TW200813269A - Raw material for single crystal SIC production, production method thereof, production method of single crystal SIC using the raw material, and single crystal SIC obtained by the production method - Google Patents
Raw material for single crystal SIC production, production method thereof, production method of single crystal SIC using the raw material, and single crystal SIC obtained by the production method Download PDFInfo
- Publication number
- TW200813269A TW200813269A TW96116097A TW96116097A TW200813269A TW 200813269 A TW200813269 A TW 200813269A TW 96116097 A TW96116097 A TW 96116097A TW 96116097 A TW96116097 A TW 96116097A TW 200813269 A TW200813269 A TW 200813269A
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- raw material
- crystal sic
- sic
- production
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract 18
- 239000002994 raw material Substances 0.000 title claims abstract 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052799 carbon Inorganic materials 0.000 claims abstract 6
- 239000002245 particle Substances 0.000 claims abstract 4
- 239000011163 secondary particle Substances 0.000 claims abstract 4
- 239000002002 slurry Substances 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims abstract 2
- 239000011164 primary particle Substances 0.000 claims abstract 2
- 239000002904 solvent Substances 0.000 claims abstract 2
- 239000004575 stone Substances 0.000 claims 2
- 241000239226 Scorpiones Species 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000001694 spray drying Methods 0.000 abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006216748A JP2008037720A (ja) | 2006-08-09 | 2006-08-09 | 単結晶ＳｉＣ製造用原料、その製造方法、この原料を用いた単結晶ＳｉＣの製造方法、及び、その製造方法により得られる単結晶ＳｉＣ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200813269A true TW200813269A (en) | 2008-03-16 |
Family
ID=39032854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96116097A TW200813269A (en) | 2006-08-09 | 2007-05-07 | Raw material for single crystal SIC production, production method thereof, production method of single crystal SIC using the raw material, and single crystal SIC obtained by the production method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008037720A (ja) |
| TW (1) | TW200813269A (ja) |
| WO (1) | WO2008018320A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008222489A (ja) * | 2007-03-13 | 2008-09-25 | Shin Etsu Chem Co Ltd | 炭化珪素製造用原料に用いるスラリ、二次粒子及び単結晶炭化珪素の製造方法 |
| JP6443103B2 (ja) * | 2015-02-13 | 2018-12-26 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
| JP6597873B2 (ja) * | 2018-11-22 | 2019-10-30 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6122000A (ja) * | 1984-07-06 | 1986-01-30 | Kanebo Ltd | 炭化珪素ウイスカ−の製造法 |
| JPH03215399A (ja) * | 1990-01-18 | 1991-09-20 | Asahi Chem Ind Co Ltd | 繊維状窒化アルミニウムの製造方法 |
| JPH04270199A (ja) * | 1991-02-25 | 1992-09-25 | Tokai Carbon Co Ltd | 炭化珪素ウイスカーの製造方法 |
| JP3505597B2 (ja) * | 2000-02-23 | 2004-03-08 | 日本ピラー工業株式会社 | 炭化珪素単結晶 |
| JP2004099414A (ja) * | 2002-09-13 | 2004-04-02 | National Institute Of Advanced Industrial & Technology | 炭化珪素単結晶の製造方法 |
-
2006
- 2006-08-09 JP JP2006216748A patent/JP2008037720A/ja active Pending
-
2007
- 2007-05-07 TW TW96116097A patent/TW200813269A/zh unknown
- 2007-07-31 WO PCT/JP2007/064967 patent/WO2008018320A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008018320A1 (fr) | 2008-02-14 |
| JP2008037720A (ja) | 2008-02-21 |
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