TW200918686A - Etching solution and method for forming conductor patterns - Google Patents
Etching solution and method for forming conductor patterns Download PDFInfo
- Publication number
- TW200918686A TW200918686A TW097133701A TW97133701A TW200918686A TW 200918686 A TW200918686 A TW 200918686A TW 097133701 A TW097133701 A TW 097133701A TW 97133701 A TW97133701 A TW 97133701A TW 200918686 A TW200918686 A TW 200918686A
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- Prior art keywords
- copper
- concentration
- acid
- compound
- etching solution
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 64
- 239000004020 conductor Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052802 copper Inorganic materials 0.000 claims abstract description 63
- 239000010949 copper Substances 0.000 claims abstract description 63
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 38
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 22
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000001491 aromatic compounds Chemical class 0.000 claims abstract description 12
- 150000004982 aromatic amines Chemical class 0.000 claims abstract description 7
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 150000002989 phenols Chemical class 0.000 claims abstract description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 58
- 239000007788 liquid Substances 0.000 claims description 45
- 150000003839 salts Chemical class 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000003112 inhibitor Substances 0.000 claims description 4
- 206010036790 Productive cough Diseases 0.000 claims description 3
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- 208000024794 sputum Diseases 0.000 claims description 3
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 claims 2
- HCKPQGBXPQNMKU-UHFFFAOYSA-N 2,3-bis[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=CC(O)=C1CN(C)C HCKPQGBXPQNMKU-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims 1
- 239000002738 chelating agent Substances 0.000 claims 1
- 239000012141 concentrate Substances 0.000 claims 1
- TYTUEXPNTQGSDO-UHFFFAOYSA-N hydrazine 2-hydroxybenzoic acid Chemical compound NN.OC1=C(C(=O)O)C=CC=C1 TYTUEXPNTQGSDO-UHFFFAOYSA-N 0.000 claims 1
- VMGAPWLDMVPYIA-HIDZBRGKSA-N n'-amino-n-iminomethanimidamide Chemical compound N\N=C\N=N VMGAPWLDMVPYIA-HIDZBRGKSA-N 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- BOLDJAUMGUJJKM-LSDHHAIUSA-N renifolin D Natural products CC(=C)[C@@H]1Cc2c(O)c(O)ccc2[C@H]1CC(=O)c3ccc(O)cc3O BOLDJAUMGUJJKM-LSDHHAIUSA-N 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 125000003831 tetrazolyl group Chemical group 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 32
- 239000000243 solution Substances 0.000 description 22
- -1 2-aminobenzoxime Substances 0.000 description 20
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 11
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- 230000008859 change Effects 0.000 description 8
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000002309 gasification Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
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- 239000007789 gas Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
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- 239000000126 substance Substances 0.000 description 5
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 4
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- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
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- 229920006317 cationic polymer Polymers 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- 229960003237 betaine Drugs 0.000 description 3
- MAYPHUUCLRDEAZ-UHFFFAOYSA-N chlorine peroxide Inorganic materials ClOOCl MAYPHUUCLRDEAZ-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- OSVXSBDYLRYLIG-UHFFFAOYSA-N dioxidochlorine(.) Chemical compound O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
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- 206010039424 Salivary hypersecretion Diseases 0.000 description 2
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- 125000003118 aryl group Chemical group 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010021703 Indifference Diseases 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- QLFZSBFGHHNARU-UHFFFAOYSA-N N1N=NN=C1.C1=CC=CC=2C3=CC=CC=C3CC12 Chemical compound N1N=NN=C1.C1=CC=CC=2C3=CC=CC=C3CC12 QLFZSBFGHHNARU-UHFFFAOYSA-N 0.000 description 1
- VTGNXADCFUDPLG-UHFFFAOYSA-N O(O)O.[Cu] Chemical compound O(O)O.[Cu] VTGNXADCFUDPLG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- BHHGXPLMPWCGHP-UHFFFAOYSA-N Phenethylamine Chemical compound NCCC1=CC=CC=C1 BHHGXPLMPWCGHP-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
- BDKZHNJTLHOSDW-UHFFFAOYSA-N [Na].CC(O)=O Chemical compound [Na].CC(O)=O BDKZHNJTLHOSDW-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000004103 aminoalkyl group Chemical group 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 235000009569 green tea Nutrition 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-O hydron;1,3-oxazole Chemical compound C1=COC=[NH+]1 ZCQWOFVYLHDMMC-UHFFFAOYSA-O 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229930003658 monoterpene Natural products 0.000 description 1
- 150000002773 monoterpene derivatives Chemical class 0.000 description 1
- 235000002577 monoterpenes Nutrition 0.000 description 1
- OXKUGIFNIUUKAW-UHFFFAOYSA-N n,n-dimethylformamide;hydrazine Chemical compound NN.CN(C)C=O OXKUGIFNIUUKAW-UHFFFAOYSA-N 0.000 description 1
- 210000002445 nipple Anatomy 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005502 peroxidation Methods 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 235000013616 tea Nutrition 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Abstract
Description
200918686 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種銅的蝕刻液及使用其之導體圖案形 成方法。 【先前技術】 在印刷電路板的製造中,用光姓刻法來形成由銅製成 的導體圖案(配線圖案、端子圖案等)時,使用氯化鐵系㈣BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching solution for copper and a conductor pattern forming method using the same. [Prior Art] In the manufacture of a printed circuit board, when a conductor pattern (wiring pattern, terminal pattern, etc.) made of copper is formed by photo-inscription, a ferric chloride system is used (four)
液、氯化銅系蝕刻液、鹼性蝕刻液等作爲蝕刻液。但是, 在這些敍刻⑨中,#在被稱爲底切(undercut)之阻=劑 (etchmg resist)下的銅從側面開始溶解的問題。亦即,產生 如下現象:期望因被阻蝕劑覆蓋而本來不會被蝕刻除去的 部分(即配線部分)會被侧蝕刻除去,而沿著從該配線的底部 :頂部,寬幅變細的現象(底切特別是配線圖案爲微細 日寸,廷樣的底切必須盡可能少。 以往’有人研究能抑制上述底切的蝕刻液。例如在下 述專利文獻1中,提出含有氯化銅、鹽酸、2_胺基苯并嘍唾 類化合物、聚乙二醇及特定的亞院基多 _ polyamine)化合物的水溶液的技術方案。 另外’在下述專利文獻2 蝕刻液,其藉由配合特定的唑 配線的頂部變細。 中,公開了一種圖案形成用 類,而底切少,且能防止銅 專利文獻1 : 專利文獻2 : 【發明内容】 曰本專利特開平6-57453號公報 曰本專利特開2005-330572號公報 200918686 、然而,就上述專利文獻1中所記載之以往的蝕刻液來 說,有抑制底切不充分的情況,而要求能進一步抑 的蝕刻液。 氐刀 另卜上述專利文獻2所記載之钱刻液存在下述問題。 如果使㈣離子作爲姓刻液的氧化齊卜則在钱刻過程 中,銅離子和被钱刻的金屬銅反應,生成亞銅離子, :::的濃度上升。如果亞銅離子的濃度超過—,則蝕 : 降,因而,通常在飯刻液中添加過氧化氫等氧化 知’,以進行將亞銅離子再生爲銅離子的反應。 但是’如果添加過氧化急 目丨 虱則蝕刻液中含有的唑類也 刀解,配線圖案的頂部變細變得劇烈。 以上二防止這種情況,必須一邊管理使得唾濃度在-定 邊進行蝕刻,管理相當繁雜。 案二=目Γ於提供,刻液及使用其之導體圖 過氧化氫’係在這樣㈣能下降時添加 案頂部形狀姓刻成理,形狀能夠在底切少的狀態下將圖 容易地將唾濃度維持:—=上且即使連續使用,也可以 部形狀—邊進行钱刻。 ,並能—邊維持圖案的頂 :發明之㈣液係含有銅離子源 液,其特徵在於,其係含及欠之銅㈣ 有氮原子作爲存在於環内的㈣:香:合物,該唾僅具 齡類和芳香族胺類中之至的雜原子,該方香族化合物選自 心王少—種。 200918686 上述本發明中的“銅”可以是由純銅製成的,也可以 是由銅合金製成的。另外,在本說明書中,“銅,,是指純 銅或銅合金。 本發明之導體圖案之形成方法,其特徵在於,使用上 述本發明之蝕刻液,將電氣絕緣材料上銅層之未被阻蝕劑 覆蓋的部分進行#刻,形成導體圖案。 本發明之蝕刻液及使用其之導體圖案之形成方法,能A liquid, a copper chloride-based etching solution, an alkaline etching solution, or the like is used as an etching liquid. However, in these characterizations 9, # copper is dissolved from the side under the etchmg resist called undercut. That is, a phenomenon occurs in which a portion (i.e., a wiring portion) which is not originally removed by etching by a resist is desired to be removed by side etching, and is tapered from the bottom of the wiring: the top. In the case of the undercut, in particular, the wiring pattern is fine, and the undercut of the sample must be as small as possible. In the past, an etching liquid capable of suppressing the undercut was studied. For example, in Patent Document 1 below, it is proposed to contain copper chloride. A technical solution of an aqueous solution of a compound of hydrochloric acid, 2-aminobenzoxime, polyethylene glycol, and a specific sub-hospital polyamine compound. Further, in the following Patent Document 2, an etching liquid is obtained by blending a top portion of a specific azole wiring. In the case of the pattern forming type, the undercut is less, and the copper can be prevented from being protected. Patent Document 1: Patent Document 2: [Patent Document 2] Patent Publication No. Hei 6-57453, Japanese Patent Laid-Open No. 2005-330572 Japanese Patent Publication No. 200918686. However, in the conventional etching liquid described in Patent Document 1, there is a case where the undercut is not sufficiently suppressed, and an etching liquid which can be further suppressed is required. Sickle The money engraving liquid described in the above Patent Document 2 has the following problems. If the (four) ions are used as the oxidation of the surname engraving, in the process of engraving, the copper ions react with the metal copper which is engraved to form cuprous ions, and the concentration of ::: rises. If the concentration of the cuprous ion exceeds -, the etch is lowered. Therefore, an oxidation such as hydrogen peroxide is usually added to the rice cultivating liquid to carry out a reaction for regenerating cuprous ions into copper ions. However, if urethane is added, the azole contained in the etching solution is also pulverized, and the top of the wiring pattern becomes fine. The above two prevent this situation, and it is necessary to manage so that the salivation concentration is etched at the fixed side, and the management is rather complicated. Case 2 = Seeing to provide, engraving and using the conductor diagram hydrogen peroxide' is such that when the (four) can be lowered, the top shape of the case is added, and the shape can be easily cut in the state of less undercut. The salivary concentration is maintained: -= and even if it is used continuously, it can be shaped in a part-by-side. And capable of maintaining the top of the pattern: the (4) liquid system of the invention contains a copper ion source liquid, characterized in that it contains and owes copper (4) having a nitrogen atom as (4): a fragrant compound present in the ring. The saliva is only a hetero atom of the genus and the aromatic amine, and the scent compound is selected from the group of the genus. 200918686 The "copper" in the above invention may be made of pure copper or may be made of a copper alloy. Further, in the present specification, "copper" means pure copper or a copper alloy. The method for forming a conductor pattern of the present invention is characterized in that the copper layer of the electrically insulating material is not blocked by using the etching liquid of the present invention described above. The portion covered by the etchant is patterned to form a conductor pattern. The etching solution of the present invention and the method for forming the conductor pattern using the same can
夠於側蝕刻少的狀態下,將圖案頂部形狀蝕刻成理想的形 狀,且即使連續或反覆使用蝕刻液,也可以容易地將唑濃 度維持在-定以上,並可一邊維持圖案的頂部形狀一邊進 行姓刻。 【實施方式】 本發明以如下類型之銅蝕刻液作爲對象,亦即係一種 銅蝕刻液,其係在蝕刻中產生亞銅離子而蝕刻性能下降 時’-邊添加過氧化氫等氧化劑將亞銅離子再生爲銅離 子’-邊反覆錢續使用之類型者。對於構成純刻液的 各成分等,詳細說明如下。 (銅離子源) 銅離子源是作爲將金屬銅氧化的氧化劑而添加之成 分。銅離子源的種類,可例舉出例如氯化銅、疏酸銅、、、臭 化銅、有機酸的銅鹽、氣氧化銅等。其中,由於溶解性高: 银刻速度快而特佳為氯化銅。 另外,該銅離子源的濃度範圍,較佳為銅離子濃 14〜155g/L的範圍’特佳為33〜mg/L的範圍。只要是:該 200918686 範圍内’則可以防止蝕刻速度下降’且由於銅離子的溶解 性良好而可以穩定地維持蝕刻速度。在使用較佳之銅離子 源即氯化銅時,氯化銅的濃度較佳為30〜33〇g/L、更佳為 70〜260g/L的範圍。 (酸) 酸是爲了將被銅離子氧化的金屬銅溶解而添加之成 分。所使用之酸的種類,可以舉出選自無機酸及有機酸中 € 之至少一種。 上述無機酸可以舉出硫酸、鹽酸、確酸、碟酸等。上 述有機酸可以舉出曱酸、乙酸、草酸、馬來酸、苯甲酸、 乙醇酸等。其中就特佳之酸而言,從蝕刻速度的穩定性及 銅的溶解穩定性(將亞銅離子和銅離子在蝕刻液中保持的能 力高的情形)的觀點來看,較佳為鹽酸。 酸的濃度較佳為7〜180g/L、更佳為18〜11〇g/L、再更佳 為18〜80g/L。只要酸的濃度爲7g/L以上,就可以得到穩定 t, 的蝕刻速度,且可以防止銅的溶解穩定性的下降。另一方 面,、要酸的濃度在18〇g/L以下,就可以防止蝕刻液侵蝕 到阻蝕劑與銅之間,且可以防止銅表面的再氧化。 (僅具有氮原子作爲存在於環内的雜原子之唑) 爲了抑制底切,係於本發明的蝕刻液中添加僅具有氮 原子作爲存在於環内的雜原子之唑(以下,也簡稱 “唑”)。 舄 唑抑制底切的機制還不明確,吾人認為原因如下:藉 由仗導體圖案的頂部開始與側面附近液體中的亞銅離子姅 200918686 皮膜,從而 合,而從導體圖案的頂部開始在側面形成保護 抑制底切。 μ ° 衣iW匕合物,也可以„ 縮合而成之化合物。特佳為味唾李 ^ 尔1匕合物、三唑车人 及四唾系化合物,也可以組合使用這些唾之2種以上。口 上述味吐類化合物的例子可以例舉出嗦唾、甲基 唾、2-Η--烷基-4-曱基咪唑、9婪盆, ’、 * ^ 2 基㈣等咪"坐類,苯并啼In a state where the side etching is small, the top shape of the pattern is etched into a desired shape, and even if the etching liquid is continuously or repeatedly used, the azole concentration can be easily maintained at -1 or more while maintaining the top shape of the pattern. Carry the last name. [Embodiment] The present invention is directed to a copper etching solution of the type which is a copper etching liquid which generates cuprous ions during etching and has a reduced etching property. - An oxidizing agent such as hydrogen peroxide is added to the cuprous copper. Ion regeneration is a type of copper ion '-side repeated use. The components and the like constituting the pure engraving liquid will be described in detail below. (Copper ion source) The copper ion source is a component added as an oxidizing agent for oxidizing metallic copper. The type of the copper ion source may, for example, be copper chloride, copper sulphate, copper oxide, a copper salt of an organic acid, or copper oxyhydroxide. Among them, due to high solubility: silver engraving speed is fast and particularly preferred is copper chloride. Further, the concentration range of the copper ion source is preferably in the range of copper ion concentration of 14 to 155 g/L, particularly preferably in the range of 33 to mg/L. As long as it is: in the range of 200918686, the etching rate can be prevented from decreasing, and since the solubility of copper ions is good, the etching rate can be stably maintained. When a preferred copper ion source, i.e., copper chloride, is used, the concentration of copper chloride is preferably in the range of 30 to 33 Å/L, more preferably 70 to 260 g/L. The (acid) acid is a component added to dissolve copper metal oxidized by copper ions. The type of the acid to be used may be at least one selected from the group consisting of inorganic acids and organic acids. Examples of the inorganic acid include sulfuric acid, hydrochloric acid, acid, and acid. The organic acid may, for example, be citric acid, acetic acid, oxalic acid, maleic acid, benzoic acid or glycolic acid. Among them, hydrochloric acid is preferred from the viewpoint of stability of etching rate and dissolution stability of copper (in the case where cuprous ions and copper ions are held in an etching solution). The concentration of the acid is preferably from 7 to 180 g/L, more preferably from 18 to 11 g/L, still more preferably from 18 to 80 g/L. As long as the acid concentration is 7 g/L or more, an etching rate of stable t, and a decrease in the solubility stability of copper can be prevented. On the other hand, if the concentration of the acid is below 18 〇g/L, the etching solution can be prevented from eroding between the corrosion inhibitor and the copper, and the reoxidation of the copper surface can be prevented. (Azole having only a nitrogen atom as a hetero atom present in the ring) To suppress the undercut, an azole having only a nitrogen atom as a hetero atom existing in the ring is added to the etching solution of the present invention (hereinafter, also referred to as " Oxazole"). The mechanism by which carbazole inhibits undercutting is still unclear. We believe that the reason is as follows: by the top of the conductor pattern and the cuprous ion 姅200918686 film in the liquid near the side, and thus, from the top of the conductor pattern, the side is formed on the side. Protection inhibits undercutting. μ ° YiW composition, can also be condensed into a compound. It is especially good for saliva Li ^ 1 compound, triazole car and tetra-salt compound, you can also use more than 2 kinds of these saliva Examples of the above-mentioned taste-like compound can be exemplified by sputum, methyl salic, 2-indolyl-alkyl-4-mercaptoimidazole, 9-inch pot, ', *^ 2 base (four), etc. Benzopyrene
唾、2_甲基苯并咪唑、2·十一烷其 Τ 沉基丰并咪唑、2-苯基苯并咪 唑、2-酼基笨并咪唑等的笨并咪唑類等。 上述三唾類化合物的例子可以例舉出三唾、 1,2,4-三吐、5_苯基丄以·三唾、5_胺基],2,4-三嗤、苯并三 唑、1-甲基-苯并三唑、甲苯基三唑等。 上述四唑類化合物的例子可以例舉出ΐΗ•四唑、5_胺基 Η四坐5甲基-1Η-四唑、5·苯基_1Η_四唑、5_疏基_出_ 四唾、1-苯基-5-魏基_1Η_四唑、κ環己基·5υ_ΐΗ_四唾、 ,5雙-1Η-四唑、及該等之銨鹽或Na鹽、Ζη鹽、Q鹽、κ 鹽等金屬鹽等。 在上述例示的唑中,特佳為四唑類化合物。其係因爲 不僅抑制底切的性能高,而且可以鮮明地形成圖案。 進而在四°坐類化合物中,較佳為1H-四咬、5 -苯基-1Η» :唑、5-胺基-1H_四唑、5,5,_雙_115_四唑、及該等之銨鹽或 孟屬鹽等,特佳為1H_四唑、5_胺基_1H-四唑、及該等之銨 _L、 is金屬鹽。吾人推定這些四唑類化合物可以從導體圖案 的頂部開始在側面薄且均勻地形成保護皮膜。 200918686 又,5-胺基_1H-四唑、及其銨鹽或金屬鹽, 過氧化氫分解,在將亞銅離子再生爲銅離子、二被 過氧化氯存在的情況下,濃度隨時間之變::的 向。因此,藉由添加後述之芳香族化合 、傾 度的效果,與不添加的情況相比,效果顯濃 發明。 H有囚而適於本 唾的濃度較佳為(M〜50g/L,更佳為〇 ι〜 r 佳為〇.2〜10g/L。只要嗤的濃度在。 ,:更 地抑制底切。另一方面,唾的濃度爲5軌以下確切 止蝕刻速度的下降,且可以確 ’ Ύ以防 d 地蝕刻欲破蝕刻的部八 因而可以防止短路(絕緣不良)的發生。 ^, 物)@自㈣種之芳香族化合 爲了防止過氧化氫等氧化劑所 明之-刻液中,添加選自紛類及芳香族解,在本發 之芳香族化合物(以下,也簡稱爲“:^類中之至少—種 “芳香族化合物,,中不包括心 %化合物)。上述 上述芳香族化合物抑制氧㈣ 還不明確,但吾人認為原因如下 的㈣刀解的機制 有捕捉在添加過氧化氯等氧化劑時所生:香族化合物’具 由基之具有強氧化作用之物質的作用。被稱爲趣基自 由基分解,但通過預先添加好上 ㈣會被該窥基自 基自由基被芳香族化合物捕捉,因而香矢化合物,而使趣 也可以抑制唑被羥基自由基分解。 ”吏添加氧化劍, 10 200918686 上述芳香族化合物中’特別是紛類抑制嗓 優異,因而較佳。以下,具體例示芳香族化合=解之效果 酚類的具體例可例示有: ° 2.4.6- 三(二曱胺基曱基)苯酚(一元)、 苯酌·績酸或其鹽(一元)、 甲酚磺酸或其鹽(一元)、 水揚酸或其鹽(一元)、 木質磺酸或其鹽(一元)、 苯酚(一元)、 兒茶酚(二元、羥基非對稱)、 二甲苯盼(一元)、 沒食子酸(三元)、 苯基苯酌(一元)、 均苯三酚(三元)、 鄰苯三酌·(三元)、 對苯二酚(二元、羥基對稱)、 2.6- 二-第三丁基-對曱酚(一元)、 2,6 - — ·第二丁基-4 -乙基笨驗(一元)、 3 -第二丁基_4 -經基茴香醚(一元)等。在上述中,元數對 應於羥基的數目。 在該等酚類中,與二元以上的物質相比一元的物質特 別有效果。另外’在二元的情況(具有2個羥基之酚的情況) 下相對於^香環的中心非對稱地具有經基之盼,有比對 稱性地具有羥基之酚效果更高的傾向。進而,在水中溶解 200918686 性高之酚的效果較高。 在上述的各酚類中,由於抑制氧化劑所致之唑分解的 效果高’而特佳為苯紛續酸或其鹽、甲酚磺酸或其鹽、水 楊酸或其鹽、木質磺酸或其鹽、2,4,6_三(二甲胺基曱基)苯 适分等。 芳香族胺類的具體例可以例示出 萘二胺、 苯胺、 蔡基胺、 甲基笨胺、 二甲基苯胺、 苯基乙基胺、 苄胺、 二苄胺、 苯二胺、 ^ 三氣苯胺、 % y' 甲苯二胺、 二苯基胺、 三苯基胺、 鄰硝基·對氯苯胺、 曱苯胺等。 在該等芳香族胺類中,由於抑制氧化劑所致之唾分解 的效果高’而特佳為萘二胺、笨胺、萘基胺等。 上述芳香族化合物的濃度,較佳. 仪丨土碭0.01〜2〇g/L、更佳 12 200918686 為(M〜10g/L。只要是在該範圍Θ,就可以確切地防止峻的 分解,並且可以防止蝕刻速度的降低。 (過氧化氫) &果用本發明之㈣液進行銅的㈣,則在蚀刻進行 ^程中纟蝕刻液中銅離子、金屬銅變化而產生之亞銅離 Γ增加。因此,可心加過氧化氫作爲心將該亞銅離子 氧化而再生爲鋼離子之氧化劑。 f l =氧化氫可以預先添加到蝕刻液中,也可以在蝕刻的 :。或者,也可以使用預先添加有過氧化氫之钮刻 =在㈣的中途進-步添加過氧化氫。通常,在制的 中返添加過氧化氫的情況較多。 過氧化氫之較佳添加量,根掳 而變化,因而t 產生之亞銅離子的量 、. 不月b以數值—概地規定,例如,如果在㈣ 液中的濃度範圍爲0.01〜20 /L 人 乾圍,則可以容易地蔣產 生之亞銅離子再生爲銅離子。過 將產 述,因應亞銅離子的量改變即:考:加量如上所 和州象物之量的比例等,且二進考慮"刻㈣ 準,只要是本發明所屬技術領域 =間專爲基 地調整。當然,可以-邊測定亞鋼離皆可適當 在亞銅離子濃度增加了的時候添加過氧化,、變化’-邊 以預先測定亞銅離子濃度隨著韻刻的進二或者,也可 化,以此爲基準來添加過氧化氫。 仃X生怎樣的變 亞銅離子雖不作爲銅蝕刻的氧化劑之 在微小量,就具有輔助該哇抑制底切 用’但藉由存 作用之功能。 200918686 亞鋼離子的漠度範圍較佳為5§/乙以Salivary, 2-methylbenzimidazole, 2-undecane, hydrazine, imidazole, 2-phenylbenzimidazole, 2-mercaptobenzimidazole, and the like. Examples of the above-mentioned tri-salt compound include tris, 1,2,4-tris, 5-phenylindole, tris-sodium, 5-amino], 2,4-triazole, benzotriazole , 1-methyl-benzotriazole, tolyltriazole, and the like. Examples of the above tetrazole compound may, for example, be a tetrazole, a 5-amino group, a tetrasodium 5-methyl-1 fluorene-tetrazole, a 5-phenyl-1-indole-tetrazole, a 5-amino group, and a Saliva, 1-phenyl-5-weiyl-1Η-tetrazole, κcyclohexyl·5υ_ΐΗ_tetrasaine, 5bis-1Η-tetrazole, and these ammonium or Na salts, Ζη salts, Q salts , κ salt and other metal salts. Among the exemplified azoles described above, tetrazole compounds are particularly preferred. This is because the performance of not only suppressing the undercut is high, but also the pattern can be clearly formed. Further, among the four-degree sitting compounds, 1H-tetrabit, 5-phenyl-1Η»: azole, 5-amino-1H-tetrazole, 5,5, _bis-115-tetrazole, and The ammonium salt or the genus salt or the like is particularly preferably 1H-tetrazole, 5-amino-1H-tetrazole, and the ammonium-L, is metal salts. It is assumed that these tetrazole compounds can form a protective film thinly and uniformly on the side from the top of the conductor pattern. 200918686 In addition, 5-amino-1H-tetrazole, and its ammonium or metal salt, decomposed by hydrogen peroxide, in the case of regenerating cuprous ions into copper ions and two in the presence of chlorine peroxide, concentration with time Change:: The direction. Therefore, the effect of the aromatic compounding and the inclination described later is added, and the effect is more remarkable than in the case where it is not added. The concentration of H is suitable for the saliva is preferably (M~50g/L, more preferably 〇ι~r is preferably 〇.2~10g/L. As long as the concentration of strontium is at . On the other hand, the concentration of saliva is a decrease in the etching rate below 5 tracks, and it can be confirmed that the portion 8 to be etched is prevented from being etched to prevent short circuit (poor insulation). ^, Object) In order to prevent the oxidizing agent such as hydrogen peroxide, the aromatic compound is added to the aromatic compound in the present invention (hereinafter, also referred to as ": ^ class". At least - "aromatic compounds, excluding heart% compounds". It is not clear that the above aromatic compound inhibits oxygen (4), but we believe that the reason is as follows: (4) The mechanism of knife disintegration is captured by the addition of an oxidizing agent such as chlorine peroxide: a fragrance compound having a strong oxidation effect The role. It is called the fungic radical decomposition, but by pre-adding the upper (four), it will be captured by the aromatic radical by the radical, so that it can inhibit the decomposition of the azole by the hydroxyl radical.吏 氧化 氧化 氧化 , 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 4.6 - Tris(diamidodecyl) phenol (monohydric), benzene, acid or its salt (mono), cresol sulfonic acid or its salt (mono), salicylic acid or its salt (mono), wood sulfonate Acid or its salt (mono), phenol (mono), catechol (binary, hydroxyl asymmetric), xylene hope (mono), gallic acid (ternary), phenylbenzene (one dollar), both Pyrogallol (ternary), o-benzene triazole (ternary), hydroquinone (binary, hydroxy symmetric), 2.6-di-t-butyl-p-nonylphenol (mono), 2,6- — a second butyl-4-ethyl group (unary), 3-butyt-4-yl-p-anisole (mono), etc. In the above, the number of elements corresponds to the number of hydroxyl groups. Among the phenols, a one-component substance is particularly effective compared with a substance of two or more. In addition, in the case of binary (a phenol having two hydroxyl groups) In the case of the case, it has a tendency to be more asymmetric with respect to the center of the ring, and has a higher effect than the phenol having a hydroxyl group symmetrically. Further, the effect of dissolving the high-temperature phenol of 200918686 in water is high. Among the above phenols, the effect of inhibiting the decomposition of the azole by the oxidizing agent is high, and particularly preferred is a benzoic acid or a salt thereof, cresol sulfonic acid or a salt thereof, salicylic acid or a salt thereof, lignosulfonic acid or The salt thereof, 2,4,6-tris(dimethylaminofluorenyl)benzene are classified, etc. Specific examples of the aromatic amines may be exemplified by naphthalene diamine, aniline, cedaramine, methyl strepamine, and dimethyl Aniline, phenylethylamine, benzylamine, dibenzylamine, phenylenediamine, tris-aniline, %y' toluenediamine, diphenylamine, triphenylamine, o-nitro-p-chloroaniline, Anthranil or the like. Among these aromatic amines, the effect of inhibiting the decomposition of saliva by the oxidizing agent is high, and particularly preferred are naphthalene diamine, strepamine, naphthylamine, etc. The concentration of the aromatic compound is preferably丨 丨 丨 0.01~2〇g/L, better 12 200918686 is (M~10g/L. As long as it is in this range, you can It is possible to prevent the decomposition of the severance and prevent the etch rate from being lowered. (Hydrogen peroxide) & If the (4) liquid of the present invention is used for the copper (4), the copper ions and the metal copper in the etchant are changed during the etching process. The produced cuprous copper increases from the enthalpy. Therefore, hydrogen peroxide can be added as a heart to oxidize the cuprous ion to regenerate into an oxidizing agent for steel ions. fl = hydrogen peroxide can be added to the etching solution in advance, or can be etched: Alternatively, it is also possible to use a button in which hydrogen peroxide is added in advance to add hydrogen peroxide in the middle of (4). Usually, hydrogen peroxide is often added to the system. Hydrogen peroxide is preferred. The amount of addition, the root enthalpy changes, and thus the amount of cuprous ion produced by t, the value of the month b is generally specified, for example, if the concentration in the (iv) liquid ranges from 0.01 to 20 /L, The cuprous ion that can be easily produced by Chiang is regenerated into copper ions. After the production, in response to the change in the amount of cuprous ion: test: increase the ratio of the amount of the above and the state of the elephant, and the second consideration of "quote (four) accurate, as long as the technical field of the invention = Adjusted for the base. Of course, it is possible to add a peroxidation when the cuprous ion concentration is increased, and to change the '- side to determine the cuprous ion concentration in advance. Hydrogen peroxide was added based on this. What kind of change in 仃X is not used as a oxidant for copper etching. In a small amount, it has the function of assisting the wah to suppress undercutting. 200918686 The range of the influence of the sub-steel ion is preferably 5 § / B
以下、再更佳爲2 n 更佳為2.5g/L 冉更U 2.0g/L以下、又再更佳 要亞銅離子濃度在5g/L以下,即.…下。、 ρ -Γ ^ 防止姓刻速度的下 降’可以確切地蝕刻欲被蝕刻的部 路(絕緣不良)的發生。亞銅離子 而了以防止短 —, 卞的/晨度的下限沒有特別限 疋,如上所述,藉由存在微 切的作料功能。 ^即具有輔助該讀制底 f 曰用於將亞銅離子濃度維持在上述範圍之過氧化氯添加 =如上所述,可以適當調整,例如,爲了將Μ亞銅離 子再生爲銅離子’必須要2.7g過氧化氫,因而可以根據產 生之亞銅離子的濃度來添加過氧化氫。但是,如果姓刻液 中的過氧化氫過量,則產生氯氣、或發熱等,是危險的, 因而’在能將亞銅離子濃度維持在上述範圍之範圍内添加 較佳。 用於將亞銅離子濃度維持在上述範圍之姓刻液的管理 〇 方法,可以直接測定亞銅離子的濃度,或者,也可以測定 姓刻液的氧化還原電位,將其換算成亞銅離子的濃度。 (其他的添加劑) 爲了提高液體的穩定性,係進行均勻的蝕刻,將蚀刻 後的表面形狀做成均勻,可以依需要在本發明之蝕刻液中 配合選自陽離子表面活性劑、二元醇及二元醇醚中之至少 一種’醇類、醯胺類、陰離子表面活性劑、溶劑、非離子 表面活性劑、兩性表面活性劑、陽離子性聚合物等各種添 加劑。這些添加劑的具體例示如下。 14 200918686 )¼離子表面活性劑.氯化苄烧錢(benzaik〇njum chloride)、氣化烷基三甲基銨等烷基型四級銨鹽等。 一兀醇:乙二醇、二乙二醇、丙二醇、聚亞烷基二醇(亞 烷基的碳原子數爲4〜500左右)等。 二兀醇醚:丙二醇單乙醚、乙二醇單丁醚、3_甲基_3_ 甲氧基丁醇、二丙二醇甲醚、二乙二醇丁醚等。 醇類.甲醇、乙醇、1-丙醇、2_丙醇、丁醇、苄醇、2_The following, more preferably 2 n is more preferably 2.5 g / L, more U 2.0 g / L or less, and even better, the cuprous ion concentration is below 5 g / L, that is, .... ρ - Γ ^ prevents the lowering of the speed of the surname" to etch the portion of the portion to be etched (poor insulation). The cuprous ion is used to prevent short-term, and the lower limit of the enthalpy/morning is not particularly limited, as described above, by the presence of a micro-cutting function. ^There is a chlorine peroxide added to assist in maintaining the cuprous ion concentration in the above range. As described above, it can be appropriately adjusted. For example, in order to regenerate the cuprous ion into copper ions, it is necessary to 2.7 g of hydrogen peroxide, so that hydrogen peroxide can be added depending on the concentration of the cuprous ion produced. However, if the amount of hydrogen peroxide in the surname is excessive, chlorine gas or heat generation is generated, which is dangerous. Therefore, it is preferable to add the cuprous ion concentration within the above range. The management method for the surname engraving for maintaining the cuprous ion concentration in the above range can directly measure the concentration of cuprous ions, or can also measure the redox potential of the surname engraving, and convert it into cuprous ions. concentration. (Other additives) In order to improve the stability of the liquid, uniform etching is performed, and the surface shape after etching is made uniform, and a cationic surfactant, a glycol, and the like may be blended in the etching liquid of the present invention as needed. At least one of the glycol ethers, various additives such as an alcohol, a guanamine, an anionic surfactant, a solvent, a nonionic surfactant, an amphoteric surfactant, and a cationic polymer. Specific examples of these additives are as follows. 14 200918686 ) 1⁄4 ionic surfactant, benzaik〇njum chloride, alkylated quaternary ammonium salt such as vaporized alkyltrimethylammonium. Monoterpene alcohol: ethylene glycol, diethylene glycol, propylene glycol, polyalkylene glycol (the number of carbon atoms of the alkylene group is about 4 to 500), and the like. Diol ether: propylene glycol monoethyl ether, ethylene glycol monobutyl ether, 3-methyl-3-methoxybutanol, dipropylene glycol methyl ether, diethylene glycol butyl ether, and the like. Alcohols. Methanol, ethanol, 1-propanol, 2-propanol, butanol, benzyl alcohol, 2_
苯氧基乙醇等。 醯胺類:Ν,Ν-二甲基甲醯胺、二甲基咪唑啉酮(Dimethy imidazolidinone)、N-曱基吼π各烧酮等。 陰離子表面活性劑:脂肪酸鹽、烷基硫酸酯鹽、烷基 磷酸酯鹽等。 溶劑··二甲基亞颯等亞砜類等 非離子性表面活性劑:聚氧乙烯烷基醚、聚氧丙烯烷 基喊、聚氧乙烯和聚氧丙烯的嵌段聚合物等。 兩性表面活性劑:月桂基二甲胺基乙酸甜菜鹼、十八 烷基二甲胺基乙酸甜菜鹼、月桂基羥基磺基甜菜鹼等甜菜 鹼’月桂基二甲基胺氧化物、胺基羧酸等。 另外,陽離子性聚合物,較佳為溶於水顯示陽離子性 之行爲且分子量爲千以上之物質’更佳為分子量爲數千到 數百萬之高分子化合物。具體例可舉出聚乙烯亞胺、多亞 烷基多胺(polyalkylene polyamine)、四級銨鹽型苯乙烯之聚 合物、四級銨鹽型胺基烷基(曱基)丙烯酸酿之聚合物、2級 銨鹽型二烯丙胺之聚合物、四級銨鹽型二烯丙胺與丙烯醯 15 200918686 胺之共聚物、胺基烷基丙烯醯胺的鹽之聚合物、陽離子性 纖維素衍生物等。上述鹽可例舉出鹽酸鹽。該陽 .» . *卞性& 5 ’較佳為聚乙烯亞胺、多亞烷基多胺。該陽離子性 聚合物可以併用2種以上。另外,上述陽離子性聚合物可 以使用作爲樹脂、纖維的防靜電劑、廢水處理用的高八子 凝集劑、毛髮用沖洗的護髮素成分等市售之物質。阿刀 、本發明之蝕刻液,藉由將上述各成分溶解於水中, 以容易地調製。上述水較佳為離子交換水、純水 等除去離子性物質及雜質之水。 。1 管理反明…液時’爲了對各成分進行濃度 Β理’可以使用補給液。 :給液方面’藉由使用含有下述各成分的補給 以、准持蝕刻液中之各成分。 a) 酸 b) 僅具有氮原子作爲存在於環内的雜原子之唾 Ο選自酚類和芳香族胺類中 物 夕種之方香族化合 該等各種成分較佳係使用與蝕 該補认液d夜同樣種類之物質。 只補…液較佳為含有該a成分 圍、b成分爲0】^ , ”、 7〜36〇g/L之濃度範 成刀4 〇·1〜5〇g/;L之濃度範圍、〇Phenoxyethanol and the like. Indoleamines: hydrazine, hydrazine-dimethylformamide, dimethylimidazolidinone, N-mercaptopurine, and the like. Anionic surfactants: fatty acid salts, alkyl sulfate salts, alkyl phosphate salts, and the like. Solvents, such as sulfoxides such as dimethyl hydrazine, etc. Nonionic surfactants: polyoxyethylene alkyl ethers, polyoxypropylene alkyl groups, block polymers of polyoxyethylene and polyoxypropylene, and the like. Amphoteric surfactant: lauryl dimethylamino acetic acid betaine, octadecyl dimethylamino acetic acid betaine, lauryl hydroxy sulfobetaine and other betaine 'lauryl dimethylamine oxide, amino carboxylic acid Acid, etc. Further, the cationic polymer is preferably a substance which exhibits a cationic behavior in water and has a molecular weight of 1,000 or more. More preferably, it is a polymer compound having a molecular weight of several thousands to several millions. Specific examples thereof include polyethyleneimine, polyalkylene polyamine, quaternary ammonium salt type styrene polymer, and quaternary ammonium salt type aminoalkyl (mercapto) acrylic polymer. , a grade 2 ammonium salt type diallylamine polymer, a quaternary ammonium salt type diallylamine and an acrylonitrile 15 200918686 amine copolymer, an amine alkyl acrylamide salt polymer, a cationic cellulose derivative Wait. The above salt may, for example, be a hydrochloride. The yttrium &5' is preferably a polyethyleneimine or a polyalkylene polyamine. These cationic polymers may be used in combination of two or more kinds. Further, as the above cationic polymer, commercially available ones such as a resin, an antistatic agent for fibers, a high eight agglomerate for wastewater treatment, and a conditioner for hair rinsing can be used. A knife and an etching solution of the present invention are easily prepared by dissolving the above components in water. The water is preferably water such as ion-exchanged water or pure water from which ionic substances and impurities are removed. . 1 When managing the liquid (for the sake of the concentration of each component), you can use the replenisher. In the case of liquid supply, each component in the etching solution is held by using a supply containing the following components. a) acid b) having only a nitrogen atom as a hetero atom present in the ring, the salivation selected from the group consisting of phenols and aromatic amines, and the various components are preferably used and etched. Recognize liquid d night the same kind of substance. It is preferable that the liquid is only contained in the component a, and the component b is 0]^, ”, 7 to 36〇g/L, and the concentration range is 4 〇·1 to 5〇g/; the concentration range of L, 〇
之濃度範圍之補給液。 成刀4 〇_〇1〜20g/L 藉由添加該補給液,適當 比,因而可以穩定地形成底切少之導液的各成分 在錢中,從鋼的溶解穩定性之_考量 16 200918686 酸。在該補給液中,可以進一步以銅離子濃度不超過14吕几 之濃度範圍含有氯化銅。另外,也可以含有上述之添加劑。 通常,如上所述,添加過氧化氫時,唑被過氧化氫分 解而濃度急劇下降,而在本發明中,由於添加有上述芳香 族化合物’因而可以抑制過氧化氫所致之唑的減少。 因此,即使用上述補給液來調節各濃度時,也可以不 用考慮因過氧化氫等氧化劑所致之減少,進行各成分的濃 \ 度管理,而蝕刻液的濃度管理變容易。又,雖無特別限定, 但此時,如果一邊將唑濃度維持在〇1〜5〇g/L 一邊 刻,則如上所述,不僅可以確切地抑制底切,還可以防止 餘刻速度的降低。 斯木使用本發 … μ叫队m夕取配綠圃茶,則可以得 」底切夕的銅配線(也包括銅合金配線’以下相同)。具體而 5 ’例如可以穩定地形成姓刻因子(Etching faet()r)超過5之 ,.s -己線3夕卜,進行敍刻時敍刻液的濃度管理變容易。 在此所私姓刻因子是#,將銅配線的厚度(高度)設爲 τ、將銅配線頂部的寛幅钟 *'Replenisher in the concentration range. The knives 4 〇 _ 〇 1 ~ 20g / L by adding the replenishing liquid, the appropriate ratio, so that the components of the undercutting less liquid can be stably formed in the money, from the dissolution stability of steel _ consideration 16 200918686 acid. In the replenishing liquid, copper chloride may be further contained in a concentration range in which the copper ion concentration does not exceed 14 liters. Further, the above additives may also be contained. In general, when hydrogen peroxide is added as described above, the azole is decomposed by hydrogen peroxide and the concentration is drastically lowered. In the present invention, the reduction of the azole caused by hydrogen peroxide can be suppressed by the addition of the above aromatic compound. Therefore, even when the respective concentrations are adjusted by using the above-mentioned replenishing liquid, it is possible to carry out the concentration management of each component without considering the decrease due to the oxidizing agent such as hydrogen peroxide, and the concentration management of the etching liquid becomes easy. Further, although it is not particularly limited, in this case, when the azole concentration is maintained at 〇1 to 5 〇g/L, as described above, not only the undercut can be surely suppressed, but also the reduction in the residual speed can be prevented. . Simu uses this hair ... μ called the team to match the green tea, you can get the bottom copper wire (also including the copper alloy wiring 'the same below). Specifically, for example, it is possible to stably form an engraving factor (Etching faet()r) of more than 5, and a .s-six line, and it is easy to manage the concentration of the engraving liquid when performing the engraving. Here, the private surname factor is #, and the thickness (height) of the copper wiring is set to τ, and the width of the copper wiring is set to be *'
巾又爲Wl、將銅配線底部的寬幅設 爲W2時,用2T/(W2 糞屮夕括,A 使用本發明之麵刻液而t 。®1是表示 —九 夜而侍到之配線圖案的一個例子的截面 不意圖。參考符號』丁π戳面 之所唬爲在坡璃纖維織物中含浸有環氧樹脂 之所明的玻璃環氧基材、 盼樹脂紙基材、在芳香族氏中3浸有祕樹脂之所謂的 樹脂之所謂的芳香=酿胺纖維不織布中含浸有環氧 基材荨的基板(電氣 閃免 緣材枓)。參考符號2是銅配線。參 17 200918686 符號3是阻触劑樹脂(阻钱劑)。另外,W1表示銅配線頂部 的寬幅’ W2表示銅配線底部的寬幅。如果用本發明之蝕刻 液來形成鋼配線,則可以使銅配線底部的寬幅W2與銅配線 頂部的寬幅W!的差(W2-W〗)減小,可以增大上述蝕刻因子。 〔實施例〕 以下,爲了容易理解本發明,舉出實施例、比較例, 進一步說明本發明,但本發明並不僅限於此等實施例。 (1)關於過氧化氫所致的唾的分解 將表1及表2所示之成分溶解於離子交換水中,調製 貫施例1〜1 3及比較例u之蝕刻液。表1及表2所示的鹽 酸係使用氯化氫的濃度爲3 5重量。/〇者。 另一方面,準備在玻璃環氧基材(日立化成工業製 GEA67N)上黏附有厚度爲12 μηι銅箔之覆銅積層板(印刷 電路板用基材)’在其上黏附厚度爲15μπι的乾膜阻蝕劑(旭 化成製“SUNFORT SPG_152,,),形成線寬與間距⑴以and space) ~ 25μηι/25μηι(線的寬幅爲25μιη,線與線的間隙爲 25μιη)的阻蝕劑圖案。 。接著,使用實施例卜13及比較例卜8的之餘刻液,在 4〇C、噴耗冑G.15MPa的條件下進行喷霧,將未被上述 阻触劑圖案覆蓋的銅錢刻,形成銅配線圖案後,喷霧3 重篁%的氫氧化鈉水溶液,剝離上述乾膜阻蝕劑。 將所得到之積層板切斷,觀察所形成之銅配線圖案的 截面形狀⑽丨_狀),測定銅喊底部的寬幅(I)和頂部 的寬幅(Wl)的差(H),將其設爲表^及表2中之初期的 18 200918686 值0 中所示之比較例1〜8的蝕刻液調製後,在各蝕刻液中添加 過,化氫水(過氧化氫的濃度:35重量%)25g/L,將此方〇 所得之物質在常溫下放置24小時。 工 其後,使用該蝕刻液,用與上述相同之 線圖案,測定銅配線底部 乂 ’’5配 (w2戈),作寬M 2)和頂部的寬幅(π)的差 於表丨及表乳化氫放置後(添加放置後)的值並示 存量。相層析法測定此時之唾的殘 定,因此僅顯示由於用液相層析法難以測 19 200918686 表1 组成 殘&唑ϊ (g/u 成分 1 度 te/U 初期 添加放置後 實施例L 氣化铜 .豫酸 1H —四咕 鄰甲酚-4-磺酸 150 100 12 0,3 3.3 3.4 不能分析 實施例2_ 氣化相 鹽酸 5 —氨基—1H —四唑 2-笨氡基乙醇 2, 4, 6 "三(二甲氨基甲基)苯粉 m 20 1-5 1 3 a.2 3.1 U8 實施例3 氣化铜· 鹽酸 5 -笨基~ 1H ~四咕 丙二醇單乙酸 木.質磺酸钠* 130 m ais ί5 1.5 4,5 4.4 0.13 實施例4 氣化销 鹽酸 5,5'-双-1H-四唑 .鄰甲酚-4-磺酸 100 40 αΐ2 0;5 4Λ A3 0Λ2 實施例5 氣化铜 珐酸 5 ~ - 1H - 29^ 對笨酚磺酸 細 70 8 3 4 7.93 實施例6 氣化铜 .鹽酸 5 -氨基-1H -四峻 木质磺酸钠* 70 40 0,5 1.S a,9 4 0.44 實施例? 氣化铜 鹽酸 5 -氣基-1H-四咬 鄰甲盼—4 —靖酸 140 70 2 0.3 Μ 32 1M 實施例8 氣涵 鹽酸 5 —-氮基一 1H —四吹 水揚酸 270 30 1.8 η 3.2 32 173 實施例夺 氣化铜 键酸 5,5, ~双-1H —呀嗓 苯鹼 m 40 ύΛΖ 0Λ 4.5 4.7 0.11 實施例 10 氣把铜 5-苯基-川-四唑 而二酵单 兒茶酴 t30 60 ΰΛΒ 15 0.3 46 0J 0Λ1 實施例 11 氣化铜 鹽酸 1,8-蟇二胺 140 70 2 0.1 11 S.2 121 實施例 12 氣化铜 鹽酸 5—赛^-iH-四峻 茉胺 270 30 1.8 0.1 3.2 8.9 1.34 實施例 13 氣化钢 建酸 5-氨基-111-四嗓 α _秦基胺 70 40 Οδ 0.1 4J 10.5 029 *日本製紙化學公句製"SANX P252" 20 200918686 表2 组成 殘存吐量_ | 成分 濃度(g/U 初期 添加放置後 (g/u 比較例1 氣細 150 鹽酸 1H-四咕 100 1.2 3,2 13.3 不能分析 把&例2 氣也钢 300 鹽酸 20 5 -氨基—1H —四峻 1.5 3 its α.〇4 2-苯氧基&醇 1 比較例3 氣化銅 130 鹽酸 60 S -笨基,1H —四嗓 αΐ5 4,4 m 0.08 丙二醇輩乙醚 15 比較销4 氣化铜 ioa 鹽酸 40 5, 3'—双-Π1膽辟嗓 W2 4‘3 14.6 0.06 比較例5 氣化铜 200 3 -氨基-1Η -四咕 70 8 3.S 13』 0.G8 70 鹽酸 40 5 -氨基_ 1H -四嗓 0.5 3.8 147 0,01 &較例7 氣化铜 140 鹽酸 70 5 _氨基-1H -四唑 2 3 Ϊ45 0.04 比較例8 氣化铜. 270 30 5 -氣基-11丨-四峻 2 3,1 iU 0,03 如表1及表2所示,各實施例與各比較例相比,即使 添加過氧化氫後放置24小時也都能將銅配線的形狀維持在 良好的狀態。吾人認為這是由於即使添加過氧化氫後,各 種唾也殘存的緣故。 (2)關於連續使用時之唑的濃度變化 接著,測定連續使用蝕刻液時之唑的濃度變化。 調製表1所示實施例2及表2所示比較例2之蝕刻液。 進而,將下述所示成分溶解於離子交換水中來調製補給液。 <補給液之成分> 21 200918686 鹽酸(氯化氫之漠度:35 183心 5-胺基-1Η-四唾i.5g/L 2-苯氧基乙醇ig/L 2,4,6-三(二甲胺基甲基)苯酚3ga 後 將貝施例2及比較例2之蝕刻液分別裝入! l喷霧槽中 在各個噴霧槽令裝入銅鑛板,-邊纟机、喷霧壓 a的條件下進行噴霧將銅省虫亥J,-邊每20秒測定亞 銅濃度(亞銅離子濃度)。并0± 辰此呀,如果亞銅濃度超過〇.65g/jL, 則添加過氧化氫(過氧化氫 乳疋/辰度.35重量%)250μΙ>。上述 銅鍵板係使用以下物f :對在玻璃環氧基材(日立化成工業 製GEA 67N )上黏附有厚度爲35㈣銅箱之覆銅積層板(印 刷電路板用基材)進行戽声& ^ 子又4 18μιη的電解銅鍍所得之者 (3.5cmx3.5cm)。 —上述喷霧處理,對1片鋼鑛板進行2分鐘直到銅完全 溶解’在此期間銅的平均溶解速度爲每分鐘Q 29g/L。另外, 對於實施例2之触刻液,每處理丄片銅錢板,添加Μ上 述補給液。接著’對於實施例2及比較例2之敍刻液,反 覆進仃上述操作’直到處理62片锢 月钔鍍板。接者,在處理結 束後之實施例2及比較例2的蝕列潘φ ^ α 町蝕刻液中,用液相層析法色 測疋唑的殘存量’算出殘存率。 千、、、°果不於圖2的曲線圖中。 由圖2的曲線圖可知,對音 ^ Α 對貫施例2之韻刻液來說,即 使一邊添加過氧化氫一邊連續 刻由於添加特定的 方曰私化合物,因而也可以維持唑的濃度。 (產業利用性) 22 200918686 根據本發明,玎以提供一種鋼之蝕刻液及使用其之導 體圖案之形成方法,該鋼之蝕刻液即使連續或反覆使用, 也可以容易地將唑濃度維持在一定以上,可以於不改變圖 案的頂部形狀之下進行蝕刻。進而,本發明除了適用於印 刷電路板的導體圖案之形成以外,還適用於玻璃基板上之 導體圖案、塑膠基板表面之導體圖案、半導體表面之導體 圖案等各種導體圖案的形成。 【圖式簡單說明】 圖1,表示使用本發明之蝕刻液所得到之配線圖案的一 個例子的截面示意圖。 圖2,表示以實施例2及比較例2之蝕刻液作爲基礎而 使用的銅鍍板連續蝕刻時之唑濃度變化和亞銅濃度變化。 【主要元件符號說明】 1基板 2銅配線 3阻蚀劑樹脂(resist resin) T 銅配線的厚度(高度) W!銅配線的頂部的寬幅 W2銅配線的底部的寬幅 23When the towel is W1 and the width of the bottom of the copper wiring is W2, 2T/(W2 屮 屮 ,, A uses the surface engraving of the present invention and t. ®1 is a wiring for nine nights. The cross-section of an example of a pattern is not intended. The reference symbol is a glass epoxy substrate impregnated with epoxy resin in a glass fiber fabric, a resin paper substrate, and an aromatic The so-called aroma of so-called resin in which 3 is impregnated with a secret resin = a substrate impregnated with an epoxy substrate in an amine-based non-woven fabric (electrical flash-free edge material). Reference numeral 2 is a copper wiring. Reference 17 200918686 Symbol 3 is a contact agent resin (money suppressant). Further, W1 indicates a wide width at the top of the copper wiring 'W2' indicates the width of the bottom of the copper wiring. If the etching liquid of the present invention is used to form the steel wiring, the bottom of the copper wiring can be made The difference between the wide width W2 and the width W! at the top of the copper wiring is reduced (W2-W), and the etching factor can be increased. [Embodiment] Hereinafter, in order to facilitate the understanding of the present invention, examples and comparative examples will be described. The invention will be further described, but the invention is not limited thereto. (1) Decomposition of saliva by hydrogen peroxide The components shown in Tables 1 and 2 were dissolved in ion-exchange water to prepare etching solutions of Examples 1 to 13 and Comparative Example u. And the concentration of hydrogen chloride in the hydrochloric acid shown in Table 2 is 35 wt%. On the other hand, it is prepared to adhere a copper foil having a thickness of 12 μηι on a glass epoxy substrate (GEA67N manufactured by Hitachi Chemical Co., Ltd.). A copper laminate (substrate for printed circuit board) is adhered to a dry film inhibitor (SUNFORT SPG_152, manufactured by Asahi Kasei) having a thickness of 15 μm to form a line width and a pitch (1) and space) ~ 25μηι/25μηι ( The width of the line is 25 μm, and the gap between the lines and the line is 25 μm.) Then, using the residual solution of Example 13 and Comparative Example 8, at 4 〇C, the 胄G. Spraying was carried out under the conditions of 15 MPa, and copper coupons not covered by the above-mentioned resisting agent pattern were formed to form a copper wiring pattern, and then a 3 % by weight aqueous sodium hydroxide solution was sprayed to remove the dry film inhibitor. The laminate is cut, and the cross-sectional shape of the formed copper wiring pattern is observed (10)丨 _ shape), determine the difference between the width (I) at the bottom of the copper and the width (W1) at the top, and set it as shown in Table 18 and the initial 18 200918686 value 0 in Table 2. After the etching liquids of Comparative Examples 1 to 8 were prepared, 25 g/L of hydrogen chloride water (concentration of hydrogen peroxide: 35 wt%) was added to each etching liquid, and the material obtained by the method was placed at room temperature for 24 hours. Then, using the etching liquid, the same line pattern as described above was used to measure the difference between the bottom of the copper wiring 乂''5 (w2), the width M 2) and the width of the top (π). And the value of the table after the emulsifying hydrogen is placed (after the addition), and the stock is shown. The chromatographic method was used to determine the saliva residue at this time, so it was only shown that it was difficult to measure by liquid chromatography. 19 200918686 Table 1 Composition Residue & oxazolium (g/u component 1 degree te/U initial addition after placement Example L gasified copper. 1H - tetradecyl o-cresol-4-sulfonic acid 150 100 12 0, 3 3.3 3.4 can not be analyzed Example 2_ gasification phase hydrochloric acid 5-amino-1H-tetrazole 2-cupyl Ethanol 2, 4, 6 " Tris(dimethylaminomethyl)benzene powder m 20 1-5 1 3 a.2 3.1 U8 Example 3 Vaporized copper · Hydrochloric acid 5 - stupyl ~ 1H ~ tetrahydropropylene glycol monoacetic acid Sodium sulfonate* 130 m ais ί5 1.5 4,5 4.4 0.13 Example 4 Gasification pin 5,5'-bis-1H-tetrazole hydrochloride. o-cresol-4-sulfonic acid 100 40 αΐ2 0; 4Λ A3 0Λ2 Example 5 Gasification copper ruthenic acid 5 ~ - 1H - 29^ Phenol sulfonic acid fine 70 8 3 4 7.93 Example 6 Gasification copper. Hydrochloric acid 5-amino-1H - tetrasodium sulphonate* 70 40 0,5 1.S a,9 4 0.44 Example? Vaporized copper hydrochloric acid 5-air-based-1H-four biting o-to-be--4-jing acid 140 70 2 0.3 Μ 32 1M Example 8 gas culvert hydrochloric acid 5 —-Nitrogen-1H—Four blowing water 1979 30 1.8 η 3.2 32 173 EXAMPLES Gassing Copper Bond Acid 5,5, ~Double-1H-Y-Phenyl Base m 40 ύΛΖ 0Λ 4.5 4.7 0.11 Example 10 Gas Holder Copper 5-Phenyl-Chloro-tetrazole and Fermented Single Tea T30 60 ΰΛΒ 15 0.3 46 0J 0Λ1 Example 11 Vaporized copper hydrochloric acid 1,8-decanediamine 140 70 2 0.1 11 S.2 121 Example 12 Vaporized copper hydrochloric acid 5-赛^-iH-tetrasylamine 270 30 1.8 0.1 3.2 8.9 1.34 Example 13 Gasification of steel acid-based 5-amino-111-tetrahedyl α-methylamine 70 40 Οδ 0.1 4J 10.5 029 *Nippon Paper Chemical Co., Ltd. "SANX P252" 20 200918686 Table 2 Composition residual amount _ | Component concentration (g/U initial addition after placement (g/u comparison example 1 gas fine 150 hydrochloric acid 1H-tetrazol 100 1.2 3, 2 13.3 can not be analyzed & example 2 gas also steel 300 hydrochloric acid 20 5-amino-1H - Sijun 1.5 3 its α.〇4 2-phenoxy& alcohol 1 Comparative Example 3 Vaporized copper 130 Hydrochloric acid 60 S - stupid, 1H - tetraindole α 4 4,4 m 0.08 Propylene glycol Ether 15 comparison pin 4 gasification copper ioa hydrochloric acid 40 5, 3'-double-Π1 biliary sputum W2 4'3 14.6 0.06 Comparative Example 5 vaporized copper 200 3-amino-1Η-tetrazole 70 8 3.S 13』 0.G8 70 Hydrochloric acid 40 5 -Amino_ 1H -Tetraindole 0.5 3.8 147 0,01 &Comparative Example 7 Vaporized copper 140 Hydrochloric acid 70 5 _Amino- 1H-tetrazole 2 3 Ϊ45 0.04 Comparative Example 8 Vaporized copper. 270 30 5 - gas base-11 丨 - Sijun 2 3,1 iU 0,03 As shown in Table 1 and Table 2, each example is compared with each In comparison with the example, the shape of the copper wiring can be maintained in a good state even after leaving hydrogen peroxide for 24 hours. I think this is because even after adding hydrogen peroxide, various kinds of saliva remain. (2) Change in concentration of azole in continuous use Next, the change in concentration of azole when the etching solution was continuously used was measured. The etching liquid of Comparative Example 2 shown in Example 2 and Table 2 shown in Table 1 was prepared. Further, the components shown below were dissolved in ion-exchanged water to prepare a replenishing liquid. <Composition of replenishing liquid> 21 200918686 Hydrochloric acid (hydrogen chloride indifference: 35 183 heart 5-amino-1 Η-tetrasodium i.5g/L 2-phenoxyethanol ig/L 2,4,6-three After (dimethylaminomethyl) phenol 3 ga, the etching liquids of the shell examples 2 and 2 were separately charged into the spray tank. In the spray tank, the copper ore plates were placed in the respective spray tanks, and the side machine and the spray were sprayed. Under the condition of pressure a, the copper concentration is measured every 20 seconds (the cuprous ion concentration) every 20 seconds, and 0± chen, if the cuprous concentration exceeds 〇.65g/jL, then add Hydrogen peroxide (hydrogen peroxide nipple/length: 35 wt%) 250 μΙ> The copper bond plate described above was obtained by attaching a thickness to a glass epoxy substrate (GEA 67N manufactured by Hitachi Chemical Co., Ltd.). 35 (4) Copper-clad laminate of copper box (substrate for printed circuit board), which is obtained by electrolysis copper plating of 4 18 μm, and the above spray treatment, for 1 piece of steel The plate was allowed to stand for 2 minutes until the copper was completely dissolved. During this period, the average dissolution rate of copper was Q 29 g/L per minute. In addition, for the etchant of Example 2, the copper plate for each treatment was processed. The above-mentioned replenishing liquid was added. Then, 'the above-mentioned operations were repeated for the engraving liquids of Example 2 and Comparative Example 2 until the 62 sheets of the 锢月钔 plating were processed. Next, after the end of the treatment, Example 2 and comparison In the etchant pan φ ^ α etchant of Example 2, the residual amount of carbazole was measured by liquid chromatography to calculate the residual ratio. Thousand, , and ° are not in the graph of Fig. 2. In the graph of the sound, it is possible to maintain the concentration of the azole by continuously adding a specific compound to the rhyme solution of the second embodiment, even if hydrogen peroxide is added. According to the present invention, the present invention provides a method for forming a steel etching solution and a conductor pattern using the same, and the steel etching solution can easily maintain the azole concentration at a constant level or more even if it is used continuously or repeatedly. The etching is performed without changing the top shape of the pattern. Further, the present invention is applicable to the conductor pattern on the glass substrate and the conductor on the surface of the plastic substrate, in addition to the formation of the conductor pattern suitable for the printed circuit board. FIG. 1 is a schematic cross-sectional view showing an example of a wiring pattern obtained by using the etching liquid of the present invention. FIG. 2 is a cross-sectional view showing an example of a wiring pattern obtained by using an etching solution of the present invention. And the change in the concentration of azole and the change in cuprous copper during continuous etching of the copper plate used as the base of the etching solution of Comparative Example 2. [Description of main components] 1 substrate 2 copper wiring 3 resist resin T copper Wiring thickness (height) W! Wide width of the top of the copper wiring W2 copper wiring at the bottom of the width 23
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007229134 | 2007-09-04 | ||
| JP2008141133A JP4472006B2 (en) | 2007-09-04 | 2008-05-29 | Etching solution and method of forming conductor pattern |
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| TW200918686A true TW200918686A (en) | 2009-05-01 |
| TWI422711B TWI422711B (en) | 2014-01-11 |
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| JP (1) | JP4472006B2 (en) |
| KR (1) | KR101412281B1 (en) |
| CN (2) | CN101381873B (en) |
| TW (1) | TWI422711B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5599506B2 (en) | 2010-05-26 | 2014-10-01 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Compositions and methods for microetching of copper and copper alloys |
| KR101318733B1 (en) * | 2013-06-13 | 2013-10-18 | 주식회사 에이씨엠 | Ethant composition comprising organic copper complex |
| JP6164614B2 (en) * | 2013-12-06 | 2017-07-19 | メック株式会社 | Etching solution, replenisher, and method for forming copper wiring |
| JP6557575B2 (en) | 2015-10-23 | 2019-08-07 | 株式会社Adeka | Etching solution composition and etching method |
| CN107012465B (en) * | 2017-03-28 | 2019-09-03 | 江苏和达电子科技有限公司 | A kind of copper etchant solution and its application |
| KR101916157B1 (en) * | 2017-04-11 | 2018-11-08 | 켄스코 주식회사 | Etchant additives and etchant using the same |
| JP6736088B2 (en) | 2017-05-22 | 2020-08-05 | メック株式会社 | Etching solution, replenishing solution and method for forming copper wiring |
| KR102743308B1 (en) * | 2017-11-29 | 2024-12-17 | 다이니폰 인사츠 가부시키가이샤 | Wiring board and method for manufacturing wiring board |
| CN110117791B (en) * | 2019-05-23 | 2023-11-10 | 电子科技大学 | Binding force promoter for brown oxide liquid of high-density interconnection printed circuit board |
| CN110418509B (en) * | 2019-07-29 | 2020-10-23 | 广州兴森快捷电路科技有限公司 | Circuit compensation method for meeting specific etching factor requirement of PCB |
| CN110819991B (en) * | 2019-11-08 | 2022-07-15 | 日月光半导体(上海)有限公司 | Etching solution and manufacturing method of package substrate using the same |
| JP7129711B2 (en) * | 2020-01-24 | 2022-09-02 | メック株式会社 | Etching liquid, replenishing liquid and method for forming copper wiring |
| KR102862934B1 (en) * | 2020-09-09 | 2025-09-22 | 동우 화인켐 주식회사 | Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom |
| CN113445052A (en) * | 2021-07-28 | 2021-09-28 | 南通群安电子材料有限公司 | Differential etching solution suitable for MSAP (multiple-site-sensitive protection) process |
| WO2024096006A1 (en) * | 2022-11-01 | 2024-05-10 | 三菱瓦斯化学株式会社 | Aqueous composition for etching, etching method using same, and semiconductor substrate manufacturing method |
| JP7436070B1 (en) * | 2022-11-22 | 2024-02-21 | メック株式会社 | copper etchant |
| CN116145142A (en) * | 2022-12-01 | 2023-05-23 | 江阴润玛电子材料股份有限公司 | Metal alkaline etching solution for panel industry and preparation method thereof |
| CN116732520B (en) * | 2023-08-14 | 2023-11-14 | 昆山市板明电子科技有限公司 | Long-acting side etching inhibition additive for acid etching solution, preparation method and application |
| TW202540500A (en) | 2024-02-21 | 2025-10-16 | 日商Mec股份有限公司 | Etching solution, replenishment solution and method for forming copper wiring |
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| JP3225470B2 (en) * | 1992-12-15 | 2001-11-05 | 旭電化工業株式会社 | Copper Chemical Solvent |
| JP2000282265A (en) * | 1999-03-31 | 2000-10-10 | Mec Kk | Copper or copper alloy microetchant and surface treatment method using the same |
| JP4033611B2 (en) * | 2000-07-28 | 2008-01-16 | メック株式会社 | Copper or copper alloy microetching agent and microetching method using the same |
| US6803354B2 (en) * | 2002-08-05 | 2004-10-12 | Henkel Kormanditgesellschaft Auf Aktien | Stabilization of hydrogen peroxide in acidic baths for cleaning metals |
| KR100960687B1 (en) * | 2003-06-24 | 2010-06-01 | 엘지디스플레이 주식회사 | Etch solution for collective etching of a double metal layer containing copper (or copper alloy layer) |
| TWI282377B (en) * | 2003-07-25 | 2007-06-11 | Mec Co Ltd | Etchant, replenishment solution and method for producing copper wiring using the same |
| JP4224436B2 (en) * | 2003-07-25 | 2009-02-12 | メック株式会社 | Etching agent, replenisher, and copper wiring manufacturing method using the same |
| JP4431860B2 (en) * | 2003-10-30 | 2010-03-17 | 三菱瓦斯化学株式会社 | Surface treatment agent for copper and copper alloys |
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2008
- 2008-05-29 JP JP2008141133A patent/JP4472006B2/en active Active
- 2008-09-02 CN CN2008102143288A patent/CN101381873B/en not_active Expired - Fee Related
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| CN101381873A (en) | 2009-03-11 |
| TWI422711B (en) | 2014-01-11 |
| JP2009079284A (en) | 2009-04-16 |
| CN102691064B (en) | 2015-01-07 |
| CN102691064A (en) | 2012-09-26 |
| CN101381873B (en) | 2012-10-17 |
| KR20090024638A (en) | 2009-03-09 |
| KR101412281B1 (en) | 2014-06-25 |
| JP4472006B2 (en) | 2010-06-02 |
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