200818311 九、發明說明 【發明所屬之技術領域】 本發明是關於傳熱構造及基板處理裝置，尤其配置在 基板處理裝置之減壓處理室內的傳熱構造體。 【先前技術】 通常，使用電漿處理基板之基板處理裝置是以蝕刻裝 置廣受人知，該基板處理裝置具備在內部產生電漿之減壓 處理室（腔室），該腔室內配置有載置當作基板之晶圓的載 置台。該載置台具備配置在該載置台之上部之圓板狀的靜 電夾具（ESC)，和配置在該靜電夾具上面之外周緣之例如 由矽所構成之聚焦環。 於對晶圓施予鈾刻處理時，在靜電夾具上載置晶圓之 後，減壓腔室內，將處理氣體例如由c4F8氣體、02氣體 及Ar氣體所構成之混合氣體導入腔室內，將高頻電流供 給至腔室內自混合氣體產生電漿。藉由施予蝕刻處理，晶 圓溫度雖然上昇，但是該晶圓藉由內藏靜電夾具之冷卻機 構被冷卻，於該冷卻之時’將熱傳達性優良之氨（He)氣體 自靜電夾具上面流向晶圓背面’藉由提升靜電夾具和晶圓 之間的熱傳達性’有效率冷卻晶圓。 另外，聚焦環之背面和靜電夾具之外周緣部之上面之 界面因是固體彼此接觸之界面’故聚焦環和靜電夾具之密 著度低，在該界面產生微小間隙。尤其’飩刻處理中腔室 被減壓，故該些間隙形成真空隔熱層’ ’靜電夾具和聚焦 -4- 200818311 環之間的熱傳達性變低，無法如晶圓般效率佳冷卻聚焦環 ，其結果，聚焦環之溫度比晶圓溫度高。 當聚焦環之溫度變高時，晶圓之外周緣部之溫度比該 內側部高，晶圓中之蝕刻處理之面內均勻性變差。 再者，於飩刻處理時，產生反應生成物，該反應生成 物當作聚合物膜附著於腔室之側壁或聚焦環，該附著之聚 合物膜雖然保護聚焦環不受電漿影響等而防止聚焦環等消 φ 耗，但是如第5圖曲線圖所示，聚合物之膜厚是當附著對 象物（聚焦環等）之溫度上昇時則變小。因此，如上述般， 聚焦環之溫度高時，反應生成物之聚合物則難以附著於聚 焦環，因聚焦環直接被電漿曝曬，故聚焦環之消耗變快。 並且，因藉由所形成之真空隔熱層聚焦環效率佳被冷 卻，故隨著時間經過蓄積熱；在相同批次之晶圓之鈾刻處 理中各晶圓處理時之聚焦環之溫度不成爲一定，製程性能 惡化，例如各晶圓中之蝕刻率之分布形態不同。 • 在此，本案申請人提案提高聚焦環和靜電夾之密著度 ，提升靜電夾具和聚焦環之間的熱傳達性的對策。具體而 言，使聚焦環和靜電夾具之間存在由導電性矽膠等之具有 耐熱性的彈性構件所形成之熱傳導媒體（例如參照專利文 獻1)。 該對策中，熱傳導媒體是在聚焦環和靜電夾具之間變 形。依此，提升靜電夾具及聚焦環之密著度，並且提升靜 電夾具及聚焦環之熱傳達性。 [專利文獻1]日本特開2002- 1 6 1 26號公報 200818311 【發明內容】 但是，近年來，晶圓中之餽刻處理之面內均勻性之要 求水準越來越高，再者，要求消耗零件之聚焦環之長壽命 化，其結果，要求將蝕刻處理中之聚焦環的溫度維持在 22 5 t：以下。另外，熱傳導構件之導電性矽膠流動性低， 故無法掩埋聚焦環和靜電夾具之界面的微小間隙，其結果 ，藉由夾著熱傳導構件提升靜電夾具及聚焦環之熱傳達性 則有限度，要將蝕刻處理中之聚焦環溫度維持在225 °C以 下爲困難。 本發明之目的爲提供可以將基板之蝕刻處理中之聚焦 環溫度維持在225 °C以下的傳熱構造體及基板處理裝置。 [用以解決課題之手段]BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat transfer structure and a substrate processing apparatus, and more particularly to a heat transfer structure disposed in a pressure reduction processing chamber of a substrate processing apparatus. [Prior Art] Generally, a substrate processing apparatus using a plasma-treated substrate is widely known as an etching apparatus having a pressure-reduction processing chamber (chamber) in which plasma is generated, and a chamber is disposed in the chamber. A mounting table for a wafer as a substrate. The mounting table includes a disc-shaped electrostatic chuck (ESC) disposed on the upper portion of the mounting table, and a focus ring formed of, for example, a rim disposed on the outer periphery of the upper surface of the electrostatic chuck. When the wafer is subjected to uranium engraving, after the wafer is placed on the electrostatic chuck, a mixed gas of a processing gas such as c4F8 gas, 02 gas, and Ar gas is introduced into the chamber, and the high frequency is introduced into the chamber. Current is supplied to the chamber to generate plasma from the mixed gas. By applying the etching treatment, although the wafer temperature rises, the wafer is cooled by the cooling mechanism of the built-in electrostatic chuck, and at the time of the cooling, the ammonia (He) gas excellent in heat transfer property is self-assembled from the electrostatic chuck. Flow to the back of the wafer 'by efficiently improving the thermal transfer between the electrostatic chuck and the wafer' to efficiently cool the wafer. Further, the interface between the back surface of the focus ring and the upper surface of the peripheral portion of the electrostatic chuck is an interface where the solids contact each other, so the adhesion between the focus ring and the electrostatic chuck is low, and a minute gap is generated at the interface. In particular, the chamber is decompressed during the engraving process, so the gaps form a vacuum insulation layer. 'Electrostatic fixtures and focusing -4- 200818311 The heat transfer between the rings is low, and it is not as efficient as wafers. As a result, the temperature of the focus ring is higher than the temperature of the wafer. When the temperature of the focus ring becomes higher, the temperature at the outer peripheral portion of the wafer is higher than that of the inner portion, and the in-plane uniformity of the etching treatment in the wafer is deteriorated. Further, in the engraving treatment, a reaction product is produced, and the reaction product is attached as a polymer film to the side wall of the chamber or the focus ring, and the attached polymer film prevents the focus ring from being affected by the plasma, etc. The focus ring is equal to the φ consumption, but as shown in the graph of Fig. 5, the film thickness of the polymer becomes smaller as the temperature of the attached object (focus ring or the like) rises. Therefore, as described above, when the temperature of the focus ring is high, the polymer of the reaction product hardly adheres to the focus ring, and since the focus ring is directly exposed to the plasma, the consumption of the focus ring becomes faster. Moreover, since the vacuum insulation layer is formed by the vacuum insulation layer, the efficiency is preferably cooled, so that the heat is accumulated over time; in the uranium engraving process of the same batch of wafers, the temperature of the focus ring is not processed during each wafer processing. The process performance is degraded, for example, the distribution pattern of the etching rate in each wafer is different. • Here, the applicant proposed to increase the adhesion between the focus ring and the electrostatic chuck to improve the heat transfer between the electrostatic chuck and the focus ring. Specifically, a heat transfer medium formed of an elastic member having heat resistance such as conductive silicone is present between the focus ring and the electrostatic chuck (see, for example, Patent Document 1). In this countermeasure, the heat transfer medium is deformed between the focus ring and the electrostatic chuck. Accordingly, the adhesion of the electrostatic chuck and the focus ring is increased, and the heat transfer of the electrostatic chuck and the focus ring is improved. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2002-1666.1, JP-A No. 200818311 [Invention] However, in recent years, the level of in-plane uniformity of the feed-in process in the wafer has become higher and higher, and further, The life of the focus ring of the consumable part is prolonged, and as a result, it is required to maintain the temperature of the focus ring in the etching process at 22 5 t: or less. Further, since the conductivity of the conductive member of the heat conduction member is low, it is impossible to bury a small gap between the focus ring and the interface of the electrostatic chuck, and as a result, the heat transfer property of the electrostatic chuck and the focus ring is limited by the heat conduction member. It is difficult to maintain the temperature of the focus ring in the etching process below 225 °C. SUMMARY OF THE INVENTION An object of the present invention is to provide a heat transfer structure and a substrate processing apparatus which can maintain a focus ring temperature in an etching process of a substrate at 225 ° C or lower. [Means to solve the problem]
爲了達成上述目的，申請專利範圍第1項所記載之傳 熱構造體爲被配置在減壓環境下對基板施予電漿處理之處 理室內的傳熱構造體，其特徵爲具有：擁有對電漿露出之 露出面的消耗零件；冷卻該消耗零件之冷卻零件；被配置 在上述消耗零件及上述冷卻零件之間，並且由凝膠狀物質 所構成之熱傳導構件，上述熱傳導構件中之以ASKER-C 所表示之硬度對以W/m · K所表示之熱傳導率的比未滿20 〇 申請專利範圍第2項所記載之傳熱構造體是第1項所記 載之傳熱構造體中，上述消耗零件是以包圍上述基板之外 -6- 200818311 緣而配置之圓環狀構件，上述冷卻零件爲載置上述基板及 上述圓環狀構件之載置台。 爲了達成上述目的，申請專利範圍第3項之基板處理 裝置，爲具備在減壓環境下對基板施予電漿處理之處理室 ;和被配置在該處理室內之傳熱構造體的基板處理裝置， 其特徵爲：上述傳熱構造體具有：擁有對電槳露出之露出 面的消耗零件；冷卻該消耗零件之冷卻零件；和配置在上 述消耗零件及上述冷卻零件之間，並且由凝膠狀物質所構 成之熱傳導構件，上述熱傳導構件中之以ASKER-C所表 示之硬度對以W/m · K所表示之熱傳導率的比未滿20。 [發明效果] 若藉由申請專利第1項所記載之傳熱構造體及申請專 利範圍第3項所記載之基板處理裝置時，在擁有對電漿露 出之露出面的消耗零件及冷卻該消耗零件之冷卻零件之間 由凝膠狀物質所構成之熱傳導構件，該熱傳導構件中之以 ASKER-C所表示之硬度對以W/m · K所表示之熱傳導率 的比未滿20。凝膠狀物質因掩埋消耗零件和冷卻零件之界 面的微少間隙，熱傳導構件中之以ASKER-C所表示之硬 度對以W/m · K所表示之熱傳導率的比未滿20，故可以使 消耗零件及冷卻零件之熱傳達性比以往提升。其結果，可 以使基板之蝕刻處理中之消耗零件之溫度維持於225 °C以 下。 若藉由申請專利範圍第2項所記載之傳熱構造體，因 200818311 消耗零件是以包圍上述基板之外緣而配置之圓環狀構件’ 冷卻零件爲載置基板及圓環狀構件之載置台，故可以將基 板之飩刻處理中之圓環狀構件之溫度維持在225 °c以下’ 其結果可以滿足被載置在載置台之基板中之蝕刻處理之面 內均勻性之要求水準，並且可以延長圓環狀之壽命。 【實施方式】 以下，針對本發明之實施形態參照圖面予以說明。 首先，針對具備本發明之實施形態所涉及之傳熱構造 體的基板處理裝置予以說明。 第1圖微表示具備本實施形態傳熱構造體之基板處理 裝置之槪略構成的剖面圖。該基板處理裝置構成對形成在 當作基板之半導體晶圓上的多晶矽層施予飩刻處理。 在第1圖中，基板處理裝置1 0具有用以收容例如直徑 300mm之半導體晶圓（以下單稱爲「晶圓」）W之腔室11( 處理室），在該腔室11內配置有當作載置晶圓W之圓柱狀 之感應器12(冷卻零件）。在基板處理裝置10中，藉由腔室 11之內側壁和感應器12之側面，形成當作使感應器12上方 之氣體排出至腔室1 1外之流路而發揮功能之側方排氣路1 3 。該側方排氣路13之途中配置有排氣板14。腔室11之內壁 面是以石英或氧化釔（Y2〇3)覆蓋。 排氣板1 4爲具有多數孔之板狀構件，當作將腔室分隔 成上部和下部之分隔板而發揮機能。在藉由排氣板1 4所區 隔之腔室1 1之上部（以下稱爲「反應室」）1 7，產生後述之 -8- 200818311 電漿。再者，在腔室11之下部（以下稱爲「排氣室（多歧管 )」）1 8，開口有排出腔室1 1內之氣體之粗抽排氣管1 5及本 排氣管16。粗抽排氣管15是連接DP (Dry Pump)(無圖式）’ 本排氣管16是連接 TMP(Turbo Molecular Pump)(無圖式） 。再者，排氣板14是捕捉獲反應反應室17中之在後述之處 理空間S中所產生之離子或自由基，防止朝該些多歧管18 洩漏。 粗抽排氣管15及本排氣管16是經多歧管18使反應室17 之氣體排出至腔室11之外部。具體而言，粗抽排氣管15是 使腔室1 1內自大氣壓減壓至低真空狀態，本排氣管1 6是與 粗抽排氣管1 5 —起動作使腔室1 1內減壓至比低真空狀態低 之壓力的高真空狀態（例如，133Pa(lTor〇以下）。 感應器12則經整合器（Matche〇20連接於下部高頻電 源1 9，該下部高頻電源1 9是將特定高頻電力施加至感應器 1 2。依此，感應器1 2當作下部電極發揮功能。再者，下部 整合器20是降低感應器12之高頻電力之反射而使供給至高 頻電力之感應器12之供給效率成爲最大。 感應器1 2之上部配置有在內部具有靜電電極板2 1之靜 電夾具22。在靜電夾具22或具有直徑之下部圓板狀構件上 ，呈現出重疊比該圓板狀構件之直徑小的上部圓板狀構件 之形狀。並且，靜電夾具22是由氧化鋁所構成，在上部板 狀構件之上面溶射陶瓷等。當感應器1 2載置晶圓W時， 該晶圓W被配置在靜電夾具22中之上部圓板狀構件之上 200818311 再者，靜電夾具22是直流電源23電性連接於靜電電極 板2 1。當正的高直流電壓被施加於靜電電極板2 1時，在晶 圓W中之靜電夾具22側之面（以下，稱爲「背面」）產生負 電衛而在靜電電極板21及晶圓W之背面之間產生電位差 ，藉由因該電位差所引起之庫倫力或是 Johnsen-Rahbek 力，晶圓W在靜電夾具22中之上部圓板狀構件之上被吸 著保持。 再者，在靜電夾具22中於下部圓板狀構件之上面無重 疊上部圓板狀構件之部份（以下，稱爲「聚焦環載置面」） ，配置有圓環狀之聚焦環24(消耗零件，圓環狀構件）。該 聚焦環24是由導電性構件例如矽所構成，包圍吸著保持於 靜電夾具22中之上部圓板狀構件之上的晶圓W周圍。再 者，聚焦環24具有露出於處理空間S之露出面，在該處理 空間S電漿朝向晶圓W之表面收斂，提升飩刻處理之效 率。 再者，感應器1 2之內部設置有延伸於圓周方向之環狀 的冷煤室25。該冷煤室25經冷煤用配管26自冷卻單元（無 圖式）循環供給例如冷卻水或Galden。藉由該低溫之冷煤 而被冷卻之感應器12經靜電夾具22冷卻晶圓w及聚焦環 24。因此，本實施形態中，感應器1 2當作直接性冷卻零件 而發揮功能，靜電夾具22當作間接性冷卻零件而發揮功能 。並且，晶圓W及聚焦環24之溫度主要是藉由被循環供 給置冷煤室2 5之冷煤溫度、流量而被控制。In order to achieve the above object, the heat transfer structure according to the first aspect of the invention is a heat transfer structure disposed in a processing chamber in which a substrate is subjected to a plasma treatment in a reduced pressure environment, and has a feature that: a consumable part exposed on the exposed surface; a cooling component for cooling the consumable part; a heat conducting member disposed between the consumable part and the cooling part and composed of a gel-like substance, wherein the heat conducting member is ASKER- The ratio of the hardness indicated by C to the thermal conductivity expressed by W/m · K is less than 20 〇 The heat transfer structure described in the second aspect of the patent application is the heat transfer structure described in the first item, The consumable part is an annular member that is disposed around the edge of the substrate -6-200818311, and the cooling member is a mounting table on which the substrate and the annular member are placed. In order to achieve the above object, a substrate processing apparatus according to a third aspect of the invention is a processing chamber including a plasma processing chamber for applying a plasma treatment in a reduced pressure environment, and a substrate processing apparatus including a heat transfer structure disposed in the processing chamber. The heat transfer structure includes: a consumable part having an exposed surface exposed to the electric paddle; a cooling component that cools the consumable part; and a disposition member disposed between the consumable part and the cooling part, and is gel-like In the heat conduction member composed of the substance, the ratio of the hardness expressed by ASKER-C to the thermal conductivity represented by W/m·K in the heat conduction member is less than 20. According to the heat treatment structure of the first aspect of the invention, and the substrate processing apparatus according to the third aspect of the invention, the consumable parts having the exposed surface of the plasma are exposed and the consumption is cooled. A heat conducting member composed of a gel-like substance between the cooling members of the part, wherein the ratio of the hardness expressed by ASKER-C to the thermal conductivity represented by W/m · K in the heat conducting member is less than 20. The gel-like substance has a small gap between the interface of the consumable part and the cooling part, and the ratio of the hardness expressed by ASKER-C to the thermal conductivity represented by W/m · K in the heat-conducting member is less than 20, so that it can be made The heat transfer of consumable parts and cooling parts is higher than ever. As a result, the temperature of the consumable parts in the etching process of the substrate can be maintained below 225 °C. According to the heat transfer structure described in the second paragraph of the patent application, the 200818311 consumable component is an annular member that is disposed to surround the outer edge of the substrate. The cooling component is the carrier substrate and the annular member. Since the temperature of the annular member in the etching process of the substrate can be maintained at 225 ° C or less, the result can satisfy the required level of the in-plane uniformity of the etching treatment placed on the substrate of the mounting table. And can extend the life of the ring. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a substrate processing apparatus including a heat transfer structure according to an embodiment of the present invention will be described. Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus including the heat transfer structure of the embodiment. The substrate processing apparatus constitutes a dicing process for a polysilicon layer formed on a semiconductor wafer as a substrate. In the first embodiment, the substrate processing apparatus 10 has a chamber 11 (processing chamber) for accommodating, for example, a semiconductor wafer having a diameter of 300 mm (hereinafter simply referred to as "wafer") W, and a chamber 11 is disposed in the chamber 11. It is regarded as a cylindrical inductor 12 (cooling component) on which the wafer W is placed. In the substrate processing apparatus 10, a side exhaust functioning as a flow path for discharging the gas above the inductor 12 to the outside of the chamber 1 is formed by the inner side wall of the chamber 11 and the side surface of the inductor 12. Road 1 3 . An exhaust plate 14 is disposed in the middle of the side exhaust passage 13. The inner wall of the chamber 11 is covered with quartz or yttria (Y2 〇 3). The vent plate 14 is a plate-like member having a plurality of holes, and functions as a partition plate that partitions the chamber into upper and lower portions. The plasma of -8-200818311 to be described later is produced by the upper portion (hereinafter referred to as "reaction chamber") 17 of the chamber 1 partitioned by the exhaust plate 14. Further, in the lower portion of the chamber 11 (hereinafter referred to as "exhaust chamber (multi-manifold)") 18. The gas is exhausted from the exhaust chamber 1 1 and the exhaust pipe is exhausted. 16. The rough exhaust pipe 15 is connected to a DP (Dry Pump) (not shown). The exhaust pipe 16 is connected to a TMP (Turbo Molecular Pump) (not shown). Further, the exhaust plate 14 captures ions or radicals generated in the reaction space S which will be described later in the reaction space S, and prevents leakage to the manifolds 18. The rough exhaust pipe 15 and the present exhaust pipe 16 discharge the gas of the reaction chamber 17 to the outside of the chamber 11 via the manifold 18. Specifically, the rough exhaust pipe 15 decompresses the atmospheric pressure from the atmospheric pressure to the low vacuum state, and the exhaust pipe 16 moves in the chamber 1 1 together with the rough exhaust pipe 15 Depressurize to a high vacuum state with a lower pressure than the low vacuum state (for example, 133 Pa (below TorT). The inductor 12 is connected to the lower high frequency power supply 1 via the integrator (Matche〇20, the lower high frequency power supply 1) 9 is to apply specific high-frequency power to the inductor 12. Thus, the inductor 12 functions as a lower electrode. Further, the lower integrator 20 reduces the reflection of the high-frequency power of the inductor 12 to supply The supply efficiency of the high-frequency power sensor 12 is maximized. The electrostatic chuck 22 having the electrostatic electrode plate 21 inside is disposed on the upper portion of the inductor 12. The electrostatic chuck 22 or the disk-shaped member having the diameter below is present. The shape of the upper disk-shaped member which is smaller than the diameter of the disk-shaped member is overlapped. The electrostatic chuck 22 is made of alumina, and the ceramic is sprayed on the upper plate-shaped member. When the inductor 12 is placed When the wafer W is used, the wafer W is disposed on the electrostatic chuck 2 2 Upper upper circular plate member 200818311 Further, the electrostatic chuck 22 is a DC power source 23 electrically connected to the electrostatic electrode plate 21. When a positive high DC voltage is applied to the electrostatic electrode plate 21, the wafer is The surface on the side of the electrostatic chuck 22 in W (hereinafter referred to as "back surface") generates a negative electric power and generates a potential difference between the electrostatic electrode plate 21 and the back surface of the wafer W, by the Coulomb force caused by the potential difference or Johnsen-Rahbek force, the wafer W is sucked and held on the upper disc-shaped member of the electrostatic chuck 22. Further, in the electrostatic chuck 22, the upper disc-shaped member is not overlapped on the upper disc-shaped member. Part (hereinafter referred to as "focus ring mounting surface") is provided with an annular focus ring 24 (consumable component, annular member). The focus ring 24 is composed of a conductive member such as a crucible. The periphery of the wafer W held on the upper disc-shaped member in the electrostatic chuck 22 is sucked. Further, the focus ring 24 has an exposed surface exposed to the processing space S, and the plasma in the processing space S faces the wafer W. Surface convergence, improving the efficiency of engraving Further, the inside of the inductor 12 is provided with a ring-shaped cold coal chamber 25 extending in the circumferential direction. The cold coal chamber 25 is circulated from a cooling unit (not shown) by a cold coal pipe 26, for example, cooling water or Galden. The inductor 12 cooled by the low-temperature cold coal cools the wafer w and the focus ring 24 via the electrostatic chuck 22. Therefore, in the present embodiment, the inductor 12 functions as a direct cooling component, and the static electricity The jig 22 functions as an indirect cooling member, and the temperature of the wafer W and the focus ring 24 is mainly controlled by the temperature and flow rate of the cold coal to which the cold coal chamber 25 is circulated.
在靜電夾具22中之上部圓板狀之上之吸著保持晶圓W -10- 200818311 之部份（以下，稱爲「吸著面」），開口多數氣體供給孔2 7 。該些多數之傳熱氣體供給孔27是經傳熱氣體供給管28連 接於傳熱氣體供給部（無圖式），該傳熱氣體供給部是經傳 熱氣體供給孔27將當作傳熱氣體之氦（He)氣體供給至吸著 面及晶圓W之背面之間隙。被供給至吸著面及晶圓W之 背面之間隙的氦氣體是將晶圓W之熱有效果熱傳達至靜 電夾具22。 在腔室11之天井部以與感應器12對向之方式配置有氣 體導入噴淋頭29。在氣體導入噴淋頭2 9經上部整合部器30 連接有上部高頻電源31，因上述高頻電源31是將特定之高 頻電力施加至氣體導入噴淋頭29，故氣體導入噴淋頭29室 當作上部電極發揮功能。並且，上述整合器30之功能是與 上述下部整合器20之功能相同。 氣體導入噴淋頭29具有擁有多數氣體孔32之天井電極 板33，和可拆裝支撐該天井電極板之電極支撐體34。再者 ，該電極支撐體34之內部設置有緩衝室35，在該緩衝室35 連接有處理氣體導入管36。氣體導入噴淋頭29是將被供給 至緩衝室3 5之處理氣體從處理氣體導入管3 6 ’例如添加 〇2氣體及Ar等之惰性氣體至臭氧系氣體或是鹽系氣體之 混合體，供給至反應室1 7內。 再者，於腔室11之側壁設置有朝晶圓w之反應室1 7 內搬出搬入時所利用之搬出搬入口 37，搬出搬入口 37設置 有開關該搬出搬入口 37之閘閥38。 在該基板處理裝置1〇之反應室17內，對感應器12及氣 -11 - 200818311 體導入噴淋頭29施加高頻電力’藉由對感應器12及氣體導 入噴淋頭2 9之間的處理空間S施加高頻電力，在該處理空 間S使自氣體導入噴淋頭29所供給之處理氣體成爲高密度 電繫而產生離子或自由基’藉由該離子寺封晶圓W施予 蝕刻處理。 並且，上述基板處理裝置1〇之各構成零件之動作是基 板處理裝置10所具有之控制部（無圖式）之cpu因應對應於 蝕刻處理之程式而控制。 上述基板處理裝置10因有效果執行晶圓W及靜電夾 具22之間的熱傳達，故晶圓W及靜電夾具22之間被供給 傳熱氣體，但是於聚焦環24及靜電夾具22之間不供給傳熱 氣體。再者，聚焦環24及靜電夾具22因各爲固體，故假設 聚焦環24和靜電夾具22直接接觸之時，在聚焦環24及靜電 夾具22之界面產生微少間隙。在此，如上述般，因配置有 感應器12及聚焦環24之腔室11內，更具體而言反應室17內 被減壓至高真空狀態，故界面微小之間隙形成真空隔熱層 〇 被電漿曝曬之晶圓W及聚焦環24雖然在電漿處理中 溫度藉由來自電漿之入熱而上昇，但是晶圓W因經靜電 夾具22藉由感應器12被冷卻，故該溫度維持100°C左右。 另外，當形成真空隔熱層時，聚焦環24不經靜電夾具22藉 由感應器12被冷卻，該溫度上升至45(TC左右。即是，聚 焦環24及晶圓W之溫度差雖然變大，但是如上述般，晶 圓W中之鈾刻處理之面內均勻性惡化，並且聚焦環24之 -12- 200818311 消耗變快。再者，聚焦環24因間經過蓄積熱，故相同批次 中之製程性能惡化。 爲了解決該些問題，本發明者提及若將蝕刻處理中之 晶圓W之溫度抑制在2 2 5 °C以下即可’及在相同批次之晶 圓蝕刻處理中若將各晶圓處理時之聚焦環24之最高溫度差 (偏差程度）若爲±30 °C以內即可。 本實施形態是鑑於此，改善聚焦環24及靜電夾具22之 熱傳達性，抑制聚焦環24及靜電夾具22之界面中之微小間 隙之發生。具體而言，在聚焦環24及靜電夾具22之間配置 由凝膠狀物質所構成之熱傳導薄片39(熱傳導構件）°由凝 膠狀物質所構成之熱傳導薄片3 9因具有流動性’故掩埋上 述微小間隙，提升聚焦環24及靜電夾具22之密著度’依此 改善聚焦環24及導電夾具22之熱傳導性。在此，因聚焦環 24之熱經熱傳導薄片39及靜電夾具22傳達至感應器12，故 聚焦環24、熱傳達薄片39、靜電夾具22及感應器12構成傳 熱構造體。 因熱傳導薄片39之熱傳達性是熱傳達薄片39之熱傳導 率越大，再者，熱傳導薄片39越柔軟，及是硬度越小則越 佳，故本實施形態中，根據後述本發明者之實驗結果，將 熱傳導薄片39中以ASKER-C所表示之硬度對以W/m· K 所表示之熱傳導率的比設定成未滿20。並且，具體而言使 用薄片狀熱傳導之「AGEL」（註冊商標）（GELTEC有限公 司）當作熱傳導薄片39。 因熱傳導薄片39爲絕緣性構件，聚焦環24及靜電夾具 -13- 200818311 22爲導電性構件，故聚焦環24熱傳導薄片39及靜電夾具22 構成電容器。當該電容器之電荷變大時，因影響到晶圓W 中之蝕刻處理之面內均勻性，故必須縮小電容器之電溶。 在此，本實施形態之形態中之熱傳導薄片39之厚度以薄厚 度爲佳，具體而言熱傳導薄片39之厚度的最大値設定成 0 · 7 mm 〇 再者，因熱傳導薄片39具有黏著性，故在聚焦環24之 交換中，自聚膠環24或靜電夾具22剥開熱傳導薄片39之時 ，熱傳導薄片39破損該一部份密著於聚焦環24或靜電夾具 22而殘留。尤其，因密著於靜電夾具22之熱傳導薄片39之 一部份必須完全除去，故有損聚焦環24之交換作業性。在 此，自防止熱傳導薄片39破損之觀點來看，熱傳導薄片39 之厚度是以某値以上爲佳，具體而言熱傳導薄片39之厚度 之最小値設定爲〇.3mm。 若藉由本實施形態所涉及之熱傳導薄片39之熱傳導薄 片39，則在聚焦環24及感應器12之間，更具體而言’在聚 焦環24及靜電夾具22之間，配置由凝膠狀物質所構成之熱 傳導薄片39，將熱傳導薄片39中以ASKER-C所表示之硬 度對以W/m . K所表示之熱傳導率的比設定成未滿2 0 °熱 傳導薄片39因掩埋聚焦環24及靜電夾具22之界面中之微小 間隙，故使聚焦環24及感應器12之熱傳達性比以往上昇’ 可以有效率執行藉由感應器12所產生之聚焦環24的冷卻。 其結果，可以將蝕刻處理中之聚焦環2 4之溫度維持在2 2 5 t：以下，依此，可以防止晶圓…中之餽刻處理之面內均 -14- 200818311 勻性之惡化及聚焦環24之早期消耗。並且’可以防止隨著 時間經過在聚焦環24蓄積熱，防止相同批次之製程性能惡 化。 再者，靜電夾具22中之聚焦環載置面是被施予硏磨加 工，該面粗度Ra設定成1.6以下。但是，聚焦環載置面之 面粗度大，藉此即使多數產生聚焦環24及靜電夾具22之間 的微小間隙，熱傳導薄片39亦可以充分掩埋該些微小間隙 ，故在聚焦環載置面不一定需要硏磨加工，即使該面粗度 Ra爲6.3以上亦可。此時，藉由硏磨加工廢止可以抑制靜 電夾具22之製造成本。再者，藉由增大聚焦環載置面之面 粗度，可以增加熱傳導薄片39及靜電夾具22之實際接觸面 積，如此一來可以更提升聚焦環24及靜電夾具22之熱傳達 性。 並且，本實施行形態中，雖然熱傳導薄片3 9配置在靜 電夾具22及聚焦環24之間，但是配置熱傳導薄片39之場所 並不限定於此，若爲配置在腔室1 1內之被加熱之構件及使 該被加熱之構件的熱逃逸之間即可。 [實施例] 接著，針對本發明之實施例予以說明。 首先，本發明者準備以ASKER-C所表示之硬度爲1〇 〜100中之一者，以W/m · K所表示之熱傳導率爲〇·2〜17 中之一者的多數熱傳導薄片39。然後，每熱傳導薄片39’ 在基板處理裝置10中之靜電夾具22及聚焦環24之間配置該 -15- 200818311 熱傳導薄片39，在靜電夾具22之上部圓板狀構件之上載置 晶圓W並吸著保持，使腔室1 1內減壓至高真空狀態，將 氮氣體供給至晶圓W·之背面之間隙，並且以3分鐘X3循環 施加高頻電力至感應器12及氣體導入噴淋頭29，而測量聚 焦環2 4之溫度飽和度（以下，稱爲「飽和溫度」）。 之後，將本發明者所測量之聚焦環24之飽和溫度’和 熱傳導率及硬度整理於下述表1。 熱傳導率 W/m · K 硬度 ASKER-C換算値 飽和溫度 °C 0.2 10 303 0.8 20 453.1 1.1 15 181.7 1.1 20 162.6 1.2 18 144.7 1.6 29 173.2 2.0 10 130.9 2.0 55 388 2.1 10 104.5 2.3 26 122.4 2.5 27 91.7 3.0 12 81.1 3.0 40 102 3.0 75 106.5 5.0 100 453 6.0 65 89.1 6.0 95 157.3 15.0 20 62.2 17.0 20 55.8 -16- 200818311 然後，首先將熱傳導率及飽和溫度之關係表示於第2 圖之曲線圖。 當藉由第2圖之曲線圖時，若以全體而言熱傳導率變 大時，聚焦環24之飽和溫度則變低，但是有熱傳導率爲 〇·8時飽和溫度則爲45 3.1 °C時，熱傳導率爲2.0時飽和溫度 則爲3 88 °C時，或熱傳導率爲5.0時飽和溫度則爲453 °C之 時，無法取得用以使聚焦環24之溫度停在飽和溫度臨界値 (22 5 °C以下）熱傳導率之明確基準。 接著，本明者將硬度及飽和溫度之關係表示於第3圖 之曲線圖。 當藉由第3圖之曲線圖，硬度爲20時，飽和溫度則爲 45 3· 1 °C，無法取得用以使聚焦環24之溫度停留在飽和溫 度臨界値以下之硬度明確基準。 本發明者針對無法將聚焦環24之溫度停留在飽和溫度 臨界値以下之情形予以硏究，找出無論哪一種情形，相當 於熱傳導率大硬度也大之時，或是硬度小熱傳導率也小之 情形。在此，本發明者注意到硬度對熱傳導率之比，求出 硬度對熱傳導率之比及飽和溫度之關係，並且將硬度對熱 傳導率之比及飽和溫度之關係表示於第4圖之曲線圖。 -17- 200818311In the upper portion of the electrostatic chuck 22, a portion of the wafer W -10- 200818311 (hereinafter referred to as a "sucking surface") is sucked and held, and a plurality of gas supply holes 27 are opened. The plurality of heat transfer gas supply holes 27 are connected to a heat transfer gas supply unit (not shown) via a heat transfer gas supply pipe 28, and the heat transfer gas supply portion is treated as a heat transfer gas via the heat transfer gas supply hole 27. Helium (He) gas is supplied to the gap between the absorbing surface and the back surface of the wafer W. The helium gas supplied to the gap between the absorbing surface and the back surface of the wafer W conveys the heat of the wafer W to the electrostatic chuck 22. A gas introduction shower head 29 is disposed on the ceiling portion of the chamber 11 so as to face the inductor 12. The upper high-frequency power source 31 is connected to the gas introduction shower head 29 through the upper integration unit 30. Since the high-frequency power source 31 applies specific high-frequency power to the gas introduction shower head 29, the gas is introduced into the shower head. Room 29 functions as an upper electrode. Further, the function of the integrator 30 described above is the same as that of the lower integrator 20 described above. The gas introduction shower head 29 has a patio electrode plate 33 having a plurality of gas holes 32, and an electrode support body 34 detachably supporting the patio electrode plate. Further, a buffer chamber 35 is provided inside the electrode support 34, and a processing gas introduction pipe 36 is connected to the buffer chamber 35. The gas introduction shower head 29 is a mixture of the processing gas supplied to the buffer chamber 35 from the processing gas introduction pipe 3 6 ', for example, an inert gas such as 〇 2 gas or Ar to an ozone gas or a salt gas. It is supplied to the reaction chamber 17 . Further, on the side wall of the chamber 11, a carry-out port 37 for use in loading and unloading into the reaction chamber 17 of the wafer w is provided, and the carry-out port 37 is provided with a gate valve 38 for opening and closing the carry-in port 37. In the reaction chamber 17 of the substrate processing apparatus 1 , high-frequency power is applied to the inductor 12 and the gas inlet - 291811 body introduction shower head 29 by introducing the inductor 12 and the gas into the shower head 29 In the processing space S, high-frequency power is applied, and in the processing space S, the processing gas supplied from the gas introduction shower head 29 is made into a high-density electric system, and ions or radicals are generated by the ion-encapsulated wafer W. Etching treatment. Further, the operation of each component of the substrate processing apparatus 1 is controlled such that the cpu of the control unit (not shown) of the substrate processing apparatus 10 is controlled in accordance with the program of the etching process. Since the substrate processing apparatus 10 performs heat transfer between the wafer W and the electrostatic chuck 22, the heat transfer gas is supplied between the wafer W and the electrostatic chuck 22, but is not between the focus ring 24 and the electrostatic chuck 22. Supply heat transfer gas. Further, since the focus ring 24 and the electrostatic chuck 22 are each solid, it is assumed that a small gap is formed at the interface between the focus ring 24 and the electrostatic chuck 22 when the focus ring 24 and the electrostatic chuck 22 are in direct contact. Here, as described above, in the chamber 11 in which the inductor 12 and the focus ring 24 are disposed, more specifically, the inside of the reaction chamber 17 is decompressed to a high vacuum state, so that a gap between the interfaces forms a vacuum heat insulating layer. The plasma-exposed wafer W and the focus ring 24 rise in temperature during the plasma processing by the heat from the plasma, but the wafer W is cooled by the inductor 12 via the electrostatic chuck 22, so the temperature is maintained. About 100 °C. Further, when the vacuum heat insulating layer is formed, the focus ring 24 is cooled by the inductor 12 without passing through the electrostatic chuck 22, and the temperature rises to about 45 (TC). That is, the temperature difference between the focus ring 24 and the wafer W is changed. Large, but as described above, the in-plane uniformity of the uranium engraving treatment in the wafer W is deteriorated, and the consumption of the focus ring 24 -12-200818311 becomes faster. Further, since the focus ring 24 passes through the accumulated heat, the same batch In order to solve these problems, the inventors have mentioned that if the temperature of the wafer W in the etching process is suppressed to 2 2 5 ° C or less, and the same batch of wafer etching treatment is performed. In the present embodiment, the maximum temperature difference (degree of deviation) of the focus ring 24 during the processing of each wafer is within ±30 ° C. In view of this, the heat transfer property of the focus ring 24 and the electrostatic chuck 22 is improved. The occurrence of a small gap in the interface between the focus ring 24 and the electrostatic chuck 22 is suppressed. Specifically, a heat conduction sheet 39 (heat conduction member) composed of a gel-like substance is disposed between the focus ring 24 and the electrostatic chuck 22 Thermal conductive sheet 3 composed of a gelatinous substance 9 Because of the fluidity, the small gap is buried, and the adhesion between the focus ring 24 and the electrostatic chuck 22 is improved, thereby improving the thermal conductivity of the focus ring 24 and the conductive jig 22. Here, the heat of the focus ring 24 is thermally conducted. Since the sheet 39 and the electrostatic chuck 22 are transmitted to the inductor 12, the focus ring 24, the heat transfer sheet 39, the electrostatic chuck 22, and the inductor 12 constitute a heat transfer structure. The heat transfer property of the heat conduction sheet 39 is heat conduction of the heat transfer sheet 39. Further, the higher the rate, the softer the heat-conductive sheet 39 is, and the smaller the hardness is. Therefore, in the present embodiment, the hardness of the heat-conductive sheet 39 expressed by ASKER-C is obtained based on the experimental results of the inventors described later. The ratio of the thermal conductivity expressed by W/m·K is set to less than 20. Specifically, "AGEL" (registered trademark) (GELTEC Co., Ltd.) which uses flaky heat conduction is used as the heat conduction sheet 39. The sheet 39 is an insulating member, and the focus ring 24 and the electrostatic chuck 13-200818311 22 are conductive members, so the focus ring 24 heat conduction sheet 39 and the electrostatic chuck 22 constitute a capacitor. When the capacitor is charged When the size is increased, the in-plane uniformity of the etching process in the wafer W is affected, so that it is necessary to reduce the electrolysis of the capacitor. Here, the thickness of the heat conduction sheet 39 in the embodiment of the present embodiment is preferably thin. The maximum thickness of the thickness of the heat conduction sheet 39 is set to 0 · 7 mm. Further, since the heat conduction sheet 39 has adhesiveness, in the exchange of the focus ring 24, the heat conduction sheet is peeled off from the adhesive ring 24 or the electrostatic chuck 22. At the time of 39, the heat conduction sheet 39 is broken and remains in contact with the focus ring 24 or the electrostatic chuck 22. In particular, since a portion of the heat conduction sheet 39 adhered to the electrostatic chuck 22 must be completely removed, the focus is degraded. The exchangeability of the ring 24 is operational. Here, from the viewpoint of preventing breakage of the heat conduction sheet 39, the thickness of the heat conduction sheet 39 is preferably a certain thickness or more, and specifically, the minimum thickness of the thickness of the heat conduction sheet 39 is set to 〇3 mm. According to the heat conduction sheet 39 of the heat conduction sheet 39 according to the present embodiment, a gel-like substance is disposed between the focus ring 24 and the inductor 12, more specifically, between the focus ring 24 and the electrostatic chuck 22. The thermally conductive sheet 39 is formed such that the ratio of the hardness expressed by ASKER-C in the thermally conductive sheet 39 to the thermal conductivity represented by W/m·K is set to less than 20°. The thermally conductive sheet 39 is buried by the focus ring 24 and The small gap in the interface of the electrostatic chuck 22 causes the heat transfer of the focus ring 24 and the inductor 12 to be higher than in the past. The cooling of the focus ring 24 generated by the inductor 12 can be efficiently performed. As a result, the temperature of the focus ring 24 in the etching process can be maintained at 2 2 5 t: or less, thereby preventing the deterioration of the uniformity of the in-plane 14-200818311 in the wafer... The early consumption of the focus ring 24 is. And it can prevent heat from accumulating in the focus ring 24 as time passes, preventing the process performance of the same batch from deteriorating. Further, the focus ring mounting surface in the electrostatic chuck 22 is subjected to honing processing, and the surface roughness Ra is set to 1.6 or less. However, the surface of the focus ring mounting surface has a large thickness, so that even if a large gap between the focus ring 24 and the electrostatic chuck 22 is generated, the heat conduction sheet 39 can sufficiently bury the minute gaps, so that the focus ring mounting surface It is not necessary to perform honing processing, even if the surface roughness Ra is 6.3 or more. At this time, the manufacturing cost of the static chuck 22 can be suppressed by the honing processing. Further, by increasing the surface roughness of the focus ring mounting surface, the actual contact area of the heat conduction sheet 39 and the electrostatic chuck 22 can be increased, so that the heat transfer property of the focus ring 24 and the electrostatic chuck 22 can be further improved. Further, in the embodiment, the heat conduction sheet 39 is disposed between the electrostatic chuck 22 and the focus ring 24, but the place where the heat conduction sheet 39 is disposed is not limited thereto, and is heated in the chamber 1 1 The member and the heat escape of the member to be heated may be between. [Embodiment] Next, an embodiment of the present invention will be described. First, the inventors of the present invention prepare a plurality of heat conduction sheets 39 having a heat conductivity of one of 〇·2 to 17 represented by W/m·K, which is one of hardnesses 1 to 100 in terms of ASKER-C. . Then, the heat conducting sheet 39' is disposed between the electrostatic chuck 22 and the focus ring 24 in the substrate processing apparatus 10, and the heat conducting sheet 39 is placed on the upper plate member of the electrostatic chuck 22, and the wafer W is placed thereon. Suction holding, decompressing the chamber 11 to a high vacuum state, supplying a nitrogen gas to the gap of the back surface of the wafer W·, and applying high frequency power to the inductor 12 and the gas introduction shower head in a 3 minute X 3 cycle. 29, and measure the temperature saturation of the focus ring 24 (hereinafter, referred to as "saturation temperature"). Thereafter, the saturation temperature ' and the thermal conductivity and hardness of the focus ring 24 measured by the inventors are summarized in Table 1 below. Thermal conductivity W/m · K Hardness ASKER-C conversion 値 saturation temperature °C 0.2 10 303 0.8 20 453.1 1.1 15 181.7 1.1 20 162.6 1.2 18 144.7 1.6 29 173.2 2.0 10 130.9 2.0 55 388 2.1 10 104.5 2.3 26 122.4 2.5 27 91.7 3.0 12 81.1 3.0 40 102 3.0 75 106.5 5.0 100 453 6.0 65 89.1 6.0 95 157.3 15.0 20 62.2 17.0 20 55.8 -16- 200818311 Then, the relationship between the thermal conductivity and the saturation temperature is first shown in the graph of Fig. 2. When the graph of Fig. 2 is used, the saturation temperature of the focus ring 24 becomes lower when the thermal conductivity is increased as a whole, but the saturation temperature is 45 3.1 °C when the thermal conductivity is 〇·8. When the thermal conductivity is 2.0, the saturation temperature is 3 88 °C, or when the thermal conductivity is 5.0, the saturation temperature is 453 °C, and the temperature of the focus ring 24 can not be stopped at the saturation temperature threshold (22). A clear reference for thermal conductivity below 5 °C. Next, the present inventors show the relationship between hardness and saturation temperature in the graph of Fig. 3. When the hardness is 20 by the graph of Fig. 3, the saturation temperature is 45 3·1 ° C, and the hardness reference for keeping the temperature of the focus ring 24 below the critical temperature of the saturation temperature cannot be obtained. The inventors of the present invention have studied the case where the temperature of the focus ring 24 cannot be kept below the critical temperature of the saturation temperature, and find out that in either case, the thermal conductivity is large and the hardness is large, or the hardness is small and the thermal conductivity is small. The situation. Here, the inventors of the present invention have noticed the ratio of hardness to thermal conductivity, determined the relationship between the ratio of hardness to thermal conductivity and the saturation temperature, and expressed the relationship between the ratio of hardness to thermal conductivity and the saturation temperature in the graph of FIG. . -17- 200818311
[表2] 硬度/熱傳導率 飽和溫度。C 50.0 303 25.0 453.1 13.6 181.7 18.2 162.6 15.0 144.7 18.1 173.2 5.0 130.9 27.5 388 4.8 104.5 11.3 122.4 10.8 91.7 4.0 81.1 13.3 102 25.0 106.5 20.0 453 10.8 89· 1 15.8 157.3 1.3 62.2 1.2 55.8 當藉由第4圖時，可知當硬度對熱傳導率之硬度比未 滿2〇時，可以使聚焦環24之溫度停留在飽和溫度臨界値以 下。 再者，當測量使用硬度對熱傳導率之比未滿20之熱傳 導薄片39而以3分鐘x3循環將高頻電力施加至感應器12及 氣體導入噴淋頭29之時的各循環中之聚焦環24的飽和溫度 時，則確認出各飽和溫度之差在±30 °C以內。 -18- 200818311 即是，可知若熱傳導薄片39中之以ASKER-C所表示 之硬度對以W/m · K所表示之熱傳導率的比未滿2〇時’則 可以使聚焦環2 4之溫度停留在飽和溫度臨界値以下，並且 可以使各高頻電力施加循環中之聚焦環24之飽和溫度之差 停留在±30 °C以內。 【圖式簡單說明】 第1圖是表示具備本發明之實施形態所涉及之傳熱構 造體之基板處理裝置之槪略構成的剖面圖。 第2圖是表示第1圖之熱傳導薄片之熱傳導率及聚焦環 之飽和溫度之關係曲線圖。 第3圖是表示第1圖中之熱傳導薄片之硬度及聚焦環之 飽和溫度之關係曲線圖。 第4圖是表示第1圖中之熱傳導薄片之硬度對熱傳導率 之比及聚焦環之飽和溫度之關係曲線圖。 第5圖是表示附著之聚合物之膜厚和附著對象物之溫 度的關係曲線圖。 【主要元件符號說明】 W :晶圓 S :處理空間 1 〇 :基板處理裝置 1 1 :腔室 1 2 :感應器 -19- 200818311[Table 2] Hardness / Thermal Conductivity Saturated temperature. C 50.0 303 25.0 453.1 13.6 181.7 18.2 162.6 15.0 144.7 18.1 173.2 5.0 130.9 27.5 388 4.8 104.5 11.3 122.4 10.8 91.7 4.0 81.1 13.3 102 25.0 106.5 20.0 453 10.8 89· 1 15.8 157.3 1.3 62.2 1.2 55.8 When using Figure 4, it is known When the hardness to hardness ratio of the thermal conductivity is less than 2 ,, the temperature of the focus ring 24 can be kept below the saturation temperature threshold 。. Further, when measuring the heat conduction sheet 39 using a ratio of hardness to thermal conductivity of less than 20 and applying high frequency power to the inductor 12 and the gas introduction shower head 29 in a 3 minute x 3 cycle, the focus ring in each cycle At the saturation temperature of 24, it was confirmed that the difference between the respective saturation temperatures was within ±30 °C. -18-200818311 That is, it can be seen that if the ratio of the hardness expressed by ASKER-C to the thermal conductivity represented by W/m · K in the heat conduction sheet 39 is less than 2 ', then the focus ring 24 can be made. The temperature stays below the saturation temperature threshold ,, and the difference between the saturation temperatures of the focus rings 24 in each high-frequency power application cycle can be kept within ±30 °C. [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus including a heat transfer structure according to an embodiment of the present invention. Fig. 2 is a graph showing the relationship between the thermal conductivity of the thermally conductive sheet of Fig. 1 and the saturation temperature of the focus ring. Fig. 3 is a graph showing the relationship between the hardness of the thermally conductive sheet in Fig. 1 and the saturation temperature of the focus ring. Fig. 4 is a graph showing the relationship between the hardness to thermal conductivity ratio of the thermally conductive sheet in Fig. 1 and the saturation temperature of the focus ring. Fig. 5 is a graph showing the relationship between the film thickness of the adhered polymer and the temperature of the object to be attached. [Description of main component symbols] W : Wafer S : Processing space 1 〇 : Substrate processing device 1 1 : Chamber 1 2 : Sensor -19- 200818311
22 :靜電夾具 24 :聚焦環 2 5 :冷煤室 39 :熱傳導薄片 -2022 : Static clamp 24 : Focus ring 2 5 : Cold coal chamber 39 : Thermal conduction sheet -20