TW200908200A - Wafer supporting glass - Google Patents

Abstract

To provide a wafer supporting glass consisting of a glass plate (GP) exhibiting flexibility so that it can support a semiconductor wafer (SW) by bonding thereto and can be stripped therefrom.The glass plate (GP) is a wafer supporting glass for supporting a semiconductor wafer (SW) by bonding thereto. In order to strip the wafer supporting glass bonded to the semiconductor wafer (SW), the wafer supporting glass bends by a predetermined angle or more. When the wafer supporting glass bends 30 degrees or more, it can be stripped without applying a large force to the semiconductor wafer.

Description

200908200 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor wafer that is adhered and supported while easily supporting a glass plate from a wafer on a semiconductor wafer. In addition, the wafer peripheral glass substrate having a financial impact resistance such as a defect or a crack due to a force applied to the peripheral portion is provided. [Prior Art]

In recent years, with the increase in the functionality of electronic devices such as mobile phones and cards, the internal semiconductor components (10), ICs, etc., have been thinned or reduced. Further, in order to increase the memory capacity without narrowing the line width, there are a three-dimensional mounted semiconductor element in which a plurality of semiconductor wafers are stacked, for example, an SD 5 card, and the like, and there is an increasing tendency. In the case of thinning, the semiconductor device of the three-dimensional mounted semiconductor device is laminated with a plurality of semiconductor circuits of 111 to 2,000 Å, and the semiconductor element having a thickness of less than or equal to the thickness of the body is continuously opened. progress. One of the techniques for thinning a semiconductor circuit is a back grinding/moon surface grinding process for polishing the back surface of a semiconductor wafer which is formed by a process, and a double-sided adhesive tape. The semiconductor wafer is patterned and formed on the back surface of the semiconductor wafer by the patterning (four) surface of the wafer base, which is adhered to the glass base of the rigid wafer branch. Here, in the case of the 0 grinding process, (4) the wafer supporting the glass substrate is a glass plate which is ground with precision. The semiconductor wafer processed by the backside is separated from the wafer on the glass substrate and transferred to the wafer cutting step 97121371 200908200. A wafer peeling apparatus for separating the semiconductor wafer from the wafer supporting glass substrate is described in Patent Document 1 or Patent Document 2. In the wafer peeling apparatus, 'the object to be processed by adhering and fixing the semiconductor wafer and the wafer supporting glass substrate via the double-side adhesive tape is subjected to ultraviolet irradiation, and then the bonded semiconductor wafer and the wafer supporting glass are bonded. The peripheral portion of the substrate is subjected to a physical force in the direction of pulling away from each other to perform peeling. Further, since the semiconductor wafer having a thickness of aO/zm or less is bent due to its own weight, it is necessary to support the semiconductor wafer by the wafer supporting glass substrate from the p-back grinding process to the dicing step. Furthermore, the wafer-supporting glass substrate is repeatedly used in the cleaning step. In the cleaning step, it is also necessary to remove the solid residue of the adhesive d or the adhesive used to support the semiconductor wafer. Therefore, the showering force which is also strongly washed exerts a large impact on the peripheral portion of the wafer supporting glass substrate. The damage or cracking occurred in the peripheral portion due to the impact, and the wafer supporting glass substrate could not be reused. (Patent Document 1) Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. However, in the wafer peeling and arranging disclosed in Patent Document 1 or Patent Document 2, since the semiconductor wafer is deformed and separated in a state in which the wafer supporting glass substrate is fixed on a flat surface, Excessive stress is applied to each of the semiconductor circuits formed on the semiconductor wafer, and as a result, the performance of the semiconductor device having the most αα is lowered. Further, in the steps disclosed in Patent Document 97121371 6 200908200 1 or Patent Document 2, when the wafer supporting glass substrate is housed in the storage machine table or the wafer supporting glass substrate is positioned, the wall surface or positioning of the storage machine table The pin contacts or collides with the peripheral edge portion of the wafer supporting glass substrate. Therefore, there is a possibility that defects or cracks may occur in the peripheral portion of the wafer supporting glass substrate. The glass particles or dust generated by such defect cracks may scatter and adhere to the pattern on the surface of the wafer, and defects and cracks may occur, and the semiconductor wafer is mechanically damaged near the periphery of the η. Problems such as defective semiconductor elements that cause pattern defects. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and provides a wafer supporting a glass substrate which is adhered and supported by a semiconductor wafer while being peeled off from the semiconductor wafer and formed of a flexible glass plate. Further, a wafer supporting glass substrate having a peripheral portion having an impact resistance which is not damaged or cracked by an impact force applied to the peripheral portion is provided. (the means to solve the problem) ί; In the present invention, the crystal supporting glass substrate is bent and peeled off while the semiconductor wafer is fixed on a flat surface. Conventionally, since the wafer-supporting glass substrate used for the back-grinding of the semiconductor wafer is adhered to the semiconductor wafer as a brittle material, it is not possible to think that the wafer-supporting glass substrate is bent and peeled off. The wafer supporting glass substrate of the first aspect is adhered to the semiconductor wafer, and the wafer supported by the t semiconductor wafer supports the glass substrate. Further, in order to support the glass substrate adhered to the semiconductor wafer, the glass substrate is peeled off from the semiconductor wafer, and the wafer supporting glass substrate is bent at a predetermined angle or more. 97121371 7 200908200 Because the wafer supporting glass substrate is a brittle material, it is impossible to consider the bending of the wafer supporting glass substrate from the semiconductor wafer when the wafer supporting glass substrate adhered on the semiconductor wafer is separated. Peel off. In the first aspect, by providing a crystal circular support glass substrate which is bendable at a predetermined angle or more, the wafer-supporting glass substrate can be peeled off without bending and fixing the semiconductor wafer. In the second aspect, the maximum bending angle of the predetermined angle is 3 degrees. The wafer supporting glass substrate according to the second aspect is such that the semiconductor circuit formed on the semiconductor round is not damaged, and the degree of curvature is higher. On the other hand, even if the wafer supporting glass substrate is kept horizontal, it is not bent by its own weight. Further, since the maximum bending angle is larger, it is easy to bend and peel with a smaller force, and thus there is no upper limit of the maximum bending angle. The wafer supporting glass substrate according to the third aspect is adhered to a semiconductor wafer having a predetermined diameter and supporting the semiconductor wafer and having a diameter larger than a predetermined diameter of the wafer supporting glass substrate; and the wafer supporting the glass substrate Ρ has impact resistance at least in the peripheral portion. According to the third aspect, the wafer supporting the glass substrate can withstand the impact of the semiconductor wafer because the straight diameter is larger than the diameter of the semiconductor wafer. Further, even if the impact is received, the peripheral portion of the wafer supporting glass substrate has impact resistance, so that glass particles or dust do not occur due to defects, cracks, or the like, and the semiconductor wafer is not affected. In addition, the support of the glass substrate from the f-circle is actually the financial formula, and the wafer-supporting glass substrate that improves the impact resistance of the peripheral portion is still in the target of the impact resistance of the peripheral portion. The circular support glass substrate will increase the impact resistance of the perimeter of 97121371 200908200. According to the viewpoint of the fourth aspect, the wafer supporting glass substrate has a compressive stress layer which is chemically strengthened. • In the fourth aspect, a compressive stress layer is formed by chemical strengthening treatment. If the wafer-supporting glass substrate is bent, tensile stress is applied to the outer surface, but since the compressive stress layer is formed on the surface of the wafer supporting glass substrate, the wafer supporting the glass substrate is prevented from being cracked by tensile stress. situation. In addition, the chemical strengthening treatment can increase the impact resistance of the peripheral portion by about 7 times or more. According to a fifth aspect of the invention, in the wafer-supporting glass substrate, in the fourth aspect, the wafer glass substrate contains Na2〇 or LhO. 3 The wafer-supporting glass substrate with NaW is an essential component for chemical strengthening by ion exchange, and a thicker compressive stress layer can be easily obtained by a wafer-supporting glass substrate containing Li2〇. The wafer supporting glass substrate according to the sixth aspect has a coating layer which is subjected to coating treatment. In the sixth aspect, a compressive stress layer is formed by providing a coating layer on a wafer supporting glass substrate. The chemical strengthening treatment forms a compressive stress layer on the inner side of the glass, and the coating treatment forms a compressive stress layer on the outer side of the glass. The compressive stress layer depth of the wafer supporting glass substrate according to the seventh aspect is 15 or more and 220 / zm or less. In order to provide impact resistance to the wafer supporting glass substrate, the depth of the compressive stress layer of the wafer supporting glass substrate must be 丨5 # m. In addition, the depth of the compressive stress layer of the wafer supporting glass substrate is as deep as possible. In addition, if the compressive stress of 97121371 9 200908200 is below 15 /zm, the wafer supporting glass substrate cannot be bent above a predetermined angle. Otherwise, if it is 220, it is easy to occur due to the wafer glass substrate itself. Curved, rippled ups and downs. The wafer-supporting glass substrate according to the eighth aspect has an i-th surface, a second surface, and a peripheral portion, and the peripheral portion has a truncated angle 33 or a curved surface that connects the first surface and the second surface. If the (4) treatment or the curved surface treatment is not performed, there is a possibility that the wafer glass substrate of the wafer is damaged when the chemical strengthening treatment is performed. Further, when the peripheral portion is not subjected to the truncation, when the wafer supports the glass substrate or the like, the peripheral edge == is damaged. This damage propagates greatly when the wafer is supported by the glass base (four) = 4 marks, so that the peripheral portion is subjected to a truncated portion or a curved surface. When the outer H edge portion is not formed (4) or "When the wafer supporting glass: = (4), etc., the peripheral portion is easily damaged, and if the damage is added, the impact is greatly propagated. ^ The peripheral portion is formed into a truncated portion or a curved surface. 'It is possible to reduce the occurrence of damage. The arithmetic mean coarseness k of the peripheral portion of the wafer supporting glass substrate of the 〇9 viewpoint is 440 nm or less. The arithmetic mean thick chain degree Ra is larger than ". (10), the largest damage or the like is reduced in the peripheral portion. If there is such a loss, the wafer supporting glass substrate is bent, and the material is subjected to a machining or polishing process according to an arithmetic mean roughness of 0 nm or less. In addition, if the arithmetic average is rough: Ding, when the impact is increased, the occurrence of defects and cracks will be reduced. In the 10 砚 point, the semiconductor wafer has a circular shape that is predetermined to be pinched, and the crystal 121121371 200908200 circular support glass substrate has a circular shape having a diameter larger than a predetermined diameter. If the wafer supporting glass substrate has a circular shape having a diameter larger than a predetermined diameter of the semiconductor wafer, the semiconductor wafer is transported, etc., regardless of the semiconductor, before the semiconductor wafer collides with the wafer. The glass substrate will be touched first. Therefore, even if the semiconductor wafer supports the glass substrate to be broken, the semiconductor wafer is not damaged. (Effect of the invention), . The wafer supporting glass substrate of the present invention adheres and supports the semiconductor crystal with the flexibility of being peeled off from the semiconductor wafer. Further, there are few cases where defects or cracks occur due to the impact force applied to the peripheral portion. This can reduce the possibility of defective semiconductor wafers due to glass powder or glass flakes caused by defects or cracks. [Embodiment] = Below The present embodiment will be described with reference to the drawings, in the following drawings.

U The proportion of the components of the field is reduced to help reduce the proportion. (10) It is understood that it is different from the actual &lt;adhesion and peeling of the glass plate&gt;. It is on the semiconductor wafer on which the semiconductor circuit is formed, and each step is as follows: Fig. 2. The (8)) and i Ge-transformed semiconductor crystals of the illustrated flow chart are applicable to crystallized wafers such as Ge or gallium arsenide (GaAs). In the vacuum processing chamber, the double-sided adhesive surface is adhered to the semiconductor crystal, and the first surface of the glass plate GP is adhered to the other side of the double-sided adhesive thin film. If the diameter of the semiconductor wafer SW is 200 mm, the diameter of the glass plate GP is 201_ slightly larger than the glass plate GP. Fig. 2A(a) shows a state in which the semiconductor wafer sw and the glass plate GP are adhered and fixed. Since the adhesion treatment is performed in the vacuum processing chamber, air is not entered between the double-sided adhesive film AD and the semiconductor wafer 3# or the glass plate GP. The details are disclosed in WO 2002/056352. Further, the double-sided adhesive film AD is formed on one side of the base sheet, and has a three-layer structure in which the adhesive is removed by ultraviolet irradiation to reduce the adhesiveness, and the other side has a weak adhesive adhesive. It is also possible to replace the double-sided adhesive film A D ' with a liquid resin coating. Next, in step S12, the glass plate GP is turned downward, and the back surface of the semiconductor wafer sw is ground by a grinding device (diamond polishing disk) 31 to a predetermined thickness as shown in Fig. 2A(b). The initial semi-conductive back surface position is indicated by a broken line, and indicates that the grinding is started from this state == If the semiconductor wafer K sw ' for the IC card is generally ground to break (1), then, if it is a three-dimensional mounting semiconductor wafer sw, Generally ground to 50&quot; before and after. A semiconductor wafer that is thinned by backside grinding requires a high-precision uniform thickness distribution. In view of this, the thickness of the semiconductor wafer sw can be subjected to high-precision grinding because the glass plate GP body can be ground by grinding or polishing as compared with the plastic wafer supporting member. 2B(C) is a cross-sectional view of the polished semiconductor wafer. In step S13t, in order to easily peel the glass plate GP from the double-sided adhesive film (10), the double-s, 7-faced adhesive film AD is irradiated through the glass plate GP. Then' in the first of the glass plate GP? ', &quot; Blades 2 on the surface of the sticky glass with peeling rubber 97121371 12 200908200 with DT. The release tape for flexible glass is a protective film for peeling off the plate GP. Figure 2β (Metal glass stripping tape DT of the glass GPs. ..., the viscous glass step is called, the semiconductor wafer sw is mounted on the vacuum 35 of the flat plate, by vacuuming, the semi-conducting cow ¥ The body circle SW is fixed to the vacuum chuck. /, the empty suction cup is attached with a peeling f for peeling off the glass plate GP=illustration) The semiconductor wafer SW is mounted in a straight state as shown in Fig. 2B(e) Cutaway view. It can also replace the vacuum suction electrostatic chuck. ~ κ / ti In step S15, the peeling tape is pulled up from the one end by pulling the glass release tape DT from one end to pull up one end of the glass plate GP. After being irradiated by ultraviolet rays, the adhesive force of the adhesive film AD is lowered to form an easily peelable state, and (10) the glass plate GP is peeled off by the small force, and the pull-up is pulled up from the _ end. Stripping the glass plate GP with less force means that the smaller force acts only on the semiconductor = wafer SW, causing almost no physical deformation of the semiconductor circuit formed on the surface of the semiconductor wafer sw. (1) is a state diagram in the middle of peeling off from the end of the glass plate Gp. It is known in most experiments that 'the glass plate GP is peeled off from the semiconductor wafer sw'. If it is the maximum bending angle of the glass plate GP (maximum bending point) The angle between the tangent and the horizontal plane is up to 30. Above the glass, the glass plate GP can be peeled off with less force. When the maximum angle of the bend is less than 3 (), the glass plate Gp may not be peeled off, or the semiconductor wafer sw The semiconductor circuit is subjected to damage such as breakage. In step S16t, the double-sided adhesive film core is peeled off from the surface of the semiconductor wafer 97121371 13 200908200. The state in which the double-sided adhesive film AD is peeled off from the semiconductor SW is shown in Fig. 2C(g). In step S17, the vacuum suction of the vacuum chuck 35 is opened, and the semiconductor crystal gj sw is removed from the vacuum chuck 35. Then, the semiconductor wafer is transferred to the cutting step, etc. <Embodiment 1: Chemicals The glass plate GP is a semiconductor crystal having a double-sided adhesive film AD by applying a bending of 3 〇〇 or more as described above, without causing damage to the semiconductor circuit of the semiconductor wafer SW. Round the glass plate (JP peeling off. That is, it is necessary to prepare a glass plate GP that does not crack even if it is up to 30. Then, because the semiconductor wafer is replaced by the storage machine wall or the positioning pin, On the other hand, the peripheral portion of the glass plate GP is in contact with or collided, so that the peripheral portion must have impact resistance. &lt;&lt;Glass substrate&gt;&gt; The glass substrate is prepared in three types.丨, broken glass

No. 2 glass No. 3, the respective composition is shown in Table 1. The raw materials used are, for example, oxides, carbonates, nitrates and hydroxides [Table 1] Weight % Si〇2 A 1 2〇3 L i 2〇Νβ2〇ΚζΟ MgO CaO Glass No. 1 63 Ding 10 3 2 Glass No. 2 * 63 14 6 10 Glass No. 3 ----- 71 1. 5 13. 5 1 4 9 After the glass is melted and gradually cooled, the raw materials are weighed according to the composition of the above glass. Then, the obtained raw material mixture is about 3.6 kg charged into 1.5 liters of white meter 100 ---- 100 100 97121371 14 200908200 The gold is collapsed and heated at 1500~l60 (rC for 5-8 hours) Forming a glass refining liquid, performing defoaming and homogenization by scrambling. Then, the glass solution is discharged onto the heated iron plate. Using the same heated iron plate, '= the molten glass flowing out The press-bonding is performed quickly. By pressing, a glass substrate having an outer diameter of about 210 mm and a thickness of about 3 mm can be obtained. The U2 crucible contained in the glass No. 1 and the glass No. 2 is obtained in the glass. In the surface layer portion, the glass is chemically strengthened by the main exchange in the ion exchange treatment bath. If it is less than two = the ion exchange performance is lowered, if it exceeds 1%%, the loss-resistant transparency and chemical durability are both The deterioration occurs. Therefore, the ratio of Lho is limited to 4 to 1%, preferably 4 to 7%. In addition, as shown in the step of Fig. i, since the double-sided adhesive film AD must be irradiated with ultraviolet rays, The glass plate (3) must have UV penetration.

The Naz lanthanum belongs to the surface layer of the glass, and is required to chemically strengthen the glass by ion exchange mainly with K ions in the ion exchange treatment bath. If it is less than 6%, the loss-resistant transparency is deteriorated, and the chemical strengthening layer becomes shallow, and the viscosity at the time of melting increases, so that the meltability is lowered. If it exceeds 15%, the chemical durability is deteriorated and the Knoop hardness is also small. Therefore, the ratio of NaW is limited to 6 to 14%. It is preferably 9 to 14%. Since the LizO-containing glass substrate can easily obtain a thicker compressive stress layer, the chemical strengthening treatment time can also be completed in a short time. In addition, since it has a thick compressive stress layer, it can enter the grinding step even after chemical strengthening treatment, and the damage resistance is also strong. On the other hand, the glass substrate material of the glass No. 3 which does not contain Li2〇 is relatively inexpensive. However, in order to obtain 97121371 15 200908200, it is necessary to transmit an appropriate amount of compressive stress layer, which is longer than the chemical tempering treatment time. &lt;&lt;The peripheral portion (end surface) of the glass plate GP&gt;&gt; The plate glass plate_stereoscopic drawings (8) and (C) are the glass plate (the enlarged outer peripheral portion of the τ 。. And the thickness is about _. The glass substrate is processed to obtain a glass-shaped processed product having an outer diameter L of 2〇1_ and a thick yield of 55_:goumm. The force is first two degrees of 2 () 4 mm The shape is added. Then, the grinding process of the peripheral portion PE of the glass is performed, and the processing of the upper and lower anodes and the GP 2 is performed. Further, the grinding process of the upper and lower parts 0ρι and 〇1) 2 is included. The polishing process of the peripheral portion PE is carried out as needed. As shown in (7) and (6), if the peripheral portion is subjected to the cut-off treatment or the curved surface treatment, the cut glass processing or the curved surface treatment is not performed, and when the above-described pre-reinforcing treatment is performed, the glass sheet Gp may be damaged. In addition, if the peripheral portion is not cut, the glass plate Gp is easily damaged during the transportation. This damage is caused by the rupture of the glass plate (3) every time and becomes a crack and propagates largely, so that the peripheral portion preferably forms a truncated angle or a curved surface cc. &lt;&lt;Process for Glass Substrate&gt;&gt; 2 Glass strengthening by ion exchange method is performed by exchanging glass ions with other ions of a molten salt at a high temperature, and in glass 2* 1 A method of forming a compressive stress layer. In the present embodiment, the glass plate is hereinafter described, and 11 kinds of glass plates GP are obtained by performing different treatments on the three kinds of glass substrates, 97121371 16 200908200. [Glass plate GP of Example 1] The glass plate GP of Example 1 firstly gradually cooled the glass substrate of the glass No. 1, and then subjected the outer shape processing, the end surface grinding processing, the upper and lower grinding processing, and the end surface grinding processing. And a glass-shaped workpiece having an outer diameter of 201 mm and a plate thickness of 0.5 mm was produced by grinding. Then, the glass-shaped processed product was dipped for 3 hours in a KN〇3 (potassium nitrate):NaN〇3 (nitric acid, sodium &gt; 60% ·* 40% mixed salt treatment bath) maintained at t: The surface portion of the shaped workpiece is ion-exchanged with Li ions and ions, and Na ions and K ions in the treatment bath, respectively, to complete the glass plate Gp of Example 1 in which the surface of the glass-shaped workpiece is chemically strengthened. Example 2 Glass Plate GP] As in Example 1, the glass plate Gp of Example 2 was obtained by gradually cooling the glass substrate of the glass crucible, and then performing the outer shape processing, the end surface grinding processing, the upper and lower grinding processing, and the end surface polishing. The processing and the upper and lower grinding processes are carried out to form a glass-shaped workpiece having an outer diameter of 201 mm and a plate thickness of 55 mm. Then, the glass-shaped processed product is kept at 38 (rc 3: age = 6) The treatment was immersed in cold for 42 hours. That is, the ion immersion was performed as much as possible in the extended immersion time as compared with the example ,, and the glass of Example 2 was completed [the glass plate gp of Example 3] The glass plate of 3 is used to carry out the shape processing of the glass substrate of the glass. Surface grinding, upper and lower grinding, and grinding 1 and jade, and upper and lower grinding to form outer diameter 201_, plate 97121371 17 200908200. Glass-shaped processed material, that is, glass plate GP of glass example 1 of Example 3. The thickness of the Omni glass-shaped processed material is the same as that of the embodiment. The plate GP system is different from the real one [the glass plate GP of the embodiment 4]. 4 glass plate GP system firstly glass Ν〇 的 glass substrate gradually and then shape processing, end grinding processing (10) &quot; tiger fine grinding), upper:: grinding processing, and upper and lower grinding processing, forming an outer diameter 201_, The glass-shaped processed material of the plate = degree 55. The glass-shaped processed material of the f-sub-exchange system is the same as that of the first embodiment. The glass plate GP of the treatment example 4 is different from the embodiment i in terms of the end surface treatment of the peripheral portion. Glass plate (9). L glass plate gp of example 5]

/ Glass plate Gp of Example 5 After the glass substrate of the glass N〇.丨 is gradually cooled, the target shape processing, the end surface grinding process (6 (10) fine grinding), the upper and lower grinding processes, and the upper and lower grinding processes are performed. It is produced by forming a glass-shaped processed product having an outer diameter of 2〇1_ and a plate thickness of 0 mm. The ion exchange system of the glass-shaped processed product was treated in the same manner as in Example 。. That is, the glass sheet GP of the fifth embodiment is treated differently from the glass sheet Gp of the third embodiment in terms of the end surface of the peripheral portion. [Glass plate gp of Example 6] The glass plate GP of the known example 6 is obtained by gradually cooling the glass substrate of the glass ν〇·2, and then performing the outer shape processing and the end surface grinding process (6 精 fine grinding) The upper and lower grinding processes and the upper and lower grinding processes are carried out to form a glass-shaped workpiece having an outer diameter of 20 lmm and a plate thickness of 5 5 mm. Then, the glass-shaped workpiece was held in a KN 〇 3 : NaN 〇 3 = 60%: 40% mixed salt bath at 38 ° C for 3 hours. Therefore, the surface of the glass-shaped processed object is chemically strengthened by ion exchange between the surface of the glass-shaped processed object and the Na ions and the Na ions and the κ ions in the treatment bath. Example 6 glass ϊ Xiaoban G Ρ. [Glass plate gp of Example 7] / Glass plate Gp of the case of a glass case. After the glass substrate of the glass crucible 2 was gradually cooled, the outer shape processing and the end surface grinding process (6 精 fine grinding) were performed. The upper and lower grinding processes and the upper and lower grinding processes are carried out to form a glass-shaped processed product having an outer diameter tearing plate and a plate thickness. Then, add the glass shape, = 〇〇3 in the 360 c: NaN〇3 = 6G%: 4G% mixed salt treatment bath Sigh / Bay 3 small days ^. Compared with the glass-shaped processed product of Example 6, the glass-shaped processed material of Example 7 has a lower temperature in the treatment bath, and the ion exchange reaction is lower than k °, thereby completing the glass plate of the solid_7 with less ion exchange. [Glass plate of Example 8] / Glass plate GP of the yoke example 8 is obtained by gradually cooling the glass substrate of the glass No. 2, and then knowing the shape processing, the end face grinding and the honing grinding) n :: cutting, And the upper and lower grinding processes are performed to form a glass-shaped processed product having an outer diameter of 201 mm and a plate thickness of m. Then, add the shape of the glass to :: in the 4, C, the full-featured salt-mixing bath / / / 15 small days. Compared with the glass-shaped processed product of Example 6, the temperature in the glass-processed processing bath was higher, and the reaction of the ion exchange was more. Therefore, the glass plate gp of Example 8 which is more ion exchanged is completed. [Glass plate gp of Example 9] 97121371 200908200 ^ The glass plate (3) of Example 9 is first made of a glass substrate of glass N〇. 3, "re-yoke shape processing, end face grinding (600 fine grinding) The upper surface is ground and reinforced, and the upper and lower grinding processes are performed to form a glass-shaped workpiece having an outer diameter such as a plate-thickness 〇.5_. Then, the glass shape is maintained at 43 (rc) Jump = 100% in the treatment bath for 20 hours. In this case, the Na ions on the surface of the glass-shaped processed object are ion-exchanged separately with the K ions in the treatment bath to complete the chemical strengthening of the surface of the glass-shaped processed object. The glass plate Gp of Example 9. [Glass plate GP of Example 10] The glass plate GP of Example 10 was obtained by first gradually cooling the glass substrate of glass N〇. 3, and then performing profile processing and end face grinding. (6 精 fine grinding), upper and lower grinding processing, and upper and lower grinding processing, forming a glass-shaped workpiece having an outer diameter and a plate thickness of 0.5 mm. Then, the glass-shaped workpiece is maintained at 430 c. KN〇3= 1 〇〇% treatment bath for 15 hours. That is, phase In Example 9, the glass plate GP of Example 1 was shortened and the U-father was replaced. [Glass plate GP of Example 11] The glass plate GP of Example 11 firstly glass N〇3 The glass shape of the outer diameter of 2 〇丨匪, the thickness of the plate is 0. 5mm, and the thickness of the glass is 0. 5mm. The glass shape of the outer diameter is 2 〇丨匪, the thickness of the plate is 0. 5mm. The product was obtained by the same procedure as in Example 9. The glass plate Gp of Example 11 was subjected to a grinding process or an end face grinding process (6 精 fine grinding). The glass plate GP of Example 9 was used. 97121371 20 200908200 In addition, the following comparative examples are compared with Example 丨 to Example u, and the comparative example exemplifies eight examples. [Comparative Example 1 Glass Plate GP] - In the glass plate GP of Comparative Example 1, the glass substrate of the glass No" is gradually cooled, and then the outer shape processing, the end surface grinding processing, the upper and lower grinding processing, the end surface polishing processing, and the upper and lower grinding processing are performed to form the outer diameter. 2〇1 coffee, glass with a thickness of 0.5mm The glass-shaped processed product was produced. However, the chemical strengthening was widely practiced for the glass-shaped processed product. This point is different from the glass plate GP of Example 1. [Comparative Example 2 Glass Plate GP] Comparative Example 2 In the glass plate GP, the glass substrate is gradually cooled, and then the shape is applied, the end face is ground, the upper and lower grinding processes, the end face grinding process, and the upper and lower grinding processes are performed to form an outer diameter of 2 〇··· The glass-shaped processed material having a thickness of 1.0 coffee was obtained, and the chemical strengthening treatment was not carried out at all on the glass-shaped processed material. This point is different from the glass plate GP of the embodiment. [Glass plate GP of Comparative Example 3] and glass of Comparative Example 3 were first made of GP-based glass, and then the glass substrate of glass N〇. i was gradually cooled, and then subjected to shape processing and end surface grinding (6 精 fine grinding), The upper and lower grinding processes and the upper and lower grinding processes are carried out to form a glass-shaped workpiece having an outer diameter of 2: two sheets having a thickness of 55 mm. However, the chemical strengthening treatment did not implement the glass-shaped processed material at all. This point is different from the glass plate GP of the embodiment 4. [Glass plate gp of Comparative Example 4] 97121371 21 200908200 Glass plate GP of Comparative Example 4, the glass substrate of glass n〇_1 was gradually cooled, and then subjected to profile processing and end face grinding (4 精 fine grinding) ), the upper and lower grinding processes, and the upper and lower grinding processes are performed to form a glass-shaped workpiece having an outer diameter of 2 mm and a plate thickness of 〇 5 mm. Then, the glass-shaped workpiece was immersed for 3 hours in a 〇03:NaN〇3=60%:40% mixed salt treatment bath maintained at 380 °C. In the glass plate gP of Example 端面, the end surface polishing process was performed, but the glass plate GP of Comparative Example 4 was subjected to end surface grinding (4 精 fine grinding), and the peripheral portion was rough. At this point, the glass plate Gp of Comparative Example 4 was different from the glass plate GP of Example 1. [Glass plate GP of Comparative Example 5] The glass plate GP of Comparative Example 5 was obtained by gradually cooling the glass substrate of the glass No. 3, and then performing the outer shape processing, the end surface grinding process (6 精 fine grinding), and the upper and lower grinding processes. And the upper and lower grinding processes are carried out to form a glass-shaped workpiece having an outer diameter of 2 〇 1 and a plate thickness of 0.5 mm. Then, the glass-shaped workpiece was immersed in a KN 〇 3 = 1 〇〇 % treatment bath maintained at 390 ° C for 3 hours. The glass plate GP of Comparative Example 5 was different from the glass plate GP of Example 9 or Example 在于 in that the temperature in the treatment bath was low and the impregnation time was short. [Glass plate GP of Comparative Example 6] The glass plate GP of Comparative Example 6 was obtained by gradually cooling the glass substrate of the glass N〇3, and then performing the outer shape processing, the end surface grinding process (6 精 fine grinding), and the upper and lower grinding. The processing and the upper and lower grinding processes are carried out to form a glass-shaped processed product having an outer diameter of 2 〇 1 mm and a plate thickness of 5 5 mm. The chemical strengthening treatment did not implement the glass-shaped processed material at all. This is different from the glass plate GP of Example g or Embodiment 97121371 22 200908200 10. [Glass plate GPj of Comparative Example 7 Glass plate Gp system of Comparative Example 7 n-outer shape processing, end face grinding processing (5 main book mark), glass glazing, and upper and lower grinding processing: two-cutting, end-face grinding Made from a glass shaped workpiece. Chemistry: Anti-Qiao·5· The object is completely unimplemented. , 掏 掏 shape processing [glass plate GP of Comparative Example 8] = Glass plate GP of Example 8 performs profile processing, end face grinding, upper and lower grinding, end face grinding, and upper and lower surfaces on pyrex@(registered trademark) glass Grinding process was carried out by forming a glass-shaped processed product having an outer diameter of 2〇1_ and a plate thickness of 1. The chemical strengthening treatment did not implement the glass-shaped processed material at all. The pyrex 8 (registered trademark) glass used in Comparative Example 7 and Comparative Example 8 is a glass having a very good chemical durability, and particularly a thickness of Comparative Example 8. 1. 〇mm glass plate 'currently used as a supporting semiconductor crystal Round glass plate of SW. According to the literature, the glass composition of pyrex® (registered trademark) glass is Si〇2: 81 wt%, B2〇3: 13 wt%, Na2〇: 4 wt0/〇, AI2O3: 2 wt%. The above is organized as shown in Table 2. 97121371 23 200908200 [Table 2] x. „ Example 1 Example 2 Example Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Example 1 Comparative Example 1 Comparative Example 3 Comparative Example 4 Comparative Example Comparative Example Comparative Example Comparative Example 8 Example Glass

No.

No.

No.

No.

No.

Pyrex® (registered trademark) No KNOa ·· NaNOa 60% : 40% KNOs ·· NaNOa 60% : 40% 003=100% KN〇3 : NaNOs 603⁄4 : 40% KN〇3=l 003⁄4 __ i*» Melt temperature melt immersion time plate thickness end face treatment 38 or 3 hours 0. 5mm grinding 42 hours 0. 5mm grinding 3 hours 1. Omm grinding 3 small 3 Qin 0. 5mm 600 No. 3 hours 1. Omm 600 No. 380 〇C 3 hours 0. 5mm 600 No. 360〇C 3 hours 0. 5mm 600 No. 400°C 15 hours 0. 5mm 600 No. 430°C 2 0 hours 0. 5mm 600E 15 small 4 0. 5mm 600 #〇20 hours 0. 5mm Grinding - No 0. 6mm Grinding 1. Omm Grinding 0. 5mm 600 No. 380〇C 3 hours 0. 5mm 400#.390〇C 3 hours).5mni 5 0 0号益-..川X No. 0. No. 0, 600 mm jfe. «»», -- No). 5 mm Grinding 1. Omm Grinding &amp; Bending Angle &gt;&gt; Example 6 to Example 11, 2, and Comparative Example 4 to Comparative Layer Thickness, The measurement was carried out with the maximum bending angle plate GP, and the average value is the measurement method of (four) and the maximum bending angle in the following month, which will be described later. 'Compression stress layer thickness [Glass plate GP of Example 1] The compression in the glass plate GP of Example 1 should have a large bending angle of an average of 53. . In addition, the most relevant

In the four glass plates of J, GP 97121371 24 200908200, the largest of the maximum bending angles is 62. , not at 3〇. The following. [Glass plate GP of Example 2] The thickness of the compressive stress layer in the glass plate GP of Example 2 was about 12 〇 #m, and the maximum 'large bending angle was an average of 55. . In addition, in the glass plate GP in which the measurement was performed, - the maximum bending angle was not 30. The following. [Glass plate GP of Example 3] The thickness of the compressive stress layer in the glass plate GP of Example 3 was about 1 〇〇 # , and the maximum p-bending angle was an average of 32. . Further, in the glass plate GP subjected to measurement, there was no maximum bending angle of 3 Å. The following. [Glass plate GP of Example 6] The thickness of the compressive stress layer in the glass plate GP of Example 6 was about i 3 〇 # m, and the maximum f-angle was an average of 48. . Further, in the glass plate Gp subjected to the measurement, there is no maximum bending angle of 30 or less. [Glass plate GP of Example 7] The glass plate GP of Example 7 had a compressive stress layer thickness of about 1 Å/m, and the maximum bending angle was an average of 54°. Further, in the glass plate Gp subjected to the measurement, there is no maximum bending angle of 30 or less. [Glass plate GP of Example 8] The thickness of the compressive stress layer in the glass plate GP of Example 8 was about 22 Å#m, and the maximum bending angle was an average of 32°. Further, in the glass plate Gp subjected to the measurement, there is no maximum bending angle of 30 or less. [Glass plate GP of Example 9] The thickness of the compressive stress layer in the glass plate GP of Example 9 was about 25 #m, and the maximum bending angle was an average of 50°. In addition, in the glass plate Gp subjected to the measurement, 97121371 25 200908200 does not have a maximum bending angle of 30. The following. [Glass plate GP of Example 10] The thickness of the compressive stress layer in the glass plate GP of Example 10 was about 20 // m, and the maximum bending angle was an average of 47. . Further, in the glass plate GP subjected to the measurement, the maximum bending angle was not 30. The following. [Glass plate GP of Example 11] The thickness of the compressive stress layer in the glass plate GP of Example 11 was about 24 μm, and the maximum bending angle was an average of 52. . Further, in the glass plate GP subjected to the measurement, there is no maximum bending angle of 30 or less. [Glass plate GP of Comparative Example 1] The glass plate GP of Comparative Example 1 had no compressive stress layer thickness, and the maximum bending angle was an average of 18°. Further, in the glass plate gp subjected to the measurement, there is no maximum bending angle greater than 30°. [Glass plate GP of Comparative Example 2] The glass plate GP of Comparative Example 2 had no compressive stress layer thickness, and the maximum bending angle was 13° on average. Further, in the glass plate gp subjected to the measurement, there is no maximum bending angle greater than 30 °. [Glass plate GP of Comparative Example 4] The thickness of the compressive stress layer in the glass plate GP of Comparative Example 4 was about 1 〇 〇 # m, and the maximum bending angle was 15° on average. Further, in the glass plate gp subjected to the measurement, there is no maximum bending angle greater than 30°. [Glass plate GP of Comparative Example 5] The thickness of the compressive stress layer in the glass plate GP of Comparative Example 5 was about 丨〇 #m, and the maximum bending angle was 25° on average. In addition, the maximum bending of the 4 piece of glass plate gp 97121371 26 200908200 The angle varies greatly, from 29° to 18. range. [Glass plate GP of Comparative Example 6] The glass plate GP of Comparative Example 6 had no compressive stress layer thickness, and the maximum bending angle was an average of 20. . In the glass plate GP subjected to the measurement, there is no maximum bending angle greater than 30°. The above results are shown in Table 3. [table 3 ]

Compressive stress layer thickness Example 1 1 00 ^ m - degree (average) Example 2 1 20 // m --~~__53° Example 3 100 ^ m ------ Example 6 130 ^ m - -~__32° Example 7 1 00 ^ m ---_481 Example 8 220 μ. m -—~__ Example 9 25 ym ----321_ Example 1 0 20 /xm ----~~~ ^— Example 11 24 // m - ill_ Comparative Example 1 None----52: ___ Comparative Example 2 None---- Comparative Example 4 1 00 ^ m ''---~~^__ Comparative Example 5 1 0 // m -~~~-Lll_ Comparative Example 6 None--Changer &amp; Λ,! 1 7?. AI 0 . n ---___ &lt;Example 1 to Example 3, and Example 6 The glass plate GP of Example u, and the glass plate GP of Comparative Example 1, Comparative Example 2, and Comparative Example 4 to Comparative Example ^> &lt; <Maximum Bending Angle of Glass Plate GP> &gt; As explained in step S15, the maximum bending angle is 3 〇. As described above, when the glass plate GP is peeled off from the semiconductor wafer SW and separated, a large force is not applied, and the semiconductor circuit is not damaged. The glass plate GP of Example 3 and the comparative example and the 97121371 27 200908200 glass plate GP' of Comparative Example 6 were subjected to an experiment of peeling the glass plate GP from the semiconductor wafer SW. The maximum bending angle 32 of the glass sheet GP of Example 3 is 32. The maximum bending angles of the glass sheets GP of Comparative Example 1 and Comparative Example 6 were 18, respectively. * and 20°. In the experiment of peeling the glass plate GP from the semiconductor wafer SW, the glass plate GP of Example 3 was peeled off with a small force, and the semiconductor circuit was not damaged. On the other hand, in the glass plate GP of Comparative Example 1 and Comparative Example 6, the glass plate GP was cracked before peeling, or a large force was applied to the semiconductor wafer gw to cause a semiconductor circuit formed on the semiconductor wafer SW. 'The book was broken 4 shells. It can be understood that the maximum angle of the glass plate G P needs to be 3 〇. the above. The bending angle of the agricultural floor of the glass plate GP is less than 30. However, since the flexibility is low, the entire surface of the glass plate GP and the semiconductor wafer SW is subjected to an adsorption force, and it can be understood that separation cannot be performed unless a large force is applied. Further, the maximum bending angle of the glass plate GP of the second embodiment is 55. In the glass plate GP of the second embodiment, the glass plate GP may be peeled off without the semiconductor circuit of the semiconductor wafer sw being damaged. Maximum bending (the larger the angle of 丨, the smaller the force can be easily bent and peeled off. Therefore, even the glass plate GP which has the ion exchange time extended to the above and has a larger bending angle is still It can be applied as a glass plate GP supporting the semiconductor wafer SW. &lt;&lt;Ion exchange of glass plate GP&gt;&gt; The glass plate GP of Example 1 and the glass substrate of the glass plate GP of Comparative Example 1 are the same. And the same shape, and the same end face treatment was performed, except that the glass plate GP of Example 1 was subjected to chemical strengthening treatment by ion exchange. [In contrast, the glass plate GP of Comparative Example 1 was not used. From 97121371 28 200908200 The chemical strengthening treatment was carried out by exchange. The glass plate GP of Example 1 was 53 with respect to the maximum bending angle, and the glass plate GP of Comparative Example 1 was only 18°. Similarly, the glass plate GP of Example 3, In the glass plate GP of Comparative Example 2, the maximum bending angle was 32 and 13. In addition, the maximum bending angle of the glass plate GP of Example 9 and the glass plate GP of Comparative Example 6 were 50. . 20. That is, if the chemical strengthening treatment of ion exchange is performed, the maximum bending angle can be easily ensured to be 3 〇 or more. &lt;&lt;Roughness of the peripheral portion of the glass sheet GP&gt;&gt; (\ Example 1 to The glass plate GP' of Example 11 and Comparative Example 1 to Comparative Example 8 had a thin curved surface of 5 mm or 1 mm, and thus the surface of the peripheral portion was rough: the degree could not be easily measured. 〇. 1, glass ¥ No. 2 and glass No. 3 'The outer diameter of 20mm, the thickness of 1 · 〇 且 and the upper and lower processed grinding treatment or polishing treatment, and measure the arithmetic mean above and below the plane Roughness Ra, the surface roughness substitution result of the peripheral portion was obtained. No difference was found in the types of glass N〇.丨, glass N〇. 2 and glass N〇. 3 n. V·../ 400 No. Grinding material: Ra=470~630mn No. 600 fine grinding and grinding: Ra=350~440nm Grinding material (degree of optical polishing): Ra=1〇~16nm, and in the above measurement, the measuring device uses Veec〇 Contact thickness gauge (type: Dektak 6M) made by the company. Use arithmetic mean roughness Ra(nm) was evaluated. The glass plate GP of Example 1 and the glass plate Gp of Comparative Example 4 were the same glass substrate and the same shape, and the same chemical strengthening was performed. 97121371 29 200908200, the difference In the glass plate GP of the first embodiment, the polishing process was performed, and the polishing process of the glass plate GP peripheral portion of Comparative Example 4 was carried out. The maximum bending angle was in the example. ~

The glass plate GP. is also 53°, and the glass plate GP of Comparative Example 4 is only j 5 . In the case of the cracking method of the comparative example 4, it can be said that the crack is caused by the occurrence of a small flaw or the like remaining in the peripheral portion. In other words, the glass plate GP which can be bent by 30 degrees or more can be produced without causing damage to the peripheral portion. 1 As described above, the difference in arithmetic mean roughness Ra does not occur depending on the type of glass No. 1, glass Νο·2, and broken glass N〇.3. Therefore, in the fourth embodiment to the first embodiment, the glass plate GPf which is subjected to the grinding process by the fine grinding of the peripheral portion is 30 degrees or more, so that it is understood that the grinding process of the 6-inch fine grinding is performed as long as it is performed. Yes. That is, if the arithmetic mean roughness Ra is 44 or less, the glass plate GP is bent to 30 degrees or more. &lt;&lt;Thickness of compressive stress layer of glass plate GP&gt;&gt; 1/only Example 9 and Example 10, and the shape of the comparative example 5 and the thickness of the glass plate GP were the same, and 6 在 was performed at the peripheral portion. The grinding process of the fine grinding is the same. However, in Comparative Example 5, in the conditions in which chemical strengthening treatment was carried out by ion exchange, the melt temperature was low and the melt impregnation time was also short, and the same as in Example 9 and Example 1. The thickness of the compressive stress layer of the glass plate Gp of Comparative Example 5 is 10 μm. At this time, the maximum bending angle is an average of 25 c. The variation of the experimental results of the glass plate GP of Comparative Example 5 is also very large, and the minimum is 18 °. The maximum bending angle of the semiconductor circuit is not subject to damage such as breakage when the glass plate GP adhered to the semiconductor wafer is peeled off is 97121371 30 200908200 degrees 30. This phenomenon can be considered to be caused by the thickness of the compressive stress layer being only the core. In addition, the reason why the maximum bending angle variation of Comparative Example 5 is large is considered to be that when the thickness of the compressive stress layer is as small as 1 〇&quot;, the maximum bending angle of the thickness of the compressive stress layer is changed. Big change. Move. Further, in Comparative Example 丨, Comparative Example 2, and Comparative Example 6 in which no chemical strengthening treatment was performed, the maximum bending angle was 2 〇. the following. Therefore, the glass plate GP' supporting the semiconductor r wafer SW can be said to require a compression stress layer thickness of at least 15 #m or more. It is best to say that the thickness of the compressive stress layer is 20/^m or more, as in the case of the glass plate Gp. Next, in Example 8, compared with Example 6 and Example 7, except for the ion exchange treatment, the same conditions are the same, and the chemical strengthening treatment conditions of ion exchange are high temperature of $4 〇 (rc, and The refining time of the refining liquid is as long as 15 hours. Therefore, the measured value of the compressive stress layer thickness of Example 8 will be a very thick value of 220 # m. However, if the maximum bending angle is 32, when the C is bitter, the semiconductor crystal will be hard. The peeling of the glass plate adhered on the circle sw ensures that the maximum bending angle of the semiconductor circuit or the like is not 30°. The measured value of the thickness of the compressive stress layer has a compressive stress layer thickness greater than 22 〇 #m. In the case of the shape itself, warping and undulations are likely to occur. If warpage or undulations occur, the function of the wafer supporting the glass substrate cannot be utilized, and it cannot be used. Therefore, the thickness of the compressive stress layer must be set to 220 or less. It is preferable to set the thickness of the compressive stress layer to 16 0 // m or less. &lt;&lt;Thickness of Glass Plate GP&gt;&gt;&gt; 97121371 31 200908200 Glass substrate and shape in Example 1 and Example 3 The end face treatment and the off-exchange process are the same, except that the glass plate (3) plate of the embodiment 1 has a thickness of 0.5 mm, and the glass plate Gp of the embodiment 3 has a thickness of L. The maximum bending angle is 53. 32. The thinner the glass plate is, the larger the maximum bending angle is. It is presumed that the thicker the glass plate is, the smaller the maximum bending angle is. As mentioned above, because the maximum bending angle is to be ensured 3 The maximum thickness of the GP is &quot; job. Bu plug... Pre-, the glass plate GP is as thin as possible. The reason is the semiconductor wafer sw supported by the glass plate GP (thickness (10)^^ to 5〇) ^m), and the semiconductor wafer sw (thickness: 5 〇 / / m or more) which does not require the glass plate GP, is processed under the same conditions on the semiconductor manufacturing apparatus. If the glass plate Gp is made as thin as possible, The thickness of the semiconductor wafer is reduced to the thickness of the side of the wafer, and the degree of freedom is increased. The upper limit of the thickness is substantially equivalent to the limm. The rigidity of the wafer supporting glass substrate cannot be maintained without the stability of the method It is preferable to set the thickness of the glass plate to 0.3 mm or more and l.lnrn or less, preferably 〇.5 or more and 1 〇 or less. Even the glass plate GP with a thickness of 0.3 mm faces When the glass is supported in the horizontal direction, the plate GP is still not bent by its own weight. Although the semiconductor wafer sw having a thickness of 50 // m is flexed, the semiconductor wafer SW is adhered to the thick layer. 3mm glass plate GP In the case of a glass plate GP having a thickness of 0.3 nm, the semiconductor wafer SW having a thickness of 5 Å can be horizontally supported. <Last impact resistance to the peripheral portion of the glass plate GP> &gt; 97121371 32 200908200 The glass plate GP of Example 1, Example 4, Example 5, Example 7 and Example 9, and the glass plate GP of Comparative Example 3, Comparative Example and Comparative Example $ were measured for impact resistance of the peripheral portion. . Each of the examples or the ratios = examples were measured on a glass plate Gp of 3 to 1 piece. In addition, the impact resistance of the peripheral portion of the present embodiment (4) refers to the resistance to impact applied from the glass plate Gp in the radial direction, and the measurement method will be described later using Figs. 6A to 6C. In addition, when the glass plate GP is damaged, an error occurs in the measured value of the impact resistance. Therefore, the glass plate Gp of the sample to be impacted is given only one impact to the sheet, even if the glass sheet Gp has no cracks. It is also not used for the second impact measurement. [Glass plate GP of Example 1] The thickness of the compressive stress layer in the glass plate GP of Example 1 was about 1 〇〇β ^, and in the measurement of the impact resistance, when the drop distance was 14 cm, the glass plate GP was not cracked, and the falling distance was At 24cm, the glass plate GP will be destroyed. [Glass plate GP of Example 4] The thickness of the compressive stress layer in the glass plate GP of Example 4 was about 1 〇〇# m, and the glass plate GP was crack-free and the drop distance was 24 cm when the impact resistance was measured and the drop distance was 14 cm. At the time, the glass plate GP was destroyed. [Glass plate GP of Example 5] The thickness of the compressive stress layer in the glass plate GP of Example 5 was about 1 〇〇# m, and in the measurement of the impact resistance, the drop distance was 14 cm, the drop distance was 24 cm, and the drop distance was 34 cm. There was no crack in the board GP. [Glass plate GP of Example 7] The thickness of the compressive stress layer in the glass plate GP of Example 7 was about 1 〇〇//in, and in the measurement of the impact resistance of 97121371 33 200908200, when the drop distance was 14 cm, the glass plate GP was crack-free. When the distance is 24 cm, the glass plate GP is destroyed. [Glass plate GP of Example 9] - The thickness of the compressive stress layer in the glass plate GP of Example 9 was about 25 # m, and in the measurement of the impact resistance, when the falling distance was 14 cm, the glass plate GP was free from cracks and falling distance. At 24 cm, the glass plate GP was destroyed. [Glass plate GP of Comparative Example 3] The glass plate GP of Comparative Example 3 had no compressive stress layer thickness, and in the measurement of the impact resistance, the glass plate GP was broken when the dropping distance was 2 cm. [Glass plate GP of Comparative Example 7] The glass plate GP of Comparative Example 7 had no compressive stress layer thickness, and in the measurement of the impact resistance, the glass plate GP was broken when the dropping distance was 2 cm. [Glass plate GP of Comparative Example 8] The glass plate GP of Comparative Example 8 has no compressive stress layer thickness, and in the measurement of the impact resistance, when the drop distance is 14 cm, there will be 2 in the glass plate GP system, and the sheet will be crack-free. And one of the three pieces was damaged. When the drop distance is 24 cm, the glass plate GP is destroyed. The above results are shown in Table 4. 97121371 34 200908200 [Table 4] Drop distance (cni2_^ The glass 14 after falling has no cracks (5 of the 5 pieces) Example 1 1 ^ - 24 damage (3 of 3 pieces) Example 4 14 No cracks (5 out of 5) 24 Destruction (3 out of 3) 14 No cracks (3 out of 3) Example 5 24 No cracks (3 of 3) All of the sheets 34 No cracks (5 out of 5) Example 7 14 No cracks (5 out of 5) 24 Breaking (3 out of 3) Example 9 14 No cracking (3 out of 3) 24 Destruction (3 out of 3) Comparative Example 3 2 Destruction (7 out of 7) Comparative Example 7 2 Destruction (10 out of 10) ^~ Compare Example 8 14 2 out of 3 pieces were crack-free, and 1 of 3 pieces were broken - 24 ^ destruction (3 of 3 pieces) &lt;Example 1, Example 4, Example 5, Implementation Glass plate GP of Examples 7 and 9 and glass plate GP of Comparative Example 3, Comparative Example 7, and Comparative Example 8 &lt;&lt;&lt;&gt; Chemical strengthening treatment of glass plate GP&gt;&gt; Glass of Example 4 board GP, and the glass plate GP of Comparative Example 3 are the same glass substrate and have the same shape 'and perform the same end face treatment, except that the glass plate GP of Example 4 is subjected to chemical strengthening treatment by ion exchange. On the other hand, the glass plate Gp of Comparative Example 3 was not subjected to the chemical strengthening treatment of ion exchange. The glass plate (9) of Comparative Example 3 was broken at the falling distance ^, and the glass plate GP of Example 4 was even dropped. The distance is 14cm, and the cracks appear in the helmet. That is, if the chemical strengthening treatment of ion exchange is performed, the height of the impact resistance of the material A said to the peripheral portion can be about 7 times. The above, and thus the next six secrets, it is known that in the promotion of the financial impact on the peripheral part, the chemical exchange of ion exchange π * ^ Handcuffed king 5 is important. 97121371 35 200908200 Chemical strengthening treatment is an important matter The reason can be understood by the following.

The glass plate GP of Comparative Example 3 and the glass plate GP' of Comparative Example 7 had the same shape and the same thickness, and were subjected to chemical strengthening treatment without ion exchange. The difference between the two is that the glass substrate of the glass plate Gp of Comparative Example 3 is glass No. 1, and the glass plate GP of Comparative Example 7 is pyrex (g) (registered trademark) glass, and Comparative Example 3 The glass plate GP was subjected to a grinding treatment by No. 600 fine grinding, and the glass plate Gp of Comparative Example 7 was subjected to a polishing treatment. In the Pyrex® (registered trademark) glass of Comparative Example 7, the strength (e.g., the modulus of elasticity) of the glass itself is higher than that of the glass N〇1 which is not chemically strengthened by comparison = 3, and therefore it is considered to have a higher impact resistance to the peripheral portion. Sex. Further, since the peripheral edge portion of the glass plate (3) of Comparative Example 7 was also subjected to grinding and polishing, the residual damage was small and less than the 6 〇 精 fine grinding grinding treatment of Comparative Example 3, so that cracking should be less likely to occur. But 疋’ of Comparative Example 3

^ ”... The glass plate GP sentence of the example f is destroyed when it is 2cm away from the Luo. It is known from this phenomenon that the type of glass is not too much, and the glass that is not chemically strengthened is resistant. The impact resistance is very low. In order to improve the impact resistance of the peripheral portion, the chemical strengthening treatment of ion exchange is an important matter. When improving the impact resistance to the peripheral portion, the use of ion-enhanced treatment is an important matter. It can be understood that the scorpion embodiment 4, the embodiment 7 and the ninth embodiment are the same shape and the same thick product, and the same end face treatment is performed. On the other hand, the glass No. 卜 glass Νο. 2 and Glass crucible. 3? Human glass substrate _ S different glass 97121371 36 200908200 Substrate 2 is chemically strengthened by optimal ion exchange, and Example 4 and Examples are determined by [Preparation of stress layer] described later. The depth of the compressive stress layer of 7 is about 100 # m, and the depth of the compressive stress layer of Example 9 is about 2 _. = As a result of the impact, although there is no crack at a distance of 14 cm, it is affected by a drop distance of 24 cm. Destruction. That is, resistance to the peripheral part If the impact is a glass plate GP that has been chemically strengthened, it is not related to the type of the glass substrate. Further, if the depth of the compressive stress layer is about 25 / zm or more, it does not depend on the compressive stress. In addition, the measurement of the impact resistance of the Bebes form on the peripheral portion is performed in accordance with the condition that the glass plate GP is given an impact only once. Reason: If the upper and lower surfaces of the glass plate GP or the peripheral portion are damaged, In the state where the measurement of the financial impact of the peripheral portion is performed, it is possible to determine that the impact resistance of the peripheral portion is lower in the case where the depth of the compressive stress layer is shallow. Further, the impact resistance on the peripheral portion is further improved. In terms of improving the performance, it is an important matter to use the ion father to carry out the vehicle strengthening treatment, which can be understood from the following. U Example 5 and Comparative Example 8 are both based on the outer diameter 2〇1_, and the thickness is applied to the upper and lower surfaces. In the fifth embodiment, the glass substrate is glass No. 1, and the final end face treatment is subjected to the grinding treatment of the No. 6 honing, and the tarnish case 8 is the glass substrate of Pyrex &lt; S) (registered trademark) ) glass, and most The end face treatment was a fine grinding. In Example 5, even if the distance Μ(10) was dropped, the glass plate was not damaged. In contrast, Comparative Example 8 cracked at a drop distance of 24 cm, which means that the semiconductor wafer support is generally used. Pyrex® (registered trademark) glass of glass substrate, glass plate GP subjected to chemical strengthening treatment by ion exchange, has impact resistance to the peripheral portion of 97121371 37 200908200. From the above results, it is important to compress the stress layer, and In the process of abutting or cleaning with a positioning pin or the like, the depth of the compressive stress layer of the glass sheet GP which can withstand the applied impact will have to be set to 15 #m. Since the glass sheet gp is repeatedly used several times, the compressive stress layer is used. The deeper the depth, the less susceptible it is to damage. However, when the thickness of the compressive stress layer having a compressive stress layer thickness of more than 220#!!! is large, the shape itself is prone to warpage and undulation. That is, the thickness can be said so as not to cause the shape of the glass sheet Gp to warp itself. The thickness of the compressive stress layer is preferably set to 22 Å/m or less. In particular, the depth of the compressive stress layer is preferably from 25/m to lOO/zm. &lt;&lt;Roughness of surface of glass plate GP peripheral portion&gt;&gt; The glass plate GP of Example 4 and the glass plate gp of Example 1 have the same shape and the same shape, and the same The chemical strengthening treatment was different in that the peripheral portion of the glass sheet GP of Example 4 was subjected to a grinding treatment of No. 600 fine grinding. In contrast, the peripheral portion of the glass sheet Gp of Example 1 was subjected to a polishing treatment. Both of them did not crack when they dropped a distance of l4cifl, but were destroyed when the distance was 24 cm. If it is ensured that the impact resistance to the peripheral portion at a distance of i4 cm is not required, the final end treatment of the No. 600 fine grinding process is sufficient. In other words, the surface roughness of the peripheral portion may be 44 nm or less in terms of arithmetic mean roughness Ra. &lt;&lt;Thickness of glass plate GP&gt;&gt;

The glass substrate, the shape, the end surface treatment, and the ion exchange treatment in Example 4 and Example 5 were the same, but the difference was that the glass plate of Example 4 was GP 97121371 38 200908200, the plate thickness was 0.5 mm, and the glass plate GP of Example 5 was used. The thickness of the plate is. As a result of measuring the impact resistance of the peripheral portion, Example 4 did not cause cracking when the distance ΐ4α was dropped, but it was destroyed when the dropping distance was 24 cm. On the other hand, Example 5 has no cracking even if the drop distance is 34 cm. - As described above, Comparative Example 8 is generally used as a glass plate supporting the semiconductor wafer SW. The glass sheets GP of Example 4 and Comparative Example 8 each had a diameter of 2 mm and were polished on the upper and lower sides. On the other hand, the glass substrate of Example 4 has a thickness of 〇. 5 mm of glass No. 1, and the final end face treatment is a grinding process of 6 精 fine grinding, and Comparative Example 8 has a thickness of 1. 〇mm of pyrex® (registered trademark) ) Glass, which is processed by grinding and finishing. Both of Example 4 and Comparative Example 8 were destroyed when the dropping distance was 24 cm. In Example 4, no crack occurred at a drop distance of 14 cm. In Comparative Example 8, two of the three sheets measured at a drop distance of 14 cm were crack-free, and one of the three sheets was damaged. This table was improperly compared with the glass plate of Comparative Example 8, and the glass plate of Example 4 had the same or higher impact resistance to the peripheral portion. In other words, by performing the chemical strengthening treatment of the ion father, it is possible to achieve half the thickness of the sheet. 5 mm The impact resistance to the peripheral portion of the same level or higher than that of the conventionally used comparative example 8 is achieved. Further, the thickness of the glass plate Gp used in the Japanese Patent Laid-Open Publication No. 2005-057046, or JP-A-2006-156633 is four types, such as 0.625 mm, 725 mm, 825.825_, and i 000 mm. Therefore, if the thickness of the glass plate Gp is used, such as the case of the case, the glass plate Gp, in addition to the flexibility or the impact resistance to the peripheral portion, is still able to increase the weight and durability of 97121371 39 200908200. &lt;Measurement method of compressive stress layer of glass plate GP&gt; Fig. 4 is a view showing a method of compressive stress layer thickness 系 of the glass plate GP. - Determination of the thickness of the compressive stress layer (1) • If the compressive stress generated by chemical strengthening exists in the glass plate Gp, the compressive stress partially exhibits birefringence due to the photoelastic effect. The glass plate GP is placed between the orthogonal polarizing plates, and if the glass plate (3) is adjusted, the clear and bright areas of the rim are observed in a wide field of view. The thickness of the compressive stress layer can be measured by measuring the width of the bright region. With respect to Examples 1 to 8 and Comparative Example 4 (glass Ν〇 or glass No. 2) in which the stress reduction layer was deep, the thickness of the compressive stress layer was measured in accordance with the present method. In Example 9 to Example u and Comparative Example 5 (glass No. 3) in which the compression stress layer was shallow, the bright shell region was too thin to accurately measure the thickness. The glass plate 外径 having an outer diameter of 201 mm shown in Fig. 4(a) is first cut by a diamond cutter along a line 42A and a line 42B having a width of two. Then, in the vicinity of the center portion of the strip-shaped glass piece which was cut, the line 43A and the line 43β were widened by 2 mm, and the same was cut by a diamond cutter. The cut glass piece was cut along the line A and the line 42B, and the cut surface was subjected to grinding and grinding. After the glass piece was ground, it was finely ground into a ground glass piece 44 having a thickness of about 3 mm and having an upper and lower surface converted into a polished surface. The transparent glass 47 shown in Fig. 4(b) is brought into contact with the polished glass sheet 44 by a polishing surface thereof and fixed by a hot melt adhesive. After the removal of the excess hot-melt adhesive, it was confirmed that the entire polished surface of the glass piece 44 penetrated the through-glass 47 and the transparent light penetrated. The surface 45B of the glass piece 44 is a cut surface cut along the line 43B in Fig. 4 (a) 97121371 200908200, and the surface 45A is a cut surface cut along the line 43A. The surface 49 corresponds to the upper surface of the glass sheet GP shown in Fig. 4(a), and the surface 48 corresponds to the lower surface of the glass sheet GP. f is inserted between the polarizing plate 51A and the polarizing plate 51B having the polarizing surfaces orthogonal to each other as shown in Fig. 4(c), and inserted into the carrier glass 47 of the bonded glass piece 44. Then, the light source 53 disposed under the polarizing plate 51B illuminates white light. The carrier glass 47 to which the glass piece 44 was adhered was observed from the direction above the polarizing plate 51A. The results of the observed ground glass sheet 44 are summarized as shown in Fig. 4(d). When viewed from the upper direction by the orthogonal polarizing plates 51a and 51B, no darkness was observed in the glass piece in which the compressive stress layer was not present. However, it is apparent that a chemical strengthening treatment for performing ion exchange is performed to have a compressive stress layer. The ground glass sheet 44 is observed to have a region 44T1 and a region 44T2 which are brightly penetrated along the face 48 and the face 49, and thus the regions 44T1 and 442 are compressive stress layers. In addition, the central area 44Τ3 can also be observed with less brightness. In the central region of the region, 44Τ3 is a region where tensile stress occurs. Further, the opaque regions 44Β1 and 44β2 exist in the form of dark lines. This region exactly offsets the compressive stress and the tensile stress, and where the suppression stress occurs, a dark region can be observed between the crossed polarizers. The depth of the compressive stress layer can be measured by measuring the thickness of the bright portion in micrometer units using a microscope 55 with a length measuring function. The surface 48 and the surface 49 are phased: on the upper and lower surfaces of the glass plate GP, and the front of the ion replacement is performed by using the solution of the solution. The thickness DE from the face 48 and the face 49 to the light transmitting region 44Β1 and the region 44β2 is measured in micrometer units. However, since the thickness of the compressive stress layer is thick, the compressive stress and the tensile stress cancel each other. The contrast between the opaque regions 44B1 and 44B2 of 200908200 is low, and cannot be measured correctly. Therefore, the measurement was carried out according to the following measurement method. Measurement of Thickness of Compressive Stress Layer (Part 2) Example 8 measures the thickness of ion exchange. The method uses a ground glass piece 44 prepared according to the thickness of the compressive stress layer (1), and uses a EPMAC Electron Probe Micro-Analysis (Electron Micro-Analysis Analyzer) to perform a linear analysis of nano (Na) (on-line elemental analysis). . The term "EpMA" refers to an analysis of the characteristic X-rays generated by the interaction of the sample and the electron beam by irradiating the surface of the sample with an electron beam adjusted to about 1 #m. The "sodium (Na) linear analysis using bismuth" refers to the element distribution analysis on the inner side of the glass by the surface 48 or the surface 49 of the glass piece 44. From the line distance to the inside of the glass and the concentration of the detected sodium, it is possible to specify the region where the ion exchange is not initiated, and the turning point where the clock and the nano-concentration where ion exchange occurs are increased. The distance from the faces 48 and 49 to the position of the inflection point is regarded as a compressive stress layer. The thickness of the compressive stress layer of Example 8 in accordance with the present method is 22 瓜. The measurement of the thickness of the compressive stress layer (which causes the linearly polarized light to affect the light due to the force generated in the object (the compressive stress in this embodiment) when passing through a transparent object such as glass. By measuring the influence 'It is possible to analyze the force acting inside the object. This method is generally called "photoelastic analysis method" and has been generalized according to JIS specification (r-3222). There is a commercially available surface stress meter. The compressive stress layer enters the shallower In Example 9 to Example 11, and Comparative Example 5 (glass n. 3), the thickness of the compressive stress layer was measured by photoelastic analysis. The glass plate GP shown in Fig. 4 (a) 97121371 42 200908200 was used as it is. In addition, using the present method 'try to measure the compressive stress layer into the deeper example i to the eighth embodiment, and the comparative example 4 (glass N〇. 1 or glass Νο·2), but the image required for the analysis cannot be detected. And the method is not measured. . . . <Method for measuring the bending angle of the glass plate GP> Fig. 5 is a view showing the method for measuring the bending angle of the glass plate GP. In Fig. 5(a), the thickness is 25x wide, 200x deep and 250mm. Sticking on hard board 61A such as wood or iron plate A soft sheet such as a rubber sheet or a plastic sheet having a width of 200 mm and a width of 250 ft., 62 Α. The same size hard plate 61 Β ' of the same size soft sheet 62β is attached and the sides of 28 nnnx 25 Omm are aligned, and the bending can be performed at the point A. A hinge is attached near the A point. The hard plate 61A with the soft piece 62A is fixed in a fixed state, and the hard plate 61B with the soft piece 62B is bent at the A point. Then, the thickness is 25x wide 150x deep 250mm. The cylindrical hard plate 65 is finely ground into a semi-cylindrical cylinder having a depth of 250 mm and a radius of 12.5 mm. On the semi-cylindrical hard n-plate 65, a second soft sheet 66 having a thickness of 3 mm x a width of 290 x 250 is pasted as shown in Fig. 5. In the measurement of the bending angle of the glass plate GP, the glass plates GP of the respective examples and the comparative examples are arranged such that the point A coincides with the circular center line of the glass plate GP. Then, in order to keep the glass plate GP stationary, the above-mentioned 2 The semi-cylindrical hard plate 65 of the soft sheet 66 is pressed against the glass plate GP. The semi-cylindrical hard plate 65 is pressed against the position of the glass plate GP, and is located at the outermost part of the semi-cylindrical portion of the second soft sheet 66, and the glass plate gp The center line of the circle is in the same position 97121371 43 200908200 Next, as shown in Fig. 5(b), the hard plate 61β with the soft sheet 62B is rotated in the direction of the arrow 67 with the point A as a fulcrum. The glass plate (3) is attached with the second soft sheet. The lower semi-cylindrical circle of the semi-cylindrical hard plate 65 of 66 is curved by an arc. The angle of rotation in the direction of the arrow 67 is approximately Γ / - each entering the ridge angle. The so-called "bending angle" means the upper surface of the soft piece 62A, and the soft The angle 69 above the piece 62B. Further, the "maximum bending angle" means that the glass plate GP is lifted as far as possible in the direction of the arrow 67, and the glass plate (3) has an angle at which the turtle is cracked. The angle 69 above the soft sheet 62A and the upper surface of the soft sheet 62β is determined by using an indexer. The unit is measured. In addition, it can be seen that it is convenient to carry out the measurement only when the glass plate GP is placed in a plastic bag. The reason is that the plastic bag has the function of preventing scattering when the glass is cracked and cracked. Further, since the glass plate GP is cracked and stored in a plastic bag, the crack state can be observed in detail. &lt;Method for Measuring Impact Resistance to the Peripheral Portion of Glass Plate GP> The diameter of the glass plate GP supporting the semiconductor wafer SW is larger than the diameter of the supported semiconductor crystal gjsw. The reason is that the impact of the semiconductor wafer Μ itself is replaced by the glass plate Gp. This impact is a collision with a positioning pin (not shown) during positioning, a collision with a conveyance machine (not shown), a washing of the glass sheet Gp, or a collision with a wall surface of a storage unit (not shown). According to this, the main (four)' caused by the conveyance of the glass plate Gp or the like becomes an impact applied to the end portion of the glass plate Gp, and thus the hard ball drop strength test in which the hard ball is dropped by placing the glass horizontally and toward the center of the glass plate Gp. The impact generated will vary in the direction in which the force is applied. In addition, the impact of the money ball drop strength test towel on the peripheral edge of the glass plate 97121371 44 200908200 GP is difficult to evaluate. In the impact degree ( used in this time, the impact on the end portion was replaced by the above-mentioned = drop strength test, and the same impact such as when the glass plate Gp end portion was conveyed was evaluated, and the impact resistance was evaluated. Fig. 6A does not measure the impact resistance of the peripheral portion of the glass sheet Gp (4) = impact resistance 敎 H 7G, (4) is a side view, (_ front view. U 'Fig. 6B shows the impact resistance tester 7 An enlarged view of the vicinity of the glass plate Gp of the crucible. Fig. 6C shows a method of using the impact resistance tester 7A for impact resistance. As shown in Fig. 6A, the impact resistance tester 7 has: A base 73 composed of a red standard material of 45 〇 (χ direction) χ 18 (γ direction) mm and a glass 74 attached to the base 73 are received. The glass receiving chassis 74 is a chassis in which the glass plate GP is vertically erected, and a rubber circular plate 78 in which the glass plate (3) is vertically supported lightly is disposed on the susceptor 73. In the present embodiment, since a glass plate Gp having a diameter of 2 G1 mm is used, a rubber disk 78 having a diameter of 100 mm is used. Is the base 73 mounted with four fixed guide support clamps? 7. The fixed guide support jig 77 is mounted with two fixed guide members 76 parallel to the base 73. The two fixed guide members 76 are embedded in the two movable guide members 75 having the grooves. The drop hammer plate is composed of a red casket of 600 (Z direction) xl4 〇 (x direction) χ 18 (γ direction) _ size, and weighs about l. The drop hammer plate 71 is attached with a moving guide member on one side, respectively. Therefore, the drop plate 71 can slide the base 73 through the moving guide member 75 and the (four) guide member 76. Then, the thickness of the rubber circular plate 78 is adjusted to 97121371 45 200908200 until the glass plate GP collides with the center of the thickness of the drop hammer plate 71. As shown in Fig. 6B, the drop plate 71 was dropped from above, and the AP spot (which is within the range shown in Fig. 5) which initially collided with the glass plate GP was set. At the AP site of the drop hammer plate 71, the glass plate Gp collides with the drop hammer plate 71 every time the impact resistance test falls. The drop hammer plate 71 is a stainless steel plate for a drop hammer plate which is disposed at an Ap point so as not to be sunk along the shape of the peripheral edge portion of the glass plate GP, and is disposed with a z. 2 (z direction) x 60 (X direction) xl5 (Y direction) mra. 82. If the AP location of the glass plate GP directly touches the stainless steel plate for the drop hammer plate, the damage is first caused before the crack occurs due to the impact, and the damage is used as the starting point due to the weight or compression force of the drop hammer plate 71. The possibility of cracking. Therefore, on the stainless steel plate 82 for the falling weight plate, a foaming amine oleic acid tartar 83 having 5 (z direction) x 2 〇 (X direction) x 10 (Y direction) mm is adhered. The function of the foaming carbazide 83 has a function as a cushioning material. Further, the weight plate 71, the stainless steel plate 82 for the drop hammer plate, and the foaming urethane (10) were 1.5 kg. σ The position of βρ in which the glass receiving chassis 74 and the glass plate Gp are in contact with each other is also a method of not sinking along the shape of the peripheral edge portion of the glass plate GP, and the glass is subjected to the «15 direction (direction) χ15 (γ direction). Do not record = 84. X' is adhered to the glass-bearing (four) stainless steel plate 84 with an adhesive gas-making adhesive tape 85. In addition to the function of the buffer, the function of the private nr olefin adhesive tape 85 also has the anti-slip function of the glass plate GP. Furthermore, as shown in the plan (10), the drop hammer 71 stops = the height of the point is downward toward the ^, on the pedestal? 3 configuration is supported. The reason is that the impact resistance of the panel Gp is confirmed only by the impact force. ^, 97121371 46 200908200 Since the drop hammer plate 71, the stainless steel plate for the drop hammer plate, and the foaming urethane beryllium 83 are set to a total of 1.5 kg, not only the impact force but only the compressive force to the glass plate GP is The possibility of cracking of the glass plate GP. Actually, upper, 〇. lmm thickness of the glass plate GP as long as the drop plate 71 is placed slightly, it will cause the 玻璃. lmm thickness of the glass plate GP to crack. Therefore, the stopper 81 is disposed, and the impact force constituting only the drop hammer plate 71 is applied to the glass sheet Gp. As shown in Fig. 6C, the impact resistance of the glass plate GP was measured while the impact resistance measuring device 7 was tilted at an inclination angle of 0. In order to hold the glass plate Gp on the rubber circular plate 78, the inclination angle 0 is set to about 6 to 7. angle. The glass plate GP is allowed to stand at a predetermined position, and the falling hammer plate 71 is pulled up to the falling distance FL and a natural falling body is applied. The drop distance is measured in units of 1 cm. As described above, when the measurement of the impact resistance is carried out, the measurement of the variation is also considered, and at least three or more sheets of the glass sheet Gp obtained under the same conditions are used, and the impact resistance of the same drop distance is measured. Further, the glass plate GP of the sample to which the impact was applied was given only one impact. However, it is preferable to put the glass plate GP into a transparent polyethylene bag and perform measurement. The reason is that even if the glass plate GP is crushed and cracked due to the impact, if it is placed in a transparent polyethylene bag, scattering does not occur. In addition, since the foamed urethane 8 3 is cracked after each collision, the re-sticking is replaced immediately after each collision. Since the gas-based adhesive tape 85 does not frequently crack as the foamed urethane 83, it can be replaced as needed. <Embodiment 2: Glass plate GP coated and strengthened> In the first embodiment, the chemically strengthened glass plate GP has been described. In addition to the chemically strengthened glass plate GP, a maximum of 3 turns can be provided even if the glass plate GP of the reinforced 97121371 47 200908200 is coated. The above curved glass plate can provide a glass plate Gp having impact resistance at the peripheral portion. The following needles will be described for the coated tempered glass sheet Gp which satisfies this condition. &lt;Glass substrate&gt; The glass substrate used for applying the tempered glass sheet GP was the same as in the above-described first embodiment, and glass Ν·2, glass Ν〇·2, and glass N〇 3 were used. Since it is not necessary to perform chemical strengthening, it can be a G 5 mm thick or 1 () thick copper or alkali-free glass. As in the embodiment i, it is preferable to use a glass substrate in which a glass substrate having a thickness of 1.1 Å and a thickness of 1.1 is adhered to the wafer and supported. Further, the end surface treatment of the glass substrate was reinforced to an arithmetic mean roughness of Ra of 400 nm or less. &lt;Coating Agent&gt; The coating agent for improving the flexibility of the glass substrate or the impact resistance of the peripheral portion includes polyethersulfone, and the solvent of the coating agent includes: aromatic hydrocarbon, halogenated Any of smoke, cockroach, ketone, nitrile, and sub-rock. The solvent is selected from the group consisting of aromatic, nicotine, vinegar, and terpene nitriles and sub-stones in order to stabilize the coating. The coating method of the coating agent on the glass substrate is carried out by a square wire such as dip coating, flow coating, spin coating, light coating, spray coating, screen printing, rubber printing, and the like. After the coating was sewed on the glass substrate, the coating was dried without steps, 25 Gt~to. The glass-reinforced GP can be obtained by the firing step of C. The film thickness of the coating film is 2#m to 〇#m, preferably 4 is 97121371 48 200908200. If the film is raised or the impact resistance of the peripheral portion is:: 'The flexibility of the glass substrate If 10 hearts are mentioned, the flexibility can be traced. If the film thickness of the coating film is too small. The effect of improving the impact resistance of the u k or the peripheral portion of the coating film is more than that of the peripheral portion of the substrate which can be used as the substrate (4) and (4), and the glass substrate is removed from the glass substrate. The reason is that it can be coated to avoid the occurrence of micro cracks that occur due to bending, and to increase the sound: the formation of the i-type is the same as the chemical strengthening treatment of the same level of compressive stress layer, which will increase the impact resistance. . (Industrial Applicability) In this example, a 2〇〇mm semiconductor wafer is used as a front-end semiconductor wafer sw or a new generation 45〇2-曰曰 round SW. The wafer of the present invention supports a glass substrate. Further, in the present embodiment, a double-sided adhesive film AD having an adhesive which is reduced in adhesion by ultraviolet rays is used as an example. Double-sided adhesive film... It is also possible to support a glass substrate which is different from a plastic material by an adhesive 111 having a heating property of M lGGt: to 25{rc and having a thickness of (4). The heat resistance is also excellent. At this point, since the heat-resistant temperature of the plastic wafer supporting member is low, it is not possible to use it depending on the material. Therefore, the wafer supporting glass substrate of the present invention can be applied even when the semiconductor wafer SW of the double-sided adhesive film which is heated to reduce the adhesiveness of the adhesive layer is ground or the like. Furthermore, the wafer supporting glass substrate is different from the plastic wafer supporting member because the expansion coefficients of the glass and the germanium wafer are generally in the same range, so that even when the temperature changes, it is not easily affected by the expansion, V / 曰97121371 49 200908200 There is almost no possibility of warping with temperature changes like a plastic wafer support member. BRIEF DESCRIPTION OF THE DRAWINGS ® 1 is a flow chart for peeling off a glass plate GP after a glass plate GP is adhered to a semiconductor wafer sw on which a semiconductor circuit is formed. In Fig. 2A, (a) is a state in which the semiconductor wafer cassette is adhered and fixed to the glass sheet Gp; and (b) is a step of grinding. r \ Fig. 2B, (c) is a cross-sectional view of the swept semiconductor wafer sw; (d) is a glass plate Gp pattern with a peeling tape for the glass; (e) a semiconductor wafer sw is attached to the vacuum chuck A cross-sectional view of the state. In Fig. 2C, (f) is a half-way diagram of peeling from one end of the glass sheet Gp. ~ (g) is a state in which the double-sided adhesive film AD is peeled off from the semiconductor wafer sw. U is a perspective view of the glass plate GP. (b) and (c) are enlarged views of the peripheral portion of the glass sheet GP. Fig. 4 (a) to (4) are graphs showing the thickness of the contraction stress layer of the glass against the GP. Fig. 5U) and (b) are diagrams showing the method of measuring the bending angle of the glass sheet. Fig. 6A (a) and (b) are diagrams of the impact resistance measuring device 7. Fig. 6B is an enlarged view of the glass plate of the impact resistance 四 (4). Fig. 6C shows the impact resistance of H 70 when the impact resistance is measured. 97121371 50 200908200 [Main component symbol description] 31 Grinding device (diamond grinding disc 35 vacuum chuck 42A, 42B, 43A, 43B line 44 grinding glass sheet 44B1 &gt; 44B2 opaque area 44T1, 44T2, 44T3 area 45A, 45B, 49, 48 side 47 Carrier glass 51A, 51B Polarizer 53 Light source 61A, 61B Hard board 62A, 62B Soft sheet 65 Semi-cylindrical hard board 66 2nd Soft sheet 70 Impact resistance tester 71 Drop hammer plate 73 Base 74 Glass receiving chassis 75 Moving guide member 76 Fixing guide member 78 Rubber disc 81 Stop 82 Stainless steel for drop hammer plate 97121371 51 200908200 83 Foaming amine base Formate 84 Glass plate for stainless steel plate 85 Vinyl chloride tape AD Double-sided adhesive film DD Thickness DE Thickness DT Glass release tape GP glass plate (GP1, GP2...Upper and lower L OD PE peripheral edge (end face) SW Semiconductor Wafer 97121371 52

Claims (1)

200908200 X. Patent application scope: 1. - A wafer supporting glass substrate ' is adhered to a semiconductor wafer, and the wafer supported by the semiconductor wafer supports the glass substrate; characterized in that 'in order to support the wafer The substrate is stripped from the semiconductor wafer and bent above a predetermined angle. 2. The wafer-supporting glass substrate of claim </ RTI> wherein the maximum bending angle of the predetermined angle is as described above. 3. A wafer supporting glass substrate adhered to a semiconductor wafer having a predetermined diameter and supporting the semiconductor wafer and having a rectangular glass substrate having a diameter equal to or greater than a predetermined diameter; The wafer supporting glass substrate has impact resistance at least at the peripheral portion. 4. The wafer supporting glass substrate according to any one of claims 3 to 3, wherein the wafer supporting glass substrate has a chemically strengthened compressive stress layer. 5. The wafer-supporting glass substrate of claim 4, wherein the wafer/support wafer substrate comprises, for example, 2〇 or Lh〇. The wafer supporting glass substrate according to any one of claims 3 to 3, wherein the wafer supporting glass substrate has a coated coating layer. The thickness of the above-mentioned compressive stress layer is 15 # m or more and 220 / /. The thickness of the above-mentioned wafer supporting glass substrate is 0.3 mm to 1. 1 mm. /ra or less. 8. The wafer supporting glass substrate according to any one of claims 1 to 3, wherein the wafer supporting glass substrate has a first surface, a second surface, a second surface, a second surface, and a peripheral portion; A truncated portion and a curved surface are formed. Or the wafer supporting glass substrate of the above-mentioned first surface and the second surface, wherein the semiconductor wafer has a circular shape with a predetermined diameter, the crystal The circular supporting glass substrate has a circular shape having a diameter one turn larger than the predetermined diameter. 97121371 54