanotube spray solution, The carbon nanotube filling is adhered to the hollow region 7 2 to be the so-called electron emission source layer 4 3 in the future; (4) removing the shadow mask barrier layer 70 by high temperature sintering or vacuum sintering and attaching it to the non-effective one The carbon nanotubes, and in this sintering process, can fix the carbon nanotube layer in the hollow region 7 2 on the cathode conductive layer 42 to form the electron emission source layer 43. The detailed description of the present invention and the accompanying drawings are to be understood by the accompanying claims . [Embodiment] The present invention provides a totem forming method of a carbon nanotube to produce a high-resolution totemized electron emission source layer; and a high-resolution shadow mask barrier layer by utilizing a negative-type photoresist material totem in a lithography process, Then, the carbon nanotube layer is formed by spraying the carbon nanotube spray liquid, and then the shadow mask barrier layer is removed by the sintering process, and at the same time, the totemized carbon nanotube layer is fixed on the cathode conductive layer to form an electron emission source layer. The electron emission source layer implemented by the method of the invention can meet the requirement of high-resolution totem, and the carbon nanotube layer is prepared by spraying, and the coating thickness is thin.

第12頁 1252562Page 12 1252562

電子產生效率與均勻性均高。 請參考第三圖到第4« 管之圖騰形成方法製作古::斤示本發明實施之一種奈米礙 用高分子聚醋負型光之圖騰化電子發射源層;選 陰極導電層-㈣,匕::式實施塗覆於陰極基板之有 (laminate)將光阻乾負型光阻乾膜,以熱轉印方式 側,以形成負型光阻層8。覆:;極ί;之有陰極導電層-以小於Μ爪以下為佳’且避贺塗奈米碳管之膜層厚度 四周有非必要之夺f# &免疋結後形成之電子發射源層 阻層厚度以大於:〇Ϊ:上V?附著,因此所形成之負型光 10私m以上也非無所限制為;,然雖光阻層厚度至少大於 鏤空區域72内之所啥爸太丄主層過厚由於遮蔽效應將致使 面積與厚度將被限制^ ί碳管之電子發射源層43之區域 層80製作為蔭罩阻„ t者以微影製程將所謂的負型光阻 所謂的鏤空區域72阳二供::極導電層42上圖騰化形成 區域,接著以喷塗方:;ΐ米^喷塗液塗覆之 70表面形成奈米唆管#,、= 塗液於^阻隔層 件,可以-種高溫心或曰ίΐ:燒結,適當調整燒結條 氧化或汽化移•,二下口賸結,俾使陰罩阻隔層70 電子發射射源層43’。、 " 之鏤空區域72内之圖騰化 為闡述本發明之一種奈米 子發射源層,本發明以 =之圖騰形成方法製作電 用已製作陰極導電 ^表述具體實施例;一、選 層42之陰極(破璃)基板半成品為被實施Both electron generation efficiency and uniformity are high. Please refer to the third figure to the fourth «tube totem formation method to make the ancient:: Kim shows the implementation of the present invention, the nano-blocking polymer polyacetate negative light totemization electron emission source layer; the selection of the cathode conductive layer - (4) The 匕:: method is applied to the cathode substrate to dry the photoresist dry-type resist dry film on the side of the thermal transfer method to form the negative-type photoresist layer 8. Cover:; extremely; there is a cathodic conductive layer - preferably less than the lower jaws and avoiding the thickness of the coating of the carbon nanotubes around the non-essential f# & electron-emitting source formed after the knot The thickness of the layer resist layer is greater than: 〇Ϊ: upper V?, so the formed negative light 10 is not limited to more than 100 m; however, although the thickness of the photoresist layer is at least greater than that of the dashed area 72 Too thick the main layer of the solar layer will cause the area and thickness to be limited due to the shadowing effect. The area layer 80 of the electron emission source layer 43 of the carbon tube is made into a shadow mask. The so-called negative type photoresist is used in the lithography process. The so-called hollow area 72: the second supply: the toluene formation area on the pole conductive layer 42, and then the surface of the 70 coated with the spray coating: ΐ米^ spray coating forms the nano tube#, = = coating liquid ^ Barrier layer, can be a kind of high temperature heart or 曰 ΐ ΐ: sintering, appropriate adjustment of the sintering strip oxidation or vaporization shift, two lower mouth remaining knot, 俾 make the shadow mask barrier layer 70 electron emission source layer 43'. The totem in the hollow region 72 is a nano-particle source layer for illustrating the present invention. Produced by a method of forming electrically conductive cathode ^ DETAILED has produced a representation example embodiments; a cathode (broken glass) layer 42 of the substrate is selected from semi-finished products to be implemented

1252562 五 、發明說明(9) ' " ------ 所 膜 之 對象,並設計於陰極導電層4 2上制a „平方面積之電子發射源層43,各^^複數個2仏m X 2仏 係保持咖m,參考第七圖所示讀電T發射…間隙 出品之ORDYL BF系列之高分子取―、遠用一種東厅、應化 層厚度可為m,以熱轉印貼V曰乾膜負型光阻/料, 合微影製程所需之曝光條件將, 覆u离基板保持於5(rc為佳,隨後進行曝光,曝光 s # /± 口腸化I冤子發射源層圖騰區域暗影化 ί ί*找;2可、J光區域之負型光阻層被保留,而未曝光鏤 除,形成所謂之座罩阻隔層7〇,以 曝光’曝光後以碳酸納水溶液進行顯 電層上来赤一、塗之電子發射源層區域被鏤空,於陰極導 於:板ί夕二鏤空區域72,接著將該基板以稀鹽酸將殘留 板上i ϊ酸鈉溶液進行中和後再施以簡單乾燥培烤基 鏤空區域72 ’冑此可製作出複數個2〇"m x 2〇"m之 塗i〇i 太二、接著進行喷塗奈米碳管程序,以反覆喷 太==米碳管噴塗液,以形成奈米碳管層;四、將 去土不^石厌官後之陰極(玻璃)基板進行高溫燒結,調節適 二ΐ ϊ溫與溫度分佈調整,並調節燒結過程之供應氣體, 又# I明係於燒結過程4〇〇〇c以下通入空氣〇. 2Μ⑽以充 二,,隆罩阻隔層7 2,4 0 0°C以上漸漸減少空氣之提供改 電::保π碳…質’並且俾使奈米碳管固著 水、电層上,此外於此高溫過層可藉由高溫爐内之氣體 L動以移除氧化蔭罩阻隔層7 2之氧化物及非陰極電子發射1252562 V. Inventive Note (9) ' " ------ The object of the film, and designed on the cathode conductive layer 4 2 to make a „ square area of the electron emission source layer 43, each ^ ^ 2 m X 2仏 keeps the coffee m, refer to the seventh figure to read the electric T emission... The ORDYL BF series of the polymer produced by the gap is taken, and the east side, the thickness of the chemical layer can be m, with thermal transfer V 曰 dry film negative photoresist / material, the exposure conditions required for the lithography process will be, the substrate is kept at 5 (rc is better, followed by exposure, exposure s # / ± mouth intestinal I 冤The source layer totem area is shadowed ί ί * find; 2, J light area of the negative resist layer is retained, and not exposed to remove, forming a so-called seat cover barrier layer 7 〇, after exposure 'exposure to carbonic acid The nano-aqueous solution is applied to the electro-sensing layer to the red layer, and the coated electron-emitting source layer region is hollowed out, and the cathode is guided at: the plate 夕 镂 镂 hollow region 72, and then the substrate is treated with dilute hydrochloric acid on the residual plate of sodium citrate solution. After neutralization, apply a simple dry bake-out hollow area 72 '胄 This can make a number of 2 〇"mx 2〇"m i too, followed by spraying the carbon nanotube program to repeatedly spray the spray == m carbon tube spray to form the carbon nanotube layer; fourth, the cathode (glass) after the soil is not stone The substrate is subjected to high-temperature sintering, adjusting the temperature and temperature distribution of the appropriate enthalpy, and adjusting the supply gas of the sintering process, and #I Ming system is introduced into the air 〇 below the 4烧结c in the sintering process. 2Μ(10)以充二,,隆The cover barrier layer 7 2,400 °C or more gradually reduces the supply of air to change the electricity:: π π carbon ... quality 'and the carbon nanotubes are fixed on the water, the electric layer, in addition to the high temperature layer can be borrowed The gas L in the high temperature furnace is moved to remove the oxide and non-cathode electron emission of the oxide mask barrier layer 7 2

第14頁 i^2562 五、^Ϊ^(1〇) — 〜s - 射源I或内之奈米碳管。依本製程之製作奈米碳管電子發 電=曰各該結構可維持約1 8// m x丨8// m之複數個圖騰, 射毛射源層之厚度可為約1〜2// m,各該奈米碳管電子發 ,之間仍有部分區域殘留少許氧化蔭罩阻隔層,不過 以簡單溶劑溶解清除,不會影響所製作之覆數高解析圖 耦之奈米妷官電子發射源層之品質,依本發明所製作之陰 :板電子產生特性,其起始電場2_lv/// m(電流密度〇.5// /cm2),電場3· 0 V/// m以上電流密度即可超越1〇mA/cm2。Page 14 i^2562 V.^Ϊ^(1〇) — ~s - Source I or inner carbon nanotubes. According to the process of the production of carbon nanotubes electronic power generation = 曰 each of the structure can maintain a plurality of totems of about 18 / / mx 丨 8 / / m, the thickness of the hair-shooting source layer can be about 1 ~ 2 / / m Each of the carbon nanotubes emits electrons, and there is still a part of the oxidation mask barrier layer remaining in some areas, but it is dissolved and removed by a simple solvent, and does not affect the fabricated high resolution image coupled with the nanoelectronic emission. The quality of the source layer, according to the invention: the electron generation characteristics of the cathode: the initial electric field is 2_lv///m (current density 〇.5//cm2), and the electric field is more than 3. 0 V///m. The density can exceed 1 〇 mA / cm 2 .

在此須對本發明之方法做一總整理之敘述,本發明包 含以下步驟:(1)於陰極基板含陰極導電層之一側塗佈一 負型光阻層,可為含高分子聚醋;(2)以曝光顯影製程造 成電子發射源層之鏤空區域72以製作蔭罩阻隔層7〇; (3) 喷塗奈米奴官噴塗溶液,俾使奈米碳管6 2填充沾附於鏤空 區域72内,以成為初始之電子發射源層;及(4)以高溫燒 結或真,燒結移除蔭罩阻隔層70及附著於其上之非有效之 奈米碳管,並在此燒結過程使該鏤空區域内之奈米碳管層 固著於陰極導電層上,以形成電子發射源層43。Herein, the method of the present invention needs to be summarized. The present invention comprises the following steps: (1) coating a negative-type photoresist layer on one side of the cathode substrate containing the cathode conductive layer, which may be a polymer-containing polyacetate; (2) forming a shadow mask layer 7 by the exposure and development process to form a shadow mask layer 7 of the electron emission source layer; (3) spraying the nano slave spray solution, so that the carbon nanotube 6 2 is filled and attached to the hollow In the region 72, to become the initial electron emission source layer; and (4) to remove the shadow mask barrier layer 70 and the non-effective carbon nanotubes attached thereto by high temperature sintering or true sintering, and in the sintering process The carbon nanotube layer in the hollow region is fixed on the cathode conductive layer to form the electron emission source layer 43.

有鑑於本發明之諸多變化應加以詳細敘述,將有以下 之說明:其中該負型光阻層可為高分子聚醋負型光阻層且 係可以旋轉塗佈(spin coating)或熱轉印(laminate)方式 塗設於陰極之上;且其中該負型光阻層可為高分子聚酯負 型光阻層係可包含聚乙烯醇與重鉻酸鹽類;又其中該奈米 碳管喷塗溶液可包含固著劑,使得該奈米碳管藉由固著劑 連接於一電子裝置之陰極構造噴塗表面,及可有分散劑,In view of the many changes of the present invention, it will be described in detail, wherein the negative photoresist layer may be a high molecular polyacrylate negative resist layer and may be spin coating or thermal transfer. Laminated on the cathode; and wherein the negative photoresist layer can be a high molecular polyester, the negative photoresist layer can comprise polyvinyl alcohol and dichromate; and wherein the carbon nanotube The spraying solution may comprise a fixing agent, such that the carbon nanotube is connected to the cathode of the electronic device by a fixing agent, and the dispersing agent may be disposed.

1252562 五、發明說明(11) 以適當之分散噴塗溶液内之各該粉體材料;進一步詳細指 定其中之條件時,該奈米碳管喷塗溶液可包含銀粉、銦鹽 類或氧化銦錫之粉體,且該固著劑可為玻璃粉或硝化棉; 為求顯影及燒結之一般需求,其中該高分子聚酯負型光阻 層膜層厚度可為1 〇# m到30// m之間;而為求製程之方便及 噴塗效果,其中該喷塗奈米碳管噴塗溶液喷塗後形成之膜 成厚度可為8// m-ο· 5 // m之間;而其中該燒結過程中於 = 〇°c以下可通入空氣〇.卜0 3 Mpa,以充分氧化藤罩阻隔 2結=於4〇〇t: -50(rc漸漸減少空氣之提供改以氮氣充入 藉以上之詳細揭示驗證,本發明之優點如下; 1 ·依本發明可將喷塗奈米碳管之喷塗’ 解析圖騰化之電子發射源層之製作。 打貝她於雨 ^依本發明所製作之高解析奈米碳管電 管電子路Γ 作仍可保留原噴塗技術製作之大丰山 更多,大大提升電=產m露土電子發射源之表面 子發射源層厚度亦較=有利於電流密度之提升,電 3 ·依本發明製作之雷子 / 阻隔層實施枯 尸 X射源層,微影圖騰化氏罢 二靶技術成熱簡易,喷塗 騰化蔭罩 易;:塗佈用料,,可實施於商業應用塗洛液備製簡 拘限本發發明之較佳可行實施例,非因㈣ 内容所:t 觀圍’故舉凡應用本發明說明:即 ·"、之等效結構變化,均同理皆包含於曰及圖式 、奐明之範圍1252562 V. INSTRUCTIONS (11) Dispersing the powder materials in the spray solution appropriately; when specifying the conditions in detail, the carbon nanotube spray solution may comprise silver powder, indium salt or indium tin oxide. Powder, and the fixing agent may be glass powder or nitrocellulose; in order to meet the general requirements of development and sintering, the thickness of the polymer polyester negative photoresist layer may be 1 〇# m to 30// m. In order to facilitate the process and the spraying effect, the film formed by spraying the sprayed carbon nanotube spray solution may have a thickness of 8//m-ο· 5 // m; During the sintering process, air 〇 can be passed below = 〇 °c. Bu 0 3 Mpa, to fully oxidize the vine cover barrier 2 knot = at 4 〇〇 t: -50 (rc gradually reduce the supply of air to change the nitrogen to borrow The above detailed disclosure proves that the advantages of the present invention are as follows: 1 . According to the invention, the sprayed nanocarbon tube can be sprayed with 'analytical totemized electron emission source layer'. The shellfish is in the rain ^ according to the invention The high-resolution carbon nanotube electric tube electronic circuit made can still retain the Dafeng Mountain made by the original spraying technology. More, greatly improve the thickness of the surface of the electron emission source of the electron emission source, and the thickness of the surface emission source layer is also favorable for the increase of the current density, and the implementation of the scorpion X-ray layer of the ray/barrier layer produced according to the present invention. , lithography Totem Huashi two target technology into a simple heat, spray Tenghua shadow mask easy;: coating materials, can be implemented in commercial applications Tuluo liquid preparation system is limited to the limit of the invention For example, the reason for (4) content: t Guanwei's description of the application of the invention: that is, the equivalent structure changes, are all included in the scope of 曰 and schema, 奂明

1252562 五、發明說明(12) 内,以保障發明者之權益,於此陳明。1252562 V. In the description of the invention (12), to protect the rights and interests of the inventors, Chen Ming.

iim 第17頁 1252562 圖式簡單說明 第 — 圖 為 場 發 射 顯 示 元 件結 構 示 意 圖 5 第 二 圖 為 習 知 網 印 技 術 之電 子 發 射 層 結 構 示 意 圖, 第 圖 為 本 發 明 塗 佈 光 阻層 步 驟 示 意 圖 第 四 圖 為 本 發 明 曝 光 顯 影製 程 步 驟 示 意 圖 第 五 圖 為 本 發 明 喷 塗 奈 米$反 管 喷 塗 溶 液 步 驟 示 意圖, 第 六 圖 為 本 發 明 奈 米 碳 管之 圖 騰 形 成 構 造 示 意 圖;及 第 七 圖 為 本 發 明 奈 米 碳 管之 圖 騰 形 成 上 視 示 意 圖。 [ 元 件 符 號 說 明 ] 場 發 射 顯 示 器 1 a 陽 極 3 a 陽 極 玻 璃 基 板 31a 陽 極 導 電 層 32a 螢 光 粉 體 層 3 3 3 陰 極 4a 陰 極 玻 璃 基 板 41a 陰 極 導 電 層 42a 電 子 發 射 源 層 43a 單 元 結 構 5 a 單 元 陽 極 51a 單 元 陰 極 5 2a 阻 隔 壁 5 3a 陰 極 基 板 41 陰 極 導 電 層 42 電 子 發 射 源 層 43 電 子 發 射 源 層 60 固 著 劑 或 導 電 材 料 61 奈 米 石炭 管 62 蔭 罩 阻 隔 層 70 鏤 空 區 域 72Iim Page 17 1252562 Brief Description of the Drawings - The picture shows the structure of the field emission display element. The second figure shows the structure of the electron emission layer of the conventional screen printing technology. The figure is the fourth step of the step of coating the photoresist layer of the present invention. The figure is a schematic view of the steps of the exposure and development process of the present invention. The fifth figure is a schematic diagram of the steps of the sprayed nanometer anti-tube spraying solution of the present invention, and the sixth figure is a schematic diagram of the totem forming structure of the carbon nanotube of the present invention; The totem of the invention of the carbon nanotubes is formed as a top view. [Description of component symbols] Field emission display 1 a Anode 3 a Anode glass substrate 31a Anode conductive layer 32a Phosphor powder layer 3 3 3 Cathode 4a Cathode glass substrate 41a Cathode conductive layer 42a Electron emission source layer 43a Unit structure 5 a Unit anode 51a unit cathode 5 2a barrier wall 5 3a cathode substrate 41 cathode conductive layer 42 electron emission source layer 43 electron emission source layer 60 fixing agent or conductive material 61 nano carbon tube 62 shadow mask barrier layer 70 hollow region 72

第18頁Page 18

Claims (1)

1252562 六、申請專利範圍 1、 一種奈米碳管之圖騰形成方法,係用於具顯示功 能之電子裝置,包括有下列步驟: (1)於陰極基板含陰極導電層之一侧塗佈一負型光阻 層; (2 )以曝光顯影製程造成電子發射源層之鏤空區域以 製作蔭罩阻隔層; (3 )喷塗奈米碳管喷塗溶液,俾使奈米碳管填充沾附 於鏤空區域内,以成為初始之電子發射源層;及 (4 )以高溫燒結或真空燒結移除蔭罩阻隔層及附著於 其上之非有效之奈米碳管,並在此燒結過程使該鏤空區域 内之奈米碳管層固著於陰極導電層上,以形成電子發射源 層。 2、 如申請專利範圍第1項所述之奈米碳管之圖騰形成 方法,其中該負型光阻層為高分子聚酯負型光阻層且係以 旋轉塗佈(spin coating)或熱轉印(laminate)方式塗設於 陰極之上。 3、 如申請專利範圍第1項所述之奈米碳管之圖騰形成 方法,其中該負型光阻層為高分子聚酯負型光阻層且係包 含聚乙烯醇與重鉻酸鹽類。 4、 如申請專利範圍第1項所述之奈米碳管之圖騰形成 方法,其中該奈米碳管喷塗溶液包含固著劑,使得該奈米 碳管藉由固著劑連接於一電子裝置之陰極構造喷塗表面, 及分散劑,以適當之分散喷塗溶液内之各該粉體材料。 5、 如申請專利範圍第4項所述之奈米碳管之圖騰形成1252562 VI. Patent application scope 1. A method for forming a totem of a carbon nanotube, which is used for an electronic device having a display function, comprising the following steps: (1) coating a negative side of a cathode substrate with a cathode conductive layer (2) forming a shadow mask barrier layer by exposing the development process to the hollow region of the electron emission source layer; (3) spraying the carbon nanotube spraying solution, so that the carbon nanotube filling is adhered to In the hollow region, to become the initial electron emission source layer; and (4) removing the shadow mask barrier layer and the non-effective carbon nanotubes attached thereto by high temperature sintering or vacuum sintering, and in the sintering process The carbon nanotube layer in the hollow region is fixed on the cathode conductive layer to form an electron emission source layer. 2. The method for forming a tonnage of a carbon nanotube according to claim 1, wherein the negative photoresist layer is a high molecular polyester negative photoresist layer and is spin coated or hot. A laminate is applied over the cathode. 3. The method for forming a tonnage of a carbon nanotube according to claim 1, wherein the negative photoresist layer is a high molecular polyester negative photoresist layer and comprises polyvinyl alcohol and dichromate. . 4. The method for forming a tonnage of a carbon nanotube according to claim 1, wherein the carbon nanotube spraying solution comprises a fixing agent, so that the carbon nanotube is connected to an electron by a fixing agent. The cathode of the device is constructed with a sprayed surface, and a dispersant to properly disperse each of the powder materials in the spray solution. 5. The totem formation of the carbon nanotubes as described in item 4 of the patent application scope 第19頁 1252562 六、申請專利範圍 方法,其中該奈米碳管喷塗溶液包含銀粉、銦鹽類或氧化 銦錫之粉體,且該固著劑為玻璃粉或硝化棉。 6、 如申請專利範圍第1項所述之奈米碳管之圖騰形成 方法,其中該負型光阻層為高分子聚酯負型光阻層且膜層 厚度為1 0 // m到3 0 // m之間。 7、 如申請專利範圍第1項所述之奈米碳管之圖騰形成 方法,其中該喷塗奈米碳管喷塗溶液喷塗後形成之膜成厚 度為8// m-0.5 // m之間。 8、 如申請專利範圍第1項所述之奈米碳管之圖騰形成Page 19 1252562 VI. Patent Application The method, wherein the carbon nanotube spraying solution comprises a powder of silver powder, indium salt or indium tin oxide, and the fixing agent is glass powder or nitrocellulose. 6. The method for forming a tonnage of a carbon nanotube according to claim 1, wherein the negative photoresist layer is a high molecular polyester negative photoresist layer and the film thickness is 10 // m to 3 0 // m between. 7. The method for forming a tonnage of a carbon nanotube according to claim 1, wherein the film formed by spraying the sprayed carbon nanotube spray solution has a thickness of 8//m-0.5 // m between. 8. The totem formation of the carbon nanotubes as described in item 1 of the patent application scope 方法,其中該燒結過程中於4 0 0°C以下通入空氣〇. 1 - 〇 · 3 Mpa,以充分氧化蔭罩阻隔層,而於4 0 0°C -50(TC漸漸減少 空氣之提供改以氮氣充入燒結室。The method, wherein the sintering process is carried out at a temperature below 400 ° C, air 〇 1 - 〇 · 3 Mpa, to fully oxidize the shadow mask barrier layer, and at 40 ° C -50 (TC gradually reduces the supply of air Change to nitrogen into the sintering chamber. 第20頁Page 20
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