TW200813212A - Chemical solution, and method of processing substrate through the use of the same - Google Patents

Abstract

There is provided a chemical solution used for removal of at least an inhibition layer formed at a surface of an organic film pattern formed on a substrate, the inhibition layer being comprised of at least one of an alterated layer formed by alteration of a surface of the organic film pattern, and a deposition layer formed by deposition of deposits on a surface of the organic film pattern. The chemical solution is comprised of aqueous solution containing a first component comprised of at least one of hydroxylamine derivative and hydrazine derivative, and second component having a function of development.

Description

200813212 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of processing a substrate such as a semiconductor substrate and a liquid crystal substrate, and a chemical solution used in the method. [Prior Art] The material path is usually, for example, by a semiconductor wafer or a liquid crystal display

An organic thin film pattern is formed on the substrate of Li or other substrate, and then the film under the film pattern is produced, that is, the substrate having the organic film pattern is used as a photomask to form a pattern on the underlying film. After the lower film is patterned, the organic film pattern is removed. U.S. Patent No. 8-231-3 (published in January 1976) discloses: a pattern of a substrate for fabricating a wire loop with two dielectric breakdown resistors = formation of an organic thin film pattern on a substrate (referred to in the patent document) The anti-silver organic film pattern is used as a mask to describe the 4 films (single layer or double layer) disposed under the organic film pattern, and the organic film pattern is formed under the shadow, and then over-developed or changed: into a pattern, and then The film pattern is a mask to remove the organic film pattern in the lower film cone=pattern organic, and formed into a pattern such as a cone or a step, and then the lower film is patterned. Then, in another step, the organic film pattern is removed. - (4) A method of processing a substrate, comprising the step of treating an organic thin film pattern by the above method. Japanese Patent No. 159292 discloses a step of treating an organic thin film pattern or additionally comprising mixing and deforming the organic thin film pattern, This 2ΐ34-9〇97-ρρ 5 200813212 This mouth and the organic film pattern changed to the county Π: Bie ^ ^ ^, due to the organic film pattern (special 疋 positive resistance pattern) and organic loss ^ ^ m ^ Η ^ Μ contact The cover (specifically, the 栻4 film pattern is exposed to the environment in which the gas solvent is formed) is mixed. The figure 7 shows an example of the above-mentioned Japanese version, which is disclosed in Japanese Patent No. 8-231-03. The method for processing the substrate includes: continuously replenishing the organic ruthenium film pattern, forming a pattern on the lower 4 film by an etching method, and re-developing a pattern formed by the lower film. The 相 phase pattern (anti-money pattern) is further advanced, such as As shown in Fig. 7 (b), a conductive film 102 is formed on the substrate ι, and then referred to as a "photoresist thin film," in the conductive film 102. The core is formed into an organic film 103 (the patent document is then sequentially The exposure step, the development step, and the pre-baking heating step are performed to convert the organic thin film into the starting organic thin film pattern 1〇4 as shown in the seventh β). Next, the organic thin film pattern 104 is used as a mask. The substrate (8) is engraved with the conductive film m, and the conductive film 1〇2 is formed as shown in Fig. 7(C). After redeveloping the organic thin film pattern 104, the second pre-baking step of adding the organic thin film pattern 104 is performed, and the organic thin film pattern 104 is formed into a second pattern, as shown in FIG. 7(D). . Cheng Di, then, using the re-formed organic film pattern 1G4 as a photomask, the thin crucible 102 reduces the thickness of the lightning-producing and anti-corrosion film 102 to a starting thickness of 1:7 (E) The conductive film 1〇2 does not have a stepped shape such that the conductive phase 102 does not have a vertically distributed or inverted tapered cross-sectional pattern. solid

2134-9097-PF 6 200813212 As shown in Figure 7(F), "Yes, no, remove the organic film pattern 104. The conductive film L. This patent No. 8~231 〇3 does not mention the surname. The substrate 101 is shown in Fig. 4 (the step shown in Fig. 7(8) is damaged, because the step is performed), which causes the starting organic thin film pattern layer to form a deformed layer on the organic thin film pattern m and/or Depositing both the deformed layer and/or the deposited layer formed on the pattern of the ruthenium film (hereinafter, this shadow, also the 2 spacer layer) suppresses the second appearance of the organic thin film pattern tm; as shown in the seventh (C) diagram The steps are the same as the steps shown in Figure 7(8). Therefore, the organic film is usually not completed smoothly. The second degree of development of the state organic thin film pattern 104 depends on the step of the barrier layer in the step shown in Fig. 7(8) and the step shown in Fig. 7(c). The chemical solution used in the wet money engraving... The temperature at the time of engraving is greatly affected by the state of the barrier layer. +Hi Hi, right in the step shown in Figure 7 (8) and i body 2 in Figure 7 (G) = step is dry (four) 'then dry stencils are used when the order is large The pressure and the discharge process of the generated gas are in the state of the barrier layer of the shirt, the organic film is formed by ionization or free radical gas, and the organic I produced by the ionization or radical gas: the *force* pattern of the second generation of the generated gas Zhao Caused by physical impact, the second use of the lithography will not affect the organic film, so the use of wet etching on the organic film pattern

2134-9097-PF 7 200813212 The damage is less dry-etched, and the barrier layer is also less wet-etched than dry. In the development of the thin film pattern, if the organic thin film is patterned by the barrier layer, the second development/development of the organic thin film pattern may not be smooth, and the uneven pattern of the underlying film may be uneven: development will be uneven, [Summary of the Invention] In view of the above problems, the present invention is disclosed, whereby the second or subsequent "hurry substrate" can be completed. (4) Development Process of Film Pattern The invention is also disclosed in the above method, which is organic on a semiconductor substrate, a liquid crystal display film pattern, and is processed on an organic film to form an organic film pattern.酉 has been placed in the same way, when the organic film g 2, using this organic film pattern 'an example 4 film pattern is made of insulating material can be used as an insulating film pattern. Organic 4 film pattern The first part of the invention discloses a chemical solution for removing at least a barrier layer formed on the surface of the film pattern, which is formed by blocking the surface change of the organic thin enamel pattern; The main ingredient is one of the sedimentary layers that are formed at least and widely formed. The chemical solution contains the first component of the hydrazine derivative and the hydrazine compound, and has a developing function. The second component. :Exposing: a method for manufacturing an organic thin film pattern by using a chemical solution, the method comprising: removing the barrier layer of the surface of the organic thin film pattern 2134-9097-pf 200813212 formed on the substrate by 5 ϋ ϋ , SI ι_ &quot; And the barrier layer comprises at least one of a main step layer of the organic thin film pattern: a film pattern of the machine film, and a deposition of the deposit on the organic film pattern, and the chemical solution is used for the removal step, and the 'money The pre-solution of one of the deposited hydroxylamine derivative and the hydrazine derivative formed by the surface contains a second component having at least a developing function. An aqueous solution of an ingredient, and a second part of the invention discloses an organic thin film pattern formed on the treatment substrate, and at least removed, the method comprises a barrier layer on the substrate surface, the barrier layer comprises at least a deformation layer formed by the film pattern sheet; And one of the deposited layers of the surface of the deposit pattern of the deposit 4, at least the surface of the pattern is formed; the method of removing the barrier layer also exposes the method for processing the substrate, including, in order: 7 liquid. The first step of forming the organic thin film pattern is formed on the right soil plate, and the main 々m layer for processing the organic thin film pattern includes at least the step deformed layer due to the surface change of the organic thin film pattern, and the deposit is deposited on the surface of the organic thin film pattern. Forming: at least the barrier layer is removed from the layer using the chemical solution described above. A third aspect of the present invention discloses a method of fabricating an element having a substrate, comprising the above method of processing a substrate to fabricate one of a display element having a substrate and a semiconductor element having the substrate. The above and other objects, features, and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 200813212 [Embodiment] Hereinafter, embodiments according to the present invention will be described with reference to the drawings. [First Embodiment] The state of the individual steps is consistently applied to the column. The method shown in Fig. 7 is a second development step (overexposure) performed between the step shown in Fig. 7(c) and the step shown in Fig. 7(D), the method of the first embodiment. Unlike the method shown in Fig. 7, the removal step and the second development step are both performed between the steps shown in Fig. 1(C) and the steps shown in the i(d) diagram. First, as shown in Fig. 1(A), a conductive film is formed on the substrate 1, and then an organic film 3 is formed on the conductive film 2. Next, an exposure step, a development step, and (4) a dry heating step are sequentially performed on the organic film 3 to pattern the organic film 3 to change the organic film 3 into the starting organic film pattern 4 as shown in Fig. 1 (8). The second starting organic film pattern 4 is a conductive film 2 which is engraved on the substrate 1 and formed into a first pattern, as shown in FIG. 1(c), specifically, electrically conductively covered. Part of the thin organic film pattern 4 is trapped in the thirst or dry money, and the pattern shown by the conductive thin 1 (C) is removed by dry etching. The gentleman who is made into the pattern of the second conductive film 2 is to form a barrier layer, and the organic film pattern 4 is formed as a barrier layer, and the barrier layer includes at least a deformation sound formed by the change of the seeding, one, / , pattern 4 surface * ^ ^ L and sediment deposited in organic thin

One of the deposited layers formed on the surface. The film pattern 4 2134-9097-PF 10 200813212: using the chemical solution of the first embodiment to remove the barrier layer to selectively remove the barrier layer, so that the region without the barrier layer in the broadcast pattern 4 is presented, # The machine pattern 4 筮 % 然后 然后 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机The initial organic film, that is, the organic film pattern 5 having a new appearance (pattern), which is different from the machine film pattern. In other words, the organic film pattern 4 is processed to change the organic film pattern into a new organic film pattern 5, and The area of the 4th turn 4 of the guide and circle case is also smaller. / The organic film on the top is as described above. 'Partial organic film pattern 4 is reduced in the main step. The organic film pattern 4 is completely reduced. Skin removal' film 2 = two! The machine film pattern 5 is a reticle-etched thin; and the thin film of the conductive film 2 not covered by the organic film pattern 5 is as shown in Fig. 1(E), for example, the turnout of the turnout Change ^ ^ . The thick film of the conductive enamel film 2 after the money is the original half of the income Conductive shape. /Special film 2 has a step-like cross-sectional view. Next, as shown in Fig. UF), the organic film pattern is removed. Since the conductive film 2 has a stepped profile, the conductive film 2 does not have a vertical shape. a cross-sectional pattern of the distribution or an inverted cone-shaped cross-sectional pattern. The chemical solution used in the removal step will be described below. The chemical solution used in the removal step of the first embodiment comprises at least a base (IV) biological and anthracene derivative. a first component aqueous solution and a second component having a developing function. In the first embodiment, the hydroxylamine derivative contained in the W, &gt;

2134-9097-PF 200813212 [(R!-)(R2-)]N0H, wherein each of Ri and R2 is a ci to C4 alkyl or a transalkyl group, and the hydroxylamine derivative is preferably at least a hydroxylamine. And one of N,N-diethyltransamine. The hydrazine derivative contained in the chemical solution in the first embodiment is [(L-)(R2-)]NN[(-R3)(-R0], wherein each of Ri, r2, ^ and hydrazine is a hydrogen atom, respectively. And one of a mercapto group, an ethyl group and a phenyl group, and the anthracene derivative is preferably at least one of hydrazine, methyl hydrazine, 1,1-dimercaptopurine and phenyl hydrazine. The chemical solution solution in the first embodiment Preferably, the second component contained at least one of tetrabasic ammonium hydroxide, metal hydroxide, and carbonic acid. The tetraalkylammonium hydroxide defined in the second component is [(UO^-KRs -) ( R4_)]N+〇r, wherein each of R1, R2, R and R4 is a C1 or a transalkyl group of C1 to C4, respectively, and the tetraalkylammonium hydroxide is preferably at least tetramethylammonium hydroxide or hydrogen. The alkali metal hydroxide as defined in the second component of tetraethylammonium oxide, choline and monomethyl bis(2-ylethylethyl) hydroxide is preferably at least sodium hydroxide and potassium hydroxide. 1. The metal of the first component is preferably at least sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate. The first component of the chemical solution in the first embodiment is preferably the same. Jie于〇. Within the range of 5 to 30% by weight, if the content of the first component in the chemical solution is X% by weight, and X is less than 〇·5, or γ% by weight, and Υ is greater than 30, then the deformation Outside the layer, part of the organic film pattern is also removed. The content of the second component in the chemical solution in the first embodiment is preferably in the range of 2134-9097-PF 12 200813212 in the range of 2 to 10% by weight, If the content of the second compound/knife in the chemical solution is X% by weight and the enthalpy is less than 〇·2, the chemical solution cannot be removed from the barrier layer formed on the surface of the organic film pattern, and if the chemical/liquid mixture is the first The content of the two components is γ% by weight, and Υ is greater than i 0, and part of the organic film pattern is removed in addition to the deformed layer. For example, in the chemical solution of the first embodiment, the hydroxylamine derivative is preferably at least Containing [(m)], wherein each of 1 and r2 is independently a C1 to C4 alkyl or hydroxyalkyl group, a hydroxylamine and one of n, n-diethylhydroxylamine, and the anthracene derivative preferably contains at least [ (Ri-)(R2-)]NN[(-R3)(-R4)], /, every Rl, R2, R3 and R4 are One of a hydrogen atom, a sulfhydryl group, an ethyl group and a phenyl group, an anthracene, a fluorenyl hydrazine, a 1, a dimethyl hydrazine and a phenyl hydrazine, and the content of the first component in the chemical solution is preferably 0. In the range of 5 to 30% by weight, for example, in the chemical solution of the first embodiment, the second component is preferably up to = 7 hydrogen containing the sulphuric acid hydroxide, the hydroxide metal and the carbonic acid metal. The oxidized tetraalkyl group is [(R1_)(R2—)(R3-)(R4-)]N+0H—, wherein each - Ri, R" 1?3 and r4 are C1 to C4 alkyl or hydroxy groups, respectively. An alkyl group, or at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, chlorination, and oxychloride: methylbis(2-hydroxyethyl)ammonium, the alkali metal hydroxide containing at least sodium hydroxide And the hydroxide, the carbonic acid test metal contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and hydrogen carbonate, and the content of the second component in the chemical solution is preferably 0.21% by weight and 100% by weight. In the range. For example, in the chemical solution of the first embodiment, it is preferred that the _ group amine derivative contains at least [(R1_)(R2_)]N0H, wherein each 1 and: 2134-9097-PF 13 200813212 are respectively Cl One of the bases of the C4 or the base group, the base amine and the n, an anthracene derivative contains at least [(L-)(R2-)]NN[(-R3)(-RO], wherein Each of L, r2, hydrazine and R4 is a hydrogen atom, one of a methyl group, an ethyl group and a phenyl group, one of hydrazine, a hydrazine, a hydrazine, a dimethyl hydrazine and a phenyl hydrazine, and a hydroxylamine in a chemical solution. The content of the derivative and/or the hydrazine derivative is preferably in the range of 〇·5 to 30% by weight. The second component contains at least one of a tetraalkylammonium hydroxide, a metal hydroxide, and an alkali metal carbonate. The tetraalkylammonium oxide is [(L-)(R2-)(R3-)(R4-)]Ν+0Η-' wherein each R1, R" is only 3 and 匕 is a C1 to C4 alkyl or hydroxy group, respectively. An alkyl group, or at least containing tetrahydrogen hydroxide, tetraethyl hydrazine, bile, and dinonyl bis(2), one of which has at least sodium hydroxide and hydroxide Potassium carbonate test metal contains at least sodium carbonate, The content of the second component in the chemical solution is preferably in the range of U to 10% by weight. In the chemical solution of the first embodiment, the organic thin film pattern is used. In addition to the change: the outer part of the layer is preferably mixed at a speed less than or equal to the speed of each minute: less than or equal to 100 每 per minute, especially less than or; at the speed of 50 每 per minute Good, with the round order to recognize $ ώ ^ 疋 and take the speed of this δ and 疋, after the removal step is completed 'Because the residual amount of the organic film pattern 4 is enough for the organic film pattern 4 In the chemical solution of the embodiment, the ratio of V1/V2 is preferably greater than 2 V9, ··5, wherein V1 is the mixing speed of the deformed layer (or barrier layer), except for the deformation of the organic thin film pattern. Mixing speed of the outer layer

2。 The ratio of the ratio of vi / V2 is preferably less than or equal to 5.0. In the chemical solution of the first embodiment, the ratio of VI/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1 〇〇〇), wherein VI is the mixing speed of the deformed layer (or barrier layer), And V2 is a mixing speed of the organic thin film pattern except for the portion of the deformed layer, and the mixing speed of the organic thin film pattern except for the portion of the deformed layer is less than or equal to 1 〇〇〇A per minute. In the chemical solution of the first embodiment, the ratio of VI/V2 is preferably greater than or specific to 0.5 (for example, less than or equal to 1 Å), and the mixing speed of the organic thin film pattern except for the portion of the deformed layer. Less than or equal to 1 每 per minute. In the chemical solution of the first embodiment, the ratio of VI/V2 is preferably greater than or equal to 0.5 (for example, less than or equal to 1000), and the mixing speed of the organic thin film pattern except for the portion of the deformed layer is less than or equal to 5 per minute. 〇a. The chemical solution of the first embodiment preferably has the function of developing the organic thin film pattern 4. The tetraalkylammonium hydroxide in the chemical solution of the first embodiment preferably contains a component having a function of developing the organic thin film pattern 4. The barrier layer formed on the surface of the organic thin film pattern 4 at the stage shown in Fig. 1(c) will be described below. The barrier layer prevents the organic thin film pattern 4 from being redeveloped (overdeveloped). As described above, the barrier layer includes at least a deformed layer which is brought about by the surface change of the organic thin film pattern 4, and deposits are deposited on the surface of the organic thin film pattern 4 (4). The sediment layer -. If the barrier layer comprises a deformed layer, the deformed layer includes at least a surface deformation of the organic thin film pattern 4 caused by curing 1 2134-9097-PF 15 200813212 = thermal hardening, a surface deformation of the organic thin film pattern 4 of the wet surname V: Engraved or ashed by &gt; from W - if the barrier layer consists of deposit 曰 ' as 糸 dry # deposit deposited on the organic thin surface. In the first embodiment, the 'removal step causes the second component to be carried out in the second development (overexposure) step of the main step 2 to make it easier to "organic film pattern 4, ensuring the uniformity of the development effect. The main reason is that when there is a chemical solution in which the material of the organic film pattern 4 is removed by the _(4) case 4, the advantages mentioned above are also obtained. An embodiment] In the second embodiment, FIG. 2 illustrates the state of the individual steps of processing the substrate. In the second embodiment, the lithography technique is used to make the initial 4, and thus some parts There are a plurality of (for example, two kinds of & /, pattern first, as shown in Fig. 2 (A), on the substrate: then an organic thin core is formed on the electroconductive thin film 2. 1. 2 into a conductive thin film 2, then ' The organic film 3± material is subjected to a development step and a pre-drying heating step for the organic film weight=step, the organic film 3 is changed into a partial region having two kinds of thick, upper drawing and pattern 4, as shown in FIG. 2(B) Also starting the organic film, for example, as shown in Figure 2 (8), the organic film 4 points, and the two edge portions surrounding the central portion, i include a central portion smaller than the thickness of the central portion 2134-9097-pf 16 200813212. For example, the 'exposure step can carry out the organic film 3 under different exposure levels. Secondly, letting light pass through a halftone mask having two or more light transmittance film patterns, or passing the light through a gray dimming mask having an original pattern and a fine pattern having a light transmittance less than or equal to the upper limit of the exposure amount to make the organic film 3. Exposure. Then, the conductive film 2 is formed into a first pattern by the conductive film 2 formed by starting the organic film pattern, as shown in FIG. 2(c). Specifically, the conductive film 2 is not an organic film pattern. The covered boring tool is removed by wet or dry etching to form the conductive film 2 into a pattern as shown in Fig. 2(C). The result of forming the pattern of the conductive film 2 on the surface of the organic film pattern 4 Forming the barrier layer 'a The spacer layer includes at least one deformed layer formed by the surface change of the organic thin film pattern 4, and "and one of the deposited layers formed by depositing the deposited material on the surface of the organic thin film 4". Pick The above-mentioned first embodiment of the wind, the sixth case 4 completes the removal step to selectively remove the resistance::, the organic film pattern &quot; the area of the non-barrier layer exhibits a second development step of the organic film pattern In addition, as the first step, the heating film pattern 4 of the main + 〃 Y step is transformed into a new appearance on the organic film pattern 4 (the pattern is made to make the starting organic thin show 'in particular, remove the C picture "'If the edge portion of the central portion is such that the organic thin pattern 5 and the thickness in w are smaller than the above, for example, a part of ^ /, a single thickness. The organic phase pattern 4 is shifted in the main step

2134-9097-PF 200813212 Except: and the organic thin film pattern 4 is removed by removing part of the organic thin film pattern 4, then the organic thin film pattern 5 is used as a mask to wet or (10) the film 2, so that the conductive film 2 is not subjected to the organic thin film pattern. = : and has a single thickness, as shown in Fig. 2(8), the resulting conductive ":: has a stepped cross-sectional pattern. Then, as shown in the second (F) figure, the organic thin film pattern 5 is removed. 2 having a stepped profile, the conductive film does not have a vertically distributed cross-sectional pattern or an inverted tapered cross-sectional pattern. The second embodiment has the same advantages as those disclosed in the first embodiment. L. Second Embodiment] In the third embodiment, FIG. 3 illustrates the state of the individual steps of the method of processing the substrate. 70 to 4, because in the third/example, the thickness of the starting organic film pattern is made by the lithography technique. - The core has a plurality of kinds (for example, a hundred first, as shown in Fig. 3(A), a half 6 is formed on the substrate j, and then an organic thin film 3 is formed on the semiconductor film 6 /, 2. The film 2 is further electrically conductive. The film is then sequentially carried out on the organic film 3 The developing step is: 5 boxes of M + I ^ summer + first steps, the organic thin amine is drawn on the organic film 3 to map 4, such as a portion of the region having two thicknesses of the starting organic film system 4, such as As shown in Fig. 3(B). For example, as shown in Fig. 3(B), the organic thin film pattern 4 includes a central portion 2134-9097-ρρ 18 200813212 and has a thickness greater than a central portion and two edge portions surrounding the central portion. For example, the exposure step can perform the organic film 3 twice under different degrees to let the light pass through a thin color having two or more kinds of light transmittance: a reticle, or the light is transmitted through the original pattern and has: The gray mask of the fine pattern of the upper limit of the exposure amount is used to expose the organic film 3.

The back germanium starting organic film pattern 4 is a conductive film 2 and a semiconductor thin film m formed by the wet or dry mask on the substrate 1, and the conductive film 2: the semiconductor film 6 is made into a first pattern, such as the third (c) In the figure, the portion covered by the conductive film 2 and the film pattern 4 of the semiconductor film 6 is removed by a specific wet or wet name. First, the conductive film 2 is imprinted with a wet or dry name, and the semiconductor film 6 is dry etched after the electroconductive film 2 is pasted. ★ As a result of forming the pattern of the conductive film 2 and the semiconductor film 6, a barrier layer is formed on the surface of the organic film pattern f4, the barrier layer includes at least a deformed layer formed by the surface change of the organic thin film pattern 4, and the deposit is deposited on the organic One of the deposited layers formed on the surface of the thin film pattern 4. Then, the removing step is performed on the organic thin film pattern 4 by using the chemical solution of the first embodiment to selectively remove the barrier layer, so that the region of the organic thin film pattern 4 without the barrier layer is present, and then the organic thin film pattern $ is performed. The second developing step and the heating step as the second pre-baking step, that is, the main step is performed on the organic thin film pattern 4, so that the starting organic film pattern 4 is converted into the organic film pattern 5 having a new appearance (pattern). , as in the 2134-9097-PF 19 200813212 (D) map of the $ 4 temple, the removal of the organic film pattern * thickness is less than the edge of the edge of the P knife's central ^ point 'to make the formed organic film map 帛 5 separate and Two areas of the same thickness. As described above, for example, the partial organic thin film pattern 4 is removed in the main step and the organic thin film pattern 4 is removed by the removal of the organic thin film pattern 4 in the first embodiment, the partial removal of the partial organic thin film pattern 4 The step is the "selection step," as defined in the scope of the patent.

Then, the second thin film (wet or silk) conductive film 2 is removed with a single thickness of the organic film pattern 为5 as a mask to remove the portion of the conductive film 2 that is not covered by the organic film pattern t 5 , thus, A conductive film 2 having two separated regions can be obtained as shown in Fig. 3(E). As a result, the patterns of the electroconductive thin film 2 and the semiconductor thin film 6 are different, as shown in Fig. 3(E). Next, as shown in Fig. 3(F), the organic thin film pattern 5 is removed. The first practical example is applicable to a method of manufacturing a source, a gate, a wire, and an NT (Thin Film Transistor) substrate circuit, wherein the semiconductor film 6 is made of n+a_si (high-strength semiconductor for ohmic contact) or a_Si (amorphous germanium). ) constitutes.

The second embodiment has the same Z-point as the first embodiment disclosed in the method of fabricating the source, drain, wire and TFT (thin film electrical a substrate) substrate circuit in which the semiconductor film 6 is made of n+ a_Si or a_Si (amorphous Shi Xi) constitutes. [Fourth embodiment] The state of the individual steps in the fourth embodiment. 4 is a view showing a method of processing a substrate. The initial organic thin film pattern 2134-9097-PF 20 200813212 is completed by the lithography technique in the fourth embodiment. Therefore, it is sufficient for the 笫-this is sufficient. The first and second embodiments are similar in thickness as 'two.' As shown in the 帛4 (Α) diagram, a semiconductor thin film is formed on the substrate 1 = a conductive thin film 2 is formed on the semiconductor thin film 6, and an organic thin film 3 is formed on the electroconductive thin film 2. / then sequentially performing two or more exposure steps, U-steps, and pre-baking heating steps on the organic film 3 to draw on the organic film 3 to have a basin machine; | - the film 3 becomes an organic having two separate portions The two separate layers of the film pattern eight and the mother have two thicknesses, as shown in the fourth (Β) figure. For example, as shown in Fig. 4(8), the organic thin film pattern 4 has two adjacent portions, and each portion has a first block adjacent to the other portion, and a second block away from the other portion, and the thickness of the second block Less than the first block. For example, the exposure step may perform the organic film 3 twice under different exposure levels, allowing light to pass through the halftone mask having two or more light transmittance film patterns, or passing the light through the original pattern and having light transmittance. A gray dimming mask of a fine pattern smaller than or equal to the upper limit of the exposure amount is used to expose the organic film 3. Then, the conductive film 2 is formed by wet or dry etching of the conductive film 2 formed on the substrate 1 by using the starting organic film pattern 4 as a mask, as shown in FIG. 4(C), specifically, The portion of the electroconductive thin film 2 that is not covered by the organic thin film pattern 4 is removed as shown in Fig. 4(C). As a result of forming the pattern of the electroconductive thin film 2, a barrier layer is formed on the surface of the organic thin film pattern 4, and the barrier layer includes at least the surface of the organic thin film pattern 4

2134-9097-PF 200813212 The deformed layer formed by the change and one of the deposited layers deposited on the surface of the organic thin film. Line 4 = 'Use the chemical solution of the above-mentioned first embodiment to complete the removal step in the organic thin case 4 to selectively remove the barrier layer, so that the area of the non-barrier layer in the field case is presented, and then, in the organic __ = Carrying out the development process of the younger brother and the other is proud of the fact that the box is called the private film pattern, that is, the organic film pattern 4: the finished film = the killing 4 is the main step, so that the initial film pattern 4 is transformed into a new look ( The organic film pattern of the pattern) is shown in Fig. 4 (8), in particular, each organic film pattern &quot; two parts = one block, so that the organic film pattern 4 is converted into a single organic film pattern, such as Figure 4(D) shows. /, the degree of drought is as described above, for example, part of the organic thin film pattern 4 is removed in the main step, and the organic thin film pattern is removed by the partial organic thin film pattern 4 in the third embodiment, the partial organic thin film pattern 4 is removed as described above: This is the “selection step” defined in the scope of patent application. ^ Since the reflow soldering has a single thickness of the organic thin film pattern 5, the portions defined in the two patterns 5 are connected to each other to form a new organic thin film pattern, film: brother: (8) shown in the figure 'so as' exposed to the conductive film 2 The area of the semiconductor thin film 6 is covered by the organic thin film pattern 7. 1 knife The organic film pattern 5 can be reflowed by heating the organic film pattern 5 or by making the organic thin 5 organic solvent vapor. Then, the semiconductor film 6 is patterned with the organic thin film pattern 7 and the conductive film 2 to make the pattern of the semiconductor film 6 (single_' dry with the pattern of the conductive film 2 (ie, the two portions are separated from each other), 22 2-9-9097 - PF 22 200813212. As shown in Fig. 4(F), the organic thin film pattern is removed. The fourth embodiment has the same advantages as those disclosed in the third embodiment. In the above embodiment, it is overexposed. Organic film pattern, free of organic thin _ (four) heat and damage 'and all the material development functions performed before the first development of the organic film pattern, such as the drying step or (d) step, specifically 'must make organic The film pattern is maintained in a state of 150 c in the state of 'because the organic film pattern is liable to cause cross-linking at a temperature of 15 generations or higher, and it is preferable to maintain the organic film pattern at a state of (4) ° C or lower. The organic thin film pattern is composed of a material which is prone to a parental phenomenon at a temperature different from 150°, and it is necessary to maintain the organic thin film pattern at a state lower than that temperature. The organic thin film pattern 4 is formed on the substrate by a technique or a printing method. The organic thin film pattern 4 is preferably formed of a photosensitive organic film, wherein the photosensitive organic film is a positive photosensitive organic film or a negative photosensitive organic film. If the organic thin film pattern 4 is composed of a positive photosensitive organic thin film, the phenolic resin is preferably a main component of the organic thin film pattern 4. If exposed to light, the photosensitive organic thin film is preferably soluble in alkali. The chemical solution used is not only suitable for the above removal step, but also for removing all the organic thin film patterns 4 formed on the substrate 1, wherein the organic thin film pattern 4 formed on the substrate 1 is preferably photosensitive to have 2134-9097-PF. 23 200813212 4 After exposure to light, the film formed on the substrate 1 can be completely removed, and the removal step is performed at least in the organic film patterning solution. After the removal step, the main step, the organic film pattern 4 is performed. The chemical solution used in the method preferably has the function of developing the organic thin film pattern 4, but the stripping agent can be used as the main step. The chemical solution. The main step may include a step of at least partially reducing the organic thin film pattern 4. The chemical solution used in the removal step of each of the above embodiments will be described below. The chemical solution described below is not only borrowed by Α μ 1 Emperor is used in the method of the above embodiment's any method which can also be used for processing a substrate. In the examples mentioned later, the difficulty of removing the barrier layer formed on the surface of the organic thin film pattern 4 can be known from the following. And the residual characteristics of the organic thin film pattern 4 except for the partial deformation layer, and the best example of the chemical>column liquid used in the removal step is listed. First, the preparation of 7% ammonium nitrate, 18% ammonium cerium nitrate and 75 %水## The glass substrate is used as the substrate 1, and a chromium film as the conductive film 2 is formed thereon to have a thickness of 200 nm. An organic thin film 3 (phenolic resin resist) is formed on the substrate 1 (for example, see Fig. 1), and then the organic thin film 3 is exposed to light, developed, and pre-baked to make the organic thin film 3 organic. Thin film pattern 4 (for example, see Fig. 1(B)).

2134-9097-PF 200813212: Next, the organic film 3 formed on the substrate 1 is immersed in the above-mentioned residual agent, and the chromium film is etched with appropriate time (for example, see the figure /(C) ) 'Where' the 'appropriate money engraved time,' refers to the removal of the chrome film (conducting film 2) that is not covered by the organic film pattern 4 * owe @ 时 /, 兹 &amp; μ 口 4 Then, the substrate 1 is washed with water and dried. The example mentioned later illustrates the fabrication of the substrate! In particular, the substrate 1β having the barrier layer formed on the organic thin film pattern 4 is then immersed in the substrate 1 In the chemical solution of 3 (TC for 60 seconds, the removal procedure of Example 1-8 and Comparative Example 1-11, the chemical solution components used in the example and control target 1-11 are detailed in Figure 6 The chemical composition abbreviations mentioned in Figure 6 are as follows: HA: via amine amine TMAH · tetramethylammonium hydroxide TEAH: tetraethylammonium hydroxide DEHA: N,N-diethylhydroxylamine MEA: - ethanolamine BDG · monoethylene glycol monobutyl bond PW: water as shown in Figure 6, the chemical solution of Example 1 contains 5% by weight Percent of aqueous hydroxylamine solution, 2% by weight of tetradecylammonium hydroxide and 93% by weight of water. The chemical solution of Example 2 contains 〇·5% by weight of aqueous hydroxylamine solution, 2% by weight of hydrazine hydroxide Methylammonium and 97.5 % by weight 2134-9097-PF 25 200813212 i Percent ("98" shown in Figure 6 is a rounded value) of water. The chemical solution of Example 3 contains 3 % by weight of aqueous hydroxylamine solution, 10% by weight of tetramethylammonium hydroxide and 6% by weight of water. The chemical solution of Example 4 contains 5% by weight aqueous solution of hydroxylamine, 0.5% by weight of tetramethylammonium hydroxide, and hydrazine. % by weight ("95" shown in Figure 6 is the rounded value) of water. The chemical solution of Example 5 contains 5% by weight aqueous solution of hydroxylamine, 2% by weight of tetraethylammonium hydroxide and % Percent by weight of water. The chemical solution of Example 6 contained 5% by weight aqueous hydroxylamine solution, 10% by weight choline, and 93% by weight water. The chemical solution of Example 7 contained 5% by weight of an aqueous solution of N,N-diethylhydroxyamine, 2% by weight of tetramethylammonium hydroxide, and 93% by weight of water. The chemical solution of Example 8 contained 5% by weight. Percent aqueous solution of hydrazine, 2% by weight of tetradecylammonium hydroxide and 93% by weight of water. The chemical solution of Comparative Example 1 contained 2.38 % by weight (2.4 in the 6th figure is a rounded value) of hydrogen An aqueous solution of tetradecyl ammonium is oxidized. The chemical solution of Comparative Example 2 contained 2% by weight of an aqueous solution of tetramethylammonium hydroxide. The chemical solution of Comparative Example 3 contained 5% by weight of an aqueous solution of hydroxylamine. 2134-9097-PF 26

I 200813212 The chemical solution of Comparative Example 4 contained 2 &quot;% by weight of monoethanolamine, 60% by weight of A ratio of organic solvent (diethylene glycol monobutyl ether) and 2% by weight of water. The chemical solution of Comparative Example 5 contained 4 &quot;% by weight of monoethanolamine and 60% by weight of organic solvent (diethylene glycol monobutyl ether). The chemical solution of Comparative Example 6 was composed of an organic solvent (diethylene glycol monobutyl scale). The chemical solution of Comparative Example 7 contained 5% by weight of base amine, 5% by weight of organic solvent (diethylene glycol monobutyl bond) and 9 % by weight of water. The chemical solution of the control IU column 8 contains 5% by weight of base amine, 15% by weight of tetramethylammonium hydroxide and 8 % by weight of water. 0 The chemical solution of Example 9 contains 5% by weight of (IV) Amine, ο·ι% by weight of tetradecylammonium hydroxide and 94.9 % by weight ("95" shown in Figure 6 is a rounded value) of water. The chemical solution of Comparative Example 10 contained 4% by weight of hydroxyamine, 2% by weight of tetramethylammonium hydroxide, and 58% by weight of water. The chemical solution of Comparative Example 11 contained 2% by weight of hydroxylamine, 2% by weight of tetradecylammonium hydroxide, and 97.8 % by weight (98 shown in Figure 6 is a rounded value). Water. The chemical solutions of Examples 1 -8 and the control example 用于-丨丨 were applied to the substrate 1. After removing the steps, the substrate 1 was washed with pure water, and the air was sprayed with nitrogen 2134-9097-PF 27 200813212 ( N2) The pure (four) dry on the substrate 1 is thus prepared to obtain a dried substrate, and the organic ruthenium film pattern 4 is formed in each of the layers of the substrate 1 by an optical sensation. The mirror is observed in the change of the organic thin film pattern 4. The observation results are detailed in 筮β and #, 'r mu, and the image "A1" (the organic film pattern 4 is added to the liquid) The identification criteria are as follows: “〇” ·· The organic film pattern is almost unchanged. △• The organic film pattern except the deformed layer is removed, but the deformed layer remains and the organic film pattern is mixed unevenly. The organic film pattern and The deformed layer is completely mixed. f 〇There is no part except the deformation The outer organic film pattern is not removed' and only the deformed layer is removed (for example, 'deformed layer or deposited layer due to the (four) chromium film). The deformed layer due to the _chrome film is very thin, and the microscope image hardly changes. If the organic thin film pattern 4 except for the deformed layer and the deformed layer caused by the chrome film of the dumpling are not removed in the removing step, there is almost no change in the microscope image. Substrate 1 with the money film pattern 4 (ie, the substrate labeled "〇," in the A1 stop. Soaked in a developer containing 2.38 % by weight aqueous solution of tetramethylammonium hydroxide, at room temperature for 60 seconds, excessive Developing the organic thin film pattern 4. The substrate 1 is washed with pure water, and then pure water on the substrate 1 is blown off by blowing nitrogen gas (N2) with an air gun, thereby preparing a dried substrate 1. The organic thin film pattern 4 is applied to each substrate. The degree of residue of 1 can be known by observing the change of the organic thin film pattern 4 by an optical microscope. 2134-9097-PF 28 200813212 The observation results are detailed in the column after the developer in Fig. 6. (The organic film pattern immersion identification standard is as follows. '〇·Organic film pattern is mixed and kneaded. △•The organic film pattern is unevenly mixed. 2: The organic film pattern is not immersed in the developer due to etching of the chrome film, resulting in the tangible layer' In the removal step, the image containing: FIG. 6 is used: when the surface is formed into a liquid to completely remove the organic thin film pattern 4, the chemically chromized film is turned into two points, and the chrome is formed; The function of the support layer, but the removal part is too strong except for the deformation layer. Therefore, the division is also performed on the organic thin film pattern 4, although the dance = right: no film pattern 4 is re-patterned. If the removal step is carried out, the second part of the removal step is used except for the deformed layer. The learning solution is made by the chrome film of the surname and the deformed layer is removed. The deformation sound is removed and the 曰人i is guilty. The chemical solution penetrates weakly, the Γ domain and the mixed part of the organic film other than the deformed layer, the chemical solution is not suitable for use, (10): the main step of the drawing. Dry: = Membrane pattern 4 is removed in the step of removing the deformed layer by using the f without the f in Fig. 6, but the penetration is caused by the money engraving thin medium: = layer G domain 'and mixed in the weakly deformed layer area Partially except... The film pattern is not applicable because the deformed layer is not vaporized/outside.

2134-9097-PF 29 200813212 The main step for re-patterning on the organic film pattern 4. If the organic thin film pattern 4 is hardly changed after the removal step using the chemical solution containing the components shown in FIG. 6, it means that the organic thin film (4) 4 is not removed, and only the deformed layer due to the (four) chromium thin film is removed, since the chromium is etched. The deformed layer caused by the film is very thin, and there is almost no change in the microscope image. 'If the organic thin film t 4 except the deformed layer and the deformed layer caused by the money engraved film are not removed in the removal step, the microscope image There is almost no change on the top. In this way, the deformation layer caused by the residual film can be removed or not: the developer can be used to develop the organic film (4). The effect of the step is to judge that the developer cannot remove the deformed layer caused by the chrome film.匕 颂 颂 颂 颂 颂 颂 颂 颂 颂 颂 颂 颂 颂 应用于 应用于 应用于 应用于 应用于 应用于 应用于 应用于 应用于 应用于 应用于 应用于 应用于 = = = = = = = = = = = = = = = = = = = = = = = = The film pattern 4 _, the organic film pattern 4 can be uniformly mixed, and the developer is prevented from penetrating into the organic film pattern 4 due to the deformation-free layer. As shown in Fig. 6, the chemical solution in the example can be used in the removal step to remove only the πβ m -r- x layer and block the b layer without removing some of the organic thin film pattern except the deformed layer.重量% by weight of aqueous solution of tetradecylammonium hydroxide (for example, Example 1), 5% by weight aqueous solution of light amine (Control Example 3), containing f-ethanolamine and organic solvent b-ethylene glycol single top) Chemical solution (for example, fe case 5) chemical solution composed of organic solvent (Comparative Example 6), tertamine', ethanolamine aqueous solution (control example hydrazine and hydroxyl group with appropriate concentration)

2134-9097-PF 30 200813212 A chemical solution with an insufficient concentration of amine but wind emulsified tetramethylammonium (Comparative Example 9) lacks the function of removing the barrier layer. 2% by weight of aqueous solution of tetramethylammonium hydroxide (Zhao Zhao, Example 2), containing 1-ethanolamine, organic solvent (diethylene glycol monobutyl scale) and water chemical solution t comparison example 4), appropriate concentration Alkylamine aqueous solution, but the concentration of tetramethylammonium hydroxide is too high (Comparative Example 8), the concentration of tetramethylammonium hydroxide at night is too high (control example 1 〇) and the appropriate concentration of hydrogen: The aqueous solution of the ammonium amide, but the chemical solution (10) having an insufficient concentration of hydroxylamine is not suitable for the removal step, and the undeformed portion of the organic thin film pattern 4 is more completely removed except that the deformed layer is removed. From the above analysis, the chemical solution of the above embodiment preferably contains the first component (containing at least the amino group and the guanidine derivative) in a range of 〇·5 ^ 3 % by weight, and the above implementation The chemical solution of the example preferably contains the second component in the range of 0.2 to 1% by weight (more preferably in the range of 〇·5 to 1% by weight). Figure 5 will be explained below. ^Fig. 5 illustrates the removal of the barrier formed on the organic thin film pattern 4 when the mixing ratio of the hydroxylamine derivative in the chemical solution for the removal step to the second component (for example, tetraalkylammonium hydroxide) is changed. The first removal speed (knife clock) of the layer, and how the second removal speed (A/min) of the portion other than the deformation layer in the starting organic film pattern is removed.曰 As shown in Fig. 5, when the mixing ratio of the hydroxylamine derivative is increased (i.e., the mixing ratio of the tetraalkylammonium oxide is decreased), the first removal rate is also increased. 2134-9097-pf 31 200813212 As shown in Fig. 5, when the mixing ratio of the hydroxylamine derivative is zero (i.e., the mixing ratio of tetraalkylammonium hydroxide is one), the second removal rate is relatively high, when The mixing ratio of the hydroxylamine derivative is increased, and is in the range of 0 to 0.3 (that is, the mixing ratio of the tetraalkylammonium hydroxide is in the range of 1 to 〇. 7). Small; when the mixing ratio w of the hydroxylamine derivative is in the range of 0·3 to 〇·7 (that is, the mixing ratio of the tetraalkylammonium hydroxide is in the range of 〇·7 to 0.3), The second removal speed is relatively low; When the mixing ratio of the private amine derivative is in the range of 〇·3 to 〇·7, the portion other than the deformed layer in the organic thin film pattern is hardly removed, and when the mixing ratio of the hydroxylamine derivative is increased, Between the 〇·7 to the work of the Zhangwei Temple (that is, the mixing ratio of the gas oxidized tetrazolium is in the range of 〇·3 to 〇), the second removal speed becomes larger. · In this way, in order to avoid the portion of the organic thin film pattern other than the deformed layer, and the ratio of the hydroxylamine in the chemical solution mixture used in the removing step is preferably in the range of 〇·3 to 0.7, The time required to complete the removal step is shortened by increasing the first removal speed in the above-mentioned mixture example, &, that is, increasing the mixing ratio of the hydroxylamine derivative. Even if the _ removal speed is lower than the second removal speed, the proper control of the removal step time can also complete the removal step perfectly. In this case, if the ratio of V1/V2 is greater than or equal to 〇·5, where VI is the barrier layer (deformation layer) formed on the organic thin film pattern 4, the mixing speed ❿V2 is the organic thin film pattern except the deformed layer. The partial mixture ^ ^, that is, the ratio of the hydroxyl group in the chemical solution mixture used in the removal step is greater than or equal to about 〇 · 2 3, and the best removal is possible.

2134-9097-PF 32 200813212 Step results. The slower mixing speed of the portion other than the deformed layer in the organic film pattern makes it easier to control the time required to complete the removing step, and therefore, the mixing speed of the portion other than the deformed layer in the organic film pattern is preferably less than or equal to the mother minute. 1000A, preferably less than or equal to 100A per minute, especially at a speed less than or equal to 50A per minute. The fourth embodiment described above includes (a) a main step of re-patterning on the organic thin film pattern 4, a subsequent mixing/deforming step to be described later, and (b) a step of removing the barrier layer formed on the surface of the organic thin film pattern 4. Thereafter, the step of splicing described later is performed before the main step of re-patterning on the organic thin film pattern 4, or (c) is performed after the step of removing the barrier layer formed on the surface of the organic thin film pattern 4 is completed. Mixing/deforming step. A dry example of the mixing/deformation step performed in the above fourth embodiment will be described below. In the mixing and corresponding deformation step of the organic thin film pattern (mixing/deforming step), the organic thin film pattern is contacted with an organic solvent, for example, the organic thin film pattern is exposed to a gaseous environment of an organic solvent, and mixed and returned. Weld the organic film pattern. The mixing/deforming step is completed, for example, by disposing the substrate 1 together with the organic film pattern 4 in an organic solution (mainly an organic solvent) to deform the organic film pattern 4 (mainly mixing and reflow). The mixing/deforming step includes a 惫駚_〃 body treatment step in which an organic solvent (for example, nitrogen (N〇) is used to boil the organic solvent (mainly an organic solvent) and the substrate is exposed to a vaporized organic The atmosphere of the solution.

2134-9097-PF 33 200813212 The pre-treatment can be performed before the port/text step of mixing and deforming the organic thin film pattern formed on the substrate, and at least the removal step is performed by the wet step. Partial removal step of the layer, #ie, using a chemical solution to treat the organic film (4), which previously removes the barrier layer without damaging the substrate and/or organic film pattern, ensuring that the subsequent mixing/deformation steps are completed. In the deformation step, for example, 'the two adjacent organic thin film patterns [20%: pattern, the area becomes larger, the organic thin film pattern is tensified, or the organic thin film pattern is covered on the substrate. on. The film may be exposed to at least one of exposure, development, wet etching, and dry etching before the mixing/deforming step. In the gas environment application step, the organic substance on the substrate is exposed to various gases (for example, the organic solvent is volatilized and the tea is deformed due to the violent deformation, that is, the gas environment is carried out), and is completed in the environment. Gas Ring of Organic Solvent Table 1 is a preferred organic solvent used in the gas environment application step [Table 1]. Alcohols (R-0H) alkoxy alcohols (R-0-R 'Ar-0-R, Ar-〇»Ar) keto glycols 2134-9097-PF 34 200813212 The diols are intoxicated*. In Table 1, R is a alkyl group or a substituted alkyl group, and Ar is a phenyl group or an aromatic group other than the base group.

Table 2 shows specific examples in the gas environment implementation steps. [Table 2] CH3〇H, C2H5〇H, CH3(CH2)XOH Isopropanol (IPA) Ethylene glycol diethyl ether methoxy alcohol long-chain alkyl acetophenone monoethanolamine (MEA) monoethylamine diethyl Amine triethylamine monoisopropylamine monoisopropylamine triisopropylamine monobutylamine dibutylamine tributylamine hydroxylamine diethylhydroxylamine 2134-9097-PF 35 200813212 diethylhydroxyl Amine anhydride pyridine methyl acridine acetone acetonitrile acetone dioxane ethyl acetate ethyl acetate butyl toluene methyl ethyl ketone (MEK) diethyl hydrazine dimethyl sulfoxide (DMS0) methyl isobutyl ketone (MIBK Butyl diglycol butyl acetate (nBA) butyrolactone glycol ether acetate (ECA) ethyl lactate ethyl pyruvate ethyl 2-heptanone acetate 3-decyl butyl butyl glycol ethylene glycol propylene glycol butanediol 2134 -9097-PF 36 200813212 Ethylene glycol monoethyl ether diethylene glycol monoethyl ether glycol monoethyl ether acetate ethylene glycol monomethyl ether glycol monomethyl ether glycol ethylene glycol mono-n-butyl ether polyethylene glycol polypropylene glycol polybutylene Alcohol polyethylene glycol monoethyl ether polydiethylene glycol monoethyl ether polyethylene glycol monoethyl ether acetate polyethylene glycol monomethyl ether polyethylene glycol monomethyl ether acetate poly Ethylene glycol mono-n-butyl ether 3-decyloxypropionate (MMP) Propylene glycol monomethyl ether (PGME) Propylene glycol monomethyl ether acetate (PGMEA) Propylene glycol monopropyl ether (PGP) Propylene glycol monoethyl ether (PGEE) 3-B Ethyl oxypropionate (FEP) Dipropylene glycol monoethyl ether tripropylene glycol monoethyl ether polypropylene glycol monoethyl ether 2134-9097-PF 37 200813212 • Read propylene glycol monomethyl ether propionic acid propionic acid 3-methoxymethyl propionic acid 3-B Oxymethyl Methyl N-methyl-2-pyrrolidone (NMP) When an organic solvent is infiltrated to deform an organic thin film pattern, a gas environment carrying out step of applying a gas generated from an organic solvent to the organic thin film pattern is completed. For example, if the organic thin film pattern is soluble in water, acid or alkali, the gas generated by the aqueous solution, the acid solution or the alkali solution can be used to carry out the gas environment carrying out step. In the above embodiments, the chemical solution is used to remove the entire organic film, or to remove the entire organic film. The chemical solution can also be used to clean the surface formed without the organic film, or to wash away the residue after removing the entire organic film. The crystallization/grain can be used to remove residues from the surface of the substrate or to clean the substrate at any of the above methods of treating the substrate. All of the above-mentioned methods of processing a substrate, a chemical solution, a method of cleaning a surface of a substrate, and a method of cleaning away residues after removing the entire organic film are applicable to, for example, a liquid crystal display (LCD) (including a vertical electric field type liquid crystal display, Horizontal electric field type (transverse electric field type) liquid crystal display, backlit type liquid crystal display and semi-emissive liquid crystal display), electroluminescence (EL) display, field emission (FED) display, display device of fluorescent display and semiconductor display, A method of manufacturing an active device of a plasma display plane (PDP), a method of manufacturing a substrate including an integrated circuit, and the like. 2134-9097-PF 38 200813212 * The chemical solution of the above embodiment preferably removes the entire organic film pattern in the main (4). In the embodiment in which the above organic thin film pattern contains an organic photosensitive film, it is preferable to use a chemical solution in the removing step at least after the photoactivated organic thin film pattern. Preferably, the transamine derivative in the chemical solution of the above embodiment is ca-he-)], wherein each _R2 is a calcination group or a base group of c^c4, respectively, and the silk amine material contains at least More preferably, one of a base amine and n n - diethylhydroxylamine. The anthracene derivative in the chemical solution of the above embodiment is preferably [I 靡 靡 [(-r3) (-r4)], wherein each -^, ... is a hydrogen source +, a methyl group, an ethyl group and a phenyl group, respectively. Further, the hydrazine derivative preferably contains at least one of cultivating, methyl hydrazine, 1, dimethyl hydrazine and phenyl hydrazine. The second component in the chemical solution of the above embodiment preferably contains at least one of hydrogenated tetraalkylammonium hydroxide, alkali metal hydroxide and alkali metal carbonate. Preferably, the tetra-alkylammonium hydroxide in the chemical solution of the above embodiment is [(Rl-he-plate)] enemies, wherein each: is Π to C4 (10) or silky base, and the oxyhydrin Preferably, the base is preferably at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, chlorination, and bis(2-hydroxyethyl)ammonium oxide. Preferably, the oxyhydrin metal in the chemical solution of the embodiment contains at least a gas oxidizing nanoparticle and a mouse oxidizing agent. In the chemical solution of the above embodiment, it is preferable that the bismuth citrate alkali metal contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate. 2134-9097-PF 39 200813212 The content of the first component of 隹t ❼ in the chemical solution of the above embodiment is in the range of U to 30% by weight of the cup, if the content of the chemical solution is x% by weight' X is less than 〇.5, or "ratio", and γ is greater than 30, in addition to the deformation of the ^ ^ ^ 百 film pattern. (7) organic thin in the chemical solution of the above example, the content of 第一 π first component is the most 2 to 10% by weight of the range; in the blade circumference, if the content of the first part of the chemical solution is X% by weight, and the χ χ Χ is less than 〇·2, the chemical solution cannot be removed from the organic The surface of the film pattern, and the layer of the TM layer, if the content of the second component in the chemical or quaternary liquid is &quot;% by weight, and υ is greater than:, in addition to the deformed layer, part of the organic film is removed (4) Preferably, the hydroxylamine derivative in the chemical solution of the above embodiment contains at least one species [(R(i)(R2—)]), wherein each _ 嶋 is a Cm* group or a carbyl group, a thiol group. One of the amines and N,N_:ethylamine, the arrogant, preferably contains at least one species [(Ri_)(R2) _)]nn[(—R3)(m, the parent R R2 R3 and L are respectively hydrogen atom, methyl group, ethyl group and stupid group: -, fluorene, methyl hydrazine, 1, dimethyl hydrazine and benzene One of the bases, and the content of the first component in the liquid mixture is preferably in the range of from 0.5 to 5% by weight. The second component of the chemical solution of the above embodiment preferably contains at least hydrogen hydroxide. One of the metals, the metal oxide and the carbonic acid test, uranyl hydroxide is URiH)(m-)]r()H·, wherein each -n R3 and R4 are C1 to C4 alkyl or a hydroxyalkyl group, or at least a hydrogen-containing one-way soil, a oxidized tetraethyl sulphate, a succinct test, and a diinthyl double hydroxide

2134-9097-PF 40 200813212 (2 - #里基ethyl) One of the money, hydrogenated private a 屈 匕 匕 匕 碱 碱 金属 金属 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少 至少Preferably, the content of the second component of the chemical solution is preferably in the range of from 0.2 to 10% by weight of the sodium sulphate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate. Preferably, the transamidamine derivative in the chemical solution of the above embodiment contains at least one coffee-----, wherein each m is cuc4 u-based or mercapto-based, trans-amine and N,N-diethyl One of the base amines, the organism contains at least one [(Ri-)(R2-)]NN[(-R3)(u], each of which

Ri R2 R3 and R4 are each one of a hydrogen atom, a methyl group, an ethyl group and a phenyl group, a hydrazine methyl hydrazine, a 1,1 dimethyl hydrazine and a phenyl hydrazine, and the first component of the chemical solution is the most It is in the range of 至·5 to 3〇% by weight, and the first knives and eves have a oxidized four-burning base, one of the hydroxides and one of the carbonates, and the tetraalkylammonium hydroxide is [ 〇^-)(1^-)(1^-)〇^一)]^011-, where each of 1,1?2, 1?3 and 1?4 is a C1 to C4 alkyl or a base One of the bases, or at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline and dimethyl bis(2-aminoethyl)ammonium hydroxide, the alkali metal hydroxide containing at least hydroxide One of sodium and potassium hydroxide, the alkali metal carbonate contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate, and the content of the second component in the chemical solution is preferably between 〇·2 and 1%. Within the weight percentage range. The removing step preferably includes the step of cleaning the substrate with a chemical solution which removes only the barrier layer of the surface of the organic thin film pattern without removing the organic thin film pattern partially excluding the deformed layer. In the chemical solution of the above embodiment, the organic thin film pattern is in addition to the deformation 2134-9097-PF 41 200813212 s. Preferably, the p-knife is mixed at a speed less than or equal to ^i per minute, preferably less than or equal to 1 w per minute, especially at a speed less than or equal to 5 〇A per minute, and the removal is completed at the set speed. After the step, the residual amount of the organic thin film pattern is sufficient for patterning on the organic thin film pattern. * The ratio of V1/V2 in the chemical solution of the above embodiment is preferably greater than or equal; 0.5 is the mixing speed of the barrier layer, and V2 is the mixing of the organic +, the portion of the pattern other than the deformed layer. The speed, the ratio of νι is preferably less than or equal to 5. 〇. For example, the ratio of V1/V2 is preferably greater than or equal to 〇·5 (for example, less than or equal to 1 〇〇〇) 'where V1 is the mixing speed of the barrier layer, and ν2 is the organic thin film pattern except the deformed layer. a portion of the mixing speed, and the mixing speed of the portion other than the deformed layer in the organic 4 film pattern is less than or equal to 1 000 A 〇V1/V2 per minute, preferably greater than or equal to 〇5 (for example, less than or equal to 1 000). VI is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the organic thin film pattern, and the mixing speed of the portion other than the deformed layer in the organic thin film pattern is less than or equal to 100 A per minute. The ratio of V1/V2 is preferably greater than or equal to 〇5 (for example, less than or equal to 1 〇〇〇), wherein vi is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the organic thin film pattern. The mixing speed of the portion other than the deformed layer in the i-th organic film pattern is less than or equal to 5 〇a per minute. For example, the deformed layer includes at least surface deformation of the organic film pattern caused by one of curing, thermal oxidation, and thermal hardening. 2134-9097-PF 42 200813212 The ι-shaped layer includes the surface shape of the organic thin film pattern caused by wet etching. Ί The I-shaped layer includes the deformation of the organic film due to dry etching or ashing. Tea Table * For example, the deposited layer includes a thin layer caused by deposition of deposits due to dry etching on the surface of the organic film pattern, and the deformed layer of the towel includes surface deformation of the organic thin film pattern caused by deposits generated by dry etching. In the chemical solution of the above embodiment, preferably, the organic thin film pattern originally formed on the substrate comprises an organic thin film formed by printing or lithography. In the chemical solution of the above embodiment, the organic thin film pattern preferably contains photosensitive organic The film, for example, the photosensitive organic film includes a positive photosensitive organic film and a negative photosensitive organic film. The chemical solution A of the above embodiment, for example, a positive photosensitive organic film preferably contains a phenol resin as a main component. In the chemical solution of the above embodiment, if exposed to light, the photosensitive organic film is preferably soluble in alkali. The chemical solution preferably has the function of developing an organic thin film pattern. The tetraalkylammonium hydroxide in the chemical solution of the above embodiment preferably contains a component having a function of developing an organic thin film pattern. For example, the substrate is a substrate used for a semiconductor substrate or a display unit. According to the above embodiment, in the method of processing the substrate, it is preferable that at least the organic thin film pattern is reduced or removed in the main step. According to the above embodiment, in the method of processing the substrate, it is preferable that the entire film pattern of 2134-9097-PF 43 200813212 is reduced or removed in the main step. The method of treating a substrate according to the above embodiment's toner or developing function 破 breaking the chemical solution using peeling can be a commercially available developer. The function of the shirt is according to the above embodiment, and the method for processing the substrate is performed before the removing step, and the lower layer of the underlying film is disposed in the organic film immediately adjacent to the first film processing burdock +, and The organic thin film is used as the light I first-thin treatment step (the above embodiment, in the method of processing the substrate is better than the second thin film processing step to form a tapered or stepped pattern according to the above embodiment. The organic thin film pattern processing step of the organic thin film pattern 0 after the substrate is processed at least immediately after the removing step or the main W is further included, the organic germanium film pattern processing step includes temperature a The mixing/deforming step of the organic film pattern and deformation. According to the above embodiment, in the method of processing the substrate, it is preferable to additionally include at least one of the steps immediately following the removal step or the main cow "1. The organic thin film pattern processing step of the organic film pattern process, the step of adding the hot organic thin pattern includes a mixing/deformation step. The method for processing the substrate according to the above embodiment The organic thin film in the step of FIG. ^ Before processing on the organic thin film pattern is preferably performed at least exposure, development shirt, one of wet or dry etching. According to the above embodiment, in the method for processing substrate preferably further comprises

2134—9〇97_PF 44 200813212 Before the mixing/deformation step, the organic thin film pattern is used under the thin film on the lower thin film under the organic thin film pattern. The method is the same as the method for processing the substrate according to the above embodiment. After the mixing/deforming step, the organic thin enamel pattern is used as light: preferably, the film is formed on the lower film under the organic film pattern (4), and is disposed in the method for processing the substrate according to the above embodiment. . The area is preferably added during the mixing/deforming step. Light pattern According to the above embodiment, the square film patterns on the substrate are preferably bonded to each other in the mixing/deforming step. The organic layer adjacent to the substrate is preferably planarized in the mixing/deforming step in accordance with the above embodiment. Organic Light Pattern Embodiment The organic thin film pattern in the method of processing a substrate is made by coating an organic film as an insulating film on a circuit pattern on a substrate. According to the above embodiment, in the method of processing the substrate, the organic thin film pattern is mixed/reflowed due to the (IV) organic solution in the mixing/deformation step; 1 the organic solution used in the method of processing the substrate according to the above embodiment It is preferred to contain at least one of the following organic solvents: (a) alcohols (R-OH) (b) ethers (R-〇-R, Ar-〇-R, 〇-〇-Ar) (c) esters (d) ketones and (e) glycol ethers wherein R is an alkyl group or a substituted alkyl group, and is an aromatic group other than a phenyl group or a benzene 2134-9097-PF 45 200813212 group. According to the above embodiment, the method of treating a substrate causes a mixing/reflow phenomenon due to contact of an organic thin film pattern with an organic solution. According to the above embodiment, the mixing/reflow phenomenon is caused by immersing the organic thin film pattern in the organic solution in the method of processing the substrate. According to the above embodiment, the mixing/reflow phenomenon is caused by exposing the organic thin film pattern to the organic solution vapor in the method of processing the substrate. According to the above embodiment, the mixing/deforming step in the method of processing the substrate comprises the step of exposing the organic thin film pattern to a gaseous environment in an atmospheric environment of the vaporized organic solution. According to the above embodiment, the atmosphere in the method of processing a substrate is formed by boiling an organic solution by using an inert gas. According to the above embodiment, in the method of processing a substrate, the organic film pattern preferably has at least two portions having different thicknesses. According to the above embodiment, in the method of processing a substrate, the organic thin film pattern preferably has at least two portions having different thicknesses due to different exposure degrees. In order to manufacture an organic film pattern having two or more different thicknesses, the first exposure step for the film pattern is performed on the film pattern by two or more exposure degrees, for example, in the initial exposure, A kind of viscous light passing through the reticle, developed (this "development", used to make the initial organic film pattern, different from the development of the main step ^ ^ ^ 啰) has been controlled by a variety of exposure levels of organic In the case of the film pattern, if the anti-(4) case is a residual pattern, the portion of the organic film pattern with a high degree of exposure is thinned, if the resist pattern is a negative resist pattern

Anti-# pattern, low exposure organic film 2134-9097-PF 46 200813212 Figure = the thinning of the fraction, so that the resulting organic film has one or more different thicknesses. From the origin of the initial exposure, the thinner portion can be developed by the main step or the less thick portion of the organic thin film pattern can be removed. In the development solution used in the development of the main step, the positive preparation is used in the development step of the first organic film pattern, and the positive development reagent is also used at this time. The negative development reagent is used in the development step of the private shirt test film pattern, and the negative development reagent is also used in the second machine. Bay J is now used to determine the main step of retaining the thinner part or going to the smaller part. It is best to avoid making the organic film two thicknesses before the step of processing the organic film pattern is completed, first, and then the film pattern is later get on. According to the above embodiment, in the method of processing the substrate, the organic film pattern is used as a mask, and the film is formed on the organic thin cloth = square film. The removal of the organic film with a relatively thin thickness can be carried out to leave a portion of the thicker organic film pattern. v According to the above embodiment, the method for processing the substrate is followed by the step of selecting the second film forming step in the organic thin film after the selecting step. In the case of a, the film is exposed on the lower film, and the organic film is processed. The exposure of the organic film is formed on the substrate, and the pattern is followed by the first step. 'Can be made with a new look 47

2134-9097-PF 200813212 (pattern) organic film pattern. According to the above embodiment, in the method of processing a substrate,

It can be selectively removed in the removal step. H According to the above embodiment, in the method of processing a substrate, the barrier layer is removed in the removing step so that the portion other than the deformed layer in the organic thin film pattern is left and bare. According to the above embodiment, the method of processing the substrate preferably further comprises the step of patterning the lower film on the lower film disposed under the organic film pattern using the organic film pattern as a mask, and performing the step before the removing step. This removal step can be performed after the exposure step of the organic thin film pattern (this step is different from the initial exposure step of the organic thin film), between the removal steps, or between the removal step and the main step. The exposing step of the organic thin film pattern is preferably performed only on the portion of the organic thin film pattern of the desired region (front surface) in the substrate. The exposure step of a 70% organic film pattern allows the entire substrate to be fully exposed, or the new appearance of the organic film pattern (pattern) depending on the area of the illumination. For example, g determines a new face (pattern) of the organic film pattern depending on the area of the light, and at least one organic film pattern can be divided into a plurality of regions. After the organic thin film pattern is formed on the semiconductor substrate, the liquid crystal display substrate, or other substrate, and the organic thin film pattern is processed again, the organic thin film pattern can be directly used without processing the underlying thin film disposed under the organic 4 film pattern, for example, when the organic thin film pattern is insulated When the material is composed, the organic film pattern can be used as an insulating film pattern. 2134-9097-pf 48 200813212 Chemical solutions may contain additives such as anti-money agents or stabilizers.

. A method of manufacturing a component having a substrate, a display device, an electroluminescence (10) display, a field emission display, or a plasma display. The advantages of the above embodiments will not be described below. W = the implementation of the financial, the removal step can be divided (4) into the surface: without the need to mix the organic film pattern, so that the second or subsequent organic film pattern can be smoothly developed, or after the removal step The main step for processing a flawed film pattern. The present invention has been disclosed in the above embodiments, but it is not intended to define the present invention. Any one skilled in the art can protect the present invention without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached. Field [Simplified Description of the Drawings] The first (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate according to the first embodiment. The second (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate in accordance with the second embodiment. The third (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate in accordance with the third embodiment. The fourth (A) to (F) drawings illustrate the state in which the individual steps are completed in the method of processing the substrate in accordance with the fourth embodiment. Figure 5 is a diagram showing that when the mixing ratio of the hydroxylamine derivative to the second component (e.g., tetraalkylammonium hydroxide) in the chemical solution used in the removal step is changed, 2134-9097-PF 49 200813212, the removal is formed in organic The thin pattern 廑U/min), and the portion of the first removal speed of the removed barrier layer in the n...o'戍溥骐 pattern, except for the deformation layer, how the removal degree (A/minute) changes.

苐6 is a list of chemical solution components used in Examples 1 to 8 and in the case of Shou Intern 丨 1 ^TO η玎..., Dry Example 1-1. The seventh (A) to (F) diagrams show the state in which the individual steps are performed in the corresponding method of processing the substrate. [Main component symbol description] 1~substrate; 2~conductive film; 3~organic film; 4~organic film pattern; 5~organic film pattern; 6~semiconductor film; 7~organic film pattern; 101~substrate; Film; 103~organic film; 104~organic film pattern.

2134-9097-PF 50

Claims (1)

200813212 X. Shen μ Patent Fan Gu·· Yes: Thin:: Case: The solution is used to remove at least the substrate from the barrier layer formed on the surface of the organic film. The barrier layer includes at least The organic thin film is patterned to form a main k-shaped layer, and one of the deposited layers formed by depositing the d-side of the deposit, - the -::2 contains at least one of a base amine derivative and an anthracene derivative. 7 / liquid, and the second component with development function. Including, according to the order: the method of drawing a chemical solution on an organic film, the barrier layer of the method is removed == except =: the organic thin enamel pattern on the substrate, the main step of blocking the organic film pattern The deformation sound, :, ν includes a 曰% deposit formed on the surface of the organic thin film pattern due to the surface change of the organic thin film pattern to form one of the deposited layers, and the chemical solution is used for the removing step, The gluten solution comprises an aqueous solution of a first component having at least one of a hydroxylamine derivative and an anthracene derivative, and a second component having a developing function. 3. The chemical solution of claim 2, wherein the organic film pattern is completely removed in the main step. 4. The chemical solution according to claim 3, wherein the organic thin film pattern contains a photosensitive organic film, and the chemical solution used in the removing step is performed after at least the organic thin film pattern is photoactivated. The chemical solution according to any one of claims 1 to 4, wherein the hydroxylamine derivative is [(Rl - )(R2 -)] fluorene, wherein each Ri 2134-9097 - PF 51 200813212 and r2 respectively a C1 s C4 or a pure base. The chemical solution according to any one of claims 1 to 4, wherein the spell derivative is [(Ri-)(R2-)]NN[(-R3)(-R〇], Wherein each of R1, R2, Rs and hydrazine is a hydrogen atom, a methyl group, an ethyl group, and a phenyl group, respectively, and the hydrazine is a chemical solution as described in any one of the above-mentioned items of the present invention. The amine has at least a hydroxylamine and a N,N-diethylhydroxylamine. The chemical solution according to any one of the preceding claims, wherein the spell derivative contains at least One of the hydrazine, i, dimethyl hydrazine and phenyl hydrazine. 9. The chemical lysis night/, zhong hai first knives according to any one of the claims 1-4 to at least contain hydrogen. The chemical solution according to the ninth aspect of the patent application, wherein the bismuth oxide is recorded, wherein each of the m3 and the R4 is respectively The chemical solution of the alkyl or carboxyl group of C1 to C4. The chemical solution according to claim 9, wherein the tetrasbromo ammonium hydroxide contains at least tetramethyl hydroxide a chemical solution according to the ninth aspect of the invention, wherein the bismuth oxide base is a chemical solution according to the ninth aspect of the invention. The metal contains at least one of sodium hydroxide and potassium hydroxide. The chemical solution according to claim 9, wherein the carbonic acid test metal contains at least sodium carbonate, sodium hydrogencarbonate, carbon _ and carbonic acid nitrogen 2134-9097 - PF 52 200813212 One of the potassium. 14. The chemical solution as described in any one of claims 1 to 4 wherein the content of the first component in the chemical solution is between 〇5 and 30% by weight The chemical solution according to any one of claims 4 to 4, wherein the content of the second component in the chemical solution is in the range of 〇2 to 10% by weight The chemical solution of any one of the above-mentioned claims, wherein the content of the first component in the chemical solution is in the range of 〇. 5 to 30% by weight, and The content of the second component is between 〇.2 and 10% by weight The chemical solution according to any one of claims 4 to 4, wherein the hydroxylamine contains at least one of [(Ri_)(R2_)]n〇h, wherein each of 1 and R2 Respectively one of C1 to C4 alkyl or hydroxyalkyl, hydroxylamine and N,N-diethylcarbylamine, the anthracene derivative containing at least [(Ri —)(r2 —)]NN[(—R3 (_R4)], wherein each of R1, R2, R3 and R4 is a hydrogen atom, a methyl group, an ethyl group and a phenyl group, an anthracene, a methyl group, a 1,1-diindenyl group and a phenyl group. First, the content of the first component in the chemical solution is preferably in the range of 〇5 to 30% by weight. The chemical/liquid mixture according to any one of claims 4 to 4, wherein the first component contains at least one of a tetraalkylammonium hydroxide, an alkali metal hydroxide and an alkali metal carbonate. The tetraalkylammonium is — — — , in 2134-9097-PF 53 200813212 , each R 1 R 2 , and R 4 are respectively a C1 to C4 alkyl group or a hydroxyalkyl group or a /3 tetramethylammonium hydroxide, One of tetraethylammonium hydroxide, choline and dimethyl bis(2-hydroxyethyl)ammonium hydroxide, the gas oxidation test metal contains at least one of sodium hydroxide and chlorine oxide, The metal contains at least one of sodium carbonate, sodium hydrogencarbonate, potassium carbonate and potassium hydrogencarbonate, and the content of the first component of the chemical solution Φ # & & T T T T T T T T T T T T T T T T Inside. The chemical solution of any one of the above-mentioned claims, wherein the base amine contains at least one of [(Ri_)(R2_)(10)Η, wherein each _R2 is independently a burnt group of AC11C4 Or one of a base group, a trans-amine and a N,N-diethylhydroxylamine, each of which is a hydrogen atom, a methyl group, an ethyl group, and a phenyl group, a hydrazine, a methyl group. , U dimethyl hydrazine and phenyl hydrazine -, and the content of the first component in the 4 chemical solution is preferably in the range of 〇. 5 to 30% by weight, and the first component of the hai contains at least hydrogen One of tetraalkylammonium oxide, alkali metal hydroxide and alkali metal carbonate, which is [(Ri—)(R2—)(R3-)(R4_)]-, where each Ri, R2, r3 and r4 are respectively C1 to C4 alkyl or hydroxyalkyl or to "tetramethylammonium hydroxide, tetraethyl hydride, choline and dinonyl bis(2 hydroxy) One of the ammonium salts, the hydrogen hydroxide test metal contains at least sodium hydroxide and sulphuric acid - 2134-9097-PF 54 200813212 The stone acid detection metal at least 3 has anti-I sodium, sodium hydrogencarbonate, carbon One potassium and potassium bicarbonate, and the solution μ chemical content of the first component is within the range 0.2 to 10% in weight percent. 2. The chemical solution as described in any one of claims 1 to 4 wherein the speed of the portion other than the deformed layer in the organic thin film is mixed to be less than or equal to 丨〇 〇 每 每 per minute. 21. If you apply for a patent scope! The chemical solution of any one of the items 4, wherein in the organic thin film pattern, the velocity at which the portion outside the deformed layer is killed by T is mixed to be less than or equal to 1 〇 每 A per minute. 22. The chemical solution of any one of claims 1 to 4 wherein the speed of the portion of the organic thin film pattern other than the deformed layer is mixed to be less than or equal to 5 Å A per minute. The chemical solution according to any one of claims 1 to 4, wherein the ratio of V1 / V 2 is greater than or equal to or greater than 0.5, wherein VI is the mixing speed of the barrier layer, and V2 is the mixing speed of the portion other than the deformed layer in the trailing gate/organic film pattern. The chemical solution according to any one of claims 1 to 4, wherein the deformed layer comprises the surface of the organic thin film pattern caused by at least one of heat, thermal oxidation and thermal hardening of the L_^ port Deformation. The liquefied solution according to any one of claims 1 to 4, wherein the deformed layer comprises a deformation of the surface of the organic film pattern due to wet etching. The chemical 2134-9097-PF 55 200813212 solution according to any one of claims 1 to 4, wherein the deformed layer comprises a deformation of the surface of the organic thin film pattern due to dry etching or ashing. 27. The chemical solution according to any one of claims 10 to 4, wherein the barrier layer comprises at least a deposit layer of a deposit caused by dry characterization, and a deposit caused by dry etching. One of the deformed layers. 28. The chemical solution of any one of the preceding claims, wherein the deposited layer is deposited by dry etching deposits. The chemical solution according to any one of the preceding claims, wherein the organic thin film pattern originally formed on the substrate comprises an organic thin film pattern made by printing. 30. The chemistry according to any one of the preceding claims, wherein the organic thin film pattern originally formed on the substrate comprises an organic thin film pattern made by lithography. 31. For example, in the patent application range 丨4 to 4 顼 solution, wherein the organic thin film pattern contains a photosensitive organic thinner such as the chemical sensitizing organic lanthanum described in the patent application 帛(4), including positive purity. One of the organic sensitive film. The shape and the type of the sensitizing property are 33. The erbium-type photosensitive organic film described in claim 32 of the patent application has (4) a resin as a main component for each liquid, and the same is the same as the 31st item of the patent application. The positive photosensitive organic 暄^ i &amp; 丨化予洛液, wherein the organic film is exposed to light to dissolve in the alkali. • The solution of claim 1 to 4, wherein the chemical solution described in _彳, 彳 has the function of developing the organic film pattern. The chemical solution according to claim 9, wherein the tetrahydrogen hydroxide in the chemical solution contains a component having a function of developing the organic thin film pattern. The chemical solution according to any one of the preceding claims, wherein the substrate is one of a substrate for a semiconductor substrate and a display. The method for processing a substrate comprises: forming an organic thin film on a substrate; (2) removing at least a barrier layer formed on a surface of the organic thin film pattern, the barrier layer including at least a layer formed by a surface change of the organic thin film pattern, and depositing with the deposit One of the layers is deposited on the surface of the organic film pattern, and the step of removing at least the barrier layer is one of the chemical solutions described in any one of the above claims. A method for processing a substrate, comprising: removing a step of forming at least a barrier layer formed on the surface of the organic film on the substrate by forming an organic film (4) on the substrate; and a main step of processing the organic thin film pattern The barrier layer comprises at least a deformed layer formed by a surface change of the organic thin film pattern, one of the deposited layers formed by the deposit, and a surface of the far away organic thin film pattern: the step of removing the barrier layer less is adopted as claimed in the patent application One of the chemical solutions described in any one of items i to 4. In the case of 巾, please remove or remove the substrate as described in item 39 of the patent scope. The knives 4 organic film pattern is reduced. 41. The method of treating a substrate according to claim 39, wherein the substrate is divided into 2134-9097-PF 200813212, wherein in the main step, the removal is performed. '&quot;Organic film pattern is reduced or removed. 42. As claimed in the patent application, the main step can be done by one of the sides of the processing substrate. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The first film processing step of patterning on the film under the arrangement step, and the case is followed by the first film processing step film pattern as a mask, and the organic thin drawing is performed at ¥%^y The second thin processing step. On the lower film under the special film pattern 44. As in the patent application scope method, the pattern of the processing substrate of the substrate described in the 豆nr + @ 弟 43 item. The method of processing the substrate as described in claim 39, the method of processing the substrate of the organic film pattern immediately after at least the removing step and one of the main steps a pattern processing step, the organic thin pattern processing step comprising a mixing/deforming step of the mixed organic form. The method of processing a substrate as described in claim 39 of the patent application, further comprising the step of processing the organic thin film pattern of the organic thin film pattern immediately after at least the removing step and one of the main steps, 2134-9097-PF 58 200813212 The organic film pattern processing step comprises the steps of heating and heating, mixing with the organic film, and adding a pattern to the pattern. The method wherein at least one of the organic film is applied to the square pattern of the substrate to be treated in the organic film, and the film is one of the patents. The method is further included in the front of the processing substrate of the organic thin film: the organic thin film pattern is light. “The lower film on the underlying mixing/deformation step is disposed under the organic thin film pattern”. Film drawing step. 49. According to the patent application method, the method further comprises: after the organic thin film, the substrate is processed, and the organic film pattern is used as a light film on the lower film under the mixing/deformation step. Drawing; 纟 纟 纟 纟 6 6 6 6 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机The area is increased by 51. If the patent application scope is the method for processing the substrate as described in the mixing/deformation step. ^Split, the adjacent organic film pattern is combined and 5 2 · As in the patent application method, in the bean兮 擒 擒 擒 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 处理 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机The cofferdam method, wherein the organic film of the organic film (4) is treated as a square organic film of the substrate, and the device is deformed in the 'deformation step' to make the qm von insulating film and cover the circuit pattern 2134 on the substrate. The method of processing a substrate as described in claim 45, wherein the organic film pattern is mixed/reflowed by using an organic solution in the mixing/deformation step. The method for processing a substrate according to claim 54 wherein the organic solution contains at least one of the following organic solvents: (a) an alcohol (r-; (b) a test (R-〇-R, Ar- 0-R, Ar-Ο-Ar); (c) esters; (d) ketones; and (e) glycol ethers; /, where R is a burnt group or a substituted group, and Ar An aromatic group other than a phenyl group or a phenyl group. The method for processing a substrate according to claim 5, wherein the organic film pattern is in contact with the organic solution to cause a mixing/reflow phenomenon. Declaring that the substrate of the substrate described in item 54 of the patent target is soaked in the organic thin film In the solution of the machine, the phenomenon of reflowing is as follows: 58. As claimed in the 54th paragraph of the patent application, wherein the organic film pattern is exposed to::: plate: mixing/reflow phenomenon. The 54th method of the patent scope, the 苴中嗲, 1入/付过止, the processing of the substrate, the merging/deformation step includes exposing the machine 4 film pattern to the gas 2134-9097-PF 60 200813212 The gas environment in the atmospheric environment of the organic/liquid solution is carried out. For example, the scope of the processing of the substrate is as follows: and the atmospheric environment is formed by using an inert gas. The method of processing the substrate described in Item 39 of the patent scope is to: at least two portions having different thicknesses. The method of claim 1, wherein the processing of the substrate is not critical, and the two-film pattern has at least two portions having different thicknesses due to different exposure levels. Method, the outer film = the film pattern under the processing substrate described in Item 61 of the patent range is the film forming step of the mask 'under the film disposed on the film of the organic film pattern 4; and the film Η二邱: drought The organic film pattern of the organic/special film pattern portion having a relatively thin thickness is removed in the degree of separation. Therefore, the method of removing the portion of the thicker portion can be left, and the bottom surface of the processing substrate described in Item 63 of the m application/patent specification (4) is plotted on the lower side of the organic thin film pattern after the face p ^ v The second lower phase mapping step. 65. If the patent application method is applied, and the barrier layer is selectively removed in the side/removal step of the substrate as described in item 39. 6 6 . The method according to claim 2, wherein the deformation of the film pattern of the processing substrate selected in the removing step is: wherein the barrier layer is cut such that a portion outside the organic thin layer remains and is exposed. The method of processing a substrate as described in claim 39, wherein the deformed layer includes surface deformation of the organic thin film pattern due to at least one of curing, thermal oxidation, and thermal hardening. The method of processing a substrate according to claim 39, wherein the deformed layer comprises a surface deformation of the organic thin film pattern caused by a wet residual. 69. The method of processing a substrate according to claim 39, wherein the only layer comprises surface deformation of the organic film pattern caused by dry or ashing. 7. The method of processing a substrate as described in claim 39 of the patent application includes a thin layer caused by deposits deposited on the surface of the organic thin film pattern by dry etching. 71. The method for processing a substrate according to claim 39 of the patent application is formed on the surface of the organic thin enamel pattern by dry etching. The method of processing a substrate as described in claim 39 of the patent application, and the organic thin film pattern originally formed on the substrate comprises an organic thin film pattern formed by printing. Method, basin 3·&gt; The scope of the substrate for processing the substrate described by the 39th worker. The organic film pattern originally formed on the substrate includes an organic film pattern made by lithography. According to the micro-technical method, in addition, the method for processing the substrate described in the patent scope 帛39 is in the west: before the removing step, the organic film pattern is used as a mask, ...the lower of the organic film pattern The film below the film is drawn on the film 2134—9〇97~pF 62 200813212. 75. A method of manufacturing a component having a substrate, comprising performing one of the methods of processing a substrate as described in claims 39 to 74 to produce a display having a substrate and a semiconductor component having a substrate. 76. A method of manufacturing a component having a substrate as described in claim 75, wherein the display is one of a liquid crystal display, an electroluminescence (EL) display, a field emission display, and a plasma display. 2134-9097-PF 63