200935511 六、發明說明： 【發明所屬之技術領域】 此處所揭示者為一電漿蝕刻室’更具體地，是一種電 衆敍刻室’其能夠透過電漿银刻來移除餘留在已經過電 漿乾#刻之晶圓邊緣處的薄膜及沈積在該晶圓邊緣周圍 之粒子。 〇 【先前技術】 當製造一晶圓時，典型會形成一如圖案般堆疊的薄膜 遍佈整個晶圓表面至晶圓邊緣。此時，在用於電聚餘刻 整個晶圓頂部表面之乾式清潔製程期間所產生的殘留物 並未完全移除’而是如同粒子般地遍佈在晶圓邊緣處的 晶圓頂部、側邊及底部表面。 除200935511 VI. Description of the Invention: [Technical Field of the Invention] The disclosed herein is a plasma etching chamber 'more specifically, it is an electrician's syllabary chamber' which can remove the remaining remaining through the plasma silver engraving The film at the edge of the wafer and the particles deposited around the edge of the wafer. 〇 [Prior Art] When a wafer is fabricated, a pattern-like film is typically formed across the entire surface of the wafer to the edge of the wafer. At this point, the residue generated during the dry cleaning process used to electrocalize the entire top surface of the wafer is not completely removed' but is like a particle-like spread on the top and sides of the wafer at the edge of the wafer. And the bottom surface. except
子 圖 如果積聚在晶®邊緣處的薄膜及粒子餘留τ來而未移 ’可能導致所得到的半導體晶片嚴重損壞。 電漿钱刻室是用於移降曰 牙'餘留在日日圓邊緣處的薄膜及粒 °第5圖為相關技術 υ唄埤甲之電漿蝕刻室的部分 參照第5圖， 晶圓的晶圓夾盤 環形下部電極j j 12以及配置在上 氣體分配板1 4 用的電漿韻刻室包含一其上可裝载一 一沿著晶圓夾盤1 〇之邊緣形成的 對於下部電極11所配置的上部電極 4電極12内側的板13。 配置在板U下方，以引導一反應氣體 200935511 至晶圓邊緣。移動桿15配 I置在板13上方，以允許板13 上升及下降。 在具有上述結構的電_刻室中，當電力施加至上部 電,12下部電極11及晶圓夾盤10時’藉由在上部及 下部電極12 & U之間供應一反應氣體來產生電漿。產 生的電漿可移除堆積在晶圓邊緣的粒子或薄膜。 Ο ❹ 不過’習用的電漿蝕刻室具有一問題，那就是在將已 供應至介於板13及氣體分配板14間之—間隔空間中的 反應氣體引導至晶®邊緣的製程過程中，反應氣體在晶 圓邊緣處的壓力並不均勻。 也就是說，由於反應氣體在晶圓邊緣處的壓力依晶圓 邊緣的位置而有所不同，電_刻速度亦依晶圓邊緣的 位置而有不同，以致於利用電漿移除的粒子量或薄膜量 也會依據晶圓位置而不同。 另外，習用的蝕刻室具有一問題’就是氣體分配板14 的邊緣會受到電漿污染。 【發明内容】 技術問題 因此，考慮到上述問題，本文提供一種電漿蝕刻室， 其能夠使引導至晶圓邊緣處的反應氣體壓力在所有位置 皆保持均勻一致，並將氣體分配板受到電槳的污染減至 最小0 200935511 技術解決方案 根據-實施態樣’ 一電漿蝕刻室包含一氣體分配板， ，、引導反應氣體至晶圓邊緣；一板，其配置成與氣體分 配板隔開；以及緩衡器部分（bumper portions)，其在氣體 ‘ 分配板及板相面對表面的至少一個表面（at least one of . 〇pposlte surfaces)上突出，以允許移動至晶圓邊緣的反應 氣體壓力均勻。 Φ 電聚姓刻室可更包含上部及下部電極，部及下部電極 彼此對應地配置在晶圓邊緣處’並且晶圓設置在部及下 部電極之間。 緩衝器部分可交替地形成在氣體分配板及板上。 缓衝器部分可形成在氣體分配板或板的邊緣。緩衝器 部分可被製成環形形狀。 可藉由間隔物（spacer)在氣體分配板及板之間保持一 預定間隔。間隔物可具有1毫米（匪）之高度。 〇 缓衝器部分可具有0.6毫米之高度。 氣體分配板可更包含一屏蔽環，屏蔽環覆蓋氣體分西己 板邊緣的底部及側邊表面。 屏蔽環之寬度可為氣體分配板半徑的約1 5%至約 40%。 根據另一實施態樣，一電漿蝕刻室包含：一氣體分配 板’該氣體分配板在其底部表面形成有一凹槽；一擋板， 配置在氣體分配板之凹槽内側以與氣體分配板隔開，並 引導供應給凹槽的惰性氣體；以及缓衝器部分，緩衝器 200935511 部分在氣體分配板及擋板相面對表面的至少—袖主 丨回最面上 突出，以使惰性氣體壓力均勻。 根據又另一實施例，一電漿蝕刻室包含：一氣體八配 板’其引導一反應氣體至晶圓邊緣；以及一屏蔽環，其 形成在氣體分配板邊緣以防止氣體分配板之污染。在電 聚餘刻室中，屏蔽環之寬度可為氣體分配板半徑的約 15%至約 40%。 釔可塗佈在屏蔽環表面上。 有利的影響 如上文所述，在根據範例實施例的一電漿蝕刻室中， 緩衝器邛为形成在氣體分配板或板上，以便均勻地移除 沈積在晶圓邊緣處的薄膜或粒子。另外’保持該屏蔽環 之最佳寬度以減少進入介在氣體分配板及屏蔽環間之間 隔：的殘留物量，並可藉由減少氣體分配板之污染而節 省氣體分配板的更換成本。 【實施方式】 在下文中，將參照附圖詳細敘述一電漿蝕刻室。 /目為-電漿蝕刻室之部分剖面圖。第2圖為移動 柃下降後之電漿蝕刻室的部分剖面圖。第3圖為第^圖 的局°卩放大圖。第4圖為一氣體分配板之概略 平面圖。 第1及2圖’電漿餘刻室100包含室壁20、移動 200935511 寺〒 21 、 2也以及—板，其中該室壁20提供與外界隔離開來的 二二間/且藉由通過室壁20上部部分的—致動器（未顯 不）操作該移動桿21，以及該板形成在移動桿21下 方。該板包含上部板22及下部板23。 • 下部板23配置在上部板22的底部表面下方，且環形 、 4電極2 4沿著下部板2 3的邊緣配置。藉由第一螺 检241將上部電極24固定至上部板22。 φ 軋體分配板25配置在上部及下部板22及23下方，同 時與上部及下部板22及23隔開—預定間隔（space)。氣 體分配板25引導-反應氣體至一晶圓邊緣。此處，反應 乳體係供應給介在下部板23及氣體分配板25間之間 隔。氣體分配板25可由一絕緣材料製成，例如，氧化鋁 (Al2〇3) 〇 同時’下部板23可選擇性設置。當未設置下部板23 時，氣體分配板25可直接固定至上部板22。當上部板 ❹ 22朝下突出下部板23之厚度時，氣體分配板25可固定 至上部板22的突出部分。舉例來說，當未設置時下部板 23，上部板22可朝下突出移除的下部板23之厚度，或 ' 可不突出。 凹槽2 5 1形成在氣體分配板2 5之底部表面中心處，且 擋板26配置在凹槽25 1内側（inside)。擋板26允許分配 一供應至晶圓中心之惰性氣體（例如，氮氣）。擋板26可 選擇性設置。 屏蔽環27形成在氣體分配板25邊緣的底部及側邊表 200935511 面，以便吸附可能在蝕刻晶圓時產生的殘留物，例如， 聚合物。藉由第二螺栓252將屏蔽環27固定至氣體分配 板25’並屏蔽環27的介電常數可與氣體分配板25不同。 舉例來說，屏蔽環27可由介電常數丨丨的燒結釔所製成， • 而氣體分配板25可由介電常數8 4的氧化鋁所製成。介 • 電常數的差異可使由於電漿放電而在不必要部分上的電 荷積聚減少。 φ 屏蔽環27之寬度L1可設定為氣體分配板25之半徑 L2的約15°/。至約40。/^如果屏蔽環之寬度L1小於15%， 在间毯度電漿形成時，屏蔽環27可能無法覆蓋氣體分配 板25，且蝕刻殘留物可能進入氣體分配板25及屏蔽環 27之間的間隔中。如果屏蔽環27之寬度L1超過40%， 屏蔽環27可覆蓋氣體分配板25不必要覆蓋的部分，而 增加製造成本。 舉例來說’氣體分配板25之半徑L2可由約29〇毫米 © (刪）至約3〇〇毫米，而屏蔽環27之寬度L1可由約45毫 米至約116毫米。 釔（Ymium)可塗佈在氣體分配板25及屏蔽環27之表 面上。釔具有優越的聚合物吸附性質及出眾的化學抗 性。因此，釔允許在無化學修飾的情況下於—清潔製程 期間吸附及移除粒子。 環形的下部電極28配置在上部電極24下方，同時與 上部電極24隔開一預定間隔。晶圓夾盤32配置在下部 電極28内侧，且絕緣環3〇設置在晶圓夾盤32及下部電 200935511 極28之間。晶圓夾盤32電連接至一典型的電漿振盪器 (plasma 〇SCillator，未顯示）以接收電漿振盪器施加的高 頻，同時真空吸住裝載在晶圓夾盤32之頂部表面上的晶 圓。 上部電極24之外部直徑可與下部電極28相同。因此， 所產生的電漿形狀可能完全對稱，使得其可如同一低容 1 電漿振盪器（iow_capacity plasma 〇scillat〇r)般地運作。 〇 3曰圓夾盤32透過配置在晶圓夾盤32下方之絕緣層34 而與下部電極28完全絕緣。 參照第3圖，電漿蝕刻室100包含緩衝器部分36，緩 衝器邛刀36配置在下部板23及氣體分配板之間的間 隔中，反應氣體係通過此處供應。緩衝器部分36突出高 度Η ’雨度η小於該介在下部板23及氣體分配板^之Subgraphs If the film and particles remaining at the edge of the crystal® remain τ without being removed, the resulting semiconductor wafer may be severely damaged. The plasma money chamber is used to transfer the tooth decay and the film remaining at the edge of the sun circle. Figure 5 is a part of the plasma etching chamber of the related art armor. Refer to Figure 5, wafer The wafer chuck annular lower electrode jj 12 and the plasma processing chamber disposed on the upper gas distribution plate 14 include a lower electrode 11 formed thereon along which the edge of the wafer chuck 1 is mounted The plate 13 on the inner side of the electrode 12 of the upper electrode 4 is disposed. It is placed under the board U to guide a reactive gas 200935511 to the edge of the wafer. The moving rod 15 is placed above the plate 13 to allow the plate 13 to rise and fall. In the electric chamber having the above structure, when electric power is applied to the upper portion, the lower electrode 11 and the wafer chuck 10, 'a reaction gas is supplied between the upper and lower electrodes 12 & U to generate electricity. Pulp. The resulting plasma removes particles or thin films that build up on the edge of the wafer. Ο ❹ However, the conventional plasma etching chamber has a problem in that the reaction gas that has been supplied to the space between the plate 13 and the gas distribution plate 14 is guided to the edge of the crystal®, and the reaction The pressure of the gas at the edge of the wafer is not uniform. That is, since the pressure of the reactive gas at the edge of the wafer varies depending on the position of the edge of the wafer, the electric reticle speed is also different depending on the position of the edge of the wafer, so that the amount of particles removed by the plasma is used. Or the amount of film will vary depending on the wafer location. In addition, the conventional etching chamber has a problem that the edge of the gas distribution plate 14 is contaminated by the plasma. SUMMARY OF THE INVENTION Accordingly, in view of the above problems, there is provided a plasma etching chamber capable of maintaining a uniform pressure of a reaction gas directed to an edge of a wafer at all positions and subjecting the gas distribution plate to an electric paddle The pollution is minimized. 0 200935511 Technical Solution According to the embodiment - a plasma etching chamber comprises a gas distribution plate, for guiding the reaction gas to the edge of the wafer; and a plate configured to be spaced apart from the gas distribution plate; And bumper portions that protrude above at least one of 气体pposlte surfaces of the gas distribution plate and the facing surfaces of the plates to allow uniform reaction gas pressure to the edge of the wafer . The Φ electromagnetization chamber may further include upper and lower electrodes, and the lower and lower electrodes are disposed at the edge of the wafer corresponding to each other and the wafer is disposed between the portion and the lower electrode. The damper portions are alternately formed on the gas distribution plate and the plate. The bumper portion can be formed at the edge of the gas distribution plate or plate. The bumper portion can be made into a ring shape. A predetermined interval can be maintained between the gas distribution plate and the plate by a spacer. The spacer may have a height of 1 mm (匪).缓冲器 The damper portion can have a height of 0.6 mm. The gas distribution plate may further comprise a shielding ring covering the bottom and side surfaces of the gas separation plate. The width of the shield ring can range from about 15% to about 40% of the radius of the gas distribution plate. According to another embodiment, a plasma etching chamber includes: a gas distribution plate having a groove formed on a bottom surface thereof; and a baffle disposed inside the groove of the gas distribution plate to be associated with the gas distribution plate Separating and guiding the inert gas supplied to the groove; and the damper portion, the portion of the damper 200935511 protruding at least on the face of the gas distribution plate and the facing surface of the baffle surface to make the inert gas The pressure is even. In accordance with yet another embodiment, a plasma etch chamber includes a gas eight-plate that directs a reactive gas to the edge of the wafer, and a shield ring that is formed at the edge of the gas distribution plate to prevent contamination of the gas distribution plate. In the regenerative chamber, the width of the shield ring may be from about 15% to about 40% of the radius of the gas distribution plate. The crucible can be coated on the surface of the shielding ring. Advantageous Effects As described above, in a plasma etch chamber according to an exemplary embodiment, the buffer 邛 is formed on a gas distribution plate or plate to uniformly remove the film or particles deposited at the edge of the wafer. In addition, the optimum width of the shield ring is maintained to reduce the amount of residue entering between the gas distribution plate and the shield ring, and the cost of replacing the gas distribution plate can be reduced by reducing contamination of the gas distribution plate. [Embodiment] Hereinafter, a plasma etching chamber will be described in detail with reference to the accompanying drawings. / mesh - part of the cross section of the plasma etching chamber. Figure 2 is a partial cross-sectional view of the plasma etch chamber after the enthalpy has been moved. Fig. 3 is an enlarged view of the page of Fig. Figure 4 is a schematic plan view of a gas distribution plate. 1 and 2 'The plasma remnant chamber 100 includes a chamber wall 20, a moving 200935511 temple 〒 21, 2 and a plate, wherein the chamber wall 20 provides two or two compartments separated from the outside and passes through the chamber The actuator (not shown) of the upper portion of the wall 20 operates the moving rod 21, and the plate is formed below the moving rod 21. The plate includes an upper plate 22 and a lower plate 23. • The lower plate 23 is disposed below the bottom surface of the upper plate 22, and the annular, 4-electrode 24 is disposed along the edge of the lower plate 23. The upper electrode 24 is fixed to the upper plate 22 by the first screw 241. The φ rolling stock distribution plate 25 is disposed below the upper and lower plates 22 and 23, and is spaced apart from the upper and lower plates 22 and 23 by a predetermined space. The gas distribution plate 25 directs the reaction gas to the edge of a wafer. Here, the reaction milk system is supplied between the lower plate 23 and the gas distribution plate 25. The gas distribution plate 25 may be made of an insulating material such as alumina (Al2〇3) 〇 while the lower plate 23 is selectively disposed. When the lower plate 23 is not provided, the gas distribution plate 25 can be directly fixed to the upper plate 22. When the upper plate 22 projects downward toward the thickness of the lower plate 23, the gas distribution plate 25 can be fixed to the protruding portion of the upper plate 22. For example, when not provided, the lower plate 23, the upper plate 22 may project downwardly to the thickness of the removed lower plate 23, or 'may not protrude. A groove 2 5 1 is formed at the center of the bottom surface of the gas distribution plate 25, and the baffle 26 is disposed inside the groove 25 1 . The baffle 26 allows dispensing of an inert gas (e.g., nitrogen) that is supplied to the center of the wafer. The baffle 26 is selectively configurable. A shield ring 27 is formed on the bottom of the edge of the gas distribution plate 25 and on the side surface of the table 200935511 to adsorb residues that may be generated when the wafer is etched, for example, a polymer. The shield ring 27 is fixed to the gas distribution plate 25' by the second bolt 252 and the dielectric constant of the shield ring 27 can be different from that of the gas distribution plate 25. For example, the shield ring 27 can be made of a sintered crucible having a dielectric constant ,, and the gas distribution plate 25 can be made of alumina having a dielectric constant of 8 4 . The difference in electrical constant can reduce the accumulation of charge on unnecessary parts due to plasma discharge. The width L1 of the φ shield ring 27 can be set to about 15°/ of the radius L2 of the gas distribution plate 25. To about 40. /^ If the width L1 of the shield ring is less than 15%, the shield ring 27 may not cover the gas distribution plate 25 when the blanket plasma is formed, and the etching residue may enter the interval between the gas distribution plate 25 and the shield ring 27. in. If the width L1 of the shield ring 27 exceeds 40%, the shield ring 27 can cover a portion of the gas distribution plate 25 that is not necessarily covered, thereby increasing the manufacturing cost. For example, the radius L2 of the gas distribution plate 25 may be from about 29 mm to about 3 mm, and the width L1 of the shield ring 27 may be from about 45 mm to about 116 mm. Ymium can be applied to the surface of the gas distribution plate 25 and the shield ring 27.钇 has superior polymer adsorption properties and superior chemical resistance. Therefore, ruthenium allows adsorption and removal of particles during the cleaning process without chemical modification. The annular lower electrode 28 is disposed below the upper electrode 24 while being spaced apart from the upper electrode 24 by a predetermined interval. The wafer chuck 32 is disposed inside the lower electrode 28, and the insulating ring 3 is disposed between the wafer chuck 32 and the lower electrode 200935511. Wafer chuck 32 is electrically coupled to a typical plasma oscillator (not shown) to receive the high frequency applied by the plasma oscillator while vacuum is applied to the top surface of wafer chuck 32. Wafer. The outer diameter of the upper electrode 24 can be the same as that of the lower electrode 28. Therefore, the resulting plasma shape may be completely symmetrical such that it can operate as a low-volume plasma oscillator (iow_capacity plasma 〇scillat〇r). The 曰 3 曰 round chuck 32 is completely insulated from the lower electrode 28 by an insulating layer 34 disposed under the wafer chuck 32. Referring to Fig. 3, the plasma etching chamber 100 includes a damper portion 36 which is disposed in a space between the lower plate 23 and the gas distribution plate through which the reaction gas system is supplied. The damper portion 36 protrudes from the height Η ‘the degree of rain η is smaller than that of the lower plate 23 and the gas distribution plate.
間的間隔高度。舉例來說，氣體分配板25及下部板U 之間的間隔可為1毫米’而緩衝器部分36之高度可為 ⑩ 0.6毫米。 缓衝器部分36藉由阻擋反應氣體流動而使晶圓邊緣 處的反應氣體壓力均勻。緩衝器部分36可沿反應氣體之 行進方向交替形成在下部板23及氣體分配板25上（見第 3圖之彎曲箭頭)。這是為了加長反應氣體之流動路徑， 從而延長反應氣體留在下部板23及氣體分配板25間之 間1^中的時間。緩衝器部分36的數目可依反應氣體壓力 而改變。 如第4圖所不，緩衝器部分36可形成在氣體分配板 200935511 =邊緣，㈣環形形狀突出。複數個間隔物37以一預 定距離形成在氣體分配板25的頂部表面上，以在氣體分 配板25及下部板23之間提供間隔可。此時，緩衝器部 分36的高度小於間隔物之高度。雖然緩衝器部分％; 是環形形狀’但其形狀並不受限於此。也就是說，緩衝 器部分36可以是不同形狀’包含，例如矩形形狀。 ❹ 以下將敘述具有上述配置之電装姓刻室ι〇〇的操作。 利用擋板26來分配透過氣體分配板25所供應的惰性氣 體，以便在晶圓内側形成一無放電區域（〇n_disch零 邮〇11)。同時，供應給下部板23及氣體分配板25的反 應氣體移動至晶圓邊緣，並接著分別施加電Μ至上部及 下Ρ電極24及28以產生電聚。所產生的電聚會姓刻沈 積在從晶圓彡緣之頂部至底部表面部分上的粒子。 在亡述製程中’緩衝器部分36阻擋反應氣體流動，使 反應氣體在晶圓邊緣處的壓力於所有位置皆保持均勻， 從而產生均勾電漿。因此，所有位置的粒子蚀刻速度都 變得相同。另彳’由於屏蔽環27保持最佳寬度，而可有 效預防電漿所造成的氣體分配板污染。 如上文所述’緩衝器部分36形成在氣體分配板乃及 下部板23上’以使反應氣體壓力均句。以如上文所述之 相同方式’上述的緩衝器部分可形成在凹# 251與撐板 26相面對表面的至少一個表面上’以使供應給凹槽hi 之惰性氣體壓力均勻。 已參照範例實施例詳細敘述電漿钱刻室。不過，熟悉 10 200935511 此技術者須了解’在不偏離本發明之原理及精神的情況 下’可對這些實施例中做出變化，本發明範圍係定義在 後附申請專利範圍中且涵蓋其等效物。 產業應用 在一電漿蝕刻室中，沈積在晶圓邊緣之薄膜或粒子可 均勻地移除，並可藉由減少氣體分配板的污 v本，而郎省 氣體分配板之更換成本。The height between the intervals. For example, the spacing between the gas distribution plate 25 and the lower plate U can be 1 mm' and the height of the damper portion 36 can be 10 0.6 mm. The damper portion 36 makes the pressure of the reaction gas at the edge of the wafer uniform by blocking the flow of the reaction gas. The damper portion 36 is alternately formed on the lower plate 23 and the gas distribution plate 25 in the traveling direction of the reaction gas (see the curved arrow in Fig. 3). This is to lengthen the flow path of the reaction gas, thereby prolonging the time during which the reaction gas remains between the lower plate 23 and the gas distribution plate 25. The number of buffer portions 36 may vary depending on the pressure of the reactive gas. As shown in Fig. 4, the damper portion 36 may be formed on the gas distribution plate 200935511 = edge, (4) annular shape protruding. A plurality of spacers 37 are formed on the top surface of the gas distribution plate 25 at a predetermined distance to provide a space between the gas distribution plate 25 and the lower plate 23. At this time, the height of the damper portion 36 is smaller than the height of the spacer. Although the damper portion %; is a ring shape ', its shape is not limited thereto. That is, the buffer portion 36 can be of a different shape 'including, for example, a rectangular shape.操作 The operation of the electric device with the above configuration will be described below. The baffle 26 is used to distribute the inert gas supplied through the gas distribution plate 25 to form a non-discharge region (〇n_disch) 11 inside the wafer. At the same time, the reaction gas supplied to the lower plate 23 and the gas distribution plate 25 is moved to the edge of the wafer, and then electric wires are respectively applied to the upper and lower jaw electrodes 24 and 28 to generate electropolymerization. The generated electric party surname is deposited on the particles from the top of the wafer to the bottom surface portion. In the description process, the buffer portion 36 blocks the flow of the reaction gas so that the pressure of the reaction gas at the edge of the wafer remains uniform at all positions, thereby producing a uniform plasma. Therefore, the particle etching speeds at all positions become the same.彳' Because the shield ring 27 maintains the optimum width, it can effectively prevent contamination of the gas distribution plate caused by the plasma. The damper portion 36 is formed on the gas distribution plate and the lower plate 23 as described above to make the reaction gas pressure uniform. In the same manner as described above, the above-described damper portion may be formed on at least one surface of the concave surface of the concave surface 251 and the gusset 26 to make the pressure of the inert gas supplied to the groove hi uniform. The plasma pad chamber has been described in detail with reference to the exemplary embodiments. However, it is to be understood that those skilled in the art will understand that changes may be made in these embodiments without departing from the spirit and scope of the invention, and the scope of the invention is defined in the scope of the appended claims and Effect. Industrial Applicability In a plasma etch chamber, the film or particles deposited on the edge of the wafer can be removed uniformly, and the cost of replacing the gas distribution plate can be reduced by reducing the fouling of the gas distribution plate.
❹ 【圖式簡單說明】 第1圖為一電漿蝕刻室的部分剖面圖。 第2圖為一移動桿下降後之電衆蝕刻室的部分橫剖面 弟3圖為第1圖中 第4圖為一氣體分配板的概略平面圖 第5圖為根據相關技術領域中之一 剖面圖。 ？之冑漿蝕刻室的部 【主要元件符號說明】 Α 部分 Ll 屏蔽環寬度 L2 氣體分配板半徑 H 緩衝器部分高度 10晶圓夾盤 11 200935511 下部電極 上部電極 板 〇 氣體分配板 移動桿 室壁 移動桿 上部板 下部板 上部電極 氣體分配板 擋板 屏蔽環 下部電極 絕緣環 晶圓爽盤 絕緣層 緩衝器部分 間隔物 電漿蝕刻室 第一螺栓 凹槽 第二螺栓 12❹ [Simple description of the drawing] Figure 1 is a partial cross-sectional view of a plasma etching chamber. 2 is a partial cross-sectional view of a battery etch chamber after a moving rod is lowered. FIG. 4 is a schematic plan view of a gas distribution plate in FIG. 4 and FIG. 5 is a cross-sectional view according to the related art. . ? Portion of the etch chamber [Main component symbol description] Α Part L1 Shield ring width L2 Gas distribution plate radius H Buffer portion height 10 wafer chuck 11 200935511 Lower electrode upper electrode plate 〇 Gas distribution plate Moving rod wall movement Rod upper plate lower plate upper electrode gas distribution plate baffle shield ring lower electrode insulation ring wafer swash plate insulation layer buffer portion spacer plasma etching chamber first bolt groove second bolt 12