200936316 - 六、發明說明： ' 【發明所屬之技術領域】 本發明係有關一種方法與裝置，用以藉由將修整器施 壓頂抗於研磨墊而修整在研磨台上的研磨墊，本發明也有 關一種研磨墊的輪廓量測方法、一種基板的研磨裝置、以 及一種基板的研磨方法。 【先前技術】 近來在半導體元件高度整合技術上的進步，使得互連 ❹件（interconnect)之間的佈線型樣（wiring patterns)更 小並且距離更窄。光微影（photolithography)是元件製程 的其中一步。在光微影製程中的步進機需要非常平的影像 平面（image plane)，特別是當製作最寬只有〇.5jum的互連 件時’因為焦點的深度很小之故。因此便會使用實施化學 機械研磨法（Chemical Mechanical Polishing，CMP)的研 磨裝置，來平面化半導體晶圓的表面。 Ο 傳統上，如第1圖所示，此種形式的研磨裝置通常包 括·研磨台102,在其上表面固持用以提供研磨面之研磨 墊（或是研磨布）1〇〇 ;頂環1〇4，用來固持基板（例如，半 導體晶圓）w，也就是要被研磨的工件。頂環1〇4會旋轉基 板W ’並且以固定的壓力將基板w施壓頂抗於旋轉中的研 磨口 102上的研磨墊，同時，噴嘴1〇6會供應研磨液 到研磨墊1GG上面，藉此將基板w的表面磨光成平坦的鏡 面可使用的研磨液的例子包括具有研磨粒懸浮在其中的 驗性溶液’而研磨粒則諸如二氧化石夕微粒。藉由採用此類 320815 4 200936316 研磨液，騎w補_性溶㈣化學研磨作 粒的機械研磨作用社 及研磨 該研磨f署：： 學地與機械地研磨。 的旁邊。此修震置，其係配置在研磨台102 τ劣化之研磨二 二使其修整面接觸到旋轉中的研 ,,_ .,. ^研磨墊10()的研磨面，藉此移除在研磨面上 ❹ Ο 面。通平面化和修整研磨墊1〇0的研磨 平面化研ίί器來作為修整器_，以刮拭和 y 100的研磨面。修整後的研磨面之均勻度會 對後續基板研磨^程巾的研磨準確度f彡響彳艮大。 B當以新的修整器汰換修整器108時，會發生下面的問 通因為個別的修整器其性質不同，新的修整器可能會具 有不同的研磨墊切削率（cutting rate)。結果，去除^ Or^moval rate)以及研磨輪廓也可能會改變。當以新的修 整器更換修整^彻之後，料要以指定的壓力將新修整 器朝研磨墊1〇〇施壓，藉此來對新修整器實施預處理。然 而預處理的過程是很棘手的，這是因為其可能會在研磨基 板W的開始階段對於研磨性能有不利的影響。此外於修整 過程中所移除的稠漿（slurry)可能會牢牢地沈積在修整器 108上’而不利於研磨性能的穩定性。 【發明内容】 本發明的目的係提出一種修整方法與修整裝置，可讓 新更換的修整器保持在一定的研磨塾切削率；可避免去除 320815 5 200936316 率與研磨輪廓因為具有不同性質的個別修整器而發生變 化，可預處理新安裝的修整器而不會對研磨墊產生不利的 影響；以及可避免固態的稠漿沈積在修整器上。本發明的 另一目的係提出一種輪廓量測方法。本發明再一目的係提 出種基板研磨裝置以及基板研磨方法，其能夠從修整器 量測出的切削率來求得研磨墊輪廓。本發明又一目的係提 出一種基板研磨裝置以及基板研磨方法，其能夠依照研磨 ❹ ❹ 墊的輪廓來對基板實施研磨。 為了解決上述弊端，本發明其中一個面向係提出一種 方法，用來測量在預定的修整條件下被修整器修整過的研 磨墊輪廓。該方法包括朝研磨墊的徑向（radial direction) 反複在研磨墊的上表面上移動修整器，以便對研磨墊實施 程序，在修整程序期間，量測於研磨面上之多個區域 中者之預定點處之研磨墊上表面的高度，而該多個 2係沿著研磨塾的徑向被配置；重複實施修整器的反複 :以及對於研磨墊上表面之高度的量測，以便量測出所 有區域中之研磨塾上表面的高度。 #如上所述之本發明，可以量測出研驟的㈣ =要使用昂貴的高性能資料處理裝置。 施修整器面向巾，該方法尚包括進一步重; 測，以及對於研磨墊上表面之高度< 而每個量值’並從_計算平均 依照如上所述之本=域中的上表面高度。 不發明’可以精確地量測出研磨： 6 320815 200936316 輪廓。 本發明的另-面向提出-種方法，用來修整位於研磨 台上的研磨墊。該方法包括：藉由在預定的修整條件下將 修整器施壓頂抗於研磨墊而修整研磨墊；量測研磨塾的切 削率；以及回饋切削率至預定的修整條件。 ❾ 〇 根據前述的本發明，即使更換新的修整器，研磨墊的 切削率仍然可以保持不變。因此，可避免由於個別修整器 的性質不同，導致去除率以及研磨的輪射所變化。 研磨= 面向提出一種修整裝置’用來修整位於 = 該裝置包括:修整器，係設置成藉由 摔下對研磨塾施壓而修整研磨墊;修整器 ㈣控’係設置成用來控制 ，整條件…及切削率量測部，設== 制器。修所測得的切削率至修整器操作控 切削率。 制4設置成在财修整條件中反映 切削率變即使更換新的修整器’研磨墊的 偵測佳面向’切削率量測部係設置成藉由 的轉矩電流:變化、m::來驅動研磨台之馬達 變化、以及&驅動g整$之馬達的轉矩電流之 垂直位置的=整器接觸到研磨塾時修整器之接觸表面之 本發月的另一面向提出一種修整裝置，用來修整研磨 320815 7 200936316 *台上的研磨塾°該裝置包括：修整器，設置成藉由對研磨 墊的上表面進行施壓來修整研磨墊，該修整器可操作成在 .包含研磨墊上表面的預定範圍内擺動；以及修整器預處理 裝置，設置成用來預處理修整器。修整器預處理裝置係設 置在研磨墊的上表面外侧之該預定範圍的一部分。 根據上述的本發明，可對修整器實施預處理而不會影 響正在使用的研磨墊。 ❺ 本發明較佳面向的修整器預處理裝置係包括切削率量 測裝置’其係設置成用來量測研磨墊的切削率。 根據上述的本發明，可以偵測修整器預處理的結束時 間（end point) 〇 本發明較佳面向的修整裝置，尚包括使用壽命判定元 件，設置成根據切削率量測裝置所測得的切削率，來判定 修整器的使用壽命。 根據上述的本發明，在將屆修整器的使用壽命時，町 ©以更換修整器。如此可保持研磨墊的最佳狀況。 θ本發明較佳面向的修整器預處理裝置，包括：轉矩電 /=置測部，設置成用來測量驅動修整器之馬達的轉矩電 流；以及結束時間偵測器，設置成根據由轉矩電流量測部 所測得的轉矩電流，來偵測修整器預處理的結束時間。 、^發明較佳面向的修整裝置尚包括清洗裝置，係組構 成田修整器的預處理裝置正在預處理修整器時，清洗修 整器的修整面。 根據上述的本發明，在修整期間黏附到修整器的稠漿 8 320815 200936316 ==可::移=能避免，漿與固_沈積 當狀態。 u器可保持在用來修整研磨塾的適 本發明的另—面向提出_ 研磨台上的研磨塾 > 冑置’用來修整位在 己的軸心來旋轉並;=:，，設置成繞著自 壓而修整研n ^ 預疋力里向研磨墊的上表面施 堡而〇整研麵，並且該修整器 Ο 修整器擺動機構’設置成使修整器在研磨墊;=朝 研磨墊的徑向擺動;修整器位置量===朝 置，設置成用二二1 ;切削率量測裝 罝成用來測量由修整器所修整的研磨塾之切 ==廓量測裝置，設置成從定義在研磨墊上表面的多 區域處測得的研磨墊切削率來得到研磨墊的輪摩，而多 個區域的位置則是藉由修整器位置量測裝置來測量；以及 修整器操作控制器，設置成用來控制修整器的操作。研磨 墊輪廓量測裝置所測量的研磨墊輪廓，係回授給修整器接 作控制器。 /正-琛 根據上述的本發明，研磨墊輪廓量測裝置所測量的研 磨墊輪廓，係回授給修整器操作控制器。因此，可實施研 磨墊的修整以便與實際的輪廓一致。換言之，實際的輪廓 可以被改變成理想的輪廓。該多個區域可沿著研磨塾的徑 向來安排。' 本發明較佳面向的修整器擺動機構包括馬達，作為用 來擺動修整器手臂的驅動源，而修整器位置量測裝置則是 320815 9 200936316 • 設置成根據供應至馬達的脈衝數（pulse number)來測量修 整器的徑向位置。該馬達可採用位置控制馬達（position • 0011计〇1 mo"t〇r)或是脈衝馬達（pulse motor，像是步進馬 達或伺服馬達）。 ❹ ❹ 本發明的另一面向提出一種基板研磨裝置，其包括： 用來支持研磨墊的研磨台；頂環，設置成用來旋轉基板， 並且在旋轉基板的同時，以預定的力量將基板施壓頂抗於 研磨塾；頂環操作控制器，設置成用來控制頂環的操作； 修’設置成繞著自己的軸心來旋轉，並且藉由以預定 力里對研磨墊的上表面施壓而修整研磨墊，而修整器被連 接到修整器手臂；修整器擺動機構，設置成使修整器在研 磨塾:上表面朝研磨墊的徑向擺動；修整H位置量測襄 置设置成用來測量修整器在研磨墊上表面上的徑向位 削率量魏置，設置成用來測量由修整器所修整的 f之切肖彳率；研料輪#量測裝置，設置成從定義在 =::;中的多個區域處測得的研磨塾切二 的量测襄置來:量而::區域的位置則是藉由修整器位置 修整、 器操作控㈣1置成用來控制 基板二的=板輪廊量測裝置:設置成用來測量 量測裝置所测量的*廓（removal proflle)。研磨墊輪廓 輪靡，則回授給卿操作=谢板上之薄膜的去除 根據上述的本發明，可實施基板的研磨以及研磨墊的 320815 10 200936316 G整’以便根據研磨墊的輪廟使實際的輪廟—致。換言之， 實際的輪廓可以被改變成理想的輪廓。因此，能改善基板 研磨以及研磨塾修整的準4度。再者，根據本發明可利用 已、、查U成研磨塾理想輪廓的研磨墊來研磨基板，以具有 在基板上之薄膜的理想去除輪廓。200936316 - VI. Description of the invention: 'Technical field to which the invention pertains» The present invention relates to a method and apparatus for trimming a polishing pad on a polishing table by applying a dresser against a polishing pad, the present invention There is also a method of measuring a profile of a polishing pad, a polishing apparatus for a substrate, and a method of polishing a substrate. [Prior Art] Recent advances in the highly integrated semiconductor component technology have resulted in smaller wiring patterns and narrower distances between interconnected interconnects. Photolithography is one of the steps in component manufacturing. Steppers in the photolithography process require a very flat image plane, especially when making interconnects with a width of only 〇5 μm, because the depth of the focus is small. Therefore, a polishing apparatus that performs Chemical Mechanical Polishing (CMP) is used to planarize the surface of the semiconductor wafer. Ο Traditionally, as shown in Fig. 1, this type of polishing apparatus generally includes a polishing table 102 on which a polishing pad (or a polishing cloth) for providing an abrasive surface is held; top ring 1 〇4 is used to hold a substrate (for example, a semiconductor wafer) w, that is, a workpiece to be polished. The top ring 1〇4 rotates the substrate W′ and presses the substrate w against the polishing pad on the rotating polishing port 102 at a fixed pressure, while the nozzle 1〇6 supplies the polishing liquid onto the polishing pad 1GG. The example of the polishing liquid which can be used to polish the surface of the substrate w into a flat mirror surface includes an organic solution in which the abrasive particles are suspended, and the abrasive particles such as silica dioxide particles. By using such a 320815 4 200936316 slurry, a mechanical grinding machine for grinding and grinding (four) chemical grinding and grinding is carried out:: ground and mechanical grinding. Next to it. The oscillating device is disposed on the grinding table 102 τ to deteriorate the grinding of the polishing surface so that the trimming surface contacts the grinding, _.,. ^ polishing surface of the polishing pad 10 (), thereby removing the grinding Face Ο face. Through the planarization and dressing of the polishing pad 1〇0, the flattening is used as a dresser _ to wipe and y 100 the polished surface. The uniformity of the polished surface after trimming will greatly increase the grinding accuracy of the subsequent substrate polishing. B When the dresser 108 is replaced with a new dresser, the following will occur. Because of the different properties of the individual dressers, the new dresser may have different cutting rates. As a result, the removal of ^ Or^moval rate) and the grinding profile may also change. After the dressing is replaced with a new dresser, the new dresser is pre-treated by applying pressure to the polishing pad 1 at a specified pressure. However, the pretreatment process is tricky because it may have an adverse effect on the polishing performance at the beginning of the grinding of the substrate W. In addition, the slurry removed during the trimming process may be firmly deposited on the dresser 108' unfavorable for the stability of the abrasive performance. SUMMARY OF THE INVENTION The object of the present invention is to provide a dressing method and a trimming device, which can keep a newly-replaced dresser at a certain grinding boring rate; and can avoid removing 320815 5 200936316 rate and grinding profile because of individual trimming with different properties. The change in the device allows the newly installed dresser to be pre-treated without adversely affecting the polishing pad; and the solid thick slurry can be prevented from depositing on the dresser. Another object of the present invention is to provide a profile measurement method. Still another object of the present invention is to provide a substrate polishing apparatus and a substrate polishing method which are capable of obtaining a polishing pad profile from a cutting rate measured by a dresser. Still another object of the present invention is to provide a substrate polishing apparatus and a substrate polishing method which are capable of polishing a substrate in accordance with the contour of the polishing pad. In order to solve the above drawbacks, one of the aspects of the present invention proposes a method for measuring the profile of a polishing pad that has been trimmed by a dresser under predetermined trim conditions. The method includes repeatedly moving the trimmer over the upper surface of the polishing pad in a radial direction of the polishing pad to perform a procedure on the polishing pad, which is measured in a plurality of regions on the polishing surface during the trimming process The height of the upper surface of the polishing pad at the predetermined point, and the plurality of 2 series are arranged along the radial direction of the grinding crucible; repeating the repeating of the dresser: and measuring the height of the upper surface of the polishing pad to measure all the areas The height of the upper surface of the grinding crucible. # The invention as described above can measure the (4) of the study = use an expensive high-performance data processing device. The dresser is facing the towel, and the method further includes measuring, and the height of the upper surface of the polishing pad < and each magnitude' and calculating the average from _ according to the upper surface height in the present = domain as described above. No invention can accurately measure the grinding: 6 320815 200936316 contour. Another aspect of the present invention is directed to a method for trimming a polishing pad located on a polishing table. The method includes: trimming the polishing pad by applying a dresser against the polishing pad under predetermined conditioning conditions; measuring the cutting rate of the polishing pad; and feeding back the cutting rate to a predetermined finishing condition. ❾ 〇 According to the foregoing invention, the cutting rate of the polishing pad can be maintained even if a new dresser is replaced. Therefore, it is possible to avoid variations in the removal rate and the grinding of the grinding due to the different properties of the individual dressers. Grinding = facing a dressing device 'for trimming' = the device includes: a dresser configured to trim the pad by applying pressure to the grinder; the dresser (four) control is set to be used for control, Condition... and cutting rate measurement unit, set == controller. Repair the measured cutting rate to the dresser operation control cutting rate. System 4 is set to reflect the cutting rate change in the trimming condition. Even if a new dresser is replaced, the detection of the polishing pad is set to the torque rate current: the change, m:: drive The motor of the grinding table changes, and the vertical position of the torque current of the motor that drives the motor is equal to the other side of the month in which the whole surface of the contact surface of the dresser contacts the polishing crucible, and a trimming device is proposed. To trim the grinding 320815 7 200936316 *The grinding 台 on the table The device comprises: a dresser arranged to trim the polishing pad by applying pressure to the upper surface of the polishing pad, the dresser being operable to include the upper surface of the polishing pad Swinging within a predetermined range; and a trimmer pretreatment device configured to pretreat the trimmer. The dresser pretreatment device is disposed on a portion of the predetermined range outside the upper surface of the polishing pad. According to the invention as described above, the dresser can be pretreated without affecting the polishing pad being used. The dresser pretreatment apparatus preferably oriented to the present invention includes a cutting rate measuring device </ RTI> configured to measure the cutting rate of the polishing pad. According to the invention as described above, the end point of the trimmer pre-treatment can be detected. The dressing device preferably oriented to the present invention further includes a service life determining component which is set to be cut according to the cutting rate measuring device. Rate to determine the service life of the dresser. According to the invention as described above, in the life of the trimmer, the town is used to replace the dresser. This keeps the best condition of the polishing pad. θ The preferred dresser pre-processing apparatus of the present invention comprises: a torque electric/= detecting unit configured to measure a torque current of a motor driving the trimmer; and an end time detector configured to be The torque current measured by the torque current measuring unit detects the end time of the trimmer pre-processing. The invention of the preferred dressing device further includes a cleaning device, and the pretreatment device for assembling the field dresser cleans the trimming surface of the dresser while pretreating the dresser. According to the invention as described above, the thick paste adhered to the dresser during trimming 8 320815 200936316 == can be:: shift = can be avoided, slurry and solid_deposited state. The U can be held in the other side of the invention for dressing the grinding crucible - the grinding 塾 on the grinding table is used to trim the position on the axis of the shaft to rotate and; =:, set to Grinding and grinding the upper surface of the polishing pad around the self-pressing force to grind the surface of the polishing pad, and the dresser 修 dresser swinging mechanism is set to make the dresser in the polishing pad; The radial swing; the position of the dresser === facing, set to use 2 2; the cutting rate measurement is used to measure the cutting of the grinding 修 which is trimmed by the dresser == profile measuring device, set The grinding pad is cut from the multi-region defined on the upper surface of the polishing pad to obtain the grinding wheel, and the positions of the plurality of regions are measured by the trimmer position measuring device; and the trimmer operation control Set to control the operation of the trimmer. The profile of the pad measured by the pad profile measuring device is fed back to the dresser control controller. /正-琛 According to the above invention, the polishing pad profile measured by the polishing pad profile measuring device is fed back to the dresser operation controller. Therefore, the dressing pad can be trimmed to conform to the actual contour. In other words, the actual contour can be changed to the desired contour. The plurality of regions can be arranged along the radial direction of the grinding crucible. The preferred embodiment of the dresser swing mechanism includes a motor as a drive source for swinging the trimmer arm, and the dresser position measuring device is 320815 9 200936316 • is set to be based on the number of pulses supplied to the motor (pulse number ) to measure the radial position of the dresser. The motor can be controlled by a position control motor (position • 0011 〇 1 mo"t〇r) or a pulse motor (such as a stepper motor or servo motor).另一 另一 Another aspect of the present invention provides a substrate polishing apparatus comprising: a polishing table for supporting a polishing pad; a top ring configured to rotate the substrate, and applying the substrate with a predetermined force while rotating the substrate The top is resistant to the grinding boring; the top ring operating controller is configured to control the operation of the top ring; the trimming is set to rotate about its own axis, and the upper surface of the polishing pad is applied by a predetermined force Pressing and polishing the polishing pad, and the trimmer is connected to the dresser arm; the dresser swinging mechanism is arranged such that the dresser swings in the radial direction of the polishing pad on the upper surface; the trimming H position measuring device is set to be used To measure the amount of radial cutting rate of the dresser on the upper surface of the polishing pad, which is set to measure the cutting rate of the trimmed by the dresser; the grinding wheel # measuring device is set to be defined in The measurement of the grinding and cutting of the measured area at a plurality of areas in the =::;: and the position of the area is adjusted by the position of the dresser, and the operation of the device is controlled (4) 1 to control the substrate Second = plate wheel measuring device: set It is used to measure the measurement proflle measured by the measuring device. Polishing pad contour rim, then feedback to the Qing operation = removal of the film on the board. According to the invention described above, the grinding of the substrate and the polishing pad 320815 10 200936316 G can be implemented to make the actual according to the wheel temple of the polishing pad. The turn of the temple. In other words, the actual contour can be changed to the desired contour. Therefore, it is possible to improve the quasi-four degrees of substrate polishing and polishing tampering. Further, in accordance with the present invention, the substrate can be polished using a polishing pad that has been etched into a desired profile to provide a desired removal profile of the film on the substrate.
本發明較佳面向的修整器擺動機構包括馬達，該馬達 =括作為用來擺動修整器手臂的驅動源的位置控制馬達或 疋脈衝馬達’轉整旨位置量㈣置則是設置成根據輸進 馬達的脈衝數來測量修整器的徑向位置。 本發明的另一 • 囬问托出一種基板的研磨裝置，其€ 括·用來支持研磨墊的研磨台；頂環，設置成用來旋轉4 板，並且在旋轉基板的同時，將基板以狀的力量施壓了 抗於研磨墊，而__財被相衫舰域（regi· 之基板固持表面；頂環操作控制器，設置成用來控制頂; 的操作；修整器，設置成繞著自己的軸來旋轉，並幻 由乂預疋力S對研磨塾的上表面彡罐而修整研磨塾，而4 整器被連接到修整n的手臂；修整器擺動機構，設置如 修整器在研磨墊的上表面上朝研磨_徑向擺動；修⑸ 位置量測裝置，設置成用來測量修整器在研磨塾上表面€ 控向位置；_率量測裝置，設置成絲測量由修 修整的研磨墊之切削率；研磨墊輪廓的量測裝置， 從定義在研磨塾上表面中的多個區域處測得的研磨=切; ，來得到研磨_輪！·卩，而多傭域驗置収藉由修4 盗位置量測裝置來測量；修整器操作控制器，設置成用4 320815 11 200936316 '控制修整器的操作；以及施壓力量控制器，係組構成依照 根據研磨墊輪廓量測裝置測得的研磨墊輪廓所得到的研磨 .墊厚度，來控制在基板固持表面之該等區域的施壓力量。 根據上述的本發明，可依照研磨墊的輪廓來對基板實 施適當的研磨。舉例來說，可以實施回授控制，使得了貝環 之基板固持表面之對應於研磨墊較薄部分的區域之施壓力 量可以選擇性地調整成高於其他區域的施壓力量。 本發明的另一面向提出一種基板研磨方法，其包括： 藉由以預定的力量將旋轉中的修整器施壓頂抗於研磨墊的 上表面，來修整研磨台上之研磨墊；在研磨墊修整期間， 使修整器在研磨墊的上表面上朝研磨墊的徑向擺動· ，測量 修整器在研磨墊之上表面上的徑向位置；測量定義在研磨 墊上表面中的多個區域處之研磨墊的切削率；從研磨墊的 切削率求得研磨墊的輪廓；以頂環來固持基板，該頂環具 有被分割成多個區域之基板固持表面；在旋轉基板的同 Ο 時，將基板施壓頂抗於研磨墊的上表面；在將基板施壓頂 抗於研磨墊之上表面的同時，依照依據研磨墊輪廓而得到 的研磨墊厚度，來控制基板固持表面中之該等區域的施壓 力量。 根據上述的本發明，可依照研磨墊的輪廓來對基板實 施適虽的研磨。舉例來說，可以實施回授控制，使得頂環 的基板固持表面之對應於研磨墊較薄部分的 區域之施壓的 力里可以選擇性地調整成高於其他區域的施愿力量。 本發明較佳面向之各個區域的研磨墊切削率，是於研 12 320815 200936316 磨墊各舰則巾心部分 本發明較佳^ “ 料里擊 個區域中的多個邻;^ 域的研磨塾切削率，是於各 夕個科處之切削率量測值的平均值。 【-貫施方式】 ，在將佐以附圖，敘述本發明的實施例。第2圖與第 3圖疋根據本發明的廉 a的只施例之具有修整裝置的研磨裝置。 如2 3圖所示’ _該實施酬研磨裝置包括： ❹ ❹ 研磨' 1 ’在其上表面支持著研磨塾4;頂環（圖上未緣 出）’係在其下表面固持諸如半導體晶圓的基板，並且將基 板施壓頂抗於研磨塾4的上表面；以及修整器3，係組構 成用來修整研磨塾4的上表面。研磨台^係連_馬， 並且會如第2圖的箭頭A所示，繞著自己的軸旋轉。 修正器3係經由像是齒輪(卿^組件的動力傳輸機構 15連接到馬at 14。修整器3係進一步連接到升降缸 (elevatmg Cyllnder)16e修整器3可朝箭頭b指示的方 向^藉由升降缸16來垂直移動。在進行修整時，升降缸 16係將修整器3向下移動，而以某壓力將修整器3施屢頂 抗於研磨塾4，在此同時馬達14也會使修整H 3朝箭頭c =:繞:自己的轴旋轉。修整器3連接到修整器轴 上去检屮、^金屬層9作為修整器3 Μ表面。鑽石顆粒（圖 9二If由金屬鍍覆等的方式，緊密地接著到金屬層 研台1的上方，設置有修整液體供應噴嘴5， 磨塾4。馬達14與升降㈣是由修整器操作控制器（圖1 320815 13 200936316 :制，以便在所需的修整條件下操作修整器3, 該修整條件包括修整器3對 '修整器3的轉速。 磨墊4所施加的壓力，以及 修整器3具有修整器臂？甘〆# 著擺動勤「岡卜土故山、 其係藉由擺動機構6而繞 田未曰出）的中央轴心0朝箭頭D所;士 向擺盪（擺動）。擺動機構6包括齒 j Θ7Τ? 作為驅動源的馬達29。馬 '、_6~2以及 ❹ 脈® 、、達29可使用位置控制馬達或是 脈衝馬達。更具體地說，馬達 疋 馬達。當研磨台1鱼修馨^ Α使用舰馬達或疋步進 整哭3 In 态繞其各自的軸心旋轉時，修 正盗3會被降下，將固持於金屬 抗於研磨墊4的上矣的鑽石顆粒施壓頂 、登4的上表面，利用研磨藝4與修 相對運動來刮擦研磨塾4 ° 曰、 墊4的上矣而ΓΓ壯表面’藉此修整及回復研磨 出)1 整裝置尚包括修整器位置量測裝置（未繪 ❹ 研磨塾4= 舞表成根據供應至馬達29的脈衝數來偵測位於 磨塾4的上表面上之修整H 3的徑❼ 在本例中是使用擺動機構6朝 動)修整_2。二== 來移動修研磨塾4的徑向 整^^冓成藉由往感測器線圈通入高頻的電流而在修 感i之、丹^層9中誘發渦電流’並根據在金屬層9内所 是的量度，來量測研磨塾4的厚度。研磨墊4 電材料（諸如發泡聚4基曱酸酯（f_ed 320815 14 200936316 ，poiyurethane))所製成。因此，如果研磨墊4較厚，則修 整态3之金屬層9内感應的渦電流便較小；如果研磨墊4 較薄，則金屬層9内感應的渦電流便較大。故藉由測量金 屬層9内所感應的渦電流，便能決定研磨塾4的厚度。渦 電流感測器10具有連接至導線18之輸出端，而導線18則 穿過研磨台1、研磨台支撐軸la、以及安裝在研磨台支撐 轴la其中一端的旋轉連接器^而延伸到控制器12。控^ ❹器12係連接至顯示卓元1.3。满電流感測器1 〇、控制器12 以及顯示單元13組成了涡電流式的研磨墊厚度偵測監視 器π。可使用滑動環（slip Hng)來代替旋轉連接器u。 本例中’係在研磨墊4下方設置單一個渦電流感測器 如第2圖所示。另一種作法為在研磨墊4下方設置多 個渦電流感測器。在此情形中，如第9圖所示，可將研磨 塾4的上表面分成沿著研磨墊4的徑向配置的多個區域， 並在個別區域中心部分的下方設置渦電流感測器，以便量 ® 測個別區域中心部分的厚度。 藉由使用渦電流式研磨墊厚度偵測監視器17，渦電流 的感測器10可根據在修整器3之金屬層9内所產生的渦電 流，來偵測出研磨墊4的厚度變化；由渦電流感測器1〇所 偵測到的渦電流值會顯示在顯示單元13上，且量測出研磨 塾4的厚度。根據來自渦電流感測器1〇的訊號，控制器 ^便能測量修整器3切削或修整研磨墊4的切削率。 此經量測之切削率會從控制器12回授給控制馬達14以及 升降缸16的修整器操作控制器，故可將切削率反映在修整 15 320815 200936316 • 條件中，像是修整器3藉由升降缸16對研磨墊4所施加的 、 壓力、修整器3在研磨墊4的上表面沿著徑向的移動速度、 - 以及馬達14旋轉修整器3的轉速。 本實施例中，由修整器3修整之研磨墊4的切削率， 是藉由渦電流感測器10來量測。另一種作法為，藉由下述 方法來測量切削率：偵測驅動（旋轉）研磨台1的馬達7之 轉矩電流的變化；或是偵測驅動（旋轉）修整器3的馬達14 之轉矩電流的變化；或是修整器3接觸研磨墊4的接觸表 ® 面之垂直位置的變化；或是以上這些變化的組合。修整器 3的接觸表面之垂直位置的變化，可藉由測量修整器3之 垂直位置的變化來偵測。如上述，在研磨墊4上表面上之 修整器3的徑向位置係藉由供應到馬達29(例如位置控制 馬達或是脈衝馬達）的脈衝數來偵測。然而，只要是能夠偵 測出研磨墊4上表面上之修整器3的徑向位置，任何裝置 或手段都可以採用。 0 上述的研磨裝置中，由於個別的修整器之性質不同， 將修整器3更換成新的修整器可能會造成研磨墊4之切削 程度（即切削率）的改變，而導致去除率以及基板上薄膜的 研磨輪廓的改變。當以新的修整器更換修整器3之後，通 常要以指定的壓力將新的修整器朝研磨墊4施壓，來對新 的修整器實施預處理。然而預處理的過程是很棘手的，這 是因為其對於研磨性能可能會有不利的影響，特別是在研 磨基板W的開始階段。因此，本實施例中，研磨裝置具有 修整器預處理裝置20，其係組構成在以新的修整器3汰換 16 320815 200936316 .售的修整器之後’對新的修整器3實施預處理 .所不。修整器的預處理裝置配置在修整器3的閒詈 -位置，也就是設置在研磨塾4上表面外側之修整器 e 範圍的末端之位置。 〇〇擺動 第4A圖是顯示修整器預處理裝置2〇的側 4第Τ:Γ他處理裝置20的俯視圖。心 第4β圖所示，修整器預處理裳置20具有修整器預處㈣ ❹ 2: ’其包括基座21以及附著在基座21的修整 構 ^2。修整器預處理部23由支_ 2?來切。修整= =::=動_ 頭F指示的方向由馬達（圖上未緣出）沿著箭 ㈡的製作材料旋轉。修整器預處理構件 , 墊4相同，例如發泡聚氨基曱酸酯。 ο 處理構件22具有許多清洗液切孔24，其開口 °用來噴出清洗液，而清洗液是經由設 的清洗液供應管违Γ圇'土认 1 τ 整器清洗刷25(像被供應。魅向延伸的修 之传絲競刷）可附著到修整11預處理部23 位置〔斋…刷25通過修整器預處理構件22的中央的 洗液修整器預處理部23係浸泡在清 四周設有密封機構28Q中，以便保持濕潤。沿著支_ 外頭。當以新·敕」^避免清洗液Q漏出清洗液槽26 的預處理部23會二 換用過的修整器之後，修整器 ϋ已餐就定位在修整器預處理部23正 320815 17 200936316 •上方之閒置位置的新修整器3上升，並且以預定的力量對 修整器3的下表面施壓，如第 -如弟6圖所不。在此狀態下，修 己的軸心旋轉，、： 也會朝箭頭C指示的方向繞著自 ❹ 相對運動。由於^成修整器預處理部23與修整器3之間的 時修整器預處理^種相對運動，修整器3係被預處理，同 整器預處理部23件22的上表面也會被修整器3刮除。修 轉逮是由（圖上未所施加的壓力以及修整器預處理部23的 部23也可以保轉、的）控制器來控制。修整器的預處理 預處理部23。、不動，以取代同時旋轉修整器3與修整器 修整器預處埂举罢 的基座21中的、20具有設置在修整器預處理部23 器和第2圖中的'^電机感測器（圖上未繪出）。該渦電流感測 量修整器預處馮電流感踯器10是相同的，並且被用來測 ❹預處理構件22 rzz的厚度變化’以及用來測量修整器 一般狀況下事先、、切削率。所測得的切削率係和修整器3在 率為正常，便可=侍的切削率互相比較。如果測得的切削 預處理程序。如汽斷預處理程序已達預處理終點 ，而結束 理部23便會繼鈐剛得的切削率不正常，那麼修整器預處 通常，修楚處理修整器3，以便調整切削率。 的使用壽命期間器3對研磨墊4的切削率，會在修整器3 低。然而，全新隨著鑽石顆粒稜角部位的磨耗而逐漸降 對於研磨墊4的^修整器傾向於在其使用壽命的開始階段 、刀削率展現出快速下降的現象，直到一段 320815 1» 200936316 •時間以後切削率的下降才不會道麼劇烈。因此便有可能藉 由债測切削率的下降不會這麼劇烈的該時間點，來判 修整器3之預處理的結束。 …修整器預處理構件22的切削率可藉由用以驅動修整 器3之馬達14(見第2圖）的轉矩電流、或是用以驅動終敕 器預處理部23之馬達（圖上未繪出）的轉矩電流、或是這= 種轉矩電流值的組合而測量出。另一種作法是，可設置修 ❾整θ垂直位置感測器（圖上未緣出），用來在修整期間測量 修整器3的垂直位置，使得修整器預處理構件22的切削 可根據該修整器垂直位置感測器的輸出訊號來量測。 在修整器3的預處理程序結束以後，修整器3與修整 器預處理部23至少其中一者係朝互相遠離的方向移動二以 便在修整器3的下表面與修整器預處理構件22的上表面之 間形成間隙，如第7圖所示。之後，使修整器清洗刷25 = 牛固地固持住鑽石顆粒之金屬層9的下表面接觸。在此狀 ❹態下，令清洗液q(例如，純水、化學溶液或是純水、化風 溶液及氮氣的混合物）從修整器預處理構件22的清洗= 射^ 24往金屬層9喷出’藉此清洗金肩層9的下表面。採 ^種方式’便可從金屬層9的下表面移除諸如稠漿的二 在完成預處理程序與清洗程序之後，並且當研磨裝置 正在研磨基板時，金屬層9的下表面係浸泡在清洗液^ ，g t >如第8圖所示D在此間置的位置’;整 °° 3係繞著自己的軸心旋轉’同時使金屬層9的下表面接 320815 19 200936316 -觸到修整n清洗刷25，以使金屬層9的下表面保持濕潤與 潔。修整器3的下表面係因此保持濕潤與清潔。 ……業已使用長時間來修整研磨墊4的修整器3，其切削 率會降低。當切削率降低到預定程度時，便判斷該修整器 3已屆使用壽命，而用新的修整器來更換修整器3。修整器 ，處理裝置2G可用來蚊修整n3是否已屆使用壽命。更 詳細地說’修整器預處理裝置2〇可具有修整器使用壽命判 ❹斷部，其係根據修整器預處理構件22的切削率來判斷修整 器γ之使用壽命的終點❶要判斷已用來修整研磨墊4的修 整器3之使用壽命的終點，係將修整器3置於修整器預處 理，置20上，並且修整修整器預處理構件22。修整器使 用壽命判斷部係測量修整器預處理構件22的切削率，並根 據所測得的切削專判斷修整器3是否已屆使用壽命。 在由修整器預處理裝置2〇對新更換的修整器3實施預 處，的過程中，用來驅動修整器3之馬達14的轉矩電流會 ❹隨f預處理過程的進行而改變。舉例來說，馬達14的轉矩 電机會在預處理過程中逐漸降低，直到預處理過程接近完 成時才會變成固定值。因此，有可能藉著監測馬達14的轉 電机，來偵測修整器3的預處理終點。 在每次完成一片基板的研磨之後，修整器3便會修整 研磨台1上之研磨墊4的上表面。 旋轉中的修整 器 S 合 胃以預定的壓力’對在旋轉中的研磨台1上之研磨墊 的上表面施壓。更詳細地說，如第3圖所示，當修整器3 將其修整面施壓頂抗於研磨墊4的上表面時，修整器3係 20 320815 200936316 ' 沿著箭頭D所指示之研磨塾4的徑向，繞著中炎轴、〇 -複地擺盪或是擺動。研磨墊4的一個修整程序係藉 重 *磨墊4上之旋轉中的修整器3之多次的擺動運動^重複= 擺動運動）來實施。修整後的研磨塾4之輪靡（上表面的形 狀）的測量，是藉由測量研磨墊4在多個區域内的預定點1 至e的厚度（即上表面的高度）來執行，而該多個區域是/ 著研磨墊4上表面上的徑向上排列，如第9圖所示。/σ ❹ ⑹果欲於祕m次的_魏巾依序測量研磨 墊4在a至e五點處的厚度，則需要高速的資料處理。因 此，需要能實施此種高速資料處理的昂貴資料處理器。故 於本實施例中，於每次修整程序中僅測量a至e其中一 的研磨墊4之厚度。換言之，在每一次修整器3實施一個 修整程序的時候，僅測量多個區域當中的一個之一個預定 =的研磨墊4的厚度。舉例來說，在第一次修整過程時= 量a點的研磨墊4之厚度、在第二次修整過程時測量b點、 〇在第三次修整過程時測量c點、在第四次修整過程時測量 d點、在第五次修整過程時測量e點。採用這種方式，在 多次修整過程（本例中，為用於a至e點之五次修整過程） 後’測量出研磨墊4在a至e各點的研磨墊4之厚度。為 了防止雜訊對測量的不良影響，研磨墊4在a至e各點的 厚度會被測量多次，並計算a至e各點之測量值的平均。 此經計算得到之平均值便使用做為研磨墊4在各點的厚 度:舉例來說，在第9圖中’研磨墊4在a點的厚度被測 量多次’而多次測量值的平均便當作是a點處的厚度。研 320815 21 200936316 * 磨墊4在b點的厚度被測量多次，而多次測量值的平均便 - 當作是b點處的厚度。研磨墊4在c至e點的厚度也是以 . 相同方法測量。 如上所述，重複測量研磨墊4的厚度，直到獲得多個 區域中所有預定點之厚度的量測值。因此，在研磨多塊基 板並多次修整研磨墊4之後，便可由量測值中測得（或決定) 研磨墊4的輪廓。重複此組測量步驟數次，便可由厚度的 測量結果計算出平均輪廓。最後得到的平均輪廓係作為研 ® 磨塾4的輪廓，並反映在研磨配方（recipe)。在第9圖的 例子裡，於研磨五塊基板並且修整研磨墊4五次以後，測 量出點a至e處之研磨墊4的厚度，從而得到研磨墊4的 一個輪廓。重複此組步驟三次（即研磨基板十五次），以將 由量測結果計算出之平均輪廓用作為研磨墊4的輪廓並反 映在研磨配方中。 第10圖是根據本發明實施例之基板研磨裝置的示意 q 圖。研磨墊4的修整過程實施如下。研磨台1以箭頭A指 示的方向旋轉，而修整器3以箭頭C指示的方向旋轉。修 整器3係以預定的力量，對於附著在研磨台1上表面的研 磨墊4之上表面來施壓。在此狀態下，修整器3係藉由修 整器手臂2的搖擺移動（參看第3圖）而沿著箭頭D指示之 研磨墊4的徑向作往復運動（reciprocated)，藉此修整研 磨墊4。研磨墊4的上表面係分割成沿著研磨墊4的徑向 配置的環狀區域Z1至Z7。在修整過程中，當修整器3在 區域Z1至Z7的中心部分上之際的位置係藉由供應到馬達 22 320815 200936316 29(其為位置控制馬達或是脈衝馬達）的脈衝數而偵測出 來，從而測得區域至Z7之中心部分的研磨墊4厚度。 修整器3在研磨塾4上表面的徑向位置可藉由供應到馬達 29的脈衝數而被精確地偵測。第10圖中的符號τι至T7 分別表示各個區域Ζ1至Ζ7之中心部分之研磨塾4的厚度 的量測值。 研磨墊4的修整輪廓是從研磨墊4在區域Ζ1至Ζ7中 之厚度的測量值Τ1至Τ7所測出。輪靡係回授給修整器操 作控制器’並且反映在修整條件（例如修整器3向研磨塾4 施加的塵力、修整器3在研磨墊4上表面的徑向移動速度、 以及修整器3的轉速）中。如此便可得到研磨塾4之理想的 修整輪廓。 元件符號30表示頂環，其係組構成用其下表面固持基 板W，並且以箭頭g所指示的方向繞著旋轉軸（未繪出）來 旋轉基板W。此頂環3〇在其下方的周邊上具有扣環 〇 (retainer ring)32。在扣環32内設置有壓力腔Ml至财。 此專歷力腔Ml至M4是由薄膜（membrane)41所形成。此薄 臈41的下表面是做為用以支持基板w的支持表面。藉由調 壓力腔Ml至中的壓力，透過接觸到壓力腔的基板W 而向研磨塾4所施加的壓力便可得到控制。 ㈣疋分別設置在和各愿力腔至M4流體連 广心道中。根據代表研磨塾4在區域幻至z7之厚 量值T1至77 ’來控制這些勤控制器，以調整由 薄膜41所形成㈣力腔们至M4 _㈣。藉由這些操 23 320815 200936316 作，壓力腔ΜΙ至Μ4可根據研磨塾 分佈。如此可實現基板w上之薄膜、、的厚度而提供一壓力 除輪廓），而不被研磨#4之 當的研磨輪廓 (或去 〇 應於具有較小之研磨墊4厚度測θ廓影響。在一例中，對 腔中之>1力係、選擇性地調整二5值的區域（部位）之堡力 之區域（部位）之其它壓力腔的2力對應於具有較大測量、值 的研磨率（去除率）可在其整個表’使得基板w上之薄膜 本發明並不限於此種壓力調整方=上表現得平均。然而， 控制，使得各區域的施壓力：照；磨上’係實施回授 便得到所需的研磨輪廓。當連續 4的輪廓調整，以 墊的輪廓會隨時間而改變，故此、基板進行研磨時，研磨 納入施壓力控制之變數的考量巾種研磨塾輪#的改變也可 對應到具有較小之研磨墊4 曰 之壓力腔係被選擇性地調整成高：：量值的區域(部位) 值之區域（部位）其它壓力腔的壓力。…到具有較大之測量 整輪廓會回授給修整II操作 4者’研磨墊4的修 :之:整輪靡。根據所得到的理想之研 ==塾 來調整I力腔Ml SM4内的壓力。因此’可實現基板界上 之薄膜之更適當的研磨輪靡。 第11圖是顯示根據本發明實施例之基板研磨袭置中 所使用之頂環的示意結構的垂直剖面圖。頂環30具有：頂 環本體31 ’其係呈圓筒容器狀；以及扣環32，係固定在頂 環本體31的下端部分。在頂環本體31内設置有環狀的壓 力片33。該壓力片33插在頂環本體31以及壓力片支撐構 320815 24 200936316 件34之間，並由頂環本體31内部周圍的下表面來支撐著。 頂環驅動軸35係配置於頂環本體31上表面的中央處上。 頂環本體31與頂環驅動轴35透過萬向接頭36連接在一 起。該萬向接頭36包括：球面軸承機構，其具有軸承滾珠 37能讓頂環本體31與頂環驅動軸35可相對於彼此傾斜； 以及沒有晝出來的旋轉傳動機構，係將頂環驅動軸35的旋 轉傳動到頂環本體31。頂環本體31可相對於頂環驅動軸 3 5來作傾斜，並且接收頂環驅動轴3 5的旋轉而作轉動。 在由頂環本體31與扣環32界定的内部空間中，有碟 形的夾盤（chucking piate)38。夾盤38藉由夹盤固持構件 39被固持在壓力片33的下表面上。頂環本體31、壓力片 33以及夾盤38界定出夾盤38上的壓力腔M5。壓力片33 是由諸如橡膠的彈性材料構成。隨著壓力腔M5内之壓力的 上升或下降，夾盤38也會隨之下降或上升。夾盤38的下 表面係做為用來固持住基板W的固持表面。 環狀薄膜41a、41b、41c與41d係配置在夾盤38的下 表面上。薄膜41a的上緣係插進夾盤38與環狀薄膜固持件 51之間，使得薄膜41a安裝在夾盤38下表面的中央部分。 薄膜41b的上緣係插進夾盤38與環狀薄膜固持件51之 間，使得薄膜41b安裝在夾盛38下表面上。此薄膜41b配 置在薄膜41a的周圍。薄膜41c與41d的上緣係插進夾盤 38與環狀薄膜固持件52之間，使得薄膜41c與41d安裝 在夾盤38下表面的外圍部分上。薄膜41c配置在薄膜41b 的周圍，而薄膜41d配置在薄膜41c的周圍。壓力腔Ml、 25 320815 200936316 4ld、基板w以及 M2、M3與M4是由薄膜41a、41b、41C與 夾盤38所形成。 流體管道42、43、44、45分別連接到壓力腔n M3、M4。此等流體管道42、43、44、45係經由壓力控制器 1^、？2、？3、1^與壓縮空氣源48流體連通。流體管道46 連接到壓力腔Μ5’0此《管道46亦經由壓力控制器 Ρ5連接到壓縮空氣源48。第11圖中的符號幻、犯、幻、 ❿ 〇 S4代表感測器，每個感測器是用來測量流經每個流體管首 42、43、44、45的流體(壓縮空氣)的迷度、壓力鮮量、 在上述_環3G I係操健力#— p5以控制要 從壓縮空氣源48經由流體管道46供應至壓力腔奶的氣 壓，以便控制基板W整個表面上之頂抗研磨墊4的上表面 的施壓力。此外，係操作壓力控制器P1、p2、p3、p4以抑 制要從壓縮空氣源48通過流體管道42、43、44、45而^ 應至壓力腔Ml、M2、M3、M4的氣壓’以便控制位於壓力腔 Ml、M2、M3、M4下方之基板W之區域（部位）上的施壓力。 流經流體管道42、43、44、45的流體（壓縮空氣）之速 度 '壓力與流量係被感測器SI、S2、S3、S4所測量，且此 等測量值D1係被送達控制器50。數種型式之資料D2(包括 研磨基板W所需之研磨輪廓與所量測的研磨墊輪廓）係儲 存在控制器50内。該控制器50被組構成，從資料D2與測 置資料D1計算出在研磨基板w的期間要在壓力腔mi、M2、 M3、M4内建立的壓力，以達到目標研磨輪廓。再者，控制 器50也被組構成用來計算要供應至壓力腔之壓縮空氣的 26 320815 200936316 速度、壓力與流量，並對壓力控制器PI、P2、P3、P4、P5 發出控制訊號CS1、CS2、CS3、CS4、CS5，以便藉由控制 ’益P1 ' P2 ' p3 ' P4 ' P5來控制要供應至壓力腔Ml、M2、 M3 M4 M5之壓縮空氣的速度、壓力與流量。 第丨2圖是顯示在基板的研磨過程中，用來反應如上述 量測到之研磨塾修整輪廓的流程圖。將基板上之薄膜所需 的研磨輪廣輸入到控制器50(步驟ST1)。之後實施研磨墊 ❹4的修整（步驟ST2)。在各區域處測量研磨墊4的厚度，以 得到（也就是測量到）研磨墊4的厚度輪廓（步驟ST3)。在 另一方面，實施基板w的研磨（步驟ST4)，並測量基板W 上之薄膜的研磨率，而得到研磨輪廓資料（步驟ST5)。 比較在步驟ST3得到的研磨墊4厚度輪廓與理想的研 磨墊4厚度輪廓，以及比較在步驟ST5得到的研磨輪廓與 理想的研磨輪廓（步驟ST6)。接下來，由步驟ST6的比較 、’、σ果判斷出知到的輪廓與理想輪廓之間的差異是否在預定 ❹值的範圍内。當該差異位於預定值之内（即「yes」），便結 束流程。另一方面，當差異超出了預定值（即「N0」），便 進行用來改變修整條件與研磨條件的計算（步驟咖。 根據上述的4算結果來改變修整條件（例如，修整器3 施加於研磨墊4上表面各區域Z1至π的施壓力、修整器 3的轉速、修整^ 3沿著箭頭”示方向上的移動速度）（步 驟ST9) ’並且實施基板的研磨。採用這種方式，將修整條 件的改變回授給修整器操作控制器。此外，根據上述的計 算結果來改變研磨的條件（例如，壓力腔mi至M内的壓 320815 27 200936316 ， 力）（步驟ST10)，並實施基板的研磨。採用這種方式，將 - 研磨條件的改變回授給用來控制頂環30的操作之頂環操 ' 作控制器。 儘管只有展示本發明特定的較佳實施例，應了解的是 可對其進行多種變化與修改，而不背離所附申請專利範圍 的範疇。 【圖式簡單說明】 第1圖係顯示具有傳統式修整裝置的研磨裝置之例 ❹子; 第2圖的示意剖面圖是顯示根據本發明的實施例之具 有修整裝置的研磨裝置的例子； 第3圖是根據本發明的實施例之具有修整裝置之研磨 裝置的示意俯視圖； 第4A圖的示意側視圖是顯示根據本發明的實施例之 修整裝置之修整器預處理裝置的例子； q 第4B圖是修整器預處理裝置的示意俯視圖； 第5圖是顯示根據本發明的實施例之在一般狀態下的 修整器預處理裝置的剖面圖； 第6圖是顯示根據本發明的實施例之當預處理修整器 時之修整器預處理裝置的剖面圖； 第7圖是顯示根據本發明的實施例之當清洗修整器時 之修整器預處理裝置的剖面圖； 第8圖是顯示根據本發明的實施例之在等待狀態下之 修整器預處理裝置的剖面圖； 28 320815 200936316 • 第9圖的俯視圖是顯示根據本發明的實施例之藉由修 - 整裝置來測量研磨墊輪廓的過程； - 第10圖是根據本發明實施例之基板研磨裝置的示意 圖， 第11圖的垂直剖面圖是顯示根據本發明的實施例之 用於基板研磨裝置之頂環的示意結構；以及 第12圖是顯示基板研磨過程中反映研磨墊之修整輪 鄭的流程圖。 ® 【主要元件符號說明】 1 研磨台 la 支撐軸 2 修整器手臂 3 修整器 4 研磨墊* 5 液體供應喷嘴 6 擺動機構 6-1 ' 6-2齒輪 7 馬達 8 修整器軸心 9 金屬層 10 渦電流感測器 11 旋轉連接器 12 控制器 13 顯示單元 14 馬達 15 動力傳輸機構 16 升降缸 17 研磨墊厚度偵測監視器 18 導線 20 修整器預處理裝置 21 基座 22 修整器預處理構件 23 修整器預處理部 24 清洗液噴射孔 25 修整器清洗刷 26 清洗液槽 27 支撐軸 28 密封機構 29 馬達 29 320815 200936316 30 頂環 31 頂環本體 — 32 扣環 33 壓力片 - 34 ,壓力片支撐構件 35 頂環驅動軸 36 萬向接頭 37 軸承滾珠 38 夾盤 39 夾盤固持構件 41 薄膜 41a 、 41b 、 41c 、 41d 環狀薄膜 ❹ 42、43、44、45、46 流體管道 48 壓縮空氣源 50 控制器 52 環狀薄膜固持件 100 研磨墊 102 研磨台 104 頂環 106 喷嘴 108 修整器 A、B、C、D、E、F、G 箭頭 a、b、c、d、e 預定點 CS卜 CS2、CS3、CS4、CS5 控制訊號 ❹ D卜D2 測量值 M卜 M2、M3、M4、M5 壓力腔 P卜 P2、P3、P4、P5 壓力控制器 Q 清洗液 SI、S2、S3、S4 感測器 Ή、T2、T3、T4、T5、T6、 Ί7厚度測量值 W 基板 Z卜 Z2、Z3、Z4、Z5、Z6、 Z7環狀區域 30 320815Preferably, the trimmer swinging mechanism of the present invention includes a motor including a position control motor or a pulse motor as a drive source for swinging the trimmer arm. The position amount (four) is set to be input according to the input. The number of pulses of the motor is used to measure the radial position of the dresser. Another object of the present invention is to provide a polishing apparatus for a substrate, comprising: a polishing table for supporting the polishing pad; a top ring configured to rotate the 4 plate, and rotating the substrate while the substrate is The force of the shape exerts pressure against the polishing pad, and the __ 财 被 舰 舰 ( ( ( re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re re Rotating its own shaft, and squeezing the grinding 塾 by the pre-stress S on the upper surface of the grinding 塾, and the 4-unit is connected to the arm that trims n; the oscillating mechanism of the dresser is set as the dresser The upper surface of the polishing pad is oscillated toward the grinding_radial; the (5) position measuring device is arranged to measure the position of the dresser on the upper surface of the grinding boring; the rate measuring device is set to measure the wire by repairing The cutting rate of the polishing pad; the measuring device of the polishing pad profile, from the grinding/cutting measured at a plurality of regions defined in the upper surface of the polishing crucible; to obtain the grinding_wheel!·卩, and the multi-servo domain test The collection is measured by repairing the position detection device; The operation controller is configured to control the operation of the dresser with 4 320815 11 200936316 '; and the pressure amount controller, which constitutes the grinding thickness of the polishing pad according to the profile of the polishing pad measured by the polishing pad profile measuring device. To control the amount of pressure applied to the regions of the substrate holding surface. According to the invention described above, the substrate can be suitably ground in accordance with the contour of the polishing pad. For example, feedback control can be implemented to make the shell ring The amount of applied pressure of the substrate holding surface corresponding to the thin portion of the polishing pad can be selectively adjusted to be higher than the applied pressure of the other regions. Another aspect of the present invention provides a substrate polishing method comprising: Pressing the rotating dresser against the upper surface of the polishing pad with a predetermined force to trim the polishing pad on the polishing table; during the polishing pad dressing, the dresser is facing the polishing pad on the upper surface of the polishing pad Radial oscillating ·, measuring the radial position of the dresser on the upper surface of the polishing pad; measuring the grinding defined at multiple areas in the upper surface of the polishing pad The cutting rate is obtained from the cutting rate of the polishing pad; the substrate is held by a top ring having a substrate holding surface divided into a plurality of regions; and when the substrate is rotated, the substrate is applied The topping is resistant to the upper surface of the polishing pad; and the substrate is pressed against the upper surface of the polishing pad, and the thickness of the polishing pad is controlled according to the thickness of the polishing pad according to the contour of the polishing pad to control the regions in the substrate holding surface According to the invention described above, the substrate can be suitably ground according to the contour of the polishing pad. For example, feedback control can be implemented such that the substrate holding surface of the top ring corresponds to the thinner portion of the polishing pad. The force of the pressing force in the region can be selectively adjusted to be higher than the wishing force of other regions. The cutting rate of the polishing pad in each region which is preferably oriented to the present invention is in the research of 12 320815 200936316 In the present invention, it is preferred that the plurality of neighbors in the region of the material are in the region; the grinding rate of the grinding crucible is the average of the cutting rate measurements at each branch. [Embodiment] The embodiments of the present invention will be described with reference to the accompanying drawings. Figs. 2 and 3 are only a polishing apparatus having a dressing device according to the present invention. As shown in Figure 2, the _ grinding device includes: ❹ 研磨 Grinding ' 1 ' supports the grinding 塾 4 on its upper surface; the top ring (not shown) is held on its lower surface such as semiconductor crystal A round substrate, and the substrate is pressed against the upper surface of the polishing crucible 4; and the trimmer 3 is configured to trim the upper surface of the polishing crucible 4. The polishing table is connected to the horse and rotates around its own axis as indicated by the arrow A in Fig. 2. The corrector 3 is connected to the horse at 14 via a power transmission mechanism 15 such as a gear (the trimmer 3 is further connected to the lift cylinder (16), and the trimmer 3 can be directed in the direction indicated by the arrow b. The lifting cylinder 16 moves vertically. During the dressing, the lifting cylinder 16 moves the dresser 3 downward, and the dresser 3 is repeatedly pressed against the grinding crucible 4 at a certain pressure, and at the same time, the motor 14 also trims the motor. H 3 is directed to the arrow c =: winding: its own axis is rotated. The trimmer 3 is connected to the dresser shaft to check the metal layer 9 as the surface of the dresser 3. The diamond particles (Fig. 9 If the metal is plated, etc.) The method is closely followed to the top of the metal layer table 1 and is provided with a trimming liquid supply nozzle 5, the honing 4. The motor 14 and the lifting (four) are operated by the trimmer controller (Fig. 1 320815 13 200936316: in order to The trimmer 3 is operated under the required trimming conditions, including the trimming machine 3 for the 'rotation speed of the trimmer 3. The pressure applied by the sanding pad 4, and the dresser 3 having the trimmer arm? Ganzi# The earthen mountain, which is surrounded by the swinging mechanism 6 The central axis 0 of the output is directed to the arrow D; the swinging mechanism 6 includes the teeth j Θ7Τ? The motor 29 as the driving source. The horse ', _6~2, and the ® ®, up to 29 can be used Position control motor or pulse motor. More specifically, motor 疋 motor. When the grinding table 1 fish repairs ^ Α using the ship motor or 疋 stepping through the 3 In state around their respective axes, the correction of theft 3 It will be lowered, and the diamond particles held against the upper surface of the polishing pad 4 will be pressed against the top surface of the polishing pad 4, and the upper surface of the pad 4 will be scraped by the grinding technique 4 and the relative motion to scrape the grinding 塾 4 ° 曰, the upper surface of the pad 4矣 ΓΓ 表面 ' ' ' ' ' ' ' ' ' ' ' ' 1 ' ' ' ' ' 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 The diameter 修 of the trimming H 3 on the upper surface of the fourth surface is trimmed by the oscillating mechanism 6 in this example. 2 == to move the radial traverse of the burr 4 to be sensed The coil is energized by a high-frequency current to induce an eddy current in the repair layer i, and according to the metal layer 9 A measure of the thickness of the abrasive crucible 4. The polishing pad 4 is made of an electrical material such as foamed polytetradecanoate (f_ed 320815 14 200936316, poiyurethane). Therefore, if the polishing pad 4 is thick, The eddy current induced in the metal layer 9 of the trimmed state 3 is small; if the polishing pad 4 is thin, the eddy current induced in the metal layer 9 is large. Therefore, the eddy current induced in the metal layer 9 is measured. The thickness of the abrasive crucible 4 can be determined. The eddy current sensor 10 has an output connected to the wire 18, and the wire 18 passes through the polishing table 1, the polishing table support shaft la, and is mounted on the polishing table support shaft 1a. A rotary connector at one end extends to the controller 12. The control unit 12 is connected to the display element 1.3. The full current sensor 1 〇, the controller 12, and the display unit 13 constitute an eddy current type pad thickness detecting monitor π. A slip ring (slip Hng) can be used instead of the rotary connector u. In this example, a single eddy current sensor is disposed under the polishing pad 4 as shown in Fig. 2. Another method is to provide a plurality of eddy current sensors under the polishing pad 4. In this case, as shown in FIG. 9, the upper surface of the polishing crucible 4 may be divided into a plurality of regions arranged along the radial direction of the polishing pad 4, and an eddy current sensor is disposed below the central portion of the individual region, In order to measure the thickness of the central part of the individual area. By using the eddy current pad thickness detecting monitor 17, the eddy current sensor 10 can detect the thickness variation of the polishing pad 4 according to the eddy current generated in the metal layer 9 of the trimmer 3; The eddy current value detected by the eddy current sensor 1A is displayed on the display unit 13, and the thickness of the polishing crucible 4 is measured. Based on the signal from the eddy current sensor 1〇, the controller can measure the cutting rate of the dresser 3 cutting or trimming the polishing pad 4. The measured cutting rate is fed back from the controller 12 to the trimmer operating controller of the control motor 14 and the lift cylinder 16, so that the cutting rate can be reflected in the trimming 15 320815 200936316 • conditions, such as the trimmer 3 The pressure applied by the lift cylinder 16 to the polishing pad 4, the moving speed of the dresser 3 in the radial direction on the upper surface of the polishing pad 4, and the rotational speed of the motor 14 rotating the dresser 3. In the present embodiment, the cutting rate of the polishing pad 4 trimmed by the dresser 3 is measured by the eddy current sensor 10. Alternatively, the cutting rate can be measured by detecting a change in the torque current of the motor 7 driving (rotating) the polishing table 1 or detecting the rotation of the motor 14 driving the (rotating) dresser 3. The change in the moment current; or the change in the vertical position of the contactor® surface of the dresser 3 in contact with the polishing pad 4; or a combination of these variations. The change in the vertical position of the contact surface of the dresser 3 can be detected by measuring the change in the vertical position of the trimmer 3. As described above, the radial position of the dresser 3 on the upper surface of the polishing pad 4 is detected by the number of pulses supplied to the motor 29 (e.g., position control motor or pulse motor). However, any means or means can be employed as long as it is capable of detecting the radial position of the dresser 3 on the upper surface of the polishing pad 4. 0 In the above-mentioned grinding device, due to the different properties of the individual dressers, replacing the dresser 3 with a new dresser may cause a change in the degree of cutting (ie, cutting rate) of the polishing pad 4, resulting in removal rate and on the substrate. A change in the abrasive profile of the film. After the dresser 3 is replaced with a new dresser, the new dresser is typically pre-treated by applying a new dresser to the polishing pad 4 at a specified pressure. However, the pretreatment process is tricky because it can have a detrimental effect on the grinding performance, especially at the beginning of the grinding of the substrate W. Therefore, in the present embodiment, the polishing apparatus has a dresser pretreatment apparatus 20, which is configured to perform pretreatment on the new finisher 3 after replacing the trimmer sold by the new trimmer 3 with 16 320815 200936316. No. The pretreatment device of the dresser is disposed at the free-position of the dresser 3, that is, at the end of the range of the dresser e outside the upper surface of the grinding crucible 4. 〇〇Wheeling Fig. 4A is a plan view showing the side of the dresser pre-processing apparatus 2 Τ: Γ other processing apparatus 20. Heart As shown in Fig. 4β, the dresser pretreatment skirt 20 has a dresser pre-placement (4) ❹ 2: ' which includes a base 21 and a trimming structure 2 attached to the base 21. The dresser pre-processing section 23 is cut by the branch _ 2?. Trimming = =::=Moving_ The direction indicated by the head F is rotated by the motor (not shown) along the material of the arrow (2). The dresser pretreatment member, pad 4 is the same, such as a foamed polyaminophthalate. ο The processing member 22 has a plurality of cleaning liquid cut-out holes 24, the opening of which is used to eject the cleaning liquid, and the cleaning liquid is supplied through the cleaning liquid supply pipe to violate the 'cleaning brush' 25 (like being supplied. The fascinating stretched trimming brush can be attached to the trimming portion 11 of the trimming portion 23. [The brush 25 is passed through the center of the dresser pretreatment member 22, and the pretreatment portion 23 is immersed in the periphery. Sealing mechanism 28Q to keep it moist. Along the branch _ outside the head. After the cleaning device Q is prevented from leaking out of the pretreatment portion 23 of the cleaning solution tank 26, the dresser is placed in the dresser pre-processing unit 23 320815 17 200936316 • The new trimmer 3 in the upper idle position is raised, and the lower surface of the dresser 3 is pressed with a predetermined force, as in the case of the first. In this state, the self-aligning axis rotates, and: will also move relative to the self in the direction indicated by the arrow C. Due to the relative movement of the trimmer pre-treatment between the pre-processor section 23 and the dresser 3, the trimmer 3 is pre-processed, and the upper surface of the homogenizer pre-processing section 23 is also trimmed. The device 3 is scraped off. The trimming is controlled by a controller (the pressure not applied on the drawing and the portion 23 of the dresser pre-processing unit 23 can also be rotated). Pretreatment of the dresser Pre-processing section 23. , in place of the simultaneous rotating dresser 3 and the dresser trimmer pre-existing in the base 21, 20 has the '^ motor sensing provided in the dresser pre-processing section 23 and FIG. (not shown). The eddy current sense trimmer pre-filled the von current sensor 10 is identical and is used to measure the thickness variation of the pretreatment member 22rzz' and to measure the advance, cutting rate under normal conditions of the trimmer. The measured cutting rate and the dresser 3 are normal, and the cutting rate of the waiter can be compared with each other. If the measured cutting pretreatment procedure. If the steam pre-treatment program has reached the pre-treatment end point, and the end of the processing unit 23 will follow the cutting rate that is just normal, then the dresser pre-set usually, repair the trimmer 3 to adjust the cutting rate. The cutting rate of the polishing pad 4 during the service life of the device 3 will be low in the dresser 3. However, the new gradual decrease with the wear of the corners of the diamond particles tends to cause a rapid decline in the cutting rate of the polishing pad 4 at the beginning of its service life until a section of 320815 1» 200936316 • Time The decline in the cutting rate will not be so severe. Therefore, it is possible to judge the end of the pre-processing of the trimmer 3 by the time point at which the decline in the cutting rate is not so severe. The cutting rate of the dresser pretreatment member 22 may be by a torque current for driving the motor 14 of the dresser 3 (see Fig. 2) or a motor for driving the final preprocessor portion 23 (on the The torque current, not shown, or a combination of these torque current values is measured. Alternatively, a trimming θ vertical position sensor (not shown) may be provided for measuring the vertical position of the dresser 3 during trimming so that the trimming of the dresser pretreatment member 22 may be based on the trimming The output signal of the vertical position sensor is measured. After the pre-processing of the dresser 3 is completed, at least one of the dresser 3 and the dresser pre-treating portion 23 is moved two in a direction away from each other so as to be on the lower surface of the dresser 3 and the dresser pre-processing member 22. A gap is formed between the surfaces as shown in Fig. 7. Thereafter, the dresser cleaning brush 25 is placed to contact the lower surface of the metal layer 9 of the diamond particles. In this state, the cleaning liquid q (for example, pure water, a chemical solution or a mixture of pure water, a cyclone solution, and nitrogen) is sprayed from the cleaning of the dresser pretreatment member 22 to the metal layer 9. 'Take the lower surface of the gold shoulder layer 9 by this. The second method such as thick slurry can be removed from the lower surface of the metal layer 9 after the pre-treatment procedure and the cleaning procedure are completed, and when the polishing apparatus is grinding the substrate, the lower surface of the metal layer 9 is immersed in the cleaning. Liquid ^, gt > as shown in Fig. 8, where D is in between; the whole °° 3 is rotated around its own axis' while the lower surface of the metal layer 9 is connected to 320815 19 200936316 - Touching trimming n The brush 25 is cleaned to keep the lower surface of the metal layer 9 moist and clean. The lower surface of the dresser 3 thus remains wet and clean. ... The dresser 3 which has been used to trim the polishing pad 4 for a long time has a reduced cutting rate. When the cutting rate is lowered to a predetermined level, it is judged that the dresser 3 has reached the end of its life, and the trimmer 3 is replaced with a new dresser. The dresser and the processing device 2G can be used to repair the life of the n3. In more detail, the trimmer pretreatment device 2 can have a trimmer service life determining portion which judges the end point of the service life of the dresser γ according to the cutting rate of the dresser pretreatment member 22, and judges that it has been used. To trim the end of the service life of the dresser 3 of the polishing pad 4, the dresser 3 is placed on the dresser pre-treatment, set 20, and the dresser pre-treatment member 22 is trimmed. The dresser life determination unit measures the cutting rate of the dresser pretreatment member 22, and judges whether or not the dresser 3 has reached the service life based on the measured cutting. During the pre-treatment of the newly replaced dresser 3 by the dresser pretreatment device 2, the torque current of the motor 14 for driving the dresser 3 may change as the f pretreatment progresses. For example, the torque of the motor 14 gradually decreases during the pre-processing process until the pre-processing process is near completion. Therefore, it is possible to detect the pre-processing end point of the dresser 3 by monitoring the motor of the motor 14. The finisher 3 trims the upper surface of the polishing pad 4 on the polishing table 1 after each time the polishing of one substrate is completed. The rotating dresser S and the stomach pressurize the upper surface of the polishing pad on the rotating polishing table 1 at a predetermined pressure. In more detail, as shown in FIG. 3, when the dresser 3 presses the trimming surface against the upper surface of the polishing pad 4, the trimmer 3 is 20 320815 200936316 'grinding along the arrow D. The radial direction of 4 oscillates or oscillates around the mid-inflammation axis, the 〇-overground. A dressing process of the polishing pad 4 is carried out by a plurality of oscillating motions of the dresser 3 on the grinding pad 4 (repetition = oscillating motion). The measurement of the rim of the trimmed burr 4 (the shape of the upper surface) is performed by measuring the thickness of the predetermined points 1 to e (i.e., the height of the upper surface) of the polishing pad 4 in a plurality of regions, and The plurality of regions are arranged in the radial direction on the upper surface of the polishing pad 4 as shown in Fig. 9. /σ ❹ (6) If you want to measure the thickness of the polishing pad 4 at five points from a to e in the order of the wei towel, you need high-speed data processing. Therefore, there is a need for an expensive data processor capable of implementing such high speed data processing. Therefore, in the present embodiment, only the thickness of the polishing pad 4 of one of a to e is measured in each trimming process. In other words, when each dresser 3 performs a trimming process, only one of the plurality of regions is measured to have a predetermined thickness of the polishing pad 4. For example, during the first trimming process = the thickness of the polishing pad 4 at point a, the point b at the second trimming process, the point c measured during the third trimming process, and the fourth trimming The d point is measured during the process and the e point is measured during the fifth trimming process. In this manner, the thickness of the polishing pad 4 of the polishing pad 4 at each of points a to e is measured after a plurality of dressing processes (in this example, five dressing processes for points a to e). In order to prevent the adverse effects of noise on the measurement, the thickness of the polishing pad 4 at each point a to e is measured a plurality of times, and the average of the measured values of the points a to e is calculated. The calculated average value is used as the thickness of the polishing pad 4 at each point: for example, in Figure 9, the thickness of the polishing pad 4 at the point a is measured multiple times and the average of multiple measurements It is considered to be the thickness at point a. Grinding 320815 21 200936316 * The thickness of the sanding pad 4 at point b is measured multiple times, and the average of multiple measurements is taken as the thickness at point b. The thickness of the polishing pad 4 at points c to e is also measured in the same manner. As described above, the thickness of the polishing pad 4 is repeatedly measured until a measurement value of the thicknesses of all the predetermined points in the plurality of regions is obtained. Therefore, after grinding a plurality of substrates and trimming the polishing pad 4 a plurality of times, the contour of the polishing pad 4 can be measured (or determined) from the measured values. By repeating this set of measurement steps several times, the average profile can be calculated from the thickness measurement. The resulting average profile is taken as the profile of the Grinding 4 and is reflected in the recipe. In the example of Fig. 9, after the five substrates are ground and the polishing pad 4 is trimmed five times, the thickness of the polishing pad 4 at points a to e is measured, thereby obtaining a profile of the polishing pad 4. This set of steps was repeated three times (i.e., the substrate was ground fifteen times) to use the average profile calculated from the measurement results as the outline of the polishing pad 4 and reflected in the abrasive formulation. Figure 10 is a schematic view of a substrate polishing apparatus according to an embodiment of the present invention. The finishing process of the polishing pad 4 is carried out as follows. The polishing table 1 is rotated in the direction indicated by the arrow A, and the dresser 3 is rotated in the direction indicated by the arrow C. The trimmer 3 applies pressure to the upper surface of the polishing pad 4 attached to the upper surface of the polishing table 1 with a predetermined force. In this state, the dresser 3 reciprocates the radial direction of the polishing pad 4 indicated by the arrow D by the rocking movement of the dresser arm 2 (see FIG. 3), thereby trimming the polishing pad 4 . The upper surface of the polishing pad 4 is divided into annular regions Z1 to Z7 disposed along the radial direction of the polishing pad 4. During the trimming process, the position of the dresser 3 on the central portion of the zones Z1 to Z7 is detected by the number of pulses supplied to the motor 22 320815 200936316 29 which is a position control motor or a pulse motor. Thereby, the thickness of the polishing pad 4 from the region to the central portion of Z7 is measured. The radial position of the dresser 3 on the upper surface of the grinding crucible 4 can be accurately detected by the number of pulses supplied to the motor 29. The symbols τι to T7 in Fig. 10 indicate the measured values of the thicknesses of the grinding turns 4 in the central portions of the respective regions Ζ1 to Ζ7, respectively. The trim profile of the polishing pad 4 is measured from the measured values Τ1 to Τ7 of the thickness of the polishing pad 4 in the regions Ζ1 to Ζ7. The rim is fed back to the dresser operation controller' and is reflected in the trimming conditions (eg, the dust force applied by the dresser 3 to the grinding bowl 4, the radial movement speed of the dresser 3 on the upper surface of the polishing pad 4, and the dresser 3) In the speed). This results in an ideal trim profile for the abrasive crucible 4. The symbol 30 denotes a top ring which is configured to hold the substrate W with its lower surface and rotate the substrate W around a rotation axis (not shown) in a direction indicated by an arrow g. The top ring 3 has a retainer ring 32 on the lower periphery thereof. A pressure chamber M1 is provided in the buckle 32 to the financial position. This special-purpose force chamber M1 to M4 is formed of a membrane 41. The lower surface of this thin crucible 41 serves as a support surface for supporting the substrate w. The pressure applied to the polishing crucible 4 by the substrate W contacting the pressure chamber can be controlled by adjusting the pressure in the pressure chamber M1 to medium. (4) The 疋 is set in the wide heart channel with each of the force chambers to the M4 fluid. These diligent controllers are controlled in accordance with the thickness values T1 to 77' representing the grinding 塾 4 in the region illusion to z7 to adjust the (4) force chambers formed by the film 41 to M4 _ (four). With these operations 23 320815 200936316, the pressure chambers Μ4 can be distributed according to the grinding 塾. In this way, the thickness of the film on the substrate w can be realized to provide a pressure profile, without being subjected to the grinding profile of the #4 (or the effect of the thickness of the pad 4 having a smaller thickness). In one example, the force of the other pressure chambers of the region (part) of the region (part) of the region (part) that selectively adjusts the force of the >5 force in the cavity corresponds to a larger measurement and value. The polishing rate (removal rate) can be averaged over the entire table 'so that the film on the substrate w is not limited to such a pressure adjustment side. However, the control is such that the pressure applied to each region: illumination; The feedback profile is obtained by performing the feedback. When the contour of the continuous 4 is adjusted, the contour of the pad changes with time. Therefore, when the substrate is ground, the grinding is incorporated into the variable of the pressure control. The change of # can also correspond to the pressure chamber with a smaller polishing pad 4 被 being selectively adjusted to a high:: value of the region (part) value of the region (part) pressure of other pressure chambers. Larger measurement profile Will be returned to the trimming II operation 4 'Finishing pad 4 repair: it: the whole rim. According to the ideal research == 塾 to adjust the pressure in the I force chamber Ml SM4. Therefore 'implemented on the substrate A more suitable grinding rim of the film. Fig. 11 is a vertical sectional view showing a schematic structure of a top ring used in substrate polishing according to an embodiment of the present invention. The top ring 30 has a top ring body 31' The sleeve 32 is fixed in the shape of a cylindrical container; and the buckle 32 is fixed to the lower end portion of the top ring body 31. An annular pressure piece 33 is disposed in the top ring body 31. The pressure piece 33 is inserted into the top ring body 31 and the pressure. The sheet support structure 320815 24 200936316 is between 34 pieces and supported by the lower surface around the inside of the top ring body 31. The top ring drive shaft 35 is disposed at the center of the upper surface of the top ring body 31. The top ring body 31 and The top ring drive shafts 35 are coupled together by a universal joint 36. The universal joint 36 includes: a spherical bearing mechanism having bearing balls 37 for tilting the top ring body 31 and the top ring drive shaft 35 relative to each other; The rotating transmission mechanism that will be pulled out The rotation of the ring drive shaft 35 is transmitted to the top ring body 31. The top ring body 31 is tiltable relative to the top ring drive shaft 35 and receives rotation of the top ring drive shaft 35 for rotation. In the inner space defined by the buckle 32, there is a chucking chuck 38. The chuck 38 is held on the lower surface of the pressure piece 33 by the chuck holding member 39. The top ring body 31 and the pressure piece 33 And the chuck 38 defines a pressure chamber M5 on the chuck 38. The pressure piece 33 is made of an elastic material such as rubber. As the pressure in the pressure chamber M5 rises or falls, the chuck 38 also drops or rises. The lower surface of the chuck 38 serves as a holding surface for holding the substrate W. The annular films 41a, 41b, 41c, and 41d are disposed on the lower surface of the chuck 38. The upper edge of the film 41a is inserted between the chuck 38 and the annular film holder 51 such that the film 41a is mounted on the central portion of the lower surface of the chuck 38. The upper edge of the film 41b is inserted between the chuck 38 and the annular film holder 51 such that the film 41b is mounted on the lower surface of the holder 38. This film 41b is disposed around the film 41a. The upper edges of the films 41c and 41d are inserted between the chuck 38 and the annular film holder 52 such that the films 41c and 41d are mounted on the peripheral portion of the lower surface of the chuck 38. The film 41c is disposed around the film 41b, and the film 41d is disposed around the film 41c. The pressure chambers M1, 25 320815 200936316 4ld, the substrates w and M2, M3 and M4 are formed by the films 41a, 41b, 41C and the chuck 38. Fluid conduits 42, 43, 44, 45 are connected to pressure chambers n M3, M4, respectively. These fluid conduits 42, 43, 44, 45 are via a pressure controller 1^? 2,? 3, 1^ is in fluid communication with a source of compressed air 48. Fluid conduit 46 is connected to pressure chamber ’ 5'0. This conduit 46 is also connected to compressed air source 48 via pressure controller Ρ5. The symbols illusion, sin, illusion, ❿ 4 4 in Figure 11 represent sensors, each of which is used to measure the fluid (compressed air) flowing through each of the fluid heads 42, 43, 44, 45. Dull, pressure fresh, in the above-mentioned _ ring 3G I system strength #- p5 to control the air pressure to be supplied from the compressed air source 48 to the pressure chamber milk via the fluid conduit 46, in order to control the top resistance on the entire surface of the substrate W The pressure applied to the upper surface of the polishing pad 4. In addition, the pressure controllers P1, p2, p3, p4 are operated to suppress the pressure of the pressure chambers M1, M2, M3, M4 from the compressed air source 48 through the fluid conduits 42, 43, 44, 45 to control The applied pressure on the region (portion) of the substrate W under the pressure chambers M1, M2, M3, M4. The velocity (pressure and flow rate) of the fluid (compressed air) flowing through the fluid conduits 42, 43, 44, 45 is measured by the sensors SI, S2, S3, S4, and these measured values D1 are sent to the controller 50. . Several types of data D2 (including the abrasive profile required to polish the substrate W and the measured polishing pad profile) are stored in the controller 50. The controller 50 is configured to calculate the pressure to be established in the pressure chambers mi, M2, M3, M4 during the polishing of the substrate w from the data D2 and the measurement data D1 to achieve the target polishing profile. Furthermore, the controller 50 is also configured to calculate the speed, pressure and flow rate of the 26 320815 200936316 compressed air to be supplied to the pressure chamber, and to send a control signal CS1 to the pressure controllers PI, P2, P3, P4, P5. CS2, CS3, CS4, CS5, in order to control the speed, pressure and flow of compressed air to be supplied to the pressure chambers M1, M2, M3 M4 M5 by controlling 'Yi P1 ' P2 ' p3 ' P4 ' P5 . Figure 2 is a flow chart showing the polishing profile of the abrasive crucible as measured above during the grinding of the substrate. The grinding wheel required for the film on the substrate is widely input to the controller 50 (step ST1). Thereafter, the polishing pad 4 is trimmed (step ST2). The thickness of the polishing pad 4 is measured at each area to obtain (i.e., measure) the thickness profile of the polishing pad 4 (step ST3). On the other hand, polishing of the substrate w is performed (step ST4), and the polishing rate of the film on the substrate W is measured to obtain polishing profile data (step ST5). The thickness profile of the polishing pad 4 obtained in step ST3 is compared with the ideal thickness profile of the polishing pad 4, and the polishing profile obtained in step ST5 is compared with the ideal polishing profile (step ST6). Next, it is judged from the comparison, ', σ of the step ST6 whether or not the difference between the known contour and the ideal contour is within the range of the predetermined threshold. When the difference is within the predetermined value (i.e., "yes"), the process ends. On the other hand, when the difference exceeds the predetermined value (i.e., "N0"), the calculation for changing the trimming condition and the grinding condition is performed (step coffee. The trimming condition is changed according to the above-mentioned 4 calculation results (for example, the dresser 3 is applied) The pressing force of each region Z1 to π on the upper surface of the polishing pad 4, the rotational speed of the dresser 3, and the moving speed of the trimming 3 in the direction indicated by the arrow (step ST9)' and the polishing of the substrate are performed. And returning the change of the trimming condition to the trimmer operation controller. Further, the grinding condition (for example, the pressure in the pressure chamber mi to M is 320815 27 200936316, force) is changed according to the calculation result described above (step ST10), and The polishing of the substrate is carried out. In this manner, the change in the polishing condition is fed back to the top ring operation controller for controlling the operation of the top ring 30. Although only the specific preferred embodiment of the present invention is shown, it should be understood It is possible to make various changes and modifications thereto without departing from the scope of the appended claims. [Simplified Schematic] Figure 1 shows a grinding device with a conventional dressing device. Example of the dice; FIG. 2 is a schematic cross-sectional view showing an example of a polishing apparatus having a dressing apparatus according to an embodiment of the present invention; and FIG. 3 is a schematic plan view of a grinding apparatus having a dressing apparatus according to an embodiment of the present invention. FIG. 4A is a schematic side view showing an example of a dresser pre-processing apparatus for a dressing apparatus according to an embodiment of the present invention; q FIG. 4B is a schematic plan view of the dresser pre-processing apparatus; FIG. 5 is a view showing the present invention according to the present invention; A cross-sectional view of a dresser pretreatment apparatus in a general state; FIG. 6 is a cross-sectional view showing a dresser pretreatment apparatus when a pretreatment trimmer according to an embodiment of the present invention; A cross-sectional view of a dresser pretreatment apparatus when cleaning a dresser according to an embodiment of the present invention is shown; Fig. 8 is a cross-sectional view showing a dresser pretreatment apparatus in a waiting state according to an embodiment of the present invention; 320815 200936316 • The top view of Fig. 9 is a process for measuring the profile of the polishing pad by means of a trimming device according to an embodiment of the invention; - Figure 10 is the root A schematic view of a substrate polishing apparatus according to an embodiment of the present invention, a vertical sectional view of FIG. 11 is a schematic structure showing a top ring for a substrate polishing apparatus according to an embodiment of the present invention; and FIG. 12 is a view showing a substrate polishing process Flow chart of the dressing wheel of the polishing pad. ® [Description of main components] 1 Grinding table la Support shaft 2 Dresser arm 3 Dresser 4 Grinding pad * 5 Liquid supply nozzle 6 Swing mechanism 6-1 ' 6-2 gear 7 Motor 8 Dresser Axis 9 Metal Layer 10 Eddy Current Sensor 11 Rotary Connector 12 Controller 13 Display Unit 14 Motor 15 Power Transmission Mechanism 16 Lifting Cylinder 17 Abrasive Pad Thickness Detector Monitor 18 Conductor 20 Dresser Pre-Processing Device 21 Base 22 Dresser Pre-Processing Member 23 Dresser Pre-Processing Section 24 Cleaning Fluid Injection Hole 25 Dresser Cleaning Brush 26 Cleaning Fluid Tank 27 Supporting Shaft 28 Sealing Mechanism 29 Motor 29 320815 200936316 30 Top Ring 31 Top Ring Body - 32 Buckle Ring 33 Pressure plate - 34, Pressure plate support member 35 Top ring drive shaft 36 Universal joint 37 Bearing ball 38 Chuck 39 Clamp Holding member 41 film 41a, 41b, 41c, 41d annular film ❹ 42, 43, 44, 45, 46 fluid conduit 48 compressed air source 50 controller 52 annular film holder 100 polishing pad 102 polishing table 104 top ring 106 nozzle 108 Dresser A, B, C, D, E, F, G Arrows a, b, c, d, e Predetermined point CS Bu CS2, CS3, CS4, CS5 Control signal ❹ D Bu D2 Measured value M Bu M2, M3 , M4, M5 Pressure chamber P Bu P2, P3, P4, P5 Pressure controller Q Cleaning fluid SI, S2, S3, S4 Sensor Ή, T2, T3, T4, T5, T6, Ί7 Thickness measurement W Substrate Z Bu Z2, Z3, Z4, Z5, Z6, Z7 annular area 30 320815