200822353 九、發明說明： 【發明所屬之技術領域】 本發明係關於含有發光二極體（LED)組件與LED陣列組 件的發光裝置及其製造方法。t明確土也說，I發明係關於 LED透鏡組件以及LED陣列透鏡組件。再者，雖然並未明 示，不過本發明關於具有磷光體增強的lED組件。 【先前技術】 欲達成現今發光二極體（LED)所預期的亮度，必須有效 f) 地提取該LED晶片/晶粒所產生的光。led晶片通常具有一 邊緣發射或表面發射結構。全内反射係主要的損耗機制， 其會降低被發射光子的比例’且已知的係，入射至表面的 光子之全内反射會大於在由司乃耳定律所定義之臨界角i 的角度： ec^%in\njni) 其中’ n〇與⑴分別為空氣與LED晶片材料的折射率。此 外，LED材料内的吸收以及介面處的菲涅耳反射損耗會降 ° 低LED的光輸出效率。在平坦表面LED中的電光轉換總效 率如下給出[W.N· Carr 與 G.E. Pittman，Appl· Phys.Lett 3，173(1963)]: ^η,ηλ 其中如。％/㈨為透射係數，而（1_c〇sec)為實心圓錐。200822353 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device including a light-emitting diode (LED) module and an LED array component, and a method of manufacturing the same. It is also clear that the I invention relates to LED lens assemblies and LED array lens assemblies. Again, although not explicitly shown, the present invention is directed to a lED assembly having phosphor enhancement. [Prior Art] In order to achieve the brightness expected by today's light-emitting diodes (LEDs), it is necessary to efficiently f) extract the light generated by the LED chips/die. Led wafers typically have an edge emitting or surface emitting structure. Total internal reflection is the main loss mechanism, which reduces the proportion of emitted photons' and the known system, the total internal reflection of photons incident on the surface will be greater than the angle of the critical angle i defined by Snell's law: Ec^%in\njni) where 'n〇 and (1) are the refractive indices of the air and LED wafer materials, respectively. In addition, the absorption within the LED material and the Fresnel reflection loss at the interface will reduce the light output efficiency of the LED. The total efficiency of electro-optic conversion in a flat surface LED is given as follows [W. N. Carr and G. E. Pittman, Appl. Phys. Lett 3, 173 (1963)]: ^η, ηλ where. %/(9) is the transmission coefficient, and (1_c〇sec) is the solid cone.
為提高提取效率，可運用逐步降低晶片至空氣的折射率 來降低全内反射損耗。舉例來說，倘若使用一中間折射率 的媒體來囊封該LED晶片的話，那麼介於該lED 120933.doc 200822353 晶片與媒體之間的臨界角便會提高至0 = ^ 一— c—Sln (λΚΛο，導致 相對於空氣的提取效率會提高（Vw〇)2=Vw。倍，纟且會對菲 涅耳反射損耗作某些額外修正。 $ 其他技術已被用來提高提取效率。舉你丨氺 椚木說，可利用粗To improve extraction efficiency, the total internal reflection loss can be reduced by gradually reducing the refractive index of the wafer to air. For example, if an intermediate refractive index medium is used to encapsulate the LED wafer, then the critical angle between the wafer and the medium will increase to 0 = ^1 - c-Sln (the ED 120933.doc 200822353) λΚΛο, resulting in an increase in extraction efficiency relative to air (Vw〇) 2 = Vw. times, and some additional corrections to Fresnel reflection loss. $ Other techniques have been used to improve extraction efficiency. Tochigi said that it can be used coarsely
糙化LED晶片表面來有效放大該晶片的表面積並且從而確 保會有更多的發射光線落在該有效放大表面積所提供臨界 角區域内H技術則包含使用Μ晶體來盡可能地將 發射光的眾多模式耦合至一 LED晶片的頂部表面外部，尤 其是較低階的模式。 此外，凸透鏡之類的光學器件亦常用來改變一LED晶片 的發射輻射圖案，以便將其發射準直至所需的方向並且提 高該方向中的照明強度。通常，該透鏡會被表面黏著在一 個別LED晶片之上。再者，由玻璃或塑膠材料所製成的一 表面黏著透鏡還會提高光提取，因為其折射率低於晶片材 料的折射率且大於空氣的折射率。此外，其中凸地彎曲表 面還會大幅地增加介於該透鏡與空氣之間的臨界角區域的 大小’有助於從下方的晶片中提取更多數量的光。黏著此 等透鏡的一項問題係肇因於該LED晶片的大小，其大小通 常為數個微米，對齊該透鏡與該晶片的公差係非常精確且 該程序可能會變昂貴。據此，該LED晶片或數個晶片經常 會被黏著在一容器及被黏著於該容器的透鏡内。 近來所開發的以InGaN(氮化銦鎵）藍色LED晶片及各種 黃色磷光體（光致發光材料）為主的白色LED用以讓一 led 會對肉眼發射近似白色的光已經可達成眾多技術性與商業 120933.doc 200822353 性應用，其包含固態發光在内。目前，鱗光體材料之粒子 係被併入一囊封材料之中，接著該囊封材料便會被塗敷至 已經切割與封裝的個別LED晶片。在塗敷該罐光體之後， 該透鏡便會被表面黏著至該囊封鱗光體層。此製造技術效 • 果不佳、耗時、而且昂貴。 • 本案發明人已經發現，將磷光體材料直接塗敷在一透鏡 或某些其他此等光學器件的表面上或將其埋置在内部可簡 化製程並且可在白色LED的情況中達到較佳的白光均勻 度不過，在分離的晶片層級處個別封裝磷光體材料以及 透鏡仍是一耗時的程序。 所以，需要一種製造LED透鏡組件的改良方法，其能夠 在晶圓層級處提高麟紐，以便保持製造品質一致性、改 良封裝晶片效能、以及達成更高的良率。 【發明内容】 本專利所揭示的方法提供整合的解決方式，其係利用在 〇 LED晶圓層級處進行磷光體塗布與光學器件黏著來達到有 效的光提取、卓越的發光轉換與混色、有向性照明、以及 提面LED晶的亮度與均句|。該光學器件可能係一具有 麟光體塗布或埋置磷光體粒子的透鏡陣列。塗敷該透鏡陣 列與鱗光體的程序可能係藉由對LED晶圓直接施行微影方 法。本專利中所揭示的結構與程序能夠大幅地改良生產一 致性以及製造成本效率。應用一已塗敷的光學透鏡陣列能 夠大幅地改良光提取與發光轉換效能，並且會大幅地改良 製造品質一致性。 120933.doc 200822353 ^ 本I明，一 LED組件包括：一 led及一經佈置相鄰 D之發光表面的透鏡；其特徵為，言亥透鏡投影在該 LE:之發光表面上的斷面的面積實質上等於或小於該㈣ 之發光表面的面積。該LED組件可能進一步包括一被囊封 在透月材料内的磷光體，該透明材料會包圍該LED之發 光表面的至}_部分。或者，在該透鏡與該LED之發光表 面的至少一部分之間會佈置一磷光體層。 ΟThe surface of the LED wafer is roughened to effectively amplify the surface area of the wafer and thereby ensure that more of the emitted light falls within the critical angular region provided by the effective amplified surface area. The H technique involves the use of germanium crystals to maximize the amount of emitted light. The mode is coupled to the outside of the top surface of an LED wafer, especially in a lower order mode. In addition, optical devices such as convex lenses are also commonly used to change the emission pattern of an LED wafer to emit it in the desired direction and to enhance the illumination intensity in that direction. Typically, the lens will be adhered to a surface of an individual LED wafer. Furthermore, a surface-adhesive lens made of glass or plastic material also enhances light extraction because its refractive index is lower than that of the wafer material and greater than the refractive index of air. In addition, the convexly curved surface also greatly increases the size of the critical angular region between the lens and air to help extract a greater amount of light from the underlying wafer. One problem with attaching such lenses is that due to the size of the LED wafer, the size is typically a few microns, the tolerances for aligning the lens with the wafer are very precise and the procedure can be expensive. Accordingly, the LED wafer or wafers are often adhered to a container and adhered to the lens of the container. Recently developed white LEDs based on InGaN (Indium Gallium Nitride) blue LED chips and various yellow phosphors (photoluminescence materials) have been used to enable a LED to emit approximately white light to the naked eye. Sex and Business 120933.doc 200822353 Sexual application, which includes solid state lighting. Currently, the particles of the scale material are incorporated into an encapsulating material which is then applied to individual LED wafers that have been cut and packaged. After the can body is applied, the lens is adhered to the encapsulated scale layer by the surface. This manufacturing technique is poor, time consuming, and expensive. • The inventors have discovered that directly coating a phosphor material onto the surface of a lens or some other such optical device or embedding it inside can simplify the process and can be better in the case of white LEDs. White Light Uniformity However, individually encapsulating the phosphor material and the lens at separate wafer levels is still a time consuming process. Therefore, there is a need for an improved method of fabricating LED lens assemblies that enhances the level of the wafer to maintain consistent manufacturing quality, improve package wafer performance, and achieve higher yields. SUMMARY OF THE INVENTION The method disclosed in the present patent provides an integrated solution for achieving efficient light extraction, excellent luminescence conversion and color mixing, and directional using phosphor coating and optical device adhesion at the 〇LED wafer level. Sexual lighting, as well as the brightness and uniformity of the faceted LED crystals. The optical device may be a lens array having a smear coated or embedded phosphor particle. The procedure for applying the lens array to the scale may be by direct lithography of the LED wafer. The structures and procedures disclosed in this patent can greatly improve production consistency and manufacturing cost efficiency. The application of a coated optical lens array greatly improves the light extraction and luminescence conversion efficiency, and greatly improves the manufacturing quality consistency. 120933.doc 200822353 ^ In the present invention, an LED assembly comprises: a led and a lens arranged adjacent to the light emitting surface of the D; characterized in that the area of the section of the LED on the light emitting surface of the LE: The area of the light emitting surface equal to or smaller than the (four). The LED assembly may further include a phosphor encapsulated within the moon permeable material that surrounds the _ portion of the illuminating surface of the LED. Alternatively, a phosphor layer may be disposed between the lens and at least a portion of the light emitting surface of the LED. Ο
；配置中，至少兩個透鏡經佈置相鄰於一 LED之發光 表面，且该至少兩個透鏡投影在該I^ED之發光表面上的斷 面的面積之總和實質上等於或小於該led之發光表面的面 積。，該LED組件可能進—步包括—被囊封在一透明材料内 的磷光體，該透明材料會包圍該^LED之發光表面的至少一 部分。或者’在該至少兩個透鏡與該led之發光表面的至 少一部分之間會佈置一磷光體層。 根據本發明，一發光裝置包括··一LED陣列與一透鏡陣 列，其中至少一透鏡會與該LED陣列中各個部件相關聯且 其特徵為’各個透鏡投影在其相關聯LEd之發光表面上的 斷面的面積實質上等於或小於該LEd之發光表面的面積。 該發光裝置可能進一步包括一被囊封在一透明材料内的磷 光體’該透明材料會包圍該透鏡陣列的至少一部分。或 者’在該透鏡陣列的該等透鏡中至少一者與該LED陣列之 該等LED中至少一者之間會佈置一磷光體層。 根據另一具體實施例，一光子裝置包括：一 LED，其經 組態成用以從一發光表面處發射第一波長的輻射；一透 120933.doc -10- 200822353 鏡’其經組態成用以光學聚焦來自該led的輕射；一礙光 體’其經佈置相鄰於該LED，該磷光體經組態成用以吸收 該LED所發射的輻射之至少一部分並且發射第二波長的輻 射’其特徵為，該透鏡投影在該LED之發光表面上的斷面 的面積實質上等於或小於該LED之發光表面的面積。於一 配置中’該磷光體係被囊封在一透明材料内，該透明材料 會包圍該LED之發光表面的至少一部分。或者，該磷光體 係被佈置為介於該透鏡與該LED之發光表面的至少一部分 之間的"一層。 根據本發明的另一項觀點，製造一 LED組件的方法包 括·· a)在一含有一 LED陣列的基板上施配一透明透鏡材 料’以及b)將該透明透鏡材料模製成一所需的透鏡圖案， 以便匹配該LED陣列的圖案。視該透明透鏡材料而定，該 方法可能進一步包括，在移除一用於模製該透鏡圖案的模 具/壓印器之前’藉由UV固化或熱固化來固化該透明透鏡 材料。較佳的係，該方法進一步包括，移除該透明透鏡材 料中的選定區域，用以電接取該LED陣列中的電極。可藉 由钱刻、氧電漿蝕刻、或濕式蝕刻來移除該透明透鏡材料 / 中的該等選定區域。 於一配置中，該方法進一步包括，於該LED陣列基板之 上施配該透明透鏡材料之前，在該LED陣列基板的實質上 整個表面上沉積一鱗光體層。優點係，該方法進一步包 括’於沉積該鱗光體之前在該LED陣列的電極區域上方提 供一脫模劑。接著，該脫模劑便可經過處理並且使用一剝 120933.doc -11- 200822353 離步驟來移除該構光體層與透明透鏡材料中的選定區域， 用以電接取該LED陣列中的電極區。 或者’該方法進一步包括，將該模製的透鏡材料與led 陣列埋置在一含有一磷光體的透明基質之中。或者，該方 法包括在該透鏡陣列層與該LED陣列基板之間沉積一磷光 體層。 【實施方式】 本文揭示的係製造一含有一 LED晶片與相關透鏡之裝置 的方法，其具有或不具有磷光體材料，用以在晶圓層級處 進行混色與大量發光轉換。一透鏡陣列可被放置成相鄰於 在一基板上經過處理的LED晶粒陣列，該基板稱為LED晶 圓’其中在該透鏡陣列的個別透鏡與該晶圓上的個別led 晶粒之間存在一對應性。該透鏡陣列可利用微影技術來製 造，其包含模製、鑄造、以及壓印。該晶圓上的該LED晶 粒陣列可能係特有的以GaN(氮化鎵）為主的LED。在本專 利申請案内文中，發光二極體（LED)會被視為任何固態光 源並且可能包含雷射二極體。 LED組件與陣列 於本發明的一具體實施例中，該透鏡陣列的該等個別元 件（透鏡）的尺寸可實質上匹配一 LED晶圓上該等LED晶粒 的大小，更明確地說，各個陣列元件中的單一透鏡投影在 該對應的LED晶粒之發光表面上的斷面的面積實質上等於 該LED之發光表面的面積。於此配置中，該等透鏡與該等 曰曰片係以一對一的方式相互配對。或者，該透鏡陣列中該 120933.doc -12- 200822353 等個:透鏡的尺寸可能會大於LED晶圓上對應晶粒的周 ^匕們在工間上亦可能彼此匹配，俾使該等透鏡的大小 I圍於50 μηι至〜5 mm之間。圖！中所示的便係該透鏡 車列中it件與该LED陣列中一 LED晶粒的一對一匹配關 -係。 -於此、、且L中，透鏡陣列1係直接附著至LED陣列2，LED 陣列2係形成在一基板（晶圓）3之上。該透鏡陣列可由各種 #料形成，其包含：聚矽氧、環氧樹脂、聚合物、玻璃、 (； 《是塑膠材料。材料的選擇可相依於光提取的特定需求並 且會據以選出一具有正確折射率的材料。舉例來說，該等 透鏡1可能係圓形、正方形、矩形、六角形、或任何其他 形狀，端視預期的應用而定。除了改良照明的放射效率之 外，該等透鏡1會提高光提取效率，因為該等透鏡係被黏 著在該等LED晶片之上，所以其用作為一具有中間折射率 的光學媒體。較佳的係，各個透鏡具有中凸彎曲表面，其 y 實質上縮小入射在透鏡空氣介面上大多數光線的入射角 度，當相對於空氣的外表面為平坦時，該等光線則可歸因 於全内反射而遺失。應該明白的係，利用被黏著在一 lED 晶片上的單一凸透鏡便可提取更多的光。 於另一具體實施例中，如圖2中所示，在黏著該透鏡陣 列1之前可先在該LED晶圓3之上均勻地塗布一麟光體（光致 發光）材料層4。該構光體塗層4可經圖案化，以便為晶圓3 上的各個個別LED 2晶粒留下敞開的電極接觸視窗。該鱗 光體材料的化學組成物可經組態成用以強烈吸收由其上塗 120933.doc • 13 - 200822353 布著該層的該等LED 2所發射的光子，並且接著重新發射 一更長波長的光。該磷光體層的厚度可藉由控制該塗布程 序來進行最佳化’以便具有LED發射光的所需吸收效果。 該磷光體材料的選擇可取決於其發射頻帶的波長範圍以及 該破光體發射希望在混色中產生互補的LED發射的波長。 該磷光體材料可適度地併入一黏結材料之中，並且接著藉 由任何合適塗布程序將該組成物塗敷至該等lED晶片。 接著，便可使用下文所述的微影方法來將該透鏡陣列1 併入在該經圖案化的磷光體層4的頂部上。該透鏡陣列中 的個別透鏡1的尺寸可能實質上大於或匹配該LED晶圓上 該等LED晶粒的大小。該等透鏡與該等晶片可以一對一的 方式相互配對。因此，該透鏡陣列中該等透鏡的尺寸與該 LED晶圓上該等晶粒的周圍在空間會彼此匹配，俾使該等 透鏡的大小範圍介於〜50 μηι至〜5 mm之間。本具體實施例 的優點係’可以和^具體實施例中所使用者完全相同的 方式在具有磷光體塗層之LED晶圓上來處理該透鏡陣列。 如同圖1的具體實施例，該等透鏡可能係圓形、正方形、 或/、角幵>，視该4 LED晶片的幾何組態而定。該 透鏡陣列的材料可能係：聚錢、環氧樹脂、聚合物、玻 璃、或是⑽材料。該透鏡陣列中該等透鏡的折射率應該 選為小於該磷光體的折射率，以便確保從該LED材料至磷 光體至透鏡至空氣的折射率會逐步下降(η nLens>nG)，以提高光提取。再者，相較於相對於空氣為平 坦的表面所能夠提取的《，該等透鏡的中凸地彎曲表面實 120933.doc -14- 200822353 貝上會增加落在從透鏡至空氣的臨界角區域内的光線數 1’從而確保可提取更大量的光。 於另一具體實施例中，如圖3中所示，該透鏡陣列可經 過處理，俾使和一LED晶片2相關聯的各個陣列元件均由 複數個較小透鏡或小透鏡5所組成。一般來說，各個小透 鏡的尺寸範圍介於〜1011111至100 之間。該透鏡陣列經組 L成用以该晶圓3之上的一個、多個、或全部led晶粒2會 在’、頂邛上黏著一小透鏡陣列5，該小透鏡陣列會至少覆 蓋忒LED晶片的發光面積，且各個lED晶片在其發光表面 上會黏著4及數百個或甚至數千個小透鏡。於此配置中， 該等小透鏡投影在該LED之發光表面上的斷面的面積之總 和實質上等於或小於該LED之發光表面的面積。圖3與4所 不的係整合透鏡陣列與LED晶圓的方案，分別為具有及不 具有磷光體塗層4。除了先前具體實施例的優點之外，此 項運用複數個較小小透鏡的方案能夠進一步提高光提取， I》 為該專夕個小透鏡會提供複數個彎曲表面，它們會以和 一會提高光提取的粗糙表面類同的方式來隨機化從透鏡陣 列耦合至空氣的光線的光束路徑。再者，複數個較小小透 ’ 鏡還能夠改良來自該LED組件的照明的亮度之均勻度，此 係因為該等大量小透鏡會導致其具有改良的形狀因數。 製造LED組件與陣列的方法 圖5(a)至5(g)中所示的係生產本發明的led透鏡組件的 示範方法。於此範例中，該透鏡陣列會匹配一晶圓上的 LED a曰粒陣列，在該等兩個陣列之間並沒有任何中間璘光 120933.doc 200822353 體層。可用來在該晶圓上的該led陣列之上或上方生產該 透鏡陣列的一種方法係微影壓印方法。圖5(a)所示的係一 具有一或多個電極區6的LED晶圓3。應該注意的係，圖5 中並未顯示該LED陣列中的個別led。 該方法包括下面步驟： 步驟1-圖5(b):將一透明透鏡材料7塗布或施配在led晶 圓3之上。該透明透鏡材料7可能係：聚矽氧、環氧樹脂、 聚合物、玻璃、塑膠材料、或是它們的混合物； 步驟2-圖5(c)與5(d):應用一具有一圖案的壓印器8，其 會被设计成用以從透明透鏡材料至透明透鏡材料7來模製 该等透鏡’以便讓該材料與該壓印器8的形狀相符。於圖 中所示的具體實施例中，會有一透鏡對應於該LED晶圓中 的各個LED晶粒。壓印器8還經組態成用以提供一電極視 窗圖案9，以便隨後電接取該LED陣列中的一或多個電極 6 ； 步驟3-圖5(d):將該透鏡材料曝露至11乂輻射1〇或進行熱 處哩，以便固化該經圖案化的透鏡陣列與電極視窗（此步 驟為可選的且係相依於會用到的透鏡材料）。為讓該透鏡 材料曝露至uv，有利的係，遮罩8係由透明於射的材 料所製成； 步驟4-圖5(e):移除壓印器8 ;以及 步驟5,圖5(f):讓該透明材料的選定區域9曝露至一蝕刻 (例如氧電漿蝕刻或濕式蝕刻），用以灰化殘餘的矽或環氧 樹脂透鏡材料，及/或用以電接取用來提供電力給該等led 120933.doc • 16 - 200822353 與控制該等LED所需要的電極6。圖5(g)為已完成的咖透 鏡組件的平面圖。 圖6⑷至6(h)中所示的係用於生產一匹配於一咖陣列 的透鏡陣列的示範方法，在該等兩個陣列之間具有一中間 麟光體層’其同樣係使用壓印微f彡技術。圖6⑷所示的係 一具有一或多個電極區6的LED晶圓3。應該注意的係，圖 6中並未顯示該LED陣列中的個別led。 該方法包括下面步驟： 步驟1-圖6(b):在整個LED晶圓3上塗布或施配一磷光體 層12 ; 步驟2-圖6(c):將一透明透鏡材料7塗布或施配在該磷光 體層12之上；於一具體實施例中，該透明透鏡材料係：聚 石夕氧、環氧樹脂、聚合物、塑膠材料、玻璃、或是它們的 混合物； 步驟3-圖6(d)與6(e) ··應用一具有一圖案的壓印器8，其 會被5又e十成用以從透明透鏡材料至透明透鏡材料7來模製 該等透鏡，以便讓該材料與該壓印器8的形狀相符。於圖 中所示的具體實施例中，會有一透鏡對應於該LED晶圓中 的各個LED晶粒。壓印器8還經組態成用以提供一電極視 窗圖案9，以便隨後電接取該LED陣列中的一或多個電極 6 ； 步驟4-圖5(e):將該透鏡材料曝露至UV輻射1〇或進行熱 處哩，以便固化該經圖案化的透鏡陣列與電極視窗（此步 驟為可選的且係相依於會用到的透鏡材料）； 120933.doc -17- 200822353 步驟5·圖5(f):移除壓印器8 ;以及 步驟6圖5(g) ·視需要地讓該透明材料的選定區域曝 至-蝕刻(例如氧電漿或濕式刻），用以灰化殘餘的矽：磷 光體、或環氧樹脂透鏡材料，及/或用以電接取用來提供 電力給該等LED與控制該等LED的電極6。圖6(h)為已完成 的LED透鏡組件的平面圖。 在上面所述之後者方法的眾多可能變化例的一者中，如 圖6中所示之變化例’在圖6⑷中沉積該填光體塗層之前會 在該LED晶圓的電極區域6之上沉積一脫模劑u。接著， 在步驟5中移除壓印器8之後，便可實施剝離步驟程序13， 圖6(g)，其中，對該脫模劑進行合宜的處理（舉例來說，溶 解）便可移除位於電極上方的透明透鏡材料。因為該脫模 劑僅會被沉積在覆蓋著該（等）LED晶圓電極的區域之上， 所以在戎剝離步驟期間會被移除的唯一透鏡材料便係覆蓋 著該電極的透鏡材料。 彦替代磷光體配置 〇 配合LED透鏡裝置（個別組件以及匹配的陣列圖案）來組 態該磷光體的替代方式如圖7與8中所示。在圖7(a)至7(d) ’中所示的組態中，磷光體14係被埋置在一透明基質材料 (例如環氧樹脂）之中，而該LED透鏡組件2、1及/或匹配透 鏡陣列與LED陣列5、2本身則係被埋置在一外殼15内的磷 光體/基質材料14之中並且被該磷光體/基質材料14包圍。 因此’利用圖7(a)至7(d)中所示的組態，來自該等LED 2的 光在進入該充滿磷光體的環氧樹脂或矽材料14之前會被其 120933.doc -18 - 200822353 隨附的透鏡1聚焦及/或增強，其中1}其會激發該磷光體， 以及2)結合由該磷光體所產生的光，用以產生最終的生成 光。 或者’對圖8(a)至8(d)所示的情況來說，該磷光體係被 佈置在該LED 2及透鏡1/小透鏡陣列5之間作為層12(也就 是’位於LED透鏡組件内）。來自LED 2的光先激發磷光體 12’從而產生一第二波長的光，接著，來自該led的光與 源自該填光體的光被透鏡丨/小透鏡5聚焦與增強而成為一 組合實體。 不論該磷光體的組態方式為何（也就是，使用圖7的原理 或圖8的原理），用以組態LED透鏡組件以及LED陣列與透 鏡陣列的不同方式均可能相同。換言之，單一 Led可連同 單一 LED—起封裝，如圖7(a)與8(a)中所示。每個封裝可能 會有一個LED透鏡組件，如圖7(a)與8(a)的左邊所示；或 者，可能會有一個以上的組件（舉例來說，三個組件），如 圖7(a)與8(a)的右邊所示。於該些具體實施例中，一封裝In the configuration, at least two lenses are disposed adjacent to the light emitting surface of the LED, and the sum of the areas of the cross sections of the at least two lenses projected on the light emitting surface of the IED is substantially equal to or smaller than the led The area of the illuminated surface. The LED assembly may further comprise - a phosphor encapsulated in a transparent material that surrounds at least a portion of the light emitting surface of the LED. Or a phosphor layer may be disposed between the at least two lenses and at least a portion of the light emitting surface of the LED. In accordance with the present invention, a light emitting device includes an LED array and a lens array, wherein at least one lens is associated with various components of the LED array and is characterized by 'each lens projected onto a light emitting surface of its associated LEd The area of the cross section is substantially equal to or smaller than the area of the light emitting surface of the LEd. The illumination device may further comprise a phosphor encapsulated within a transparent material that surrounds at least a portion of the array of lenses. Or a phosphor layer may be disposed between at least one of the lenses of the lens array and at least one of the LEDs of the LED array. In accordance with another embodiment, a photonic device includes: an LED configured to emit radiation of a first wavelength from a light emitting surface; a lens permeable to 120933.doc -10- 200822353 For optically focusing light from the LED; a light blocking body disposed adjacent to the LED, the phosphor being configured to absorb at least a portion of the radiation emitted by the LED and to emit a second wavelength The radiation is characterized in that the area of the cross section of the lens projected on the light emitting surface of the LED is substantially equal to or smaller than the area of the light emitting surface of the LED. In a configuration, the phosphorescent system is encapsulated in a transparent material that surrounds at least a portion of the light emitting surface of the LED. Alternatively, the phosphor is arranged as a "layer between the lens and at least a portion of the light emitting surface of the LED. According to another aspect of the invention, a method of fabricating an LED assembly includes: a) dispensing a transparent lens material on a substrate comprising an array of LEDs; and b) molding the transparent lens material into a desired The lens pattern to match the pattern of the LED array. Depending on the transparent lens material, the method may further comprise curing the transparent lens material by UV curing or thermal curing prior to removing a mold/imprinter for molding the lens pattern. Preferably, the method further includes removing selected regions of the transparent lens material for electrically receiving electrodes in the array of LEDs. The selected regions of the transparent lens material / can be removed by engraving, oxygen plasma etching, or wet etching. In one arrangement, the method further includes depositing a scale layer over substantially the entire surface of the LED array substrate prior to applying the transparent lens material over the LED array substrate. Advantageously, the method further comprises ' providing a release agent over the electrode area of the LED array prior to depositing the scale. Then, the release agent can be processed and a stripping step 120933.doc -11-200822353 is used to remove selected regions of the illuminant layer and the transparent lens material for electrically picking up the electrode regions in the LED array. . Or the method further comprising embedding the molded lens material and the LED array in a transparent substrate comprising a phosphor. Alternatively, the method includes depositing a phosphor layer between the lens array layer and the LED array substrate. [Embodiment] Disclosed herein is a method of fabricating a device comprising an LED wafer and associated lens with or without a phosphor material for color mixing and bulk luminescence conversion at the wafer level. A lens array can be placed adjacent to an array of processed LED dies on a substrate, referred to as an LED wafer 'between individual lenses of the lens array and individual led dies on the wafer There is a correspondence. The lens array can be fabricated using lithography techniques including molding, casting, and stamping. The array of LED crystals on the wafer may be a unique GaN (gallium nitride) based LED. In the context of this patent application, a light-emitting diode (LED) is considered to be any solid state light source and may contain a laser diode. LED Components and Arrays In an embodiment of the invention, the individual components (lenses) of the lens array are sized to substantially match the size of the LED dies on an LED wafer, and more specifically, each The area of the cross-section of the single lens projection in the array element on the light-emitting surface of the corresponding LED die is substantially equal to the area of the light-emitting surface of the LED. In this configuration, the lenses and the cymbals are paired with each other in a one-to-one manner. Alternatively, the lens array may have a size of 120933.doc -12-200822353, etc.: the size of the lens may be larger than that of the corresponding die on the LED wafer, and the lenses may also match each other in the work area, so that the lenses are Size I is between 50 μηι and ~5 mm. Figure! Shown in this is a one-to-one matching of the one piece of the lens train with an LED die in the LED array. In this case, and in L, the lens array 1 is directly attached to the LED array 2, and the LED array 2 is formed on a substrate (wafer) 3. The lens array can be formed from various materials, including: polyfluorene oxide, epoxy resin, polymer, glass, (; "is a plastic material. The choice of materials can be dependent on the specific needs of light extraction and will be selected one by one. Materials of correct refractive index. For example, the lenses 1 may be circular, square, rectangular, hexagonal, or any other shape depending on the intended application. In addition to improving the radiation efficiency of the illumination, such The lens 1 enhances the light extraction efficiency because the lenses are adhered to the LED wafers, so they are used as an optical medium having an intermediate refractive index. Preferably, each lens has a convex curved surface, y substantially reduces the angle of incidence of most of the light incident on the air interface of the lens. When the outer surface of the air is flat, the light can be lost due to total internal reflection. It should be understood that the system is glued. A single convex lens on an lED wafer can extract more light. In another embodiment, as shown in FIG. 2, before attaching the lens array 1 A layer of smectite (photoluminescence) material 4 is uniformly coated on the LED wafer 3. The illuminant coating 4 can be patterned to leave an opening for each individual LED 2 die on the wafer 3. Electrode contact window. The chemical composition of the scale material can be configured to strongly absorb photons emitted by the LEDs 2 on which the layer is coated with 120933.doc • 13 - 200822353, and then re- Emitting a longer wavelength of light. The thickness of the phosphor layer can be optimized by controlling the coating process to have the desired absorption effect of the LED emitting light. The choice of phosphor material can depend on its emission band. The wavelength range and the wavelength of the light-emitting body are desired to produce a complementary LED emission in the color mixing. The phosphor material can be moderately incorporated into a bonding material and then applied to the bonding material by any suitable coating procedure. The lED wafers. Next, the lens array 1 can be incorporated on top of the patterned phosphor layer 4 using the lithography method described below. The size of the individual lenses 1 in the lens array Capable of substantially greater than or matching the size of the LED dies on the LED wafer. The lenses and the wafers can be paired with each other in a one-to-one manner. Thus, the size of the lenses in the lens array and the LED crystal The circumference of the grains on the circle will match each other in space, so that the size of the lenses ranges from 〜50 μηι to 〜5 mm. The advantages of this embodiment are as follows. The lens array is processed on the LED wafer with the phosphor coating in exactly the same way as the user. As with the specific embodiment of Figure 1, the lenses may be circular, square, or /, angular 幵 > 4 The geometry of the LED chip depends on the material of the lens array: poly-money, epoxy, polymer, glass, or (10) material. The refractive index of the lenses in the lens array should be chosen to be less than the refractive index of the phosphor to ensure that the refractive index from the LED material to the phosphor to the lens to air is gradually reduced (η nLens > nG) to enhance light. extract. Furthermore, compared to the surface that can be extracted with respect to a flat surface with air, the convex curved surface of the lens is 120933.doc -14-200822353, which increases the critical angle region from the lens to the air. The number of rays inside is 1' to ensure that a larger amount of light can be extracted. In another embodiment, as shown in Figure 3, the lens array can be processed such that each array element associated with an LED wafer 2 is comprised of a plurality of smaller lenses or lenslets 5. In general, each small lens has a size range of ~1011111 to 100. The lens array is formed by group L for one, a plurality, or all of the LED dies 2 on the wafer 3 to adhere to a lenslet array 5 on the top cymbal, the lenslet array covering at least the 忒LED The light-emitting area of the wafer, and each lED wafer will adhere to 4 and hundreds or even thousands of lenslets on its light-emitting surface. In this configuration, the sum of the areas of the cross-sections projected by the lenslets on the light-emitting surface of the LED is substantially equal to or less than the area of the light-emitting surface of the LED. Figures 3 and 4 show the integration of the lens array and the LED wafer with and without the phosphor coating 4, respectively. In addition to the advantages of the previous embodiments, this method of using a plurality of smaller lenslets can further improve light extraction, and I will provide a plurality of curved surfaces for the special lenslets, which will increase and The rough surface of the light extraction is similar in a way to randomize the beam path of the light coupled from the lens array to the air. Moreover, a plurality of smaller mirrors can also improve the uniformity of brightness of illumination from the LED assembly because such a large number of lenslets result in an improved form factor. Method of Manufacturing LED Assembly and Array The exemplary method of producing the LED lens assembly of the present invention shown in Figures 5(a) to 5(g). In this example, the lens array will match the array of LEDs on a wafer without any intermediate light between the two arrays. One method that can be used to produce the lens array on or over the LED array on the wafer is a lithography imprint method. An LED wafer 3 having one or more electrode regions 6 is shown in Fig. 5(a). It should be noted that the individual LEDs in the LED array are not shown in Figure 5. The method comprises the following steps: Step 1 - Figure 5 (b): A transparent lens material 7 is coated or dispensed onto the LED wafer 3. The transparent lens material 7 may be: polyfluorene oxide, epoxy resin, polymer, glass, plastic material, or a mixture thereof; Step 2 - Figures 5 (c) and 5 (d): Application has a pattern An embossing device 8, which will be designed to mold the lenses from the transparent lens material to the transparent lens material 7 to conform the material to the shape of the embossing 8. In the particular embodiment shown in the figures, there will be a lens corresponding to each of the LED dies in the LED wafer. The stamper 8 is also configured to provide an electrode window pattern 9 for subsequent electrical pick-up of one or more electrodes 6 in the array of LEDs; Step 3 - Figure 5(d): exposing the lens material to 11乂 Radiation 1〇 or thermal 哩 to cure the patterned lens array and electrode window (this step is optional and depends on the lens material that will be used). In order to expose the lens material to uv, the mask 8 is made of a transparent material; Step 4 - Figure 5 (e): remove the stamp 8; and step 5, Figure 5 ( f): exposing selected regions 9 of the transparent material to an etch (eg, oxygen plasma etching or wet etching) to ash residual germanium or epoxy lens material, and/or for electrical access To provide power to these LEDs 120933.doc • 16 - 200822353 with the electrodes 6 required to control these LEDs. Figure 5 (g) is a plan view of the finished café assembly. An exemplary method for producing a lens array matched to a coffee grid array as shown in Figures 6(4) through 6(h), having an intermediate lining layer between the two arrays, which also uses imprinting micro f彡 technology. An LED wafer 3 having one or more electrode regions 6 is shown in Fig. 6 (4). It should be noted that the individual LEDs in the LED array are not shown in Figure 6. The method comprises the following steps: Step 1 - Figure 6 (b): coating or dispensing a phosphor layer 12 on the entire LED wafer 3; Step 2 - Figure 6 (c): coating or dispensing a transparent lens material 7 Above the phosphor layer 12; in a specific embodiment, the transparent lens material is: polyox, oxygen, polymer, plastic material, glass, or a mixture thereof; Step 3 - Figure 6 ( d) and 6(e) · apply a stamper 8 having a pattern which will be used to mold the lenses from the transparent lens material to the transparent lens material 7 in order to allow the material It conforms to the shape of the stamper 8. In the particular embodiment shown in the figures, there will be a lens corresponding to each of the LED dies in the LED wafer. The stamper 8 is also configured to provide an electrode window pattern 9 for subsequent electrical pick-up of one or more electrodes 6 in the array of LEDs; Step 4 - Figure 5(e): exposing the lens material to UV radiation 1〇 or thermal 哩 to cure the patterned lens array and electrode window (this step is optional and depends on the lens material used); 120933.doc -17- 200822353 Step 5 Figure 5 (f): remove the stamp 8; and step 6 Figure 5 (g) - optionally expose the selected area of the transparent material to - etching (such as oxygen plasma or wet engraving) Residual ruthenium: phosphor, or epoxy lens material, and/or electrical contacts for providing electrical power to the LEDs and electrodes 6 that control the LEDs. Figure 6(h) is a plan view of the completed LED lens assembly. In one of the many possible variations of the latter method described above, the variation as shown in FIG. 6 will be in the electrode region 6 of the LED wafer before depositing the filler coating in FIG. 6(4). A release agent u is deposited thereon. Next, after removing the stamper 8 in step 5, the stripping step procedure 13 can be performed, FIG. 6(g), wherein the mold release agent can be removed by a suitable treatment (for example, dissolution). A transparent lens material located above the electrodes. Since the release agent is only deposited over the area covering the LED wafer electrode, the only lens material that will be removed during the tantalum stripping step covers the lens material of the electrode. Yan Alternative Phosphor Configuration 替代 An alternative to configuring the phosphor in conjunction with an LED lens assembly (individual components and matching array patterns) is shown in Figures 7 and 8. In the configuration shown in Figures 7(a) through 7(d)', the phosphor 14 is embedded in a transparent matrix material (e.g., epoxy), and the LED lens assembly 2, 1 and The matching lens array and LED array 5, 2 itself are embedded in and surrounded by the phosphor/matrix material 14 within a housing 15. Thus, with the configuration shown in Figures 7(a) through 7(d), light from the LEDs 2 will be illuminated by the phosphor or tantalum material 14 before it enters the phosphor. - 200822353 The attached lens 1 is focused and/or enhanced, wherein 1} it excites the phosphor, and 2) combines the light generated by the phosphor to produce the final generated light. Or 'for the case shown in Figures 8(a) to 8(d), the phosphorescent system is disposed between the LED 2 and the lens 1 / lenslet array 5 as a layer 12 (i.e., 'located in the LED lens assembly Inside). The light from the LED 2 first excites the phosphor 12' to generate a second wavelength of light, and then the light from the led and the light from the fill are focused and enhanced by the lens/lens 5 to form a combination. entity. Regardless of the configuration of the phosphor (i.e., using the principles of Figure 7 or the principles of Figure 8), the different ways to configure the LED lens assembly and the LED array and lens array may be the same. In other words, a single Led can be packaged with a single LED, as shown in Figures 7(a) and 8(a). Each package may have an LED lens assembly, as shown on the left side of Figures 7(a) and 8(a); or there may be more than one component (for example, three components), as shown in Figure 7 ( a) is shown on the right side of 8(a). In these specific embodiments, a package
、，",小。歹芩團/(b)左邊，與單 led晶片配對的單一迷你小透鏡陣列5被封裝在 迷你小透鏡陣列的斷面呈現出四列（或行）。在 褒在一起；該 在單一封裝中 120933.doc -19- 200822353 可封閉數個此等單元，例如，在圖7(b)右邊有三個單元。 同樣地，圖7(b)中所示的係被囊封在包圍該（等）㈣透鏡 、-構的透明基質之_的_發光磷光體的配置，而圖8⑻中 所不的係針對该發光鱗光體被塗布在介於該（等）[仙晶片 . 與该（等）透鏡間的—層之中的情況的雷同配置。在一平面 圖中圖7⑻與8⑻中所示之陣列的形狀可能係正方形， 其意=著-列之中的陣列部件數量等於一行之中的陣列部 #數1。該陣列的形狀亦可能係矩形，其中-列之中的陣 列邛件數里多於或少於一行之中的陣列部件數量。 /陣列的形狀可能係線形，也就是說，該封裝之中僅有 一列’而在該列之中則有多個LED透鏡組件（舉例來說，多 個，部件）。此組態可稱為「條狀」封裝。於此情況中， 。亥等單7L可能包括和單_ LED配對的單_透鏡，如圖7⑷ 中針對一囊封的磷光體所示者及圖8(c)中針對一磷光體塗 曰斤示者，或者，可能包括和單一 led相關聯的多個小透 Q 豸如圖7(d)中針對一囊封的麟光體所示者及圖8(d)中針 對一磷光體塗層所示者。 【圖式簡單說明】 為更瞭解本發明，現在將透過範例，參考附圖，來說明 本發明的具體實施例： 圖1為根據本發明將一透鏡陣列塗敷至一晶圓上的一 LED晶粒陣列的方法的示意圖； 圖2為一透鏡陣列與一磷光體塗層的示意圖，其中該透 鏡陣列已經組態成將一透鏡指派給各個LED晶粒，且其中 120933.doc -20- 200822353 該LED陣列已被製造在-晶圓之上； 圖3所示的係—透鏡陣列的,,", small. On the left side of the 歹芩 / / (b), a single mini lenslet array 5 paired with a single led wafer is packaged in a four-column (or row) section of the mini lenslet array. In the single package 120933.doc -19- 200822353 can close several of these units, for example, there are three units on the right side of Figure 7 (b). Similarly, the structure shown in FIG. 7(b) is encapsulated in a configuration of a luminescent phosphor that surrounds the (four) lens, the transparent substrate of the structure, and the other is not in FIG. 8(8). The luminescent scale is applied in the same configuration as in the case of the layer between the wafer and the lens. The shape of the array shown in Figures 7(8) and 8(8) in a plan view may be square, meaning that the number of array components in the - column is equal to the array portion #1 in a row. The shape of the array may also be rectangular, with the number of array elements in the - column being more or less than the number of array components in a row. The shape of the array may be linear, that is, there is only one column 'without the package' and there are multiple LED lens assemblies (for example, multiple, components) in the column. This configuration can be referred to as a "strip" package. In this case, . A single 7L such as Hai may include a single lens paired with a single LED, as shown in Figure 7(4) for an encapsulated phosphor and Figure 8(c) for a phosphor coating, or, possibly A plurality of small Q-throughs associated with a single led are shown in Figure 7(d) for one encapsulated plexiform and Figure 8(d) for a phosphor coating. BRIEF DESCRIPTION OF THE DRAWINGS For a better understanding of the present invention, specific embodiments of the present invention will now be described by way of example and reference to the accompanying drawings. FIG. 1 is an illustration of an LED of a lens array applied to a wafer in accordance with the present invention. Schematic diagram of a method of grain array; FIG. 2 is a schematic diagram of a lens array and a phosphor coating, wherein the lens array has been configured to assign a lens to each LED die, and wherein 120933.doc -20- 200822353 The LED array has been fabricated on-wafer; the lens-array array shown in Figure 3
晶粒上會提供多個透鏡； ^ 中在各個LED 圖4為和圖3之組態雷同的組態 每-組透鏡的磷光體； 進V包含一塗布 圖5⑷至5(g)所示的係根據本發明之一方法用於在一 LED陣列頂部上模製—透鏡陣列的步驟； Ο 圖6⑷至6(h)所示的係和圖5中所示者雷同的製造方法的 步驟，並且進-步包含在該透鏡陣列與該陣列之間沉 積一磷光體層； 圖7(a)至7(d)為根據本發明的發光裝置的示意代表圖； 以及 圖8(a)至8(d)為根據本發明的發光裝置的示意代表圖。 【主要元件符號說明】 1 2 3 4 5 6 7 8 9 透鏡陣列/LED透鏡組件 LED陣列/LED晶片/LED晶粒/LED透鏡 組件 基板/LED晶圓 磷光·體材料/磷光體塗層/磷光體層 小透鏡陣列 電極區 透鏡材料 壓印器/遮罩 電極視窗圖案/選定區域 120933.doc •21- 200822353 10 υν輻射 11 脫模劑 12 磷光體層 14 磷光體/基質材料 15 外殼 Γ C, 120933.doc -22-Multiple lenses are provided on the die; ^ in each LED Figure 4 is the configuration of the phosphor of each group of lenses in the same configuration as Figure 3; the V contains a coating as shown in Figures 5(4) to 5(g) a step of molding a lens array on top of an LED array according to one of the methods of the present invention; 步骤 the steps shown in Figures 6(4) to 6(h) and the manufacturing method shown in Figure 5, and The further step comprises depositing a phosphor layer between the lens array and the array; Figures 7(a) to 7(d) are schematic representations of a light emitting device according to the present invention; and Figures 8(a) through 8(d) Is a schematic representation of a lighting device according to the invention. [Main component symbol description] 1 2 3 4 5 6 7 8 9 Lens array / LED lens assembly LED array / LED chip / LED die / LED lens assembly substrate / LED wafer phosphor / body material / phosphor coating / phosphorescent Bulk lenslet array electrode area Lens material stamper/mask electrode window pattern/selected area 120933.doc •21- 200822353 10 υν radiation 11 release agent 12 phosphor layer 14 phosphor/matrix material 15 shell Γ C, 120933. Doc -22-