200819752 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於接觸被檢杳、 之電性特性之探針。 ~ 以檢查被檢查體 【先前技術】 例如形成於半導體晶圓上之IC、L 特性檢查，通常係使用探針裝 電子讀之電性 卡，在該探針卡之下面側支持”褒置八有‘針 性特性檢查，係藉由使此等多數量之二=電:曰圓:電 複二電極：:探針與電極塾之間交接電性 通嗶，在檢查前之電極墊表面上，係 氧化膜。因此，檢杳時將〜成有H緣性之 愿蚀甘奇針向電極塾沿垂直方向用力擠 反’使其貝通氧化膜，或偾$ 儿 4b ^ α ^針&水平方向移動而擦除氧 膜’來谋求探針與電極墊之電性導通。 然:而，探針之種類大體分為上下方向較長之垂直型探針 專利文獻υ，及懸臂樑之所謂懸臂型探針（參照專利 文獻2)。垂直型探針因係插通於探針卡之垂直方向的通 孔，故水平方向之動作受限制，不易進行氧化膜之擦除。 入，來 、例如專⑺文獻1提出在探針之前端形a ®弧狀之刀 片並將該探針向電極墊擠遷而使其在垂直方向進 謀求探針與電極墊之通電之方法。 [專利文獻1]日本專利公開公報特開綱卜5〇979號 [專利文獻2]日本公開公報特開彻6七術4號 【發明内容】 121849.doc 200819752 [發明所欲解決之問題] 但是該情形例如在電極墊上形成如鋁氧化膜此種比較硬 之氧化膜時，探針之刀片未充分進入氧化膜内，探針與電 極塾間之接觸電阻變大，又該接觸電阻之值亦不穩定。因 此’無法充分且穩定地進行探針與電極墊之電性接觸。200819752 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a probe for contacting an electrical property of a test object. ~ Inspecting the object to be inspected [Prior Art] For example, IC and L characteristic inspections formed on a semiconductor wafer are usually used to mount an electronic card with an electronic readout, and support the "eight" on the underside of the probe card. There is a 'needle characteristic check, by making this number of two = electricity: round: electric double electrode:: the probe and the electrode 交 between the electrical continuity, on the surface of the electrode pad before the inspection It is an oxide film. Therefore, when the inspection is carried out, the H-carrying wishing ganoderma needle is forced to the electrode 塾 in the vertical direction to make it a Betton oxide film, or 偾$4b^α^Needle & The horizontal direction moves and the oxygen film is erased to seek electrical conduction between the probe and the electrode pad. However, the type of the probe is roughly divided into a vertical probe patent document having a long vertical direction, and a cantilever beam. The cantilever type probe (see Patent Document 2). Since the vertical type probe is inserted into the through hole in the vertical direction of the probe card, the operation in the horizontal direction is restricted, and the oxide film is not easily erased. , for example, (7) Document 1 proposes an a ® arc-shaped blade in front of the probe and will In the method of squeezing the probe to the electrode pad, the probe and the electrode pad are energized in the vertical direction. [Patent Document 1] Japanese Laid-Open Patent Publication No. 5 979 [Patent Document 2] Japanese Patent Publication JP-A-6, No. 4 [Summary of the Invention] 121849.doc 200819752 [Problem to be Solved by the Invention] However, in this case, for example, when a relatively hard oxide film such as an aluminum oxide film is formed on an electrode pad, the blade of the probe is not When the film enters the oxide film sufficiently, the contact resistance between the probe and the electrode is increased, and the value of the contact resistance is also unstable. Therefore, the electrical contact between the probe and the electrode pad cannot be sufficiently and stably performed.
然而，所謂懸臂型之探針，因為係使探針之前端沿水平 方向移動而擦除氧化膜，故與垂直型之探針相比較，在氧 化膜之除去月b力上是為優越。但是，在探針之接觸器之前 端，或與該前端相對之晶圓之電極墊上，偶然存有微粒等 之情形時，探針與電極墊之電性接觸即無法進行，電性接 觸之準確性不夠充足。 本發明係藜於該點所完成者，目的在於充分且穩定地進 行晶圓等之被檢查體與探針間之電性接觸。 [解決問題之技術手段] 用於達成前述目的之本發明係一種探針，其特徵在於其 係用於與被檢查體接觸以檢查被檢查體之電性特性者，且 在探針之前端部形成相對之複數根接觸器，前述複數根接 觸器被被檢查體擠壓時向内侧-曲’其前端向相互接近之 方向移動。 數根接觸器接觸被檢查體進行檢查，故可以顯著地提高探 針與被檢查體之接觸之可靠性。 依照本發明’因為複數根接觸器移動可削除被檢查體之 表面之氧化膜’故可以充分且穩定地擦除氧化膜，充分且 穩定地降低探針與接觸！！之間之㈣電阻。又，因為使複 121849.doc 200819752 亦可形成為前述探針之前端部具有基部；且前述複數根 接觸器’其後端分別連接於基部，其前端侧隨㈣離前述 基部而相互接近。 ^可在前述接觸器之内侧形成用於維持前述複數根接觸 器前端彼此之間隔之止擋器（st〇pper)。 亦可在前述各接觸器前端之内侧形成垂直面，且在該垂 直面形成凹部。However, the so-called cantilever type probe is excellent in the removal of the oxide b of the oxide film as compared with the vertical type probe because the front end of the probe is moved in the horizontal direction to erase the oxide film. However, when the front end of the contactor of the probe or the electrode pad of the wafer opposite to the front end is accidentally stored with particles or the like, the electrical contact between the probe and the electrode pad cannot be performed, and the electrical contact is accurate. Not enough enough. The present invention has been made in view of the above, and an object thereof is to sufficiently and stably perform electrical contact between a test object such as a wafer and a probe. [Technical means for solving the problem] The present invention for achieving the aforementioned object is a probe characterized in that it is used for contacting an object to be inspected to inspect an electrical characteristic of the object to be inspected, and at the front end of the probe. A plurality of opposing contactors are formed, and the plurality of contactors are moved toward the inner side of the inner side of the inner side of the object to be moved toward each other. A plurality of contactors are inspected by the object to be inspected, so that the reliability of the contact between the probe and the object to be inspected can be remarkably improved. According to the present invention, since the plurality of contactors move to remove the oxide film on the surface of the object to be inspected, the oxide film can be sufficiently and stably erased, and the probe and the contact are sufficiently and stably reduced! ! Between the (four) resistance. Further, since the front end portion of the probe has a base portion, and the rear end of the plurality of contactors ′ is respectively connected to the base portion, the front end sides thereof are close to each other with the base portion. A stopper for maintaining the interval between the front ends of the plurality of contactors may be formed inside the contactor. A vertical surface may be formed inside the front end of each of the contactors, and a concave portion may be formed on the vertical surface.
則述接觸器亦可係兩根。又，前述探針亦可係垂直型。 [發明$效杲] 依本發明，因可充分且穩定地維持探針與被檢查體間之 接觸電阻於較低程度，故可以高精度且穩定地進行被檢查 體之電性特性檢查。 【實施方式】 以下，茲就本發明之較佳實施形態進行說明。圖丨係顯 示使用本發明之探針之探針裝置i其構成之概略的侧視 圖。 在探針裝置1設置例如探針卡2，及載置作為被檢查體之 晶圓W之載置台3。載置台3可沿上下方向及左右方向而移 動自如。 探針卡2具備有例如支持複數個探針10之支持板^，及 對探針10交接電性信號之電路基板i 2。支持板11例如形成 為圓盤狀，且與下方之載置台3相對向。支持板π上係例 如圖2所示，形成有水平剖面呈長方形之複數個導向孔 20 〇 121849.doc 200819752 各導向孔20係如圖3所示，沿上下方向貫通支持板u， 且在前述各導向孔20内，插入有上下方向較長之垂直型之 探針10。 探針10例如係由下部之前端部30、連接於該前端部30上 部之彈簧部3 1、及該彈簧部3 1之上部的後端部32所組成。 探針1〇之後端部32，係配置於導向孔20之上端面，且形 成為較導向孔20之直徑大。後端部32之上表面係平坦地形 成’且接觸於電路基板12之下面端子i2a而與電路基板12 電性連接。在後端部32之下面側的周緣部形成階差部 32a’該階差部32a卡止於導向孔2〇之上端面，藉此探針1〇 係支持於支持板11上。 彈簧部31例如具有沿上下方向連續之帶狀的波型形狀， 且在上下方向具有彈性。彈簧部31之上端係連接於後端部 32之下表面’且在彈簧部31之下端連接前端部3〇。 前端部30係例如由基部40 ,及兩根接觸器41、42組成。 基部40具有大致方形之平板形狀，基部⑽之水平方向之寬 度係形成為僅略小於導向孔20之直徑。藉此，基部4〇沿導 向孔20之内壁上下運動，實現作為導向孔2〇内之探針1〇之 導向件的功能。 兩根接觸器41、42例如係形成為有撓性之細長針狀。接 觸器41、42連接於基部40之下表面。接觸器41、42係從基 部40下面之兩端部朝向中心側之斜下方向形成。亦即，接 觸器41、42形成為其後端連接於基部4〇下表面之兩端部， 且其别知側卩現者运離基部4 0而逐漸接近。此等接觸写41、 121849.doc 200819752 42係突出於導向孔2〇之下方。 如圖4所示，接觸器41與接觸器42之前端，在相距特定 距離之狀態下彼此相對向。接觸器41前端之内侧形成有垂 直面41a，在該垂直面41a之上部形成有凹部41b。在凹部 4lb之上侧，形成有較垂直面41a更向内侧突出之止擋器 41c。接觸器42之前端亦與接觸器41同樣地具備有垂直面 42a、凹部42b、及止擋器42c。接觸器42之垂直面42a、凹 部42b、及止擋器42〇，與接觸器41之垂直面41&、凹部 41b、及止擋器41c分別相對向。並且，本實施形態之探針 10，係例如藉由LIGA製程（藉由X射線光學微影、電鑄、 成型進行之微細元件製程）而成形。 其次，說明如上構成之探針10之作用。在探針裝置工， 開始晶圓W之電性特性之檢查時，載置台3上之晶圓臀上 昇，如圖5所示，晶圓w上之各電極墊p接觸於各探針1〇之 接觸器41、42。 且晶圓W進一步上昇，電極墊p擠壓探針1〇時，如圖6所 不，接觸器41、42向内部彎曲，接觸器41、42之前端一面 摩擦電極墊P之表面一面向内側移動。此時，藉由接觸器 41、42，電極墊p表面上之氧化膜予以擦除。之後，接觸 器41、42之前端彼此接近時，止擋器41e、42c彼此抵接， 停止接觸器41、42向内侧之移動。此時，接觸器4丨之垂直 部41a與接觸器42之垂直部42a之間隔，係例如維持於1〇 μιη以上，又，在凹部4ib、42b彼此之間形成空隙Ή。 爾後，從探針卡2之電路基板12經由各探針10之兩根接 121849.doc 200819752 觸器41、42，向晶圓W之電極墊p傳送電性信號，進行晶 圓W之電性特性檢查。 依照以上之實施形態，在探針10之前端部30形成相對向 之兩根接觸器41、42，該等接觸器41、42受到晶圓曹之電 極墊P擠壓時係向内側彎曲，其前端在電極墊p之表面上向 内侧移動。如此，雖然係垂直型之探針1〇，但可使用兩根 接觸器41、42來擦除電極墊P表面之氧化膜，可以充分且 穩定地降低探針10與電極墊P之接觸電阻。又，因為進行 檢查時，經由各探針10之兩根接觸器41、42來傳送電性= 唬，故探針10與電極墊P間之電性導通之準確性增加，可 以顯者地提面檢查之可靠性。 因為在接觸器41、42之前端内侧形成止撐器仏、仏， 且維持接觸器41、42前诚侦士夕M_The contactor can also be two. Further, the probe may be of a vertical type. According to the present invention, since the contact resistance between the probe and the test object can be sufficiently and stably maintained at a low level, the electrical property inspection of the test object can be performed with high accuracy and stability. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described. The figure shows a schematic side view of the probe device i using the probe of the present invention. The probe device 1 is provided with, for example, a probe card 2 and a mounting table 3 on which a wafer W as a test object is placed. The mounting table 3 is movable in the up and down direction and the left and right direction. The probe card 2 is provided with, for example, a support board for supporting a plurality of probes 10, and a circuit board i 2 for transferring an electrical signal to the probe 10. The support plate 11 is formed, for example, in a disk shape and faces the lower stage 3 . The support plate π is, for example, as shown in FIG. 2, and a plurality of guide holes 20 having a horizontal cross section are formed. 〇121849.doc 200819752 Each guide hole 20 is connected to the support plate u in the up-and-down direction as shown in FIG. A vertical probe 10 having a long vertical direction is inserted into each of the guide holes 20. The probe 10 is composed of, for example, a lower front end portion 30, a spring portion 31 connected to the upper portion of the front end portion 30, and a rear end portion 32 of the upper portion of the spring portion 31. The end portion 32 of the probe 1 is disposed on the upper end surface of the guide hole 20 and is formed to have a larger diameter than the guide hole 20. The upper surface of the rear end portion 32 is flatly formed and electrically connected to the circuit board 12 in contact with the lower terminal i2a of the circuit board 12. The step portion 32a' is formed on the peripheral portion of the lower surface side of the rear end portion 32. The step portion 32a is locked to the upper end surface of the guide hole 2, whereby the probe 1 is supported by the support plate 11. The spring portion 31 has, for example, a stripe shape that is continuous in the vertical direction, and has elasticity in the vertical direction. The upper end of the spring portion 31 is coupled to the lower surface portion ' of the rear end portion 32 and is connected to the front end portion 3'' at the lower end of the spring portion 31. The front end portion 30 is composed of, for example, a base portion 40 and two contactors 41 and 42. The base portion 40 has a substantially square flat plate shape, and the width of the base portion (10) in the horizontal direction is formed to be only slightly smaller than the diameter of the guide hole 20. Thereby, the base portion 4 is moved up and down along the inner wall of the guide hole 20, thereby realizing the function as a guide for the probe 1 in the guide hole 2''. The two contactors 41, 42 are formed, for example, in the shape of a flexible needle. The contacts 41, 42 are attached to the lower surface of the base 40. The contactors 41 and 42 are formed obliquely downward from the both end portions of the lower surface of the base portion 40 toward the center side. That is, the contactors 41, 42 are formed such that their rear ends are connected to both end portions of the lower surface of the base portion 4, and it is known that the side players are gradually moved away from the base portion 40. These contact writes 41, 121849.doc 200819752 42 protrude below the guide holes 2〇. As shown in Fig. 4, the contactor 41 and the front end of the contactor 42 are opposed to each other at a certain distance from each other. A vertical surface 41a is formed inside the front end of the contactor 41, and a concave portion 41b is formed on the upper surface of the vertical surface 41a. On the upper side of the recessed portion 4lb, a stopper 41c projecting more inward than the vertical surface 41a is formed. Similarly to the contactor 41, the front end of the contactor 42 is provided with a vertical surface 42a, a concave portion 42b, and a stopper 42c. The vertical surface 42a, the recess 42b, and the stopper 42A of the contactor 42 are opposed to the vertical faces 41&, the recess 41b, and the stopper 41c of the contactor 41, respectively. Further, the probe 10 of the present embodiment is formed by, for example, a LIGA process (fine element process by X-ray optical lithography, electroforming, molding). Next, the action of the probe 10 configured as above will be explained. When the probe device starts the inspection of the electrical characteristics of the wafer W, the wafer hip on the mounting table 3 rises. As shown in FIG. 5, the electrode pads p on the wafer w are in contact with the respective probes. Contactors 41, 42. When the wafer W is further raised and the electrode pad p is pressed against the probe 1 ,, as shown in FIG. 6, the contactors 41 and 42 are bent inward, and the front ends of the contactors 41 and 42 are rubbed against the surface of the electrode pad P to face the inside. mobile. At this time, the oxide film on the surface of the electrode pad p is erased by the contactors 41, 42. Thereafter, when the front ends of the contactors 41, 42 approach each other, the stoppers 41e, 42c abut each other, and the inward movement of the contactors 41, 42 is stopped. At this time, the distance between the vertical portion 41a of the contactor 4 and the vertical portion 42a of the contactor 42 is maintained at, for example, 1 〇 μη or more, and a gap 形成 is formed between the concave portions 4ib and 42b. Then, an electrical signal is transmitted from the circuit board 12 of the probe card 2 to the electrode pads p of the wafer W via the two contacts 121849.doc 200819752 contactors 41 and 42 of the probes 10, and the electrical properties of the wafer W are performed. Feature check. According to the above embodiment, the end portions 30 of the probe 10 are formed with two contactors 41 and 42 facing each other. When the contactors 41 and 42 are pressed by the electrode pad P of the wafer, they are bent inward. The front end moves inward on the surface of the electrode pad p. As described above, although the vertical type probe is used, the two contactors 41 and 42 can be used to erase the oxide film on the surface of the electrode pad P, and the contact resistance between the probe 10 and the electrode pad P can be sufficiently and stably reduced. Moreover, since the electrical conductivity = 唬 is transmitted through the two contactors 41 and 42 of the probes 10 during the inspection, the accuracy of the electrical conduction between the probe 10 and the electrode pad P is increased, and it is possible to The reliability of the surface inspection. Because the retainers 仏, 仏 are formed on the inner side of the front end of the contactors 41, 42 and the contactors 41, 42 are maintained before the Chengshi Shi M_
接觸器41、42之磨 ^ ’移動寬度只要5 W羽夕餘之微租屋生。又，接 耗減少，並可延長探針10之壽命。再者， 以上即可充分地擦除氧化膜。 42之前端内侧形成凹部4ib、 又’因為在接觸器41、42之前端内細 12184$.doc 200819752 42b，故當接觸器4i、42之前端彼此接近時，在該等前端 之間开》成空間Η，藉此，可防止在接觸器41、42之前端之 間夾入氧化膜之切屑。 一般而言，垂直型之探針相較於所謂懸臂型之探針，因 為不需要安裝空間，故可以謀求探針卡2之窄間距化、多 探針化。因此，依照本實施形態之垂直型探針1〇，可充分 . 且穩定地確保如上所述之探針10與電極墊ρ間之電性接 善 觸’而且可以謀求多探針化、窄間距化。 以上之實施形態中，可將本發明適用於垂直型之探針， 但本發明亦可如圖7所示，適用於懸臂樑之所謂懸臂型之 探針1〇。該情形下，因為藉由兩根接觸器41、42進行擦 除，以兩根接觸器41、42謀求電性導通，故可以提高接觸 器41、42與電極墊ρ之電性接觸之準確性。又，因為可以 減少各接觸器41、42之移動寬度，故接觸器41、42之磨耗 減少，可以延長探針10之壽命。 • 雖然在以上之實施形態中，探針10之接觸器的數量係2 根，但並不限定於2根，亦可係3根以上。該情形，例如亦 可如圖8所不，楝針前端部之基部5〇形成為立體形狀，例 _ 如圓柱开〆，並在該基部50之下表面上形成複數根（圖8係3 ， 根）之相對之接觸器51。 以上，參照附圖說明本發明之較佳實施形態，但本發明 並不限疋於此例。當業者當得明白，在記載於申請專利範 圍内之思想的範嘴内，可想到各種之變更例或修正例，此 等亦理所當然地屬於本發明之技術範圍。例如在以上之實 121849.doc 200819752 施形態中，係在接觸器41、42形成止擋器41c、42c之例， 但亦可無止擋器41c、42c。該情形，例如因為進行摩擦時 接觸器41、42係抵接，而實現作為止擋器之功能，故接觸 器41、42之移動寬度限制在合適之距離，可以抑制例如多 餘之微粒產生。又，可以延長探針1G之壽命。例如探針1〇 之接觸器，只要係當受到晶圓w擠壓時向内側彎曲，前端 向相互接近之方向移位者，即可為其他形狀。又，探針ι〇The contact movement of the contactors 41, 42 is as long as 5 W feathers. Moreover, the loss is reduced and the life of the probe 10 can be extended. Furthermore, the oxide film can be sufficiently erased as described above. The inner side of the front end 42 is formed with a recess 4ib, and 'because the front end of the contactors 41, 42 is thin 12184$.doc 200819752 42b, when the front ends of the contactors 4i, 42 are close to each other, between the front ends The space Η, whereby the chips of the oxide film are sandwiched between the front ends of the contactors 41, 42. In general, the vertical probe is smaller in pitch and multi-probe than the probe of the so-called cantilever type because the mounting space is not required. Therefore, according to the vertical probe 1 of the present embodiment, the electrical contact between the probe 10 and the electrode pad ρ as described above can be sufficiently and stably ensured, and multi-probe and narrow pitch can be achieved. Chemical. In the above embodiment, the present invention can be applied to a vertical type probe. However, the present invention can also be applied to a so-called cantilever type probe 1 of a cantilever beam as shown in Fig. 7. In this case, since the two contactors 41 and 42 are electrically driven by the two contactors 41 and 42, the electrical contact between the contactors 41 and 42 and the electrode pad ρ can be improved. . Further, since the movement width of each of the contactors 41, 42 can be reduced, the wear of the contactors 41, 42 is reduced, and the life of the probe 10 can be extended. • In the above embodiment, the number of contactors of the probe 10 is two, but it is not limited to two, and may be three or more. In this case, for example, as shown in Fig. 8, the base portion 5 of the front end portion of the boring needle is formed in a three-dimensional shape, for example, a cylindrical opening, and a plurality of roots are formed on the lower surface of the base portion 50 (Fig. 8 is 3). The opposite of the contactor 51. The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the examples. It is to be understood by those skilled in the art that various changes and modifications are conceivable within the scope of the invention described in the claims. For example, in the above embodiment, the stoppers 41c and 42c are formed in the contactors 41 and 42, but the stoppers 41c and 42c may be omitted. In this case, for example, since the contactors 41 and 42 are abutted against friction, the function as a stopper is realized, so that the moving width of the contacts 41 and 42 is restricted to an appropriate distance, and for example, generation of excessive particles can be suppressed. Moreover, the life of the probe 1G can be extended. For example, the contactor of the probe 1 即可 can be other shapes as long as it is bent inward when pressed by the wafer w and displaced in the direction in which the tips are moved toward each other. Again, the probe ι〇
之接觸器以外之部分，亦可係具有其他形狀者。又，本發 明亦可適用於被檢查體係晶圓w以外之FpD(平面 / 等其他基板。 ’斋） [產業上之可利用性] 電 本發明在充分且穩定地降低被檢查體與探針間之接觸 阻上係為有用。 【圖式簡單說明】 圖1係顯示探針裝置構成之概略之側視圖。 圖2係支持板之俯視圖。 圖3係顯 圖0 示探針插入導向孔之樣態之支持板 的縱剖面 圖4係探針前端之放大圖。 圖5係晶圓接觸時之探針前端之放大圖。 圖6係受到晶圓擠壓時之探針前端之放大圖。 圖7係懸臂型探針之側視圖。 圖8係具備3根接觸器時之探針前端之立體圖。 【主要元件符號說明】 121849.doc -12- 200819752 1 探針裝置 2 探針卡 10 探針 11 支持板 12 電路基板 12a 下面端子 20 導向孔 30 前端部 31 彈簧部 32 後端部 32a 階差部 40 基部 41，42 接觸器 P 電極墊 W 晶圓 121849.doc -13-The part other than the contactor may be of other shapes. Further, the present invention is also applicable to FpD (plane/etc. other substrates) of the inspection system wafer w. [Industrial Applicability] The present invention sufficiently and stably reduces the object to be inspected and the probe The contact resistance between the two is useful. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic side view showing the configuration of a probe device. Figure 2 is a top view of the support board. Fig. 3 is a longitudinal sectional view of the support plate in which the probe is inserted into the guide hole. Fig. 4 is an enlarged view of the front end of the probe. Figure 5 is an enlarged view of the probe tip at the time of wafer contact. Figure 6 is an enlarged view of the probe tip as it is squeezed by the wafer. Figure 7 is a side view of a cantilever type probe. Fig. 8 is a perspective view of the probe tip when three contactors are provided. [Major component symbol description] 121849.doc -12- 200819752 1 Probe device 2 Probe card 10 Probe 11 Support plate 12 Circuit board 12a Lower terminal 20 Guide hole 30 Front end portion 31 Spring portion 32 Rear end portion 32a Step portion 40 base 41, 42 contactor P electrode pad W wafer 121849.doc -13-