TW200846832A - Lithographic apparatus and device manufacturing method - Google Patents

Abstract

A lithographic apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate W; a projection system PS configured to project the patterned radiation beam in an exposure slit at the focal plane on a target portion of the substrate W, wherein the projection system is provided with an optical element close to the exposure slit, and the apparatus further comprises a levelling system 10 for measuring a height of the substrate W on a position away from the exposure slit and a controller for controlling a position of the substrate table WT so that the substrate is in the focal plane of the projection system PS at the exposure slit.

Description

200846832 IX. Description of the invention: [Technical field to which the invention pertains] :: The invention relates to a lithography apparatus and a component manufacturing phantom apparatus comprising: an illumination system 'which is configured to adjust a radiation beam; a support member Constructed with an old sound, a ampere, and a forked pattern, the patterned element is sufficient to impart a pattern to the rib section of the beam of the ray 1 to form a radiation beam that is polarized; and A substrate table constructed to hold a substrate. [Prior Art] A lithography apparatus is a machine that applies a cake and a pattern to a substrate (usually on a target area of an earth plate). , a micro for manufacturing integrated circuits (IC). When the #心袋 is placed (), in a far-reaching situation, a patterned element (which is referred to as a stencil on the reticle) can be used to create an individual layer pattern to be formed on the IC. This pattern can be transferred to a target area (e.g., a portion containing a + 匕 3 or right dry dies) on a substrate (e.g., a germanium wafer). The pattern in the slit, usually through a projection system, is imaged onto the layer of ":: the projection system will be - optically narrow". Generally; = light-sensitive material on the board _ ° The early substrate will contain the network that is continuously patterned to dry the adjacent target area. It is known that the shadowing device includes so-called stepping, which radiates each _ standard area by exposing the entire image to the target area, and the so-called scanning crying, ^. The middle hunter radiates each target area by scanning the substrate synchronously or in parallel with this direction in a given direction ("scanning" side 田 field ~ beam sweeping illustration. Ϊ21260.doc 200846832 For this purpose, it is possible to project a pattern with a smaller feature size, advantageously using a vehicle with a small wavelength of radiation. For example, we can use far-ultraviolet radiation with a wavelength of about η _ instead of a wavelength of about 193 nm, 248 _ or 365 (10). It has a small feature to project projections. It can project a projection system with a wavelength of 13 _. It needs to have reflective optical components (such as reflective multilayer mirrors) and should be provided in a vacuum environment. In terms of the projection system, the projection system will have a photonic port IM, which is provided as a Φ I light slit at a focal plane on the target area of the substrate, which limits the space available around the exposure slit. For t to be the substrate The surface may be placed in the focus of the feeding system, and the in-plane (four) flat system may be whiskered. There may not be enough space under the projection system to locate the height of the substrate below the projection slit for measuring the substrate below the projection system. Leveling system. SUMMARY OF THE INVENTION [0002] There is a need to provide a lithographic projection apparatus having a leveling system and a projection system configured to project a patterned light beam onto a _ county board - In the _exposure slit at the focal plane on the target zone. According to the invention, the invention provides a lithographic apparatus comprising: / an illumination system configured to adjust a radiation beam, a support member configured to support a patterned element, the patterned element capable of imparting a pattern to the cross section of the radiation beam to form a patterned radiation beam; and a substrate stage configured to hold a substrate; ―Projection system '1, the configuration of the radiation beam projected to 121260.doc 200846832 in an exposure slit at the focal plane on one of the substrate areas, wherein the projection system has one An optical component proximate the exposure slit, and the piercing further includes a leveling system for measuring a height of the substrate at a position from the exposure slit, and a controller Controlling a position of the substrate stage such that the substrate is at the exposure slit in the focal plane of the projection system. The substrate is used to measure the height of the substrate at a position from the exposure slit a leveling system that creates a space to move the optical component very close to the exposure slit. One advantage of designing the projection system to be in close proximity to the exposure slit is if the projection system is close to the substrate Positioning the exposure slit protects the optical components of the projection system from the need for a very small opening in the housing that is necessary to be protected from contamination by the exhaust of the anti-money agent on the substrate. The beam from the projection system is condensed and has a minimum dimension at the exposure slit at a focal plane on a target area of the substrate, the closer the opening in the housing is to the exposure slit, the The opening can be made smaller and as a result, less contamination can pass through the opening to contaminate the optical component. According to another aspect of the present invention, a method of fabricating a component includes: projecting a patterned radiation beam by a projection system onto an exposure slit at a focal plane of a target region of a substrate, wherein The projection system has an optical component proximate to the exposure slit, and the apparatus further includes a leveling system for measuring a height of the substrate at a position from the exposure slit, and a control The controller is configured to control a position of the substrate table such that the substrate is at the exposure slit in the focal plane 121260.doc 200846832 of the projection system. [Embodiment] Figure 1 is not tolerantly depicting a lithography apparatus according to an embodiment of the present invention. The apparatus includes a radiation system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or far ultraviolet radiation).

.'°, ,,. a structure (eg, a light cover) Μτ, which is constructed to support a pattern 2 element (eg, a 'mask') and connected to the first locator to read, the locator m is configured to The parameters accurately position the patterned element - a substrate stage (eg, a 'wafer stage') WT that is configured to hold a substrate 'coated with an anti-wafer' w and connected to a second positioner pw, § hai The second positioner PW is configured to accurately position the substrate according to certain parameters; and _ - = m (eg, 'refracting projection lens system) ps, which is configured to == element MA to light beam B The pattern is projected onto a substrate w wc (eg, 'comprising—or multiple dies). The illumination system can include various types of optical components such as 'refracting components, reflective components, magnetic 'magnetic components, electrostatic έ and # or pots a ^ , , for electrical conduction, for shaping, shaping, or controlling radiation. An optical component of the type, or any group thereof, or a patterned component, that is, a heavy-duty structure that is subjected to a patterned component holds the patterned element in a manner. The orientation of the component, the orientation of the lithography device & The view of the singular leaves and other conditions (for example, I2I260.doc •10-200846832 components are not held in a vacuum ring.). The truss structure can hold the patterned components using mechanical vacuum, static or other clamping techniques. The support structure can be, for example, a frame or table that can be fixed or movable as desired. The support structure ensures that the patterned element is, for example, at a desired position relative to the projection system. Any use of the term "main reticle" or "reticle" herein may be considered synonymous with the more general term η patterned element. The term "patterning element" as used herein is to be interpreted as meaning any element that can impart a pattern to the cross section of the radiation beam such that a pattern is formed in the target region of the substrate. The pattern of the beam may not correspond exactly to the desired pattern in the target area of the substrate, for example, the 3' right pattern includes a phase shifting feature or a so-called auxiliary feature. Typically, the pattern imparted to the radiation beam will correspond to a positive The specific functional layer formed in the target area such as the integrated circuit. The chemical element can be transmissive or reflective. The example component of the patterned component (4) mask, the programmable mirror array and the programmable Lc micro It is well known in the film, and the board is covered with attenuated phase shift, alternating phase shifting, nine-jaw type and various types of hybrid hoods. One example of a Mirrorable Array is in Small " y 'The matrix of the brothers face, these mirrors can be individually tilted to reflect the incident light beam in different directions. 5 Hai 4 slanted mirror beam Bu 驮 驮 驮 驮 由 由 由 由 由 由 由The terminology, projection system 纮^^^^^^, is widely interpreted to cover any type of projection system that is suitable for the exposure radiation used or other use, such as the use of impregnation liquids or the use of artificial liquids. ^ Included refractive system, reflection system 12126Q.doc 200846832 :: Wide system, magnetic system, electromagnetic system and electrostatic optical system can be regarded as a more compact, suitable. Any use of the term "projection lens" in this article is "more general" The term "projection system," synonymous. As described herein, the 兮 兮 ) ^ ^ is broken into a reflection type (for example, using reflected light & In the space between two t:. The impregnation liquid can also be applied to the lithography: other spaces in the middle. For example, the space between the reticle and the projection system is well known in the art. Increasing the numerical aperture of the projection system. As used herein, the term, impregnation, does not mean-structure (such as having to be immersed in a liquid) and only means that the liquid between exposures is between the projection system and the substrate.

The illuminating IUL receives the radiation beam from the radiation source (10). For example, when the source of radiation is a quasi-molecular laser, the source of radiation and the lithography device can be separate entities. In this case, the radiation source is not considered to form part of the lithography and the light beam is transmitted from the radiation source by means of a beam delivery system BD comprising, for example, a suitable mirror and/or beam amplifier. Illuminator 1 In other situations, for example, when the source of radiation is a mercury lamp, the source of radiation may be a bulk portion of the lithography apparatus. Radiation source anode and illuminator IL (and optionally beam delivery system BD) may be referred to as a radiation system. Illuminator IL may include an adjuster AD for adjusting the angular intensity distribution of the light beam. Generally, at least the outer and/or inner radial extent of the intensity distribution in the pupil plane of the illuminator can be adjusted (usually referred to as the lamp exterior and 121260.doc -12-200846832 respectively:: in addition, the illuminator can contain Various other components, such as a thermal state IN and a concentrator c. The illuminator can be used to adjust the radiation beam such that it has the desired uniformity and intensity distribution in the cross section of the radiation beam.

The radiation beam B is incident on a patterning element (e.g., reticle MA) that is held on a support structure (e.g., reticle stage. τ) and the radiation beam Β is patterned by the patterning element. After traversing the reticle, the light beam Β is focused by focusing the beam onto the target area of the substrate. Projection system on ps. By means of the second positioner PW and the position sensor 乂, for example, an interferometric 7G piece, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved, for example to position different target zones to radiation In the path of beam B. Similarly, for example, after mechanically taking it from the mask library or during scanning, the first positioner PM and the other position sensor ifi can be used to accurately position the mask "with respect to the path of the radiation beam B." In other words, the movement of the mask stage μ τ can be realized by means of a long stroke module (coarse positioning) and a short stroke module (fine positioning) forming part of the first positioner PM. Similarly, the formation can be used. The long stroke module and the short stroke module of the second positioner pw realize the movement of the substrate sWT. In the case of using the stepper (as opposed to the scanner), the mask table MT can be connected only to the short stroke actuator Or may be fixed. The reticle alignment marks M1, %2 and the substrate alignment marks PI, P2 may be used to align the reticle MA and the substrate w. Although the substrate alignment marks occupy a dedicated target area as illustrated, Can be located in the space between the target zones (the markers are known as the scuttle alignment marks (scdbe seven (10) alignment mark). Similarly, when provided on the mask, there is one with 121260.doc -13- 200846832 Upper grain m under 'mask index mark ^Between the dies. The device described can be used in at least one of the following modes: = In the step mode, when the entire pattern of the light beam will be given - the sub-area 'C on the day' The mask stage and the substrate stage WT remain substantially stationary (i.e., single 呤 every <,, early and long exposure). Then, in the direction of and/or the 丫 direction, the substrate is displaced. WT, so that the exposure can be different Target area c. The maximum size of exposure % in step mode limits the size of the target area C imaged in a single static exposure. 2$ In scan mode, when the pattern imparted to the light beam is projected to - Simultaneously broadcast yj $ / Zhifu first hood MT and substrate taiji in the display area C (that is, the single-action η can be enlarged by the technical system Ps (10) small) and the image reversal characteristics are confirmed. Speed and direction of the mask table MT. In the scan mode L, the maximum size of the exposure field is limited to the target area of the single dynamic exposure (in the (four) drawing direction), and the scanning motion, the length determines the target area Degree (in the scanning direction) 0 3. In another nucleus, the hood H1 surname female ^ y to hold The halo of a programmable patterning element remains substantially stationary, and when the pattern imparted to the radiation beam is applied to the region C, the substrate table WT is moved or scanned. In this mode 2, a pulsed radiation source is typically employed, and It is necessary to update the programmable patterning element between each of the substrate stages π or between consecutive light shot pulses during the scanning period. The singularity can be easily applied to the use of programmable patterning elements. (such as a styling mirror array of the above-mentioned programmable mirror array). Also, & use the combination and / or change of the above modes of use, body or completely different 121260. Doc 14 200846832 Usage mode. Figure 2 depicts a projection system of Figure i partially showing the last two optical components of the projection system PS (gamma, thousand, for example, the last multilayer mirror 5, 6) in accordance with one embodiment of the present invention. Ps. The beam B reflected by the projection system d and only the other optical components (not shown) of the cymbal PS_ will be focused by the reflection of the manhole layer 5, 6 through the opening 7 in the casing CO to the substrate trade... At the exposure slit at ten sides, the substrate w is held by the substrate and will move along the pedestal Bp.

The bit device (PW in Figure i) can be used to position the substrate below the projection system PS with six degrees of freedom. The leveling system 1G is used to measure the substrate-to-position height of the exposure slits and a controller (not shown) is coupled to the leveling system and the second positioner to place the surface of the substrate w in the projection system At the exposure slit in the focal plane. The distance between the projection system Ps and the substrate w may be less than 5 cm, or even less than i em, preferably less than 5 faces. The result is in the light winter. The distance between the jaw and the exposure slit at the focal plane on the substrate is less than 5 cm, preferably less than 1 cm. The distance between the leveling system and the exposure slit can be less than 20 cm, preferably less than 1 〇 cm. Figure 3 depicts a cross-sectional view along line A of Figure 2, A-, 'A. The details of the projection system are omitted. Figure 3 shows the Degree® system for measuring the position of the substrate table in the 2 directions. In this case, the two interferometer beams ZIF are directed to the direction of the 45 degree mirror 31 'the 45 degrees The mirror reflects the interferometer beam toward the direction of the mirror 34 and the mirror 35 mounted on the metric frame MF and providing a good reference in the Z direction. The remainder of the metrology system is not depicted in Figure 3, which causes the substrate table WT to The positioning of degrees of freedom (X, Y, Z, RX, RY, and RZ) is possible. More information about this metric system can be used in the display of five degrees of 12126Q.doc -15-200846832 degrees of freedom. The information of the interferometer system of the measured interferometer system is the same as that of the interferometer system of Fig. 3. In the case of the interferometer system of Fig. 3, the +6 degrees of freedom are found in the ... for the measurement - to make the interference of the ^^ interferometer. A pong-in encoder can be used in the metrology system to measure the position of the substrate trader ^ ^ Η ΛΛ ^. Information on the use of incremental coding benefits can be found in US 7, 〇 2, 729. Figure 4 depicts along Figure 2. In the continuation of ^ ^, the rank section diagram: Figure: 4 more detailed exhibition + system 10. The substrate 10 for measuring the position of the slit is a narrow exposure = the system 10 includes a guide beam for guiding the surface of the substrate and a reflection for the surface of the substrate to determine the position of the surface of the substrate. During the interim period, the sore's is again used to position the WT with six degrees of freedom to make the height of the substrate w-(iv). According to the invention, there are two kinds of lithography devices. Mode. The first mode is to perform leveling' while operating the projection system ps to expose the substrate: part of the substrate. Another mode is to first perform two flats under the leveling system and then when the height of the substrate is completed When using the leveling information to pattern the substrate under the projection system, the lithography device can have two (dual platforms) or two or more substrate stages (and / or two or more comets a, especially a lithography device of the type of Dr.. In such "multi-platform" machines, additional stations may be used in parallel, or preparatory steps may be performed on one or more stations' while one or more other stations are used Exposure. A dual-platform lithography apparatus includes two substrate stages that can be swapped between a measurement position below the leveling system and a technique-to-position below the leveling system, and the controller is constructed and configured to be at the projection position The measurement information obtained below the measurement position is used to place the substrate at the exposure slit in the focal plane. Again, excellent 12I260.doc •16- 200846832 “The space required to level the system is not required under the projection system, and the projection system 2 is mounted very close to the substrate to allow space between the optical components and the exposure slit. Dual platform lithography The other advantage of the skirt is that it can be used in a unique way to allow the use of micro-clothes more economically. The information about the dual-platform lithography device can be found in 〇ρ 1〇37117 (which is cited by reference). The manner is found in this document. Although the specific reference micro-fissure can be used in the manufacture of buckles, the lithography apparatus described herein can have other applications, such as For the guidance of magnetic domain memory and (4) pattern, Thousand-plate display device, night crystal display (LCD), thin film magnetic head, etc. This technique is used in this special case. Any use of the term 之 or 曰曰 可 可 可 可 可 可 可 可 可 可 可 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 : : : : : : : : : : : : : : : : : : : : The hanging layer is applied to the substrate and the exposed anti-money agent is applied ',) degrees of tools and / or inspection tools to deal with the substrate referred to in this article. When applicable, too eternal according to -1 @ m can not be applied to this and other substrate processing can be carried out on the substrate - more than The term "substrate" as used in the context of the invention may also refer to a substrate that already contains a plurality of processed layers. The terms ", radiation" and "beam" as used herein encompass all types. Electromagnetic firing 'includes ultraviolet (UV) radiation (eg, wavelengths at or about 365 ·, 248 with, 193 fine, 157 or 126 nm) and far ultraviolet () light shots (eg 'wavelength at 5 coffee to 2 In the range of 〇 ) 以及 以及 以及 粒子 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 121 若 若 若 若 若 若 若 若 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语 术语Or a combination, a 栝 refractive component, a reflective component, a magnetic component, an electromagnetic component, and an electrostatic optical component.

The above description is I. human, illustrative and not limiting. Thus, it will be readily appreciated that the invention may be modified as described herein without departing from the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 depicts a lithography apparatus according to an embodiment of the present invention; FIG. 2 depicts a cross-sectional view of a projection system, a leveling system, and a wafer stage of a lithography apparatus according to the present invention;

3 is a cross-sectional view taken along the line of FIG. 2, Α-, and α; and FIG. 4 is a cross-sectional view taken along line 图 of FIG. [Main component symbol description] 5 Reflective multilayer 6 Reflective multilayer 7 Opening 10 Leveling system 11 Light source 12 Detector 31 Mirror 34 Mirror 35 Mirror Β Beam ΒΡ Base 121260.doc -18 - 200846832 Housing position sensor position sensor illumination Marker

Patterned component metric frame support structure mark mark

Co IFl IF2 IL Ml M2 MA MF MT PI P2 PM PS PW SO w WT

Z First Positioner Projection System Second Positioner Fortunately, the source substrate, substrate table, direction, ZIF interferometer beam, 121260.doc -19-

Claims (1)

200846832 X. Patent application garden: 1· A lithography device comprising: an illumination system configured to adjust a radiation beam; a support member configured to support a patterned element, the patterned 70 pieces Forming a cross section of the pure beam to form a patterned radiation beam; Ί a substrate stage configured to hold a substrate; a projection system configured to project the patterned radiation beam into an exposure slit on a focal plane on a target region of the substrate, wherein the projection system has - close to the exposure slit An optical component, and (d) step-in-step includes a leveling system for measuring a height of the substrate at a location from the exposure slit and controlling it to control the substrate stage - Positioned such that the substrate is at the exposure slit in the focal plane of the projection system. 2. A lithography apparatus as claimed in claim 1, wherein the apparatus comprises a metrology system for measuring the position of the substrate table in the Z direction. 3. The lithography apparatus of claim 2, wherein the metrology system comprises an interferometer that measures the position of one of the mirrors on the substrate table in the two directions. 4. The lithography apparatus of claim 1, wherein the optical component is a reflective optical component. 5. The lithography apparatus of claim 1, wherein the projection system is provided with a housing for protecting the optical components from contamination that may be from the substrate. The housing has an opening, the patterned beam The opening may be passed through the opening to form the exposure slit on the substrate. 121260.doc 200846832 6' = lithography apparatus of claim 1, wherein the distance between the feed system and the & face of the substrate is less than 5 cm. 7: A lithography apparatus of the claw item 5, wherein a distance between the projection system and a clothing surface of the substrate is less than 1 cm. 8' The lithography apparatus of claim 6, wherein the distance between the projection system and the substrate, the κ surface is less than 5 mm 〇 9.2. The lithographic apparatus of claim 2 / wherein the apparatus comprises A six-axis • volume system for measuring the position of the substrate table in six free metrics. The lithography apparatus of claim 1 wherein the leveling system includes a light source that directs a detection beam to the surface of the substrate, and a means for detecting a reflection of the surface to determine the position of the substrate Detector. 11. The lithography apparatus of claim 1, wherein the distance between the optical component and the exposure slit at the focal plane on the substrate is less than 5 em. 12·If requested! A lithography apparatus wherein a distance between the optical component and the exposure slit at the focal plane on the substrate is less than one. #13. The lithography apparatus of claim 1, wherein the leveling sensor is less than 2 〇 cm from the exposure slit at the focal plane on the substrate. 14. The lithographic apparatus of claim 1, wherein the leveling system is less than 10 cm from the exposure slot at the 5th focal plane of the substrate. [15] The lithographic projection apparatus of claim 1, wherein the apparatus comprises two substrate stages exchangeable between a measurement position below the leveling system and a projection position below the projection system, and the control The device is constructed and arranged to use the measurement information obtained below the measurement location at the projection location such that the substrate is at the exposure slit in the focal plane. 121260.doc 200846832 A method of fabricating a component, comprising: projecting a patterned radiation beam by a projection system onto an exposure slit at a focal plane of a target region of a substrate, wherein the projection system has a proximity The light of the exposure slit 4* device and the device further includes a leveling system for measuring the height of the substrate at a position from the exposure slit, and a controller, A controller is operative to control a position of the substrate table such that the substrate is at the exposure narrow in the focal plane of the projection system. 121260.doc