JP2008218760A - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To control the number of moles in a raw material gas supplied to a reaction chamber, thereby preventing the deterioration of yields caused by morphologic abnormalities. <P>SOLUTION: In the manufacturing of the semiconductor device for forming a thin film using the MOCVD method, the semiconductor device has a plurality of raw material vessels for supplying raw material compounds, and by arbitrarily selecting the raw material vessel used for supplying the raw material compound together with a carrier gas, the raw material vessel used for supply is added when the concentration of the raw material gas cannot be kept constant at a carrier gas flow rate, and when the raw material compound in the raw material vessel runs short, the other raw material vessel is used to supply the raw material compound, thus replenishing the raw material compound while continuing the supply so that the number of moles in the raw gas supplied to the reaction chamber can be stably controlled, thus controlling the deterioration of yields caused by morphologic abnormalities. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention uses a material gas supply technique in a metal organic chemical vapor deposition (hereinafter, referred to as MOCVD) apparatus, and a chemical vapor deposition method using an organic metal as a raw material. The present invention relates to a semiconductor device manufacturing method for depositing a thin film and a semiconductor device manufacturing apparatus.

  In recent years, MOCVD (Metal Organic Chemical Vapor Deposition) is used as a method for forming a compound semiconductor thin film such as an InGaAsP thin film. This CVD method is a method in which an organic metal source gas is sprayed onto a substrate and chemically reacted on the substrate to form a thin film. The apparatus configuration is such that the starting material liquid and solid organometallic compound are enclosed in a stainless steel container or the like. A method is used in which a raw material gas is generated by vaporizing or sublimating the raw material while keeping this at a constant temperature by a thermostat or the like, and this raw material gas is supplied to the reaction chamber with a carrier gas composed of an inert gas or the like. In this case, the flow rate of the carrier gas is controlled by the mass flow controller.

  However, many liquid and solid starting materials that are organic metals have a problem in the stability of their vapor pressures, and it is difficult to feed a stable raw material gas into the reaction chamber with good reproducibility. In addition, since the amount of the raw material sealed in the container cannot be observed, the inside of the container cannot be observed. Therefore, after producing a thin film or the like, composition analysis and film thickness measurement must be performed. Furthermore, liquid and solid raw materials are often subjected to bubbling or the like. In this case, there is a problem that the concentration of the raw material gas changes as the remaining amount decreases.

  Therefore, an in-line concentration measuring device is installed in the gas line between the raw material container and the reaction chamber, the raw material gas concentration is detected, and the number of moles of the raw material transferred to the reaction chamber is fixed by feeding back to the carrier gas flow rate of the mass flow controller. In some cases, a control method is used (see, for example, Patent Document 1).

Conventionally, there is a vapor phase growth method of supplying a raw material made of an organic compound in a gaseous state as a vapor phase growth method of a III-V compound semiconductor. Group III raw materials, for example, trimethylgallium (TMG) and triethylgallium (TEG) for Ga, trimethylaluminum (TMA) for Al, and trimethylindium (TMI) for In are used. PH ₃ and AsH ₃ are used for Group V raw materials. Such a growth method is called a metal organic chemical vapor deposition method (MOCVD method).

  TMG and TMA used here are liquids, and TMI is a solid raw material. In the MOCVD method apparatus, the organometallic raw material that is a raw material is controlled to an appropriate temperature, and when a carrier gas is blown into the raw material, the raw material is vaporized or sublimated to become a raw material gas, which is transported to the reaction chamber by the carrier gas. It will be. These gases are precisely controlled by controlling the flow rate of the carrier gas, but the concentration of the source gas contained in the carrier gas is largely governed by the state of the source gas.

  In order to control the raw material gas concentration to be constant, it is necessary to control the raw material at a constant pressure and temperature so that each raw material has a saturated vapor pressure condition, and to make the contact area with the carrier gas constant. It is essential. When the raw material decreases, the solid material surface area decreases particularly in the case of a solid raw material, so that the amount of raw material gas fluctuates.

A conventional technique for solving this will be described with reference to FIGS.
FIG. 8 is a diagram illustrating a conventional semiconductor device manufacturing apparatus, and FIG. 9 is a diagram illustrating a relationship between a conventional carrier gas flow rate, source gas concentration, and the number of moles of source gas in the semiconductor device manufacturing apparatus.

As shown in FIG. 8, in the conventional semiconductor device manufacturing apparatus using the MOCVD method, an in-line concentration measuring device 4 is installed in the connecting tube 3 between the raw material container 1 and the reaction chamber 2 to detect the raw material gas concentration. In some cases, a method is used in which the number of moles of the raw material gas conveyed to the reaction chamber 2 is controlled to be constant by feeding back to the mass flow controller 5 through the control unit 6 and adjusting the flow rate of the carrier gas.
JP-A-8-271418

  However, as shown in FIG. 9, as the source gas decreases, the number of moles of source gas carried to the reaction chamber cannot be adjusted with the flow rate of the carrier gas. Even when the raw material remains sufficiently, if the concentration fluctuation is significant, the control range of the mass flow controller will be exceeded, and it will not be possible to adjust with the flow rate of the carrier gas. There is a problem that the growth cannot be performed, the surface morphology abnormality occurs, and the yield decreases.

  In order to solve the above problems, the semiconductor device manufacturing apparatus and the semiconductor device manufacturing method of the present invention control the number of moles of the source gas supplied to the reaction chamber to suppress a decrease in yield due to an abnormal morphology. With the goal.

  In order to achieve the above object, a semiconductor device manufacturing apparatus according to the present invention is a semiconductor device manufacturing apparatus for forming a semiconductor thin film by metal organic chemical vapor deposition, wherein the semiconductor substrate on which the semiconductor thin film is formed includes: A reaction chamber to be installed; a gas line for supplying a source gas to the reaction chamber; a mass flow controller for flowing a carrier gas into the gas line; and a plurality of source containers connected to the gas line for supplying the source gas A valve provided at a connection portion of each raw material container with the gas line, a concentration measuring device for measuring the concentration of the raw material gas supplied to the reaction chamber, and the concentration measured by the concentration measuring device And a control unit for controlling the flow rate of the carrier gas from the mass flow controller and the opening and closing of the valves, When the degree is kept constant, the flow rate of the carrier gas is controlled by the control unit, and the valve is opened and closed as necessary to control the number of the raw material containers used to supply the raw material gas. Furthermore, when replenishing the raw materials in some of the raw material containers, the opening and closing of the valve is controlled so as to supply the raw material gas using the other raw material containers.

  Also, a semiconductor device manufacturing apparatus for forming a semiconductor thin film by metal organic chemical vapor deposition, a reaction chamber in which a semiconductor substrate on which the semiconductor thin film is formed is installed, and a source gas is supplied to the reaction chamber A gas line; a mass flow controller for flowing a carrier gas into the gas line; a first source container connected to the gas line for supplying the source gas; and a source gas connected to the gas line for supplying the source gas. A first valve provided at a connection between the second raw material container and the gas line of the first raw material container; and a second provided at a connection between the gas line of the second raw material container. A valve, a concentration measuring device for measuring the concentration of the source gas supplied to the reaction chamber, and the mass flow controller according to the concentration measured by the concentration measuring device. A control unit that controls the flow rate of the carrier gas and controls the opening and closing of the first valve and the second valve, and when the concentration of the source gas is kept constant, the control unit , Controlling the flow rate of the carrier gas, and controlling the opening and closing of the first valve and the second valve as necessary to use the raw material container for supplying the raw material gas as the first raw material container or Either or both of the second raw material containers, and when refilling the raw material of any of the raw material containers, the valve is closed so that the raw material gas is supplied using the other raw material container. It is characterized by controlling.

The first raw material container and the second raw material container are connected to each other in parallel.
The first raw material container and the second raw material container are connected to each other in series.

The raw material is an organic compound.
Further, the gas line further includes a vent line for exhausting the carrier gas.

  Furthermore, the method for manufacturing a semiconductor device according to the present invention is based on a metal organic chemical vapor deposition method by supplying a source gas supplied from a first source container and a second source container to a semiconductor substrate via a carrier gas. A method of manufacturing a semiconductor device for forming a semiconductor thin film, the step of controlling the carrier gas flow rate so that the concentration of the source gas supplied only from the first source container is kept constant, and the source gas And a step of controlling to supply the source gas also from the second source container when the concentration of the source gas is lower than a predetermined first threshold concentration.

  Further, a semiconductor device is manufactured by forming a semiconductor thin film by metal organic chemical vapor deposition by supplying a source gas supplied from a first source container and a second source container to a semiconductor substrate via a carrier gas. A method of controlling the concentration of the source gas supplied from only the first source container according to the carrier gas flow rate to be constant, and a first threshold value in which the concentration of the source gas is predetermined. When the concentration is lower than the concentration, the step of controlling the source gas to be supplied also from the second source container, and the source gas is supplied from the first source container and the second source container. When the concentration of the raw material gas falls below a predetermined second threshold concentration in the state, the raw material gas from the first raw material container is stopped and the raw material gas is supplied to the first raw material container. In a state where the source gas is supplied from only the second source container and the concentration of the source gas falls below a predetermined third threshold concentration. A step of controlling the source gas to be supplied also from one source container, and after the source gas is supplied only from the second source container, the source gas is supplied to the first source container and the second source container. When the concentration of the source gas is lower than a predetermined fourth threshold concentration while being supplied from the source material container, the supply of the source gas from the second source container is stopped and the second source gas is supplied. And a step of controlling to replenish the raw material in the raw material container.

The raw material is an organic compound.
In addition, the method includes a step of passing the carrier gas through the first raw material container and exhausting the carrier gas to a vent line before introducing the carrier gas.

  As described above, it is possible to stably control the number of moles of the raw material gas supplied to the reaction chamber, and to suppress a decrease in yield due to an abnormal morphology.

  In the manufacture of a semiconductor device for forming a thin film using the MOCVD method, a plurality of raw material containers for supplying a raw material compound are provided, and the raw material container used for supplying the raw material compound together with the carrier gas is appropriately selected. If the amount of raw material compounds in the raw material container is low, supply raw material compounds from other raw material containers and replenish the raw material compounds while continuing the supply. Thus, it is possible to stably control the number of moles of the raw material gas supplied to the reaction chamber, and to suppress a decrease in yield due to abnormal morphology.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described in detail with reference to FIGS.
FIG. 1 is a diagram illustrating a configuration in which a semiconductor device manufacturing apparatus according to the first embodiment adjusts a source gas concentration using only a source container A, and FIG. 2 illustrates a semiconductor device manufacturing apparatus according to the first embodiment. The figure which shows the structure which adjusts raw material gas concentration using the raw material container A and the raw material container B, FIG. 3 adjusts raw material gas concentration using only the raw material container B by the manufacturing apparatus of the semiconductor device in 1st Embodiment. FIG. 7 is a diagram illustrating a configuration, and FIG. 7 is a diagram illustrating a change in a source gas concentration depending on a hydrogen gas flow rate adjusted by the semiconductor device manufacturing apparatus according to the first embodiment.

  1-3, a mass flow controller 5 for adjusting the flow rate of hydrogen gas as a carrier gas and a reaction chamber 2 for forming a thin film on a substrate are connected by a gas line 7, and a raw material container A and a raw material container B having TMI Is connected in parallel to the gas line 7 and the raw material containers are also connected in parallel, and a concentration measuring device 4 for measuring the concentration of the raw material gas contained in the carrier gas is connected between the raw material container and the reaction chamber 2. . Furthermore, based on the raw material gas concentration in the process measured by the concentration measuring device 4, a control unit 8 is provided for controlling the flow rate of the hydrogen gas of the mass flow controller 5 and the opening and closing of the valves of the raw material container A and the raw material container B. Yes. This control for opening and closing the valve is a feature of the present invention. Details are given together with the description of the manufacturing method.

Hereinafter, a semiconductor device manufacturing method using the semiconductor device manufacturing apparatus of the present invention will be described.
First, a substrate to be processed is installed in the reaction chamber 2, and the raw material container A and the raw material container B are filled with TMI.

  Next, hydrogen gas as a carrier gas is introduced from the gas line 7. At this time, as shown in FIG. 1, the valves A1 and A3 of the raw material container A are opened so that the TMI of the raw material container A is supplied, the valve A2 is closed, and the TMI of the raw material container B is not supplied. Close B1 and B3 and open B2. At this time, the control unit 8 controls the mass flow controller 5 based on the raw material gas concentration measured by the concentration measuring device 4 and adjusts the flow rate of hydrogen gas, so that the amount of TMI carried into the reaction chamber 2 is reduced. Keep constant. In this case, the amount of TMI carried to the reaction chamber 2 can be kept constant by increasing the flow rate of the hydrogen gas as the raw material gas concentration decreases. Theoretically, when the raw material gas concentration is halved, the number of moles of TMI conveyed to the reaction chamber 2 can be kept constant by doubling the flow rate.

  Next, when the concentration of the raw material gas from the raw material container A decreases and reaches a certain threshold value C1, it is judged that the number of moles of TMI conveyed to the reaction chamber 2 cannot be kept constant only by the supply of TMI from the raw material container A. As shown in FIG. 2, the supply of the TMI of the raw material container B in addition to the raw material container A is started by opening the valves B1 and B3 of the raw material container B and closing the valve B2 by the operation of the control unit 8. To do. As a result, the supply of TMI to the raw material container B is started, and the raw material gas concentration measured by the concentration measuring device is stabilized again. Therefore, the mass flow controller 5 is controlled so that the flow rate of hydrogen gas is also stabilized. At this time, TMI is supplied from both the raw material container A and the raw material container B.

  The operation at this time will be described with reference to FIG. 7. When the concentration of the source gas is adjusted using only the source container A by the flow rate of the hydrogen gas, the source gas concentration is kept constant only by the hydrogen gas flow rate. When the raw material gas concentration falls to a certain threshold C1, the TMI is supplied from the raw material container B in addition to the raw material container A, and the TMI is supplied from both the raw material container A and the raw material container B. The raw material gas concentration is increased, and the number of moles of TMI conveyed to the reaction chamber 2 is controlled to be constant.

  Next, when the raw material gas concentration decreases due to a further decrease in the TMI of the raw material container A and reaches a certain threshold value C2, it is determined that the TMI of the raw material container A has almost disappeared, and as shown in FIG. By the operation, the valves A1 and A3 of the raw material container A are closed, and A2 is opened to stop the supply of the TMI of the raw material container A. Thereby, the supply of the source gas is only from the source container B. At this time, since sufficient TMI still remains in the raw material container B, supply from only the raw material container B is possible. And while supplying source gas only with source container B, TMI is newly replenished to source container A in which TMI almost disappeared. In this way, TMI can be newly replenished to the raw material container A without stopping the supply of the raw material gas, and the process time can be saved.

  The operation at this time will be described with reference to FIG. 7. When the concentration of the source gas is adjusted using the source vessel A and the source vessel B by the flow rate of the hydrogen gas, the TMI of the source vessel A is almost eliminated. When the raw material gas concentration cannot be kept constant and the raw material gas concentration falls to a certain threshold value C2, the TMI supply from the raw material container A is stopped, and the TMI supply is performed only from the raw material container B. In the meantime, the TMI can be newly replenished to the raw material container A in which the TMI almost disappears without stopping the supply of the raw material gas.

  Next, when the concentration of the raw material gas from the raw material container B decreases and reaches a certain threshold value C3, the valves A1 and A3 of the raw material container A are opened and the valve A2 is closed by the action of the control unit as shown in FIG. Thus, in addition to the raw material container B, the supply of the TMI of the raw material container A is started again. At this time, the raw material container A is newly replenished with TMI while the supply of TMI from the raw material container A is stopped. Incidentally, in the present embodiment, C3 = C1, but it is not necessary to be the same. Thereby, the supply of TMI to the raw material container A starts, and the raw material gas concentration measured by the concentration measuring device 4 is stabilized again, so that the mass flow controller 5 is controlled so that the flow rate of hydrogen gas is also stabilized. At this time, TMI is supplied from both the raw material container A and the raw material container B.

  The operation at this time will be described with reference to FIG. 7. When the concentration of the source gas is adjusted using only the source container B by the flow rate of the hydrogen gas, the source gas concentration is kept constant only by the hydrogen gas flow rate. If the raw material gas concentration falls to a certain threshold C3, the TMI is supplied from the raw material container A in addition to the raw material container B, and the TMI is supplied from both the raw material container A and the raw material container B. The raw material gas concentration is increased, and the number of moles of TMI conveyed to the reaction chamber 2 is controlled to be constant.

  Next, when the raw material gas concentration decreases due to a further decrease in the TMI of the raw material container B and reaches the threshold value C4, it is determined that the TMI of the raw material container B has almost disappeared, and as shown in FIG. By closing the valves B1 and B3 of the raw material container B and opening B2, the supply of the TMI of the raw material container B is stopped. Incidentally, in the present embodiment, C4 = C2, but it is not necessary to be the same. Thereby, the supply of the source gas is only from the source container A. At this time, since sufficient TMI still remains in the raw material container A, supply from only the raw material container A is possible. And while supplying source gas only with source container A, TMI is newly replenished to source container B from which TMI almost disappeared. In this way, TMI can be newly replenished to the raw material container B without stopping the supply of the raw material gas, and the process time can be saved.

  The operation at this time will be described with reference to FIG. 7. When the concentration of the source gas is adjusted using the source vessel A and the source vessel B by the flow rate of the hydrogen gas, the TMI of the source vessel B is almost eliminated. When the raw material gas concentration cannot be kept constant and the raw material gas concentration falls to a certain threshold value C4, the TMI supply from the raw material container B is stopped, and the TMI is supplied only from the raw material container A. In the meantime, the TMI can be newly replenished to the raw material container B where the TMI has almost disappeared without stopping the supply of the raw material gas.

By repeating the above steps, TMI can be supplied from both the raw material container A and the raw material container B as needed without stopping the supply of the raw material gas. Further, when the TMI of any raw material container needs to be replenished, the TMI can be newly replenished to the raw material container that needs to be replenished while continuing to supply TMI only from the remaining raw material containers. It is possible to perform the process continuously and stably. Therefore, it is possible to control the number of moles of the raw material gas supplied to the reaction chamber, and to suppress a decrease in yield due to an abnormal morphology.
(Second Embodiment)
Hereinafter, the second embodiment of the present invention will be described in detail with reference to FIGS.

  FIG. 4 is a diagram illustrating a configuration in which the semiconductor device manufacturing apparatus according to the second embodiment adjusts the source gas concentration using only the source container A, and FIG. 5 illustrates the semiconductor device manufacturing apparatus according to the second embodiment. FIG. 6 is a diagram showing a configuration for adjusting the raw material gas concentration using the raw material container A and the raw material container B. FIG. 6 shows the semiconductor device manufacturing apparatus in the second embodiment adjusting the raw material gas concentration using only the raw material container B. It is a figure which shows a structure. 4 to 6, the difference from the first embodiment is that the raw material container A and the raw material container B having TMI are connected in parallel to the gas line, and the raw material containers are connected in series. is there.

Hereinafter, a semiconductor device manufacturing method using the semiconductor device manufacturing apparatus of the present invention will be described.
First, a substrate to be processed is installed in the reaction chamber 2, and the raw material container A and the raw material container B are filled with TMI.

  Next, hydrogen gas as a carrier gas is introduced from the gas line 7. At this time, as shown in FIG. 4, the valves A1 and A3 of the raw material container A are opened and the valve A2 is closed so that the TMI of the raw material container A is supplied. Then, valves B1 and B3 are closed and B2 is opened so that TMI in the raw material container B is not supplied. Then, based on the raw material gas concentration measured by the concentration measuring device 4, the mass flow controller 5 is controlled by the control unit 8 and the flow rate of hydrogen gas is adjusted so that the amount of TMI carried into the reaction chamber 2 is constant. keep. In this case, the amount of TMI carried to the reaction chamber 2 can be kept constant by increasing the flow rate of the hydrogen gas as the raw material gas concentration decreases. Theoretically, if the source gas concentration is halved, the amount of TMI carried to the reaction chamber 2 can be kept constant by doubling the flow rate.

  Next, when the concentration of the raw material gas from the raw material container A decreases and reaches a certain threshold value C1, it is judged that the number of moles of TMI conveyed to the reaction chamber 2 cannot be kept constant only by the supply of TMI from the raw material container A. Then, as shown in FIG. 5, by the operation of the control unit 8, the valves B1 and B3 of the raw material container B are opened and the valve B2 is closed, so that the supply of the TMI of the raw material container B is started in addition to the raw material container A. To do. Thereby, the supply of the TMI to the raw material container B starts, and the raw material gas concentration measured by the concentration measuring device 4 is stabilized again, so that the mass flow controller 5 is controlled so that the flow rate of hydrogen gas is also stabilized. At this time, TMI is supplied from both the raw material container A and the raw material container B.

  Next, when the raw material gas concentration decreases due to a further decrease in the TMI of the raw material container A and reaches a certain threshold value C2, it is determined that the TMI of the raw material container A has almost disappeared, and as shown in FIG. By the operation, the valves A1 and A3 of the raw material container A are closed and A2 is opened, thereby stopping the supply of TMI of the raw material container A. Thereby, the supply of the source gas is only from the source container B. At this time, since sufficient TMI still remains in the raw material container B, supply from only the raw material container B is possible. And while supplying source gas only with source container B, TMI is newly replenished to source container A in which TMI almost disappeared. In this way, TMI can be newly replenished to the raw material container A without stopping the supply of the raw material gas, and the process time can be saved.

  Next, when the concentration of the raw material gas from the raw material container B decreases and reaches a certain threshold value C3, as shown in FIG. 5, the valves A1 and A3 of the raw material container A are opened and the valve A2 is closed by the action of the control unit. Thus, in addition to the raw material container B, the supply of the TMI of the raw material container A is started again. Thereby, the supply of TMI to the raw material container A starts, and the raw material gas concentration measured by the concentration measuring device 4 is stabilized again, so that the mass flow controller 5 is controlled so that the flow rate of hydrogen gas is also stabilized. At this time, while the supply of TMI from the raw material container A is stopped, the raw material container A is newly replenished with TMI. At this time, TMI is supplied from both the raw material container A and the raw material container B.

  Next, when the raw material gas concentration decreases due to a further decrease in the TMI of the raw material container B and reaches a certain threshold value C4, it is determined that the TMI of the raw material container B has almost disappeared, and as shown in FIG. By the operation, the valves B1 and B3 of the raw material container B are closed, and B2 is opened, thereby stopping the supply of the TMI of the raw material container B. Thereby, the supply of the source gas is only from the source container A. At this time, since sufficient TMI still remains in the raw material container A, supply from only the raw material container A is possible. And while supplying source gas only with source container A, TMI is newly replenished to source container B from which TMI almost disappeared. In this way, TMI can be newly replenished to the raw material container B without stopping the supply of the raw material gas, and the process time can be saved.

  By repeating the above steps, TMI can be supplied from both the raw material container A and the raw material container B as needed without stopping the supply of the raw material gas. Further, when the TMI of any raw material container needs to be replenished, the TMI can be newly replenished to the raw material container that needs to be replenished while continuing to supply TMI only from the remaining raw material containers. And the process can be performed continuously. Therefore, it is possible to stably control the number of moles of the raw material gas supplied to the reaction chamber, and to suppress a decrease in yield due to abnormal morphology.

  In the first embodiment and the second embodiment, it is preferable to provide a step of stabilizing the source gas concentration before the start of the process. In the process of stabilizing the raw material gas concentration, the carrier gas and the raw material gas are not introduced into the reaction chamber but are discharged to the outside from the vent line.

In addition to hydrogen, the carrier gas may be an inert gas such as helium, argon, or neon.
Furthermore, although the case where TMI is used has been described in the above two embodiments, organic compounds such as TMG and TMA can be used.

  In the above description, the example in which the supply is controlled by two raw material containers has been described. However, the number of raw material containers is not limited to two, and three or more raw material containers may be used. In this case, if the source gas concentration cannot be kept constant at the carrier gas flow rate due to insufficient supply of the raw material container as the raw material supply source, a raw material container used for supply is added, and the raw material in one of the raw material containers is reduced. In such a case, the threshold value of the raw material gas concentration, the priority order of the raw material containers, and the like are determined so that the raw material containers are replenished while continuing to supply the raw materials from other raw material containers.

  The present invention stably controls the number of moles of the source gas supplied to the reaction chamber and suppresses a decrease in yield due to an abnormality in morphology, so that the organic metal can be added using the source gas supply technique in the MOCVD apparatus. The present invention is useful for a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus for depositing a thin film such as a compound semiconductor by a chemical vapor deposition method as a raw material.

The figure which shows the structure which the manufacturing apparatus of the semiconductor device in 1st Embodiment adjusts raw material gas concentration using only the raw material container A The figure which shows the structure which the manufacturing apparatus of the semiconductor device in 1st Embodiment adjusts raw material gas concentration using the raw material container A and the raw material container B The figure which shows the structure which the manufacturing apparatus of the semiconductor device in 1st Embodiment adjusts raw material gas concentration using only the raw material container B The figure which shows the structure which the manufacturing apparatus of the semiconductor device in 2nd Embodiment adjusts source gas concentration using only the source container A The figure which shows the structure which the manufacturing apparatus of the semiconductor device in 2nd Embodiment adjusts raw material gas concentration using the raw material container A and the raw material container B The figure which shows the structure which the manufacturing apparatus of the semiconductor device in 2nd Embodiment adjusts source gas concentration using only the source container B The figure which shows the mode of the change of source gas concentration by the hydrogen gas flow volume adjusted with the manufacturing apparatus of the semiconductor device in 1st Embodiment Diagram showing a conventional semiconductor device manufacturing apparatus The figure which shows the relationship between the conventional carrier gas flow volume in a semiconductor device manufacturing apparatus, the density | concentration of source gas, and the number of moles of source gas

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Raw material container 2 Reaction chamber 3 Connection pipe 4 Concentration measuring device 5 Mass flow controller 6 Control part 7 Gas line 8 Control part A Raw material container A1 valve A2 valve A3 valve B Raw material container B1 valve B2 valve B3 valve

Claims (10)

A semiconductor device manufacturing apparatus for forming a semiconductor thin film by metal organic chemical vapor deposition,
A reaction chamber in which a semiconductor substrate on which the semiconductor thin film is formed is installed;
A gas line for supplying a raw material gas to the reaction chamber;
A mass flow controller for flowing a carrier gas into the gas line;
A plurality of raw material containers connected to the gas line to supply the raw material gas;
A valve provided at a connection portion between each raw material container and the gas line;
A concentration measuring device for measuring the concentration of the source gas supplied to the reaction chamber;
A controller for controlling the flow rate of the carrier gas from the mass flow controller and the opening and closing of the valves according to the concentration measured by the concentration measuring device, and maintaining the concentration of the source gas constant Further, the flow rate of the carrier gas is controlled by the control of the control unit, and the number of the raw material containers used for supplying the raw material gas is controlled by opening and closing the valve as necessary. An apparatus for manufacturing a semiconductor device, wherein when the raw material in the raw material container is replenished, closing and opening of the valve is controlled so as to supply the raw material gas using another raw material container. A semiconductor device manufacturing apparatus for forming a semiconductor thin film by metal organic chemical vapor deposition,
A reaction chamber in which a semiconductor substrate on which the semiconductor thin film is formed is installed;
A gas line for supplying a raw material gas to the reaction chamber;
A mass flow controller for flowing a carrier gas into the gas line;
A first raw material container connected to the gas line and supplying the raw material gas;
A second raw material container connected to the gas line and supplying the raw material gas;
A first valve provided at a connection portion of the first raw material container with the gas line;
A second valve provided at a connection portion between the second raw material container and the gas line;
A concentration measuring device for measuring the concentration of the source gas supplied to the reaction chamber;
A control unit for controlling the flow rate of the carrier gas from the mass flow controller according to the concentration measured by the concentration measuring device and controlling the opening and closing of the first valve and the second valve; When the concentration of the source gas is kept constant, the control unit controls the flow rate of the carrier gas, and performs control to close and open the first valve and the second valve as necessary. A raw material container used for supplying a raw material gas is one or both of the first raw material container and the second raw material container, and when the raw material in one of the raw material containers is replenished, the other raw material container An apparatus for manufacturing a semiconductor device, wherein the opening and closing of the valve is controlled so as to supply the source gas by using a gas.   3. The apparatus for manufacturing a semiconductor device according to claim 2, wherein the first raw material container and the second raw material container are connected so as to be parallel to each other.   3. The apparatus for manufacturing a semiconductor device according to claim 2, wherein the first raw material container and the second raw material container are connected to each other in series.   5. The semiconductor device manufacturing apparatus according to claim 1, wherein the raw material is an organic compound.   6. The semiconductor device manufacturing apparatus according to claim 1, wherein the gas line further includes a vent line for exhausting the carrier gas. A semiconductor device manufacturing method for forming a semiconductor thin film by metal organic chemical vapor deposition by supplying a source gas supplied from a first source container and a second source container to a semiconductor substrate via a carrier gas. There,
Controlling the carrier gas flow rate so that the concentration of the source gas supplied from only the first source container is kept constant;
And a step of controlling the source gas to be supplied also from the second source container when the source gas concentration falls below a predetermined first threshold concentration. Production method. A semiconductor device manufacturing method for forming a semiconductor thin film by metal organic chemical vapor deposition by supplying a source gas supplied from a first source container and a second source container to a semiconductor substrate via a carrier gas. There,
Controlling the carrier gas flow rate so that the concentration of the source gas supplied from only the first source container is kept constant;
A step of controlling the source gas to be supplied also from the second source container when the concentration of the source gas is lower than a predetermined first threshold concentration;
When the source gas is supplied from the first source container and the second source container and the concentration of the source gas falls below a predetermined second threshold concentration, the first source container Controlling to stop the source gas from and replenish the first source container with source material;
In a state where the source gas is supplied only from the second source container, when the concentration of the source gas falls below a predetermined third threshold concentration, the source gas is also supplied from the first source container. A process of controlling to supply,
After the source gas is supplied only from the second source container, the concentration of the source gas is predetermined in a state where the source gas is supplied from the first source container and the second source container. And a step of controlling the supply of the raw material gas from the second raw material container to replenish the second raw material container when it is lower than the fourth threshold concentration. A method for manufacturing a semiconductor device.   The method for manufacturing a semiconductor device according to claim 7, wherein the raw material is an organic compound.   10. The method according to claim 7, further comprising a step of passing the carrier gas through the first raw material container and exhausting the carrier gas to a vent line before introducing the carrier gas. The manufacturing method of the semiconductor device of description.

Images