TW200918224A - Method for processing brittle material substrate and crack forming apparatus used in the method - Google Patents

Abstract

Provided is a method for processing a brittle material substrate, in which cutting is performed with excellent end surface qualities on a cut surface and excellent linearity. In the method for cutting the brittle material substrate to be cut, the substrate is cut by permitting a crack to develop in the substrate. The substrate is cut by the following steps. In a step (a), a supporting substrate is firmly fixed on the substrate. The supporting substrate permits heat, which reaches the lower surface of the substrate from the upper surface when the substrate is irradiated with a laser beam, to be transmitted from the lower surface of the substrate by heat conduction and operates to generate distortion to form a protrusion in the vicinity of a cut planned line after cooling. Then, in a step (b), the substrate is irradiated with a laser beam by relatively moving the laser beam, and a crack is developed while cutting the substrate by a vertical breakage wherein the crack develops in the thickness direction by being cooled, and in a step (c) firm adhesion between the supporting substrate and the substrate to be processed is released.

Description

200918224 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate to be processed (hereinafter also referred to as "brittle material substrate") composed of a brittle material, which is irradiated with laser light at a temperature lower than a softening point. After cooling by heating, the crack is formed by the initial crack formed on the substrate end as a starting point. The method for processing the brittle material substrate on which the substrate is processed and the crack forming device used in the method. More particularly, the present invention relates to a method for processing a brittle material substrate in which the thickness of the brittle material substrate is thin and the heat generated in the vicinity of the surface of the substrate is directly irradiated from the surface of the substrate to the back surface when the crack is formed by laser irradiation. The "brittle material substrate" of the present invention includes, in addition to the glass substrate, a substrate such as quartz, single crystal germanium, sapphire, semiconductor wafer, or ceramic. The following description is mainly based on a glass substrate, but the same is true for the remaining brittle materials. In order to facilitate the description of the present invention, the "cracking progress" indicates that the crack grows in the direction of the surface of the substrate, and the growth of the crack in the thickness direction (depth direction) of the substrate is referred to as "progression of the crack", thereby distinguishing the two. . [Prior Art] When a brittle material substrate (hereinafter also simply referred to as "substrate") such as a glass substrate is scanned and irradiated with laser light and heated at a temperature lower than the softening point of the substrate, compressive stress is generated in the heating region. Further, blowing the refrigerant in the vicinity of the irradiation of the laser light causes tensile stress in the cooling region. A region where tensile stress is generated is formed in the vicinity of the region where the compressive stress is generated as described above, thereby forming a stress gradient. In recent years, cracks have been formed on the glass substrate by using this stress gradient, and 5 200918224 has been used for performing scribing processing on the surface of the substrate (for example, refer to the patent literature) or to perform full cutting processing (for example, refer to Patent Document 2; 3) Here, the scribing process refers to a process of forming a scribe line on a substrate by forming a depth that does not reach the back surface of the substrate (for example, a depth of about 1 to 20% of the plate thickness). Thereafter, the substrate can be cut by performing a breaking process of pressing the breaking bar along the scribe line to apply a bending moment. On the other hand, the full cutting process forms a process of cracking from the surface of the substrate to the back surface of the substrate without breaking. In the case of the processing, the substrate can be cut. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. When the laser heating and the quenching of the substrate form a stress gradient to cut the glass substrate, as described above, there is a cutting mode in which the breaking process must be performed after forming the scribe line ( The cutting mode for the scribing mode and the cutting mode (which is called the full cutting mode) without cutting the substrate. The scribing mode and the full cutting mode are established, although due to heating conditions ( The curing conditions such as laser wavelength, irradiation time, irradiation energy, scanning speed, etc., or cooling conditions (refrigerant temperature, blowing amount, blowing position, etc.) are mainly determined by the thickness of the glass substrate. When the thickness of the glass substrate is thin, the treatment range of the domain that can be established by the Guardian can be formed (the various processing conditions that can form a normal scribe line • w 1 dry ij sigh range) becomes small, and it becomes easy to become a full cut. Processing. Since the cutting process is not necessary, the processing of the beer is not required to be broken. Therefore, the advantages of the processing of 200918224 can be expected. However, there is a tendency that the frequency of cracks does not progress linearly, and it is impossible to expect a cutting with high precision. On the other hand, as the thickness of the glass substrate increases (especially, the plate thickness is 1 mm or more), the full cutting processing mode becomes difficult. The scribe line processing mode tends to be established. In heating conditions or cold The condition is not the maximum material, and the difference in the cutting modes varies depending on the stress distribution generated during heating or cooling or the thickness of the strain random plate. The relationship between the stress distribution and the strain and the cutting mode will be described below. «Thick plate substrate ▲ Let me talk about the condition of a thick glass substrate with a thick moon. Here, the condition of thicker plate thickness means that the laser light is irradiated on the substrate, and the heat (high temperature) generated in the vicinity of the substrate is transmitted to the inside of the substrate. Since the thickness of the substrate is thick enough, the heat is transmitted to the inside of the substrate without heat transfer to the underside of the substrate. In the case of the material glass substrate, the thickness of the material above lmm is transmitted to the inside of the substrate. Fig. 6 is a view showing a stress applied to a substrate when a glass substrate having a thickness of i coffee or more (hereinafter referred to as a thick plate substrate in a book (4) is irradiated with a laser and cooled to cause cracks to enter. Schematic diagram of the distribution, Fig. 6 (4) is a perspective view of the substrate, and Fig. 6 (b) is a plan view. (4) Fig. 7(b) and Fig. 7(c) are diagrams illustrating the Α·Α, Fig. 6, Β-Β' section, C_C, temperature distribution and stress distribution of the section respectively. It is noted that 7(a)i 7(b) and Fig. 7(c) are caused by changes in the temperature of the knife and the stress distribution at the same point as the light spot and the cooling point cs. Laser light irradiated by a laser beam irradiation mechanism (not shown); 200918224 An oblong spot B S is formed. After the spot BS, a cooling point CS of a crucible shape is formed by a refrigerant sent from a cooling mechanism (_ 忐Π m (not shown). The spot BS is cold-cooled ^ /, and the cold spot CS is kept at a small interval. The grievances on the slab substrate GA are engaged in the slogan, and the sergeant first forms an initial crack. One of the cakes is scanned along the cutting line SL to the other end side. The thick substrate is near the top of the plate. ^通(四) Compressive stress is generated in the vicinity of the heated area under the influence of the expansion caused by heating | indicated by a dotted arrow in the figure). Thereafter, a tensile stress (indicated by a solid arrow in the figure) due to the temperature distribution of the (four) plate substrate 产生 is generated in the vicinity of the cold region by the passage of the cooling point cs. The following is based on Figure 7 to illustrate the changes that have occurred in the house. The stress on the GAN portion of the thick plate substrate and the twisting of the thick plate substrate GA due to the passage of the spot Bs of the laser light form a heating portion HR inside the substrate as shown in Fig. 7 (4), and the heating portion is caused by local expansion. Shrinkage stress (indicated by a dashed arrow in the figure).

After the so-called cooling point c s, you can see that you, ® two, π k too low / dish and as shown in Figure 7 (b) on the surface

The cooling portion CR is formed in the vicinity, and the cooling crack is a tensile stress generated by local contraction (indicated by a solid arrow in the figure). In the case of the thick substrate GA, the heating portion HR is gradually transferred to the substrate 4, but since the substrate is thick, the crack does not reach the back surface when the crack is formed, and the heating portion HR is stopped inside the substrate. Then, as shown in FIG. 7(c), after the low temperature is gradually transmitted from the surface layer of the thick substrate GA due to the formation of the cooling portion CR, the cooling portion cr exists in the vicinity of the upper surface of the substrate (for example, a depth of 1% to ≤ the thickness of the substrate) ), the heating part is taken below 200918224. Since the heating portion hr is a portion where compressive stress occurs, it can also be referred to as an internal compressive stress field Hin existing inside the substrate. By forming an internal compressive stress field Hin on the thick substrate GA and forming a tensile stress near the upper surface of the substrate, an upward convex strain is locally generated on the thick substrate GA, and the substrate is caused to be bent in the same direction as the tensile stress on the substrate. The force of the song (indicated by a little chain arrow). Further, in Fig. 7(c), the deformation caused by the strain caused by the thick plate substrate ga is exaggerated in order to facilitate the direction in which the deflection is not exhibited. . . . , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , As described above, the state in which the crack C is formed in the thickness direction (deepness: longitudinal direction) (or the state in which the crack is actually formed) is referred to as a state of "knife". In the case of the slitting state, the crack is small and the straightness is good, and the straightness is good. It is ideal (4)^ (However, in the slit state, there is an internal compressive stress field on the thick plate substrate, so the progress has been made as described above. Will be hindered by r internal stress field

Shi Wei went to the obstacle again, and stopped near the compressive stress field of the gA portion of the thick plate. Cracks [progression will be caused by the fact that the thick plate substrate GA crack c is difficult to form a crack near the top surface of the substrate plus 1 to the back side becomes a wedge type due to the formation of the base, ... the scribe line plus the temperature gradient The stress gradient makes the crack progress in the direction of high temperature and low temperature, and the concave and convex two processing modes are obtained, which has the characteristics of being able to be processed. The cut surface of the line with high precision is not completely cut. 200918224 <<Sheet plate substrate>> Next, a glass substrate having a small thickness will be described. Here, the case where the thickness is thin is that the laser light is irradiated on the substrate, and when the heat (high μ) generated in the vicinity of the substrate is transmitted to the inside of the substrate, since the thickness of the substrate is thin enough, the heat is formed when the crack is formed. Pass to the bottom. Specifically, in the case of a glass substrate, 1 mm is not full, and in particular, a plate thickness of 0.7 mm tends to have heat generated when cracks are formed. Further, when the thickness of the plate is thin, the low temperature transmitted to the substrate due to the passage of the cooling point will quickly reach below. FIG. 8 is a view showing a glass substrate having a thickness of less than 丨mm (referred to as a 4-plate substrate in the present specification). For example, a surface of a glass substrate having a thickness of about 7 mm is irradiated with a laser and cooled to cause cracks to progress. A schematic diagram of the stress distribution generated on the substrate during the process. Fig. 8(a) is a perspective view of the substrate, and Fig. 8(b) is a plan view. [Fig. 9 (a), Fig. 9 (b) and Fig. 9 (c) respectively illustrate the temperature distribution and stress distribution after laser irradiation of the 〇_D, section, EE, section, and F_F' sections of Fig. 8 Schematic diagram. In Fig. 8, an elongated circular spot BS is formed by laser light irradiated from a laser light irradiation means (not shown). A circular cooling point cs is formed by the refrigerant blown from the cooling mechanism (not shown) after the spot BS. The spot BS and the cooling CS and the 'holding interval are small § the distance of the sec. on the thin-plate substrate GB from the one end side of the initial crack TR formed before the cutting line S] L is swept to the other end side, and this is At the time of the vicinity of the upper surface of the thin plate substrate GB, a compressive stress 200918224 (indicated by a broken line arrow) is generated under the influence of the expansion caused by the heating in the vicinity of the region where the light is passed by the light spot BS. Thereafter, tensile stress is generated in the vicinity of the region which is cooled by the passing of the cooling point cs under the influence of shrinkage by cooling (indicated by solid arrows in the figure). As a result, in the vicinity of the upper surface of the thin plate substrate GB, a stress gradient in which the front (distal side) is the compressive stress 'behind (near side) is a tensile stress. At this time, the stress distribution in the vicinity of the upper surface of the thin plate substrate GB is "transversely cut" (described later in detail), that is, a state in which cracks are desired to be formed in the surface direction. The stress and strain generated in the inside of the thin plate substrate GB will be described below based on Fig. 9 . The heating portion HR is formed inside the substrate as shown in FIG. 9(a) by heating the thin plate substrate GB by the light spot Bs of the laser light irradiated on the substrate, and the heating portion HR is subjected to compressive stress due to local expansion (in the figure) Not shown by the dotted arrow. At this time, since the thickness of the substrate is thin, the heating portion HR reaches the lower surface of the substrate GB when the crack is formed.

Thereafter, the cooling portion CR is formed near the surface as shown in Fig. 9(b) due to the low temperature at which the cooling point cs passes. When the thin plate substrate GB is used, the cooling portion CR immediately reaches the center of the thin plate substrate GB. After the low progress is conveyed, as shown in Fig. 9(c), the cooling portion cr reaches below the thin plate substrate GB. As described above, since the high temperature and low/m of the thin plate substrate GB are rapidly transmitted from the upper surface of the seesaw substrate GB to the lower surface, it is difficult to maintain the stress gradient due to the temperature gradient in the thickness direction of the substrate. Even if the stress gradient in the thickness direction of the substrate can be formed first, because the thickness of the substrate is thin*, the range of the high temperature 200918224 and the low temperature is small, so the magnitude of the compressive stress and the tensile stress are limited. Therefore, the thinning substrate is scribed. The mode is difficult to establish, and even if it is established, it is difficult to stabilize the processing because the processing range (the settable range in which various processing conditions can be formed by normal scribing) becomes small. Therefore, in the thin plate substrate GB, the stress gradient caused by the temperature gradient generated along the line to be cut due to the presence of the region heated by the spot BS to the lower surface and the region to be cooled by the cs& The crack is carried out. That is, in the state where the heating portion HR and the cooling portion CR exist from the upper surface to the lower surface of the thin plate substrate GB, respectively, the stretching from the upper surface to the lower side of the thin plate substrate is generated in the vicinity of the boundary between the heating portion hr and the cooling portion CR. stress. As a result, the crack from the top of the thin plate substrate to the bottom will

From the cooling part CR to the direction of the 埶 & & 丨 丨 丨 丨 丨 丨 丨. Therefore, the full cut processing mode is easy to establish. In addition, since the crack in the brittle material is extremely fast, the crack immediately after the arrival reaches the vicinity of the heating portion immediately, and the crack is stopped by the compressive stress of the heating portion. The state in which the above-mentioned valleys are easily formed into a crack in the direction of the surface (or the state in which the crack is actually formed) is referred to as a "cross-cut" state. The cut surface of the crack which is formed in the cross-cut state is smoother than the cut surface which is mechanically cut by a cutter, for example, but the straightness of the crack can be damaged as compared with the crack formed by the slit. The general reason is that the crack is carried out, the tip of the crack is slightly shifted near the position HR (compression stress field), and the crack in the cross-cut state is repeated and stopped at a slight distance with the movement of the heating portion hr and the cooling portion CR. 'Accumulate the positional offset of the crack tip at the time of stop. 12 200918224 When the thin plate substrate GB is as described above, the cross-cutting state causes the crack in the face-to-face direction to occur easily. If the crack is caused by the cross-cutting of the thin-plate substrate, since the thickness is thin, it is easy to realize the cutting of the full-cutting processing mode without breaking, but there is a cut when compared with the cut surface of the slit There are many problems with uneven surface and poor straightness. Here, the present invention provides a processing method and a cutting method for cutting a slit having a good end face of a cut surface and having a good straightness when the substrate made of a brittle material such as a glass substrate is cut in a stable manner. The purpose of the crack forming device of this method is for the purpose. Moreover, the present invention is a method for processing a full cutting process in a slitting state in which a substrate made of a brittle material is subjected to a full cutting process in a non-transverse state or a slitting process in a slit state. A crack forming device for use in the method is intended. In order to solve the above problems, the brittle material substrate processing method of the present invention is such that the laser light is moved relative to the substrate to be processed composed of the brittle material and irradiated along the line to be cut to be heated at a temperature lower than the softening point thereof. By cooling, the crack is formed from the initial crack formed at one end of the planned cutting line along the line to be cut, and the method of processing the brittle material substrate which forms a crack on the substrate to be processed is composed of the following steps: (a) When the laser beam is irradiated from the lower surface of the substrate to be processed, the heat from the upper surface of the substrate to be processed to the lower surface and the upwardly convex strain is applied to the substrate to be processed which is generated in the vicinity of the line to be processed after cooling (b) The step of fixing the substrate to be bonded to the support substrate by the step (c) of moving the laser light against the upper surface of the substrate to be processed and then cooling to cause the crack to proceed. 13 200918224 The support substrate is fixed to the substrate to be processed by the present invention. The fixed supporting substrate is capable of conducting heat from the upper surface of the substrate to be processed from the lower surface of the substrate to be irradiated to the lower surface of the substrate, and causing the upward convex strain to be generated near the cooled cutting line. . Thereafter, the laser light is moved relative to the substrate to be processed to which the support substrate is fixed, and is irradiated along the cutting predetermined line, and then cooled. Thereby, a temperature distribution and a stress distribution similar to a thick plate substrate can be produced on the composite substrate to which the substrate to be processed and the support substrate are fixed. As a result, the scribing processing mode can be established for the synthetic substrate, and a scribe line is formed on the upper surface of the synthetic substrate (i.e., the upper surface of the substrate to be processed). When the substrate to be processed which constitutes the upper surface of the composite substrate is observed, the synthetic substrate is v-stitched, and substantially the entire cutting process of the substrate to be processed having a small thickness is completed in the slit state. Thereafter, by performing the step of removing the fixed state of the support substrate constituting the composite substrate and the substrate to be processed, the substrate to be processed which is completely cut and cut can be slit. Further, even if the thickness of the substrate to be processed is thin, the crack can be stably formed in the scribing processing mode, so that cracks excellent in straightness can be formed. According to the present invention, since the substrate to be processed into a thin plate substrate can be regarded as a composite substrate by fixing the support substrate as a composite substrate, it can be processed under conditions similar to those of the thick plate substrate (dashing As a result, the entire substrate can be substantially cut in the slit state in the substrate to be processed. Therefore, when the thin-plate substrate is cut, the entire cutting process or the scribing process by the slitting is not performed by the full cutting process of the cross-cutting, so that the end face quality and straightness of the cut 14 200918224 surface can be achieved. Cut off. (Other subject solving means and effects) In the above invention, the same material can be used for the substrate to be processed and the supporting substrate. For example, when the substrate to be processed is a glass substrate, a glass substrate of the same material can be used for the support substrate. In this way, since the substrate to be processed and the support substrate substantially constitute a single thick plate substrate, the cutting mode equivalent to the scribing processing mode of the thick plate substrate is established, and the cutting process can be completely cut for the substrate to be processed. In the above invention, the substrate to be processed and the support substrate may be materials having substantially the same coefficient of linear expansion. Therefore, when the heat is transferred from the lower surface of the substrate to the support substrate, the substrate side is heated first to generate a temperature gradient, so that the substrate to be processed is first expanded, and the substrate to be processed is easily formed to be convex upward due to deflection. The strain 'can make the slitting state easy to occur. In the above invention, the substrate to be processed and the support substrate may be materials having substantially the same thermal conductivity. Therefore, when the heat is transmitted from the lower surface of the substrate to the support substrate, the substrate to be processed has the same internal compressive stress as the thick substrate, so that the same scribing processing mode as the thick substrate can be used. Promote the slitting of the substrate to be processed. «Fixed method" (1) Freezer chuck Further, in the step (a) of the above invention, the lower surface of the substrate to be processed and the upper surface of the support substrate are fixed by the ice layer. 15 200918224 By this, the upper surface of the substrate can be fixed with a cold image clamp fixed with ice layer. After that, the spleen and the spleen can dissolve the ice layer and simply release the fixing state. (2) Adhesive layer Further, in the step (4) of the above invention, the lower surface of the substrate to be processed and the upper surface of the support substrate are fixed through the adhesive layer. Here, the adhesive forming the adhesive layer may be a material which can dissolve the substrate to be processed by dissolving the solvent after the substrate is attached. Specifically, a thermoplastic resin such as phthalic acid imide may be used as an adhesive, and water or an amine or a mixed solution of water and an amine may be used as a solvent. Further, the substrate to be processed may be attached to the support substrate by using an adhesive sheet having a low adhesion or peeling due to uv light, and the substrate may be detached from the support substrate by irradiating the UV light. Thereby, the lower surface of the substrate to be processed and the upper surface of the support substrate can be fixed by an adhesive, and then the solvent can be applied to the fixed surface to easily release the fixed state. Further, the underside of the substrate to be processed of a predetermined range can be completely fixed to the upper surface of the f-support substrate by fixing with an adhesive layer.

Further, in the above invention, the substrate to be processed is a glass substrate, and the thickness thereof is preferably 1 mm or more and 1 mm or less. Thereby, the substrate to be processed is a thin plate thickness, and the heat is transmitted to the underside of the substrate when the laser is irradiated on the substrate, so that the substrate can be regarded as a thick plate substrate by smashing the support plate on the substrate to be processed. mode. Further, the crack forming apparatus of the present invention which is completed by another viewpoint includes a Ray 16 200918224 light irradiation means, a cooling mechanism, and a scanning mechanism for moving the laser light irradiation means and the cooling mechanism to the substrate to be processed. The laser light irradiation mechanism moves relative to the substrate to be scanned to sweep the spot of the laser light along the (four) predetermined line of the substrate to be heated and heats the upper surface of the substrate to be processed at a temperature below the softening point, and then causes the cold portion mechanism to follow the spot The trajectory is relatively moved to cool the substrate, thereby forming a crack along the line to be cut. The main structure includes a support substrate on which the substrate to be processed is placed, and the lower surface of the substrate to be processed is fixed to the support substrate before the crack is formed. The loading and unloading means for releasing the fixed state after the crack is formed, the branch substrate is irradiated with the laser light in a state in which the substrate to be processed is in a state of being guided, and is guided from the upper surface of the substrate to be processed from the upper surface of the substrate to be processed. The heat is generated, and the material which is generated by the strain near the line to be cut after cooling is formed. «Action" a. Support substrate According to the present invention, the substrate to be processed is placed on the support substrate, and the lower surface of the substrate to be processed is fixed to the support substrate by means of attachment and detachment means. When the support substrate is irradiated with laser light in a state in which the substrate to be processed is fixed, heat from the upper surface of the substrate to be processed is transferred from the lower surface of the substrate to be processed, and the upward convex strain is strained after cooling. The material produced near the predetermined line is formed. Therefore, the temperature distribution and the stress distribution of the thick plate substrate can be produced by the composite substrate on which the substrate to be processed and the support substrate are fixed. As a result, the scribing processing mode can be established for the synthetic substrate to form a scribe line. At this time, if the substrate to be processed is observed, the entire cutting process of the substrate to be processed is substantially cut by scribing. After that, the fixed state is released by the loading and unloading means, and the substrate to be processed which is completely cut in the slit state can be obtained at 17 200918224. b. Material of Support Substrate In the above invention, the support substrate can be formed of substantially the same material as the substrate to be processed. As a result, since the substrate to be processed and the support substrate substantially constitute a single thick plate substrate, the cutting mode equivalent to the scribing processing mode of the thick plate substrate is established, and the cutting process for the substrate to be processed can be realized. c. Freezer chuck In the above invention, the attaching and detaching means is constituted by a cold-collar chuck in which the ice layer is formed on the interface between the support substrate and the substrate to be fixed, and the ice layer is dissolved to release the fixed state. ^This is not limited by the fact that the temperature of the east chuck is simply adjusted to the temperature of the substrate. However, the composition of the ice chuck is not particularly limited, but can be used, for example, in the formation of ice layers and the dissolution of ice layers. Component, just switch

The polarity of the voltage applied by the ear element can switch the cold bead and dissolve, so it is a simple device. d. Adhesive agent, solvent, and the above-described invention towel loading and unloading means may be supplied with a solvent for supplying a solvent for dissolving the adhesive to the interface between the support substrate and the soil to be processed, and the interface between the substrate and the substrate. The mechanism of the adhesive supply mechanism and the solvent supply mechanism can be separately obtained from the agent. The through hole supplies an adhesive to the surface of the support substrate and dissolves. In the above invention, the attaching and detaching means can be constituted by a vacuum chuck which can penetrate the lower surface of the substrate to be processed through a plurality of small holes formed in the support substrate. Here, the plurality of small holes formed in the support substrate must reduce the distance between the adjacent small holes to prevent the substrate from being bent and partially separated by heating. For example, a support substrate having a plurality of small holes can utilize a porous member such as a porous ceramic as a support substrate for vacuum adsorption. Thereby, the suction of the plurality of small holes formed in the support substrate can fix the entire lower surface of the substrate to be processed, and then the fixation can be released by stopping the suction, so that the fixing operation and the separation operation can be easily switched. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiments described below, and various aspects are included without departing from the spirit and scope of the invention. [Processing Method] The processing method of the present invention will be initially described. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 丨 is a view showing the flow of a method of processing a brittle material substrate according to an embodiment of the present invention. First, a thin plate substrate as a substrate to be processed GS and a support substrate GT as a processing jig are prepared (Fig. 1 (a)). The support substrate GT is fixed to the substrate GS to be processed, and when irradiated with the laser light, the heat from the upper surface of the substrate to be processed is transferred from the lower surface of the substrate GS to the lower surface, and the substrate GS can be generated upward. The material of the convex strain can also induce a material in the slit state on the substrate GS to be processed. 19 200918224 Specifically, when the substrate to be processed GS is a thin plate substrate made of glass (for example, a plate thickness of 0·01 to 1_0 mm), a glass substrate of the same material (for example, a plate thickness of 2 mm) is prepared by the support substrate GT. The heat distribution and stress distribution substantially the same as that of the thick plate substrate made of glass can be achieved. In addition, the term "the same material" as used herein is judged by the general name of glass 'sapphire and sapphire. For example, even if there is a difference between the manufacturer, the product name, and the specifications, the same material is included as long as the glass material is the same. Further, even if the support substrate GT of a different material has a material having a substantially linear expansion coefficient similar to that of the substrate GS to be processed or a material having the same thermal conductivity as that of the substrate GS to be processed, the substrate GS can be caused to be slit. Further, the support substrate GT can be fixed to the same size as the substrate Gs to be processed or larger than the substrate GS to be processed, and can be fixed in a predetermined range below the substrate GS to be processed. If necessary, the media layer of the substrate to be processed GS is fixed on the upper surface of the support substrate GT. That is, the water layer is formed by the use of the freezing chuck, and the adhesive layer is formed by the bonding agent. When using a vacuum chuck, the media layer is not required. ^ In appearance, the vacuum layer can function as a media layer. Further, the predetermined range in which the substrate to be processed GS and the support substrate GT are fixed is such that the high temperature generated by the irradiation of the laser light is transmitted from the substrate GS to the support substrate GT, and the high temperature is transmitted so that the compressive stress generated on the support substrate is sufficiently applied to The range of processed substrates. Therefore, the frozen water layer or the adhesive layer, i.e., the media layer, conveys the high temperature transfer from the substrate to the substrate gs to the support substrate GT and the stress between the substrate GS and the support substrate GT. In addition, in the case of using a vacuum chuck, the high temperature and stress are transmitted by the contact of the substrate GS fixed to each other with the vacuum layer and the support substrate GT. The specific range in which the substrate to be processed GS and the support substrate GT are fixed is, for example, a range corresponding to the thickness of the substrate GS to be irradiated around the range irradiated with the laser light, that is, a high-temperature transmission which is received by the irradiation of the f-light. The range necessary to support the substrate. Further, if a thickness corresponding to the thickness of the processed substrate feGS and a thickness corresponding to the thickness of the support substrate GT are added around the range irradiated with the light spot, it is sure to include the temperature which is transmitted to the support substrate. The range of compressive stresses generated. The wider the specific range in which the substrate to be processed GS and the support substrate GT are fixed, the higher the temperature at which the substrate to be processed is applied by the laser light irradiation, the more reliably it can be transmitted to the support substrate, and the compressive stress generated at the high temperature to be transmitted is surely applied to the Processing the substrate. On the other hand, when the high temperature is applied to the substrate to be processed due to the irradiation of the laser light, the specific range in which the substrate to be processed GS and the support substrate GT are fixed may be smaller than the irradiation range of the laser light. The specific range in which the substrate to be processed GS and the support substrate GT are fixed is the range in which the water layer is formed or the range in which the water layer is frozen when using the freezing chuck, and the range in which the adhesive layer is formed when the adhesive is used is utilized. The vacuum chuck is the range in which the vacuum layer is formed. Further, the entire lower surface of the substrate to be processed GS may be fixed to the support substrate gt. The case where the entire lower surface of the processed substrate GS is fixed to the support substrate GT will be described below. Then, the entire upper surface of the support substrate GT and the lower surface of the substrate GS to be processed are fixed through the dielectric layer to form a composite substrate gu (Fig. 1(b)) for bonding the substrates. 21 200918224 When the substrate is fixed and the freezing chuck is used, the water layer is frozen into ice layer.

When the adhesive is used for fixing the substrate, the substrate Gs to be processed is placed on the adhesive layer which is applied as a dielectric layer VI on the support substrate gt. Alternatively, a through hole (not shown) that sends an adhesive from the lower surface of the support substrate GT to the upper surface may be formed in a state in which the substrate GS is placed on the support substrate GT and penetrates the through hole to the support substrate GT and processed. An interface is supplied to the interface of the substrate Gs. When the vacuum chuck is used for fixing the substrate, a porous ceramic substrate is used for the support substrate GT so that the lower surface of the substrate to be processed gs is entirely the adsorbed surface. The substrate GS to be processed is placed on the support substrate GT, and the vacuum pump is started to vacuum-adsorb the substrate to be processed by supporting the porous surface of the substrate GT as an adsorption surface. Then, the laser light wi is relatively moved and irradiated along the line to cut of the substrate to be processed GS which is set on the synthetic substrate Qu, and then the refrigerant W2 is blown (Fig. 1 (c)).

«y ^丨4丄口<祝坶运成线线) acts in the same direction as the tensile stress. :use. In addition, the force (single chain 22 200918224 on the processed substrate GS due to deflection and force

Thereafter, the fixed state of the support substrate GT and the substrate Gs to be processed is released (the figure is subjected to the tensile stress to form a strong longitudinal state to the internal compressive stress region Hin), and the processed object l1 (d) )). When the freezing chuck is used for fixing the substrate, the ice layer is dissolved by heat to release the fixing state. When the adhesive is fixed to the substrate, a solvent for dissolving the adhesive layer is supplied to the interface. Therefore, a through hole (not shown) for discharging a solvent is formed on the support substrate GT, and a solvent is supplied to the interface between the support substrate GT and the substrate Gs through the through hole. When the vacuum chuck is used for fixing the substrate, the vacuum pump is stopped to supply air to the adsorption surface (porous surface) of the support substrate GT. Thereby, the substrate GS to be processed which is cut in the slit state can be obtained by detaching the substrate GS to be processed from the support substrate GT. Further, the above method can be applied not only to the scribing process when the substrate to be processed is completely cut. Similarly to the case of scribing a thick plate substrate, the depth of crack formation can be adjusted by changing processing conditions such as heating conditions and cooling conditions. Next, a crack forming apparatus for cutting a thin plate substrate by the above-described method of processing a brittle material substrate will be described. 23 200918224 [Device configuration 1: cold; east chuck] Fig. 3 is a view showing a schematic configuration of a crack forming apparatus according to an embodiment of the present invention. In the present embodiment, the glass substrate (processed substrate) is fixed to the support substrate by a freezing chuck. In the present embodiment, since the support substrate 22 can also function as a table on which the substrate to be processed is placed in the conventional crack forming apparatus, it is not necessary to provide it in the conventional crack forming apparatus. In the present embodiment, the configuration of the heat exchange mechanism 27, the pierer module 26, the support substrate 22, and the substrate to be processed is placed on the stage (the line is simply indicated by a straight line in FIG. 3). However, the heat exchange mechanism 27, the petier module 26, the support substrate 2, and the substrate to be processed may be placed on a table provided in a conventional crack forming device. The crack forming apparatus 1 is mainly composed of a movable portion 1 1 that performs laser irradiation or refrigerant blowing, and a fixed portion 21 that supports the substrate 50 to be processed. The movable portion 1 1 is a laser irradiation unit 1 that integrally supports the light spot B s that irradiates the laser light, and the refrigerant (water and air, helium gas, nitrogen gas, carbon dioxide gas, and the like) that is supplied from a refrigerant source (not shown). The nozzle is sprayed to form a cooling portion 13 of the cooling point CP, a cutter wheel 14 that forms the initial crack TR, and a drive mechanism 丨6 that moves over the substrate 15 on the substrate 15. Here, the light source of the laser irradiation unit 丨2 used for cutting the glass substrate uses a carbon dioxide laser, a carbon monoxide laser, and a far-infrared laser (here, the far-infrared laser includes a far-infrared laser, #Includes a far-infrared source that uses a non-laser source to cause the far-infrared wavelength of light to be reflected by the lens optics to produce a spot that is equally illuminated. Outside, when the substrate material of the substrate to be processed is sapphire, use carbon dioxide laser, far red 24 200918224

Outside laser. Further, when the substrate material is a stone substrate, a YAG laser or a UV laser is used. The fixing portion 21 is a water supply mechanism that supports the support substrate 22 in a state of being in contact with the entire lower surface of the substrate to be processed, and the water supply is supplied from the water source 24 by the opening and closing of the valve 23, and the upper surface of the support substrate 22 is covered with a water layer. 25. The Peltier module 26 that is in contact with the lower surface of the support substrate 22 and the heat exchange mechanism 27 that is in contact with the lower surface of the Peltier module 26, so that the fixing portion 2 1 functions as the freezing collet 2 1 function. The support substrate 22 is a glass substrate of the same material as the substrate 5 to be processed. The thickness of the support substrate 22 is such a thickness that the internal compressive stress field can be formed when the substrate to be processed 5 and the support substrate 22 are fixed and the laser light is irradiated, and the heat distribution and stress distribution equivalent to the thick plate substrate are generated as described above. The Peltier module 26 has a Peltier element built in, and a power source that can switch the polarity of the applied voltage is connected to the Peltier. By means of the Peltier element

The K voltage application cools the water layer between the support substrate 22 and the jade substrate 5 () into an ice layer' and dissolves the ice layer by switching polarities. The heat exchange mechanism 27 is connected to the constant temperature tank flow path, and the high temperature group that is discharged from the lower side of the day bucket group 26 is absorbed when the water is circulated and the Papalite group is formed. The high temperature is given below the 26. ♦ When the ice layer is released, the laser irradiation 々 is controlled by the preset control content for the Peltier mold part 12 々. #13, the cutter wheel 14, the drive mechanism 16, the valve 23, the electricity The field emission detecting unit 12 and the cooling unit 13 are configured to emit the refrigerant, and the refrigerant is blown by the flow rate in the P sentence. The cutter wheel 14 is pressed against the substrate end by the pressure of 25 200918224.丨6 is the distance between the π 匕 匕 匕 δ and 疋. The valve 23 is supplied with a set amount of water. The set voltage is applied to the power supply... The support substrate 22 and the Peltier module of the fixed portion are also provided. The heat exchange mechanism 27 can adjust the position in the one-dimensional direction by the cut-off 7 + (shown in a straight line in FIG. 3) (not shown). [Operation of the device configuration 1] The operation of the crack forming device 1 will be described. The operation of 23 supplies water from the water supply mechanism 25 to form a water layer on the support substrate 22. Then, the substrate 50 to be processed is placed on the support substrate 22, and a voltage is applied from the power supply to remove the water layer into an ice layer. Thereby, the substrate to be affixed is fixed to the support substrate 22 to form an integral body. In this state, the synthetic substrate is treated as equivalent to the thick plate substrate. In this state, the cutter wheel 14 is actuated to form an initial crack TR at the substrate end of the substrate 50 to be processed. The laser irradiation unit 12 and the cooling unit 13 are continuously activated. And β 5 is entangled in the fractured substrate 5 〇 < cutting the predetermined line to move. 直 纴 i. Fruit ' As described above, the workpiece substrate 5 〇 produces a strong slit state, the shape: crack and cut. By switching the polarity of the power source 28, the ice layer is dissolved, and the substrate to be processed 50 and the support substrate 22 are separated. By the above operation, a cut surface having excellent end surface quality and excellent straightness is formed. [Device configuration 2: Next jj Figure 4 shows A schematic configuration of a crack forming apparatus according to another embodiment of the present invention. In the present embodiment, a glass substrate is fixed to a support substrate by using an adhesive. The present embodiment is characterized in that -n. ^, ', due to the support substrate 32 can also play δ again The conventional crack formation I zen does not need to be set in the conventional crack 2 = the function of the table of the broken substrate. Therefore, it is pushed to the level ==. This embodiment will be set from 35 ^ 彳 1 or The adhesive supply passage or the grain supply passage 36 in the inside of the stage is supplied with the second or the second, or the solvent or the solvent is transmitted through the stage or the sample supply port 5 or the solvent supply path 30 from the top of the carrier. The opening is provided to the support substrate 32 through the structure of the 诵?丨μ h 7 <Beton through holes 33, 34. f

The crack forming device 2 is mainly composed of a movable portion 11 that is subjected to laser irradiation or refrigerant blowing, and a fixed portion 31 that supports the substrate 50 to be processed. In addition, since the movable portion 11 is the same as that of FIG. 3, the same portion is omitted, and the description is omitted. The support plate 32 is supported by the state K in contact with the lower surface of the substrate to be supported, and is formed in the substrate 32. The hole 33, the carrier supply passage 35, the solvent supply passage %, the valve η, the adhesive storage container 39, and the solvent storage container 40 are configured. The support substrate 32 is a glass substrate of the same material as the substrate 5 to be processed. The thickness of the support substrate 32 is such that when the substrate is supported by the substrate % and the support substrate 32 and the laser light is irradiated, the internal compressive stress field can be formed and the thickness of the heat distribution and the stress distribution equivalent to the thick plate substrate can be formed as described above. The through hole 33 of the support substrate 32 is connected to the adhesive supply passage, and the adhesive is sent to the interface between the substrate to be processed % and the support substrate 32 by the opening and closing operation of the valve 37. Further, the through hole 34 is connected to the solvent supply path %, and the solvent is sent to the interface between the substrate to be processed % and the support substrate 32 by the opening and closing operation of the valve 38. 27 200918224 The laser irradiation unit 12, the cooling unit 13, the cutter wheel 14, the drive mechanism 16, the valve 叨, 38 are controlled by the control unit 30a' with predetermined control contents. In other words, the laser irradiation unit 12 and the cooling unit 13 are configured to illuminate the laser with the set rotation, and to blow the refrigerant at the set flow rate. The cutter wheel 14 presses the substrate end with a set pressing force. The drive mechanism 16 moves the set distance. The valve 37, 38 is supplied with a predetermined amount of an adhesive and a solvent.

Further, the support substrate 32 of the fixing portion 31 can be adjusted in a position in the two-dimensional direction by a stage (not shown in a straight line in Fig. 4) (not shown). The action of the crack forming device 2 will be described. First, the substrate to be processed 5 is placed on the support substrate 32. The valve 37 is actuated to supply an adhesive to the interface between the substrate to be processed and the support substrate 32. At this time, it is preferable to support the upper surface of the substrate to be processed 5G by a pressing member (not shown). Then wait for the substrates to be fixed to each other. When the substrate is fixed, the cutter wheel 14 is actuated to form an initial crack TR at the end of the sheet of the substrate to be processed. As described above, the laser irradiation unit 12 continues to be moved along the substrate to be processed 5G <cutting the predetermined line. As described above, the substrate 50 is produced: cracks and cuts. The knife state, after formation, causes the interface of the valve to supply solvent separation. After the operation of the substrate 5 and the support substrate 5, and waiting for the substrate to be processed 5, and supporting the plate 32, the surface quality is excellent, and the above operation is performed, and the glass substrate can be formed with an excellent straightness. Processing of the surface. [Device configuration 3: vacuum chuck] 28 200918224 Fig. 5 is a view showing a schematic configuration of a crack forming apparatus according to an embodiment of the present invention. In the present embodiment, the glass substrate is fixed to the branch substrate by the vacuum chuck. In the present embodiment, the support substrate 42 can also function as a table on which the substrate to be processed is placed in the white crack forming device. And it is necessary to use 6 on the stage of the conventional crack forming device. In the present embodiment, the flat plate-like suction of the vacuum device is placed on the stage (not shown in Fig. 5) which is held horizontally. Although the configuration of the crucible 46 and the support substrate 42 is a crack forming device including a porous table having a vacuum suction mechanism, the porous table having the vacuum suction mechanism may be a suction portion 46 of the vacuum device. The support plate 42 is fixed to the structure. The soil crack forming device 3 is mainly composed of a movable portion 11 for performing laser irradiation or refrigerant blowing, and a fixing portion 41 for supporting the substrate 50 to be processed. In addition, since the movable 4 11 is the same as that of FIG. 3 and FIG. 4, the same reference numerals will be given, and a part of the description will be omitted. The fixing portion 41 is sucked by the micropores of the support substrate 42 which are made of the support substrate 42 which is porous in the state of being in contact with the entire lower surface of the substrate to be processed, and which is fixed from the lower surface of the support substrate 42. The suction nozzle 43, the valve 44, and the vacuum pump 45 of the substrate 5 are processed. The floor substrate 42 is made of porous ceramics. The porous ceramics may be formed by fixing the substrate to be processed 5G and the support substrate 22 and irradiating the laser light to form an internal compressive stress field and to generate a heat distribution and a stress distribution equivalent to the above-described thick plate substrate. For example, when the substrate to be processed 5 is a glass substrate, the support substrate 42 can be used. The suction nozzle 43 is formed of a metal hollow container having a plurality of holes 29 200918224 formed on the surface in contact with the support substrate 42 and is connected to the vacuum pump 45 through the valve 44. The laser irradiation unit 12, the cooling unit 13, the cutter wheel 14, and the drive mechanism 16 are controlled by a predetermined control content by controlling (4) 3〇b. That is, the laser irradiation unit 12 and the cooling unit 13 irradiate the laser with the set output and blow the refrigerant at the set flow rate. The cutter wheel 14 presses the substrate end with the set pressing force. The drive mechanism 16 moves the set distance. Further, the support substrate 42 of the fixing portion 41 can be adjusted in a position in the two-dimensional direction by a stage (not shown). The action of the crack forming device 3 is explained. First, the substrate to be processed 5 is placed on the support substrate 42 to open the valve 44, and the substrate to be processed 50 is vacuum-adsorbed to the support substrate 42. After the substrate 50 to be processed is fixed to the support substrate 42, the cutter wheel 14 is actuated to form an initial crack tr at the substrate end of the substrate 50 to be processed. The laser irradiation unit 1 and the cooling unit 13 are continuously operated and moved along the planned cutting line set to the substrate 5 to be processed. As a result, as described above, the crack is formed and cut in a strong slit state in the substrate to be processed. Thereafter, the valve 44 is closed, and a permeate valve (not shown) is actuated to return the inside of the suction valve 43 to the atmospheric pressure state. By the above operation, it is possible to realize the processing of the cut surface of the glass substrate which is excellent in end surface quality and excellent in straightness. Further, the above-described crack forming device 1, the crack forming device 2, the laser irradiation portion 12 of the crack forming device 3, the cooling portion 3, and the cutter wheel 14 are provided to be fixed with respect to the substrate to be processed 5 and the supporting substrate. (22, 32, 42) Movement 'But the substrate to be processed 5 and the supporting substrate (22, 32, 42) 30 200918224 can be replaced with the laser irradiation unit 12, the cooling unit 13, and the cutter wheel 14 . The present invention is applied to a crack forming apparatus which is required to be processed with excellent end surface α quality and straightness when cutting a glass substrate or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the flow of a method of processing a brittle material substrate according to an embodiment of the present invention. Fig. 2 is a schematic view showing a state of stress when a substrate to be processed is fixed to a support substrate, irradiated with a laser, and cooled. Fig. 3 is a view showing a schematic configuration of a crack forming apparatus according to an embodiment of the present invention. Fig. 4 is a view showing a schematic configuration of a crack forming apparatus according to another embodiment of the present invention. Fig. 5 is a view showing a schematic configuration of a crack forming apparatus according to another embodiment of the present invention. Fig. 6 is a schematic view showing the stress distribution generated on the substrate when the thick substrate is irradiated with a laser and cooled to cause the crack to progress. Fig. 7 is a view showing the stress distribution in the cross section, the Β-Β, the cross section, the C-C, and the cross section in Fig. 6; Fig. 8 is a view showing the stress distribution generated on the substrate when the thin plate substrate is irradiated with a laser and cooled to cause the crack to progress. Fig. 9 is a view showing the stress distribution in the cross section, Ε-Ε, cross section, F-F, and cross section in D-D of Fig. 8. 31 200918224 [Description of main component symbols] 1 ' 2, 3 crack forming device 11 movable portion 12 laser irradiation portion 13 cooling portion 14 cutter wheel 15 rail 16 drive mechanism 21, 31, 41 fixing portion 22, 32, 42 support substrate 23 , 37 , 38 , 44 Valve 24 Water source 25 Water supply mechanism 26 Peltier module 27 Heat exchange mechanism 28 Power supply 29 Thermostatic bath 30, 30a, 30b Control unit 33, 34 Through-hole 35 Substance supply flow path 36 Solvent supply flow Road 39 Next agent storage container 40 Solvent storage container 32 200918224 43 Adsorption nozzle 45 Vacuum pump 46 Adsorption section

33

Claims (1)

200918224 X. Application for patents: 1. The processing method of the substrate to be processed is composed of the following steps: (about the planned cutting line of the back surface of the substrate to be processed which is composed of the brittle material and fixed on the surface of the substrate to be processed. a step of forming a crack at the end, or a step of fixing the support substrate on the back surface of the substrate to be processed by a brittle material having an initial crack formed at the end of the predetermined line on the surface; the soil V (b) - the side is made of thunder The light is irradiated from the initial crack along the line to the predetermined line (the laser beam is moved to the side of the substrate) to heat the portion to be irradiated to a temperature lower than the softening point of the substrate to be processed, and follows the laser irradiation. Cooling the heated portion so that heat generated by the laser irradiation is transmitted from the irradiated portion of the processed substrate to the back surface, and then transmitted from the back surface of the processed substrate to the support substrate, wherein the support substrate causes the processed substrate to be The two faces are convexly deformed along the predetermined line to be cut, and the crack from the surface of the substrate to be processed from the surface of the substrate to be processed is formed from the initial crack. And I (C) canceling the step of fixing the substrate to be processed and the support substrate as described above. 2. The processing method of claim i, wherein the substrate to be processed is a glass substrate, and the thickness thereof is 0.01 The above is less than 1 mm. 3. The processing method of the patent application scope is as follows: wherein the support substrate is a glass substrate. 4. The processing method according to the second application of the patent scope, the support substrate is a glass substrate. 200918224 5. The processing method of claim 1, wherein the substrate to be processed and the supporting substrate are the same material. 6. The processing method of the scope of the patent application, wherein the substrate to be processed and the supporting substrate are substantially A material having the same coefficient of linear expansion. 7. A processing method according to the scope of claim 2, wherein the substrate to be processed and the supporting substrate are materials having substantially the same thermal conductivity. 8. If the patent application range is from item to item 7, to In a processing method, in the step (4), the back surface of the substrate to be processed is fixed to the supporting substrate through the layer. The processing method according to any one of the items, wherein, in the step (4), the back surface of the substrate to be processed and the support substrate are fixed through the adhesive layer. 1〇, a crack forming device for a brittle material substrate, having laser light The illuminating mechanism, the cooling mechanism, and the snoring mechanism for moving the laser beam irradiation mechanism and the cooling mechanism with respect to the substrate to be processed, and moving the laser beam irradiation mechanism relative to the substrate to be processed to sweep the laser beam along the line to be cut of the substrate to be processed The first point is to heat the upper surface of the substrate to be processed at a temperature lower than the softening point, and then the relative mechanism moves relative to the path through which the spot passes to cool the substrate and form a crack along the line to be cut, which is characterized by: The supporting substrate of the substrate to be processed is fixed to the supporting substrate before the crack is formed, and the fixing means is released after the crack is formed; the magnetic laser substrate is in a state of fixing the substrate to be processed. The heat that reaches below the substrate that is irradiated on the substrate to be processed is transmitted from the lower surface of the substrate to be processed 35 200918224 by heat conduction. And the deformed upwardly convex generated in the material in the vicinity of the upper supporting substrate is formed of a line to cut. 11. The crack forming apparatus of claim 10, wherein the support substrate is formed of substantially the same material as the substrate to be processed. 12. The crack forming apparatus according to the first or second aspect of the patent application, wherein the loading and unloading means is a freezing clip which is formed by forming an ice layer on the interface between the supporting substrate and the substrate to be fixed, and dissolving the ice layer to release the fixing state. Head composition. 13. The crack forming device according to the third or second aspect of the patent application, wherein the 'loading and unloading means is an adhesive supply mechanism for supplying an adhesive to the interface between the support substrate and the substrate to be supported, and the support substrate and the support substrate. The interface between the processed substrates is supplied to a solvent supply mechanism that dissolves the solvent of the adhesive. 14. The crack forming apparatus according to the invention of claim 1, wherein the adhesive supply means and the solvent supply means supply the adhesive and the solvent to the surface of the support substrate from the through holes formed in the support substrate. A crack forming apparatus according to the ninth aspect of the invention, wherein the loading and unloading means is constituted by a vacuum chuck which can absorb the underside of the substrate to be processed through a plurality of small holes formed in the support substrate. XI. Schema: as the next page 36