JP2005298773A - Semiconductive heat conductive material - Google Patents
Semiconductive heat conductive material Download PDFInfo
- Publication number
- JP2005298773A JP2005298773A JP2004121087A JP2004121087A JP2005298773A JP 2005298773 A JP2005298773 A JP 2005298773A JP 2004121087 A JP2004121087 A JP 2004121087A JP 2004121087 A JP2004121087 A JP 2004121087A JP 2005298773 A JP2005298773 A JP 2005298773A
- Authority
- JP
- Japan
- Prior art keywords
- conductive material
- semiconductive
- heat conductive
- graphite
- volume
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 24
- 239000010439 graphite Substances 0.000 claims abstract description 24
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000003068 static effect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 2
- 239000000499 gel Substances 0.000 description 17
- 229920001971 elastomer Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000004898 kneading Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229920002379 silicone rubber Polymers 0.000 description 5
- 239000004945 silicone rubber Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 3
- 239000011231 conductive filler Substances 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000013329 compounding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000002783 friction material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006124 polyolefin elastomer Polymers 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
本発明は、半導電性熱伝導材に関し、特に、柔軟性及び密着性に優れ、また熱伝導性と適度な導電性を有する半導電性熱伝導材に関する。 The present invention relates to a semiconductive heat conductive material, and more particularly, to a semiconductive heat conductive material that is excellent in flexibility and adhesion, and has heat conductivity and moderate conductivity.
従来より、シリコーンを含め、ポリウレタン系エラストマー、ポリオレフィン系エラストマー、天然ゴム等に代表されるような材料に導電性フィラー等を充填し、混練・成形した導電性エラストマーは、ゴム接点や静電、除電、電磁波シールド、各種導電ロール材料等に広く使用され、例えば、高温で処理された黒鉛状カーボンブラックを含有するシリコーンゴム組成物からなる半導電性組成物（例えば、特許文献１参照。）等が開発され、さらに、シリコーンゴム、ポリオレフィン系エラストマー等に熱伝導フィラーを充填し、混練・成形した熱伝導性エラストマーのシート等は、電気・電子装置の内部において、例えば、発熱源となる電子部品と、放熱板や筐体パネル等といったヒートシンクとなる部品との間に介在させるように配置して使用され、電子部品等が発生する熱をヒートシンク側へ良好に逃がすことができるものとして用いられてきているが、電子部品の表面に発生した静電気により誤動作の発生が問題となり、静電気除去効果も求められるようになっている。そのような問題を解決するものとして、例えば、母材にフェライトと気相成長炭素繊維系熱伝導フィラーとを充填した熱伝導シート（例えば、特許文献２参照。）が開発されている。 Conventionally, conductive elastomers, such as silicone, including polyurethane elastomers, polyolefin elastomers, natural rubber, etc., filled with conductive fillers, kneaded and molded, are used for rubber contacts, electrostatic and static elimination. Widely used in electromagnetic shielding, various conductive roll materials, etc., for example, a semiconductive composition comprising a silicone rubber composition containing graphite-like carbon black treated at high temperature (see, for example, Patent Document 1). In addition, heat-conductive elastomer sheets filled with heat-conductive filler in silicone rubber, polyolefin-based elastomer, etc., and kneaded / molded are used as electronic components that become heat sources, for example, inside electric / electronic devices. Placed between the heat sink and the heat sink parts such as the housing panel. It has been used as a heat sink that can efficiently release heat generated by electronic components to the heat sink side. It is supposed to be. As a solution to such a problem, for example, a heat conductive sheet (see, for example, Patent Document 2) in which a base material is filled with ferrite and a vapor growth carbon fiber-based heat conductive filler has been developed.
一方、近年の電子機器の小型化、高性能化の一層の進展により、電子部品である実装部品の小型化や、それらを基板に実装する実装装置、実装方法の技術進歩は著しく、基板に実装部品をハンダ付けする技術における、リフローハンダ付け方法においては、無鉛ハンダの使用が行われてきている。この無鉛ハンダは、従来のハンダよりも溶融点が高温であり、従来の規格のままの実装部品をその温度にさらすと実装部品にダメージを与える危険性が生じてきているため、吸熱材が用いられる（例えば、特許文献３参照。）が、この場合も静電気による実装部品の破損問題がある。このような問題を解決するものとして、シリコーンゴムを主成分とし、針状亜鉛粉末や導電性酸化亜鉛粉末を含有させた導電性シリコーンゴム組成物（例えば、特許文献４〜５参照。）が開発されている。
しかしながら、いずれの技術も満足のいく性能を有さず、特に、吸熱材として実装部品への貼着、剥離を手作業で行い、繰り返して使用できる半導電性の熱伝導材は得られていなかった。
However, none of these technologies has satisfactory performance, and in particular, a semiconductive heat conductive material that can be used repeatedly as a heat absorbing material has been obtained by manually attaching and peeling to mounting parts. It was.
本発明の目的は、上記問題点等に鑑み、（１）熱をより早く吸熱するための適度な熱伝導率、（２）静電気が蓄積しないための適度な導電性、（３）凹凸のある実装部品に貼着できる適度な柔軟性、（４）実装部品に貼着し、かつ容易に剥離できる適度な密着性、を有する半導電性熱伝導材を提供することにある。 In view of the above-mentioned problems and the like, the object of the present invention is (1) moderate thermal conductivity for absorbing heat faster, (2) moderate conductivity for preventing static electricity accumulation, and (3) irregularities. An object of the present invention is to provide a semiconductive heat conductive material having appropriate flexibility that can be attached to a mounting component, and (4) appropriate adhesion that can be attached to a mounting component and easily peeled off.
本発明者らは、かかる課題を解決するために鋭意研究の結果、シリコーンゲルに黒鉛、アルミナを特定量配合することにより、適度な熱伝導率、適度な導電性、適度な柔軟性、及び適度な密着性を有する半導電性熱伝導材が得られることを見出し本発明を完成させた。 As a result of intensive studies to solve such problems, the present inventors have blended a specific amount of graphite and alumina into a silicone gel, so that moderate thermal conductivity, moderate conductivity, moderate flexibility, and moderate The present invention was completed by finding that a semiconductive heat conductive material having excellent adhesion can be obtained.
すなわち、本発明の第１の発明によれば、（ａ）シリコーンゲル３５〜６５容量％、（ｂ）黒鉛７〜２０容量％、及び（ｃ）アルミナ１５〜５８容量％を含有する半導電性熱伝導材であって、（ｂ）黒鉛の（ａ）シリコーンゲルに対する容量比が０．２〜０．３であることを特徴とする半導電性熱伝導材が提供される。 That is, according to the first aspect of the present invention, the semiconducting material contains (a) 35-65% by volume of silicone gel, (b) 7-20% by volume of graphite, and (c) 15-58% by volume of alumina. There is provided a semiconductive heat conductive material, wherein the capacity ratio of (b) graphite to (a) silicone gel is 0.2 to 0.3.
また、本発明の第２の発明によれば、第１の発明において、体積抵抗が１０６〜１０８Ωｃｍ、熱伝導率が１．５〜２．３Ｗ／ｍ・Ｋであることを特徴とする半導電性熱伝導材が提供される。 According to the second invention of the present invention, in the first invention, the volume resistance is 10 6 to 10 8 Ωcm, and the thermal conductivity is 1.5 to 2.3 W / m · K. A semiconductive thermal conductive material is provided.
本発明の半導電性熱伝導材は、適度な熱伝導率、適度な導電性、適度な柔軟性、及び適度な密着性を有し、半導電領域で安定した体積抵抗を持ち、あらゆる半導電性が求められる用途について広範囲に使用できる。 The semiconductive heat conductive material of the present invention has moderate thermal conductivity, moderate conductivity, moderate flexibility, and moderate adhesion, and has a stable volume resistance in the semiconductive region, and any semiconductive It can be used in a wide range of applications where properties are required.
本発明の半導電性熱伝導材は、（ａ）シリコーンゲル、（ｂ）黒鉛、及び（ｃ）アルミナを含有する複合材である。以下にその構成成分、製造、性能等について詳細に説明する。 The semiconductive heat conductive material of the present invention is a composite material containing (a) silicone gel, (b) graphite, and (c) alumina. The components, production, performance, etc. will be described in detail below.
１．半導電性熱伝導材の構成成分
（ａ）シリコーンゲル
本発明の半導電性熱伝導材に用いる（ａ）シリコーンゲルは、黒鉛、アルミナのバインダーとしての機能を果たし、かつ成形品に密着性を付与し、さらに、半導電性熱伝導材の温度依存性を少なくして−２０〜１５０℃の広い温度範囲での使用を可能にする機能を有する。（ａ）シリコーンゲルとしては、従来から知られ、市販されている種々のシリコーン材料として一般的に使用されているものを適宜選択して用いることができる。よって、加熱硬化型あるいは常温硬化型のもの、硬化機構が縮合型あるいは付加型のものなど、いずれも用いることができる。また、珪素原子に結合する基も特に限定されるものではなく、例えば、メチル基、エチル基、プロピル基等のアルキル基、シクロペンチル基、シクロヘキシル基等のシクロアルキル基、ビニル基、アリル基等のアルケニル基、フェニル基、トリル基等のアリール基のほか、これらの基の水素原子が部分的に他の原子又は結合基で置換されたものを挙げることができる。
1. Component of Semiconductive Thermal Conductive Material (a) Silicone Gel (a) Silicone gel used for the semiconductive thermal conductive material of the present invention serves as a binder for graphite and alumina, and provides adhesion to the molded product. Furthermore, it has a function of reducing the temperature dependency of the semiconductive heat conductive material and enabling use in a wide temperature range of -20 to 150 ° C. (A) As a silicone gel, what is conventionally used and generally used as various commercially available silicone materials can be selected suitably, and can be used. Therefore, any of a heat curing type or a room temperature curing type, a condensation type or an addition type, etc. can be used. In addition, the group bonded to the silicon atom is not particularly limited, and examples thereof include alkyl groups such as methyl group, ethyl group, and propyl group, cycloalkyl groups such as cyclopentyl group and cyclohexyl group, vinyl groups, and allyl groups. In addition to aryl groups such as alkenyl groups, phenyl groups, and tolyl groups, those in which the hydrogen atoms of these groups are partially substituted with other atoms or linking groups can be mentioned.
本発明で用いるシリコーンゲルは、硬化後におけるＪＩＳ Ｋ２２０７−１９８０（５０ｇ荷重）の針入度が５〜２００であることが好ましく、この程度の柔らかさのシリコーンゲルを用いると、成形体として用いるときの密着性で有利となる。 The silicone gel used in the present invention preferably has a penetration of JIS K2207-1980 (50 g load) after curing in a range of 5 to 200. When a silicone gel having such a softness is used, It is advantageous in adhesion.
シリコーンゲルの配合量は、半導電性熱伝導材全体の３５〜６５容量％であり、好ましくは４０〜５０容量％である。シリコーンゲルの配合量が３５容量％未満では、シート状に成形することが困難となり、６５容量％を超えると熱伝導性、導電性が得られない。 The compounding quantity of a silicone gel is 35-65 volume% of the whole semiconductive heat conductive material, Preferably it is 40-50 volume%. If the blending amount of the silicone gel is less than 35% by volume, it becomes difficult to form a sheet, and if it exceeds 65% by volume, thermal conductivity and conductivity cannot be obtained.
（ｂ）黒鉛
本発明の半導電性熱伝導材に用いる（ｂ）黒鉛は、主に導電材としての機能を果たし、さらに、低摩擦材としての機能を果たし、アルミナ等のフィラーの高充填時のフィラー間の摩擦抵抗の低減に寄与し、高充填化に効果的な役割を果たす。
本発明で用いることのできる黒鉛としては、一般公知の黒鉛で、シリコーンゲルの硬化阻害を起こさなければ、特に制限無く使用できる。例えば、鱗片状黒鉛、鱗状黒鉛、土状黒鉛などの天然黒鉛、コークス、タール、ピッチなどを高温で黒鉛化処理した人造黒鉛が挙げられる。
黒鉛の平均粒径は、１〜３０μｍが好ましく、より好ましくは１５〜２５μｍである。平均粒径が１μｍ未満では取り扱いが困難となり、３０μｍを超えると半導電性熱伝導材としての平滑性が劣り好ましくない。
(B) Graphite (b) Graphite used for the semiconductive heat conductive material of the present invention mainly functions as a conductive material, further functions as a low friction material, and is highly filled with a filler such as alumina. This contributes to reducing the frictional resistance between the fillers and plays an effective role in increasing the filling.
As the graphite that can be used in the present invention, generally known graphite can be used without particular limitation as long as it does not inhibit the hardening of the silicone gel. Examples thereof include artificial graphite obtained by graphitizing natural graphite such as flaky graphite, scaly graphite, and earthy graphite, coke, tar, and pitch at a high temperature.
The average particle diameter of graphite is preferably 1 to 30 μm, more preferably 15 to 25 μm. When the average particle size is less than 1 μm, handling becomes difficult, and when it exceeds 30 μm, the smoothness as a semiconductive heat conductive material is inferior, which is not preferable.
黒鉛の配合量は、半導電性熱伝導材全体の７〜２０容量％であり、好ましくは９〜１２容量％である。黒鉛の量が７容量％未満では導電性が得られず、２０容量％を超えると半導電性熱伝導材としての導電性が良すぎコストアップとなる。
また、黒鉛の量は、（ａ）シリコーゲルに対する容量比として０．２〜０．３である必要がある。黒鉛の量をこの範囲にすることで、半導電性熱伝導材の帯電防止に必要な体積抵抗を得るに当たり、柔軟性を任意に設定することができる。
The compounding quantity of graphite is 7-20 volume% of the whole semiconductive heat conductive material, Preferably it is 9-12 volume%. If the amount of graphite is less than 7% by volume, conductivity cannot be obtained, and if it exceeds 20% by volume, the conductivity as the semiconductive heat conductive material is too good, resulting in a cost increase.
Moreover, the quantity of graphite needs to be 0.2-0.3 as a volume ratio with respect to (a) silica gel. By setting the amount of graphite within this range, flexibility can be arbitrarily set in obtaining the volume resistance necessary for preventing the semiconductive heat conductive material from being charged.
（ｃ）アルミナ
本発明の半導電性熱伝導材に用いる（ｃ）アルミナは、主に熱伝導材としての機能を果たし、一般公知のアルミナであれば、特に制限無く使用できる。
使用するアルミナの形状は、特に制限はないが、球形のものが好ましく、擬似的な球形であっても良い。また、アルミナの粒径は、高充填ができる二山分布が好ましく、特に１〜５μｍ近辺の粒径を有するアルミナと１５〜２５μｍ近辺の粒径を有する２極化設計されたアルミナが好ましい。
アルミナの配合量は、半導電性熱伝導材全体の１５〜５８容量％であり、好ましくは３８〜５０容量％である。アルミナの量が１５容量％未満では熱伝導性が得られず、５８容量％を超えるとシート状に成形することが困難となる。
(C) Alumina (c) Alumina used in the semiconductive heat conductive material of the present invention mainly functions as a heat conductive material, and can be used without particular limitation as long as it is a generally known alumina.
The shape of the alumina to be used is not particularly limited, but a spherical one is preferable, and a pseudo spherical shape may be used. Further, the alumina particle size is preferably a two-peak distribution capable of high filling, and in particular, alumina having a particle size in the vicinity of 1 to 5 μm and alumina designed to be bipolar having a particle size in the vicinity of 15 to 25 μm are preferable.
The blending amount of alumina is 15 to 58% by volume, preferably 38 to 50% by volume, based on the whole semiconductive heat conductive material. If the amount of alumina is less than 15% by volume, thermal conductivity cannot be obtained, and if it exceeds 58% by volume, it becomes difficult to form a sheet.
（ｄ）その他の成分
本発明の半導電性熱伝導材には、本発明の目的を損なわない範囲の種類及び量の他の成分を配合することができる。このような他の成分としては、触媒、硬化遅延剤、硬化促進剤、着色剤等を挙げることができる。
(D) Other components The semiconductive heat conductive material of the present invention can be blended with other components in the range and type that do not impair the object of the present invention. Examples of such other components include a catalyst, a curing retarder, a curing accelerator, and a colorant.
２．半導電性熱伝導材
本発明の半導電性熱伝導材は、前述のように、シリコーンゲルに黒鉛、アルミナを高充填した混合物から得られる。通常のシリコーンゴムに黒鉛、アルミナ等の無機フィラーを高充填すると粘度が高くなりロ−ル混練、バンバリ−混練、ニ−ダ−混練が困難である。仮に混練を行なってもコンパウンドの粘度が高く、圧縮成形では均一な厚さに成形することが容易に出来ないが、シリコーンゲルを用いると高充填を行ってもケミカルミキサーで混練が容易になり、通常のシート成形機でも均一な厚さにシート成形ができるようになる。
2. Semiconductive Thermal Conductive Material As described above, the semiconductive thermal conductive material of the present invention is obtained from a mixture in which silicone gel is highly filled with graphite and alumina. When a normal silicone rubber is highly filled with an inorganic filler such as graphite or alumina, the viscosity increases and roll kneading, bumper kneading, and kneader kneading are difficult. Even if kneading is performed, the viscosity of the compound is high, and compression molding cannot easily form a uniform thickness, but if a silicone gel is used, kneading with a chemical mixer becomes easy even if high filling is performed, Even a normal sheet forming machine can form a sheet with a uniform thickness.
本発明の半導電性熱伝導材は、上記成分の組成からなるので、比重としては、１．７〜２．６、熱伝導率として、１．５〜２．３Ｗ／ｍ・Ｋ、体積抵抗として、１０６〜１０８Ωｍ、硬度（針入度）として、３５〜７０の特性を有し、半導電性、熱伝導性に優れ、温度依存性が少なく、かつ柔らかく、密着強度に優れ、高抵抗高絶縁特性を有す。
ここで、熱伝導率はＪＩＳ Ｒ２６１８に準拠して求める値であり、体積抵抗はＪＩＳ Ｋ６２４９に準拠して求める値であり、針入度はＪＩＳ Ｋ ２２０７−１９８０に準拠して求める値である。
Since the semiconductive heat conductive material of the present invention is composed of the above components, the specific gravity is 1.7 to 2.6, the thermal conductivity is 1.5 to 2.3 W / m · K, and the volume resistance. As 10 6 to 10 8 Ωm, hardness (penetration) as a property of 35 to 70, excellent in semiconductivity and thermal conductivity, less temperature dependent, soft and excellent in adhesion strength, High resistance and high insulation properties.
Here, the thermal conductivity is a value obtained in accordance with JIS R2618, the volume resistance is a value obtained in accordance with JIS K6249, and the penetration is a value obtained in accordance with JIS K 2207-1980.
したがって、本発明の半導電性熱伝導材は、半導電領域で安定した体積抵抗を持ち、静電、除電、電磁波シールド、ゴムパッキンやオイルシール、ゴム接点や事務機用ロール等のあらゆる半導電性が求められる種々の用途について広範囲に使用できる。特に、融点の高い無鉛ハンダを用いるリフローハンダ付け方法により部品を実装する際、高温下でのＩＣ等の実装部品の破損を防止するための吸熱材として好適に用いることができる。 Therefore, the semiconductive heat conductive material of the present invention has a stable volume resistance in the semiconductive region, and is capable of any semiconductive such as electrostatic, static eliminator, electromagnetic wave shield, rubber packing, oil seal, rubber contact, and office machine roll. It can be used in a wide range of various applications that require properties. In particular, when a component is mounted by a reflow soldering method using lead-free solder having a high melting point, it can be suitably used as a heat absorbing material for preventing damage to a mounted component such as an IC under high temperature.
本発明を実施例に基づいて詳細に説明するが、本発明はこれらの実施例に限定されるものではない。なお、実施例の物性値の測定法を下記に示す。
（１）体積抵抗：三菱化学株式会社製Ｈｉｒｅｓｔａ（ＭＣＰ−ＨＴ４５０）を用い、ＪＩＳ Ｋ ６２４９に準拠して測定した。
（２）熱伝導率：ＱＴＭ−５００（京都電子工業株式会社製）を用いＪＩＳ Ｒ ２６１８に準拠した熱線法で求めた。
（３）針入度：ＪＩＳ Ｋ ２２０７−１９８０に準拠して求めた。
The present invention will be described in detail based on examples, but the present invention is not limited to these examples. In addition, the measuring method of the physical-property value of an Example is shown below.
(1) Volume resistance: It measured based on JISK6249 using Mitsubishi Chemical Corporation Hiresta (MCP-HT450).
(2) Thermal conductivity: It calculated | required by the hot wire method based on JISR2618 using QTM-500 (made by Kyoto Electronics Industry Co., Ltd.).
(3) Penetration: Determined according to JIS K 2207-1980.
（実施例１）
針入度が１４５のシリコーンゲル（ＳＩＧ４０００（商品名）：信越化学工業（株）製）４０容量％、純度９９．７％、平均粒径２０μｍの黒鉛（ＳＧＯ２０（商品名）：（株）エスイーシー製）９．５容量％、及び平均粒径１５μｍ、２μｍと２０μｍにピークを持つ擬似球形アルミナ（ＡＳ−４０（商品名）：昭和電工（株）製）５０．５容量％を混合し、真空脱泡の後、空気を巻き込まないようガラス板間に流し込み、７０℃で６０分間加熱プレス成形して、厚さが１ｍｍの表面が平滑な成形体を得た。この成形体の評価結果を表１に示す。
(Example 1)
Silicone gel having a penetration of 145 (SIG4000 (trade name): manufactured by Shin-Etsu Chemical Co., Ltd.) 40% by volume, purity 99.7%, average particle size 20 μm graphite (SGO20 (trade name): ESC Corporation) 9.5 volume%, and pseudospherical alumina (AS-40 (trade name) manufactured by Showa Denko KK) having an average particle diameter of 15 μm, peaks at 2 μm and 20 μm, and 50.5 volume% are mixed and vacuumed After defoaming, it was poured between glass plates so as not to entrain air, and was subjected to hot press molding at 70 ° C. for 60 minutes to obtain a molded body having a smooth surface with a thickness of 1 mm. Table 1 shows the evaluation results of this molded body.
（実施例２〜３、比較例１〜３）
シリコーンゲル、黒鉛、アルミナの量を表１に示すように変更する以外は実施例１と同様にして成形体を得た。成形体の評価結果を表１に示す。
(Examples 2-3, Comparative Examples 1-3)
A molded body was obtained in the same manner as in Example 1 except that the amounts of silicone gel, graphite and alumina were changed as shown in Table 1. The evaluation results of the molded body are shown in Table 1.
表１から明らかなように、本発明の半導電性熱伝導材は、適度な熱伝導率、適度な導電性、適度な柔軟性、及び適度な密着性を有していた（実施例１〜３）。一方、（ｂ）／（ａ）が小さすぎる組成では、体積抵抗が大き過ぎ（比較例１）、（ｂ）／（ａ）が大きすぎる組成では、体積抵抗が小さ過ぎ（比較例２）、（ａ）シリコーンゲルの配合量が著しく多く、（ｂ）／（ａ）が小さ過ぎる組成では、熱伝導率の低下と体積抵抗が大き過ぎるようになり（比較例３）、いずれも半導電性熱導電材となり得なかった。 As is clear from Table 1, the semiconductive heat conductive material of the present invention had moderate thermal conductivity, moderate conductivity, moderate flexibility, and moderate adhesion (Examples 1 to 3). On the other hand, in the composition where (b) / (a) is too small, the volume resistance is too large (Comparative Example 1), and in the composition where (b) / (a) is too large, the volume resistance is too small (Comparative Example 2), (A) The composition of the silicone gel is remarkably large, and (b) / (a) is too small, the thermal conductivity decreases and the volume resistance becomes too large (Comparative Example 3), both of which are semiconductive. It could not be a heat conductive material.
本発明の半導電性熱伝導材は、半導電領域で安定した体積抵抗を持ち、静電、除電、電磁波シールド、ゴムパッキンやオイルシール、ゴム接点や事務機用ロール等の用途について使用でき、特に、融点の高い無鉛ハンダを用いるリフローハンダ付け方法により部品を実装する際、高温下でのＩＣ等の実装部品の破損を防止するための吸熱材として好適に用いることができる。 The semiconductive heat conductive material of the present invention has a stable volume resistance in the semiconductive region, and can be used for applications such as static electricity, static eliminator, electromagnetic wave shield, rubber packing and oil seal, rubber contact and roll for office machines, In particular, when a component is mounted by a reflow soldering method using lead-free solder having a high melting point, it can be suitably used as a heat absorbing material for preventing damage to a mounted component such as an IC under high temperature.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004121087A JP2005298773A (en) | 2004-04-16 | 2004-04-16 | Semiconductive heat conductive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004121087A JP2005298773A (en) | 2004-04-16 | 2004-04-16 | Semiconductive heat conductive material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2005298773A true JP2005298773A (en) | 2005-10-27 |
Family
ID=35330702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004121087A Pending JP2005298773A (en) | 2004-04-16 | 2004-04-16 | Semiconductive heat conductive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005298773A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100861261B1 (en) | 2006-07-07 | 2008-10-01 | 도쿄엘렉트론가부시키가이샤 | Heat transfer structure and substrate processing apparatus |
| CN109735108A (en) * | 2019-01-04 | 2019-05-10 | 东莞市汉华热能科技有限公司 | A kind of thermally conductive gel and preparation method thereof of the low fuel-displaced one pack system of high thermal conductivity |
| JP2023028969A (en) * | 2021-08-20 | 2023-03-03 | 信越化学工業株式会社 | Electromagnetic wave-absorbable heat-conductive composition and cured product of the same, and semiconductor device |
-
2004
- 2004-04-16 JP JP2004121087A patent/JP2005298773A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100861261B1 (en) | 2006-07-07 | 2008-10-01 | 도쿄엘렉트론가부시키가이샤 | Heat transfer structure and substrate processing apparatus |
| CN109735108A (en) * | 2019-01-04 | 2019-05-10 | 东莞市汉华热能科技有限公司 | A kind of thermally conductive gel and preparation method thereof of the low fuel-displaced one pack system of high thermal conductivity |
| JP2023028969A (en) * | 2021-08-20 | 2023-03-03 | 信越化学工業株式会社 | Electromagnetic wave-absorbable heat-conductive composition and cured product of the same, and semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8221645B2 (en) | Heat dissipating material and semiconductor device using same | |
| KR102470083B1 (en) | High performance thermal interface materials with low thermal impedance | |
| JP3290127B2 (en) | Heat conductive silicone rubber composition and heat dissipation sheet comprising the heat conductive silicone rubber composition | |
| JP5233325B2 (en) | Thermally conductive cured product and method for producing the same | |
| JP7389014B2 (en) | insulation heat dissipation sheet | |
| JP6202475B2 (en) | Thermally conductive composite silicone rubber sheet | |
| KR20080006482A (en) | Thermally conductive silicone grease composition and cured product thereof | |
| KR101956370B1 (en) | A resin composition using heat padiating sheet having phase change material of electrically insulative | |
| WO2015190270A1 (en) | Heat-conductive sheet | |
| JP6739825B2 (en) | Heat conductive composition and heat conductive molded article | |
| CN114901756B (en) | Thermally conductive silicone resin composition, cured product, and thermally conductive silicone heat-dissipating sheet | |
| JP3847022B2 (en) | Thermally conductive elastomer composition, molded product thereof and laminate thereof | |
| JP2002138205A (en) | Thermal conductive molding | |
| JP2020007569A (en) | Thermally conductive sheet | |
| JP5154010B2 (en) | Thermally conductive silicone rubber composition | |
| JP2021046562A (en) | Thermally conductive sheet | |
| JP3340112B2 (en) | Thermal conductive material and manufacturing method thereof | |
| KR20190016417A (en) | Thermally conductive Sheet and Method for making the same | |
| JP2005298773A (en) | Semiconductive heat conductive material | |
| KR102821250B1 (en) | Thermally conductive silicone composition and its cured product | |
| JP4149846B2 (en) | Heat dissipation sheet | |
| JP2002003717A (en) | Thermal conductive sheet | |
| JP2004359712A (en) | High heat-conducting member and method for producing the same | |
| KR101490714B1 (en) | The manufacturing method for silicone-based damping pad using waste thermal pad and silicone-based damping pad by fabricated thereby | |
| JP2005100884A (en) | Electric connector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20060928 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20061003 |
|
| A625 | Written request for application examination (by other person) |
Free format text: JAPANESE INTERMEDIATE CODE: A625 Effective date: 20070412 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20080515 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090715 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090811 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100112 |