TW200830372A - Metal-organic vaporizing and feeding apparatus, metal-organic chemical vapor deposition apparatus, metal-organic chemical vapor deposition method, gas flow rate regulator, semiconductor manufacturing apparatus, and semiconductor manufacturing method - Google Patents

Abstract

A metal-organic vaporizing and feeding apparatus includes: a retention vessel (1) for retaining a metal-organic material (13); a bubbling gas feeding path (3) connected to the retention vessel (1), for feeding bubbling gas to the metal-organic material (13); a metal-organic gas feeding path (5) connected to the retention vessel (1), for feeding metal-organic gas generated in the retention vessel (1) and dilution gas to a deposition chamber; a dilution gas feeding path (7) connected to the metal-organic gas feeding path (5), for feeding the dilution gas to the metal-organic gas feeding path (5); a flow rate regulator (9) provided in the bubbling gas feeding path (3), for regulating flow rate of the bubbling gas; a pressure regulator (11) for regulating pressure of the dilution gas; and a sonic nozzle (S) disposed in the metal-organic gas feeding path (5) on a downstream side of a connecting position between the metal-organic gas feeding path (5) and the dilution gas feeding path (7).

Description

200830372 IX. Description of the Invention: The present invention relates to an organometallic vaporization supply device, an organometallic vapor deposition device, an organometallic vapor deposition method, a gas flow regulator, a semiconductor manufacturing device, and a semiconductor manufacturing method, More specifically, the present invention relates to an organometallic vaporization supply device for forming a nitride-based compound semiconductor, an organometallic vapor deposition device, an organometallic vapor deposition method, a gas flow regulator, a semiconductor fabrication device, and a semiconductor fabrication method. . • [Previous Technology] The Metal Organic Chemical Vapor Deposition (MOCVD) method is a representative gas phase film formation method, and is a method for vaporizing an organic metal to thermally decompose it on a substrate surface. . Since this method can control film thickness and combination and is excellent in productivity, it is widely used as a film forming technique in the case of manufacturing a semiconductor device. The MOCVD apparatus used in the MOCVD method includes a processing chamber, a susceptor disposed in the processing chamber, and an organic metal vaporization supply device for gasifying the organic metal material to flow into the surface of the substrate. In the MOCVD apparatus, by placing a substrate on a susceptor, the processing chamber is controlled to a suitable pressure-force, the substrate is heated to an appropriate temperature, and an organic metal vaporization supply device is used to introduce an organometallic gas onto the surface of the substrate. Film formation is carried out. Here, in order to make the state of the film to be formed uniform, it is required to maintain a constant flow rate of the organic metal gas flowing into the surface of the substrate. In the MOCVD apparatus, various organic metal vaporization supply devices have been proposed in order to maintain a constant flow rate of the organometallic gas. 121662.doc 200830372 Fig. 12 is a schematic view showing a prior art crucible having an organic metal A supply device. Referring to Fig. 12, the prior organic metal vaporization supply device is provided with a "Ningliu container", a foaming gas supply path #1G3, an organic metal gas supply path 105, a dilution gas supply path 107, a temperature bath 110, and valves V101 to V106. The mass flow controller Μι〇ι and the leak 2 and the pressure P101 〇 the thermostatic bath 110 are arranged with a storage and crying negative Ding Fen Valley 101, and the storage container 101 stores the organic metal raw material 113 in the liquid storage, and the left eye is protected against the aw.

In the heart and night body, a foaming gas supply path 1G3 is connected to the upstream side of the rich container 101. The foaming gas supply path 1G3 extends so as to reach the inside of the organic metal material 113. In the foaming gas supply path 103, a valve V102, a mass flow controller M102, and a valve V103 are provided in this order from the upstream side. " The organic metal gas supply path 105 is connected to the downstream side of the storage container 101. The organometallic gas supply path 1〇5 is connected to a position where it does not come into contact with the liquid organic metal material 113. The organometallic gas supply path 1〇5 is provided in order from the upstream side: valve V104, pressure gauge P101, and valve νι〇5 (pressure control valve). The pressure gauge Ρ101 is electrically connected to the valve V105. The organometallic gas supply path 105 is connected on the downstream side to a film forming chamber not shown. The diluent gas supply path 1 07 is connected to the organometallic gas supply path test 10 5 . The diluent gas supply path 1〇7 is connected to the organometallic gas supply path 105 at a position where the pressure gauge p 〇1 is provided. On the dilution gas supply path ι〇7, the valve νιοι and the mass flow controller M1〇1 are sequentially provided from the upstream side. Further, a valve (bypass valve) VI 06 is provided between the foaming gas supply path 103 and the organic metal gas supply path 105. 121662.doc 200830372 In the organic metal vaporization supply device of the prior art, the gas is supplied to the film forming chamber as follows, and the organic metal body is supplied to the path opening valve V102, and the mass flow rate is controlled by the foaming machine surface...! The valve VU)3 is controlled to open, and the inlet mesh is...the straw is closed by the valve Vl06, and the V is inserted into the shell 留 谷 谷 101. The organic gold thermostat 110 and ^ ^ ^ τ ding 10 113 are kept by the liquid temperature of the crucible, thereby maintaining the pressure. The foaming gas is introduced into the storage service 疋 (when π, ώ曰θ 1 is added, the organic matter is set according to the foaming gas flow, and Ay ^ ’

To the body of the milk, the hunter is produced by foaming and owning 113, and by opening the valve V104 of the original shake field, the organic metal gas and a part of the foaming gas are introduced to guide the organic metal gas supply path. The valve side is opened, and the diluent body is supplied to the diluent gas supply path iG7. The dilution gas is controlled by the mass flow controller M1〇1 and introduced into the organometallic gas supply path 1〇5 to be mixed with the organic gold: gas and the foaming gas. The total pressure of the mixed gas of the organometallic gas, the diluent gas and the foaming gas is combined, and the pressure is measured by a pressure gauge, and the valve V105 is adjusted in accordance with the value of the pressure gauge P101. As a result, the organic metal gas is supplied to the film forming chamber at an appropriate flow rate and pressure. Since the total pressure of the mixed gas is controlled by the concentration of the organometallic gas in the pressure gauge P1 01 and the valve VI05, the mixed gas Φ 夕古德属 潇 body 66,: 硌 _ _ A similar structure of the above-described prior art metal vaporization supply device is disclosed in Japanese Laid-Open Patent Publication No. 2001-3 13731. In this publication, an organic metal raw material is stored in an organic metal source gas supply source, and an introduction line for introducing krypton (H2) gas into the organic metal raw material gas supply source is connected to the upstream side of the organic metal source gas supply source. The inlet line is equipped with a valve and I21662.doc 200830372 Bei i / Guari control benefits. On the downstream side of the supply source of the organometallic material gas, an introduction line for introducing the organometallic source gas into the reactor is connected. A pressure gauge and valve are provided on the induction line. The pressure gauge is electrically connected to the valve. Structure of the Bulletin A mass flow controller is also used for the flow control of each of the dilution gas and the organometallic gas. The control of the Bellow m1 includes: calculating the gas flow rate in the flow path from the flow rate through the bypass line, and performing the flow control circuit and the flow control control valve according to the calculation result, thereby becoming a complicated structure. The previous organometallic alpha supply device needs to: control the flow rate of the organometallic gas (4) the mass flow controller M102, and control the foaming gas (dilution gas): the minimum mass flow control of the mass flow controller M101 for the quantity &quot The problem with the other organic metal vaporization supply devices is that the device is complicated. Further, since the apparatus is complicated, the manufacturing cost of the organic metal vaporization supply means is increased, and the cost of forming a film by the MQCVD method is increased. SUMMARY OF THE INVENTION An object of the invention is to provide an organometallic nitriding supply device, an organometallic vapor deposition device, an organometallic vapor deposition method, a gas flow regulator, a semiconductor manufacturing device, and a semiconductor manufacturing device which can simplify the device. method. The organic metal vaporization supply device of the present invention comprises: a container (4) an organic metal _; a foaming gas dragon feeding path, the material of which is connected to the benefit and the poem supplying a foaming gas in the organic metal raw material; the organic metal e body supply a path, which is connected to the container 且^ and is used to supply the organometallic gas and the diluted diluent gas supply path generated in the chamber 121662.doc 200830372, which is a diluent gas for connecting the m body; and is used for diluting Gas supply to organic = machine metal gas supply path, section, basin system in p metallurgy, king: gas supply path; flow volume adjustment flow; pressure adjustment part, (4) 2, and used to adjust foaming gas and section The flow portion, i is disposed at a pressure that adjusts the dilution gas by the second ratio; the body supply path is the gas supply path and the diluent gas. The throttle can be adjusted by the upper flow. The gas passing through the pressure of the milk body is adjusted by the organic metal pressure regulating portion of the present invention. The organic gas is a small gas, which is substantially by the flow rate of the gas supplied by the organometallic gas. Therefore, the film forming chamber can be supplied with ^ 10 ^ Λ ^ (3) the flow rate of the organometallic gas which is allowed by the machine and the pressure regulating portion. The result 'because there is no need to do less I. . , the Berry machine 1 controller is used in it, so it is possible to prematurely set the device. =In the organic metal vaporization supply unit, the 'requirement adjustment unit should contain ··········································· The flow rate and the foaming gas shifting force adjustment=4 are disposed on the upstream side of the foaming gas element and are used to adjust the pressure of the foaming gas supply path. Thereby, the flow rate of the gas = gas f can be controlled by the adjustment of the force of the foaming gas force regulating portion. Therefore, the mass flow controller for controlling the flow rate of the foaming gas is not required, and the device can be realized. Step-by-step simplification. Furthermore, since the pressure of the foaming gas is adjusted by the foaming gas pressure adjusting portion from 12l662.doc •10-200830372, the dust can be prevented even if the dusting force of the foaming gas on the upstream side of the flow regulating portion is drastically changed. The change affects the downstream side. In the metal vaporization supply device, the organometallic gas supply path ^: the second feeding path and the second supply path, and the throttling portion includes: :: the first throttling portion of the supply path and the second throttling portion The first part of the supply path: the flow department. The first supply path and the second supply path are connected to the downstream side of the first throttle portion and the second throttle portion on the downstream side. Further, a first-switching mechanism is used for switching the type of the foaming gas between the hole body and the first foaming gas; and the second switching device is used for the supply path and the second The flow path of the metal gas and the diluent gas is switched between the supply paths. , ± = ' can be used according to the type of foaming gas, from the first throttling section and the second section: the throttling section. As a result, the flow rate characteristics of the gas introduced into the film forming chamber can be suppressed by suppressing the change of the foaming holes used. In the organic metal vaporization supply device, it is preferable to supply the first foaming gas to the foaming gas supply path t, and to switch the flow path of the organic metal gas to: 仏, °° path, and the first throttle portion The gas pressure on the upstream side is specific to the gas flow rate of the first throttling portion, and the second foaming gas is supplied to the foaming gas supply path, and the flow path of the organic metal gas is supplied to the path. The gas pressure on the upstream side of the second throttle portion is such that the gas flow rate through the second throttle portion is equal to each other to constitute the first throttle portion and the second throttle portion. By this, the foaming gas to be used is changed from the first foaming gas to the first blowing gas to the first blowing gas, and the gas flow rate of the tombstone and the film forming chamber can be equalized. In the 汽=vaporization supply device, it is preferable to further provide a diluent gas, which is provided on the diluent gas supply path and is used for measuring the flow rate of the diluent gas. =' When switching the type of the foaming gas, it is judged whether or not the inside of the source is replaced by the foaming gas after the switching by the means of the dilution gas, so that the time of the pre-expansion can be shortened. In the above-described organometallic vaporization supply device, the 'diluted gas flow rate measuring unit preferably includes a dilute gas element' that adjusts the flow rate of the gas passing through the gas pressure on the upstream side and the gas pressure on the upstream side; The presser is a pressure for measuring the upstream side of the component for the diluent gas, and a thermometer for measuring the temperature of the component for the diluent gas. "耩' Here, the flow rate of the gas passing through the component for diluting the gas can be calculated from the measured value of the pressure gauge for the dilution gas. The MOCVD apparatus of the present invention has the following advantages: the above-mentioned organic metal vaporization supply is disposed; and the gas supply path 'is used for supplying other gases for film formation: to the film forming chamber' and the film forming chamber' The organometallic gas is ordered into a film with other chaotic bodies. Therefore, the simplification of the MOCVD apparatus can be achieved. In addition, most of the material gases can be used for film formation. The organic metal vapor phase deposition method of the present month has a flow adjustment step of adjusting the flow rate of the foaming gas and supplying the foaming gas to the organic gold raw material; and a force adjustment step of adjusting the pressure of the diluent gas; The mixing step is carried out after the flow adjustment step and the pressure adjustment step, and the organic metal gas and the diluent gas generated by the metal raw material are collected, and the step of mixing 121662.doc -12-200830372 is carried out, which is after the mixing step. Through the throttle unit, money is supplied to the combined gas. The throttle can adjust the flow of gas through which fn passes upstream. In the organometallic vapor deposition method, the mixed gas of the organometallic gas and the gas is substantially adjusted by the pressure of the mixed gas to supply the film forming chamber, thereby being adjustable by the flow rate adjusting step and the pressure regulating step

The flow rate of the organometallic gas in the membrane chamber. As a result, the mass flow controller is used because of the flow rate of the diluent gas, which is simplified. In the above-described organometallic vapor deposition method, the flow portion and the second throttle portion are formed, and the film forming step dilutes the gas or the type of the foaming gas, and switches from the first throttle portion to the second throttle portion.

Gas; and film forming chamber supply gas pressure on the mixed side The pressure of the pressure adjusting step of the present invention is used to adjust the flow rate of the gas. In order to control the introduction, in order to control the device, the throttle unit preferably includes: the first section includes a switching step, which is not in accordance with the throttle portion to be passed through the mixed gas: "may be in accordance with the type of the foaming gas, from the first The throttle unit and the medium are selected as the throttle unit. As a result, the flow rate characteristic change of the gas introduced into the film forming chamber with the change of the gas can be suppressed, and the flow rate of the gas is measured in the organic metal vapor phase deposition method. ^, §1 ^^ 乂 Having the measurement of the dilution amount convergence A. In the measurement step, when the flow of the dilution gas converges to a 疋 value, the film formation step is performed. Otherwise, when the type of the foaming gas is switched, the flow rate is inscribed. ~ The field τ fine is made from the inside of the dilution gas. Whether the interior of each unit can be shortened after switching, the U-package is replaced by the body, so the above-mentioned organometallic vapor deposition method is formed in the step of forming The compound semiconductor film is more preferably composed of (〇$X$l, 〇SySl, 〇$X + ySl). The formation of a compound semiconductor film, in particular, AlxGayI is formed. When n]xyN祺, most of the raw material gases are used, and therefore the organometallic vapor phase deposition method of the present invention is suitable.

The gas flow regulator of the present invention includes: an element that adjusts a flow of a gas that passes through a gas pressure on the upstream side and a gas pressure on the downstream side, and the first pressure juice is used to measure the downstream side of the element Pressure; the first pressure is 50, which is used to measure the pressure on the upstream side of the element; the thermometer is used to measure the temperature of the element; and the pressure regulating portion is used to adjust the pressure of the gas on the upstream side of the element . When the gas flow regulator of the present invention is used, the flow rate of the gas passing through the element can be adjusted by adjusting the gas pressure on the upstream side of the element based on the measured value of the first pressure gauge and the measured value of the second pressure gauge. As a result, since the mass flow controller for controlling the gas flow rate is not required, the simplification of the apparatus can be achieved. The semiconductor manufacturing apparatus of the present invention includes: a substrate processing chamber for processing a substrate, a plurality of pipelines connected to the substrate processing chamber, and a gas for supplying gas in the substrate processing chamber; and the gas flow rate adjustment described above The device is disposed in a plurality of pipelines, at least ^ γ w owing Y main ^ any rafter. Several lines are connected to each other on the upstream side of the gas flow regulator. According to the semiconductor manufacturing apparatus of the present invention, the flow rate of the gas passing through the element can be adjusted based on the measured value of the first pressure gauge j, the measured value of the second pressure gauge, and (4) the gas pressure on the upstream side of the element. As a result, since it is not necessary to use the mass flow controller for controlling the volume of the carcass, it is possible to prematurely reduce the device. The semiconductor manufacturing method of the month of the present invention is a step of manufacturing a split garment k method using the above-described semiconductor and having a pressure adjustment portion for adjusting the pressure on the upstream side of the element. According to the semiconductor manufacturing method of the present invention, the flow rate of the gas adjusted by the gas flow rate regulator does not easily change even if the t on the upstream side of the element fluctuates. The above-mentioned manufacturing apparatus is preferably a device for forming a semiconductor conductor on a substrate by vapor deposition. In addition, the emulsion phase deposition is preferably a hydride vapor deposition method or an organometallic vapor phase deposition method. The upper return manufacturing method has a method in which the semiconductor compound is in contact with the main channel and the disordered material + V body is formed by vapor deposition on the substrate. The above vapor deposition is preferably a hydride gas phase. Deposition method. ". Integral method or organometallic gas phase [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. (First Embodiment) In the first embodiment, in the present embodiment, the organic borrowing heads ~ α ^ to the genus/flying supply device, the preparation, the retention container, the foaming gas supply path, and the defeat of you ς ^ Organometallic gas supply path ", dilution gas supply path 7, as gas one": adjustment unit 9, constant temperature tank 1〇, pressure adjustment unit u, J state flow straight nozzle S, valve V3AV4 'and thermometer T2. The organic gas raw material is stored in the sonic storage container 1 of the flow portion, and the foaming gas supply path 3 is connected to the upstream side of the storage capacity 121662.doc -15-200830372 叩1. The supply path and the inside of the organic metal raw material 13 are extended. The foaming gas supply path 3 is provided with a flow rate adjusting unit & for adjusting the flow rate of the foaming gas. The organic metal gas is connected to the downstream side of the storage container 1. The supply path 5. The organometallic gas supply path 5 is connected to a position that is not in contact with the liquid organometallic raw material U. The dilution gas supply path 7 is connected to the organometallic gas supply path 5 at the position A. The dilution gas supply path 7 is provided for use. Adjustment The pressure adjusting portion n of the pressure of the dilution gas. The organometallic gas supply path 5 on the downstream side of the 位置 ratio position A is provided with a sonic nozzle $ and a μ-degree juice T2 from the upstream side. The organometallic gas supply path 5 is The downstream side is connected to a film forming chamber not shown in the drawing. The sonic nozzle s has a ratio of the gas pressure ρΑι on the upstream side of the sonic nozzle s to the gas pressure PA2 on the downstream side of the sonic nozzle S, PA2/PA1 reaches a certain value (critical pressure) When the ratio is below, the flow rate of the gas passing through the sonic nozzle is equal to the nature of the speed of sound. The amount of gas & through the sonic nozzle S does not depend on the downstream

The gas pressure on the side is adjusted by the gas pressure on the upstream side and the temperature of the sonic nozzle S to regulate the flow rate of the gas passing through the sonic nozzle s. Specifically, the gas flow rate Q through the sonic nozzle S is expressed by the following formula (1): Q = AxCdxPAlx (MwxCp / Cv / R / T) 1/2 · · (1) where A constant, Cd The coefficient of the gas type of the outflow coefficient is different, the Mw system, the gas mass of the gas, the Cp system constant pressure specific heat, the constant volume specific heat, the R system gas constant, and the temperature of the Ding sonic nozzle 8. When the critical pressure ratio PA2/PA1 is 0.52, the gas pressure pA2 on the film forming chamber side (downstream side) is 121662.doc •16-200830372 At atmospheric pressure, the pressure PA1 on the upstream side of the sonic nozzle S needs to be 195 kPa or more. A relationship between the gas pressure PA1 on the upstream side of the sonic nozzle S and the gas flow rate through the sonic nozzle is shown in Fig. 2 and Table 1. [Table 1] Pressure (kPa) Flow rate (seem) 261 1189 241 1096 221 1004 220 1000 201 909 181 808 161 696 141 568 121 394 Referring to Figure 2 and Table 1, the flow of gas through the sonic nozzle s and the upstream of the sonic nozzle S are known. The gas pressure PA1 on the side is approximately proportional. The pressure adjusting portion 11 includes, in order from the upstream side, a valve ¥1 and a pressure gauge H. The valve V 1 and the pressure gauge p 1 are electrically connected to each other.

Referring to Fig. 1, the flow rate adjusting unit 9 includes, in order from the upstream side, a valve V2 as a foaming regulating portion, a pressure gauge P2, a laminar flow element F as a foaming gas element, a pressure gauge P3, and a temperature #Τ1. Valve V2 is electrically connected to the pressure _. The laminar flow element F has a shape in which a plurality of tubes are bundled, or a shape of a porous transition crucible, and the gas pressure PB1 on the upstream side of the laminar flow element F and the gas pressure on the downstream side of the layer and the flow element F can be used.叩2 and the temperature of the layer force element f' regulate the gas flow rate through the laminar flow element F. Specifically, the flow rate Q of the gas passing through the laminar flow element is represented by the formula (3). 121662.doc 17 200830372

Qm is represented by the following formula (2): Q=((B2+4AxQm)1/2-B)/2A · · (2)

Qm-(PBl-PB2)x(PBl+PB2 + a)xC/T · (3) where A, B, and C are constants, and the temperature of the T-layer laminar flow element F. A relationship between the pressure difference between the gas pressure PB1 on the upstream side of the laminar flow element F and the gas pressure PB2 on the downstream side and the gas flow rate through the laminar flow element F is shown in Fig. 3. Referring to Fig. 3, when the pressure PB2 on the downstream side is any of 161 kPa, 201 kPa, and 24 1 kPa, the difference between the gas pressure PB 1 on the upstream side of the laminar flow element f and the gas pressure PB2 on the downstream side can be calculated. The gas flow rate of the flow element ρ. Referring to Fig. 1, in the organic metal vaporization supply device of the present embodiment, an organic metal gas is supplied to a film forming chamber as described below to form a film. First, the bubble gas is supplied to the foaming gas supply path 3 by opening the valve V 2 . The flow rate of the foaming gas is adjusted by the flow rate adjusting unit 9, and is introduced into the storage container 1 via the valve V3 (flow rate adjusting step). That is, the gas pressure (the gas pressure on the upstream side of the laminar flow element F) PB1 between the valve V2 and the laminar flow element F is in accordance with the pressure gauge. The value of 2 is adjusted by valve V2. Further, the gas pressure pB2 on the downstream side of the laminar flow element F is substantially adjusted according to the value of the pressure gauge P3 by the operation of the valve described later. Furthermore, the temperature of the laminar flow element F is measured by the thermometer T1. Then, according to the temperature of the laminar flow element F, the flow rate of the foaming gas introduced into the storage container i is controlled by appropriately controlling the pressure pBi and the pressure PB2. When the foaming gas is introduced into the storage container 1, when the organic metal raw material 13 is supplied, the organometallic gas in an amount of the amount of the supplied hair or the bubble gas is produced by foaming 121662.doc -18-200830372 t. After the introduction into the right: the organometallic gas and - part of the foaming gas through the valve

, machine metal gas supply path 5. Further, the dilution gas is supplied to the rn via > Hita open valve ^ r 虱 供给 supply path 7 by hitting n M V1 '. Diluted gas # by pressure adjustment Qiu 〗 〖Nan Guangguang 枰 体 体 精 气体 气体 气体 孜 ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° In the metal gas supply section 11, the 麻#麻 y 1 geology 々 々 flight system according to the value of the pressure gauge P1, and by the valve VI, the dilution of the organic metal gas supply path 5 Gas mixing

Mouth = metal gas and foaming gas to form a mixed gas (mixing step). The mouthpiece is passed through the sonic nozzle s as a suitable flow. The film formation (film formation step). ^ / 1. Here, since the diluent gas supply path 7 is connected to the organic metal gas supply path 5, The pressure measured by the pressure gauge ρι is equal to the pressure p A1 of the organometallic gas supply path 5 on the upstream side of the sonic nozzle ^. The pressure p A1 becomes the pressure of combining the organometallic gas, the foaming gas and the diluent gas, and can be controlled by the valve V1. The pressure PA1 is substantially controlled. In the sonic nozzle S, the gas flowing toward the downstream side of the sonic nozzle 8 (organic gas) is controlled by adjusting the pressure measured by the pressure gauge 1 to a suitable value according to the value of the thermometer Τ2. In addition, in a state where the valve V3 and the valve V4 are opened, the pressure measured by the pressure gauge P1, the pressure PA1 on the upstream side of the sonic nozzle s is substantially equal to the pressure PA2 measured by the pressure gauge P3. Thus, the laminar flow element The gas pressure PB2 on the downstream side of F can be substantially adjusted by the operation of the valve ¥ 1. Strictly speaking, only the pressure of the amount of the organic metal raw material 13 of the liquid is pA2 (= pB2), and the other 'reservoir container 1 Placed in a constant temperature bath 1 ,, organic metal raw material 12I662.doc •19· 200830372 1-3= maintain a certain liquid temperature from the constant temperature bath 1', thereby maintaining a certain vapor pressure. The organic metal gas in the pressure (pressure PA1) is controlled such that the pressure is controlled to be equal to the flow rate of the foaming gas, and the amount of the organic metal gas corresponding to the partial pressure of the organic metal gas is supplied to the organic metal gas supply path 5.

The organic metal vaporization supply device according to the present embodiment includes a storage container for storing the organic metal raw material crucible 3, and a foaming gas supply path 3° connected to the storage container 1' and used in the organic metal raw material 13 Supply, bubble gas; organometallic gas supply path 5, which is connected to storage capacity 1 and used to supply the film forming chamber to the storage container! An organic metal gas and a diluent gas generated therein; a dilution gas supply path 7 connected to the organic f-gen gas supply path 5' and for supplying a dilution gas to the organic metal supply path 5; a flow rate (four) portion 9, The foaming gas supply path is used for the flow rate of the fluff gas; the dust adjusting unit Η is used for adjusting the repeated force of the dilute gas; and the sonic nozzle S is disposed at the specific position, the downstream side of the crucible The organometallic gas is supplied to the path 5. The sonic nozzle § adjusts the flow of gas through the gas pressure on the upstream side. The straw is regulated by the force! ! The valve V1 adjusts the organic metal gas supply path 5: gas pressure ' to adjust the gas flow rate supplied to the film forming chamber by the gas [the force of the organic metal gas supply path 5]. Because of the towel, the flow rate of the organometallic gas in the film forming chamber can be guided by the flow regulation and pressure regulation section:: Since the mass flow rate for controlling the flow rate of the dilution gas is not required, σ is required. This makes it possible to simplify the device. Furthermore, when the organic metal vaporization supply device of the present embodiment is used in conjunction with the apparatus, the substantiality is substantially 121662.doc -20-200830372, and the manufacturing cost of the organic metal vaporization supply device is lowered, and the p step can be reduced by MOCVD. The cost of forming a film by law. Further, by using the sonic nozzle s, the throttle portion can be used even if the atmospheric pressure on the downstream side is used, and the film formation chamber can be formed into a film by air. Thereby, in particular, a nitride semiconductor can obtain good crystals. The flow rate adjusting unit 9 includes a laminar flow material that adjusts a gas flow rate that passes through the gas pressure on the dead side and the gas pressure on the downstream side; and the valve V2 'is disposed in the laminar flow element F The upstream side is used to adjust the pressure of the foaming gas supply path 3. Thereby, the flow rate of the foaming gas can be controlled by the pressure regulation of the valve V2. Therefore, a mass flow controller for controlling the flow rate of the foaming gas is not required, and the apparatus can be further simplified. Further, since the pressure of the foamed rolling body can be adjusted by the valve V2, even if the pressure of the gas (the secondary side pressure) changes rapidly on the upstream side of the flow rate adjusting portion 9, the fluctuation can be prevented. Affects the downstream side. In other words, the supply source for supplying the foamed milk to the foaming gas supply path 3 may be used to supply a foaming gas (hereinafter, referred to as another gas) for foaming other organic metal gases for transport. Planting of raw materials or various exclusion gases. When the supply source is used to supply other gases, when the foaming gas is supplied to the organic metal vaporization supply device of the present embodiment, and the other gas is supplied at the same time, the original pressure of the other gas is drastically reduced by J /, and the pressure of the gas is impatient. Reduce, resulting in the interaction of the resulting organometallic gas. In the case of using the organometallic vaporization supply device of the present embodiment, the fluctuation of the pressure of the foaming gas can be suppressed by the valve V2, so that the fluctuation of the amount of the organometallic gas can be suppressed. As a result, it is stable at the time of film formation. 121662.doc -21 - 200830372 The homogeneity of sex and film is improved. The organometallic vapor phase deposition method in the present embodiment includes a flow rate adjusting step of flowing a side of the foaming gas, and supplying the foaming gas to the organic material 13 and a pressure adjusting step of adjusting the diluent gas. a mixing step, which is carried out after the flow regulating step and the pressure adjusting step, mixing the organometallic gas generated from the organometallic raw material 13 with the diluent gas to obtain a mixed gas; and a step of forming, after the mixing step The gas is supplied to the film forming chamber through the sonic nozzle S to form a mixed gas. The sonic nozzle S adjusts the flow rate of the gas that passes through the gas pressure on the upstream side. When the organometallic vapor phase deposition method in the present embodiment is used, the pressure adjustment step is used to adjust the pressure of the snapping gas of the organometallic gas and the diluent gas to (4) by the pressure of the mixed gas. Film formation: The flow rate of the supplied gas. Therefore, it is possible to adjust the flow rate of the organometallic gas introduced into the film forming chamber by adjusting the steps and the pressure adjustment from the cold and the stalk. As a result, the mass is not required to control the flow rate of the dilution gas, so that the apparatus can be simplified. Further, in the present embodiment, the throttle portion 8 is used as the throttle portion. However, the throttle portion of the present invention may be other than the sonic nozzle, and the gas flow rate through which the gas pressure on the upstream side passes may be adjusted. can. Further, in the present embodiment, #1Β日味曰##^ is the case where the laminar flow element r is used in the k1 tuning unit, but the summer adjustment unit of the present invention and * θ Μ 亦可 may be a layer. Other than the flow element 'only need to adjust the foaming gas 髀 攻 θ θ Β 札 札 札 札 札 札 札 札 札 札Fig. 4 is a view showing a modification of the organic metal vaporization supply device in one embodiment of the present invention. The flow rate adjusting portion 9 in Fig. 4 uses the mass flow controller Mi. In addition, since the configuration other than the flow rate adjusting portion 9 in Fig. 4 is the same as that of Fig. 1, the description thereof will not be repeated. Further, when the flow rate adjusting unit 9 of the present embodiment is used, the gas pressure on the upstream side of the laminar flow element F can be adjusted in accordance with the measured value of the pressure gauge P2 and the measured value of the pressure gauge p3, thereby adjusting the laminar flow. Component gas flow. As a result, since the mass flow controller for controlling the gas flow rate is not required, the simplification of the apparatus can be achieved. Further, such a gas flow rate regulator (flow rate adjusting portion 9) is effective for use in other vapor deposition apparatuses using a hydride vapor deposition (HVPE) method, in addition to the organic metal vaporization supply means. The HVPE method is disclosed in Japanese Laid-Open Patent Publication No. 2000-12900, and is a representative manufacturing method of a nitride-based compound semiconductor other than the MOCVD method, and is particularly suitable for producing a self-contained substrate of gallium nitride. ^^托法 Similar to the MOCVD method, a gas of ammonia, hydrogen, or nitrogen is used/hydrogen chloride gas is further used. Then, after properly controlling the flow rate, it is introduced into the reaction furnace. The control of the previous flow is done with an expensive mass flow controller. Further, when the gas flow rate adjuster of the present invention is used, since the flow rate of these gases can be controlled, the simplification of the apparatus can be achieved. Further, the gas flow rate adjuster of the present invention is characterized in that the flow rate fluctuation on the secondary side of the pressure fluctuation on the primary side (supply side) is smaller than that of the previous mass flow controller. The inventors of the present invention conducted the following experiments in order to confirm the effect of the gas flow regulator of the present invention. Specifically, it is prepared to: mass flow controller with nitrogen full scale 1 slm and mass flow control with full scale 50 slm 121662.doc -23- 200830372 The inventive gas flow regulator is used to compare these properties. Use a regulator to bring the gauge pressure to a primary pressure change of 〇2 Mpa of nitrogen. The primary pressure of nitrogen was varied in the range of 10 to 70 kPa at intervals of 1 second. The flow rate of nitrogen gas was set to 5 〇〇 seem, 20 slm, respectively. At this time, the flow rate change amount, the full scale of the gas flow regulator of the present invention is 1 slm, and the full scale of the soil is 0.4% ′ 50 Slm is ±2%. Further, the flow rate change amount of the prior gas flow rate adjuster is about 1, 5 to 4 times larger than the gas flow rate adjuster of the present invention. As a result, the gas flow regulator of the present invention essentially functions as a pressure changer that can withstand the primary side because the pressure control valve also functions as a bulker. Further, since the prior mass flow controller has a flow regulating valve downstream of the flow sensor, it is susceptible to fluctuations in the measured flow rate caused by the pressure fluctuation on the primary side. As apparent from the above, when the gas flow rate adjuster of the present invention is used, a simple structure can be realized, and the price is low, and high precision can be achieved. (Second Embodiment) Referring to Fig. 5, the M〇CVD apparatus according to the present embodiment includes an organic metal vaporization supply device 20, a gas supply path 19, and a film formation chamber 17. The organic metal vaporization supply device 20 and the gas supply path 19 are both connected to the film forming chamber 17, and gas different from each other is supplied to the film forming chamber 17. The organometallic vaporization supply device 2 of the present embodiment differs from the organometallic vaporization supply device of the first embodiment in that hydrogen gas or nitrogen can be used as the foaming gas and the diluent gas, and the foaming gas and the dilution gas can be used. The type of gas is used to switch the sonic nozzle. Hereinafter, the structure of the organic metal vaporization supply device 121662.doc -24- 200830372 20 will be described. The organic metal vaporization supply device 20 is provided with a connection path 15 which connects the foaming gas supply path 3 on the upstream side of the valve V2 with the diluent gas supply path 7 on the upstream side of the valve. Further, _ is provided in the foaming gas supply path 3 on the upstream side of the connection position of the connection path (4), and the dilution gas supply path is provided on the upstream side of the connection position of the connection path 15 with the gap V5. The V5 and V6 and the connection path 15 are switching mechanisms for switching the foaming gas supplied to the foaming gas supply path 3 and the type of the diluent gas supplied to the diluent gas supply path 7 between hydrogen and nitrogen (first switching) mechanism). Here, the organometallic gas supply path 5 includes the first supply path 5a, the second supply path 5b, and the film formation chamber supply path "and the exhaust path (four). On the downstream side of the specific position A, the organometallic gas supply path gives the path (4) The second supply path (4) is connected to the second supply path 5b downstream of the supply path (4) and the second supply path 5b. The organic side is more downstream than the connection position of the first supply path and the second supply path 5b.

The body supply path 5 is divided into red scorpions, and the other sleeves C are used as the sonic nozzles S1 of the first throttling portion, and are sequentially provided at the second Πν: ~ is the second throttling portion of the sound jet: m and The valve V8 switches the flow of the organometallic gas and the diluent gas between the first supply path 53 and the second supply (four): (different switching mechanism). The knife changing mechanism is on the side of the connection position of the first supply path 5a and the second supply path - 121662.doc •25·200830372 and is higher than the film forming chamber supply path 5c and the exhaust path 5 (1 on the upstream side of the diverging position) A thermometer Τ2 and a valve cymbal are provided in the mechanical metal gas supply path 5. A valve valve is provided in the film forming chamber supply path 5e, and a valve VII is provided in the exhaust path 5d. On the downstream side of the connection position of the connection path 15 And a valve V12 is provided on the foaming gas supply path 3 on the upstream side of the valve V2, and is connected to the foam gas supply path 3 on the downstream side of the laminar flow device F and the organic gas supply on the upstream side of the specific position a. In the manner of the path 5, the valve v is set to 3. In Fig. 5, the flow rate q of the gas passing through the laminar flow element is expressed by the above formula. Further, in Fig. 5, the gas flow rate Q through the sonic nozzles Si and S2 It is represented by the above formula (1). Further, the structure of the organic metal vaporization supply device 2 is not the same as that of the organic metal vaporization supply device of the first embodiment shown in Fig. 1. Mark the same symbol on the same component, not heavy In the organic metal vaporization supply device 2 of the present embodiment, an organic metal gas is supplied to the film forming chamber to form a film as described below. / First, the valve is switched by opening the valve V12. V5 and valve v6, chlorine and gas are used as the foaming gas, and are supplied to the foaming gas supply path 3. That is, when the foaming gas is hydrogen, the wide V5 is opened, and the I closed valve V6 %. When nitrogen is used as the bubble gas, the valve V5 is closed, and the valve V6 is opened. The flow rate of the foaming gas is adjusted by the flow rate adjusting unit 9, and is introduced into the storage container 1 via V3. At this time, the valve is closed. The organometallic gas and the partial foaming gas generated from the organometallic raw material 13 are introduced into the organometallic gas supply path 5 via the valve V4. 121662.doc -26- 200830372 Two places: before the flow of the foaming gas is stabilized' By closing the reading and opening the valve vn ', the foaming gas flows to the exhaust path 5d, and the day's foaming gas I# is treated as V10, and after the s body muscle is 疋%, the valve π is closed. And opening the inter-body. k passes through the film forming chamber supply path 5e, and supplies the film forming chamber 17 Aiki Further, by opening the valve V1, the same type of disk is supplied foaming gas dilution gas dilution gas supply path 7 by the diluent gas.;

= its fortune, and supplied by the dilution gas supply path 7: a gas t, a feed path; ^ ^ a dilution gas supplied to the organometallic gas supply path $ mixed with the organometallic gas and the foaming gas, and used as a mixed gas The sonic nozzle of the mixed gas is switched in accordance with the type of the dilution gas and the foaming gas (switching step). If hydrogen is used as the diluent gas and the foaming gas, open the valve V7' and close the valve ¥8. Thereby, the mixed gas passes through the first supply path 5a and the sonic nozzle S1. Further, in the case where nitrogen gas is used for the diluent gas and the foaming gas, the valve V7 is closed, and the valve V8 is opened. Thereby, the mixed gas passes through the second supply path % and the sonic nozzle S2. The mixed gas of the sonic nozzle " or S2 is supplied to the film forming chamber through the organic metal gas supply path 5, the valve V9, the film forming chamber supply path 5c, and the valve v 1 以 at a suitable flow rate. Then, the organic metal gas is used. Other gases supplied from the gas supply path 19, such as a compound semiconductor film. The compound semiconductor system forms an AlxGayInKx.yN (〇gx^l, 〇$y$i, o^x+y^i) film, and the organic metal material 13 such as the use of trimethylaluminum (TMA), such as the self-gas supply path 19 to supply trimethyl gallium (TMG) and triterpene (TMI) and I as a v-group of raw materials I21662.doc -27- 200830372 ammonia ( Nh3) 〇 In the present embodiment, the organometallic metallization supply device of the '古'r can obtain the vaporization of the organic metal of the first embodiment": in addition to the fruit, the following effects can be obtained: The same effect organometallic gas supply path 5 is given to the path 讣, and the sonic speed (four) scooping path is from the fifth performance to the second day, and the purple sound includes: the first supply path 觜S1 and the sonic speed set in the second supply path 5b, 5a盥筮-人a 角弟—Supply path (four) brother - for Post connection path than the downstream side of position A and the downstream side of the sound. The organic metal vaporization supply device is operated _: cattle and = switch between the chlorine and nitrogen to supply the foaming gas supply path 3; the valve type V5, the valve V6 and the connection path 15 for the body type, ^ the second body of the body Supply (4) (4) Supply path V8. The valve V7 for the flow path of the mouth body and the inlet: the organic metal vapor deposition method in the form of the application, the sonic nozzle package and the sonic nozzle S2, and the film forming step includes mixing according to the type of dilution gas == The sonic nozzle of the gas is switched from the Sonic He bird S 1 to the switching step of S2. Mouth ^ choice = type 'sonic nozzle Si and sonic spray = two speeds to use. As a result, it is possible to suppress a change in the flow rate characteristics of the gas introduced into the film forming chamber due to the use of the foamed ruthenium used. = Bu 1 can supply chlorine in the gas supply path 3, and switch the flow path of the I gas to the first supply path 5, and the gas pressure on the sonic nozzle is a specific value when passing through the sonic nozzle In the gas flow, nitrogen is supplied to the foaming gas supply path 3, and the organic metal gas I2I662.doc -28·200830372 汔: is switched to the second supply path 5b, and the upstream side of the sonic nozzle S2 is #冬甏When the force is the above specific value, the sonic nozzles S1 and S2 are formed by the gas flow rate of the sonic nozzle S2. When the type of gas is different, the conductivity of the idle nozzle is different. Therefore, when the gas type is changed, the same gas flow rate is used when the same sonic nozzle is used. Therefore, by configuring the sonic nozzle as described above, even if the foaming gas used is more nitrogen-derived from hydrogen, the flow rate of the gas introduced into the film forming chamber can be made equal. (Third Embodiment) The difference between the organic metal vaporization supply device 2 of the second embodiment and the organic metal vaporization supply device of the second embodiment shown in Fig. 5 is The dilution gas flow rate measuring unit 16 is used. Hereinafter, the structure of the organic vaporization supply device 20 will be described. A diluent gas flow rate measuring unit 16 is provided between the valve V1 and the pressure gauge ρι in the dilution gas supply path 7. The dilution gas flow rate measuring unit 16 includes a pressure gauge p4 as a diluent gas pressure gauge from the upstream side, and a thermometer 13 as a laminar flow element for the diluent gas element. Further, the foaming gas supply path 3 includes a first foaming gas supply path 3a and a second foaming gas supply path 3b. On the downstream side of the connection position with the connection path 15, the first inflation gas supply path 3a and the second inflation gas supply path 3b are branched, on the downstream side of the diverging position, and on the upstream side of the position where the pressure gauge p3 is provided. The first foaming gas supply path 3a is connected again to the second foaming gas supply path 3b. In the first foaming gas supply path 3&, the valve V12A, the valve V2A, the pressure gauge P2A, and the laminar flow element F1A are sequentially provided from the upstream side. Valves V2a and 121662.doc • 29- 200830372 Pressure gauges P2A are electrically connected to each other. The flow rate adjusting unit 9A for regulating the flow rate of the gas flowing into the first bubble generating gas supply path 3a is constituted by the valve V2A, the pressure gauge P2a, the laminar flow element F1A, the pressure gauge P3, and the thermometer T1. That is, the gas pressure on the downstream side of the laminar flow element F1A measured by the pressure gauge P3 and the laminar flow element FIA measured by the thermometer T3 by the gas pressure on the upstream side of the laminar flow element F1A measured by the pressure gauge P2A The temperature of the gas passing through the first foaming gas supply path 3a is calculated, and the gas flow rate through the first foaming gas supply path 3& is adjusted according to the gas flow rate control valve V2A. Similarly, in the second foaming In the gas supply path 31), the valve V12 B, the valve V 2 B, the pressure gauge p 2 B, and the laminar flow element f 1 b , the valve V2B, and the pressure gauge P2B are electrically connected to each other from the upstream side. The flow rate adjusting unit 9B for regulating the flow rate of the gas flowing into the second blowing gas supply path 3b is constituted by the valve V2B, the pressure gauge P2B, the laminar flow element F1B, the pressure gauge P3, and the thermometer. The flow rates of the gases passing through the laminar flow elements FI A and F1B at the same time on the upstream side and the downstream side are different from each other. When the pressure difference between the gas pressure on the upstream side and the gas pressure on the downstream side is a certain value, the laminar flow element F丨A is designed to pass 300 seem gas, and the laminar flow element F1B is designed to pass 2 〇sccm of gas . The structure of the organic metal vaporization supply device 2 is the same as that of the organic metal vaporization supply device of the second embodiment shown in Fig. 5. Therefore, the same reference numerals will be given to the same members, and the description thereof will not be repeated. When the organometallic vaporization supply device 2 of the present embodiment is used, the flow rate of the foaming gas can be changed by 121662.doc -30-200830372. That is, when a large amount of the foaming gas flows into the foaming gas supply path 3, the valve V12A is opened and the valve V12B is closed in a state where the valve V5 or the valve V6 is opened, so that the foaming gas flows into the first foaming gas supply. Path 3a. Further, when a small amount of the foaming gas flows into the foaming gas supply path 3, when the valve V5 or the valve v6 is opened, the valve V12B is opened, and the valve V12A is closed, so that the foaming gas flows into the second foaming gas supply path 3b. ° Furthermore, k can be more foamed and the type of diluent gas. That is, when the diluent gas and the foaming gas are switched from hydrogen to nitrogen, the valve V6 is closed and the valve V5 is opened in the same manner as in the second embodiment. At this time, the valve V8 is closed and the valve V7 is opened, and the sonic nozzle is switched from the sonic nozzle S2 to the sonic nozzle S1. Here, since the dilution gas and the foaming gas are switched, the nitrogen remains in the Bedding Valley 1 The gas passing through the sonic nozzle s is not only hydrogen but also nitrogen. Since the conductance of the money is smaller than the conductance of hydrogen, in the case of hydrogen containing nitrogen, the gas flow rate through the sonic nozzle S1 is reduced compared to pure hydrogen, resulting in film formation instability. In addition, this cannot be controlled with a certain gas flow rate due to the flow rate. Furthermore, the type of film depending on the film may cause a serious influence on characteristics. When a ternary mixed crystal film represented by IM3ahN is formed, # gas contains hydrogen, and it is difficult to put indium (10), and the indium combination is extremely lowered. Therefore, the type of gas containing the foaming gas is limited to t gas (including ammonia). That is, when the foaming of hydrogen gas is switched to the foaming of nitrogen gas, pre-expansion must be sufficiently performed, and the gas in the storage vessel is replaced with gas. Therefore, when the diluent gas and the foaming gas are switched, pre-expansion is performed in order to discharge the remaining gas of 121662.doc 31 200830372.

When the gas flow rate of the idling nozzle S1 is decreased, the pressure on the upstream side of the sonic nozzle S1 is increased, and the measured value of the pressure gauge P1 is increased. Since the coffee is controlled in such a manner that the pressure pi = value is maintained, the measured value of the pressure is reduced in the flow of the dilution gas of the 8-inch closed valve VI' dilution gas supply path 7. When the outer ringing is performed after the switching, the new diluent gas and the foaming gas are filled in the storage container i, and the flow rate of the diluent gas is increased again to converge to a certain value. When the organometallic vaporization supply device 20 of the present embodiment is used, by measuring the flow rate change of the diluent gas (measurement step), the flow rate of the gas to be diluted is converged to a constant value, and then film formation is performed, thereby saving waste of pre-expansion. And shorten the time of pre-foaming. The measurement of the flow rate of the diluent gas is specifically carried out by the following method. The gas pressure PB 1 ' on the upstream side of the laminar flow element F2 is measured by the pressure gauge P4. The gas pressure PB2' on the downstream side of the laminar flow element F2 is measured by the pressure gauge P1, and the temperature τ of the laminar flow element F2 is measured by the thermometer T3. . Then, use the above formulas (2) and (3) to calculate the laminar flow component! The flow rate of the gas of ?2. Further, in the present embodiment, the dilution gas flow rate measuring unit 16 is configured by the pressure gauge P4, the laminar flow element F2, and the thermometer T3. However, the present invention may be constituted by a mass flow meter in addition to this case. Dilution gas flow rate measuring unit. Further, in the second and third embodiments, the case where hydrogen or nitrogen is used for the foaming gas and the diluent gas system may be used. However, a gas other than hydrogen or nitrogen may be used, and argon and helium may also be used. Further, in the present embodiment, it is shown that the same type of gas is used for the gas and the diluent gas system in the foaming 121662.doc -32-200830372; however, the gas of the foaming gas and the diluent gas may be different from each other. (Fourth Embodiment) The semiconductor manufacturing apparatus of the present embodiment includes a base plate processing to 31, a gas supply path 3 3 to 3 3 e as a plurality of official roads, and a flow rate. Adjustment unit 9 (gas flow regulator). Each of the gas supply paths 33a to 33e is connected to the substrate processing chamber 31, and each of the gas supply paths ... to ... is provided with each of the flow rate adjusting portions 9. Further, the gas supply paths ... to ... are connected to each other at a position closer to the upstream side of the flow rate adjusting portion 9, and a pressure reducing valve V3i is provided as needed in the gas supply path 33 on the upstream side of the position b. Referring to Figs. 7 (4) and (8), the flow rate adjusting portion 9 is configured to adjust the flow rate of the gas passing through the respective gas supply paths 33a to 33e, and has the same configuration as the flow rate adjusting portion 9 shown by _. That is, the flow rate adjusting unit 9 includes, in order from the upstream side, a valve V2 (pressure adjusting unit), a pressure gauge p2 (second pressure gauge), a laminar flow element F, a pressure gauge p3f, and a N-inch. Brother pressure gauge) with a thermometer Ding Wei. Valve V2^ • Pressure gauge P2 is electrically connected to each other. The pressure gauge (4) is used to measure the home force on the upstream side of the laminar flow element F, the pressure gauge p3 is used to measure the bucking force on the downstream side of the laminar flow element F, and the thermometer is used to measure the temperature of the laminar flow element F. By. The gas flow rate through the laminar flow element F can be adjusted by the gas pressure PB1 on the upstream side of the laminar flow material and the gas pressure pB2 on the downstream side of the laminar flow element F and the temperature of the laminar flow element f. In the semiconductor device of the present embodiment, the semiconductor device is manufactured by the following method. First, it will become the processing of the "substrate configuration (four) board processing into 3 1 . Secondly, using the dust reduction V3 i, the gas pressure of the gas supply path 33 introduced into 121662.doc -33 - 200830372 is appropriately adjusted. Continue, in each gas The supply paths 33a to 33e* adjust the gas pressure contact on the upstream side of the laminar flow element f by the valve 乂 2 in accordance with the value of the pressure gauge P2. Thereby, the gas of the laminar flow material is supplied as a desired flow rate through each gas supply. The path 33 & to 33e is supplied to the substrate processing chamber 3 in the substrate processing chamber 31, and a semiconductor such as a nitride-based semiconductor is formed on the substrate by a vapor deposition method such as HvpE method or MOCVD method. The exhaust gas is discharged from the substrate processing chamber 31 through the exhaust gas pipe 37. The flow rate adjusting unit 9 of the present embodiment is provided to be adjustable by the upstream gas pressure PB1 and the downstream gas pressure PB2. The gas flow, the laminar flow element FH is the constant pressure of the pressure pB2, used to measure the 力L force PB 1 [force meter p2, the temperature leaf T1 for determining the temperature of the laminar flow element F and for regulating the gas pressure PB 1 valve v2. Further, the semiconductor manufacturing apparatus according to the present embodiment includes: a substrate processing chamber 31 for processing a substrate; a plurality of gas supply paths 33a to 33e for supplying gas to the substrate processing chamber 31; and The flow rate adjusting unit 9 of each of the plurality of body supply paths 33a to 33e is provided. The respective rolling body supply paths 33a to 33e are connected to each other at the position B. Further, the semiconductor manufacturing method in the present embodiment uses the semiconductor of FIG. The method for manufacturing the device and the device includes the step of adjusting the pressure pB ^ by the valve v2. The wood flow control unit 9, the semiconductor manufacturing device, and the semi-system method can be used according to the pressure gauge. The measured value of P2 and the measured value of the pressure gauge P3 are used to adjust the gas pressure PB1, thereby adjusting the gas passing through the laminar flow element 121662.doc -34-200830372F. As a result, since it is not required for controlling the gas Since the mass flow controller of the flow rate can simplify the device, the influence of the gas flow rate change and the pressure change on the upstream side of the flow sag portion 9 is small, and can be higher than the mass flow controller. In particular, in the semiconductor manufacturing apparatus shown in Fig. 7, a plurality of rolling body supply paths 33a to 33e are connected in parallel. Each of the gas supply paths 33 is distributed as a gas for supplying a raw material, Excluding gas or dilution gas, etc., according to the purpose of the gas flow path. Previously, the mass flow controller was provided on each gas supply path 33 &~. The mass flow controller _ has a variety of self-sufficiency of hundreds of s 1 m In the semiconductor manufacturing apparatus shown in Fig. 7, when the flow rate of the gas flowing into one diameter is changed, the upstream side (gas supply path: 3 = k is also moved). When the mass flow controller having a large full scale is provided in each of the gas supply paths 33a to 33e as the flow rate adjusting unit 9, the pressure on the upstream side of the flow rate adjusting unit 9 fluctuates, and the flow rate of the gas flowing into the other gas supply path Have a major impact. As a result, in the conventional semiconductor manufacturing apparatus, the body flow rate cannot be controlled with high precision. Here, in order to reduce the influence of the pressure fluctuation on the upstream side on the flow rate of the gas flowing into the other gas supply path, it is considered to separately provide the pressure reducing valve on the upstream side of each mass flow controller or inside the mass flow controller. Set the automatic pressure reducing valve. However, the A and other methods require a new structure of the pressure reducing valve and the automatic pressure reducing valve, resulting in an increase in cost. Further, in the present embodiment, since the flow rate adjusting unit 9 uses the laminar flow element F, the influence of the pressure fluctuation on the upstream side on the gas flow rate can be reduced in the case of the enthalpy, and the increase in cost can be suppressed by 121662.doc -35-200830372. Furthermore, a wide range of flow control is possible. In particular, a semiconductor manufacturing device towel is often supplied with the same gas (such as hydrogen, nitrogen, ammonia, or hydrogen chloride (HC1) gas) through a gas supply line that is connected to the substrate, and thus the present invention is use. X negative

Further, in the present embodiment, the flow rate adjusting unit 9 provided in each of the gas supply paths 33a to 33e is used in the semiconductor manufacturing apparatus of the present invention using the flow rate adjusting unit of Fig. 7(b). In at least one of the gas supply paths 33a to 33e, the method of FIG. 7 (匕) is provided, and the adjustment portion is used as the flow rate adjusting unit 9. In this case, a part of the mass adjustment unit 9 may also use a mass flow controller. Further, Fig. 7(a) shows only the i group gas supply path handles 33a to 33e' for supplying the seed gas, but an array: body supply path may be provided depending on the type of gas used. That is, as shown in FIG. 8, 1 may be provided with a gas supply path from the gas supply path 34, and a gas supply path from the gas supply path 34, and a gas supply path, in addition to the gas supply paths 33a to ... which are different from the gas supply path 33. 35 different gas supply paths 仏 仏 仏 'provide a gas flow regulator on each gas supply path' and each gas supply path is connected to the substrate, chamber 31. Thereby, it is possible to realize a semiconductor manufacturing apparatus capable of controlling a large amount of gas flow rate with high precision and at low cost. [Example 1] Using a metal vaporization supply device shown in Fig. 6, a trimethylbenzene (TMGa) was foamed to measure the flow rate of the diluent gas during foaming. In fact, first close V5 and V12B, and open v^vi2A, in storage 121662.doc -36- 200830372

A nitrogen flow rate of 50 seem was introduced into the interior of the vessel 1. At this time, the valve V7 is closed, and the valve V8 is opened, and the sonic nozzle S2 is used to adjust the flow rate of the organometallic gas. Then, after a certain period of time, the valves ¥6 and v12a are closed, and the valves V5 and V12B' are opened, and hydrogen gas of a flow rate of 2 〇 seem is introduced into the storage container 1 for a certain period of time. At this time, the valve V8 is closed, and the valve V7 is opened, and the sonic nozzle S1' is used to adjust the flow rate of the organometallic gas. Further, after a certain period of time, the valve V5 was closed, and the valve V6 was opened, and a nitrogen flow of 20 seem was introduced inside the storage container}. At this time, the valve V7 is closed, and the valve V8 is opened, and the sonic nozzle S2 is used to adjust the flow rate of the organometallic gas. In the foaming, the temperature of the storage vessel was maintained at 2 Torr: and the pressure of the foamer was maintained at 250 kPa by controlling the width VI. The flow rate of the dilution gas is measured by the dilution gas flow rate measuring unit 16. Referring to Figs. 9(a) and (b), after switching the foaming gas and the diluent gas to a hydrogen gas having a flow rate of 20 sccm in a flow rate of about 1600 seconds from a flow rate of 50 sccm, the flow rate of the hydrogen gas of the diluent gas is temporarily lowered to 8 Torr. The degree of 〇sccm, then increased again, and converges to about 900 sccm. Further, after switching the foaming gas and the diluent gas from hydrogen gas at a flow rate of about 2 〇 seem to a flow rate of about 20 sec, the flow rate of the nitrogen gas of the diluent gas hardly decreased while maintaining about 960 seem. From these results, it is understood that the dilution gas flow rate measuring unit 16 is provided to determine whether or not the replacement of the foaming gas inside the storage container is completed. In addition, it is understood that the switching from nitrogen to hydrogen is more frequent than the switching from hydrogen to nitrogen, and it takes a long time to pre-expand. [Embodiment 2] This embodiment is a response to the actual flow rate response to the set value of the flow regulator 121662.doc -37-200830372. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the configuration of an experimental apparatus in a second embodiment of the present invention. Referring to Fig. 1, the experimental apparatus of the present embodiment includes a pressure reducing valve V4 i and a weir V42, a flow 1 adjusting portion 4 i , a pressure gauge p4 , and a laminar flow element f4 . In the gas supply pipe 43, from the upstream side, a pressure reducing valve V41, a flowing enthalpy 41, a pressure gauge p41, and a laminar flow element F4 i are provided in this order. Further, the gas supply person 43a is branched from the gas supply pipe 43 between the pressure reducing valve V41 and the flow rate adjusting portion 41. A valve V42 is provided in the gas supply pipe 43 & The gas supply pipe 43 communicates with the atmosphere on the downstream side, and the gas supply pipe 43a communicates with the exhaust port on the downstream side. In the present invention, the flow regulating unit 4 is disposed as the flow regulating unit 4, and the rogue arranging unit 9 shown in Fig. 1 is disposed as an example of the present invention. In the valve V2 of the flow rate adjusting portion 9 in the example of the present invention, a solenoid valve is used. The so-called solenoid valve flows into the current flowing through the coil. The valve is controlled by the generated magnetic field. Further, as the flow rate adjusting unit 4, the mass flow control including the piezoelectric valve is controlled as the comparative example i. The piezoelectric valve controls the valve by compressing and expanding the piezoelectric element by the presence or absence of electric current. Further, a mass flow control thief including a thermal valve was placed as the flow rate adjusting unit 41 as Comparative Example 2. In the case of a hot type valve, a current is supplied to the resistor body to generate heat, and the heater is controlled by the heat. The experimental apparatus was used and the experiment was carried out by the following method. The flow rate setting value of the flow rate adjusting unit 41 is set to 10%, 5〇%, and 1〇〇()/ of the full scale (100 sccm) of the flow rate adjusting unit 41 from the 完全 (completely inflow state). And increase sharply. Then, the gas flow rate flowing into the flow rate adjusting portion 41 is calculated from the value of the pressure gauge P41 and the atmospheric pressure, and the gas flow rate on the downstream side is measured. Then, measurement 121662.doc -38- 200830372 The gas flow rate on the downstream side converges to 〇 5q/ of the set value of the flow regulating unit. Within the time. The gas system uses nitrogen and hydrogen. In addition, the response speed of the pressure gauge P41 is less than 1 〇 msee, and the delay of the measurement system is negligible due to the gas pressure, volume, and the like. Further, the pressure on the upstream side of the flow rate adjusting portion 41 is adjusted to 0.3 MPa by the pressure reducing valve V41. The results of this example are shown in Table 2. [Table 2] Gas type and flow rate change Comparative Example 1 of the present invention Comparative Example 2 Nitrogen·0 - ^10% 0.7 sec 5 · 0 sec 5.5 sec.: 0 - > 5 0% 1 · 7 sec 2.6 sec 14.5 Second nitrogen · 0 ~ ^ 10 0 % 2 · 8 seconds 1.8 seconds 22.0 seconds Hydrogen: 0 - 10% 0.7 seconds 4.3 seconds 2.5 seconds Hydrogen: 0 - > 50% 1.4 # ~ ' 5.0 seconds 8.0 seconds Hydrogen: 0-100 % 2·8 sec. 1·9 sec. 10.0 sec. Referring to Table 2, the same result can be obtained even when any of nitrogen and hydrogen is used. That is, in the case where the gas flow rate was increased to 1% by weight and the case was increased to 50%, the convergence time of the examples of the present invention was shorter than that of Comparative Examples 1 and 2. Further, in the case where the gas flow rate was increased to 1 〇〇%, the convergence of 8% of the present example was the same as that of Comparative Example 1, and was shorter than the convergence time of Comparative Example 2. From the above results, it is understood that the gas flow regulator of the present invention shows a very rapid response. [Embodiment 3] In this embodiment, the pressure change on the upstream side is investigated for the scene of the gas flow on the downstream side. Specifically, the experiment apparatus of Fig. 使用 was used, and the experiment was carried out by the following method. By the opening and closing of the valve V42, the pressure on the upstream side of the regulating portion 41 of the flow rate 121662.doc -39-200830372 is rapidly changed by 变动·〇5 MPa in the case of nitrogen and 0.03 MPa in the case of hydrogen. Then, the gas flow rate into the laminar flow element F41 is calculated from the value of the pressure gauge P41 and the atmospheric pressure, and the gas flow rate on the downstream side is measured. The gas flow regulator is set to 5 〇 sxcm. Then, the change in the flow rate of the gas to the downstream side is measured to converge to the maximum value of the amount of change in the gas flow rate on the downstream side within 5% of the full scale.

The result of the convergence time of the gas flow rate was changed, and the conditions other than the test were the same as in the second embodiment. The knot number of the maximum value of the amount of change in the flow rate on the downstream side indicates that the flow rate of the gas flow on the downstream side is decreased. It is shown in Table 3' and the results on the downstream side are shown in Table 4. In Table 4, the positive sign plus the minus sign indicates the gas on the downstream side [Table 3]

121662.doc 40· 200830372 [Table 4] Gas type and pressure change Comparative Example 1 of the present invention Comparative Example 2 Nitrogen: MPa - 2.5% + 60% - 13% - +9.8% Nitrogen: 0.25 MPa - ^ 〇. 3 MPa + 7.5% ~ -2.2% -42% -23% ~+9.8% Hydrogen: 0.28 MPa->〇.25 MPa -4.0% +20% +20% Hydrogen: MPa +4.5% -10% -34% Reference In Tables 3 and 4, the convergence time of the example of the present invention is the same as the convergence time of Comparative Example 1, and the convergence time is shorter than that of Comparative Example 2. In addition, this

The amount of change in the inventive example is significantly smaller than the amount of change in the comparative examples 2 and 2. As a result, it is presumed to be due to the structure of the mass flow controller. That is, the mass flow controller has a structure for measuring the pressure in a bifurcation path diverging from the gas supply path, and controlling the pressure of the inflow gas supply pipe in accordance with the pressure. Therefore, when the pressure on the upstream side changes drastically, the gas in the gas supply pipe is retained (four). The pressure in the branch path cannot follow the pressure in the gas supply pipe. As a result, the gas density in the gas supply pipe deviates from the gas: degree in the branch path, and the correct flow rate cannot be measured, and the gas flow rate on the downstream side is adversely affected. Further, in the example of the present invention, since the pressure on the upstream side is made by reading the door, the influence of the pressure fluctuation on the upstream side on the downstream body flow rate is small. From the above results, it is understood that when the gas producing apparatus of the present invention is used, the pressure change on the upstream side has a small influence on the lower side. 121662.doc -41 - 200830372 [Embodiment 4] This embodiment examines the influence of temperature change on the flow rate adjusting portion. Fig. 11 is a view schematically showing the configuration of an experimental apparatus in a fourth embodiment of the present invention. Referring to Fig. 11, the experimental apparatus of this embodiment is provided with a pressure reducing valve ν4, a mass flow controller M41, a flow rate adjusting portion 41, and a constant temperature bath 45. The gas supply pipe u is provided with a pressure reducing valve V41, a mass flow controller M41, and a flow rate adjusting portion 41 in this order from the upstream side. In addition, the flow adjustment section is "configured in the thermostat

45 inside. The flow rate adjusting unit 41 outputs the flow rate of the gas flowing into the flow rate adjusting unit 104. In the experimental apparatus, the flow rate adjusting unit 9 in which the flow rate adjusting unit 41 is disposed is used as an example of the present invention. In addition, as a comparative example, a mass flow controller including a piezoelectric valve is disposed as the flow rate adjusting unit 41 as a comparative example, and a gas flow rate adjuster including a thermal enthalpy is disposed as a flow rate adjusting unit 41 as a comparison. Example 2. The experiment was carried out using the experimental apparatus' and the experiment was carried out by the following method. By reducing the waste, the force is adjusted, and the mass flow controller M4 "the peripheral gas flow 1, the sub-flow continues to flow into the gas in the flow regulating portion 41. The gas flow rate is adjusted by the flow rate adjusting unit 41 without changing the gas flow rate, and the valve of the flow rate adjusting unit is fully opened. In this state, the temperature of the flow rate adjusting unit 41 is changed to the order by the temperature of the constant temperature bath 45. The range of the gas flowing into the flow rate adjusting unit 41 was measured, and the maximum value of the amount of change in the gas flow rate was measured. The other experimental conditions were the same as in the second embodiment. The results of the present example were shown. In Table 5, the maximum value of the amount of change in the gas flow rate of Table 5 is represented by the ratio (percentage) of the full scale of the flow regulating portion 41 of 121662.doc • 42·200830372. [Table 5] Temperature change Example 0.9 of the present invention % Example 1 - Comparison 1 6% 25〇C-40 〇C 40°C —10°C 1,4% .^8% 3^0%" 10°C—25°C 1.1% __L2% 1.7% Reference In Table 5, although the gas flow of a certain flow rate is actually changed, the measured value of all the flow rate adjusters is changed. However, regardless of how the temperature of the flow rate adjusting portion 41 is varied, the variation ratio of the measured values of the present invention is compared. And the amount of change in the measured value of 2 is greatly reduced. The measurement system is caused by the structure of the negative flow controller. That is, since the mass flow controller measures the flow rate by the thermal sensor in the path of the tool, the measured value is greatly affected by the temperature fluctuation of the mass flow controller. In addition, in the example of the present invention, the value of the measuring device 1 is corrected according to the temperature of the laminar flow element F measured by the thermometer, so that the measured value is not easily affected by the temperature. In the gas flow regulator and the half-body 1 ^ device, the influence of the temperature change on the flow rate adjusting portion is small. [Schematic Description] FIG. 1 is a schematic view showing the organic metal vaporization supply device in the first embodiment of the present invention. Fig. 2 shows a relationship between the gas pressure PA1 on the upstream side of the sonic nozzle S and the gas flow rate through the sonic nozzle. Fig. 3 shows the gas pressure p B丨 on the upstream side of the laminar flow element F and the downstream side. Figure 21 is a diagram showing the relationship between the pressure difference of the body PB2 and the gas flow rate through the laminar flow element f. Figure 4 is a diagram showing the organic matter in the first embodiment of the present invention. In the case of the MOCVD apparatus configuration diagram of a modification of FIG vaporization supply apparatus. Figure 5 is a schematic structural diagram showing a second embodiment of the present invention, MOCVD apparatus. FIG. 6 schematically shows a third system embodiment of the present invention.

Fig. 7 (a) is a view schematically showing the configuration of a semiconductor manufacturing apparatus in a fourth embodiment of the present invention. Fig. 7 (b) is a view schematically showing the configuration of a flow rate adjusting portion in the fourth embodiment of the present invention. . Further, the structural diagram of a modification of the semiconductor manufacturing apparatus in the four embodiments of the present invention is not shown. Fig. 9(a) is a flow chart showing the flow rate of the foaming gas flowing into the flow rate adjusting portions 9 and 9B in the embodiment of the present invention. A flow rate change diagram of the diluent gas which is supplied to the core loss path 7 by the dilution gas in the first embodiment of the present invention. The σ 囷 系 概略 schematic diagram shows the structure of the experimental device in the second embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The structure of the experimental apparatus in the fourth embodiment of the present invention is a schematic diagram showing the structure of an organic metal vaporization supply apparatus which is not shown in the prior art. [Main element symbol description] 121662.doc -44 - 200830372 1 > 101 3 > 103 3a 3b 5,105 5 a 5b 5c

7, 107 9, 9A, 9B, 41 10, 45, 110 11 13 15 16 17

19, 33, storage container foaming gas supply path, first foaming gas supply path, second foaming gas supply path, organic metal gas supply path, first supply path, second supply path, film forming chamber supply path, dilution gas supply path, flow rate adjusting unit The constant temperature tank pressure adjusting unit organic metal raw material connection path dilution gas flow rate measuring unit film forming chamber gas supply paths 33a to 33e, 34, 34a to 34e, 35, 35a to 35e 20 31 37 43 , 43a organic metal vaporization supply device substrate processing chamber Exhaust gas pipe gas supply pipe I21662.doc -45 - 200830372

A F, F1A, FIB, F2, F41 Ml, M41, M101, M102 PI, P2, P2A, P2B, P3, P41, position Laminar flow element Mass flow controller Pressure gauge

P101 S Sonic nozzle S1 First throttle S2 Second throttle T1 ~ D3 Thermometer VI, V2A, V2B, Valves V3~V12, V12B, V13, V42, V101~V106 V31, V41 Pressure reducing valve 121662.doc -46-

Claims (1)

200830372 X. Patent application scope: 1 · An organic metal vaporization supply device, comprising: a valley (10) (1) for storing an organic metal raw material (η); a gas supply path (3) connected to The container is for supplying a foaming gas to the organic metal raw material; the organic metal gas supply path (5) is connected to the container, and ===(17) is supplied to the organic metal produced in the container a gas and a dilution gas for diluting the organometallic gas; a dilution gas supply path (7) connected to the organometallic gas supply path, and supplying the diluent gas to the front gas supply path; An adjusting portion (9) is disposed on the foaming gas supply path and configured to adjust a flow rate of the foaming gas; a pressure adjusting portion (11) for adjusting the dilution gas force; and a flow portion (7) 'the system is disposed at a position other than the connection position between the organometallic gas supply path and the dilution diluent supply path (the above-mentioned organometallic gas supply path on the Am# side; the throttling portion can be adjusted by the gas pressure on the upstream side The flow rate of the body passing through; 2. The organic metal vaporization supply device of claim 2, wherein the flow dam section (7) comprises: a component for foaming gas (F), which is adjustable by the gas of the i-side a gas flow rate through which the pressure and the gas pressure on the downstream side pass; and a foaming gas force adjustment unit (V2) which is disposed on the upstream side of the gas-using member of the above-mentioned Z I21662.doc 200830372 and used to adjust the foregoing The pressure of the foaming gas supply path (3). The organic metal vaporization supply device according to Item 1, wherein the organic metal milk supply path (5) comprises: a first supply path (5a) and a second supply a path (5b), wherein the throttle unit includes a first throttle unit (S1) provided in the first supply path and a second throttle (S2) provided in the second supply path, The first supply path and the second supply path are connected to the downstream side of the first throttle portion and the second throttle portion on the downstream side of the connection position (A), and the step ▲ is provided with: a first switching mechanism ( V5, V6, 15), which is used to switch the type of μ miL between the first foaming gas and the second foaming gas; and the knives change mechanism (V7, V8) _ '...川〜隹刖回弟一贤飨峪: switching the flow path of the organometallic gas and the diluent gas between the second supply path. 4. = the organometallic vaporization supply device of the third item, wherein / The gas supply path (3) is supplied with the first right m m m ^ bubble emulsion, and when the flow path of the aforementioned Qiang Meng gas is switched to the first 罘 supply path (5a), When the gas plant on the upstream side of the ministry is based on a specific value, the gas flow through the second and second streams is '· and When the foaming gas supply path is switched to the upstream of the portion of the organometallic gas, the "second supply" (5b), and the second throttle and the upstream side of the p are the specific values. In the case where the gas flow rate of the venting portion is equal, the younger one is J stone type, and constitutes the first throttling unit 121662.doc 200830372 (S1) and the aforementioned _ ^ * Le Yilang flow unit (S2). An organic metal vaporization supply device, further comprising a diluent gas, a solidification portion (16), disposed on the diluent gas supply path (7), and used for The flow rate of the aforementioned diluent gas was measured. 6. The request item S Xi Shi ^. The organometallic vaporization supply device, wherein the aforementioned dilution gas flow rate measurement ^, #(16) comprises: a component for dilute gas (F2), which is adjustable by means of upper, lower, and The pressure of the gas passing through the side and the pressure of the gas on the downstream side of the household, •, +, *; the pressure of the dilution gas (P4), which is determined by the above-mentioned dilution gas field _ The pressure on the side; and the thermometer (T3), which is used to measure the temperature of the component for the diluent gas, /, and 7.' An organometallic vapor deposition apparatus comprising: the organometallic vaporization supply device (20) of claim 1; the gas a-pass enthalpy 9}, which is used to convert other gases used for film formation into a chamber (17); and the film forming chamber' is used for forming a film using the above-described organometallic gas and the above other carcass. 8. An organometallic vapor deposition method comprising: a hair amount adjustment step of adjusting a flow rate of a foaming gas, and supplying the foregoing: a rolled body to an organic metal raw material (13); and a force adjustment step And adjusting the pressure of the diluent gas; the δ step is performed after the step of adjusting the flow rate and the step of adjusting the pressure, and mixing the organic metal raw material and the diluent gas to obtain a mixed gas; and the organic body The film forming step is carried out by the throttling portion (5), 12I662.doc 200830372, and the film forming process is performed by the mixed gas to form a film by the throttling portion (5), 12I 662.doc 200830372. The flow portion can adjust the gas passing through the gas pressure on the upstream side. (5) a method of vapor deposition of a diorganometallic metal, wherein the throttling portion membrane is a flow portion (S1) and a second throttle portion (S2), and the foregoing step of forming a packing step is performed according to the aforementioned dilution gas Alternatively, the throttle unit of the mixed gas is switched from the throttle portion to the second throttle portion by the throttle type. The method for measuring an organic metal vapor phase of the member 8 further comprises the step of measuring a flow rate of the diluent gas, wherein the flow rate of the diluent gas converges to a constant value in the measuring step, and then performing the film forming step. 11. The method of organometallic vapor phase deposition according to claim 8, wherein the compound semiconductor film is formed in the film forming step. 12. The method of organometallic vapor phase deposition according to claim 9, wherein the compound semiconductor is composed of AlxGaylni.x. wogd, 仏+(8)). 13. A gas flow regulator (9) comprising: an element (F) 'which adjusts a flow rate of a gas passing through a gas pressure on the upstream side and a gas pressure (PB2) on the downstream side; Ten (P3) for measuring the pressure on the downstream side of the aforementioned element; a second pressure gauge (Ρ2) for measuring the pressure on the upstream side of the aforementioned element; 121662.doc 200830372 Thermometer (τι), For measuring the temperature of the aforementioned element; and a pressure adjusting portion (V2) for adjusting the aforementioned gas pressure on the upstream side of the element. A semiconductor manufacturing apparatus comprising: a substrate processing chamber (31) for processing a substrate; and a plurality of tubes (33a to 33e) connected to the substrate processing chamber and used for processing the substrate a gas supply regulator in the chamber; and a gas flow regulator (9) according to item 13, which is disposed on at least one of the plurality of pipelines; Lu Gang said that the plurality of pipelines are on the upstream side of the gas flow regulator Pick up. The semiconductor manufacturing apparatus of claim 14 is a device for forming a semiconductor film on the substrate by vapor deposition.半导体 16. The semiconductor manufacturing apparatus of claim 15 which is a device for forming a nitride human semiconductor on the substrate by vapor deposition. 17. The semiconductor manufacturing apparatus of claim 15, wherein the gas phase is a vapor phase deposition method. The semiconductor manufacturing apparatus of claim 15, wherein the vapor deposition is an organic metal vapor deposition method. , ', the body manufacturing method, using the manufacturing method of the semi-conducting of claim 14, the clothing and having the adjustment ratio of the first 20. The semi-conductive film of the desired item is formed by vapor deposition of the element upstream. The step of pressure on the side. The conductor body manufacturing method further comprises the step of semi-forming on the substrate. 121662.doc 200830372 21. The semiconductor fabrication of claim 20, which further comprises the step of suspending the nitride bismuth compound semiconductor film by gas phase. The step of forming the substrate is as follows: 22. The semiconductor manufacturing apparatus of claim 20, wherein the compound vapor deposition method. Reference is made to a vapor-deposited hydrogen. The semiconductor manufacturing apparatus of claim 20, wherein the organic metal vapor deposition method. <Priests" 121662.doc