[go: up one dir, main page]

TW200903154A - Radiation sensitive resin composition, laminated insulating film, micro lens and preparation method thereof - Google Patents

Radiation sensitive resin composition, laminated insulating film, micro lens and preparation method thereof Download PDF

Info

Publication number
TW200903154A
TW200903154A TW097101656A TW97101656A TW200903154A TW 200903154 A TW200903154 A TW 200903154A TW 097101656 A TW097101656 A TW 097101656A TW 97101656 A TW97101656 A TW 97101656A TW 200903154 A TW200903154 A TW 200903154A
Authority
TW
Taiwan
Prior art keywords
decane
propoxydecane
group
methyl
weight
Prior art date
Application number
TW097101656A
Other languages
Chinese (zh)
Other versions
TWI425315B (en
Inventor
Masaaki Hanamura
Chihiro Uchiike
Koji Mitani
Takahiro Iijima
Kenichi Hamada
Katsuya Nagaya
Yuuki Oonuma
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007009145A external-priority patent/JP4849251B2/en
Priority claimed from JP2007051833A external-priority patent/JP4766268B2/en
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200903154A publication Critical patent/TW200903154A/en
Application granted granted Critical
Publication of TWI425315B publication Critical patent/TWI425315B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)

Abstract

To provide a radiation-sensitive resin composition having high radiation sensitivity, having such a development margin that even if developing time exceeds the optimum time in a development step, a good pattern profile can be formed, and capable of easily forming a patterned thin film excellent in adhesion. The radiation-sensitive resin composition includes [A] a copolymer of (a1) an unsaturated carboxylic acid and/or an unsaturated carboxylic acid anhydride, (a2) an unsaturated compound containing an epoxy group and/or an oxetanyl group and (a3) an unsaturated compound other than the components (a1) and (a2), [B] a 1,2-quinonediazide compound and [C] a siloxane oligomer containing a functional group which takes part in a crosslinking reaction with the component [A] under heat.

Description

200903154 九、發明說明 【發明所屬之技術領域] 本發明係有關敏輻射線性樹脂組成物、層間絕緣膜及 微透鏡及這些之製造方法。 【先前技術】 對於薄膜電晶體（以下稱爲「TFT」）型液晶顯示元 件或磁頭元件、積體電路元件、固體攝影元件等電子零件 ’ 一般爲了使層狀配置之配線間產生絕緣而設置層間絕緣 膜。形成層間絕緣膜之材料係以製得所需之圖案形狀之步 驟數較少’且具有充分平坦性者較佳，因此可廣泛使用敏 輻射線性樹脂組成物（參照日本特開2 0 0 1 - 3 5 4 8 2 2號公報 及曰本特開2 00 1 -3 43 743號公報）。 上述電子零件中，例如TFT型液晶顯示元件係經由在 上述層間絕緣膜上形成透明電極膜，再於其上形成液晶配 向膜之步驟來製造，因此，層間絕緣膜在形成透明電極膜 之步驟中處於高溫條件，或處於形成電極之圖案所使用之 光阻之剝離液中，因此對於這些情況必須具有充分之耐用 性。 近年，TFT型液晶顯示元件之趨勢爲大畫面化、高亮 度化、高精細化、高速應答化、薄型化等’這些所用之形 成層間絕緣膜用組成物必須爲高感度’形成之層間絕緣膜 之低介電率、高透過率等必須優於以往的高性能。 另外，傳真機、電子影印機、固體攝影元件等在晶片 -5- 200903154 上之彩色濾光片（on chip color filter)之成像光學體系或 光纖連結器之光學系材料使用具有3〜100μιη之透鏡直徑 之微透鏡’或這些微透鏡以規則性排列之微透鏡陣列。 形成微透鏡或微透鏡陣列時，形成與透鏡相當之光阻 圖案後，藉由加熱處理使之熔融流動，該狀態下作爲透鏡 使用的方法，或使熔融流動的透鏡圖案形成光罩，利用乾 蝕刻將透鏡形狀轉印至基底上的方法等爲人所知。形成前 述透鏡圖案時’廣泛使用敏輻射線性樹脂組成物（參照日 本特開平6-18702號公報及日本特開平6-136239號公報） 〇 但是形成如上述之微透鏡或微透鏡陣列之元件係被供 給其後爲了除去配線形成部份之接合墊上之各種絕緣膜， 而塗佈平坦化膜及蝕刻用光阻膜，使用所要之光罩進行曝 光、顯影去除接合墊部份之蝕刻光阻，接著藉由鈾刻去除 平坦化膜及各種絕緣膜’使接合墊部份露出的步驟。因此 微透鏡或微透鏡陣列在形成平坦化膜及蝕刻光阻塗膜之步 驟及蝕刻步驟中’必須爲耐溶劑性及耐熱性。 形成這種微透鏡用之敏輻射線性樹脂組成物必須爲高 感度，且由該組成物所形成之微透鏡具有所要之彎曲率半 徑，必須具有高耐熱性、高透過率等。 如上述製得之層間絕緣膜或微透鏡在形成這些之顯影 步驟中，顯影時間稍微超過最佳時間時，顯影液會滲透至 圖案與基板之間’容易產生剝離’因此，必須嚴控顯影時 間，有產品良率的問題。 -6 - 200903154 如此由敏輻射線性樹脂組成物形成層間絕緣膜或微透 鏡時’組成物被要求爲高感度，且在形成步驟之顯影步驟 中’顯影時間即使超過所設定之時間時，也不會產生圖案 剝離’顯示良好密著性，且該組成物所形成之層間絕緣膜 被要求高耐熱性、高耐溶劑性、低介電率、高透過率，形 成微透鏡時’要求微透鏡具有良好之熔融形狀（所要之彎 曲率半徑）’具有高耐熱性、高耐溶劑性、高透過率，但 是滿足這種要求之敏輻射線性樹脂組成物在以往仍未爲人 所知。 【發明內容】 〔發明之揭示〕 本發明係根據上述問題所完成者。因此本發明之目的 係提供具局輻射線感度’具有在顯影步驟中即使超過最佳 顯影時間也可形成良好的圖案形狀之顯影安全係數，且容 易形成密著性優異之圖案狀薄膜之敏輻射線性樹脂組成物 〇 本發明之另外的目的係提供用於形成層間絕緣膜時， 可形成筒耐熱性、高耐溶劑性、高透過率、低介電率之層 間絕緣膜’另外用於形成微透鏡時，可具有高透過率及良 好之熔融形狀之微透鏡之敏輻射線性樹脂組成物。 本發明之另外的目的係提供使用上述敏輻射線性樹脂 組成物形成層間絕緣膜及微透鏡的方法。 本發明之另外的目的係提供藉由本發明之方法所形成 200903154 之層間絕緣膜及微透鏡。 本發明之其他目的及優點係由下述說明可知。 依據本發明時’本發明之目的及優點係第1藉由一種 敏輻射線性樹脂組成物來達成。該組成物之特徵係含有： [A] ( a 1 )不飽和羧酸及/或不飽和羧酸酐、BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation sensitive linear resin composition, an interlayer insulating film, and a microlens, and a method of manufacturing the same. [Prior Art] An electronic component such as a thin film transistor (hereinafter referred to as "TFT") type liquid crystal display element, a magnetic head element, an integrated circuit element, or a solid-state imaging device is generally provided with interlayers in order to insulate between wirings arranged in a layered manner. Insulating film. It is preferable that the material for forming the interlayer insulating film has a small number of steps for producing a desired pattern shape and has sufficient flatness, so that a sensitive radiation linear resin composition can be widely used (refer to Japanese Patent Laid-Open No. 2000- 3 5 4 8 2 2 and 曰本特开 2 00 1 -3 43 743). In the above electronic component, for example, a TFT-type liquid crystal display device is manufactured by forming a transparent electrode film on the interlayer insulating film and forming a liquid crystal alignment film thereon, and therefore, the interlayer insulating film is in the step of forming a transparent electrode film. It is in a high temperature condition or in a stripping solution for the photoresist used to form the pattern of the electrodes, and therefore must have sufficient durability for these cases. In recent years, the trend of the TFT-type liquid crystal display device is to increase the brightness of the screen, to increase the brightness, to increase the definition, to increase the brightness, to increase the thickness, and to reduce the thickness of the TFT-type liquid crystal display device. The low dielectric constant, high transmittance, etc. must be superior to the high performance of the past. In addition, a facsimile machine, an electronic photocopier, a solid-state imaging device, or the like, an on-chip color filter imaging optical system or an optical connector material of a fiber-optic connector using a lens having a thickness of 3 to 100 μm on a wafer-5-200903154 A microlens of diameter 'or a microlens array of these microlenses arranged in a regular pattern. When a microlens or a microlens array is formed, a photoresist pattern corresponding to a lens is formed, and then melted and flowed by heat treatment. In this state, a lens is used as a lens, or a melted flowing lens pattern is formed into a mask. A method of etching and transferring a lens shape onto a substrate is known. In the case of forming the above-mentioned lens pattern, a wide range of sensitive radiation linear resin compositions are used (refer to Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. After that, in order to remove various insulating films on the bonding pads of the wiring forming portion, a planarizing film and an etching photoresist film are applied, and the desired photoresist is used for exposure and development to remove the etching resist of the bonding pad portion, and then The step of exposing the bonding pad portion by removing the planarizing film and various insulating films by uranium engraving. Therefore, the microlens or microlens array must be solvent resistant and heat resistant in the steps of forming the planarizing film and etching the photoresist coating film and the etching step. The sensitive radiation linear resin composition for forming such a microlens must have high sensitivity, and the microlens formed of the composition has a desired half of the bending rate, and must have high heat resistance, high transmittance, and the like. When the interlayer insulating film or the microlens prepared as described above develops in these development steps, when the development time slightly exceeds the optimum time, the developer penetrates between the pattern and the substrate to be easily peeled off. Therefore, the development time must be strictly controlled. There is a problem with product yield. -6 - 200903154 When the interlayer insulating film or microlens is formed from the sensitive radiation linear resin composition, the composition is required to have high sensitivity, and in the developing step of the forming step, the development time does not exceed the set time. Pattern peeling will occur, indicating good adhesion, and the interlayer insulating film formed by the composition is required to have high heat resistance, high solvent resistance, low dielectric constant, high transmittance, and when the microlens is formed, the microlens is required to have A good molten shape (required bending radius) has high heat resistance, high solvent resistance, and high transmittance, but a sensitive radiation linear resin composition that satisfies such requirements has not been known in the past. [Disclosure of the Invention] [Disclosure of the Invention] The present invention has been completed in accordance with the above problems. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a radiation sensitivity which has a development safety factor which can form a good pattern shape even if an optimum development time is exceeded in a development step, and which is easy to form a sensitive film of a pattern-like film excellent in adhesion. Linear Resin Composition 〇 Another object of the present invention is to provide an interlayer insulating film which can form a heat resistance, a high solvent resistance, a high transmittance, and a low dielectric property for forming an interlayer insulating film. In the case of a lens, it is possible to have a sensitive radiation linear resin composition of a microlens having a high transmittance and a good melt shape. Another object of the present invention is to provide a method of forming an interlayer insulating film and a microlens using the above-described radiation sensitive linear resin composition. A further object of the present invention is to provide an interlayer insulating film and a microlens formed by the method of the present invention of 200903154. Other objects and advantages of the present invention will be apparent from the description. According to the present invention, the objects and advantages of the present invention are attained by a sensitive radiation linear resin composition. The composition is characterized by: [A] ( a 1 ) an unsaturated carboxylic acid and/or an unsaturated carboxylic anhydride,

Ca2)含有環氧基及/或氧環丁基之不飽和化合物， 及 (a3)選自甲基丙烯酸烷酯、丙烯酸烷酯、甲基丙烯 酸環狀烷酯、具有羥基之甲基丙烯酸酯、丙烯酸環狀烷酯 、甲基丙烯酸芳酯、丙烯酸芳酯、不飽和二羧酸二酯、雙 環不飽和化合物、馬來醯亞胺化合物、不飽和芳香族化合 物、共軛二烯、四氫呋喃骨架、呋喃骨架、四氫吡喃骨架 、吡喃骨架或具有下述式（3)表示之骨架之不飽和化合 物及下述式（I )表示之含酚性羥基之不飽和化合物所成 群，與（al)成分及（a2)成分不同之至少1種之其他不 飽和化合物的共聚物Ca2) an unsaturated compound containing an epoxy group and/or an oxocyclobutyl group, and (a3) selected from the group consisting of alkyl methacrylate, alkyl acrylate, cyclic alkyl methacrylate, methacrylate having a hydroxyl group, a cyclic alkyl acrylate, an aryl methacrylate, an aryl acrylate, an unsaturated dicarboxylic acid diester, a bicyclic unsaturated compound, a maleimide compound, an unsaturated aromatic compound, a conjugated diene, a tetrahydrofuran skeleton, a furan skeleton, a tetrahydropyran skeleton, a pyran skeleton or an unsaturated compound having a skeleton represented by the following formula (3) and a phenolic hydroxyl group-containing unsaturated compound represented by the following formula (I); Al) a copolymer of at least one other unsaturated compound having a different composition than (a2)

(式（3)中，R7係氫原子或甲基，η係1以上的整數） ch2=c>(In the formula (3), R7 is a hydrogen atom or a methyl group, and η is an integer of 1 or more) ch2=c>

-8- • · · (I) 200903154 其中R1係氫原子或碳數1〜4之烷基，R2〜R6係可相 同或不同、氫原子、翔基或碳數1〜4之烷基，β係表示 單鍵、-COO-、或-CONH· ’ m係〇〜3的整數，但是r2〜 R6之至少一個爲羥基， [B]l，2-醌二疊氮化合物，及 含有與[A]成分藉由熱產生交聯反應之官能基的砂氧 烷低聚物。 # # B月；^ g白勺S ί憂點係第2藉由一種層間絶緣膜或微 透鏡之形成方法來達成。其特徵係含有以下記載順序之以 下步驟， (i )基板上形成申請專利範圍第1項之敏輻射線性 樹脂組成物之塗膜的步驟、 (2 )對該塗膜之至少一部份照射輻射線的步驟、 (3 )顯影步驟及 (4 )加熱步驟。 本發明之目的及優點係第3藉由上述方法形成之層間 絶緣膜或微透鏡來達成。 實施發明之最佳形態 以下詳述本發明之敏輻射線性樹脂組成物。 共聚物[A] 共聚物[A ]係將化合物（a丨）、化合物（a 2 )及化合 200903154 物（a3)在溶劑中，聚合引發劑之存在下，藉由自由基聚 合來製造。本發明所用之共聚物[A]係將化合物（al )所 衍生之構成單元，於化合物（al ) 、（ a2 )及（a3 )所衍 生之重複單位之合計下，較佳爲含有5〜40重量％ ’特佳 爲5〜2 5重量％。使用此構成單元未達5重量％之共聚物 時，在顯影步驟時難以溶解於鹼水溶液中，而超過40重 量％之共聚物有對於鹼水溶液之溶解性過高的傾向。 化合物（a 1 )係具有自由基聚合性之不飽和羧酸及/ 或不飽和羧酸酐，例如有單羧酸、二羧酸、二羧酸酐、多 元羧酸之單〔（甲基）丙烯醯氧基烷基〕酯、在兩末端具 有羧基與羥基之聚合物之單（甲基）丙烯酸酯、具有羧基 之多環化合物及其酐等。 這些之具體例，單羧酸例如有丙烯酸、甲基丙烯酸、 巴豆酸等； 二羧酸例如有順丁烯二酸、反式丁烯二酸、檸康酸、 中康酸、衣康酸等： 二羧酸之酐例如有上述二羧酸例示之化合物之酐等； 多兀竣酸之單〔（甲基）丙烯醯氧基烷基〕酯例如有 號拍酸單〔2-(甲基）丙烯醯氧基乙基〕酯、苯二甲酸單 〔2-(甲基）丙烯醯氧基乙基〕酯等； 在兩末端具有羧基與羥基之聚合物之單（甲基）丙稀 酸酉曰例如有ω -殘基聚己內酯單（甲基）丙烯酸酯等； 具有羧基之多環化合物及其酐’例如有％羧基雙環 [2.2.1]庚-2-烯、5,6-二羧基雙環[2·2庚烯、5_羧基_ -10- 200903154 5-甲基雙環[2.2.1]-庚-2-烯、5-羧基-5-乙基雙環[2.2.1]庚_ 2-烯、5-羧基-6_甲基雙環[2·21]•庚-2_烯、5_羧基-6_乙基 雙環[2.2_1]庚_2_烯、56_二羧基雙環[221]_庚_2_烯酐等 〇 這些中’在共聚反應性、對於鹼水溶液之溶解性及取 得容易性的觀點，較佳爲使用單羧酸、二羧酸之酐，尤其 是丙烯酸、甲基丙烯酸、順丁烯二酸酐。這些可單獨或者 組合使用。 本發明所用之共聚物[Α]係將化合物（a2 )所衍生之 構成單兀’根據化合物（al) 、（a2)及（a3)所衍生之 重覆單元合計，較佳爲含有10〜80重量％，特佳爲30〜 80重量％。此構成單元未達丨〇重量％時，所得之層間絶緣 膜或微透鏡之耐熱性或表面硬度會有降低的傾向，若此構 成單元之含量超過8 0重量％時，敏輻射線性樹脂組成物之 保存安定性會有降低的傾向。 化合物（a2 )係具有自由基聚合性之含環氧基及/或 氧環丁基之不飽和化合物，其中含環氧基之不飽和化合物 ，例如有丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯、α-乙基丙烯酸縮水甘油酯、α-正丙基丙烯酸縮水甘油酯、α-正丁基丙烯酸縮水甘油酯、丙烯酸-3，4-環氧丁酯、甲基丙 烯酸-3,4-環氧丁酯、丙烯酸-6,7-環氧庚酯、甲基丙烯酸-6,7-環氧庚酯、α-乙基丙烯酸-6,7-環氧庚酯、〇-乙烯基苄 基縮水甘油醚、m-乙烯基苄基縮水甘油醚、ρ-乙烯基苄基 縮水甘油醚等。這些中，在共聚反應性、及提高所得之層 -11 - 200903154 間絶緣膜或微透鏡之耐熱性、表面硬度的觀點，較佳爲以 甲基丙烯酸縮水甘油酯，甲基丙烯酸-6,7-環氧庚酯’ 〇-乙 烯基苄基縮水甘油醚，m -乙烯基苄基縮水甘油醚，p -乙烯 基苄基縮水甘油醚、3,4-環氧基環己基甲基丙烯酸酯等。 含有氧環丁基之不飽和化合物，例如有3_(丙烯醯氧基甲 基）氧環丁烷、3-(丙烯醯氧基甲基）-2 -甲基氧環丁烷、 3-(丙烯醯氧基甲基）-3-乙基氧環丁烷、3-(丙烯醯氧基 甲基）-2-三氟甲基氧環丁烷、3-(丙烯醯氧基甲基）-2-五氟乙基氧環丁烷、3-(丙烯醯氧基甲基）-2 -苯基氧環丁 烷、3-(丙烯醯氧基甲基）-2,2 -二氟氧環丁烷、3-(丙烯 醯氧基甲基）-2,2,4-三氟氧環丁烷、3-(丙烯醯氧基甲基 )·2,2,4,4 -四氟氧環丁烷、3-(2 -丙烯醯氧基乙基）氧環 丁烷、3-(2-丙烯醯氧基乙基）-2-乙基氧環丁烷、3_(2_ 丙烯醯氧基乙基）-3 -乙基氧環丁烷、3- (2 -丙烯醯氧基乙 基）-2-三氟甲基氧環丁烷、3-(2-丙烯醯氧基乙基）-2_ 五氟乙基氧環丁烷、3- (2 -丙烯醯氧基乙基）-2 -苯基氧環 丁烷、3- (2-丙烯醯氧基乙基）-2,2-二氟氧環丁烷、3-( 2 -丙烯醯氧基乙基）·2,2,4 -三氟氧環丁院、3- (2 -丙嫌醋 氧基乙基）-2,2,4,4_四氟氧環丁烷等之丙烯酸酯；3-(甲 基丙烯醯氧基甲基）氧環丁烷、3-(甲基丙烯醯氧基甲基 )-2 -甲基氧環丁烷、3-(甲基丙烯醯氧基甲基）-3-乙基 氧環丁烷、3-(甲基丙烯醯氧基甲基）_2·三氟甲基氧環丁 烷、3-(甲基丙烯醯氧基甲基）-2-五氟乙基氧環丁烷、3_ (甲基丙烯醯氧基甲基）-2 -苯基氧環丁烷、3-(甲基丙烯 -12- 200903154 醯氧基甲基）-2,2-二氟氧環丁烷、3-(甲基丙烯醯氧基甲 基）-2,2,4 -二氣氧ϊ哀丁垸、3-(甲基丙烧醒氧基甲基）_ 2，2,4,4-四氟氧環丁烷、3- (2-甲基丙烯醯氧基乙基）氧環 丁烷、3- (2_甲基丙烯醯氧基乙基）-2-乙基氧環丁烷、3-(2 -甲基丙嫌酷氧基乙基）-3 -乙基氧環丁院、3- (2 -甲基 丙烯醯氧基乙基）_2·三氟甲基氧環丁烷、3-(2-甲基丙烯 醯氧基乙基）-2 -五氟乙基氧環丁烷、3- (2 -甲基丙烯醯氧 基乙基）·2-苯基氧環丁烷、3- (2 -甲基丙烯醯氧基乙基 )-2,2-二氟氧環丁烷、3- (2 -甲基丙烯醯氧基乙基）· 2，2,4 -三氟氧環丁烷、3- (2 -甲基丙烯醯氧基乙基）_ 2，2,4，4-四氟氧環丁烷等之甲基丙烯酸酯等。這些化合物 (a2 )可單獨或組合二種以上來使用。 化合物（a3 )係與化合物（a 1 ) 、 （ a2 )不同之具有 自由基聚合性之之不飽和化合物。化合物（a3 )係甲基丙 烯酸烷酯、丙烯酸烷酯、甲基丙烯酸環狀烷酯、具有羥基 之甲基丙烯酸酯、丙烯酸環狀烷酯、甲基丙烯酸芳酯、丙 烯酸芳酯、不飽和二羧酸二酯、雙環不飽和化合物、馬來 醯亞胺化合物、不飽和芳香族化合物、共軛二烯、四氫呋 喃骨架、呋喃骨架、四氫吡喃骨架、吡喃骨架或具有下述 式（3)表示之骨架之不飽和化合物或下述式（I)表示 之含酚性羥基之不飽和化合物。-8 2009 03 2009 2009 2009 Is a single bond, -COO-, or -CONH· 'm system 〇~3 integer, but at least one of r2~R6 is a hydroxyl group, [B]l,2-quinonediazide compound, and contains and [A A component of a methane oxide oligomer which generates a functional group of a crosslinking reaction by heat. # # B月; ^ g S ί 点 points are achieved by an interlayer insulating film or microlens formation method. The feature is the following steps of the following sequence, (i) a step of forming a coating film of the radiation sensitive linear resin composition of claim 1 on the substrate, and (2) irradiating at least a portion of the coating film with radiation. a step of a line, (3) a developing step, and (4) a heating step. The object and advantage of the present invention are attained by the third interlayer insulating film or microlens formed by the above method. BEST MODE FOR CARRYING OUT THE INVENTION The sensitive radiation linear resin composition of the present invention will be described in detail below. Copolymer [A] The copolymer [A] is produced by radical polymerization in the presence of a polymerization initiator in the presence of a compound (a), a compound (a 2 ) and a compound (a3) in a solvent. The copolymer [A] used in the present invention is a constituent unit derived from the compound (al), preferably 5 to 40 in terms of the total of the repeating units derived from the compounds (al), (a2) and (a3). % by weight 'extra good is 5 to 25% by weight. When the copolymer having less than 5% by weight of the constituent unit is used, it is difficult to dissolve in the aqueous alkali solution during the development step, and the copolymer having more than 40% by weight tends to have too high solubility in the aqueous alkali solution. The compound (a 1 ) is a radically polymerizable unsaturated carboxylic acid and/or an unsaturated carboxylic anhydride, for example, a monocarboxylic acid, a dicarboxylic acid, a dicarboxylic anhydride, or a polycarboxylic acid mono [(meth) propylene oxime] An oxyalkyl]ester, a mono(meth)acrylate having a polymer having a carboxyl group and a hydroxyl group at both terminals, a polycyclic compound having a carboxyl group, an anhydride thereof, and the like. Specific examples of such a monocarboxylic acid include acrylic acid, methacrylic acid, crotonic acid, etc.; and dicarboxylic acids such as maleic acid, trans-butenedioic acid, citraconic acid, mesaconic acid, itaconic acid, etc. The anhydride of the dicarboxylic acid is, for example, an anhydride of the compound exemplified above as the dicarboxylic acid; and the mono((meth)acryloxyalkylalkyl) ester of polydecanoic acid, for example, has a single acid [2-(methyl) a propylene oxyethyl ester, phthalic acid mono [2-(methyl) propylene methoxyethyl] ester, etc.; a mono(meth)acrylic acid having a polymer of a carboxyl group and a hydroxyl group at both terminals For example, there are ω-residue polycaprolactone mono(meth)acrylate, etc.; a polycyclic compound having a carboxyl group and an anhydride thereof, for example, % carboxybicyclo[2.2.1]hept-2-ene, 5,6 -Dicarboxybicyclo[2·2heptene, 5-carboxyl_-10-200903154 5-methylbicyclo[2.2.1]-hept-2-ene, 5-carboxy-5-ethylbicyclo[2.2.1] Hept-2-ene, 5-carboxy-6-methylbicyclo[2·21]•hept-2-ene, 5-carboxy-6-ethylbicyclo[2.2_1]hept-2-ene, 56-dicarboxyl Bicyclo[221]_heptan-2-ene anhydride, etc. These are in the copolymerization reactivity, dissolution in aqueous alkali solution From the standpoint of solvability and ease of use, it is preferred to use an anhydride of a monocarboxylic acid or a dicarboxylic acid, especially acrylic acid, methacrylic acid or maleic anhydride. These can be used singly or in combination. The copolymer [Α] used in the present invention is a composite unit derived from the compound (a2), (a2) and (a3), and preferably contains 10 to 80. % by weight, particularly preferably 30 to 80% by weight. When the constituent unit is less than 5% by weight, the heat resistance or surface hardness of the resulting interlayer insulating film or microlens tends to decrease. If the content of the constituent unit exceeds 80% by weight, the radiation sensitive linear resin composition The preservation stability will tend to decrease. The compound (a2) is a radically polymerizable epoxy group-containing and/or oxocyclobutyl group-containing unsaturated compound, and an epoxy group-containing unsaturated compound such as glycidyl acrylate or glycidyl methacrylate , α-ethyl glycidyl acrylate, glycidyl α-n-propyl acrylate, glycidyl α-n-butyl acrylate, 3,4-epoxybutyl acrylate, 3,4-cyclomethacrylate Oxybutyl butyl ester, acrylate-6,7-epoxyheptyl ester, -6,7-epoxyheptyl methacrylate, α-ethyl acrylate-6,7-epoxyheptyl ester, 〇-vinylbenzyl shrinkage Glycerol ether, m-vinylbenzyl glycidyl ether, ρ-vinylbenzyl glycidyl ether, and the like. Among these, from the viewpoints of copolymerization reactivity and improvement of heat resistance and surface hardness of the insulating film or microlens between the obtained layers -11 - 200903154, glycidyl methacrylate, methacrylic acid-6, 7 is preferable. -epoxyheptyl ester' 〇-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, 3,4-epoxycyclohexyl methacrylate, etc. . An unsaturated compound containing an oxocyclobutyl group, for example, 3-(propyleneoxymethyl)oxycyclobutane, 3-(acryloxymethyl)-2-methylcyclobutane, 3-(propylene醯oxymethyl)-3-ethyloxycyclobutane, 3-(acryloxymethyl)-2-trifluoromethylcyclobutane, 3-(acryloxymethyl)-2 - pentafluoroethyloxycyclobutane, 3-(acryloxymethyl)-2-phenyloxycyclobutane, 3-(acryloxymethyl)-2,2-difluorooxetane Alkane, 3-(acryloxymethyl)-2,2,4-trifluorooxocyclobutane, 3-(acryloxymethyl)-2,2,4,4-tetrafluorooxane Alkanes, 3-(2-propenyloxyethyl)oxycyclobutane, 3-(2-propenyloxyethyl)-2-ethyloxycyclobutane, 3-(2-propylene oxyethyloxy) -3 -ethyloxycyclobutane, 3-(2-propenyloxyethyl)-2-trifluoromethyloxycyclobutane, 3-(2-propenyloxyethyl)-2_ Fluoroethyloxycyclobutane, 3-(2-propenyloxyethyl)-2-phenyloxycyclobutane, 3-(2-propenyloxyethyl)-2,2-difluoroox Cyclobutane, 3-(2-propenyloxyethyl)·2,2,4-trifluorooxetane, 3-(2-propyl vinegar Acrylates such as oxyethyl)-2,2,4,4-tetrafluorooxocyclobutane; 3-(methacryloxymethyl)oxycyclobutane, 3-(methacryloxy) Methyl)-2-methyloxetane, 3-(methacryloxymethyl)-3-ethyloxycyclobutane, 3-(methacryloxymethyl)_2 Trifluoromethyloxetane, 3-(methacryloxymethyl)-2-pentafluoroethyloxycyclobutane, 3-(methacryloxymethyl)-2-phenyloxy Cyclobutane, 3-(methacryl-12-200903154 decyloxymethyl)-2,2-difluorooxocyclobutane, 3-(methacryloxymethyl)-2,2,4 - Dioxin, sedative, 3-(methylpropenyloxymethyl)_ 2,2,4,4-tetrafluorooxocyclobutane, 3-(2-methylpropenyloxy) Oxycyclobutane, 3-(2-methacryloxyethyl)-2-ethyloxocyclobutane, 3-(2-methylpropanoethyloxy)-3-B Oxycyclohexane, 3-(2-methylpropenyloxyethyl)_2·trifluoromethyloxetane, 3-(2-methylpropenyloxyethyl)-2-pentafluoro Ethyloxycyclobutane, 3-(2-methylpropenyloxyethyl)-2-phenyloxycyclobutane, 3-(2- Methyl propylene methoxyethyl)-2,2-difluorooxycyclobutane, 3-(2-methylpropenyloxyethyl). 2,2,4-trifluorooxocyclobutane, 3 - (2-Methyl propylene oxyethyl) methacrylate such as 2,2,4,4-tetrafluorooxocyclobutane or the like. These compounds (a2) can be used singly or in combination of two or more. The compound (a3) is an unsaturated compound having a radical polymerizable property different from the compounds (a 1 ) and ( a2 ). The compound (a3) is an alkyl methacrylate, an alkyl acrylate, a cyclic alkyl methacrylate, a methacrylate having a hydroxyl group, a cyclic alkyl acrylate, an aryl methacrylate, an aryl acrylate, an unsaturated second. a carboxylic acid diester, a bicyclic unsaturated compound, a maleimide compound, an unsaturated aromatic compound, a conjugated diene, a tetrahydrofuran skeleton, a furan skeleton, a tetrahydropyran skeleton, a pyran skeleton or have the following formula (3) An unsaturated compound having a skeleton or a phenolic hydroxyl group-containing unsaturated compound represented by the following formula (I).

CH， -13- 200903154 (式（3)中，R7係氫原子或甲基’ η係1以上的整數）CH, -13- 200903154 (In the formula (3), the R7 hydrogen atom or the methyl group η is an integer of 1 or more)

其中R1係氫原子或碳數1〜4之烷基，R2〜R6係可相 同或不同、氫原子、羥基或碳數1〜4之烷基，Β係表示 單鍵、-COO-、或-CONH-，m係〇〜3的整數，但是R2〜 R6之至少一個爲羥基。 這些具體例，其中甲基丙烯酸烷酯例如甲基丙烯酸甲 酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基丙烯酸第 二丁酯、甲基丙烯酸第三丁酯、2 -乙基己基甲基丙烯酸酯 '異癸基甲基丙烯酸酯、正月桂基甲基丙烯酸酯、十三烷 基甲基丙烯酸酯、正十八烷基甲基丙烯酸酯等； 丙烯酸烷酯例如甲基丙烯酸酯、丙烯酸異丙醋等； 甲基丙烯酸環狀烷酯例如環己基甲基丙烯酸酯、2 -甲 基環己基甲基丙嫌酸酯、三環[5.2.1.〇2.6]癸院基甲基丙 嫌酸酯、三環[5.2.1. 02.6]癸烷-8-基氧乙基甲基丙烯酸酯、 異冰片基甲基丙烯酸酯等； 具有羥基之甲基丙烯酸酯例如有羥甲基甲基丙烯酸酯 、2-羥乙基丙烯酸酯、3_羥丙基甲基丙烯酸酯、4_羥丁基 甲基丙烯酸酯 '二甘醇單甲基丙烯酸酯、2,3-二羥丙基甲 基丙烯酸酯、2-甲基丙烯氧基乙基糖苷、4_羥苯基甲基丙 -14- 工 200903154 烯酸酯等； 丙烯酸環狀烷酯例如環己基丙烯酸酯、2 -甲基環己基 丙稀酸酯、三環[5·2·1·〇2·6]癸院-8-基丙稀酸醋、三環 [5.2.1.02.6]癸院-8 -基氧乙基丙烯酸酯、異冰片基丙烯酸酯 等； 甲基丙烯酸芳酯例如苯基甲基丙烯酸酯、苄基甲基丙 烯酸酯等； 丙烯酸芳酯例如苯基丙烯酸酯、苄基丙烯酸酯等； 不飽和二羧酸二酯例如馬來酸二乙酯、富馬酸二乙酯 、衣康酸二乙酯等； 雙環不飽和化合物例如雙環[2.2.1]庚-2-烯、5 _甲基雙 環[2.2.1]庚-2-烯、5-乙基雙環[2.2.1]庚-2-烯、5-甲氧基雙 環[2.2.1]庚-2-嫌、5 -乙氧基雙環[2.2.1]庚-2-稀、5,6-二甲 氧基雙環[2.2.1]庚-2-細、5,6 - 一乙氧基雙環[2.2.1]庚-2-稀 、5-第三丁氧基羰基雙環[2.2.1]庚-2-烯、5-環己氧基羰基 雙環[2.2_1]庚-2-稀、5 -苯氧基羯基雙環[2_2.1]庚-2-嫌、 5,6-二（第三丁氧基羰基）雙環[2.2.1]庚-2-烯、5，6-二（ 環己氧基簾基）雙環[2.2.1]庚-2 -烯、5- (2，-羥乙基）雙 環[2.2.1]庚-2-烧、5,6-二經基雙環[2.2.1]庚-2-燃、5,6 -二 (羥甲基）雙環[2.2.1]庚-2-烯、5,6-二（2，-羥甲基）雙環 [2.2.1] 庚-2-烯、5 -羥基-5-甲基雙環[2.2.1]庚-2-烯、5 -羥 基-5·乙基雙環[2.2.1]庚-2 -儲、5-經甲基-5-甲基雙環 [2.2.1] 庚-2-烯等； 馬來醯亞胺化合物例如Ν -苯基馬來醯亞胺、Ν -環己 -15 - 200903154 基馬來醯亞胺、N -苄基馬來醯亞胺、N- (4 -羥苯基、 J馬來 醯亞胺、N- ( 4-羥基苄基）馬來醯亞胺、N_琥珀 基-3-馬來醯亞胺苯甲酸酯、N-琥珀醯亞胺基-4-禹也& 胺丁酸酯、Ν-琥珀醯亞胺基-6-馬來醯亞胺己酸酯、χ I琥 珀醯亞胺基-3-馬來醯亞胺丙酸酯、Ν- ( 9-吖啶基）良卞 馬來醯 亞胺等； 不飽和芳香族化合物例如苯乙烯、α-甲基苯乙#、 間-甲基苯乙烯、對-甲基苯乙烯、乙烯基甲苯、對-甲氧基 苯乙烯等；共軛二烯例如有1，3-丁二烯、異戊烯、2,3_二 甲基-1,3-丁二烯等； 具有四氫呋喃骨架之不飽和化合物例如有四氫糠基（ 甲基）丙烯酸酯、2-甲基丙醯氧基-丙酸四氫糠酯、3-(甲 基）丙醯氧基四氫呋喃-2-酮等； 具有呋喃骨架之不飽和化合物例如有2 -甲基-5 - ( 3 -呋喃基）-1-戊烯-3-酮、糠基（甲基）丙烯酸酯、1-呋喃-2 -丁基-3 -燒-2 -嗣、1-咲喃-2 -丁基-3-甲氧基-3 -嫌-2 -醒、 6- (2 -呋喃基）-2 -甲基-1-己烯-3-酮、6-呋喃-2-基-己-1-烯-3-酮、丙烯酸2-呋喃-2-基-1-甲基-乙酯、6- (2-呋喃基 )-6 -甲基-1-庚;(:希-3-嗣等； 具有四氫吡喃骨架之不飽和化合物’例如有（四氫吡 喃-2 -基）甲基丙烯酸甲酯、2,6 -二甲基- 8-(四氫吡喃- 2-基氧基）-辛-1 -烯-3 -酮、2 -甲基丙烯酸四氫吡喃-2 -基酯、 1-(四氫吡喃-2-氧）-丁基-3-烯-2-酮等； 具有吡喃骨架之不飽和化合物例如有4 - ( 1，4 _二氧雜_ -16- 200903154 5-氧代-6-庚烯基）-6-甲基-2-吡喃酮、4- ( 1,5-二氧雜- 6- 氧代-7-羊稀基）-6 -甲基- 2- U比喃嗣寺； 含有上述式（3)表示之骨架之不飽和化合物例如有 聚乙二醇（n = 2〜1 0 )單（甲基）丙烯酸酯、聚丙二醇（ n = 2〜10)單（甲基）丙烯酸酯等； 含有酚骨架之不飽和化合物例如由上述式（I )表示 之化合物，以B與m之定義，並以下述式（4)〜（8) 表示之化合物等； R1Wherein R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R2 to R6 are the same or different, a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 4 carbon atoms, and the lanthanoid group represents a single bond, -COO-, or - CONH-,m is an integer of 〇3, but at least one of R2 to R6 is a hydroxyl group. These specific examples are those in which alkyl methacrylate such as methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, second butyl methacrylate, third butyl methacrylate, 2-ethyl group Hexyl methacrylate 'isodecyl methacrylate, n-lauryl methacrylate, tridecyl methacrylate, n-octadecyl methacrylate, etc.; alkyl acrylate such as methacrylate , acrylic acid isopropyl vinegar, etc.; methacrylic acid cyclic alkyl esters such as cyclohexyl methacrylate, 2-methylcyclohexylmethyl propyl acrylate, tricyclo [5.2.1. 〇 2.6] 癸 基 methyl Acrylic acid ester, tricyclo[5.2.1. 02.6]decane-8-yloxyethyl methacrylate, isobornyl methacrylate, etc.; methacrylate having a hydroxyl group such as hydroxymethyl group Acrylate, 2-hydroxyethyl acrylate, 3-hydroxypropyl methacrylate, 4-hydroxybutyl methacrylate 'diethylene glycol monomethacrylate, 2,3-dihydroxypropyl methacrylate Ester, 2-methacryloxyethyl glycoside, 4-hydroxyphenylmethylpropane-14-工200903154 enoate A cyclic alkyl acrylate such as cyclohexyl acrylate, 2-methylcyclohexyl acrylate, tricyclo [5·2·1·〇2·6] 癸院-8-yl acrylate vinegar, tricyclic [5.2.1.02.6] 癸院-8-yloxyethyl acrylate, isobornyl acrylate, etc.; aryl methacrylate such as phenyl methacrylate, benzyl methacrylate, etc.; aryl acrylate For example, phenyl acrylate, benzyl acrylate, etc.; unsaturated dicarboxylic acid diester such as diethyl maleate, diethyl fumarate, diethyl itaconate, etc.; bicyclic unsaturated compounds such as bicyclo [2.2 .1]hept-2-ene, 5-methylbicyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[2.2.1]hept-2-ene, 5-methoxybicyclo[2.2. 1] Geng-2-supplement, 5-ethoxybicyclo[2.2.1]hept-2-diene, 5,6-dimethoxybicyclo[2.2.1]hept-2-fine, 5,6- Ethoxybicyclo[2.2.1]hept-2-diene, 5-t-butoxycarbonylbicyclo[2.2.1]hept-2-ene, 5-cyclohexyloxycarbonylbicyclo[2.2_1]hept-2 - dilute, 5-phenoxyindenylbicyclo[2_2.1]hept-2-pyrene, 5,6-di(t-butoxycarbonyl)bicyclo[2.2.1]hept-2-ene, 5,6 - bis(cyclohexyloxy)bicyclic [2.2.1]hept-2-ene, 5-(2,-hydroxyethyl)bicyclo[2.2.1]hept-2-pyrrol, 5,6-di-diylbicyclo[2.2.1]hept-2- Combustion, 5,6-bis(hydroxymethyl)bicyclo[2.2.1]hept-2-ene, 5,6-bis(2,-hydroxymethyl)bicyclo[2.2.1]hept-2-ene, 5 -hydroxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-hydroxy-5.ethylbicyclo[2.2.1]heptane-2-storage, 5-methyl-5-methylbicyclo [2.2.1] Hept-2-ene and the like; Maleimide compounds such as Ν-phenylmaleimide, Ν-cyclohexene-15 - 200903154 carbamazepine, N-benzylmaline Yttrium, N-(4-hydroxyphenyl, J-maleimide, N-(4-hydroxybenzyl)maleimide, N-succinyl-3-maleimidobenzoic acid Ester, N-amber succinimide-4-indole & amine butyrate, oxime-succinimide-6-maleimide caproate, oxime I amber quinone imine-3- Maleic acid imide propionate, Ν-(9-acridinyl), fluorene maleimide, etc.; unsaturated aromatic compounds such as styrene, α-methylphenylethyl #, m-methylstyrene , p-methylstyrene, vinyl toluene, p-methoxystyrene, etc.; conjugated diene such as 1,3-butadiene , isoamylene, 2,3-dimethyl-1,3-butadiene, etc.; unsaturated compounds having a tetrahydrofuran skeleton such as tetrahydroindenyl (meth) acrylate, 2-methylpropoxy group - tetrahydrofurfuryl propionate, 3-(methyl)propenyloxytetrahydrofuran-2-one, etc.; an unsaturated compound having a furan skeleton, for example, 2-methyl-5-(3-furyl)-1- Penten-3-one, mercapto (meth) acrylate, 1-furan-2-butyl-3-pyridin-2-indole, 1-nonan-2-butyl-3-methoxy-3 - suspect-2 - awake, 6-(2-furyl)-2-methyl-1-hexen-3-one, 6-furan-2-yl-hex-1-en-3-one, acrylic acid 2 -furan-2-yl-1-methyl-ethyl ester, 6-(2-furyl)-6-methyl-1-heptane; (: 希-3-嗣, etc; having a tetrahydropyran skeleton The saturated compound 'for example is (tetrahydropyran-2-yl)methyl methacrylate, 2,6-dimethyl-8-(tetrahydropyran-2-yloxy)-oct-1-ene- 3-ketone, 2-tetrahydropyran-2-yl methacrylate, 1-(tetrahydropyran-2-oxo)-butyl-3-en-2-one, etc.; The saturated compound is, for example, 4-(1,4-dioxa--16-200903154 5-oxo-6-heptenyl) -6-methyl-2-pyrone, 4-(1,5-dioxa-6-oxo-7-saltyl)-6-methyl-2-U-pyrylate; containing the above Examples of the unsaturated compound of the skeleton represented by the formula (3) include polyethylene glycol (n = 2 to 10) mono(meth)acrylate, polypropylene glycol (n = 2 to 10) mono(meth)acrylate, and the like. An unsaturated compound containing a phenol skeleton, for example, a compound represented by the above formula (I), a compound represented by the following formulas (4) to (8), and the like;

(4) (式（4 )中，η 係 1 至 3 的整數，R1、R2、R3、R4、R5 及R6之定義係與式（I )相同）(4) In the formula (4), η is an integer from 1 to 3, and R1, R2, R3, R4, R5 and R6 are the same as in the formula (I).

(式（5 )中，R1、R2、R3、R4、R5及R6之定義係與式（ -17- 200903154 I)相同）(In the formula (5), the definitions of R1, R2, R3, R4, R5 and R6 are the same as those of the formula (-17-200903154 I))

(式（6 )中，n 係 1 至 3 的整數。R1、R2、R3、R4、R5 及R6之定義係與式（I)相同）(In the formula (6), n is an integer from 1 to 3. The definitions of R1, R2, R3, R4, R5 and R6 are the same as in the formula (I))

(式（7 )中，R1、R2、R3、R4、R5及R6之定義係與式（ I )相同）(In the formula (7), R1, R2, R3, R4, R5 and R6 are the same as defined in the formula (I))

(式（8 )中，R1、R2、R3、R4、R5及R6之定義係與式（ I )相同） -18- 200903154 其他不飽和化合物例如有丙烯腈、甲基丙烯腈、氯化 乙稀基、氯化次乙稀基、丙稀酿胺、甲基丙稀藤胺、乙酸 乙烯酯。 這些當中’較佳爲使用甲基丙烯酸烷酯、甲基丙烯酸 環狀丨兀醋、馬來釀亞§女化合物、具有四氣咲喃骨架、呋喃 骨架、四氫吡喃骨架、吡喃骨架、上述式（3)表示之骨 架之不飽和化合物、下述式（I)表示之含酚性羥基之不 飽和化合物’從共聚反應性及對於鹼水溶液之溶解性的觀 點，較佳爲甲基丙烯酸第三丁酯、三環[5.2.1.02 6]癸院-8-基甲基丙烯酸酯、對甲氧基苯乙烯、2-甲基環己基丙烯酸 酯、N-苯基馬來醯亞胺、N-環己基馬來醯亞胺 '四氫糠基 (甲基）丙烯酸酯、聚乙二醇（n = 2〜10)單（甲基）丙 烯酸酯、3-(甲基）丙醯氧基四氫呋喃-2-酮、4-羥基苄基 (甲基）丙烯酸酯、4-羥苯基（甲基）丙烯酸酯、鄰羥基 苯乙烯、對羥基苯乙烯、α-甲基-對羥基苯乙烯。這些化 合物（a3 )可單獨或組合使用。 本發明用之共聚物〔A〕之較佳例有甲基丙烯酸/三環 [5.2.1.〇26]癸烷-8-基甲基丙烯酸酯/2-甲基環己基丙烯酸 酯/甲基丙烯酸苄酯/N-( 3，5-二甲基-4-羥基苄基）甲基丙 烯醯胺、甲基丙烯酸/四氫糠基甲基丙烯酸酯/甲基丙烯酸 縮水甘油酯/ N -環己基馬來醯亞胺/月桂基甲基丙烯酸酯 /α-甲基-對羥基苯乙烯、苯乙烯/甲基丙烯酸/甲基丙烯酸 縮水甘油酯/( 3-乙基氧環丁烷-3-基）甲基丙烯酸酯/三環 [5.2.1·〇26]癸烷-8-基甲基丙烯酸酯。 -19 - 200903154 本發明用之共聚物[A]之聚苯乙烯換算重量平均分子 量（以下稱爲「Mw」），較佳爲2χ103〜1χ1〇5,更佳爲5 xlO3〜5xl〇4。Mw未達2xl〇3時，有時顯影安全係數不足 ’所得之被膜之殘膜率等降低或所得之層間絶緣膜或微透 鏡之圖案形狀、耐熱性等可能不佳，而超過lxl〇5時，有 時感度降低或圖案形狀差。分子量分布（以下稱爲「 Mw/Mn」）較佳爲5 ·0以下，更佳爲3.0以下。Mw/Mn超 過5 0時，所得之層間絶緣膜或微透鏡之圖案形狀可能不 佳。含有上述之共聚物[A]之敏輻射線性樹脂組成物在顯 影時’不會產生顯影殘留’可容易形成所定圖案形狀。 共聚物[A]製造時所使用之溶劑，例如有醇、醚、乙 二醇醚、乙二醇烷醚乙酸酯、二甘醇、丙二醇單烷醚、丙 二醇烷醚乙酸酯、丙二醇烷醚丙酸酯、芳香族烴、酮、酯 等。 這些具體例’上述醇例如有甲醇、乙醇、苄醇、2 -苯 基乙醇、3 -苯基-1-丙醇等； 醚例如有四氫呋喃等； 乙二醇醚例如有乙二醇單甲醚、乙二醇單乙醚等； 乙二醇烷醚乙酸酯例如有甲基乙二醇乙醚乙酸酯、乙 基乙二醇乙醚乙酸酯、乙二醇單丁醚乙酸酯、乙二醇單乙 醚乙酸酯等； 二甘醇醚例如二甘醇單甲醚、二甘醇單乙醚、二甘醇 二甲醚、二甘醇二乙醚、二甘醇乙基甲醚等； 丙二醇單烷醚乙酸酯例如丙二醇單甲醚乙酸酯、丙二 -20- 200903154 醇單乙醚乙酸酯、丙二醇單丙醚乙酸醋、丙二醇單丁醚乙 酸酯等； 丙二醇烷醚丙酸酯例如丙二醇甲醚丙酸酯、丙二醇乙 醚丙酸酯、丙二醇丙醚丙酸酯、丙二醇丁醚丙酸酯等； 丙二醇烷醚乙酸酯例如丙二醇甲醚乙酸酯、丙二醇乙 醚乙酸酯、丙二醇丙醚乙酸酯、丙二醇丁醚乙酸酯等； 芳香族烴例如甲苯、二甲苯等； 酮例如甲基乙酮、環己酮、4 -經基-4 -甲基-2 -戊酮等 » 酯例如乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸丁酯、 2-羥基丙酸乙酯、2-羥基-2-甲基丙酸甲酯' 2-羥基-2-甲基 丙酸乙酯、羥基乙酸甲酯、羥基乙酸乙酯、羥基乙酸丁酯 、乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、3 -羥基丙 酸甲酯、3 -羥基丙酸乙酯、3 -羥基丙酸丙酯、3 -羥基丙酸 丁酯、2-羥基-3-甲基丁酸甲酯、甲氧基乙酸甲酯、甲氧基 乙酸乙酯、甲氧基乙酸丙酯、甲氧基乙酸丁酯、乙氧基乙 酸甲酯、乙氧基乙酸乙酯、乙氧基乙酸丙酯、乙氧基乙酸 丁酯、丙氧基乙酸甲酯、丙氧基乙酸乙酯、丙氧基乙酸丙 酯、丙氧基乙酸丁酯、丁氧基乙酸甲酯、丁氧基乙酸乙酯 、丁氧基乙酸丙酯、丁氧基乙酸丁酯、2 -甲氧基丙酸甲酯 、2 -甲氧基丙酸乙酯、2 -甲氧基丙酸丙酯、2 -甲氧基丙酸 丁酯、2 -乙氧基丙酸甲酯、2 -乙氧基丙酸乙酯、2 -乙氧基 丙酸丙酯、2_乙氧基丙酸丁酯' 2 -丁氧基丙酸甲酯、2 -丁 氧基丙酸乙酯、2 -丁氧基丙酸丙酯、2· 丁氧基丙酸丁酯、 -21 - 200903154 3 -甲氧基丙酸甲酯、3 -甲氧基丙酸乙酯、3 -甲氧基丙酸丙 酯、3 -甲氧基丙酸丁酯、3 -乙氧基丙酸甲酯、3 -乙氧基丙 酸乙酯、3 -乙氧基丙酸丙酯、3 -乙氧基丙酸丁酯、3 -丙氧 基丙酸甲酯、3-丙氧基丙酸乙酯、3_丙氧基丙酸丙酯、3_ 丙氧基丙酸丁酯、3-丁氧基丙酸甲酯、3-丁氧基丙酸乙酯 、3 -丁氧基丙酸丙酯、3 -丁氧基丙酸丁酯等之酯。 其中較佳者爲乙二醇院醚乙酸醋、二甘醇、丙二醇單 烷醚、丙二醇烷醚乙酸酯等’特別理想爲二甘醇二甲醚、 二甘醇乙基甲醚、丙二醇甲醚、丙二醇乙醚、丙二醇甲醚 乙酸酯、3 -甲氧基丙酸甲酯。 製造共聚物〔A〕所用之聚合引發劑一般可使用自由 基聚合引發劑。例如2,2’-偶氮雙異丁腈、2,2’-偶氮雙（ 2.4-二甲基戊腈）、2,2’-偶氮雙-(4-甲氧基-2,4-二甲基戊 腈）等之偶氮化合物；苯甲醯基過氧化物、月桂醯基過氧 化物、第三丁基過氧化戊酸酯、1,1’-雙-(第三丁基過氧 化）環己烷等之有機過氧化物；過氧化氫。使用過氧化物 作爲自由基聚合引發劑時，過氧化物與還原劑共同使用也 可作爲氧化還原型引發劑。 製造共聚物〔A〕時，爲了調整分子量，可使用分子 量調整劑。分子量調整劑之具體例如氯仿、四溴化碳等之 鹵化烴；正己基硫醇、正辛基硫醇、正十二烷基硫醇、 tert-十二烷基硫醇、锍基乙酸等之硫醇；二甲基乙黄原硫 醚、二-異丙基乙黄原二硫醚等之乙黄原；蔥品油烯、α-甲基苯乙烯二聚物等。 -22- 200903154 [B]成分 本發明使用之[B]成分係藉由輻射線照射產生羧酸之 1,2-醌二疊氮化合物，可使用酚性化合物或醇性化合物（ 以下稱爲「母核」）與1，2-萘醌二疊氮磺酸鹵化物之縮合 物。 上述母核例如有三羥基二苯甲酮、四羥基二苯甲酮、 五羥基二苯甲酮、六羥基二苯甲酮、（聚羥基苯基）鏈烷 、其他的母核。 這些之具體例，其中三羥基二苯甲酮例如有2,3,4 -三 羥基二苯甲酮、2，4,6-三羥基二苯甲酮等； 四羥基二苯甲酮例如有2,2’，4,4’-四羥基二苯甲酮、 2，3,4,3’ -四羥基二苯甲酮、2,3,4,4’ -四羥基二苯甲酮、 2,3,4,2’-四羥基-4’-甲基二苯甲酮、2,3,4,4’-四羥基-3’-甲 氧基二苯甲酮等； 五羥基二苯甲酮例如2,3,4,2’，6’-五羥基二苯甲酮等； 六羥基二苯甲酮例如 2,4,6,3’，4’，5’-六羥基二苯甲酮、 3,4,5,3’，4’，5’-六羥基二苯甲酮等； (聚羥基苯基）鏈烷例如雙（2,4-二羥基苯基）甲烷 、雙（對羥基苯基）甲烷、三（對羥基苯基）甲烷、 1,1,1-參（對羥基苯基）乙烷、雙（2,3,4-三羥基苯基）甲 烷、2,2 -雙（2,3,4 -三羥基苯基）丙烷、1,1,3 -參（2,5 -二 甲基-4-羥基苯基）-3 -苯基丙烷、4,4’-[1-[4-[1-[4 -羥基苯 基]-1-甲基乙基]苯基]次乙基]雙酚、雙（2,5-二甲基-4-羥 -23- 200903154 基苯基）-2-羥基苯基甲烷、3,3,3’，3’-四甲基-1,1’·螺旋二 茚-5,6,7,5’，6’，7’-己醇、2,2,4-三甲基-7,2’，4’-三羥基黄烷 等； 其他之母核例如有2 -甲基-2- (2,4 -二羥基苯基）-4-(4-羥基苯基）-7-羥基色滿、2-[雙{( 5-異丙基-4-羥基-2-甲基）苯基}甲基]、1-[1-(3-{1-(4-羥基苯基）-1-甲 基乙基}-4,6 - 一經基本基）-1-甲基乙基]-3- ( 1- ( 3-{1-( 4-羥基苯基）-1-甲基乙基}-4,6-二羥基苯基）-1-甲基乙基 )本、4,6 -雙{1-(4 -經基本基）-1-甲基乙基]-1 ,3 - _經基 苯。 也可使用將上述例示之母核之酯鍵改爲醯胺鍵之1,2-萘醌二疊氮磺酸醯胺，例如有2,3,4-三羥基二苯甲酮-1,2-萘醌二疊氮-4-磺酸醯胺等。 這些之母核中，較佳爲 2,3,4,4’-四羥基二苯甲酮、 4,4’-〔1-〔4-〔1-〔4-羥基苯基〕-1-甲基乙基〕苯基〕次 亞基〕雙酚。 又，1,2-萘醌二疊氮磺酸鹵化物較佳爲1，2-萘醌二疊 氮磺酸氯，其具體例有1,2-萘醌二疊氮-4-磺酸氯及1,2-萘 醌二疊氮-5-磺酸氯，其中較佳爲使用1,2-萘醌二疊氮-5-磺酸氯。 縮合反應係對於酚性化合物或醇性化合物中之OH基 數，較佳爲使用相當於30〜85莫耳％，更較佳爲50〜70 莫耳％之1,2-萘醌二疊氮磺酸鹵化物。 縮合反應可使用公知的方法。 -24- 200903154 這些[B]成分可單獨或組合2種以上使用。 [B]成分之使用比例係對於共聚物[A] 1〇〇重量份 用5〜100重量份，更佳爲10〜5〇重量份。比例未達 量份時’對於成爲顯影液之鹼水溶液之輻射線之照射 與未照射部份之溶解度差較小，有時圖型化困難，有 得之層間絕緣膜或微透鏡之耐熱性或耐溶劑性不佳。 ’比例超過1 0 0重量份時，輻射線照射部份中，對於 記鹼水溶液之溶解度不佳，顯影困難。 [C]成分 本發明所使用之[C]成分係含有與前述[A]成分藉 產生交聯反應之官能基的矽氧烷低聚物，較佳爲下述 1 )及下述式（2 )之各自表示之烷氧基矽烷經共水解 之矽氧烷低聚物（以下有時稱爲矽氧烷低聚物I )或 式（9 )表示之矽氧烷低聚物，即氧環丁基矽化物的 物（以下有時稱爲砂氧垸低聚物11 )。(In the formula (8), R1, R2, R3, R4, R5 and R6 are the same as those of the formula (I)) -18- 200903154 Other unsaturated compounds such as acrylonitrile, methacrylonitrile, and ethylene chloride Base, chlorinated vinylidene, acrylamide, methacrylamide, vinyl acetate. Among these, 'preferably use alkyl methacrylate, methacrylic acid cyclic vinegar, maleic § female compound, four-gas ruthenium skeleton, furan skeleton, tetrahydropyran skeleton, pyran skeleton, The unsaturated compound of the skeleton represented by the above formula (3) and the phenolic hydroxyl group-containing unsaturated compound represented by the following formula (I) are preferably methacrylic acid from the viewpoints of copolymerization reactivity and solubility in an aqueous alkali solution. Tert-butyl ester, tricyclo[5.2.1.02 6] brothel-8-yl methacrylate, p-methoxystyrene, 2-methylcyclohexyl acrylate, N-phenylmaleimide, N-cyclohexylmaleimide 'tetrahydroindenyl (meth) acrylate, polyethylene glycol (n = 2 to 10) mono (meth) acrylate, 3-(methyl) propyl hydroxy Tetrahydrofuran-2-one, 4-hydroxybenzyl (meth) acrylate, 4-hydroxyphenyl (meth) acrylate, o-hydroxystyrene, p-hydroxystyrene, α-methyl-p-hydroxystyrene. These compounds (a3) can be used singly or in combination. A preferred example of the copolymer [A] used in the present invention is methacrylic acid/tricyclo[5.2.1.〇26]decane-8-ylmethacrylate/2-methylcyclohexyl acrylate/methyl Benzyl acrylate/N-(3,5-dimethyl-4-hydroxybenzyl)methacrylamide, methacrylic acid/tetrahydrofurfuryl methacrylate/glycidyl methacrylate/N-ring Hexylmaline imine/lauryl methacrylate/α-methyl-p-hydroxystyrene, styrene/methacrylic acid/glycidyl methacrylate/(3-ethyloxocyclobutane-3- Methyl methacrylate / tricyclo [5.2.1 · 〇 26] decane-8-yl methacrylate. -19 - 200903154 The polystyrene-equivalent weight average molecular weight (hereinafter referred to as "Mw") of the copolymer [A] used in the present invention is preferably 2χ103~1χ1〇5, more preferably 5 xlO3~5xl〇4. When the Mw is less than 2xl〇3, the development safety factor may be insufficient. The residual film ratio of the obtained film may be lowered, or the pattern shape and heat resistance of the obtained interlayer insulating film or microlens may be poor, and may exceed lxl〇5. Sometimes the sensitivity is lowered or the pattern is poor. The molecular weight distribution (hereinafter referred to as "Mw/Mn") is preferably 5,000 or less, more preferably 3.0 or less. When the Mw/Mn exceeds 50, the resulting interlayer insulating film or microlens may have a poor pattern shape. The radiation sensitive linear resin composition containing the above copolymer [A] can be easily formed into a predetermined pattern shape when development does not occur. The solvent used in the production of the copolymer [A], for example, an alcohol, an ether, a glycol ether, an ethylene glycol alkyl ether acetate, a diethylene glycol, a propylene glycol monoalkyl ether, a propylene glycol alkyl ether acetate, a propylene glycol alkane. Ether propionate, aromatic hydrocarbon, ketone, ester, and the like. These specific examples are as follows: methanol, ethanol, benzyl alcohol, 2-phenylethanol, 3-phenyl-1-propanol, etc.; ethers such as tetrahydrofuran, etc.; glycol ethers such as ethylene glycol monomethyl ether , ethylene glycol monoethyl ether, etc.; ethylene glycol alkyl ether acetate such as methyl glycol ether acetate, ethyl glycol ether acetate, ethylene glycol monobutyl ether acetate, ethylene Alcohol monoethyl ether acetate, etc.; diethylene glycol ether such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diglyme, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, etc.; An alkyl ether acetate such as propylene glycol monomethyl ether acetate, propylene di-20- 200903154 alcohol monoethyl ether acetate, propylene glycol monopropyl ether acetate vinegar, propylene glycol monobutyl ether acetate, etc.; propylene glycol alkane ether propionate, for example Propylene glycol methyl ether propionate, propylene glycol diethyl ether propionate, propylene glycol propyl ether propionate, propylene glycol butyl ether propionate, etc.; propylene glycol alkyl ether acetate such as propylene glycol methyl ether acetate, propylene glycol diethyl ether acetate, propylene glycol Ether acetate, propylene glycol butyl ether acetate, etc.; aromatic hydrocarbons such as toluene, xylene, etc. Ketones such as methyl ethyl ketone, cyclohexanone, 4-cyano-4-methyl-2-pentanone, etc., such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, 2-hydroxypropyl Ethyl ethyl ester, methyl 2-hydroxy-2-methylpropanoate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl glycolate, methyl lactate, lactic acid Ethyl ester, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, 2-hydroxy-3-methyl Methyl butyrate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, ethoxylate Propyl propyl acetate, butyl ethoxy acetate, methyl propoxyacetate, ethyl propoxyacetate, propyl propoxy propyl acetate, butyl propyl acetate, methyl butoxyacetate, butoxy Ethyl acetate, propyl butoxyacetate, butyl butoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, 2- Butyl methoxypropionate, 2-ethoxyl Methyl ester, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, 2-butoxypropane Ethyl ethyl ester, propyl 2-butoxypropionate, butyl 2, butoxypropionate, -21 - 200903154 3 - methyl methoxypropionate, ethyl 3-methoxypropionate, 3 - Propyl methoxypropionate, butyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, 3- Butyl ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, propyl 3-propoxypropionate, butyl 3-propoxypropionate, 3-butyl An ester of methyl oxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, butyl 3-butoxypropionate or the like. The preferred ones are ethylene glycol ether vinegar, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, etc. 'Specially ideally diglyme, diethylene glycol ethyl methyl ether, propylene glycol A Ether, propylene glycol diethyl ether, propylene glycol methyl ether acetate, methyl 3-methoxypropionate. As the polymerization initiator used for the production of the copolymer [A], a radical polymerization initiator can be generally used. For example 2,2'-azobisisobutyronitrile, 2,2'-azobis(2.4-dimethylvaleronitrile), 2,2'-azobis-(4-methoxy-2,4 - azo compound such as dimethyl valeronitrile; benzhydryl peroxide, lauryl peroxide, t-butyl peroxy valerate, 1,1'-bis-(t-butyl Peroxidic) an organic peroxide such as cyclohexane; hydrogen peroxide. When a peroxide is used as the radical polymerization initiator, the peroxide can be used together with the reducing agent as a redox initiator. When the copolymer [A] is produced, a molecular weight adjuster can be used in order to adjust the molecular weight. Specific examples of the molecular weight modifier include halogenated hydrocarbons such as chloroform and carbon tetrabromide; n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, tert-dodecyl mercaptan, mercaptoacetic acid, and the like. Mercaptan; dimethyl xanthogen thioether, di-isopropylephedrine disulfide, etc.; enamelline, α-methylstyrene dimer, and the like. -22- 200903154 [B] component The [B] component used in the present invention is a 1,2-quinonediazide compound which generates a carboxylic acid by irradiation with radiation, and a phenolic compound or an alcoholic compound (hereinafter referred to as " A condensate of a parent nucleus") with a 1,2-naphthoquinonediazide sulfonic acid halide. The above-mentioned mother nucleus is, for example, trihydroxybenzophenone, tetrahydroxybenzophenone, pentahydroxybenzophenone, hexahydroxybenzophenone, (polyhydroxyphenyl)alkane, or other mother nucleus. Specific examples of these, wherein the trihydroxybenzophenone is, for example, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone or the like; tetrahydroxybenzophenone has, for example, 2 , 2',4,4'-tetrahydroxybenzophenone, 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2, 3,4,2'-tetrahydroxy-4'-methylbenzophenone, 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone, etc.; pentahydroxybenzophenone For example, 2,3,4,2',6'-pentahydroxybenzophenone, etc.; hexahydroxybenzophenone such as 2,4,6,3',4',5'-hexahydroxybenzophenone, 3,4,5,3',4',5'-hexahydroxybenzophenone, etc.; (polyhydroxyphenyl)alkane such as bis(2,4-dihydroxyphenyl)methane, bis(p-hydroxybenzene) Methane, tris(p-hydroxyphenyl)methane, 1,1,1-paraxyl (p-hydroxyphenyl)ethane, bis(2,3,4-trihydroxyphenyl)methane, 2,2-di ( 2,3,4-trihydroxyphenyl)propane, 1,1,3-gin(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane, 4,4'-[1- [4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol, bis(2,5-dimethyl-4- Hydroxy-23- 200903154 phenyl)-2-hydroxyphenylmethane, 3,3,3',3'-tetramethyl-1,1'·helical diterpene-5,6,7,5',6 ',7'-hexanol, 2,2,4-trimethyl-7,2',4'-trihydroxyflavan, etc.; other parent cores such as 2-methyl-2- (2,4 - Dihydroxyphenyl)-4-(4-hydroxyphenyl)-7-hydroxychroman, 2-[bis{(5-isopropyl-4-hydroxy-2-methyl)phenyl}methyl], 1-[1-(3-{1-(4-Hydroxyphenyl)-1-methylethyl}-4,6--based base)-1-methylethyl]-3-( 1- ( 3-{1-(4-hydroxyphenyl)-1-methylethyl}-4,6-dihydroxyphenyl)-1-methylethyl), 4,6-double {1-(4 - via the basic group)-1-methylethyl]-1,3 - _ylbenzene. It is also possible to use 1,2-naphthoquinonediazidesulfonate amide which changes the ester bond of the above-exemplified parent core to a guanamine bond, for example, 2,3,4-trihydroxybenzophenone-1,2 - Naphthoquinone diazide-4-sulfonic acid decylamine and the like. Among these, the nucleus is preferably 2,3,4,4'-tetrahydroxybenzophenone, 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methyl Ethylethyl]phenyl]heptylene]bisphenol. Further, the 1,2-naphthoquinonediazidesulfonic acid halide is preferably 1,2-naphthoquinonediazidesulfonic acid chloride, and specific examples thereof are 1,2-naphthoquinonediazide-4-sulfonic acid chloride. And 1,2-naphthoquinonediazide-5-sulfonic acid chloride, of which 1,2-naphthoquinonediazide-5-sulfonic acid chloride is preferably used. The condensation reaction is preferably a 1,2-naphthoquinonediazide sulfonate corresponding to 30 to 85 mol%, more preferably 50 to 70 mol%, of the OH group in the phenolic compound or the alcohol compound. Acid halide. A well-known method can be used for a condensation reaction. -24- 200903154 These [B] components can be used alone or in combination of two or more. The ratio of use of the component [B] is 5 to 100 parts by weight, more preferably 10 to 5 parts by weight, per part by weight of the copolymer [A]. When the ratio is not sufficient, the difference in solubility between the irradiated and non-irradiated portions of the aqueous solution which becomes the developing solution is small, and sometimes the patterning is difficult, and the heat resistance of the interlayer insulating film or the microlens is obtained or Poor solvent resistance. When the ratio exceeds 100 parts by weight, the solubility in the irradiated portion of the radiation is poor, and development is difficult. [C] component The [C] component used in the present invention is a siloxane oligomer having a functional group which undergoes a crosslinking reaction with the above [A] component, and is preferably the following 1) and the following formula (2) a co-hydrolyzed alkoxysilane oligomer (hereinafter sometimes referred to as a decane oligomer I) or a oxane oligomer represented by the formula (9), that is, an oxygen ring A butyl telluride (hereinafter sometimes referred to as a sand oxide oligomer 11).

Si(R8)s(R9)t(OR10)u ( 1 ) 式中’ R8係表示含有環氧基 '氧環丁基、環硫基 烯基、烯丙基、（甲基）丙烯醯基、羧基、羥基、氫 、異氰酸酯基、胺基、脲基或苯乙烯基得取代基， R1Q係可相同或不同’各爲1價有機基，S係1〜3的 ，t係〇〜2的整數，U係1〜3的整數，但是s + t + u = 4 S i (R 1 1) X (〇 R12) 4 - X ( 2) 式中R11、R係可相同或不同，各爲1價有機g ，使 5重 部份 時所 另外 前述 由熱 式（ 製造 下述 縮合 、乙 硫基 R9、 整數 -25- 200903154 係0〜2的整數。 上述共水解物應係包含原料中可被水解之部份 被水解者及其一部份被水解，一部份未被水解，而 〇 含有環氧基之化合物（1 )之具體例，例如有 丙氧基甲基三甲氧基矽烷、3 -環氧丙氧基甲基三乙 烷、3-環氧丙氧基甲基三-η-丙氧基矽烷、3-環氧丙 基三-i-丙氧基矽烷、3-環氧丙氧基甲基三乙醯氧基 3 -環氧丙氧基甲基甲基二甲氧基矽烷、3 -環氧丙氧 甲基二乙氧基矽烷、3-環氧丙氧基甲基甲基二-η-丙 烷、3-環氧丙氧基甲基甲基二-i-丙氧基矽烷、3-環 基甲基甲基二乙醯氧基矽烷、3 -環氧丙氧基甲基乙 氧基矽烷、3 -環氧丙氧基甲基乙基二乙氧基矽烷、 丙氧基甲基乙基二-η-丙氧基矽烷、3-環氧丙氧基甲 二-i-丙氧基矽烷、3-環氧丙氧基甲基乙基二乙醯氧 、3 -環氧丙氧基甲基苯基二甲氧基矽烷、3 -環氧丙 基苯基二乙氧基矽烷、3-環氧丙氧基甲基苯基二-η. 矽烷、3-環氧丙氧基甲基苯基二-i-丙氧基矽烷、3-氧基甲基苯基二乙醯氧基矽烷、3 -環氧丙氧基乙基 基矽烷、3 -環氧丙氧基乙基三乙氧基矽烷、3 -環氧 乙基三-η-丙氧基矽烷、3-環氧丙氧基乙基三-i-丙氧 、3 -環氧丙氧基乙基三乙醯氧基矽烷、3 -環氧丙氧 甲基二甲氧基矽烷、3 -環氧丙氧基乙基甲基二乙氧 、3-環氧丙氧基乙基甲基二- η-丙氧基矽烷、3-環氧 的全部 殘留者 3_環氧 氧基矽 氧基甲 矽烷、 基甲基 氧基矽 氧丙氧 基二甲 3-環氧 基乙基 基矽烷 氧基甲 丙氧基 環氧丙 三甲氧 丙氧基 基矽烷 某乙基 基矽烷 丙氧基 -26- 200903154 乙基甲基二-i-丙氧基矽烷、3 -環氧丙氧基乙基甲基二乙醯 氧基矽烷、3 -環氧丙氧基乙基乙基二甲氧基矽烷、3 -環氧 丙氧基乙基乙基二乙氧基矽烷、3-環氧丙氧基乙基乙基二-n-丙氧基矽烷、3-環氧丙氧基乙基乙基二-i-丙氧基矽烷、 3 -環氧丙氧基乙基乙基二乙醯氧基矽烷、3 -環氧丙氧基乙 基苯基二甲氧基矽烷、3 -環氧丙氧基乙基苯基二乙氧基矽 烷、3-環氧丙氧基乙基苯基二-η-丙氧基矽烷、3-環氧丙氧 基乙基苯基二-i-丙氧基矽烷、3-環氧丙氧基乙基苯基二乙 醯氧基矽烷、3 -環氧丙氧基丙基三甲氧基矽烷、3 -環氧丙 氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基三-η-丙氧基矽 烷、3-環氧丙氧基丙基三-i-丙氧基矽烷、3-環氧丙氧基丙 基三乙醯氧基矽烷、3 -環氧丙氧基丙基甲基二甲氧基矽烷 、3 -環氧丙氧基丙基甲基二乙氧基矽烷、3 -環氧丙氧基丙 基甲基二-η-丙氧基矽烷、3-環氧丙氧基丙基甲基二-i-丙氧 基矽烷、3 -環氧丙氧基丙基甲基二乙醯氧基矽烷、3 -環氧 丙氧基丙基乙基二甲氧基矽烷、3-環氧丙氧基丙基乙基二 乙氧基矽烷、3-環氧丙氧基丙基乙基二- η-丙氧基矽烷、3-環氧丙氧基丙基乙基二-i-丙氧基矽烷、3-環氧丙氧基丙基 乙基二乙醯氧基矽烷、3 -環氧丙氧基丙基苯基二甲氧基矽 烷、3 -環氧丙氧基丙基苯基二乙氧基矽烷、3 -環氧丙氧基 丙基苯基二- η-丙氧基矽烷、3-環氧丙氧基丙基苯基二-i-丙 氧基矽烷、3 -環氧丙氧基丙基苯基二乙醯氧基矽烷、2-( 3,4-環氧基環己基）甲基三甲氧基矽烷、2- ( 3,4-環氧基 環己基）甲基三乙氧基矽烷、2-(3,4-環氧基環己基）甲 -27- 200903154 基三- η-丙氧基矽烷、2- (3,4-環氧基環己基）甲基三乙醯 氧基矽烷、2- ( 3，4-環氧基環己基）甲基甲基二甲氧基矽 烷、2- (3,4-環氧基環己基）甲基甲基二乙氧基矽烷、2-(3,4-環氧基環己基）甲基甲基二-η-丙氧基矽烷、2-( 3,4-環氧基環己基）甲基甲基二乙醯氧基矽烷、2- ( 3,4-環氧基環己基）甲基乙基二甲氧基矽烷、2-(3,4-環氧基 環己基）甲基乙基二乙氧基矽烷、2- ( 3,4-環氧基環己基 )甲基乙基二-η-丙氧基矽烷、2- ( 3,4-環氧基環己基）甲 基乙基二乙醯氧基矽烷、2- (3,4-環氧基環己基）甲基苯 基二甲氧基矽烷、2- (3,4-環氧基環己基）甲基苯基二乙 氧基矽烷、2- ( 3,4-環氧基環己基）甲基苯基二-η-丙氧基 矽烷、2- (3,4-環氧基環己基）甲基苯基二乙醯氧基矽烷 、2-(3,4-環氧基環己基）乙基三甲氧基矽烷、2-(3,4-環 氧基環己基）乙基三乙氧基矽烷、2- ( 3，4-環氧基環己基 )乙基三-η-丙氧基矽烷、2- ( 3，4-環氧基環己基）乙基三 乙醯氧基矽烷、2- (3,4-環氧基環己基）乙基甲基二甲氧 基矽烷、2- (3,4-環氧基環己基）乙基甲基二乙氧基矽烷 、2- ( 3,4-環氧基環己基）乙基甲基二-η-丙氧基矽烷、2-(3，4-環氧基環己基）乙基甲基二乙醯氧基矽烷、2-( 3，4-環氧基環己基）乙基乙基二甲氧基矽烷、2- ( 3,4-環 氧基環己基）乙基乙基二乙氧基矽烷、2- (3,4 -環氧基環 己基）乙基乙基二-η-丙氧基矽烷、2- ( 3,4-環氧基環己基 )乙基乙基二乙醯氧基矽烷、2-(3,4-環氧基環己基）乙 基苯基二甲氧基矽烷、2- (3,4-環氧基環己基）乙基苯基 -28 - 200903154 二乙氧基矽烷、2- ( 3,4-環氧基環己基）乙基苯基二-η-丙 氧基矽烷、2- (3,4 -環氧基環己基）乙基苯基二乙醯氧基 矽烷、2- ( 3,4-環氧基環己基）丙基三甲氧基矽烷、2-( 3,4-環氧基環己基）丙基三乙氧基矽烷、2- ( 3,4-環氧基 環己基）丙基三-η-丙氧基矽烷、2- ( 3,4-環氧基環己基） 丙基三乙醯氧基矽烷、2- (3,4-環氧基環己基）丙基甲基 二甲氧基矽烷、2- (3,4-環氧基環己基）丙基甲基二乙氧 基矽烷、2-(3,4-環氧基環己基）丙基甲基二-η-丙氧基矽 烷、2- (3,4-環氧基環己基）丙基甲基二乙醯氧基矽烷、 2-(3,4-環氧基環己基）丙基乙基二甲氧基矽烷、2-(3,4-環氧基環己基）丙基乙基二乙氧基矽烷、2-(3,4-環氧基 環己基）丙基乙基二-η-丙氧基矽烷、2- ( 3,4-環氧基環己 基）丙基乙基二乙醯氧基矽烷、2-(3,4-環氧基環己基） 丙基苯基二甲氧基矽烷、2- ( 3，4-環氧基環己基）丙基苯 基二乙氧基矽烷、2- (3,4-環氧基環己基）丙基苯基二- n-丙氧基矽烷、2- ( 3,4-環氧基環己基）丙基苯基二乙醯氧 基矽烷等； 含有環硫基之化合物（1 )之具體例，例如有2,3 -環 硫丙氧基甲基三甲氧基矽烷、2,3-環硫丙氧基甲基三乙氧 基矽烷、2,3-環硫丙氧基甲基三-η-丙氧基矽烷、2,3·環硫 丙氧基甲基三-i-丙氧基矽烷、2,3-環硫丙氧基甲基三乙醯 氧基矽烷、2,3 -環硫丙氧基甲基甲基二甲氧基矽烷、2,3 -環硫丙氧基甲基甲基二乙氧基矽烷、2,3-環硫丙氧基甲基 甲基二-η-丙氧基矽烷、2,3-環硫丙氧基甲基甲基二-i-丙氧 -29- 200903154 基矽烷、2,3-環硫丙氧基甲基甲基二乙醯氧基矽烷、2,3-環硫丙氧基甲基乙基二甲氧基矽烷、2,3 -環硫丙氧基甲基 乙基二乙氧基矽烷、2,3-環硫丙氧基甲基乙基二-η-丙氧基 矽烷、2,3-環硫丙氧基甲基乙基二-i-丙氧基矽烷、2,3-環 硫丙氧基甲基乙基二乙醯氧基矽烷、2,3-環硫丙氧基甲基 苯基二甲氧基矽烷、2,3-環硫丙氧基甲基苯基二乙氧基矽 烷、2,3-環硫丙氧基甲基苯基二-η-丙氧基矽烷、2,3-環硫 丙氧基甲基苯基二-i-丙氧基矽烷、2,3-環硫丙氧基甲基苯 基二乙醯氧基矽烷、2,3 -環硫丙氧基乙基三甲氧基矽烷、 2.3 -環硫丙氧基乙基三乙氧基矽烷、2,3 -環硫丙氧基乙基 三-η-丙氧基矽烷、2,3-環硫丙氧基乙基三-i-丙氧基矽烷、 2.3 -環硫丙氧基乙基三乙醯氧基矽烷、2,3 -環硫丙氧基乙 基甲基二甲氧基矽烷、2,3 -環硫丙氧基乙基甲基二乙氧基 矽烷、2,3-環硫丙氧基乙基甲基二-η-丙氧基矽烷、2,3-環 硫丙氧基乙基甲基二-i-丙氧基矽烷、2,3-環硫丙氧基乙基 甲基二乙醯氧基矽烷、2,3 -環硫丙氧基乙基乙基二甲氧基 矽烷、2,3 -環硫丙氧基乙基乙基二乙氧基矽烷、2,3 -環硫 丙氧基乙基乙基二-η-丙氧基矽烷、2,3-環硫丙氧基乙基乙 基二-i-丙氧基矽烷、2,3-環硫丙氧基乙基乙基二乙醯氧基 矽烷、2,3 -環硫丙氧基乙基苯基二甲氧基矽烷、2,3 -環硫 丙氧基乙基本基乙氧基砂院、2,3 -ί哀硫丙氧基乙基苯基 二-η-丙氧基矽烷、2,3-環硫丙氧基乙基苯基二-i-丙氧基矽 烷、2,3 -環硫丙氧基乙基苯基二乙醯氧基矽烷、2,3 -環硫 丙氧基丙基三甲氧基矽烷' 2,3-環硫丙氧基丙基三乙氧基 -30 - 200903154 矽烷、2,3-環硫丙氧基丙基三-η-丙氧基矽烷、2,3-環硫丙 氧基丙基三-i-丙氧基矽烷、2,3-環硫丙氧基丙基三乙醯氧 基矽烷、2,3-環硫丙氧基丙基甲基二甲氧基矽烷、2,3-環 硫丙氧基丙基甲基二乙氧基矽烷、2,3-環硫丙氧基丙基甲 基二-η-丙氧基矽烷、2,3-環硫丙氧基丙基甲基二-i-丙氧基 矽烷、2，3 -環硫丙氧基丙基甲基二乙醯氧基矽烷、2,3 -環 硫丙氧基丙基乙基二甲氧基矽烷、2,3 -環硫丙氧基丙基乙 基二乙氧基矽烷、2,3-環硫丙氧基丙基乙基二- η-丙氧基矽 烷、2,3-環硫丙氧基丙基乙基二-i-丙氧基矽烷、2,3-環硫 丙氧基丙基乙基二乙醯氧基矽烷、2,3 -環硫丙氧基丙基苯 基二甲氧基矽烷、2,3 -環硫丙氧基丙基苯基二乙氧基矽烷 、2,3-環硫丙氧基丙基苯基二-η-丙氧基矽烷、2,3-環硫丙 氧基丙基苯基二-i-丙氧基矽烷、2,3-環硫丙氧基丙基苯基 二乙醯氧基矽烷等； 含有氧環丁基之化合物（1 )之具體例，例如有 (氧環丁烷-3-基）甲基三甲氧基矽烷、（氧環丁烷-3-基）甲基三乙氧基矽烷、（氧環丁烷-3-基）甲基三-n-丙氧基矽烷、（氧環丁烷-3_基）甲基三-i-丙氧基矽烷、 (氧環丁烷_3_基）甲基三乙醯氧基矽烷、（氧環丁烷-3-基）甲基甲基二甲氧基矽烷、（氧環丁烷-3-基）甲基甲基 二乙氧基矽烷、（氧環丁烷-3-基）甲基甲基二-η-丙氧基 矽烷、（氧環丁烷-3-基）甲基甲基二-i-丙氧基矽烷、（ 氧環丁烷-3-基）甲基甲基二乙醯氧基矽烷、（氧環丁烷-3 -基）甲基乙基二甲氧基矽烷、（氧環丁烷-3 -基）甲基乙 -31 - 200903154 基二乙氧基矽烷、（氧環丁烷_3_基）甲基乙基二-η-丙氧 基矽烷、（氧環丁烷-3-基）甲基乙基二-i-丙氧基矽烷、 (氧環丁烷-3-基）甲基乙基二乙醯氧基矽烷、（氧環丁 烷-3 -基）甲基苯基二甲氧基矽烷、（氧環丁烷-3-基）甲 基苯基二乙氧基矽烷、（氧環丁烷-3-基）甲基苯基二-n-丙氧基矽烷、（氧環丁烷-3-基）甲基苯基二-i-丙氧基矽 烷、（氧環丁烷-3 -基）甲基苯基二乙醯氧基矽烷、（氧環 丁烷-3-基）乙基三甲氧基矽烷、（氧環丁烷-3-基）乙基 三乙氧基矽烷、（氧環丁烷-3-基）乙基三-η-丙氧基矽烷 、（氧環丁烷-3-基）乙基三-i-丙氧基矽烷、（氧環丁烷-3-基）乙基三乙醯氧基矽烷、（氧環丁烷-3-基）乙基甲基 二甲氧基矽烷、（氧環丁烷-3-基）乙基甲基二乙氧基矽烷 、（氧環丁烷-3-基）乙基甲基二-η-丙氧基矽烷、（氧環 丁烷-3-基）乙基甲基二-i-丙氧基矽烷、（氧環丁烷-3-基 )乙基甲基二乙醯氧基矽烷、（氧環丁烷-3-基）乙基乙基 二甲氧基矽烷、（氧環丁烷-3-基）乙基乙基二乙氧基矽烷 、（氧環丁烷-3-基）乙基乙基二-η-丙氧基矽烷、（氧環 丁烷-3-基）乙基乙基二-i-丙氧基矽烷、（氧環丁烷-3-基 )乙基乙基二乙醯氧基矽烷、（氧環丁烷-3-基）乙基苯基 二甲氧基矽烷、（氧環丁烷-3-基）乙基苯基二乙氧基矽烷 、（氧環丁烷-3-基）乙基苯基二-η-丙氧基矽烷、（氧環 丁烷-3-基）乙基苯基二-i-丙氧基矽烷、（氧環丁烷-3-基 )乙基苯基二乙醯氧基矽烷、（氧環丁烷-3-基）丙基三甲 氧基矽烷、（氧環丁烷-3 -基）丙基三乙氧基矽烷、（氧環 -32- 200903154 丁烷-3-基）丙基三-η-丙氧基矽烷、（氧環丁烷-3-基）丙 基三-i-丙氧基矽烷、（氧環丁烷-3-基）丙基三乙醯氧基 矽烷、（氧環丁烷-3-基）丙基甲基二甲氧基矽烷、（氧環 丁烷-3-基）丙基甲基二乙氧基矽烷、（氧環丁烷-3-基） 丙基甲基二-η-丙氧基矽烷、（氧環丁烷-3-基）丙基甲基 二-i-丙氧基矽烷、（氧環丁烷-3-基）丙基甲基二乙醯氧 基矽烷、（氧環丁烷-3-基）丙基乙基二甲氧基矽烷、（氧 環丁烷-3 -基）丙基乙基二乙氧基矽烷、（氧環丁烷-3 -基 )丙基乙基二-η-丙氧基矽烷、（氧環丁烷-3-基）丙基乙 基二-i-丙氧基矽烷、（氧環丁烷-3-基）丙基乙基二乙醯 氧基矽烷、（氧環丁烷-3 -基）丙基苯基二甲氧基矽烷、（ 氧環丁院-3-基）丙基苯基_乙氧基砂院、（氧ί哀丁院- 3· 基）丙基苯基二-η-丙氧基矽烷、（氧環丁烷-3-基）丙基 苯基二-i-丙氧基矽烷、（氧環丁烷-3-基）丙基苯基二乙 醯氧基矽烷、（3 -甲基氧環丁烷-3 -基）甲基三甲氧基矽烷 、（3-甲基氧環丁烷-3-基）甲基三乙氧基矽烷、（3-甲基 氧環丁烷-3-基）甲基三- η-丙氧基矽烷、（3 -甲基氧環丁 院-3 -基）甲基二-i-丙氧基ίΐ夕；t完、（3 -甲基氧1哀丁院-3 -基 )甲基三乙醯氧基矽烷、（3-甲基氧環丁烷-3-基）甲基甲 基二甲氧基矽烷、（3-甲基氧環丁烷-3-基）甲基甲基二乙 氧基矽烷、（3-甲基氧環丁烷-3-基）甲基甲基二-η-丙氧 基矽烷、（3-甲基氧環丁烷-3-基）甲基甲基二-i-丙氧基矽 院、（3 -甲基氧ί哀丁院-3-基）甲基甲基_乙酷氧基5夕院、 (3-甲基氧環丁烷-3-基）甲基乙基二甲氧基矽烷、（3-甲 -33- 200903154 基氧環丁烷-3-基）甲基乙基二乙氧基矽烷、（3-甲基氧環 丁烷-3-基）甲基乙基二-η-丙氧基矽烷、（3-甲基氧環丁 烷-3-基）甲基乙基二-i-丙氧基矽烷、（3 -甲基氧環丁烷-3 -基）甲基乙基二乙醯氧基矽烷、（3 -甲基氧環丁烷-3-基 )甲基苯基二甲氧基矽烷、（3-甲基氧環丁烷-3-基）甲基 苯基二乙氧基矽烷、（3 -甲基氧環丁烷-3 -基）甲基苯基 —- η-丙氧基砂院、（3 -甲基氧環丁院-3-基）甲基苯基一.-i-丙氧基矽烷、（3-甲基氧環丁烷-3-基）甲基苯基二乙醯 氧基矽烷、（3-甲基氧環丁烷-3-基）乙基三甲氧基矽烷、 (3 -甲基氧環丁烷-3-基）乙基三乙氧基矽烷、（3 -甲基氧 環丁烷-3-基）乙基三-η-丙氧基矽烷、（3-甲基氧環丁烷-3-基）乙基三-i-丙氧基矽烷、（3-甲基氧環丁烷-3-基）乙 基三乙醯氧基矽烷、（3 -甲基氧環丁烷-3-基）乙基甲基二 甲氧基矽烷、（3-甲基氧環丁烷-3-基）乙基甲基二乙氧基 矽烷、（3 -甲基氧環丁烷-3-基）乙基甲基二-η-丙氧基矽 烷、（3-甲基氧環丁烷-3-基）乙基甲基二-i-丙氧基矽烷、 (3-甲基氧環丁烷-3-基）乙基甲基二乙醯氧基矽烷、（3-甲基氧環丁烷-3-基）乙基乙基二甲氧基矽烷、（3-甲基氧 環丁烷-3 -基）乙基乙基二乙氧基矽烷、（3 -甲基氧環丁 烷-3-基）乙基乙基二- η-丙氧基矽烷、（3-甲基氧環丁烷-3-基）乙基乙基二-i-丙氧基矽烷、（3-甲基氧環丁烷-3-基 )乙基乙基二乙醯氧基矽烷、（3-甲基氧環丁烷-3-基）乙 基苯基二甲氧基矽烷、（3 -甲基氧環丁烷-3 -基）乙基苯基 二乙氧基矽烷、（3 -甲基氧環丁烷-3-基）乙基苯基二-n- -34- 200903154 丙氧基矽烷、（3-甲基氧環丁烷-3-基）乙基苯基二-i-丙氧 基矽烷、（3 -甲基氧環丁烷-3 -基）乙基苯基二乙醯氧基矽 烷、（3-甲基氧環丁烷_3_基）丙基三甲氧基矽烷、（3-甲 基氧環丁烷-3 -基）丙基三乙氧基矽烷、（3 -甲基氧環丁 烷-3-基）丙基三-η-丙氧基矽烷、（3-甲基氧環丁烷-3-基 )丙基三-i-丙氧基矽烷、（3-甲基氧環丁烷-3-基）丙基三 乙醯氧基矽烷、（3-甲基氧環丁烷-3-基）丙基甲基二甲氧 基矽烷、（3 -甲基氧環丁烷-3-基）丙基甲基二乙氧基矽烷 、（3 -甲基氧環丁烷-3-基）丙基甲基二-η-丙氧基矽烷、 (3-甲基氧環丁烷-3-基）丙基甲基二-i-丙氧基矽烷、（3-甲基氧環丁烷-3-基）丙基甲基二乙醯氧基矽烷、（3-甲基 氧環丁烷-3 -基）丙基乙基二甲氧基矽烷、（3 -甲基氧環丁 烷-3 -基）丙基乙基二乙氧基矽烷、（3 -甲基氧環丁烷-3-基）丙基乙基二-η-丙氧基矽烷、（3 -甲基氧環丁烷-3-基 )丙基乙基二-i-丙氧基矽烷、（3-甲基氧環丁烷-3-基）丙 基乙基二乙醯氧基矽烷、（3-甲基氧環丁烷-3-基）丙基苯 基二甲氧基矽烷、（3-甲基氧環丁烷-3-基）丙基苯基二乙 氧基矽烷、（3-甲基氧環丁烷-3-基）丙基苯基二-η-丙氧 基矽烷、（3-甲基氧環丁烷-3-基）丙基苯基二-i-丙氧基矽 烷、（3-甲基氧環丁烷-3-基）丙基苯基二乙醯氧基矽烷、 (3-乙基氧環丁烷-3-基）甲基三甲氧基矽烷、（3-乙基氧 環丁烷-3 -基）甲基三乙氧基矽烷、（3 -乙基氧環丁烷-3 -基）甲基三-η-丙氧基矽烷、（3-乙基氧環丁烷-3-基）甲 基三-i-丙氧基矽烷、（3-乙基氧環丁烷-3-基）甲基三乙醯 -35- 200903154 氧基矽烷、（3-乙基氧環丁烷-3-基）甲基甲基二甲氧基矽 烷、（3-乙基氧環丁烷-3-基）甲基甲基二乙氧基矽烷、（ 3-乙基氧環丁烷-3-基）甲基甲基二-η-丙氧基矽烷、（3-乙基氧環丁烷-3-基）甲基甲基二-i-丙氧基矽烷、（3-乙基 氧環丁烷-3-基）甲基甲基二乙醯氧基矽烷、（3-乙基氧環 丁烷-3 -基）甲基乙基二甲氧基矽烷、（3 -乙基氧環丁烷-3 -基）甲基乙基二乙氧基矽烷、（3 -乙基氧環丁烷-3 -基） 甲基乙基二- η-丙氧基矽烷、（3-乙基氧環丁烷-3-基）甲 基乙基二-i-丙氧基矽烷、（3 -乙基氧環丁烷-3-基）甲基乙 基二乙醯氧基矽烷、（3 -乙基氧環丁烷-3-基）甲基苯基二 甲氧基矽烷、（3-乙基氧環丁烷-3-基）甲基苯基二乙氧基 矽烷、（3-乙基氧環丁烷-3-基）甲基苯基二-η-丙氧基矽 烷、（3-乙基氧環丁烷-3-基）甲基苯基二-i-丙氧基矽烷、 (3-乙基氧環丁烷-3_基）甲基苯基二乙醯氧基矽烷、（3-乙基氧環丁烷-3-基）乙基三甲氧基矽烷、（3-乙基氧環丁 烷-3-基）乙基三乙氧基矽烷、（3 -乙基氧環丁烷-3-基） 乙基三-η -丙氧基矽烷、（3 -乙基氧環丁烷-3 -基）乙基三-i-丙氧基矽烷、（3-乙基氧環丁烷-3-基）乙基三乙醯氧基 矽烷、（3-乙基氧環丁烷-3-基）乙基甲基二甲氧基矽烷、 (3-乙基氧環丁烷-3-基）乙基甲基二乙氧基矽烷、（3-乙 基氧環丁烷-3-基）乙基甲基二-n_丙氧基矽烷、（3-乙基 氧環丁烷-3-基）乙基甲基二-i_丙氧基矽烷、（3-乙基氧環 丁烷-3-基）乙基甲基二乙醯氧基矽烷、（3 -乙基氧環丁 烷-3-基）乙基乙基二甲氧基矽烷、（3 -乙基氧環丁烷-3- -36- 200903154 基）乙基乙基二乙氧基矽烷、（3-乙基氧環丁烷-3-基）乙 基乙基二- η-丙氧基矽烷、（3-乙基氧環丁烷-3-基）乙基 乙基二-i-丙氧基矽烷、（3-乙基氧環丁烷-3-基）乙基乙基 二乙醯氧基矽烷、（3-乙基氧環丁烷-3-基）乙基苯基二甲 氧基矽烷、（3-乙基氧環丁烷-3-基）乙基苯基二乙氧基矽 烷、（3-乙基氧環丁烷-3-基）乙基苯基二-η-丙氧基矽烷 、（3-乙基氧環丁烷-3-基）乙基苯基二-i-丙氧基矽烷、（ 3-乙基氧環丁烷-3-基）乙基苯基二乙醯氧基矽烷、（3-乙 基氧環丁烷-3 -基）丙基三甲氧基矽烷、（3 -乙基氧環丁 烷-3-基）丙基三乙氧基矽烷、（3 -乙基氧環丁烷-3-基） 丙基三- η-丙氧基矽烷、（3-乙基氧環丁烷-3-基）丙基三-i-丙氧基矽烷、（3-乙基氧環丁烷-3-基）丙基三乙醯氧基 矽烷、（3 -乙基氧環丁烷-3 -基）丙基甲基二甲氧基矽烷、 (3 -乙基氧環丁烷-3 -基）丙基甲基二乙氧基矽烷、（3 -乙 基氧環丁烷-3-基）丙基甲基二-η-丙氧基矽烷、（3-乙基 氧環丁烷-3-基）丙基甲基二-i-丙氧基矽烷、（3-乙基氧環 丁烷-3 -基）丙基甲基二乙醯氧基矽烷、（3 -乙基氧環丁 烷-3-基）丙基乙基二甲氧基矽烷、（3 -乙基氧環丁烷-3-基）丙基乙基二乙氧基矽烷、（3-乙基氧環丁烷-3-基）丙 基乙基二-η-丙氧基矽烷、（3-乙基氧環丁烷-3-基）丙基 乙基二-i-丙氧基矽烷、（3-乙基氧環丁烷-3-基）丙基乙基 二乙醯氧基矽烷、（3 -乙基氧環丁烷-3-基）丙基苯基二甲 氧基矽烷、（3-乙基氧環丁烷-3-基）丙基苯基二乙氧基矽 烷、（3-乙基氧環丁烷-3-基）丙基苯基二- η-丙氧基矽烷 -37- 200903154 、（3-乙基氧環丁烷-3-基）丙基苯基二-i_丙氧基矽烷、（ 3 -乙基氧環丁院-3-基）丙基苯基二乙醯氧基矽院等； 含有乙烯基之化合物（1 )之具體例’例如有乙烯基 三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三-η —丙氧基 矽烷、乙烯基三-i-丙氧基矽烷、乙烯基三乙醯氧基矽烷、 乙烯基三（甲氧基乙氧基）矽烷、乙稀基甲基二甲氧基矽 烷、乙烯基甲基二乙氧基矽烷、乙烯基甲基二_n_丙氧基矽 院、乙烧基甲基二丙氧基砂院、乙稀基甲基二乙薩氧基 矽烷、乙烯基乙基二甲氧基矽烷、乙烯基乙基二乙氧基矽 烷、乙烯基乙基二-η -丙氧基矽烷、乙烯基乙基二-i -丙氧 基矽烷、乙烯基乙基二乙醯氧基矽烷、乙烯基乙基二（甲 氧基乙氧基）矽烷、乙烯基苯基二甲氧基矽烷、乙烯基苯 基二乙氧基矽烷、乙烯基苯基二-η -丙氧基矽烷、乙烯基苯 基二-i -丙氧基砂院、乙嫌基苯基二乙酿氧基砂垸、乙稀基 苯基二（甲氧基乙氧基）砂院等； 含有烯丙基之化合物（1 )之具體例’例如有烯丙基 三甲氧基矽烷、烯丙基三乙氧基矽烷、烯丙基三_n-丙氧基 砂院、烯丙基三-i-丙氧基矽烷、烯丙基三乙酿氧基矽烷、 烯丙基三（甲氧基乙氧基）矽烷、烯丙基甲基二甲氧基矽 烷、烯丙基甲基二乙氧基矽烷、烯丙基甲基二丙氧基矽 烷、烯丙基甲基二-i-丙氧基矽烷、烯丙基甲基二乙醯氧基 矽烷、烯丙基乙基二甲氧基矽烷、烯丙基乙基二乙氧基矽 烷、烯丙基乙基 基矽烷、烯两基 二-η -丙氧基矽烷、烯丙基乙基一-i -丙氧 乙基二乙醯氧基矽烷、烯丙基乙基二（甲 -38- 200903154 氧基乙氧基）矽烷、烯丙基苯基二甲氧基矽烷、烯丙基苯 基二乙氧基矽烷、烯丙基苯基二-η-丙氧基矽烷、烯丙基苯 基二-i-丙氧基矽烷、烯丙基苯基二乙醯氧基矽烷、烯丙基 苯基—(甲氧基乙氧基）Ϊ夕院等； 含有（甲基）丙烯醯基之化合物（1)之具體例有3-(甲基）丙烯醯氧基甲基三甲氧基矽烷、3-(甲基）丙烯 醯氧基甲基三乙氧基矽烷、3-(甲基）丙烯醯氧基甲基三-n-丙氧基矽烷、3-(甲基）丙烯醯氧基甲基三-i-丙氧基矽 烷、3-(甲基）丙烯醯氧基甲基三乙醯氧基矽烷、3-(甲 基）丙烯醯氧基甲基甲基二甲氧基矽烷、3-(甲基）丙烯 醯氧基甲基甲基二乙氧基矽烷、3-(甲基）丙烯醯氧基甲 基甲基二-η-丙氧基矽烷、3-(甲基）丙烯醯氧基甲基甲基 二-i-丙氧基矽烷、3-(甲基）丙烯醯氧基甲基甲基二乙醯 氧基矽烷、3-(甲基）丙烯醯氧基甲基乙基二甲氧基矽烷 、3-(甲基）丙烯醯氧基甲基乙基二乙氧基矽烷、3-(甲 基）丙烯醯氧基甲基乙基二-η-丙氧基矽烷、3-(甲基）丙 烯醯氧基甲基乙基二-i-丙氧基矽烷、3-(甲基）丙烯醯氧 基甲基乙基二乙醯氧基矽烷、3-(甲基）丙烯醯氧基甲基 苯基二甲氧基矽烷、3-(甲基）丙烯醯氧基甲基苯基二乙 氧基矽烷、3-(甲基）丙烯醯氧基甲基苯基二-!1_丙氧基矽 烷、3-(甲基）丙烯醯氧基甲基苯基二-i-丙氧基矽烷、3-(甲基）丙烯醯氧基甲基苯基二乙醯氧基矽烷、3-(甲基 )丙烯醯氧基乙基三甲氧基矽烷、3-(甲基）丙烯醯氧基 乙基三乙氧基矽烷、3-(甲基）丙烯醯氧基乙基三-η-丙氧 -39- 200903154 基矽烷、3 -(甲基）丙烯醯氧基乙基三-i-丙氧基矽烷、3-(甲基）丙烯醯氧基乙基三乙醯氧基矽烷、3-(甲基）丙 烯醯氧基乙基甲基二甲氧基矽烷、3-(甲基）丙烯醯氧基 乙基甲基二乙氧基矽烷、3-(甲基）丙烯醯氧基乙基甲基 二- η-丙氧基矽烷、3 -(甲基）丙烯醯氧基乙基甲基二-i-丙 氧基矽烷、3-(甲基）丙烯醯氧基乙基甲基二乙醯氧基矽 烷、3-(甲基）丙烯醯氧基乙基乙基二甲氧基矽烷、3-( 甲基）丙烯醯氧基乙基乙基二乙氧基矽烷、3-(甲基）丙 烯醯氧基乙基乙基二-η-丙氧基矽烷、3-(甲基）丙烯醯氧 基乙基乙基二-i-丙氧基矽烷、3-(甲基）丙烯醯氧基乙基 乙基二乙醯氧基矽烷、3-(甲基）丙烯醯氧基乙基苯基二 甲氧基矽烷、3-(甲基）丙烯醯氧基乙基苯基二乙氧基矽 烷、3-(甲基）丙烯醯氧基乙基苯基二-η-丙氧基矽烷、3-(甲基）丙烯醯氧基乙基苯基二-i-丙氧基矽烷、3-(甲基 )丙烯醯氧基乙基苯基二乙醯氧基矽烷、3-(甲基）丙烯 醯氧基丙基三甲氧基矽烷、3-(甲基）丙烯醯氧基丙基三 乙氧基矽烷、3-(甲基）丙烯醯氧基丙基三-η-丙氧基矽烷 、3-(甲基）丙烯醯氧基丙基三-i-丙氧基矽烷、3-(甲基 )丙烯醯氧基丙基三乙醯氧基矽烷、3-(甲基）丙烯醯氧 基丙基甲基二甲氧基矽烷、3-(甲基）丙烯醯氧基丙基甲 基二乙氧基矽烷、3-(甲基）丙烯醯氧基丙基甲基二- η-丙 氧基矽烷、3-(甲基）丙烯醯氧基丙基甲基二-i-丙氧基矽 烷、3-(甲基）丙烯醯氧基丙基甲基二乙醯氧基矽烷、3-(甲基）丙烯醯氧基丙基乙基二甲氧基矽烷' 3-(甲基） -40- 200903154 丙烯醯氧基丙基乙基二乙氧基矽烷、3-(甲基）丙烯醯氧 基丙基乙基二-η-丙氧基矽烷、3-(甲基）丙烯醯氧基丙基 乙基二-i-丙氧基矽烷、3-(甲基）丙烯醯氧基丙基乙基二 乙醯氧基矽烷、3-(甲基）丙烯醯氧基丙基苯基二甲氧基 矽烷、3-(甲基）丙烯醯氧基丙基苯基二乙氧基矽烷、3-(甲基）丙烯醯氧基丙基苯基二-η-丙氧基矽烷、3-(甲基 )丙烯醯氧基丙基苯基二-i-丙氧基矽烷、3-(甲基）丙烯 醯氧基丙基苯基二乙醯氧基矽烷等； 含有羧基之化合物（1 )之具體例，例如有羧甲基三 甲氧基矽烷、羧甲基三乙氧基矽烷、羧甲基三-η-丙氧基矽 烷、羧甲基三-i-丙氧基矽烷、羧甲基三乙醯氧基矽烷、羧 甲基三（甲氧基乙氧基）矽烷、羧甲基甲基二甲氧基矽烷 、羧甲基甲基二乙氧基矽烷、羧甲基甲基二-η-丙氧基矽烷 、羧甲基甲基二-i-丙氧基矽烷、羧甲基甲基二乙醯氧基矽 烷、羧甲基乙基二甲氧基矽烷、羧甲基乙基二乙氧基矽烷 、羧甲基乙基二-η-丙氧基矽烷、羧甲基乙基二-i-丙氧基 矽烷、羧甲基乙基二乙醯氧基矽烷、羧甲基乙基二（甲氧 基乙氧基）矽烷、羧甲基苯基二甲氧基矽烷、羧甲基苯基 二乙氧基矽烷、羧甲基苯基二-η-丙氧基矽烷、羧甲基苯基 二-i-丙氧基矽烷、羧甲基苯基二乙醯氧基矽烷、羧甲基苯 基二（甲氧基乙氧基）矽烷、2 -羧乙基三甲氧基矽烷、2-羧乙基三乙氧基矽烷、2 -羧乙基三-η -丙氧基矽烷、2 -羧乙 基三-i-丙氧基矽烷、2 -羧乙基三乙醯氧基矽烷、2 -羧乙基 三（甲氧基乙氧基）矽烷、2 -羧乙基甲基二甲氧基矽烷、 -41 - 200903154 2-羧乙基甲基二乙氧基矽烷、2-羧乙基甲基二-η-丙氧基矽 烷、2-羧乙基甲基二-i-丙氧基矽烷、2-羧乙基甲基二乙醯 氧基矽烷、2 -羧乙基乙基二甲氧基矽烷、2 -羧乙基乙基二 乙氧基矽烷、2-羧乙基乙基二-η-丙氧基矽烷、2-羧乙基乙 基二丙氧基矽烷、2 -羧乙基乙基二乙醯氧基矽烷、2 -羧 乙基乙基二（甲氧基乙氧基）矽烷、2 -羧乙基苯基二甲氧 基矽烷、2-羧乙基苯基二乙氧基矽烷、2-羧乙基苯基二-η-丙氧基矽烷、2-羧乙基苯基二-i-丙氧基矽烷、2-羧乙基苯 基二乙醯氧基矽烷、2 -羧乙基苯基二（甲氧基乙氧基）矽 烷等； 含有羥基之化合物（1 )之具體例，例如有羥甲基三 甲氧基矽烷、羥甲基三乙氧基矽烷、羥甲基三-η-丙氧基矽 烷、羥甲基三-i-丙氧基矽烷、羥甲基三乙醯氧基矽烷、羥 甲基三（甲氧基乙氧基）矽烷、羥甲基甲基二甲氧基矽烷 、羥甲基甲基二乙氧基矽烷、羥甲基甲基二-η-丙氧基矽烷 、羥甲基甲基二-i-丙氧基矽烷、羥甲基甲基二乙醯氧基矽 烷、羥甲基乙基二甲氧基矽烷、羥甲基乙基二乙氧基矽烷 、羥甲基乙基二-η-丙氧基矽烷、羥甲基乙基二-i-丙氧基 矽烷、羥甲基乙基二乙醯氧基矽烷、羥甲基乙基二（甲氧 基乙氧基）矽烷、羥甲基苯基二甲氧基矽烷、羥甲基苯基 二乙氧基矽烷、羥甲基苯基二-η-丙氧基矽烷、羥甲基苯基 二-i-丙氧基矽烷、羥甲基苯基二乙醯氧基矽烷、羥甲基苯 基二（甲氧基乙氧基）矽烷、2 -羥乙基三甲氧基矽烷、2-羥乙基三乙氧基矽烷、2-羥乙基三-η-丙氧基矽烷、2•羥乙 -42 - 200903154 基三-i-丙氧基矽烷、2-羥乙基三乙醯氧基矽烷、2-羥乙基 三（甲氧基乙氧基）矽烷、2 -羥乙基甲基二甲氧基矽烷、 2-羥乙基甲基二乙氧基矽烷、2-羥乙基甲基二-η-丙氧基矽 烷、2-羥乙基甲基二-i-丙氧基矽烷、2-羥乙基甲基二乙醯 氧基矽烷、2-羥乙基乙基二甲氧基矽烷、2-羥乙基乙基二 乙氧基矽烷、2-羥乙基乙基二-η-丙氧基矽烷、2-羥乙基乙 基二-i-丙氧基矽烷、2-羥乙基乙基二乙醯氧基矽烷、2-羥 乙基乙基二（甲氧基乙氧基）矽烷、2-羥乙基苯基二甲氧 基矽烷、2 -羥乙基苯基二乙氧基矽烷、2 -羥乙基苯基二- n-丙氧基矽烷、2-羥乙基苯基二-i-丙氧基矽烷、2-羥乙基苯 基二乙醯氧基矽烷、2 -羥乙基苯基二（甲氧基乙氧基）矽 烷、3 -羥丙基三甲氧基矽烷、3 -羥丙基三乙氧基矽烷、3 -羥丙基三-η-丙氧基矽烷、3-羥丙基三-i-丙氧基矽烷、3-羥 丙基三乙醯氧基矽烷、3 -羥丙基三（甲氧基乙氧基）矽烷 、3 -羥丙基甲基二甲氧基矽烷、3 -羥丙基甲基二乙氧基矽 烷、3-羥丙基甲基二-η-丙氧基矽烷、3-羥丙基甲基二-i-丙 氧基矽烷、3 -羥丙基甲基二乙醯氧基矽烷、3 -羥丙基乙基 二甲氧基矽烷、3 -羥丙基乙基二乙氧基矽烷、3 -羥丙基乙 基二-η-丙氧基矽烷、3-羥丙基乙基二-i-丙氧基矽烷、3-羥 丙基乙基二乙醯氧基矽烷、3 -羥丙基乙基二（甲氧基乙氧 基）矽烷、3 -羥丙基苯基二甲氧基矽烷、3 -羥丙基苯基二 乙氧基矽烷、3-羥丙基苯基二-η-丙氧基矽烷、3-羥丙基苯 基二-i-丙氧基矽烷、3-羥丙基苯基二乙醯氧基矽烷、3-羥 丙基苯基二（甲氧基乙氧基）矽烷、4-羥基-(p-羥苯基羰 -43 - 200903154 氧基）苄基三甲氧基矽烷、4-羥基-(p-羥苯基羰氧基）苄 基三乙氧基矽烷、4·羥基-(P-羥苯基羰氧基）苄基三-n-丙氧基矽烷、4-羥基-(p-羥苯基羰氧基）苄基三-i-丙氧基 矽烷、4-羥基-(p-羥苯基羰氧基）苄基三乙醯氧基矽烷、 4-羥基-(p-羥苯基羰氧基）苄基三（甲氧基乙氧基）矽烷 、4-羥基-(p-羥苯基羰氧基）苄基甲基二甲氧基矽烷、4-羥基-(P-羥苯基羰氧基）苄基甲基二乙氧基矽烷、4-羥 基-(P-羥苯基羰氧基）苄基甲基二-η-丙氧基矽烷、4-羥 基-(Ρ-羥苯基羰氧基）苄基甲基二-i-丙氧基矽烷、4-羥 基-(P-羥苯基羰氧基）苄基甲基二乙醯氧基矽烷、4-羥 基-(P-羥苯基羰氧基）苄基乙基二甲氧基矽烷、4-羥基-(P-羥苯基羰氧基）苄基乙基二乙氧基矽烷、4-羥基-(p-羥苯基羰氧基）苄基乙基二-η-丙氧基矽烷、4-羥基-(p-羥苯基羰氧基）苄基乙基二-i-丙氧基矽烷、4-羥基-(ρ-羥 苯基羰氧基）苄基乙基二乙醯氧基矽烷、4-羥基-(ρ-羥苯 基羰氧基）苄基乙基二（甲氧基乙氧基）矽烷、4_羥基-( P-羥苯基羰氧基）苄基苯基二甲氧基矽烷、4-羥基-(ρ-羥 本基每氧基）卞基本基一乙氧基砂院、4 -經基- (ρ -經苯基 羰氧基）苄基苯基二-η-丙氧基矽烷、4-羥基-(ρ-羥苯基 羯氧基）卞基苯基一-丙氧基砂院、4-經基-(ρ-經苯基簾 氧基）苄基苯基二乙醯氧基矽烷、4-羥基-(ρ-羥苯基羰氧 基）苄基苯基二（甲氧基乙氧基）矽烷等； 含有氫硫基之化合物（1 )之具體例，例如有氫硫基 甲基三甲氧基矽烷、氫硫基甲基三乙氧基矽烷、氫硫基甲 -44 - 200903154 基三-η-丙氧基矽烷、氫硫基甲基三-i-丙氧基矽烷、氫硫 基甲基三乙醯氧基矽烷、氫硫基甲基三（甲氧基乙氧基） 矽烷、氫硫基甲基甲基二甲氧基矽烷、氫硫基甲基甲基二 乙氧基矽烷、氫硫基甲基甲基二-η-丙氧基矽烷、氫硫基甲 基甲基二-i-丙氧基矽烷、氫硫基甲基甲基二乙醯氧基矽烷 、氫硫基甲基乙基二甲氧基矽烷、氫硫基甲基乙基二乙氧 基砂院、氣硫基甲基乙基—-n-丙氧基砂院、氣硫基甲基乙 基二-i-丙氧基矽烷、氫硫基甲基乙基二乙醯氧基矽烷、氫 硫基甲基乙基—(甲氧基乙氧基）5夕院、氣硫基甲基本基 二甲氧基矽烷、氫硫基甲基苯基二乙氧基矽烷、氫硫基甲 基苯基二-η-丙氧基矽烷、氫硫基甲基苯基二-i-丙氧基矽 烷、氫硫基甲基苯基二乙醯氧基矽烷、氫硫基甲基苯基二 (甲氧基乙氧基）矽烷、2-氫硫基乙基三甲氧基矽烷、2-氫硫基乙基三乙氧基矽烷、2-氫硫基乙基三-n_丙氧基矽烷 、2 -氫硫基乙基三-i-丙氧基矽烷、2 -氫硫基乙基三乙醯氧 基矽烷、2-氫硫基乙基三（甲氧基乙氧基）矽烷、2•氫硫 基乙基甲基二甲氧基矽烷、2 -氫硫基乙基甲基二乙氧基矽 烷、2-氫硫基乙基甲基二-η-丙氧基矽烷、2-氫硫基乙基甲 基_>-i -丙氧基石夕院、2-氣硫基乙基甲基__乙酸氧基砂院、 2 -氫硫基乙基乙基二甲氧基矽烷、2 -氫硫基乙基乙基二乙 氧基砂院、2 -氣硫基乙基乙基_丙氧基砂院、2 -氨硫基 乙基乙基二-i-丙氧基矽烷、2-氫硫基乙基乙基二乙醯氧基 矽烷、2-氫硫基乙基乙基二（甲氧基乙氧基）矽烷、2-氫 硫基乙基苯基—甲氧基砂院、2 -氯硫基乙基苯基_乙氧基 -45 - 200903154 矽烷、2-氫硫基乙基苯基二-n_丙氧基矽烷、2-氫硫基乙基 苯基二-i-丙氧基矽烷、2 -氫硫基乙基苯基二乙醯氧基矽烷 、2 -氨硫基乙基本基一(甲氣基乙氧基）砂院、3 -氣硫基 丙基三甲氧基矽烷、3 -氫硫基丙基三乙氧基矽烷、3 -氫硫 基丙基三-η-丙氧基矽烷、3·氫硫基丙基三-i-丙氧基矽烷、 3 -氫硫基丙基三乙醯氧基矽烷、3 -氫硫基丙基三（甲氧基 乙氧基）矽烷、3 -氫硫基丙基甲基二甲氧基矽烷、3 -氫硫 基丙基甲基二乙氧基矽烷、3-氫硫基丙基甲基二-η-丙氧基 矽烷、3-氫硫基丙基甲基二-i-丙氧基矽烷、3-氫硫基丙基 甲基二乙醯氧基矽烷、3 -氫硫基丙基乙基二甲氧基矽烷、 3 -氣硫基丙基乙基—乙氧基砂院、3 -氣硫基丙基乙基__ - η -丙氧基矽烷、3-氫硫基丙基乙基二-i-丙氧基矽烷、3-氫硫 基丙基乙基二乙醯氧基矽烷、3 -氫硫基丙基乙基二（甲氧 基乙氧基）矽烷、3 -氫硫基丙基苯基二甲氧基矽烷、3 -氫 硫基丙基苯基二乙氧基矽烷、3-氫硫基丙基苯基二-η-丙氧 基矽烷、3-氫硫基丙基苯基二-i-丙氧基矽烷、3-氫硫基丙 基本基—乙酸氧基砂院、3 -氣硫基丙基苯基_(甲氧基乙 氧基）矽烷等； 含有異氰酸酯基之化合物（1 )之具體例，例如有異 氰酸酯甲基三甲氧基矽烷、異氰酸酯甲基三乙氧基矽烷、 異氰酸酯甲基三-η-丙氧基矽烷、異氰酸酯甲基三-i-丙氧 基矽烷、異氰酸酯甲基三乙醯氧基矽烷、異氰酸酯甲基三 (甲氧基乙氧基）矽烷、異氰酸酯甲基甲基二甲氧基矽烷 、異氰酸酯甲基甲基二乙氧基矽烷、異氰酸酯甲基甲基 -46 - 200903154 二-η-丙氧基矽烷、異氰酸酯甲基甲基二-i-丙氧基矽烷、 異氰酸酯甲基甲基二乙醯氧基矽烷、異氰酸酯甲基乙基二 甲氧基矽烷、異氰酸酯甲基乙基二乙氧基矽烷、異氰酸酯 甲基乙基二-η-丙氧基矽烷、異氰酸酯甲基乙基二-i-丙氧 基矽烷、異氰酸酯甲基乙基二乙醯氧基矽烷、異氰酸酯甲 基乙基二（甲氧基乙氧基）矽烷、異氰酸酯甲基苯基二甲 氧基矽烷、異氰酸酯甲基苯基二乙氧基矽烷、異氰酸酯甲 基苯基二-η-丙氧基矽烷、異氰酸酯甲基苯基二-i-丙氧基 矽烷、異氰酸酯甲基苯基二乙醯氧基矽烷、異氰酸酯甲基 苯基二（甲氧基乙氧基）矽烷、2 -異氰酸酯乙基三甲氧基 矽烷、2-異氰酸酯乙基三乙氧基矽烷、2-異氰酸酯乙基三-n-丙氧基矽烷、2-異氰酸酯乙基三-i-丙氧基矽烷、2-異氰 酸酯乙基三乙醯氧基矽烷、2 -異氰酸酯乙基三（甲氧基乙 氧基）矽烷、2 -異氰酸酯乙基甲基二甲氧基矽烷、2 -異氰 酸酯乙基甲基二乙氧基矽烷、2-異氰酸酯乙基甲基二-η-丙 氧基矽烷、2-異氰酸酯乙基甲基二-i-丙氧基矽烷、2-異氰 酸酯乙基甲基二乙醯氧基矽烷、2 -異氰酸酯乙基乙基二甲 氧基矽烷、2-異氰酸酯乙基乙基二乙氧基矽烷、2-異氰酸 酯乙基乙基二-η-丙氧基矽烷、2-異氰酸酯乙基乙基二-i-丙 氧基矽烷、2 -異氰酸酯乙基乙基二乙醯氧基矽烷、2 -異氰 酸酯乙基乙基二（甲氧基乙氧基）矽烷、2 -異氰酸酯乙基 苯基二甲氧基矽烷、2 -異氰酸酯乙基苯基二乙氧基矽烷、 2-異氰酸酯乙基苯基二-η-丙氧基矽烷、2-異氰酸酯乙基苯 基二-i-丙氧基矽烷、2-異氰酸酯乙基苯基二乙醯氧基矽烷 -47 - 200903154 、2 -異氰酸酯乙基苯基二（甲氧基乙氧基）矽烷、3 -異氰 酸酯丙基三甲氧基矽烷、3 -異氰酸酯丙基三乙氧基矽烷、 3-異氰酸酯丙基三-η-丙氧基矽烷、3-異氰酸酯丙基三-i-丙 氧基矽烷、3 -異氰酸酯丙基三乙醯氧基矽烷、3 -異氰酸酯 丙基三（甲氧基乙氧基）矽烷、3 -異氰酸酯丙基甲基二甲 氧基矽烷、3 -異氰酸酯丙基甲基二乙氧基矽烷、3 -異氰酸 酯丙基甲基二-η-丙氧基矽烷、3-異氰酸酯丙基甲基二-i-丙 氧基矽烷、3 -異氰酸酯丙基甲基二乙醯氧基矽烷、3 -異氰 酸酯丙基乙基二甲氧基矽烷、3 -異氰酸酯丙基乙基二乙氧 基矽烷、3-異氰酸酯丙基乙基二-η-丙氧基矽烷、3-異氰酸 酯丙基乙基二-i-丙氧基矽烷、3-異氰酸酯丙基乙基二乙醯 氧基矽烷、3 -異氰酸酯丙基乙基二（甲氧基乙氧基）矽烷 、3 -異氰酸酯丙基苯基二甲氧基矽烷、3 -異氰酸酯丙基苯 基二乙氧基矽烷、3-異氰酸酯丙基苯基二-η-丙氧基矽烷、 3-異氰酸酯丙基苯基二-i-丙氧基矽烷、3-異氰酸酯丙基苯 基二乙醯氧基矽烷、3 -異氰酸酯丙基苯基二（甲氧基乙氧 基）矽烷等； 含有胺基之化合物（1 )之具體例，例如有胺基甲基 三甲氧基矽烷、胺基甲基三乙氧基矽烷、胺基甲基三-η-丙 氧基矽烷、胺基甲基三-i-丙氧基矽烷、胺基甲基三乙醯氧 基矽烷、胺基甲基三（甲氧基乙氧基）矽烷、胺基甲基甲 基二甲氧基矽烷、胺基甲基甲基二乙氧基矽烷、胺基甲基 甲基二-η-丙氧基矽烷、胺基甲基甲基二-i-丙氧基矽烷、 胺基甲基甲基二乙醯氧基矽烷、胺基甲基乙基二甲氧基矽 -48 - 200903154 烷、胺基甲基乙基二乙氧基矽烷、胺基甲基乙基二-η-丙氧 基矽烷、胺基甲基乙基二-i-丙氧基矽烷、胺基甲基乙基二 乙醯氧基矽烷、胺基甲基乙基二（甲氧基乙氧基）矽烷、 胺基甲基苯基二甲氧基矽烷、胺基甲基苯基二乙氧基矽烷 、胺基甲基苯基二-η-丙氧基矽烷、胺基甲基苯基二-i-丙 氧基矽烷、胺基甲基苯基二乙醯氧基矽烷、胺基甲基苯基 二（甲氧基乙氧基）矽烷、2 -胺基乙基三甲氧基矽烷、2-胺基乙基三乙氧基矽烷、2-胺基乙基三-η-丙氧基矽烷、2-胺基乙基三-i-丙氧基矽烷、2-胺基乙基三乙醯氧基矽烷、 2-胺基乙基三（甲氧基乙氧基）矽烷、2-胺基乙基甲基二 甲氧基砂院、2 -胺基乙基甲基_•乙氣基砂院、2 -胺基乙基 甲基二-η-丙氧基矽烷、2-胺基乙基甲基二-i-丙氧基矽烷、 2-胺基乙基甲基二乙醯氧基矽烷、2-胺基乙基乙基二甲氧 基矽烷、2 -胺基乙基乙基二乙氧基矽烷、2 -胺基乙基乙基 二-η-丙氧基矽烷、2-胺基乙基乙基二-i-丙氧基矽烷、2-胺 基乙基乙基二乙醯氧基矽烷、2 -胺基乙基乙基二（甲氧基 乙氧基）矽烷、2-胺基乙基苯基二甲氧基矽烷、2-胺基乙 基苯基二乙氧基矽烷、2 -胺基乙基苯基二-η -丙氧基矽烷、 2 -胺基乙基苯基—>-i -丙氧基ί夕院、2 -胺基乙基苯基_乙釀 氧基矽烷、2 -胺基乙基苯基二（甲氧基乙氧基）矽烷、3 -胺基丙基三甲氧基矽烷、3 -胺基丙基三乙氧基矽烷、3 -胺 基丙基三-η-丙氧基矽烷、3-胺基丙基三-i-丙氧基矽烷、3-胺基丙基三乙醯氧基矽烷、3-胺基丙基三（甲氧基乙氧基 )矽烷、3 -胺基丙基甲基二甲氧基矽烷、3 -胺基丙基甲基 -49- 200903154 二乙氧基矽烷、3-胺基丙基甲基二-η-丙氧基矽烷、3-胺基 丙基甲基二-i-丙氧基矽烷、3-胺基丙基甲基二乙醯氧基矽 烷、3 -胺基丙基乙基二甲氧基矽烷、3 -胺基丙基乙基二乙 氧基矽烷、3-胺基丙基乙基二-η-丙氧基矽烷、3-胺基丙基 乙基二-i-丙氧基矽烷、3-胺基丙基乙基二乙醯氧基矽烷、 3-胺基丙基乙基二（甲氧基乙氧基）矽烷、3-胺基丙基苯 基二甲氧基矽烷、3-胺基丙基苯基二乙氧基矽烷、3-胺基 丙基苯基二-η-丙氧基矽烷、3-胺基丙基苯基二-i-丙氧基矽 烷、3 -胺基丙基苯基二乙醯氧基矽烷、3 -胺基丙基苯基二 (甲氧基乙氧基）矽烷、N-2-(胺基乙基）-3-胺基丙基三 甲氧基矽烷、N-2-(胺基乙基）-3-胺基丙基三乙氧基矽烷 、N-2-(胺基乙基）-3-胺基丙基三-η-丙氧基矽烷、N-2-(胺基乙基）-3-胺基丙基三-i-丙氧基矽烷、Ν-2-(胺基 乙基）-3 -胺基丙基三乙醯氧基矽烷、N-2-(胺基乙基）-3-胺基丙基三（甲氧基乙氧基）矽烷、N-2-(胺基乙基）-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基）-3 ·胺基 丙基甲基二乙氧基矽烷、N-2-(胺基乙基）-3-胺基丙基甲 基二-η-丙氧基矽烷、N-2-(胺基乙基）-3-胺基丙基甲基 二-i-丙氧基矽烷、Ν-2-(胺基乙基）-3-胺基丙基甲基二 乙醯氧基矽烷、N-2-(胺基乙基）-3-胺基丙基乙基二甲氧 基矽烷、N-2-(胺基乙基）-3-胺基丙基乙基二乙氧基矽烷 、N-2-(胺基乙基）-3 -胺基丙基乙基一丙氧基砂院、 N-2-(胺基乙基）-3-胺基丙基乙基二-i-丙氧基矽烷、N-2-(胺基乙基）-3-胺基丙基乙基二乙醯氧基矽烷、N-2-(胺 -50- 200903154 基乙基）_3_胺基丙基乙基二（甲氧基乙氧基）矽烷、N-2-(胺基乙基）-3-胺基丙基苯基二甲氧基矽烷、N-2-(胺基 乙基）-3 -胺基丙基苯基二乙氧基矽烷、N-2-(胺基乙基 )-3_胺基丙基苯基二-η-丙氧基矽烷、Ν·2-(胺基乙基）-3-胺基丙基苯基二-i-丙氧基矽烷、Ν-2-(胺基乙基）-3-胺 基丙基苯基二乙醯氧基矽烷、N-2-(胺基乙基）-3-胺基丙 基苯基二（甲氧基乙氧基）矽烷、N-苯基-3-胺基丙基三 甲氧基矽烷、N -苯基-3-胺基丙基三乙氧基矽烷、N-苯基-3-胺基丙基三-η-丙氧基矽烷、N-苯基-3-胺基丙基三-i-丙 氧基矽烷、N-苯基-3-胺基丙基三乙醯氧基矽烷、N-苯基-3-胺基丙基三（甲氧基乙氧基）矽烷、N-苯基-3-胺基丙基 甲基二甲氧基矽烷、N-苯基-3-胺基丙基甲基二乙氧基矽 烷、N-苯基-3-胺基丙基甲基二-η-丙氧基矽烷、N-苯基-3-胺基丙基甲基二-i-丙氧基矽烷、Ν-苯基-3-胺基丙基甲基 二乙醯氧基矽烷、N -苯基-3-胺基丙基乙基二甲氧基矽烷 、N-苯基-3-胺基丙基乙基_乙氧基砂院、N -苯基-3-胺基 丙基乙基—·_η -丙氧基砂垸、N -本基-3-胺基丙基乙基_. - i -丙氧基矽烷、N-苯基-3 -胺基丙基乙基二乙醯氧基矽烷、 N-苯基-3-胺基丙基乙基二（甲氧基乙氧基）矽烷、N-苯 基-3-胺基丙基苯基二甲氧基矽烷、N-苯基-3-胺基丙基苯 基二乙氧基矽烷、N-苯基-3-胺基丙基苯基二-η-丙氧基矽 烷、Ν -苯基-3 -胺基丙基苯基二-i-丙氧基矽烷、Ν -苯基- 3-胺基丙基本基一乙釀氧基砂院、N -苯基-3-胺基丙基本基 二（甲氧基乙氧基）矽烷、3-三甲氧基甲矽烷基-N- (1,3- -51 - 200903154 二甲基-亞丁基）丙基胺、3-三乙氧基甲矽烷基-N-(1,3-二甲基-亞丁基）丙基胺、3-三-η-丙氧基甲矽烷基-N-( 1,3-二甲基-亞丁基）丙基胺等； 含有脲基之化合物（1 )之具體例，例如有脲基甲基 三甲氧基矽烷、脲基甲基三乙氧基矽烷、脲基甲基三-η-丙 氧基矽烷、脲基甲基三-i-丙氧基矽烷、脲基甲基三乙醯氧 基矽烷、脲基甲基三（甲氧基乙氧基）矽烷、脲基甲基甲 基二甲氧基矽烷、脲基甲基甲基二乙氧基矽烷、脲基甲基 甲基二-η-丙氧基矽烷、脲基甲基甲基二-i-丙氧基矽烷、 脲基甲基甲基二乙醯氧基矽烷、脲基甲基乙基二甲氧基矽 烷、脲基甲基乙基二乙氧基矽烷、脲基甲基乙基二-η-丙氧 基矽烷、脲基甲基乙基二-i-丙氧基矽烷、脲基甲基乙基二 乙醯氧基矽烷、脲基甲基乙基二（甲氧基乙氧基）矽烷、 脲基甲基苯基二甲氧基矽烷、脲基甲基苯基二乙氧基矽烷 、脲基甲基苯基二-η-丙氧基矽烷、脲基甲基苯基二-i-丙 氧基矽烷、脲基甲基苯基二乙醯氧基矽烷、脲基甲基苯基 二（甲氧基乙氧基）矽烷、2 -脲基乙基三甲氧基矽烷、2-脲基乙基三乙氧基矽烷、2-脲基乙基三-η-丙氧基矽烷、2-脲基乙基三-i-丙氧基矽烷、2-脲基乙基三乙醯氧基矽烷、 2-脲碁乙基三（甲氧基乙氧基）矽烷、2-脲基乙基甲基二 甲氧基5夕院、2 -脈基乙基甲基_乙氧基砍院、2 -脈基乙基 甲基二-η-丙氧基矽烷、2-脲基乙基甲基二-i-丙氧基矽烷、 2 -脲基乙基甲基二乙醯氧基矽烷、2 -脲基乙基乙基二甲氧 基矽烷、2-脲基乙基乙基二乙氧基矽烷、2-脲基乙基乙基 -52- 200903154 二- η-丙氧基矽烷、2-脲基乙基乙基二-i-丙氧基矽烷、2-脲 基乙基乙基二乙醯氧基矽烷、2 -脲基乙基乙基二（甲氧基 乙氧基）砂院、2 -脈基乙基苯基__甲氧基砂院、2 -脈基乙 基本基_乙氧基5夕院、2 -脈基乙基本基·_η -丙氧基砂垸、 2 -脲基乙基苯基二-i-丙氧基矽烷、2 -脲基乙基苯基二乙醯 氧基矽烷、2-脲基乙基苯基二（甲氧基乙氧基）矽烷、3-脲基丙基三甲氧基矽烷、3 -脲基丙基三乙氧基矽烷、3 -脲 基丙基三-η-丙氧基矽烷、3-脲基丙基三-i-丙氧基矽烷、3-脲基丙基三乙醯氧基矽烷、3 -脲基丙基三（甲氧基乙氧基 )矽烷、3 -脲基丙基甲基二甲氧基矽烷、3 -脲基丙基甲基 二乙氧基矽烷、3-脲基丙基甲基二-η-丙氧基矽烷、3-脲基 丙基甲基二-i-丙氧基矽烷、3-脲基丙基甲基二乙醯氧基矽 烷、3 -脲基丙基乙基二甲氧基矽烷、3 -脲基丙基乙基二乙 氧基矽烷、3-脲基丙基乙基二-η-丙氧基矽烷、3-脲基丙基 乙基二-i-丙氧基矽烷、3-脲基丙基乙基二乙醯氧基矽烷、 3 -脲基丙基乙基二（甲氧基乙氧基）矽烷、3 -脲基丙基苯 基二甲氧基矽烷、3 -脲基丙基苯基二乙氧基矽烷、3 -脲基 丙基苯基二-η-丙氧基矽烷、3-脲基丙基苯基二-i-丙氧基矽 院、3 -脈基丙基本基_乙釀氧基砂院、3 -服基丙基苯基_. (甲氧基乙氧基）矽烷等； 含有苯乙烯基之化合物（1 )之具體例，例如有苯乙 烯基三甲氧基矽烷、苯乙烯基三乙氧基矽烷、苯乙烯基 三- η-丙氧基矽烷、苯乙烯基三-i-丙氧基矽烷、苯乙烯基 三乙醯氧基矽烷、苯乙烯基三（甲氧基乙氧基）矽烷、苯 -53 - 200903154 乙稀基甲基—甲氧基ϊ夕院、苯乙傭基甲基—乙氧基ϊ夕院、 苯乙烯基甲基二-η-丙氧基矽烷、苯乙烯基甲基二-i-丙氧 基矽烷、苯乙烯基甲基二乙醯氧基矽烷、苯乙烯基乙基二 甲氧基矽烷、苯乙烯基乙基二乙氧基矽烷、苯乙烯基乙基 二- η-丙氧基矽烷、苯乙烯基乙基二-i-丙氧基矽烷、苯乙 烯基乙基二乙醯氧基矽烷、苯乙烯基乙基二（甲氧基乙氧 基）砂院、苯乙儲基苯基二甲氧基砂院、苯乙烯基苯基二 乙氧基矽烷、苯乙烯基苯基二- η-丙氧基矽烷、苯乙烯基苯 基二-i-丙氧基矽烷、苯乙烯基苯基二乙醯氧基矽烷、苯乙 烯基苯基二（甲氧基乙氧基）矽烷等。 這些中，較佳爲使用含有環氧基、氧環丁基、羥基、 氫硫基之化合物（1 )，從與[A]成分之反應性及保存安定 性的觀點，特佳爲3-環氧丙氧基丙基三甲氧基矽烷、3-環 氧丙氧基丙基三乙氧基矽烷、3-環氧丙氧基丙基甲基二甲 氧基矽烷、3 -環氧丙氧基丙基甲基二乙氧基矽烷、2-( 3,4-環氧基環己基）乙基三甲氧基矽烷、2- ( 3,4-環氧基 環己基）乙基三乙氧基矽烷、（3-乙基氧環丁烷-3-基）丙 基三甲氧基矽烷、（3_乙基氧環丁烷-3-基）丙基三乙氧基 矽烷、3 -氫硫基丙基三甲氧基矽烷、3 -氫硫基丙基三乙氧 基矽烷。 化合物（2 )之具體例如四甲氧基矽烷、四乙氧基矽 烷（通稱TEOS)、四-η -丙氧基矽烷、四異丙氧基矽烷、 四-η-丁氧基矽烷之四烷氧基矽烷；如甲基三甲氧基矽烷、 甲基三乙氧基矽烷、甲基三-η-丙氧基矽烷、乙基三乙氧基 -54- 200903154 矽烷、環己基三乙氧基矽烷之單烷基三烷氧基矽烷；如苯 基三乙氧基矽烷、萘基三乙氧基矽烷、4 -氯苯基三乙氧基 矽烷、4 -氰苯基三乙氧基矽烷、4 -胺基苯基三乙氧基矽烷 、4 -硝基苯基三乙氧基矽烷、4 -甲基苯基三乙氧基矽烷、 4-羥苯基三乙氧基矽烷之單芳基三烷氧基矽烷；如苯氧基 三乙氧基矽烷、萘氧基三乙氧基矽烷、4-氯苯氧基三乙氧 基矽烷、4 -氰基苯基三氧基乙氧基矽烷、4 -胺基苯基氧基 三乙氧基矽烷、4 -硝基苯基氧基三乙氧基矽烷、4 -甲基苯 基氧基三乙氧基矽烷、4 -羥苯基氧基三乙氧基矽烷之單芳 氧基三烷氧基矽烷；如單羥基三甲氧基矽烷、單羥基三乙 氧基矽烷、單羥基三-η-丙氧基矽烷之單羥基三烷氧基矽烷 :如二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二甲基 二-η-丙氧基矽烷、甲基（乙基）二乙氧基矽烷、甲基（環 己基）二乙氧基矽烷之二烷基二烷氧基矽烷；如甲基（苯 基）二乙氧基矽烷之單烷基單芳基二烷氧基矽烷；如二苯 基二乙氧基矽烷之二芳基二烷氧基矽烷；如二苯氧基二乙 氧基砂院之一方氧基—院氧基砂院；如甲基（苯氧基）—. 乙氧基矽烷之單烷基單芳氧基二烷氧基矽烷；如苯基（苯 氧基）二乙氧基矽烷之單芳基單芳氧基二烷氧基矽烷；如 二羥基二甲氧基矽烷、二羥基二乙氧基矽烷、二羥基二-η-丙氧基矽烷之二羥基二烷氧基矽烷；如甲基（羥基）二甲 氧基矽烷之單烷基單羥基二烷氧基矽烷；如苯基（羥基） 二甲氧基矽烷之單芳基單羥基二烷氧基矽烷；如三甲基甲 氧基矽烷、三甲基乙氧基矽烷、三甲基-η-丙氧基矽烷、二 -55- 200903154 甲基（乙基）乙氧基矽烷、二甲基（環己基）乙氧基矽烷 之三烷基單烷氧基矽烷；如二甲基（苯基）乙氧基矽烷之 二烷基單芳基單烷氧基矽烷；如甲基（二苯基）乙氧基矽 烷之單烷基二芳基單烷氧基矽烷；如三苯氧基乙氧基矽烷 之三芳氧基單烷氧基矽烷；如甲基（二苯氧基）乙氧基矽 烷之單烷基二芳氧基單烷氧基矽烷；如苯基（二苯氧基） 乙氧基矽烷之單芳基二芳氧基單烷氧基矽烷；如二甲基（ 苯氧基）乙氧基矽烷之二烷基單芳氧基單烷氧基矽烷；如 二苯基（苯氧基）乙氧基矽烷之二芳基單芳氧基單烷氧基 矽烷；如甲基（苯基）（苯氧基）乙氧基矽烷之單烷基單 芳基單芳氧基單烷氧基矽烷；如三羥基甲氧基矽烷、三羥 基乙氧基矽烷、三羥基-η-丙氧基矽烷之三羥基單烷氧基矽 烷。 這些中，從反應性、對基板之密著性的觀點，較佳爲 四甲氧基矽烷、四乙氧基矽烷、甲基三甲氧基矽烷、甲基 三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、 二甲基二曱氧基矽烷、二甲基二乙氧基矽烷、二苯基二甲 氧基矽烷、二苯基二乙氧基矽烷。 這些化合物可以任意組成併用任意之多種化合物。 將上述化合物付諸於共水解反應，可形成本發明使用 之[C ]成分的矽氧烷低聚物I。 水解反應較佳爲在適當之溶劑中進行。這種溶劑例如 有甲醇、乙醇、η -丙醇、異丙醇、η - 丁醇、異丁醇、t - 丁 醇、丙酮、甲基乙基酮、甲基異丁酮、丙二醇單甲醚、丙 -56- 200903154 二醇甲醚乙酸酯、四氫呋喃、二噁烷、乙腈之水溶性溶劑 或這些之水溶液。 這些之水溶性溶劑係在其後之步驟中被除去’因此較 佳爲甲醇、乙醇、η-丙醇、異丙醇、丙酮、甲基乙基酮、 甲基異丁 _、四氫咲喃等較低沸點者’從原料之丨谷解性的 觀點，更佳爲丙酮、甲基乙基酮、甲基異丁酮等之酮類’ 最佳爲甲基異丁酮。 合成〔C〕成分之矽氧烷低聚物I之水解反應較佳爲 在酸觸媒或驗觸媒的存在下進行。酸觸媒例如有鹽酸、硫 酸、硝酸、甲酸、草酸、乙酸、三氟乙酸、三氟甲烷磺酸 、酸性離子交換樹脂、各種路易斯酸等。鹼觸媒例如有氨 、一級胺、二級胺、三級胺類、吡啶等含氮芳香族化合物 、鹼性離子交換樹脂、氫氧化鈉等氫氧化物、碳酸鉀等碳 酸鹽、乙酸鈉等羧酸鹽、各種路易斯鹼等。水的使用量、 反應溫度、反應時間係適當設定。例如可採用下述條件。 水的使用量係對於下述上述式（1)或（2 )表示之化 合物中之院氧基與鹵原子之合計量1莫耳，使用1.5莫耳 以下’較佳爲1莫耳以下，更佳爲〇 · 9莫耳以下的量。 反應溫度係40〜200。(：，較佳爲50〜150。〇。 反應時間係3 0分鐘〜2 4小時，更佳爲1〜1 2小時。 上述砂氧烷低聚物II係下述式（9)表示。 -57- ,22200903154Si(R8)s(R9)t(OR10)u(1) wherein R8 represents an epoxy group containing an oxycyclobutyl group, a cyclothioalkenyl group, an allyl group, a (meth) acrylonitrile group, a substituent of a carboxyl group, a hydroxyl group, a hydrogen group, an isocyanate group, an amine group, a urea group or a styryl group, and the R1Q group may be the same or different 'each is a monovalent organic group, and the S system is 1 to 3, and the t system is an integer of 2 to 2 , U is an integer from 1 to 3, but s + t + u = 4 S i (R 1 1) X (〇R12) 4 - X ( 2) where R11 and R can be the same or different, each being 1 valence The organic cog is further heated by the above formula (the following condensation, ethylthio group R9, integer-25-200903154 is 0 to 2 integers. The above-mentioned co-hydrolyzate should be hydrolyzed in the raw material) Part of the hydrolyzed part and the part thereof are hydrolyzed, a part of which is not hydrolyzed, and a specific example of the compound (1) containing an epoxy group, for example, propoxymethyltrimethoxydecane, 3 - Glycidoxymethyltriethane, 3-epoxypropoxymethyltri-n-propoxydecane, 3-epoxypropyltri-i-propoxydecane, 3-glycidoxypropane Methyltriethylphosphonium 3-glycidoxymethylmethyl Dimethoxydecane, 3-glycidoxymethyldiethoxydecane, 3-glycidoxymethylmethyldi-n-propane, 3-epoxypropoxymethylmethyldi- I-propoxydecane, 3-cyclomethylmethyldiethoxydecane, 3-glycidoxymethylethoxydecane, 3-glycidoxymethylethyldiethoxy Baseline, propoxymethylethyldi-n-propoxydecane, 3-epoxypropoxymethyldi-i-propoxydecane, 3-glycidoxymethylethyldiacetamidine Oxygen, 3-glycidoxymethylphenyldimethoxydecane, 3-epoxypropylphenyldiethoxydecane, 3-glycidoxymethylphenyldi-n.  Decane, 3-glycidoxymethylphenyldi-i-propoxydecane, 3-oxymethylphenyldiethoxydecane, 3-glycidoxyethyldecane, 3 -glycidoxyethyltriethoxydecane, 3-epoxyethyltri-n-propoxydecane, 3-glycidoxyethyltri-i-propoxy, 3-epoxypropane Oxyethyltriethoxydecane, 3-glycidoxymethyldimethoxydecane, 3-glycidoxyethylmethyldiethoxy, 3-epoxypropoxyethyl All of the residues of bis-n-propoxy decane and 3-epoxy 3_epoxyoxydecyloxymethane, benzyloxyoxypropoxy dimethyl 3-epoxyethyl Decyloxymethylpropoxyepoxy propylenetrimethoxypropoxy decane, an ethyl decylpropoxy -26- 200903154 ethylmethyldi-i-propoxy decane, 3-epoxypropoxy Methyldiethoxydecane, 3-glycidoxyethylethyldimethoxydecane, 3-glycidoxyethylethyldiethoxydecane, 3-glycidoxy Ethylethyldi-n-propoxydecane, 3-glycidoxyethylethyldi-i-propoxydecane, 3-glycidoxyethylethyldiethoxydecane, 3-glycidoxyethylphenyldimethoxydecane, 3-glycidoxyethylphenyldiethoxy Decane, 3-glycidoxyethylphenyldi-η-propoxydecane, 3-glycidoxyethylphenyldi-i-propoxydecane, 3-epoxypropoxy B Phenyl phenyl ethoxy decane, 3-glycidoxypropyl trimethoxy decane, 3-glycidoxypropyl triethoxy decane, 3-glycidoxypropyl tri- Η-propoxydecane, 3-glycidoxypropyltri-i-propoxydecane, 3-glycidoxypropyltriethoxydecane, 3-glycidoxypropyl Methyldimethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-glycidoxypropylmethyldi-n-propoxydecane, 3-epoxypropane Oxypropylmethyldi-i-propoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-glycidoxypropylethyldimethoxydecane, 3-glycidoxypropylethyldiethoxydecane, 3-glycidoxypropylethyldi-n-propoxydecane, 3-epoxypropoxypropane Benzyl di-i-propoxydecane, 3-glycidoxypropylethyldiethoxydecane, 3-glycidoxypropylphenyldimethoxydecane, 3-ring Oxypropoxypropylphenyldiethoxydecane, 3-glycidoxypropylphenyldi-n-propoxydecane, 3-glycidoxypropylphenyldi-i-propyl Oxydecane, 3-glycidoxypropylphenyldiethoxydecane, 2-(3,4-epoxycyclohexyl)methyltrimethoxydecane, 2-(3,4-ring Oxycyclohexyl)methyltriethoxydecane, 2-(3,4-epoxycyclohexyl)methyl-27- 200903154-tris-n-propoxydecane, 2-(3,4-epoxy Cyclohexyl)methyltriethoxydecane, 2-(3,4-epoxycyclohexyl)methylmethyldimethoxydecane, 2-(3,4-epoxycyclohexyl)methyl Methyldiethoxy decane, 2-(3,4-epoxycyclohexyl)methylmethyldi-η-propoxydecane, 2-(3,4-epoxycyclohexyl)methyl Methyldiethoxydecane, 2-(3,4-epoxycyclohexyl)methylethyldimethoxydecane, 2-(3,4-epoxycyclohexyl)methylethyl Ethoxy decane, 2- ( 3,4-ring Oxycyclohexyl)methylethyldi-η-propoxydecane, 2-(3,4-epoxycyclohexyl)methylethyldiethoxymethoxydecane, 2-(3,4-ring Oxycyclohexyl)methylphenyldimethoxydecane, 2-(3,4-epoxycyclohexyl)methylphenyldiethoxydecane, 2-(3,4-epoxycyclohexyl )methylphenyl di-η-propoxydecane, 2-(3,4-epoxycyclohexyl)methylphenyldiethoxydecane, 2-(3,4-epoxycyclohexyl Ethyltrimethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltriethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltri-n-propoxy Baseline, 2-(3,4-epoxycyclohexyl)ethyltriethoxypropane, 2-(3,4-epoxycyclohexyl)ethylmethyldimethoxydecane, 2- (3,4-Epoxycyclohexyl)ethylmethyldiethoxydecane, 2-(3,4-epoxycyclohexyl)ethylmethyldi-n-propoxydecane, 2-( 3,4-Epoxycyclohexyl)ethylmethyldiethoxydecane, 2-(3,4-epoxycyclohexyl)ethylethyldimethoxydecane, 2-(3,4 -Epoxycyclohexyl)ethylethyldiethoxyanthracene , 2-(3,4-epoxycyclohexyl)ethylethyldi-η-propoxydecane, 2-(3,4-epoxycyclohexyl)ethylethyldiethoxypropane , 2-(3,4-Epoxycyclohexyl)ethylphenyldimethoxydecane, 2-(3,4-epoxycyclohexyl)ethylphenyl-28 - 200903154 Diethoxydecane , 2-(3,4-epoxycyclohexyl)ethylphenyldi-η-propoxydecane, 2-(3,4-epoxycyclohexyl)ethylphenyldiethoxypropane , 2-(3,4-epoxycyclohexyl)propyltrimethoxydecane, 2-(3,4-epoxycyclohexyl)propyltriethoxydecane, 2-(3,4-ring Oxycyclohexyl)propyltri-n-propoxydecane, 2-(3,4-epoxycyclohexyl)propyltriethoxypropane, 2-(3,4-epoxycyclohexyl ) propylmethyldimethoxydecane, 2-(3,4-epoxycyclohexyl)propylmethyldiethoxydecane, 2-(3,4-epoxycyclohexyl)propyl Di-n-propoxydecane, 2-(3,4-epoxycyclohexyl)propylmethyldiethoxydecane, 2-(3,4-epoxycyclohexyl)propyl Dimethoxyoxane, 2-(3,4-epoxycyclohexyl)propane Ethyldiethoxydecane, 2-(3,4-epoxycyclohexyl)propylethyldi-n-propoxydecane, 2-(3,4-epoxycyclohexyl)propyl B Ethylene decyloxydecane, 2-(3,4-epoxycyclohexyl)propylphenyldimethoxydecane, 2-(3,4-epoxycyclohexyl)propylphenyldiethyl Oxydecane, 2-(3,4-epoxycyclohexyl)propylphenyldi-n-propoxydecane, 2-(3,4-epoxycyclohexyl)propylphenyldiacetamidine Specific examples of the compound (1) containing an episulfide group include, for example, 2,3-cyclothiopropoxymethyltrimethoxydecane and 2,3-cyclosulfoxymethyltriethoxylate. Baseline, 2,3-cyclothiopropoxymethyltri-n-propoxydecane, 2,3·cyclothiopropoxymethyltri-i-propoxydecane, 2,3-thiosulfan Oxymethyltriethoxydecane, 2,3-cyclothiopropoxymethylmethyldimethoxydecane, 2,3-cyclothiopropoxymethylmethyldiethoxydecane, 2 , 3-cyclosulfoxymethylmethyldi-n-propoxydecane, 2,3-cyclosulfoxymethylmethyldi-i-propoxy--29- 200903154 decane, 2,3 - Cyclopropyloxymethylmethyldi醯oxydecane, 2,3-cyclothiopropoxymethylethyldimethoxydecane, 2,3-cyclothiopropoxymethylethyldiethoxydecane, 2,3-cyclothiopropane Oxymethylethyldi-n-propoxydecane, 2,3-cyclosulfoxymethylethyldi-i-propoxydecane, 2,3-cyclosulfoxymethylethyl Diethoxydecane, 2,3-cyclosulfoxymethylphenyldimethoxydecane, 2,3-cyclosulfoxymethylphenyldiethoxydecane, 2,3-ring Thiopropyloxymethylphenyl di-η-propoxydecane, 2,3-cyclosulfoxymethylphenyldi-i-propoxydecane, 2,3-cyclothiopropoxymethyl Phenyldiethoxydecane, 2,3-cyclothiopropoxyethyltrimethoxydecane, 2. 3-cyclothiopropoxyethyltriethoxydecane, 2,3-cyclothiopropoxyethyltri-n-propoxydecane, 2,3-cyclosulfoxyethyltri-i- Propoxy decane, 2. 3-cyclothiopropoxyethyltriethoxypropane, 2,3-cyclothiopropoxyethylmethyldimethoxydecane, 2,3-cyclothiopropoxyethylmethyldiethyl Oxydecane, 2,3-cyclosulfoxyethylethyldi-n-propoxydecane, 2,3-cyclosulfoxyethylethyldi-i-propoxydecane, 2, 3-cyclothiopropoxyethylmethyldiethoxydecane, 2,3-cyclothiopropoxyethylethyldimethoxydecane, 2,3-cyclothiopropoxyethylethyl Diethoxydecane, 2,3-cyclothiopropoxyethylethyldi-n-propoxydecane, 2,3-epoxypropyloxyethylethyldi-i-propoxydecane, 2,3-Cyclothiopropoxyethylethyldiethoxypropane, 2,3-cyclothiopropoxyethylphenyldimethoxydecane, 2,3-cyclothiopropoxyethyl Ethoxylate, 2,3 - thiopropyloxyethylphenyl di-η-propoxy decane, 2,3-cyclothiopropoxyethylphenyldi-i-propoxy Decane, 2,3-cyclothiopropoxyethylphenyldiethoxydecane, 2,3-cyclothiopropoxypropyltrimethoxydecane 2,3-cyclothiopropoxypropyl Ethoxy-30 - 200903154 decane, 2,3- thiosulfan Oxypropyl tri-n-propoxydecane, 2,3-cyclothiopropoxypropyltri-i-propoxydecane, 2,3-cyclothiopropoxypropyltriethoxypropane , 2,3-cyclothiopropoxypropylmethyldimethoxydecane, 2,3-cyclosulfoxypropylmethyldiethoxydecane, 2,3-cyclothiopropoxypropyl Methyl di-n-propoxydecane, 2,3-cyclothiopropoxypropylmethyldi-i-propoxydecane, 2,3-cyclothiopropoxypropylmethyldiethoxycarbonyl Baseline, 2,3-cyclothiopropoxypropyl ethyldimethoxydecane, 2,3-cyclothiopropoxypropylethyldiethoxydecane, 2,3-cyclothiopropoxy Propylethyldi-n-propoxydecane, 2,3-cyclothiopropoxypropylethyldi-i-propoxydecane, 2,3-cyclothiopropoxypropylethyldiethyl醯oxydecane, 2,3-cyclothiopropoxypropyl phenyl dimethoxy decane, 2,3-cyclothiopropoxy phenyl diethoxy decane, 2,3- thio thio Oxypropyl phenyl di-η-propoxy decane, 2,3-cyclothiopropoxypropyl phenyl di-i-propoxy decane, 2,3-cyclothiopropoxy phenyl Diethoxy decane, etc.; compound containing oxocyclobutyl Specific examples of (1) are, for example, (oxycyclobutane-3-yl)methyltrimethoxydecane, (oxycyclobutane-3-yl)methyltriethoxydecane, (oxycyclobutane- 3-yl)methyltri-n-propoxydecane, (oxycyclobutane-3-yl)methyltri-i-propoxydecane, (oxycyclobutane-3-yl)methyltriethyl醯oxydecane, (oxycyclobutane-3-yl)methylmethyldimethoxydecane, (oxycyclobutane-3-yl)methylmethyldiethoxydecane, (oxycyclobutane) 3-yl)methylmethyldi-η-propoxydecane, (oxycyclobutane-3-yl)methylmethyldi-i-propoxydecane, (oxocyclobutane-3-yl) ) methylmethyldiethoxydecane, (oxycyclobutane-3-yl)methylethyldimethoxydecane, (oxycyclobutane-3-yl)methylethyl-31 - 200903154 Diethoxydecane, (oxycyclobutane-3-yl)methylethyldi-η-propoxydecane, (oxycyclobutane-3-yl)methylethyldi-i-propoxy Decane, (oxycyclobutane-3-yl)methylethyldiethoxydecane, (oxycyclobutane-3-yl)methylphenyldimethoxydecane, (oxycyclobutane-3) -yl)methylphenyl Diethoxydecane, (oxycyclobutane-3-yl)methylphenyldi-n-propoxydecane, (oxycyclobutane-3-yl)methylphenyldi-i-propoxy Decane, (oxycyclobutane-3-yl)methylphenyldiethoxydecane, (oxycyclobutane-3-yl)ethyltrimethoxydecane, (oxocyclobutane-3-yl) Ethyltriethoxydecane, (oxycyclobutane-3-yl)ethyltri-n-propoxydecane, (oxycyclobutane-3-yl)ethyltri-i-propoxydecane, (oxycyclobutane-3-yl)ethyltriethoxymethoxydecane, (oxycyclobutane-3-yl)ethylmethyldimethoxydecane, (oxycyclobutane-3-yl)B Methyldiethoxydecane, (oxycyclobutane-3-yl)ethylmethyldi-n-propoxydecane, (oxycyclobutane-3-yl)ethylmethyldi-i- Propoxy decane, (oxycyclobutane-3-yl)ethylmethyldiethoxy decane, (oxycyclobutane-3-yl)ethylethyldimethoxydecane, (oxycyclobutane) Alkyl-3-yl)ethylethyldiethoxydecane, (oxycyclobutane-3-yl)ethylethyldi-n-propoxydecane, (oxocyclobutane-3-yl)B Ethyl ethyl di-i-propoxy oxime Alkane, (oxycyclobutane-3-yl)ethylethyldiethoxydecane, (oxycyclobutane-3-yl)ethylphenyldimethoxydecane, (oxycyclobutane-3) -yl)ethylphenyldiethoxydecane, (oxycyclobutane-3-yl)ethylphenyldi-n-propoxydecane, (oxycyclobutane-3-yl)ethylphenyl Di-i-propoxydecane, (oxycyclobutane-3-yl)ethylphenyldiethoxydecane, (oxycyclobutane-3-yl)propyltrimethoxydecane, (oxygen ring) Butane-3-yl)propyltriethoxydecane, (oxycyclo-32-200903154 butan-3-yl)propyltri-n-propoxydecane, (oxocyclobutane-3-yl) Propyltri-i-propoxydecane, (oxycyclobutane-3-yl)propyltriethoxydecane, (oxycyclobutane-3-yl)propylmethyldimethoxydecane, (oxycyclobutane-3-yl)propylmethyldiethoxydecane, (oxycyclobutane-3-yl)propylmethyldi-n-propoxydecane, (oxycyclobutane-3) -yl)propylmethyldi-i-propoxydecane, (oxycyclobutane-3-yl)propylmethyldiethoxydecane, (oxycyclobutane-3-yl)propyl Dimethoxydecane , (oxycyclobutane-3-yl)propylethyldiethoxydecane, (oxycyclobutane-3-yl)propylethyldi-n-propoxydecane, (oxycyclobutane- 3-yl)propylethyldi-i-propoxydecane, (oxycyclobutane-3-yl)propylethyldiethoxydecane, (oxycyclobutane-3-yl)propyl Phenyldimethoxydecane, (oxocyclobut-3-yl)propylphenyl-ethoxylate, (oxy- singer- 3) propyl phenyl di-n-propoxy Alkane, (oxycyclobutane-3-yl)propylphenyldi-i-propoxydecane, (oxycyclobutane-3-yl)propylphenyldiethoxypropane, (3 - Methyloxycyclobutane-3-yl)methyltrimethoxydecane, (3-methyloxocyclobutane-3-yl)methyltriethoxydecane, (3-methyloxetane- 3-yl)methyltri-n-propoxydecane, (3-methyloxetane-3-yl)methyldi-i-propoxyl; t-end, (3-methyloxy) 1 Aden Dingyuan-3 -yl)methyltriethoxydecane, (3-methyloxocyclobutane-3-yl)methylmethyldimethoxydecane, (3-methyloxetane Alkyl-3-yl)methylmethyldiethoxydecane (3-methyloxocyclobutane-3-yl)methylmethyldi-η-propoxydecane, (3-methyloxocyclobutane-3-yl)methylmethyldi-i-propyl Oxytochrome, (3-methyloxy sulphate-3-yl)methylmethyl-ethyloxy 5, (3-methyloxetane-3-yl)methyl Dimethoxy decane, (3-methyl-33- 200903154 oxycyclobutane-3-yl)methylethyl diethoxy decane, (3-methyloxocyclobutane-3-yl) A Benzyldi-n-propoxydecane, (3-methyloxocyclobutane-3-yl)methylethyldi-i-propoxydecane, (3-methyloxetane-3 -yl)methylethyldiethoxydecane, (3-methyloxocyclobutan-3-yl)methylphenyldimethoxydecane, (3-methyloxocyclobutane-3- Methylphenyl diethoxy decane, (3-methyloxocyclobutane-3-yl)methylphenyl--n-propoxy sand, (3-methyloxetane- 3-yl)methylphenyl-one. -i-propoxydecane, (3-methyloxocyclobutane-3-yl)methylphenyldiethoxydecane, (3-methyloxocyclobutane-3-yl)ethyltrimethyl Oxydecane, (3-methyloxocyclobutan-3-yl)ethyltriethoxydecane, (3-methyloxycyclobutane-3-yl)ethyltri-n-propoxydecane (3-methyloxocyclobutane-3-yl)ethyltri-i-propoxydecane, (3-methyloxocyclobutane-3-yl)ethyltriethoxypropane, ( 3-methyloxocyclobutane-3-yl)ethylmethyldimethoxydecane, (3-methyloxocyclobutane-3-yl)ethylmethyldiethoxydecane, (3 - Methyloxycyclobutane-3-yl)ethylmethyldi-η-propoxydecane, (3-methyloxocyclobutane-3-yl)ethylmethyldi-i-propoxydecane (3-methyloxocyclobutane-3-yl)ethylmethyldiethoxydecane, (3-methyloxocyclobutan-3-yl)ethylethyldimethoxydecane, (3-methyloxocyclobutane-3-yl)ethylethyldiethoxydecane, (3-methyloxycyclobutane-3-yl)ethylethyldi-n-propoxydecane (3-methyloxocyclobutane-3-yl)ethylethyldi-i-propoxy Decane, (3-methyloxocyclobutane-3-yl)ethylethyldiethoxydecane, (3-methyloxocyclobutane-3-yl)ethylphenyldimethoxydecane , (3-methyloxocyclobutane-3-yl)ethylphenyldiethoxydecane, (3-methyloxocyclobutane-3-yl)ethylphenyldi-n--34- 200903154 Propoxydecane, (3-methyloxocyclobutane-3-yl)ethylphenyldi-i-propoxydecane, (3-methyloxocyclobutane-3-yl)ethylbenzene (2-methyloxycyclobutane-3-yl)propyltrimethoxydecane, (3-methyloxocyclobutane-3-yl)propyltriethoxydecane (3-methoxyoxetane-3-yl)propyltri-n-propoxydecane, (3-methyloxocyclobutane-3-yl)propyltri-i-propoxydecane (3-methyloxocyclobutane-3-yl)propyltriethoxypropane, (3-methyloxocyclobutan-3-yl)propylmethyldimethoxydecane, (3 -methyloxocyclobutane-3-yl)propylmethyldiethoxydecane, (3-methyloxycyclobutane-3-yl)propylmethyldi-n-propoxydecane, ( 3-methyloxocyclobutane-3-yl)propylmethyldi-i-propyl Baseline, (3-methyloxocyclobutane-3-yl)propylmethyldiethoxydecane, (3-methyloxocyclobutane-3-yl)propylethyldimethoxy Decane, (3-methyloxocyclobutane-3-yl)propylethyldiethoxydecane, (3-methyloxycyclobutane-3-yl)propylethyldi-n-propoxy Baseline, (3-methyloxycyclobutane-3-yl)propylethyldi-i-propoxydecane, (3-methyloxocyclobutane-3-yl)propylethyldiethyl醯oxydecane, (3-methyloxycyclobutane-3-yl)propylphenyldimethoxydecane, (3-methyloxocyclobutane-3-yl)propylphenyldiethoxylate Baseline, (3-methyloxocyclobutane-3-yl)propylphenyldi-η-propoxydecane, (3-methyloxocyclobutane-3-yl)propylphenyldi- I-propoxydecane, (3-methyloxocyclobutane-3-yl)propylphenyldiethoxydecane, (3-ethyloxycyclobutane-3-yl)methyltrimethoxy Pyridin, (3-ethyloxycyclobutane-3-yl)methyltriethoxydecane, (3-ethyloxycyclobutane-3-yl)methyltri-n-propoxydecane, (3-ethyloxocyclobutane-3-yl)methyltri-i-propoxy Decane, (3-ethyloxycyclobutane-3-yl)methyltriethylhydrazine-35- 200903154 oxoxane, (3-ethyloxocyclobutane-3-yl)methylmethyldimethoxy Base decane, (3-ethyloxycyclobutane-3-yl)methylmethyldiethoxy decane, (3-ethyloxycyclobutane-3-yl)methylmethyldi-n-propyl Oxydecane, (3-ethyloxycyclobutane-3-yl)methylmethyldi-i-propoxydecane, (3-ethyloxycyclobutane-3-yl)methylmethyl Ethoxy decane, (3-ethyloxycyclobutane-3-yl)methylethyldimethoxydecane, (3-ethyloxycyclobutane-3-yl)methylethyldiethyl Oxydecane, (3-ethyloxycyclobutane-3-yl)methylethyldi-n-propoxydecane, (3-ethyloxocyclobutane-3-yl)methylethyl -i-propoxydecane, (3-ethyloxycyclobutane-3-yl)methylethyldiethoxydecane, (3-ethyloxycyclobutane-3-yl)methylbenzene Dimethoxy decane, (3-ethyloxycyclobutane-3-yl)methylphenyldiethoxy decane, (3-ethyloxycyclobutane-3-yl)methylphenyl -η-propoxydecane, (3-ethyloxocyclobutane-3 -yl)methylphenyldi-i-propoxydecane, (3-ethyloxycyclobutane-3-yl)methylphenyldiethoxydecane, (3-ethyloxycyclobutane) 3-yl)ethyltrimethoxydecane, (3-ethyloxycyclobutane-3-yl)ethyltriethoxydecane, (3-ethyloxycyclobutane-3-yl)ethyl Tri-n-propoxydecane, (3-ethyloxycyclobutane-3-yl)ethyltri-i-propoxydecane, (3-ethyloxocyclobutane-3-yl)ethyl Triethoxydecane, (3-ethyloxycyclobutane-3-yl)ethylmethyldimethoxydecane, (3-ethyloxocyclobutane-3-yl)ethylmethyldi Ethoxy decane, (3-ethyloxycyclobutane-3-yl)ethylmethyldi-n-propoxydecane, (3-ethyloxycyclobutane-3-yl)ethylmethyl Di-i-propoxydecane, (3-ethyloxocyclobutane-3-yl)ethylmethyldiethoxydecane, (3-ethyloxycyclobutane-3-yl)ethyl Ethyldimethoxydecane, (3-ethyloxycyclobutane-3-36-200903154)ethylethyldiethoxydecane, (3-ethyloxocyclobutane-3-yl) Ethylethyldi-n-propoxydecane, (3-ethyloxetane) 3-yl)ethylethyldi-i-propoxydecane, (3-ethyloxycyclobutane-3-yl)ethylethyldiethoxydecane, (3-ethyloxycyclohexane) Butane-3-yl)ethylphenyldimethoxydecane, (3-ethyloxycyclobutane-3-yl)ethylphenyldiethoxydecane, (3-ethyloxycyclobutane 3-yl)ethylphenyldi-n-propoxydecane, (3-ethyloxycyclobutane-3-yl)ethylphenyldi-i-propoxydecane, (3-ethyl Oxycyclobutane-3-yl)ethylphenyldiethoxydecane, (3-ethyloxycyclobutane-3-yl)propyltrimethoxydecane, (3-ethyloxycyclobutane) 3-yl)propyltriethoxydecane, (3-ethyloxycyclobutane-3-yl)propyltri-n-propoxydecane, (3-ethyloxocyclobutane-3- Propyl tri-i-propoxydecane, (3-ethyloxycyclobutane-3-yl)propyltriethoxydecane, (3-ethyloxycyclobutane-3-yl) Propylmethyldimethoxydecane, (3-ethyloxycyclobutane-3-yl)propylmethyldiethoxydecane, (3-ethyloxycyclobutane-3-yl)propyl Methyl di-n-propoxydecane, (3-ethyloxocyclobutane-3- ) propylmethyldi-i-propoxydecane, (3-ethyloxycyclobutane-3-yl)propylmethyldiethoxydecane, (3-ethyloxycyclobutane-3) -yl)propylethyldimethoxydecane, (3-ethyloxycyclobutane-3-yl)propylethyldiethoxydecane, (3-ethyloxocyclobutane-3-yl) ) propylethyl di-η-propoxydecane, (3-ethyloxycyclobutane-3-yl)propylethyldi-i-propoxydecane, (3-ethyloxycyclobutane) 3-yl)propylethyldiethoxydecane, (3-ethyloxycyclobutan-3-yl)propylphenyldimethoxydecane, (3-ethyloxocyclobutane- 3-yl)propylphenyldiethoxydecane, (3-ethyloxycyclobutane-3-yl)propylphenyldi-n-propoxydecane-37-200903154, (3-ethyl Oxycyclobutane-3-yl)propylphenyldi-i-propoxydecane, (3-ethyloxycyclobutan-3-yl)propylphenyldiethoxycarbonyl oxime, etc.; Specific examples of the vinyl compound (1) are, for example, vinyltrimethoxydecane, vinyltriethoxydecane, vinyltri-n-propoxydecane, vinyltri-i-propoxydecane Vinyltriethoxydecane, vinyl tris(methoxyethoxy)decane, ethylene methyldimethoxydecane, vinylmethyldiethoxydecane, vinylmethyldi-n _Propoxy oxime, Ethyl methylene dipropoxy sand, Ethyl methyl dioxa decane, Vinyl ethyl dimethoxy decane, Vinyl ethyl diethoxy decane , vinyl ethyl di-n-propoxydecane, vinyl ethyl di-i-propoxydecane, vinyl ethyl diethoxy decane, vinyl ethyl bis (methoxy ethoxy) ) decane, vinyl phenyl dimethoxy decane, vinyl phenyl diethoxy decane, vinyl phenyl di- η - propoxy decane, vinyl phenyl di-i - propoxy sand, Ethyl phenyldiethyl ethoxylate, ethyl phenyl bis(methoxyethoxy) litre, etc.; specific examples of the compound (1) containing an allyl group, for example, allyl trimethyl Oxy decane, allyl triethoxy decane, allyl tri-n-propoxy sand, allyl tri-i-propoxy decane, allyl triethoxy decane, ally Base three Methoxyethoxy)decane, allylmethyldimethoxydecane, allylmethyldiethoxydecane, allylmethyldipropoxydecane,allylmethyldi-i -propoxydecane, allylmethyldiethoxydecane, allylethyldimethoxydecane, allylethyldiethoxydecane,allylethyldecane,ene Di-n-propoxydecane, allylethyl-i-propoxyethyldiethoxydecane, allylethyl bis(methyl-38-200903154 oxyethoxy)decane, Allyl phenyl dimethoxy decane, allyl phenyl diethoxy decane, allyl phenyl di- η - propoxy decane, allyl phenyl di-i-propoxy decane, Allyl phenyl diethoxy decane, allyl phenyl-(methoxyethoxy) oxime, etc.; specific examples of the compound (1) containing a (meth) acryl fluorenyl group are 3- (Meth) propylene methoxymethyl trimethoxy decane, 3-(methyl) propylene methoxymethyl triethoxy decane, 3-(methyl) propylene methoxymethyl tri-n-propyl Oxydecane, 3-(methyl)propenyloxymethyltri-i-propyl Oxydecane, 3-(meth)acryloxymethyltriethoxypropane, 3-(methyl)propenyloxymethylmethyldimethoxydecane, 3-(methyl)propene醯oxymethylmethyldiethoxydecane, 3-(methyl)propenyloxymethylmethyldi-n-propoxydecane, 3-(meth)acryloxymethylmethyl Di-i-propoxydecane, 3-(methyl)propenyloxymethylmethyldiethoxydecane, 3-(meth)acryloxymethylethyldimethoxydecane, 3-(Methyl)propenyloxymethylethyldiethoxydecane, 3-(methyl)propenyloxymethylethyldi-n-propoxydecane, 3-(methyl)propene醯oxymethylethyldi-i-propoxydecane, 3-(methyl)propenyloxymethylethyldiethoxydecane, 3-(meth)acryloxymethylbenzene Dimethoxy decane, 3-(meth) propylene methoxymethylphenyl diethoxy decane, 3-(methyl) propylene methoxymethylphenyl bis-! 1 - propoxy decane , 3-(Methyl)propenyloxymethylphenyl di-i-propoxydecane, 3-(methyl)propenyloxymethylphenyldiacetamidine Oxydecane, 3-(methyl)propenyloxyethyltrimethoxydecane, 3-(methyl)propenyloxyethyltriethoxydecane, 3-(methyl)acryloxypropoxylate B Base tris-n-propoxy-39- 200903154 decane, 3-(meth) propylene methoxyethyl tri-i-propoxy decane, 3-(methyl) propylene methoxyethyl triethyl hydrazine Oxydecane, 3-(methyl)propenyloxyethylmethyldimethoxydecane, 3-(methyl)propenyloxyethylmethyldiethoxydecane, 3-(methyl) Propylene methoxyethyl methyl di-η-propoxy decane, 3-(meth) propylene methoxyethyl methyl di-i-propoxy decane, 3-(methyl) propylene decyloxy Ethylmethyldiethoxydecane, 3-(methyl)propenyloxyethylethyldimethoxydecane, 3-(methyl)propenyloxyethylethyldiethoxydecane , 3-(methyl)propenyloxyethylethyldi-n-propoxydecane, 3-(methyl)propenyloxyethylethyldi-i-propoxydecane, 3-( Methyl)propenyloxyethylethyldiethoxypropane, 3-(methyl)propenyloxyethylphenyldimethoxyindole , 3-(methyl)propenyloxyethylphenyldiethoxydecane, 3-(methyl)propenyloxyethylphenyldi-n-propoxydecane, 3-(methyl) Propylene oxiranyl ethyl phenyl di-i-propoxy decane, 3-(methyl) propylene methoxyethyl phenyl diethoxy decane, 3-(methyl) propylene methoxy propyl Trimethoxydecane, 3-(meth)acryloxypropyltriethoxydecane, 3-(methyl)propenyloxypropyltri-n-propoxydecane, 3-(methyl) Propylene methoxypropyl tri-i-propoxy decane, 3-(methyl) propylene methoxy propyl triethoxy decyl, 3-(methyl) propylene methoxy propyl methyl dimethyl Oxydecane, 3-(meth)acryloxypropylmethyldiethoxydecane, 3-(methyl)propenyloxypropylmethyldi-n-propoxydecane, 3-( Methyl)propenyloxypropylmethyldi-i-propoxydecane, 3-(methyl)propenyloxypropylmethyldiethoxydecane, 3-(methyl)propeneoxyl Propyl propyl dimethoxy decane ' 3-(methyl) -40- 200903154 propylene methoxy propyl ethyl diethoxy decane, 3-(methyl) Isomethoxypropylethyldi-n-propoxydecane, 3-(methyl)propenyloxypropylethyldi-i-propoxydecane, 3-(methyl)propenyloxy Propylethyldiethoxydecane, 3-(methyl)propenyloxypropylphenyldimethoxydecane, 3-(methyl)propenyloxypropylphenyldiethoxydecane , 3-(methyl)propenyloxypropylphenyldi-η-propoxydecane, 3-(methyl)propenyloxypropylphenyldi-i-propoxydecane, 3-( Methyl)propenyloxypropylphenyldiethoxydecane, etc.; specific examples of the compound (1) having a carboxyl group include, for example, carboxymethyltrimethoxydecane, carboxymethyltriethoxydecane, and carboxy Methyltri-n-propoxydecane, carboxymethyltri-i-propoxydecane, carboxymethyltriethoxydecane, carboxymethyltris(methoxyethoxy)decane, carboxymethyl Methyldimethoxydecane, carboxymethylmethyldiethoxydecane, carboxymethylmethyldi-n-propoxydecane, carboxymethylmethyldi-i-propoxydecane, carboxymethyl Methyldiethoxydecane, carboxymethylethyldimethoxydecane, carboxymethylethyl Diethoxydecane, carboxymethylethyldi-η-propoxydecane, carboxymethylethyldi-i-propoxydecane, carboxymethylethyldiethoxypropane, carboxymethyl Bis(methoxyethoxy)decane, carboxymethylphenyldimethoxydecane, carboxymethylphenyldiethoxydecane, carboxymethylphenyldi-n-propoxydecane, carboxymethyl Phenyldi-i-propoxydecane, carboxymethylphenyldiethoxydecane, carboxymethylphenylbis(methoxyethoxy)decane, 2-carboxyethyltrimethoxydecane, 2-carboxyethyltriethoxydecane, 2-carboxyethyltri-n-propoxydecane, 2-carboxyethyltri-i-propoxydecane, 2-carboxyethyltriethoxydecane , 2-carboxyethyltris(methoxyethoxy)decane, 2-carboxyethylmethyldimethoxydecane, -41 - 200903154 2-carboxyethylmethyldiethoxydecane, 2-carboxylate Ethylmethyldi-n-propoxydecane, 2-carboxyethylmethyldi-i-propoxydecane, 2-carboxyethylmethyldiethoxydecane, 2-carboxyethylethyl Dimethoxydecane, 2-carboxyethylethyldiethoxydecane, 2-carboxyethylethyldi-n-propoxydecane , 2-carboxyethylethyldipropoxydecane, 2-carboxyethylethyldiethoxydecane, 2-carboxyethylethylbis(methoxyethoxy)decane, 2-carboxyl Phenyldimethoxydecane, 2-carboxyethylphenyldiethoxydecane, 2-carboxyethylphenyldi-η-propoxydecane, 2-carboxyethylphenyldi-i-propyl Specific examples of the compound (1) having a hydroxyl group, for example, oxydecane, 2-carboxyethylphenyldiethoxydecane, 2-carboxyethylphenylbis(methoxyethoxy)decane, etc. Hydroxymethyltrimethoxydecane, hydroxymethyltriethoxydecane, hydroxymethyltri-n-propoxydecane, hydroxymethyltri-i-propoxydecane, hydroxymethyltriethoxydecane , hydroxymethyltris(methoxyethoxy)decane, hydroxymethylmethyldimethoxydecane, methylolmethyldiethoxydecane, hydroxymethylmethyldi-n-propoxydecane , hydroxymethylmethyldi-i-propoxydecane, hydroxymethylmethyldiethoxydecane, hydroxymethylethyldimethoxydecane, hydroxymethylethyldiethoxydecane, hydroxy Methyl ethyl di-n-propoxydecane, hydroxymethylethyl di-i-propoxy Decane, hydroxymethylethyldiethoxydecane, hydroxymethylethylbis(methoxyethoxy)decane, hydroxymethylphenyldimethoxydecane, hydroxymethylphenyldiethoxy Decane, hydroxymethylphenyl di-η-propoxydecane, hydroxymethylphenyl di-i-propoxydecane, hydroxymethylphenyldiethoxydecane, hydroxymethylphenyl di(a) Oxyethoxyethoxy)decane, 2-hydroxyethyltrimethoxydecane, 2-hydroxyethyltriethoxydecane, 2-hydroxyethyltri-n-propoxydecane, 2•hydroxyethyl-42 200903154 s-tri-propoxy decane, 2-hydroxyethyltriethoxydecane, 2-hydroxyethyltris(methoxyethoxy)decane, 2-hydroxyethylmethyldimethoxy Decane, 2-hydroxyethylmethyldiethoxydecane, 2-hydroxyethylmethyldi-η-propoxydecane, 2-hydroxyethylmethyldi-i-propoxydecane, 2-hydroxyl Ethylmethyldiethoxydecane, 2-hydroxyethylethyldimethoxydecane, 2-hydroxyethylethyldiethoxydecane, 2-hydroxyethylethyldi-n-propoxy Baseline, 2-hydroxyethylethyldi-i-propoxydecane, 2-hydroxyethylethyldiethoxydecane, 2-hydroxyethyl Ethyl bis(methoxyethoxy)decane, 2-hydroxyethylphenyldimethoxydecane, 2-hydroxyethylphenyldiethoxydecane, 2-hydroxyethylphenyldi-n- Propoxy decane, 2-hydroxyethylphenyl di-i-propoxy decane, 2-hydroxyethylphenyldiethoxy decane, 2-hydroxyethylphenyl bis(methoxyethoxy) ) decane, 3-hydroxypropyltrimethoxydecane, 3-hydroxypropyltriethoxydecane, 3-hydroxypropyltri-n-propoxydecane, 3-hydroxypropyltri-i-propoxy Decane, 3-hydroxypropyltriethoxydecane, 3-hydroxypropyltris(methoxyethoxy)decane, 3-hydroxypropylmethyldimethoxydecane, 3-hydroxypropylmethyl Diethoxydecane, 3-hydroxypropylmethyldi-η-propoxydecane, 3-hydroxypropylmethyldi-i-propoxydecane, 3-hydroxypropylmethyldiethoxycarbonyl Decane, 3-hydroxypropylethyldimethoxydecane, 3-hydroxypropylethyldiethoxydecane, 3-hydroxypropylethyldi-n-propoxydecane, 3-hydroxypropylethyl Di-i-propoxydecane, 3-hydroxypropylethyldiethoxydecane, 3-hydroxypropylethylbis(methoxyethoxy)decane, 3-hydroxypropane Phenyldimethoxydecane, 3-hydroxypropylphenyldiethoxydecane, 3-hydroxypropylphenyldi-η-propoxydecane, 3-hydroxypropylphenyldi-i-propoxy Baseline, 3-hydroxypropylphenyldiethoxydecane, 3-hydroxypropylphenylbis(methoxyethoxy)decane, 4-hydroxy-(p-hydroxyphenylcarbonyl-43 - 200903154 Oxy)benzyltrimethoxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzyltriethoxydecane, 4·hydroxy-(P-hydroxyphenylcarbonyloxy)benzyltri- N-propoxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzyltri-i-propoxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzyltriethyl醯oxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzyltris(methoxyethoxy)decane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzylmethyl Dimethoxydecane, 4-hydroxy-(P-hydroxyphenylcarbonyloxy)benzylmethyldiethoxydecane, 4-hydroxy-(P-hydroxyphenylcarbonyloxy)benzylmethyldi- Η-propoxydecane, 4-hydroxy-(indolyl-hydroxyphenylcarbonyloxy)benzylmethyldi-i-propoxydecane, 4-hydroxy-(P-hydroxyphenylcarbonyloxy)benzyl Methyldiethoxydecane, 4- Hydroxy-(P-hydroxyphenylcarbonyloxy)benzylethyldimethoxydecane, 4-hydroxy-(P-hydroxyphenylcarbonyloxy)benzylethyldiethoxydecane, 4-hydroxy- (p-Hydroxyphenylcarbonyloxy)benzylethyldi-η-propoxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzylethyldi-i-propoxydecane, 4-hydroxy-(ρ-hydroxyphenylcarbonyloxy)benzylethyldiethoxymethoxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzylethylbis(methoxyethoxy) Base) decane, 4-hydroxy-(P-hydroxyphenylcarbonyloxy)benzylphenyldimethoxydecane, 4-hydroxy-(ρ-hydroxybenyl peroxy)fluorene base-ethoxylate , 4-fluoro-(p-phenylphenylcarbonyloxy)benzylphenyldi-n-propoxydecane, 4-hydroxy-(p-hydroxyphenyl decyloxy)nonylphenyl- Propoxylate, 4-carbo-(p-phenylphenyloxy)benzylphenyldiethoxydecane, 4-hydroxy-(p-hydroxyphenylcarbonyloxy)benzylphenyl Di(methoxyethoxy)decane, etc.; specific examples of the compound (1) containing a thiol group, such as thiomethylmethyltrimethoxydecane, thiomethylmethyltriethoxydecane, and hydrogen sulfide base A-44 - 200903154 bis-n-propoxy decane, thiomethylmethyl tri-i-propoxy decane, thiomethylmethyltriethoxy decane, thiomethylmethyl tris (methoxy) Ethyloxy) decane, thiomethylmethyldimethoxydecane, thiomethylmethyldiethoxy decane, thiomethylmethyldi-n-propoxy decane, hydrogen Thiomethylmethyldi-i-propoxydecane, thiomethylmethyldiethoxymethoxydecane, thiomethylethyldimethoxydecane, thiomethylmethylethyl Ethoxylate sand, thiomethylmethylethyl-n-propoxy sand, thiomethylmethyldi-i-propoxy decane, thiomethylethyldiethyl oxime Base decane, thiomethylmethyl-(methoxyethoxy)5 sylvestre, sulfomethylmethyldimethoxy decane, thiomethylphenyldiethoxy decane, hydrogen sulphur Methyl phenyl di-η-propoxy decane, thiomethyl phenyl di-i-propoxy decane, thiomethyl phenyl diethoxy decane, thiomethyl benzene Di-(methoxyethoxy)decane, 2-hydrothioethyltrimethoxydecane, 2- Thioethyl triethoxy decane, 2-hydrothioethyl tri-n-propoxy decane, 2-hydrothioethyl tri-i-propoxy decane, 2-hydrothioethyl three Ethoxy decane, 2-hydrothioethyltris(methoxyethoxy)decane, 2•hydrothioethylmethyldimethoxydecane, 2-hydrothioethylmethyldiethyl Oxydecane, 2-hydrothioethylmethyldi-n-propoxydecane, 2-hydrothioethylmethyl_>-i-propoxy sylvestre, 2-sulfoethyl Methyl __acetoxy oxalate, 2-hydrothioethylethyldimethoxydecane, 2-hydrothioethylethyldiethoxylate, 2-sulfoethylethyl _Propoxy oxalate, 2-aminothioethylethyldi-i-propoxy decane, 2-hydrothioethylethyldiethoxy decane, 2-hydrothioethylethyl Bis(methoxyethoxy)decane, 2-hydrothioethylphenyl-methoxylate, 2-chlorothioethylphenyl-ethoxy-45 - 200903154 decane, 2-hydrogen sulphide Ethyl ethyl phenyl di-n-propoxy decane, 2-hydrothioethyl phenyl di-i-propoxy decane, 2-hydrothioethyl phenyl diethoxy decane, 2 - Thioethyl-ethyl-mono(methyl-ethoxy) sand, 3-sulfopropyltrimethoxydecane, 3-hydrothiopropyltriethoxydecane, 3-hydrothiopropyltri -η-propoxydecane, 3·hydrothiopropyltri-i-propoxydecane, 3-hydrothiopropyltriethoxymethoxydecane, 3-hydrothiopropyltris(methoxy) Ethoxy)decane, 3-hydrothiopropylmethyldimethoxydecane, 3-hydrothiopropylmethyldiethoxydecane, 3-hydrothiopropylmethyldi-n-propyl Oxydecane, 3-hydrothiopropylmethyldi-i-propoxydecane, 3-hydrothiopropylmethyldiethoxymethoxydecane, 3-hydrothiopropylethyldimethoxy Basear, 3-sulfopropylethyl-ethoxylate, 3-sulfopropylethyl__-η-propoxydecane, 3-hydrothiopropylethyldi-i -propoxydecane, 3-hydrothiopropylethyldiethoxydecane, 3-hydrothiopropylethylbis(methoxyethoxy)decane, 3-hydrothiopropylbenzene Dimethoxy decane, 3-hydrothiopropyl phenyl diethoxy decane, 3-hydrothiopropyl phenyl di-η-propoxy decane, 3-hydrogen sulphide Propyl phenyl di-i-propoxy decane, 3-hydrothiopropyl propyl-acetoxy oxalate, 3-sulfopropyl phenyl-(methoxyethoxy) decane, etc.; Specific examples of the isocyanate group-containing compound (1) include, for example, isocyanate methyltrimethoxydecane, isocyanate methyltriethoxydecane, isocyanate methyltri-n-propoxydecane, isocyanate methyltri-i-propyl Oxy decane, isocyanate methyl triethoxy decane, isocyanate methyl tris(methoxyethoxy) decane, isocyanate methyl methyl dimethoxy decane, isocyanate methyl methyl diethoxy decane, Isocyanate methylmethyl-46 - 200903154 Di-η-propoxydecane, isocyanate methylmethyldi-i-propoxydecane, isocyanate methylmethyldiethoxydecane, isocyanate methylethyl Methoxy decane, isocyanate methyl ethyl diethoxy decane, isocyanate methyl ethyl di-η-propoxy decane, isocyanate methyl ethyl di-i-propoxy decane, isocyanate methyl ethyl Ethoxy decane, isocyanate methyl ethyl bis (methoxy Ethoxy)decane, isocyanate methylphenyldimethoxydecane, isocyanate methylphenyldiethoxydecane, isocyanate methylphenyl di-n-propoxydecane, isocyanate methylphenyl di-i - propoxy decane, isocyanate methyl phenyl diethoxy decane, isocyanate methyl phenyl bis (methoxy ethoxy) decane, 2-isocyanate ethyl trimethoxy decane, 2-isocyanate ethyl three Ethoxy decane, 2-isocyanate ethyl tri-n-propoxy decane, 2-isocyanate ethyl tri-i-propoxy decane, 2-isocyanate ethyltriethoxy decane, 2-isocyanate ethyl Tris(methoxyethoxy)decane, 2-isocyanate ethylmethyldimethoxydecane, 2-isocyanate ethylmethyldiethoxydecane, 2-isocyanate ethylmethyldi-n-propoxy Baseline, 2-isocyanate ethylmethyldi-i-propoxydecane, 2-isocyanate ethylmethyldiethoxydecane, 2-isocyanate ethylethyldimethoxydecane, 2-isocyanate Ethyl ethyl diethoxy decane, 2-isocyanate ethyl ethyl di-n-propoxy decane, 2-iso Cyanate Ethylethyldi-i-propoxydecane, 2-isocyanate ethylethyldiethoxydecane, 2-isocyanate ethylethylbis(methoxyethoxy)decane, 2 - Isocyanate ethyl phenyl dimethoxy decane, 2-isocyanate ethyl phenyl diethoxy decane, 2-isocyanate ethyl phenyl di- η - propoxy decane, 2-isocyanate ethyl phenyl di-i -propoxydecane, 2-isocyanate ethylphenyldiethoxymethoxydecane-47 - 200903154, 2-isocyanate ethylphenyl bis(methoxyethoxy)decane, 3-isocyanate propyl trimethoxy Decane, 3-isocyanate propyl triethoxy decane, 3-isocyanate propyl tri-n-propoxy decane, 3-isocyanate propyl tri-i-propoxy decane, 3-isocyanate propyl triethylene oxime Basear, 3-isocyanate propyl tris(methoxyethoxy)decane, 3-isocyanate propylmethyldimethoxydecane, 3-isocyanate propylmethyldiethoxydecane, 3-isocyanate propyl Methyl di-n-propoxydecane, 3-isocyanate propylmethyldi-i-propoxydecane, 3-isocyanate propylmethyl Ethoxy decane, 3-isocyanate propyl ethyl dimethoxy decane, 3-isocyanate propyl ethyl diethoxy decane, 3-isocyanate propyl ethyl di-η-propoxy decane, 3- Isocyanate propylethyldi-i-propoxydecane, 3-isocyanate propylethyldiethoxydecane, 3-isocyanate propylethylbis(methoxyethoxy)decane, 3-isocyanate Phenyl dimethoxy decane, 3-isocyanate propyl phenyl diethoxy decane, 3-isocyanate propyl phenyl di-η-propoxy decane, 3-isocyanate propyl phenyl di-i-propyl Specific examples of the compound (1) containing an amine group, such as oxydecane, 3-isocyanate propyl phenyldiethoxy decane, 3-isocyanate propyl phenyl bis(methoxyethoxy) decane, etc. There are aminomethyltrimethoxydecane, aminomethyltriethoxydecane, aminomethyltri-n-propoxydecane, aminomethyltri-i-propoxydecane, aminomethyl Triethoxydecane, aminomethyltris(methoxyethoxy)decane, aminomethylmethyldimethoxydecane, aminomethylmethyldiethyl Baseline, aminomethylmethyldi-n-propoxydecane, aminomethylmethyldi-i-propoxydecane, aminomethylmethyldiethoxydecane, aminomethyl Ethyldimethoxyindole-48 - 200903154 alkane, aminomethylethyldiethoxydecane, aminomethylethyldi-n-propoxydecane, aminomethylethyldi-i- Propoxydecane, Aminomethylethyldiethoxydecane, Aminomethylethylbis(methoxyethoxy)decane, Aminomethylphenyldimethoxydecane, Amino A Phenyldiethoxydecane, aminomethylphenyldi-n-propoxydecane, aminomethylphenyldi-i-propoxydecane, aminomethylphenyldiethoxycarbonyl Decane, aminomethylphenyl bis(methoxyethoxy)decane, 2-aminoethyltrimethoxydecane, 2-aminoethyltriethoxydecane, 2-aminoethyltrienyl- Η-propoxydecane, 2-aminoethyltri-i-propoxydecane, 2-aminoethyltriethoxydecane, 2-aminoethyltris(methoxyethoxy)矽, 2-aminoethylmethyldimethoxy sand, 2-aminoethyl methyl _ ethane-based sand , 2-aminoethylmethyldi-η-propoxydecane, 2-aminoethylmethyldi-i-propoxydecane, 2-aminoethylmethyldiethoxydecane 2-Aminoethylethyldimethoxydecane, 2-aminoethylethyldiethoxydecane, 2-aminoethylethyldi-n-propoxydecane, 2-amino group Ethylethyldi-i-propoxydecane, 2-aminoethylethyldiethoxydecane, 2-aminoethylethylbis(methoxyethoxy)decane, 2-amine Ethyl ethyl methoxy dimethoxy decane, 2-aminoethyl phenyl diethoxy decane, 2-aminoethyl phenyl di- η - propoxy decane, 2-aminoethyl phenyl —>-i-propoxy oxime, 2-aminoethylphenyl-ethoxyxydecane, 2-aminoethylphenylbis(methoxyethoxy)decane, 3-amine Propyltrimethoxydecane, 3-aminopropyltriethoxydecane, 3-aminopropyltri-n-propoxydecane, 3-aminopropyltri-i-propoxydecane, 3-Aminopropyltriethoxydecane, 3-aminopropyltris(methoxyethoxy)decane, 3-aminopropylmethyldimethoxydecane, 3-aminopropyl -49- 200903154 Diethoxydecane, 3-aminopropylmethyldi-n-propoxydecane, 3-aminopropylmethyldi-i-propoxydecane, 3-aminopropyl Methyldiethoxydecane, 3-aminopropylethyldimethoxydecane, 3-aminopropylethyldiethoxydecane, 3-aminopropylethyldi-n- Propoxydecane, 3-aminopropylethyldi-i-propoxydecane, 3-aminopropylethyldiethoxydecane, 3-aminopropylethyldi(methoxy) Ethoxy)decane, 3-aminopropylphenyldimethoxydecane, 3-aminopropylphenyldiethoxydecane, 3-aminopropylphenyldi-n-propoxydecane , 3-aminopropylphenyldi-i-propoxydecane, 3-aminopropylphenyldiethoxymethoxydecane, 3-aminopropylphenylbis(methoxyethoxy) Decane, N-2-(aminoethyl)-3-aminopropyltrimethoxydecane, N-2-(aminoethyl)-3-aminopropyltriethoxydecane, N-2 -(Aminoethyl)-3-aminopropyltri-n-propoxydecane, N-2-(aminoethyl)-3-aminopropyltri-i-propoxydecane, hydrazine -2-(aminoethyl)-3-aminopropyl Ethoxy decane, N-2-(aminoethyl)-3-aminopropyltris(methoxyethoxy)decane, N-2-(aminoethyl)-3-aminopropyl Methyldimethoxydecane, N-2-(aminoethyl)-3 ·aminopropylmethyldiethoxydecane, N-2-(aminoethyl)-3-aminopropyl Methyl di-n-propoxydecane, N-2-(aminoethyl)-3-aminopropylmethyldi-i-propoxydecane, indole-2-(aminoethyl) 3-aminopropylmethyldiethoxymethoxydecane, N-2-(aminoethyl)-3-aminopropylethyldimethoxydecane, N-2-(aminoethyl) )-3-Aminopropylethyldiethoxydecane, N-2-(aminoethyl)-3-aminopropylethyl-propoxylate, N-2-(Amino B) 3-aminopropylethyldi-i-propoxydecane, N-2-(aminoethyl)-3-aminopropylethyldiethoxypropane, N-2- (amine-50- 200903154 ylethyl)_3_aminopropylethyl bis(methoxyethoxy)decane, N-2-(aminoethyl)-3-aminopropyl phenyl dimethyl Oxydecane, N-2-(aminoethyl)-3-aminopropylphenyldiethoxydecane, N-2-(aminoethyl)-3-aminopropylphenyl Di-η-propoxydecane, Ν·2-(aminoethyl)-3-aminopropylphenyldi-i-propoxydecane, indole-2-(aminoethyl)-3- Aminopropyl phenyl diethoxy decane, N-2-(aminoethyl)-3-aminopropyl phenyl bis(methoxyethoxy) decane, N-phenyl-3- Aminopropyltrimethoxydecane, N-phenyl-3-aminopropyltriethoxydecane, N-phenyl-3-aminopropyltri-n-propoxydecane, N-phenyl 3-aminopropyltri-i-propoxydecane, N-phenyl-3-aminopropyltriethoxymethoxydecane, N-phenyl-3-aminopropyltris(methoxy) Ethoxy)decane, N-phenyl-3-aminopropylmethyldimethoxydecane, N-phenyl-3-aminopropylmethyldiethoxydecane, N-phenyl-3 -Aminopropylmethyldi-n-propoxydecane, N-phenyl-3-aminopropylmethyldi-i-propoxydecane, fluorenyl-phenyl-3-aminopropyl Ethylene decyloxydecane, N-phenyl-3-aminopropylethyldimethoxydecane, N-phenyl-3-aminopropylethyl-ethoxylate, N-benzene Alkyl-3-aminopropylethyl-·_η-propoxy oxalate, N-benzyl-3-aminopropylethyl _.  - i-propoxydecane, N-phenyl-3-aminopropylethyldiethoxydecane, N-phenyl-3-aminopropylethylbis(methoxyethoxy) Decane, N-phenyl-3-aminopropyl phenyl dimethoxy decane, N-phenyl-3-aminopropyl phenyl diethoxy decane, N-phenyl-3-aminopropyl Phenyl phenyl-n-propoxy decane, fluorenyl-phenyl-3-aminopropylphenyldi-i-propoxy decane, fluorenyl-phenyl-3-aminopropyl-based Base sand, N-phenyl-3-aminopropyl-based bis(methoxyethoxy)decane, 3-trimethoxymethylidene-N- (1,3-51-200903154 dimethyl -butylene)propylamine, 3-triethoxycarbamido-N-(1,3-dimethyl-butylene)propylamine, 3-tri-n-propoxymethylindenyl-N -(1,3-Dimethyl-butylene)propylamine; etc.; specific examples of the compound (1) containing a urea group, for example, ureidomethyltrimethoxydecane, ureidomethyltriethoxydecane , ureidomethyltri-n-propoxydecane, ureidomethyltri-i-propoxydecane, ureidomethyltriethoxydecane, ureidomethyltris(methoxyethoxy) ) decane, urea base Methyldimethoxydecane, ureidomethylmethyldiethoxydecane, ureidomethylmethyldi-n-propoxydecane, ureidomethylmethyldi-i-propoxy decane, Ureidomethylmethyldiethoxydecane, ureidomethylethyldimethoxydecane, ureidomethylethyldiethoxydecane, ureidomethylethyldi-n-propoxy Decane, ureidomethylethyldi-i-propoxydecane, ureidomethylethyldiethoxydecane, ureidomethylethylbis(methoxyethoxy)decane, urea-based Phenyldimethoxydecane, ureidomethylphenyldiethoxydecane, ureidomethylphenyldi-n-propoxydecane, ureidomethylphenyldi-i-propoxydecane , ureidomethylphenyldiethoxydecane, ureidomethylphenyl bis(methoxyethoxy)decane, 2-ureidoethyltrimethoxydecane, 2-ureidoethyltriethyl Oxydecane, 2-ureidoethyltri-n-propoxydecane, 2-ureidoethyltri-i-propoxydecane, 2-ureidoethyltriethoxypropane, 2-urea Ethyltris(methoxyethoxy)decane, 2-ureidoethylmethyldimethoxy-5 , 2-carboxymethylethyl-ethoxylate, 2-cyanoethylmethyldi-n-propoxydecane, 2-ureidoethylmethyldi-i-propoxydecane, 2-Urytylethylmethyldiethoxydecane, 2-Urylacylethylethyldimethoxydecane, 2-ureidoethylethyldiethoxydecane, 2-ureidoethyl B -52- 200903154 Di-n-propoxydecane, 2-ureidoethylethyldi-i-propoxydecane, 2-ureidoethylethyldiethoxydecane, 2-ureido Ethylethyl bis(methoxyethoxy) litmus, 2-cyanoethylphenyl _ methoxy broth, 2-n-ethylethyl epoxide ethoxylate 5 oxime, 2-vein Ethylethyl keto- _n-propoxy samarium, 2- ureidoethylphenyl bis-i-propoxy decane, 2- ureidoethyl phenyl ethane oxy decane, 2-ureido Phenyl phenyl bis(methoxyethoxy) decane, 3-ureidopropyl trimethoxy decane, 3- ureidopropyl triethoxy decane, 3- ureidopropyl tri-n-propoxy Decane, 3-ureidopropyltri-i-propoxydecane, 3-ureidopropyltriethoxydecane, 3-ureidopropyltris(methoxyethoxy)decane, 3-urea Base Methyldimethoxydecane, 3-ureidopropylmethyldiethoxydecane, 3-ureidopropylmethyldi-n-propoxydecane, 3-ureidopropylmethyldi- I-propoxydecane, 3-ureidopropylmethyldiethoxydecane, 3-ureidopropylethyldimethoxydecane, 3-ureidopropylethyldiethoxydecane, 3-ureidopropylethyldi-η-propoxydecane, 3-ureidopropylethyldi-i-propoxydecane, 3-ureidopropylethyldiethoxypropane, 3 -ureidopropylethylbis(methoxyethoxy)decane, 3-ureidopropylphenyldimethoxydecane, 3-ureidopropylphenyldiethoxydecane, 3-ureido Propyl phenyl di-n-propoxy decane, 3-ureidopropyl phenyl di-i-propoxy fluorene, 3-propyl propyl base _ ethyl ethoxylate, 3 - service base Propyl phenyl _.  (methoxyethoxy) decane, etc.; specific examples of the compound (1) containing a styryl group, for example, styryltrimethoxydecane, styryltriethoxydecane, styryltris-n- Propoxy decane, styryl tri-i-propoxy decane, styryltriethoxy decane, styryl tris(methoxyethoxy)decane, benzene-53 - 200903154 ethylene base —-methoxy oxime, phenylethyl methyl-ethoxy oxime, styrylmethyldi-n-propoxydecane, styrylmethyldi-i-propoxydecane , styrylmethyldiethoxydecane, styrylethyldimethoxydecane, styrylethyldiethoxydecane,styrylethyldi-n-propoxydecane, benzene Vinylethyldi-i-propoxydecane, styrylethyldiethoxydecane,styrylethylbis(methoxyethoxy)sand, phenylethylphenylene Oxylate sand, styryl phenyl diethoxy decane, styryl phenyl di- η-propoxy decane, styryl phenyl di-i-propoxy decane, styryl phenyl Silane acetyl group, a styryl phenyl bis (methoxyethoxy) silane-like. Among these, a compound (1) containing an epoxy group, an oxocyclobutyl group, a hydroxyl group or a thiol group is preferably used, and from the viewpoint of reactivity with the [A] component and storage stability, a 3-ring is particularly preferred. Oxypropoxypropyltrimethoxydecane, 3-glycidoxypropyltriethoxydecane, 3-glycidoxypropylmethyldimethoxydecane, 3-epoxypropoxy Propylmethyldiethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltriethoxydecane (3-ethyloxocyclobutane-3-yl)propyltrimethoxydecane, (3-ethyloxycyclobutane-3-yl)propyltriethoxydecane, 3-hydrothiopropylpropane Trimethoxy decane, 3-hydrothiopropyltriethoxy decane. Specific examples of the compound (2) are, for example, tetramethoxydecane, tetraethoxydecane (commonly known as TEOS), tetra-n-propoxydecane, tetraisopropoxydecane, tetra-n-butoxydecane tetraoxane. Oxydecane; such as methyltrimethoxydecane, methyltriethoxydecane, methyltri-n-propoxydecane, ethyltriethoxy-54-200903154 decane, cyclohexyltriethoxydecane Monoalkyltrialkoxydecane; such as phenyltriethoxydecane, naphthyltriethoxydecane, 4-chlorophenyltriethoxydecane, 4-cyanophenyltriethoxydecane, 4 - Aminophenyl triethoxy decane, 4-nitrophenyl triethoxy decane, 4-methylphenyl triethoxy decane, 4-hydroxyphenyl triethoxy decane monoaryl Alkoxydecane; such as phenoxytriethoxydecane, naphthyloxytriethoxydecane, 4-chlorophenoxytriethoxydecane, 4-cyanophenyltrioxyethoxysilane, 4-aminophenyloxytriethoxydecane, 4-nitrophenyloxytriethoxydecane, 4-methylphenyloxytriethoxydecane, 4-hydroxyphenyloxy III Ethoxy decane monoaryloxy three Oxydecane; such as monohydroxytrimethoxydecane, monohydroxytriethoxydecane, monohydroxytri-n-propoxydecane, monohydroxytrialkoxydecane: such as dimethyldimethoxydecane, Dialkyldioxane of methyl diethoxy decane, dimethyl di-η-propoxy decane, methyl (ethyl) diethoxy decane, methyl (cyclohexyl) diethoxy decane a monoalkyl monoaryl dialkoxy decane such as methyl (phenyl) diethoxy decane; a diaryl dialkoxy decane such as diphenyldiethoxy decane; such as diphenyl One of the oxydiethoxy sand yards, the oxy-anthracene sands; such as methyl (phenoxy).  Monoalkyl monoaryloxy dialkoxy decane of ethoxy decane; monoaryl aryl aryl dialkoxy decane such as phenyl (phenoxy) diethoxy decane; a hydroxy decane, a dihydroxydiethoxy decane, a dihydroxy dialkoxy decane of dihydroxy di-n-propoxy decane; a monoalkyl monohydroxy dioxane such as methyl (hydroxy) dimethoxy decane; a methoxy decane; a monoaryl monohydroxy dialkoxy decane such as phenyl (hydroxy) dimethoxy decane; such as trimethyl methoxy decane, trimethyl ethoxy decane, trimethyl- η- a trialkylmonoalkoxy decane of propyloxydecane, bis-55-200903154 methyl (ethyl) ethoxy decane, dimethyl (cyclohexyl) ethoxy decane; such as dimethyl (phenyl) a dialkyl monoaryl monoalkoxy decane of ethoxy decane; a monoalkyldiaryl monoalkoxy decane such as methyl (diphenyl) ethoxy decane; such as a triphenyloxy ethoxy group; a triaryloxymonoalkoxy decane of decane; a monoalkyldiaryloxymonoalkoxy decane such as methyl (diphenoxy) ethoxy decane; such as phenyl (diphenoxy) a monoaryldiaryloxymonoalkoxydecane of ethoxy decane; a dialkylmonoaryloxymonoalkoxy decane such as dimethyl(phenoxy)ethoxy decane; such as diphenyl a diarylmonoaryloxymonoalkoxydecane of (phenoxy)ethoxyoxane; a monoalkylmonoarylmonoaryloxy group such as methyl(phenyl)(phenoxy)ethoxydecane Monoalkoxydecane; such as trihydroxymethoxydecane, trihydroxyethoxysilane, trihydroxy-η-propoxydecane, trihydroxymonoalkoxydecane. Among these, tetramethoxy decane, tetraethoxy decane, methyl trimethoxy decane, methyl triethoxy decane, and phenyl trimethoxy are preferable from the viewpoints of reactivity and adhesion to the substrate. Base decane, phenyltriethoxy decane, dimethyl dimethoxy decane, dimethyl diethoxy decane, diphenyl dimethoxy decane, diphenyl diethoxy decane. These compounds can be arbitrarily composed and used in any of a variety of compounds. The above compound is subjected to a cohydrolysis reaction to form a decane oligomer I of the [C] component used in the present invention. The hydrolysis reaction is preferably carried out in a suitable solvent. Such solvents are, for example, methanol, ethanol, η-propanol, isopropanol, η-butanol, isobutanol, t-butanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether. , C-56-200903154 A water-soluble solvent of glycol methyl ether acetate, tetrahydrofuran, dioxane, acetonitrile or an aqueous solution of these. These water-soluble solvents are removed in a subsequent step 'thus, preferably methanol, ethanol, η-propanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl hydride, tetrahydrofuran The lower boiling point one is more preferably a ketone of acetone, methyl ethyl ketone or methyl isobutyl ketone from the viewpoint of the glutamic solubility of the raw material, and is preferably methyl isobutyl ketone. The hydrolysis reaction of the oxirane oligomer I of the synthesis of the component [C] is preferably carried out in the presence of an acid catalyst or a catalyst. The acid catalyst may, for example, be hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acidic ion exchange resin, various Lewis acids or the like. Examples of the alkali catalyst include ammonia, a primary amine, a secondary amine, a tertiary amine, a nitrogen-containing aromatic compound such as pyridine, a basic ion exchange resin, a hydroxide such as sodium hydroxide, a carbonate such as potassium carbonate, sodium acetate, or the like. Carboxylates, various Lewis bases, and the like. The amount of water used, the reaction temperature, and the reaction time are appropriately set. For example, the following conditions can be employed. The amount of water used is 1 mole of the total of the alkoxy group and the halogen atom in the compound represented by the above formula (1) or (2), and is used. The following is preferably less than 1 mole, more preferably less than 9 moles. The reaction temperature is 40 to 200. (:, preferably 50 to 150. 反应. The reaction time is 30 minutes to 2 hours, more preferably 1 to 1 2 hours. The above methane oxide oligomer II is represented by the following formula (9). 57- ,22200903154

R 21. Ο Ό—Si· ΟR 21. Ο Ό—Si· Ο

R 24R 24

Ό——R m 23 (9) 式中R21〜R24係相互獨立表示氫原子、烷基 、或下述式（10)表示之氧環丁基，m係1〜10 但是R21〜R24之至少1個係下述式（10 )表示之 、環烷基 之整數。 氧環丁基 R14 (10) R15 R16 式中R25、R13、R14、R15及R16係相互獨立 子、氟原子、碳數1〜4之烷基、苯基或碳數1〜 烷基，1係1〜6之整數。 這些矽氧烷低聚物可藉由將下述式（1 1 )及 示之烷氧基矽烷經水解來製造。 Si(RI7)p(OR]8)q· --(11) 式中R17係表示含有氧環丁基之取代基，R18係 子或1價有機基，P係1〜3之整數，q各自爲（ 25 p13Ό——R m 23 (9) wherein R21 to R24 each independently represent a hydrogen atom, an alkyl group, or an oxocyclobutyl group represented by the following formula (10), m is 1 to 10, but at least 1 of R21 to R24 Each is an integer represented by the following formula (10) and a cycloalkyl group. Oxycyclobutyl R14 (10) R15 R16 wherein R25, R13, R14, R15 and R16 are independent of each other, a fluorine atom, an alkyl group having 1 to 4 carbon atoms, a phenyl group or a carbon number of 1 to an alkyl group, 1 type An integer from 1 to 6. These oxirane oligomers can be produced by hydrolyzing the following formula (1 1 ) and the alkoxy decane shown. Si(RI7)p(OR)8)q· --(11) wherein R17 represents a substituent containing an oxocyclobutyl group, an R18 group or a monovalent organic group, and a P group of 1 to 3 integers, q each For ( 25 p13

表7]^氣原 4之全氟 (12 )表 表不氣原 I〜3之整 -58- 200903154 數。但是p+q=4。Table 7] ^ gas original 4 perfluoro (12) table not gas source I ~ 3 of the whole -58- 200903154 number. But p+q=4.

Si(R19)x(OR20)4-x· · ( 12) 式中R1 9、R2()係表示不含氧環丁基之取代基，可相同或不 同，各自爲氫原子或1價有機基，X係〇〜3之整數。 上述式（1 1 )及（1 2 )之化合物係反應性矽氧烷低聚 物。反應性矽氧烷低聚物係在具有氧環丁烷環與倍半矽氧 烷構造之聚矽氧烷中導入聚矽氧構造者，降低該聚矽氧烷 中之氧環丁基濃度，在不降低倍半矽氧烷化合物之分子量 的情況下，爲了降低黏度，或藉由降低交聯密度使硬化收 縮率下降，對於硬化物賦予密著性、耐藥品性，或對於硬 化物賦予柔軟性所導入的。本發明之反應性矽氧烷低聚物 較佳爲具有直鏈狀或分支之線狀聚矽氧。 具有氧環丁基之化合物（1 1 )的具體例，當p= 1時， 例如有（氧環丁烷-3 -基）甲基三甲氧基矽烷、（氧環丁 烷-3 -基）甲基三乙氧基矽烷、（氧環丁烷-3-基）甲基三-η-丙氧基矽烷、（氧環丁烷-3-基）甲基三-i-丙氧基矽烷、 (氧環丁烷-3-基）甲基三乙醯氧基矽烷、（氧環丁烷- 3-基）甲基甲基二甲氧基矽烷、（氧環丁烷-3-基）甲基甲基 二乙氧基矽烷、（氧環丁烷-3-基）甲基甲基二-η-丙氧基 矽烷、（氧環丁烷-3-基）甲基甲基二-i-丙氧基矽烷、（ 氧環丁烷-3-基）甲基甲基二乙醯氧基矽烷、（氧環丁烷-3 -基）甲基乙基二甲氧基矽烷、（氧環丁烷-3 -基）甲基乙 基二乙氧基矽烷、（氧環丁烷-3-基）甲基乙基二-η-丙氧 基矽烷、（氧環丁烷-3-基）甲基乙基二-i-丙氧基矽烷、 -59- 200903154 (氧環丁烷-3-基）甲基乙基二乙醯氧基矽烷、（氧環丁 烷-3-基）甲基苯基二甲氧基矽烷、（氧環丁烷-3-基）甲 基苯基二乙氧基矽烷、（氧環丁烷-3-基）甲基苯基二-n-丙氧基矽烷、（氧環丁烷-3-基）甲基苯基二-i-丙氧基矽 烷、（氧環丁烷-3-基）甲基苯基二乙醯氧基矽烷等。 p = 2時，例如有二（氧環丁烷-3-基）甲基二甲氧基矽 烷、二（氧環丁烷-3-基）甲基二乙氧基矽烷、二（氧環丁 烷-3-基）甲基二-η-丙氧基矽烷、二（氧環丁烷-3-基）甲 基二-i-丙氧基矽烷、二（氧環丁烷-3-基）甲基二乙醯氧 基矽烷、二（氧環丁烷-3 -基）甲基甲基甲氧基矽烷、二（ 氧環丁烷-3-基）甲基甲基乙氧基矽烷、二（氧環丁烷- 3-基）甲基甲基-η-丙氧基矽烷、二（氧環丁烷-3-基）甲基 甲基-i-丙氧基矽烷、二（氧環丁烷-3-基）甲基甲基乙醯 氧基矽烷、二（氧環丁烷-3 -基）甲基乙基甲氧基矽烷、二 (氧環丁烷-3 -基）甲基乙基乙氧基矽烷、二（氧環丁烷-3-基）甲基乙基-η-丙氧基矽烷、二（氧環丁烷-3-基）甲 基乙基-i-丙氧基矽烷、二（氧環丁烷-3-基）甲基乙基乙 醯氧基矽烷、二（氧環丁烷-3 -基）甲基苯基甲氧基矽烷、 二（氧環丁烷-3 -基）甲基苯基乙氧基矽烷、二（氧環丁 垸-3 -基）甲基本基- η-丙氧基砂院、一·（氧環丁院-3 -基） 甲基苯基-i-丙氧基矽烷、二（氧環丁烷-3-基）甲基苯基 乙醯氧基矽烷等。 p = 3時，例如有三（氧環丁烷-3-基）甲基甲氧基矽烷 、三（氧環丁烷-3-基）甲基乙氧基矽烷、三（氧環丁烷- -60- 200903154 3-基）甲基-η-丙氧基矽烷、三（氧環丁烷-3-基）甲基-i-丙氧基矽烷、三（氧環丁烷-3 -基）甲基乙醯氧基矽烷等。 具有氧環丁基之化合物（1 2 )的具體例，例如有四甲 氧基矽烷、四乙氧基矽烷、甲基三甲氧基矽烷、甲基三乙 氧基矽烷、甲基三丙氧基矽烷、甲基三異丙氧基矽烷、乙 基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三乙氧基矽烷 、丁基三甲氧基矽烷、環乙基三甲氧基矽烷、三乙氧基矽 烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、二甲基二乙 氧基矽烷、二甲基二乙氧基矽烷、二乙基二甲氧基矽烷、 二乙基二乙氧基矽烷、二苯基二甲氧基矽烷、二苯基二乙 氧基矽烷、甲基苯基二甲氧基矽烷、甲基苯基二乙氧基矽 烷、三甲基矽烷醇、三乙基矽烷醇、三丙基矽烷醇、三丁 基矽烷醇、三苯基矽烷醇、三甲基甲氧基矽烷、三甲基乙 氧基矽烷、三乙基甲氧基矽烷、三乙基乙氧基矽烷、三丙 基甲氧基矽烷、三丙基乙氧基矽烷、三甲基甲矽烷基乙酸 酯、三甲基甲矽烷基苯酸酯、三乙基甲矽烷基乙酸酯、三 乙基甲矽烷基苯酸酯、苄基二甲基甲氧基矽烷、苄基二甲 基乙氧基矽烷、二苯基甲氧基甲基矽烷、二苯基乙氧基甲 基矽烷、乙醯基三苯基矽烷、乙氧基三苯基矽烷、六甲基 二矽氧烷、六乙基二甲基二矽氧烷、六丙基二矽氧烷、 1，3-二丁基-1,1,3,3-四甲基二矽氧烷、1，3-二苯基-1,1,3,3-四甲基二矽氧烷、1,3 -二甲基-1,1,3,3 -四苯基二矽氧烷等 -61 - 200903154 其他成分 本發明之敏輻射線性樹脂組成物係含有上述共聚物 [A]、[B]及[C]成分爲必須成分，但是必要時可含有[D]感 熱性酸生成化合物、[E]具有至少一個乙烯性不飽和雙鍵 之聚合性化合物、[F]與共聚物[A]不同之其他之環氧樹脂 、[G]界面活性劑、或[H]黏著助劑。 上述[D]感熱性酸生成化合物可用於提高耐熱性或硬 度。其具體例如锍鹽、苯并噻唑鑰鹽、銨鹽、錢鹽等之鑷 。 上述锍鹽之具體例如烷基锍鹽、苄基鏑鹽、二苄基锍 鹽、取代苄基锍鹽等。 這些之具體例，烷基锍鹽例如有4 -乙醯基苯基二甲基 毓六氟銻酸鹽、4-乙醯羥基苯基二甲基鏑六氟砷酸鹽、二 甲基-4-(苄氧基羰氧基）苯基锍六氟銻酸鹽、二甲基-4-(苯甲醯氧基）苯基锍六氟銻酸鹽、二甲基-4-(苯甲醯氧 基）苯基锍六氟砷酸鹽、二甲基-3-氯-4-乙醯氧基苯基锍 六氟銻酸鹽等； 苄基锍鹽例如有苄基-4-羥基苯基甲基锍六氟銻酸鹽、 苄基-4-羥苯基甲基鏑六氟磷酸鹽、4-乙醯氧基苯基苄基甲 基鏡六氟銻酸鹽、苄基-4-甲氧基苯基甲基鏑六氟銻酸鹽、 苄基-2-甲基-4-羥苯基甲基锍六氟銻酸鹽、苄基-3-氯-4-羥 苯基甲基锍六氟砷酸鹽、4-甲氧基苄基-4-羥苯基甲基毓六 氟磷酸鹽等； 二苄基鏑鹽例如二苄基-4-羥苯基鏑六氟銻酸鹽、二苄 -62- 200903154 基-4-羥苯基锍六氟磷酸鹽、4-乙醯氧基苯基二苄基鏑六氟 銻酸鹽、二苄基-4-甲氧基苯基毓六氟銻酸鹽、二苄基-3-氯-4-羥苯基锍六氟砷酸鹽、二苄基-3-甲基-4-羥基-5-tert-丁基苯基鏑六氟銻酸鹽、苄基-4-甲氧基苄基-4-羥苯基锍 六氟磷酸鹽等； 取代苄基鏑鹽例如對氯苄基-4-羥苯基甲基毓六氟銻酸 鹽、對硝基苄基-4-羥苯基甲基鏑六氟銻酸鹽、對氯苄基- 4 -羥苯基甲基锍六氟磷酸鹽、對硝基苄基-3 -甲基-4 ·羥苯 基甲基锍六氟銻酸鹽、3,5-二氯苄基-4-羥苯基甲基锍六氟 銻酸鹽、鄰-氯苄基-3-氯-4-羥苯基甲基锍六氟銻酸鹽等。 上述苯并噻唑鐺鹽之具體例有3-苄基苯并噻唑鐺六氟 銻酸鹽、3 -苄基苯并噻唑鑷六氟磷酸鹽、3 -苄基苯并噻唑 鎗四氟硼酸鹽、3 -(對-甲氧基苄基）苯并噻唑鑰六氟銻酸 鹽、3 -苄基-2 -甲基硫代苯并噻唑鎗六氟銻酸鹽、3 -苄基- 5 -氯苯并噻唑鑰六氟銻酸鹽等之苄基苯并噻唑鎗。 這些當中，較佳爲使用锍鹽及苯并噻唑鎗，特別是4-乙醯氧基苯基二甲基毓六氟砷酸鹽、苄基-4 -羥苯基甲基锍 六氟銻酸鹽、4-乙醯氧基苯基苄基甲基锍六氟銻酸鹽、二 苄基-4-羥苯基鏑六氟銻酸鹽、4-乙醯氧基苯基苄基鏑六氟 銻酸鹽、3 -苄基苯并噻唑鎗六氟銻酸鹽。 這些市售品例如有 San-AidSI-L85、SI-L110、SI- L145、SI-L150、SI-L160(三新化學工業（股）製造）等 〇 〔D〕成分之使用比例係對於共聚物〔A〕1 0 0重量份 -63- 200903154 時’理想爲使用20重量份以下，更理想爲$重 。使用量超過20重量份時，在塗膜形成步驟中 有析出物析出’影響塗膜形成的情形。 上述〔E〕成分之具有至少1個乙烯性不飽 聚合性化合物’例如有單官能（甲基）丙烯酸酯 (甲基）丙烯酸酯或三官能（甲基）丙烯酸酯。 上述單官能（甲基）丙烯酸酯，例如有2_羥 基）丙烯酸酯、卡必醇（甲基）丙烯酸酯、異冰 基）丙烯酸酯、3 -甲氧基丁基（甲基）丙烯酸酯 基）丙稀酸氧基乙基-2-經丙基苯二甲酸醋等。這 ’例如有 Aronix M-101、M-lll、M-114 (東亞 )製）、KAYARAD TC-1 l〇S、TC-120S (曰本化 製造）、Viscoat 158、2311 (大阪有機化學工業 造）等。 上述一吕能（甲基）丙嫌酸酯例如有：乙二 )丙烯酸酯、1，6 -己二醇二（甲基）丙烯酸酯、 醇二（甲基）丙烯酸酯、聚丙二醇二（甲基）丙 四乙二醇二（甲基）丙烯酸酯、雙苯氧基甲醇芴 酯、雙苯氧基乙醇芴二丙烯酸酯等。這些的市售 • A r ο n i X Μ - 2 1 0、Μ - 2 4 0、Μ - 6 2 0 0 (東亞合成（ )、KAYARAD HDDA、ΗΧ-220、R-604 (日本化 製造）、Viscoat 260、312、335HP (大阪有機化 股）製造）等。 上述二官能以上之（甲基）丙烯酸酯例如有 量份以下 ，有時會 和雙鍵之 、二官能 乙基（甲 片基（甲 、2-(甲 些市售品 合成（股 藥（股） (股）製 醇（甲基 1,9-壬二 烯酸酯、 二丙烯酸 品例如有 股）製造 藥（股） 學工業（ :三羥甲 -64 - 200903154 基丙院二（甲基）丙烯酸酯、季戊四醇三（甲基）丙烯酸 酯、三（（甲基）丙烯醯氧基乙基）磷酸酯、季戊四醇四 (甲基）丙烯酸酯、二季戊四醇五（甲基）丙烯酸酯、二 季戊四醇六（甲基）丙烯酸酯等’其市售品例如有Ar0I1ix M-309、M-400、M-405、M-4 5 0、M-7100、M- 8 0 3 0、M-8060 (東亞合成（股）製）、KAYARAD TMPTA、DPHA 、DPCA-20、DPCA-30、DPCA-60、DPCA-120 (日本化藥 (股）製造）、Viscoat 295、3 00、3 60、GPT、3PA、400 (大阪有機化學工業（股）製造）等。 這些較佳爲使用三官能以上之（甲基）丙烯酸酯，其 中特別理想爲三羥甲基丙烷三（甲基）丙烯酸酯、季戊四 醇四（甲基）丙烯酸酯、二季戊四醇六（甲基）丙烯酸酯 〇 這些之單官能、二官能或三官能以上之（甲基）丙烯 酸酯可單獨使用或組合使用。〔E〕成分之使用比例係對 於共聚物〔A〕1 00重量份時，理想爲使用5 0重量份以下 ’更理想爲3 0重量份以下。 藉由含有此比例之〔E〕成分，可提高由本發明之敏 輻射線性樹脂組成物所製得之層間絕緣膜或微透鏡之耐熱 性及表面硬度等。使用量超過5 0重量份時，在基板上形 成敏輻射線性樹脂組成物之塗膜之步驟中’有時會產生塗 月吴粗縫的情形。 與上述〔F〕成分之共聚物〔A〕不同之其他的環氧樹 脂只要不影響相溶性，則無特別限定。較佳爲雙酚A型環 -65- 200903154 氧樹脂、酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹 脂、環狀脂肪族環氧樹脂、縮水甘油酯型環氧樹脂、縮水 甘油基胺型環氧樹脂、雜環環氧樹脂、甲基丙烯酸縮水甘 油酯之（共）聚合之樹脂等。其中較佳爲雙酚A型環氧樹 脂、甲酚型酚醛清漆環氧樹脂、縮水甘油基酯型環氧樹脂 等。 〔F〕成分之使用比例係對於共聚物〔a〕1 0 0重量份 ，理想爲使用3 0重量份以下。含有此比例之〔F〕成分， 可提高由本發明之敏輻射線性樹脂組成物所製得之保護膜 或絕緣膜之耐熱性及表面硬度等。使用量超過30重量份 時’在基板上形成敏輻射線性樹脂組成物之塗膜時，有時 會產生塗膜之膜厚不均勻的情形。 共聚物〔A〕也稱爲「環氧樹脂」，但是在具有鹼可 溶性方面’與〔F〕成分不同。〔F〕成分爲鹼不溶性。 爲了提高塗佈性，在本發明之敏輻射線性樹脂組成物 中可使用〔G〕界面活性劑。可使用之〔G〕界面活性劑 例如氟系界面活性劑、聚矽氧系界面活性劑及非離子界面 活性劑。 氟系界面活性劑之具體例，例如1 , 1,2,2 -四氟辛基（ m，2,2 -四氟丙基）醚、mi四氟辛基己醚、八甘醇二 (1，1，2,2-四氟丁基）醚、六甘醇二（1，1，2,2,3,3-六<氟戊 基）酸、八丙二醇二（1,1，2,2 -四氟丁基）醚、六丙二醇 —(11,2,2,3,3-六氟戊基）醚、全氟十二烷基磺酸鈉、 1’1’2,2,8,8,9,9，10,10-十氟十二烷、1，1,2,2,3,3-六氟癸烷 -66 - 200903154 等，除此之外有氟烷基苯磺酸鈉；氟烷氧乙醚；氟烷基銨 碘鎗、氟烷基聚氧乙醚、全氟烷基聚氧乙醇；全氟烷基烷 氧醇酸酯；氟系烷酯類等。這些之市售品，例如有：8]^-1 000、BM-1 1 00 ( BM Chemie 公司）製造）、Megafac F142D、F172、F173、F183、F178、F191、F471 (大日本 油墨化學工業（股）製造）、Ful〇radFC-170C、FC-171、 FC-430、FC-431(住友 3M (股）製造）、SurflonS-112 、S-113、 S-131、 S-141、 S-145、 S-382、 SC-101 > SC-102 、SC-103、 SC-104、 SC-105、 SC-106 (旭玻璃（股）製造 )、F-TOP EF301、303、352 (新秋田化成（股）製造） 等。 上述聚矽氧系界面活性劑例如有D C - 3 P A、D C - 7 P A、 FS- 1 2 65 、 S F- 842 8 、 SH11PA 、 SH21PA 、 SH28PA 、 SH29PA、SH30PA、SH-190、SH-193、SZ-6032 (東麗 • Dowcorning · Silicone (股）製造）、tsF-4440、TSF-4300 、 TSF-4445 、 TSF-4446 、 TSF-4460 、 TSF-4452 ( GE 東芝Silicone (股）製造）等之商品名販售者。 上述非離子性系界面活性劑例如可使用聚氧乙烯月桂 醚、聚氧乙烯硬脂醚、聚氧乙烯油醚等之聚氧乙烯烷醚類 ;聚氧乙烯辛基苯醚、聚氧乙烯壬基苯醚等之聚氧乙烯芳 醚類；聚氧乙烯二月桂酯、聚氧乙烯二硬脂酯等之聚氧乙 嫌一院醋類等’（甲基）丙嫌酸系共聚物Polyflow No_57 、95(共榮公司油脂化學工業（股）製造）等。 這些界面活性劑可單獨使用或組合兩種以上使用。 -67- 200903154 這些之〔G〕界面活性劑係對於共聚物〔A〕1 00重量 份時，理想爲使用5重量份以下，更理想爲2重量份以下 。〔G〕界面活性劑之使用量超過5重量份時，在基板上 形成塗膜時，有時容易生成塗膜之膜粗糙的情形。 本發明之敏輻射線性樹脂組成物中，爲了提高與基體 之黏著性，也可使用〔Η〕成份之黏著助劑。此種黏著助 劑可使用官能性矽烷偶合劑，例如具有羧基、甲基丙烯醯 基、異氰酸酯基、環氧基等之反應性取代基之矽烷偶合劑 。具體而言，例如有三甲氧基甲矽烷基苯甲酸、γ-甲基丙 烯氧基丙基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、乙烯 基三甲氧基矽烷、γ-異氰酸酯丙基三乙氧基矽烷、γ-環氧 丙氧基丙基三甲氧基矽烷、β-(3,4-環氧基環己基）乙基 三甲氧基矽烷等。此種〔Η〕成份之黏著助劑係對共聚物 〔A〕1 0 0重量份，理想爲使用2 0重量份以下，更理想爲 1〇重量份以下。黏著助劑之使用量超過20重量份時，有 時在顯影步驟中，容易產生顯影殘留的情形。 敏輻射線性樹脂組成物 本發明之敏輻射線性樹脂組成物係藉由均勻混合上述 共聚物〔A〕、 〔B〕成分及（C)及上述任意添加之其他 成分來製備。通常’本發明之敏輻射線性樹脂組成物係溶 解於適當的溶劑，以溶液狀態來使用。例如以所定比例混 合共聚物〔A〕、〔B〕成分及（C)及任意添加之其他成 分’可製備溶液狀態之敏輻射線性樹脂組成物。 -68- 200903154 製備本發明之敏輻射線性樹脂組成物所用的溶劑係使 用可均勻溶解共聚物〔A〕、 〔B〕成分及（C)及如上述 任意添加之其他成分之各成分，且不與各成分反應者。 m種溶媒例如有與製造上述共聚物〔a〕使用之溶媒 所例示者相同的溶媒。 這種溶媒中’從各成分之溶解性、與各成分之反應性 、塗膜形成之容易度的觀點，可使用例如醇、乙二醇醚、 乙一醇院基醚乙酯、酯及二甘醇。其中特別理想爲苄醇、 2本基乙醇、3 -本基-1_丙醇、乙二醇單丁酸乙酸醋、二甘 醇單乙醚乙酸酯、二甘醇二乙醚、二甘醇乙基甲醚、二甘 醇一甲酸、两二醇單甲醚、丙二醇單甲醚乙酸酯、甲氧基 丙酸甲酯、乙氧基丙酸乙酯。 爲了提高前述溶媒及膜厚之面內均勻性，因此可倂用 问沸點溶媒。可倂用之高沸點溶媒例如有N _甲基甲醯胺 N，N_ 一甲基甲醯胺、N_甲基醯苯胺、&甲基乙醯胺、 N，N-一甲基乙醯胺、N_甲基毗咯烷酮、二甲基亞 ^ ^ 、 ·~^ j- -j 一 、乙醯基丙酮、異佛爾酮、己酸、庚酸、b 酉爭、 1 _~T^ -工顆、乙酸苄酯、苯甲酸乙酯、草酸二乙酯、順 J * 酉奢'—1 —欧〜乙醋、γ-丁內酯、碳酸乙烯酯、碳酸丙烯酯、 本基乙二醇乙醚乙酸酯等。其中較佳者爲Ν_甲基吡咯烷 酮、γ-丁內酯、Ν，Ν-二甲基乙醯胺。 本妒日日5 一 x a之敏輻射線性樹脂組成物之溶媒倂用高沸點溶 某寸问沸點溶媒之使用量係對於全溶媒時，使用5 〇重 量％以下，袖Μ Μ 里肩爲4 0重量％以下，更理想爲3 0重量％以下 -69- 200903154 。高沸點溶媒之使用量超過此使用量時，有時塗膜之膜均 勻性、感度及殘膜率會降低。 本發明之敏輻射線性樹脂組成物以溶液狀態製備時’ 溶液中所佔有之溶媒以外的成分（即共聚物〔A〕、〔 B〕 成分及〔C〕成分及上述任意添加之其他成分之合計量） 之比例可配合使用之目的或所要之膜厚之數値等任意設定 ’通常爲5〜5 0重量％，理想爲丨〇〜4 〇重量％，更理想爲 1 5〜3 5重量％ 〇 上述製備之組成物溶液係使用孔徑0.2 μιη左右之微孔 過濾器等過濾後，可供使用。 層間絕緣膜、微透鏡之形成 其次說明使用本發明之敏輻射線性樹脂組成物，形成 本發明之層間絕緣膜、微透鏡的形成方法。本發明之層間 絕緣膜或微透鏡的形成方法係含有以下順序之下述步驟者 ， (1 )基板上形成本發明之敏輻射線性樹脂組成物之 塗膜的步驟， (2 )將輻射線照射於該塗膜之至少一部份的步驟， (3 )顯影步驟， (4 )加熱步驟。 (1 )基板上形成本發明之敏輻射線性樹脂組成物之塗膜 的步驟 上述（1)之步驟中，在基板表面上塗佈本發明之組 -70 - 200903154 成物溶液，較佳爲藉由預烘烤去除溶劑，形成敏輻射線性 樹脂組成物之塗膜。 可使用之基板的種類，例如有玻璃基板、矽晶圓及在 這些之表面形成各種金屬的基板。 組成物溶液之塗佈方法無特別限定，例如可使用噴塗 法、輥塗法、旋轉塗佈法、狹縫模具式塗佈法（Slit Die C o a t )、棒塗法、噴墨法等各種方法。預烘烤之條件係因 各成分之種類、使用比例而異，但通常爲6 0〜1 1 0。(：、3 0 秒〜1 5分鐘。 所形成之塗膜之膜厚在預烘烤之數値，例如形成層間 絕緣膜時爲3〜6 μιη，形成微透鏡時爲〇. 5〜3 μηι。 (2 )將輻射線照射於該塗膜之至少一部份的步驟 上述（2 )之步驟中’對於形成後之塗膜介由具有所 定圖案之光罩’照射輻射線後，使用顯影液進行顯影處理 去除輻射線之照射部份’形成圖案化。此時所用的輻射線 ，例如有紫外線、遠紫外線、χ射線、荷電粒子線等。 上述紫外線例如有g射線（波長4 3 6 n m )、丨射線（ 波長3 65nm )等。遠紫外線例如有KrF準分子雷射等。χ 射線例如有同步加速器輻射線等。荷電粒子線例如有電子 線等。 其中較理想爲紫外線’特別理想爲含有g射線及/或i 射線之Is射線者。 形成層間絕緣膜時之曝光量較佳爲5〇〜UOOhm2， -71 - 200903154 形成微透鏡時之曝光量較佳爲50〜2,000J/m2。 (3 )顯影步驟 顯影處理所用的顯影液例如可使用氫氧化鈉、氫氧化 鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨、乙胺、正丙胺、二 乙胺、二乙基胺基乙醇、二正丙胺、三乙胺、甲基二乙胺 、二甲基乙醇胺、三乙醇胺、氫氧化四甲銨、氫氧化四乙 銨、吡咯、六氫化吡啶、1 , 8 _二氮雜雙環〔5.4 · 0〕- 7 -十一 烯、1，5 -二氮雜雙環〔4.3 · 〇〕- 5 _壬烷等之鹼（鹼性化合物 )之水溶液。又上述鹼水溶液中添加適量之甲醇、乙醇等 之水溶性有機溶劑或界面活性劑之水溶液，或溶解本發明 之組成物之各種有機溶劑可作爲顯影液使用。顯影方法可 使用攪拌法、浸漬法、搖動浸漬法、噴灑法等之適當方法 。此時之顯影時間係因組成物之組成而異，通常爲3 0〜 1 2 0 秒。 以往之敏輻射線性樹脂組成物，當顯影時間超過最適 當顯影時間20〜25秒時，所形成之圖案會產生剝離，因 此必須嚴密控管顯影時間，但是本發明之敏輻射線性樹脂 組成物’即使超過最適當顯影時間3 0秒以上，也可形成 良好圖案，具有提高良率的優點。 (4 )加熱步驟 如上述實施之（3 )顯影步驟後，對於形成圖案後之 薄膜，理想爲進行例如利用流水清洗之清洗處理，更理想 -72- 200903154 爲全面照射（後曝光）高壓水銀燈等之輻射線 薄膜中殘留之1,2 -萘醌二疊氮化合物進行分解 薄膜利用加熱板、烘箱等加熱裝置對此薄膜實 (後烘烤處理），對該薄膜進行硬化處理。上 驟之曝光量理想爲2,0 0 0〜5，0 0 0 J/m2。此硬化 溫度，例如120〜25 0°C。加熱時間係因加熱機 異，例如在熱板上進行加熱處理時，加熱時間: 鐘，在烘箱進行加熱處理時，加熱時間爲3 0 -此時可使用2次以上之加熱步驟之階段烘烤法; 如此可在基板表面上形成與目的之層間絕 鏡對應之圖案狀薄膜。 上述形成之層間絕緣膜及微透鏡由下述之 爲密著性、耐熱性、耐溶劑性及透明性等優異: 層間絕緣膜 如上述形成之本發明之層間絕緣膜對基板 好，且耐溶劑性及耐熱性優異，具有高穿透率 ，適用於電子零件之層間絕緣膜。 微透鏡 如上述形成之本發明之微透鏡對基板之密 且耐溶劑性及耐熱性優異，具有高透過率及良 狀，適用於固體攝影元件之微透鏡。 本發明之微透鏡的形狀如圖1 ( a )所示， ，對於各該 處理後，此 施加熱處理 述後曝光步 處理之燒結 器之種類而 爵5〜3 0分 -9 0分鐘。 拳。 緣膜或微透 實施例得知 之密著性良 ，低介電率 著性良好， 好之熔融形 爲半凸透鏡 -73 - 200903154 形狀。 本發明之敏輻射線性樹脂組成物係具高輻射線感度， 具有在顯影步驟中即使超過最佳顯影時間，也可形成良好 的圖案形狀之顯影安全係數，且容易形成密著性優異之圖 案狀薄膜。 由上述組成物所形成之本發明之層間絕緣膜時係對基 板之密著性良好，耐溶劑性及耐熱性優異，具有高透過率 ’低介電率者，適用於電子零件之層間絕緣膜。 由上述組成物所形成之本發明之微透鏡係對基板之密著性 良好，耐溶劑性及耐熱性優異，具有高透過率與良好之熔 融形狀者，適用於固體攝影元件之微透鏡。 【實施方式】 〔實施例〕 以下以合成例、實施例更具體說明本發明，本發明不 限於此以下之實施例。 共聚物〔A〕之合成例 合成例1 將2,2’-偶氮雙（2，4-二甲基戊腈）7重量份、二甘醇 乙基甲醚200重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加甲基丙烯酸16重量份、甲基丙烯酸三環〔 5.2.1.02,6〕癸烷-8-基酯16重量份、2-甲基環己基丙烯酸 酯20重量份、甲基丙烯酸縮水甘油酯40重量份、苯乙烯 -74- 200903154 10重量份及α-甲基苯乙烯二聚物3重量份，進行氮取代 後，開始緩慢攪拌。將溶液之溫度上升至7 0 °C，保持此溫 度4小時，得到含共聚物[A-1 ]的聚合物溶液。 聚合物之重量平均分子量爲8,000，分子量分布（重 量平均分子量/數量平均分子量之比）爲2.3。所得之聚合 物溶液的固形份濃度爲34.4重量％。 重量平均分子量及數量平均分子量係使用GPC (凝膠 滲透色層分析法）（東曹（股）製HLC-8020 )所測定的 聚苯乙烯換算平均分子量。 合成例2 將2,2’-偶氮雙（2,4-二甲基戊腈）8重量份及二甘醇 乙基甲醚22〇重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加甲基丙烯酸11重量份、四氫糠基甲基丙烯酸酯 12重量份、甲基丙烯酸縮水甘油酯40重量份、N -環己基 馬來醯亞胺1 5重量份、月桂基甲基丙烯酸酯丨〇重量份、 α-甲基-P-羥基苯乙烯1〇重量份及α-甲基苯乙烯二聚物3 重量份’進行氮取代後，開始緩慢攪拌。將溶液之溫度上 升至7〇°C，保持此溫度5小時，得到含共聚物[Α_2]的聚 合物溶液。 聚合物之重量平均分子量爲8,000，分子量分布（重 量平均分子量/數量平均分子量之比）爲2.3。所得之聚合 物溶液的固形份濃度爲3 1 . 9重量％。 -75- 200903154 合成例3 將2,2，-偶氮雙（2,4-二甲基戊腈）8重量份及二甘醇 乙基甲酸220重量份投入具備冷卻管、擾样之燒瓶中。 接著添加苯乙烯10重量份 '甲基丙烯酸20重量份、甲基 丙烯酸縮水甘油酯40重量份、（3-乙基氧環丁烷-3-基） 甲基丙烯酸酯10重量份及甲基丙烯酸三環〔5.2.1.02’6〕 癸烷-8-基酯20重量份，進行氮取代後，開始緩慢攪拌。 將溶液之溫度上升至7 0 °C，保持此溫度5小時，得到含共 聚物[A-3]的聚合物溶液。 聚合物之重量平均分子量爲7,900，分子量分布（重 量平均分子量/數量平均分子量之比）爲2.4。所得之聚合 物溶液的固形份濃度爲3 1 .6重量％。 合成例4 將2,2’-偶氮雙（2,4-二甲基戊腈）8重量份及二甘醇 乙基甲醚220重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加苯乙烯5重量份、甲基丙烯酸16重量份、甲基 丙烯酸縮水甘油酯4 0重量份及N - ( 4 -羥基苯基）甲基丙 烯醯胺1 0重量份’進行氮取代後，添加丨，3 _ 丁二烯5重 量份’開始緩慢攪拌。將溶液之溫度上升至7 0 〇C ,保持此 溫度5小時，得到含共聚物[a -4 ]的聚合物溶液。 聚合物之重量平均分子量爲7,900，分子量分布（重 量平均分子量/數量平均分子量之比）爲2.4。所得之聚合 物溶液的固形份濃度爲3 1 _ 5重量％。 -76- 200903154 合成例5 將2,2’-偶氮雙（2,4 -二甲基戊腈）7重量份、丙二醇 單甲醚乙酸酯220重量份投入具備冷卻管、攪拌器之燒瓶 中。接著添加甲基丙烯酸22重量份、甲基丙烯酸縮水甘 油酯40重量份、二環戊基甲基丙烯酸酯28重量份' 3_乙 基-3-甲基丙烯醯氧基甲基氧環丁烷1〇重量份、α_甲基苯 乙烯二聚物3重量份’進行氮取代後，開始緩慢攪拌。將 溶液之溫度上升至7 0 Τ： ’保持此溫度4小時，得到含共聚 物[A - 5 ]的聚合物溶液。所得之聚合物溶液的固形份濃度 爲31.8重量％ ’聚合物之重量平均分子量爲〗7,9〇〇，分子 量分布（重量平均分子量/數量平均分子量之比）爲1.8。 合成例6 2,2 -偶氮雙（2,4 - 一甲基戊膳）7重量份、二甘醇 乙基甲醚220重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加苯乙烯5重量份、甲基丙烯酸22重量份、甲基 丙烯酸縮水甘油酯40重量份、3-乙基-3-甲基丙烧醯氧基 甲基氧環丁院5重量份、二環戊基甲基丙稀酸醋28重量 份，進行熟取代後’開始緩慢攪泮。將溶液之溫度上升至 7 0 C ’保此iim度4小時’得到含共聚物[a - 6 ]的聚合物溶 液。所得之聚合物溶液的固形份濃度爲3 1 . 9重量％，聚合 物之重量平均分子量爲20,200，分子量分布（重量平均分 子量/數量平均分子量之比）爲1.9。 -77- 200903154 合成例7 將 2,2，-偶氮雙 7 乙基甲醚200重量份投入具備冷卻管、攪伴器之燒瓶中。 接著添加甲基丙㈣12重量份、31己基馬來醯亞月安12重 量份、α-甲基_p_羥基苯乙烯9重量份、甲基丙烯酸縮水甘 油酯50重量份、3-乙基-3-甲基丙燦酿氧基甲基氧環丁院 1〇重量份、四氫糠基甲基丙烯酸酯7重量(分、心甲基苯乙 烯二聚物3重量份，進行氮取代後’開始緩慢攪拌。將溶 液之溫度上升至7 〇 °C，保持此溫度5小時’得到含共聚物 [A - 7 ]的聚合物溶液。所得之聚合物溶液的固形份濃度爲 32.7重量％，聚合物之重量平均分子量爲21，500 ’分子量 分布（重量平均分子量/數量平均分子量之比）爲2.2° 合成例8 將2，2，-偶氮雙（2，4 -二甲基戊腈）8重量份、二甘醇 乙基甲醚2 20重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加苯乙烯20重量份、甲基丙烯酸30重量份、3 -乙 基-3-甲基丙烯醯氧基甲基氧環丁烷20重量份、甲基丙嫌 酸縮水甘油酯3 0重量份、α-甲基苯乙烯二聚物4.0重量份 ，進行氮取代後，開始緩慢攪拌。將溶液之溫度上升至 70Τ：，保持此溫度5小時，得到含共聚物[Α-8]的聚合物溶 液。所得之聚合物溶液的固形份濃度爲3 1 _ 〇重量’聚合 物之重量平均分子量爲〗9,000’分子量分布（重量平均分 -78- 200903154 子量/數量平均分子量之比）爲1·7。 比較合成例1 將2,2，-偶氮雙（2,4-二甲基戊腈）7重量份、二甘醇 甲基乙醚22 0重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加甲基丙烯酸23重量份、二環戊基甲基丙烯酸醋 4 7重量份、甲基丙烯酸縮水甘油酯2 0重量份、α -甲基苯 乙烯二聚物2.0重量份，進行氮取代後’開始緩慢攪拌。 將溶液之溫度上升至7 0 °C，保持此溫度5小時’得到含共 聚物[A -1 R]的聚合物溶液。所得之聚合物溶液的固形份濃 度爲32.8重量。/。，聚合物之重量平均分子量爲24,000，分 子量分布（重量平均分子量/數量平均分子量之比）爲2.3 比較合成例2 將2，2’-偶氮雙（2，4-二甲基戊腈）7重量份、二甘醇 甲基乙醚220重量份投入具備冷卻管、攪拌器之燒瓶中。 接著添加甲基丙烯酸25重量份、二環戊基甲基丙烯酸酯 35重量份、2-羥乙基甲基丙烯酸酯40重量份、α-甲基苯 乙烯二聚物2.0重量份，進行氮取代後，開始緩慢攪拌。 將溶液之溫度上升至70°C，保持此溫度5小時，得到含共 聚物[A-2R]的聚合物溶液。所得之聚合物溶液的固形份濃 度爲32.8重量％，聚合物之重量平均分子量爲25,000，分 子量分布（重量平均分子量/數量平均分子量之比）爲2.4 -79- 200903154 矽氧烷低聚物〔c〕之合成例 合成例1 將苯基三甲氧基矽烷39.6g、 （3-乙基氧環丁烷-3-基 )丙基三乙氧基矽烷64_0g投入500mL之三口燒瓶中，接 著添加甲基異丁酮1 00g，經溶解所得之混合溶液以磁鐵攪 拌子攪拌’加熱至6 0 °c。以1小時連續添加含有1重量％ 之草酸之8.6 g的離子交換水於上述混合溶液中。以6 0 °C 反應4小時後，所得之反應液冷卻至室溫。其後，將反應 副產物之醇份由反應液中減壓蒸餾除去。此聚合物〔C-1 〕之重量平均分子量爲1，600。 合成例2 將二甲氧基矽烷48.8g、2- (3，4-環氧基環己基）乙基 三甲氧基矽烷49.2g投入500mL之三口燒瓶中，接著添加 丙二醇甲醚乙酸酯1 00g，經溶解所得之混合溶液以磁鐵攪 拌子攪拌，加熱至6 0 °C。以1小時連續添加含有1重量％ 之草酸之8.6g的離子交換水於上述混合溶液中。以60°C 反應4小時後，所得之反應液冷卻至室溫。其後，將反應 副產物之醇份由反應液中減壓蒸餾除去。此聚合物〔C-2 〕之重量平均分子量爲2,000。 合成例3 -80- 200903154 將四甲氧基矽烷30.4g、3 -環氧丙基丙基三甲氧基矽 烷47.2g投入500mL之三口燒瓶中，接著添加丙二醇甲醚 1 〇〇g，經溶解所得之混合溶液以磁鐵攪拌子攪拌’加熱至 6 0T：。以1小時連續添加含有1重量％之草酸之8.6g的離 子交換水於上述混合溶液中。以60 °C反應4小時後’所得 之反應液冷卻至室溫。其後，將反應副產物之醇份由反應 液中減壓蒸餾除去。此聚合物〔C-3〕之重量平均分子量 爲 1,400。 合成例4 將甲基三甲氧基矽烷27.2g、3 -氫硫基三甲氧基砂院 39.2g投入5〇〇mL之三口燒瓶中’接著添加丙一醇甲醚 1 〇〇g，經溶解所得之混合溶液以磁鐵攪拌子擾伴’加熱至 6 0。(：。以1小時連續添加含有1重量％之草酸之8.6 g的離 子交換水於上述混合溶液中。以60 °C反應4小時後’所得 之反應液冷卻至室溫。其後’將反應副產物之醇份由反應 液中減壓蒸餾除去。此聚合物〔c-4〕之重量平均分子量 爲 1，900。 實施例1 〔敏輻射線性樹脂組成物之製備〕 將含有上述合成例1合成之〔A〕成分之聚合物[A-1] 的溶液以相當於共聚物〔A -1〕1 0 0重量份的里（固形份 )與[B]成分之4,4，-[卜（4-(卜[4-羥苯基]_卜甲基乙基） -81 - 200903154 苯基）次乙基]雙酚（ι_〇莫耳）與丨，2_萘醌二疊氮_5_磺酸 氯（2.0莫耳）之縮合物（B-1) 30重量份及聚合物[c_1]3 重量份（固形份）予以混合，溶解於一甘知乙基甲醜’使 固形份濃度成爲30重量％後，以孔徑〇.2μΐΏ之薄膜過據器 過濾，製備敏輻射線性樹脂組成物之溶液（S_ 1 ) ° 實施例2〜16、比較例1 〔敏輻射線性樹脂組成物之製備〕 除了將實施例1中之〔A〕成分及〔B〕成分使用表1 所示之種類、量外，其餘與實施例1相同製備組成物溶液 (S-2)〜（S-16)及（s-1)。 實施例2、6、10、14中，〔B〕成分之記載係表示分 別倂用2種之1,2 -萘醌二疊氮化合物。 實施例1 7 實施例Ϊ中，溶解於二甘醇乙基甲醚/丙二醇單甲醚 乙酸酯=6/4，使固形份濃度成爲2〇重量％及添加（F )外 ’與實施例1相同製備組成物，製備敏輻射線性樹脂組成 物之溶液（S -1 7 )。 表1中，成分之簡稱係表示下述之化合物。 (B-l) : 4,4’-[1- ( 4_ ( 羥苯基]_!-甲基乙基） 苯基）次乙基]雙酚（1.0莫耳）與丨，2_萘醌二疊氮-5_磺酸 氯（2.0吴耳）之縮合物 (B-2) : 4,4’-[1_ ( 4·(卜卜-羥苯基卜卜甲基乙基） -82- 200903154 苯基）次 氯（1.0 ] (B. 1，2 -萘醌 (F : 乙基]雙酚（1 ·〇莫耳）與I，2-萘醌二疊氮-5-磺酸 I耳）之縮合物 3) : 2,3,4,4’ -四羥基二苯甲酮（1.0莫耳）與 二疊氮-5-磺酸酯（2.44莫耳） SH-28PA (東麗 Dowcornig Silicone (股）製） -83- 200903154 其他成分 重量份 1 1 1 1 I I 1 1 1 1 1 i 1 1 1 1 1 L 種類 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 E遯 减1给 祕域] 暮 祕fr 酹ni rA « c成分 重量份 m m m m cn cn m cn m m m m 種類 1—4 ύ C-2 r〇 ΰ 0 ί—Η ΰ C-2 m 1 U C-4 ύ C-2 cn 0 C-4 r-H ό C-2 ro ό 丨——I 1 u 1 B成分 ;重量份 ο 20/10 O m 10/10 1 CN o (N 1 lo/io | (N 10/10 in <N 種類 丨 B-l 1 B-l/B-2 1 B-3 1 1—Η ώ 1 Β-1 1 B-l/B-2 1 B-3 | 1 b-ι 1 1 N ώ B-l/B-2 1 B-3 1 ώ 1 B-l I B-l/B-2 1 B-3 1 B-l 1 b-ι 1 Η m 共聚物A 重量份 ο 〇 o ο ο Ο Ο 100 100 O o 100 〇 O o o 100 100 o r-H o T—^ ο Η 種類 ____ _^__ -A-l 1 Α-1 Γ Α-2 1 Α-2 I 1 A-2 1 1 A-2 ] 1 Α-3Π 1 A-3 1 A-3 1 A-3 I A-4 | ! A-4 1 A-4 1 1 A-4 Π Γ A-l Α-1 組成物種 1_ 1 (S-D 1 (S-2) | 1 (S-3) | 1 (S-4) I 1 (S-5) Ί 1 (S-6) 1 1 (S-7) | 1 (S-8) 1 1 (S-9) | 1 (S-10) 1 | (s-11) | 1 (S-12) 1 1 (S-13) 1 (S-14) I (s-i5) ! 1 (S-16) I | (S-17)n ι 1 實施例1 實施例2 實施例3 實施例4 實施例5 1實施例6 1 實施例7 I實施例8 1 「實施例9 1 實施例l〇 「實施例ii 1 實施例12 |實施例13 1 實施例14 實施例15 實施例16 實施例π 比較例1 -84- 200903154 實施例1 8〜3 4、比較例2 <層間絕緣膜之性能評價> 使用上述製備之敏輻射線性樹脂組成物，如下述評價 層間絕緣膜之各種特性。 〔感度之評價〕 實施例1 8〜3 3、比較例2使用旋轉塗佈機將表2所不 之組成物塗佈於矽基板上後，在加熱板上以9 0。(：進行2分 鐘預烘烤，形成膜厚3 · 0 μηι之塗膜。對於實施例3 4使用 狹縫模具式塗佈機塗佈’以〇. 5 Torr進行真空乾燥後，在 加熱板上以9(TC進行2分鐘預烘烤，形成膜厚3.〇μιη之塗 膜。對於製得之塗膜經由具有所定圖案之圖案光罩以 Canon (股）製PLA_5〇lF曝光機（超高壓水銀燈），改變 曝光時間進行曝光後’以表2之濃度之四甲基氫氧化銨水 溶液，以2 5 °C使用〇 . 4 %之濃度的顯影液時，進行8 0秒鐘 ，使用2 _ 3 8 %之濃度的顯影液時，進行5 0秒之盛液法顯 影。然後使用超純水以流水清洗1分鐘，經乾燥後，在晶 圓上形成圖案。爲了使3.0 Mm之線與空間（1 〇 : 1 )之空 間圖案完全溶解，而測定必要之曝光量。此數値爲感度， 如表2所示。此數値爲1，0 0 〇 J/m2以下時，表示感度良好 〔顯影安全係數之評價〕 實施例1 8〜3 3、比較例2使用旋轉塗佈機將表2所示 -85- 200903154 之組成物塗佈於矽基板上後，在加熱板上以9 0 °C進行2分 鐘預烘烤，形成3 _ Ο μηι之塗膜。對於實施例3 4使用狹縫 模具式塗佈機塗佈，以0.5 Τ 〇 rr進行真空乾燥後，在加熱 板上以90°C進行2分鐘預烘烤，形成膜厚3.0μπι之塗膜。 對於製得之塗膜經由具有3.0 μηι之線與空間（line and space ) ( 10 : 1 )之圖案之光罩，使用 Canon (股）製 PLA-5 01F曝光機（超高壓水銀燈），以相當於上述〔感 度之評價〕所測定之感度値之曝光量進行曝光，在以表2 之濃度之四甲基氫氧化銨水溶液，在2 5 °C下，改變顯影時 間，進行盛液法顯影。然後使用超純水進行1分鐘之流水 清洗，經乾燥後，在晶圚上形成圖案。此時爲了使線寬幅 成爲3 · 0 μιη所需之顯影時間爲最佳顯影時間，如表2所示 。測定由最佳顯影時間再繼續顯影時，3 . 0 μηι之線圖案產 生剝離爲止的時間，顯影安全係數如表2所示。此數値爲 3 0秒以上時，表示顯影安全係數佳。 〔耐溶劑性之評價〕Si(R19)x(OR20)4-x· (12) wherein R1 9 and R2() represent a substituent which does not contain an oxocyclobutyl group, and may be the same or different, each being a hydrogen atom or a monovalent organic group. , X system 〇 ~ 3 integer. The compounds of the above formulae (1 1 ) and (1 2 ) are reactive oxirane oligomers. The reactive alkoxysilane oligomer is introduced into a polyoxane structure in a polyoxyalkylene having an oxycyclobutane ring and a sesquiterpoxysilane structure to reduce the concentration of the oxycyclobutyl group in the polyoxyalkylene. When the molecular weight of the sesquiterpene oxide compound is not lowered, the viscosity is lowered, or the crosslinking shrinkage density is lowered to lower the curing shrinkage ratio, and the cured product is provided with adhesion, chemical resistance, or softened to the cured product. Imported by sex. The reactive alkane oligomer of the present invention preferably has a linear or branched linear polyoxane. Specific examples of the compound (11) having an oxocyclobutyl group, when p = 1, are, for example, (oxycyclobutane-3-yl)methyltrimethoxydecane, (oxycyclobutane-3-yl) Methyltriethoxydecane, (oxycyclobutane-3-yl)methyltri-n-propoxydecane, (oxycyclobutane-3-yl)methyltri-i-propoxydecane, (oxycyclobutane-3-yl)methyltriethoxydecane, (oxycyclobutane-3-yl)methylmethyldimethoxydecane, (oxocyclobutane-3-yl) A Methyldiethoxydecane, (oxycyclobutane-3-yl)methylmethyldi-η-propoxydecane, (oxycyclobutane-3-yl)methylmethyldi-i- Propoxy decane, (oxycyclobutane-3-yl)methylmethyldiethoxydecane, (oxycyclobutane-3-yl)methylethyldimethoxydecane, (oxycyclobutane) Alkyl-3-yl)methylethyldiethoxydecane, (oxycyclobutane-3-yl)methylethyldi-n-propoxydecane, (oxocyclobutane-3-yl) A Ethyl ethyl di-i-propoxy decane, -59- 200903154 (oxycyclobutane-3-yl)methylethyldiethoxy decane, (oxycyclobutane-3-yl)methylbenzene Dimethyl Alkane, (oxycyclobutane-3-yl)methylphenyldiethoxydecane, (oxycyclobutane-3-yl)methylphenyldi-n-propoxydecane, (oxycyclobutane) Alkyl-3-yl)methylphenyldi-i-propoxydecane, (oxycyclobutane-3-yl)methylphenyldiethoxydecane, and the like. When p = 2, for example, there are bis(oxycyclobutane-3-yl)methyldimethoxydecane, bis(oxycyclobutane-3-yl)methyldiethoxydecane, and di(oxycyclobutane). Alkyl-3-yl)methyldi-η-propoxydecane, bis(oxocyclobutane-3-yl)methyldi-i-propoxydecane, bis(oxocyclobutane-3-yl) Methyldiethoxydecane, bis(oxocyclobutane-3-yl)methylmethylmethoxydecane, bis(oxocyclobutane-3-yl)methylmethylethoxy decane, two (oxycyclobutane-3-yl)methylmethyl-η-propoxydecane, bis(oxocyclobutane-3-yl)methylmethyl-i-propoxydecane, bis(oxocyclobutane) Alkyl-3-yl)methylmethylacetoxydecane, bis(oxocyclobutane-3-yl)methylethylmethoxydecane, bis(oxocyclobutane-3-yl)methylidene Ethoxy decane, bis(oxycyclobutane-3-yl)methylethyl-η-propoxy decane, bis(oxocyclobutan-3-yl)methylethyl-i-propoxy Decane, bis(oxocyclobutane-3-yl)methylethylethoxydecane, bis(oxocyclobutane-3-yl)methylphenylmethoxydecane, bis(oxocyclobutane- 3-based methylbenzene Ethoxy decane, bis(oxocyclobutan-3-yl)methylbenzyl-η-propoxylate, I(Oxycyclobutan-3-yl)methylphenyl-i-propoxy Decane, bis(oxocyclobutane-3-yl)methylphenylethoxydecane, and the like. When p = 3, for example, there are tris(oxycyclobutane-3-yl)methylmethoxydecane, tris(oxycyclobutane-3-yl)methylethoxydecane, and tris(oxocyclobutane-). 60- 200903154 3-yl)methyl-η-propoxydecane, tris(oxycyclobutane-3-yl)methyl-i-propoxydecane, tris(oxocyclobutane-3-yl)methyl Ethyl ethoxy decane and the like. Specific examples of the compound (12) having an oxocyclobutyl group include tetramethoxynonane, tetraethoxydecane, methyltrimethoxydecane, methyltriethoxydecane, and methyltripropoxy group. Decane, methyl triisopropoxy decane, ethyl trimethoxy decane, ethyl triethoxy decane, propyl triethoxy decane, butyl trimethoxy decane, cycloethyl trimethoxy decane, three Ethoxy decane, phenyl trimethoxy decane, phenyl triethoxy decane, dimethyl diethoxy decane, dimethyl diethoxy decane, diethyl dimethoxy decane, diethyl Diethoxydecane, diphenyldimethoxydecane, diphenyldiethoxydecane, methylphenyldimethoxydecane, methylphenyldiethoxydecane, trimethylstanol, Triethyl stanol, tripropyl stanol, tributyl stanol, triphenyl stanol, trimethyl methoxy decane, trimethyl ethoxy decane, triethyl methoxy decane, triethyl Ethoxy decane, tripropyl methoxy decane, tripropyl ethoxy decane, trimethyl methacrylate, trimethyl Alkyl benzoate, triethylmethyl decyl acetate, triethyl decyl benzoate, benzyl dimethyl methoxy decane, benzyl dimethyl ethoxy decane, diphenyl Oxymethyl decane, diphenyl ethoxymethyl decane, ethionyl triphenyl decane, ethoxy triphenyl decane, hexamethyldioxane, hexaethyl dimethyl dioxane Hexapropyldioxane, 1,3-dibutyl-1,1,3,3-tetramethyldioxane, 1,3-diphenyl-1,1,3,3-tetra Methyl dioxane, 1,3 - dimethyl-1,1,3,3-tetraphenyldioxane, etc. -61 - 200903154 Other components The sensitive radiation linear resin composition of the present invention contains the above copolymerization The components [A], [B], and [C] are essential components, but may contain [D] a thermosensitive acid generating compound, [E] a polymerizable compound having at least one ethylenically unsaturated double bond, and [F, if necessary. Other epoxy resin, [G] surfactant, or [H] adhesion aid different from copolymer [A]. The above [D] thermosensitive acid generating compound can be used for improving heat resistance or hardness. Specifically, for example, an onium salt, a benzothiazole key salt, an ammonium salt, a money salt or the like. Specific examples of the above phosphonium salt include an alkyl phosphonium salt, a benzyl phosphonium salt, a dibenzyl phosphonium salt, a substituted benzyl phosphonium salt and the like. Specific examples of these are alkyl sulfonium salts such as 4-ethenyl phenyl dimethyl hexafluoroantimonate, 4-ethyl hydroxy phenyl dimethyl hexafluoro arsenate, dimethyl-4. -(Benzyloxycarbonyloxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzylideneoxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzamide) Oxy)phenyl hexafluoroarsenate, dimethyl-3-chloro-4-ethenyloxyphenylphosphonium hexafluoroantimonate, etc.; benzyl sulfonium salt, for example, benzyl-4-hydroxyphenyl Methyl hydrazine hexafluoroantimonate, benzyl-4-hydroxyphenylmethyl sulfonium hexafluorophosphate, 4-acetoxyphenylbenzylmethyl hexafluoroantimonate, benzyl-4-methyl Oxyphenylmethyl hydrazine hexafluoroantimonate, benzyl-2-methyl-4-hydroxyphenylmethyl hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethyl hydrazine Hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphate, etc.; dibenzyl phosphonium salt such as dibenzyl-4-hydroxyphenylphosphonium hexafluoroantimonate, Dibenzyl-62- 200903154 -4-hydroxyphenyl sulfonium hexafluorophosphate, 4-ethoxy phenyl phenyl dibenzyl hexafluoroantimonate, dibenzyl-4-methoxyphenyl fluorene Fluoride, dibenzyl- 3-Chloro-4-hydroxyphenylphosphonium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-tert-butylphenylphosphonium hexafluoroantimonate, benzyl-4-methyl Oxybenzyl-4-hydroxyphenylphosphonium hexafluorophosphate; etc.; substituted benzyl sulfonium salt such as p-chlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, p-nitrobenzyl-4- Hydroxyphenylmethyl hydrazine hexafluoroantimonate, p-chlorobenzyl-4-hydroxyphenylmethyl sulfonium hexafluorophosphate, p-nitrobenzyl-3 -methyl-4 hydroxyphenylmethyl fluorene Fluoride, 3,5-dichlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, o-chlorobenzyl-3-chloro-4-hydroxyphenylmethylphosphonium hexafluoroantimonate Salt and so on. Specific examples of the above benzothiazolium salt are 3-benzylbenzothiazolium hexafluoroantimonate, 3-benzylbenzothiazolium hexafluorophosphate, 3-benzylbenzothiazole gun tetrafluoroborate, 3-(p-methoxybenzyl)benzothiazole hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazole gun hexafluoroantimonate, 3-benzyl-5-chloro A benzyl benzothiazole gun such as benzothiazole hexafluoroantimonate. Among these, it is preferred to use a sulfonium salt and a benzothiazole gun, particularly 4-ethyloxyphenyl dimethyl sulfonium hexafluoroarsenate, benzyl-4-hydroxyphenylmethyl hexafluoroantimonic acid. Salt, 4-acetoxyphenylbenzylmethylphosphonium hexafluoroantimonate, dibenzyl-4-hydroxyphenylphosphonium hexafluoroantimonate, 4-ethyloxyphenylbenzylphosphonium hexafluorophosphate Citrate, 3-benzylbenzothiazole gun hexafluoroantimonate. These commercially available products are, for example, San-AidSI-L85, SI-L110, SI-L145, SI-L150, SI-L160 (manufactured by Sanshin Chemical Industry Co., Ltd.), etc. [A] 100 parts by weight - 63 - 200903154 'The ideal is 20 parts by weight or less, more preferably $ weight. When the amount is more than 20 parts by weight, precipitation of precipitates in the coating film forming step may affect the formation of the coating film. The above component (E) has at least one ethylenically unsaturated polymerizable compound, for example, a monofunctional (meth) acrylate (meth) acrylate or a trifunctional (meth) acrylate. The above monofunctional (meth) acrylates are, for example, 2-hydroxy) acrylate, carbitol (meth) acrylate, iso- ice acrylate, 3-methoxybutyl (meth) acrylate Acetoxyethyl-2-propyl phthalate vinegar and the like. This is, for example, Aronix M-101, M-lll, M-114 (East Asia), KAYARAD TC-1 l〇S, TC-120S (Made in Sakamoto), Viscoat 158, 2311 (Osaka Organic Chemical Industry) )Wait. The above-mentioned Luneng (methyl) propionic acid esters are, for example, ethylenediacrylate, 1,6-hexanediol di(meth)acrylate, alcohol di(meth)acrylate, polypropylene glycol di(a) Base) propylene tetraethylene glycol di(meth)acrylate, bisphenoxymethyl decyl methacrylate, bisphenoxyethanol hydrazine diacrylate, and the like. These are commercially available • A r ο ni X Μ - 2 1 0, Μ - 2 4 0, Μ - 6 2 0 0 (East Asia Synthetic ( ), KAYARAD HDDA, ΗΧ-220, R-604 (made in Nippon Kasei), Viscoat 260, 312, 335HP (Osaka Organic Chemicals) manufacturing). The above-mentioned difunctional or higher (meth) acrylate may be, for example, in parts or less, and may be combined with a double bond, a difunctional ethyl group (A, 2-, and a (commercially synthesized product). ) (stock) alcohol (methyl 1,9-decadienoate, diacrylic acid such as shares) manufacturing medicine (stock) industry (: trishydroxy-64 - 200903154 Acrylate, pentaerythritol tri(meth)acrylate, tris((meth)propenyloxyethyl)phosphate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol (Meth) acrylates and the like are commercially available, for example, Ar0I1ix M-309, M-400, M-405, M-4 50, M-7100, M-8 0 0 0, M-8060 (East Asian synthesis) (share) system), KAYARAD TMPTA, DPHA, DPCA-20, DPCA-30, DPCA-60, DPCA-120 (manufactured by Nippon Kayaku Co., Ltd.), Viscoat 295, 3 00, 3 60, GPT, 3PA, 400 (Manufactured by Osaka Organic Chemical Industry Co., Ltd.), etc. These are preferably trifunctional or higher (meth) acrylates, and particularly preferably three Monofunctional, difunctional or trifunctional or higher (meth) acrylates such as methylolpropane tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate oxime When the component (E) is used in an amount of 100 parts by weight based on the copolymer [A], it is preferably used in an amount of 50 parts by weight or less, more preferably 30 parts by weight or less. The component (E) can improve the heat resistance and surface hardness of the interlayer insulating film or the microlens obtained from the linear radiation resin composition of the present invention. When the amount exceeds 50 parts by weight, the linearity of the radiation is formed on the substrate. In the step of coating the film of the resin composition, the case may be caused by the thick seam of the coating. The other epoxy resin different from the copolymer [A] of the above [F] component is not particularly affected as long as it does not affect the compatibility. Preferred. Bisphenol A type ring-65- 200903154 Oxygen resin, phenol novolak type epoxy resin, cresol novolac type epoxy resin, cyclic aliphatic epoxy resin, glycidyl ester epoxy Resin, glycidylamine type epoxy resin, heterocyclic epoxy resin, (co)polymerized resin of glycidyl methacrylate, etc. Among them, bisphenol A type epoxy resin and cresol type novolac ring are preferable. Oxygen resin, glycidyl ester type epoxy resin, etc. The use ratio of the component [F] is preferably 10 parts by weight or less based on 100 parts by weight of the copolymer [a]. The heat resistance, surface hardness and the like of the protective film or the insulating film obtained from the sensitive radiation linear resin composition of the present invention can be improved. When the amount of use exceeds 30 parts by weight, when a coating film of a radiation sensitive linear resin composition is formed on a substrate, the film thickness of the coating film may be uneven. The copolymer [A] is also referred to as "epoxy resin", but differs from the component [F] in terms of alkali solubility. The component [F] is alkali-insoluble. In order to improve coatability, a [G] surfactant may be used in the sensitive radiation linear resin composition of the present invention. The [G] surfactant which can be used is, for example, a fluorine-based surfactant, a polysiloxane surfactant, and a nonionic surfactant. Specific examples of the fluorine-based surfactant include, for example, 1,1,2,2-tetrafluorooctyl (m, 2,2-tetrafluoropropyl) ether, mi tetrafluorooctyl hexyl ether, and octaethylene glycol (1) 1,2,2-tetrafluorobutyl)ether, hexaethylene glycol II (1,1,2,2,3,3-hexa <Fluoropentyl)acid, octapropylene glycol bis(1,1,2,2-tetrafluorobutyl)ether, hexapropylene glycol-(11,2,2,3,3-hexafluoropentyl)ether, perfluoro Sodium dodecyl sulfate, 1'1'2,2,8,8,9,9,10,10-decafluorododecane, 1,1,2,2,3,3-hexafluorodecane -66 - 200903154, etc., in addition to sodium fluoroalkylbenzene sulfonate; fluoroalkoxyethyl ether; fluoroalkyl ammonium iodine gun, fluoroalkyl polyoxyether, perfluoroalkyl polyoxyethylene; perfluoroalkyl Alkoxyalkanoates; fluoroalkanes and the like. Commercial products of these are, for example, 8]^-1 000, BM-1 1 00 (manufactured by BM Chemie), Megafac F142D, F172, F173, F183, F178, F191, F471 (Daily Ink Chemical Industry ( () manufacturing), Ful〇radFC-170C, FC-171, FC-430, FC-431 (manufactured by Sumitomo 3M (share)), Surflon S-112, S-113, S-131, S-141, S-145 , S-382, SC-101 > SC-102, SC-103, SC-104, SC-105, SC-106 (made by Asahi Glass Co., Ltd.), F-TOP EF301, 303, 352 (New Akita Chemicals) (share) manufacturing) and so on. The polyoxo-based surfactants are, for example, DC-3PA, DC-7PA, FS-1 2 65, S F- 842 8 , SH11PA, SH21PA, SH28PA, SH29PA, SH30PA, SH-190, SH-193, SZ-6032 (made by Toray Dowcorning · Silicone Co., Ltd.), tsF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4452 (Manufactured by GE Toshiba Silicone Co., Ltd.) Trade name seller. As the nonionic surfactant, for example, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene octylphenyl ether and polyoxyethylene oxime can be used. Polyoxyethylene aryl ethers such as phenylene ether; polyoxyethylene dilauryl ester, polyoxyethylene distearyl ester, etc., polyoxyethylene, glycerin, etc. '(Methyl) propylene sulphuric acid copolymer Polyflow No_57 95 (manufactured by the company's oleochemical industry). These surfactants may be used singly or in combination of two or more. -67- 200903154 When the [G] surfactant is 100 parts by weight of the copolymer [A], it is preferably used in an amount of 5 parts by weight or less, more preferably 2 parts by weight or less. When the amount of the surfactant used is more than 5 parts by weight, when the coating film is formed on the substrate, the film of the coating film may be easily formed. In the sensitive radiation linear resin composition of the present invention, in order to improve the adhesion to the substrate, an adhesive agent of a [Η] component can also be used. As such an adhesion promoter, a functional decane coupling agent such as a decane coupling agent having a reactive substituent such as a carboxyl group, a methacryl fluorenyl group, an isocyanate group or an epoxy group can be used. Specific examples include, for example, trimethoxymethyl decyl benzoic acid, γ-methyl propyloxy propyl trimethoxy decane, vinyl triethoxy decane, vinyl trimethoxy decane, and γ-isocyanate propyl. Triethoxy decane, γ-glycidoxypropyltrimethoxydecane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like. The adhesive agent of such a [Η] component is preferably used in an amount of 20 parts by weight or less, more preferably 1 part by weight or less, based on 100 parts by weight of the copolymer [A]. When the amount of the adhesion aid used exceeds 20 parts by weight, sometimes development residue may easily occur in the development step. Sensitive Radiation Linear Resin Composition The sensitive radiation linear resin composition of the present invention is prepared by uniformly mixing the above copolymer [A], [B] component, and (C), and any other components added as described above. Generally, the sensitive radiation linear resin composition of the present invention is dissolved in a suitable solvent and used in a solution state. For example, a sensitive radiation linear resin composition in a solution state can be prepared by mixing the copolymers [A], [B] and (C) and any other components added in a predetermined ratio. -68- 200903154 The solvent used for preparing the radiation sensitive linear resin composition of the present invention is a component which can uniformly dissolve the copolymers [A], [B] and (C) and other components added as described above, and does not Reacts with each component. The m kinds of solvents are, for example, the same solvents as those exemplified for the production of the solvent used in the above copolymer [a]. In such a solvent, for example, from the viewpoints of the solubility of each component, the reactivity with each component, and the ease of formation of a coating film, for example, an alcohol, a glycol ether, a vinyl ether ethyl ether, an ester, and a digan can be used. alcohol. Particularly preferred among them are benzyl alcohol, 2 benzyl alcohol, 3-propenyl-1-propanol, ethylene glycol monobutyrate acetate, diethylene glycol monoethyl ether acetate, diethylene glycol diethyl ether, diethylene glycol Methyl ether, diethylene glycol monocarboxylic acid, diglycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl methoxypropionate, ethyl ethoxy propionate. In order to improve the in-plane uniformity of the solvent and the film thickness, the boiling point solvent can be used. High-boiling solvents which can be used are, for example, N-methylformamide N,N-methylformamide, N-methylanilide, &methylacetamide, N,N-monomethylammonium Amine, N_methylpyrrolidone, dimethyl y ^ ^, ·~^ j- -j I, acetonitrile, isophorone, caproic acid, heptanoic acid, b 酉, 1 _~ T^ - granules, benzyl acetate, ethyl benzoate, diethyl oxalate, cis J * 酉 ' '-1 - ou- vinegar, γ-butyrolactone, ethylene carbonate, propylene carbonate, base Ethylene glycol ether acetate and the like. Preferred among them are Ν-methylpyrrolidone, γ-butyrolactone, hydrazine, hydrazine-dimethylacetamide.妒 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 辐射 辐射 辐射 辐射 辐射 辐射 辐射 辐射 辐射 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 The weight% or less is more preferably 30% by weight or less -69-200903154. When the amount of the high-boiling solvent used exceeds the amount used, the film uniformity, sensitivity, and residual film ratio of the coating film may be lowered. When the sensitive radiation linear resin composition of the present invention is prepared in a solution state, the components other than the solvent (ie, the copolymer [A], the [B] component, and the [C] component, and the other components added arbitrarily added in the solution) The ratio of the amount can be arbitrarily set in accordance with the purpose of use or the desired number of film thicknesses, etc. 'usually 5 to 50% by weight, preferably 丨〇 4 to 4% by weight, more preferably 1 5 to 3 5 % by weight. The composition solution prepared above is filtered by using a micropore filter having a pore diameter of about 0.2 μm or the like, and is used. Formation of Interlayer Insulating Film and Microlens Next, a method of forming the interlayer insulating film and the microlens of the present invention by using the sensitive radiation linear resin composition of the present invention will be described. The method for forming an interlayer insulating film or a microlens of the present invention comprises the following steps of the following steps: (1) a step of forming a coating film of the sensitive radiation linear resin composition of the present invention on the substrate, and (2) irradiating the radiation. a step of at least a portion of the coating film, (3) a developing step, and (4) a heating step. (1) a step of forming a coating film of the radiation sensitive linear resin composition of the present invention on the substrate. In the step (1) above, a solution of the group -70 - 200903154 of the present invention is applied onto the surface of the substrate, preferably by borrowing The solvent is removed by prebaking to form a coating film of the radiation sensitive linear resin composition. The types of substrates that can be used include, for example, a glass substrate, a germanium wafer, and a substrate on which various metals are formed. The coating method of the composition solution is not particularly limited, and various methods such as a spray coating method, a roll coating method, a spin coating method, a slit die coating method (Slit Die Coat), a bar coating method, and an inkjet method can be used. . The prebaking conditions vary depending on the type of each component and the ratio of use, but are usually from 60 to 1 1 0. (:, 30 seconds to 1 5 minutes. The film thickness of the formed coating film is in the number of prebaking, for example, 3 to 6 μm when the interlayer insulating film is formed, and 〇 when forming the microlens. 5~3 μηι (2) a step of irradiating the radiation to at least a portion of the coating film, in the step (2) above, using the developer after irradiating the radiation to the formed coating film through a mask having a predetermined pattern The developing portion is used to remove the irradiated portion of the radiation to form a pattern. The radiation used at this time is, for example, ultraviolet rays, far ultraviolet rays, xenon rays, charged particle rays, etc. The above ultraviolet rays are, for example, g rays (wavelength 4 3 6 nm). X-rays (wavelength 3 65 nm), etc. The far-ultraviolet rays are, for example, KrF excimer lasers, etc. X-rays include, for example, synchrotron radiation, etc. Charged particle lines include, for example, electron beams, etc. Among them, ultraviolet rays are particularly desirable as containing The amount of exposure of the g-ray and/or the i-ray is preferably 5 〇 to UOOhm 2 when forming the interlayer insulating film, and the exposure amount when forming the microlens is preferably 50 to 2,000 J/m 2 . 3) Development step development The developer to be used may, for example, be sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, diethylaminoethanol, di-n-propylamine, Triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, hexahydropyridine, 1,8-diazabicyclo[5.4 · 0]- An aqueous solution of a base (basic compound) such as 7-undecene, 1,5-diazabicyclo[4.3.sodium]-5-decane, etc., and an appropriate amount of water soluble in methanol, ethanol, etc. An aqueous solution of an organic solvent or a surfactant, or various organic solvents which dissolve the composition of the present invention can be used as a developing solution. The developing method can be carried out by a suitable method such as a stirring method, a dipping method, a shaking dipping method, a spraying method, or the like. The development time varies depending on the composition of the composition, and is usually from 30 to 120 seconds. In the past, the radiation-sensitive linear resin composition produced a pattern when the development time exceeded the most appropriate development time by 20 to 25 seconds. Stripped, so it must be tightly controlled Development time, but the sensitive radiation linear resin composition of the present invention can form a good pattern even if it exceeds the most suitable development time for more than 30 seconds, and has the advantage of improving the yield. (4) The heating step is as described above (3) After the development step, it is preferable to carry out a cleaning treatment using, for example, a running water cleaning for the film after the pattern formation, and it is more preferable that -72-200903154 is a 1,2 -naphthalene remaining in the radiation film of a high-pressure mercury lamp such as a full-emission (post-exposure) high-pressure mercury lamp. The ruthenium diazide compound is subjected to decomposition of the film by a heating means such as a hot plate or an oven (post-baking treatment), and the film is subjected to a hardening treatment. The exposure amount of the above step is ideally 2,0 0 0~5, 0 0 0 J/m2. This hardening temperature is, for example, 120 to 25 °C. The heating time is different depending on the heating machine, for example, when heat treatment is performed on a hot plate, the heating time is: clock, when the oven is heated, the heating time is 30 - at this time, the heating step of the heating step of 2 or more times can be used. In this way, a patterned film corresponding to the target interlayer mirror can be formed on the surface of the substrate. The interlayer insulating film and the microlens formed as described above are excellent in adhesion, heat resistance, solvent resistance, transparency, and the like as follows: Interlayer insulating film The interlayer insulating film of the present invention formed as described above is good for the substrate and resistant to solvents Excellent in properties and heat resistance, high penetration rate, suitable for interlayer insulation film of electronic parts. Microlens The microlens of the present invention formed as described above is excellent in solvent resistance and heat resistance to a substrate, has high transmittance and good shape, and is suitable for use in a microlens of a solid-state imaging device. The shape of the microlens of the present invention is as shown in Fig. 1 (a), and for each of the treatments, the type of the sintering device which is subjected to the heat treatment and the exposure step treatment is applied for 5 to 30 minutes to 9.0 minutes. fist. The film or micro-transparent embodiment has good adhesion and low dielectric constant, and the shape of the melt is a semi-convex lens -73 - 200903154. The sensitive radiation linear resin composition of the present invention has a high radiation sensitivity, and has a development safety factor that can form a good pattern shape even if the optimum development time is exceeded in the development step, and is easy to form a pattern having excellent adhesion. film. The interlayer insulating film of the present invention formed of the above composition is excellent in adhesion to a substrate, is excellent in solvent resistance and heat resistance, and has a high transmittance 'low dielectric constant, and is suitable for an interlayer insulating film of an electronic component. . The microlens of the present invention which is formed of the above-mentioned composition is excellent in adhesion to a substrate, is excellent in solvent resistance and heat resistance, and has a high transmittance and a good melt shape, and is suitable for a microlens of a solid-state imaging element. [Embodiment] [Examples] Hereinafter, the present invention will be specifically described by way of Synthesis Examples and Examples, but the present invention is not limited to the following examples. Synthetic Example of Copolymer [A] Synthesis Example 1 7 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts by weight of diethylene glycol ethyl methyl ether were placed in a cooling tube. In the flask of the stirrer. Next, 16 parts by weight of methacrylic acid, 16 parts by weight of tricyclo [5.2.1.02,6]nonane-8-yl methacrylate, 20 parts by weight of 2-methylcyclohexyl acrylate, and glycidyl methacrylate were added. 40 parts by weight, 10 parts by weight of styrene-74-200903154 and 3 parts by weight of α-methylstyrene dimer were slowly stirred after nitrogen substitution. The temperature of the solution was raised to 70 ° C, and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A-1 ]. The weight average molecular weight of the polymer was 8,000, and the molecular weight distribution (ratio of weight average molecular weight / number average molecular weight) was 2.3. The solid content concentration of the obtained polymer solution was 34.4% by weight. The weight average molecular weight and the number average molecular weight are polystyrene-converted average molecular weights measured by GPC (gel permeation chromatography) (HLC-8020, manufactured by Tosoh Corporation). Synthesis Example 2 8 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 22 parts by weight of diethylene glycol ethyl methyl ether were placed in a flask equipped with a cooling tube and a stirrer. Next, 11 parts by weight of methacrylic acid, 12 parts by weight of tetrahydrofurfuryl methacrylate, 40 parts by weight of glycidyl methacrylate, 15 parts by weight of N-cyclohexylmaleimide, and lauryl methacrylic acid were added. The ester oxime part by weight, the α-methyl-P-hydroxystyrene 1 part by weight, and the α-methyl styrene dimer 3 parts by weight' were subjected to nitrogen substitution, and then the stirring was started slowly. The temperature of the solution was raised to 7 ° C, and this temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [Α_2]. The weight average molecular weight of the polymer was 8,000, and the molecular weight distribution (ratio of weight average molecular weight / number average molecular weight) was 2.3. The solid solution concentration of the obtained polymer solution was 31.9% by weight. -75- 200903154 Synthesis Example 3 8 parts by weight of 2,2,-azobis(2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol ethyl formate were placed in a flask equipped with a cooling tube and a sample . Next, 10 parts by weight of styrene, 20 parts by weight of methacrylic acid, 40 parts by weight of glycidyl methacrylate, 10 parts by weight of (3-ethyloxycyclobutane-3-yl)methacrylate, and methacrylic acid were added. 20 parts by weight of tricyclo [5.2.1.02'6] decane-8-yl ester was slowly stirred after nitrogen substitution. The temperature of the solution was raised to 70 ° C, and this temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [A-3]. The weight average molecular weight of the polymer was 7,900, and the molecular weight distribution (ratio of weight average molecular weight / number average molecular weight) was 2.4. The solid solution concentration of the obtained polymer solution was 31.6% by weight. Synthesis Example 4 8 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol ethyl methyl ether were placed in a flask equipped with a cooling tube and a stirrer. Next, after adding 5 parts by weight of styrene, 16 parts by weight of methacrylic acid, 40 parts by weight of glycidyl methacrylate, and 10 parts by weight of N-(4-hydroxyphenyl)methacrylamide, nitrogen substitution was carried out. Add hydrazine, 3 _ butadiene 5 parts by weight 'start stirring slowly. The temperature of the solution was raised to 70 ° C and maintained at this temperature for 5 hours to obtain a polymer solution containing the copolymer [a -4 ]. The weight average molecular weight of the polymer was 7,900, and the molecular weight distribution (ratio of weight average molecular weight / number average molecular weight) was 2.4. The solid solution concentration of the obtained polymer solution was 3 1 - 5 wt%. -76- 200903154 Synthesis Example 5 7 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 220 parts by weight of propylene glycol monomethyl ether acetate were placed in a flask equipped with a cooling tube and a stirrer. in. Next, 22 parts by weight of methacrylic acid, 40 parts by weight of glycidyl methacrylate, and 28 parts by weight of dicyclopentyl methacrylate were added as '3-ethyl-3-methylpropenyloxymethyloxycyclobutane. One part by weight and 3 parts by weight of the α-methylstyrene dimer were slowly stirred after nitrogen substitution. The temperature of the solution was raised to 70 Torr: 'This temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A - 5 ]. The obtained polymer solution had a solid content concentration of 31.8% by weight. The weight average molecular weight of the polymer was 7,9 Å, and the molecular weight distribution (ratio of weight average molecular weight / number average molecular weight) was 1.8. Synthesis Example 6 7 parts by weight of 2,2-azobis(2,4-methylammonium) and 220 parts by weight of diethylene glycol ethyl methyl ether were placed in a flask equipped with a cooling tube and a stirrer. Next, 5 parts by weight of styrene, 22 parts by weight of methacrylic acid, 40 parts by weight of glycidyl methacrylate, and 5 parts by weight of 3-ethyl-3-methylpropenyloxymethyloxetane, and two 28 parts by weight of cyclopentylmethyl acrylate vinegar, after the ripening, began to slowly stir. The temperature of the solution was raised to 70 ° C to maintain the iim degree for 4 hours to obtain a polymer solution containing the copolymer [a - 6 ]. The obtained polymer solution had a solid concentration of 31.9% by weight, a weight average molecular weight of the polymer of 20,200, and a molecular weight distribution (weight average molecular weight / number average molecular weight ratio) of 1.9. -77-200903154 Synthesis Example 7 200 parts by weight of 2,2,-azobis 7-ethyl methyl ether was placed in a flask equipped with a cooling tube and a stirrer. Next, 12 parts by weight of methyl propyl (tetra), 12 parts by weight of 31 hexylmalylene, 9 parts by weight of α-methyl_p-hydroxystyrene, 50 parts by weight of glycidyl methacrylate, and 3-ethyl- were added. 1 part by weight of 3-methylpropenyloxymethyloxetane, 7 parts by weight of tetrahydrofurfuryl methacrylate (min, 3 parts by weight of cardiomethylstyrene dimer, after nitrogen substitution) Slow stirring was started. The temperature of the solution was raised to 7 〇 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [A - 7 ]. The obtained polymer solution had a solid concentration of 32.7 % by weight, polymerization. The weight average molecular weight of the material was 21,500 'Molecular weight distribution (weight average molecular weight / number average molecular weight ratio) was 2.2 ° Synthesis Example 8 2,2,-azobis(2,4-dimethylvaleronitrile) 8 20 parts by weight of diethylene glycol ethyl methyl ether (2 parts by weight) was placed in a flask equipped with a cooling tube and a stirrer. Next, 20 parts by weight of styrene, 30 parts by weight of methacrylic acid, and 3-ethyl-3-methylpropene were added. 20 parts by weight of methoxyoxymethylcyclobutane, 30 parts by weight of methacrylic acid glycidyl ester, α-A 4.0 parts by weight of the styrene dimer, after nitrogen substitution, slow stirring was started. The temperature of the solution was raised to 70 Torr: and the temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [Α-8]. The solid concentration of the polymer solution is 3 1 _ 〇 weight 'the weight average molecular weight of the polymer is 〗 9,000' molecular weight distribution (weight ratio -78-200903154 sub-quantity / number average molecular weight ratio) is 1.7. Example 1 7 parts by weight of 2,2,-azobis(2,4-dimethylvaleronitrile) and 22 parts by weight of diethylene glycol methyl ether were placed in a flask equipped with a cooling tube and a stirrer. 23 parts by weight of acrylic acid, 47 parts by weight of dicyclopentyl methacrylate, 20 parts by weight of glycidyl methacrylate, and 2.0 parts by weight of α-methylstyrene dimer, after starting nitrogen substitution, 'start slow The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [A -1 R]. The obtained polymer solution had a solid concentration of 32.8 wt. The weight average molecular weight of the polymer is 24,000. The amount distribution (weight average molecular weight / number average molecular weight ratio) was 2.3. Comparative Synthesis Example 2 2,2'-azobis(2,4-dimethylvaleronitrile) 7 parts by weight, diethylene glycol methyl ether 220 The weight portion was placed in a flask equipped with a cooling tube and a stirrer. Then, 25 parts by weight of methacrylic acid, 35 parts by weight of dicyclopentyl methacrylate, 40 parts by weight of 2-hydroxyethyl methacrylate, and α-A were added. 2.0 parts by weight of the styrene dimer was slowly stirred after nitrogen substitution. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer [A-2R]. The solid solution concentration of the obtained polymer solution was 32.8% by weight, the weight average molecular weight of the polymer was 25,000, and the molecular weight distribution (weight average molecular weight / number average molecular weight ratio) was 2.4 - 79 - 200903154 oxirane oligomer [c Synthesis Example Synthesis Example 1 39.6 g of phenyltrimethoxydecane and 64_0 g of (3-ethyloxycyclobutane-3-yl)propyltriethoxydecane were placed in a 500 mL three-necked flask, followed by addition of a methyl group. Isobutyl ketone 100 g, the mixed solution obtained by dissolving was stirred with a magnet stirrer 'heated to 60 ° C. 8.6 g of ion-exchanged water containing 1% by weight of oxalic acid was continuously added to the above mixed solution over 1 hour. After reacting at 60 ° C for 4 hours, the resulting reaction solution was cooled to room temperature. Thereafter, the alcohol portion of the reaction by-product was distilled off from the reaction liquid under reduced pressure. The polymer [C-1] had a weight average molecular weight of 1,600. Synthesis Example 2 48.8 g of dimethoxydecane and 49.2 g of 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane were placed in a 500 mL three-necked flask, followed by the addition of propylene glycol methyl ether acetate 100 g. The mixed solution obtained by the dissolution was stirred with a magnet stirrer and heated to 60 °C. 8.6 g of ion-exchanged water containing 1% by weight of oxalic acid was continuously added to the above mixed solution over 1 hour. After reacting at 60 ° C for 4 hours, the resulting reaction solution was cooled to room temperature. Thereafter, the alcohol portion of the reaction by-product was distilled off from the reaction liquid under reduced pressure. The polymer [C-2] had a weight average molecular weight of 2,000. Synthesis Example 3 - 80 - 200903154 40.4 g of tetramethoxydecane and 47.2 g of 3-glycidylpropyltrimethoxydecane were placed in a 500 mL three-necked flask, followed by the addition of propylene glycol methyl ether 1 〇〇g, which was obtained by dissolution. The mixed solution was stirred with a magnet stirrer 'heated to 60 T:. 8.6 g of ion exchange water containing 1% by weight of oxalic acid was continuously added to the above mixed solution over 1 hour. After reacting at 60 ° C for 4 hours, the resulting reaction solution was cooled to room temperature. Thereafter, the alcohol portion of the reaction by-product was distilled off from the reaction liquid under reduced pressure. The polymer [C-3] had a weight average molecular weight of 1,400. Synthesis Example 4 27.2 g of methyltrimethoxydecane and 39.2 g of 3-hydrothiotrimethoxylate were placed in a 5-inch flask of 5 〇〇mL, followed by the addition of 1 g of propylene glycol methyl ether. The mixed solution was stirred with a magnet stirrer 'heated to 60. (: 8.6 g of ion-exchanged water containing 1% by weight of oxalic acid was continuously added to the above mixed solution over 1 hour. After reacting at 60 ° C for 4 hours, the resulting reaction liquid was cooled to room temperature. Thereafter, the reaction was carried out. The alcohol component of the by-product is distilled off under reduced pressure from the reaction liquid. The weight average molecular weight of the polymer [c-4] is 1,900. Example 1 [Preparation of a sensitive radiation linear resin composition] The above Synthesis Example 1 will be contained. The solution of the polymer [A-1] of the synthesized [A] component is equivalent to 4, 4, - [b] of the [B] component corresponding to 100 parts by weight of the copolymer [A-1] (4-(Bu [4-hydroxyphenyl]-methylethyl)-81 - 200903154 Phenyl)-ethylidene]bisphenol (ι_〇莫耳) with 丨, 2_naphthoquinonediazide_5_ 30 parts by weight of the condensate (B-1) of sulfonic acid chloride (2.0 mol) and 3 parts by weight of the polymer [c_1] (solids) are mixed, and dissolved in a smear of ethyl acetate to make the solid concentration become After 30% by weight, a solution of a radiation sensitive linear resin composition (S_1) was prepared by filtration through a membrane having a pore size of 22 μΐΏ. Examples 2 to 16 and Comparative Example 1 [sensitive radiation] (Preparation of Resin Composition) A composition solution (S-2) was prepared in the same manner as in Example 1 except that the components (A) and [B] in the first embodiment were used in the amounts and amounts shown in Table 1. S-16) and (s-1) In the examples 2, 6, 10, and 14, the description of the component [B] indicates that two kinds of 1,2-naphthoquinonediazide compounds are used in combination. 7 In the example, the preparation was carried out in the same manner as in Example 1 by dissolving in diethylene glycol ethyl methyl ether/propylene glycol monomethyl ether acetate = 6/4, and making the solid content concentration 2% by weight and adding (F). As a composition, a solution (S -1 7 ) of a radiation sensitive linear resin composition is prepared. In Table 1, the abbreviation of the component means the following compound: (Bl) : 4,4'-[1-( 4_ (hydroxybenzene) a condensate of phenyl)ethylidene]bisphenol (1.0 mol) with hydrazine, 2_naphthoquinonediazide-5-sulfonic acid chloride (2.0 mil) (B) -2) : 4,4'-[1_(4·(卜卜-hydroxyphenylbubumethylethyl)-82- 200903154 phenyl) hypochlorous (1.0) (B. 1,2-naphthoquinone (F: Condensate of ethyl]bisphenol (1·〇mol) and I,2-naphthoquinonediazide-5-sulfonic acid I) 3): 2,3,4,4'-tetrahydroxybenzophenone (1.0 mol) and diazide-5-sulfonate (2.44 mol) SH-28PA (Dollywood Dowcornig Silicone Co., Ltd.) -83 - 200903154 Other ingredients parts by weight 1 1 1 1 II 1 1 1 1 1 i 1 1 1 1 1 L Type 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 E遁minus 1 to the secret domain] Secret fr酹ni rA « c component parts by weight mmmm cn cn m cn mmmm type 1-4 ύ C-2 r〇ΰ 0 ί—Η ΰ C-2 m 1 U C-4 ύ C-2 cn 0 C-4 rH ό C-2 ro ό 丨——I 1 u 1 B component; parts by weight ο 20/10 O m 10/10 1 CN o (N 1 lo/io | (N 10/10 in <N Type 丨Bl 1 Bl/B-2 1 B-3 1 1—Η ώ 1 Β-1 1 Bl/B-2 1 B-3 | 1 b-ι 1 1 N ώ Bl/B-2 1 B-3 1 ώ 1 Bl I Bl/B-2 1 B-3 1 Bl 1 b-ι 1 Η m Copolymer A Parts by weight ο o ο ο Ο Ο 100 100 O o 100 〇O oo 100 100 o rH o T—^ ο 种类 Type ____ _^__ -Al 1 Α-1 Γ Α-2 1 Α-2 I 1 A-2 1 1 A-2 ] 1 Α-3Π 1 A-3 1 A-3 1 A-3 I A-4 | ! A-4 1 A-4 1 1 A-4 Π Γ Al Α-1 Composition species 1_ 1 (SD 1 (S-2) | 1 (S-3) | 1 (S -4) I 1 (S-5) Ί 1 (S-6) 1 1 (S-7) | 1 (S-8) 1 1 (S-9) | 1 (S-10) 1 | (s- 11) | 1 (S-12) 1 1 (S-13) 1 (S-14) I (s-i5) ! 1 (S-16) I | (S-17)n ι 1 Embodiment 1 Example 2 Example 3 Example 4 Example 5 1 Example 6 1 Example 7 I Example 8 1 "Example 9 1 Example 1" "Example ii 1 Example 12 | Example 13 1 Example 14 Example 15 Example 16 Example π Comparative Example 1 -84- 200903154 Example 1 8 to 3 4. Comparative Example 2 <Performance Evaluation of Interlayer Insulating Film> Using the above-described sensitive radiation linear resin composition, various characteristics of the interlayer insulating film were evaluated as follows. [Evaluation of Sensitivity] Example 1 8 to 3 3. In Comparative Example 2, the composition shown in Table 2 was applied onto a ruthenium substrate using a spin coater, and then 90 Å on a hot plate. (: Pre-baking was performed for 2 minutes to form a coating film having a film thickness of 3 · 0 μη. For the application of Example 34, using a slit die coater, vacuum drying was performed at 5 Torr, on a hot plate. Pre-baking at 9 (TC for 2 minutes to form a coating film having a film thickness of 3. 〇μιη. For the obtained coating film, a PLA_5〇lF exposure machine made of Canon (with a pattern) having a predetermined pattern (ultra-high pressure) Mercury lamp), after changing the exposure time, after exposure, use the tetramethylammonium hydroxide aqueous solution at the concentration of Table 2, and use the developer at a concentration of 〇. 4% at 25 ° C for 80 seconds, using 2 _ At the concentration of 3 8 % of the developer, the solution was developed for 50 seconds, then washed with running water for 1 minute using ultrapure water, and dried to form a pattern on the wafer. In order to make the line and space of 3.0 Mm The spatial pattern of (1 〇: 1 ) is completely dissolved, and the necessary exposure amount is measured. This number is the sensitivity, as shown in Table 2. When the number 値 is 1,0 0 〇J/m2 or less, the sensitivity is good. Evaluation of development safety factor] Example 1 8 to 3 3, Comparative Example 2 using a spin coater as shown in Table 2 The composition of -85-200903154 was applied onto a ruthenium substrate, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film of 3 _ Ο μηι. For the example 34, a slit die type was used. The coating machine was applied, vacuum dried at 0.5 Τ rr, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. The resulting coating film had a 3.0 μηι The pattern of the line and space (10:1) is measured using the PLA-5 01F exposure machine (ultra-high pressure mercury lamp) manufactured by Canon (the evaluation of the sensitivity). The exposure amount of the sensitivity 进行 was exposed, and the development time was changed at a temperature of 25 ° C at a concentration of tetramethylammonium hydroxide aqueous solution of Table 2, and development was carried out by a liquid-liquid method. Then, ultra-pure water was used for 1 minute of running water. After cleaning, after drying, a pattern is formed on the wafer. At this time, the development time required to make the line width of 3·0 μm is the optimum development time, as shown in Table 2. The measurement is continued by the optimum development time. When developing, the line pattern of 3.0 μm is peeled off. The development safety factor is shown in Table 2. When the number is more than 30 seconds, the development safety factor is good. [Evaluation of Solvent Resistance]

實施例1 8〜3 3、比較例2使用旋轉塗佈機將表2所示 之組成物塗佈於矽基板上後，在加熱板上以90°C進行2分 鐘預烘烤，形成塗膜。對於實施例3 4使用狹縫模具式塗 佈機塗佈，以0.5T〇rr進行真空乾燥後，在加熱板上以 9 0°C進行2分鐘預烘烤，形成塗膜。對於製得之塗膜使用 Canon (股）製PLA-501F曝光機（超高壓水銀燈）進行曝 光使累積曝光量成爲3,0 00J/m2，在潔淨烘箱內，以220°C -86- 200903154 加熱此矽基板1小時，得到3.0 μπι的硬化膜。測定製得之 硬化膜之膜厚（Τ 1 )。將形成此硬化膜之矽基板浸漬於溫 度控制在7 0 °C之二甲基亞中2 0分鐘後，測定各該硬化 膜之膜厚（ti)，計算由浸漬所產生之膜厚變化率{1^-T1 |/T1 }xl00〔 ％〕。結果如表2所示。此數値爲5%以下 時，表示耐溶劑性良好。 耐溶劑性之評價係形成之膜不需要形成圖案化’因此 省略輻射線照射步驟及顯影步驟，僅以塗膜形成步驟、後 烘烤步驟及加熱步驟進行評價。 〔耐熱性之評價〕 與上述耐溶劑性之評價相同形成硬化膜，測定製得之 硬化膜之膜厚（T2 )。將此硬化膜基板在潔淨烘箱內以 240 °C追加烘烤1小時後，測定各該硬化膜之膜厚（t2 ) ’ 計算追加烘烤所產生之膜厚變化率{|t2-T2|/T2}xl00〔 ％〕 。結果如表2所示。此數値爲5%以下時，表示耐熱性良 好。 〔硬化膜密著性之評價〕 與上述耐溶劑性之評價相同形成硬化膜，將預先塗佈 環氧樹脂之具有直徑0.27cm之圓形接著面之鋁製柱螺栓 銷（stud pin ) ( QUAD公司製）對於基板時，栓銷成垂 直狀接著於硬化膜上，在潔淨烘箱內以1 5 0 °C烘烤1小時 ，使環氧樹脂硬化。然後，使用拉伸試驗機「Motorized -87- 200903154Example 1 8 to 3 3. Comparative Example 2 The composition shown in Table 2 was applied onto a ruthenium substrate using a spin coater, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film. . The film of Example 34 was applied by a slit die coater, vacuum dried at 0.5 T rr, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film. For the obtained coating film, a Canon-type PLA-501F exposure machine (ultra-high pressure mercury lamp) was used for exposure so that the cumulative exposure amount was 3,00 00 J/m 2 , and it was heated in a clean oven at 220 ° C -86 - 200903154 This ruthenium substrate was allowed to stand for 1 hour to obtain a cured film of 3.0 μm. The film thickness (Τ 1 ) of the obtained cured film was measured. The ruthenium substrate on which the cured film was formed was immersed in a dimethyl phase at a temperature controlled at 70 ° C for 20 minutes, and the film thickness (ti) of each of the cured films was measured, and the film thickness change rate by the immersion was calculated. {1^-T1 |/T1 }xl00[ %]. The results are shown in Table 2. When the number 値 is 5% or less, the solvent resistance is good. The film formed by the evaluation of the solvent resistance does not need to be patterned. Therefore, the radiation irradiation step and the development step are omitted, and evaluation is performed only by the coating film forming step, the post-baking step, and the heating step. [Evaluation of heat resistance] A cured film was formed in the same manner as the evaluation of the solvent resistance described above, and the film thickness (T2) of the obtained cured film was measured. The cured film substrate was additionally baked at 240 ° C for 1 hour in a clean oven, and the film thickness (t2 ) of each of the cured films was measured. 'The film thickness change rate due to the additional baking was calculated {|t2-T2|/ T2}xl00[ %]. The results are shown in Table 2. When the number 値 is 5% or less, the heat resistance is good. [Evaluation of the adhesion of the cured film] A cured film was formed in the same manner as the evaluation of the solvent resistance described above, and an aluminum stud pin having a circular back surface having a diameter of 0.27 cm was applied in advance ( QUAD). When the substrate is used, the pins are vertically placed on the cured film, and baked in a clean oven at 150 ° C for 1 hour to harden the epoxy resin. Then, use a tensile tester "Motorized -87- 200903154

Stand SDMS-0201-100SL (股）今田製作所製」拉伸柱螺 栓銷，測定基板與硬化膜剝離時的力量。此時力的數値如 表2所示。此數値爲1 5 0N以上時，表示對基板之密著性 良好。 〔透明性之評價〕 除了使用玻璃基板「Corning 7059 ( Corning公司）製 造」取代上述耐溶劑性之評價中之矽基板外，其餘同樣在 玻璃基板上形成硬化膜。使用分光光度計「1 50-20型 double beam (日立製作所製）」以400〜800nm之範圍之 波長測定具有此硬化膜之玻璃基板之光線透過率。此時之 最低透過率値如表2所示。此數値爲9 0 %以上時，表示透 明性良好。 〔比介電率之評價〕 實施例1 8〜3 4、比較例2使用旋轉塗佈機將表2所示 之組成物塗佈於硏磨後之S U S 3 04製基板上後，在加熱板 上以90 °C進行2分鐘預烘烤，形成3.0 μιη之塗膜。對於實 施例3 5使用狹縫模具式塗佈機塗佈，以〇 . 5 Torr進行真空 乾燥後，在加熱板上以9 Ot進行2分鐘預烘烤，形成膜厚 3.0μιη之塗膜。對於製得之塗膜使用Canon (股）製PLA-5〇lF曝光機（超高壓水銀燈）進行曝光使累積曝光量成 爲3,〇〇〇J/m2，在潔淨烘箱內，以220 °C燒結此基板1小時 ’得到硬化膜。對此硬化膜藉由蒸鍍法形成Pt/Pd電極圖 -88- 200903154 案，作成介電率測定用試片。以頻率1 0kHz之頻率使用橫 河 *Huletpakad (股）製 HP16451B 電極及 HP4284A 軸承 LCR測定計，藉由CV法測定該基板之比介電率。結果如 表2所示。此數値爲3.9以下時，表示介電率良好。 介電率之評價中，形成之膜不需要形成圖案化，因此 省略輻射線照射步驟及顯影步驟，僅以塗膜形成步驟、後 烘烤步驟及加熱步驟進行評價。 表2 組成 物種 感度評價 顯影安全係數 顯影液濃度(wt%) 感度(J/cm2) 最佳顯影時間(秒) 顯影安全係數(秒） 實施例18 (S-1) 0.4 650 80 50 實施例19 (S-2) 0.4 600 80 55 實施例20 (S-3) 0.4 600 80 60 實施例21 (S-4) 0.4 600 80 45 實施例22 (S-5) 2.38 600 50 40 實施例23 (S-6) 2.38 550 50 45 實施例24 (S-7) 2.38 550 50 50 實施例25 (S-8) 2.38 550 50 40 實施例26 (S-9) 0.4 600 80 45 實施例27 (S-10) 0.4 550 80 50 實施例28 (S-11) 0.4 550 80 45 實施例29 (S-12) 0.4 600 80 45 實施例30 (S-13) 2.38 650 50 50 實施例31 (S-14) 2.38 600 50 55 實施例32 (S-15) 2.38 600 50 55 實施例33 (S-16) 2.38 650 50 45 實施例34 (S-17) 0.4 650 80 50 比較例2 (s-1) 0.4 700 80 30 -89- 200903154 表2(續Stand SDMS-0201-100SL (share) The tension column screw pin made by Imadea Co., Ltd. measures the force at which the substrate and the cured film are peeled off. The number of forces at this time is shown in Table 2. When the number 値 is 150N or more, the adhesion to the substrate is good. [Evaluation of Transparency] A cured film was formed on the glass substrate in the same manner as in the case of using the glass substrate "Corning 7059 (manufactured by Corning Co., Ltd.)" instead of the substrate for evaluation of the solvent resistance. The light transmittance of the glass substrate having the cured film was measured by a spectrophotometer "1 50-20 type double beam (manufactured by Hitachi, Ltd.)" at a wavelength in the range of 400 to 800 nm. The lowest transmittance at this time is shown in Table 2. When the number 値 is 90% or more, the transparency is good. [Evaluation of Specific Dielectric Rate] Example 1 8 to 3 4. Comparative Example 2 The composition shown in Table 2 was applied onto a honed SUS 3 04 substrate by a spin coater, and then heated on a heating plate. The film was prebaked at 90 ° C for 2 minutes to form a coating film of 3.0 μm. The film was applied by a slit die coater in Example 35, vacuum dried at 0.5 Torr, and prebaked on a hot plate at 9 Ot for 2 minutes to form a coating film having a film thickness of 3.0 μm. For the obtained coating film, a PLA-5〇lF exposure machine (ultra-high pressure mercury lamp) manufactured by Canon was used to expose the cumulative exposure amount to 3, 〇〇〇J/m2, and sintered at 220 ° C in a clean oven. This substrate obtained a cured film for 1 hour. On the hardened film, a Pt/Pd electrode pattern -88-200903154 was formed by a vapor deposition method to prepare a test piece for dielectric constant measurement. The specific dielectric constant of the substrate was measured by the CV method using a cross-channel *Huletpakad (manufactured) HP16451B electrode and an HP4284A bearing LCR meter at a frequency of 10 kHz. The results are shown in Table 2. When the number 値 is 3.9 or less, the dielectric constant is good. In the evaluation of the dielectric constant, the formed film does not need to be patterned, and therefore the radiation irradiation step and the development step are omitted, and evaluation is performed only by the coating film forming step, the post-baking step, and the heating step. Table 2 Composition Species Evaluation Development Safety Factor Developer Concentration (wt%) Sensitivity (J/cm2) Optimal Development Time (seconds) Development Safety Factor (seconds) Example 18 (S-1) 0.4 650 80 50 Example 19 (S-2) 0.4 600 80 55 Example 20 (S-3) 0.4 600 80 60 Example 21 (S-4) 0.4 600 80 45 Example 22 (S-5) 2.38 600 50 40 Example 23 (S -6) 2.38 550 50 45 Example 24 (S-7) 2.38 550 50 50 Example 25 (S-8) 2.38 550 50 40 Example 26 (S-9) 0.4 600 80 45 Example 27 (S-10 0.4 550 80 50 Example 28 (S-11) 0.4 550 80 45 Example 29 (S-12) 0.4 600 80 45 Example 30 (S-13) 2.38 650 50 50 Example 31 (S-14) 2.38 600 50 55 Example 32 (S-15) 2.38 600 50 55 Example 33 (S-16) 2.38 650 50 45 Example 34 (S-17) 0.4 650 80 50 Comparative Example 2 (s-1) 0.4 700 80 30 -89- 200903154 Table 2 (continued

實施例3 5〜5 0、比較例3 <微透鏡之性能評價> 使用上述製備之敏輻射線性樹脂組成物，如下述評價 微透鏡之各種特性。耐熱性之評價、透明性之評價及密著 性之評價可參照上述層間絕緣膜之性能評價的結果。 〔感度之評價〕 實施例3 5〜5 0、比較例3使用旋轉塗佈機將表3所示 -90- 200903154 之組成物塗佈於矽基板上後，在加熱板上以9 0 °C進行2分 鐘預烘烤，形成2·0μπι之塗膜。對於製得之塗膜經由具有 所定圖案之圖案光罩以NIKON (股）製NSR1755i7A縮小 投影曝光機（N A = 0 · 5 0，λ = 3 6 5 n m )，改變曝光時間進行 曝光，使用表3之濃度之四甲基氫氧化銨水溶液，以25 °C 、進行1分鐘之盛液顯影。然後以水清洗乾燥，在晶圓上 形成圖案。測定〇 . 8 μηι之線與空間圖案（1 : 1 )之空間線 寬成爲0 · 8 μ m所需要之曝光時間。此數値爲感度，如表3 所示。此數値爲2,00(U/m2以下時，表示感度良好。 〔顯影安全係數之評價〕 實施例3 5〜5 0、比較例3使用旋轉塗佈機將表3所示 之組成物塗佈於矽基板上後，在加熱板上以90 °C進行2分 鐘預烘烤’形成2.0 μηι之塗膜。對於製得之塗膜經由具有 所定圖案之圖案光罩以NIKON (股）製NSR1755i7A縮小 投影曝光機（ΝΑ = 0.50，λ = 365ηη〇 ，以相當於上述「〔 感度之評價〕」所測定之感度値的曝光量進行曝光，在以 表3之濃度之四甲基氫氧化銨水溶液，以2 5乞進行丨分鐘 之盛液顯影。然後以水進行1分鐘之水清洗，使之乾燥， 在晶圓上形成圖案。測定0.8 μιη之線空間圖案（1 : 1 )之 間線寬成爲0 _ 8 μ m所需要之顯影時間爲最佳顯影時間， 如表3所示。測定由最佳顯影時間後，再繼續顯影時， 0.8μηι之圖案產生剝離爲止的時間（顯影安全係數），顯 影安全係數如表3所示。此數値爲3 0秒以上時，表示顯 -91 - 200903154 影安全係數佳。。 〔微透鏡之形成〕 實施例3 5〜5 0、比較例3使用旋轉塗佈機將表3所示 之組成物塗佈於矽基板上後，在加熱板上以9 0 °C進行2分 鐘預烘烤，形成2.0 μηι之塗膜。對於製得之塗膜經由具有 4_0μιη點·2.0μιη空間圖案之圖案光罩，以NIKON (股）製 NSR1 7 5 5 i7A 縮小投影曝光機（ΝΑ = 0_50，λ = 365ηπ〇 ，以 相當於上述「〔感度之評價〕」所測定之感度値之曝光量 進行曝光，使用表3之感度之評價之顯影液濃度之四甲基 氫氧化銨水溶液，以25t、進行1分鐘之盛液顯影。然後 用水清洗，經乾燥在晶圓上形成圖案。然後使用Canon ( 股）製PLA-501F曝光機（超高壓水銀燈）進行曝光使累 積曝光量成爲3,000J/m2。然後再使用加熱板以160°C加熱 1 〇分鐘後，再以2 3 0 °C加熱1 0分鐘，使圖案熔融，形成 微透鏡。 形成之微透鏡之底部（接觸基板的面）之尺寸（直徑 )及斷面形狀如表3所示。微透鏡之底部之尺寸超過 4.0μιη，且未達 5.0μιη時，表示良好。此尺寸超過 5.0μηι 時，相鄰之透鏡爲彼此接觸的狀態，不理想。斷面形狀如 圖1所示之模式圖中，如（a )之半凸透鏡形狀時，表示 良好，又如（b )之略台形狀時表示不佳。 -92- 200903154Example 3 5 to 50, Comparative Example 3 <Performance Evaluation of Microlens> Using the sensitive radiation linear resin composition prepared above, various characteristics of the microlens were evaluated as follows. The evaluation of heat resistance, the evaluation of transparency, and the evaluation of adhesion can be referred to the results of performance evaluation of the above interlayer insulating film. [Evaluation of Sensitivity] Example 3 5 to 50. Comparative Example 3 The composition of -90 to 200903154 shown in Table 3 was applied onto a ruthenium substrate using a spin coater, and then 90 ° C on a hot plate. Prebaking was carried out for 2 minutes to form a coating film of 2.0 μm. For the obtained coating film, the NSR1755i7A NJ1755i7A reduced projection projection machine (NA = 0 · 50, λ = 3 6 5 nm) was passed through a patterned mask having a predetermined pattern, and the exposure time was changed for exposure. Table 3 was used. The aqueous solution of tetramethylammonium hydroxide at a concentration was developed at 25 ° C for 1 minute. It is then washed and dried with water to form a pattern on the wafer. Measure the exposure time required for the line width of the 8 μηι line and the space pattern (1 : 1 ) to be 0 · 8 μ m. This number is the sensitivity, as shown in Table 3. When the number 値 is 2,00 (U/m2 or less, the sensitivity is good. [Evaluation of development safety factor] Example 3 5 to 50, Comparative Example 3 The composition shown in Table 3 was coated using a spin coater. After being placed on a ruthenium substrate, it was prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film of 2.0 μm. The resulting coating film was NSR1755i7A made by NIKON Co., Ltd. via a pattern mask having a predetermined pattern. Reduce the projection exposure machine (ΝΑ = 0.50, λ = 365ηη〇, and expose it to the exposure amount corresponding to the sensitivity 测定 measured by the above [[Evaluation of Sensitivity]], and apply the tetramethylammonium hydroxide aqueous solution at the concentration shown in Table 3. The solution was developed with a bath for 2 minutes, then washed with water for 1 minute, dried, and patterned on the wafer. The line width between the line patterns (1: 1) of 0.8 μm was measured. The development time required to be 0 _ 8 μm is the optimum development time, as shown in Table 3. The time until the pattern of 0.8 μηι is peeled off after the optimum development time is measured and the development is continued (development safety factor) The development safety factor is shown in Table 3. When the enthalpy is 30 seconds or longer, it indicates that the image-safeness coefficient is good - 91 - 200903154. [Formation of microlenses] Example 3 5 to 5 0, Comparative Example 3 The composition shown in Table 3 was used using a spin coater. After being coated on a ruthenium substrate, it was prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film of 2.0 μm. The resulting coating film was passed through a pattern mask having a space pattern of 4_0 μm point · 2.0 μm NSK1 7 5 5 i7A NSK1 7 5 5 i7A reduces the projection exposure machine (ΝΑ = 0_50, λ = 365ηπ〇, and exposes the exposure amount corresponding to the sensitivity measured by the above [[Evaluation of Sensitivity]]. The developing solution concentration of tetramethylammonium hydroxide solution of the sensitivity of 3 was developed at 25t for 1 minute, then washed with water, dried to form a pattern on the wafer, and then used to make a PLA wafer. -501F exposure machine (ultra-high pressure mercury lamp) was exposed to make the cumulative exposure amount 3,000 J/m2, and then heated at 160 ° C for 1 〇 using a hot plate, and then heated at 203 ° C for 10 minutes to make the pattern Melt, forming microlenses. The size (diameter) and cross-sectional shape of the bottom of the lens (the surface contacting the substrate) are shown in Table 3. The size of the bottom of the microlens exceeds 4.0 μm, and when it is less than 5.0 μm, it indicates good. When the size exceeds 5.0 μm The adjacent lenses are in contact with each other, which is not ideal. The cross-sectional shape is as shown in the pattern diagram shown in Fig. 1. When the shape of the semi-convex lens of (a) is good, it is good, and when the shape of the table is (b) Poor performance. -92- 200903154

微透鏡形狀底 g g g S g g S s 部之尺寸(mm) 寸 — m — (N — 寸· 寸· 寸 m ^J- 1—^ (N 寸· 寸 寸· cn — (Ν 寸· l〇 (N — 寸· — 顯影安全係數 顯影安全係數(秒） 〇 m ίΓϊ ΓΛ o ο m o ο m κη m (Τ) m 〇 ο 最佳顯影時間(秒) § § g § g § § § ο ι—Η CN r*^ Η ^-H ο Ο ί—Η »-Η ο r—Η Ο 1—^ ο i Η 1 ( (N r—H r—Μ o ί—H m[ 鳐 & /—N 鏺 姻 靡 Ο 寸· Ο o 寸 ο 〇〇 m 00 m 00 m 00 m 寸 ο 寸 Ο 寸 ο 寸 ο ΟΟ m 00 m 00 m 00 m 寸 o 擦 N>\ im /1v7 Omi1 tS W cn (η οο /—V Ο /—Ν r? 1—^ ?'·Ή rJN 1 1 < (n /—N Ό /—N ^-H 巴 巴 巴 I 1 1 1 1 1 m m m 00 m Os m o IT—Η OJ cn m m 匡 m m m Μ 習 辑 辑 m 習 習 辑 辑 辑 辑 蜀 辑 辑 辑 辑 鎰 IK IK 卹 1¾ |i( IK W |ι； IK IK IK * 1皿; IK j_j J-X -93- 200903154 實施例5 1 〔敏輻射線性樹脂組成物之製備〕 將含有上述合成例5合成之〔A-5〕之聚合物溶液（ 相當於共聚物〔A-5〕100重量份（固形份）與[B]成分之 4,4’-[l- ( 4- ( 1-[4 -羥苯基]-1-甲基乙基）苯基）次乙基] 雙酚（1莫耳）與1,2-萘醌二疊氮-5-磺酸氯（2莫耳）之 縮合物（4,4，-[l- ( 4- ( 1-[4 -羥苯基]-1-甲基乙基）苯基） 次乙基]雙酚-1,2-萘醌二疊氮-5-磺酸酯）20重量份、四〔 (3 -乙基氧雜環基烷-3-基）甲基〕矽酸酯之縮合物2重量 份及γ -甲基丙稀氧基丙基三甲氧基矽院5重量份予以混合 ，溶解於丙二醇單甲醚乙酸酯，使固形份濃度成爲3 0重 量％後，以孔徑0.5μηι之微孔過濾器過濾，製備敏輻射線 性樹脂組成物之溶液（S - 5 1 )。 層間絕緣膜之評價 (I )圖案狀薄膜之形成 使用旋轉器在玻璃基板上塗佈上述組成物溶液（S - 5 1 )後，以80°C在加熱板上預烘烤3分鐘，形成塗膜。 然後’使用所定圖案光罩，對於製得之塗膜照射波長 3 65nm之強度爲l〇mw/Cm2的紫外線15秒。其次，藉由 0.5重量％氫氧化四甲銨物水溶液，在2 5。(：下顯影1分鐘 後’以純水洗淨1分鐘，藉此除去不需要的部份。 對於上述形成的圖案照射波長3 6 5nm之強度爲 1 OmW/cm2的紫外線3 0秒後’在烤箱中以220 °C加熱60分 -94- 200903154 鐘，製得膜厚3μιη之圖案狀薄§吴。 另外，除了預烘烤溫度爲9〇t：、l〇〇°C外，與 同操作，形成預烘烤溫度不同之3種圖案狀薄膜。 (11 )解像度之評價 上述（I)所得之圖案狀薄膜中，擷取 5 μ m X 5 μ m孔）可解像時評價爲「〇」，無法解像時 「X」。結果如表4所示。 (III)耐熱尺寸安定性之評價 上述（I )中，將預烘烤溫度8 0 °C所形成的薄 於烤箱中以2 2 0 °C加熱6 0分鐘。加熱前後之膜厚之 如表5所示。此時之尺寸變化率在加熱前後，在 時，耐熱尺寸安定性良好’尺寸變化率超過5 %時 不良。 (IV )透明性之評價 上述（I )中，將預烘烤溫度8 0 °c所形成的圖 膜之4〇Onm之透過率使用分光光度計（150-20型 (股）日立製作所製）測定，進行透明性之評價。 表5所示。此時透過率爲9 0 %以上時，表示透過性 未達90%時，表示透過性不良。 (V )耐熱變色性之評價 上述相 圖案（ :評價爲 膜圖案 變化率 5 %以內 ，表示 案狀薄 雙光束 結果如 良好， -95- 200903154 將上述（I )中具有預烘烤溫度8 0 °C所形成之圖案狀 薄膜之基板，藉由在2 5 0 之烤箱中加熱1小時’加熱前 後之圖案狀薄膜之透過率之變化’評價耐熱變色性。此時 結果如表5所示。變化率未達5 %時’表示耐熱變色性良 好，超過5%時’表示不良。又’透過率係與（IV)透明 性之評價相同。 (VI )密著性之評價 將上述（I )中具有預烘烤溫度80°C所形成之圖案狀 薄膜之密著性藉由壓力鍋試驗（120°C '濕度100%、4小 時）後之棋盤格子剝離試驗來評價。此時結果如表5所示 。評價結果係以1 〇 〇個棋盤格子中，殘留的棋盤格數來表 示。 (V 11 )保存安定性之評價 將上述組成物溶液在40 °c之烤箱中加熱1週，藉由加 熱前後之黏度變化評價保存安定性。此時之黏度變化率如 表4所示。變化率未達5 %時，表示保存安定性良好，超 過5 %時，表示保存安定性不良。 微透鏡之評價 (I)微透鏡之形成 使用旋轉塗佈機於6英寸矽基板上塗佈上述組成物溶 液（S-51 ) ’形成2·5μιη的膜厚，以”。(^在加熱板上預烘 -96- 200903154 烤3分鐘，形成塗膜。 然後，使用所定圖案光罩，對於製得之塗膜照射 43 6nm之強度爲1 〇mw/cm2的紫外線。其次，藉由2 3 8重 量°/。氫氧化四甲銨物水溶液，在2 5 t下顯影1分鐘後，以 純水洗淨1分鐘’藉此除去不需要的部份，形成圖案。 對於上述形成的圖案照射436nm之強度爲l〇mW/cm2 的紫外線2 0 0 m J / c m2後，以1 6 0 °C加熱1 〇分鐘後，再以 23 0°C加熱10分鐘，使圖案熔融，形成微透鏡。 (II )感度之評價 上述（I )所得之熔融後之微透鏡圖案之0.8 μιη線與 空間圖案（1 〇比Ο之空間線寬可解像之最低照射量如表 6所示。此値爲1 〇 〇 m ]/ c m2以下時，表示解像度良好，感 度超過100mJ/cm2時，表示解像度不良。 (III)透明性之評價 與上述（I )相同，在玻璃基板上形成圖案狀薄膜。 對於形成熔融後之微透鏡圖案之玻璃基板’其4 〇 〇 n m 之透過率使用分光光度計（150_20型雙光束（股）日立製 作所製）測定’進行透明性之評價。此時40 〇nm之透過率 如表6所示。透過率爲90〜1〇〇 %時’表示透過率良好， 未達90%時，表示透過率不良。 (IV)耐熱透明性之評價 -97- 200903154 將具有上述（ΙΠ )中所形成之圖案狀薄膜之玻璃基板 ，藉由在2 5 0 °C之烤箱中加熱1小時，加熱前後之圖案狀 薄膜之透過率之變化’評價耐熱透明性。此時透過率之變 化率如表6所示。變化率未達5 %時’表示耐熱透明性良 好，超過5 %時’表示不良。又，透過率係與（III)透明 性之評價相同。 (V)密著性之評價 將上述（1 )中所形成之圖案狀薄膜之密著性藉由壓 力鍋試驗（1 20 °C、濕度100% ' 4小時）後之棋盤格子剝 離試驗來評價。此時結果如表6所示。評價結果係以1 00 個棋盤格子中，殘留的棋盤格數來表示。 (VI )耐溶劑性之評價 將具有與上述（III )同樣形成之圖案狀薄膜之玻璃基 板浸漬於溫度5 0 °C之異丙醇中1 〇分鐘’評價膜厚變化。 此時之變化率如表6所示。變化率爲0〜5 %時，表示耐溶 劑性良好，超過5 %時’表示耐溶劑性不良。 實施例52 將含有合成例6所得之共聚物〔A - 6〕之聚合物溶液 (相當於共聚物〔A-6〕100重量份（固形份）與[b]成分 之4,4，-[l - ( 4- ( 1-[4 -羥苯基]-1-甲基乙基）苯基）次乙 基]雙酚（1莫耳）與丨，2·萘醌二疊氮-5-磺酸氯（2莫耳） -98- 200903154 之縮合物（4,4’-[l - (4- ( l-[4 -羥苯基]-1-甲基乙基）苯基 )次乙基]雙酚-1，2-萘醌二疊氮-5-磺酸酯）20重量份、四 〔（3-乙基氧雜環基烷-3-基）甲基〕矽酸醋之縮合物2重 量份及γ -甲基丙儲氧基丙基三甲氧基砂院5重里份予以卞比 合，溶解於丙二醇單甲醚乙酸酯’使固形份濃度成爲31 重量％後，以孔徑0.5 μ m之微孔過濾器過濾’製備敏輻射 線性樹脂組成物之溶液（S - 5 2 )。結果如表4〜6所示。 實施例5 3 將含有合成例7所得之共聚物〔A-7〕之聚合物溶液 (相當於共聚物〔A-7〕100重量份（固形份）與[B]成分 之4,4’-[l - ( 4- ( 1-[4-羥苯基]-1-甲基乙基）苯基）次乙 基]雙酚（1莫耳）與1,2 -萘醌二疊氮-5-磺酸氯（2莫耳） 之縮合物（4,4’-[l - ( 4- ( 1-[4 -羥苯基]-1-甲基乙基）苯基 )次乙基]雙酚-1，2 -萘醌二疊氮-5 -磺酸酯）1 8重量份 '四 〔（3-乙基氧雜環基烷-3-基）甲基〕矽酸酯之縮合物2重 量份及γ-甲基丙烯氧基丙基三甲氧基矽烷5重量份予以混 合’溶解於丙二醇單甲醚乙酸酯，使固形份濃度成爲3〇 重量％後’以孔徑〇 . 5 μπι之微孔過濾器過濾，製備敏輻射 線性樹脂組成物之溶液（S-S3 )。結果如表4〜6所示。 實施例5 4 將含有合成例8所得之共聚物〔α_8〕之聚合物溶液 (相當於共聚物〔Α-8〕100重量份（固形份）與[β]成分 -99- 200903154 之4,4，-[l- ( 4- ( l-[4-羥苯基]-1-甲基乙基）苯基 基]雙酚（1莫耳）與1，2-萘醌二疊氮-5-磺酸氯（2 之縮合物（4,4，-[l - ( 4- ( 1-[4-羥苯基]-1-甲基乙基 )次乙基]雙酚-1,2-萘醌二疊氮-5-磺酸酯）30重量 〔（3 -乙基氧雜環基烷-3-基）甲基〕矽酸酯之縮合 量份及γ-甲基丙烯氧基丙基三甲氧基矽烷5重量份 合，溶解於丙二醇單甲醚乙酸酯，使固形份濃度届 重量％後，以孔徑〇·5μιη之微孔過濾器過濾，製備 線性樹脂組成物之溶液（S-54 )。結果如表4〜6所 比較例4 將含有比較合成例1所得之共聚物〔A- 1 R ]之 溶液（相當於共聚物〔A- 1 R〕1 00重量份（固形 [Β]成分之4,4’-[l - ( 4- ( 1-[4 -經苯基]-ΐ_甲基乙基 )次乙基]雙酚（1莫耳）與I，2-萘醌二疊氮_5_擴g 莫耳）之縮合物（4,4’-[l- ( 4- ( l-[4-羥苯基卜丨-甲 )苯基）次乙基]雙酹-I,2-萘醌二疊氮擴酸g|) 3 份及γ-甲基丙烯氧基丙基三甲氧基矽烷5 mi 里份予 ，溶解於丙二醇單甲醚乙酸酯，使固形份丨農The size of the microlens shape bottom ggg S gg S s (mm) inch - m - (N - inch · inch · inch m ^J- 1 - ^ (N inch · inch inch · cn - (Ν inch · l〇 (N — inch · — development safety factor development safety factor (seconds) 〇m ίΓϊ ΓΛ o ο mo ο m κη m (Τ) m 〇ο optimum development time (seconds) § § g § g § § § ο ι Η CN r*^ Η ^-H ο Ο ί—Η »-Η ο r—Η Ο 1—^ ο i Η 1 ( (N r—H r—Μ o ί—H m[ 鳐& /—N 鏺寸 inch· Ο o inch ο 〇〇m 00 m 00 m 00 m inch ο inch Ο inch ο ο ΟΟ m 00 m 00 m 00 m inch o rub N>\ im /1v7 Omi1 tS W cn (η οο / —V Ο /—Ν r? 1—^ ?'·Ή rJN 1 1 < (n /—N Ό /—N ^-H Babaiba I 1 1 1 1 1 mmm 00 m Os mo IT—Η OJ cn Mm 匡mmm Μ 辑 辑 m 辑 镒 镒 镒 IK IK shirt 13⁄4 | i ( IK W | ι; IK IK IK * 1 IK j_j JX-93-200903154 Example 5 1 [Preparation of sensitive radiation linear resin composition] The polymer solution containing the [A-5] synthesized in the above Synthesis Example 5 (corresponding to the copolymer [A-5] 100 parts by weight (solids) of 4,4'-[l-(4-(1-[4-hydroxyphenyl]-1-methylethyl)phenyl)ethylidene] of [B] Condensate of phenol (1 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2 mol) (4,4,-[l-(4-(1-[4-hydroxybenzene) ]]-1-methylethyl)phenyl)thenyl]bisphenol-1,2-naphthoquinonediazide-5-sulfonate) 20 parts by weight of tetrakis[(3-ethyloxycyclo) 2 parts by weight of a condensate of alkyl-3-yl)methyl]decanoate and 5 parts by weight of γ-methylpropoxypropyltrimethoxyphthalate are mixed and dissolved in propylene glycol monomethyl ether acetate After the solid content concentration was 30% by weight, it was filtered through a micropore filter having a pore diameter of 0.5 μm to prepare a solution (S - 5 1 ) of the radiation sensitive linear resin composition. Evaluation of interlayer insulating film (I) Formation of pattern-like film After coating the above composition solution (S - 5 1 ) on a glass substrate using a spinner, it was prebaked on a hot plate at 80 ° C for 3 minutes to form a coating. membrane. Then, using the predetermined pattern mask, the obtained coating film was irradiated with ultraviolet rays having a wavelength of 3 65 nm and an intensity of 10 μm/cm 2 for 15 seconds. Next, at 0.5% by an aqueous solution of 0.5% by weight of tetramethylammonium hydroxide. (: After 1 minute of development), it was washed with pure water for 1 minute to remove unnecessary portions. The pattern formed as described above was irradiated with ultraviolet rays having a wavelength of 3 6 5 nm and an intensity of 1 OmW/cm 2 for 30 seconds. In the oven, the temperature is heated at 220 °C for 60 minutes -94-200903154 minutes, and the pattern thickness of 3μιη is thin § Wu. In addition, the pre-baking temperature is 9〇t:, l〇〇°C, and the same operation Three kinds of pattern-like films having different pre-bake temperatures were formed. (11) Evaluation of resolution The above-mentioned (I) pattern-like film obtained by extracting 5 μm X 5 μm holes was evaluated as "〇" "X" cannot be resolved. The results are shown in Table 4. (III) Evaluation of heat-resistant dimensional stability In the above (I), the pre-baking temperature of 80 ° C was thinned in an oven at 20 ° C for 60 minutes. The film thickness before and after heating is as shown in Table 5. At this time, the dimensional change rate is good before and after heating, and the heat-resistant dimensional stability is good. When the dimensional change rate exceeds 5%, it is defective. (IV) Evaluation of Transparency In the above (I), the transmittance of 4 〇 Onm of the film formed by the prebaking temperature of 80 ° C was measured using a spectrophotometer (manufactured by Hitachi, Ltd., Model 150-20) The measurement was carried out to evaluate the transparency. Table 5 shows. When the transmittance is 90% or more at this time, it means that the permeability is less than 90%, indicating that the permeability is poor. (V) Evaluation of heat-resistant discoloration property The above phase pattern (: evaluated as a film pattern change rate of 5% or less, indicating that the case-like thin double-beam result is as good as, -95-200903154 has the prebaking temperature of 80 in the above (I) The substrate of the patterned film formed at °C was evaluated for heat discoloration resistance by heating in a 250 oven for 1 hour, 'change in transmittance of the patterned film before and after heating. The results are shown in Table 5. When the rate of change is less than 5%, 'it indicates that the heat discoloration resistance is good, and when it exceeds 5%, 'represents poor.' The transmittance is the same as the evaluation of (IV) transparency. (VI) The evaluation of the adhesion is as described above (I) The adhesion of the patterned film having a prebaking temperature of 80 ° C was evaluated by a checkerboard peel test after a pressure cooker test (120 ° C 'humidity 100%, 4 hours). The results are shown in Table 5 The evaluation results are expressed in the number of remaining checkerboards in 1 checkerboard grid. (V 11 ) Evaluation of preservation stability The above composition solution was heated in an oven at 40 ° C for 1 week. The viscosity change before and after heating was evaluated for preservation stability. The viscosity change rate at that time is shown in Table 4. When the rate of change is less than 5%, the storage stability is good, and when it exceeds 5%, the storage stability is poor. Evaluation of microlenses (I) Formation of microlenses using spin coating The cloth machine was coated on the 6-inch ruthenium substrate to apply the above composition solution (S-51) to form a film thickness of 2·5 μm, and was baked on a hot plate at -96-200903154 for 3 minutes to form a coating film. Then, using the predetermined pattern mask, the obtained coating film is irradiated with ultraviolet light having an intensity of 1 〇mw/cm 2 of 43 6 nm, and secondly, by an aqueous solution of tetramethylammonium hydroxide of 2 3 8 % by weight. After developing for 5 minutes at 5 t, it was washed with pure water for 1 minute to thereby remove unnecessary portions to form a pattern. The pattern formed as described above was irradiated with ultraviolet light at a wavelength of 436 nm of 10 μm/cm 2 . After / c m2, it was heated at 160 ° C for 1 〇 minutes, and then heated at 23 ° C for 10 minutes to melt the pattern to form a microlens. (II) Evaluation of sensitivity After melting of the above (I) 0.8 μιη line and space pattern of the microlens pattern (1 〇 Ο Ο 空间 空间 空间 空间 空间 空间 最低 最低The amount is shown in Table 6. When the 値 is 1 〇〇 m ] / c m2 or less, the resolution is good, and when the sensitivity exceeds 100 mJ/cm 2 , the resolution is poor. (III) The evaluation of transparency is the same as (I) above. A patterned film is formed on a glass substrate. The transmittance of the glass substrate of the microlens pattern after melting is measured at a transmittance of 4 〇〇 nm using a spectrophotometer (manufactured by Hitachi Co., Ltd., Model 150_20). Evaluation. The transmittance at 40 〇 nm at this time is shown in Table 6. When the transmittance is 90 to 1%, 'the transmission rate is good, and when it is less than 90%, the transmittance is poor. (IV) Evaluation of heat-resistant transparency - 97- 200903154 The glass substrate having the pattern-like film formed in the above (ΙΠ) was heated in an oven at 250 ° C for 1 hour, and the patterned film before and after heating The change in transmittance is evaluated as heat-resistant transparency. The rate of change in transmittance at this time is shown in Table 6. When the rate of change is less than 5%, it means that the heat-resistant transparency is good, and when it exceeds 5%, it means that it is defective. Further, the transmittance is the same as the evaluation of (III) transparency. (V) Evaluation of Adhesiveness The adhesion of the patterned film formed in the above (1) was evaluated by a checkerboard peeling test after a pressure cooker test (1 20 ° C, humidity 100% '4 hours). The results are shown in Table 6. The evaluation results are expressed in the number of remaining checkerboards in the 100 checkerboard grid. (VI) Evaluation of solvent resistance The glass substrate having the pattern-like film formed in the same manner as in the above (III) was immersed in isopropyl alcohol at a temperature of 50 ° C for 1 ’ minutes to evaluate the change in film thickness. The rate of change at this time is shown in Table 6. When the rate of change is 0 to 5 %, it means that the solvent resistance is good, and when it exceeds 5%, it means that the solvent resistance is poor. Example 52 A polymer solution containing the copolymer [A-6] obtained in Synthesis Example 6 (corresponding to 100 parts by weight of the copolymer [A-6] (solid portion) and 4, 4, - [ of the [b] component] l - (4-(1-[4-Hydroxyphenyl]-1-methylethyl)phenyl)ethylidene]bisphenol (1 mol) with hydrazine, 2·naphthoquinonediazide-5- Condensate of sulfonic acid chloride (2 mol) -98- 200903154 (4,4'-[l - (4-(l-[4-hydroxyphenyl]-1-methylethyl)phenyl)) 20 parts by weight of bisphenol-1,2-naphthoquinonediazide-5-sulfonate), condensation of tetrakis[(3-ethyloxacycloalkyl-3-yl)methyl]decanoic acid vinegar 2 parts by weight and γ-methyl propyl oxypropyl trimethoxy sand yard 5 parts by weight, and dissolved in propylene glycol monomethyl ether acetate 'to make the solid content concentration 31% by weight, with a pore diameter of 0.5 μ The microporous filter of m was filtered to prepare a solution (S - 5 2 ) of the radiation sensitive linear resin composition. The results are shown in Tables 4 to 6. Example 5 3 The copolymer obtained in Synthesis Example 7 [A-7] a polymer solution (corresponding to 100 parts by weight of the copolymer [A-7] (solids) and 4,4'-[l - (4-( 1-[4- a condensate of phenyl]-1-methylethyl)phenyl)ethylidene]bisphenol (1 mole) with 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2 mole) 4,4'-[l - (4-(1-[4-hydroxyphenyl]-1-methylethyl)phenyl)ethylidene]bisphenol-1,2-naphthoquinonediazide-5 -sulfonate) 1 part by weight of a condensate of 'tetrakis[(3-ethyloxacyclyl-3-yl)methyl]decanoate 2 parts by weight and γ-methacryloxypropyltrimethyl 5 parts by weight of oxydecane was mixed and dissolved in propylene glycol monomethyl ether acetate to make the solid content concentration 3 重量%, and then filtered by a microporous filter having a pore diameter of 5 μπι to prepare a radiation sensitive linear resin composition. The solution (S-S3). The results are shown in Tables 4 to 6. Example 5 4 A polymer solution containing the copolymer [α_8] obtained in Synthesis Example 8 (corresponding to 100 parts by weight of the copolymer [Α-8]) (solids) and [β] component -99- 200903154 of 4,4,-[l-(4-(l-[4-hydroxyphenyl]-1-methylethyl)phenyl]bisphenol ( 1 molar) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (condensation of 2 (4,4,-[l - (4-(1-[4-hydroxyphenyl]-1-) Methyl ethyl)thenyl] Condensation amount of bisphenol-1,2-naphthoquinonediazide-5-sulfonate) 30 parts of [(3-ethyloxyheterocyclo-3-yl)methyl]decanoate and γ- 5 parts by weight of methacryloxypropyltrimethoxydecane, dissolved in propylene glycol monomethyl ether acetate, and the solid content concentration is % by weight, and then filtered through a microporous filter having a pore diameter of 5 μm to prepare a linear resin. A solution of the composition (S-54). The results are as shown in Table 4 to Comparative Example 4, and a solution containing the copolymer [A-1 R] obtained in Comparative Synthesis Example 1 (corresponding to a copolymer [A-1 R] of 100 parts by weight (solid [Β] component) 4,4'-[l - (4-(1-[4-Phenyl]-indole-methylethyl)-ethylidene] bisphenol (1 mol) with 1,2-naphthoquinonediazide Condensate (4,4'-[l-(4-(l-[4-hydroxyphenyl)-phenyl)phenyl)-ethylidene]-indole-I,2 -naphthoquinonediazide acid extension g|) 3 parts and γ-methacryloxypropyltrimethoxydecane 5 mi parts, dissolved in propylene glycol monomethyl ether acetate, so that the solid part of the tenant

/V''V 量％後，以孔徑〇.5μπΐ之微孔過濾器過濟， 他、，製備敏 性樹脂組成物之溶液（S- 1 R )。結果如表4 衣4〜6所矛 比較例5 將含有比較合成例2所得之共聚物「Λ L A-2R〕之 )次乙 莫耳） )苯基 份、四 物2重 予以混 乞爲3 1 敏輻射 示。 聚合物 份）與 )苯基 隻氯（2 基乙基 0重量 以混合 31重 輻射線 聚合物 -100- 200903154 溶液（相當於共聚物〔A-2R〕100重量份（固形份）與 [B]成分之4,4’-[1-(4-(1-[4-羥苯基]-1-甲基乙基）苯基 )次乙基]雙酚（1莫耳）與1，2-萘醌二疊氮-5-磺酸氯（2 莫耳）之縮合物（4,4’-[1-(4-(1-[4-羥苯基]-1-甲基乙基 )苯基）次乙基]雙酚-1,2-萘醌二疊氮-5-磺酸酯）18重量 份及γ-甲基丙烯氧基丙基三甲氧基矽烷5重量份予以混合 ，溶解於丙二醇單甲醚乙酸酯，使固形份濃度成爲3 1重 量％後，以孔徑〇 . 5 μιη之微孔過濾器過濾，製備敏輻射線 性樹脂組成物之溶液（S-2R )。結果如表4〜6所示。 表4 解像度 保存安定性 (黏度變化率） 預烘烤溫度CC ) 80 90 100 實施例5 1 〇 〇 〇 1 % 實施例5 2 〇 〇 〇 1 % 實施例5 3 〇 〇 〇 1 % 實施例5 4 〇 〇 〇 1 % 比較例4 〇 〇 〇 9% 比較例5 〇 〇 〇 4% 表5 耐熱尺寸安定性 (膜厚變化率） 透明性 (透過率） 耐熱變色性 (透過率之變化率） 密著性 實施例51 3% 94% 2% 100 實施例52 3% 95% 2% 100 實施例53 3% 92% 2% 100 實施例54 2% 92% 3% 100 比較例4 4% 91% 5% 80 比較例5 6% 91% 6% 80 200903154 表6 感度 (mJ/cm2) 透明性 (透過率） 耐熱透明性 (變化率） 密著性 耐溶劑性 (膜厚變化率） 實施例51 60 94% 4% 100 2% 實施例52 60 95% 3% 100 3% 實施例53 50 92% 3% 100 2% 實施例54 75 92% 3% 100 3% 比較例4 100 86% 7% 80 7% 比較例5 110 86% 7% 80 7% 【圖式簡單說明】 圖1係微透鏡之剖面形狀之模式圖。 -102-After the amount of /V''V, the solution of the sensitive resin composition (S-1R) was prepared by using a microporous filter having a pore diameter of 55 μπ. The results are shown in Table 4, Comparative Examples 5 of the clothes 4 to 6 spears. The phenyl group containing the copolymer "Λ L A-2R" obtained in Comparative Synthesis Example 2) and the benzene portion of the four materials were mixed. 3 1 sensitive radiation. Polymer part) and phenyl chloride only (2 base ethyl 0 weight to mix 31 weight radiation polymer -100- 200903154 solution (corresponding to copolymer [A-2R] 100 parts by weight ( Solid,) 4,4'-[1-(4-(1-[4-hydroxyphenyl]-1-methylethyl)phenyl)ethylidene]bisphenol (B) Condensate of 4,4'-[1-(4-(1-[4-hydroxyphenyl]-1) with 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2 mol) -methylethyl)phenyl)ethylidene]bisphenol-1,2-naphthoquinonediazide-5-sulfonate) 18 parts by weight and γ-methylpropoxypropyltrimethoxydecane 5 The parts by weight are mixed, dissolved in propylene glycol monomethyl ether acetate, and the solid content concentration is 31% by weight, and then filtered through a microporous filter having a pore diameter of 5 μm to prepare a solution of the radiation sensitive linear resin composition (S -2R). The results are shown in Tables 4 to 6. Table 4 Resolution Preservation Stability (Viscosity Change Rate) Prebaking Temperature CC 80 90 100 Example 5 1 〇〇〇 1 % Example 5 2 〇〇〇 1 % Example 5 3 〇〇〇 1 % Example 5 4 〇〇〇 1 % Comparative Example 4 〇〇〇 9% Comparative Example 5 〇〇〇 4% Table 5 Heat Resistance Dimensional Stability (Thickness Change Rate) Transparency (Transmittance) Heat Discoloration (Change Rate of Transmittance) Adhesion Example 51 3% 94% 2% 100 Example 52 3% 95% 2% 100 Example 53 3% 92% 2% 100 Example 54 2% 92% 3% 100 Comparative Example 4 4% 91% 5% 80 Comparative Example 5 6% 91% 6% 80 200903154 Table 6 Sensitivity (mJ/cm2) Transparency (transmittance) Heat-resistant transparency (rate of change) Adhesive solvent resistance (film thickness change rate) Example 51 60 94% 4% 100 2% Example 52 60 95% 3% 100 3% Example 53 50 92% 3% 100 2% Example 54 75 92% 3% 100 3% Comparative Example 4 100 86% 7% 80 7% Comparative Example 5 110 86% 7% 80 7% [Picture Brief Description of the Drawings Figure 1 is a schematic view of the cross-sectional shape of a microlens.

Claims (1)

200903154 十、申請專利範圍 1 .一種敏輻射線性樹脂組成物，其特徵係含有： [A] ( al )不飽和羧酸及/或不飽和羧酸酐、 (a2)含有環氧基及/或氧環丁基之不飽和化合物， 及 (a3 )選自甲基丙烯酸烷酯、丙烯酸烷酯、甲基丙烯 酸環狀烷酯、具有羥基之甲基丙烯酸酯、丙烯酸環狀烷酯 、甲基丙烯酸芳酯、丙烯酸芳酯、不飽和二羧酸二酯、雙 環不飽和化合物、馬來醯亞胺化合物、不飽和芳香族化合 物、共軛一稀、具有四氫呋喃骨架、呋喃骨架、四氫吡喃 骨架、吡喃骨架或下述式（3)表示之骨架之不飽和化合 物及下述式（1 )袠示之含酚性羥基之不飽和化合物所成 群之與（al)成分及（a2)成分不同之至少1種之其他不 飽和化合物的共聚物’200903154 X. Patent application scope 1. A sensitive radiation linear resin composition characterized by: [A] (al) unsaturated carboxylic acid and/or unsaturated carboxylic anhydride, (a2) containing epoxy and/or oxygen a cyclobutyl unsaturated compound, and (a3) are selected from the group consisting of alkyl methacrylate, alkyl acrylate, cyclic alkyl methacrylate, methacrylate having a hydroxyl group, cyclic alkyl acrylate, methacrylic acid Ester, aryl acrylate, unsaturated dicarboxylic acid diester, bicyclic unsaturated compound, maleimide compound, unsaturated aromatic compound, conjugated dilute, tetrahydrofuran skeleton, furan skeleton, tetrahydropyran skeleton, The pyran skeleton or the unsaturated compound of the skeleton represented by the following formula (3) and the phenolic hydroxyl group-containing unsaturated compound represented by the following formula (1) are different from the (al) component and the (a2) component. a copolymer of at least one other unsaturated compound (式（3)中’ R7係氫原子或甲基，n係1以上的整(In the formula (3), R7 is a hydrogen atom or a methyl group, and n is a one or more. CH产CH production • · _ (I) -103- 200903154 其中R1係氫原子或碳數1〜4之烷基，R2〜R6係相同 或不同、氫原子、羥基或碳數1〜4之烷基，B係表示單 鍵、-COO-、或- CONH-，m係0〜3的整數，但是r2〜R6 之至少一個爲羥基， [B] l,2-醌二疊氮化合物及 [C] 含有與[A]成分藉由熱產生交聯反應之官能基的矽 氧烷低聚物。 2 .如申請專利範圍第1項之敏輻射線性樹脂組成物， 其中[C]成分之與[A]成分藉由熱產生交聯反應之官能基爲 環氧基、氧環丁基、環硫基、乙烯基、烯丙基、（甲基） 丙稀醯基、竣基、羥基、氫硫基、異氰酸酯基、胺基、脲 基或苯乙稀基。 3 .如申請專利範圍第1項之敏輻射線性樹脂組成物， 其中[C]成分爲下述式（1)及下述式（2)之各自表示之 烷氧基矽烷經共水解後之矽氧烷低聚物， si(R8)s(R9)t(〇R-)u ( η 式中’ R8係表示含有環氧基、氧環丁基、環硫基、乙 烯基烯丙基、（甲基）丙烯醯基、羧基、羥基、氫硫基 、異氰酸酯基、賊： 月女基、脲基或苯乙烯基的取代基，R9、• · _ (I) -103- 200903154 wherein R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R2 to R6 are the same or different, a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 4 carbon atoms, and B is represented by a single bond, -COO-, or -CONH-, m is an integer of 0 to 3, but at least one of r2 to R6 is a hydroxyl group, [B] 1,2-quinonediazide compound and [C] contain and [A A component of a siloxane oxide oligomer which generates a functional group of a crosslinking reaction by heat. 2. The sensitive radiation linear resin composition of claim 1, wherein the functional group of the [C] component and the [A] component by heat generation is an epoxy group, an oxocyclobutyl group, an epoxide group. Base, vinyl, allyl, (meth) acrylonitrile, fluorenyl, hydroxy, thiol, isocyanate, amine, ureido or styrene. 3. The sensitive radiation linear resin composition of claim 1, wherein the [C] component is co-hydrolyzed by alkoxydecane represented by the following formula (1) and the following formula (2); Oxyalkane oligomer, si(R8)s(R9)t(〇R-)u (wherein 'R8 represents an epoxy group, an oxocyclobutyl group, an alkylthio group, a vinyl allyl group, Methyl) propylene fluorenyl, carboxyl, hydroxy, thiol, isocyanate, thief: thiol, ureido or styryl substituent, R9, 但是 s+t+u=4 1 SHR1 )4 價有機基，s係1〜3的整數 式中 R11、R 12 Rl2係可相同或不同，各爲1價有機基，χ -104- 200903154 係0〜2的整數。 4 .如申請專利範圍第1項之敏輻射線性樹脂組成物， 其中（C)成分爲下述式（9)表示之矽氧烷低聚物， fi 〇 R21However, s+t+u=4 1 SHR1 )4 valence organic group, s series 1~3 integer formula, R11, R 12 Rl2 system may be the same or different, each is a monovalent organic group, χ -104- 200903154 is 0 An integer of ~2. 4. The sensitive radiation linear resin composition of claim 1, wherein the component (C) is a siloxane oligomer represented by the following formula (9), fi 〇 R21 Ο——Si——Ο—R23 I o I」m R24 式中R21〜R24係相互獨立表示氫原子、烷基、環烷基 、或下述式（10)表示之氧環丁基，m係1〜10之整數， 但是R21〜R24之至少1個係下述式（10 )表示之氧環丁基 (25 r13 •(CH2)i—C—C—RII0——C—R R16 14 (10) 15 式中1125、1113、1114、1115及1116係相互獨立表示氫原 子、氟原子、碳數1〜4之烷基、苯基或碳數1〜4之全氟 烷基，1係1〜6之整數。 5 .如申請專利範圍第1項之敏輻射線性樹脂組成物， -105- 200903154 其係形成層間絶緣膜用。 6 . —種層間絶緣膜之形成方法，其特徵係含有以下記 載順序之以下步驟， (1 )基板上形成申請專利範圍第1項之敏輻射線性 樹脂組成物之塗膜的步驟、 (2 )對該塗膜之至少一部份照射輻射線的步驟、 (3 )顯影步驟及 (4 )加熱步驟。 7. —種層間絶緣膜’其特徵係藉由申請專利範圍第6 項之方法所形成。 8 .如申請專利範圍第1項之敏輻射線性樹脂組成物， 其係形成微透鏡用。 9 · 一種微透鏡之形成方法，其特徵係含有以下記載順 序之以下步驟， (1 )基板上形成申請專利範圍第1項之敏輻射線性 樹脂組成物之塗膜的步驟、 (2 )對該塗膜之至少一部份照射輻射線的步驟、 (3 )顯影步驟及 (4 )加熱步驟。 1 0 · —種微透鏡’其特徵係藉由申請專利範圍第9項 之方法所形成。 -106-Ο——Si—Ο—R23 I o I”m R24 wherein R21 to R24 are each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, or an oxocyclobutyl group represented by the following formula (10), m system An integer of 1 to 10, but at least one of R21 to R24 is an oxocyclobutyl group represented by the following formula (10) (25 r13 •(CH 2 ) i—C—C—RII0—C—R R16 14 (10 Wherein 1125, 1113, 1114, 1115 and 1116 are each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 4 carbon atoms, a phenyl group or a perfluoroalkyl group having 1 to 4 carbon atoms, 1 series 1~ An integer of 6. 5. The sensitive radiation linear resin composition of the first application of the patent scope, -105-200903154 is used for forming an interlayer insulating film. 6. A method for forming an interlayer insulating film, the characteristics of which include the following description The following steps of the sequence, (1) a step of forming a coating film of the sensitive radiation linear resin composition of claim 1 on the substrate, (2) a step of irradiating at least a portion of the coating film with radiation, (3) a developing step and (4) a heating step. 7. - an interlayer insulating film 'characteristically formed by the method of claim 6 8. The sensitive radiation linear resin composition of claim 1 which is used for forming a microlens. 9. A method of forming a microlens, comprising the following steps of the following sequence, (1) forming on a substrate The step of applying a coating film of the sensitive radiation linear resin composition of the first aspect of the patent, (2) the step of irradiating at least a portion of the coating film with radiation, (3) the developing step, and (4) the heating step. 0 · - A type of microlens' is characterized by the method of claim 9 of the patent scope. -106-
TW097101656A 2007-01-18 2008-01-16 Sensitive radiation linear resin composition, interlayer insulating film and microlens, and the like TWI425315B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007009145A JP4849251B2 (en) 2007-01-18 2007-01-18 Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof
JP2007051833A JP4766268B2 (en) 2007-03-01 2007-03-01 Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof

Publications (2)

Publication Number Publication Date
TW200903154A true TW200903154A (en) 2009-01-16
TWI425315B TWI425315B (en) 2014-02-01

Family

ID=39822329

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097101656A TWI425315B (en) 2007-01-18 2008-01-16 Sensitive radiation linear resin composition, interlayer insulating film and microlens, and the like

Country Status (2)

Country Link
KR (1) KR101432300B1 (en)
TW (1) TWI425315B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343664B2 (en) * 2009-03-30 2013-11-13 Ｊｓｒ株式会社 Radiation-sensitive resin composition, organic EL display element partition and insulating film, and method for forming the same
KR102793276B1 (en) * 2018-12-31 2025-04-09 주식회사 동진쎄미켐 Positive photosensitive resin composition
KR102835122B1 (en) * 2019-06-28 2025-07-17 듀폰스페셜티머터리얼스코리아 유한회사 Positive-type photosensitive resin composition and cured film prepared therefrom
KR20210001705A (en) * 2019-06-28 2021-01-06 롬엔드하스전자재료코리아유한회사 Positive-type photosensitive resin composition and cured film prepared therefrom
CN111403248B (en) * 2020-04-29 2021-12-17 漳州市台联电力科技有限公司 Fuse protector
CN114545739B (en) * 2022-01-18 2025-07-22 深圳迪道微电子科技有限公司 High-sensitivity positive photoresist composition, synthesis method thereof and cured film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3835120B2 (en) 2000-05-22 2006-10-18 Ｊｓｒ株式会社 Radiation sensitive resin composition, interlayer insulating film and microlens
TW200622486A (en) * 2004-10-14 2006-07-01 Sumitomo Chemical Co Radiation sensitive resin composition
JP4586703B2 (en) 2004-10-14 2010-11-24 住友化学株式会社 Radiation sensitive resin composition

Also Published As

Publication number Publication date
KR20080068566A (en) 2008-07-23
TWI425315B (en) 2014-02-01
KR101432300B1 (en) 2014-08-20

Similar Documents

Publication Publication Date Title
JP4849251B2 (en) Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof
TWI444775B (en) Sensitive radiation linear resin composition, interlayer insulating film and microlens, and the like
TWI430025B (en) Photosensitive resin composition, interlayer insulating film, and method for processing microlens
TWI437365B (en) Sensitive radiation linear resin composition, interlayer insulating film and microlens, and the like
TWI438573B (en) Radiation-sensitive composition, interlayer insulation film and micro-lens, and forming method thereof
TW200428021A (en) Radiation-sensitive resin composition, interlayer insulating film, micro-lens and method for forming the same
KR100776121B1 (en) Radiation Sensitive Resin Composition, Inter Layer Insulating Film and Microlens and Process for Preparing the Same
TWI405038B (en) A radiation-sensitive resin composition, an interlayer insulating film and a microlens, and a method for manufacturing the same
TW200903154A (en) Radiation sensitive resin composition, laminated insulating film, micro lens and preparation method thereof
TWI451194B (en) Radiosensitive resin composition, interlayer insulation film, microlens and methods for manufacturing them
TWI510857B (en) Sensitive radiation linear resin composition, and interlayer insulating film and microlens and the like
TW201529668A (en) Method for manufacturing cured film of display element, radiation-sensitive resin composition and application thereof, and heating apparatus
CN101206401A (en) Radiation-sensitive resin composition, interlayer insulating film, and microlens, and methods for forming them
TW200947132A (en) Positive radiation-sensitive resin composition, microlens, and method for forming microlens
TWI326799B (en)
TWI361951B (en)
KR100806495B1 (en) Radiation Sensitive Resin Composition, Inter Layer Insulating Film and Microlens and Process for Preparing the Same
TWI285791B (en) Radiation-sensitive resin composition, interlayer insulating film and microlens
TWI394000B (en) Radiation sensitive resin composition, radiation sensitive dry film, interlayer dielectric film and a forming method thereof, and microlens and a forming method thereof