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WO2008018320A1 - MATÉRIAU DESTINÉ À LA FABRICATION DE MONOCRISTAL SiC, PROCÉDÉ DE FABRICATION DU MATÉRIAU, PROCÉDÉ DE FABRICATION DE MONOCRISTAL SiC EN EMPLOYANT LE MATÉRIAU, ET MONOCRISTAL SiC OBTENU PAR LE PROCÉDÉ DE FABRICATION DE MONOCRISTAL SiC - Google Patents

MATÉRIAU DESTINÉ À LA FABRICATION DE MONOCRISTAL SiC, PROCÉDÉ DE FABRICATION DU MATÉRIAU, PROCÉDÉ DE FABRICATION DE MONOCRISTAL SiC EN EMPLOYANT LE MATÉRIAU, ET MONOCRISTAL SiC OBTENU PAR LE PROCÉDÉ DE FABRICATION DE MONOCRISTAL SiC Download PDF

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Publication number
WO2008018320A1
WO2008018320A1 PCT/JP2007/064967 JP2007064967W WO2008018320A1 WO 2008018320 A1 WO2008018320 A1 WO 2008018320A1 JP 2007064967 W JP2007064967 W JP 2007064967W WO 2008018320 A1 WO2008018320 A1 WO 2008018320A1
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Prior art keywords
single crystal
crystal sic
raw material
sic
particles
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Ceased
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PCT/JP2007/064967
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English (en)
Japanese (ja)
Inventor
Masanori Ikari
Toru Kaneniwa
Takao Abe
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Publication of WO2008018320A1 publication Critical patent/WO2008018320A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion

Definitions

  • the present invention relates to a raw material for producing single crystal SiC used when producing single crystal SiC used as a semiconductor device material or LED material.
  • Single crystal SiC (silicon carbide) has a large dielectric breakdown electric field with large crystal binding energy
  • this single crystal SiC is manufactured by using the Rayleigh method in which SiC powder is sublimated in a graphite crucible, and the single crystal SiC is recrystallized on the inner wall of the graphite crucible.
  • An improved Rayleigh method in which the SiC seed single crystal is placed in the part to be recrystallized by optimizing the temperature distribution and epitaxially recrystallized, and the gas source is transported onto the heated SiC seed single crystal by the carrier gas and crystallized.
  • CVD method for epitaxial growth while chemically reacting on the surface, proximity sublimation method for epitaxially recrystallizing SiC powder on SiC seed single crystal with SiC powder and SiC seed single crystal in proximity in a graphite crucible, etc. See Chapter 4 of Non-Patent Document 1).
  • each of these single-crystal SiC production and synthesis methods is considered to have problems.
  • the Rayleigh method can produce and synthesize single-crystal SiC with good crystallinity, crystal growth is based on spontaneous nucleation, so shape control and crystal surface control are difficult, and large-diameter wafers can be obtained. There is a problem that can not be.
  • the improved Rayleigh method can obtain a large-diameter single crystal SiC ingot at a high speed of several hundreds of 11 m / h, it has a problem that a large number of micropipes are generated in the crystal because it grows in a spiral shape. There is.
  • the types, particle sizes, particle shapes, etc., of silicon dioxide ultrafine particles and carbon ultrafine particles, which are raw materials used for producing single crystal SiC are disclosed. Is not particularly limited. However, these generally available ultrafine particles have a very small primary particle size (average particle size of lOOnm or less), so the bulk density is small and the shape is not substantially spherical. For this reason, even if an attempt is made to transport a mixture of these raw materials onto the SiC seed single crystal with an inert carrier gas as it is, there is a tendency to easily block the pipe in the middle.
  • Patent Document 1 Japanese Patent No. 3505597
  • Non-patent document 1 edited by Hiroyuki Matsunami, “Semiconductor SiC technology and application”, Nikkan Kogyo Shimbun (published in the first edition in March 2003)
  • the present invention has been made to solve the above-described problems, and the object of the present invention is to allow good transport from the outside of the crucible without clogging onto the SiC seed single crystal in the crucible.
  • Providing raw materials for producing single-crystal SiC providing the production method, providing a method for epitaxially growing high-quality single-crystal SiC using the raw materials, and the resulting high
  • the goal is to provide quality single crystal SiC.
  • Raw materials for production
  • a process for producing a slurry comprising silica particles, carbon particles and a solvent, and a spray drying process for producing secondary particles containing silica and carbon by spray drying and granulating the slurry in a vaporizer A method for producing a raw material for producing single crystal SiC according to (1),
  • a single crystal SiC manufacturing method including a growth step of growing single crystal SiC by
  • the raw material for producing single crystal SiC of the present invention can be stably conveyed by a carrier gas. Also, by producing single crystal SiC using this raw material, a micropipe can be obtained. The ability to stably manufacture and provide high-quality single crystal SiC with reduced defects and impurity concentrations.
  • FIG. 1 is a conceptual diagram showing an example of a spray drying apparatus used for producing a raw material for producing single crystal SiC of the present invention.
  • FIG. 2 is a cross-sectional view showing an example of an apparatus for producing single crystal SiC of the present invention.
  • the first aspect of the present invention is a secondary particle consisting essentially of primary particles of silica particles and carbon particles, and the secondary particle shape has a diameter of! -90 m.
  • the present invention relates to a raw material for producing single crystal SiC characterized by being substantially spherical.
  • the composition of the raw material for producing single crystal SiC used in the present invention includes silica particles and carbon. Particles can be suitably used. These silica particles and carbon particles can be appropriately selected, and both the silica particles and the carbon particles have an average primary particle size of S5 nm to lOOnm (also referred to as “5 to 100 nm”). Fine particles are preferred. Ultrafine particles of 5 nm to 40 nm are more preferred. Ultrafine particles of 20 nm or less are more preferred. Ultrafine particles of 5 to 20 nm are particularly preferred. In addition, the purity is preferably as high as possible.
  • silica for example, high purity silica (smell silica, fomed silica) obtained by a flame hydrolysis method is preferred, and as the carbon, high purity acetylene black, which is preferred to be carbon black, is more preferably used.
  • the average particle diameter of the primary particles can be determined by observation with an electron microscope.
  • “Substantially” means to exclude minor components such as solid dope components in addition to silica and carbon! /.
  • the raw material for producing single crystal SiC is secondary particles in which the silica particles and carbon particles are aggregated together, and the secondary particles have a diameter of about 1 ⁇ m or more and 90 m or less.
  • the shape is almost spherical.
  • Diameter force “about 1 m or more and 90 m or less” means 90 parts by weight or more, preferably 95 parts by weight or more, more preferably total weight part force of 100 parts by weight of the secondary particles produced. Say above 90 H m or less. It can be determined by classification with a sieve or the like that it is about 1 m to 90 ⁇ m. In addition, the particle size range and weight average diameter of secondary particles can be determined by measuring using a commercially available particle size meter.
  • substantially spherical means a shape close to a sphere including a true sphere.
  • a part of the spherical surface is formed. It also includes the shape of a depressed sphere or a shape with a whisker-like protrusion on the spherical surface.
  • the silica particles and the carbon particles having the finer average particle diameter are mixed in advance than the silica particles and the carbon particles are secondary particles having the above particle diameter and shape. Then, it is preferable that the particles are aggregated together by the production method (2) and processed into secondary particles having the above-mentioned particle diameter and shape.
  • the raw material for producing single-crystal SiC of the present invention is a substantially spherical secondary particle having a diameter of 1 [I m or more and 90 m or less], so that it flows more easily in the pipe in the middle and is clogged. No failure will occur.
  • the spray drying method described in detail below can be used to suppress the particle size distribution narrowly and to achieve a high purity and a porous finish. Therefore, in the single-crystal SiC manufacturing process using the raw material, it has the ability to manufacture high-purity and high-quality single-crystal SiC in addition to excellent fluidity and pipe clogging defects. I'll do it.
  • the second aspect of the present invention includes a step of producing a slurry comprising silica particles, carbon particles and a solvent, and spray drying and granulating the slurry in an evaporator to produce a slurry.
  • the method for producing a raw material for producing single crystal SiC according to (1) which includes a spray drying process for producing secondary particles containing force and carbon.
  • the solvent is preferably a volatile solvent.
  • the method of processing into secondary particles having the above particle diameter and shape is not particularly limited as long as the particle size distribution is sharp and the method is controlled with high purity.
  • the present inventors examined various granulation methods shown below. In other words, pulverization and granulation for pulverizing the aggregates of primary particles of silica and carbon, compression granulation for compressing powder in a mold on the surface of a rotating roll, and extruding a low-humidity particle mixture with a granulator. As a result of comparative examination of extrusion granulation, it was found that the spray-drying method based on spray-drying granulation is excellent from the viewpoint of small particle size range, narrow particle size distribution, and especially the small amount of impurities. However, the invention of a method for producing a raw material for producing single crystal SiC was completed.
  • the spray drying method is a granulation method based on spray drying and is known. After producing a slurry consisting essentially of silica particles, carbon particles, and a solvent, the slurry is sprayed by an atomizer that sprays the slurry, instantly dried in hot air in a drying chamber, and granulated to form a substantially spherical secondary. It can be recovered as particles.
  • the drying time is short and is a few seconds or less.
  • the “solvent” may be a volatile liquid, and may be water that does not have to dissolve silica or carbon.
  • Typical atomizers (spraying devices) for spraying slurry as droplets are nozzles and rotating disks (discs).
  • the nozzle includes a pressure nozzle.
  • an atomizer for a rotating disk can be used more preferably.
  • a rotating disc type atomizer In a rotating disc type atomizer, slurry is supplied to the central part of a disc that rotates at high speed and sprayed by centrifugal force.
  • a rotating disk (disk) type atomizer that rotates at high speed can use an air bearing that supports the load by lifting the rotating shaft with air pressure (see JP 10-118536 A). Increasing the rotation speed of the rotating disk can reduce the particle size of the secondary particles.
  • a spray dryer equipped with a rotating disk capable of high-speed rotation (5,000 to 40, OOOrpm) is commercially available from, for example, Okawara Chemical Corporation. Using a rotating disk rotated at high speed, substantially spherical silica'carbon secondary particles having a particle diameter of 1 to 90 m and containing 90% by weight or more of secondary particles can be produced.
  • FIG. 1 is a conceptual diagram showing an example of a spray-drying granulator used in the production method of the second invention.
  • the spray-drying granulator stores a slurry containing silica particles, carbon particles, and solvent power. It is sent to the atomizer 7, which is a spraying device, by the slurry feed pump 2 from the tank 1 force, sprayed in the hot air in the drying chamber 8, and instantly dried and granulated into secondary particles. Air is sent around the atomizer 7 by a blower 12.
  • a force S and a disk type nozzle that can select and use a known nozzle such as a pressure nozzle, a disk type nozzle, a two-fluid nozzle, and a pressure two-fluid nozzle are preferable.
  • the drying chamber 8 has a structure in which the upper part is a straight body part and the conical part is connected to the lower part.
  • a drying hot air inlet is provided in the upper part of the drying chamber 8, the air passing through the air filter 3 is heated by the air heater 5, and is supplied by the blower 4 as hot air through the hot air filter 6.
  • the drying chamber 8 is also provided with an exhaust line for exhausting hot air for drying, and connected to the exhaust fan 10 and the dust collector 11 through a cyclone 9 for collecting fine powder generated from the slurry.
  • the exhaust line can be used by appropriately selecting the top of the spray drying section, the side wall of the straight body section, a pipe inserted into the drying section, and the like.
  • an unillustrated removal loca provided at the bottom of the conical portion can be taken out.
  • a third aspect of the present invention is a susceptor in which a SiC seed crystal is fixed in a crucible equipped with a heating means, and a raw material for producing single crystal SiC from the outside.
  • Raw material supply And a raw material supply pipe for supplying the single crystal SiC manufacturing material described in (1) or the SiC manufacturing material manufactured by the manufacturing method described in (2) in the crucible in a high temperature atmosphere.
  • a step of growing the single crystal SiC by supplying to the surface of the SiC seed crystal or the growth layer surface of the single crystal SiC grown thereon.
  • the manufacturing temperature of the single crystal SiC is not particularly limited, and can be set as appropriate according to the size, shape, type, etc. of the target single crystal SiC, and the preferable manufacturing temperature is in the range of 1, 600-2, 400 ° C. For example, this temperature can be measured as the temperature outside the crucible.
  • the configuration of the single crystal SiC manufacturing apparatus used in the method for manufacturing single crystal SiC of the present invention is not particularly limited. That is, seed crystal size, crucible heating method, crucible material, raw material supply method, atmosphere adjustment method, growth pressure, temperature control method, etc., target single crystal SiC size, shape, type, type of raw material for single crystal SiC production It can be appropriately selected according to the amount and the like.
  • PID temperature control technology can be used for temperature measurement and temperature control.
  • the shape of the crucible used in the present invention is not particularly limited as to the outer shape, and can be appropriately selected according to the size and shape of the target single crystal SiC.
  • the material of the crucible is preferably made of graphite in consideration of the operating temperature range.
  • the shape of the susceptor holding the SiC seed crystal is not particularly limited, and can be appropriately selected according to the size and shape of the target single crystal SiC.
  • the material of the susceptor is preferably made of Graphite, taking into consideration the operating temperature range.
  • the shape of the raw material supply pipe for supplying the raw material for producing single crystal SiC is not particularly limited, and can be appropriately selected according to the size and shape of the target single crystal SiC. However, it is preferable that the material of the supply pipe is made of graphite in consideration of the operating temperature range.
  • the raw material supply pipe may be disposed at right angles or obliquely so as to face the susceptor to which the SiC seed crystal, preferably the SiC seed single crystal is fixed, in the crucible.
  • the configuration of the single crystal SiC manufacturing apparatus used for manufacturing single crystal SiC using the raw material for manufacturing single crystal SiC of the present invention is not particularly limited.
  • the crucible size, heating method, material, raw material supply method, atmosphere adjustment method, temperature control method, etc. depend on the size, shape and type of the target single crystal SiC, the type and amount of raw material for manufacturing single crystal SiC, etc. Can be selected as appropriate.
  • a susceptor to which an SiC seed crystal is fixed and an external device for producing single-crystal SiC In the first invention of the method for producing single-crystal SiC using the raw material for producing single-crystal SiC (third invention), a susceptor to which an SiC seed crystal is fixed and an external device for producing single-crystal SiC.
  • the raw material supply pipe for supplying the raw material is preferably arranged so that the opposite edge is arranged at a right angle or obliquely in the crucible. More specifically, the normal direction of the surface holding the SiC seed crystal at the lower end of the susceptor can be freely set from approximately parallel to the vertical direction of the susceptor to a maximum 45 ° inclination.
  • the crucible is heated in the arrangement state of the susceptor and the raw material supply pipe as described above, and the single crystal SiC manufacturing raw material is continuously supplied to the SiC seed crystal surface through the raw material supply pipe while the crucible is in a high temperature atmosphere.
  • the SiC single crystal is grown by growing SiC.
  • the mixing ratio and the (continuous) supply amount of silica particles and carbon particles, which are raw materials for single crystal SiC production continuously supplied during the production of single crystal SiC, are not particularly limited, but the silica / carbon ratio is 1. 5 to 5 (weight ratio) is typical, and a desired blending ratio and supply amount according to the production conditions can be appropriately selected.
  • the raw material for producing single crystal SiC may contain a small amount of other components as required.
  • Supply of the raw material for producing the single crystal SiC onto the SiC seed crystal is preferably a continuous supply method without interruption.
  • a continuous powder transport such as a commercially available powder feeder is preferable. What can be mentioned.
  • the raw material for producing single crystal SiC is substantially spherical. It is preferable to use only those that have been processed.
  • the raw material for producing single crystal SiC is supplied together with a carrier gas.
  • the carrier gas include inert carrier gases such as argon gas and helium gas. Among these, it is preferable to use argon gas as a carrier gas.
  • doping into single crystal SiC it may be mixed as a solid source with the raw material for manufacturing single crystal SiC, or as a gas source in the atmosphere in single crystal SiC manufacturing equipment,
  • the doping component may be mixed.
  • N, A1 (CH), B during growth It is possible to control valence electrons by doping impurities such as H.
  • the SiC seed crystal used in the present invention is preferably in the form of a wafer, preferably a SiC seed single crystal.
  • the type, size, and shape of the SiC seed single crystal wafer are not particularly limited, and can be appropriately selected depending on the type, size, and shape of the target single crystal SiC.
  • a SiC single crystal wafer obtained by pretreating a SiC single crystal obtained by the improved Rayleigh method as necessary can be suitably used.
  • a seed single crystal both a just substrate and an off-angle substrate can be used, and a just-surface Si surface substrate and an (OOOl) Si surface substrate having an off angle of several degrees can be exemplified
  • a fourth aspect of the present invention (fourth invention) relates to a single crystal SiC produced by the method of the third invention.
  • This SiC single crystal can be of a high quality with a low defect density almost equal to that of micropipes (MP).
  • Carbon (Denka Black manufactured by Denki Kagaku Co., Ltd .; average primary particle size 35 nm) and silica (Aerosil 380 manufactured by Nippon Aerosil Co., Ltd .; average primary particle size 2 Onm) are mixed as raw materials for single crystal SiC production. Then it was dissolved in pure water and turned into a slurry. The silica / carbon ratio (weight ratio) was 1.7.
  • the obtained slurry was processed into a substantially spherical granulated powder using a spray dryer (FOC-16, manufactured by Okawara Chemical Co., Ltd.).
  • the shape of the raw material was “substantially spherical” as described above.
  • the particle size at this time was 1 m or more and 90 m or less.
  • the concentration of metal impurities in the obtained raw material was less than sub ppm.
  • the raw material thus obtained was filled in an in-house powder feeder.
  • This powder feeder was connected to the raw material supply pipe line of the single crystal SiC manufacturing equipment.
  • Fig. 2 shows the configuration of the single crystal SiC manufacturing apparatus 30.
  • the single crystal SiC manufacturing apparatus 30 employs a high frequency induction heating method, and a carbon-made cylindrical crucible 32 (diameter: 100 mm, height: 150 mm) is disposed in a water-cooled sealed chamber 31, and the water-cooled sealed chamber is provided.
  • a high frequency induction heating coil 33 is arranged outside 31.
  • the cylindrical crucible 3 A susceptor 35 for holding the SiC seed crystal 34 is inserted through the upper portion of 2. Further, the susceptor 35 extends to the outside of the cylindrical crucible 32, and can be rotated about the central axis of the susceptor by a rotation mechanism (not shown).
  • a powder feeder 37 for supplying the granulated raw material for producing the single crystal SiC, and a raw material supply pipe 36 connected to the outside of the high-frequency induction heating furnace by a pipe are the bottom surface of the cylindrical crucible 32 opposite to the susceptor 35. Extends into the cylindrical crucible 32 from the susceptor 35. The raw material supplied through the raw material supply pipe 36 is supplied to the surface of the seed crystal 34 or the surface of the growth layer 40 of the single crystal SiC grown thereon.
  • the raw material storage tank 39 is supplied to the pipe 36 'via the control valve 38, and the granulated raw material is supplied from an inert carrier gas supply source (not shown).
  • the gas A is supplied into the cylindrical crucible 32 through the raw material supply pipe 36.
  • the raw material supply amount is controlled by a flow rate adjusting mechanism using a control valve 38 in the powder feeder 37.
  • the high-frequency induction heating furnace of the single-crystal SiC manufacturing apparatus 30 can be controlled by a vacuum exhaust system and a pressure control system (not shown), and includes an inert gas replacement mechanism (not shown).
  • the position relationship between the susceptor and the raw material supply pipe is a vertically-facing relationship. It is also possible to arrange the supply pipe and the susceptor obliquely or at right angles to each other. A SiC seed single crystal wafer is fixed to the tip of the susceptor.
  • the single crystal SiC manufacturing apparatus shown in Fig. 2 was used, and single crystal SiC manufactured by the modified Rayleigh method was used as the SiC seed single crystal wafer.
  • the surface conditions were just surface and Si surface.
  • the inside of the high frequency induction heating furnace was vacuum evacuated, the inside of the high frequency induction heating furnace was replaced with an inert gas (high purity argon).
  • the high-frequency induction heating coil was heated and heated until the temperature outside the above-mentioned carbon cylindrical crucible was in the range of 2,150-2, 350 ° C.
  • the susceptor on which the SiC seed single crystal wafer was fixed was rotated at a rotation speed of 0 to 20 rpm.
  • the inert carrier gas (high-purity argon) connected to the powder feeder is flowed, and the raw material for producing the single crystal SiC is arranged in an opposing portion in the cylindrical crucible through the inside of the supply pipe.
  • the single crystal SiC was manufactured by continuously supplying the raw material for manufacturing the single crystal SiC until C had a desired size (2 inches X lmm).
  • the optimal growth temperature varies depending on the atmospheric pressure, the raw material mixing ratio for single crystal SiC production, the type of SiC single crystal wafer, and other factors.
  • Table 1 shows the results of single crystal SiC production under each of the above conditions.
  • Comparative Example 1 where spray-drying processing was not applied from the table, the raw material clogged in the piping immediately after the raw material supply started, and the supply onto the SiC seed single crystal wafer was intermittently irregular. It became a state.
  • spray drying was performed, a high-quality large-sized single crystal SiC having a low impurity concentration and a low defect density almost equal to that of the micropipe (MP) could be produced without delay.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un matériau destiné à la fabrication du monocristal SiC qui peut être transporté de préférence dans un germe de monocristal SiC dans un creuset sans provoquer d'obstructions, et un procédé de fabrication du matériau. Le matériau destiné à la fabrication du monocristal SiC consiste en des particules secondaires se composant essentiellement de particules primaires de silice et de carbone, et les particules secondaires sont essentiellement sphériques et ont un diamètre de 1 μm à 90 μm. Ce matériau des particules secondaires peut être fabriqué de telle sorte qu'il est fabriqué une bouillie comprenant des particules de silice, des particules de carbone et un solvant, puis la bouillie est granulée par séchage par pulvérisation dans un matériel d'évaporation. Le monocristal SiC fabriqué en employant ce matériau présente une haute qualité, avec peu de microtuyaux (MP) et une faible fréquence des défauts.
PCT/JP2007/064967 2006-08-09 2007-07-31 MATÉRIAU DESTINÉ À LA FABRICATION DE MONOCRISTAL SiC, PROCÉDÉ DE FABRICATION DU MATÉRIAU, PROCÉDÉ DE FABRICATION DE MONOCRISTAL SiC EN EMPLOYANT LE MATÉRIAU, ET MONOCRISTAL SiC OBTENU PAR LE PROCÉDÉ DE FABRICATION DE MONOCRISTAL SiC Ceased WO2008018320A1 (fr)

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JP2006216748A JP2008037720A (ja) 2006-08-09 2006-08-09 単結晶ＳｉＣ製造用原料、その製造方法、この原料を用いた単結晶ＳｉＣの製造方法、及び、その製造方法により得られる単結晶ＳｉＣ
JP2006-216748 2006-08-09

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008222489A (ja) * 2007-03-13 2008-09-25 Shin Etsu Chem Co Ltd 炭化珪素製造用原料に用いるスラリ、二次粒子及び単結晶炭化珪素の製造方法
WO2016129297A1 (fr) * 2015-02-13 2016-08-18 住友電気工業株式会社 Procédé de production de monocristal de carbure de silicium
JP2019052085A (ja) * 2018-11-22 2019-04-04 住友電気工業株式会社 炭化珪素単結晶の製造方法

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JPH03215399A (ja) * 1990-01-18 1991-09-20 Asahi Chem Ind Co Ltd 繊維状窒化アルミニウムの製造方法
JPH04270199A (ja) * 1991-02-25 1992-09-25 Tokai Carbon Co Ltd 炭化珪素ウイスカーの製造方法
JP2004099414A (ja) * 2002-09-13 2004-04-02 National Institute Of Advanced Industrial & Technology 炭化珪素単結晶の製造方法

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JPS6122000A (ja) * 1984-07-06 1986-01-30 Kanebo Ltd 炭化珪素ウイスカ−の製造法
JPH03215399A (ja) * 1990-01-18 1991-09-20 Asahi Chem Ind Co Ltd 繊維状窒化アルミニウムの製造方法
JPH04270199A (ja) * 1991-02-25 1992-09-25 Tokai Carbon Co Ltd 炭化珪素ウイスカーの製造方法
JP2004099414A (ja) * 2002-09-13 2004-04-02 National Institute Of Advanced Industrial & Technology 炭化珪素単結晶の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008222489A (ja) * 2007-03-13 2008-09-25 Shin Etsu Chem Co Ltd 炭化珪素製造用原料に用いるスラリ、二次粒子及び単結晶炭化珪素の製造方法
WO2016129297A1 (fr) * 2015-02-13 2016-08-18 住友電気工業株式会社 Procédé de production de monocristal de carbure de silicium
JP2016147790A (ja) * 2015-02-13 2016-08-18 住友電気工業株式会社 炭化珪素単結晶の製造方法
CN107208309A (zh) * 2015-02-13 2017-09-26 住友电气工业株式会社 碳化硅单晶的制造方法
JP2019052085A (ja) * 2018-11-22 2019-04-04 住友電気工業株式会社 炭化珪素単結晶の製造方法

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