TW200903636A - Plasma processing equipment and method for processing plasma - Google Patents
Plasma processing equipment and method for processing plasma Download PDFInfo
- Publication number
- TW200903636A TW200903636A TW97109928A TW97109928A TW200903636A TW 200903636 A TW200903636 A TW 200903636A TW 97109928 A TW97109928 A TW 97109928A TW 97109928 A TW97109928 A TW 97109928A TW 200903636 A TW200903636 A TW 200903636A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- plasma
- pressure
- gas introduction
- processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 24
- 230000002159 abnormal effect Effects 0.000 claims abstract description 17
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 386
- 238000003672 processing method Methods 0.000 claims description 26
- 238000009832 plasma treatment Methods 0.000 claims description 23
- 230000005284 excitation Effects 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000010616 electrical installation Methods 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 238000013022 venting Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 30
- 239000000919 ceramic Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 229910010293 ceramic material Inorganic materials 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000004575 stone Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007073770A JP2008235611A (ja) | 2007-03-21 | 2007-03-21 | プラズマ処理装置及びプラズマ処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200903636A true TW200903636A (en) | 2009-01-16 |
Family
ID=39765906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97109928A TW200903636A (en) | 2007-03-21 | 2008-03-20 | Plasma processing equipment and method for processing plasma |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008235611A (fr) |
| TW (1) | TW200903636A (fr) |
| WO (1) | WO2008114799A1 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2010058560A1 (ja) * | 2008-11-20 | 2012-04-19 | 株式会社エバテック | プラズマ処理装置 |
| JP5268626B2 (ja) * | 2008-12-26 | 2013-08-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP6061545B2 (ja) * | 2012-08-10 | 2017-01-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP6495875B2 (ja) * | 2016-09-12 | 2019-04-03 | 株式会社東芝 | 流路構造及び処理装置 |
| CN108103480A (zh) * | 2018-01-11 | 2018-06-01 | 宁波晶钻工业科技有限公司 | 一种化学气相沉积炉 |
| TWI826925B (zh) * | 2018-03-01 | 2023-12-21 | 美商應用材料股份有限公司 | 電漿源組件和氣體分配組件 |
| US12154764B2 (en) * | 2018-08-28 | 2024-11-26 | Fuji Corporation | Gas supply determination method and plasma generator |
| JP7682054B2 (ja) * | 2021-08-17 | 2025-05-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN114420526B (zh) * | 2022-01-18 | 2023-09-12 | 江苏天芯微半导体设备有限公司 | 一种衬套及晶圆预处理装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4727057B2 (ja) * | 2001-03-28 | 2011-07-20 | 忠弘 大見 | プラズマ処理装置 |
-
2007
- 2007-03-21 JP JP2007073770A patent/JP2008235611A/ja active Pending
-
2008
- 2008-03-18 WO PCT/JP2008/055014 patent/WO2008114799A1/fr not_active Ceased
- 2008-03-20 TW TW97109928A patent/TW200903636A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008235611A (ja) | 2008-10-02 |
| WO2008114799A1 (fr) | 2008-09-25 |
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