TW200834978A

TW200834978A - Light-emitting diode and manufacturing method thereof

Info

Publication number: TW200834978A
Application number: TW96105849A
Authority: TW
Inventors: Kuo-Hui Yu; Yu-Cheng Yang; An-Ru Lin; Tsun-Kai Ko; Wei-Shou Chen; Yiwen Ku; Chengta Kuo
Original assignee: Epistar Corp
Priority date: 2007-02-15
Filing date: 2007-02-15
Publication date: 2008-08-16
Also published as: TWI395344B

Abstract

A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a metallic reflection layer, an epitaxy structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate. Therefore the light-emitting diode is achieved.

Description

200834978 九、發明說明：【發明所屬之技術領域】本發明係有關於一種發光二極體與其製造方法，特別是有關於可提升光取出率的發光二極體與其製造方法。【先前技術】發光二極體係由一種具有同質結構（Homostructure)、單異質結構（Single Heterostructure)、雙異質結構（Double Heterostructure ·，DH)、或是多重量子井（Multiple Quantum Well ; MQW)結構所堆疊而成的磊晶結構，其能自然放射出不同波長之光線的p-n接面二極體。由於發光二極體具有低耗電量、低發熱量、操作壽命長、财撞擊、體積小、反應速度快、以及可發出穩定波長的色光等良好光電特性，因此常應用於家電、儀表之指示燈、光電產品之應用光源、以及光電通訊領域。傳統的發光二極體係在一個基板（Substrate)，一個η型下包覆層，一個主動層、以及一個Ρ型上包覆層，藉由電流通過主動層的磊晶結構而發光，並藉由磊晶結構的各種不同組成來改變發光二極體發光波長。通常，對發光二極體元件而言，發光亮度的高低主要係取決於主動層之量子效率（Quantum Efficiency)和光取出效率（Light Extraction Efficiency)。主動層之量子效率愈高，則發光二極體之發光亮度隨之提高，主動層之量子效率一般主要係由磊晶的品質以及主動層之結構設計來增加其效率。另一方面，光取出效率愈高，發光二極體之發光 200834978 亮度也會增加’光取出效率的改善主要係致力於克服，主動層所發㈣光子中有大部分在發光二極體㈣内部全反射而造成光損失的現象。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting diode and a method of manufacturing the same, and more particularly to a light-emitting diode capable of improving light extraction rate and a method of manufacturing the same. [Prior Art] A light-emitting diode system consists of a structure having a homostructure, a single Heterostructure, a double heterostructure (DH), or a multiple quantum well (MQ). Stacked epitaxial structures that naturally emit pn junction diodes of different wavelengths of light. Since the light-emitting diode has good photoelectric characteristics such as low power consumption, low heat generation, long operating life, financial impact, small volume, fast reaction speed, and color light which can emit stable wavelength, it is often used for indications of household appliances and meters. The application of light sources for lamps and optoelectronic products, as well as the field of optoelectronic communication. The conventional light-emitting diode system is on a substrate (Substrate), an n-type lower cladding layer, an active layer, and a Ρ-type upper cladding layer, which emit light by current passing through the epitaxial structure of the active layer, and by The various compositions of the epitaxial structure change the wavelength of the light-emitting diode. Generally, for a light-emitting diode element, the luminance of the light-emitting diode mainly depends on the quantum efficiency of the active layer and the light extraction efficiency. The higher the quantum efficiency of the active layer, the higher the luminance of the light-emitting diode, and the quantum efficiency of the active layer is generally mainly due to the quality of the epitaxial layer and the structural design of the active layer to increase its efficiency. On the other hand, the higher the light extraction efficiency, the higher the brightness of the light-emitting diode 200834978. The improvement of the light extraction efficiency is mainly to overcome, and most of the photons emitted by the active layer are inside the light-emitting diode (4). Total reflection causes loss of light.

目月)才田《見的牙重增加發光二極體元件之光輸出的方法’係透過提高發光二極體之光取出率。增加發光二極體之光取出效率的方法大致有下列幾種。第_種係利用直接蝕刻發光二極體表面，來粗糙化表面，藉以達到提高發光二極體之光取出效率的效果。在表面糙化的方式中，通常係透過遮罩來保護表面之局部區域，再進行濕式或乾式蝕刻，來達到表面糙化的目的。但，表面糙化之方式，表面糙化的均勻度不佳。第二種則係利用蝕刻方式來改變發光二極體之外型。然而，第二種方式之製程較為繁複，因此製程良率不佳。【發明内容】因此，本發明之一方面係在於提供一種發光二極體與 _ 其製造方法，藉以提升發光二極體的光取出率，增進發光效率。根據本發明之實施例，此發光二極體至少包含永久基板、接合層、幾何圖案層、金層反射層、磊晶結構、第一電極及第二電極。永久基板具有相對的第一表面和第二表面’接合層係設於永久基板的第一表面上，幾何圖案層係設於接合層上，其中幾何圖案層具有一週期性結構。金屬反射層係設於接合層和幾何圖案層之間，蠢晶結構係設於幾何圖案層上，第一電極係形成於磊晶結構上，第二電極 200834978 係形成於永久基板的第二表面上。又’根據本發明之實施例，此發光二極體的製造方法，至少包含：提供成長基板；形成磊晶結構於成長基材上；形成幾何圖案層於磊晶結構上，其中幾何圖案層具有一週期性結構；形成金屬反射層於幾何圖案層上；形成接合層於金屬反射層上；形成永久基板於接合層上；移除成長基材，形成第一電極於磊晶結構上；以及形成第二電極於永久基板的表面上。又’根據本發明之實施例，上述之發光二極體的蟲晶結構係依序形成第一電性半導體層、主動層及第二電性半導體層，且第二電性半導體層的電性係相反於第一電性半導體層，其中第二電性半導體層具有一部分表面，而第二電極$成於第一電性半導體層的部分表面上，第一電極形成於第一電性半導體層的表面上。因此本發明之發光二極體係藉由幾何圖案層和金屬反射層來形成週期性結構的反射面，以反射不同角度的入射光’使發光二極體的發先集中由正向出光，因而可提升光取出率，進而增加發光效率。【實施方式】為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂’本說明書特舉較佳實施例，並配合所附圖式，作詳細說明如下：請參照第1A圖至第ip圖，其繪示依照本發明第一實施例之發光二極體的製程剖面圖。本實施例的發光二極體 200834978 100至少包含有磊晶結構層120、幾何圖案層130、金屬反射層140、接合層150、永久基板160、第一電極170及第二電極180。接合層150、金屬反射層14〇、幾何圖案層130 及磊晶結構層120係依序地堆疊於永久基板160上。第一電極170和第二電極180係分別形成於發光二極體1〇〇的 4 兩側，以形成垂直導通型結構。 • 請參照第1A圖，首先，提供成長基材110。此成長基材110例如為：砷化鎵（GaAs)、矽、碳化矽（SiC)、氮化鋁馨（A1N)基板、藍寶石、磷化銦或磷化鎵。接著，形成磊晶結構120於成長基材110之上，磊晶結構120係藉由一磊晶製程所形成，例如係有機金屬氣相沉積磊晶法（MOCVD)、液相磊晶法（LPE)或分子束磊晶法 (MBE)等磊晶製程。此磊晶結榛120具有第一電性半導體層 121、主動層122、第二電性半導體層123及第二電性接觸層124,來依序沉積於成長基材110之上，其中第一電性半導體層121的電性係不同於第二電性半導體層123。本實施例的第一電性和第二電性為不同電性。當第一電性為N型時，第二電性為P型；而當第一電性為P型時，第二電性則為N型。在本實施例中，第一電性半導體層121的材料例如為N型磷化鋁鎵銦[(McGauxyniAxXM]，主動層122例 _ 如係由磷化鋁鎵銦材質所形成的多重量子井結構，第二電性半導體層123的材料例如為P型磷化鋁鎵銦[(AlxGakyn^P， x>04]，第二電性接觸層124的材料可例如為氧化銦錫 (Indium Tin Oxide)、氧化銦（Indium Oxide)、氧化鍚（Tin Oxide)、氧化編錫（Cadmium Tin Oxide)、氧化鋅（Zinc 200834978 oxide)、氧化鎂（Magnesium oxide)或氮化鈦（册㈤腿馳仙幻等具有導電性及透光性的材料…另外，本實施例之義晶結構12G可例如係由：同質結構、單異質結構、雙異質結構、或是多重量子井結構所堆疊而成。請參照第1B圖和第2圖，第2圖係繪示依照本發明第 -實施例之發光二極體之金字塔形結構的侧視示意圖。接著，形成幾何圖案層13〇於蠢晶結構120上，其中幾何圖木層130具有週期性結構’其例如係由複數個金字塔形結構131所組成。此幾何圖案層13〇係沉積介電質材料或透明氧化材料於蠢晶結構120上，例如可為：氧化石夕⑻仏）、亂化矽（SiNx)、氧化鈦（Ti〇x)或氧化鋁（Α1〇χ)等氧化物。此些金字塔形結構131係分別相隔一預定間距地設置，以形成週期性結構131，而每一此些金字塔形結構131的底角角度Θ係實質小於90度。請參照第ic圖，接著，形成金屬反射層14〇於幾何圖案層130上，接著形成接合層15〇於金屬反射層14〇。金屬反射層140的材料可例如為：鋁、金、鉑、辞、銀、鎳、鍺、銦、錫或其合金等具有高反射率的金屬材質。而接合層150的材料可例如為：銀膠、自發性導電高分子或高分子中摻雜導電材質、鋁、金、鈾、辞、銀、鎳+ ^ 錫、鈦、鉛、銅、鈀或其合金，用以接合永久基板16〇，以進行一基板轉移（Substrate Transferring)動作。值得注意，由於金屬反射層140係形成於幾何圖案層13〇的週期性結構上，故金屬反射層14〇可形成週期性結構的反射面，並可反射不同角度的入射光。 200834978 請參照第ID圖，接著，形成永久基板160於接合層 150上。本實施例之永久基板160的材料係具有導電性，例如可為：磷砷化鎵(GaAsP)、磷化鋁鎵銦（AlGalnP)、珅化鋁鎵(AlGaAs)、磷化鎵（GaP)、矽或金屬材質。諝參照第1E圖，接著，移除成長基材110，因而裸露 Μ 出磊晶結構120之第一電性半導體層121的表面。成長基 * 材110例如係藉由雷射剝離技術、蝕刻製程或化學機械研磨製程來被移除。馨請參照第1F圖，接著，形成第一電性接觸層125於磊晶結構120的第一電性半導體層121上。第一電性接觸層 125的材料可例如為：氧化銦錫（Indium Tin Oxide)、氧化銦 (Indium Oxide)、氧化錫（Tin Oxide)、氧化編錫（Cadmium Tin Oxide)、氧化辞（Zinc oxide)、氧化鎮（1^&81^81\1111€^(16)或氮化鈦（Titanium Nitride)等具有導電性及透光性的材料。接著，利用熱蒸鍍（Thermal Evaporation)、電子束蒸鍍（E-beam) 或離子濺鍍（Sputtering)等方法，形成第一電極170於第一 _ 電性接觸層125上，並形成第二電極180於永久基板160 的裸露表面上，因而完成本實施的發光二極體100。其中第一電極170的材料可例如為：In、Al、Ti、Au、W、InSn、 TiN、WSi、Ptln2、Nd/Al、Ni/Si、Pd/A卜 Ta/A卜 Ti/Ag、 - Ta/Ag、Ti/Al、Ti/Au、Ti/TiN、Zr/ZrN、Au/Ge/Ni、Cr/Ni/Au、目目) 才田 "The method of increasing the light output of the light-emitting diode element by the tooth weight seen" improves the light extraction rate of the light-emitting diode. There are roughly the following methods for increasing the light extraction efficiency of the light-emitting diode. The first type uses a direct etching of the surface of the light-emitting diode to roughen the surface, thereby achieving an effect of improving the light extraction efficiency of the light-emitting diode. In the method of roughening the surface, a partial area of the surface is usually protected by a mask, and then wet or dry etching is performed to achieve surface roughening. However, the surface roughening method has a poor uniformity of surface roughening. The second method uses etching to change the appearance of the light-emitting diode. However, the process of the second method is complicated, and the process yield is not good. SUMMARY OF THE INVENTION Accordingly, it is an aspect of the present invention to provide a light emitting diode and a method of manufacturing the same, which can improve the light extraction rate of the light emitting diode and improve the light emitting efficiency. According to an embodiment of the invention, the light emitting diode comprises at least a permanent substrate, a bonding layer, a geometric pattern layer, a gold layer reflecting layer, an epitaxial structure, a first electrode and a second electrode. The permanent substrate has opposing first and second surfaces. The bonding layer is disposed on the first surface of the permanent substrate, and the geometric pattern layer is disposed on the bonding layer, wherein the geometric pattern layer has a periodic structure. The metal reflective layer is disposed between the bonding layer and the geometric pattern layer, the dormant structure is disposed on the geometric pattern layer, the first electrode is formed on the epitaxial structure, and the second electrode 200834978 is formed on the second surface of the permanent substrate. on. According to an embodiment of the present invention, the method for manufacturing the light emitting diode includes at least: providing a grown substrate; forming an epitaxial structure on the grown substrate; forming a geometric pattern layer on the epitaxial structure, wherein the geometric pattern layer has a periodic structure; forming a metal reflective layer on the geometric pattern layer; forming a bonding layer on the metal reflective layer; forming a permanent substrate on the bonding layer; removing the grown substrate to form the first electrode on the epitaxial structure; and forming The second electrode is on the surface of the permanent substrate. According to an embodiment of the present invention, the insect crystal structure of the above-mentioned light-emitting diode sequentially forms the first electrical semiconductor layer, the active layer and the second electrical semiconductor layer, and the electrical properties of the second electrical semiconductor layer Contrary to the first electrical semiconductor layer, wherein the second electrical semiconductor layer has a portion of the surface, and the second electrode $ is formed on a portion of the surface of the first electrical semiconductor layer, and the first electrode is formed on the first electrical semiconductor layer on the surface. Therefore, the light-emitting diode system of the present invention forms a reflective surface of a periodic structure by a geometric pattern layer and a metal reflective layer to reflect incident light of different angles, so that the emission of the light-emitting diode is concentrated from the forward direction, thereby Increase the light extraction rate, thereby increasing the luminous efficiency. The above and other objects, features, and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; To the ip diagram, a process sectional view of the light emitting diode according to the first embodiment of the present invention is shown. The light-emitting diode 200834978 100 of the present embodiment includes at least an epitaxial structure layer 120, a geometric pattern layer 130, a metal reflective layer 140, a bonding layer 150, a permanent substrate 160, a first electrode 170, and a second electrode 180. The bonding layer 150, the metal reflective layer 14A, the geometric pattern layer 130, and the epitaxial structure layer 120 are sequentially stacked on the permanent substrate 160. The first electrode 170 and the second electrode 180 are respectively formed on both sides of the light-emitting diode 1 4 to form a vertical conduction type structure. • Referring to FIG. 1A, first, a growth substrate 110 is provided. The growth substrate 110 is, for example, gallium arsenide (GaAs), germanium, tantalum carbide (SiC), aluminum nitride (A1N) substrate, sapphire, indium phosphide or gallium phosphide. Next, an epitaxial structure 120 is formed on the growth substrate 110, and the epitaxial structure 120 is formed by an epitaxial process, such as an organometallic vapor deposition epitaxy (MOCVD) or a liquid phase epitaxy (LPE). Or an epitaxial process such as molecular beam epitaxy (MBE). The epitaxial germanium 120 has a first electrical semiconductor layer 121, an active layer 122, a second electrical semiconductor layer 123, and a second electrical contact layer 124, which are sequentially deposited on the growth substrate 110, wherein the first The electrical conductivity of the electrical semiconductor layer 121 is different from that of the second electrical semiconductor layer 123. The first electrical property and the second electrical property of this embodiment are different electrical properties. When the first electrical property is N-type, the second electrical property is P-type; and when the first electrical property is P-type, the second electrical property is N-type. In this embodiment, the material of the first electrical semiconductor layer 121 is, for example, N-type aluminum gallium indium phosphide [(McGauxyniAxXM], active layer 122 cases - such as a multi-quantum well structure formed of aluminum gallium phosphide) The material of the second electrical semiconductor layer 123 is, for example, P-type aluminum gallium indium phosphide [(AlxGakyn^P, x>04], and the material of the second electrical contact layer 124 may be, for example, indium tin oxide (Indium Tin Oxide). Indium Oxide, Tin Oxide, Cadmium Tin Oxide, Zinc Oxide (Zinc 200834978 oxide), Magnesium Oxide or Titanium Nitride (Volume 5) A material having conductivity and light transmittance. In addition, the crystal structure 12G of the present embodiment may be, for example, a homogenous structure, a single hetero structure, a double hetero structure, or a multiple quantum well structure. 1B and 2, and Fig. 2 is a side elevational view showing a pyramidal structure of a light-emitting diode according to a first embodiment of the present invention. Next, a geometric pattern layer 13 is formed on the dummy crystal structure 120, wherein The geometric map layer 130 has a periodic structure 'for example The geometric pattern layer 13 is formed by depositing a dielectric material or a transparent oxidized material on the stray structure 120, for example, oxidized stone (8) 、, 乱矽 (SiNx) An oxide such as titanium oxide (Ti〇x) or aluminum oxide (Α1〇χ), wherein the pyramidal structures 131 are respectively disposed at a predetermined interval to form a periodic structure 131, and each of the pyramidal structures The base angle Θ of the 131 is substantially less than 90 degrees. Referring to the ic diagram, next, the metal reflective layer 14 is formed on the geometric pattern layer 130, and then the bonding layer 15 is formed on the metal reflective layer 14A. The metal reflective layer 140 The material of the bonding layer 150 can be, for example, aluminum, gold, platinum, rhodium, silver, nickel, ruthenium, indium, tin or alloys thereof, and the material of the bonding layer 150 can be, for example, silver paste, spontaneity. The conductive polymer or polymer is doped with a conductive material, aluminum, gold, uranium, rhodium, silver, nickel + ^ tin, titanium, lead, copper, palladium or an alloy thereof for bonding the permanent substrate 16 进行 to perform a substrate Substrate Transferring action. It should be noted that since the metal reflective layer 140 is formed on the periodic structure of the geometric pattern layer 13〇, the metal reflective layer 14〇 can form a reflective surface of a periodic structure and can reflect incident light of different angles. ID diagram, next, a permanent substrate 160 is formed on the bonding layer 150. The material of the permanent substrate 160 of the present embodiment is electrically conductive, and may be, for example, gallium arsenide (GaAsP), aluminum gallium indium phosphide (AlGalnP), Aluminum gallium (AlGaAs), gallium phosphide (GaP), tantalum or metal. Referring to Fig. 1E, the growth substrate 110 is removed, thereby exposing the surface of the first electrical semiconductor layer 121 of the epitaxial structure 120. The growth substrate 110 is removed, for example, by a laser lift-off technique, an etching process, or a chemical mechanical polishing process. Referring to FIG. 1F, a first electrical contact layer 125 is formed on the first electrical semiconductor layer 121 of the epitaxial structure 120. The material of the first electrical contact layer 125 can be, for example, Indium Tin Oxide, Indium Oxide, Tin Oxide, Cadmium Tin Oxide, Zinc oxide. And oxidized town (1^&81^81\1111€^(16) or titanium nitride (Titanium Nitride), etc., which have electrical conductivity and light transmissivity. Next, using thermal evaporation (Electrical Evaporation), electrons a method of beam evaporation (E-beam) or ion sputtering to form the first electrode 170 on the first electrical contact layer 125 and form the second electrode 180 on the exposed surface of the permanent substrate 160, thereby The light emitting diode 100 of the present embodiment is completed, wherein the material of the first electrode 170 can be, for example, In, Al, Ti, Au, W, InSn, TiN, WSi, Ptln2, Nd/Al, Ni/Si, Pd/A.卜Ta/A, Ti/Ag, - Ta/Ag, Ti/Al, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, Cr/Ni/Au,

Ni/Cr/Au、Ti/Pd/Au、Ti/Pt/Au、Ti/Al/Ni/Au Au/Si/Ti/Au/Si、Au/Ni/Ti/Si/Ti 或其合金材料。而第二電極 180 的材料可例如為：Ni/Au、NiO/Au、Pd/Ag/Au/Ti/Au、 Pt/Ru、Ti/Pt/Au、Pd/Ni、Ni/Pd/Au、Pt/Ni/Au、Ru/Au、Nb/An、 11 200834978Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or alloy materials thereof. The material of the second electrode 180 may be, for example, Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/Ru, Ti/Pt/Au, Pd/Ni, Ni/Pd/Au, Pt. /Ni/Au, Ru/Au, Nb/An, 11 200834978

Co/Au、Pt/Ni/Au、Ni/Pt、Niln 、Pt3ln7 或其合金材料。因此，本實施的發光二極體100係藉由幾何圖案層130 和金屬反射層140來形成週期性結構的反射面，因而可反射不同角度的入射光，使由磊晶結構120所發出的光線在經由金屬反射層140的反射後可有效地正向出光，進而提 Λ 升發光二極體100的光取出率，增加發光二極體100的發 Λ 光效率。請參照第3Α和3Β圖，其繪示依照本發明之第二實施 # 例之發光二極體的製程剖面圖。以下僅就本實施例與第一實施例之相異處進行說明，關於相似處在此不再贅述。相較於第一實施例的第1Ε和1F圖，第二實施例之發光二極體300至少包含有磊晶結構層320、幾何圖案層330、金屬反射層340、接合層350、永久基板360、第一電極370、第二電極380及絕緣保護層390。接合層350、金屬反射層 340、幾何圖案層330及磊晶結構層320係依序地堆疊於永久基板360上，其中磊晶結構層320具有第一電性半導體 _ 層321、主動層322、第二電性半導體層323、第二電性揍觸層324及第一電性接觸層325,且第二電性半導體層323 暴露出一部分表面323a。第一電極370係形成第一電性接觸層325上，而第二電極380係形成於第二電性半導體層 - 323的部分表面323a，且永久基板360的材質為不導電或導電，因而形成橫向導通型結構。如第3A和3B圖所示，在移除成長基材310和形成第一電性接觸層325後，接著，利用乾式蝕刻、濕式蝕刻或機械切割研磨來移除部分第一電性半導體層321和部分主 12 200834978 動層322,以暴露出第二電性半導制奶的部分表面 3仏。接著，形成第一電極37〇於第一電性接觸層325上，並形成第1極38G於第二電性半㈣層⑵的部分表面Co/Au, Pt/Ni/Au, Ni/Pt, Niln, Pt3ln7 or alloy materials thereof. Therefore, the light-emitting diode 100 of the present embodiment forms a reflective surface of a periodic structure by the geometric pattern layer 130 and the metal reflective layer 140, thereby reflecting incident light of different angles and causing light emitted by the epitaxial structure 120. After the reflection through the metal reflective layer 140, the light can be efficiently emitted in the forward direction, thereby improving the light extraction rate of the light-emitting diode 100 and increasing the light-emitting efficiency of the light-emitting diode 100. Referring to Figures 3 and 3, there are shown process cross-sectional views of a light-emitting diode according to a second embodiment of the present invention. Only the differences between the embodiment and the first embodiment will be described below, and the similarities are not described herein again. The light emitting diode 300 of the second embodiment includes at least an epitaxial structure layer 320, a geometric pattern layer 330, a metal reflective layer 340, a bonding layer 350, and a permanent substrate 360, as compared to the first and first F1 of the first embodiment. The first electrode 370, the second electrode 380, and the insulating protective layer 390. The bonding layer 350, the metal reflective layer 340, the geometric pattern layer 330, and the epitaxial structure layer 320 are sequentially stacked on the permanent substrate 360, wherein the epitaxial structure layer 320 has a first electrical semiconductor layer 321 and an active layer 322. The second electrical semiconductor layer 323, the second electrical contact layer 324, and the first electrical contact layer 325, and the second electrical semiconductor layer 323 exposes a portion of the surface 323a. The first electrode 370 is formed on the first electrical contact layer 325, and the second electrode 380 is formed on the partial surface 323a of the second electrical semiconductor layer 323, and the material of the permanent substrate 360 is non-conductive or conductive, thus forming Lateral conduction structure. As shown in FIGS. 3A and 3B, after the growth substrate 310 is removed and the first electrical contact layer 325 is formed, then a portion of the first electrical semiconductor layer is removed by dry etching, wet etching, or mechanical cutting. 321 and a portion of the main 12 200834978 moving layer 322 to expose a portion of the surface of the second electrically conductive semi-conductive milk. Next, the first electrode 37 is formed on the first electrical contact layer 325, and a part of the surface of the first electrode 38G on the second electrical half (four) layer (2) is formed.

:上，形成橫向導通型結構。接著形成絕緣保護層 3-9〇於弟-電性接觸層325和第二電性半導體層323所未覆盍的表面上，以封裝保護元件，絕緣保護層的材料例如可為·含石夕的氧化物、氮化物或高介電有機材料，因而完成本實施例的發光二極體3〇〇。因此，第二實施例的發光一極體_可藉由幾何圖案層330和金屬反射層34〇來提升光取出率，增加發光效率。 —由上述本發明之貫施例可知，本發明之發光二極體係藉由幾何圖案層和金屬反射層來形成週期性結構的反射面，以反射不㈣度的人射絲集中正向出光，因而可提升光取出率，進而增加發光效率。限2本發明，任何熟習此技藝者，在不脫離本發明之精神 ^靶圍内，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。雖然本發明已以較佳實施例揭露如上，然其並非用以【圖式簡單說明】為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之詳細說明如下：第1A圖至第ip圖係繪示根據本發明之第一實施例之發光二極體的製程剖面圖。第2圖係繪示根據本發明之第一實施例之發光二極體 13 200834978 之金字塔形結構的側視不意圖。第3A圖和第3B圖係繪示根據本發明之第二實施例之發光二極體的製程剖面圖。【主要元件符號說明】: Upper, forming a lateral conduction type structure. Then, the insulating protective layer 3-9 is formed on the uncovered surface of the second electrical semiconductor layer 325 and the second electrical semiconductor layer 323 to encapsulate the protective component, and the material of the insulating protective layer may be, for example, The oxide, nitride or high dielectric organic material thus completes the light-emitting diode 3 of the present embodiment. Therefore, the light-emitting body of the second embodiment can increase the light extraction rate by the geometric pattern layer 330 and the metal reflective layer 34, thereby increasing the light-emitting efficiency. - It can be seen from the above embodiments of the present invention that the light-emitting diode system of the present invention forms a reflective surface of a periodic structure by a geometric pattern layer and a metal reflective layer, so as to reflect a positive direct light emission of a human filament that is not (four) degrees. Therefore, the light extraction rate can be increased, thereby increasing the luminous efficiency. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; quasi. The above and other objects, features, advantages and embodiments of the present invention will become more apparent from the embodiments of the invention. The detailed description is as follows: FIGS. 1A to ip are cross-sectional views showing a process of a light-emitting diode according to a first embodiment of the present invention. Fig. 2 is a side view showing the pyramidal structure of the light-emitting diode 13 200834978 according to the first embodiment of the present invention. 3A and 3B are cross-sectional views showing the process of a light-emitting diode according to a second embodiment of the present invention. [Main component symbol description]

Θ ·· 底角角度 100 發光二極體 110 :成長基材 120 蠢晶結構 121 第一電性半導體層 122 :主動層 123 第二電性半導體層 124 第二電性接觸層 125:第一電性接觸層 130 幾何圖案層 131 :金字塔形結構 140 金屬反射層 15 0 :接合層 160 永久基板 170 :第一電極 180 第二電極 300 發光二極體 310 :成長基材 320 磊晶結構 321 第一電性半導體層 322 :主動層 323 第二電性半導體層 323a :部分表面 324 第二電性接觸層 325:第一電性接觸層 330 幾何圖案層 340 :金屬反射層 350 接合層 360 :永久基板 370 第一電極 380 :第二電極 390 絕緣保護層Θ ·· bottom angle angle 100 light-emitting diode 110: growth substrate 120 dormant structure 121 first electrical semiconductor layer 122: active layer 123 second electrical semiconductor layer 124 second electrical contact layer 125: first electricity Contact layer 130 geometric pattern layer 131: pyramid structure 140 metal reflective layer 15 0 : bonding layer 160 permanent substrate 170 : first electrode 180 second electrode 300 light emitting diode 310 : growth substrate 320 epitaxial structure 321 first Electrical semiconductor layer 322: active layer 323 second electrical semiconductor layer 323a: partial surface 324 second electrical contact layer 325: first electrical contact layer 330 geometric pattern layer 340: metal reflective layer 350 bonding layer 360: permanent substrate 370 first electrode 380: second electrode 390 insulating protective layer

Claims

200834978 X. Patent Application Range: 1. A light-emitting diode comprising at least: a permanent substrate having a first surface and a second surface; a bonding layer disposed on the first surface of the permanent substrate a geometric pattern layer disposed on the bonding layer, wherein the geometric pattern layer has a periodic structure; a metal reflective layer disposed between the bonding layer and the geometric pattern layer; a silly structure disposed on the layer a geometric pattern layer; a first electrode formed on the epitaxial structure; and a second electrode formed on the second surface of the permanent substrate. 2. The light-emitting diode according to claim 1, wherein the material of the growth substrate is selected from the group consisting of gallium antimonide (GaAs), shixi, carbonized stone (ye), aluminum nitride (A1N) substrate. , a group of sapphire, indium phosphide and gallium phosphide. The light-emitting diode according to the first aspect of the invention, wherein the epitaxial structure is provided with a second electrical semiconductor layer, an active layer and a first electrical semiconductor layer, which are sequentially formed on the layer On the geometric pattern layer, the electrical properties of the second electrical semiconductor layer are opposite to the first electrical semiconductor layer. 4. The light-emitting diode according to claim 3, wherein the stray structure further comprises a -first electrical contact layer and a - electrical contact layer, /, the electrical contact layer The first electrode and the first electrical half 15 200834978 conductor layer are disposed between the geometric pattern layer and the second electrical semiconductor layer. 5. The light-emitting diode of claim 4, wherein the material of the second electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), and tin oxide (Tin). Oxide), Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. 6. The light-emitting diode according to claim 4, wherein the material of the first electrical contact layer is selected from the group consisting of Indium Tin Oxide, Indium Oxide, and Tin Oxide (Tin). Oxide), Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. 7. The light-emitting diode of claim 1, wherein the geometrical layer is provided with a plurality of pyramidal structures, and each of the pyramidal structures has a base angle of less than 90 degrees. 8. The light-emitting diode according to claim 1, wherein the material of the permanent substrate is electrically conductive. 9. The light-emitting diode according to claim 1, wherein the material of the 16 200834978 permanent substrate is selected from the group consisting of phosphorus gallium arsenide (GaAsP), aluminum gallium indium phosphide (AlGalnP), and aluminum gallium arsenide (八1〇8 8 8), a group of gallium phosphide (0&?), tantalum and metal materials. 10. The light-emitting diode according to claim 1, wherein the material of the geometric pattern layer is selected from the group consisting of yttrium oxide (SiOx), tantalum nitride (SiNx), titanium oxide (TiOx), and oxidation. A group of aluminum (AlOx). The light-emitting diode according to claim 1, wherein the material of the metal reflective layer is selected from the group consisting of: ingot, gold, surface, zinc, silver, nickel, bismuth, indium, tin and alloys thereof. One group. 12. The light-emitting diode according to claim 1, wherein the material of the bonding layer is selected from the group consisting of silver rubber, spontaneous conductive polymer or polymer doped conductive material, Ming, Jin, Shi, Zinc A group of silver, nickel, antimony, indium, tin, titanium, lead, copper, or alloys thereof. 13. The light-emitting diode according to claim 1, wherein the material of the first electrode is selected from the group consisting of In, A, Ti, Au, W, InSn, TiN, WSi, Ptln2, Nd/Al, Ni. /Si, Pd/Al·, Ta/Al, Ti/Ag, . Ta/Ag, Ti/A, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, Cr/Ni/Au, • Composition of Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or alloys thereof One group. 14. The light-emitting diode according to claim 1, wherein 17 200834978 the material of the second electrode is selected from the group consisting of Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/Ru , Ti/Pt/Au, Pd/Ni, Ni/Pd/Au, Pt/Ni/Au, Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, Niln, Pt3ln7 and A group of alloys. 15. A method of fabricating a light-emitting diode, comprising: at least: providing a growth substrate; forming a silo structure on the growth substrate, and forming a geometric pattern layer on the epitaxial structure, wherein the geometry The patterned layer has a periodic structure; forming a metal reflective layer on the geometric pattern layer; forming a bonding layer on the metal reflective layer; forming a permanent substrate on the bonding layer; removing the grown substrate to form a The first electrode is on the dormant structure, and a second electrode is formed on the surface of the permanent substrate. The method for manufacturing a light-emitting diode according to claim 15, wherein the material of the growth substrate is selected from the group consisting of gallium arsenide (GaAs), germanium, tantalum carbide (SiC), and aluminum nitride (A1N). A group consisting of a substrate, sapphire, molybdenum phosphide, and gallium phosphide. The method for manufacturing a light-emitting diode according to claim 15, wherein the epitaxial structure is provided with a second electrical semiconductor layer, an active layer and a first electrical semiconductor layer, which are sequentially formed. The geometric pattern layer 18 200834978 is electrically opposite to the first electrical semiconductor layer. 18. The method of fabricating a light-emitting diode according to claim 17, wherein the dormant structure further comprises a first electrical contact layer and a second electrical contact layer, wherein the first electrical contact The layer is disposed between the first electrode and the first electrical semiconductor layer, and the second electrical contact layer is disposed between the geometric pattern layer and the second electrical semiconductor layer.

19. The method of manufacturing a light-emitting diode according to claim 18, wherein the material of the first electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), A group consisting of Tin Oxide, Cadmium Tin Oxide, Zinc Oxide, Magnesium Oxide, and Titanium Nitride. 20. The method of fabricating a light-emitting diode according to claim 18, wherein the material of the first electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), oxidation. A group consisting of Tin Oxide, Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. The method for manufacturing a light-emitting diode according to claim 15, wherein the geometric pattern layer is provided with a plurality of pyramid-shaped structures, and the angle of the bottom angle of the pyramid-shaped structures is substantially less than every 19 200834978 9 degrees. The method of manufacturing a light-emitting diode according to claim 15, wherein the material of the permanent substrate is electrically conductive. The method for manufacturing a light-emitting diode according to claim 15, wherein the material of the permanent substrate is selected from the group consisting of phosphorus gallium arsenide (GaAsP), filled with gallium indium (AlGalnP), and aluminum gallium arsenide. A group of (A1GaAs), gallium phosphide (GaP), tantalum and metal materials. The method of manufacturing the light-emitting diode according to claim 15, wherein the material of the geometric pattern layer is selected from the group consisting of yttrium oxide (Si0x), tantalum nitride (SiNx), and titanium oxide (Ti〇x). And a group of alumina (Α1〇χ). The method for producing a light-emitting diode according to claim 15, wherein the material of the metal reflective layer is selected from the group consisting of aluminum, gold, platinum 'zinc, silver, nickel, bismuth, indium, tin and alloys thereof. One of the groups that make up. The method of manufacturing the precursor according to claim 15, wherein the material of the bonding layer is selected from the group consisting of silver rubber, spontaneous conductive polymer or polymer doped conductive material, aluminum, Gold, platinum, zinc 'silver, nickel 1 sin, tin, titanium, copper, or a group of alloys. The method of manufacturing a light-emitting diode according to claim 15, wherein the material of the first electrode is selected from the group consisting of In, A, Ti, An, W, InSn, TiN, WSi, Ptln2, Nd/ Al, Ni/Si, Pd/A, Ta/A, Ti/Ag, Ta/Ag, Ti/A, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, Cr/Ni/Au, Composition of Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or alloys thereof One group. 28. The method of producing a light-emitting diode according to claim 15, wherein the material of the second electrode is selected from the group consisting of Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/ Ru, Ti/Pt/Au, Pd/Ni, Ni/Pd/Au, Pt/Ni/Au, Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, Niln, Pt3ln7 and A group of alloys. 29. A light-emitting diode comprising: at least: a permanent substrate; a bonding layer disposed on the permanent substrate; a geometric pattern layer disposed on the bonding layer, wherein the geometric pattern layer has a periodic structure; a metal reflective layer is disposed between the bonding layer and the geometric pattern layer; an epitaxial structure is disposed on the geometric pattern layer, wherein the epitaxial structure comprises at least: a second electrical semiconductor layer disposed on the a plurality of surfaces are exposed on the geometric pattern layer; an active layer is disposed on the second electrical semiconductor layer; and a first electrical semiconductor layer is disposed on the active layer, wherein the second electrical semiconductor layer The electrical system is opposite to the first electrical semiconductor 21 200834978 layer; a second electrode is disposed on the portion of the surface of the second electrical semiconductor layer; and a first electrode is disposed on the first electrical semiconductor On the floor. 30. The light-emitting diode according to claim 29, wherein the material of the growth substrate is selected from the group consisting of gallium arsenide (GaAs), germanium, tantalum carbide (SiC), and aluminum nitride (A1N) substrates. , a group of sapphire, indium phosphide and gallium phosphide. The light-emitting diode of claim 29, wherein the epitaxial structure further comprises: a first electrical contact layer disposed between the first electrode and the first electrical semiconductor layer And a second electrical contact layer disposed between the geometric pattern layer and the second electrical semiconductor layer. The light-emitting diode according to claim 31, wherein the material of the first electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), and tin oxide ( Tin Oxide), oxidation. Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. 33. The light-emitting diode according to claim 31, wherein 22 200834978 the material of the first electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), and tin oxide. (Tin Oxide), Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. The light-emitting diode of claim 29, wherein the geometric pattern layer is provided with a plurality of pyramid-shaped structures, and each of the pyramid-shaped structures has a base angle of less than 90 degrees. The light-emitting diode according to claim 29, wherein the material of the permanent substrate is electrically conductive. The light-emitting diode according to claim 29, wherein the material of the permanent substrate is not electrically conductive. 37. The light-emitting diode according to claim 29, wherein the material of the permanent substrate is selected from the group consisting of gallium antimonide (GaAsP), aluminum gallium indium phosphide (AlGalnP), and aluminum gallium telluride (AlGaAs). A group of gallium phosphide (〇8?), tantalum and metal materials. 38. The light-emitting diode according to claim 29, wherein the material of the geometric pattern layer is selected from the group consisting of yttrium oxide (SiOx), tantalum nitride (SiNx), titanium oxide (TiOx), and aluminum oxide (AlOx). ) is a group of people. The light-emitting diode according to claim 29, wherein the material of the metal reflective layer is selected from the group consisting of: Ming, Jin, Gu, Zinc, Silver, Nickel, Yttrium, Indium, Tin and alloys thereof. Form a group of people. 40. The light-emitting diode according to claim 29, wherein the material of the bonding layer is selected from the group consisting of silver rubber, spontaneous conductive polymer or polymer doped conductive material, Ming, Jin, Gu, and A group of silver, nickel, antimony, indium, tin, antimony, lead, copper, palladium or alloys thereof. The light-emitting diode according to claim 29, wherein the material of the first electrode is selected from the group consisting of In, Al·, Ti, An, W, InSn, TiN, WSi, Ptliu, Nd/A Ni/Si, Pd/Al·, Ta/A, Ti/Ag, Ta/Ag, Ti/A, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, Cr/Ni/Au, Ni /Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or alloys thereof a group of people. The light-emitting diode according to claim 29, wherein the material of the second electrode is selected from the group consisting of Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/Ru, Ti /Pt/Au, Pd/Ni V Ni/Pd/Au, Pt/Ni/Au, Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, Niln, Pt3ln7 and their alloys Form a group of people. The light-emitting diode of claim 29, further comprising: an insulating protective layer formed on the first electrical contact layer and the second electrical layer 24200834978 semiconductor layer On the surface. 44. The luminescent diode of claim 43, wherein the insulating protective layer is selected from the group consisting of cerium-containing oxides, nitrides, and high dielectric organic materials. The method for manufacturing a light-emitting diode includes at least: providing a growth substrate; forming an epitaxial structure on the growth substrate, wherein the epitaxial structure T-order forms a first electrical semiconductor layer, An active layer and a second electrical semiconductor layer ′ and the irth electrical semiconductor (four) electrical system is opposite to the first electrical semiconductor layer; an open/formed pattern layer on the stray crystal structure, wherein the geometric pattern The layer has a periodic structure; forming a metal reflective layer on the geometric pattern layer; forming a bonding layer on the metal reflective layer; forming a permanent substrate on the bonding layer; removing the grown substrate; a first electrically conductive semiconductor layer and a portion of the active layer, forming a second electrode on a portion of the surface of the second electrically conductive semiconductor layer on a portion of the surface of the second electrically conductive semiconductor layer; and forming a first An electrode is on a surface of the first electrical semiconductor layer. 46. The method of manufacturing a light-emitting diode according to claim 45, wherein the material of the growth substrate is selected from the group consisting of gallium arsenide (GaAs), germanium, tantalum carbide (SiC), aluminum nitride ( A1N) A group consisting of a substrate, sapphire, indium phosphide, and gallium phosphide. 47. The method of manufacturing a light-emitting diode according to claim 45, wherein the epitaxial structure further comprises: • a first electrical contact layer disposed on the first electrode and the first electrode Between the semiconductor layers; and a second electrical contact layer disposed between the geometric pattern layer and the second electrical semiconductor layer. The method for producing a light-emitting diode according to claim 45, wherein the material of the first electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), and oxidation. A group of Zen, which consists of Tin Oxide, Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. The method for manufacturing a light-emitting diode according to claim 45, wherein the material of the first electrical contact layer is selected from the group consisting of indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), A group consisting of Tin Oxide, Cadmium Tin Oxide, Zinc oxide, Magnesium oxide, and Titanium Nitride. The method of manufacturing the light-emitting diode according to claim 45, wherein the geometric pattern layer is provided with a plurality of pyramid-shaped structures, and the angle of the bottom angle of each of the pyramid-shaped structures is substantially smaller than degree. The method of manufacturing a light-emitting diode according to claim 45, wherein the material of the permanent substrate is electrically conductive. The method of manufacturing the light-emitting diode according to claim 45, wherein the material of the permanent substrate is not electrically conductive. The method for manufacturing a light-emitting diode according to claim 45, wherein the material of the permanent substrate is selected from the group consisting of GaAsp, AlGalnP, and aluminum gallium arsenide. A group of (AlGaAs), gallium phosphide (GaP), tantalum and metal materials. The method for producing a light-emitting diode according to claim 45, wherein the material of the geometric pattern layer is selected from the group consisting of cerium oxide (si〇x), cerium nitride (SiNx), and titanium oxide (Ti〇). x) & Alumina (Α1〇χ) is a group of people. The method for producing a light-emitting diode according to claim 45, wherein the material of the metal reflective layer is selected from the group consisting of aluminum, gold, platinum, zinc, silver, nickel, ruthenium, indium, tin, and alloys thereof. One of the groups that make up. 56. The manufacture of a light-emitting diode according to claim 45, wherein the material of the bonding layer is selected from the group consisting of silver paste, spontaneous conductive polymer or polymer doped conductive material, Ming, A group consisting of gold, gu, zinc, silver, nickel, bismuth, indium, tin, titanium, copper, yttrium or alloys thereof. 57. The method of manufacturing a light-emitting diode according to claim 45, wherein the material of the first electrode is selected from the group consisting of In, Al, Ti, An, W, InSn, TiN, WSi, Ptln2. Nd/A Bu Ni/Si, Pd/A, Ta/A, Ti/Ag, Ta/Ag, Ti/A, Ti/Au, Ti/TiN, Zr/ZrN, Au/Ge/Ni, ringing, Cr/Ni /Au, Ni/Cr/Au, Ti/Pd/Au, Ti/Pt/Au, Ti/Al/Ni/Au, Au/Si/Ti/Au/Si, Au/Ni/Ti/Si/Ti or A group of alloys. The method of manufacturing the light-emitting diode according to claim 45, wherein the material of the second electrode is selected from the group consisting of Ni/Au, NiO/Au, Pd/Ag/Au/Ti/Au, Pt/ Ru, Ti/Pt/Au, Pd/Ni, Ni/Pd/Au, Pt/Ni/Au, Ru/Au, Nb/Au, Co/Au, Pt/Ni/Au, Ni/Pt, Niln, Pt3ln7 and A group of alloys. The method for manufacturing a light-emitting diode according to claim 45, further comprising: an insulating protective layer formed on the first electrical contact layer and the second electrical semiconductor layer not covered on the surface. The method of producing a light-emitting diode according to claim 59, wherein the insulating protective layer is selected from the group consisting of cerium-containing oxides, nitrides, and high dielectric organic materials. 28