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TW200835996A - Manufacturing method for manufacturing thin-film electronic device connection substrate, and electronic apparatus - Google Patents

Manufacturing method for manufacturing thin-film electronic device connection substrate, and electronic apparatus Download PDF

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Publication number
TW200835996A
TW200835996A TW096149442A TW96149442A TW200835996A TW 200835996 A TW200835996 A TW 200835996A TW 096149442 A TW096149442 A TW 096149442A TW 96149442 A TW96149442 A TW 96149442A TW 200835996 A TW200835996 A TW 200835996A
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TW
Taiwan
Prior art keywords
electronic device
thin film
substrate
film electronic
layer
Prior art date
Application number
TW096149442A
Other languages
Chinese (zh)
Inventor
Taimei Kodaira
Akira Tanaka
Manabu Tsuburaya
Original Assignee
Seiko Epson Corp
Zeon Corp
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Publication of TW200835996A publication Critical patent/TW200835996A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A manufacturing method for manufacturing a thin-film electronic device connection substrate, includes: forming a thin-film electronic device on a first substrate; making a surface of the thin-film electronic device surface-activate by forming a metal alkoxide layer on the surface of the thin-film electronic device; connecting the thin-film electronic device with a second substrate via the metal alkoxide layer; and separating the thin-film electronic device from the first substrate.

Description

200835996 九、發明說明 【發明所屬之技術領域】 本發明係關於在基板上接合薄膜電子裝置而形成之薄 膜電子裝置接合基板的製造方法，以及電子機器。 【先前技術】 薄膜電路裝置，係設置半導體元件等的薄膜電子裝置 於基板表面，藉由形成薄膜電路層而構成。作爲形成薄膜 電路層的基板，係可使用單結晶矽晶圓、石英玻璃基板、 耐熱玻璃基板等的無機基板、或樹脂薄膜等的有機基板。 另外’按照被作爲必要的薄膜電路裝置的性能或機能而選 擇適切的材質。其中尤其是，使用了樹脂薄膜的基板之薄 膜電路裝置，係因爲基板本身薄、具有可撓性，所以有： 可提供輕量、具備柔軟性的薄膜電路裝置之有利點。 作爲將樹脂薄膜使用於基板的薄膜電路裝置的製造方 法，係可知：將半導體層、絕緣體層、金屬層等依序層積 於樹脂薄膜上，形成薄膜電路層之方法。但是，樹脂薄膜 係因爲耐熱性之情事等，所以有：在程序上受到大的制約 之問題。 作爲迴避如此的問題之技術，在近年係可知：事先在 玻璃基板等的耐熱性基板的表面形成薄膜電子裝置，將前 述薄膜電子裝置從耐熱性基板剝離而接合（轉印）於樹脂薄 膜上，在此樹脂薄膜上形成薄膜電路層之技術。 如此的技術，係例如開示於：日本特開平1 〇 - 1 2 5 9 2 9 200835996 號公報、日本特開平10-125930號公報、以及日本特開平 1 0- 1 25 93 1 號公報。 然而，使用接著劑以及/或是黏著材料而將薄膜電子 裝置接合（轉印）在樹脂薄膜基板上，在形成薄膜電路層的 情況，若樹脂薄膜基板與薄膜電子裝置之間的接著力不充 分，則有產生：薄膜電子裝置或由此所構成的薄膜電路層 ，係從樹脂薄膜基板上剝落之現象。 一般而言，薄膜電子裝置或由此所構成的薄膜電路層 ’係將藉由化學氣相沈積法（CVD法）或濺鍍法而堆積於基 板表面的無機材料薄膜，多數地包含而構成。這些的無機 材料薄膜，係彈性常數係爲數十GPa而爲大，線膨脹係數 係爲數〜十數Ppm/K而爲小。一方面，樹脂薄膜基板或黏 著劑、接著劑等的有機材料，係一般而言該彈性常數係爲 數G P a而爲小、線膨脹係數係爲1 〇〜數百p p m / K左右而爲 大。 因而’在接合如此的異種材料相互間而形成之薄膜電 路裝置，係例如：若施加大的溫度變化，則起因於前述的 線膨脹係數之差，在以接著劑以及/或是黏著材料所構成 的有機層、與構成薄膜電子裝置（薄膜電路層）的無機層之 雙方，產生熱應力。因而，若兩者之間未被強固地接合（ 接著），則有如前述地產生：薄膜電子裝置（薄膜電路層）係 從藉由接著劑以及/或是黏著材料所構成的有機層剝落， 從樹脂薄膜基板上剝落的現象之問題。 200835996 【發明內容】 本發明係鑑於如此的課題而爲者，防止包含被接著於 基板上的薄膜電子裝置之薄膜電路層從基板剝落之情事； 以提供已確保信賴性的薄膜電子裝置接合基板的製造方法 ，而且提供電子機器作爲其目的。 爲了達成前述目的之本發明的薄膜電子裝置接合基板 的製造方法，以包含：在第1基板上製作薄膜電子裝置的 電子裝置製作工程、和在前述薄膜電子裝置表面形成金屬 烷氧化物層的表面活性化處理工程、和經由前述金屬烷氧 化物層，於前述薄膜電子裝置接著第2基板的基板接著工 程、和從前述第1基板剝離前述薄膜電子裝置的剝離工程 ，作爲其特徵。 如藉由此薄膜電子裝置接合基板的製造方法，則於薄 膜電子裝置上，例如：經由具有有機官能基之金屬烷氧化 物所構成的表面活性化處理層而配設第2基板，藉由此而 在第2基板接合薄膜電子裝置而進行轉印。因而，形成表 面活性化處理層的金屬烷氧化物之有機官能基，係主要是 強固地結合於樹脂製的第2基板側；爲加水分解基之[-OMe基（Me爲金屬）]’係主要是強固地結合於構成薄膜 電子裝置的無機材料膜。藉由此，例如，經由接著劑以及 /或是黏著材料，而且藉由經過前述表面活性化處理層， 可在第2基板上強固地接合薄膜電子裝置。因而，例如： 即使被施加大的溫度變化，亦可防止起因於線膨脹係數的 差而薄膜電子裝置從第2基板上剝落之情事；由此而可得 200835996 具有高信賴性的薄膜電子裝置接合基板。 另外，在前述製造方法，前述金屬烷氧化物，係 、Li、Si、Na、K、Mg、Ca、St、Ba、A1、In、Ge、BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film electronic device bonded substrate formed by bonding a thin film electronic device on a substrate, and an electronic device. [Prior Art] A thin film circuit device is provided by providing a thin film electronic device such as a semiconductor element on a surface of a substrate by forming a thin film circuit layer. As the substrate on which the thin film circuit layer is formed, an inorganic substrate such as a single crystal germanium wafer, a quartz glass substrate, or a heat resistant glass substrate, or an organic substrate such as a resin film can be used. In addition, an appropriate material is selected in accordance with the performance or function of the thin film circuit device to be necessary. In particular, the thin film circuit device of the substrate using the resin film is advantageous in that it can provide a lightweight and flexible thin film circuit device because the substrate itself is thin and flexible. As a method of producing a thin film circuit device using a resin film on a substrate, a method of forming a thin film circuit layer by sequentially laminating a semiconductor layer, an insulator layer, a metal layer or the like on a resin film is known. However, since the resin film is based on heat resistance, there is a problem that the procedure is greatly restricted. In recent years, it has been known that a thin film electronic device is formed on the surface of a heat-resistant substrate such as a glass substrate in advance, and the thin film electronic device is peeled off from the heat-resistant substrate to be bonded (transferred) to the resin film. A technique of forming a thin film circuit layer on this resin film. Such a technique is disclosed in, for example, Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei 10-125930, and Japanese Patent Laid-Open No. Hei No. Hei 10-125930. However, the thin film electronic device is bonded (transferred) to the resin film substrate by using an adhesive and/or an adhesive material, and in the case of forming the thin film circuit layer, if the adhesive force between the resin film substrate and the thin film electronic device is insufficient There is a case where a thin film electronic device or a thin film circuit layer formed thereby is peeled off from the resin film substrate. In general, a thin film electronic device or a thin film circuit layer formed thereby is composed of a plurality of inorganic material thin films deposited on the surface of a substrate by a chemical vapor deposition method (CVD method) or a sputtering method. These inorganic material films have a large elastic constant of several tens of GPa and a linear expansion coefficient of several to ten Ppm/K. On the other hand, the organic material such as the resin film substrate, the adhesive, and the adhesive is generally small in the elastic constant of several GP a and has a linear expansion coefficient of about 1 数百 to several hundreds of ppm / K. . Therefore, the thin film circuit device formed by joining such different materials to each other is, for example, a large temperature change, which is caused by an adhesive and/or an adhesive material due to the difference in linear expansion coefficient described above. The organic layer and the inorganic layer constituting the thin film electronic device (thin film circuit layer) generate thermal stress. Therefore, if the two are not strongly bonded (followed), it is generated as described above: the thin film electronic device (thin film circuit layer) is peeled off from the organic layer composed of the adhesive and/or the adhesive material. The problem of peeling off on the resin film substrate. SUMMARY OF THE INVENTION The present invention has been made in view of such a problem, and prevents a film circuit layer including a thin film electronic device mounted on a substrate from being peeled off from a substrate, and provides a thin film electronic device in which reliability is ensured. Manufacturing methods, and providing electronic machines for their purposes. In order to achieve the above object, a method of manufacturing a bonded electronic device bonded substrate of the present invention includes: an electronic device fabrication process for fabricating a thin film electronic device on a first substrate; and a surface of a metal alkoxide layer formed on a surface of the thin film electronic device. The activation treatment process and the peeling process of the thin film electronic device by the metal alkoxide layer, the substrate subsequent work of the thin film electronic device followed by the second substrate, and the peeling of the thin film electronic device from the first substrate are characterized. In the method of manufacturing a substrate by the thin film electronic device, the second substrate is disposed on the thin film electronic device by, for example, a surface activation layer formed of a metal alkoxide having an organic functional group. On the other hand, the thin film electronic device is bonded to the second substrate and transferred. Therefore, the organic functional group of the metal alkoxide forming the surface activation layer is mainly strongly bonded to the second substrate side made of resin; the [-OMe group (Me is metal)] system of the water-decomposing group It is mainly strongly bonded to the inorganic material film constituting the thin film electronic device. Thereby, the thin film electronic device can be strongly bonded to the second substrate by, for example, passing the above-described surface activation treatment layer via the adhesive and/or the adhesive material. Therefore, for example, even if a large temperature change is applied, it is possible to prevent the thin film electronic device from peeling off from the second substrate due to the difference in linear expansion coefficient; thus, it is possible to obtain a highly reliable thin film electronic device in 200835996. Substrate. Further, in the above production method, the metal alkoxide is Li, Si, Na, K, Mg, Ca, St, Ba, A1, In, Ge,

Fe、Cu、Y、Zr、以及Ta所構成的群之中所選擇至少 的金屬烷氧基化合物爲理想。 如此的金屬烷氧化物，係因爲泛用性及接著性係 好’所以成爲可得：不大幅地招致成本提昇、具有高 性的薄膜電子裝置接合基板。 另外，在前述製造方法，前述表面活性化處理工 係包含：將設置在前述薄膜電子裝置的第1基板的薄 子裝置配設面，進行淨化處理的淨化工程、和在前述 工程後的前述薄膜電子裝置配設面，配置前述金屬烷 物的連結處理工程、和在前述連結處理工程後的前述 電子裝置配設面，進行靜電除去處理的靜電除去工程 理想。 若如此地進行，則藉由在淨化工程，將薄膜電子 配設面進行淨化處理，則可在之後的連結處理工程， 屬烷氧化物更良好地安裝於薄膜電子裝置配設面。而 藉由在此薄膜電子裝置配設面進行靜電除去處理，則 使此薄膜電子裝置的電性的性能劣化而與第2基板更 地接合。 而且’在此製造方法，在前述淨化工程，係進行 漿處理工程、UV電漿處理工程、電暈處理工程、餓 理工程之中至少一種的淨化處理工程者爲理想。 由Ti Bi、 一種 都良 信賴 程， 膜電 淨化 氧化 薄膜 者爲 裝置 使金 且， 可不 良好 氧電 刻處 -8 - 200835996 如進行如此的淨化處理，則淨化薄膜電子裝置的表面 或已設置此之配設面而例如藉由：除去作爲異物之有機物 ’而在薄膜電子裝置配設面，金屬烷氧化物成爲更良好地 附著。 另外’在此製造方法，在前述連結處理工程，係將前 述金屬烷氧化物’以旋轉塗佈法、蒸氣處理法、浸漬式塗 佈法、網版印刷法、分注法、噴墨法、噴霧法之中至少一 種的手法配置者爲理想。 若如此地進行，則可在前述薄膜電子裝置配設面，使 金屬烷氧化物層良好地附著。 另外，在前述製造方法，在前述基板接著工程，係在 前述薄膜電子裝置上接合樹脂製的第2基板者爲理想。 若如此進行，則準備滿足關於可撓性或耐熱性等的被 要求的機能之基板，以藉由使用此，而可得到具有按照事 先已設計的機能之薄膜電子裝置接合基板。 另外，在前述製造方法，前述第2基板，係藉由在前 述薄膜電子裝置上塗佈樹脂液，使其硬化而形成者爲理想 〇 如藉由本發明，則例如：在想將第2基板作爲薄的樹 脂薄膜狀的情況，可塗佈樹脂液，使此樹脂硬化而形成第 2基板。因而，比起在使用比較難以操作的樹脂薄膜之情 況，成爲可使生產性提高。 另外，在前述製造方法，於前述第1基板上設置前述 薄膜電子裝置的電子裝置製作工程爲包含：於預製基板上 -9- 200835996 形成剝離層的步驟、和於前述剝離層上使複數的膜層積而 形成前述薄膜電子裝置的步驟爲理想。 若如此進行，則在從前述第1基板剝離前述薄膜電子 裝置時，藉由在前述剝離層使剝離產生，則薄膜電子裝置 係容易地剝離而確實地被轉印於前述第2基板上。 另外，在前述製造方法，前述電子裝置製作工程係包 含：於預製基板上形成剝離層的步驟、和於前述剝離層上 使複數的膜層積而形成前述薄膜電子裝置的步驟、和於前 述預製基板的薄膜電子裝置形成面，經由接著劑而使假轉 印基板接合的步驟、和藉由經過前述預製基板而對前述剝 離層施加能量，使前述剝離層與前述預製基板的界面、或 是前述剝離層的層內產生剝離，而將前述薄膜電子裝置轉 印於前述假轉印基板的步驟爲理想。 若如此進行，則將形成於預製基板上的薄膜電子裝置 暫且轉印於假轉印基板，之後，因爲再度轉印於第2基板 上，所以可將被接合在第2基板上的薄膜電子裝置之上下 ，配合在已被形成於預製基板上時的上下。 另外，在前述製造方法，前述電子裝置製作工程，係 將複數的前述薄膜電子裝置層積於前述第1基板上爲理想 〇 若如此地進行，則可以一次的轉印而轉印被複數層積 之薄膜電子裝置，變爲有效率。 另外，在前述製造方法，前述薄膜電子裝置係薄膜電 晶體之物爲理想。 -10- 200835996 本發明的電子機器，係以成爲具備：藉由前述的薄膜 電子裝置接合基板的製造方法而得到之薄膜電子裝置接合 基板，作爲其特徵。 如藉由此電子機器，則因爲以前述已進行般地，薄膜 電子裝置接合基板係具有高的信賴性，所以此電子機器本 身亦具有高信賴性。 【實施方式】 以下，詳細地說明本發明。 [薄膜電子裝置接合基板] 第1圖爲表示關於本發明的薄膜電子裝置接合基板的 一例之圖，第1圖中符號1爲薄膜電子裝置接合基板。此 薄膜電子裝置接合基板1係於樹脂基板2上，經由具有有 機官能基的金屬烷氧化物所構成的表面活性化處理層3， 接合薄膜電子裝置層4而構成。薄膜電子裝置層4係多數 配置薄膜電子裝置5而形成。另外，在樹脂基板2上，係 按照必要而設置以接著劑以及/或是黏著材料所構成的有 機接著層（無圖示）。 作爲樹脂基板2係不特別限定，熱可塑性樹脂、熱硬 化性樹脂均可使用。例如可使用：從聚乙烯、聚丙烯、乙 烯-丙烯聚合物、乙烯—醋酸乙烯共聚合物（EVA)等的聚_ 烴、環狀聚烯烴、變性聚烯烴、聚氯乙烯、聚氯乙炔、聚 苯乙烯、聚醯胺、聚亞醯胺、聚醯胺醯亞胺、聚碳酸酯、 -11 - 200835996 聚（4-甲基戊烯-1)、離子聚合物、丙烯酸樹脂、聚甲基丙 烯酸甲酯、丙烯-苯乙烯共聚合物（AS樹脂）、丁二烯-苯乙 烯共聚合物、乙烯-乙烯醇共聚合物（EVOH)、聚乙烯對苯 二甲酸酯（PET)、聚對苯二甲酸丁二酯（PBT)、聚對苯二甲 酸環己二醇（PC T)等的聚酯、聚醚、聚醚酮（PEEK)、聚醚 亞醯胺、聚甲醛（POM)、聚氧化二甲苯、變性聚氧化二甲 苯、芳香族聚酯、芳香族聚酯（液晶聚合物）、聚四氟乙烯 、聚偏氟乙烯、其他的氟系樹脂、苯乙烯系、聚烯烴系、 聚氯乙烯系、聚氨基甲酸乙酯系、氟橡膠系、氯化聚乙烯 系等的各種熱可塑性彈性體、環氧樹脂、酚樹脂、尿素樹 脂、三聚氰胺樹脂、不飽和聚酯、矽樹脂、氨基甲酸乙酯 等所之中所選擇1種或組合2種以上（例如作爲2層以上 的層積體）而使用。 另外，作爲如此的樹脂基板2，係關於其厚度亦不被 限定，但例如：如作爲厚度爲從數百nm至數十μηι左右 的薄膜狀，則可將薄膜電子裝置接合基板1全體變薄、進 行輕量化而爲理想。另外，樹脂基板2，特別是如能具有 可撓性，則成爲可讓薄膜電子裝置接合基板1本身具有司* 撓曲（F 1 e X i b 1 e)性而爲理想。 另外，在樹脂基板2上設置著有機接著層的情況，作 爲構成此有機接著層的接著劑（或是黏著材料），係不特別 限定’可使用各式各樣的材料。例如：可使用具有：環氧 基、羧基、羥基、酯基、矽醇基、矽基、胺基、腈基、鹵 素基、醯基、磺基等的官能基之樹脂。而且，在這些官能 -12- 200835996 基中，亦因以少的變性率而可提高接著性等的理由，所以 具有環氧基、酸酐基、酸酐的開環物基、羧基、羥基、矽 醇基等的極性基之樹脂係爲合適。 作爲構成薄膜電子裝置層4之代表性的薄膜電子裝置 5，係可舉出薄膜電晶體（Thin Film Transistor，TFT)。另 外，在此以外，亦例如可舉出：薄膜二極體、或矽的 P IN (p-intrinsic-η)接合所構成的光電變換元件（光感測器、 太陽能電池）、矽阻抗元件、其他的薄膜半導體裝置、電 極（例如··銦錫氧化物Indium Tin Oxide(ITO)、台階型 (mesa)膜般的透明電極）、開關元件、記憶體元件、壓電元 件等的致動器（actuator)、 微鏡（Micromirror)(壓電薄膜陶 瓷）、磁性記錄薄膜頭、線圈、感應器、薄膜高透磁材料 及組合了該些之微磁性裝置、濾光片、反射膜、分色鏡 (dichroic mirror )等 〇 然後，作爲薄膜電子裝置層4，多數配設前述之單一 種的薄膜電子裝置5而形成亦佳，另外，配設複數種的薄 膜電子裝置5而形成例如薄膜電路層亦佳。 另外，特別是在將薄膜電子裝置5作爲薄膜電晶體 (TFT)的情況，將此薄膜電子裝置5(TFT)配置爲矩陣狀， 而且藉由使之對應於各薄膜電子裝置5而形成像素電極（ 像素部）等，可將此薄膜電子裝置接合基板1作爲主動式 矩陣。 也就是，在以連接於配置爲矩陣狀的掃描線與訊號線 而將薄膜電子裝置5 (TFT)配置爲矩陣狀的同時，在這些薄 -13- 200835996 膜電子裝置5 (T F T)的汲極側連接像素電極而構成像素部， 而且藉由設置用以對前述掃描線及前述訊號線供給訊號的 驅動電路，可由前述薄膜電子裝置接合基板1形成主動式 矩陣基板。 作爲形成表面活性化處理層3的金屬烷氧化物，係作 爲金屬，含有由 Ti、Li、Si、Na、K、Mg、Ca、St、Ba、 Al、In、Ge、Bi、Fe、Cu、Y、Zr、以及 Ta 所構成的群之 中所選擇一種的材料爲合適地被使用，如此的金屬烷氧化 物係被一種或複數種使用而形成。該理由係，含有如此的 金屬而形成之烷氧化物，因爲泛用性及接著性係都良好， 因而可得：不大幅地招致成本提昇、具有高信賴性的薄膜 電子裝置接合基板1之故。 另外，此金屬烷氧化物，係於該烷氧化基，作爲側鏈 而具備有機官能基。此有機官能基，係胺基、氫硫基、羧 基、環氧基等的反應性的官能基，與形成前述樹脂基板2 或是前述有機接著層之有機矩陣反應，強固地結合。另外 ，此金屬烷氧化物，係具有爲加水分解基之[-OMe基（Me 爲金屬）]，此加水分解基係強固地結合於構成薄膜電子裝 置5的無機材料膜。也就是，薄膜電子裝置5，係作爲絕 緣膜之Si02膜或半導體層之Si等，多數地含有無機材料 薄膜而構成，但金屬烷氧化物的加水分解基，係強固地結 合於如此的無機材料薄膜。 如此般地，由此金屬烷氧化物所構成的表面活性化處 理層3，係對於由有機材料所構成的樹脂基板2側、對於 -14- 200835996 由無機材料所構成的薄膜電子裝置5(薄膜電子裝置層4)都 強固地結合。因而，薄膜電子裝置5(薄膜電子裝置層4)， 係對於樹脂基板2而成爲強固地接著。 因而，本實施形態的薄膜電子裝置接合基板1，係因 爲在樹脂基板2上強固地接合薄膜電子裝置5(薄膜電子裝 置層4 )，所以例如即使施加大的溫度變化，亦防止：起因 於線膨脹係數之差而薄膜電子裝置5係從樹脂基板2上彔ij 落之不合適；由此可得高的信賴性。 [薄膜電子裝置接合基板的製造方法] 接著，根據如此的薄膜電子裝置接合基板1之製造方 法，說明本發明的薄膜電子裝置接合基板的製造方法之^ 實施形態。而且，在此實施形態，係說明關於薄膜電子裝 置5爲薄膜電晶體（TFT)的情況。 在此製造方法，係首先，如第2A圖所示地準備第^ 基板1 〇，接著，作爲薄膜電子裝置配設工程，在此第1基 板1 〇的一方之面側形成含有多數的薄膜電子裝置5的薄 膜電子裝置層4。 在此，作爲形成薄膜電子裝置層4的方法，可採用： 將玻璃基板等的預製基板作爲第1基板1 〇而直接使用， 於此作入薄膜電子裝置5而形成薄膜電子裝置層4的方法 、與在預製基板上形成剝離層，在此剝離層上，形成薄膜 電子裝置層4(薄膜電子裝置5)的方法。 在T頁製基板直接作進薄膜電子裝置層4(薄膜電子裝竃 -15- 200835996 5)的方法，係此預製基板爲第1基板1 〇，藉由一般周知的 半導體程序而在此預製基板（第1基板10)形成由薄膜電子 裝置5(TFT)所構成的薄膜電子裝置層4。在此，關於形成 之薄膜電子裝置層4，係作爲複數層積了薄膜電子裝置5 的狀態亦佳。 在此方法，係爲了從第1基板1 0取出薄膜電子裝置 層4 (進行剝離），有例如採取將第1基板1 〇本身從裏面進 行硏磨或是飩刻等的手法之必要。 但是在如此的手法，係在薄膜電子裝置層4產生破壞 等，有損傷薄膜電子裝置5之虞。於是在特別重視良率的 情況等，係如開示於前述的日本特開平1 0 - 1 2 5 9 2 9號公報 、日本特開平1 0- 1 25930號公報、以及日本特開平ιοί 2 5 9 3 1 號公 報般地 ，在 預製基 板上經 由剝離 層而形 成薄膜 電子裝置5的方法爲合適。在此方法，係如在第2Α圖中 以2點虛線所示般的，將預製基板1 1與剝離層1 2合在一 起的構成，係成爲在本發明之第1基板1 〇。 作爲預製基板1 1，係在如後述地對於剝離層1 2進行 剝離處理之下，光透過之透光性基板者爲理想。另外，作 爲如此的預製基板1 1，係以信賴性高的材料所構成者爲理 想，特別是，以耐熱性優良的材料所構成者爲理想，例如 :石英玻璃或各種的耐熱性玻璃爲合適。 剝離層1 2，係具有：如吸收被照射的光，在該層內 以及/或是界面產生剝離（以下，稱爲「層內剝離」、「界 面剝離」）般的性質之材料，理想爲，藉由光的照射，而 -16- 200835996 構成剝離層1 2的物質的原子間或是分子間的結合力消失 或減少’也就是剝蝕產生，而達到層內剝離以及/或是界 面剝離的材料爲佳。 而且’亦有··藉由光的照射，從剝離層1 2放出氣體 ，被發現剝離（分離）效果的情況。也就是，具有：被含有 在剝離層1 2的成分係成爲氣而被放出之情況、與剝離層 1 2吸收光而瞬間成爲氣體，放出該蒸氣，有助於剝離（分 離）的情況。關於如此的剝離層1 2，係如記載於前述的日 本特開平1 0- 1 25931號公報般地，合適地使用表示在以下 的<A>~<F>2材料。 <A>非晶形矽（a-si) 在此非晶形矽中，係含有氫（Η)亦佳。在此情況，Η 的含有量，爲2原子％以上程度者爲理想、爲2〜20原子％ 程度者爲較理想。如此，若含有特定量的氫（Η)，則藉由 光的照射而放出氫，於剝離層1 2產生內壓，此係成爲剝 離上下的薄膜之力。 <Β>氧化物 作爲氧化物，具體而言係可舉出：氧化矽或矽氧化合 物、氧化鈦或鈦氧化合物、氧化锆或鉻氧化合物、氧化鑭 或鑭氧化化合物等的透電體（強介電質） <C>PZT、PLZT、PLLZT、PBZT等的陶瓷或是介電質（強 -17- 200835996 介電質） <D>氮化砂、氮化鋁、氮化鈦等的氮化物陶瓷 <E>有機高分子材料 作爲此有機高分子材料，係具有：_CH—、-CO-(酮） 、一C0NH —(胺）、—NH-(亞醯胺）、—COO —(酯）、—N = N-(唑） 、-(SIF)等的鍵結（藉由光的照射而這些的鍵結被 切斷）的材料’特別是，如爲多所具有這些的鍵結之材料 ’則任何材料均可。另外，此有機高分子材料，係在構成 式中具有芳香族碳化氫（1或2以上的苯環或是該縮合環） 的材料亦可。 <F>金屬 作爲此金屬，係例如可舉出：Al、Li、Ti、Mn、In、 Sn、Y、La、Ce、Nd、Pr、Gd、Sm或含有這些之中至少1 種的合金。 而且，剝離層12的厚度，係由剝離目的或剝離層1 2 的組成、層構成、形成方法等的諸條件而相異，但通常， 係lnm〜20μιη左右者爲理想，10nm〜2μηι左右者爲較理想 、4 Onm〜1 μπι左右者爲更理想。此係因爲，若剝離層1 2的 膜厚爲過薄，則膜的均勻性變低，有在剝離產生不均的情 形，另外，若膜厚過厚，則爲了確保剝離層12之良好的 剝離性，有將光的功率（光量）變大的必要，同時、之後在 除去剝離層12時，在該處理花費時間之故。另外，剝離 層1 2的膜厚，係儘可能均勻者爲理想。 -18- 200835996 剝離層12的形成方法，係不特別限定，按照膜組成 或膜厚等的諸條件而可適宜選擇。例如可舉出：CVD(包 含 MOCVD、PECVD、低壓 CVD、ECR-CVD)、蒸鍍、分子 束蒸鍍（MB)、濺鍍、離子鍍覆、PVD等的各種氣相成膜法 、電鍍、浸漬鍍覆（浸沾式）、無電式電鍍等的各種鍍覆法 、Langmuir-Blodgett (LB)法、旋轉塗佈、噴霧塗佈、滾筒 式塗佈等的塗佈法、各種印刷法、轉印法、噴墨法、粉末 噴射法等，組合這些之中的2種以上而形成亦可。 例如：在剝離層12的組成爲非晶形矽（a-Si)的情況， 係藉由CVD法，特別是低壓CVD法或電漿CVD法而成膜 者爲理想。另外，在將剝離層1 2以藉由溶膠凝膠法的陶 瓷而構成的情況，或在以有機高分子材料構成的情況，係 藉由塗佈法，特別是藉由旋轉塗佈而成膜者爲理想。 若如此進行而形成剝離層1 2，則如第2 A圖所示地， 藉由一般周知的半導體程序而在剝離層12上形成含有多 數的薄膜電子裝置5 (TFT)的薄膜電子裝置層4。在此，關 於形成之薄膜電子裝置層4，係作爲複數層積了薄膜電子 裝置5的狀態亦佳者係按照前述。薄膜電子裝置層4，係 例如：如放大薄膜電子裝置層4中的一部分之第3圖般地 ，包含：形成在由氧化矽膜所構成的中間層5 0上之薄膜 電子裝置5(TFT)而構成。另外，薄膜電子裝置5，係具備 :在多晶矽層注入η型不純物而形成的源極·汲極區域5 i 、和通道層5 2、和鬧極絕緣膜5 3、和閘極電極5 4、和層 間絕緣膜5 5、和例如由鋁所構成的電極5 6而構成。 -19- 200835996 而且，作爲連接剝離層12而被設置之中間層5〇，係 在氧化矽膜以外，亦可使用氮化矽膜等之其他的絕緣膜。 此中間層5 0，係以各種的目的而被形成的材料，例如作爲 :物理上或化學上保護薄膜電子裝置層4之保護層、絕緣 層、雷射光的遮光層、防止遷移（migration)用的阻障層· 、反射層之機能之中的’至少發揮1個的材料。作爲此之 中間層5 0的厚度，係按照使其發揮的機能的程度等而適 宜地決定，但通常，係作爲10 nm〜5 μιη左右者爲理想、作 爲40nm〜Ιμιη左右者爲較理想。 若如此進行而形成薄膜電子裝置層4，則作爲表面活 性化處理工程，如第2Β圖所示地在此薄膜電子裝置層4 的表面，也就是各薄膜電子裝置5的表面，形成由具有有 機官能基的金屬烷氧化物所構成之表面活性化處理層3。 形成此表面活性化處理層3的表面活性化處理工程， 係在本實施形態，係含有淨化工程、和連結處理工程、和 靜電除去工程。 淨化工程係將形成了薄膜電子裝置層4之第1基板 1 〇的形成了薄膜電子裝置層4的側之面（薄膜電子裝置配 設面），進行淨化處理的工程。作爲淨化處理方法，係進 行氧電漿處理工程、UV電漿處理工程、電暈處理工程、 蝕刻處理工程之中至少一種的處理者爲理想。藉由進行如 此的淨化處理，淨化薄膜電子裝置5的表面或設置此之配 設面，而例如可除去作爲異物之有機物。因而，在後工程 於薄膜電子裝置配設面使金屬烷氧化物附著之際，變爲可 -20- 200835996 使此更良好地附著。 連結處理工程，係表面活性化處理工程的主工程。另 外’連結處理工程，係用以形成表面活性化處理層3之實 質上的處理工程。另外，連結處理工程，係於前述淨化工 程後的前述薄膜電子裝置配設面，配置前述金屬烷氧化物 的工程。作爲金屬烷氧化物，係可使用具有前述之有機官 能基的金屬烷氧化物。在金屬烷氧化物之中，又以作爲金 屬而含有Si的Si系、含有Ti的Ti系、含有Zi的Zi系 、含有A1的A1系，其汎用性高、如前述地在樹脂基板2 上使薄膜電子裝置5接著時的接著性爲更良好等，而爲理 想。而且，S i系的金屬烷氧化物，係反應性高，因而反應 溫度比較低，另外亦有反應速度快等的有利點，而更理想 〇 作爲用以將如此的金屬烷氧化物，配置於前述薄膜電 子裝置配設面（使其附著）的手法，係不特別限定，例如可 採用：在含有金屬烷氧化物的溶液中，將形成了前述的薄 膜電子裝置層4之第1基板1 〇直接浸漬的方法（浸沾式塗 佈法），在前述薄膜電子裝置配設面，塗佈含有金屬烷氧 化物的溶液之方法（塗佈法）、在前述薄膜電子裝置配設面 使金屬烷氧化物的蒸氣接觸的方法（蒸氣處理法）等。作爲 塗佈法，係可舉出：旋轉塗佈法、網版印刷法、分注法、 噴墨法、噴霧法等。 而且，按照採用的手法，關於前述金屬烷氧化物，係 使用溶媒或分散媒，而且使用各種的調製劑，調整關於黏 -21 - 200835996 度等的性質、狀態亦佳。 若如此進行而形成由金屬烷氧化物所構 屬烷氧化物，係如前述地，該加水分解基係 合於構成薄膜電子裝置5的無機材料膜之狀 若是如此地進行而形成由金屬烷氧化物 則按照必要而進行乾燥處理之後，進行靜電 靜電除去工程，係藉由將前述薄膜電子裝置 是由金屬烷氧化物所構成的膜之形成面，藉 手法而進行靜電除去處理來進行。 接著，作爲基板接著工程，如第2C圖 形成之表面活性化處理層3，在前述的薄膜 薄膜電子裝置5)上配設樹脂基板2,也就是 脂製的第2基板。在此，關於向表面活性化 樹脂基板2的配設（接合），係如前述地，可 著劑以及/或是黏著材料所構成的有機接著 法、與不經由有機接著層而直接接著樹脂基 對於將樹脂基板2，經由有機接著層而 性化處理層3上，也就是前述薄膜電子裝置 裝置5)上，係將構成前述有機接著層的接著 料，配置於表面活性化處理層3上或是樹脂 ，之後，經由此有機接著層而於前述薄膜電 膜電子裝置5)上配置樹脂基板2，進行黏著 作爲將接著劑或黏著材料配置於表面活 上或是樹脂基板2的內面之方法，係不特別 成的膜，則金 成爲強固地結 態。 所構成的膜， 除去工程。此 配設面，也就 由一般周知的 所示地經由已 電子裝置層4( 在本發明的樹 處理層3上的 採用：經由接 層而接合的方 板2的方法。 接合於表面活 層4(薄膜電子 劑或是黏著材 基板2的內面 子裝置層4(薄 〇 性化處理層3 限定，例如可 -22- 200835996 採用溶液鑄造法或溶融壓出法。其中尤其是，溶液鑄造法 ’係因爲可將接著劑層（黏著材料層）的膜厚，更均勻地進 行塗佈，所以爲理想。在以溶液鑄造法形成有機接著層的 情況，將構成接著層的材料溶解於適當的溶劑而得到清漆 (varnish)，將此，藉由逆滾式塗佈法、凹版塗佈法、氣刀 塗佈法、刮刀塗佈（blade coating)法、浸沾式塗佈法、淋 幕式塗佈法、模具塗佈法、旋轉塗佈法等的手法，塗佈於 表面活性化處理層3上或樹脂基板2的內面。在如此的手 法中，亦由膜厚控制的容易性來看，逆滾式塗佈法、凹版 塗佈法、模具塗佈法、旋轉塗佈法爲合適。 另外，若經由如此的有機接著層而在前述薄膜電子裝 置層4(薄膜電子裝置5)上黏著樹脂基板2，則通常係爲了 除去有機接著層內的溶劑而進行乾燥處理。作爲此乾燥處 理，例如可使用：溫風加熱、惰性氣體加熱爐、烘爐等而 進行。而且，如能先在有機接著層形成用的材料混合硬化 劑，則亦可藉由加熱等而直接使接著劑硬化。 在此方法係，作爲樹脂基板2，準備：滿足關於可撓 性或耐熱性等的被要求的機能之基板，以藉由使用此，而 可得到：具有按照事先已設計的機能之薄膜電子裝置接合 基板1。 另外，作爲不經由有機接著層，在前述薄膜電子裝置 層4(薄膜電子裝置5)上直接接著樹脂基板2的方法，係可 照樣採用形成前述的有機接著層之方法。也就是，將藉由 前述方法而形成、使之硬化的有機接著層，直接作爲樹脂 -23- 200835996 基板2(在本發明的樹脂製的第2基板）而使用。而且，在 該情況，當然的，係將使用的樹脂（接著劑或黏著材料）， 配置於表面活性化處理層3上，使之硬化。 在此方法，因爲可藉由已配置（塗佈）樹脂的厚度而大 略決定得到的樹脂基板2之厚度，所以特別是在想使膜厚 變薄的情況下係爲有利。也就是，例如在想將樹脂基板2 作爲薄的樹脂薄膜的情況等時，比起將比較難操作的樹脂 薄膜作爲樹脂基板而使用，經由有機接著層而黏著；以如 本方法般地以塗佈樹脂液而使之硬化而形成薄膜狀的樹脂 基板2的方法，生產性提高較多之故。具體而言，雖亦依 存於所使用的樹脂的性質、狀態（固形分濃度或黏度等）， 但藉由採用旋轉塗佈法，而可將膜厚爲0. 1〜ΙΟμηι左右的 薄樹脂基板2，以均勻的膜厚形成。 若如此進行而在表面活性化處理層3上配設樹脂基板 2 ’則形成表面活性化處理層3的金屬烷氧化物，係該有 機官能基爲與樹脂基板2或是形成有機接著層的有機矩陣 進行反應，成爲強固地結合的狀態。 而且，特別是在以配合樹脂使之硬化而形成樹脂基板 2的情況，關於此樹脂，係可按照必要而使用配合了各種 的添加劑之材料。例如可將：硬化劑、難燃劑、塡充劑、 軟質聚合體、耐熱安定劑、耐天侯安定劑、老化防止劑、 均染劑、帶電防止劑、增滑劑、防黏劑、防霧劑、滑劑、 天然油、合成油、蠟、乳劑、磁性體、介電特性調整劑、 靭性劑等，按照被要求的樹脂基板2之性質、狀態而適宜 -24- 200835996 地添加。 之後’作爲轉印工程，如第2D圖所示地從前述第1 基板10剝離薄膜電子裝置層4 (薄膜電子裝置5)側，也就 是藉由從薄膜電子裝置層4 (薄膜電子裝置5)側剝離第1基 板10側，而將前述薄膜電子裝置層4(薄膜電子裝置5)轉 印於樹脂基板2上。作爲剝離第1基板丨〇側的方法，係 在如前述地未形成剝離層1 2的情況，藉由將第1基板1 0 的裏面側（與形成了薄膜電子裝置層4之側相反的一側）進 行硏削以及蝕刻等，而採用：削掉形成了第1基板1 0的 薄膜電子裝置層4(薄膜電子裝置5)之側的表層部之手法等 〇 另外，在形成剝離層12的情況，係爲了在此剝離層 1 2使剝離產生，所以從第1基板1 0的裏面側照射光。於 是，所照射的光，係透過了預製基板11(第1基板10)之後 ，被照射至剝離層1 2。藉由此，在剝離層1 2產生層內剝 離以及/或是界面剝離，結合力係減少或消滅。關於在剝 離層1 2產生層內剝離以及/或是界面剝離的原理，可推測 係有經由對剝離層1 2的構成材料產生剝蝕一事，或是被 包含於剝離層1 2的氣體之放出、或更進而經由在照射之 後產生的熔融、蒸散等的相變化而產生者。 在此，所謂剝蝕，係稱：吸收了照射光之固定材料（ 剝離層1 2的構成材料）係被光化學的或是熱的激發，切斷 該表面或內部的原子或分子的鍵結而放出之情事，主要是 以剝離層1 2的全部或一部分產生熔融、蒸散（氣化）等的相 -25- 200835996 變化之現象而顯現。另外，藉由前述相變化而成爲微小的 發泡狀態，亦有鍵結力下降之情事。 剝離層1 2爲產生層內剝離、或產生界面剝離、或是 產生該兩方，係被剝離層1 2的組成、或其他各種的主要 原因左右，作爲該主要原因之一，可舉出：被照射的光之 種類、波長、強度、到達深度等的條件。 作爲照射的光，如係讓剝離層1 2產生層內剝離以及/ 或是界面剝離的光，則任何的光亦佳，例如可舉出：X光 、紫外線、可見光、紅外線（熱線）、雷射光、毫米波、微 波、電子束、放射線（α線、/3線、r線）等。其中尤其是 ，在使剝離層1 2的剝離（剝蝕）容易產生之點上，雷射光爲 理想。 作爲使此雷射光產生的雷射裝置，係可舉出各種氣體 雷射、固體雷射（半導體雷射）等，而可合適地使用準分子 雷射、Nd-YAG雷射、Ar雷射、C02雷射、CO雷射、He-N e雷射等，其中尤其是準分子雷射爲特別理想。準分子 雷射，係因爲在短波長範圍輸出高能量，所以可在非常短 時間內使剝離層1 2產生剝蝕，因而在樹脂基板2或預製 基板1 1等，幾乎不產生溫度上昇之情事。由此可不使劣 化、損傷產生，在剝離層1 2使剝離進行。 如此進行而若從薄膜電子裝置層4(薄膜電子裝置5) 側剝離第1基板1 〇(預製基板1 1 )，則按照必要，除去殘存 在薄膜電子裝置層4(薄膜電子裝置5)側的剝離層12。具 體而言，係藉由洗淨、鈾刻、灰化、硏磨等的方法或是組 -26- 200835996 合這些之方法而除去。藉由此，將薄膜電子裝置層4(薄膜 電子裝置5)轉印於樹脂基板2上，可得如第1圖所示般的 薄膜電子裝置接合基板i。 在如此的製造方法，係於薄膜電子裝置層4(薄膜電子 裝置5)上’經由具有有機官能基之金屬烷氧化物所構成的 表面活性化處理層3而配設樹脂基板2，藉由此而在樹脂 基板2接合薄膜電子裝置層4 (薄膜電子裝置5)而進行轉印 °因此’如前述地金屬烷氧化物的有機官能基係可強固地 結合於樹脂基板2側，加水分解基係可強固地結合於薄膜 電子裝置層4(薄膜電子裝置5)側，於樹脂基板2上可強固 地接合薄膜電子裝置層4(薄膜電子裝置5)。因而，例如即 使施加大的溫度變化，亦可防止起因於線膨脹係數的差而 薄膜電子裝置5係從樹脂基板2上剝落之不合適。由此可 得具有高信賴性的薄膜電子裝置接合基板1。 第4A圖〜第4D圖及第5A圖〜第5D圖，係表示本發 明的薄膜電子裝置接合基板的製造方法之其他的實施形態 之圖。此實施形態與表示於第2A圖〜第2D圖之實施形態 主要相異處，係在對於之前的實施形態爲進行1次的轉印 ’在此實施形態爲進行2次的轉印之點上。 在此貫施形態’係首先，如第4A圖所示地，在預製 基板1 1上經由剝離層12而形成薄膜電子裝置層4(薄膜電 子裝置5)。關於此工程，係與在先前的實施形態說明之工 程相同。 接著，如第4 B圖所示地，在前述預製基板11之形成 -27- 200835996 了薄膜電子裝置層4(薄膜電子裝置5)之側的面，經由以接 著劑所構成的接著層1 3而使假轉印基板1 4接合。 作爲形成接著層1 3的接著劑，係在形成前述之有機 接著層的材料之中，可合適地使用例如：容易溶解於水等 的溶劑之材料。 另外，作爲假轉印基板1 4係不特別限定而可使用各 種的材料。具體而言，玻璃基板或樹脂基板等，不限定於 無機材料、有機材料而可使用各種材質之材料。 接著，如第4C圖所示地應在前述剝離層1 2使剝離產 生’與先前的實施形態同樣地進行而從預製基板1 1的裏 面側照射光，將此照射至剝離層1 2。由此，對剝離層1 2 施加能量而使剝蝕產生，藉由讓剝離層1 2產生層內剝離 以及/或是界面剝離，如第4 D圖所示地可在剝離層1 2使 剝離進行。 若如此進行而從薄膜電子裝置層4(薄膜電子裝置5) 側剝離預製基板1 1，則如第5 A圖所示地，除去殘存於薄 膜電子裝置層4(薄膜電子裝置5)的剝離層12。具體而言 ’係藉由：洗淨、蝕刻、灰化、硏磨等的方法或是組合這 些方法，而進行除去。由此，可得將薄膜電子裝置層4 (薄 膜電子裝置5)設置於假轉印基板14上而形成的構造。然 後’在如此的構造，假轉印基板14與接著層1 3，係成爲 :設置薄膜電子裝置層4(薄膜電子裝置5)而形成之在本發 明的第1基板。 接著，作爲表面活性化處理工程，如第5B圖所示地 -28- 200835996 在此薄膜電子裝置層4的裏面，也就是各薄膜電子裝置5 的裏面，形成由具有有機官能基的金屬烷氧化物所構成之 表面活性化處理層3。 形成此表面活性化處理層3的表面活性化處理工程， 係可與先前的實施形態相同地，藉由淨化工程、和連結處 理工程、和靜電除去工程而進行。 接者’作爲基板接著工程，如第5 C圖所示地經由已 形成之表面活性化處理層3，在前述的薄膜電子裝置層4 ( 薄膜電子裝置5)上，也就是薄膜電子裝置層4(薄膜電子裝 置5)的裏面側，配設樹脂基板2(樹脂製的第2基板）。在 此，關於向表面活性化處理層3上的樹脂基板2的配設（ 接合），係如前述地，可採用：經由接著劑以及/或是黏著 材料所構成的有機接著層而接合的方法、與不經由有機接 著層而直接接著樹脂基板2的方法。 之後’作爲轉印工程，如第5D圖所示地，藉由將接 著層1 3溶解於水等的溶劑，而從前述薄膜電子裝置層4 ( 薄膜電子裝置5 )側剝離假轉印基板1 4側，將前述薄膜電 子裝置層4(薄膜電子裝置5)轉印於樹脂基板2上。 右如此進行而從薄膜電子裝置層4(薄膜電子裝置5) 側剝離假轉印基板1 4，按照必要，除去殘存於薄膜電子裝 置層4(薄膜電子裝置5)的接著層13。由此，將薄膜電子 裝置層4(薄膜電子裝置5)轉印於樹脂基板2上，可得第i 圖所示般的薄膜電子裝置接合基板1。 在如此的製造方法’亦與先前的實施形態相同，在薄 -29- 200835996 膜電子裝置層4(薄膜電子裝置5)上經由表面活性化處理層 3而配設樹脂基板2，藉由此而對樹脂基板2接合薄膜電 子裝置層4(薄膜電子裝置5)而進行轉印。因此，如前述地 ，金屬烷氧化物的有機官能基係強固地結合於樹脂基板2 側，加水分解基係強固地結合於薄膜電子裝置層4(薄膜電 子裝置5)側。藉由此，可在樹脂基板2上強固地接合薄膜 電子裝置層4 (薄膜電子裝置5)。 因而，例如：即使被施加大的溫度變化，亦可防止起 因於線膨脹係數的差而薄膜電子裝置5從樹脂基板2上剝 落之不合適的情事；由此而可得具有高信賴性的薄膜電子 裝置接合基板1。 另外，在本實施形態的製造方法，由於係將形成於預 製基板1 1上的薄膜電子裝置5暫且轉印於假轉印基板1 4 ，之後，再度轉印於樹脂基板2(第2基板）上，所以可將 被接合在樹脂基板2上的薄膜電子裝置5之上下，也就是 該表面側、裏面側，配合在已被形成於預製基板1 1上時 的上下（表面側、裏面側）。 接著，說明關於作爲本發明的電子機器之一例的顯示 裝置。第6圖，爲表示作爲顯示元件而具有電泳元件而構 成之顯示裝置的圖。此顯示裝置18係具有：元件基板20 、和透明基板2 1、和在被挾持於這些基板2 0、2 1之間的 同時，封入電泳分散液之微膠囊2 2。 元件基板20係由前述之本發明的薄膜電子裝置接合 基板所構成。另外，在元件基板2 0，係在由樹脂所構成之 -30- 200835996 薄膜狀、可撓性的樹脂基板20a的內面，經由絕緣層等的 中間層（無圖示）而多數配設由TFT(薄膜電晶體）所構成的 驅動元件（開關元件）23。在這些驅動元件23，係各別地對 應而形成像素電極24，元件基板20係作爲主動式矩陣基 板而構成。 驅動元件23，係具有：設置於前述的中間層（無圖示） 之上的半導體膜25、和在此半導體膜25上經由閘極絕緣 膜26而設置之閘極電極27、和連接於前述半導體25的源 極區域（無圖示）源極電極28、和連接於前述半導體25的 汲極區域（無圖示）的像素電極（汲極電極）24。 而且，在前述閘極電極2 7上，係如覆蓋閘極電極2 7 般地，形成層間絕緣膜29。前述源極電極28，係通過被 形成在層間絕緣膜29的接觸孔30而被電性地拉出至前述 層間絕緣膜2 9上，被形成於接觸孔3 0上。另外，在層間 絕緣膜2 9上，以與被形成於層間絕緣膜2 9的接觸孔3 2 電性地連接的方式，形成中繼電極3 1。另外，以覆蓋這些 中繼電極3 1及源極電極2 8的方式，形成層間絕緣膜3 3。 於此層間絕緣膜33上，形成像素電極24(汲極電極）。像 素電極24係通過接觸孔34而被電性地拉出，導通於前述 中繼電極3 1。 透明基板2 1係具有：由透明樹脂等所構成的薄膜狀 而可撓性的透明可撓性基板2 1 a、與在透明可撓性基板 21a的內面，藉由從ITO等所構成的材料而構成之透明的 共通電極3 5。透明基板2 1的外面側爲顯示面（觀測面）。 -31 - 200835996 在此’作爲此透明可撓性基板2 1 a的材料，係例如可 地使用：聚乙烯對苯二甲酸酯（PET)、聚醚颯（PES)、 酸酯（PC)。 在元件基板20與透明基板2 1之間，係特別是在 像素電極24上配置著微膠囊22，藉由此而微膠囊22 成顯示裝置的顯示區域。於微膠囊2 2係封入作爲顯 料之電泳分散液。微膠囊2 2的全部，係形成爲大致 的直徑。該直徑爲例如約3 0 μιη左右。 電泳分散液，係包含：電泳粒子、與使該分散之 分散媒。作爲前述液相分散媒，係可使用：水、甲醇 醇、異丙醇、丁醇、辛醇、2-甲氧基乙醇等的醇系溶 乙酸乙酯、乙酸丁酯等的各種酯類；丙酮、丁酮、甲 丁基酮等的酮類；戊烷、己烷、辛烷等的脂肪族碳化 ;環己烷、甲基環己烷等的脂環式碳化氫；苯、甲苯 甲苯、己基苯、庚基苯、辛基苯、壬基苯、癸基苯、 烷基苯、十二烷基苯、十三烷基苯、十四烷基苯等的 烷基之苯類等之芳香族碳化氫；二氯甲烷、三氯甲烷 氯化碳、1，2-二氯乙烷等的鹵素化碳化氫、羧酸鹽 其他各種的油類等的單獨、或是在這些的混合物配合 面活性劑等之材料。 另外，電泳粒子，係具有：在液相分散媒中藉由 位差的電泳而移動的性質之有機或無機的粒子（高分 膠體）。 作爲此電泳粒子，係例如可使用：苯胺墨、碳黑 合適 聚碳 前述 係形 示材 同一 液相 、乙 媒； 基異 氫系 十一 長鍵 、四 或是 了界 因電 子或 、鈦 -32- 200835996 黑等的黑色顏料、二氧化鈦、氧化鋅、三氧化二銻等的白 色顏料；單偶氮、雙偶氮、多偶氮等的偶氮系顏料；異口引 哚啉酮（isoindolinone)、黃鉛、黃色氧化鐵、鎘黃、鈦黄 、銻等的黃色顏料；單偶氮、雙偶氮、多偶氮等的偶氮系 顏料；喹吖D定酮紅（quinacridone red )、鉻朱紅（chrome vermilion)等的紅色顏料；酞菁藍（Phthalocyanine blue)、 陰丹士林藍（indanthrene blue)、蒽醌系染料、紺青、群青 、鈷藍等的藍色顏料；酞菁綠 （Phthalocyanine green)等 的綠色顏料等之1種或2種以上。 而且，在本例的顯示裝置，係在前述微膠囊22封入 2種電泳粒子，一方帶負電、另一方帶正電。作爲這二種 的電泳粒子，係例如可使用：爲白色顏料之二氧化鈦、和 爲黑色顏料之碳黑。然後’藉由使用如此的白色、黑色的 二種電泳粒子，而例如在爲文字等的顯示的情況，可藉由 黑色的電泳粒子而顯示文字等，藉由白色的電泳粒子而顯 示該背景。 另外，僅使用一種電泳粒子，使此泳動於共通電極 3 5側、或是像素電極2 4側而爲顯示亦佳。 另外，這些微膠囊22係例如對於透明基板2 1，在該 共通電極3 5上藉由結合劑3 6而被固定。 一方面，這些微膠囊22係對於元件基板2 0，在該像 素電極24上例如藉由兩面接著薄板37而被固定。 藉由如此的構成而微膠囊22係被挾持於元件基板20 與透明基板2 1之間’構成顯示裝置1 8。 -33 - 200835996 在如此的構成之顯示裝置18 ’係因爲具備由前述的 薄膜電子裝置接合基板1所構成的元件基板20，所以由薄 膜電子裝置接合基板1具有高的信賴性而元件基板20亦 有高的信賴性，因而此顯示裝置1 8本身亦有高的信賴性 〇 而且，作爲本發明的電子機器，係作爲顯示元件，不 限定於使用了電泳元件之前述電泳顯示裝置，作爲：有機 EL顯不裝置或液晶顯不裝置、電致變色（E1 ectrochromic) 裝置等的顯示裝置，而且將這些顯示裝置作爲顯示手段之 電性光學裝置等亦佳。另外，在將薄膜電子裝置作爲記憶 體元件的情況’亦可適用於·· SRAM等的各種記憶體裝置 、中央運算處理裝置（CPU)、或是指紋感測器等的具有個 人認證機能之裝置及感測器裝置。 按照上述，如藉由本發明’則可達成：在有機基板上 使多量含有無機材料膜的薄膜電子裝置或由這些所構成的 薄膜電路層’以高接著力接合，藉由此而防止剝落而確保 筒信賴性之薄膜電子裝置接合基板的製造方法、而且提供 電子機器之目的。 【圖式簡單說明】 第1圖爲有關本發明的薄膜電子裝置接合基板的一例 之槪略構成圖。 第2A〜第2D圖爲薄膜電子裝置接合基板的製造工程 說明圖。 -34- 200835996At least a metal alkoxide selected from the group consisting of Fe, Cu, Y, Zr, and Ta is preferred. Such a metal alkoxide is available because of its versatility and adhesion. Therefore, a thin film electronic device bonded substrate which does not significantly increase the cost and has high cost is available. Further, in the above-described manufacturing method, the surface activation processing system includes a purification process for purifying a thin device disposed on a first substrate of the thin film electronic device, and the film after the process It is preferable that the electronic device is disposed on the surface, and the connection processing of the metal alkane is performed, and the surface of the electronic device after the connection processing is performed, and the static electricity removal process is performed. In this way, by performing the purification treatment on the thin film electronic distribution surface in the purification process, the alkoxide is more preferably attached to the thin film electronic device arrangement surface in the subsequent connection processing. On the other hand, the electrostatic discharge treatment is performed on the surface of the thin film electronic device, and the electrical performance of the thin film electronic device is deteriorated to be more bonded to the second substrate. Further, in the above-described purification method, it is preferable that at least one of the purification treatment works, such as a slurry treatment project, a UV plasma treatment project, a corona treatment project, and a hungry project, is carried out. From Ti Bi, a Duan reliance process, the membrane is electrically oxidized, the device is made of gold, and the oxygen is not good. -8 - 200835996 If such purification treatment is performed, the surface of the thin film electronic device is cleaned or has been set. In the arrangement surface, for example, by removing the organic substance as a foreign matter, the metal alkoxide is more adhered to the surface of the thin film electronic device. In addition, in the above-described production method, the metal alkoxide is subjected to a spin coating method, a steam treatment method, a dip coating method, a screen printing method, a dispensing method, an inkjet method, or the like. A manual arranger of at least one of the spray methods is desirable. By doing so, the metal alkoxide layer can be favorably adhered to the surface of the thin film electronic device. Further, in the above-described manufacturing method, it is preferable that the substrate is subsequently bonded to the second substrate in which the resin is bonded to the thin film electronic device. By doing so, it is prepared to satisfy the desired function of the substrate such as flexibility or heat resistance, and by using this, a thin film electronic device bonded substrate having a function designed in advance can be obtained. Further, in the above-described manufacturing method, it is preferable that the second substrate is formed by applying a resin liquid to the thin film electronic device and curing it. For example, according to the present invention, for example, the second substrate is intended to be used as the second substrate. In the case of a thin resin film, a resin liquid can be applied to cure the resin to form a second substrate. Therefore, productivity can be improved as compared with the case of using a resin film which is relatively difficult to handle. Further, in the above manufacturing method, the electronic device manufacturing process in which the thin film electronic device is provided on the first substrate includes a step of forming a peeling layer on a precast substrate, -9-200835996, and a plurality of films on the peeling layer. The step of laminating to form the aforementioned thin film electronic device is desirable. In this manner, when the thin film electronic device is peeled off from the first substrate, peeling occurs in the peeling layer, and the thin film electronic device is easily peeled off and reliably transferred onto the second substrate. Further, in the above manufacturing method, the electronic device manufacturing process includes a step of forming a peeling layer on a prefabricated substrate, a step of forming a plurality of films on the peeling layer to form the thin film electronic device, and the prefabrication a step of forming a surface of the thin film electronic device of the substrate, bonding the dummy transfer substrate via an adhesive, and applying energy to the release layer by passing through the pre-formed substrate to form an interface between the release layer and the pre-formed substrate or the peeling The step of peeling the layer in the layer, and transferring the thin film electronic device to the dummy transfer substrate is preferable. In this manner, the thin film electronic device formed on the prefabricated substrate is temporarily transferred onto the dummy transfer substrate, and then transferred to the second substrate again, so that the thin film electronic device bonded to the second substrate can be bonded Above and below, the upper and lower sides are formed when they are formed on the prefabricated substrate. Further, in the above-described manufacturing method, in the electronic device manufacturing process, it is preferable that a plurality of the thin film electronic devices are stacked on the first substrate, and the plurality of layers can be transferred by one transfer. The thin film electronic device becomes efficient. Further, in the above production method, the thin film electronic device is preferably a thin film transistor. -10-200835996 The electronic device of the present invention is characterized in that it is a bonded circuit of a thin film electronic device obtained by a method for manufacturing a substrate by a thin film electronic device. According to this electronic device, since the thin film electronic device bonding substrate has high reliability as described above, the electronic device itself has high reliability. [Embodiment] Hereinafter, the present invention will be described in detail. [Thin-film electronic device bonding substrate] Fig. 1 is a view showing an example of a thin film electronic device bonding substrate according to the present invention, and reference numeral 1 in the first drawing is a thin film electronic device bonding substrate. The thin film electronic device bonding substrate 1 is bonded to the resin substrate 2, and is bonded to the thin film electronic device layer 4 via a surface activation layer 3 composed of a metal alkoxide having an organic functional group. The thin film electronic device layer 4 is formed by arranging a plurality of thin film electronic devices 5. Further, on the resin substrate 2, an organic adhesive layer (not shown) made of an adhesive and/or an adhesive material is provided as necessary. The resin substrate 2 is not particularly limited, and any of a thermoplastic resin and a thermosetting resin can be used. For example, poly-hydrocarbons such as polyethylene, polypropylene, ethylene-propylene polymers, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefins, denatured polyolefins, polyvinyl chloride, polyvinyl chloride, and the like can be used. Polystyrene, polyamide, polyamidoamine, polyamidimide, polycarbonate, -11 - 200835996 poly(4-methylpentene-1), ionic polymer, acrylic resin, polymethyl Methyl acrylate, propylene-styrene copolymer (AS resin), butadiene-styrene copolymer, ethylene-vinyl alcohol copolymer (EVOH), polyethylene terephthalate (PET), poly Polyesters such as butylene terephthalate (PBT), polyethylene terephthalate (PC T), polyether, polyether ketone (PEEK), polyether amide, polyoxymethylene (POM) , polyoxymethylene, denatured polyxylene oxide, aromatic polyester, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluorine resin, styrene, polyolefin , various thermoplastic elastomers such as polyvinyl chloride, polyurethane, fluororubber, and chlorinated polyethylene. One or a combination of two or more selected from the group consisting of a solvent, an epoxy resin, a phenol resin, a urea resin, a melamine resin, an unsaturated polyester, an anthracene resin, and a urethane (for example, a laminate of two or more layers) ) and use. In addition, the thickness of the resin substrate 2 is not limited. For example, if the thickness is from about several hundred nm to several tens of μm, the thin film electronic device can be thinned as a whole. It is ideal for lightweighting. Further, in particular, if the resin substrate 2 is flexible, it is preferable that the thin film electronic device bonding substrate 1 itself has a function of F 1 e X i b 1 e. Further, when an organic adhesive layer is provided on the resin substrate 2, the adhesive (or adhesive material) constituting the organic adhesive layer is not particularly limited, and various materials can be used. For example, a resin having a functional group such as an epoxy group, a carboxyl group, a hydroxyl group, an ester group, a decyl group, a decyl group, an amine group, a nitrile group, a halogen group, a fluorenyl group or a sulfo group can be used. Further, among these functional group-12-200835996, since the reason for improving the adhesion and the like with a small denaturing ratio, the ring-opening group, the carboxyl group, the hydroxyl group, and the decyl alcohol having an epoxy group, an acid anhydride group, and an acid anhydride are preferable. A resin having a polar group such as a base is suitable. A typical thin film electronic device 5 constituting the thin film electronic device layer 4 is a thin film transistor (TFT). In addition, a photoelectric conversion element (photosensor, solar cell), a tantalum impedance element, and a P IN (p-intrinsic-n) junction of a thin film diode or a tantalum may be used. Other thin film semiconductor devices, electrodes (for example, Indium Tin Oxide (ITO), a transparent electrode like a mesa film), actuators such as a switching element, a memory element, and a piezoelectric element ( Actuator), micromirror (piezoelectric thin film ceramic), magnetic recording film head, coil, inductor, thin film high magnetic permeability material, and micromagnetic device, filter, reflective film, dichroic mirror combined with the same (dichroic mirror) and the like, and the thin film electronic device layer 4 is preferably formed by a plurality of the above-described single thin film electronic devices 5, and a plurality of thin film electronic devices 5 are disposed to form, for example, a thin film circuit layer. good. Further, particularly in the case where the thin film electronic device 5 is used as a thin film transistor (TFT), the thin film electronic device 5 (TFT) is arranged in a matrix shape, and a pixel electrode is formed by corresponding to each thin film electronic device 5 (Pixel portion) or the like, the thin film electronic device can be bonded to the substrate 1 as an active matrix. That is, while the thin film electronic devices 5 (TFTs) are arranged in a matrix shape by being connected to the scanning lines and the signal lines arranged in a matrix, the bungee of these thin -13-200835996 film electronic devices 5 (TFTs) The pixel portion is connected to the side of the pixel electrode, and a driving circuit for supplying a signal to the scanning line and the signal line is provided, and the active matrix substrate can be formed by bonding the substrate 1 to the thin film electronic device. The metal alkoxide forming the surface activation treatment layer 3 contains, as a metal, Ti, Li, Si, Na, K, Mg, Ca, St, Ba, Al, In, Ge, Bi, Fe, Cu, A material selected from the group consisting of Y, Zr, and Ta is suitably used, and such a metal alkoxide is formed by one or a plurality of types. The reason for this is that the alkoxide formed by containing such a metal is excellent in both general-purpose and adhesive properties, and thus it is possible to obtain a thin-film electronic device in which the substrate 1 is not greatly increased in cost and has high reliability. . Further, the metal alkoxide is attached to the alkoxy group and has an organic functional group as a side chain. The organic functional group is a reactive functional group such as an amine group, a hydrogenthio group, a carboxyl group or an epoxy group, and is strongly bonded to the organic matrix forming the resin substrate 2 or the organic underlayer. Further, the metal alkoxide has a [-OMe group (Me is a metal)] which is a hydrolyzable group, and this hydrolyzable group is strongly bonded to the inorganic material film constituting the thin film electronic device 5. In other words, the thin film electronic device 5 is mainly composed of a SiO 2 film of an insulating film or Si of a semiconductor layer, and the inorganic material film is contained, but the water-decomposing group of the metal alkoxide is strongly bonded to such an inorganic material. film. In this manner, the surface activation treatment layer 3 composed of the metal alkoxide is a thin film electronic device 5 made of an inorganic material on the side of the resin substrate 2 made of an organic material and 14-200835996. The electronic device layer 4) is strongly bonded. Therefore, the thin film electronic device 5 (thin film electronic device layer 4) is firmly adhered to the resin substrate 2. Therefore, in the thin film electronic device of the present embodiment, since the thin film electronic device 5 (thin film electronic device layer 4) is strongly bonded to the resin substrate 2, for example, even if a large temperature change is applied, it is prevented from being caused by the wire. The difference in expansion coefficient and the thin film electronic device 5 are not suitable for 彔 ij from the resin substrate 2; thereby, high reliability can be obtained. [Manufacturing Method of Bonded Substrate of Thin Film Electronic Device] Next, an embodiment of a method for manufacturing a bonded substrate of a thin film electronic device according to the present invention will be described based on the method of manufacturing the bonded electronic device of the thin film electronic device. Further, in this embodiment, the case where the thin film electronic device 5 is a thin film transistor (TFT) will be described. In the manufacturing method, first, the first substrate 1 is prepared as shown in FIG. 2A, and then, as a thin film electronic device, a plurality of thin film electrons are formed on one surface side of the first substrate 1 Thin film electronics layer 4 of device 5. Here, as a method of forming the thin film electronic device layer 4, a method in which a prefabricated substrate such as a glass substrate is used as the first substrate 1 can be used, and the thin film electronic device 5 is formed by forming the thin film electronic device 5 And a method of forming a thin film electronic device layer 4 (thin film electronic device 5) on the prepreg substrate by forming a peeling layer. The T-sheet substrate is directly formed into the thin film electronic device layer 4 (Thin-Electronic Mount -15-200835996 5), wherein the pre-fabricated substrate is the first substrate 1 〇, and the pre-fabricated substrate is prepared by a generally known semiconductor program. The (first substrate 10) forms a thin film electronic device layer 4 composed of a thin film electronic device 5 (TFT). Here, the formed thin film electronic device layer 4 is also preferably in a state in which the thin film electronic device 5 is laminated in plural. In this method, in order to take out the thin film electronic device layer 4 from the first substrate 10 (peeling), for example, it is necessary to honing or engraving the first substrate 1 itself from the inside. However, in such a method, damage occurs in the thin film electronic device layer 4, and the thin film electronic device 5 is damaged. Therefore, in the case of paying attention to the yield, etc., the above-mentioned Japanese Patent Laid-Open Publication No. Hei 10- 1 2 5 9 2 9 , Japanese Patent Laid-Open Publication No. Hei 01-125930, and Japanese Patent Laid-Open ιοί 2 5 9 A method of forming the thin film electronic device 5 via a peeling layer on a prefabricated substrate is suitable as in the case of No. 1 publication No. 1. In this method, the pre-formed substrate 1 1 and the peeling layer 1 2 are combined as shown by a two-dotted line in the second drawing, and the first substrate 1 is formed in the first substrate of the present invention. The prefabricated substrate 1 is preferably a light-transmitting substrate which is light-transmissive to the release layer 1 2 as will be described later. In addition, as such a prefabricated substrate 1, it is preferable to use a material having high reliability, and it is preferable to use a material excellent in heat resistance, for example, quartz glass or various heat resistant glass is suitable. . The peeling layer 1 2 has a property of absorbing the irradiated light and causing peeling (indicated as "in-layer peeling" or "interfacial peeling" in the layer and/or the interface), and is preferably a material. By the irradiation of light, -16-200835996 The inter-atomic or intermolecular bonding force of the substance constituting the peeling layer 12 disappears or decreases, that is, the erosion is generated, and the in-layer peeling and/or the interfacial peeling are achieved. The material is better. Further, there is a case where the gas is released from the peeling layer 1 2 by the irradiation of light, and the peeling (separation) effect is found. In other words, when the component contained in the peeling layer 12 is released as a gas and the light is absorbed by the peeling layer 12, the gas is instantaneously released, and the vapor is released to facilitate peeling (separation). The above-mentioned peeling layer 1 2 is described in the above-mentioned Japanese Patent Application Laid-Open No. Hei No. Hei. <A>~ <F>2 material. <A> Amorphous germanium (a-si) In this amorphous germanium, hydrogen (Η) is also preferred. In this case, the content of ruthenium is preferably 2 atom% or more, and is preferably 2 to 20 atom%. As described above, when a specific amount of hydrogen (Η) is contained, hydrogen is released by irradiation of light, and internal pressure is generated in the peeling layer 12, which is a force for peeling off the upper and lower films. <Β> The oxide is an oxide, and specific examples thereof include a ruthenium oxide or a ruthenium oxide compound, a titanium oxide or a titanium oxide compound, a zirconia or a chromium oxide compound, a ruthenium oxide or a ruthenium oxide compound. (strong dielectric) <C> Ceramics or dielectrics of PZT, PLZT, PLLZT, PBZT, etc. (strong -17- 200835996 dielectric) <D> nitride ceramics such as nitrided sand, aluminum nitride, titanium nitride, etc. <E> The organic polymer material as the organic polymer material has: _CH-, -CO-(ketone), a CONH-(amine), -NH-(liminamide), -COO-(ester) a material in which -N = N-(azole), -(SIF), etc. (the bonds are cut by irradiation of light), in particular, as a material having many of these bonds 'There can be any material. Further, the organic polymer material may be a material having an aromatic hydrocarbon (one or two or more benzene rings or the condensed ring) in the formula. <F> The metal as the metal may, for example, be Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, Sm or an alloy containing at least one of these. . Further, the thickness of the peeling layer 12 differs depending on the conditions of the peeling purpose, the composition of the peeling layer 12, the layer constitution, the forming method, and the like, but generally, it is preferably about 1 nm to 20 μm, and about 10 nm to 2 μm. It is ideal for those who are ideal, about 4 Onm~1 μπι. In this case, when the film thickness of the peeling layer 12 is too thin, the uniformity of the film is lowered, and unevenness may occur in peeling, and if the film thickness is too thick, the peeling layer 12 is ensured to be good. The peeling property is necessary to increase the power (light amount) of light, and at the same time, when the peeling layer 12 is removed, it takes time for the treatment. Further, it is preferable that the film thickness of the release layer 12 is as uniform as possible. -18-200835996 The method for forming the release layer 12 is not particularly limited, and may be appropriately selected depending on conditions such as film composition and film thickness. For example, CVD (including MOCVD, PECVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam deposition (MB), sputtering, ion plating, PVD, various vapor phase deposition methods, plating, and the like Various plating methods such as immersion plating (dip coating), electroless plating, Langmuir-Blodgett (LB) method, spin coating, spray coating, drum coating, etc., various printing methods, transfer The printing method, the inkjet method, the powder jet method, and the like may be formed by combining two or more of these. For example, in the case where the composition of the peeling layer 12 is amorphous yttrium (a-Si), it is preferable to form a film by a CVD method, in particular, a low pressure CVD method or a plasma CVD method. Further, in the case where the peeling layer 12 is formed of a ceramic by a sol-gel method or in the case of an organic polymer material, a film is formed by a coating method, in particular, by spin coating. It is ideal. When the peeling layer 1 2 is formed as described above, as shown in FIG. 2A, the thin film electronic device layer 4 including a plurality of thin film electronic devices 5 (TFTs) is formed on the peeling layer 12 by a generally known semiconductor program. . Here, as for the thin film electronic device layer 4 to be formed, the state in which the thin film electronic device 5 is laminated as a plurality of layers is also as described above. The thin film electronic device layer 4 is, for example, a third embodiment of the enlarged thin film electronic device layer 4, and includes a thin film electronic device 5 (TFT) formed on the intermediate layer 50 composed of a hafnium oxide film. And constitute. Further, the thin film electronic device 5 includes a source/drain region 5 i formed by implanting an n-type impurity into the polysilicon layer, a channel layer 52, a noise insulating film 53, and a gate electrode 54. The interlayer insulating film 55 is formed of, for example, an electrode 56 made of aluminum. -19- 200835996 Further, as the intermediate layer 5 which is provided to connect the peeling layer 12, other insulating films such as a tantalum nitride film may be used in addition to the tantalum oxide film. The intermediate layer 50 is a material formed for various purposes, for example, as a protective layer for physically or chemically protecting the thin film electronic device layer 4, an insulating layer, a light shielding layer for laser light, and migration prevention. Among the barrier layers and the functions of the reflective layer, 'at least one material is used. The thickness of the intermediate layer 50 is preferably determined in accordance with the degree of function of the function, etc., but it is preferably about 10 nm to 5 μm, and preferably about 40 nm to Ιμηη. When the thin film electronic device layer 4 is formed as described above, as the surface activation processing, as shown in FIG. 2, the surface of the thin film electronic device layer 4, that is, the surface of each thin film electronic device 5 is formed to have an organic The surface treatment layer 3 composed of a functional metal alkoxide. In the present embodiment, the surface activation treatment process for forming the surface treatment layer 3 includes a purification process, a connection process, and an electrostatic removal process. In the purification process, the surface of the first substrate 1 of the thin film electronic device layer 4 on which the thin film electronic device layer 4 is formed (the thin film electronic device arrangement surface) is formed, and the purification process is performed. As the purification treatment method, it is preferable to perform at least one of an oxygen plasma treatment process, a UV plasma treatment process, a corona treatment process, and an etching process. By performing the purification treatment as described above, the surface of the thin film electronic device 5 or the arrangement surface is provided, and for example, an organic substance as a foreign matter can be removed. Therefore, when the metal oxide alkoxide is attached to the surface of the thin film electronic device, it becomes -20-200835996 to make this adhere better. The joint processing project is the main project of the surface activation treatment project. Further, the "connection processing" is a physical treatment process for forming the surface activation layer 3. Further, the connection processing is performed on the surface of the thin film electronic device after the purification process, and the metal alkoxide is disposed. As the metal alkoxide, a metal alkoxide having the above-described organic functional group can be used. Among the metal alkoxides, a Si-based system containing Si as a metal, a Ti-based Ti-containing system, a Zi-containing Zi-based system, and an A1-containing A1-based system have high versatility and are on the resin substrate 2 as described above. It is preferable to make the adhesion of the thin film electronic device 5 to be more favorable. Further, since the metal alkoxide of the S i type has high reactivity, the reaction temperature is relatively low, and there is also a favorable point such as a high reaction rate, and more preferably, it is used for disposing such a metal alkoxide. The method for arranging (attaching) the surface of the thin film electronic device is not particularly limited. For example, the first substrate 1 on which the thin film electronic device layer 4 is formed may be used in a solution containing a metal alkoxide. a method of directly immersing (dip coating method), a method of applying a solution containing a metal alkoxide on a surface of the thin film electronic device (coating method), and a metal alkane on the surface of the thin film electronic device A method of vapor contact of an oxide (steam treatment method) or the like. Examples of the coating method include a spin coating method, a screen printing method, a dispensing method, an inkjet method, and a spray method. In addition, in the above-mentioned metal alkoxide, a solvent or a dispersion medium is used, and various kinds of modifiers are used to adjust the properties and state with respect to the adhesion level of 21 to 200835996. When the alkoxide is composed of a metal alkoxide as described above, the hydrolyzable group is bonded to the inorganic material film constituting the thin film electronic device 5 as described above, and is formed by metal alkoxide. After the drying treatment is carried out as necessary, the electrostatic discharge removal process is carried out by electrostatically removing the surface of the film formed of the metal alkoxide by the thin film electronic device. Next, as the substrate subsequent process, the surface active layer 3 formed in Fig. 2C is provided with a resin substrate 2, that is, a second substrate made of a grease, on the above-mentioned thin film electronic device 5). Here, the arrangement (joining) of the surface-activated resin substrate 2 is as follows, the organic bonding method of the coating agent and/or the adhesive material, and the direct bonding of the resin base without the organic bonding layer In the resin substrate 2, the organic thin layer is treated on the organic layer, that is, the thin film electronic device 5), and the material constituting the organic underlayer is placed on the surface activation layer 3 or After the resin is used, the resin substrate 2 is placed on the thin film electric film electronic device 5) via the organic adhesive layer, and the adhesive is applied to the surface of the adhesive or the adhesive material or the inner surface of the resin substrate 2. It is a film that is not particularly formed, and gold is strongly solidified. The film formed is removed. This arrangement, as is well known, is via the electronic device layer 4 (the use of the tree treatment layer 3 of the invention: a method of joining the square plates 2 via the bonding layers. Bonding to the surface active layer) 4 (the thin film electronic agent or the inner surface device layer 4 of the adhesive substrate 2 is defined by the thinning treatment layer 3, for example, -22-200835996 is a solution casting method or a melt extrusion method. Among them, especially the solution casting method It is preferable because the film thickness of the adhesive layer (adhesive material layer) can be more uniformly applied. When the organic adhesive layer is formed by a solution casting method, the material constituting the adhesive layer is dissolved in an appropriate one. A varnish is obtained by a solvent, and this is carried out by a reverse roll coating method, a gravure coating method, an air knife coating method, a blade coating method, a dip coating method, and a shower curtain method. A method such as a coating method, a die coating method, or a spin coating method is applied to the surface treatment layer 3 or the inner surface of the resin substrate 2. In such a method, the film thickness control is also easy. Look, reverse roll coating, gravure coating The mold coating method and the spin coating method are suitable. Further, when the resin substrate 2 is adhered to the thin film electronic device layer 4 (thin film electronic device 5) via such an organic adhesive layer, it is usually for removing the organic adhesive layer. The drying treatment is carried out by using a solvent in the interior. The drying treatment can be carried out, for example, by heating with a warm air, an inert gas heating furnace, an oven, etc. Further, if the curing agent can be first mixed with a material for forming an organic adhesive layer, It is also possible to directly cure the adhesive by heating or the like. In this method, as the resin substrate 2, a substrate which satisfies a desired function such as flexibility or heat resistance is prepared by using this. It is obtained that the thin film electronic device is bonded to the substrate 1 in accordance with a function designed in advance. Further, as a method of directly adhering the resin substrate 2 to the thin film electronic device layer 4 (thin film electronic device 5) without passing through the organic adhesive layer, The method of forming the aforementioned organic adhesive layer is also used. That is, the organic adhesive layer formed by the above method and hardened is directly used as Lipid-23-200835996 The substrate 2 (the second substrate made of resin of the present invention) is used. In this case, of course, the resin (adhesive or adhesive material) to be used is placed on the surface activation treatment. In the method, since the thickness of the obtained resin substrate 2 can be roughly determined by the thickness of the resin to be disposed (coated), it is particularly desirable in the case where the film thickness is thinned. In other words, for example, when the resin substrate 2 is intended to be a thin resin film, the resin film which is relatively difficult to handle is used as a resin substrate, and is adhered via an organic adhesive layer; The method of forming a film-form resin substrate 2 by applying a resin liquid and hardening it is much improved in productivity. Specifically, it depends on the nature and state of the resin to be used (solid content concentration or The thickness of the thin resin substrate 2 having a film thickness of about 0.1 to ΙΟμηι is formed by a uniform film thickness by a spin coating method. When the resin substrate 2' is disposed on the surface activation treatment layer 3 as described above, the metal alkoxide of the surface treatment layer 3 is formed, and the organic functional group is organic with the resin substrate 2 or the organic underlayer. The matrix reacts and becomes a strongly bonded state. Further, in particular, when the resin substrate 2 is formed by curing with a resin, it is possible to use a material containing various additives as necessary for the resin. For example, it can be: hardener, flame retardant, sputum agent, soft polymer, heat stabilizer, weather resistant stabilizer, aging preventive agent, leveling agent, antistatic agent, slip agent, anti-adhesive agent, anti-proof agent The mist, the slipper, the natural oil, the synthetic oil, the wax, the emulsion, the magnetic material, the dielectric property adjuster, the toughening agent, and the like are added in an appropriate manner in accordance with the nature and state of the resin substrate 2 to be required, from -24 to 200835996. Then, as a transfer project, the thin film electronic device layer 4 (thin film electronic device 5) side is peeled off from the first substrate 10 as shown in FIG. 2D, that is, by the thin film electronic device layer 4 (thin film electronic device 5). The side of the first substrate 10 is peeled off, and the thin film electronic device layer 4 (thin film electronic device 5) is transferred onto the resin substrate 2. As a method of peeling off the side of the first substrate, when the peeling layer 12 is not formed as described above, the back side of the first substrate 10 (the opposite side to the side on which the thin film electronic device layer 4 is formed) The side is boring, etching, or the like, and the method of cutting off the surface layer portion on the side of the thin film electronic device layer 4 (thin film electronic device 5) on which the first substrate 10 is formed is used, and the peeling layer 12 is formed. In this case, in order to cause peeling of the peeling layer 12, light is irradiated from the back side of the first substrate 10. Then, the irradiated light passes through the prefabricated substrate 11 (first substrate 10), and is then irradiated to the peeling layer 12. Thereby, in-layer peeling and/or interfacial peeling occurs in the peeling layer 12, and the bonding force is reduced or eliminated. The principle of occurrence of in-layer peeling and/or interfacial peeling in the peeling layer 12 is presumed to be caused by the ablation of the constituent material of the peeling layer 12 or the release of the gas contained in the peeling layer 12 Or, further, it is produced via a phase change of melting, evapotranspiration, or the like which is generated after the irradiation. Here, the ablation means that the fixing material that absorbs the irradiation light (the constituent material of the release layer 12) is photochemically or thermally excited to cut off the bonding of atoms or molecules on the surface or inside. The release is mainly manifested by a phenomenon in which the phase of the peeling layer 12 is changed, such as melting, evapotranspiration (gasification), and the like -25-200835996. Further, the above-mentioned phase change becomes a minute foaming state, and there is also a case where the bonding force is lowered. The peeling layer 1 2 is produced by in-layer peeling or interfacial peeling, or both of them, the composition of the peeled layer 12, or various other factors. One of the main causes is that: Conditions such as the type, wavelength, intensity, and depth of arrival of the light to be irradiated. As the light to be irradiated, if the peeling layer 12 is caused to cause in-layer peeling and/or peeling of the interface, any light is preferable, and examples thereof include X-ray, ultraviolet light, visible light, infrared light (hot wire), and thunder. Light, millimeter wave, microwave, electron beam, radiation (α line, /3 line, r line), etc. Among them, in particular, laser light is preferable in that the peeling (ablation) of the peeling layer 12 is easily generated. Examples of the laser device for generating the laser light include various gas lasers, solid lasers (semiconductor lasers), and the like, and excimer lasers, Nd-YAG lasers, and Ar lasers can be suitably used. C02 lasers, CO lasers, He-N e lasers, etc., especially excimer lasers are particularly desirable. Since the excimer laser emits high energy in a short wavelength range, the peeling layer 12 can be ablated in a very short period of time, so that the temperature rise of the resin substrate 2, the prefabricated substrate 1 and the like hardly occurs. Thereby, deterioration or damage can be prevented, and peeling can be performed in the peeling layer 12. When the first substrate 1 (preformed substrate 1 1) is peeled off from the side of the thin film electronic device layer 4 (thin film electronic device 5), the thin film electronic device layer 4 (thin film electronic device 5) side is removed as necessary. The layer 12 is peeled off. Specifically, it is removed by a method such as washing, uranium engraving, ashing, honing, or the like, or a combination of the methods of -26-200835996. Thereby, the thin film electronic device layer 4 (thin film electronic device 5) is transferred onto the resin substrate 2, whereby the thin film electronic device bonded substrate i as shown in Fig. 1 can be obtained. In such a manufacturing method, the resin substrate 2 is disposed on the thin film electronic device layer 4 (thin film electronic device 5) via the surface activation layer 3 composed of a metal alkoxide having an organic functional group. On the other hand, the thin film electronic device layer 4 (thin film electronic device 5) is bonded to the resin substrate 2 to be transferred. Therefore, the organic functional group of the metal alkoxide can be strongly bonded to the resin substrate 2 side as described above, and the water-decomposing base system is added. The thin film electronic device layer 4 (thin film electronic device 5) can be strongly bonded to the thin film electronic device layer 4 (thin film electronic device 5), and the thin film electronic device layer 4 (thin film electronic device 5) can be strongly bonded to the resin substrate 2. Therefore, for example, even if a large temperature change is applied, it is possible to prevent the thin film electronic device 5 from being peeled off from the resin substrate 2 due to the difference in the coefficient of linear expansion. Thereby, the thin film electronic device having high reliability can be bonded to the substrate 1. 4A to 4D and 5A to 5D are views showing other embodiments of the method of manufacturing the bonded substrate of the thin film electronic device of the present invention. This embodiment differs mainly from the embodiment shown in Figs. 2A to 2D, and is a transfer once in the previous embodiment. In this embodiment, the transfer is performed twice. . In this case, first, as shown in Fig. 4A, a thin film electronic device layer 4 (thin film electronic device 5) is formed on the prefabricated substrate 1 via the peeling layer 12. This project is the same as the one described in the previous embodiment. Next, as shown in FIG. 4B, the surface of the prefabricated substrate 11 on the side of the thin film electronic device layer 4 (thin film electronic device 5) is formed -27-200835996, via the adhesive layer 13 formed of an adhesive. The dummy transfer substrate 14 is joined. As the adhesive for forming the adhesive layer 13 , among the materials forming the organic underlayer described above, for example, a material which is easily dissolved in a solvent such as water can be suitably used. Further, the dummy transfer substrate 14 is not particularly limited, and various materials can be used. Specifically, the glass substrate, the resin substrate, and the like are not limited to inorganic materials and organic materials, and materials of various materials can be used. Then, as shown in Fig. 4C, the peeling occurs in the peeling layer 12, and the light is irradiated from the back side of the pre-formed substrate 1 1 in the same manner as in the previous embodiment, and this is irradiated to the peeling layer 1 2 . Thereby, energy is applied to the peeling layer 1 2 to cause ablation, and the peeling layer 1 2 causes the in-layer peeling and/or the interface peeling, and the peeling layer 12 can be peeled off as shown in FIG. 4D. . When the preformed substrate 1 is peeled off from the thin film electronic device layer 4 (thin film electronic device 5) side as described above, the peeling layer remaining on the thin film electronic device layer 4 (thin film electronic device 5) is removed as shown in Fig. 5A. 12. Specifically, it is removed by a method such as washing, etching, ashing, honing or the like, or a combination of these methods. Thereby, a structure in which the thin film electronic device layer 4 (thin film electronic device 5) is provided on the dummy transfer substrate 14 can be obtained. Then, in such a configuration, the dummy transfer substrate 14 and the adhesive layer 13 are the first substrate of the present invention formed by providing the thin film electronic device layer 4 (thin film electronic device 5). Next, as a surface activation treatment, as shown in FIG. 5B, -28-200835996 is formed on the inside of the thin film electronic device layer 4, that is, inside the respective thin film electronic devices 5, by metal alkane having an organic functional group. The surface treatment layer 3 composed of the object. The surface activation treatment for forming the surface treatment layer 3 can be carried out by a purification process, a connection process, and a static elimination process in the same manner as in the previous embodiment. The substrate is then processed as a substrate, as shown in FIG. 5C, via the formed surface activation layer 3, on the aforementioned thin film electronic device layer 4 (thin film electronic device 5), that is, the thin film electronic device layer 4 On the back side of the thin film electronic device 5, a resin substrate 2 (a second substrate made of resin) is disposed. Here, the arrangement (joining) of the resin substrate 2 on the surface activation layer 3 may be carried out by bonding an organic adhesive layer composed of an adhesive and/or an adhesive material as described above. And a method of directly following the resin substrate 2 without passing through the organic underlayer. Then, as a transfer process, the dummy transfer substrate 1 is peeled off from the side of the thin film electronic device layer 4 (thin film electronic device 5) by dissolving the adhesive layer 13 in a solvent such as water as shown in FIG. 5D. On the fourth side, the thin film electronic device layer 4 (thin film electronic device 5) is transferred onto the resin substrate 2. The right side is removed, and the dummy transfer substrate 14 is peeled off from the side of the thin film electronic device layer 4 (thin film electronic device 5), and the adhesive layer 13 remaining on the thin film electronic device layer 4 (thin film electronic device 5) is removed as necessary. Thereby, the thin film electronic device layer 4 (thin film electronic device 5) is transferred onto the resin substrate 2, whereby the thin film electronic device bonded substrate 1 as shown in Fig. i can be obtained. In the same manner as in the previous embodiment, the resin substrate 2 is disposed on the thin film electronic device layer 4 (thin film electronic device 5) via the surface activation layer 3, whereby The thin film electronic device layer 4 (thin film electronic device 5) is bonded to the resin substrate 2 and transferred. Therefore, as described above, the organic functional group of the metal alkoxide is strongly bonded to the resin substrate 2 side, and the water-splitting base is strongly bonded to the thin film electronic device layer 4 (thin film electronic device 5) side. Thereby, the thin film electronic device layer 4 (thin film electronic device 5) can be strongly bonded to the resin substrate 2. Therefore, for example, even if a large temperature change is applied, it is possible to prevent the film electronic device 5 from being peeled off from the resin substrate 2 due to the difference in linear expansion coefficient; thereby, a film having high reliability can be obtained. The electronic device bonds the substrate 1. In the manufacturing method of the present embodiment, the thin film electronic device 5 formed on the prefabricated substrate 1 is temporarily transferred onto the dummy transfer substrate 14 and then transferred to the resin substrate 2 (second substrate). Therefore, the thin film electronic device 5 bonded to the resin substrate 2 can be placed above and below, that is, the front side and the back side, and the upper and lower sides (surface side and back side) when they are formed on the prefabricated substrate 1 1 can be fitted. . Next, a display device as an example of the electronic device of the present invention will be described. Fig. 6 is a view showing a display device having an electrophoretic element as a display element. The display device 18 has an element substrate 20, a transparent substrate 21, and microcapsules 22 enclosing the electrophoretic dispersion liquid while being held between the substrates 20 and 21. The element substrate 20 is composed of the above-described thin film electronic device bonding substrate of the present invention. In addition, the element substrate 20 is disposed on the inner surface of the film-like or flexible resin substrate 20a made of a resin, and is disposed on the inner surface of the flexible resin substrate 20a via an insulating layer or the like (not shown). A driving element (switching element) 23 composed of a TFT (Thin Film Transistor). The pixel electrodes 24 are formed separately for these driving elements 23, and the element substrate 20 is configured as an active matrix substrate. The driving element 23 has a semiconductor film 25 provided on the intermediate layer (not shown), a gate electrode 27 provided on the semiconductor film 25 via the gate insulating film 26, and a connection to the foregoing A source region (not shown) of the semiconductor 25 has a source electrode 28 and a pixel electrode (drain electrode) 24 connected to a drain region (not shown) of the semiconductor 25. Further, on the gate electrode 27, an interlayer insulating film 29 is formed as in the case of covering the gate electrode 27. The source electrode 28 is electrically pulled out to the interlayer insulating film 29 by a contact hole 30 formed in the interlayer insulating film 29, and is formed on the contact hole 30. Further, the relay electrode 31 is formed on the interlayer insulating film 29 so as to be electrically connected to the contact hole 3 2 formed in the interlayer insulating film 29. Further, an interlayer insulating film 33 is formed so as to cover the relay electrode 31 and the source electrode 28. A pixel electrode 24 (dip electrode) is formed on the interlayer insulating film 33. The pixel electrode 24 is electrically pulled out through the contact hole 34, and is electrically connected to the relay electrode 31. The transparent substrate 21 includes a film-form flexible flexible substrate 2 1 a made of a transparent resin or the like, and an inner surface of the transparent flexible substrate 21a made of ITO or the like. A transparent common electrode 35 made of a material. The outer surface side of the transparent substrate 2 1 is a display surface (observation surface). -31 - 200835996 Here, as the material of the transparent flexible substrate 2 1 a, for example, polyethylene terephthalate (PET), polyether oxime (PES), acid ester (PC) can be used. . Between the element substrate 20 and the transparent substrate 2, the microcapsules 22 are disposed, in particular, on the pixel electrodes 24, whereby the microcapsules 22 form a display area of the display device. The microcapsule 2 2 was sealed with an electrophoretic dispersion as a material. All of the microcapsules 2 2 are formed to have a substantially diameter. The diameter is, for example, about 30 μm. The electrophoretic dispersion contains electrophoretic particles and a dispersion medium for dispersing the particles. As the liquid phase dispersion medium, various esters such as alcohol-soluble ethyl acetate or butyl acetate such as water, methanol alcohol, isopropanol, butanol, octanol or 2-methoxyethanol can be used; a ketone such as acetone, methyl ethyl ketone or methyl butyl ketone; an aliphatic carbonization such as pentane, hexane or octane; an alicyclic hydrocarbon such as cyclohexane or methylcyclohexane; benzene or toluene; Aromatic benzenes such as hexylbenzene, heptylbenzene, octylbenzene, nonylbenzene, nonylbenzene, alkylbenzene, dodecylbenzene, tridecylbenzene, tetradecylbenzene, etc. Group of hydrocarbons; halogenated hydrocarbons such as dichloromethane, chloroform chloride, 1,2-dichloroethane, carboxylates, various other oils, etc., alone or in a mixture of these Materials such as active agents. Further, the electrophoretic particles have organic or inorganic particles (high-molecular colloid) having a property of being moved by electrophoresis of a difference in a liquid phase dispersion medium. As the electrophoretic particles, for example, aniline ink, carbon black, suitable polycarb, the same liquid phase, and the same liquid phase; the isohydrogen type eleven long bond, the fourth or the boundary electron or titanium- 32- 200835996 Black pigments such as black, white pigments such as titanium dioxide, zinc oxide, and antimony trioxide; azo pigments such as monoazo, disazo, and polyazo; isoindolinone Yellow pigments such as yellow lead, yellow iron oxide, cadmium yellow, titanium yellow, strontium, etc.; azo pigments such as monoazo, disazo, polyazo, etc.; quinacridone red, chrome Red pigment such as chrome vermilion; blue pigment of Phthalocyanine blue, indanthrene blue, anthraquinone dye, indigo, ultramarine blue, cobalt blue, etc; Phthalocyanine One or two or more kinds of green pigments such as green). Further, in the display device of this example, the microcapsules 22 are sealed with two types of electrophoretic particles, one of which is negatively charged and the other of which is positively charged. As the electrophoretic particles of these two types, for example, titanium dioxide which is a white pigment and carbon black which is a black pigment can be used. Then, by using such two kinds of white and black electrophoretic particles, for example, in the case of display of characters or the like, characters or the like can be displayed by black electrophoretic particles, and the background can be displayed by white electrophoretic particles. Further, it is also preferable to use only one type of electrophoretic particles to move the common electrode 35 side or the pixel electrode 24 side. Further, these microcapsules 22 are fixed to the transparent substrate 2, for example, by the bonding agent 36 on the common electrode 35. On the one hand, these microcapsules 22 are fixed to the element substrate 20 on the pixel electrode 24, for example, by the two sides of the thin plate 37. With such a configuration, the microcapsules 22 are held between the element substrate 20 and the transparent substrate 21 to constitute the display device 18. -33 - 200835996 In the display device 18' having such a configuration, since the element substrate 20 including the thin film electronic device bonded substrate 1 is provided, the bonded substrate 1 has high reliability and the element substrate 20 is also provided. Because of the high reliability, the display device 18 itself has high reliability. Moreover, the electronic device of the present invention is not limited to the above-described electrophoretic display device using an electrophoretic element as an organic display device. A display device such as an EL display device, a liquid crystal display device, or an electrochromic device, and an electric optical device having these display devices as display means are also preferable. In addition, the case where the thin film electronic device is used as a memory element can be applied to various memory devices such as SRAM, a central processing unit (CPU), or a device having a personal authentication function such as a fingerprint sensor. And sensor device. According to the present invention, it is possible to ensure that a large number of thin film electronic devices containing an inorganic material film or a thin film circuit layer formed of these are bonded to each other with high adhesion force on the organic substrate, thereby preventing peeling and ensuring A method for manufacturing a thin-film electronic device bonded substrate, and providing an electronic device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing an example of a bonded substrate of a thin film electronic device according to the present invention. 2A to 2D are explanatory views of the manufacturing process of the bonded substrate of the thin film electronic device. -34- 200835996

Η爲薄膜電子裝置 ψ @薄膜電子裝置之槪略構成Η is a thin film electronic device ψ @膜电子装置's strategic composition

第4Α〜第4D圖爲薄膜電子裝置接合基板的其他製造 工程說明圖。 第5Α〜第5D圖爲薄膜電子裝置接合基板的其他製造 工程說明圖。 第6圖係作爲本發明的電子機器之一例的，顯示裝置 的槪略構成圖。 【主要元件符號說明】 1 :薄膜電子裝置接合基板 2 :樹脂基板 3 :表面活性化處理層 4:薄膜電子裝置層 5 :薄膜電子裝置 I 〇 :第1基板 II :預製基板 1 2 :剝離層 13 :接著層 1 4 :假轉印基板 1 8 :顯示裝置 20 :元件基板 2〇a :樹脂基板 2 1 :透明基板 -35- 200835996 2 1 a :透明可撓性基板 22 :微膠囊 2 3 :驅動元件 24 :像素電極 25 :半導體膜 26 :閘極絕緣膜 27 :閘極電極 2 8 :源極電極 29 :層間絕緣膜 3 〇 :接觸孔 3 1 :中繼電極 3 2 :接觸孔 3 3 :層間絕緣膜 3 4 :接觸孔 3 5 :共通電極 3 6 :結合劑 3 7 :兩面接著薄板 5 0 :中間層 5 1 :源極·汲極區域 5 2 :通道層 5 3 :閘極絕緣膜 5 4 :閘極電極 5 5 :層間絕緣膜 5 6 :電極 -36Fig. 4 to Fig. 4D are explanatory diagrams of other manufacturing engineering of the bonded substrate of the thin film electronic device. Fig. 5 to Fig. 5D are explanatory diagrams of other manufacturing engineering of the bonded substrate of the thin film electronic device. Fig. 6 is a schematic structural view of a display device as an example of an electronic apparatus of the present invention. [Description of main component symbols] 1 : Thin film electronic device bonding substrate 2 : Resin substrate 3 : Surface activation treatment layer 4 : Thin film electronic device layer 5 : Thin film electronic device I 第 : First substrate II : Prefabricated substrate 1 2 : Release layer 13 : Next layer 14 : dummy transfer substrate 18 : display device 20 : element substrate 2 〇 a : resin substrate 2 1 : transparent substrate - 35 - 200835996 2 1 a : transparent flexible substrate 22 : microcapsule 2 3 : drive element 24 : pixel electrode 25 : semiconductor film 26 : gate insulating film 27 : gate electrode 2 8 : source electrode 29 : interlayer insulating film 3 〇 : contact hole 3 1 : relay electrode 3 2 : contact hole 3 3: interlayer insulating film 3 4 : contact hole 3 5 : common electrode 3 6 : bonding agent 3 7 : both sides followed by thin plate 5 0 : intermediate layer 5 1 : source · drain region 5 2 : channel layer 5 3 : gate Insulating film 5 4 : gate electrode 5 5 : interlayer insulating film 5 6 : electrode - 36

Claims (1)

200835996 十、申請專利範圍 1·一種薄膜電子裝置接合基板的製造方法，其特徵爲 ，包含： 在第1基板上製作薄膜電子裝置的電子裝置製作工程 、和 在前述薄膜電子裝置表面形成金屬烷氧化物層的表面 活性化處理工程、和 經由前述金屬烷氧化物層，於前述薄膜電子裝置接著 第2基板的基板接著工程、和 從前述第1基板剝離前述薄膜電子裝置的剝離工程。 2 ·如申請專利範圍第1項所記載的薄膜電子裝置接合 基板的製造方法，其中， 前述金屬烷氧化物，係由Ti、Li、Si、Na、K、Mg、 Ca、 St、 Ba、 Al、 In、 Ge、 Bi、 Fe、 Cu、 Y、 Zr、以及 Ta 所構成的群中所選擇之至少一種的金屬烷氧基化合物。 3 ·如申請專利範圍第1項或第2項所記載的薄膜電子 裝置接合基板的製造方法，其中， 前述表面活性化處理工程，係包含： 將設置在前述薄膜電子裝置的第1基板的薄膜電子裝 置配設面，進行淨化處理的淨化工程、和 在前述淨化工程後的前述薄膜電子裝置配設面，配置 前述金屬烷氧化物的連結處理工程、和 在前述連結處理工程後的前述薄膜電子裝置配設面， 進行靜電除去處理的靜電除去工程。 -37- 200835996 4·如 基板的製 在目U 處理工程 淨化處理 5.如 裝置接合 在則 轉塗佈法 注法、噴 6·如 的薄膜電 接著工程 板。 7·如 的薄膜電 板，係藉 而形成。 8·如 的薄膜電 於前 製作工程 於預 於前 申S靑專利範圍第3項所記載的薄膜電子 造方法，其中， 述淨化工程’係進行氧電漿處理工程、 、电晕處理工程、蝕刻處理工程之中至 工程。 申請專利範圍第3項或第4項所記載的 基板的製造方法，其中， 述連結處理工程，係將前述金屬烷氧化 、蒸風處理法、浸漬式塗佈法、網版印 墨法、噴霧法之中至少一種的手法配置 申請專利範圍第1項至第5項中之任一 子裝置接合基板的製造方法，其中，在 ’係在前述薄膜電子裝置上接合樹脂製 申請專利範圍第1項至第5項中之任一 子裝置接合基板的製造方法，其中，前 由於前述薄膜電子裝置上塗佈樹脂液、 申請專利範圍第1項至第7項中之任_ 子裝置接合基板的製造方法，其中， 述第1基板上設置前述薄膜電子裝置的 爲包含： 製基板上形成剝離層的步驟、和 述剝離層上使複數的膜層積而形成前述 裝置接合 UV電漿 少一種的 薄膜電子 物，以旋 刷法、分 〇 項所記載 前述基板 的第2基 項所記載 述第2基 使其硬化 項所記載 電子裝置 薄膜電子 -38- 200835996 裝置的步驟。 9.如申請專利範圍第1項至第7項中之任一項所記載 的薄膜電子裝置接合基板的製造方法，其中， 前述電子裝置製作工程係包含： 於預製基板上形成剝離層的步驟、和 於前述剝離層上使複數的膜層積而形成前述薄膜電子 裝置的步驟、和 於前述預製基板的薄膜電子裝置形成面，經由接著劑 而使假轉印基板接合的步驟、和 藉由經過前述預製基板而對前述剝離層施加能量，使 前述剝離層與前述預製基板的界面、或是前述剝離層的層 內產生剝離，而將前述薄膜電子裝置轉印於前述假轉印基 板的步驟。 1 〇·如申請專利範圍第1項至第9項中之任一項所記 載的薄0吴電子裝置接合基板的製造方法，其中，前述電子 裝置製作工程，係將複數的前述薄膜電子裝置層積於前述 第1基板上。 1 1 ·如申請專利範圍第1項至第1 0項中之任〜項所記 載的薄膜電子裝置接合基板的製造方法，其中，前述薄膜 電子裝置爲薄膜電晶體。 12·—種電子機器，其特徵爲：包含有藉由申請專利 範圍第1項至第1 1項中之任一項所記載的製造方法而得 的薄膜電子裝置接合基板。 -39-200835996 X. Patent Application No. 1. A method for manufacturing a bonded substrate of a thin film electronic device, comprising: manufacturing an electronic device for fabricating a thin film electronic device on a first substrate, and forming a metal alkoxide on the surface of the thin film electronic device The surface activation treatment of the material layer, and the substrate subsequent engineering of the thin film electronic device followed by the second substrate via the metal alkoxide layer, and the peeling of the thin film electronic device from the first substrate. The method for producing a bonded substrate of a thin film electronic device according to the first aspect of the invention, wherein the metal alkoxide is Ti, Li, Si, Na, K, Mg, Ca, St, Ba, Al. A metal alkoxide compound selected from at least one selected from the group consisting of In, Ge, Bi, Fe, Cu, Y, Zr, and Ta. The method for producing a thin film electronic device bonded substrate according to the first or second aspect of the invention, wherein the surface activation processing includes: a film provided on a first substrate of the thin film electronic device a surface of the electronic device, a purification process for performing a purification process, and a surface of the thin film electronic device after the purification process, a connection process of the metal alkoxide, and the thin film electron after the connection process The device is equipped with a surface to perform electrostatic discharge removal of the static electricity removal process. -37- 200835996 4·If the substrate is manufactured, the process is cleaned. 5. If the device is joined, then the transfer method is applied, and the film is printed on the film. 7. The thin film board is formed by borrowing. 8. The film is electrically produced in the pre-production process in the film electronic manufacturing method described in item 3 of the patent application of the former application, wherein the purification engineering is performed on an oxygen plasma treatment project, a corona treatment project, Etching process engineering to engineering. The method for producing a substrate according to the third or fourth aspect of the invention, wherein the connection treatment process is a metal alkane oxidation, a steam treatment method, a dip coating method, a screen printing ink method, or a spray method. A method for manufacturing a bonded substrate of any one of the first to fifth aspects of the invention, wherein the method of bonding the resin to the thin film electronic device is the first item of the patent application scope The manufacturing method of the bonding substrate of any one of the sub-devices of the fifth aspect, wherein the resin substrate is coated on the thin film electronic device, and the bonding substrate of any one of the first to seventh aspects of the patent application is manufactured. In the method of providing the thin film electronic device on the first substrate, the method includes: a step of forming a release layer on the substrate; and a film in which a plurality of films are laminated on the release layer to form a film in which the device is bonded to a UV plasma. In the electronic material, the second substrate described in the second item of the substrate described in the spin-drying method and the branching item is used to cure the electronic device film electron-38-2 00835996 The steps of the device. The method of manufacturing a bonded electronic device bonded substrate according to any one of the preceding claims, wherein the electronic device manufacturing process includes: a step of forming a peeling layer on a prefabricated substrate, And a step of forming a plurality of films on the release layer to form the thin film electronic device, a step of forming a surface of the thin film electronic device on the pre-formed substrate, bonding the dummy transfer substrate via an adhesive, and The substrate is prefabricated to apply energy to the peeling layer, and the interface between the peeling layer and the pre-formed substrate or the layer of the peeling layer is peeled off, and the thin film electronic device is transferred to the dummy transfer substrate. The manufacturing method of the thin electronic device bonding substrate according to any one of the first to the ninth aspect of the invention, wherein the electronic device manufacturing process is a plurality of the thin film electronic device layers It is accumulated on the first substrate. The method for producing a thin film electronic device bonded substrate according to any one of the first to tenth aspects of the present invention, wherein the thin film electronic device is a thin film transistor. An electronic device comprising: a thin film electronic device bonded substrate obtained by the method according to any one of claims 1 to 11. -39-
TW096149442A 2006-12-21 2007-12-21 Manufacturing method for manufacturing thin-film electronic device connection substrate, and electronic apparatus TW200835996A (en)

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