TW200812934A - Method for densification of porous articles - Google Patents
Method for densification of porous articles Download PDFInfo
- Publication number
- TW200812934A TW200812934A TW096129087A TW96129087A TW200812934A TW 200812934 A TW200812934 A TW 200812934A TW 096129087 A TW096129087 A TW 096129087A TW 96129087 A TW96129087 A TW 96129087A TW 200812934 A TW200812934 A TW 200812934A
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid precursor
- precursor
- porous substrate
- liquid
- reaction chamber
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000000280 densification Methods 0.000 title claims abstract description 30
- 239000012705 liquid precursor Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 17
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 35
- 239000002243 precursor Substances 0.000 claims description 25
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 18
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 16
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 16
- 229930195733 hydrocarbon Natural products 0.000 claims description 15
- 150000002430 hydrocarbons Chemical class 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 claims description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 9
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- -1 hexazone Chemical compound 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims 6
- CTMHWPIWNRWQEG-UHFFFAOYSA-N 1-methylcyclohexene Chemical compound CC1=CCCCC1 CTMHWPIWNRWQEG-UHFFFAOYSA-N 0.000 claims 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims 2
- 239000003350 kerosene Substances 0.000 claims 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 claims 2
- GDOPTJXRTPNYNR-UHFFFAOYSA-N methylcyclopentane Chemical compound CC1CCCC1 GDOPTJXRTPNYNR-UHFFFAOYSA-N 0.000 claims 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims 2
- 238000011084 recovery Methods 0.000 claims 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 claims 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims 1
- IRTCJFCIQKNFPP-UHFFFAOYSA-N 2-methyl-1,4-dioxane Chemical compound CC1COCCO1 IRTCJFCIQKNFPP-UHFFFAOYSA-N 0.000 claims 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004821 distillation Methods 0.000 claims 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000005055 methyl trichlorosilane Substances 0.000 claims 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 claims 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims 1
- 230000000704 physical effect Effects 0.000 claims 1
- 238000010926 purge Methods 0.000 claims 1
- 238000000197 pyrolysis Methods 0.000 claims 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 24
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 230000032683 aging Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- 238000004817 gas chromatography Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229920000049 Carbon (fiber) Polymers 0.000 description 4
- 239000004917 carbon fiber Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- GDBCGGFNFKMPAE-UHFFFAOYSA-N 1-decylnaphthalene Chemical compound C1=CC=C2C(CCCCCCCCCC)=CC=CC2=C1 GDBCGGFNFKMPAE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 238000009954 braiding Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002296 pyrolytic carbon Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NEBFBVFMEJNMTO-UHFFFAOYSA-N acetylene;benzene Chemical group C#C.C1=CC=CC=C1 NEBFBVFMEJNMTO-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002783 friction material Substances 0.000 description 1
- 239000012213 gelatinous substance Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
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- 238000011105 stabilization Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
- H05B6/108—Induction heating apparatus, other than furnaces, for specific applications using a susceptor for heating a fluid
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/591—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by reaction sintering
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
- C04B35/83—Carbon fibres in a carbon matrix
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
- F16D69/00—Friction linings; Attachment thereof; Selection of coacting friction substances or surfaces
- F16D69/02—Composition of linings ; Methods of manufacturing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
- F16D69/00—Friction linings; Attachment thereof; Selection of coacting friction substances or surfaces
- F16D69/02—Composition of linings ; Methods of manufacturing
- F16D69/023—Composite materials containing carbon and carbon fibres or fibres made of carbonizable material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
- H05B6/362—Coil arrangements with flat coil conductors
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
- C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Induction Heating (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Glass Compositions (AREA)
- Furnace Details (AREA)
- Silicon Compounds (AREA)
- Braking Arrangements (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
200812934 九、發明說明: 【發明所屬之技術領域】 本發明係關於-㈣於以理想地高的生產速率來緻密化 多錄物件之方法及裝置,尤其但未必僅關於諸如飛_ 動裔之摩擦制動物件的領域。 【先前技術】 •在摩擦物質之領域中,通常已知的係將多孔性物質用於 製造諸如摩擦制動盤之摩擦部件。 此等摩擦部件之製造通常以多孔性預成型&之構造而開 始舉例而5,在許多摩擦制動應用中,使用環形預成型 土不〇 環形預成型料使用若干不同的已知方法來構造。舉例 而言,可將碳纖維織物層針紮在一起,且可自堆疊物質切 割環形預成型坯。 又,可(例如)藉由編織碳纖維或藉由將碳纖維編結為所 要形狀來形成近淨形預成型链。已知某些碳纖維織物具有 "便利以螺旋形式來放置織物之編織品。在此情形中,,,近 淨"指代形成具有接近於最終物件(諸如,環形制動盤)之= 要形狀之形式的結構。 氧化聚丙烯氮化物(p〇1yacryl〇nitride,"ρΑΝ”)纖維或基於 、歷青之纖維為用於此應用類型中之起始纖維的普通實例。 隨後,可在高溫處理步驟中使此等纖維碳化。在另二習知 方法中,使用樹脂或瀝青來形成起始纖維,且稍後以^如 氮氣之反應性氣體來固化所得塊狀物。接著使因而固化: 123480.doc 200812934 塊狀物碳化以獲得半剛性預成型坯。 在任何情況下’品要進一步緻雄、化所得之多孔性預成型 坯(尤其但未必僅利用含碳物質),以便獲得所要摩擦及機 械性質。 化學氣相滲透(chemical vapor infiltration,,,cvi,,)為在此 方面用於獲得碳/碳複合物質之廣泛使用的習知技術。CVI 使用含烴氣體來滲透多孔性預成型坯。接著在高溫下使 CVI氣體裂化,以便在預成型坯之纖維結構上留下碳塗 層。 習知CVI通常需要幾百小時之處理,以便獲得具有所要 密度及機械性質之碳/碳(”c/c”)結構。例如,典型的習知 CVI製程包括被執行(例如)超過大約3〇〇至5〇〇小時或更多 之第一滲透週期。 然而,習知CVI在適當地緻密化預成型坯之内部之前頻 繁地導致預成型坯之表面孔隙度的快速阻塞。為了,,重開,, 表面孔隙度以允許進一步緻密化,中間加工步驟變為必要 的 般而言,此中間加工(使用諸如研磨之已知方法)移 示一有妷阻塞孔之預成型坯的表面層以曝露預成型坯之開 :使侍烴氣可再次滲透預成型坯結構。考慮到在典型緻 製私中緻岔化幾百個預成型坯,中間加工步驟可將多 達48小時添加至整個習知CVI緻密化製程。 一旦完成部分緻密化之物件之中間加工,便執行第二 製程以利用預成型坯之重開表面孔隙度。A第二CVI 步驟可持續(例如)另—遍_5叫時或更多。此通常使 123480.doc 200812934 用C VI來完成習知的緻密化製程。 用以緻欲化多孔性預成型述之另一方法使用液體而非氣 悲烴前驅物。此緻密化方法在此項技術中有時被稱為,,薄 膜沸騰”或’’快速緻密化”。 薄膜沸騰緻密化通常包括將多孔性預成型坯浸沒於液態 煙中’使得液體大體上完全滲透預成型坯之孔及間隙。此 後’藉由諸如感應線圈之適當置放的電元件來將所浸沒之 預成型坯感應性地加熱至高於液態烴之分解溫度的溫度 (通常為1000°c或更多)。更特定言之,鄰近於感應性加熱 之預成型链結構之液態烴在預成型坯孔隙度内解離成各種 氣相種類。氣相種類之進一步熱分解導致熱解碳形成於多 孔性物質之開區域中的内表面上。在(例如)美國專利第 4 472 454 號、第 5 389 152 號、第 5 397 595 號、第 5 733 61 1 號、第 5 547 717 號、第 5 981 002 號及第 6 726 962號中論述了液體前驅物用於緻密化之使用。此等 文件中之每一者以全文引用的方式併入本文中。 通常已知此領域中之感應性加熱的概念,其包括如在上 述參照案中所述的概念。然而,將預成型坯加熱至高溫 (至少lootrc且多達i4〇o°c )同時照字面意義將其浸沒於高 度揮發性之烴液(諸如,環己烷)中會引發非常重要的安全 問題。 【發明内容】 本發明係關於一種使用液體前驅物來緻密化多孔性基板 之製程,其中所使用之”新,,或”新鮮,,液體前驅物的體積係 123480.doc 200812934 藉由將用於緻密化之液體前驅物維持於小於純淨但仍在化 子上適合於緻密化製程之純度含量來有效地減小。實際 上,本發明使用人工”老化的”(依據存在於其中之雜質)液 體前驅物。 【實施方式】 本發明之方法及裝置之參看隨附圖式的特徵及細節係藉 由說明來展示且並不作為對本發明之限制。 僅藉由實例及/或說明,在下文中提及諸如用於製造摩 擦制動盤之預成型坯的多孔性預成型坯。然而,應明確地 注意,本發明通常更適用於以所述之方式來緻密化其他種 類之多孔性基板。 圖1中說明用於使用液體前驅物來執行緻密化之設施的 高度示意性圖示。系統可包括用於管理新及所使用之前驅 物液體之輸送的遠端液體前驅物儲存部位100(包括(例如) 机體轉移系統)。根據本系統所使用之前驅物液體的一實 例為諸如環己烧(C6HU)之液態烴。舉例而言,可提供用於 液體前驅物之一或多個遠端儲存槽的槽”場,,(farm)(共同地 以1〇〇表示)。槽場亦可包括用於至少最初儲存所使用之液 :前驅物的一或多個槽。為了安全起見,可能需要或甚至 而要(視可適用之工業需求而定)至少保持槽場1〇〇與設施之 其餘部分相距某-距離。舉例而t,_些地區及/或國家 法令需要大約幾百尺之分離度。 ;、、要夺°又施可視需要包括用於保持相對少量之新前驅 物液體接近於處理設備之相對較小的局部儲存槽1〇5。 123480.doc 200812934 用於互連設施之各種部分之管道系統(包括泵及其類似 物)為白知的’且可具有適合於所使用之液體前驅物(尤其 但未必僅為液悲烴)之輸送的任何構造及配置。流體轉移 系統較佳但未必為電腦控制的。市售的電腦控制系統(例 如且不限於可購自公司OPT0 22之系統)可用於監控且控制 此類型之流體轉㈣統’其包括新液體前驅物自外部供應 器之負載。 " 將液體前驅物自局部前驅物儲存槽1G5供應至—或多個 反應室(共同地被指示於110)β較佳地,提供足夠液體前驅 物以大體上浸沒在其中被緻密化之—或多個預成型链,以 及與其相關聯之感應加熱線圈。 如前文所提及,薄膜沸騰製程產生部分地導致熱解碳形 成於預成型4孔隙度之内表面上的氣態種類。•物蒸氣 在可能之程度上被俘獲且為了製程中之可能再循環而在習 知冷凝器單元115處被冷凝。商用冷卻塔14〇可用於維持適 當水溫以用於冷卻冷凝器單元丨丨5。 仍剩餘之廢氣較佳被傳送至已知組態之熱氧化器以 燃盡廢氣中之殘餘烴。 來自電源125之功率係藉由根據設施中之給定之元件配 置且根據適當之所要尺寸考慮而構造之金屬匯流條%轉移 至感應線圈25。匯流條可由(例如)銅製成且較佳但未必藉 由水冷卻網路50進行水冷卻。(見圖2。) 曰 每一電源125可具有遠端PID迴路控制能力且可自電腦控 制終端來監控且控制。藉由已知方法對緻密化製程 123480.doc -10- 200812934 始、度控制、電壓控制、電流控制、頻率控制及/或溫度控 制亦在預期配置之範疇内。 圖2說明反應室11〇,該反應室11〇經構造且配置以處理 其中之兩個(例如)多孔性預成型坯。反應室11〇具有對應於 待處理之母預成型坯35的兩個感應加熱線圈組25。感應 線圈組25較佳地使用由(例如)可耐受(例如)液態烴環境之 非導電玻璃複合物質45(諸如,在此項技術中被稱為,,G_ 10之物貝)製成的非反應性熱穩定支撐物而安裝於適當位 置。感應加熱線圈25較佳地為水冷卻盤餅形螺旋線圈且可 由銅金屬製成。為此,需要將專用於水冷卻系統之熱交換 器135(見圖1)提供給感應線圈乃。在使用中,被緻密化之 預成型坯(或磨損制動器)35藉由自感應線圈乃之直接耦合 來加熱。 在負載及卸載線圈/反應室11〇之實例中,頂蓋面板15具 有用於密封室110之習知鎖定機構。每一反應室11〇(多至 所提供的)具有可操作地連接至冷凝器115及熱氧化器 之共同排出線10及共同液體前驅物供應線連接2〇。 每一反應室11〇可自電腦控制系統被理想地填充、排放 且^控。纟自緻密化製程之排出液體前驅物蒸氣經冷凝且 反饋至反應室U0’而殘餘廢氣接著被帶至熱氧化器12〇且 被燃燒。 一因為揮發性液態烴為用於本發明中之液體前驅物的特定 Θ例’所以需要(但非強制性地)提供氮(n2)氣體供應系統 (未圖示)’以(例如)沖洗管道系、统且通常以惰性氣體(而非 123480.doc 200812934 3氧工氣)來填充系統中之空隙,以便減小燃燒風險。在 特疋貝例中,遠端液體前驅物儲存槽與局部液體前驅物儲 存槽=者中之空白空間以輕微的連續供應之超壓氮(或其 紙k ί已知之惰性)氣體來維持,以便防止揮發性蒸氣之 在危險的積聚。將與排出氮氣混合之烴種類發送至埶氧 化器120,使得烴可在氣體排出i外部之前被燃盡。…、 ’因_使用”濕式”製程,所以有用的係將乾燥烘 統中’以在緻密化之後使緻密化預成型坦 =°、自此乾燥烘箱⑽之排出亦較佳連接至熱氧化器 ,e ^ ^ I孔中所夾页之重及輕的芳族物。 關於女全考慮,假定在 社乾^期間在烘箱中存在揮發性氣 體,則有料係使用在結構上抿4m ^ ^ ^ ^ ^ 彝上抵抗在其中發生爆炸之情況
下之故卩手的烘箱結構。乾焊I 以# 1 ^ ^ ” I耘可為(例如)電腦控制的, 以便間化製程控制。
123480.doc 12- 200812934 表1 時效環己烷-八個連續 m 化學名稱 #1Α #1B #2A #2B #3A #3B #4A #4B #5A #5B #6A #6B #7A #7B #8A #8B 〈百分比範圍〉 Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% Qty% 未知氣體 0.02 0.07 0.12 0.08 0.12 0.10 0.14 0.09 0,19 0.10 0.10 0.10 0.15 0.10 0.07 0.02 環戊二烯 0.02 0.08 0.07 0.10 0.10 0.13 0.13 0.13 0.18 0.16 0.14 0.14 0.15 0.14 0.12 0.18 己烷 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 甲基環戊烷 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.01 0.02 0.01 0.02 苯 0.20 0.73 0.61 1.15 0.97 1.55 1.41 1.89 1.89 2.19 2.00 2.33 2.24 2.55 226 2.75 環己烷 99.57 98.34 98.60 S7.44 97.82 96.58 96.89 95.81 95.90 95.26 95.68 94.98 95.22 9459 95.23 9427 環己烯 0.03 0.07 0.06 0.11 0.09 0.14 0.13 0.17 0.16 0.19 0.17 0.20 0.19 0.22 0.20 0.23 庚烷 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0,00 0.00 甲基環己烷 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0,00 0.00 0.00 甲苯 0.03 0.12 0.09 0.18 0.15 0.24 0.21 0.31 0,29 0.35 0.31 0.38 0.35 0.42 0.37 0.44 乙苯 0.00 0.01 0.00 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.01 0.02 0.02 0.02 0.02 0.02 苯乙炔 0.01 0.03 0.02 0.04 0.03 0.05 0.05 0.07 0.06 0.08 0.07 0.08 0,07 0.08 0.07 0.09 苯乙烯 0.03 0.11 0.08 0.17 0.13 0.22 0.19 0.29 0.26 0.32 0.28 0.35 0.32 0.38 0.33 0.39 壬院 0.00 0.00 0.00 0.00 0.00 0.01 0.00 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 茚 0.01 0.05 0.04 0.08 0.06 0.11 0.09 0.14 0.12 0.15 0.13 0.16 0.14 0.17 0.15 0.16 萘 0.04 0.17 0.13 0,27 0.21 0.36 0.31 0.47 0.42 0.53 0.45 0.57 0.51 0.62 0.54 0.62 甲基萘 0.00 0.01 0.01 0.01 0.01 0.02 0.01 0.02 0.02 0.02 0,02 0.02 0.02 0.03 0.02 0.02 危 0,00 0.03 0.02 0.04 0.03 0.05 0.04 0.06 0.05 0.06 0.05 0.06 0.06 0.06 0.06 0.06 η 0.00 0.01 0.00 0,01 0.01 0.01 0.01 0.02 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 總數 99.99 99.86 99.88 99.72 99J7 99.61 99.65 99.51 99.59 99.48 99.46 99.45 99.49 99.44 99.49 99.31
表1提供老化C6H12及自緻密化製程所產生之主要雜質的 分析。在此研究中,使用專用功率曲線而以碳化預成型场 來執行三個反應器中之八個緻密化週期。詳言之,目標為 減少新或,,新鮮,,液體前驅物(其可為相對較貴的)之使用’ 以補充在生產期間所使用之前驅物。 收集且發送來自八個連續運轉之十六個老化CsHu樣本 以供分析。目的為使個別污染物峰值與老化C6H12相關。 在每一緻密化週期之前及之後收集樣本且將其識別為A及 B 〇 在第八週期結束時之C6H12 %濃度仍高於94%。主要的所 得雜質峰值為苯、萘、甲苯、苯乙烯、環己烯、環戊二烯 -13- 123480.doc 200812934 及印。七個所量測雜質中之六個在整個八個週期中遵循穩 疋的通f漸增之趨向。由老化研究構成之氣相層析法(gc) 刀析扣不所有主要污染物及環己烷濃度完全可預測。所有 雜質峰值自一週期至下一週期被一致地重複。 亦預期藉由以各種雜質來摻雜液體前驅物而對老化液體 則驅物之模#疑。以此方 <,有可能有利地延長液體前驅物 之可用令命及/或減少對高度純淨(且因此,相對昂貴)液體 $驅物之而要。換έ之’ 一方面,可識別前驅物純度之” 最】έ1,使得可使用以高於彼最小值之純度含量的前 驅物(在以高度純淨前驅物進行替換之前)。另一方面,可 識別前驅物純度之較低可接受含量,使得所預期之緻密化 製程將在正進行中之基礎上使用彼較低純度之前驅物。總 之’理想地減少了局純度前驅物液體之使用。 藉由以上文所提及之各種雜質來摻雜液體前驅物以便近 似兩度純淨液體前驅物在若干製程週期之後的逐漸”惡化” 來杈擬老化液體前驅物。開發一模型以預測在各種週期時 之%己烷濃度。基於來自先前所述之八個連續運轉的實驗 二貝料來執行外插法。圖4說明所預測之環己烷濃度對比連 續製程運轉之數目。應注意,主要因為在緻密化週期之前 將新環己烧添加至製程槽,所以所計算之環己烷濃度在約 40個運轉之後大體上達到穩態。 123480.doc -14- 200812934 500加侖分批計算;
化學品 質量百分比 密度 質量百分比X密度 kg/500加侖 丨/500加侖 加侖 環己烷 90.00 0.779 0.701 1291.500 1657.895 438.02 苯 5.46 0.874 0.048 78.351 89.646 23.68 萘 1.25 0.963 0.012 17.938 N/A N/A 苯乙烯 0J8 0.909 0.007 11.193 12.314 3.25 環己烯 0.51 0.810 0.004 7.319 9.035 2.39 環戊二烯 0.44 0.986 0.004 6.314 6.404 1.69 甲苯 0.86 0.867 0.007 12.341 14.234 3.76 茚 0.36 0.997 0.004 5.166 5.183 1.37 苯乙炔 0.17 0.930 0.002 2.440 N/A N/A 苊 0.15 0.899 0.001 2.153 N/A N/A mgr 99.98 0.790 474,16 注意:混合物之所計算的密度爲:0,790 g/cc。可允許的槽容量爲480加侖 480加侖批重:0.790x480x3.785=1435 (kg) 表2 九種化學品係購自Alfa Aesar以摻雜環己烧前驅物。表2 提供關於用於摻雜之化學品的資訊。所購買之化學品之純 度係在99.6%至80%之範圍内。 表2提供用於個別化學品之量以獲得90%之環己烷濃 度。儘管因為此凝膠狀物質在空氣中極其易燃,所以為了 安全起見而未在混合中使用環戊二烯,但將90%之環己烷 濃度用於最初混合,以便模擬模型。然而,咸信對測試之 效應為最小的。使用最初90%之混合來執行六個連續緻密 化週期。在每一週期之前及之後收集液體前驅物之樣本且 發送以用於GC分析。 500加侖分批計算VS GC量測; 化學品 混合中所 使用之質 量百分比 GC百分 比範圍 密度 質量百分 比X密度 kg/500加侖 丨/500加侖 加命 環己橾 90.000 90.318 0.779 0.701 1291.500 1657.895 438.02 苯 5.460 5.255 0.874 0.048 78.351 89.646 23.68 萘 1.250 1.422 0.963 0.012 17.938 N/A N/A 苯乙烯 0.780 0.870 0.909 0.007 11.193 12.314 3.25 環己烯 0.510 0.536 0.810 0,004 7.319 9.035 2.39 環戊二烯 0.440 0.010 0.986 0.004 6.314 6.404 1.69 甲苯 0.860 0.939 0.867 0.007 12.341 14.234 3.76 茚 0.360 0.390 0.997 0.004 5.166 5.183 1.37 苯乙炔 0.170 0.204 0.930 0.002 2.440 N/A N/A 危 0.035 0.010 0.899 0.000 0.502 N/A N/A 1¾¾ 99.87 99.95 0.789 474.16 表3 15- 123480.doc 200812934 將來自六個連續週期之總共十二種老化前驅物發送至用 於氣相層析法分析之實驗室。在緻密化週期之前及之後自 5 00加侖之槽收集老化前驅物樣本。表3提供對所模擬之 90%之混合前驅物的GC分析。在表3中觀察到,除了環戊 二烯以外,來自所有化學品之所報告的濃度精密地遵循用 於90%之混合物中的質量百分比,環戊二烯歸因於其在空 氣中之高易燃性而實際上未被使用。然而,咸信環戊二烯 自實際樣本之省略對測試具有最小的整體效應。 摻雜硏究-六個連續運轉 化學名稱 #1Α #1Β H2A USB #3A #3B MA me #5A #5B #6A #6B <百分比範圍〉 Qty% Qty% Qty% Qty% Qty% Qty% Oy% Qty% Qty% Qty% Oy% Qly% 未知物 0.040 0.410 0.42D 0.540 0.580 0.77Ό 0.710 0.830 0.750 Q840 0.860 Q97D 環戊二烯 0.010 Ο.ΟΘΟ 0.004 0.154 0.131 0.172 0.164 0.2D4 0232 0.^6 0.203 0.237 苯 5.255 5719 5.533 5.824 5.617 6.133 5.783 6.270 5.885 6.371 6.026 6.473 環己烷 90.318 89.569 89.856 89.396 89.758 88.871 89.583 88.728 89.444 88.472 8Θ.1Θ6 88.429 環己烯 0.536 0.551 0.629 0.S2B 0.507 0.5S 0.497 0.515 0.481 0.505 0.474 0.480 甲苯 0.939 0.9Q2 0.962 1.0Q1 0.963 1.050 0-978 1.067 0.985 1101 1017 1078 乙苯 0.0Q2 0.010 0.010 0.018 0.018 O.Q27 0.025 0.G33 0.000 0.0ΘΘ 0.036 0.041 苯乙炔 0.204 0.184 0.180 0.167 0.161 0.155 0.145 0.143 0.132 0.140 0.128 0.127 苯乙烯 0.870 0.842 0.83D 0.815 0.782 0.809 0.750 0.787 0.722 Q8CB 0.739 0.7ΘΟ 茚 0.380 0,311 0.306 0.276 0.2S4 0.247 0.228 0.223 0.205 Q229 0.2D8 0.200 萘 1422 1.284 1.243 1.214 1.156 1.163 1.0ΘΘ 1.109 1.018 1162 1.0Θ9 1.0Θ5 甲基萘 0.000 0.010 0.010 0.016 0.015 0.Q2D 0.018 0.023 0.021 0.Q27 O.Q25 O.Q27 苊 0.010 0.080 0.000 O.CX38 0.037 0.043 0.039 0.050 0.046 0.055 0.0^ 0.055 η 0.000 0.005 0.005 0.010 0.010 0.014 0.012 0.015 0.014 0.019 0.017 0.018 總數 ιω.ω 100.00 100、00 ιω.ω 100.00 100.00 moo 100.00 100.00 100.00 moo ιω.ω
表4 表4說明來自六個連續週期或十二種前驅物樣本之主要 污染物的進程。純度通常以90.3%而開始且在六個緻密化 週期之後以88.4%而結束。在大多數狀況下,除了苯以 外,污染物達到穩態或緩慢地下降。(見(例如)表4中之環 戊二烯、環己烯、甲苯、乙苯、苯乙炔、苯乙烯、茚、 萘、曱基萘、苊及苐。)此指示自環己烷(C6H12)至苯(C6H6) 之化學分解的繼續更可能以較低之c6h12濃度含量而繼 -16- 123480.doc 200812934 (見(例如)圖5中之苯濃度 實務上,可使用若干方法來管理 下文中加以描述。 4物。其中之一些名 T干連續週期可以相同液體前,驅物浴來運 新%己烷來週期性地替換整個儲存槽。以 院濃度將視連續·運轉之數目而 ’環己 、曲A m鮮Ϊ衣己统濃度盥板 浪:之間變化。圖6展示每隔8週期排放儲存槽之狀況:、- =以:理前,驅物之另—方式為僅週期性地替換儲存槽中 之液體前驅物的一部分。此方、本 th此方法減小了濃度之變化,且因 ,允許對自此前驅物所沈積之高 構、熱-機械或摩捧性質)。在此方$ 結 …生貝)在此方面’圖7說明環己烷濃度 _ #何糟由在每隔4個運轉以新鮮環己烷 半儲存槽來實現。 、 二據此等兩種方法,從不完全排放儲存槽。根據分別對 =圖6及圖7之方法來執行多個運轉,且藉由氣相層析法 /刀析所使用之環己烷樣本。表5aA5b分別提供此等分析 之結果。 m πππ$ ¥ 烷, |苯雰|
表5A 123480.doc -17- 200812934 運轉 14 15 17 19 20 22 25 33 36 樣本 3-6 3-7 4-2 44 5.1 5.2 6.2 7.5 8.2 m 甲基萘 0.011 0.01 0.008 0.013 0.007 0.01 0.01 0.014 0.006 苊 0.022 0.015 0.021 0.03 0.013 0.024 0.02 0.016 0.007 乙苯 0.017 0.018 0.012 0.017 0.011 0.013 0.014 0.021 0.012 苐 0.007 0.005 0.005 0.009 0.004 0.007 0.006 0.008 0.012 菲 0.032 0.025 0.025 0.041 0.021 0 0.027 0.043 0.017 苯乙炔 0.046 0.046 0.035 0.048 0.028 0.036 0.033 0.042 0.022 茚 0.083 0.078 0.057 0.084 0.049 0.067 0.063 0.082 0.045 環戊二烯 0.147 0.141 0.119 0.156 0.083 0.118 0.142 0.199 0.085 環己烯 0.17 0.172 0.119 0.16 0.095 0.122 0.136 0.206 0.114 苯乙烯 0.248 0.247 0.181 0.248 0.147 0.191 0.185 0.246 0.134 萘 0.321 0.296 0.216 0.329 0.198 0.266 0.264 0.359 0.194 甲苯 0.548 0.547 0.347 0.422 0.247 0.3 0.287 0.394 0.21 苯 2.233 2.242 1.631 2.253 1.362 1.737 1.763 2.576 1.363 環己烷 95.636 95.767 96.804 95.597 97.458 96.642 96.541 95.094 97.491 未知物 0.479 0.391 0.42 0.593 0.277 0.467 0.509 0.7 0.288
表5B 實驗資料確認計算為用以預報環己烷濃度對比運轉數目 之準確方法(見圖8)。應注意,圖7及圖8亦說明進一步確認 環己烷依據其一般曲率之預期降級速率的8週期實驗資 料。 此外,分析展示每一化學組份之濃度在若干運轉之後大 體上保持穩定。 儘管以上已為了說明且解釋本發明起見而參考某些特定 實例來描述本發明,但應理解,本發明並非僅由對彼等實 例之特定細節的參考來限制。更具體言之,熟習此項技術 者將易於瞭解,在不脫離如隨附申請專利範圍中所界定之 本發明之範疇的情況下,可在較佳實施例中進行修改及開 發。 【圖式簡單說明】 圖1為根據本發明之用於使用液體前驅物來執行緻密化 之設施的示意性圖示; -18- 123480.doc 200812934 圖2及圖3為根據本發明之用於緻选化多孔性物件之反應 室的部分剖視側視圖及俯視圖; 圖4說明緻密化運轉週期與被量化為主要前驅物組份之 濃度之液體前驅物純度之間的實驗導出關係; 圖5說明在若干週期内在液體前驅物中之雜質含量的實 驗獲得進程; 圖6說明在週期性地恢復前驅物純度之若干週期内的計 算對比實驗資料;及 圖7及圖8說明在週期性部分地恢復前驅物純度之若干週 期内的計算對比實驗資料。 ° 【主要元件符號說明】 10 15 20 25 30 35 45 50 100 105 110 115 120 共同排出線 頂蓋面板 共同液體前驅物供應線連接 感應線圈 金屬匯流條 預成型坯 非導電玻璃複合物質 水冷卻網路 遠端液體前驅物儲存部位/_ 儲存槽 反應室 冷凝器單元 熱氧化器 123480.doc 200812934 125 電源 130 乾燥烘箱 135 熱交換器 140 冷卻塔 123480.doc -20-
Claims (1)
- 200812934 十、申請專利範圍: 1· 一種緻密化一多孔性基板之方法,其包含: 在反應室中’將該多孔性基板浸沒於一液體前驅物 中’使得該液體前驅物滲透該多孔性基板中之孔;及 將為所次沒之多孔性基板感應性地加熱至一足以導致 液體前驅物在該基板之該等孔内熱解且沈積一分解產物 以便緻密化該多孔性基板之溫度, 其中該液體前驅物之一化學純度含量經控制成小於在 化學上純淨且足夠地在化學上純淨以獲得一具有所要物 理特性之分解產物。 2·如請求項丨之方法,其中該液體前驅物包含一烴。 3·如請求項!之方法,其中該分解產物包含碳。 4·如請求項2之方法,其中該烴係選自由環戊烷、環己 烯、1·己烯、汽油、甲苯、甲基環己烷、正己烷、煤 油、加氫脫硫煤油、苯及其組合所組成之群。 月求員1之方法,其中該液體前驅物之該化學純度含 置經控制成在約80%與約99.9%之間。 6. 8. 如:求項5之方法’其中雜質存在於該液體前驅物中, 6玄等雜質包含環戊二稀、己院、甲基環戊烧、苯、環己 烯、庚燒、甲基環己烧、甲苯、乙苯、苯乙炔、苯乙 烯:壬烷、節、萘、甲基萘、危及敦中之一或多者。 如清求項1至6中壬一:ti夕古、、土 〇+ 1 3 任項之方法,其中該液體前驅物之該 化學純度係使用一線内蒸餾製程來控制。 月长員7之方法’其中該液體前驅物之該化學純度經 123480.doc 200812934 控制成在約95%±5%之一範圍内。 9·如請求項7之方法,其中該液體前驅物之該化學純度係 藉由使一些化學純淨液體前驅物與含有反映在_或多個 先如緻密化週期中之使用之一或多種雜質的一些老化液 體前驅物混合而經控制成在約9〇。/。±5%之一範圍内。 10·如請求項1之方法,其中該液體前驅物含有_有機矽 烷。 11·如請求項10之方法,其中該有機矽烷係選自由甲基三氯 矽烷、二甲基二氯矽烷、甲基二氣矽烷及三_正甲胺基矽 烷所組成之群。 12.如凊求項10之方法,其中該分解產物包含碳化矽及氮化 石夕。 13·如請求項丨之方法,其中該液體前驅物為一有機矽烷與 一烴之一混合物。 14·如凊求項12之方法,其中該分解產物為碳/矽碳化物或碳, 石夕氮化物中之一者。 15·如凊求項丨之方法,其中感應性地加熱該所浸沒之多孔 性基板包含: 設定一用於感應性加熱之最初頻率及功率位準,該最 初頻率及功率位準有效於將足夠熱積聚於該多孔性:板 之-幾何中心區域處,以導致液體前驅物蒸氣之熱解, 且優先在位於該多孔性基板之該幾何中心區域的該 中; 心區域而同時 在足以緻密化該多孔性基板之該幾何中 123480.doc 200812934 不緻密化該多孔性基板之其他部分的該最初頻率下供應 一用於感應性加熱之最初功率位準; 在緻密化該多孔性基板之該幾何中心區域之後,進一 步調整該所供應之功率位準及頻率,以便在自該多孔性 基板之該幾何中心區域向外的一徑向方向上逐漸地緻密 化該多孔性基板之内部區域;及 在该緻欲化製程結束時使該功率位準降至愛 Γ' 16 ·如請求項1之方法,其進一步 行之熱處理,該熱處理包含: 包含一在緻密化之後所執 自该反應室完全排放該液體前驅物; 以一惰性氣體來淨化該反應室; i在約難1至約鳩。c之間的—溫度下感應性地加熱 該惰性氣體氣氛中之該緻密化多孔性基板,同時維持約 760托至約780托之一壓力;及 使該感應性加熱降至零以結束熱處理。1 7. —種用於使用一液體基質前驅物來緻密化多孔性預成型 坯之反應器,其包含·· 一反應室; 至少一感應線圈加熱總成,其安置於該反應室中; 一流體含量指示器,其用於監控液體前驅物消耗; 用於在緻迸化製程期間添加液體前驅物之構件· 用於以惰性氣體來淨化該反應室之構件; 構造及配置 别驅物返回 一蒸氣回收系統,其連接至該反應室且經 以冷凝該反應室中之前驅物蒸氣且使該冷凝 123480.doc 200812934 至該反應器容器; 一排出系統,其將該蒸氣回收系統及用於淨化之該構 件連接至一熱氧化器;及 加壓構件,其用於在緻密化期間將一反應器壓力維持 於約760托與約780托之間。123480.doc
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- 2007-08-07 EP EP07788292A patent/EP2049453A2/en not_active Withdrawn
- 2007-08-07 US US12/376,399 patent/US20100297360A1/en not_active Abandoned
- 2007-08-07 CA CA002658615A patent/CA2658615A1/en not_active Abandoned
- 2007-08-07 EP EP07802524.4A patent/EP2050311B1/en active Active
- 2007-08-07 WO PCT/EP2007/058197 patent/WO2008017678A2/en not_active Ceased
- 2007-08-07 WO PCT/EP2007/058193 patent/WO2008017676A2/en not_active Ceased
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