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TW200839865A - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device Download PDF

Info

Publication number
TW200839865A
TW200839865A TW096145138A TW96145138A TW200839865A TW 200839865 A TW200839865 A TW 200839865A TW 096145138 A TW096145138 A TW 096145138A TW 96145138 A TW96145138 A TW 96145138A TW 200839865 A TW200839865 A TW 200839865A
Authority
TW
Taiwan
Prior art keywords
layer
substrate
etching
forming
acid solution
Prior art date
Application number
TW096145138A
Other languages
English (en)
Chinese (zh)
Inventor
Juri Kato
Shunichiro Ohmi
Original Assignee
Seiko Epson Corp
Tokyo Inst Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Tokyo Inst Tech filed Critical Seiko Epson Corp
Publication of TW200839865A publication Critical patent/TW200839865A/zh

Links

Classifications

    • H10P90/1906—
    • H10P50/642—
    • H10W10/061—
    • H10W10/181—

Landscapes

  • Weting (AREA)
  • Element Separation (AREA)
TW096145138A 2006-11-30 2007-11-28 Method for manufacturing a semiconductor device TW200839865A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006324334 2006-11-30
JP2007290698A JP2008160073A (ja) 2006-11-30 2007-11-08 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200839865A true TW200839865A (en) 2008-10-01

Family

ID=39487430

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096145138A TW200839865A (en) 2006-11-30 2007-11-28 Method for manufacturing a semiconductor device

Country Status (4)

Country Link
JP (1) JP2008160073A (ja)
KR (1) KR20080049635A (ja)
CN (1) CN101192530B (ja)
TW (1) TW200839865A (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6215723B2 (ja) * 2014-01-30 2017-10-18 京セラ株式会社 エッチング方法
US11518937B2 (en) 2019-12-25 2022-12-06 Tokyo Ohka Kogyo Co., Ltd. Etching solution and method for manufacturing semiconductor element
JP7584275B2 (ja) 2019-12-25 2024-11-15 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法
JP7377115B2 (ja) * 2020-01-31 2023-11-09 三菱製紙株式会社 熱可塑性ポリイミド樹脂とポリイミド樹脂の積層体のエッチング方法
JP2024124744A (ja) * 2023-03-03 2024-09-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10308381A (ja) * 1997-05-08 1998-11-17 Mitsubishi Electric Corp 半導体装置の製造方法
US5909482A (en) * 1997-09-08 1999-06-01 Ultratec, Inc. Relay for personal interpreter
JP2000068241A (ja) * 1998-08-21 2000-03-03 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2006253182A (ja) * 2005-03-08 2006-09-21 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP4293193B2 (ja) * 2005-03-09 2009-07-08 セイコーエプソン株式会社 半導体装置および半導体装置の製造方法
JP2006278827A (ja) * 2005-03-30 2006-10-12 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4696640B2 (ja) * 2005-03-30 2011-06-08 セイコーエプソン株式会社 半導体装置の製造方法
JP2007227600A (ja) * 2006-02-23 2007-09-06 Seiko Epson Corp 半導体装置の製造方法、フォトマスク及び半導体装置

Also Published As

Publication number Publication date
JP2008160073A (ja) 2008-07-10
CN101192530A (zh) 2008-06-04
KR20080049635A (ko) 2008-06-04
CN101192530B (zh) 2011-03-30

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