200939471200939471
七、指定代表圖： (一） 本案指定代表圖為：第（4)圖。 (二) 本代表圖之元件符號簡單說明： 200高摻雜矽基板 202b場氧化層 203b淡摻雜保護帶擴散區 205a基擴散區 206a高摻雜射擴散區 207b較薄氧化層 208b基接觸窗口 209b基接觸電極 201淡摻雜磊晶矽層 202c隔離場氧化層 204b較厚氧化層 205b中度摻雜保護帶擴散區 206b中度摻雜射擴散區 208a射接觸窗口 209a射接觸電極 八、^案若有化學式時，耐賴神日月特徵的化學式 九、發明說明： 【發明所屬之技術領域】 ❹ 本發明與一般的一種半導元件及 與一種雙載子接面電晶體元件及其製造有關，尤其是 【先前技術】 一個雙載子接面電晶體(BJT)元件 區、-個射擴散區和-個集半導體區係 匕=個基擴散 體元件係常作為一個線性功率 200939471 放大器。以-個積體電路内部組件的形式而言，上述 ΪΞΞΪί體元件係常用於—種高頻線性積體電路、一種混 口積體電路和-種功率積魏路之内。基本上，—個 的)參數均專注於電流增益⑹、射-集極 Γί，1，〇>射·集極漏筒Ice〇)和最高集極電流(ic，） 其中上述之電化增益⑹和該射_集極崩潰 ϋ， =集;=會產生大幅下降並成為低失真音 ❹ ❹ ίΐϊ二 點。—般習知，上述之電流增益下降主要 由^物理效應所造成，諸如：基區導電調變細⑽她c modula^n)、射區擁塞(emitter cr〇w(Jing) * 基 = 广皆為了改善上述射區擁塞效應 以 mterdigitated)基_射區佈局係用來增加周邊對面1 (periphery-to_area ratio)。 谓 ϋ 圖- Α揭錢前技術之—種簡單交 曰 體:個剖面圖’其中-個卩_型基紐區 一個次掺雜蠢晶η_型石夕層1〇1的一個表 石 晶η挪層1〇1係形成於一個高摻雜η_型石夕基板 型射擴散區1G6a係形成於該&型基擴散區_ L = —個射接觸電極斷係透過被一個較薄氧 化層1〇5戶斤包_一個射接觸窗口 與該高推雜二= 散區106a的-個頂部表面部份接觸且與置於一個場化戶 ，未顯之上的一個射極焊線塾(未顯連接；一個^接^ ，極108b係透過被—她厚氧化層1G4所包_ ^ 夫，的一個頂部表面部份』 該減化層102a(未顯示)之上的一佩極銲線塾(未顯 而雷是’如®— A所示的一個傳統雙載子接 面電曰曰體70件需要四個面罩步驟來製造’其中一個第=罩步 5 200939471 驟係用來打開形成上述之ρ_型基擴散區1〇3a的一個基擴散窗 =-個第二面罩步驟制來打卿成上述之高雜n_型麵 f^1〇6a^需的—個射擴散窗口 ；—個第三面罩步驟係用來 丁幵。亥p-型土擴政區103a和該高摻雜n_型射擴散區1〇6a之上 =觸窗口 107b和l〇7a;以及一個第四面罩步驟係用來成形 述之射制f極驗、該基接觸電極麵和其銲線塾(未顯 不）〇 ❹ Ο 目，Λ明顯ί，若上述之射接觸電極驗时指數目是η個， 則—上述之基接觸電極祕的手指數目必然是㈣個 Γ^，3,4—H且成一個高電流功率雙載子接面電晶體元 1 里可以 > 月楚地看到’上述之交叉式電極結構的基展開電 ^ =se spreading resistance)將變小且上述之射區擁塞效應 ffJ Μ降低。 體元先^技術之該簡單交叉式互雙載子接面電晶 =件具有-個較^射接面時的一個剖面圖。這裡可以清楚地 u:位於上述之高掺雜n_型射擴散區嶋之下的π型基接 移動並藉由-種射推移_(emitt ^ it的’然而接近該高摻雜&型射擴散1 ^寬度⑽，)將變薄。結果，集極電流將被迫 寬度點絲容易地在該較薄基區寬度點發生 土 &抵穿朋 ^(base punch-thr h br 。 益 提# -個# 駐要目祕藉㈣除上叙獅移效絲 時具有一個較高的電流增 本發明的另一個目的係提供一種雙載子接面電晶體結構 6 200939471 藉由更進一步降低上述之基展開電阻來降低上述之射區擁塞 效應對電流增益下降的影響。 士發明的一個重要目的係在不增加製造面罩步驟下提供 一個雙載子接面電晶體結構。 【發明内容】 e ❹ 本發明揭示-種轉體元件及其製造方法^本發明之一個 半導體耕至少包含—種第—導電型的一個半 屏开^ Ί上述之半導體基板至少包含—個淡摻雜蟲晶石夕 摻雜德板之上；—種第二導電型的一個保護 =擴=域於該淡掺縣晶料的—個指定表面區内和該 電型的-個基擴散區形成於該淡摻雜蠢晶韻的一個 二中面上S保護帶擴散區所包圍和連 深帶擴散接面深度係比該基擴散區來的 二二心、導電里的一個射擴散區形成於該基擴散區的一個指 ΐίϋίί内；—個基接觸電極透過—個基接觸窗口形成於 帶侃_-她定頂部表面之上；以及—個射 透過-個射接觸窗口形成於該射擴散區的—個頂部 上二上述之第二導電型的該保護帶紐區更進一步至 二固淡摻雜保護帶擴散區的 述之第-導電型的該射擴散區更進—步至少包含第――内ϋ 區形成於-個中度摻雜射擴散區的—個表面== 面接觸來組成本發明的一個第三内涵。 扣疋頂邛表 【實施方式】 200939471 現請參見圖二a至靥- 涵的-種基本半導體;’二中揭示製造本發明之第 圖二A顯t—其簡要剖面圓。 的一個半導體基板·2⑻之成於-種第-導電型 ^形成於—個高摻_基板⑽雜μ晶石夕層201 好具有介於6,〇〇〇埃和3〇 〇〇 上述之場乳化層202最 雜蟲晶發層2〇1最好具有介於5^的^個厚度。上述之淡摻 靖立方公分和，:立:厚 微米之間的—個厚度且具有介於m=35(^。米和_ 間的—個高摻雜濃度。這裡值得注魚的A:刀和10 Vj方公 值的一_部^麵ϋΓ晶騎淑具有高電阻係數 晶石夕層來降低—種高崩、貴電壓、有，電阻係數值的—個底部蟲 上且藉由一個笛一 未颂不)形成於該場氧化層202之 ()之娜護成位於_樣化第一光阻層 化層圖2ΓΛϊ^，化第―_㈣⑽的該場氧 散窗口，缺容液加予去除來形成該保護帶擴 電漿來加予I除。圖樣光阻層(_藉由熱硫酸溶液或氧 由-不第二導電型的一個保護帶擴散 區203a藉 幵製程或料佈植方法透過該髓擴散窗口 晶，2〇1的一個指定表面部份之内且一 在-饱古、wt私制係藉由一個氧氣的環境或一個水蒸氣環境 2程下形成於該保護帶擴散窗口之上。上述 2 最好具#姨綱埃和漏埃之間的一 又。圖一 C並顯示一個第二光阻層(PR2)係(未顯示)形成 200939471 於該場氧化層2G2a/2G2b和該較厚氧化層204a之上且加予圖 $來形成介於關樣化第二光阻層_)之_—個基擴散 圖二D顯示介於該圖樣化第二光阻層_)之間的該場氣 化層202a係利用緩衝氫氟酸溶液來加予去除，然後該圖樣化 光阻層趣)_賴硫酸溶液或氧f絲加^去除以形成一 個基/射擴散窗口。VII. Designated representative map: (1) The representative representative of the case is: (4). (b) The symbol of the representative figure is simply described: 200 high doped germanium substrate 202b field oxide layer 203b lightly doped guard band diffusion region 205a base diffusion region 206a high doping emitter diffusion region 207b thin oxide layer 208b base contact window 209b-based contact electrode 201 lightly doped epitaxial layer 202c isolated field oxide layer 204b thicker oxide layer 205b moderately doped guard band diffusion region 206b moderately doped emitter diffusion region 208a emitter contact window 209a emitter contact electrode 八, ^ In the case of a chemical formula, the chemical formula of the characteristics of the sun and the moon is ninth, and the invention is as follows: [Technical field of the invention] ❹ The invention and a general semi-conductive element and a bi-carrier junction transistor element and the manufacture thereof Related, especially [Prior Art] A bipolar junction transistor (BJT) device region, a single emitter diffusion region, and a set semiconductor region system = a base diffuser component are often used as a linear power 200939471 amplifier. In the form of internal components of an integrated circuit, the above-mentioned components are commonly used in a high-frequency linear integrated circuit, a mixed-integrated circuit, and a power product. Basically, the parameters are all focused on current gain (6), emitter-collector ,, 1, 〇 > shot collector collector Ic〇) and highest collector current (ic,) where the above electrochemical gain (6) And the shot_collective collapse ϋ, = set; = will produce a sharp drop and become a low distortion sound ❹ ΐϊ ΐϊ ΐϊ two points. As is known, the above-mentioned current gain reduction is mainly caused by the physical effect, such as: the base area is finely tuned (10) her c modula^n), the area is congested (emitter cr〇w (Jing) * base = broad In order to improve the above-mentioned shot congestion effect, the mterdigitated base-emitter layout is used to increase the peripheral-to-area ratio. ϋ ϋ 图 - Α Α 钱 钱 — — — — — — 种 种 种 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : The n-nor layer 1〇1 is formed in a highly doped n-type shi-type substrate-type radiation diffusion region 1G6a is formed in the & type-based diffusion region _ L = - a single contact electrode is broken through a thin oxide Layer 1 〇 5 斤 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ (not connected; one ^, ^ 108b is a top surface portion of the thickened layer 1G4 by her thick oxide layer 1G4.) A soldering layer on the reduced layer 102a (not shown)塾 (not shown to be a traditional double-carrier junction 曰曰 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 Forming a base diffusion window of the above-mentioned ρ_ type base diffusion region 1〇3a=-a second mask step is performed to strike the above-mentioned high-missing n_type surface f^1〇6a^-----spray diffusion a third mask step is used for Ding Hao. Hai p-type soil expansion area 103a and the highly doped n_ type radiation diffusion area 1〇6a = touch windows 107b and l7a; The fourth mask step is used to form the test shot, the base contact electrode surface and the bond wire (not shown), and the number of the contact electrodes is the same. Is n, then - the number of fingers of the above-mentioned base contact electrode must be (four) Γ ^, 3, 4 - H and into a high current power double carrier junction transistor 1 can be > The above-mentioned cross-electrode structure of the above-mentioned cross-electrode structure will become smaller and the above-mentioned emitter congestion effect ffJ Μ will be reduced. The simple cross-over mutual bi-carrier junction electro-crystal = a cross-sectional view of the member having a relatively shallow junction surface. Here, it can be clearly seen that the π-type base connection located below the highly doped n_type radiation diffusion region 并 is moved by the seeding _(emitt ^ it's 'close to the high doping & type-spreading diffusion 1 ^width (10),) will be thinned. As a result, the collector current will be forced to width The silk easily occurs at the point of the width of the thinner base zone. (base punch-thr h br. 益提# -## 目目目借 (4) In addition to the lion shifting effect wire, there is a comparison High Current Enhancement Another object of the present invention is to provide a bi-carrier junction transistor structure 6 200939471 which reduces the effect of the above-described emitter congestion effect on current gain reduction by further reducing the above-described base expansion resistance. An important goal is to provide a bi-carrier junction transistor structure without the need to add a mask. SUMMARY OF THE INVENTION The present invention discloses a semiconductor device and a method for fabricating the same. The semiconductor substrate of the present invention comprises at least one type of first conductivity type, and the semiconductor substrate comprises at least one lightly doped a worm crystal is superimposed on the German plate; a protection of the second conductivity type = expansion domain is formed in a specified surface region of the light-doped crystal material and a base diffusion region of the electrical type The depth of the diffusion band of the S-protection zone and the depth of the diffusion zone of the deep band are formed on a two-middle surface of the light-doped stupid crystal, and the depth of the diffusion zone is formed by a dichroic and conductive diffusion region of the base diffusion region. a base contact electrode is formed through the base contact window on the top surface of the tape ;--the top surface thereof; and a ray-transmitting contact window is formed in the radiation diffusion region The protective band region of the second conductivity type of the above two upper portions further extends to the first conductivity type of the diffusion region of the second conductivity type doping protection band diffusion region. ―Inner ϋ zone is formed in a moderately doped radiation diffusion zone A surface == surface contact to form a third connotation of the present invention.疋 疋 【 【 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 A semiconductor substrate · 2 (8) is formed in a kind of - conductivity type ^ formed on a highly doped substrate (10) hetero-microcrystalline layer 201 has a field of 6, 〇〇〇 and 3 〇〇〇 The most insect crystal layer 2〇1 of the emulsified layer 202 preferably has a thickness of 5^. The above-mentioned lightly blended Jingcubic centimeter and:: stand: thickness between thick micrometers and having a high doping concentration between m=35 (^.m and _. And a 10 Vj square value of a _ part of the surface of the crystal 骑 骑 具有 has a high resistivity crystal slab layer to reduce - a kind of high collapse, expensive voltage, there, the value of the resistance coefficient - a bottom worm and with a flute The first layer of the oxide layer 202 is formed in the field of the first photoresist layer. The protective tape is removed to form a protective tape to add I to remove. The patterned photoresist layer (by a hot sulfuric acid solution or oxygen by a non-second conductivity type of a guard band diffusion region 203a by a process or a material implantation method through the myelin diffusion window crystal, a specified surface portion of 2〇1 Within the share, the full-scale, wt private system is formed on the diffusion window of the protective tape by an oxygen environment or a water vapor environment. The above 2 preferably have #姨纲埃和漏埃Figure 1C shows a second photoresist layer (PR2) system (not shown) forming 200939471 on the field oxide layer 2G2a/2G2b and the thicker oxide layer 204a and adding the graph $ Forming the second photoresist layer _), the base diffusion diagram 2D shows that the field gasification layer 202a between the patterned second photoresist layer _) utilizes buffered hydrofluoric acid The solution is added for removal, and then the patterned photoresist layer is removed) to remove a sulfuric acid solution or an oxygen f-filament to form a base/projection diffusion window.
圖一 E顯不該第二導電獅一個基擴散區如化係藉由離 子，植或-種傳統熱擴散製程且在—個氮氣的環境下進行一 人製程來形成。經由上述之高溫驅人製程來形成該基 巧區205a之後，該第一導電型的一個射擴散區施係藉由 離子，植或:個傳統熱擴散製程來形成並在―個氧氣的環境 下進，二個高溫驅入製程來形成一個較薄氧化層2〇7a。上述 之較薄氧化層207a的厚度係介於細埃和2，_埃之間，而 上述之射擴舰2G6a至少包含-個高摻轉織區。這裡可 以清楚地看到，上述之射擴倾施a和該基擴㈣孤係利 用相^的紐t擴散窗^並以-種自麟準的方絲形成。另 外，這裡可以清楚地觀察到，上述之保護帶擴散區2〇3b和該 基擴散區205a係交互連接且上述之保護帶擴散區2〇3b的一個 接面深度係比該基擴散區2〇5a深。 圖二F顯示一個第三光阻層(PR3)係形成(未顯示)於如圖 - E所不的-個頂部表面之上，且藉由—個第三面罩步驟來加 予圖樣化，並在該射擴散區2〇知的一個頂部表面形成一個射 接觸窗n2G8a和在該保護帶擴散區纖的—個頂部表面形成 -個基接觸窗口 2G8b。接著’ _個金屬層2Q9(未顯示)係形成 於上述之頂部表面上城由—個第四面罩步驟(未顯示)來形 成一個射接觸電極209a和一個基接觸電極2〇%並進行一個退 火的製程來完成。上述之金屬層2〇9彳以是藉由一個雜系統 所形成的一個鋁/珍膜或一個鋁/石夕/銅膜。 200939471 或並ί後個"；述之完成的晶圓的背祕背磨至—個適當的厚户 或並將-個背面金屬層(未顯 度 之上。上述之背面金靜可&後的心磨表面 -個鈦/鎳/銀膜 疋一個金膜、一個鈦/鎳/金臈或 根據圖 述如下： F，本發明之第1涵的特徵及伽可以綜合分 ❹ ❹ ⑻Γ内涵提倾—個赌接面深度的-個保護帶 晶體::的擴散區來消除-個雙载子接面電 體元件的射-集極崩潰電壓的3效應對該雙載子接面電晶 面深度的-個保護帶擴 對射區擁塞效應的^载子接面電晶體元件的基展開電阻 帶件之-個較深接面深度的-個保護 圖二A和圖三B分別地顯示接著圖二D之後 圖來組成本㈣之第二_ —圖三D所=若上述 摻=護 中-度^雜保翻散區獅所包圍和連接。相似地， 圖二A並顯不上述之第—導電型的—個高摻雜射擴散區論 10 200939471 係藉由佈植一個高劑量磷離子於該基擴 區ίίίΐ 一個乾氧的環境下 保護_舰廳縣^ 對準的方式來形成。這裡值得一提的是戶 濃度介於1〇16/立方公分和W8/立方公分之f。摻雜代表摻雜質Figure 1 E shows that a basic diffusion zone of the second conductive lion, such as a chemical system, is formed by ion, planting or a conventional thermal diffusion process and performing a one-man process in a nitrogen atmosphere. After the bond region 205a is formed by the above-described high temperature driving process, a first diffusion type of the first conductivity type is formed by ion, implant or a conventional thermal diffusion process and is formed in an oxygen atmosphere. Into, two high temperature drives into the process to form a thin oxide layer 2〇7a. The thickness of the thin oxide layer 207a described above is between fine and 2, angstroms, and the above-mentioned projectile 2G6a contains at least one highly woven region. It can be clearly seen here that the above-described projectile dilatation a and the base extension (4) are formed by a pair of square wires. In addition, it can be clearly observed here that the above-mentioned guard band diffusion region 2〇3b and the base diffusion region 205a are alternately connected and the above-mentioned guard band diffusion region 2〇3b has a junction depth which is greater than the base diffusion region 2〇. 5a deep. Figure 2F shows a third photoresist layer (PR3) formed (not shown) above the top surface as shown in Figure -E, and patterned by a third mask step, and A top contact surface n2G8a is formed on a top surface of the radiation diffusion region 2, and a base contact window 2G8b is formed on a top surface of the protective tape diffusion region. Then, a metal layer 2Q9 (not shown) is formed on the top surface of the above-mentioned top surface by a fourth mask step (not shown) to form a radiation contact electrode 209a and a base contact electrode 2% and perform an annealing. The process is completed. The above metal layer 2〇9彳 is an aluminum/zhen/membrane or an aluminum/shixi/copper film formed by a hetero system. 200939471 or later, the finished wafer is back-grinded to a suitable thick or flat metal layer (not visible above. After the heart-grinding surface - a titanium / nickel / silver film 疋 a gold film, a titanium / nickel / gold 臈 or according to the following diagram: F, the characteristics of the first culvert of the invention and the gamma can be integrated ❹ 8 (8) Γ connotation Lifting - a gambling junction depth - a guard band crystal:: diffusion region to eliminate - the effect of the emitter-collector breakdown voltage of a bi-carrier junction electrical component The depth of the surface - a protective band spreads the interference effect of the emitter area of the carrier surface of the carrier element of the transistor element - a deep junction depth - a protection figure 2A and 3B respectively Then, after FIG. 2D, the figure is composed of the second part of this (4) _ - Figure 3D = if the above-mentioned blending = guarding medium-degree ^ miscellaneous insurance is surrounded and connected by the lion. Similarly, Figure 2A shows the above The first - conductive type - a highly doped radiation diffusion zone theory 10 200939471 by implanting a high dose of phosphorus ions in the base expansion zone ίίίΐ a dry oxygen Under the environment, the protection _Guocheng County ^ is formed by means of alignment. It is worth mentioning that the concentration of the household is between 1〇16/cm ^ 3 and W8/cm ^ 3 . Doping represents the doping.
根據圖三B可以清楚地看到，上述S ❹ ❹ 一導示第三内涵的一個剖面圖，其中上述之第 擴ίϊϊΓ的ti擴散結構206a/206b係形成於上述之基 擴放& 205a的-個表面區之内且上述之射 Γ窗口 _與一個高摻雜射擴散區2°6a的-表面接觸。上述之高-低射擴散結構2〇6a/2〇6 = ，散區206a形成於-個中度摻雜射擴散區 =内可⑽料地透過—個犧牲氧化層(未顯示)先進行一個 織氣的環境下進行—侧外的驅入 1Ϊ3 f ί雜射擴散區2嶋或連續佈植_子和石中 是，上的環境下進行驅入來獲得。這裡值得強調的 疋上述之两-低射擴散結構206a/206b可以增加射極注入效 lfflciency)來增加一個雙載子接面電晶體元件 的電μ增益和射-基極崩潰電壓(Bv_)。 圖五Α和圖五Β分別地顯示具有一個交叉電極結構 J典型雙，子接面: 力率電晶體元件的一個頂視佈局圖和一個 j圖’係用來展示本發明之圖、圖三叫圖四的一個簡 二圖五A所示’ 一個射/基區係被一個隔離場氧化層 2c所0圍且—個倾帶區齡於該隔離場氧化層施和該 層之間；—個射接_口施如―個虛線所標示 糸被該隔離場氧化層202c所包圍且一個交叉式射極電極2〇9a 11 200939471 係與一個較大面積的一個射極銲線塾 ©係置於-健傾2G2e之上，職雜銲線墊 窗口獅如一個虛線所示係介於該tn個基=觸 墊=接，而該基购線蝴係置於1 _化層2G2d之上，如圖五A所示 ^ ί；ϊ^02Γΐί：^ : ί ❹ ❹ 中圖五八之沿著一條Α_Α，線的一個剖面圖，1 :明 =:内!每一個虛線代表圖三Β所示之i ί， 中度摻雜保護擴散區2咖且該 土擴散& 205a内的母一條虛線代表本發明之 的一個高-低射擴散結構2G6a/2G6b的-個中^雜鮮:二 :面==發明的元件結構==== 子接面功率H件的各種不同蚊式佈局結構。 圖六A和圖六B分職顯示本發明之—種並 的一個頂視佈局結構及其剖面圖。、相=，如 曰'、伽/^ ’ 一個射/基區係被一個隔離場氧化層202c所包圍 且-個保護帶區係介於該隔離場氧化層施和該場氧j 之間；-個較大面積的一個射接觸電極職亦作為一^ 射極銲線蝴)係透過-個射接職σ 所 射/基區内的—個小的表面區之上卜 二接觸電極2G9b亦作為—健轉線鋪)係透過—個基接 =口。2_如了個虛線所示係形成於該保護帶區内的一個較 2狐=,上；以，一個較厚氧化層204b 4立於該基接觸窗口 料^係Γ成於該保護帶區之上而一個較薄氧化層207b位 於為射接觸㊣口 208a之外係形成於該射/基區之上。 圖六B顯不圖六A所示之沿著一條A_A,線的一個剖面 12 200939471 圖，其中位於一個保護帶擴散區203b之内的一條虛線是— 中度推雜保護擴散區2〇5b如圖三B所示之本發明的第二内、、 :„立於一個基擴散區205a之内的每一條虛線係忑表: 4明之第二内涵所描述的一個高—低射擴散結構2〇如/2〇此 的一個中度摻雜射擴散區206b。很明顯地，本 可以敝献賴子接㈣晶航件的錄 J據圖五B和圖六B可以清楚地看到，圖五B和圖六b 固面罩步驟係與圖二F、圖三B和_所示的- ❹ 窗口二第第2^步驟係用來形成該保護帶區的一個離子佈植 ί 步驟侧來形成該射/基區的—_子佈植窗 口，第二面罩步驟_來形成—個射 ^ 二四面軍步驟是用來形成—個射接觸Ϊ極 sr的元件結構係與圖-和圖 -個較深保護帶擴散區所包圍么擴散區被 =降低射區擁塞效應和增加射-集極移效 ⑼本發明之第二内涵提供—個中度 一個淡摻雜保護帶擴散區之内來進L牛、f帶擴散區形成於 内涵的射區擁塞效應和基區接觸來1一。步降低本發明之第一 (C)本發明之第三内涵接 ^^电阻 散區之内來更進—步^加本轉散結構形成於該基擴 射-基極崩潰電壓。θ χ之第二内涵的電流增益和 (d)i發明之三_涵可以在不增加製造面罩步驟下輕易地實 僅是及描述，但 冉者，本發明不侷限於所列之細節， 13 200939471 對於熟知此種技術的人亦可 【圖式簡單說明】 簡要:二和圖一Β顯示先前技術之-種半導體元件的兩種As can be clearly seen from FIG. 3B, the above S ❹ ❹ leads to a cross-sectional view of the third intension, wherein the above-mentioned first ti diffusion structure 206a/206b is formed in the above-mentioned base expansion & 205a Within a surface region and the above-described pupil window _ is in contact with a surface of a highly doped emitter diffusion region 2° 6a. The high-low-diffusion structure 2〇6a/2〇6= is formed, and the scattering region 206a is formed in a moderately doped radiation diffusion region=the inner region (10) is transparently transmitted through a sacrificial oxide layer (not shown). In the environment of weaving gas - driving outside the side 1Ϊ3 f ί miscellaneous diffusion zone 2嶋 or continuous planting _ sub and stone are obtained by driving in the upper environment. It is worth emphasizing that the above two-low-emission diffusion structures 206a/206b can increase the emitter injection efficiency to increase the electrical μ gain and the emitter-base breakdown voltage (Bv_) of a bipolar junction transistor component. Figure 5 and Figure 5 respectively show a typical double with a cross-electrode structure J, a sub-surface: a top view of the force-rate transistor element and a diagram of the figure used to show the diagram of the invention, Figure 3 Referred to Figure 4 of Figure 4, a single shot/base is surrounded by an isolation field oxide layer 2c and a tilt zone is applied between the oxide layer of the isolation field and the layer; The emitters are labeled as "broken lines" surrounded by the isolation field oxide layer 202c and a crossed emitter electrode 2〇9a 11 200939471 is attached to a larger area of an emitter bond wire. On the top of the 2G2e, the weld line window lion is shown by a dotted line between the tn base = touch pad = connection, and the base purchase line butterfly is placed on the 1 _ layer 2G2d, As shown in Figure 5A ^ ϊ; ϊ ^02Γΐ ί: ^ : ί ❹ ❹ Figure VIII 八 along a Α Α, a section of the line, 1: Ming =: inside! Each dotted line represents the figure shown in Figure 3 i ί, a moderately doped protective diffusion region 2 and the soil diffusion & 205a in the parent dotted line represents a high-low-diffusion structure 2G of the present invention 6a/2G6b - a medium and a few fresh: two: face = = invented component structure ==== sub-junction power H pieces of various mosquito layout structures. Figure 6A and Figure 6B show a top view layout structure and a cross-sectional view of the present invention. , phase =, such as 曰 ', 伽 / ^ ' a shot / base is surrounded by an isolation field oxide layer 202c and a guard band between the isolation field oxide layer and the field oxygen j; - a larger area of a contact electrode is also used as a ^ emitter wire) through a - shot σ / a small surface area in the base area of the second contact electrode 2G9b As a - turn line shop) through a base = mouth. 2_, as indicated by a broken line, is formed in the protective band region, and a thicker oxide layer 204b 4 is formed in the base contact window to form the protective band region. Above, a thinner oxide layer 207b is formed over the emitter/base region in addition to the emitter contact positive opening 208a. Figure 6B shows a section 12 200939471 along a line A_A along line AA, in which a dashed line within a guard band diffusion zone 203b is - a moderately doped protection diffusion zone 2〇5b The second inner portion of the present invention shown in FIG. 3B, : each of the broken lines in the base diffusion region 205a: a high-low-diffusion structure described in the second connotation of the second embodiment. A moderately doped emitter diffusion region 206b, such as /2. Obviously, it can be clearly seen from Figure 5B and Figure 6B of Figure 5B. Figure 5B And Figure 6b, the solid mask step is shown in Figure 2F, Figure 3B and _ - 窗口 window 2, the second step is used to form an ion implantation step of the guard band to form the shot / _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The diffusion zone surrounded by the deep guard band diffusion zone is reduced by reducing the congestion effect of the emitter and increasing the emitter-collector shift effect. (9) The second connotation of the present invention provides Moderately a lightly doped guard band diffusion region is introduced into the L-bull, f-band diffusion region formed in the connotation of the region congestion effect and the base region contact. The first step (C) of the present invention is lowered. The third connotation is further integrated into the resistance region, the step is added to the base diffusion-base breakdown voltage, the second connotation current gain of θ χ and (d) i invention The three _ culverts can be easily and only described without increasing the manufacturing mask, but the invention is not limited to the details listed, 13 200939471 For those who are familiar with the technology, [simplified description] Brief: 2 and Figure 1 show two types of semiconductor components of the prior art
〇 體元件的製程步圖驟及其^發明之第一内涵的—種半導 體元==^=明之第二内涵的-種半導 圖四揭不本發明之第三内涵的—個簡化别面圖。 圖五A和圖5B分別揭示本發明之一種典型半 件的-個簡要頂視佈局圖和沿著—條a_a,線的—=^ tl 圖六A和圖六B分別揭示本發明之—種典型半 。_ 件的-個簡要頂視怖局圖和沿著一條A_A，線的一個剖面f元 【主要元件符號說明】 100/200局換雜♦基板 102/202b場氧化層 105/207b較薄氧化層 202d/202e氧化層 204b較厚氧化層 103a/103b/205a 基擴散區 206b中度摻雜射擴散區 107b/208b基接觸窗口 108b/209b基接觸電極 PR1圖樣化第一光阻層 101/201淡摻雜磊晶矽層 104/204b較厚氧化層 202c隔離場氧化層 203b淡摻雜保護帶擴散區 205b中度摻雜保護帶擴散區 106a/106b/206a高摻雜射擴^ 107a/208a 射接觸窗口 °°° 108a/209a射接觸電極 PR1第一光阻層 PR2第二光阻層 200939471 1射極銲線墊 EB2_圖樣化第二光阻層 基極焊線塾 、申請專利範圍： 1. 一種半導體元件，至少包含： -導電型的-辨導縣板，其巾上述之 板至九含-個淡摻雜蟲晶石夕層形成於一個高摻雜石夕基板= 〇 種第一導電型的—個保護帶擴散區形成於該曰 矽層的一個指定表面區； /雜磊日日 厚型的—個基擴散區形成於該淡摻雜遙晶石夕 曰，個才曰疋表面區，其中上述之基擴散區係被該 散區所包圍並交互連接； 隻帝擴 表ίΐϊ第一導電型的射擴散區形成於該基擴散區的一部份 及 -鋪接_極_㈣舰的—雜表面接觸； 一錄接觸電極與該保護帶擴散區的-部份表面接觸；以 〇 •個集接觸電極形成於該高摻卿基板的底部表面 之上。 2. 如申請專利範圍帛i項所述之半導體元件，其中上述 帶擴散區的接面深度係比該基擴散區深。 ** 3. 如申請專利範圍第丨項所述之半導體^件，其中上述之保 ^擴散區至少包含-個中度摻雜保護帶擴散區形成於一個淡 f雜保護帶擴舰的-部份表面之内且該基接觸電極係與該 中度摻雜保護帶擴散區的一部份表面接觸。 15The process step of the body element and the first connotation of the invention - the type of semiconductor element ==^=the second connotation of the fourth type of semi-conducting picture four reveals the third connotation of the invention - a simplified face Figure. 5A and 5B respectively disclose a brief top view layout of a typical half piece of the present invention and along the line a_a, the line -=^ tl FIG. 6A and FIG. 6B respectively disclose the present invention. Typical half. _ piece - a brief top view of the horoscope and along a line A_A, a section of the line f element [main component symbol description] 100/200 board change ♦ substrate 102 / 202b field oxide layer 105 / 207b thin oxide layer 202d/202e oxide layer 204b thick oxide layer 103a/103b/205a base diffusion region 206b moderately doped radiation diffusion region 107b/208b base contact window 108b/209b base contact electrode PR1 pattern first photoresist layer 101/201 light Doped epitaxial germanium layer 104/204b thicker oxide layer 202c isolation field oxide layer 203b lightly doped guard band diffusion region 205b moderately doped guard band diffusion region 106a/106b/206a high doping shot expansion ^ 107a/208a shot Contact window ° ° ° 108a / 209a shot contact electrode PR1 first photoresist layer PR2 second photoresist layer 200939471 1 emitter bond pad EB2_ pattern second photoresist layer base bond wire, patent application scope: 1 A semiconductor component comprising: - a conductive type - discriminating plate, wherein the plate of the towel to the nine-containing lightly doped granules is formed on a highly doped stone substrate = first type a conductive type of protective band diffusion region is formed on a specified surface area of the germanium layer; a type of base diffusion region is formed in the lightly doped telecrystalline stone, the surface area of the surface, wherein the above-mentioned base diffusion region is surrounded by the scattered region and is connected to each other; a conductive type of radiation diffusion region is formed in a portion of the base diffusion region and - a surface contact of the - _ pole _ (four) ship; a recording contact electrode is in contact with a surface of the diffusion region of the protection band; • A set of contact electrodes are formed over the bottom surface of the high doped substrate. 2. The semiconductor component according to claim ii, wherein the junction depth of the diffusion region is deeper than the radical diffusion region. ** 3. The semiconductor device according to the scope of claim 2, wherein the above-mentioned protective diffusion region comprises at least a moderately doped protective band diffusion region formed in a light-f-protection band expansion-part The base contact electrode is in surface contact with a portion of the surface of the moderately doped guard band diffusion region. 15