TW200913308A - Light emitting diode device and applications thereof - Google Patents

Abstract

A light emitting diode (LED) device and applications thereof are provided, wherein the LED device comprises a substrate, an epitaxy structure, a first electrode, a second electrode, and a patterned transparent electrode. The epitaxy structure set on the substrate is electrically connected to first electrode and the second electrode is electrically connected to the first electrode through the epitaxy structure. The patterned transparent electrode electrically connected the epitaxy structure with the first electrode has a plurality of fingers that are identified by at least one slot formed thereon. Each of these fingers is extended from the periphery of the first eletrode to the periphery of the second electrode. The width of each of the fingers is approximately proportional to its extending length.

Description

200913308 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a light emitting diode (LED) and its application, and in particular to a uniform current spreading capability and High luminous efficiency LED components and their applications. [Prior Art] 〇Lighting diode components (Li coffee Emitting diodes; LEDs) have low power consumption, low heat generation, long operating life, impact resistance, small size, fast response speed, and color light that emits stable wavelengths. Good photoelectric characteristics, so it is often used in the application of home appliances, instrument indicators, optoelectronic products. With the advancement of epitaxial technology and semiconductor process capability, the luminous efficiency of light-emitting diodes has made great progress in the stability and longevity of components. In general-purpose lighting and special lighting applications, there is a trend of rapid expansion. With potential. Referring to Fig. 1A, Fig. 1A is a cross-sectional view showing the structure of a light-emitting y-pole element 100 according to a conventional method. A conventional light-emitting diode element includes an n-type semiconductor layer 102, an active layer 103 and a P-type semiconductor layer 1〇4, and a forward electrode 105, which are sequentially epitaxially grown on the substrate 10, and the N-type semiconductor layer. The upper negative electrode 1〇6. The hole flow I is injected into the p-type semiconductor layer 1〇4 via the forward electrode 105, and the electron current flows through the back electrode 1〇6; the host N-type semiconductor layer 1〇2, both of which contain a double heterogeneous or multiple quantum well structure The active layer 1〇3 produces a quantum confinement phenomenon, increasing the radiation complex probability of the electron Xiao hole, # to increase its luminous efficiency. The p-type semiconductor layer of the light-emitting body structure has lower doping efficiency and the mobility of the 200913308 sub-carrier is poor. As a result, the sheet resistance is too high, and the hole flow can not be effectively distributed in the horizontal direction to the active layer 103. Therefore, the effect of current crowding tends to occur in the lower electrode of the forward electrode, and in addition to affecting the luminous efficiency of the active layer 103, the operational life of the element is also deteriorated. In order to solve this problem, the outermost layer of the epitaxial structure of the light-emitting diode element 1 is deposited, and a transparent conductive layer, such as oxidized steel tin (ITO) or oxidized (Zn0), is used to assist the flow of the hole. Horizontally spread to a region away from the forward electrode 105 to increase the effective light-emitting area (the region farther from the forward electrode occupies a larger proportion of the light-emitting area), thereby improving the luminous efficiency of the light-emitting diode. However, the shortest path of the current is concentrated in the vicinity of the forward electrode, which is still the path that the current prefers to pass, and the entire transparent conductive layer only ends to improve and does not completely solve the current aggregation effect. »Monthly Shame 1B Figure' Figure 1B shows the thermal image distribution of a conventional light-emitting diode. The conventional transparent conductive layer is a one-sided structure, and the current prefers to pass through the shortest path, so that it is concentrated between the first electrode iG5 and the second electrode 106, so that the llK is not etched by the ancient w ____

In addition, the refractive index of the transparent conductive layer is also one of the points. The semiconducting (10) crystal material f and the encapsulating material are refracting between the enthalpy of the luminous efficiency. There is a refracting index of 200913308. The efficiency is affected by the full inverse number, which will make the illuminating two. The effect of the light extraction effect of the polar body is reduced. In order to design - Lidan male to %, into the distribution efficiency and = electrode structure, further improve the luminous efficacy of the light-emitting diodes to accelerate the application of the light-emitting diodes and potential

SUMMARY OF THE INVENTION An object of the present invention is to provide a light-emitting diode element comprising a material, an epitaxial structure, a first electrode, and a second electrode, wherein the insect crystal structure is located on the substrate. The first electrode is worm:::. The first electrode is electrically connected to the first electrode through the remote crystal structure. The first electrode and the structure are electrically connected, and have at least one groove: = a plurality of fingers after the meaning. Each of the fingers extends from the edge of the first electrode toward the edge of the second electrode, and the length of each of the fingers is approximately proportional to the length of the disk. Another object of the present invention is to provide a light-emitting m member comprising: a base structure, a first electrode, a second electrode, a transparent electrode, and a Schottky (Sch magnetic y) rectifying interface m曰曰 structure on the substrate. The second electric eclipse, the genus, is electrically connected to the first electrode through the insect crystal structure. The transparent electrode electrically connects the first electrode to the insect crystal structure. The Schottky rectifier interface is located between the transparent electrode and the insect structure to define a plurality of fingers on the contact surface of the transparent electrode and the crystal and the structure, so that the fingers are from the edge of the first electrode toward the first The edge of the two electrodes extends, and the width of each of the fingers and the length of the extension thereof are approximately 200913308. The re-purpose of the present invention provides a light-emitting diode element, including: a substrate 'epitaxial structure, An electrode, a second electrode, and a transparent conductive layer. The serpentine structure is located above the substrate. The first electrode is electrically connected to the insect crystal structure. The first electrode is electrically connected to the first electrode through the insect crystal structure. The transparent conductive layer is electrically connected, (the first electrode and the n structure, wherein the transparent conductive layers respectively have refractive index gradients arranged in a power-down manner.

According to the above-mentioned preferred embodiment of the present invention, there is provided a light-emitting diode element-species (four) transparent electrode, wherein the patterned transparent electrode has a plurality of fingers, and according to the length of each current (four) of each finger (four) It has different widths 'finely adjusting the resistance value of each _ finger, forcing the current density flowing through each of the π π to be substantially the same. By patterning the transparent electrode, the current can be uniformly dispersed into the crystal structure of the light-emitting diode to improve the luminous efficiency of the light-emitting diode.

Another embodiment of the present invention provides a translucent Schottky rectifying interface for a light-emitting diode element, thereby defining a plurality of fingers for the through-polarity of the Schottky interface. According to the length of the current conduction path of each finger, it has different widths, so as to adjust each finger = resistance value, so that the current flowing through each finger and the corresponding resistance density ° By patterning the transparent electrode, the current can be uniformly distributed into the integrated insect crystal structure to improve the luminous efficiency of the light emitting diode. The semi-conductive re-embodiment is based on a plurality of transparent conductive layers of the crystallite refractive index of the light-emitting diode element to reduce the insect crystal effect of 200913308 to improve the light extraction efficiency of the light-emitting diode element. Therefore, the light-emitting diode provided by the present invention has better current spreading ability and light extraction efficiency, and can improve the components of the conventional light-emitting diode. [Embodiment] Please refer to FIG. 2A to FIG. 2C, 2A is a top plan view of a light emitting diode element 200 according to a preferred embodiment of the present invention. Fig. 2B is a cross-sectional view of the structure taken along line S21 in accordance with Fig. 2A. 2C is a cross-sectional view of the structure according to the second (the figure is shown along the tangential line S22. The light-emitting diode element 200 includes a substrate 201, an epitaxial structure 2〇2, a first electrode 203, and a second electrode 2〇. 4 and patterned transparent electrode 2〇5, wherein the substrate 201 may be alumina (Al2〇3), tantalum carbide ((iv)), oxidized (Zn〇) or Shixia substrate. The gallium carbide epitaxial structure 202 Located in the substrate 2〇1, in the preferred embodiment of the present invention, the epitaxial structure 202 includes a buffer layer 206, an n-type semiconductor layer 2〇7, which are sequentially epitaxially stacked on the substrate 201, The active layer 2〇8 and the p-type semiconductor layer 209. The patterned transparent electrode 2〇5 is located on the p-type semiconductor layer 2〇9. The first electrode 203 is located on the patterned transparent electrode 2〇5 and is patterned and transparent. The electrode 205 is electrically connected to the p-type semiconductor layer 2〇9 of the insect crystal structure 2〇2. The second electrode 204 is located on the n-type semiconductor layer 2〇7, and transmits the n-type semiconductor layer 207 of the epitaxial structure 202, and is active. The layer 208 and the p-type semiconductor layer 209 are further connected to the first electrode 203 via the patterned transparent electrode 205. In the present embodiment, The transparent electrode 205 has at least one groove 200913308. The grooves, for example, the grooves 210b' 210c, 210d, 21〇e, 210f, 2i〇g, 2i〇h* 丨 are used to extract a plurality of fingers such as fingers 211 a, 211 b, 211c, 211d, 211e, 211f, 211g, 211h, and 211i, wherein each of the #曰-shaped portions 211a, 211b, 211c, 211d, 211e, 211f, 211g, 211h, or 211i is composed of the first electrode 2 The edge 212 of the crucible 3 extends toward the edge 213 of the second electrode (as shown in Fig. 2B). For example, in the present embodiment, each of the buckle portions 211a, 211b, 211c, 211d, 211e, 211f, 211g, 〇21111 or 2111 are radially extended from the edge 212 of the first electrode toward the edge 213 of the second electrode 204 and around the edge 213 of the second electrode 2〇4. Each of the fingers 211a, 211b, 211c The width of 211d, 211e, 211f, 211g, 211h or 211i is approximately proportional to the length of its extension. For example, in the present embodiment, the finger 211a has the longest extension distance [1, thus having the largest width W1; The extending distance L2 of the finger 211e is the shortest and the width W2 is also the narrowest. The finger 2Ua has the lowest sheet resistance and contact resistance, while the g^21 le has the highest sheet resistance and contact resistance, which forces a larger current to pass through the fingers. 211a this path, and no longer only likes the shortest path through the finger 211e, according to this design criterion, the simple mathematical model can be simulated to make the finger 211& and the finger 211e have the same current density. A finger 211b, 2Uc, 211d, 211f, 211g, 211h or 211i can also be designed according to this criterion, so that each finger can achieve the purpose of uniformizing the current density. Since each of the fingers 21 la, 211b, 21 lc, 21 Id, 21 le, 211f, 211g, 211h or 211i is respectively grooved by a groove, for example, a groove 21〇b, 200913308 210c, 21〇d, 210e , 210f, 210g, 210h or 210i are isolated, so the extension distance of each of the fingers 211a, 211b, 211c, 211d, 21 le, 211f, 21 lg, 211h or 211i can be regarded as the first electrode 203 and the second The conduction path of the current when the electrode 204 is turned on. . In a preferred embodiment of the invention, the current flowing through each of the fingers 211a, 211b, 211c, 211d, 211e, 211f, 211g, 211h or 211i and its width and current conduction path may be represented by a mathematical formula ( Equation i) represents: 11/12=(W1/W2) (Ll/2xRsh+pco/Ll)/(L2/2xRsh + pC0/L2) (Formula 1) wherein the first current flowing through the finger 211a is 11 Said; the second current flowing through the finger 211e is indicated at 12. Rsh is a sheet resistance 'pc' of the patterned transparent electrode 2〇5. The contact resistivity between the patterned transparent electrode 205 and the epitaxial structure 202 is used. Further, in order to enhance the light extraction efficiency of the light-emitting diode element 2, the patterned transparent electrode 205 may be composed of a plurality of materials having different refractive indices. In a preferred embodiment of the present invention, the plurality of materials constituting the patterned transparent electrode 2〇5 include indium oxide (In2〇3), tin oxide (Sn〇2), indium tin oxide (_, zinc oxide). Zn〇), oxidized (tetra) (Cd2Sn〇4), nitrided (ΤιΝ), doped indium zinc oxide (IZ〇), doped aluminum zinc oxide (Az〇), doped gallium zinc oxide (GZO), doped钇Gallium zinc oxide (GZ〇Y) or any combination of the above materials. The patterned transparent electrode 2〇5 has a refractive index gradient arranged in an atomic manner, thereby increasing the difference of the refractive index 200913308 of the optical interface of the insect crystal semiconductor structure. The function of reducing the total reflection of the light is combined with the current dispersion function of the patterned transparent electrode 203, and the luminous efficiency and the light extraction rate of the light-emitting diode element 200 can be greatly improved. Referring to FIGS. 3A to 3C, 3A is a plan view showing a structure of a light-emitting diode element 300 according to a second preferred embodiment of the present invention. FIG. 3B is a cross-sectional view of the structure taken along line S31 according to FIG. 3A. The figure is based on the structure shown by the tangential line S32 in Figure 3C. The structure of the light-emitting diode element 200 of FIGS. 2A to 2C is similar to that of the light-emitting diode element 300, and the difference lies in the electrode arrangement of the light-emitting diode. In this embodiment, the light-emitting diode 2 The polar body component 300 includes a substrate 301, an epitaxial structure 302, a first electrode 303, a second electrode 304, and a patterned transparent electrode 305. The substrate 301 may be aluminum oxide (Al2〇3), tantalum carbide (SiC). a gallium nitride (GaN), zinc oxide (ZnO) or tantalum substrate. The epitaxial structure 302 is over the substrate 301. In a preferred embodiment of the invention, the epitaxial structure 302 comprises sequential epitaxy The buffer layer 306, the n-type semiconductor layer 307, the active layer 308, and the p-type semiconductor layer 309 are stacked on the substrate 301. The patterned transparent electrode 305 is located on the p-type semiconductor layer 309. The first electrode 303 is located at the patterned transparent electrode. 305 is electrically connected to the p-type semiconductor layer 309 of the epitaxial structure 302 by the patterned transparent electrode 305. The second electrode 304 is located on the substrate 301 with respect to one side of the epitaxial structure 302. The second electrode 304 and through the substrate 301, the buffer layer 306 of the epitaxial structure 302, η The semiconductor layer 307, the active layer 308, and the p-type semiconductor layer 309 are electrically coupled to the first electrode via the patterned transparent electrode 305. 12 200913308 In the present example, the patterned transparent electrode 3〇5 has at least one strip. Grooves, for example, grooves 3H)a, 310b, 3l〇c, 31〇d, 3i〇e, tear, 3i〇g, 310h 310ι, 310j, 310k, 3101, 3i〇m '31〇n, 31〇. Or 31〇p, to define a plurality of fingers, such as fingers 3Ua, 3nb, 3iie, 3iid, 311e 311f'311g, 311h, 311i, 3lij, 311k, 31u, 311m, 311n, 311A and 3Up. Each of the fingers 3Ua, mb, 3iic, 311d 311e, 311f, 311g, 311h, 311i, 311j, 311k, 31U,

311m, 311n, 3Uo or 311p is projected from the edge 312 of the first electrode of the patterned transparent electrode 305 by the first electrode 3〇3 toward the edge 313 of the second electrode 3〇4. For example, in the present embodiment, each of the fingers 3Ua, 3Ub, 3iic, 311d, 311e, 311f, 311g, 311h, 311i, 311j, 311k, 311, 311m, 3Un, 3U, or 311P is first The edge 312 of the electrode extends radially toward the edge 313 of the patterned transparent electrode 305. Wherein the width of each of the fingers 3Ua, 3Ub, 3Uc, 3Ud, 3, 311f, 311g, 311h, 311i, 311j, 311k, 311, 311m, 311n, 311, or 311p of the patterned transparent electrode 305 The length is approximately proportional. For example, in the present embodiment, the finger portion 3Ua has the longest extending distance L3 and thus has the largest width W3; the extending distance l4 of the finger portion 3Ue is the shortest and the width W4 is also the narrowest. The design is such that the fingers 3Ua have the lowest sheet resistance and contact resistance, while the fingers 31 le have the highest sheet resistance and contact resistance, which can force a larger current to pass through the path of the fingers 311a. It is no longer just like the shortest path through the finger 3Ue. According to the simple design of the mathematical model, the current density of the finger 13 200913308 part 311 a and the finger part 311 e can be made the same, and each of the other fingers The portions 311b, 311c, 311d, 311f, 311g, 311h, 311i, 311j, 311k, 3111, 311m, 311n' 311o or 311p can also be designed according to this criterion, so that each finger portion achieves the purpose of uniformizing the current density. Since each of the fingers 311a, 311b, 311c, 311d, 311e, 311f, 311g, 311h, 311i, 311j, 311k, 3111, 311m, 311n, 3li, or 311p is respectively grooved, for example, a groove 3丨〇a, 3丨〇b, 3丨, 310d, 310e, 310f, 310g, 310h, 310i, 310j, 310k, 31〇 310m, 310n, 310o or 310p are isolated, so each finger 3Ua, The extending distance of 311b, 311c, 311d, 311e, 311f, 311g, 311h, 311i, 311j, 311k, 3111, 311m, 311n, 311o, or 311p can be regarded as the current when the first electrode 303 and the second electrode 304 are turned on. Conduction Path β In the preferred embodiment of the present invention, each of the fingers 311a, 311b, 311c, 311d, 311e, 311f, 31g, 311h, 311i, 311j, 311k, 3111, 311m, 311n The current of 311〇 or 3llp and its width and current conduction path can be expressed by a mathematical formula (Formula 2): 13/14= (W3/W4) (L3/2xRsh+ Pc〇/L3)/ (L4/2xRsh + Pco/ L4) (Formula 2) wherein the first current flowing through the finger 311a is denoted by I3; the second current flowing through the finger 31 le is denoted by 14. Rsh is the sheet resistance of patterned transparent electrode 3〇5, pc. The contact resistivity between the patterned transparent electrode 3〇5 and the epitaxial structure 3〇2. Further, in order to enhance the light extraction efficiency of the light-emitting diode element 300, the patterned transparent electrode 305 may be composed of a plurality of materials having different refractive indices. In a preferred embodiment of the present invention, the plurality of materials constituting the patterned transparent electrode 305 may include indium oxide (In2〇3), tin oxide (Sn〇j, indium tin oxide (ITO), and zinc oxide (Zn0). ), cadmium tin oxide (Cd2Sn〇4), titanium nitride (ΤιΝ), doped indium zinc oxide (IZ〇), doped aluminum zinc oxide (AZ〇), doped gallium oxide (GZO), doped 钇Gallium oxidation (GZ〇Y) or any combination of the above materials. The patterned transparent electrode 3〇5 has a refractive index gradient arranged in a power-down manner, thereby reducing the effect of total reflection of light. Combined with the above-described patterned transparent electrode 305 The current dispersion function can greatly improve the luminous efficiency and the light extraction rate of the light-emitting diode element 3. Referring to FIGS. 4A to 4C, FIG. 4A is a third preferred embodiment of the present invention. A top view of the structure of a light-emitting diode element 400 is shown. Figure 4B is a cross-sectional view of the structure taken along line S41 according to Figure 4A. Figure 4C is a structural section shown in Figure 4A along the line S42. Figure, wherein the light-emitting diodes 200 of the 2A to 2C are combined Similar to the structure of the light-emitting diode element 400, the difference is that the transparent electrode structure of the light-emitting diode is different. The light-emitting diode element 400 includes: the substrate 401, the epitaxial structure 402, the first electrode 403, and the second electrode 404 are transparent. The electrode 405 and the Schottky rectifying interface 410. The substrate 401 may be alumina (a1203), carbonized stone (Sic), gallium nitride (GaN), zinc oxide (ZnO) or tantalum substrate. Then, it is located above the substrate 401. In a preferred embodiment of the present invention, the dormant structure 402 includes 15 200913308 408 and p-type semiconductor buffer layer 406, n which are sequentially stacked on the substrate 4〇1. The semiconductor layer 4〇7, the active layer 409, and the transparent electrode 405 are located on the p-type semiconductor layer 4〇9. The first electrode 4〇3 is located on the transparent electrode 4〇5, and is transparent and transparent by the transparent electrode structure. The P-type semiconductor layer 409 is electrically connected. The second electrode is located on the n-type semiconductor layer 407 and passes through the n-type semiconductor layer 4 of the mycelium structure 4Q2, the active layer 408 and the p-type semiconductor layer, and then The transparent electrode is completely coupled to the first electrode 403.

The Schottky rectification interface 410 is located between the transparent electrode 4〇5 and the P-type semiconductor layer 4G9 of the epitaxial structure 4〇2 to define a plurality of fingers at the contact surface of the transparent electrode and the insect crystal structure 402. For example, the fingers 4Ua, 4iib, 411c, 411d, 411e, 411f' 411g, 411h, and 411i. The fingers 411a, 411b, 411c, 411d, 411e, 411f, 411g, 411h, and 41li are respectively projected by the first electrode 4〇3 on the edge 412 of the first electrode of the transparent electrode 4〇5, to the second The edge 413 of the electrode 404 extends. For example, in the present embodiment, each of the fingers 411a, 4Ub, 411c, 411d, 411e, 4Uf, 411g, 411h or 4m is radially from the edge 412 of the first electrode to the second electrode 4〇4 The edge 413 extends and surrounds the second electrode 404. The width of each of the fingers 41ia, 411b, 411c, 41 Id, 41 le, 411f, 411g, 411h or 411i is approximately proportional to the length of its extension. For example, in the present embodiment, the finger portion 411a has the longest extending distance L5 and thus has the largest width W5; the finger portion 4Ue has the shortest extending distance and the narrowest width W6. In the present embodiment, the 'Schottky rectifying interface 41' is formed by a close contact with the patterned semiconductor layer 41 having a high transmittance 16 200913308 rate. The patterned layer 410a is preferably deposited on the p $ semiconductor layer 409 by a vapor deposition or deposition process to grow a metal oxide, a metal nitride, a metal oxynitride, a semiconductor oxide, a semiconductor nitride or a semiconductor oxynitride. And formed by patterning. In a preferred embodiment of the present invention, the patterned layer 41 is preferably, for example, nickel oxide (Nix〇Y), indium oxide (1 to 〇3), tin oxide (SnO), zinc oxide (ZNO). ), bismuth dioxide (Si〇2), tantalum nitride (Μ#*), nitrous oxide oxide (SiOxNy), gallium dioxide (Ga2〇3) and other materials. The transparent electrode 405 is filled and overlaid on the patterned layer 41 〇a. Therefore, when the first electrode 403 is electrically connected to the first electrode 404, the conduction path of the current is blocked by the patterned layer 410a, and along the fingers 411a, 411b, 411c, 411d defined by the patterned layer 41A. , 411e, 411f, 411g, 411h, and 411i are evenly dispersed. The design is such that the fingers 411a have the lowest sheet resistance and contact resistance, while the fingers 411e have the highest sheet resistance and contact resistance, thus forcing a larger current to pass through the path of the fingers 4lia instead of It is only like to pass the shortest path of the finger 411 e. According to the simple design of the mathematical model, the current density of the finger 411a and the finger 4Ue can be made the same, and each of the other fingers 411b, 411c 41 Id, 411f, 411 g, 411 h or 411 i can also be designed according to this criterion, so that each finger reaches the purpose of uniformizing the current density. Referring to FIGS. 5A to 5C, FIG. 5A is a plan view showing a structure of a light emitting diode element 500 according to a fourth preferred embodiment of the present invention. The brother 5 B is based on the structural plane shown by the tangential line S 51 along the tangential line S 51 . The 5 C picture is based on the structure of the 苐5 A map along the tangential line S 5 2 and the structure of the structure 17 200913308. The structure of the light-emitting diode element 400 of the '4A to 4C' is similar to that of the light-emitting diode element 500' differs in the structure of the Schottky rectifier interface. The light-emitting diode element 500 includes a substrate 501, an epitaxial structure 502, a first electrode 503, a second electrode 504 transparent electrode 505, and a Schottky rectifying interface 510. The substrate 501 may be alumina (ai2〇3), tantalum carbide (si〇, gallium nitride (GaN), zinc oxide (ZnO) or tantalum substrate.

Epitaxial structure 502 is then over substrate 501. In a preferred embodiment of the present invention, the epitaxial structure 502 includes a buffer layer 506, an n-type semiconductor layer 507, an active layer 508, and a p-type semiconductor layer 509 which are sequentially epitaxially stacked on the substrate 5A. The transparent electrode 505 is located on the transparent electrode 505 of the p-type semiconductor layer, and is electrically connected to the germanium-type semiconductor layer 5G9 of the insect crystal structure 5〇2 by the transparent electrode 5〇5. The second electrode is located on the n-type semiconductor layer 507, and passes through the n-type semiconductor layer 5〇7 of the epitaxial structure 502, the active layer 508, and the p-type semiconductor layer 5G9, and is electrically connected to the first electrode via the transparent electrode. . The Schottky rectification interface 510 is located between the transparent electrode 505 and the epitaxial structure 5〇2 body layer' to define a plurality of fingers, such as fingers, at the contact surface of the transparent electrode 5〇5 and the insect crystal structure. 5m, pass, 511c, 511d, 511e, 5Uf, 5-, -, 511d 51Π are respectively from the edge 5i of the first electrode 5〇3: 51 = ^ ςι·3 Ζΐ the side of the body-one electrode 504

The edge 513 extends. For example, in the actual W ^ 母 mother - finger 511a, 18 200913308 . 511b, 511c, 511d, 511e, 511f, 511g, 511h or 511i is radially from the edge 512 of the first electrode to the second electrode The edge 513 of the 504 extends and surrounds the second electrode 504. And the width of each of the fingers 511a, 511b, 511c, 511d, 511e, 511f, 511g, 5ilh or 511i is proportional to the length of its extension. For example, in the present embodiment, the finger portion 511a has the longest extending distance L7 and thus has the largest width W7; the extending distance L8 of the finger portion 511e is the shortest and the width W8 is also the narrowest. f } In the present embodiment, the Schottky rectifying interface 51 is formed by the doping pattern 51 doped in the lip-type semiconductor layer 509 (the contact with the p-type semiconductor layer 5 〇 9). Preferably, 510a is formed by surface doping in the p-type semiconductor layer 509 by ion implantation or diffusion by a doping process to lower the equivalent concentration of the surface of the partial p-type semiconductor.

In this embodiment, the doping process includes the steps of: forming a patterned screen oxide on the surface of the germanium-type semiconductor, and forming a Schottky interface 5G9 to form the Schottky interface 5U) Part of the surface is exposed, and then the doping element is driven into the surface of the P-type semiconductor by ion implantation or diffusion process, and then the shielded silica dioxide is removed to form a blend as shown in the &Fig. 5C. Miscellaneous pattern 51〇a. Therefore, when the first electrode 503 and the second electrode 5〇4 are turned on, the conduction path of the current is blocked by the patterned layer 51, and the fingers 511a, 511b, and 511C defined along the patterned layer are filled. 511d, 511e, 511, 511g, 511h, and 51Π are evenly dispersed. This design allows the finger 5 to have the lowest sheet resistance and contact resistance, while the finger 5116 has the highest sheet power 19 200913308 resistance and contact resistance 'so can force a larger current like to pass the finger 5Ua Turning to 'the family only wants to refer to the finger (four) 5 仏 this shortest path 'design according to this (four) through a simple mathematical model simulation, can make the 部 511a and the finger 511e the same turbulence density, the rest of each finger =b, 511c, 511d, 511f, 5Ug, 5m or 5lH can also be designed according to this criterion, so that each finger reaches the purpose of uniformizing the current density.

Referring to Figs. 6A to 6C, Fig. 6A is a view showing a light emitting diode element 6〇〇 according to a fifth preferred embodiment of the present invention. Fig. 6B is a cross-sectional view taken along line S61 according to Fig. 6A. Figure 6C is a cross-sectional view of the structure taken along line S62 in accordance with Figure 6A. The structure of the light-emitting diode element 4A of FIG. 4A to FIG. 4C is similar to that of the light-emitting diode element 600, and the difference is that the mode and position of the Schottky interface are different, and the light-emitting diode 4〇 〇 is an electrode configuration of a horizontal structure and the light-emitting diode 600 is an electrode configuration of a vertical structure. The light-emitting diode element 600 includes a substrate 601, a crystal growth structure 602, a first electrode 603, a second electrode 604 transparent electrode 605, and a Schottky rectification interface 610. The substrate 601 may be oxidized (a12〇3), carbonized stone (si〇, gallium nitride (GaN), oxidized (ZnO) or tantalum substrate. The crystallite structure 602 is located on the substrate 601. In the preferred embodiment of the present invention, the epitaxial structure 602 includes a buffer layer 606, an n-type semiconductor layer 607, an active layer 608, and a p-type semiconductor layer 609 which are sequentially epitaxially stacked on the substrate 601. The transparent electrode 605 The first electrode 603 is located on the transparent electrode 605, and is electrically connected to the P-type semiconductor layer 609 of the epitaxial structure 602 20 200913308 by the transparent electrode 605. The second electrode 604 is located on the substrate 6 〇1, on one side of the epitaxial structure 602. The second electrode 6〇4 transmits through the substrate 601, the buffer layer 606 of the dormant structure 602, the n-type semiconductor layer 607, the active layer 608, and the p-type semiconductor layer 609 And electrically connected to the first electrode via the patterned transparent electrode 6〇5. The Schottky rectifier interface 610 is located between the transparent electrode 605 and the germanium-type semiconductor layer 609 of the insect crystal structure 602, and is used for the transparent electrode 6〇. The contact surface between 5 and the epitaxial structure 602 defines a plurality of fingers, for example Fingers 6丨丨&, 611b, 611c, 611d, 611e, 611f, 611g, 611h, 611i, 611j, 611k, 6111, 611m, 011n, 011o, and όΐΐρ. Among these fingers 611a, 611b, 611c, 611d, 611e, 611f, 611g, 611h' 61Η, 611′′, 611]<:, 611 611111, 61111, 011〇 or 011 are projected by the first electrode 603 on the edge 612 of the first electrode of the transparent electrode 605, respectively. And extending toward the edge 613 of the second electrode 604. In addition, each of the fingers 611a, 611b, 611c, 61 Id, 61 le, 611f, 611g, 611h, 611i, 611j '611k, 611 611m, 611n, 611o or The width of 611p is proportional to the length of its extension. For example, in the present embodiment, the finger 611a has the longest extension distance L9' and thus has the largest width W9; the extension distance L10 of the finger 611e is the shortest, the width thereof W10 is also the narrowest. In the present embodiment, the patterning layer 61〇a is formed by the same method as the third embodiment (refer to FIGS. 4A to 4C), and the transparent electrode 6〇5 is filled and covered. Above the patterned layer 61〇a. Therefore when the first electrode 6〇3 and the second When the pole 604 is turned on, the conduction path of the current is blocked by the patterned layer 61〇& 21 200913308, and along the fingers 6iia, 611b, 611e, 611d, 611e, 6Uf' 6Ug defined by the patterned layer 610a, 6Uh, 611丨, 6chuan, 6Uk, 611b6Um, 611n, 6U〇 or 6Up are evenly dispersed. The design is such that the fingers 611a have the lowest sheet resistance and contact resistance, while the fingers 611e have the highest sheet resistance and contact resistance, which can force a larger current to pass through the path of the fingers 611a without It is only like to pass the shortest path of the finger 611e, and according to the design criterion, the mathematical density of the finger 611a and the finger 61 le can be made the same, and each of the remaining fingers 611b, 611c 011d, 611f, 611g, 611h, 611i, 6Uj, 611k, 61U, 611m, 611n, 611〇 or 611P can also be set according to this criterion, so that each finger can achieve the purpose of uniformizing the current density. Referring to FIGS. 7A to 7C, FIG. 7A is a plan view showing a structure of a light-emitting diode element 7A according to a sixth preferred embodiment of the present invention. The 7B circle is a cross-sectional view of the structure taken along the line S7 according to Fig. 7A. Figure 7C is a cross-sectional view of the structure taken along line S72 in accordance with Figure 7A. The structure of the light-emitting diode element 5 第 of the 5A to 5C is similar to that of the light-emitting diode element 700. The difference is that the mode and position of the Schottky interface are different, and the light-emitting diode 500 is horizontal. The electrode arrangement of the structure, and the light-emitting body 700 is an electrode configuration of a vertical structure. The light-emitting diode element 700 includes a substrate 7〇1, an epitaxial structure 7〇2, a first electrode 703, a second electrode 704 transparent electrode 7〇5, and a Schottky rectifying interface 710. The substrate 701 may be aluminum oxide (Al 2 〇 3), tantalum carbide (Sic), gallium nitride (GaN), zinc oxide (zn 〇) or tantalum substrate. 22 200913308 The epitaxial structure 702 is located above the substrate 701. In a preferred embodiment of the present invention, the epitaxial structure 7〇2 includes a buffer layer 706, an 11-type semiconductor layer 707, an active layer 7〇8, and a 13-type semiconductor layer 709 which are sequentially epitaxially stacked on the substrate stack. . The transparent electrode 705 is then placed on the p-type semiconductor layer 7〇9. The first electrode 7〇3 is located on the transparent electrode 705 and is electrically connected to the P-type semiconductor layer 709 which is carried by the insect crystal structure by the transparent electrode 7〇5. The second electrode 7〇4 is located on the substrate 7〇1 on one side of the epitaxial structure 702. The second electrode 7〇4 passes through the substrate 701, the buffer layer 706 of the epitaxial structure 702, the n-type semiconductor layer 7〇7, the active layer 708, and the p-type semiconductor layer 7〇9, and then passes through the patterned transparent electrode and the first electrode. The electrode is electrically connected to the 703. The Schottky rectifier interface 710 is located between the transparent electrode 7〇5 and the p-type semiconductor layer 7〇9 of the epitaxial structure 702, and is used to define a plurality of contact surfaces between the transparent electrode 7〇5 and the epitaxial structure 702. Fingers, such as fingers 711a, 711b, 711c, 711d, 711e, 711f, 711g, 7Uh, 711i, 711j, 711k, 71U, 711m, 711n, 711o, and 711p, such fingers 711a, 711b, 711c 711d, 711e, 711f, 711g, 711h, 711i, 71 lj, 711k, 7111, 711m, 711n, 711o, and 711p extend from the edge 712 of the first electrode 703 to the edge 713 of the second electrode 704, respectively. And the width of the parent finger 711a, 711b, 711c, 711d, 711e' 711f, 711g, 711h, 711i, 711j, 711k, 711, 711m, 711n, 711, or 711p is proportional to the length of its extension. For example, in the present embodiment, the finger portion 711a has the longest extending distance L11 and thus has the largest width WU; the extending distance L12 of the finger portion 711e is the shortest, and the width W12 is also the narrowest at 200913308. In the present embodiment, the doping pattern 7i0a is formed in the same manner as in the fourth embodiment (refer to Figs. 5A to 5C). Therefore, when the first electrode 703 and the second electrode 7〇4 are turned on, the conduction path of the current is blocked by the push pattern 710a, and the fingers 711a, 711b, and 711c defined along the doped pattern 7i〇a, 711d, 711e, 711f, 7iig, 7llh, 711i, 711j, 711k, 71u, 711m, 711n, 7U (^7igip

Average dispersion. This design allows the finger 7Ua to have the lowest sheet resistance and contact resistance, while the finger 711e has the highest sheet resistance and contact resistance, thus forcing a larger current to pass through the finger 711 & Instead of just preferting the shortest path through the finger 711e, the design criteria can be simulated in a simple mathematical mode so that the current density of the finger 7113 and the finger 7Ue can be the same, and each of the remaining fingers 71 lb, 711 c, 711 d, 711 f, 711g, 711h, 711i, 711j, 711k, 711 711m, 7Un' 711〇 or 711p can also be designed according to this criterion, so that each finger can achieve the purpose of uniformizing current density. . Referring to FIG. 8, FIG. 8 is a cross-sectional view showing the structure of a light emitting diode element 800 according to a seventh preferred embodiment of the present invention. The light emitting diode element 800 includes a substrate 801, an epitaxial structure 8〇2, a first electrode 803, a second electrode 804, and a transparent conductive layer 8〇5. The material A can be alumina (Ai2〇3), tantalum carbide (Sic), gallium nitride ((^ν), zinc oxide (ZnO) or Shixia substrate. The epitaxial structure 802 is located on the substrate 8〇 In the preferred embodiment of the present invention, the epitaxial structure 8〇2 comprises sequential epitaxial stacking on the substrate 〇1 2 24 200913308 buffer layer 806, n-type semiconductor layer 807, active layer 808 And a p-type semiconductor layer 809.

The transparent conductive layer 805 is then located on the p-type semiconductor layer 809. The first electrode 803 is disposed on the transparent conductive layer 805, and is electrically connected to the p-type semiconductor layer 8〇9 of the epitaxial structure 802 by the transparent conductive layer 8〇5. The second electrode 8〇4 is located on the substrate 8〇1 with respect to one side of the telecrystal structure 802. The second electrode 804 passes through the substrate 801, the buffer layer 806 of the epitaxial structure 802, the n-type semiconductor layer 807, the active layer 8〇8, and the p-type semiconductor layer 8〇9, and is electrically connected to the first electrode via the transparent conductive layer 805. 803 sexual links. The transparent conductive layer 805 is composed of a plurality of materials having different refractive indices, and thus the transparent conductive layer 8〇5 has a refractive index gradient arranged in a power-down manner. In a preferred embodiment of the present invention, the plurality of materials constituting the transparent conductive layer 8〇 may include indium oxide (Ιη〇2〇3), tin oxide (Sn〇2), indium tin oxide (ITO), and oxidized words ( Zn0), cadmium tin oxide (Cd2Sn〇4), titanium nitride (ΤιΝ), doped aluminum zinc oxide (AZ〇), gallium-doped zinc oxide (Gz〇), doped gallium zinc oxide (GZOY) or the above Any combination of materials. The difference in refractive index of the light-emitting interface of the epitaxial semiconductor structure can be increased, and the function of reducing total light reflection can be greatly improved, so that the luminous efficiency and the light extraction rate of the light-emitting diode element 800 can be greatly improved. Referring to FIG. 9, FIG. 9 is a cross-sectional view showing the structure of a light-emitting diode element 9A according to a preferred embodiment of the present invention. The light-emitting diode element 800 of the first figure is similar to the structure of the light-emitting diode element 9'. The difference is that the arrangement of the electrodes is different. The light-emitting diode element _ includes · substrate 901, insect Crystal structure 902 25 200913308 First electrode 903, second electrode 904 and transparent conductive layer 905. The substrate 901 may be alumina (Al2〇3), tantalum carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO) or tantalum substrate. Epitaxial structure 902 is then over substrate 901. In a preferred embodiment of the present invention, the epitaxial structure 902 includes a buffer layer 906, an n-type semiconductor layer 907, an active layer 908, and a p-type semiconductor layer 909 which are sequentially epitaxially stacked on the substrate 901. Layer 905 is then located on p-type semiconductor layer 909. The first electrode 903 is disposed on the transparent conductive layer 905, and is electrically connected to the p-type semiconductor layer 909 of the epitaxial structure 902 by the transparent conductive layer 905. The second electrode 904 is disposed on the n-type semiconductor layer 907 and passes through the n-type semiconductor layer 907, the active layer 908, and the p-type semiconductor layer 909 of the epitaxial structure 902, and is electrically coupled to the first electrode via the transparent conductive layer 905. . The transparent conductive layer 905 is composed of a plurality of materials having different refractive indices, and thus the transparent conductive layer 905 has a refractive index gradient arranged in a power-down manner. In the embodiment of the present invention, the plurality of materials constituting the transparent conductive layer 905 may include indium oxide (Ιη203), tin oxide (Sn02), indium tin oxide (ITO), zinc oxide (ZnO), tin tin oxide ( Cd2Sn04), titanium nitride (TiN), doped indium oxide (IZO), doped aluminum oxide (AZO), doped gallium oxide (GZO), doped gallium zinc oxide (GZOY) or the above materials Any combination of components. The difference in refractive index of the light-emitting interface of the epitaxial semiconductor structure can be increased, and the function of reducing total reflection of light can be increased, so that the luminous efficiency and the light extraction rate of the light-emitting diode element 900 can be greatly improved. According to the above embodiment, the technical feature of the present invention adopts a patterned transparent electrode having a plurality of core portions of 2009-13308, or a pattern-transparent electrode to pattern-transparent electrodes to have a plurality of Finger pattern. And according to the length of the current conduction path of each finger, so that it has different widths 'adjust the sheet resistance of each finger and the contact electric m, so that the current flowing through each heart portion corresponds to The product of the resistance values is substantially the same. By patterning the transparent electrode to increase the resistance of the shortest path, forcing the current to flow to the edge of the light-emitting area, the current can be evenly distributed into the light-emitting structure to increase the effective area of the light-emitting area and improve the luminous efficiency'. ° Reduce the equivalent current density and improve the luminous efficiency of the light-emitting diode. Between the epitaxial semiconductor structure of the light-emitting diode element and the positive gold f' provides a total reflection of the light-emitting interface of the transparent conductive-destiny low-feature semiconductor structure with a refractive index gradient of the power-down arrangement to improve the light emission - Light extraction efficiency of the polar body element. However, the present invention has been disclosed above in the preferred embodiment, but it is not intended to be limiting.

Anyone who has the usual knowledge in the relevant technical field, without departing from the spirit and scope of this =, can be used for a variety of changes and protection of the decoration _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The above and other objects, features, advantages and embodiments can be more readily understood. The detailed description of the drawings is as follows: Figure 1A is a cross-sectional view taken in accordance with a conventional method. The knot of the first polar body component Fig. 1B shows the general thermal image distribution of the cargo. 27 200913308 Figure 2 is a plan view showing the structure of a light-emitting diode according to a first preferred embodiment of the present invention. The second diagram is a cross-sectional view of the structure taken along the tangent line mi according to the second diagram. Fig. 2C is a cross-sectional view of the structure according to the 2C _ nationalized green S22. 3A is a top plan view of a light emitting diode according to a second preferred embodiment of the present invention. Figure 3B is a structural section taken along the line according to Figure 3A.

3C is a top plan view of a light-emitting diode element according to a third preferred embodiment of the present invention, according to a third embodiment of the present invention.

Figure 4B is a cross-sectional view of the structure taken along the line ^ according to 帛4八图. 4C is a structural cross-section of the light-emitting diode element according to a fourth preferred embodiment of the present invention. FIG. 5A is a top plan view of a light-emitting diode element according to a fourth preferred embodiment of the present invention. The =5B diagram is a cross-sectional view of the structure shown in § 5 of the tangent line according to 帛5-8. Fig. 6A is a plan view showing a structure of a light emitting diode element according to a fifth preferred embodiment of the present invention. 28 200913308 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图Figure 7 is a structural section according to a tangential line S71 according to Fig. 7C. Section 7C® is a structural section according to a tangential line s72 according to Fig. 7A. Fig. 8 is a seventh preferred embodiment of the present invention. A cross-sectional view showing the structure of a light-emitting diode element. Fig. 9 is a cross-sectional view showing the structure of a light-emitting diode element according to the eighth preferred embodiment of the present invention. Main element symbol description 100 · Light-emitting diode element 102 : n-type semiconductor layer 104 : p-type semiconductor layer 106 : back surface electrode 201 : substrate 203 : first electrode 205 : patterned transparent electrode 207 : n-type semiconductor layer 101 : substrate 103 : active layer 105 : forward electrode 200 : light emitting diode element 202 . worm crystal structure 204 : second electrode 206 : buffer layer 208 : active layer 29 200913308 209 : p type semiconductor layer 210b : trench 210c : Trench 210d: trench 210e: trench 210f: trench 210g: trench 210h: trench 210i: trench 210j: trench 211a: finger 211b: finger 211c: finger 211d: finger 211e: finger 211f: finger 211g: finger 211h: finger 211i: finger 212: edge 213 of the first electrode: edge 300 of the second electrode: light emitting diode element 301: substrate 302: epitaxial structure 303: first electrode 304: second electrode 305: patterned transparent electrode 306: buffer layer 307: n-type semiconductor layer 308: active layer 309: p-type semiconductor layer 310a: trench 310b: trench 310c: trench 310d: trench 310e: trench 310f: trench 310g: trench 31 0h: trench 310i: trench 310j: trench 310k: trench 3101: trench 3 10m: trench 310n: trench 310〇: trench 310ρ: trench 311 a: finger 30 200913308 311b: finger Portion 311c: finger portion 31 Id: finger portion 311e: finger portion 311f: finger portion 311g: finger portion 311h: finger portion 31Π: finger portion 311 j: finger portion 311k: finger portion 3111: Finger 311 m : finger 311 η : finger 311 〇 : finger 311 Ρ : finger 312 : edge 313 of the first electrode : edge 400 of the second electrode : light emitting diode element 401 : substrate 402: epitaxial structure 403: first electrode 404: second electrode 405: transparent electrode 406: buffer layer 407: n-type semiconductor layer 408: active layer 409: p-type semiconductor layer 410: Schottky rectification interface 410a: patterning Layer 411a: finger portion 411b: finger portion 411c: finger portion 411d: finger portion 411e: finger portion 411f: finger portion 411g: finger portion 411h: finger portion 411i: finger portion 412: Edge 413 of an electrode: edge 500 of the second electrode: light emitting diode element 501: substrate 502: epitaxial structure 503: first electrode 504: second Pole 505 : patterned transparent electrode 506 : buffer layer 31 200913308 507 : n-type semiconductor layer 508 : active layer 509 : p-type semiconductor layer 510 : Schottky rectifying interface 510a : doping pattern 511a : finger 511b : finger shape Portion 511c: finger portion 511d: finger portion 5lie: finger portion 511f: finger portion 511g: finger portion 5111ι: finger portion 511i: finger portion 512: edge 513 of the first electrode: edge of the second electrode 600: Light-emitting diode element 601: Substrate 602: Staggered crystal structure 603: First electrode 604: Second electrode 605: Transparent electrode 6 0 6 : Buffer layer 607: n-type semiconductor layer 608: Active layer 609: ρ-type Semiconductor layer 610: Schottky rectifying interface 610a: patterned layer 611a: finger portion 611b: finger portion 611c: finger portion 611d: finger portion 611e: finger portion 611f: finger portion 611g: finger portion 611h : finger 611i : finger 611j : finger 611k : finger 6111 : finger 611 m : finger 611 η : finger 611 〇 : finger 611 ρ : finger 612 : first Edge 613 of the electrode: edge 700 of the second electrode: light emitting diode element 701: substrate 32 200913308

702 epitaxial structure 704 first electrode 706 buffer layer 708 active layer 710 Schottky rectifying interface 711a: finger 711c: finger 711e: finger 711g: finger 711i • finger 711k: finger 711m: finger 711o: finger 712: edge 800 of the first electrode: light emitting diode element 802 • • remote crystal structure 804 • first electrode 806: buffer layer 808: active layer 900: light emitting diode element 902. Insect crystal structure 904: second electrode 906: buffer layer 908: active layer 703: first electrode 705: patterned transparent electrode 707: 11-type semiconductor layer 709: P-type semiconductor layer 710a. Doping pattern 711b: finger shape Portion 711d. Finger portion 711f: Finger portion 711h: Finger portion 711j: Finger portion 7111: Finger portion 711n: Finger portion 711p: Finger portion 713: Edge of the first electrode. Edge 801: Substrate 803 : First electrode 805 : transparent conductive layer 807 : n-type semiconductor layer 809 : germanium-type semiconductor layer 901 : substrate 903 : first electrode 905 : transparent conductive layer 907 : n - type semiconductor layer 909 : germanium type semiconductor layer 33 200913308

11 : Hole flow S21 : Tangent S22 : Tangent S31 : Tangent S32 : Tangent S41 : Tangent S42 : Tangent S51 : Tangent S52 : Tangent S61 : Tangent S62 : Tangent S71 : Tangent S72 : Tangent L1 : Extension distance L2 : Extension distance L3 : Extension distance L4 : Extension distance L5 : Extension distance L6 : Extension distance L7 : Extension distance L8 : Extension distance L9 : Extension distance L10 : Extension distance L11 : Extension distance L12 : : Extension distance W1 : Width W2 : Width W3 : Width W4 : Width W5 : Width W6 : Width W7 : Width W8 : Width W9 : Width W10 : Width W11 : Width W12 : Width 34

Claims (1)

200913308 X. Application for Patent Park: 1. The light-emitting diode (Light Emitting Di〇de; coffee) component comprises: a substrate; an epitaxial structure 'on the substrate; the first electrode, and the insect The crystal structure is electrically connected; the first electrode is electrically connected to the first electrode through the crystal structure The solid tea-transparent transparent electrode ... electrically electrically conducts the first electrode and the epitaxial junction - and has eight to five - grooves to define a plurality of fingers, wherein: one of the fingers The edge of the first electrode extends toward the edge of the second electrode, and each of the fingers has a width and an extension length which is proportional to the extension length. The light-emitting diode element of claim 1, wherein the fingers are radially extended from the edge of the first electrode to the edge of the second electrode and surround The second electrode. The light-emitting diode component of claim 1, wherein: - 卩 has a resistance value, and when the first electrode is electrically connected to the second electrode, the household is > 1 , and the IL mother The current of a finger is substantially the same as the product of the corresponding resistor 傕. 4. The light-emitting diode component of claim 1, wherein the 35 200913308 side fingers comprise a first finger having a first width (wl) and a first: extension length (L1) a second finger having a second width (W2) and a first extension length (L2), wherein a first current (Π) flowing through the first finger and the machine passing the second finger The ratio of a second current (12) of the part can be expressed by the mathematical formula: 11/12= (W1/W2) (Ll/2xRsh+pco/Ll)/ (L2/2xRsh+ pC0/L2) where Rsh is transparent A piece of resistance of the electrode, Pc. A contact resistivity between the transparent electrode and the domed structure. 5. The light-emitting diode element according to claim 1, wherein the patterned transparent conductive layer is composed of a plurality of materials having different refractive indices. 6. The light-emitting diode element according to claim 5, wherein the materials constituting the patterned transparent electrode are respectively selected from indium oxide (Ιη203), tin oxide (Sn〇2), and oxidation. Indium tin (IT〇), zinc oxide (Zn〇), cadmium tin oxide (Cd2Sn04), titanium nitride (TiN), doped indium oxide (ιζ〇), doped oxidized (AZO), doped gallium A group of oxidized words (GZ〇), fused with gallium oxide (GZOY), and any combination of the above. The light-emitting diode element according to claim 5, wherein the patterned transparent electrode has a refractive index gradient arranged in a power-down manner. 8. A light-emitting diode component comprising: 36 200913308 a substrate; an epitaxial structure on the substrate; a first electrode electrically connected to the epitaxial structure; a first electrode, through the insect The crystal structure is electrically connected to the first electrode; a transparent electrode electrically connecting the first electrode and the crystal structure; and a Schottky rectifying interface between the transparent electrode and the epitaxial structure, a plurality of fingers are defined between the transparent electrode and the contact surface of the crystal structure, such that the fingers extend from the edge of the first electrical electrode to the edge of the second electrode, and each of the The fingers have a width and an extension length 'the width is proportional to the extension length. 9. The light-emitting diode element of claim 8, wherein the Schottky rectifier interface is formed by contacting a patterned layer having a high light transmittance with the stray structure. The luminescent diode component of claim 9, wherein the patterned layer is formed by depositing a metal oxide on the epitaxial structure by an evaporation process. The light-emitting diode element according to claim 10, wherein the material of the patterned layer is selected from the group consisting of metal oxides, metal nitrides, metal oxynitrides, semiconductor oxides, semiconductor nitrides. , a semi-compound, and a combination of the above-mentioned combinations. The illuminating diode element according to the invention of claim 2, wherein the material of the patterned layer is selected from the group consisting of: nickel emulsion (Νιχ〇γ), indium oxide (Ιη203) ), emulsified tin (Sn〇), oxy fresh (Zn0), cerium oxide (SiO 2 ), cerium nitride (SigN4), cerium oxynitride (Si〇N : a ^ X y) - oxidized gallium (Ga2 Ga 3) and a group consisting of the above combinations. Because of the application. In the light-emitting diode element according to Item 9 of the patent scope, the Schottky rectifying interface in a is a doping pattern of the day and the day-to-day structure of the cat and the contact layer of the 亥海猫日日层A pattern defined. The light-emitting diode element according to claim 13 is characterized in that: the pattern is doped by a doping process on a part of the surface of the insect crystal structure. The light-emitting diode element according to claim 14 is characterized in that: the cedar system is selected from the group consisting of nickel oxide, indium oxide, tin oxide, oxidized, and cerium nitride. , the bismuth oxynitride, the gallium arsenide, and the combination of the above-mentioned combinations. The illuminating diode component of the eighth aspect of the invention, wherein: the four fingers are from the edge of the first electrode Radially extending toward the edge of the first electrode. The light-emitting diode component of claim 8 wherein each of the fingers of 38 200913308 has a resistance value when the first electrode and the first electrode When the second electrode is turned on, a current flowing through each of the fingers is substantially the same as a product of the corresponding resistance value. 18. The light-emitting diode component according to claim 8, wherein The transparent conductive layer has a refractive system arranged in a power-down manner The light-emitting diode element according to claim 18, wherein the transparent electrode is composed of a plurality of materials having different refractive indices. 2〇. as described in claim 19 The light-emitting diode element, wherein the materials constituting the transparent electrode are respectively selected from the group consisting of indium antimonide, tin oxide oxidized fine tin, oxidized words, tin oxide recording, titanium nitride, doped steel oxidized words, and doped A group of aluminum oxides, gallium-doped zinc oxide, cerium-doped gallium zinc oxide, and any combination thereof. 21. A light emitting diode device comprising: a substrate; an epitaxial structure over the substrate; a first electrode electrically coupled to the epitaxial structure; - a second electrode 'transmitting the insect a crystal structure and the first electrode electrical property and a transparent conductive layer, wherein the transparent conductive layer electrically connects the first electrode and the epitaxial structure, and a refractive index gradient is arranged in a power reduction manner. The light-emitting diode element according to claim 21, wherein each of the transparent conductive layers is composed of a plurality of materials having different refractive indices. 23. The light-emitting diode component of claim 21, wherein the materials are selected from the group consisting of indium oxide, tin oxide, indium tin oxide, zinc oxide, cadmium tin oxide, titanium nitride, and the like. A group of hetero-indium oxides, doped aluminum zinc oxide, gallium-doped zinc oxide, doped gallium-doped oxides, and any combination of the above. 40