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TW200846825A - Photosensitive resin composition and layered product - Google Patents

Photosensitive resin composition and layered product Download PDF

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Publication number
TW200846825A
TW200846825A TW97103548A TW97103548A TW200846825A TW 200846825 A TW200846825 A TW 200846825A TW 97103548 A TW97103548 A TW 97103548A TW 97103548 A TW97103548 A TW 97103548A TW 200846825 A TW200846825 A TW 200846825A
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Taiwan
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photosensitive resin
substrate
resin composition
mass
group
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TW97103548A
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Chinese (zh)
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TWI356972B (en
Inventor
Yukari Himeda
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Asahi Kasei Emd Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

A photosensitive resin composition which has resistance to alkaline noble-metal cyanide plating baths, is excellent in resolution, adhesion, and resist strippability, and can be developed with an alkaline aqueous solution; and a layered photosensitive-resin product including the photosensitive resin composition. The photosensitive resin composition is characterized by comprising 20-90 mass% carboxylated binder (a), 5-75 mass% addition-polymerizable monomer (b) having at least one ethylenically unsaturated terminal group, and 0.01-30 mass% photopolymerization initiator (c). It is further characterized in that as the addition-polymerizable monomer (b) having at least one ethylenically unsaturated terminal group, a specific compound is contained in an amount of 1-50 mass% based on the whole photosensitive resin composition.

Description

200846825 九、發明說明: 【發明所屬之技術領域】 本發明係關於-種能夠利用驗性水溶液進行顯影之感光 性樹脂組合物、將該感光性樹脂組合物 、 奶積層於支持體上之 感光性樹脂積層體、使用該感光性樹 J伽積層體於基板上形 成光阻圖案之方法、及該光阻圖案之 木心用途。更詳細地,本 發明係關於一種向印刷電路板之製造、 f 衣、可撓性印刷電路板 之製造、:reintegrated Circuit,積體電路)晶片搭载用導線 架(以下稱為「導線架」)之製造、全屬 ^ 孟屬掩板製造等之金屬 箱精密加工、BGA(Ball Grid Array,球狀柵格陣列)及Up (Chip Size Package,晶片尺寸%f 驻、牮 a “ ▲ 了|衣)4之半導體封裝體製 造、TAB(Tape Automated B〇nding,捲帶式自動接合)及 CO聊ip 0n Film,薄膜覆晶封裝:將半導體哪載於薄 臈狀之微細電路板上者)為代表之捲帶式基板之製造、半 導體凸塊之製造、平板顯示器領域之ITO(Indium Tin es氧化銦錫)電極、定址電極或者電磁波遮罩等部件 之製造提供合適的絲㈣之感紐樹脂組合物。 【先前技術】 先月〕ep刷電路板係藉由光微影法而製造。所謂光微影 法係指如下方法:將感光性樹脂組合物塗佈於基板上,進 行圖案曝光以使該感光性樹脂組合物的曝光部產生聚合硬 以顯影液去除未曝光部而於基板上形成光阻圖案,實 施钮刻或電鐘處理以形成導體圖案,然後自該基板上剝離 去除該光阻圖f ’藉此於基板上形成導體圖案。 128769.doc 200846825 ^ 料巾,在㈣絲樹频合物塗佈於基板 :’知用如下方法中之任一種:將感光性樹腊組合物溶 液塗佈於基板上並崎㈣之方法;或者隸序積層有支 持體、由感光性樹脂組合物所構成的層(以下稱為「感光 性樹脂層」)、及視需要積層有保護層的感光性樹脂積層 體(以下稱為「乾膜光阻」)積層於基板上之方法ip 於印刷電路板之製造中’多使用後者之乾膜光阻。[Technical Field] The present invention relates to a photosensitive resin composition which can be developed by using an aqueous solution, and a photosensitive resin composition and a photosensitive layer of a milk on a support. A resin laminate, a method of forming a photoresist pattern on a substrate using the photosensitive tree J-composite layer, and a use of the photoresist pattern. More specifically, the present invention relates to a lead frame for wafer mounting (hereinafter referred to as "lead frame") for manufacturing a printed circuit board, manufacturing a f-shirt, or a printed circuit board, and reintegrated circuit (integrated circuit). Manufacturing, all of them are metal box precision machining, BGA (Ball Grid Array) and Up (Chip Size Package), wafer size %f station, 牮a “ ▲ 4) semiconductor package manufacturing, TAB (Tape Automated B〇nding) and CO chat ip 0n Film, film flip chip package: where the semiconductor is mounted on a thin micro-board Manufacture of representative tape-and-reel substrate, manufacture of semiconductor bumps, manufacture of ITO (Indium Tines Indium Tin) electrodes, address electrodes or electromagnetic wave masks in the field of flat panel displays, etc. [Prior Art] The epoch circuit board is manufactured by photolithography. The photolithography method refers to a method in which a photosensitive resin composition is applied onto a substrate to perform patterning. Exposing to cause polymerization of the exposed portion of the photosensitive resin composition to remove the unexposed portion by the developer to form a photoresist pattern on the substrate, performing button etching or electric clock processing to form a conductor pattern, and then peeling off the substrate The photoresist pattern f' is used to form a conductor pattern on the substrate. 128769.doc 200846825 ^ The towel is coated on the substrate in the (four) silk tree frequency compound: ' Know any of the following methods: Photosensitive tree wax a method in which a composition solution is applied to a substrate (4), or a support layer, a layer composed of a photosensitive resin composition (hereinafter referred to as a "photosensitive resin layer"), and a layered protective layer as needed The method of laminating a layer of a photosensitive resin laminate (hereinafter referred to as "dry film photoresist") on a substrate ip uses the latter dry film photoresist in the manufacture of a printed circuit board.

以下’就使用上述乾膜光阻而製造印刷電路板之方法加 以簡單說明。 首先,於乾膜光阻具有聚乙婦薄膜等保護層《情形時, 將該保護層自感光性樹脂層上剝離。繼而,使用積層機, 於銅落積層板等基板上以該基板、感光性樹脂層、支持體 之順序而積層感光性樹脂層及支持體。繼而,以具有佈線 圖案之光罩為介隔,以超高屡水銀燈所發出之i線(365 nm) 等紫外線對該感光性樹脂層進行曝光,藉此使曝光部分產 生聚合硬化。繼而,將由聚對苯二甲酸乙二酯等構成之支 持體剝離。繼而,利用具有弱鹼性的水溶液等顯影液將感 光性樹脂層之未曝光部分加以溶解或分散去除,而於基板 上形成光阻圖案。繼而,將所形成之光阻圖案作為保護遮 罩,進行公知之蝕刻處理、或圖案電鍍處理。圖案電鍍處 理中通常使用酸性之銅電鍍浴。最後,將該光阻圖案自基 板上剝離,而製造具有導體圖案之基板、亦即印刷電路 板0 近年來,電子零件中多使用電鍍技術。其原因在於,電 128769.doc 200846825 印刷電路板、嶋板等此種非導電性材質賦 Π:可賦予如下之新特性:可具有接合性、焊接 利於接合之功能,可具有敎之接觸電阻值等。 對於電㈣素材,正在開發具有多種㈣之各㈣ 例如有金、銀、銅、钮、 該等金屬之合金電^ f 11及 讀4尤其於電子零件中,採用耐録 4異、由於經時變化所造成的接觸電阻值變化較低、且接 σ ί •生k異之金電鍍’又’採用雖然比金更易被氧化但 之銀電鍍等。金電錢、銀電鑛中分別有氮性浴(驗性浴、、 生冷)、非氰性浴等,根據被膜之要求特性來 選擇電鍍浴。 士尤其於打線接合之用途之情形時,需要軟質之被膜,此 枯選擇中性〜鹼性之氰化貴金屬電鍍浴。 另者面,乾膜光阻經圖案化及電鍍步驟之後,包括將 其剝離步驟。該剝離步驟中多使用鹼性水溶液。其原因在 於’光阻巾之含緩絲合劑轉於驗性水溶液。 於使用中性〜驗性浴之電鑛步驟中,於進行使用光阻之 圖案化之情形時,易產生如下現象:含有原本由於驗性而 溶解的含絲黏合劑之光阻材料會由於鹼而溶解,導致電 鍍時電鍍液自基材與光阻材料的間隙中滲入,或者光阻材 料被剝離而無法進行正常的圖案化。另一者面,為了提高 耐電鑛性而過分地降低驗溶解性,因而於剝離步驟中易2 生無法自基板上剝離光阻材料之問題。 根據如上理由,業者期望開發出—種可耐中性〜鹼性的 128769.doc 200846825 氰化貴金屬電鍍浴、電鍍浴的污染性優異、解析度及密著 性優異、且光阻材料剝離性優異之感光性樹脂組合物。Hereinafter, a method of manufacturing a printed circuit board using the above dry film photoresist will be briefly described. First, in the case where the dry film photoresist has a protective layer such as a polyethylene film, the protective layer is peeled off from the photosensitive resin layer. Then, a photosensitive resin layer and a support are laminated on the substrate such as a copper back laminate in the order of the substrate, the photosensitive resin layer, and the support by using a laminator. Then, the photosensitive resin layer is exposed by ultraviolet rays such as i-line (365 nm) emitted from a super-high mercury lamp in a mask having a wiring pattern, whereby the exposed portion is subjected to polymerization hardening. Then, the support composed of polyethylene terephthalate or the like is peeled off. Then, the unexposed portion of the photosensitive resin layer is dissolved or dispersed by a developing solution such as a weakly alkaline aqueous solution to form a photoresist pattern on the substrate. Then, the formed photoresist pattern is used as a protective mask, and a known etching treatment or pattern plating treatment is performed. Acidic copper plating baths are commonly used in pattern plating processes. Finally, the resist pattern is peeled off from the substrate to produce a substrate having a conductor pattern, i.e., a printed circuit board. In recent years, electroplating techniques have been frequently used in electronic parts. The reason is that the non-conductive material such as printed circuit board and enamel plate can be given the following new characteristics: it can have the function of bonding, welding and bonding, and can have the contact resistance value of 敎Wait. For electric (four) materials, various (4) materials are being developed. For example, there are gold, silver, copper, buttons, alloys of these metals, etc., and reading 4, especially in electronic parts. The change in contact resistance caused by the change is low, and the σ ί 生 之 之 之 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金 金There are nitrogen baths (test baths, cold baths) and non-cyanide baths in Jindian money and silver mines, respectively. The plating bath is selected according to the required characteristics of the film. In particular, in the case of wire bonding applications, a soft film is required, and a neutral to alkaline cyanide precious metal plating bath is selected. Alternatively, the dry film photoresist is subjected to a patterning and plating step, including a stripping step. An alkaline aqueous solution is often used in the stripping step. The reason for this is that the retardant mixture containing the photoresist is transferred to an aqueous solution. In the case of using a neutral to test bath, in the case of patterning using a photoresist, it is easy to produce a phenomenon in which a photoresist containing a silk-containing binder which is originally dissolved due to the testability is caused by a base. When dissolved, the plating solution penetrates from the gap between the substrate and the photoresist material during plating, or the photoresist material is peeled off and normal patterning cannot be performed. On the other hand, in order to improve the resistance to electric ore, the solubility is excessively lowered, so that the problem of peeling off the photoresist from the substrate is liable to occur in the peeling step. For the above reasons, the company hopes to develop a medium-to-neutral-basic 128769.doc 200846825 cyanide precious metal plating bath and electroplating bath, which is excellent in contamination, excellent in resolution and adhesion, and excellent in removability of photoresist. A photosensitive resin composition.

再者’關於光阻材料之耐電鐘性,於專利文獻1中,就 含有曱基丙烯酸/甲基丙烯酸乙酯/苯乙烯之三元共聚物、 雙酴A系(曱基)丙烯酸酯化合物、具有胺基甲酸酯鍵之甲 基丙烯酸酯化合物、2,2,-雙(2,3-二氯苯基)-4,4,,5,5,-四苯 基-1,2’-雙咪唑之感光性樹脂組合物之解析度、密著性、 敏感度、電鍍浴污染性、顯影性、機械強度進行了說明, 但並未言及具有對中性〜鹼性的氰化貴金屬電鍍浴之耐 性’對剝離性亦並無任何說明。 [專利文獻1]曰本專利特開2〇〇1_2221〇6號公報 【發明内容】 [發明所欲解決之問題] 本!X明之目的在於提供_種可耐中性〜驗性氰浴中的貴 金屬電鍍且解析度、密著性、光阻材料剝離性優異之感光 樹月曰組合物’使用該感光性樹脂組合物之感光性樹脂積 層體’使用該感光性樹脂積層體於基板上形成光阻圖案之 方法,及該光阻圖案之用途。 [解決問題之手段] 上述目的可藉由本發明之以下構成而達成。 光性樹脂組合物,其特徵在於:其係含有⑷含 羧基黏合劑·· 20〜9〇質量% ^ 、 。、(b)含有至少一個末端乙烯性 不飽和基之加成聚合性 劑:_。質量%者;:!質量%、⑷光聚合起始 感光性樹脂組合物整體中含有1〜50 128769.doc 200846825 質量%之選自由以下述通式⑴及通式(Π)所表示之化合物 所組成群中的至少一種化合物,作為(b)含有至少一個末端 乙烯性不飽和基之加成聚合性單體。 [化1] CH2—0—C—c—ch2 π 丨0扒 N C-0-—(A-0)nr(B-0)nr~CH—CH2—〇—C—C—cu / II !Γ R1\ OR3 (I) N C—〇—(A-0)n3-(B-0)n4-CH—CH^—O一C—C—ru I II I! I ~Further, in the case of the electric resistance of the photoresist material, Patent Document 1 contains a terpolymer of methacrylic acid/ethyl methacrylate/styrene, a bismuth A-based (fluorenyl) acrylate compound, a methacrylate compound having a urethane bond, 2,2,-bis(2,3-dichlorophenyl)-4,4,5,5,-tetraphenyl-1,2'- The resolution, adhesion, sensitivity, plating bath contamination, developability, and mechanical strength of the photosensitive resin composition of diimidazole have been described, but there is no mention of a neutral-alkaline cyanide precious metal plating bath. The tolerance 'has no explanation for the peelability. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. 21-2221 No. 6 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] This is! The purpose of the present invention is to provide a photosensitive resin composition which is excellent in resolution, adhesion, and photoresist releasability in a neutral metal-reactive cyanide bath. Photosensitive Resin Laminate A method of forming a photoresist pattern on a substrate using the photosensitive resin laminate, and use of the photoresist pattern. [Means for Solving the Problem] The above object can be attained by the following constitution of the present invention. The photo-resin composition is characterized in that it contains (4) a carboxyl group-containing binder 20 to 9 〇 mass% ^. And (b) an addition polymerizable agent containing at least one terminal ethylenically unsaturated group: _. % of quality;:! (%) The photopolymerization-initiated photosensitive resin composition contains at least one selected from the group consisting of compounds represented by the following general formula (1) and the general formula (Π), and contains 1 to 50 128769.doc 200846825 mass%. The compound is (b) an addition polymerizable monomer containing at least one terminal ethylenically unsaturated group. [Chemical 1] CH2—0—C—c—ch2 π 丨0扒N C-0-—(A-0)nr(B-0)nr~CH—CH2—〇—C—C—cu / II ! Γ R1\ OR3 (I) NC—〇—(A-0)n3-(B-0)n4-CH—CH^—O—C—C—ru I II I! I ~

H〇 l{心 0^2—〇—* II u 2 0 R5 (其中’ R1為碳數4〜12之直鏈、支鏈或環狀之燒基、或 者碳數6〜12之烷基芳基,R2〜R5分別獨立為氫或甲基,a為 C2H4,B為CH2CH(CH3),分別獨立為〇〜15之整數,⑴ + ιΐ2+η3+η4 為 2 以上。 -(A-Ο)-及-(B-Ο)-之重複單元之排列,可為無規排列亦 可為嵌段排列。於嵌段排列之情形時,_(八-〇)_及_(B_〇)_ 之順序,任一者均可在胺基甲酸酯鍵側。) [化2] CHo OH II I -C-N- -Re- HO 1 II -N-C-0—{A〇)nHB-0)n9- °ΤΓΗ2 (A*0)nr(B*°)n6 ~CH~CH2~〇—q—q— II I~CH2 0 R9 R7H〇—ch〜ch2—0—c—c_ 〇 H HO II I ~H〇l{心0^2—〇—* II u 2 0 R5 (where ' R1 is a linear, branched or cyclic alkyl group having a carbon number of 4 to 12, or an alkyl group having a carbon number of 6 to 12 The bases, R2 to R5 are each independently hydrogen or methyl, a is C2H4, B is CH2CH(CH3), and each is independently an integer of 〇15, and (1) + ιΐ2+η3+η4 is 2 or more. -(A-Ο) The arrangement of the repeating units of - and - (B-Ο)- may be a random arrangement or a block arrangement. In the case of block arrangement, _(八-〇)_ and _(B_〇)_ Any order can be on the urethane bond side.) [Chemical 2] CHo OH II I -CN- -Re- HO 1 II -NC-0-{A〇)nHB-0)n9- °ΤΓΗ2 (A*0)nr(B*°)n6 ~CH~CH2~〇—q—q— II I~CH2 0 R9 R7H〇—ch~ch2—0—c—c_ 〇H HO II I ~

(ID CHg—Q—(ID CHg—Q—

« R to (其中,R6及R7分別獨立為碳數4〜12之直鏈、支鏈或環 128769.doc -9- 200846825 狀之烧基、或者碳數6〜12之烧基芳基,R8〜R11分別獨立為 氫或曱基,A為C2H4,B為CH2CH(CH3),115及1!6為0〜15之 整數,115+116為1以上。n7〜n1()分別獨立為〇〜15之整數,n7 + η8+η9+ηι〇 為 2 以上。 •(A-Ο)-及-(B-Ο)-之重複單元之排列,可為無規排列亦 可為嵌段排列。於嵌段排列之情形時,-(冬〇)_及_(Β_〇)_ 之順序,任一者均可在胺基甲酸酯鍵侧。) 2 ·如弟1項之感光性樹脂組合物,其中進一步含有以下 述通式(III)表示之化合物,作為上述(b)含有至少一個末端 乙烯性不飽和基之加成聚合性單體。 [化3] Η 0« R to (wherein R6 and R7 are each independently a linear, branched or cyclic group having a carbon number of 4 to 12, 128769.doc -9-200846825, or a aryl group having a carbon number of 6 to 12, R8 ~R11 is independently hydrogen or sulfhydryl, A is C2H4, B is CH2CH(CH3), 115 and 1!6 are integers from 0 to 15, and 115+116 is 1 or more. n7~n1() are independently 〇~ An integer of 15, n7 + η8 + η9 + ηι〇 is 2 or more. • The arrangement of the repeating units of (A-Ο)- and -(B-Ο)- may be a random arrangement or a block arrangement. In the case of block arrangement, either -(冬〇)_ and _(Β_〇)_ may be in the urethane bond side.) 2 ·The photosensitive resin combination of the first item Further, the compound further contains a compound represented by the following formula (III) as the above-mentioned (b) an addition polymerizable monomer containing at least one terminal ethylenically unsaturated group. [化3] Η 0

I II /NC-O~(A-0)n-|1>(B-0)n12—〇—C—pu R12 (HI) I! | CH: 〇 R13 ”飞—O—(A*0)ni3-(B"0)ni4—C—C—ch2 H 〇 ϋ ^I II /NC-O~(A-0)n-|1>(B-0)n12—〇—C—pu R12 (HI) I! | CH: 〇R13 “Fly—O—(A*0) Ni3-(B"0)ni4—C—C—ch2 H 〇ϋ ^

(其中,R A碳數4〜12之直鏈、支鏈或環狀之烷基、或 者碳數6〜12之烧基芳基,R%R、別獨立為氫或甲基, A 為 C2H4,B 為 CH2CH(CH3),ηη〜ηι>ι 八…, "化4分別獨立為〇〜15之整 數,1111 + 1112+1113+1114為2 以上。 ’可為無規排列亦 ,-(A-Ο)-及-(B-0)-° ) 如第1項或第2項之 -(A-Ο)-及-(B-Ο)-之重複單元之排列 可為嵌段排列。於嵌段排列之情形時 之順序,任一者均可在胺基甲酸酯鍵側 3·—種感光性樹脂積層體,其包含由 128769.doc -10- 200846825 感光性樹脂組合物所構成之感光性樹脂層及支持體。 4·一種光阻圖案之形成方法,其特徵在於··包括使用如 第3項之感光性樹脂積層體而於基板上形成感光性樹脂層 之積層步驟、曝光步驟、及顯影步驟。 5. 如第4項之光阻圖案之形成方法,其中於上述曝光步 驟中,進行直接微影而實施曝光。 6. 一種印刷電路板之製造方法,其特徵在於:包括詩 由如第4項或第5項之方法形成有光阻圖案之基板進行钱刻 或電鍍之步驟。 7·-種具有凹凸圖案之基材之製造方法,其特徵在於·· 包括利用喷砂方法對藉由如第4項或第5項之方法形成有光 阻圖案之基板進行加工之步驟。 8·—種半導體封裝體之製造 頊…s + 其包括對藉由如第4 項或弟5項之方法形成有光阻 驟。 木之基板進灯電鍍之步 9.種凸塊之製造方法,其包括對兹i 之方法形成有光阻圖荦之A板堂θ帛4項或第5項 之基板進仃電鍍之步驟。 10·-種導線架之製造方法 5項之方法形成有 對猎由如第4項或第 ,成有先阻圖案之基板進行餘刻之步驟。 ’考Ρ刷電路板之製造方法, 藉由如第4項或第5項之方法形成有:4在於.包括對 鍍之步驟,電鍍步驟 ^之基板進行電 12一T使用鼠化貴金屬電鍍浴。 .一種丰¥體封裝體之製造方法 對藉由如第4項或第5 八特徵在於:包括 項之方法形成有光阻圖案之基板進行 128769.doc 200846825 電鍍之步驟’電鍍步驟中使用氰化貴金屬電鍍浴。 13·-種凸塊之製造方法,其特徵在於:包括對藉 第4項或第5項之方法形成有光阻圖案之基板進行電^之步 驟,電鑛步驟中使用氰化貴金屬電錢浴。 [發明之效果](wherein, the linear, branched or cyclic alkyl group having a carbon number of 4 to 12, or the alkylaryl group having a carbon number of 6 to 12, R%R, independently hydrogen or methyl, and A is C2H4, B is CH2CH(CH3), ηη~ηι>ι 八..., "化4 is independently an integer of 〇~15, and 1111 + 1112+1113+1114 is 2 or more. 'Can be arranged randomly, -(A -Ο)- and -(B-0)-°) The arrangement of the repeating units of -(A-Ο)- and -(B-Ο)- as in item 1 or item 2 may be a block arrangement. In the case of the block arrangement, either of the urethane bond sides may be a photosensitive resin laminate comprising the photosensitive resin composition of 128769.doc -10- 200846825 The photosensitive resin layer and the support. A method of forming a photoresist pattern, comprising the step of forming a photosensitive resin layer on a substrate by using the photosensitive resin laminate according to item 3, an exposure step, and a developing step. 5. The method of forming a photoresist pattern according to item 4, wherein in the above exposure step, direct lithography is performed to perform exposure. A method of manufacturing a printed circuit board, comprising the steps of forming a substrate having a photoresist pattern by a method such as the method of the fourth or fifth aspect. A method of producing a substrate having a concave-convex pattern, comprising: a step of processing a substrate having a photoresist pattern formed by the method of the fourth or fifth aspect by a sand blasting method. 8. Manufacturing of a semiconductor package 顼...s + comprising forming a photoresist by a method as in item 4 or item 5. The step of the substrate of the wood into the lamp plating step 9. The method for manufacturing the bump, which comprises the step of forming the substrate of the A plate θ 帛 4 or the fifth item of the photoresist pattern by the method of the method. 10·- Manufacture method of lead frame The method of item 5 forms a step of engraving the substrate which has been patterned by the fourth or the first, and has a pattern of the first resistance. The method for manufacturing the test brush circuit board is formed by the method of item 4 or 5: 4, including the step of plating, the substrate of the electroplating step, the electric 12-T using a ratified precious metal plating bath . A manufacturing method of a bulk package is carried out by a substrate having a photoresist pattern formed by the method of the fourth aspect or the eighth aspect of the method comprising: 128769.doc 200846825 electroplating step using cyanide in the electroplating step Precious metal plating bath. A method for manufacturing a bump comprising: a step of performing a circuit on a substrate formed with a photoresist pattern by the method of the fourth or fifth aspect, and using a cyanide precious metal electric money bath in the electric ore step . [Effects of the Invention]

本發:提供-種具有對中性〜鹼性氰化貴金屬電鍍浴之 耐性且解析度、密著性、及光_離性優異之可利用鹼性 水溶液進行顯影之感光性樹脂組合物,使用該感光性樹脂 組合物之感光性樹脂積層體,使用該感光性樹脂積層體於 基板上形成光阻圖案之方法,及該光阻圖案之用途;本發 明可適用於印刷電路板之製造、導線架之製造、半導體封 裝體之製造、平面顯示器之製造。 【實施方式】 以下,就本發明加以具體說明。 (a)含竣基黏合劑 於本發明之感光性樹脂組合物中,作為(a)含羧基黏合 劑’可較好地使用含有含α,β_不飽和羧基之單體作為共聚 合成分、酸當量為100〜6〇〇、重量平均分子量為 5,000 〜5〇〇,〇〇〇 者。 為了使感光性樹脂組合物對由鹼性水溶液構成之顯影液 及剝離液具有顯影性及剝離性,含羧基黏合劑之羧基係必 需的。酸當量較好的是100〜600,更好的是250〜450。就確 保與溶劑或組合物中的其他成分尤其是下述加成聚合性 單體之相溶性之觀點而言,酸當量較好的是丨00以上, 128769.doc • 12 - 200846825 又,就維持顯影性及剝離性之觀點而言,酸當量較好的是 600以下。此處,所謂酸當量,係指含有1當量羧基之熱可 塑性共聚物之質量(克)。再者,酸當量之測定,係使用平 沼 Reporting Titrator(COM-555),以 0.1 mol/L的 NaOH水溶 液且利用電位差滴定法而進行。 本發明之含羧基黏合劑之重量平均分子量較好的是 5,000至500,000。就均勻地維持乾膜光阻之厚度、獲得對 顯影液之耐性之觀點而言,較好的是5,000以上,又,就 維持顯影性之觀點而言,較好的是500,000以下。更好的 是,重量平均分子量為20,000至100,000。此時之重量平均 分子量,係指藉由凝膠滲透層析儀(GPC)且使用標準聚苯 乙烯(昭和電工(股)製Shodex STANDARD SM-105)之標準 曲線所測定之重量平均分子量。該重量平均分子量,可使 用曰本分光(股)製造之凝膠滲透層析儀以下列條件進行測 定。 示差折射率計:RI-1530 泵:PU-1580 除氣器:DG-980-50 管柱烘箱:CO-1560The present invention provides a photosensitive resin composition which is resistant to a neutral to alkaline cyanide noble metal plating bath and which is excellent in resolution, adhesion, and photo-dissociation and can be developed by using an aqueous alkaline solution. The photosensitive resin laminate of the photosensitive resin composition, a method of forming a photoresist pattern on a substrate using the photosensitive resin laminate, and the use of the photoresist pattern; the present invention is applicable to the manufacture of a printed circuit board, a wire Manufacture of frames, manufacture of semiconductor packages, and manufacture of flat panel displays. [Embodiment] Hereinafter, the present invention will be specifically described. (a) a ruthenium-based binder in the photosensitive resin composition of the present invention, as the (a) carboxyl group-containing binder, a monomer containing an α,β-unsaturated carboxyl group can be preferably used as a copolymerization component. The acid equivalent is 100 to 6 Torr, and the weight average molecular weight is 5,000 to 5 Å. In order to make the photosensitive resin composition developable and releasable to the developing solution and the peeling liquid composed of the alkaline aqueous solution, the carboxyl group of the carboxyl group-containing binder is required. The acid equivalent is preferably from 100 to 600, more preferably from 250 to 450. From the viewpoint of ensuring compatibility with other components in the solvent or composition, especially the addition polymerizable monomer described below, the acid equivalent is preferably 丨00 or more, 128769.doc • 12 - 200846825 From the viewpoint of developability and peelability, the acid equivalent is preferably 600 or less. Here, the acid equivalent means the mass (gram) of the thermoplastic copolymer containing one equivalent of a carboxyl group. Further, the measurement of the acid equivalent was carried out by a potentiometric titration method using a 0.1 mol/L NaOH aqueous solution using a Biogas Reporting Titrator (COM-555). The weight average molecular weight of the carboxyl group-containing binder of the present invention is preferably from 5,000 to 500,000. From the viewpoint of maintaining the thickness of the dry film resist uniformly and obtaining resistance to the developer, it is preferably 5,000 or more, and from the viewpoint of maintaining developability, it is preferably 500,000 or less. More preferably, the weight average molecular weight is from 20,000 to 100,000. The weight average molecular weight at this time means a weight average molecular weight measured by a gel permeation chromatography (GPC) using a standard curve of standard polystyrene (Shodex STANDARD SM-105 manufactured by Showa Denko Co., Ltd.). The weight average molecular weight can be measured by a gel permeation chromatograph manufactured by a spectrophotometer (strand) under the following conditions. Differential Refractometer: RI-1530 Pump: PU-1580 Deaerator: DG-980-50 Column oven: CO-1560

管柱:依序為 KF-8025、KF-806Mx2、KF-807 溶離液:THF 含羧基黏合劑較好的是由下述第一單體中的至少一種以 上及下述第二單體中的至少一種以上所構成之共聚物。 第一單體係分子中含有α,β-不飽和羧基之單體。例如可 128769.doc -13- 200846825 舉出:(曱基)丙烯酸、反丁烯二酸、肉桂酸、丁烯酸、伊 康自欠順丁烯二酸酐、及順丁稀二酸半酯。其中,尤其好 的是(甲基)丙稀酸。 第二單體為非酸性,係分子中含有至少一個聚合性不飽 和基之單體。例如可舉出:(甲基)丙烯酸曱酯、(甲基)丙 烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、 (甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(曱基)丙烯酸 第二丁酯、(曱基)丙烯酸羥基乙酯、(甲基)丙烯酸2-羥基 丙酉曰、(曱基)丙烯酸環己酯、(甲基)丙烯酸2_乙基己酯、 (甲基)丙烯酸苄酯、乙酸乙烯酯等乙烯醇之酯類、(甲基) 丙稀腈、苯乙烯、及能夠產生聚合之苯乙烯衍生物。其 中,尤其好的是(甲基)丙烯酸曱酯、(甲基)丙烯酸正丁 _、苯乙烯、(甲基)丙烯酸苄酯。 本叙明中所使用之(a)含魏基黏合劑可藉由如下方法而合 成:向以丙酮、甲基乙基酮、異丙醇等溶劑將上述單體的 混合物加以稀釋之溶液中,適量添加過氧化苯甲醯、偶氮 異丁腈等自由基聚合起始劑,再進行加熱攪拌。有時亦一 面將一部分的混合物滴加至反應液中一面進行合成。至於 合成方法,除溶液聚合以外,亦可採用塊狀聚合、懸浮聚 合及乳化聚合。 本發明中所使用之(a)含羧基黏合劑相對於光聚合性樹脂 組合物整體之比例為20質量%以上、9〇質量%以下,更好 的是30質量%以上、70質量%以下,尤其好的是4〇質量y 以上、60質量%以下。就提高蓋孔膜強度、抑制邊緣熔融° 128769.doc -14 - 200846825 之觀點而言,齡杯认 _ 奴好的是2〇質量%以上 點而S,較好的是9〇質量%以下。 就提高顯影性之觀 (b)3有至少_個末端乙烯性不飽和基之加成聚合性單體 本發明中所使用之⑻含有至少—個末端乙烯性不飽和 =之加成聚合性單體(以下,簡單地稱為加成聚合性單 -)’係包含選自由以下述通式⑴及通式(π)所表示之化合 物所組成群中的至少—種化合物作為必需成分。 [化4]Column: KF-8025, KF-806Mx2, KF-807 Solvent: THF The carboxyl group-containing binder is preferably at least one of the following first monomers and the second monomer described below At least one or more copolymers. A monomer having an α,β-unsaturated carboxyl group in the first single system molecule. For example, 128769.doc -13- 200846825 exemplify: (mercapto)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, yacon self-supplemented maleic anhydride, and cis-butane dicarboxylic acid half ester. Of these, (meth)acrylic acid is particularly preferred. The second monomer is non-acidic and is a monomer having at least one polymerizable unsaturated group in the molecule. For example, decyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, (A) Isobutyl acrylate, second butyl (meth) acrylate, hydroxyethyl (meth) acrylate, 2-hydroxypropionate (meth) acrylate, cyclohexyl (meth) acrylate, (methyl) Ethyl alcohol esters such as 2-ethylhexyl acrylate, benzyl (meth) acrylate, vinyl acetate, (meth) acrylonitrile, styrene, and styrene derivatives capable of generating polymerization. Among them, particularly preferred are decyl (meth)acrylate, n-butyl (meth)acrylate, styrene, and benzyl (meth)acrylate. The (a) Wei-containing binder used in the present specification can be synthesized by diluting a mixture of the above monomers into a solvent such as acetone, methyl ethyl ketone or isopropanol. A radical polymerization initiator such as benzamidine peroxide or azoisobutyronitrile is added in an appropriate amount, followed by heating and stirring. Sometimes, a part of the mixture is added dropwise to the reaction liquid for synthesis. As for the synthesis method, in addition to solution polymerization, bulk polymerization, suspension polymerization, and emulsion polymerization can also be employed. The ratio of the (a) carboxyl group-containing binder to the photopolymerizable resin composition as used in the present invention is 20% by mass or more and 9% by mass or less, more preferably 30% by mass or more and 70% by mass or less. Particularly preferably, it is 4 〇 or more and 60% by mass or less. In view of the improvement of the strength of the cover film and the suppression of the edge melting, the age of the cup is preferably 2% by mass or more and S is preferably 9% by mass or less. The addition polymerizable monomer having at least one terminal ethylenically unsaturated group in the viewpoint of improving developability (b) 3 (8) used in the invention contains at least one terminal ethylenic unsaturated = addition polymerization single The body (hereinafter, simply referred to as an addition polymerizable single-)' contains at least one compound selected from the group consisting of compounds represented by the following general formula (1) and the general formula (π) as an essential component. [Chemical 4]

CH2—0-C—〇~ch vi? | b 2 ^C-〇—(A^Q)nr^〇)n2—CH-CH2-〇-C-C-nu «X ϋ Γ 2 Ο)CH2—0-C—〇~ch vi? | b 2 ^C-〇—(A^Q)nr^〇)n2—CH-CH2-〇-C-C-nu «X ϋ Γ 2 Ο)

IJ4 -异—〇—(Α·0》π 3·(Β-0)Π4-〇Η—C Η厂 Ο— Η Ο CH2—〇一c—c—ru I! I' 2 Ο R5IJ4 - 异 -〇 -(Α·0)π 3·(Β-0)Π4-〇Η—C Η厂 Ο— Η Ο CH2—〇一c—c—ru I! I' 2 Ο R5

(其中,R1為碳數4〜12之直鏈、支鏈或環狀之烷基、或 者碳數6〜12之烷基芳基,R2〜R5分別獨立為氫或曱基,八為 C2H4,Β為CH2CH(CH3),η〗〜η4分別獨立為〇〜15之整數,ηι + 112 + ΓΙ3 + 為 2 以上。 -(A-Ο)-及-(B-0)-之重複單元之排列,可為無規排列亦 可為嵌段排列。於嵌段排列之情形時,_(八-〇)_及-(B_0)_ 之順序,任一者均可在胺基甲酸酯鍵側。) 128769.doc -15- 200846825 [化5] (Α-0)Π5*(Β·〇)^6(wherein R1 is a linear, branched or cyclic alkyl group having a carbon number of 4 to 12, or an alkylaryl group having a carbon number of 6 to 12, and R2 to R5 are each independently hydrogen or a fluorenyl group, and octa is C2H4, Β is CH2CH(CH3), η 〗 〖η4 are each an integer of 〇~15, and ηι + 112 + ΓΙ3 + is 2 or more. - Arrangement of repeating units of -(A-Ο)- and -(B-0)- It may be a random arrangement or a block arrangement. In the case of block arrangement, the order of _(eight-〇)_ and -(B_0)_ may be on the urethane bond side. .) 128769.doc -15- 200846825 [Α5]Π5*(Β·〇)^6

OHOH

Hfi C'N—Re—N-C-O—(Α-0)ητ-(Β-0)η&—·CH-CH2-〇— ϋ CHo 乂C-M—R7一N.C_0一(A-O)n0-{B-O)nt〇—-CH'CH2-〇—c一C一广1_»ϋπ U I H i,7CHi CH2-〇—c__q—ru 丨丨「CH2 0 R11Hfi C'N-Re-NCO-(Α-0)ητ-(Β-0)η&-·CH-CH2-〇-ϋ CHo 乂CM-R7-N.C_0-(AO)n0-{BO) Nt〇—CH'CH2-〇—c—C一广1_»ϋπ UIH i,7CHi CH2-〇—c__q—ru 丨丨“CH2 0 R11

(ID(ID

(其中,R6及R7分別獨立為碳數4〜12之直鏈、支鏈或環 狀之烷基、或者碳數6〜12之烷基芳基,R8〜Rii分別獨立為 氫或甲基,A為C2H4,B為CH2CH(CH3),n5及〜分別獨立 為0〜15之整數,t^+n6為1以上。幻〜niQ分別獨立為〇〜15之 整數,η7+η8+η9+ηι〇為2以上。 -(A-O)-及-(B-O)-之重複單元之排列,可為無規排列亦 可為嵌段排列。於嵌段排列之情形時,-(八_〇)_及_(心〇)_ 之順序,任一者均可在胺基甲酸酯鍵側。) 選自由以上述通式(I)及通式(π)所表示之化合物所組成 群中的至少一種化合物於本發明之感光性樹脂組合物中所 占之比例,較好的是於感光性樹脂組合物整體中為丨〜“質 量%,更好的是3〜30質量%。進而更好的是2〇質量%以 就表現良好的電難之觀點而言,該量較好的是!質 里/〇以上X尽尤具有良好的剝離性之觀點而纟,該量較 好的是50質量%以下。 至於以上料式⑴所表^之化合物,可舉㈣異氛酸醋 與一分子中具有經基及二個(甲基)丙烯基的化合物(甘油二 128769.doc -16- 200846825 甲基丙烯酸酯之聚環氧乙烷鏈加成物、甘油二甲基丙稀酸 酯之聚環氧丙烷鏈加成物、甘油二甲基丙稀酸醋之聚環氧 乙燒-聚環氧丙烧鏈加成物等)所形成之胺基曱酸g旨化合 物。至於所使用之聚異氰酸酯,可舉出:曱苯二異氛酸 酯、二苯基甲烷-4,4’-二異氰酸酯、六亞甲基二異氰酸 酯、異佛爾酮二異氰酸酯、鄰二曱苯二異氰酸酯、間二甲 苯二異氰酸酯、對二甲苯二異氰酸酯、α,α,_二曱基-鄰二 甲笨一異氰酸酉曰、α,α’-二甲基-間二甲苯二異氰酸酯、 α’α1·二甲基-對二曱苯二異氰酸酯、α,α,α’_三甲基_鄰二甲 苯二異氰酸酯、α,α,α’_三曱基_間二甲苯二異氰酸酯、 α,α,α -一甲基-對一曱苯二異氰酸酯、α,α,α,,α,_四甲基-鄰 二曱苯二異氰酸酯、α,α,α,,α,_四曱基_間二曱苯二異氰酸 酉旨、α,α,α,,α’-四甲基對二甲苯二異氰酸醋、環己烷二L氰 酸酉旨等。亦可舉出將二異氰㈣化合物的料環進行氣;匕 之化合物,例如間二甲苯二異氰酸醋之氫化物(三井武田 化學製造之Takenate60〇)等。 至於以上述通式⑴所表示化合物之具體例’可舉出:六 亞甲基二異氰酸s旨與加成有平均5莫耳環氧丙烧的甘油二 曱基丙烯㈣之反應物(於上述通式⑴中,r1為六亞甲 基R〜R為曱基、ηι=η3=。、〜^巧之化合物,東邦化學 工業(股)製造,UA-47)、丄re田装一苗&说卜 亞曱基一異氰I酉曰與加成有平 均4莫耳環氧乙院的甘油二甲基丙稀酸6旨之反應物(於上述 通式⑴中,R1為六亞甲基、r2〜r5為甲基、㈣㈣、 n2-n4=〇之合物,東邦化學工業⑻製造,—⑷)。 128769.doc -17- 200846825 至於以上述通式(Π)所表示之化合物,可舉出:聚異气 酸自旨與一分子中含有羥基及二個(甲基)丙烯基的化合物(甘 油二甲基丙烯酸酯之聚環氧乙烷鏈加成物、甘油二甲基内 烯酸酷之聚環氧丙烷鏈加成物、甘油二甲基丙烯酸酯之聚 環氧乙烧-聚環氧丙烷鏈加成物等)及(聚)伸烷基二醇所形 成之胺基甲酸酯化合物。作為聚異氰酸酯,可使用上述 者。 至於以上述通式(II)所表示化合物之具體例,可舉出: 六亞甲基二異氰酸酯與加成有平均4莫耳環氧乙烷的甘油 二甲基丙烯酸酯、及加成有平均6莫耳環氧乙烷及平均13 莫耳環氧丙烷的聚烷二醇之反應物(亦即,於上述通式(Η) 中,R6及R7為六亞甲基、r8〜r"為甲基、η7=η9=4、 n8=n1Q=〇、η5=6、η6=13之化合物··東邦化學工業(股)製 ^ UA 42),/、亞甲基一異氰酸自旨與加成有平均$莫耳環 氧丙鴕的甘油二甲基丙烯酸酯、及加成有平均6莫耳環氧 乙烷及平均13莫耳環氧丙烷的聚伸烷基二醇所形成之反應 物(亦即,於上述通式(„)中,R6&R7為六亞甲基、r8〜r1i 為甲基 、n8==ni〇=5、n5 = 6、n6=13之化合物:東 邦化學工業(股)製造,UA-48)等。 至於本發明中所使用之(b)加成聚合性單體,除上述化 口物以外’亦可併用含有至少一個末端乙烯性不飽和基之 公知化合物。 例如可舉出.四乙二醇二(甲基)丙稀酸醋、九乙二醇二 (甲基)丙烯酸酯、九乙二醇二(甲基)丙烯酸酯、三羥曱基 128769.doc -18- 200846825 丙烷三(甲基)丙烯酸酯、聚氧乙基三羥甲基丙烷三(甲基) 丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、季戊四醇乙氧基 化四(曱基)丙烯酸酯、4-壬基苯基七乙二醇二丙二醇丙烯 酸酯、丙烯酸2-羥基-3-苯氧基丙酯、苯氧基六乙二醇丙烯 酸酯、鄰苯二甲酸酐與丙烯酸2-羥基丙酯的半酯化合物與 環氧丙烷所形成之反應物(日本觸媒化學製造,商品名〇E- ’ A 200)、‘正辛基苯氧基五丙二醇丙烯酸酯、2,2-雙[{4_ (曱基)丙烯醯氧基聚乙氧基}苯基]丙烷、2,2_雙{(4_丙烯醯 氧基聚乙氧基)環己基}丙烷或2,2-雙{(4-甲基丙烯醯氧基聚 乙氧基)環己基}丙烷、1,6-己二醇(甲基)丙烯酸酯、〗,4_環 己二醇二(甲基)丙烯酸酯,又可舉出:聚丙二醇二(甲基) 丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚氧伸乙基聚氧 伸丙基二醇二(甲基)丙烯酸酯等之聚氧伸烷基二醇二(甲 基)丙烯酸酯、2-二(對羥基苯基)丙烷二(甲基)丙烯酸酯、 甘油三(甲基)丙烯酸酯、2,2_雙(4_甲基丙烯醯氧基五乙氧 _ 基苯基)丙烷、及異二聚氰酸酯化合物之多官能(甲基)丙烯 酸醋。 又,就進-步提高析像性、密著性、及對中性〜鹼性氰 * 浴中的貴金屬電鍍之耐性之觀點而言,含有以下述通式 ‘ (ΠΙ)所表示之化合物係本發明之較佳實施形態。 128769.doc -19- 200846825 [化6](wherein R6 and R7 are each independently a linear, branched or cyclic alkyl group having 4 to 12 carbon atoms, or an alkylaryl group having 6 to 12 carbon atoms, and R8 to Rii are each independently hydrogen or methyl. A is C2H4, B is CH2CH(CH3), n5 and ~ are each independently an integer of 0 to 15, and t^+n6 is 1 or more. The illusion~niQ is independently an integer of 〇15, η7+η8+η9+ηι 〇 is 2 or more. The arrangement of repeating units of -(AO)- and -(BO)- may be a random arrangement or a block arrangement. In the case of block arrangement, -(八_〇)_ and Any of _(heart 〇)_ may be on the urethane bond side.) At least one selected from the group consisting of the compounds represented by the above formula (I) and formula (π) The proportion of the compound in the photosensitive resin composition of the present invention is preferably from 丨 to "% by mass, more preferably from 3 to 30% by mass, based on the entire photosensitive resin composition. Further preferably 2% by mass is considered to be a good electric difficulty, and the amount is preferably: from the viewpoint of having good peelability in the above-mentioned quality/〇, and the amount is preferably 50% by mass. the following. The compound represented by the above formula (1) is exemplified by (iv) an oleic acid vinegar and a compound having a thiol group and two (meth) propylene groups in one molecule (glycerol II 128769.doc -16-200846825 methacrylate) Polyethylene oxide chain adduct, polypropylene oxide chain adduct of glycerol dimethyl acrylate, polyepoxybutene-polypropylene propylene burning chain of glycerol dimethyl acrylate An adduct of a metal phthalic acid formed by an adduct or the like. Examples of the polyisocyanate to be used include anthraquinone diisocyanate, diphenylmethane-4,4'-diisocyanate, and hexa Methyl diisocyanate, isophorone diisocyanate, o-diphenylene diisocyanate, m-xylene diisocyanate, p-xylene diisocyanate, α,α,_didecyl-o-dimethyl phthalocyanine , α,α'-dimethyl-m-xylene diisocyanate, α'α1·dimethyl-p-diphenylene diisocyanate, α,α,α'-trimethyl-o-xylene diisocyanate, α, α,α'_tridecyl-m-xylene diisocyanate, α,α,α-monomethyl-p-nonylphenyl diisocyanate, α,α,α, α,_Tetramethyl-o-diphenylene diisocyanate, α,α,α,,α,_tetradecyl-m-diphenylene diisocyanate, α,α,α,,α'-four Methyl-p-xylene diisocyanate, cyclohexane di-cyanate, etc. It is also possible to carry out the gas ring of the diisocyanate compound, and a compound such as m-xylene diisocyanate. A hydride of vinegar (Takenate 60〇 manufactured by Mitsui Takeda Chemical Co., Ltd.), etc. As a specific example of the compound represented by the above formula (1), hexamethylene diisocyanate has an average of 5 moth earrings. The reactant of oxypropylene glycerol dimercaptopropene (IV) (in the above formula (1), r1 is hexamethylene R to R is a fluorenyl group, and ηι = η3 =. , ~^ Qiaozhi compound, manufactured by Toho Chemical Industry Co., Ltd., UA-47), 丄re Tianzhuang, a seedling & said that the arsenic-iso-cyanide I 酉曰 and the addition have an average of 4 moles of epoxy Reaction of glycerol dimethyl acrylate 6 (in the above formula (1), R1 is hexamethylene, r2 to r5 are methyl, (tetra) (tetra), n2-n4 = ruthenium, Toho Chemical Industry (8) Manufacturing, - (4)). 128769.doc -17- 200846825 As the compound represented by the above formula (Π), a polyisoxic acid and a compound having a hydroxyl group and two (meth)acryl groups in one molecule (glycerol II) may be mentioned. Polyethylene oxide chain adduct of methacrylate, polypropylene oxide chain adduct of glycerol dimethyl endoate, polyepoxy-polypropylene oxide of glycerol dimethacrylate A urethane compound formed by a chain adduct or the like and a (poly)alkylene glycol. As the polyisocyanate, the above may be used. Specific examples of the compound represented by the above formula (II) include hexamethylene diisocyanate and glycerol dimethacrylate having an average of 4 mol of ethylene oxide added thereto, and an average of addition of 6 a reaction of a molar ethylene oxide and a polyalkylene glycol having an average of 13 moles of propylene oxide (i.e., in the above formula (Η), R6 and R7 are hexamethylene, r8~r" are methyl, Η7=η9=4, n8=n1Q=〇, η5=6, η6=13 compound··Dongbang Chemical Industry Co., Ltd. ^ UA 42), /, methylene-isocyanate has its own purpose and addition An average of $ mega epoxicone glycerol dimethacrylate, and a reactant formed by addition of an alkylene diol having an average of 6 moles of ethylene oxide and an average of 13 moles of propylene oxide (ie, In the above formula („), R6&R7 is a hexamethylene group, r8~r1i is a methyl group, n8==ni〇=5, n5=6, n6=13 compound: manufactured by Toho Chemical Industry Co., Ltd. UA-48), etc. As for the (b) addition polymerizable monomer used in the present invention, in addition to the above-mentioned chemical substance, it is also known to use at least one terminal ethylenically unsaturated group in combination. Examples of the compound include tetraethylene glycol di(meth)acrylic acid vinegar, nonaethylene glycol di(meth)acrylate, nonaethylene glycol di(meth)acrylate, and trishydroxycarbonyl group 128769. .doc -18- 200846825 Propane tri (meth) acrylate, polyoxyethyl trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, pentaerythritol ethoxylated tetra (indenyl) Acrylate, 4-mercaptophenylheptaethylene glycol dipropylene glycol acrylate, 2-hydroxy-3-phenoxypropyl acrylate, phenoxy hexaethylene glycol acrylate, phthalic anhydride and acrylic acid 2 a reaction product of a hydroxypropyl ester half ester compound and propylene oxide (manufactured by Nippon Shokubai Chemical Co., Ltd., trade name 〇E- 'A 200), 'n-octylphenoxypentapropylene glycol acrylate, 2,2- Double [{4_(fluorenyl) propylene oxime polyethoxy] phenyl] propane, 2, 2 bis {(4 propylene oxypolyethoxy) cyclohexyl} propane or 2, 2- bis {(4-Methyl propylene oxypolyethoxy)cyclohexyl}propane, 1,6-hexanediol (meth) acrylate, 〗 〖, 4_cyclohexanediol di(meth) propylene Examples of the ester include polypropylene glycol di(meth) acrylate, polyethylene glycol di(meth) acrylate, polyoxyethylene ethyl polyoxypropyl propylene di(meth) acrylate, and the like. Polyoxyalkylene glycol di(meth)acrylate, 2-bis(p-hydroxyphenyl)propane di(meth)acrylate, tris(meth)acrylate, 2,2_double (4_ a polyfunctional (meth)acrylic acid vinegar of methacryloxy-pentaoxypentaethoxy-phenyl)propane and a heterodimeric cyanate compound. Further, the resolution, adhesion, and the like are further improved. From the viewpoint of the resistance of the noble metal plating in the neutral to alkaline cyanide* bath, the compound represented by the following formula '(ΠΙ)) is a preferred embodiment of the present invention. 128769.doc -19- 200846825 [Chem. 6]

N*C-0'~(A-0)nlr(B-0)n-i2一〇—c—CH 13 2 (ΠΙ )N*C-0'~(A-0)nlr(B-0)n-i2〇—c—CH 13 2 (ΠΙ )

N~C—0~(Α-Ο)η^3-(Β-0)Πΐ4—CN~C—0~(Α-Ο)η^3-(Β-0)Πΐ4—C

—?=CH a O R1—?=CH a O R1

(此處,R12為碳數4〜12之直鏈、支鏈或環狀之烷基、或 者碳數6〜12之烷基芳基,R13及R14分別獨立為氫或甲基, A為QH4 ’ B為CH2CH(CH3) ’ nil〜nH分別獨立為〇〜15之整 數’ ηιι + η〗2+ηΐ3+η〗4為2以上。 -(A-Ο)-及-(B-0)-之重複單元之排列,可為無規排列亦 可為嵌段排列。於嵌段排列之情形時,_(八_〇)_及_(Β·〇)_ 之順序,任一者均可在胺基曱酸酯鍵側。) 至於以上述通式(III)所表示化合物之具體例,可舉出: 二異氰酸酯化合物(例如,六亞甲基二異氰酸酯、甲苯二 異氰酸酯、或2,2,4-三甲基六亞甲基二異氰酸酯)與一分子 中含有羥基及(甲基)丙烯基的化合物(例如,丙烯酸2_羥基 丙酯、具有丙二醇鏈之單曱基丙烯酸酯、具有聚乙二醇鏈 之單甲基丙烯酸酯、具有環氧乙烷鏈及環氧丙烷鏈之單甲 基丙烯酸酯等)所形成之胺基甲酸酯化合物。 相對於感光性樹脂組合物整體,含有以上述通式(1叩所 表不化合物時之含量較好的是3〜7〇質量%。就解析度之觀 點而a,較好的是3質量%以上,就光阻圖案之可撓性之 觀點而言,較好的是70質量%以下。 128769.doc -20. 200846825 本發明之感光性樹脂組合物中 抑 口初〒所含有之(b)加成聚合性 早體之量為5〜75質量%之範圍,更好的範圍為WO質量 %::抑制硬化不良及顯影時間延遲之觀點而言,該量為 5貝里%以上,又,就抑制冷流(c〇id f㈣及硬化光阻的剝 離延遲之觀點而言,該量為75質量%以下。 (c)光聚合起始劑 本發明之感光性樹脂組合物中,作為⑷光聚合起始劑, 可使用通常所知者。本發明之感光性樹脂組合物所含有之 (C)光聚合起始劑之量為〇.〇1〜3〇質量%之範圍,更好的範 圍為0.05〜10質量%。就獲得充分的敏感度之觀點而言,較 好的是請質量%以上’又’就使光充分透射直至光阻底 面、獲得良好的高解析性之觀點而言,較好的是3〇質量% 以下。 至於此種光聚合起始劑,可舉出:乙基蒽醌、八乙基 蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,弘二 苯基恩醌、1-氯蒽醌、2-氯蒽醌、2_甲基蒽醌、丨,4_萘 醌、9,10-菲醌、2-甲基- i,4-萘醌、9,1〇_菲醌、2-曱基 萘醌、2,3·二曱基蒽醌、3_氯_2_曱基蒽醌等之醌類;二苯 曱酮、米其勒酮[Michler’s ketone,4,4f-雙(二曱基胺基)二 苯曱酮]、4,4匕雙(二乙基胺基)二苯甲酮等之芳香族酮類; 安息香、安息香乙醚、安息香苯基醚、安息香曱醚、安息 香乙醚等之安息香醚類;苄基二甲基縮酮、苄基二乙基縮 酮等之二烷基縮酮類;二乙基噻噸酮、氯噻噸酮等之噻噸 酮類,二曱基胺基苯曱酸乙酯等之二烧基胺基笨甲酸酯 128769.doc •21- 200846825 類;1-苯基-1,2-丙二酮鄰苯甲醯肟、l苯基n丙一 鋼-2-(鄰乙氧基幾基)將等之蔣_類;2.氯苯基)c二 苯基咪唑二聚物、2_(鄰氯苯基)_4,5-雙(”氧基苯基”: 唑二聚物、2-(對甲氧基苯基m,5:二苯基味4二聚物等之 咯吩(lophine)二聚物,吖啶、9_苯基吖啶、9_(對甲基苯 基)吖啶、9…(對乙基苯基)吖啶、9_(對異丙基苯基广丫啶、 9-(對正丁基苯基)吖啶、9_(對第三丁基苯基)吖啶、&气對 甲氧基苯基)吖啶、9-(對乙氧基苯基)吖啶、、(對乙醯苯 基)口丫啶、9-(對三甲基胺基苯基)口丫 σ定、9_(對氰基苯基苯 基)吖啶、9-(對氯苯基)吖啶、9_(對溴苯基)吖啶、9气間甲 基苯基)吖啶、9-(間正丙基苯基)吖啶、、(間異丙基苯基) 吖啶、9-(間正丁基苯基)吖啶、9_(間第三丁基苯基)吖啶、 間甲氧基苯基)吖啶、9-(間乙氧基苯基)吖啶、9_(間乙 醯苯基)吖啶、9-(間二甲基胺基苯基)吖啶、9_(間二乙基胺 基苯基)吖啶、9-(氰基苯基)吖啶、9·(間氯苯基)吖啶、9_ (間溴苯基)吖啶、9-甲基吖啶、9-乙基吖啶、、正丙基% 咬、9-異丙基吖啶、9-氰基乙基吖啶、9-羥基乙基吖啶、 9-氯乙基吖啶、9-甲氧基吖啶、9_乙氧基吖啶、9-正丙氧 基吖啶、9-異丙氧基吖啶、9-氯乙氧基吖啶,小苯基甘胺 酸' Ν-甲基·Ν-苯基甘胺酸、Ν-乙基苯基甘胺酸,溴化 戊烧、異戊基溴、溴化異丁烯、二溴乙烯、二苯甲基溴、 苄基 >臭、一、/臭甲烧、三漠甲基苯基石風、四溴化碳、三(2,3_ 二溴丙基)磷酸酯、三氯乙醯胺、碘戊烷、填異丁烷、 1,1,1·三氯-2,2·雙(對氯苯基)乙烷,苯基_3·(4-第三丁基· 128769.doc •22- 200846825 苯乙烯基)-5-(4-第三丁基-苯基)吡唑啉等之吡唑啉化合物 等。 尤其就高解析度之觀點而言,較好的是將2_(鄰氯苯基)_ 4,5-一本基味嗤一聚物與米其勒g同[^,^|_雙(二曱基胺基)二 苯曱酮]或4,4匕雙(二乙基胺基)二苯甲酮加以組合。 於本發明之感光性樹脂組合物中,除上述成分以外,亦 可使用染料、顏料等著色物質。至於此種著色物質,例如 可舉出··酞青綠、結晶紫、甲基橙、尼羅藍(nile blue)2B、維多利亞藍、孔雀綠、鹼性藍(basic blue)2〇、及 鑽石綠等。 又’亦可於本發明之感光性樹脂組合物中添加顯色劑, 以能夠利用曝光來提供可視圖像。至於此種顯色劑,可舉 出:無色染料或螢烷(fluorane)染料與鹵素化合物之組合。 至於遠鹵素化合物’可舉出··溴戊烷、溴異戊烷、溴化異 丁烯、溴化乙烯、二苯甲基溴、苄基溴、二溴甲烷、三溴 甲基苯基砜、四溴化碳、三(2,3_二溴丙基)磷酸酯、三氯 乙醯胺、碘戊烷、碘異丁烷、三氯_2,2_雙(對氣苯基) 乙烷、六氯乙烷、及氯化三嗪化合物等。 著色物質及顯色劑之量,於感光性樹脂組合物中,較好 的是分別為0.01〜1〇質量%。就可識別充分的著色性(顯色 性)之觀點而言,較好的是〇〇1質量%以上,就具有曝光部 與未曝光部的對比度、維持保存穩定性之觀點而言,較好 的是1 〇質量%以下。 進而’為了提高本發明之感光性樹脂組合物的熱穩定 128769.doc -23- 200846825 性、保存穩定性,較好的是使感光性樹脂組合物中含有琴 自以自由基聚合抑制劑、苯并三唑類、及羧基苯并三唑二 所組成群中的至少一種以上之化合物。 、 至於此種自由基聚合抑制劑,例如可舉出:對甲氧 •㉟、對苯二紛、鄰苯三齡、萘胺、第三丁基鄰笨二盼:氯 化亞銅、2,6-二(第三丁基)對 〜 A楚-丁 f 亞甲基雙(4-甲基- .6_弟二丁基本盼)、2,2,-亞甲基雙(4_乙基-"三 酴)、亞蜗基苯基經基胺銘鹽、及二苯基亞硝基胺等。 又,至於苯并三唾類,例如可舉出:1,2,3_苯并三心 …,2,3-苯并三唾、雙㈣乙基 - 苯并三唑、雙(N_2_乙其? I、* 土纪T基-1,2,3- 心2乙基己基)胺基亞甲基 三嗤、及雙(N-2-經基乙基) ,甲基本开 等。·甲土 _1,2,3 -苯并三唾 又’至於羧基苯并三唑類, 苯并三唾m,2,3-苯并例Γ舉出:續基-1,2,3· 基亞甲基幾基苯并三唾、及ν,ν(_’Ν·二經基乙基)胺 乙基羧基苯并三唑等。 ,一 乙基己基)胺基伸 自由基聚合抑制劑、苯并三 合計添加量,較好的 、、及幾基苯并三唾類之 ””就對感光性樹腊組 言,該量較好的是〇〇1質旦%、 保存穩定性之觀點而 觀:言,該量較好的是3;量:=,就维持敏感度之 為了提高本發明之感光 "曰組合物的色調穩定性,亦 128769.doc -24- 200846825 可使感光性樹脂組合物中含有亞磷酸醋化合物。至於亞磷 酸醋化合物,例如可舉出:2,4,8算四(第三丁基)·6例3_ 甲基_4_羥基_5_第二丁其贫 弟一丁基本基)丙氧基]二苯并[d,f][l,3,2]: ϋ惡磷環庚燒、2 2-亞甲基雔μ 6 / ώ甲暴又(4,6_二(第三丁基)苯基)辛基亞 碌酸酯、雙(2 4_ - r筮=η- #、μ t , 一弟一 丁基)本基)季戊四醇-二亞碟酸 8曰、二(2,4_二(第三丁基)苯基)亞磷酸醋、4,4,-亞丁基雙 (3-甲基-6-第三丁基苯基_二(十三烷基)亞磷酸酯、異(here, R12 is a linear, branched or cyclic alkyl group having a carbon number of 4 to 12, or an alkylaryl group having a carbon number of 6 to 12, and R13 and R14 are each independently hydrogen or methyl, and A is QH4. 'B is CH2CH(CH3)' nil~nH are each independently an integer of 〇~15' ηιι + η〗 2+ηΐ3+η4 is 2 or more. -(A-Ο)-and-(B-0)- The arrangement of the repeating units may be a random arrangement or a block arrangement. In the case of block arrangement, the order of _(eight_〇)_ and _(Β·〇)_ may be The amino phthalate bond side.) Specific examples of the compound represented by the above formula (III) include a diisocyanate compound (for example, hexamethylene diisocyanate, toluene diisocyanate, or 2, 2, 4-trimethylhexamethylene diisocyanate) and a compound having a hydroxyl group and a (meth)acryl group in one molecule (for example, 2-hydroxypropyl acrylate, monodecyl acrylate having a propylene glycol chain, having polyethyl b A urethane compound formed by a monomethacrylate of a glycol chain, a monomethacrylate having an ethylene oxide chain or a propylene oxide chain, or the like. The content of the photosensitive resin composition as a whole is preferably from 3 to 7 % by mass based on the compound represented by the above formula (1), and a is preferably from 3% by mass in terms of resolution. The above is preferably 70% by mass or less from the viewpoint of the flexibility of the resist pattern. 128769.doc -20. 200846825 (b) Contained in the photosensitive resin composition of the present invention The amount of the addition polymerizable precursor is in the range of 5 to 75% by mass, and more preferably in the range of WO% by mass: from the viewpoint of suppressing the hardening failure and the development time delay, the amount is 5 Berry% or more, and The amount is 75 mass% or less from the viewpoint of suppressing the peeling retardation of the cold flow (c) and the curing photoresist. (c) Photopolymerization initiator In the photosensitive resin composition of the present invention, as (4) light The amount of the (C) photopolymerization initiator contained in the photosensitive resin composition of the present invention is in the range of 〇. 〇1 to 3 〇% by mass, and a better range. It is 0.05 to 10% by mass. In terms of obtaining sufficient sensitivity, it is better to ask for quality. From the viewpoint of sufficiently transmitting light to the bottom surface of the photoresist and obtaining good high resolution, it is preferably 3% by mass or less. As for the photopolymerization initiator, there are mentioned: Base, octaethylguanidine, 1,2-benzopyrene, 2,3-benzopyrene, 2-phenylindole, 2, hongdiphenyl enan, 1-chloroindole, 2 -Chloropurine, 2-methylhydrazine, anthracene, 4_naphthoquinone, 9,10-phenanthrenequinone, 2-methyl-i,4-naphthoquinone, 9,1 quinone phenanthrenequinone, 2-mercaptopurine Anthraquinones such as naphthoquinone, 2,3·diindenylhydrazine, 3-chloro-2-indolylhydrazine, etc.; diphenyl fluorenone, Michler's ketone, 4,4f-bis(didecyl) Aromatic ketones such as amino)diphenyl fluorenone], 4,4 bis(diethylamino)benzophenone; benzoin, benzoin ethyl ether, benzoin phenyl ether, benzoin ether, benzoin ethyl ether, etc. Benzoin ethers; dialkyl ketals such as benzyl dimethyl ketal and benzyl diethyl ketal; thioxanthone such as diethyl thioxanthone and chlorothioxanthone, dinonylamine Dialkylamino benzoate such as ethyl benzoate; 128769.doc • 21- 200846825 Class; 1- Base-1,2-propanedione o-benzidine, l-phenyl n-propenyl-2-(o-ethoxyl) will be the same as JIANG; class 2. chlorophenyl) c diphenyl Imidazole dimer, 2-(o-chlorophenyl)-4,5-bis("oxyphenyl": azole dimer, 2-(p-methoxyphenyl m, 5: diphenyl taste 4 dimerization Lophine dimer, acridine, 9-phenyl acridine, 9-(p-methylphenyl) acridine, 9... (p-ethylphenyl) acridine, 9-(isopropyl Phenyl phenyl acridine, 9-(p-n-butylphenyl) acridine, 9-(p-tert-butylphenyl) acridine, & methoxy-p-methoxyphenyl) acridine, 9-(pair Ethoxyphenyl)acridine, (p-ethylphenyl) acridine, 9-(p-trimethylaminophenyl) oxime, 9-(p-cyanophenylphenyl) acridine , 9-(p-chlorophenyl)acridine, 9-(p-bromophenyl)acridine, 9-m-methylphenyl)acridine, 9-(iso-propylphenyl)acridine, (different) Propyl phenyl) acridine, 9-(meth-butylphenyl) acridine, 9-(m-butylphenyl) acridine, m-methoxyphenyl) acridine, 9-(oxyethoxy) Phenyl) acridine, 9-(m-ethylphenyl) acridine, 9-(m-dimethyl Aminophenyl) acridine, 9-(m-ethylaminophenyl) acridine, 9-(cyanophenyl)acridine, 9-(m-chlorophenyl)acridine, 9-(m-bromophenyl) Acridine, 9-methyl acridine, 9-ethyl acridine, n-propyl % bite, 9-isopropyl acridine, 9-cyanoethyl acridine, 9-hydroxyethyl acridine, 9-chloroethyl acridine, 9-methoxyacridine, 9-ethoxy acridine, 9-n-propoxy acridine, 9-isopropoxy acridine, 9-chloroethoxy acridine , small phenylglycine' Ν-methyl Ν-phenylglycine, Ν-ethyl phenylglycine, pentyl bromide, isoamyl bromide, brominated isobutylene, dibromoethylene, two Benzyl bromide, benzyl > odor, one, / smoldering, three desert methyl phenyl stone, carbon tetrabromide, tris(2,3-dibromopropyl) phosphate, trichloroacetamide, Iodopentane, isobutane, 1,1,1·trichloro-2,2·bis(p-chlorophenyl)ethane, phenyl_3·(4-tert-butyl·128769.doc •22 - 200846825 Pyrazoline compound such as styryl)-5-(4-t-butyl-phenyl)pyrazoline. Especially from the viewpoint of high resolution, it is preferred to use 2_(o-chlorophenyl)-4,5-mono-based miso-polymer with Michelin g [^,^|_double (two Mercaptoamino)diphenyl fluorenone or 4,4 bis(diethylamino)benzophenone is combined. In the photosensitive resin composition of the present invention, a coloring matter such as a dye or a pigment may be used in addition to the above components. As such a coloring material, for example, indigo green, crystal violet, methyl orange, nile blue 2B, Victoria blue, malachite green, basic blue 2, and diamond green Wait. Further, a color developer may be added to the photosensitive resin composition of the present invention to provide a visible image by exposure. As such a color developing agent, a combination of a leuco dye or a fluorane dye and a halogen compound can be mentioned. As far away halogen compounds, bromopentane, bromoisopentane, brominated isobutylene, ethylene bromide, diphenylmethyl bromide, benzyl bromide, dibromomethane, tribromomethylphenylsulfone, tetrabromo Carbon, tris(2,3-dibromopropyl)phosphate, trichloroacetamide, iodopentane, iodine isobutane, trichloro-2,2_bis(p-phenyl)ethane, six Ethyl chloride, chlorinated triazine compounds, and the like. The amount of the coloring matter and the color developing agent is preferably 0.01 to 1% by mass in the photosensitive resin composition. From the viewpoint of recognizing sufficient coloring property (color rendering property), it is preferably 〇〇1% by mass or more, and it is preferable from the viewpoint of maintaining the contrast between the exposed portion and the unexposed portion and maintaining storage stability. It is 1 〇 mass% or less. Further, in order to improve the thermal stability of the photosensitive resin composition of the present invention, 128769.doc -23-200846825, storage stability, it is preferred that the photosensitive resin composition contains a free radical polymerization inhibitor and benzene. And at least one or more compounds selected from the group consisting of triazoles and carboxybenzotriazoles. As for such a radical polymerization inhibitor, for example, p-methoxyl 35, p-benzoic acid, o-benzotriene, naphthylamine, and t-butyl phthalate are desired: cuprous chloride, 2, 6-di(t-butyl)-p-A Chu-butyl f-methylene bis(4-methyl-.6-dibutyl butyl), 2,2,-methylenebis(4-ethyl -"Sancha), subvorcyl phenyl amide amine salt, and diphenyl nitrosamine. Further, as for the benzotris, for example, 1,2,3-benzotrienyl, 2,3-benzotris, bis(tetra)ethyl-benzotriazole, and bis (N_2_B) It? I, * Earth-based T-based-1, 2, 3-cardiac 2-ethylhexyl) aminomethylene triterpenoid, and bis(N-2-carbylethyl), methylopen, and the like. ·Meso soil_1,2,3-benzotrisole and 'for carboxybenzotriazoles, benzotris-m,2,3-benzene exemplified: contigs-1,2,3· A benzylidene benzotrisole, and a ν, ν (_' Ν di-diethyl) amine ethyl carboxy benzotriazole, and the like. , monoethylhexyl) amine radical polymerization inhibitor, benzotriene addition amount, better, and several groups of benzotrisole "" on the photosensitive tree wax group, the amount is better It is the viewpoint of 〇〇1 旦%%, storage stability: the amount is preferably 3; the amount: =, the sensitivity is maintained in order to improve the color tone stability of the photosensitive sensation composition of the present invention. Also, 128769.doc -24- 200846825 A phosphite hydrate compound can be contained in the photosensitive resin composition. As for the phosphite citrate compound, for example, 2, 4, 8 is calculated as a fourth (t-butyl group), 6 cases are 3_methyl_4_hydroxy_5_second, and its butyl group is a butyl group. Diphenyl[d,f][l,3,2]: apo-phosphonium, 2 2-methylene 雔μ 6 / ώ 暴 (4,6_2 (t-butyl) Phenyl)octyl ylide, bis (2 4 _ r 筮 = η - #, μ t , mono- butyl) benzyl) pentaerythritol - diazoic acid 8 曰, two (2, 4 _ Di(t-butyl)phenyl)phosphite vinegar, 4,4,-butylene bis(3-methyl-6-t-butylphenyl-bis(tridecyl)phosphite, different

亞丙基-二(苯酚烷基)亞磷酸醋或三異癸基亞磷酸醋。添加 亞磷酸酯化合物時之添加量為0.01〜5質量%。 本發明之感光性樹脂組合物中,視需要亦可含有塑化 劑。至於此種塑化劑,例如可舉出:f乙二醇、聚丙二 醇、聚氧丙烯聚氧乙烯基醚、聚氧乙烯單甲基醚、聚氧丙 稀單曱基⑽、聚氧乙烯聚氧丙烯單甲基鱗、聚氧乙婦單乙 基醚、聚氧丙烯單乙基醚、聚氧乙烯聚氧丙烯單乙基醚等 之二㈣類;鄰苯二甲酸二乙醋等之鄰笨二曱酸醋類;鄰 甲苯磺醯胺、對曱苯磺醯胺;檸檬酸三丁酿、檸檬酸三乙 酿、乙醯檸檬酸三乙醋、乙醯檸檬酸三正丙醋、乙醯檸檬 酸三正丁 |旨。 作為添加塑化劑時之添加量’較好的是感光性樹脂组合 物中含有5〜50質*%,1好的是5〜3〇質量%。就抑制顯影 時間的延遲、或者對硬化膜賦予柔軟性之觀點而言,較好 的是5質量%以上’又’就抑制硬化不足或冷流(』fi〇w) 之觀點而言,較好的是50質量%以下。 <感光性樹脂組合物調和液> 128769.doc -25- 200846825 本發明之感光性樹脂組合物,亦可制Λ、、& 衣成添加有溶劑之感 光性樹脂組合物調和液。至於適合的、、女卞丨 旳,合劑,可舉出:以甲 基乙基蒙I (ΜΕΚ)為代表之酮類;以及甲 、乙醇及異丙醇 等之醇類。較好的是,將溶劑添加於减 4九性樹脂組合物 中,以使感光性樹脂組合物調和液 饮 < 黏度於25°C下為 500〜4000 mPa.sec 〇 <感光性樹脂積層體> 感光性樹脂積層體包含由感光性樹脂組合物所構成之感 光性樹月旨層及支持體。可將感光性樹脂組合物積層於支持 體上而製成感光性樹脂積層體。χ,視f要,亦 性樹脂層之與支持體相反側之表面上具有保護層。 作為此處所使用之支持體,較理想的是使自曝光光源所 射出的光透過之透明者。至於此種支持體,可舉出··聚對 苯二甲酸乙二醋薄膜、聚乙婦醇薄膜、聚氯乙婦薄膜、氯 乙烯共聚物薄膜、聚偏氯乙烯薄膜、偏氯乙烯共聚合薄 膜、聚甲基丙烯酸甲酯聚合物薄膜、甲基丙烯酸甲酯共聚 物薄膜、聚笨乙烯薄膜、笨乙烯共聚物薄膜、聚丙烯腈; 膜、聚酸胺薄膜、及纖維素衍生物薄膜等。該等支持體視 需要亦可使用經延伸者。較好的是霧度為5以下者。支持 體之厚度較薄,則於圖像形成性及經濟性之方面較為有 利就必/員維持強度等之觀點而言,可較好地使用厚= 1〇〜30 μιη者。 又马 又’感光性樹脂積層體中所使用之保護層之重要特性 為,保護層與感光性樹脂層的密著力充分地小於支持體與 128769.doc -26- 200846825 感光性樹脂層的密著力,因而可容易將其剝離。例如,可 較好地使用聚乙烯薄膜、及聚丙烯薄膜等作為保護層。 又’可使用日本專利特開昭59·2()2457號公報所揭示之刻 離性優異之薄膜°保護層之膜厚較好的是10〜10G μηι,更 好的是10〜50 μπι。 本發明之感光性樹脂積層體中之感光性樹脂層之厚度, 較好=是5〜⑽卿,更好的是7〜6〇,。厚度愈薄則解析Propylene-bis(phenol alkyl) phosphite vinegar or triisodecyl phosphite. The amount of addition of the phosphite compound is 0.01 to 5% by mass. The photosensitive resin composition of the present invention may further contain a plasticizer as needed. As such a plasticizer, for example, f ethylene glycol, polypropylene glycol, polyoxypropylene polyoxyethylene ether, polyoxyethylene monomethyl ether, polyoxypropylene monothiol (10), polyoxyethylene polymerization can be mentioned. Two or four kinds of oxypropylene monomethyl scale, polyoxyethylene monoethyl ether, polyoxypropylene monoethyl ether, polyoxyethylene polyoxypropylene monoethyl ether, etc.; Stupid bismuth citrate; o-toluene sulfonamide, p-toluene sulfonamide; tributyl citrate, triethyl citrate, ethyl citrate triacetate, ethyl citrate tri-n-propyl vinegar,醯 citric acid tri-n-butyl | The amount of addition in the case of adding a plasticizer is preferably from 5 to 50% by mass of the photosensitive resin composition, and preferably from 5 to 3% by mass. From the viewpoint of suppressing the delay of the development time or imparting flexibility to the cured film, it is preferred that 5% by mass or more is further suppressed from the viewpoint of insufficient hardening or cold flow ("fi〇w"). It is 50% by mass or less. <Photosensitive Resin Composition Conditioning Liquid> 128769.doc -25- 200846825 The photosensitive resin composition of the present invention may be prepared by mixing a photosensitive resin composition-containing solution containing a solvent. As for the suitable conjugates, the ketones represented by methyl ethyl ketone I (ΜΕΚ); and the alcohols such as methyl alcohol, ethanol and isopropyl alcohol. Preferably, a solvent is added to the minus-nine resin composition to adjust the photosensitive resin composition to a liquid solution < viscosity at 25 ° C of 500 to 4000 mPa·sec 〇 < photosensitive resin laminate Body The photosensitive resin laminate includes a photosensitive resin layer and a support composed of a photosensitive resin composition. The photosensitive resin composition can be laminated on a support to form a photosensitive resin laminate. χ, depending on the surface of the resin layer, the surface opposite to the support has a protective layer. As the support used herein, it is preferable to transparently transmit the light emitted from the exposure light source. As such a support, a polyethylene terephthalate film, a polyglycol film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyvinylidene chloride film, a vinylidene chloride copolymerization may be mentioned. Film, polymethyl methacrylate polymer film, methyl methacrylate copolymer film, polystyrene film, stupid ethylene copolymer film, polyacrylonitrile; film, polyamine film, cellulose derivative film, etc. . These supporters may also use extensions as needed. It is preferred that the haze is 5 or less. When the thickness of the support is thin, it is advantageous in terms of image formation property and economic efficiency, and it is preferable to use thickness = 1 〇 30 30 μm. An important characteristic of the protective layer used in the photosensitive resin laminate is that the adhesion between the protective layer and the photosensitive resin layer is sufficiently smaller than the adhesion of the support to the photosensitive resin layer of 128769.doc -26- 200846825 Therefore, it can be easily peeled off. For example, a polyethylene film, a polypropylene film or the like can be preferably used as the protective layer. Further, the film thickness of the film protective layer which is excellent in the etchability as disclosed in Japanese Laid-Open Patent Publication No. SHO-59-2() No. 2457 is preferably 10 to 10 G μη, more preferably 10 to 50 μm. The thickness of the photosensitive resin layer in the photosensitive resin laminate of the present invention is preferably from 5 to 10, more preferably from 7 to 6 Å. The thinner the thickness, the resolution

度愈高,又,厚度愈厚則硬化膜的強度愈高,因此可視用 途作適當選擇。 依序將支持體、感光性樹脂層、及視需要將保護層積層 而製成本發明之感光性樹脂積層體的方法,可採用習知的 方去。例如,預先將感光性樹脂層中所使用之感光性樹脂 組合物製成上述感光性樹脂組合物調和液,首先使用棒式 塗佈機或輥式塗佈機將調合液塗佈於支持體上再進行乾 ^ 而將由該感光性樹脂組合物所構成之感光性樹脂層積 層於支持體上。 曰' /、人視需要,可藉由使用積層機將保護層積層於該感 光性樹脂層上,而製成感光性樹脂積層體。 <光阻圖案形成方法> 使用本發明之感光性樹脂積層體之光阻圖案,可藉由包 括積層步驟、曝光步驟、及顯影步驟之步驟而形成。以下 表示具體方法之^一例。 首先’使用積層機實行積層步驟。於感光性樹脂積層體 具有保護層之情形時,將保護層剝離,然後以積層機將感 128769.doc -27- 200846825 光性樹脂層加熱壓接於基板表面上而進行積層。此時,感 光卜树月曰層可僅積層於基板表面之單面上,亦可視需要積 層於兩面上。此時之加熱溫度一般為40〜160°C。又,藉由 進订一 _人以上的該加熱壓接,而使得所獲得光阻圖案與基 , 之詩性提高。此時,壓接可使用具備二聯報之二段式 積層機來進行,亦可重複通過報若干次而進行壓接。 其次,使用曝光機實行曝光步驟。必要時,將支持體剝 φ _,通過光罩利用活性光進行曝光。曝光量係、根據光源照 度及曝光時間而決定。亦可使用光量計測定曝光量。 於曝光步驟中,可採用進行直接微影之曝光方法。進行 直接微影之曝光方法中,不使用光罩,藉由直接微影裝置 於基板上進行曝光。至於光源,可使用波長35〇〜4〗〇 之 半1體雷射或超高壓水銀燈等。微影圖案係由電腦控制, 此時之曝光量係由曝光光源的照度及基板的移動速度決 定。 # 其’人’使用顯影裝置實行顯影步驟。曝光後,於感光性 树月曰層上具有支持體之情形時將其去除。冑而,使用由驗 性水溶液構成之顯影液將未曝光部顯影去除,獲得光阻圖 ^ 像。作為鹼性水溶液,較好的是NaWO3、或K2C〇3等之水 ,溶液。該等係根據感光性樹脂層之特性而選擇,一般使用 0·2 2貝里/0/辰度之Na2C〇3水溶液。該鹼性水溶液中,亦 可此入表面活性劑、消泡劑、用以促進顯影之少量有機溶 劑等。再者’較好的是’顯影步驟中該顯影液之溫度在 20〜40°C之範圍内保持於固定溫度。 128769.doc -28 - 200846825 藉由上述步驟而獲得光阻圖宰, M ^ 視锏况,亦可進一步實 行H)〇~3m:之加熱步驟。加熱時間較好的是…鐘〜齡 鐘。藉由實施該加熱步驟’能夠進一步提高耐化學性。加 熱時,可使用熱風、紅外線、或遠紅外線等方式之加孰 爐。 ”、、 又,視情況,亦可進一步會淪岡 /貝施圖案化後之曝光步驟。藉 由實施該曝光步驟’能夠進—步提高耐化學性。 <印刷電路板之製造方法>The higher the degree, the higher the thickness, the higher the strength of the cured film, so that it can be appropriately selected for visual use. A method of forming the photosensitive resin layer of the present invention by sequentially supporting the support, the photosensitive resin layer, and, if necessary, the protective layer, may be carried out by a conventional method. For example, the photosensitive resin composition used in the photosensitive resin layer is prepared as the above-mentioned photosensitive resin composition conditioning liquid, and first, the preparation liquid is applied onto the support using a bar coater or a roll coater. Further, the photosensitive resin composed of the photosensitive resin composition is laminated on the support.曰', a person can form a photosensitive resin laminate by laminating a protective layer on the photosensitive resin layer by using a laminator. <Photoresist Pattern Forming Method> The photoresist pattern using the photosensitive resin laminate of the present invention can be formed by a step including a lamination step, an exposure step, and a development step. The following shows an example of a specific method. First, the lamination step is carried out using a laminator. In the case where the photosensitive resin laminate has a protective layer, the protective layer is peeled off, and then a layered machine is used to laminate the sensitized 128769.doc -27-200846825 optical resin layer onto the surface of the substrate. At this time, the photosensitive layer can only be laminated on one surface of the substrate surface, and can be laminated on both sides as needed. The heating temperature at this time is generally 40 to 160 °C. Further, by ordering the heating and pressure bonding of one or more persons, the poetic property of the obtained photoresist pattern and the base is improved. In this case, the crimping can be carried out using a two-stage laminator with a two-stage report, or it can be repeated by repeating the report several times. Next, an exposure step is performed using an exposure machine. If necessary, the support strips φ _ and exposes it with active light through a photomask. The exposure amount is determined by the illumination of the light source and the exposure time. The amount of exposure can also be measured using a light meter. In the exposure step, an exposure method for direct lithography can be employed. In the direct lithography exposure method, exposure is performed on a substrate by a direct lithography apparatus without using a photomask. As for the light source, a half-body laser or an ultra-high pressure mercury lamp having a wavelength of 35 〇 to 4 〇 can be used. The lithography pattern is controlled by a computer, and the exposure amount at this time is determined by the illuminance of the exposure light source and the moving speed of the substrate. #的'人' performs a developing step using a developing device. After exposure, it is removed when there is a support on the photosensitive tree layer. Further, the unexposed portion was developed and removed using a developing solution composed of an aqueous test solution to obtain a photoresist pattern. As the alkaline aqueous solution, water such as NaWO3 or K2C〇3 or the like is preferred. These are selected according to the characteristics of the photosensitive resin layer, and a Na2C〇3 aqueous solution of 0·2 2 Berry/0/time is generally used. In the alkaline aqueous solution, a surfactant, an antifoaming agent, a small amount of an organic solvent for promoting development, and the like may be added. Further, it is preferable that the temperature of the developer in the developing step is maintained at a fixed temperature within the range of 20 to 40 °C. 128769.doc -28 - 200846825 By the above steps, the photoresist pattern is obtained, and the heating step of H) 〇~3m: can be further carried out depending on the condition. The heating time is better...clock ~ age clock. The chemical resistance can be further improved by carrying out the heating step'. When heating, a hot air, infrared, or far infrared ray can be used. Further, depending on the case, the exposure step after the patterning of the 沦 / / Beishi can be further advanced. The chemical resistance can be further improved by performing the exposure step. <Manufacturing method of printed circuit board>

本發明之印刷電路板之製造方法,係藉由上述光阻圖孝 形成方法於作為基板之㈣積層板或可撓性基板上形成光 阻圖案後,經由以下步驟而實行。 首先μ行對由於顯影而露出之基板的銅面進行钱刻之 步驟、或進行電鍍之步驟笠 乂驟專使用已知方法形成導體圖案之 步驟。The method for producing a printed wiring board according to the present invention is carried out by forming a photoresist pattern on a (4) laminated board or a flexible substrate as a substrate by the above-described photoresist pattern forming method. First, a step of performing a step of etching a copper surface of a substrate exposed by development or a step of performing electroplating is carried out by using a known method to form a conductor pattern by a known method.

於電鍍步驟中,可使用銅電鍍浴 電鍵浴。 亦可使用氰化貴金屬 至於氰化貴金屬電鍍之貴金屬,例如有金、銀。 本案發明中’可較好地使用氰化金電鑛浴。 於鼠化金電鑛之情形時,電鑛液含有氰錯合物,將電鍍 液分類為驗性氰化浴(離㈠3)、中性氰化浴(ρΗ6〜8 5)、 酸性氛化浴_〜6)。該等電鍍液可使用市售者。 本案發明之感光性樹脂組合物可耐中性〜鹼性之氰化貴 金屬電錢。 八' 貝行利用鹼性強於顯影液的水溶液將光阻圖案自 128769.doc -29- 200846825 基板上剝離之剝離步驟,而獲得所需之印刷電路板。對於 剝離用之鹼性水溶液(以下亦稱為「剝離液」)並無特別限 制,一般使用2〜5質量%濃度之NaOH或KOH之水溶液。剝 離液中亦可加入少量水溶性溶劑。再者,較好的是,剝離 步驟中該剝離液之溫度為40〜70。〇之範圍。 <具有凹凸圖案之基材之製造方法>In the electroplating step, a copper electroplating bath can be used. It is also possible to use a cyanidation precious metal as a precious metal for cyanidation of precious metal plating, such as gold or silver. In the invention of the present invention, a cyanide gold electric ore bath can be preferably used. In the case of the ratification of gold and electric ore, the electromineral liquid contains a cyanide complex, and the electroplating solution is classified into an experimental cyanide bath (from (1) 3), a neutral cyanide bath (ρΗ6 to 8 5), and an acidic bath. _~6). These plating solutions can be used commercially. The photosensitive resin composition of the present invention is resistant to neutral to alkaline cyanide precious metal electricity. The eight' shell line utilizes a stripping step in which the photoresist pattern is peeled off from the 128769.doc -29-200846825 substrate by an aqueous solution stronger than the developer to obtain the desired printed circuit board. The alkaline aqueous solution for peeling (hereinafter also referred to as "peeling liquid") is not particularly limited, and an aqueous solution of NaOH or KOH having a concentration of 2 to 5% by mass is generally used. A small amount of a water-soluble solvent may also be added to the stripping solution. Further, it is preferred that the temperature of the stripping liquid in the stripping step is 40 to 70. The scope of 〇. <Method for producing a substrate having a concave-convex pattern>

根據上述光阻圖案形成方法,可將光阻圖案作為藉由噴 砂方法對基板實施加工時之保護遮罩構件使用。 至於基板,可舉出··玻璃、矽晶圓、非晶矽、多晶矽、 陶兗、藍寶石、金屬材料m與上述光阻圖案形成方 法同樣之方法’於該等玻璃等基板上形成光阻圖案。其 後’經由自所形成的光阻圖案上噴上噴射材料再切削成’目 標深度之噴砂處理㈣、錢㈣i離液特殘存於基板上 的光二圖案部分自基板上去除之剝離步驟,可製成基板上 -⑼#凹凸圖案之基材。上述噴砂處理步驟中所使用 之噴射材料係使用公知去 △夫者例如使用Sic、Si02、Al2〇3、According to the above-described photoresist pattern forming method, the photoresist pattern can be used as a protective mask member when the substrate is processed by a sandblasting method. Examples of the substrate include a glass, a germanium wafer, an amorphous germanium, a polycrystalline germanium, a ceramic germanium, a sapphire, and a metal material m, which are formed in the same manner as the above-described photoresist pattern forming method, and a resist pattern is formed on the substrate such as the glass. . Thereafter, a stripping step is performed by spraying the blast material onto the formed resist pattern and cutting it into a 'target depth blasting treatment (4), and money (4) is removed from the substrate by the liquid-pattern portion remaining on the substrate. A substrate on the substrate-(9)# concave-convex pattern. The spray material used in the above blasting step is a known one, for example, Sic, SiO 2 , Al 2 〇 3,

CaC〇3、Zr〇2、姑殖—. — 不鏽鋼等2〜100 μηι左右之微粒。 上述藉由噴砂方、本而目 套而/、有凹凸圖案之基材之製造方法, 可使用於平板顯千突、# 匕貝^的隔板之製造、有機EL之玻璃罩加 工、石夕晶圓之開:τ ^ 17 、及陶瓷之扎針加工等。又,可利 用於強介電質膜以及CaC〇3, Zr〇2, auxilial—. — 2~100 μηι of particles such as stainless steel. The method for producing a substrate having a embossed surface, a cover sheet, and a concave-convex pattern can be used for the manufacture of a separator for a flat panel, a mussel, a glass cover for an organic EL, and a stone eve. Wafer opening: τ ^ 17 , and ceramic needle processing. Also, it can be used for strong dielectric films and

、由貝I屬、貴金屬合金、高熔點 金屬反同像點金凰彳μ入A 夕制、止 &物所、、且成群中的金屬材料層之電極 之製造。 <半導體封裝體之製造方法> 128769.doc -30. 200846825 本發明之半導體封裝體之製造方法中,藉由以下步驟將 為之电路形成完成之晶片加以封裝’藉此製造半導 體封裝體。 $Manufactured from the electrode of the metal material layer in the group of the genus, the noble metal alloy, and the high-melting-point metal. <Manufacturing Method of Semiconductor Package> 128769.doc -30. 200846825 In the method of manufacturing a semiconductor package of the present invention, a wafer for forming a circuit is packaged by the following steps, thereby manufacturing a semiconductor package. $

|先’對藉由顯影而獲得之光阻圖案附著基材的基材金 屬已露出之部分實施硫酸銅電鑛或者上述氰化貴金屬電 =,而形成導體圖案。其後,實行以與上述印刷電路板之 製造方法同樣之方法將光阻圖案剝離之剥離步驟,進而, 餘狀電鍍料的部分實行心去除薄金屬層之㈣,再 女裝上述晶片,獲得所需之半導體封裝體。 <凸塊之製造方法> :發明之凸塊之製造,係為了安裝作為lsi之電路形成 已完成的晶片而進行,係藉由下述步驟製造。 百先,對藉由顯影而獲得之光阻圖案附著基材的基材金 屬已露出之部分實施硫酸銅電鍍或者上述氰化貴金屬電 鍍’而形成導體圖案。其後,實行以與上料刷電路板之 =造方法同樣之方法將光阻圖案剝離之剝離步驟,進而, 實行藉由蝕刻將柱狀電鍍以外部分的薄金屬層去除之步 驟,藉此獲得所需凸塊。 ^ <導線架之製造方法> 本發明之導線架之製造,係藉由上述綠圖案形成方法 於作為基板之金屬板例如銅、鋼合金、或鐵系合金上形成 光阻圖案後,經由以下步驟而進行。 首先’實行對由於顯影而露出的基板進行餘刻以形成導 體圖案之步驟。其後,實行以與上述印刷電路板之製造方 128769.doc -31 - 200846825 法同樣之方法將光阻圖㈣離之剝離步驟 導線架。 筏件所需之 [實施例] 以下,具體說明本發明之實施形態之例。 (實施例1〜11、比較例J) f先’說明實施例及比較例之評價用樣品之製作 繼而將所獲得樣品之評價方法及其評價結果示於表/,First, a portion of the substrate metal to which the resist pattern attached to the substrate obtained by development is exposed is subjected to copper sulfate ore or the above-mentioned cyanated noble metal to form a conductor pattern. Thereafter, a peeling step of peeling the photoresist pattern in the same manner as in the above-described method of manufacturing a printed circuit board is carried out, and further, a part of the residual plating material is subjected to a core removal of the thin metal layer (4), and the wafer is obtained by the woman. A semiconductor package is required. <Manufacturing Method of Bumps> The manufacture of the bumps of the invention is carried out by mounting a wafer as a circuit of 1si to form a completed wafer, and is manufactured by the following procedure. In the first place, the portion of the substrate metal to which the photoresist pattern obtained by development is adhered is subjected to copper sulfate plating or the above-described cyanated noble metal plating to form a conductor pattern. Thereafter, a peeling step of peeling off the photoresist pattern in the same manner as in the method of fabricating a printed circuit board is performed, and further, a step of removing a thin metal layer other than the columnar plating by etching is performed. Required bumps. ^ <Method of Manufacturing Lead Frame> The lead frame of the present invention is manufactured by forming a photoresist pattern on a metal plate such as copper, a steel alloy, or an iron-based alloy as a substrate by the above-described green pattern forming method. The following steps are taken. First, the step of engraving the substrate exposed by development to form a conductor pattern is carried out. Thereafter, the photoresist pattern (4) is peeled off from the lead frame in the same manner as in the above-mentioned method of manufacturing the printed circuit board, 128769.doc - 31 - 200846825. [Examples of the Invention] Hereinafter, examples of the embodiments of the present invention will be specifically described. (Examples 1 to 11 and Comparative Example J) f First, the production of the samples for evaluation of the examples and the comparative examples will be described. Next, the evaluation methods of the obtained samples and the evaluation results thereof are shown in Table/,

將表1中以簡稱表示之感光性樹脂組合物調和液 料成分B-1〜K-1之名稱示於表2。 1 ·評價用樣品之製作 實施例及比較例之感光性樹脂積層體係以如下方式穿j 作0 、 &lt;含緩基黏合劑之製作&gt; 首先’準備下述所示之黏合劑。 (合成例) 於氮氣環境中向裝備有氮氣導入口、攪拌翼、戴氏冷凝 器(Dimroth condenser)及溫度計之1〇〇〇⑹四口燒瓶中加入 甲基乙基酮300 g,將熱水浴的溫度提高至80。&lt;3。繼而,以 各自為30/20/50(質量比)之組成比,製備曱基丙烯酸/苯乙 烯/曱基丙烯酸苄酯之固形分總量為4〇〇 g之溶液。製作於 曱基乙基酮30 g中溶解有偶氮雙異丁腈3 g之溶液,一面攪 拌一面用2小時將該溶液滴加至上述製備溶液中。其後加 熱攪拌6小時(一次聚合)。然後,每4小時分三次滴加於曱 基乙基_30 g中溶解有偶氮雙異丁腈6 g之溶液,加熱攪拌 128769.doc -32- 200846825 5小時(二次聚合)。繼而,添加甲基乙基酮24〇 &amp;,自燒瓶 中取出聚合反應物’而獲得黏合劑溶液。此時之重量 平均分子量為5.5萬’分散度為2.6,酸當量為29()。所獲得 黏合劑溶液B-1中之樹脂固形分為41質量%。 同樣地,以使甲基丙烯酸/苯乙烯/甲基丙浠酸甲醋 25/25/50(重量比)之方式,合成黏合劑溶液Μ。將聚合 性物質之組成比及所獲得黏合劑溶液之樹脂固形分、重量 平均分子量、分散度、酸當量示於以下。 黏合劑溶液B-1:甲基丙烯酸/苯乙烯/甲基丙烯酸节醋 =30/期0(重量比)(重量平均分子量55萬、分散度u、酸 當量携、固形分濃度為41質量%之曱基乙基酮溶液 黏合劑溶液B_2:甲基丙稀酸/苯乙烯/甲基丙烯酸甲醋 =25/25/50(重量比)(重量平均分子量5()萬、分散度η、酸 當量344、固形分濃度為41質量%之甲基乙基嗣溶液)。 &lt;感光性樹脂積層體之製作&gt; 將表1所示組成之感光性樹脂組合物及溶劑加以充分攪 拌、混合,製成感光性樹脂組合物調和液,利用棒式塗佈 機將該調和液均勾塗佈於作為支持體之16 _厚之聚對苯 二甲酸乙二S旨薄膜的表面上’於抑乾燥機中進行4分鐘 乾燥而形成感光性樹月旨層。感光性樹脂層之厚度為 繼而,於感光性樹脂屄夕土 曰層之未積層聚對苯二甲酸乙二酯薄 膜的表面上,積層作為保護層之23 μηι厚之聚乙烯薄膜, 而獲得感光性樹腊積層體。 &lt;基板表面處理&gt; 128769.doc -33- 200846825 解析度評價用基板、密著性評價用基板、光阻材料剝離 性評價用基板、對鹼性氰化貴金屬電鑛浴之耐性評價用基 板,係使用積層有35 μπι壓延銅箔之1.6 mm厚之銅箔積層 板,對表面實行濕式拋光輥研磨(3M(股)製造,Scotch-Brite(註冊商標)HD# 600,通過2次)。 &lt;積層&gt; 一面將感光性樹脂積層體之聚乙烯薄膜剝離,一面藉由 熱輥積層機(旭化成電子(股)製造,AL-70)以105°C的報溫 度積層於經整面處理並預熱至6〇。〇之銅箔積層板上。空氣 壓力設為0.3 5 MPa,積層速度設為丨.5 m/min。 &lt;曝光&gt; 將感光性樹脂層之評價所需要的圖案光罩置於作為支持 體之水對本一甲酸乙二酯薄膜上,利用超高壓水銀燈 (0RC製作所製造,HMW_2〇1KB)以5〇 mJ/cm2之曝光量進 行曝光。 &lt;顯影&gt; 將聚對苯二甲酸乙二酯薄膜剝離後,噴射3〇。〇之1質量 %Na2C〇3水溶液達特定時間,將感光性樹脂層的未曝光部 分溶解去除。此時,將完全溶解未曝光部分的感光性樹脂 層所需要之最少時間作為最小顯影時間。 &lt;電鍍前處理&gt; 於40。(:下,將顯影後之對鹼性氰化貴金屬電鍍浴之耐性 评仏基板於酸性除脂1^;^(1〇%水溶液,ADTEX Japan(股) 製造)浴中浸潰4分鐘。進行水洗後,於室溫下於1〇%硫酸 128769.doc -34- 200846825 水溶液中浸潰2分鐘。 &lt;氰化金電鍍浴&gt; 使用氰化金鉀20 g/L、磷酸二氫鈉丨5 g/L、磷酸氫二鈉 20 g/L之組成之電鍍浴,以電流密度〇·5 A/m2、70°C之條件 進行10分鐘電鍍。 &lt;剝離&gt; 向經電鏡處理之評價基板噴射⑽^、3質量。/()之氫氧化鈉 水溶液,剝離去除光阻膜。 2·評價方法 (1) 解析度評價 通過曝光部與未曝光部的寬度為1之比率之線圖案光 罩,對積層後經過15分鐘之解析度評價用基板進行曝光。 以取小顯影時間2倍之顯影時間進行顯影,將正常形成有 硬化光阻線之最小光罩線寬作為解析度之值,以如下方式 進行分級。 ◎ · %析度之值為20 μπι以下。 〇 :解析度之值超過20μηι、為25 μπι以下。 χ ··解析度之值超過25 μιη。 (2) 密著性評價 • 1〇〇之比率之線圖案The names of the photosensitive resin composition blending liquid components B-1 to K-1 indicated by the abbreviation in Table 1 are shown in Table 2. (1) Preparation of Samples for Evaluation The photosensitive resin layered systems of the examples and the comparative examples were produced as follows: &lt;Production of a base-containing adhesive; &gt; First, the following adhesives were prepared. (Synthesis Example) 300 g of methyl ethyl ketone was added to a 4-neck (6) four-necked flask equipped with a nitrogen gas introduction port, a stirring blade, a Dimroth condenser, and a thermometer in a nitrogen atmosphere, and hot water was added. The bath temperature was increased to 80. &lt;3. Then, a solution having a total solid content of methacrylic acid/styrene/mercapto benzyl acrylate of 4 〇〇 g was prepared at a composition ratio of 30/20/50 (mass ratio). A solution of 3 g of azobisisobutyronitrile dissolved in 30 g of mercaptoethyl ketone was prepared, and the solution was added dropwise to the above preparation solution over 2 hours while stirring. Thereafter, the mixture was heated and stirred for 6 hours (primary polymerization). Then, a solution of 6 g of azobisisobutyronitrile dissolved in mercaptoethyl_30 g was added dropwise three times every 4 hours, and stirred under heating for 128 769.doc -32 - 200846825 for 5 hours (secondary polymerization). Then, methyl ethyl ketone 24 〇 &amp; was added, and the polymerization reactant was taken out from the flask to obtain a binder solution. At this time, the weight average molecular weight was 55,000', the degree of dispersion was 2.6, and the acid equivalent was 29 (). The resin solid content in the obtained binder solution B-1 was 41% by mass. Similarly, the binder solution was synthesized in such a manner that methacrylic acid/styrene/methylpropionic acid methyl vinegar 25/25/50 (weight ratio). The composition ratio of the polymerizable substance and the resin solid content, weight average molecular weight, degree of dispersion, and acid equivalent of the obtained binder solution are shown below. Binder solution B-1: methacrylic acid / styrene / methacrylic acid vinegar = 30 / period 0 (weight ratio) (weight average molecular weight 550,000, dispersion u, acid equivalent, solid content concentration of 41% by mass Glutamine ethyl ketone solution binder solution B_2: methyl acrylate / styrene / methyl methacrylate = 25 / 25 / 50 (weight ratio) (weight average molecular weight 5 () million, dispersion η, acid Equivalent 344, a methyl ethyl hydrazine solution having a solid content concentration of 41% by mass. &lt;Production of photosensitive resin laminate&gt; The photosensitive resin composition having the composition shown in Table 1 and a solvent were sufficiently stirred and mixed. The photosensitive resin composition is blended, and the solution is applied to the surface of a 16-th thick polyethylene terephthalate film as a support by a bar coater. The photosensitive resin layer was formed by drying for 4 minutes, and the thickness of the photosensitive resin layer was subsequently laminated on the surface of the uncovered polyethylene terephthalate film of the photosensitive resin layer. Protective layer of 23 μη thick polyethylene film to obtain a photosensitive tree <Layer layer surface treatment> &lt;Substrate surface treatment&gt; 128769.doc -33- 200846825 The substrate for evaluation evaluation, the substrate for adhesion evaluation, the substrate for evaluation of peeling property of photoresist, and the alkaline cyanide noble metal electric ore bath The substrate for resistance evaluation was a wet-rolled roll-polished (3M (manufactured), Scotch-Brite (registered trademark) HD# 600, using a 1.6 mm-thick copper foil laminate laminated with 35 μm of rolled copper foil. When the polyethylene film of the photosensitive resin laminate is peeled off, the laminate is laminated at a temperature of 105 ° C by a hot roll laminator (Al-70 manufactured by Asahi Kasei Electronics Co., Ltd.). After the whole surface treatment and preheating to 6 〇. The copper foil laminate board. The air pressure is set to 0.3 5 MPa, and the lamination speed is set to 丨.5 m/min. &lt;Exposure&gt; The photosensitive resin layer is The pattern mask required for the evaluation was placed on a water-to-nanoethylene glycol film as a support, and exposed to an exposure amount of 5 〇mJ/cm 2 using an ultrahigh pressure mercury lamp (manufactured by ORC, HMW 2 〇 1 KB). Developing &gt; peeling polyethylene terephthalate film Thereafter, the aqueous solution of 1% by mass of Na2C〇3 was sprayed for a specific period of time to dissolve and remove the unexposed portion of the photosensitive resin layer. At this time, the minimum time required to completely dissolve the photosensitive resin layer of the unexposed portion was obtained. As the minimum development time. &lt;Pre-plating treatment&gt; at 40. (:, after the development of the alkaline cyanide precious metal plating bath, the substrate is evaluated for acid degreasing 1 ^; ^ (1% aqueous solution, Made by ADTEX Japan (share)) soaked in the bath for 4 minutes. After washing with water, it was immersed in an aqueous solution of 1 〇% sulfuric acid 128769.doc -34-200846825 for 2 minutes at room temperature. &lt;Cyanide gold plating bath&gt; Electroplating bath using a composition of 20 g/L of potassium cyanide, 5 g/L of sodium dihydrogen phosphate, and 20 g/L of disodium hydrogen phosphate at a current density of 5·5 A /m2, 70 ° C conditions for 10 minutes plating. &lt;Peeling&gt; The substrate was sprayed with (10) and 3 masses by electron beam treatment. /() Aqueous sodium hydroxide solution, peeling off the photoresist film. 2. Evaluation method (1) Evaluation of the resolution The substrate for the resolution evaluation was carried out for 15 minutes after the lamination by the line pattern mask having the ratio of the width of the exposed portion and the unexposed portion to one. The development was carried out by taking a development time twice as long as the development time, and the minimum mask line width at which the hardened photoresist line was normally formed was taken as the value of the resolution, and classification was carried out in the following manner. ◎ · The value of % resolution is 20 μπι or less. 〇 : The resolution value exceeds 20μηι and is 25 μπι or less. χ ··The resolution value exceeds 25 μηη. (2) Adhesion evaluation • Line pattern of ratio of 1〇〇

128769.doc 通過曝光部與未曝光部的寬度為i : 光罩,對積層後經過15分鐘之密著七 光。以最小顯影時間2倍之顯影時間立 成有硬化光阻線之最小光罩綾嘗 ^ -35- 200846825 ◎•密著性之值為20 μιη以下。 〇·岔著性之值超過20 μιη,為25 μιη以下。 χ :密著性之值超過25 μιη。 (3) 光阻剝離性評價 通過具有6 cmx6 cm圖案之光罩,對積層壓後經過。分 鐘之光阻剝離性評價用基板進行曝光。以最小顯影時間刀2 倍之顯影時間進行顯影後,浸潰於50T:、3質量%之气氧化 鈉水溶液中,測定光阻膜被剝離之時間,以如下方式進疒 分級。 〇:剝離時間為60秒以下 △.剝離時間超過6 0秒、為12 0秒以下 x :剝離時間超過120秒 (4) 對驗性氰化貴金屬電鏟浴之耐性之評價 通過曝光部與未曝光部的寬度為丨:5之比率之線圖案光 罩’對積層後經過15分鐘之對鹼性氰化貴金屬電錄洛之 性評價用基板進行曝光,以最小顯影時間2倍之顯影時門 進行顯影,而獲得硬化光阻圖案。其後,以上述條件進疒 氰化金電鍍,進而剝離硬化光阻圖案。於光阻剝離德 光學顯微鏡觀察1 〇〇 μπι部分之金電錢線,以如下方式對带 鍍液耐性進行分級。 ◎:完全無電鍍液潛入、滲入,顯示良好的線。 〇:無電鍍液潛入,滲入之寬度未滿5 μιη。 △:無電鍍液潛入,滲入之寬度為5 μπι以上。 χ ·產生電鑛液潛入。 128769.doc -36 - 200846825 3.評價結果 將實施例及比較例之評價結果示於表1。 [表1]128769.doc The width of the exposed part and the unexposed part is i: the mask, and the light is sealed for 15 minutes after the lamination. The minimum mask with a hardened photoresist line is developed with a development time of 2 times the minimum development time. ^ -35- 200846825 ◎• The value of the adhesion is 20 μηη or less. The value of 岔·岔 is more than 20 μηη, which is 25 μηη or less. χ : The value of the adhesion is more than 25 μηη. (3) Evaluation of photoresist peeling property After passing through a laminate having a pattern of 6 cm x 6 cm, it was laminated. The substrate for the photoresist peeling evaluation of the minute was exposed. After developing with a development time of 2 times of the minimum development time, the film was immersed in a 50T:, 3% by mass aqueous sodium oxide solution, and the time during which the photoresist film was peeled off was measured, and classified in the following manner. 〇: peeling time is 60 seconds or less △. peeling time exceeds 60 seconds, is less than 120 seconds x: peeling time exceeds 120 seconds (4) Evaluation of the tolerance of the test cyanide precious metal electric shovel bath through the exposure part and not A line pattern mask having a width of 曝光:5 in the ratio of the exposure portion is exposed to the substrate for evaluation of the alkaline cyanide precious metal for 15 minutes after lamination, and the development time is 2 times the minimum development time. Development is carried out to obtain a hardened resist pattern. Thereafter, gold cyanide plating was carried out under the above conditions, and the hardened resist pattern was peeled off. The resistance of the plating solution was graded in the following manner by observing the gold wire of the 1 〇〇 μπι portion by the optical peeling optical microscope. ◎: The completely electroless plating solution sneaked in and infiltrated, showing a good line. 〇: The electroless plating solution is sneaked in, and the penetration width is less than 5 μιη. △: The electroless plating solution was infiltrated, and the infiltration width was 5 μπι or more. χ · Produce electric mineral liquid to sneak into. 128769.doc -36 - 200846825 3. Evaluation results The evaluation results of the examples and comparative examples are shown in Table 1. [Table 1]

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〇 1—4 1—^ &lt;Ν Ο m S d o o o ο 〇 〇 X ο ο ο »〇 •ο CN Ο cn s o d o o 5Q 〇 〇 〇 〇 〇 r—&lt; 〇 r—^ 1—4 »η Ο »η &lt;〇 »η 04 Ο m s d »〇 d o o ◎ ◎ 〇 ◎ ON 5 〇 F—* ^η &gt;η *〇 (Ν C&gt; m s d &gt;r&gt; d &gt; '&lt; o o ◎ ◎ 〇 ◎ 〇〇 螗 Ί&lt; 〇 r-H »〇 1C *η »〇 CN Ο cn s o »〇 o o o ◎ ◎ 〇 ◎ 卜 填 〇 1—1 ?-*H ο Ο ιη CN Ο m s o »〇 o o o ◎ ◎ 〇 ◎ Ό 〇 r-H ψ i ο ο wo &lt;Ν Ο m s d d o o ◎ ◎ 〇 ◎ {㈣ Ο ο ο »〇 *η »η (Ν Ο m s o u-i o o o ◎ ◎ 〇 ◎ 寸 Ο —&quot;Η ο ο ^η »〇 (Ν Ο m s d »n o d o 〇 5Q 〇 〇 〇 m Ο Ο ο »η (Ν Ο r^) s o »〇 o o o 〇 〇 〇 〇 (N Ο τ-Η τ—Η ο ο JO &gt;〇 in CN Ο m s o o o o »n cs 〇 〇 〇 〇 T i Ο r—t ο ο «ο (Ν Ο m s d d f—^ o o 〇 〇 〇 〇 ώ CN ώ τ—Η 1 S (Ν m 寸 ν〇 卜 00 〇\ έ ο 1 ^-Η } S (Ν » S CN Q (N Q ώ ii 令 Φ Φ Φ 每#冢 采+ _ _ 效 ^ | 铡.· 衡 趄 M, W 系 $黎 ^ &gt;pr ΐΐ ^ 128769.doc -38- 200846825〇 1-4 1-4 ^ S S S S η &lt;〇»η 04 Ο msd »〇doo ◎ ◎ 〇◎ ON 5 〇F—* ^η &gt;η *〇(Ν C&gt; msd &gt;r&gt; d &gt;'&lt; oo ◎ ◎ 〇 ◎ 〇 〇螗Ί&lt; 〇rH »〇1C *η »〇CN Ο cn so »〇ooo ◎ ◎ 〇◎ 卜填〇1—1 ?-*H ο Ο ιη CN Ο mso »〇ooo ◎ ◎ 〇◎ Ό 〇rH ψ wo wo dd dd dd dd dd dd dd dd Msd »nodo 〇5Q 〇〇〇m Ο Ο ο »η (Ν Ο r^) so »〇ooo 〇〇〇〇(N Ο τ-Η τ—Η ο ο JO &gt;〇in CN Ο msoooo »n cs 〇〇〇〇T i Ο r-t ο ο «ο (Ν Ο msddf—^ oo 〇〇〇〇ώ C N ώ τ—Η 1 S (Ν m 〇ν〇卜00 〇\ έ ο 1 ^-Η } S (Ν » S CN Q (NQ ώ ii Φ Φ Φ per #冢采+ _ _ 效^ | 铡.·衡趄M, W系$黎^ &gt;pr ΐΐ ^ 128769.doc -38- 200846825

【CN&lt;】 具有甲基丙烯酸/苯乙烯/甲基丙烯酸苄酯(聚合比為30/20/50)1組成、酸當量為290、重量平均分子量為5萬5千之共聚物之41質 量%(固形分)甲基乙基酮溶液 寸 翁. Φ 贫 φΐ Jfthj ψΒη f m _ ♦田. (η CN ϊη jj 41 ¥ δ 糾tO 你画 六亞曱基二異氰酸酯與加成有平均4莫耳之環氧乙烷的甘油二甲基丙烯酸酯之反應物 六亞甲基二異氰酸酯與加成有平均5莫耳之環氧丙烷的甘油二甲基丙烯酸酯之反應物 H- 裨 m τ-Η 牛 〇 η ν〇 ¢- Μ tO Η- Η 寸 餵歡 齧、1 、|拿 S- ^ Η* 棘 m 1—Η ό Η ν〇 裝 S- Ί 5 tnf η 餵漶 齧、1 \\ 4 δ s- ^ k 〇 六亞甲基二異氰酸酯與具有平均5莫耳的丙二醇鏈的單甲基丙烯酸酯之胺基曱酸酯化合物 六亞甲基二異氰酸酯與具有平均5莫耳的乙二醇鏈的單甲基丙烯酸酯之胺基甲酸酯化合物 六亞曱基二異氰酸酯與具有平均5莫耳的乙二醇單甲基丙烯酸酯鏈及平均9莫耳的丙二醇單甲基丙稀酸酯鏈之胺基甲酸酯化合物 於雙紛A的兩端各加成有平均5莫耳的環氧乙烷的聚乙二醇之二甲基丙烯酸酯(新中村化學公司製造BPE-500,製品名) 於雙紛A的兩端分別加成有平均2莫耳的環氧乙烷的聚乙二醇之二曱基丙烯酸酯(新中村化學公司製造BPE-200,製品名) 對加成有平均12莫耳之環氧丙烷的聚丙二醇進一步於兩端各加成平均3莫耳的環氧乙烷之聚伸烷基二醇之二甲基丙烯酸酯 對三羥甲基丙烷加成有平均3莫耳的環氧乙烷之三丙烯酸酯(新中村化學公司製造A-TMPT-3E0,製品名) 4-壬基苯基七乙二醇二丙二醇丙烯酸酯(日本油脂(股)製造,LS-100A) 4,4’-雙(二乙基胺基)二苯曱酮 2-(鄰氯苯基)-4,5_二苯基咪唑二聚物 鑽石綠 無色結晶紫 1-(2-二正丁基胺基甲基)-5-羧基苯并三唑與1-(2-二正丁基胺基甲基)-6-羧基苯并三唑之1 ·· 1混合物 T—^ PQ B-2 1 M-2 Μ-3 M-4 M-5 M-6 M-7 M-8 M-9 M-10 丨 Μ-11 Μ-12 τ-Η (Ν |d-i 1 1 D-2 1 r—&lt; 128769.doc -39- 200846825 [產業上之可利用性] 本發明可應用於印刷電路板之製造、可撓性印刷電路板 之製造、ic晶片搭載用導線架(以下稱為導線架)之製造、 金屬掩模製造等之金屬箔精密加工、BGA(球狀柵格陣列) 及CSP(晶片尺寸封裝)等半導體封裝體製造、以TAB(Tape Automated Bonding,捲帶自動接合)及 COF(Chip On , Film :將半導體1C搭載於薄膜狀之微細電路板上者)為代 表之捲帶基板之製造、半導體凸塊之製造、平板顯示器領 ® 域之ITO電極、定址電極或者電磁波遮罩等部件之製造。[CN&lt;] 41% by mass of a copolymer of methacrylic acid/styrene/benzyl methacrylate (polymerization ratio: 30/20/50), a composition of an acid equivalent of 290, and a weight average molecular weight of 55,000. (solid form) methyl ethyl ketone solution inch engeng. Φ lean φ ΐ Jfthj ψΒη fm _ ♦ tian. (η CN ϊη jj 41 ¥ δ t tO You draw hexamethylene diisocyanate with an average of 4 moles Reaction of hexamethyl diisocyanate, a reaction of glycerol dimethacrylate of ethylene oxide, with glycerol dimethacrylate having an average of 5 moles of propylene oxide H- 裨m τ-Η 〇η ν〇¢- Μ tO Η- Η inch feeds, 1 , | take S- ^ Η* spine m 1—Η ό Η ν〇 S- Ί 5 tnf η feed 、, 1 \\ 4 δ S-^ k hexamethylene diisocyanate with an amino phthalate ester of hexamethylene diisocyanate having an average of 5 moles of propylene glycol chain with an average of 5 moles of ethylene glycol chain Monomethacrylate urethane compound hexamethylene diisocyanate with an average of 5 moles of ethylene glycol monomethacrylate chain and flat 9 molar propylene glycol monomethyl acrylate chain urethane compound is added to both ends of the double A to form an average of 5 moles of ethylene oxide polyethylene glycol dimethacrylate Ester (BPE-500, manufactured by Shin-Nakamura Chemical Co., Ltd.) Adds diethylene acrylate of polyethylene glycol with an average of 2 moles of ethylene oxide at both ends of Shuangshui A (Xinzhongcun Chemical Co., Ltd.) Manufacture of BPE-200, product name) Polypropylene glycol having an average of 12 moles of propylene oxide added to the dimethyl group of an alkylene glycol having an average of 3 moles of ethylene oxide added to both ends Acrylate to trimethylolpropane has an average of 3 moles of ethylene oxide triacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd. A-TMPT-3E0, product name) 4-mercaptophenylheptaethylene glycol Propylene glycol acrylate (manufactured by Nippon Oil & Fats Co., Ltd., LS-100A) 4,4'-bis(diethylamino)benzophenone 2-(o-chlorophenyl)-4,5-diphenylimidazole Polymer diamond green colorless crystal violet 1-(2-di-n-butylaminomethyl)-5-carboxybenzotriazole with 1-(2-di-n-butylaminomethyl)-6-carboxybenzo Triazole 1 ·· 1 mixture T—^ PQ B-2 1 M-2 Μ-3 M-4 M-5 M-6 M-7 M-8 M-9 M-10 丨Μ-11 Μ-12 τ-Η (Ν |di 1 1 D-2 1 r— &lt;128769.doc -39- 200846825 [Industrial Applicability] The present invention can be applied to the manufacture of a printed circuit board, the manufacture of a flexible printed circuit board, and the lead frame for ic chip mounting (hereinafter referred to as a lead frame). Manufacturing of metal foils such as metal foil manufacturing, manufacturing of semiconductor packages such as BGA (spherical grid array) and CSP (wafer size packaging), TAB (Tape Automated Bonding) and COF ( Chip On, Film: The manufacture of a tape substrate, which is represented by a semiconductor chip 1C on a thin film board, the manufacture of semiconductor bumps, the ITO electrode of a flat panel display, the address electrode, or the electromagnetic wave mask. Manufacturing of parts.

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Claims (1)

200846825 十、申請專利範圍: 1. 一種感光性樹脂組合物,其特徵在於:含有(a)含羧基之 黏合劑:20〜90質量%、(b)具有至少一個末端乙烯性不 飽和基之加成聚合性單體:5〜75質量%、(c)光聚合起始 劑:0.01〜30質量% ; M 感光性樹脂組合物整體中含有1〜50質量%之選自由以 , 下述通式⑴及通式(II)所表示化合物所組成群 中之至少 一種化合物,以作為(b)具有至少一個末端乙稀性不飽和 • 基之加成聚合性單體; [化1] CHg—0—C—C—rw vii I W 2 NC—0—(A-0)nr(B-0)n2--CH—CH2—〇—π—C—ru / II 丫一CH2 r1\ OR3 ⑴ NC—O——(A-0&gt;nr(B-0)n4-CH—CHj-〇—n—C—ru HO II 1Γ 2 0 R4 CH2_〇—c一C_c II |~CH2 o R5 φ (其中,R1為破數4〜12之直鏈、支鏈或環狀之烷基、或 者碳數6〜12之烷基芳基,R2〜R5分別獨立為氫或曱基,A 為C2H4,B為CH2CH(CH3),ηι〜η4分別獨立為〇〜15之整 數,η 1 + ιΐ2 + η; + η#為 2 以上; • -(A-0)-及-(B_0)-之重複單元之排列可為無規排列亦可 為嵌段排列;於嵌段排列之情形時,-(A-Ο)-及&lt;3_〇)_之 順序,任一者均可在胺基曱酸S旨鍵側); 128769.doc 200846825 [化2] CH2 — Q—C·〇—pu li |~CH2 0 Re C-M—R6—N-C-O—{Α-〇)ητ-(Β〇)ηθ—CH-CH2-〇—c—C—CH2 (Α-0)γ)5-(Β-0)π§ ϋ C-N—R7—N-C-O—(A*O)n9-(B-0)n10—〇Η-〇η2~〇—〇—C—CH (U) ϋΗ HO200846825 X. Patent application scope: 1. A photosensitive resin composition characterized by comprising (a) a carboxyl group-containing binder: 20 to 90% by mass, and (b) having at least one terminal ethylenically unsaturated group. Polymerizable monomer: 5 to 75% by mass, (c) Photopolymerization initiator: 0.01 to 30% by mass; M The photosensitive resin composition as a whole contains 1 to 50% by mass of the following formula (1) at least one compound of the group consisting of the compounds represented by the formula (II) as (b) an addition polymerizable monomer having at least one terminal ethylenically unsaturated group; [Chemical 1] CHg-0 —C—C—rw vii IW 2 NC—0—(A-0)nr(B-0)n2--CH—CH2—〇—π—C—ru / II 丫一CH2 r1\ OR3 (1) NC—O ——(A-0&gt;nr(B-0)n4-CH—CHj-〇—n—C—ru HO II 1Γ 2 0 R4 CH2_〇—c_C_c II |~CH2 o R5 φ (where R1 Is a linear, branched or cyclic alkyl group having a number of 4 to 12, or an alkylaryl group having a carbon number of 6 to 12, and R2 to R5 are each independently hydrogen or a fluorenyl group, A is C2H4, and B is CH2CH ( CH3), ηι~η4 are independently 〇~15 The integer, η 1 + ιΐ2 + η; + η# is 2 or more; • The arrangement of the repeating units of -(A-0)- and -(B_0)- may be a random arrangement or a block arrangement; In the case of a segment arrangement, the order of -(A-Ο)- and &lt;3_〇)_ can be either on the amine side of the amino phthalic acid S; 128769.doc 200846825 [Chemical 2] CH2 — Q—C·〇—pu li |~CH2 0 Re CM—R6—NCO—{Α-〇)ητ-(Β〇)ηθ—CH—CH2-〇—c—C—CH2 (Α-0)γ) 5-(Β-0)π§ ϋ CN—R7—NCO—(A*O)n9-(B-0)n10—〇Η-〇η2~〇—〇—C—CH (U) ϋΗ HO 2. II O R1U CH 广 〇一一c—ς—M丨;Γ 0 R1' (其中’ R6及R7分別獨立為碳數4〜12之直鍵、支鏈或環 狀之烧基、或者碳數6〜12之烧基芳基,R8〜r&quot;分別獨立 為氫或甲基,A為C2H4,B為CH2CH(CH3),n5及n6為 〇〜15之整數,h+n6為1以上,n7〜n1()分別獨立為〇〜15之 整數’ n7+n8+n9+ni〇為2以上; -(A-Ο)-及-(B-0)-之重複單元之排列可為無規排列亦可 為嵌段排列;於嵌段排列之情形時,-(Α·〇)_及_(Β_〇)·之 順序,任一者均可在胺基甲酸酯鍵側)。 如請求項1之感光性樹脂組合物,其中其進一步含有以 下述通式(III)所表示之化合物,以作為上述(…含有至少 一個末端乙烯性不飽和基之加成聚合性單體: [化3]2. II O R1U CH 广〇一c cςς-M丨; Γ 0 R1' (where 'R6 and R7 are independently a direct bond of 4 to 12 carbon atoms, a branched or cyclic group, or carbon Number 6~12 of the alkylaryl group, R8~r&quot; are independently hydrogen or methyl, A is C2H4, B is CH2CH(CH3), n5 and n6 are integers of 〇15, and h+n6 is 1 or more. N7~n1() are independently integers of 〇~15' n7+n8+n9+ni〇 is 2 or more; -(A-Ο)- and -(B-0)- repeating units can be arranged as random The arrangement may also be a block arrangement; in the case of block arrangement, the order of -(Α·〇)_ and _(Β_〇)· may be on the urethane bond side). The photosensitive resin composition of claim 1, which further contains a compound represented by the following formula (III) as the above-mentioned (addition-polymerizable monomer having at least one terminal ethylenically unsaturated group: [ 3] HO i II NC - -(A-OirviHB-O)!^—C—C 二:CBHO i II NC - -(A-OirviHB-O)!^—C—C II: CB (其中,R1為碳數4〜12之直鏈、支鏈或環狀之烧基、 128769.doc -2 - 200846825 或者碳數6〜12之烷基芳基,R13及R14分別獨立為氫或曱 基,A 為 C2H4,B 為 CH2CH(CH3),ηη^ιΐΗ 分別獨立為 0〜15之整數,]111 + 1112+]113+1114為2以上; -(A-O)-及-(B-0)-之重複單元之排列可為無規排列亦可 為嵌段排列;於嵌段排列之情形時,-(A-Ο)-及-(B-0)-之 順序,任一者均可在胺基甲酸酯鍵側)。 3· 一種感光性樹脂積層體,其包含感光性樹脂層及支持 體,該感光性樹脂含如請求項1或2之感光性樹脂組合 物0 4· 一種光阻圖案之形成方法,其特徵在於:包括於基板上 使用如請求項3之感光性樹脂積層體而形成感光性樹脂 層之積層步驟、曝光步驟、及顯影步驟。 5. 如請求項4之光阻圖案之形成方法,其中於上述曝光步 驟中,進行直接微影(lithography)而實施曝光。 6. -種印刷電路板之製造方法,其特徵在於:包括對藉由 : = 之方法形成有光阻圖案之基板進㈣:或 7. :種具有凹凸圖案之基材之製造方法,其特徵在於.勺 圖藉由如請求項4或5之方法形成有‘ /、I |板進订加工之步驟。 8· 一種半導體封裝體之製造方法, 4或5之太匕括對精由如請求頊 ^之方法形成有光阻圖案 項 9· 一籀几榣 木又丞扳進仃電鍍之步驟。 、之製造方法,其包括對藉由如往 、 法形成有光阻圖宰某 明〉項4或5之方 α水之基板進仃電鍍之步驟。 128769.doc 200846825 種導線架之製造方法, 方法形成有光阻圖荦匕對错由如請求項4或5之 l種印刷電路板進行'刻之步驟。 如請求項4或5之方法开二二其特徵在於··包括對藉由 步驟,電鍍步驟中使用…:且圖案之基板進行電鍍之 從用虱化貴金屬電鍍浴。 12種半導體封裝體之製造方法,其特徵在於··包括 :請求項4或5之方法形成有光阻圖案之基板進行電: 之乂驟,電鍍步驟中使用氰化貴金屬電鍍浴。 &quot; 13· -種凸塊之製造方法,其特徵在於:包括對藉由如請求 項4或5之方法形成有光阻圖案之基板進行電鍍之步騍, 電鑛步驟中使用氰化貴金屬電鍍浴。(wherein R1 is a linear, branched or cyclic alkyl group having a carbon number of 4 to 12, 128769.doc -2 - 200846825 or an alkylaryl group having a carbon number of 6 to 12, and R13 and R14 are each independently hydrogen or曱, A is C2H4, B is CH2CH(CH3), ηη^ιΐΗ is independently an integer of 0~15, and ]111 + 1112+]113+1114 is 2 or more; -(AO)-and-(B-0 The arrangement of the repeating units may be a random arrangement or a block arrangement; in the case of a block arrangement, the order of -(A-Ο)- and -(B-0)- may be On the urethane bond side). 3. A photosensitive resin laminate comprising a photosensitive resin layer and a support, the photosensitive resin comprising the photosensitive resin composition of claim 1 or 2, a method for forming a photoresist pattern, characterized in that A step of laminating, a step of exposing, and a developing step of forming a photosensitive resin layer using the photosensitive resin laminate of claim 3 on a substrate. 5. The method of forming a photoresist pattern according to claim 4, wherein in the exposing step, direct lithography is performed to perform exposure. 6. A method of manufacturing a printed circuit board, comprising: forming a substrate having a photoresist pattern by a method of: = (4): or 7. A method of manufacturing a substrate having a concave-convex pattern, characterized in that The method of forming a '/, I | board binding process is formed by the method of claim 4 or 5. 8. A method of fabricating a semiconductor package, wherein the method of forming a photoresist pattern is performed by a method such as requesting 9^. And a manufacturing method comprising the steps of performing a plating process on a substrate on which a photoresist having a photoresist pattern of 4 or 5 is formed by a conventional method. 128769.doc 200846825 A method of manufacturing a lead frame, the method is formed with a photoresist pattern, and the right and wrong steps are performed by one of the printed circuit boards of claim 4 or 5. The method of claim 4 or 5 is characterized in that it comprises: a plating bath for deuterated precious metal from which the substrate of the pattern is used for electroplating by means of a step; A method of manufacturing a semiconductor package according to the invention of claim 4 or 5, wherein: the substrate having the photoresist pattern formed by the method of claim 4 or 5 is subjected to electricity: a cyanide precious metal plating bath is used in the plating step. &lt;13&gt; - A method of manufacturing a bump comprising: a step of electroplating a substrate formed with a photoresist pattern by the method of claim 4 or 5, using a cyanide noble metal plating in the electro-mine procedure bath. 128769.doc 200846825 七、指定代表圖: (一) 本案指定代表圖為:(無) (二) 本代表圖之元件符號簡單說明: 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式: CH2一〇—C— I H 12 2 II OR2 N^C一0 — (A-0)ni-(B-0)n2-CH—CH2—Ο—C一CzzzCH (I) a N C 一 Ο-{Α-0)Π3-(Β-0)Π4~ Η Ο CH—CH厂0——C—Cz=CH CH2一ο—c—C=〇h9 II l5 2 OR5128769.doc 200846825 VII. Designated representative map: (1) The representative representative of the case is: (none) (2) The symbol of the symbol of the representative figure is simple: 8. If there is a chemical formula in this case, please reveal the best indication of the characteristics of the invention. Chemical formula: CH2〇—C— IH 12 2 II OR2 N^C—0—(A-0)ni-(B-0)n2-CH—CH2—Ο—C—CzzzCH (I) a NC {Α-0)Π3-(Β-0)Π4~ Η Ο CH—CH厂0——C—Cz=CH CH2一ο—c—C=〇h9 II l5 2 OR5 -4- 128769.doc-4- 128769.doc
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