TW200828529A - Package structure of photosensitive chip and the making method thereof - Google Patents

Abstract

The present invention mainly establishes the photosensitive chip on one side of wafer by using the connecting layer. The color filter array is installed on the upper position of the photosensitive chip. The glass substrate installed with the weir wall is covering upon the color filter array. There is an appropriate space between the glass substrate and the color filter array, which can increase the penetration rate of light by using the photosensitive chip established on the wafer to receive the light directly.

Description

200828529 IX. Inventive description: [Technical field of invention] This is a photosensitive wafer package structure and its manufacturing method/曰μ尤-species type of photosensitive day that can increase the light transmittance to improve the resolution. Japanese package structure and its manufacturing method. [Prior Art]

Ik is popular with audio and video multimedia, and digital imaging devices have been introduced one after another. The status of the device and key core component image sensors is also becoming increasingly important. The image sensing is mainly responsible for converting the optical image signal into an electrical signal, and the type of the sensing component can be generally divided into a Charge Coupled Device (CCD) image sensor and a complementary gold oxide. Semiconductor (Complementary Metal Oxide Semiconductor, CMOS for short) image sensor and so on. Among them, because the complementary MOS image sensor has the advantages of low price, low power consumption, random readability and high integration, it is currently used in camera phones and webcams. Wait for more affordable products. The thirteenth figure is a schematic cross-sectional view of a conventional image sensor. The image sensor 80 of the image sensor 80 is disposed in the substrate 82, wherein the photosensitive wafer 81 is, for example, a majority of the substrate 8. A photo diode having a pn junction (Pn junction). In more detail, the photosensitive wafer 81 is generally composed of an n-type doped region, a p-type doped region, and a naturally formed ρ_η junction between the n-type doped region and the p-type doped region in the substrate 82. . An interconnect layer 8 4 is disposed on the base 82 of the base 5 200828529 and includes a plurality of metal interconnects and a dielectric layer between the metal interconnects (not shown). The metal interconnect is adapted to transmit the signal received by the aa chip 8 1 to the circuit board 8 $ to perform subsequent image processing. The color light-emitting film 8 6 is arranged in an array on the inner wiring layer 84, and corresponds to the photosensitive crystal in the substrate 82 = and each color light-emitting sheet 86 is covered with a light to collect the light 2 microlens f 7 . . . , and above the microlens 8 7 , a glass substrate is arranged to be connected to the interconnect layer 8 4 by the support 8 9 . The boundary light 9 1 is received by the photosensitive wafer 81 via the microlens 8 7 and the color filter, the optical film 8 6 1 = the 3-line layer 84. The layout of the metal interconnects in the layer 8 4 "layer 8 4 must avoid the photosensitive bismuth side to avoid the metal layer as the metal interconnect (the light intensity is not detected by the low-sensing wafer 81 in the figure). In addition, the dielectric layer in the interconnect layer 804 (the unmanned portion of the figure emits light (that is, absorbs or reflects light), and (4) the ray gradually decays in the interconnect layer 804, thereby causing Residual,; = Insufficient light intensity is detected. & first smear 8 1 sense [Summary of the invention] In this case, the main purpose of the present invention is the line penetration rate to improve the resolution of the photosensitive type = f-species The optical method can be added. When the 乂 式 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日The glass substrate of the 200828529 glass substrate is disposed on the glass substrate and covers the color filter array. At the same time, a suitable gap is formed between the glass substrate and the color filter array, and the light is directly received by the photosensitive wafer built on the wafer. Can increase the penetration rate of light. DETAILED DESCRIPTION OF THE INVENTION The features of the present invention can be clearly understood by referring to the description of the present invention. The "photosensitive wafer package structure and manufacturing method thereof" of the present invention, the photosensitive chip package structure The structure is as shown in the first figure, and the basin contains less than: 〃 曰曰 1 , which is provided with the first and second surfaces 11 and 12 , and the first surface 1 1 is provided with the bonding layer 2 and a plurality of photosensitive wafers 3 combined with a plurality of photosensitive wafers 3, each of the photosensitive wafers 3 has a gap between three, and the bonding layer 2 is disposed on the first surface of the wafer i, and each of the senses is respectively provided with a color filter array above the wafer 3. 4. The color filter array 4 is disposed on each of the photosensitive wafers 3 by using the bonding layer 2. One: the glass substrate 5, the glass substrate 5 is provided with a plurality of walls 5, and the wall is 5 1 is disposed at a distance of 3 各 of each photosensitive wafer 3, and forms a suitable gap between the glass substrate 5 and the color filter array 4, wherein the step 51 is a photoresist material (for example, solder resist green paint). ^ The second surface 1 2 of the circle 1 is sequentially constructed with a substrate 6 1 , first j layer 6 2, conductive layer 63, and the outermost second insulating layer 6 4 2 way pin 6 5, each circuit pin 6 5 through the second insulating layer 6 4 /, $ layer 6 3 contact And through the conductive layer 63 to form the wafer defect and circuit 200828529

The electrical connection between If can be used as the solder joint of the photosensitive chip package. The low-resistance constituting the optical component is directly constructed on the wafer, and can be reduced by 2, " to increase the light transmittance and the light-sensing performance, and is applied to the Ϊ: loading: the resolution can be improved and the high-quality advantage. The first μ j photosensitive chip package structure 1 (four) package process is shown in the figure of the brother and the figure 12, and includes the following steps: 1Set the bonding layer 2, and connect it as shown in the second figure, Photosensitive a, a plurality of photosensitive wafers 3 are formed on the first surface working layer 2 of the wafer 1 and have a spacing 31 between the wafers 3. b. On the photosensitive wafer 4, as shown in the third figure. The color filter array is provided by the bonding layer 2, and the glass substrate 5 of the surface wall 51 is provided, and the glass substrate 5 is provided with a plurality of walls 5 1 on the side of the glass substrate 5. d. The glass substrate 5 is covered on the color filter and the light array 4, as shown in FIG. 5, and each of the walls 5 1 is disposed at the interval 31, and the glass substrate 5 is made by using the wall 51. The color filter array 4 is formed, and the substrate adhesion step is as shown in FIG. 6 , and the wafer 1 is bonded to the second surface 1 of the photosensitive wafer 3 by the bonding layer 2 - the substrate 6 is adhered 1. The substrate 61 may also be made of glass. The first insulating layer construction step of the soil is as shown in the seventh (A) and (B), and the insulating material 6 2 1 is coated on the substrate 6 1 . In practice, the insulating material 6 2 1 may be a photoresist. After the agent or the resin is applied, a suitable planarization treatment is performed, and a 200828529 insulating layer 62 is formed at a specific position of the substrate 6丨 by a silking method. The first and eighth transmissions are on the substrate 6 1 different from 7! ΛΛ, 处 at the first channel groove 7 1, the first track m, the beast, the ice system is in contact with the 堰 wall 5 丄 or Human / h, the conductive layer is constructed as the same as the a- y layer coating-layer as the package conductive; no: the second-insulation layer 6 2 bottom extends to the first track: groove B = metal material 'and The sound layer 6 layer is constructed as shown in the tenth (A) and (8), and is formed on the conductive edge material to form the second insulating layer 64. The second processing method is useful for::=:;: using exposure and development 641. , 6 3, the circuit pin is connected to the overnight conductive sound 6 3 bias Π 5 6 5 is passed through the second insulating layer 6 4 /, the cold layer b 3 contacts, and then through the conductive bucket pin 6 5 Electrical connection, and can be connected with the circuit to create a printed circuit board. ...1 optical wafer package structure 1, the second cutting step is as shown in Fig. 12, and a second groove 7 extending into the glass substrate 5 is formed at 1 to form a concave groove 7 to separate the optical wafer 3, so that Each photosensitive wafer seal; a sensed individual; of course, the photosensitive chip package construction army 0 = this step can also be omitted. The technical content and technical features of the present invention are disclosed in the foregoing, and the person skilled in the art may still use the disclosure of the present invention to make a long-term and non-existent spirit. Therefore, the present invention is not limited to the embodiments disclosed, but includes various alternatives and modifications without departing from the invention, and is covered by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a cross-sectional view showing a structure of a photosensitive wafer package in the present invention. The method of processing the photosensitive wafer of the wafer in the present invention is not intended. The third figure is a schematic view of the processing steps of providing a color filter array for the photosensitive wafer in the present invention. The fourth figure is a schematic structural view of the glass substrate in the present invention. The fifth figure is a schematic diagram of the processing steps of the glass substrate covering the color filter array in the present invention. The sixth figure is a schematic diagram of the steps of substrate adhesion processing in the present invention. The seventh (A) and (B) are schematic views showing the steps of constructing the first insulating layer in the present invention. The eighth figure is a schematic diagram of the first cutting process step in the present invention. The ninth drawing is a schematic view of the processing steps of the conductive layer in the present invention. The tenth (A) and (B) are schematic views showing the processing steps of the second insulating layer in the present invention. The eleventh figure is a schematic diagram of the steps of processing the circuit pins in the present invention. The twelfth figure is a schematic view of the second cutting process step in the present invention. The thirteenth image is a schematic cross-sectional view of a conventional image sensor. [Description of main component representative symbols] 10 Photosensitive chip package structure 1 Wafer 10 200828529 1 1 First surface 1 2--Second surface 2 --- Bonding layer 3 Photosensitive wafer 3 1 Space 4 Color filter array 5 Glass substrate 5 1--堰Wall 6 1 Substrate 6 2 - First insulating layer 6 2 1 Insulating material 6 3 - Conductive layer 64 - Second insulating layer 6 4 1 One channel 6 5 - Circuit pin 71 a groove 7 2--second groove 80 image sensor 8 1 light sensor 8 2 substrate 8 4--internal layer 8 5--circuit board 8 6--color filter 8 7 Microlens 8 8--Glass substrate 11 200828529 • 89--Support 9 1--External light

Claims (1)

200828529 X. Patent application scope: 1 ^ A photosensitive wafer package structure, which comprises at least one wafer, which is provided with a first and second surface, and a mountain bonding layer is combined with a plurality of photosensitive wafers; A plurality of photosensitive wafers are disposed, and each of the photosensitive wafers is disposed on the first surface of the wafer, and the ruthenium and the ruthenium are combined with the color filter array; and the σά s 曰 曰 is respectively provided with a plurality of 堰Wall: and form a suitable gap with the color filter array. Asian-made glass accident substrate 2 such as the request item! The surface of the photosensitive wafer package structure is sequentially constructed with a substrate, 0 /, the most peripheral of the day, the @ - ^ Μ & + & , bar, , 彖 layer, conductive layer, and (4) (4) - (4) layers and circuit pins, each circuit, and the edge layer are in contact with the conductive layer.糸牙过弟一3, as for the 氺彳曰 滤 滤 项 项 : : : : : : : : : : : : : 滤 滤 滤 滤 ; ; ; ; ; ; ; ; ; 广 广 广 广 广 广 广 广 广material. A precursor wafer package structure, wherein the photosensitive wafer resist material according to claim 4 is a solder resist green paint. , ° , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , A color filter array is disposed on the upper surface; 13 200828529 C. A glass substrate provided with a wall is provided; d, a glass substrate is covered on the color filter array, and the glass substrate and the color filter array form a proper gap. The manufacturing method of the photosensitive chip package according to claim 6, wherein the substrate bonding can be carried out in step d - the first-time cutting, the conductive layer construction, the second insulating foot, and the Secondary cutting and other steps. The package bonding step 8 is as follows. In the photosensitive wafer according to claim 7, the substrate bonding step is performed by attaching a substrate to the photosensitive bonding layer. The other side is 99, the photosensitive wafer encapsulation two insulation layer construction step according to claim 7 is coated on the substrate with insulation; 'the wind is used at a specific position of the substrate to form the first-thickness, such as The photosensitive crystal according to item 7 of the present invention, wherein the first cutting, a groove. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The photosensitive material according to claim 3, wherein the crucible wall is a photoresist material. The method of making a garment is '^, as described in claim 12, wherein the photoresist material is a solder resist green paint. "Manufacturer 14