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TW200840842A - High work-function and high conductivity compositions of electrically conducting polymers - Google Patents

High work-function and high conductivity compositions of electrically conducting polymers Download PDF

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Publication number
TW200840842A
TW200840842A TW096150621A TW96150621A TW200840842A TW 200840842 A TW200840842 A TW 200840842A TW 096150621 A TW096150621 A TW 096150621A TW 96150621 A TW96150621 A TW 96150621A TW 200840842 A TW200840842 A TW 200840842A
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composition
conductivity
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psepve
layer
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TW096150621A
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English (en)
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Che-Hsiung Hsu
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Du Pont
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/08—Homopolymers or copolymers of vinylidene chloride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)
  • Paints Or Removers (AREA)

Description

200840842 九、發明說明： 【發明所屬之技術領域】 本發明揭示内容概言之係關於高導電性、高工作函數組 合物且更具體而言係關於此等組合物及其在電子 用途。 衣置f之 本申請案根據35 U.S.C. § 119⑷規定，主張2〇〇6年12月 29日申請的美國臨時申請案第嶋8,〇33號的優先 全文以引用之方式併入本文中。
【先前技術】 ，子裝置界定一類包括活性層之產品。此等裝置經 ^電子方法將電能轉化成輻射檢測信號，將韓射轉化成電 月匕’或包括一或多個有機半導體層。 有機發光二極體（0LED)係包括能電致發光之有機層的 有機電子裝置。OLED可具有以下構造： 陽極/緩衝層/EL材料/陰極。 陽極通常係透明且具有將電洞注人肛㈣中之能力㈣ 何材料’例如銦/錫氧化物(ITO)。陽極視情況支撐於玻璃 或塑料基板上。EL材料包括螢光化合物、螢光料光金屬 錯口物、共軛聚合物及其混合物。陰極通常為具有將電子 注入EL材料中之能力的任何材料（例如，Ca或叫。緩衝層 通常為導電聚合物且有利於將來自陽極之電洞注入扯材料 層中。該緩衝層亦可具有有利於裝置性能之其他特性。 業内仍需要具有改良特性之緩衝材料。 【發明内容】 本揭示内㈣述同時增料電聚合物水性分散液之導電 127930.doc 200840842 性及工作函數，該等分散液係藉由添加溶於高沸點溶劑或 咼沸點溶劑與水之混合物中之全氟化聚合酸而製得。該等 導電聚合物係藉由共軛單體與未氟化聚合酸於水中氧化聚 合而製成。該等高導電性及高工作函數導電聚合物用於 OLED作為陽極、光電伏打電池、透明導電塗層、及 Al2〇3之電容器陰極以及其他用途。 本發明揭示高導電性及高工作函數組合物，其包含含有 導電聚合物與全氟化聚合酸之水性分散液或溶液。 在某些實施例中，導電聚合物包括由共軛單體或共單體 與至少一未氟化聚合酸製得之聚合物。在某些更具體實施 例中，該等共料體係選自㈣、碼吩…塞吩并嗟吩及嗟 吩并砸吩。 在A施例中，該導電聚合物包括由共軛單體或共單體 與至少—未氟化聚合酸製成之聚合物。該等共轭單體可選 自由由3’4-伸乙基二氧基噻吩及3 4_伸乙基二氧基硒吩組 成之群。 *在某些實施例中，全氟化聚合酸係選自具有全氟_醚基· 石黃酸側鏈之全氟烯烴。在再一些實施例中，該等全氟化聚 口酉欠係選自回分子1全氟化磺醯胺。在又一些實施例中， 該全氟化聚合酸係TFE(四氟乙烯）與PSEPVE(3，6_二氧雜-心 甲基I辛烯）石黃酸之共聚物。在再一實施例中，該組合物 包括聚（3,4-伸乙基二氧基噻吩）_聚苯乙烯磺酸。 本發明提供導電性至少為1〇〇 ^公分之組合物。 本發明提供工作函數至少為51 eV之組合物。 本發明亦提供包括本揭示内容中所呈現之組合物的裝置 127930.doc 200840842 組件及裝置。 【實施方式】 導電聚合物水性分散液通常係藉由使共料體在未氣化 聚合酸存在下氧化聚合製得。該等導電聚合物具有低導電 性及低工作函數，此限制其在多種應用中之用途。
本揭不内容提出將全氟化聚合酸(PFA)添加至聚合物水 性分散液巾以達成高導電性及高卫作函數之技術。可首先 將PFA溶於或懸浮於諸如乙二醇、二甲基亞砜、二曱基乙 I胺N_甲基啦嘻咬及諸如此類等高彿點極性溶劑中。該 等高沸點溶劑之彿點較好高於12代。亦可先將該Μ: 於或分散於高沸點極性溶劑之混合物t。該添加亦可藉由 首先將高溥點溶劑添加至聚合物水性分散液中隨後添二在 水中之PFA溶液或分散液或藉由相反添加順序來實施。 導電聚合物水性分散液之初始導電性應至少為(M S(西 門子）/公分，使之在添加PFA聚合物後達成導電性大於ι〇〇 A刀且工作函數大於5」eV。就本揭示内容中所傳達資 訊之目的而言’押錢未氟化聚合酸之酸當量比應不超過 在士揭示内容中，共軛單體包括噻吩、硒吩、3,4·伸乙 基一虱基噻吩、3,4-伸乙基二氧基硒吩、噻吩并噻吩、噻 吩并晒吩及諸如此類、対及其共單體。聚合酸經域 化。該等全氟聚合酸（PFA)㈣為具有全氟，基4酸側鍵 之全敦烯烴。該等酸於水中之PU較佳低於-5。該等全靡 聚合酸包括Nafion®聚合物，即E」如p〇nt曲衝 and Company，Wilmington，叫嶋代用於TFE(四氣乙稀）與 127930.doc 200840842 PSEPVE(3,6-二氧雜-4-甲基-7-辛烯磺酸）之共聚物的註冊 商標。該酸亦包括高分子量全氟化磺醯亞胺。 就闡釋本揭示内容實施例之目的而言，聚（3,4_伸乙基二 氧基噻吩）(PEDOT)/PSSA導電聚合物水性分散液中添加有 Nafion®聚合物P_(TFE-PSEPVE)。如上文所闡述導電性大 於100 S/公分且工作函數大於5.1 eV。 间導電性及尚工作函數導電聚合物組合物可單獨作為陽 極使用而無ITO。其在钽及鋁電容器中亦用作聚合物固體 陰極。其亦可用作光電伏打電池之透明導體及透明塗層。 A)樣品製備及工作函數量測之通用程序·· 將實例及比較實例中所述之材料以2,000 rpm之旋轉速度 在30¾米χ3〇ί：米玻璃/銦/錫半導電氧化物（IT〇)基板上旋 塗1分鐘。該等1丁〇/玻璃基板由15毫米χ2〇毫米ιτ〇區域構 成且在中心具有100至15〇奈米之ΙΤ〇厚度。在15毫米毫 米ιτο區域的一個角處，延伸至玻璃/ΙΤ〇邊緣之汀〇膜表面 起到與兩個克耳文探針(Kelvin pr〇be)電極中的一個電接觸 的作用旋塗刚，清洗ITO/玻璃基板且隨後用氧電漿處理 ITO侧15刀鉍。利用樣品水性分散液旋塗後，用水潤濕的 棉條尖去除延伸IT0膜角上的沈積層。暴露Ιτ〇墊用來與 兩個克耳文探針電極中的一個接觸。然後使所沈積膜在空 氣=於，又疋在2〇〇 °c下之熱板上乾燥1〇分鐘。然後將約3〇 奈米厚度範圍之乾燥膜樣品放置於充滿氮氣之玻璃罐中， 然後保持封閉直至量測為止。 對於勢能量測，在量測樣品之前首先量測環境老化之金 127930.doc 200840842 考。將相同尺寸破璃上的金膜放置於在正方形鋼 =底4切割出之空腔中。在該空腔之側面上，有四個保 持央以使樣品片牢固地合 ，、持於適*位置。一個保持夾與電 、，/與電線連接之保持夹在角處夾住ΠΌ以與兩個克 ^,、、^針％極中的—個保持接觸。使金膜向上朝向自鋼蓋 八大出之克耳文探針尖端，使該探針尖端降低至略高於 、表面中、。然後將蓋子在四個角處用螺栓緊緊地固定 於正方形鋼容ϋ上。使正方形鋼容器上之侧口與導管連接 以容許氮氣吹掃過克耳文探針格，同時氮氣出口用其中插 入鋼針之隔#盍住以維持環境壓力。錢優化探針之探針 :定並在量測期間僅調節尖端高度。該克耳文探針尖端係 第電極之σ卩为，該第二電極亦與具有下列參數之
McAmsterKP6则克耳文探針計連接：丨）頻率（Ηζ):23〇; 2)幅值（任意）·· 2〇; 3) DC偏移（伏特）：樣品與樣品間有所 不同；4)上限反電勢（伏特）：2 ; 5)下限反電勢（伏 特广-2 ; 6)掃描/步：！ ； 7)觸發延遲（度數/全循環）：〇 ; 獲得（A)/資料（D)點：1024 ; 9) A/D 速率（Hz) : 124〇5 @19.〇循環；10) D/A :延遲（毫秒）：2〇〇 ; n)設定點梯度 (無單位）：0.2 ; 12)步長（伏特）：〇 〇〇1 ; 13)最大梯度偏差 (伏特）：0·00卜一旦跟蹤梯度穩定，記錄金膜與探針尖端 之間之接觸電勢差或CPD(以伏特表示）。定時檢查金與探 針尖端之CPD以確保計算樣品勢能之可靠參考值。對於樣 品與探針尖端之CPD量測而言，以與金膜樣品相同之方式 將每個樣品裝載於空腔中。在與樣品保持電接觸之保持夾 127930.doc 200840842 上，應格外小心以確保與暴露ιτο墊保持良好電接觸。在 CPD量測期間，使小氮氣流流經探針格而不干擾探針尖 端。在記錄樣品之CPD後，藉由使該樣品之cpd增加至4.7 eV與金的CPD之差來計算該樣品之工作函數。4.7 eV係環 境老化金膜之工作函數[Surface Science，316，（1994)，第 3 80頁]。從而作為將電子自材料表面移除所需的能量來確 定所量測材料之工作函數。 B)膜樣品製備、四探針電阻量測及計算導電性之通用程 序： 使一滴各個分散液樣品在3” x 1"顯微鏡載玻片上鋪展以 覆蓋該載玻片2/3區域。使過量液體傾斜至該載玻片一邊 以由薄絹吸收。在確保形成平滑、均勻液體層後，將該載 玻片放置於平坦表面上以在室溫下初始乾燥。然後將該載 玻片放置於設定在20(TC下之熱板上。當用表面溫度計監 測熱板達到該溫度後，使其在該溫度下再保持5分鐘。整 個作業係在空氣中實施。自該熱板移除該載玻片並用刺刀 片將膜修整為長條。該條之寬度介於G.2公分至0.7公分之 ^ 、長度為約3公分。然後垂直於該條之長度塗銀膏糊以 $ =四個電極。兩個内平行電極相距約G.3公分至〇·5公分 :由Keithley 225型電流源供應之習知電流施加於兩 Γ其他平行電極時將其連接至Kei她y 616型電位計用於 ϊ测電麼。知垃^ 次 ^ Π；至溫下所獲得之一系列相應電流/電壓 貝料以觀察县$、铃 遵循歐姆定律(0hm，s law)。由於實例及比 乂只例中所有樣品皆遵循歐姆定律，故對於相應電流/電 127930.doc 200840842 壓資料提供大約相同的電阻。實施量測後，用輪廊曲線儀 (Profilometer)量夠兩個内電極中區域之厚度。由於已知兩 #1内電極it pi '厚度、間隔長度及膜條之寬度，然後可 計算導電性。導電性單位表示為s(西門子)/公分。 ^ 實例： 比較實例1 該實例闡釋導電聚（3,4·伸乙基二氧基噻吩）PEDOT/聚（苯 乙烯磺酸）PSSA之導電性及工作函數。 籲 PED0T-PSSA係熟知導電聚合物。分散於水中之聚合物 係以商標名Baytron®-P(H.C· Starck之註冊商標）以若干等 級購自 H· C. Starck GmbH (Leverkuson，Germany)。講自 Starck之Baytron®-P HCV4(—種市售水性分散液產品）係用 來確立導電性及工作函數之基線。重量分析法測定 Baytron®-P HCV4樣品具有1.01% (w/w)固體，其應為存於 水中之PEDOT/PSSA。根據產品手冊，PEDOT:PSSA之重 ^ 量比為1··2.5。 由於PEDOT-PSSA之黏度極高，因此為方便製備均勻膜 使用去離子水來降低黏度。向2.5026克Baytron®-P HCV4 - 中緩慢添加2.5 106克去離子水。該稀釋將PEDOT-PSSA固 . 體降低至約0.50%(w/w)。然後用振蕩器將該混合物攪拌2 小時以確保充分混合。膜樣品製備及膜烘烤用於導電性及 工作函數量測皆描述在通用程序中。經測定工作函數為 4.97 eV。經測定四個膜樣品之導電性為6.9、13·4、5.3及 14.4 S/公分。工作函數相當低並與實例中之彼等相比，其 127930.doc -11 - 200840842 展示高約0.5至0.6 eV。 比較實例2 該實例闡釋高沸點溶劑乙二醇對BaytT〇n.p HCV4導電 性增加之影響不影響工作函數。 與僅使用水之比較實例i不同，該比較實例使用約1〇0/〇 乙二醇於水中之溶液。該1〇%溶液係藉由將〇·9996克乙二 醇添加至9.0098克水中而製得。將2·53克乙二醇/水溶液緩 十艾添加至2.5424克HCV4中。此溶液之量亦將PEDOT-PSSA 降低至約〇·5 1%。用振蕩器將該混合物攪拌2小時以確保充 分混合。該乙二醇/水溶液之量表示5.〇%(w/w)乙二醇於稀 HCV4中。用於導電性量測之膜製備闡述於通用程序中。 經量測兩個膜樣品之導電性為3〇314 s/公分及223 〇 8/公 分。該導電性資料與Η· C Starck GmbH在公司網站上所列 舉的資料一致，其中其報導經由添加5%高沸點溶劑二曱 基亞砜（DMSO)最小導電性為2〇〇 s/公分。更直接比較展示 於其中使用DMSO之比較實例3中。在該項公開技術内已熟 知諸如乙二醇、二甲基亞砜及諸如此類等高沸點溶劑可極 大增強PEDOT-PSSA之導電性。 根據相同量的每一組份製備相似混合物並使用相同方法 用於工作函數量測。經測定其具有4 95 eV之工作函數。儘 官當與僅添加水比較時導電性已增加至1 〇-2〇倍，但工作 函數仍與其中僅使用水稀釋之比較實例1中的工作函數相 同。該工作函數相當低並與實例中之彼等相比，其展示高 約 0.5 eV至 0.6 eV。 127930.doc -12- 200840842 比較實例3 該實例闡釋高沸點溶劑二甲基亞砜對Baytron®-P HCV4 之導電性增加的影響但不影響工作函數。 與僅使用水之比較實例1不同，該比較實例使用約10% 二甲基亞颯（DMSO)於水中之溶液。該10%溶液係藉由將 1.0034克DMSO添加至9.0033克水中製成。將3.0097克該溶 液缓慢添加至3.0196克11(：¥4中。該溶液之量亦使？£〇〇1[-PSSA降低至約0.51%。用振蕩器將該混合物攪拌2小時以 確保充分混合。DMSO/水溶液之量表示5.0%(w/w)DMSO溶 於稀HCV4中。用於導電性量測之膜製備闡述於通用程序 中。經量測兩個膜樣品之導電性分別為219.2 S/公分及 307.0 S/公分。該導電性資料與H. C· Starck GmbH在公司 網站上所列舉資料一致，其中其報導經由添加5%二曱基 亞砜（DMSO)最低導電性為200 S/公分。 根據相同量的每一組份製備相似混合物並使用與上文所 示相同的方法用於工作函數量測。經測定其具有4.97 eV之 工作函數。 儘管與僅添加水相比導電性已增加至1 0-20倍，但工作 函數仍保持相同。該工作函數相當低且與實例中之彼等相 比，其展示高約0.5 eV至0.6 eV。 實例1 該實例闡釋藉由將包含於乙二醇中之Nafion®聚合物添 加至Baytron®-P HCV4中增強工作函數而不損失高導電 性。 127930.doc -13- 200840842
Nafion⑧聚合物（一種全氟聚合酸）係TFE(四氟乙烯）與 PSEPVE(3,6-二氧雜-4-甲基-7·辛烯磺酸）之共聚物。該實 例中所使用Nafion®聚合物P-(TFE-PSEPVE)係藉由在真空 下於低於l〇°C之溫度下自Nafion®之水性分散液中緩慢去 除水而獲得。Nafion®之水性分散液係藉由將具有1050之 EW(當量重量：聚合物重量/磺酸基團）之P-(TFE/PSEPVE) 僅在水中加熱至約270°C而製備。該Nafion®水性分散液具 有含25%(w/w)P-(TFE/PSEPVE)之水，並用去離子水稀釋 至約12%，然後去除水以收集P-(TFE-PSEPVE)。所收集P-(TFE-PSEPVE)固體可溶解或分散於多種高極性溶劑或溶 劑與水之混合物中。應指出，任何全氟聚合酸（PFA)皆可 藉由在低於PFA1’聚結溫度π之溫度下自水性或非水性分散 液或溶液中去除液體介質來獲得。”聚結溫度”意指PFA之 乾燥固體固化成不能重新分散於水、其他極性溶劑或極性 溶劑混合物中之穩定固體的溫度。 在與Baytron®-PHCV4混合之前，首先製備Nafion®聚合 物/乙二醇溶液及乙二醇/水溶液。後一種溶液係用於如前 述比較實例中所實施降低HCV4之PEDOT-PSSA固體％，從 而降低其黏度。在玻璃小瓶中將0.7541克EW為1050之 P-(TFE-PSEPVE)添加至9·2534克水中。將該混合物加熱至 約120°C直至P-(TFE-PSEPVE)固體全部溶解為止。p_(TFE_ PSEPVE)於乙二醇溶液中之重量％(w/w)為7.51%。藉由將 0·9996克乙二醇添加至9.0098克水中製成含約iqo/^w/w)乙 二醇之水。首先於5.0833克Baytron®-P HCV4中緩慢添加 127930.doc -14- 200840842 0.5872克聚（TFE-PSEPVE)/乙二醇溶液。於該混合物中添 加5.5310克乙二醇/水溶液以降低？五〇〇丁-?88八聚合物固體 %，其變為〇·46%。水/乙二醇溶液與P-(TFE-PSEPVE)/乙二 醇之合併量表示9_8%(w/w)乙二醇於11(：¥4之最終調配物 中。以 PEDOT-PSSA 及 P-(TFE-PSEPVE)之量為準， P-(TFE-PSEPVE)與PSSA之酸當量比為0.2卜針對所期望 導電性及工作函數之總體考慮，將該比率規定為P-(TFE-PSEPVE)相對於PSSA之最佳濃度。 • 用於導電性量測之膜製備闡述於通用程序中。經量測兩 個膜樣品之導電性為357.8 S/公分及291.1 S/公分。根據相 同量的每一組份製備相似混合物並使用與上文所示相同的 方法用於工作函數量測。經測定其具有5.54 eV之工作函 數。該工作函數較比較實例1、2及3中之工作函數高約0.5 eV。亦應指出，導電性仍保持大約與比較實例2及3相同。 實例2 $ 該實例闡釋藉由將大量包含於二甲基亞石風中之Nafion® 聚合物添加至Baytron®-P HCV4中增強工作函數而不損失 高導電性。 ^ 此處使用實例1所用Nafion⑧聚合物P-(TFE-PSEPVE)。 * 在與Baytron®-P HCV4混合之前，首先製備Nafion®聚合物 /二甲基亞砜（DMSO)溶液及DMSO/水溶液。後一種溶液係 用於如前述比較實例及實例中所實施降低HCV4之PEDOT-PSSA固體％，從而降低其黏度。在玻璃小瓶中將1.05 10克 EW為1050之P-(TFE_PSEPVE)添加至8.9686克水中。將該 127930.doc -15- 200840842 混合物加熱至約120°C直至P-(TFE-PSEPVE)固體全部溶解 為止。P-(TFE-PSEPVE)於DMSO溶液中之重量％(w/w)為 10.49%。約10%(w/w)於水中之DMSO係藉由將1.0034克 DMSO添加至9.0035克水中而製成。首先向2.5048克 Baytron-P HCV4中緩慢添加2.5192克〇]\^0/水溶液以降低 PEDOT-PSSA固體％，其變為0.48%。向該混合物中添加 0.2023 克 DMSO/P-(TFE-PSEPVE)溶液。水/DMSO 溶液與 P-(TFE-PSEPVE)/DMSO 之合併量表示 8.3%(w/w)DMSO 存 於HCV4之最終調配物中。根據PEDOT-PSSA及P-(TFE-PSEPVE)之量，P-(TFE-PSEPVE)與PSSA之酸當量比為 0.21。出於所期望導電性及工作函數之總體考慮，將該比 率規定為P-(TFE-PSEPVE)相對於PSSA之最佳濃度。 用於導電性量測之膜製備闡述於通用程序中。經量測兩 個膜樣品之導電性為267.3 S/公分及231.3 S/公分。該資料 表明將P-(TFE-PSEPVE)聚合物添加至HCV4中仍保持其導 電性。尚未實施該材料之工作函數，但吾人預期其值與實 例1中所示5.54 eV相似，但其應稍低於實例3(5.64 eV)。 實例3 該實例闡釋藉由將更高（與實例1及2相比）量的Nafion® 聚合物添加至Baytron®-P HCV4中增加工作函數而不損失 高導電性。 此處使用實例1所用NaHon®聚合物P-(TFE-PSEPVE)。 在與Baytron®-PHCV4混合之前，首先製備Nafion⑧聚合物/ 乙二醇溶液及DMSO/水溶液。後一種溶液係用於如前述比 127930.doc -16- 200840842 較實例及實例中所實施降低HCV4之PEDOT-PSSA固體％， 從而降低其黏度。在玻璃小瓶中將0.7541克EW為1050之 P-(TFE-PSEPVE)添加至9.2534克水中。將該混合物加熱至 約120°C直至P-(TFE-PSEPVE)固體全部溶解為止。P-(TFE-PSEPVE)存於DMSO溶液中之重量％(w/w)為7.51%。約 10%(w/w)於水中之DMSO係藉由將1.0034克DMSO添加至 9.0035克水中而製成。首先向2.5066克Baytron®-P HCV4 中缓慢添加3.0132克〇1^8〇/水溶液以降低？£〇〇1^88八固 體％，其變為0.48%。向該混合物中添加0.0.5666克 P-(TFE-PSEPVE)/ 乙二醇溶液。水 /DMSO 溶液及 P-(TFE-PSEPVE)/乙二醇之合併量表示14.2% (w/w)之合併DMSO及 乙二醇存於HCV4之最終調配物中。根據PEDOT-PSSA及 P-(TFE-PSEPVE)之量，P-(TFE-PSEPVE)與 PSSA之酸當量 比為0·4 1。出於所期望導電性及工作函數之總體考慮，將 該比率規定為P-(TFE-PSEPVE)相對於PSSA之最佳濃度。 用於導電性量測之膜製備闡述於通用程序中。經量測兩 個膜樣品之導電性為153.9 S/公分及191.7 S/公分。該資料 表明添加P-(TFE-PSEPVE)聚合物至HCV4中仍具有導電 性，但若P-(TFE-PSEPVE)與PSSA之當量比變得遠大於 0.41，導電性可能開始下降。根據相同量的每一組份製備 相似混合物並使用與上文所示相同的方法用於工作函數量 測。經測定其具有5.64 eV之工作函數。該工作函數較比較 實例1、2及3中之彼等高約0.6 eV且表明P-(TFE-PSSA)與 PSSA之0.41當量比較0,21當量比提供稍高的工作函數。再 127930.doc -17- 200840842 次指出，當量比應保持低於1、較佳低於0.6。 比較實例4 該實例闡釋對於利用添加高沸點溶劑增強導電性導電聚 合物之最低導電性。 在該比較實例中，得自H. C. Starck GmbH (Leverkuson， Germany)之 Baytron®-P PH500(—種 PEDOT-PSSA 的水性分 散液）係用來確立使用高沸點溶劑達到高於100 s/公分之導 電性所需的最低導電性。經重量分析法測定Baytron®-P PH500樣品含有l,0%(w/w)固體，其應為存於水中之 PEDOT/PSSA。根據產品手冊，PEDOT:PSSA之重量比率 為 1:2.5 。
Baytron®-P PH5 00之黏度遠低於 Baytron®-P HCV4之黏 度，因此製備用於導電性量測之薄膜時無需稀釋。經測定 兩個膜樣品之導電性為0.85及0.53 S/公分。該導電性亦遠 低於Baytr*on®-P HCV4之導電性。然而，以下所示實例4表 明藉由添加溶於乙二醇中之NaHon®聚合物P-(TFE-PSEPVE)使導電性增加。 實例4 該實例闡釋藉由添加包含於乙二醇中之NaHon®聚合物 增強Baytron⑧-P PH500之導電性。 此處使用實例1所用Nafion®聚合物P-(TFE-PSEPVE)。 在與Baytron®-P PH500混合之前，首先製備Nafion®聚合 物/乙二醇溶液。在玻璃小瓶中將1.0512克EW為1050之 ?-(丁？丑-?8£?乂£)添加至8.8.9517克乙二醇中。將該混合物 127930.doc -18 - 200840842 加熱至約120°C直至P-(TFE-PSEPVE)固體全部溶解為止。 P-(TFE-PSEPVE)於乙二醇溶液中之重量％ (w/w)為 10.5 1%。首先向 5·0012 克 Baytron®-P PH500 中緩慢添加 0.3680 克 P-(TFE-PSEPVE)/乙二醇溶液。P-(TFE-PSEPVE)/ 乙二醇之量表示6.13%(w/w)乙二醇存於PH500之最終調配 物中。根據 PEDOT-PSSA 及 P-(TFE-PSEPVE)之量， P-(TFE-PSEPVE)與 PSSA之酸當量比為 0.19。 用於導電性量測之膜製備闡述於通用程序中。經量測兩 個膜樣品之導電性為288.7 S/公分及449.4 S/公分。該資料 表明將P-(TFE_PSEPVE)聚合物添加至PH500中極大地增強 PH500之導電性。該資料表明，為使導電性增強至大於1〇〇 S/公分最低導電性應大於0.1 S/公分。尚未實施該材料之 工作函數，但吾人預期其值與實例1中所示5.54 eV相似， 但其應稍低於實例3(5.64 eV)。 注意’在概述或實例中並非需要所有的上述工作，可能 不需要一部分特定工作，且注意除所述彼等外亦可實施一 或多種其他工作。另外，其中所列工作之順序未必係其中 對其實施之順序。 在上述說明中，已參考具體實施例闡述了若干概念。然 而，普通熟習此項技術者應瞭解，可對其進行各種修改及 改變而不背離如下文申請專利範圍中所闡明之本發明範 疇。因此，應認為本說明書及附圖具有闡釋性而非限定性 意義，且所有此等修改皆意欲包含於本發明範疇内。 上文已根據具體實施例描述了本發明之優點、其他益處 127930.doc -19- 200840842
2決問題之方案。然而，該等優點、益處及解決問題之 :案及任何可達成任何優點、益處或解決方案或使之L 出=要件皆不應被視為任何或所有中請專利範圍之關鍵、 必需或基本要件。 應瞭解’本文為清晰起見在單獨實施例之上下文中所述 之某些特徵亦可在單-實施例中組合提供。減，為簡便 起見在單一實施例之上下文中所述之各特徵亦可單獨或以
任何子組合方式提供。此外，當以範圍形式闡述數值時其 包括此範圍内的每一及各個數值。 在某些實施例中’本發明可解釋為排除任何未實質上影 響組合物或製程之基本及新穎特徵之要素或製程步驟。另 外’在某些實施例中，本發明可解釋為排除任何未在本文 中規定之要素或製程步驟。 在本文規定之各範圍内數值之使用應描述為近似值，如 同所述範圍内之最小值及最大值二者皆由詞"約"先行限定 一樣。如此，該等所述範圍可上下稍微改變以達成實質上 與該等範圍内之值相同的結果。同樣，當一個數值的一些 要素與不同值的要素混合時，該等範圍之揭示内容意欲表 不為包括在最小平均值與最大平均值之間的每個值在内且 包括可產生的分數值在内的連續範圍。此外，當揭示更寬 或更窄範圍時，其在本發明涵蓋範圍内應使來自一個範圍 之最小值與來自另一範圍之最大值相匹配且反之亦然。 127930.doc •20-

Claims (1)

  1. 200840842 十、申請專利範圍： 1. 一種兩導電性及高工作函數 合物及全氟化聚合酸之水性^其包含含有導電聚 2. 如請求们之組合物，其中該溶液。 體戋it如 " 电聚合物包含由共輛單 3 早體與至少一未說化聚合酸製得之聚合物。 ::組合物’其中該等共輛單體係選自嗟吩、 塞吩并售吩及噻吩并碼吩。
    4.如請求項3之組合物，其中該等共概單體係選自由3,4-伸 乙：二氧基隹吩及3.4-伸乙基二氧基砸吩組成之群。 如月求項1之組合物’其中該等全氟化聚合酸係選自具 有全氟、醚基-磺酸側鏈之全氟烯烴。 6 ·如明求項1之組合物，其中該等全氟化聚合酸係選自高 为子ΐ全氟化石黃蕴胺。 7·如印求項1之組合物，其中該導電性為至少1〇〇 S/公分。 8 ·如晴求項1之組合物，其中該工作函數為至少5 · 1 eV。 9·如請求項 1之組合物，其中該全氟化聚合酸係TFE(四氟 乙烯）與PSEPVE(3,6-二氧雜-4-曱基辛烯）磺酸之共聚 物0 1〇·如請求項9之組合物，其包含聚（3，4-伸乙基二氧基噻吩）_ 聚苯乙烯績酸。 11 · 一種裝置，其包含至少一包含如請求項1之組合物之 層。 12 · —種裝置，其包含至少一包含如請求項6之組合物之 層0 127930.doc 200840842 13. —種裝置，其包含至少一包含如請求項7之組合物之 層。 14. 一種裝置，其包含至少一包含如請求項8之組合物之 層。 15. —種裝置，其包含至少一包含如請求項9之組合物之 層。 16. —種裝置，其包含至少一包含如請求項10之組合物之 層。 127930.doc 200840842 七、指定代表圖： (一) 本案指定代表圖為：（無） (二) 本代表圖之元件符號簡單說明： Φ 八、本案若有化學式時，請揭示最能顯示發明特徵的化學式： (無）
    127930.doc
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