TW200817131A - Apparatus and method for polishing semiconductor wafers - Google Patents

Abstract

An apparatus and method for polishing semiconductor wafers uses multiple polishing surfaces, multiple polishing heads and multiple wafer stations to sequentially polish the semiconductor wafers. The wafer stations includes at least one wafer load-unload station to transfer the semiconductor wafers between the wafer load-unload station and the polishing heads.

Description

200817131 IX. Description of the invention: [Comparative reference material for related applications] This application is filed on August 8, 2006, and is filed on August 8, 2006. US Provisional Patent Application No. 60/837,276, August 25, 2006, US Provisional Patent Application Serial No. 60/840,1 92, 2006

U.S. Provisional Patent Application Serial No. 60/840,143, filed on Aug. 26, the benefit of U.S. Provisional Patent Application Serial No. 60/844, No. And all the US temporary patent applications are incorporated. TECHNICAL FIELD OF THE INVENTION The present invention relates generally to semiconductor processing equipment and, more particularly, to an apparatus and method for polishing semiconductor wafers. [Prior Art] Local and overall planarization of semiconductor wafers is becoming more and more important as more metal layers and inner dielectric layers are stacked on the wafers. A preferred method for planarizing a semiconductor wafer is chemical mechanical honing (CMP), wherein the surface of the semiconductor wafer is honed using a honing fluid provided between a semiconductor wafer and a honing pad. The CMP method is also widely used in damascene processes to form copper junctions on such semiconductor wafers.

Typically, a CMP apparatus includes a honing station on which a honing pad is placed and a wafer carrier that supports a semiconductor wafer and presses the wafer against the honing pad. The CMP apparatus can also include a wafer cleaning machine to clean and dry the honing wafers in 200817131.

One of the most important considerations of a CMP equipment is productivity. For higher productivity, a CMP device typically requires more honing stations and more wafer carriers. When the number of honing stations and honing carriers included in a CMP apparatus is increased, the configuration of the honing stations and the honing carriers becomes important to effectively honing a plurality of semiconductor wafers. Furthermore, it is also important to transfer the semiconductor wafers to and from the wafer carriers. However, since a CMP device having a large coverage requires a large cleaning chamber to accommodate the device, this translates into a large operational cost, so the coverage of a CMP device must also be considered. In view of these problems, what is needed is an apparatus and method for honing semiconductor wafers with high productivity, which does not require a large coverage. SUMMARY OF THE INVENTION An apparatus and method for honing semiconductor wafers uses a plurality of honing surfaces, a plurality of honing heads, and a plurality of wafer stations to continuously honing the semiconductor wafers. The wafer stations include at least one wafer load-and-load station for transporting the semiconductor wafers between the wafer loading and unloading station and the honing heads. An apparatus for honing a semiconductor wafer in accordance with an embodiment of the present invention includes first, second and third honing surfaces, first, second and third wafer stations, and a rotating assembly. The first, second and third honing faces are placed around a rotation axis. The first, second and third wafer stations are placed between the first, second and third honing surfaces and around the axis of rotation for the first, second and third wafer stations Each wafer station is placed between adjacent honing surfaces of the first, second and third honing surfaces. The first crystal-6-200817131 circular station is a wafer loading-loading station 'the wafer loading-loading station is configured to receive a semiconductor wafer' from the first wafer station The semiconductor wafer is carried to the first wafer station before the semiconductor wafer is transferred. The rotation assembly includes first, second and third honing heads. The rotating assembly is configured to rotationally move the first, second, and third honing surfaces and the first, second, and third wafer stations centered about the axis of rotation 1. Each honing head of the second and third honing heads. The number of honing heads included in the apparatus, the number of honing surfaces, and the number of wafer stations are the same.

An apparatus for honing a semiconductor wafer according to another embodiment of the present invention includes first, second, and third honing surfaces, first, second, third, and fourth wafer loading-loading stations And a rotating assembly. The first, second and third honing faces are placed around an axis of rotation. The first, second, third and fourth wafer loading-loading stations are placed between the first, second and third honing surfaces and around the axis of rotation for the second crystal a circular loading _ loading station is placed between the first and second honing surfaces, the third wafer loading _ loading station is placed between the second and third honing surfaces, and the First and fourth wafer loading-loading stations are placed between the first and third honing surfaces. The rotation assembly includes first, second and third honing heads. The rotating assembly is configured to load-load at least some of the first, second, and third honing surfaces and the first, second, third, and fourth wafers centered on the axis of rotation Each of the first, second and third honing heads is rotationally moved between the stations. An apparatus for honing a semiconductor wafer in accordance with another embodiment of the present invention includes first and second honing surfaces, first and second wafer load-and-load stations, and a rotating assembly. The first and second honing surfaces surround an axis of rotation 200817131

It is placed around. The first and second wafer loading-loading stations are disposed between the first and second honing surfaces and around the axis of rotation for each of the first and second wafer stations A circular station is placed between the first and second honing surfaces. Each of the first and second wafer load-loading stations is configured to receive a semiconductor wafer for loading from the first and second wafers - The semiconductor wafer is carried out to the first and second wafer load-and-load stations before the carrier transmits the semiconductor wafer. The rotating assembly includes first and second honing heads. The rotating assembly is configured to rotationally move the first and second turns between at least some of the first and second honing surfaces and the first and second wafer loading-loading stations about a center of the axis of rotation Every honing head of the grinding head. The number of honing heads included in the equipment punch, the number of honing surfaces, and the number of wafer loading-loading stations are the same. An apparatus for honing a semiconductor wafer in accordance with another embodiment of the present invention includes first and second honing surfaces, first and second wafer stations, and a rotating assembly. The first and second honing surfaces are placed around an axis of rotation such that the centers of the first and second honing surfaces define a first line with the axis of rotation. The first and second wafer stations are placed around the axis of rotation and between the first and second honing surfaces such that each of the first and second wafer stations is placed A second line is defined between the first and second honing surfaces and the centers of the first and second wafer stations and the axis of rotation. The first and second wafer stations are disposed relative to the first and second honing surfaces such that the first line is not perpendicular to the second line. The rotating assembly includes first and second honing heads. The rotating assembly is configured to move each of the first and second honing heads about the axis of rotation about at least some of the first and second honing surfaces and the first and second wafer stations A bit of grinding. The number of honing heads included in the equipment, the number of honing surfaces, and the number of wafer stations are the same.

An apparatus for honing a semiconductor wafer in accordance with another embodiment of the present invention includes first and second honing surfaces, first, second, and third wafer loading and unloading stations and a rotating assembly. The first and second honing faces are placed around a circumference of the axis of rotation. The first, second, and third wafer load-loading stations are placed around the axis of rotation and between the first and second honing surfaces for the first and third loadings - A loading station is placed between the first and second honing surfaces and the second loading-loading station is placed between the first and second honing surfaces. The rotating assembly includes first and second honing heads. The rotating assembly is configured to rotationally move the first and second honing surfaces and the first, second, and third wafer loading-loading stations about the axis of rotation One of the honing heads of the first and second honing heads. A system for honing semiconductor wafers in accordance with another embodiment of the present invention includes first and second honing equipment, a wafer transfer apparatus, and a post CMP cleaning machine. Each of the first and second honing equipment includes first, second and third honing surfaces, first, second and third wafer stations and a rotating assembly. The first, second and third honing surfaces are placed around the circumference of a rotational axis. The first, second and third wafer stations are placed around the axis of rotation between the first, second and third honing surfaces for the first, second and third wafer stations Each wafer station is placed between adjacent honing surfaces of the first, second and third honing surfaces. The first wafer station is a wafer loading-loading station, and the wafer loading-loading station is configured to be connected to -9-200817131

A semiconductor wafer is received to carry the semiconductor wafer to the first wafer station prior to transporting the semiconductor wafer from the first wafer station. The rotating assembly includes first, second and third honing heads. The rotating assembly is configured to rotationally move the first, second, and at least some of the first, second, and third honing surfaces and the first, second, and third wafer stations about the axis of rotation Two honing heads of the second and third honing heads. The wafer transfer device is positioned adjacent to the first and second honing devices to enter a first wafer station of each of the first and second honing devices. The post CMP cleaner is placed adjacent to the wafer transfer apparatus such that the wafer transfer apparatus is placed between the post CMP cleaner and the first and second honing equipment. The post CMP washer is configured to clean a semiconductor wafer that has been honed in one of the first and second honing equipment and transferred to the post CMP washer by the wafer transfer apparatus. A system for honing semiconductor wafers in accordance with another embodiment of the present invention includes first and second honing equipment and a wafer transfer apparatus. Each of the first and second honing equipment includes first, second and third honing surfaces, first, second and third wafer stations and a rotating assembly. The first, second and third honing faces are placed around an axis of rotation. The first, second and third wafer stations are placed around the axis of rotation between the first, second and third honing surfaces for the first, second and third wafer stations Each wafer station is placed between adjacent honing surfaces of the first, second and third honing surfaces. The first wafer station is a wafer loading-loading station, and the wafer loading-loading station is configured to receive a semiconductor wafer for transmitting the semiconductor from the first wafer station The semiconductor wafer is carried out to the first wafer station before the wafer. The rotating assembly includes first, second, and third -10- -10- 200817131 grinding heads. The rotation assembly is configured to rotationally move the first between the first, second, and third honing surfaces and the first, second, and third wafer stations centered on the axis of rotation , each of the second and third honing heads. The wafer transfer device is positioned adjacent to the first and second honing devices to enter a first wafer station of each of the first and second honing devices. Positioning the first and second honing equipment such that the first wafer station of each of the first and second honing equipment and the first and third honing surfaces are more than the second and third The wafer station and the second honing surface are adjacent to the wafer transfer device.

A method for honing a semiconductor wafer in accordance with an embodiment of the present invention includes: first, second, and third of a first wafer station in a honing apparatus and a honing apparatus Transferring a semiconductor wafer between one of the honing heads, the first wafer station being a wafer loading-loading station; using at least one of the first, second and third honing heads of the rotating assembly The honing head continuously hones the semiconductor wafer on the first, second, and third honing surfaces of the honing apparatus; and using at least the first, second, and third honing heads of the rotating assembly a honing head continuously transports the semiconductor wafer to the second and third wafer stations of the honing device, and each of the first, second, and third wafer stations is placed in the Between adjacent honing surfaces of the first, second and third honing surfaces. A method for honing a semiconductor wafer according to another embodiment of the present invention includes: a first wafer loading-loading station in a honing device and a first rotating assembly of the honing device Transmitting a semiconductor wafer between one of the second honing heads; using at least one honing head of the first and second honing heads of the rotating assembly on the first and second honing surfaces of the honing apparatus On the continuous honing -11- 200817131. After the semiconductor wafer is honed on the first honing surface, the semiconductor wafer is transferred to the semiconductor wafer using at least one honing head of the first and second honing heads of the rotating assembly a second wafer loading-loading station of the honing device, including loading the semiconductor wafer to the second wafer loading-loading station, the first and second wafer loading-loading stations Each wafer loading-loading station is placed between the first and second honing surfaces. A method for honing a semiconductor wafer according to another embodiment of the present invention includes: a first wafer station of a honing device and a first and a second Φ of a rotating assembly of the honing device Transferring a semiconductor wafer between one of the grinding heads, the first wafer station being a wafer loading-loading station; using at least one honing head of the first and second honing heads of the rotating assembly The semiconductor wafer is continuously honed on the first and second honing surfaces of the honing apparatus, and the first and second honing surfaces are placed around an axis of rotation for the first and second 硏a center of the grinding surface defining a first line with the axis of rotation; and after honing the semiconductor wafer on the honing surface of the table, using at least one honing head of the first and second honing heads of the rotating assembly Transmitting the semiconductor wafer to a second wafer station of the honing tool device, the first and second wafer stations being placed around the axis of rotation and between the first and second honing surfaces So that each of the first and second wafer stations is placed between the first and second honing surfaces and The centers of the first and second wafer stations define a second line with the axis of rotation, and the first and second wafer stations are disposed relative to the first and second honing surfaces such that the first line is not perpendicular to the first Two straight lines. A method for honing a semiconductor wafer according to another embodiment of the present invention includes: transferring a semiconductor wafer to a -12-200817131 using a wafer transfer device

One of the first wafer stations of the honing equipment, the first wafer station is a wafer loading-loading station; the first, second and third honing of the rotating assembly is respectively performed using one of the honing equipment The head continuously transports the semiconductor wafer to the first, second and third honing surfaces of the honing device; the first, second and third honing heads of the rotating assembly are respectively used in the honing device The semiconductor wafers are continuously honed on the first, second, and third honing surfaces; the semiconductor wafers are continuously transferred to the cymbals using the first, second, and third honing heads of the rotating assembly, respectively a second, third, and fourth wafer station of the grinding apparatus, the first wafer station being placed between the fourth wafer station and the first honing surface, the second wafer station being placed Between the first and second honing surfaces, the third wafer station is placed between the second and third honing surfaces, and the fourth wafer station is placed on the third honing surface Between the first wafer station; and using the wafer transfer device to remove the semiconductor wafer from a fourth wafer station of the honing device, the fourth wafer station being loaded with another wafer - Outbound. A method for honing a semiconductor wafer according to another embodiment of the present invention includes: transferring a semiconductor wafer to a first wafer station of a honing device using a wafer transfer device, the first wafer a wafer loading-loading station; the first and second honing heads of one of the honing equipment are respectively used to continuously transfer the semiconductor wafer to the first and second of the honing equipment a honing surface; the first and second honing heads of the rotating assembly are respectively used to continuously honing the semiconductor wafer on the first and second honing surfaces of the honing apparatus; respectively, using the rotating assembly The first and second honing heads continuously transport the semiconductor wafer to the second and third wafer stations of the honing device, the first wafer station being placed at the third wafer station and the first Between the honing surfaces, the second crystal-13-200817131 circular station is placed between the first and second honing surfaces, and the third wafer station is placed on the second honing surface and the first a wafer station; and using the wafer transfer device to remove the semiconductor wafer from a third wafer station of the honing device, Another wafer-based three wafer loading station - unloading station. Other aspects and advantages of the present invention will become apparent from the Detailed Description of the Drawing. [Embodiment] Referring to Figures 1 to 3, a honing apparatus 1 A according to an embodiment of the present invention will be described. The honing apparatus 1 A includes three honing surfaces 1 〇a_ 1 〇c, three honing heads 20a-20c, and three wafer loading-loading stations I5a-15c. The honing device 1A may additionally include a crystal transfer device 50. As described in more detail below, the honing apparatus 1 A is capable of continuously processing a plurality of semiconductor wafers. Figure 1 shows that the first, second and third honing heads 20a-20c are placed on the first, second and third wafer load-and-drop stations 15a-15c, respectively.

Time honing equipment 1A. Fig. 2 shows the honing apparatus 1A when the first, second and third honing heads 20a-20c are placed on the first, second and third honing surfaces 10a-10c, respectively. Figure 3 shows that the first, second, and third honing heads 20a-20c are placed over the first, second, and third wafer load-and-load stations 15a-15c, respectively. Grinding device 1A. As used herein, π is placed over "" means vertically aligned such that an object (eg, one of the honing heads 20a-20) is directly on another object (eg, such wafer loading) Above the one of the inbound and outbound stations 15a-15c. The honing heads 20a-200c are attached to a rotating assembly 12, and the rotating assembly 12 is operative to be on the honing surfaces 10a -10c rotates the honing heads between the wafer loading-loading stations-14-200817131 15a-15c. The rotating assembly 12 includes rotating and vertical driving mechanisms 25a-25c, support arms 45a-4.5c, a rotary shaft 30 and a central rotary and vertical drive mechanism 35. The honing heads 20a-20c are coupled to their respective rotary and vertical drive mechanisms 25a-25c, which control the rotary and vertical drive mechanisms 25a-25c Rotation and vertical movement of individual honing heads 20a-20c. These individual rotary and vertical drive mechanisms 25a-25c are coupled to their respective support arms 45a-45c to which the support arms 45a-45c are attached.

The support arms 45a-45c are configured or designed such that the distance between the axis of rotation 36 of the rotary shaft 30 and the center of the first honing head 20a, the axis of rotation 36 of the rotary shaft 30, and the second honing The distance between the centers of the heads 2 Ob and the distance between the axis of rotation 36 of the axis of rotation 30 and the center of the third honing head 20c are substantially equal. The rotary shaft 30 is coupled to the central rotary and vertical drive mechanism 35. The central rotary and vertical drive mechanism 35 controls the rotation and vertical movement of the rotary shaft 30. Therefore, the support arms 45a-45c and the honing heads 20a-20c are uniformly rotated by the center rotation and vertical drive mechanism 35 about the rotation axis 36 of the rotation shaft 30. In this embodiment, the support arms 45a-45c, the wafer loading-and-loading stations 15a-15c and the honing surfaces 10a-10c are configured such that (1) can be loaded in the first wafer. The loading station 15a, the first honing surface 10a, and the second wafer loading/unloading station 15b exclusively move the first honing head 20a; (2) can be loaded in the second wafer - The second honing head 20b is specifically moved between the loading station 15b, the second honing surface 10b and the third wafer loading-depotting station 15c; and -15-200817131 (3) is available in the third crystal The circular loading-loading station 15c, the third honing surface 10 (and the first wafer loading-loading station 15a) specifically move the third honing head 20c. The honing heads 20a-20c The semiconductor wafer is configured to hold the semiconductor wafer. Each of the honing heads 20a-20c is designed to hold a single semiconductor wafer. In one embodiment, the honing heads 20a-20c The system is configured to use a vacuum to hold the semiconductor wafer, wherein a vacuum is applied to the lower surface of the honing head that is in contact with the wafers. The honing heads 20a-20c are via the support arms 45a- 45c is attached to the rotating assembly 12 so that When one of the honing heads is placed over one of the honing surfaces, the honing heads are all placed above the honing surfaces l〇a-10c, and when such When one of the honing heads is placed over one of the wafer loading and unloading stations, the honing heads are all placed at the wafer loading and unloading stations 15 a-15c Above.

Further arranging the honing surfaces l〇al〇c and the wafer loading-loading stations 15a-15c so that (1) the first wafer loading-loading station 15a is placed in the first Between the third honing surface 10c and the first honing surface 10a; (2) the first wafer loading-loading station 15b is placed on the first honing surface l〇a and the second Between the honing planes l〇b; and (3) the third wafer loading-loading station 15c is placed between the second honing plane 1b and the third honing surface 10c. The honing faces l〇a-l〇c may be the upper surface of the honing pad that is attached to the individual rotatable honing table. In another case, the honing surfaces l〇a_1〇c may be the upper surfaces of the rotatable honing stations. In an embodiment, the honing faces 10a-10c are disposed as described in Fig. 3 such that the honing faces are equally spaced from one another about the axis of rotation 36. Further configuring the wafer load-loading stations 15a-15c to facilitate the rotation

200817131 The distance between the axis of rotation 36 of the rotating shaft 30 and the first wafer loading-loading station, the rotation axis of the rotating shaft 30 and the distance between the center of the first-input-out station 15b and The distance between the third axis of the rotating shaft 30 and the center of the third wafer loading-discharging station 15c is equal to or the like. In one embodiment, as shown in Figures 1 through 3, the load-and-load stations 15a-e5c are arranged such that the wafer load-and-load axes 36 are equally spaced from one another. Referring to Figures 4 and 5, there is shown a #round loading-loading station 15' in accordance with one implementation of the present invention. The wafer loading-loading station 15' is an example of one of the loading stations, which can be used for the loading stations 15a-15c of the honing equipment 1A. Fig. 4 is a cross-sectional view of the wafer loading and unloading station diagram, and Fig. 5, Fig. 4, along the line Q Q of the wafer carrier. The wafer loading-loading station 1 5 includes a cup ring 195, a lift 200, a wafer tray 210, a first plurality of second plurality of nozzles 250, a drain passage 260, a first stream f, and A second fluid passage 272. The fluid passages 270 are 272 to the fluid source (not shown). The shallow channel 26 0 can be connected to (not shown). The cup ring 195 and the wafer tray 210 are mounted to the cup holder. The wafer tray 210 includes a hole at the center so that the lift is placed at the center of the cup holder 190. As shown in FIG. 5, the 5 is connected to an elevator cylinder 20 via a lifting piston 202, and is used to raise a wafer to a so-called wafer carrier (for example: The two wafer-loaded rotation axes of the honing heads 20a-20c 15a are substantially similar to the wafer stations loaded with the wafers of the spinning example - wafer loading 1 5' above-input-loading station : 190 , a nozzle 240 , I channel 270 can be connected to a drain pump 1 90 . Machine 200 can be a dry machine 200 > the lift honing head (also one of them) and -17- 200817131 from the honing The head is lowered. The lift 200 is preferably made of a soft material (eg rubber) to avoid damage to the wafer surface. The lift 200 has a small

The surface area of the wafer that is loaded and unloaded by the elevator. The elevator pneumatic cylinder 204 is coupled to the first fluid passage 270 and is operated by a fluid supplied via the first fluid passage 270. Nitrogen is an example of a fluid that can be used in the elevator cylinders 04. The elevator 200 is moved up and down by the elevator pneumatic cylinder 204. Lifting the elevator 200 above the upper surface of the cup ring 195 to transfer from a wafer transfer device (eg, the wafer transfer device 50) or a honing head (eg, the honing heads 20a-20c) One) receives a wafer W. After the elevator 200 receives the wafer W, the elevator is moved down to the wafer tray 210 to place the wafer W on the wafer tray 210. In this manner, the wafer W is carried out to the wafer load-output station 丨5*. As shown in Fig. 5, the first plurality of nozzles 240 are mounted above the cup holder 190 and the second plurality of nozzles 250 are mounted on the inner side of the cup ring 195. The first and second nozzles 240 and 250 are coupled to the second fluid passage 27 2 and for spraying a fluid (e.g., deionized (DI) water) supplied through the second fluid passage 27 2 . The fluid used (e.g., DI water used) is discharged through the drain passage 260 by the drain pump (not shown). The first and/or second plurality of nozzles 240 and 250 allow the wafer to be loaded when a wafer and/or a honing head is placed at the wafer load-and-load station i 5 1 - The output station 15' cleans the wafer and/or the honing head. Referring to Figures 6(a) and 6(b), a method for loading a wafer W from a wafer loading-discharging station 15' to a honing head 2 is described in accordance with an embodiment of the present invention ( The process sequence of the crucible, wherein the honing head 20' will be one of the honing heads 20a_20c -18-200817131. The 6th (a) and 6(b) diagrams of the wafer loading-output of FIG. A continuous cross-sectional view of the station 15'. After placing the wafer W on the wafer tray 210 as previously described in relation to Figure 5, the honing head 20' is placed as shown in Figure 6(a) Placed on the wafer loading-loading station 15'. As shown in Fig. 6(a), the honing head 20" may include a positioning ring 280 to limit the wafer during a honing process W. Next, as shown in Fig. 6(b), the elevator 200 is moved up and the wafer W on the elevator is received by using the honing head 20' which is supplied with vacuum via the vacuum passage 285. After the honing head 20_ receives the wafer W Φ, the elevator 200 is moved downward. In order to carry the wafer W from the honing head 20', the vacuum provided by the vacuum channels 285 is removed, which will The wafer W is released from the honing head 20f to the wafer carrier The in-and-out 15' elevator 200. Then, the wafer loading-loading 15' can be washed by spraying water to the honing head 20' to clean the honing head 2.

Even though it has been described that the honing apparatus 1 has three honing surfaces 10a-10c, three honing heads 20a-20c and three wafer loading-out stations 15a-1 5c, other according to the invention The honing apparatus 1A of the embodiment has a different number of honing heads, honing surfaces, and wafer loading-loading stations. Typically, the honing apparatus 1 A includes N honing heads, N honing surfaces, and N wafer load-and-load stations, where N is an integer greater than one. Referring to Figures 1 through 3, a method of processing a semiconductor wafer in the honing apparatus 1 A in accordance with an embodiment of the present invention will be described. A wafer to be processed W 1 is transferred and carried out to the first wafer load-and-load station 15a by the wafer transfer device 50. Next, the first wafer W1 is loaded from the first wafer loading/unloading station 15a to the first honing head 20a. The loading of the wafers into the crystals -19·200817131 and the loading of the loading and unloading stations 15a-15c and the loading from the wafer loading and unloading stations 15a-15c may be similar to the above described wafers. Load-loading station 15_ loading and loading process. After loading into the first honing head 20a, the first honing head 20a is then rotationally moved to the first honing surface by loading the τ carrying station 15 5 a from the first wafer. a is to transfer the first wafer W1 from the first wafer loading-discharging station 15a to the first honing surface 10a. As used herein, the rotary shaft 30 is rotated about the axis of rotation 36 to achieve a rotational movement of the honing heads 2 0 a - 2 0 c. After this rotational movement, the honing heads 20a-20c are placed on the honing surfaces 10a-10c, respectively, as described in Fig. 2-2. After the first wafer W1 is removed from the first wafer loading-discharging station 15a, a second wafer W2 is transferred and carried out to the first wafer carrier by the wafer transfer device 50. In-out station 1 5 a. Then, the first honing head 20a is on the first honing surface l〇a

The first wafer W1 is honed. The honing process of the first wafer W1 on the first honing surface 10a includes, by the first honing, the head 20a rotates and presses the first wafer W1 on the first honing surface 10a, and rotates The first honing surface l〇a and a first honing liquid are supplied to the first honing surface 10 a. After the honing process is completed, the first wafer W1 is rotated by moving the first honing head 20a to the second wafer loading-depot station 15b from the first honing surface 10a. The first honing surface l〇a is transferred to the second wafer loading-discharging station 15b. After this movement, as described in Fig. 3, the honing heads 20a-2 0c are placed above the wafer load-and-load stations 15b, 15c and 15a, respectively. Then, the first wafer W1 is loaded from the first honing head 20a to the second wafer loading in the manner described above with respect to the wafer loading-discharging station 15'. The station 15b is carried out. After the first wafer wi is loaded, the first honing head 20a is rotationally moved back to the first wafer load-and-load station i5a. After this movement, the honing heads 20a-20c are placed above the wafer load-and-load stations 15a-15c, respectively, as described in Figure 1. Then, the second wafer W2 is loaded from the wafer loading/unloading station 15a to the first honing head 20a. Loading the first wafer W1 from the wafer

- The loading station 15b is loaded to the second honing head 20b. Then, the first and second honing heads 20a and 20b are respectively rotationally moved to the first and second honing surfaces 10a and 10b to respectively respectively the second wafer W2 and the first wafer W1. Transfer to the first and second honing surfaces l〇a and l〇b. After this movement, the honing heads 20a-2c are placed on the honing surfaces 10a-10c as described in Fig. 2. After the second wafer W2 is removed from the first wafer loading-discharging station 15a, a third wafer W3 is transferred and carried out to the first wafer carrier by the wafer transfer device 50. In-and-out station 15a. Then, the second wafer W2 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the second wafer W2 on the first honing surface 10a includes rotating and pressing the second wafer W2 on the first honing surface 10a by the first honing head 20a, and rotating the The first honing surface 10a and the first honing liquid are supplied to the first honing surface l〇a. The first wafer W1 is also honed on the second honing surface 10b by the second honing head 20b. The honing process of the first wafer W1 on the second honing surface 10b includes rotating and pressing the first wafer W1 on the second honing surface 10b by the second honing head 20b. Rotating the second honing surface 1 Ob and supplying a second honing liquid to the second honing surface 10b for the period from 21 to 200817131. After completing the honing process, the second and third wafer loading-and-loading stations 15b and 15c are moved to the second and third wafer loading and unloading stations 15b and 15c, respectively, by rotating the second and third wafer loading stations 15b and 15c, respectively. The wafer W2 and the first wafer W1 are transferred to the second and third wafer load-and-load stations 15b and 15c, respectively. After this movement, as described in Fig. 3, the honing heads 20a-20c are placed above the wafer load-and-load stations 15b, 15c and 15a, respectively.

Then, the second wafer W2 is carried out from the first honing head 20a to the second wafer carrier-loading station 15b. The first wafer W1 is also carried out from the second honing head 20b to the third wafer carrier-loading station 15c. After the first and second wafers W 1 and W2 are loaded, the first and second honing heads 20a and 20b are rotationally moved back to the first and second wafer load-and-load stations 15a, respectively. And 15b. After this movement, the honing heads 20a-20c are placed above the wafer load-and-drop stations 15a-15c, respectively, as described in FIG. Then, the third wafer W3 is loaded from the first wafer loading-discharging station 15a to the first honing head 20a. The second wafer W2 is also loaded from the second wafer loading-ejection station 15b to the second honing head 20b. Similarly, the first wafer W1 is loaded from the third wafer loading/unloading station 15c to the third honing head 20c. Then, the first, second, and third honing heads 20a-20c are rotationally moved to the first, second, and third honing surfaces 10a-10c, respectively, to the third wafer W3, the first The two wafers W2 and the first wafer W1 are respectively transferred to the first, second, and third honing surfaces 10a-10c. After this movement, as described in Fig. 2, the honing heads 20a-20c are placed above the honing surfaces 10a-10c, respectively. -22- 200817131 Then, the third wafer W3 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the third wafer W3 on the first honing surface 10a includes rotating and pressing the third wafer W3 on the first honing surface 10a by the first honing head 20a. Rotating the first honing surface l〇a and supplying the first honing liquid to the first honing surface l〇a. The second wafer W2 is also honed on the second honing surface 10b by the second honing head 2〇b. The second wafer W2 is on the second honing surface 10b

The honing process includes rotating and pressing the second wafer W2 on the second honing surface 10b by the second honing head 20b, rotating the second honing surface 1 Ob and supplying the second honing Liquid to the second honing surface l〇b. Similarly, the first wafer W1 is honed on the third honing surface 10c by the third honing head 20c. The honing process of the first wafer W1 on the third honing surface 10c includes rotating and pressing the first wafer 'W1 on the third honing surface 10c by the third honing head 20c, and rotating The third honing surface 10c and the supply of a third honing liquid to the third honing surface i 〇 c°, after the honing processes are completed, respectively, by rotating the first, second and third respectively The honing heads 20a, 20b, and 20c to the second, third, and first wafer loading and unloading stations 15b, 15c, and 15a to the third wafer W3, the second The wafer W2 and the first wafer W1 are transferred to the second, third, and first wafer load-and-load stations 15b, 15c, and 15a, respectively. After this movement, as described in Fig. 3, the honing heads 20a-20c are placed above the wafer loading-and-loading stations 15b, 15c and 15a, respectively. Then, the third wafer W3 is carried out from the first honing head 20a to the second wafer-loading station 15b. The second wafer W2 is also carried from the second 2323-200817131 honing head 20b to the third wafer-loading station 15c. Similarly, the first wafer W1 is carried out from the third honing head 20c to the first wafer carrier-loading station 15a. Then 'loading from the second, third and first wafer-loading stations 15b, 15c and 15a respectively toward the first, second and third wafers - carrying out stations 1 5 a, 1 5 The first, second and third honing heads 20a-20c are rotationally moved by b and 15c. When the first, second, and third honing heads 20 & -20 正在 are being rotated, the wafer transfer device 50 is loaded from the first wafer by the wafer transfer device. In addition to the first wafer W1 and the wafer transfer device 5, a fourth wafer W4 is transferred and carried out to the first wafer load-and-load station 15a. Then, the fourth wafer W4 is loaded from the first wafer loading/unloading station 15a to the first honing head 20a. The third wafer W3 is also loaded from the second wafer loading-ejection station 15b to the second honing head 20b. The second wafer W2 is also loaded from the third wafer loading-discharging station 15c to the third crucible.

Grinding head 20c. Then, the fourth wafer W4, the third wafer W3, and the second wafer W2 are respectively transferred to the first, second, and third honing surfaces 10a-1c. The second, third and fourth wafers W2, W3 and W4 are further processed in the honing device 1A in a continuous manner identical to the first wafer W1. In this continuous mode, a plurality of wafers can be continuously transferred between the wafer load-and-load stations 15a-15c of the honing equipment 1A and the honing surfaces l〇al〇c and The honing surface l〇al〇c is honed by the honing heads 20a-20c. In some embodiments, the honing surfaces l〇a-10c are by theirs -24- 200817131

Do not use a pad conditioner (not shown) for maintenance. In some embodiments, the wafer load-and-load stations 15a-15b may have a plurality of DI water nozzles like the wafer load-and-load station 15' for the wafers and the like. When the honing head is placed at the wafer loading-discharging stations 15a-15c, the wafers and the honing heads 20a-20c can be cleaned. However, in other embodiments, the wafer load-and-load stations 15a-15c may not have any DI water nozzles, and thus, are not configured to clean the honing heads 20a-20c and their crystals. circle. In some embodiments, the wafer load-and-load stations 15a-15c can have wafer loading and receiving mechanisms similar to the wafer load-load station 15' for the honing heads When placed at the wafer load-and-load stations 15a-15c, the wafers are loaded into and loaded from the honing heads 20a-20c.

Turning now to Figure 7, a honing system 100 in accordance with an embodiment of the present invention is shown. The honing system 100 includes two honing equipments 1A-1 and 1A-2 identical to the honing apparatus 1A of Figures 1 to 3. Therefore, the same component symbols as used in Figures 1 through 3 will be used to denote the similar elements in Figure 7. The honing system 1 further includes a post CMP washer 150, the wafer transfer device 50, a buffer station 120, a wafer cassette unit 105, and a wafer transfer device 110. The wafer transfer device 50 is mounted on a linear track 55 on which the wafer transfer device 50 can move linearly to enter the honing devices 1A-1 and 1A-2 and the subsequent CMP Washing machine 1 50. Similarly, the wafer transfer device 110 is mounted on a linear track 115, and the wafer transfer device 110 can be linearly moved on the linear track 115 to enter the wafer cassette unit 105. The buffer station 120 and the subsequent CMP -25-

200817131 Washing machine 150. As shown in FIG. 7, the honing equipment 1 a -1 and 1 A - 2, the post-cleaning machine 150, the wafer transfer device 50, the buffer station 120 and the transfer device 110 are placed in a repair In the zone, however, the pod unit is placed in a work area. The maintenance area and the work area are defined by a wall that separates the two areas. The wafer transfer device is placed adjacent to the wafer cassette unit 1 〇 5, however, separated by the wall 155 wafer cassette unit 105. The rear CMP washer is placed adjacent to the circular transfer device 110 so that the wafer transfer device is located between the rear washer 150 and the cassette unit 1 〇 5. As shown in FIG. 7, the circular transfer device 50 and the buffer station 120 are placed between the rear CMP clearing 150 and the honing equipment 1 a -1 and 1 a - 2 , and the honing equipment and 1 A-2 is configured in a side-by-side configuration. If the first honing device 1A-1 is not set or positioned as shown in Table 7, the first wafer loading-loading station 15a, the first surface l〇a and the third 硏 of the honing device 1A-1 The grinding surface l〇c is closer to the wafer transfer device 50 than the second in-and-out station 15b, the third wafer loading-discharging station 15c, and the second wafer 10b_ of the first honing device. Similarly, the honing apparatus 1A-2 is disposed or positioned such that the first wafer loading and unloading station 15a, the first honing surface 10a, and the third honing surface i 〇c of the honing apparatus 1A-2 are larger than the first A second wafer loading-loading station 15b, a third wafer loading-loading 150, and a second honing surface 10b of a device are adjacent to the wafer transfer device 50. In the embodiment, the honing devices 1A_1 and 1A-2 are positioned such that the first and third honing surfaces 10a and 10c of the first honing device are linearly CMP wafers 105 125 110 with the crystal CMP The crystal washing machine 1 A-1 is mounted on the linear rail 55 with a honing circular grinding surface second and a second arboring station and a configuration -26-200817131 parallel to the linear rail 55. The wafer transfer device 50. With the configuration of the honing devices 1A-1 and 1A-2, one or more users can access each of the honing surfaces of the honing equipment 1A-1 and 1A_2 in the service area to repair the honing equipment 1A-1 and 1A-2. Any of the honing surfaces of the honing equipment 1 A-1 and 1 A-2 may include servicing the honing surfaces and replacing the honing pads associated with the honing surfaces. As shown in FIG. 7, a user 110 can access the first honing surface l〇b of the first honing device 1A-1, and a user 111 can access the first Φ second honing device 1A-2. a second grinding surface l〇b, a user 112 can access the first honing surface l〇a of the first honing equipment 1A-1, and a user 113 can be in the first honing equipment 1A-1 a three wafer loading-loading station 15c and a second wafer loading-loading station 15b of the second honing equipment 1A-2 and a third honing surface 10c of the first honing equipment 1A-1 a space between the first honing surface 10a of the second honing equipment 1A-2 is close to the third honing surface 10c of the first honing equipment 1A-1 and the second honing apparatus 1A-2 The first honing surface 10a, and a user 114 can approach the third 该 of the third honing device 1A-2 at a space between the third wafer loading-discharging station 15c^ and the wall 125. Grinding surface 1 0 c. The cassette unit 105 is configured to store a wafer to be honed in the honing system 1 and a wafer that has been honed in the honing system. The wafer transfer apparatus 110 operates to transfer wafers from the wafer cassette unit 105 to the buffer station 120 and to transfer the wafers from the subsequent CMP cleaner 150 to the wafer cassette unit 105. The buffer station 120 is used to temporarily retain a wafer to be honed from the wafer cassette unit 105. The wafer transfer device 50 operates at -27-

200817131 Transfers the wafer from the buffer station 120 to the first wafer load-discharge station 5a of the first and second 及 and 1Α-2. The wafer rate is also operative to transfer wafers from the first and second honing equipment 1A_1 and 1A. The round load-loading station 15a to the CMP to clear the first and second honing equipment 1A- The 1 and 1A-2 operations have a method processing circle for the honing apparatus 1A of Figs. 1 to 3. Processing the first set of wafers in the first honing apparatus 1A-1 transfers the first set of wafers to the i Φ washing machine 150 by the wafer transfer apparatus 50. After the second processing in the second honing apparatus 1A-2, the second set of wafer CMP cleaning machine 150 is performed by the wafer transfer apparatus 50. In one embodiment, each phase from the beginning of the first wafer transferred by the first group of crystal buffer stations 120 and the second group of wafers includes each of the transmissions from the buffer station 120. Was separated by wafers. The post CMP cleaner 150 operates to clean the wafers that have been honed in the crucibles and 1A-2. The rear CMP washer input station 152, a washing station 153, and a drying station 154. The post CMP washer 150 receives the honed wafers conveyed by the wafer at the input station 152, cleans the wafer at the cleaning station 153, and dries the wafers at the drying station 154. The dry wafers are then transferred to the wafer cassette unit by device 110. In the illustrated embodiment, the wafer transfer apparatus 50 and the apparatus. That is, each of the wafer transfer devices 50 and 110 includes a single robot arm to hold and transfer a first crystal of the device 1A-1 to the device 50 2 each time. Receiving crystals according to the above, and then, by means of the CMP, the wafer is cleaned, and then transferred to the back circle, including the spacer, and the first wafer grinding apparatus 1 A - 1 150 includes an operation. The wafer of the transfer device 50 is transferred to the wafer by a 105 ° 1 10 system one-arm-wafer transfer circle. In other embodiments of -28-200817131, one or both of the wafer transfer devices 50 and 1 1 may be dual-arm devices. In the embodiment where the wafer transfer device 110 includes both arms, the first arm of the wafer transfer device 110 can be specifically used to transfer wafers from the wafer cassette unit 105 to the buffer station 120, and The second arm of the wafer transfer device 110 can be specifically configured to transfer wafers from the drying station 154 of the post CMP washer 150 to the wafer cassette unit 1 〇5. Similarly, in the embodiment in which the wafer transfer device 50 includes both arms, the first arm of the wafer transfer device 50 can be specifically used to transfer wafers from the buffer station to the buffers. The first wafer loading-loading station i5a of the grinding apparatus 1Α-1 and 1Α-2, and the second arm of the wafer transferring apparatus 50 can be used exclusively for drawing wafers from the honing equipment 1A-1 And the first wafer load-loading station i5a of 1A-2 is transferred to the input station 152 of the subsequent CMP washer 150. Moreover, in some embodiments, the first arm of the wafer transfer device 110 can have a flipping mechanism so that the first arm can be flipped before the wafers are carried out to the buffer station 1 20 These wafers. Similarly, in some embodiments, the second arm of the wafer transfer device 50 can have an inversion mechanism to enable the second arm to carry the wafers to the input station of the post-CMP cleaning station 150. Turn the wafers forward before 1 5 2 . Turning now to tables 8 and 9, a honing apparatus 1B in accordance with another embodiment of the present invention is shown. Figure 8 is a top view of the honing equipment iB. Figure 9 is a partial side view of the honing apparatus 1 B of Figure 8. The honing device i B is similar to the honing device 1 a of Figures 1 to 3. Therefore, the same element symbols used in Figs. 1 to 3 will be used to denote similar elements in Figs. 8 and 9. The honing device 1 B includes all the components of the honing device 1 a, and -29-200817131 further includes a first cleaning arm 51a, a second cleaning arm 51b and a third cleaning arm 51c, which are operated by the cleaning arm Treating the honing surfaces l〇a_l〇c and the wafer loading-loading stations 15a-15c with a fluid (eg, DI water and/or chemicals) to remove honing fluid residues or defects Grinding by-products. As described in Fig. 8, the first, second and third cleaning arms 51a-51c are part of a rotating assembly 12B.

In the embodiment, one of the ends of the first cleaning arm 51a is connected to the rotating shaft 30 between the first supporting arm 45a and the second supporting arm 45b, so that the first cleaning arm 51a rotates from the rotating arm 51a. The shaft 30 extends radially. The first cleaning arm 51a has a sufficient length so that the other end of the first cleaning arm 51a can reach at least the center of the first honing surface 1 〇a as shown in Fig. 8. As shown in Fig. 9, the first cleaning arm 5 1 a includes a nozzle 52 that can spray DI water and/or chemicals downward. Therefore, when the first cleaning arm 5 1 a is placed above the first honing surface 10a, the first cleaning arm 51a can be used to treat the first honing surface with DI water and/or chemicals. 〇a, in order to remove the honing fluid residue or the honing by-product on the first honing surface 10a. Similarly, one of the ends of the second cleaning arm 51b is connected to the rotating shaft 30 between the second supporting arm 45b and the third supporting arm 45c, so that the second cleaning arm 5 1 b is from the rotating shaft 3 0 extends radially. The second cleaning arm 51b has a sufficient length so that the other end of the second cleaning arm 51b can reach at least the center of the second honing surface 1 〇b as shown in Fig. 8. The second cleaning arm 51b also includes a nozzle (not shown) that can spray DI water and/or chemical like the nozzle 52 of the first cleaning arm 51a downward. Therefore, when the second cleaning arm 51b is placed above the second honing surface 10b, the second -30-200817131 cleaning arm 51b can be used to treat the water with DI water and/or chemicals. The second honing surface 10b is for removing the honing fluid residue or the honing by-product on the second honing surface l〇b.

Similarly, one of the ends of the third cleaning arm 51c is connected to the rotating shaft 30 between the third supporting arm 45c and the first supporting arm 45a, so that the third cleaning arm 5 1 c is from the rotating shaft 3 0 extends radially. The third cleaning arm 51c has a sufficient length so that the other end of the third cleaning arm 51c can reach at least the center of the third honing surface i〇c as shown in Fig. 8. The third cleaning arm 51c also includes a nozzle (not shown) that can spray DI water and/or chemical like the nozzle 52 of the first cleaning arm 51a downward. Therefore, when the third cleaning arm 51c is placed above the third honing surface 10c, the third cleaning arm 5 1 c can be used to treat the third honing with DI water and/or chemicals. Face 10c to remove the honing fluid residue or honing by-product on the third honing surface i〇c. As shown in FIG. 10, when the rotating shaft 30 is rotated, the first, second, and third honing heads 20a-20c are rotated and placed in the first, second, and The third, third and third cleaning arms 5 1 a - 5 1 c are also rotated and placed in the second, third and first respectively. The wafer loading/loading stations 15b, 15c, and 15a. Accordingly, the first, second, and third cleaning arms 51a-51c can be used to clean the individual wafer load-and-drop stations 15a-15c using fluids (e.g., DI water and/or chemicals). In other embodiments, the first, second, and third cleaning arms 51 a-51c can be coupled to a second rotating shaft (not shown) instead of being coupled to the rotating shaft 30, wherein the second rotating shaft is coupled to A second rotary and vertical drive mechanism -31· 200817131 (not shown). & The control of the rotation and vertical movement of the first rotary shaft is irrelevant to the first rotary shaft 30. As a result, the movement of the first, second, and third cleaning arms 51a-51c is independent of the movement of the first, second, and third honing heads 2a_2bc. Now, turning to FIG. 11, showing the present invention. A honing apparatus 1C of another embodiment. Figure 11 is a top view of the honing apparatus 1C. The honing apparatus 1C is similar to the honing apparatus 1A of Figs. 1 to 3. Therefore, the same component symbols used in Figures 1 through 3 will be used to indicate the phase-like components in the Figure. In the honing apparatus 1c, the second and third wafer load-and-load stations 15b and 15c of the honing apparatus 1A are replaced by first and second wafer cleaning stations 15V and 15d. The wafer cleaning stations 15b, and 15d include nozzles of sprayable fluid (eg, DI water or chemicals) such as the nozzles of the wafer loading-loading station 15' for the honing heads and the The honing heads and the wafers are cleaned while the wafers are placed on the wafer cleaning stations. As described above, the wafer load-and-load station 15a can be configured to also clean the honing heads and the wafers when they are placed on the wafer load-and-drop station 15a. Grinding head β and these wafers. Even though the honing apparatus 1C is described herein as having three honing surfaces 10a-10c, three honing heads 20a-20c, a *wafer loading-loading station 15a, and two wafer cleaning stations 15b1 and 15c The honing apparatus 1C according to various embodiments of the present invention may have different numbers of honing heads, honing surfaces, wafer loading-loading stations, and wafer cleaning stations. Typically, the honing apparatus 1C includes N honing heads, N honing surfaces, a wafer loading-loading station, and N-1 wafer cleaning stations, where N is an integer greater than one. Although not shown, the honing device may further include a cleaning arm (eg, the cleaning arms 51a-51c of the honing device 1B) to use a fluid (eg, DI water and/or chemical). The honing surfaces 10a-10c, the wafer loading-loading station 15a, and the cleaning stations 15b' and 15c' are treated to remove honing fluid residues or honing by-products.

Referring to Fig. 11, a method of processing a wafer in the honing apparatus 1C in accordance with an embodiment of the present invention will be described. The first wafer W1 to be processed is transferred and carried out to the first wafer loading-discharging station 15 5 by the wafer transfer device 50. Next, the first wafer W1 is loaded from the first wafer loading-discharging station 15a into the first honing head 20a. After being loaded into the first honing head 20a, the first honing head 20a is rotationally moved from the first wafer loading-discharging station 15a to the first honing surface l〇a The first wafer W1 is transferred from the first wafer loading-discharging station 15a to the first honing surface 10a. After the rotational movement, the honing heads 20a-20c are placed above the honing surfaces 10a-10c, respectively. After the first wafer W 1 is removed from the first wafer loading and unloading station 15a, a second wafer W2 is transferred and carried out to the first crystal by the wafer transfer device 50. Round loading - loading station 15a. Then, the first wafer W1 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the first wafer W1 on the first honing surface 10a includes rotating and pressing the first wafer W1 on the first honing surface 10a by the first honing head 20a, and rotating the first wafer W1 The first honing surface 10a and a first honing liquid are supplied to the first honing surface i〇a. After the honing process is completed, the first 'second and third honing heads 20a-20c are rotationally moved to the first cleaning station 15V, the second cleaning station 15c', and the first loading, respectively. The station 15a is carried out, whereby the first wafer W1 - 33 - 200817131 is transferred from the first honing plane 10a to the first cleaning station 15V. Next, the first honing head 15a and the first wafer W1 are cleaned at the first cleaning station 15b. At the first and second cleaning stations 15b' and 15c., the wafers are not carried out to the cleaning stations. The second wafer W2 is also loaded from the wafer loading/unloading station 15a to the third honing head 20c.

Then, the first, second, and third honing heads 20a-20c are rotationally moved to the second, third, and first honing surfaces 10b, 10c, and 10a, respectively. After the second wafer W 2 is removed from the first wafer loading and unloading station 15 a, a third wafer W3 is transferred and carried out to the first by the wafer transfer device 50. The wafer is loaded-loaded out of the station 15a. Next, the first wafer W1 is honed on the second honing surface 10b by the first honing head 20a. The honing process of the first wafer W 1 on the second honing surface 1 Ob includes rotating and pressing the first wafer on the second honing surface 10 b by the first honing head 20 a W1, rotating the second honing surface 10b and supplying a second honing liquid to the second honing surface 10b. The second wafer W2 is also honed on the first honing surface 10a by the third honing head 20c. The honing process of the second wafer W2 on the first honing surface 10a includes rotating and pressing the second wafer W2 on the first honing surface 10a by the third honing head 20c, and rotating the The first honing surface 10a and the first honing liquid are supplied to the first honing surface 10a. After completing the honing process, the first, second and third honing heads 20a-20c are respectively rotationally moved to the second cleaning station 15c', the first loading-discharging station 15a and the first Cleaning station 15V, thereby transferring the first wafer W1 from the second honing surface 10b to the second cleaning station 15c (and the second crystal-34-200817131 circle W2 from the first honing surface 10a Transfer to the first cleaning station 15V. Then, the first honing head 20a and the first wafer W1 are cleaned on the second cleaning station 15. The third cleaning unit is also cleaned on the first cleaning station 15V. The grinding head 20c and the second wafer W2 are also loaded from the wafer loading-discharging station 15a to the second honing head 20b. Then, the first and second And the third honing heads 2 0 a - 2 0c are rotationally moved to the third, first and second honing surfaces 10c, 10a and 10b, respectively.

Next, the first wafer W 1 is honed on the third honing surface 10c by the first honing head 20a. The honing process of the first wafer W 1 on the third honing surface 1 〇c includes rotating and pressing the first crystal on the third honing surface 10c by the first honing head 20a The circle W1 rotates the third honing surface 10c and supplies a third honing liquid to the third honing surface 10c. The second wafer W2 is also honed on the second honing surface 10b by the third honing head 20c. The honing process of the second wafer W2 on the second honing surface 10b includes rotating and pressing the second wafer W2 on the second honing surface 10b by the third honing head 20c, and rotating the The second honing surface 10b and the second honing liquid are supplied to the second honing surface lb. The third wafer W3 is also honed on the first honing surface 10a by the second honing head 20b. The honing process of the third wafer W3 on the first honing surface 10a includes rotating and pressing the third wafer W3 on the first honing surface 10a by the second honing head 20b, and rotating the The first honing surface 10a and the first honing liquid are supplied to the first honing surface 10a. After the completion of the honing processes, the first, second and third honing heads 20a-20c are respectively rotationally moved to the first loading-deloading station 15a, the first -35-200817131 cleaning station 15b' and the second cleaning station 15c_, thereby transferring the first wafer W1 from the third honing surface 10c to the first load-loading station 15a, and the second wafer W2 from the second The honing surface l〇b is transferred to the second cleaning station 15c1, and the third wafer W3 is transferred from the first honing surface 10a to the first cleaning station 15b.

Then, the first wafer W1 is carried out to the first load-and-load station 15a. The first honing head 20a and the first wafer W1 may be cleaned on the bi-loading-loading station 15a. Then, the first wafer W1 is removed from the first load-and-load station 15a by the wafer transfer device 50. After the first wafer W1 is removed from the first wafer loading-demounting station 15a, a fourth wafer W4 is transferred and carried out to the wafer loading by the wafer transfer device 50. - Carry out station 15a. The third honing head 20c and the two wafers W2 are cleaned on the second cleaning station 15d. The second honing head 20b and the third wafer W3 are also cleaned on the first cleaning station 15b'. The cleaning surfaces 51a-51c can be used to simultaneously clean the honing surfaces 10a-10c during the cleaning process of the wafer loading-loading station 15a, the first cleaning station 15b', and the second cleaning station 15c1. . In this continuous mode, the wafers can be processed in succession via the honing surfaces 10a-10c of the honing equipment 1C. The first set of wafers is honed on the honing surfaces 10a-l〇C using the first honing head 20a. Similarly, the second set of wafers is specifically honed on the honing surfaces 10a-10c using the third honing head 20c. Similarly, the third set of wafers is honed on the honing surfaces 10a-10c using the second honing head 20b. In one embodiment, the first set of wafers includes every third wafer from the beginning of the first wafer, and the second set of wafers includes each third from the beginning of the second -36-200817131 wafer. The wafers, and the third set of wafers, each third wafer from the beginning of the third wafer. Referring to Figures 12 through 14, a honing apparatus 1D in accordance with another embodiment of the present invention will now be described. Figures 12 and 13 are top views of the honing apparatus 1D, however, Figure 14 is a partial side view of the honing apparatus 1D. The honing device 1D is similar to the honing device 1 A of Figures 1 to 3. Therefore, the same component symbols used in Figures 1 through 3 will be used to represent the phases in Figures 1 to 14.

Like components. The honing device 1 D includes all of the components of the honing device 1 A and further includes a pivoting wafer transfer device 1 21. The pivot wafer transfer device 1 21 includes a wafer load-and-load cup 122 that is coupled to a rotating shaft 1 26 via an arm 124. The rotating shaft 1 26 is coupled to a pivoting and vertical drive mechanism 128 that controls the pivoting and vertical movement of the wafer loading-and-loading cup 122. The wafer load-load cup 122 can be similar to the wafer load-load station 15'. As shown in Figures 12 and 13, the pivoting wafer transfer device 112 operates to pivot the wafer loading-loading cup between a parking position X and a wafer transfer position. 122. Figure 12 is a top view of the honing apparatus 1D when the wafer loading-loading cup 122 is placed in the parking position X. Figure 13 is a top view of the honing apparatus 1 D when the wafer loading-loading cup 122 is placed at the wafer transfer position], the wafer transfer position Z is located at the top A wafer is loaded and loaded above the station 15a. As shown in Fig. 12, the wafer load-and-load cup 1 22 can transport wafers at the wafer transfer device 50 at the docking position. Such as 1 3 and -37-

As shown in Fig. 200817131, at the wafer transfer position Z, the wafer carrier 122 can be transferred at any of the 20a-2 0c above the wafer transfer position I. Figure 14 is a reference to the 12th part of the honing equipment 1 D when the wafer loading-loading is placed on the wafer transfer position 及 and above the honing head 20a wafer transfer position Z Figure 13 is a diagram showing a first method of processing a wafer in the honing apparatus 1D in accordance with one of the present inventions. For example, the first wafer circumference to be processed is carried out by the wafer transfer device 50 to the pivot wafer transfer device at the parking position I to load-load the cup 122. Then, as shown in Fig. 13, and the vertical drive mechanism 128 loads and unloads the wafer to the wafer transfer position Z. Then, at the wafer transfer position, the wafer of the first | pivot wafer transfer device 121 is loaded into and out of the cup of the first honing head 20a. After loading and unloading the cup-shaped first wafer W1 from the wafer, the wafer is loaded-loaded to the cup back to the parking position! To receive the next wafer. The first honing head 20a is then moved to transfer the first wafer wi from the device to the first honing surface 10a. Next, the first wafer W1 is honed at the first by the first honing head 20a. The first wafer wi in the first honing process includes rotating and pressing the first wafer W 1 by the first honing head 20a, rotating the first and supplying a first honing The liquid is applied to the first honing surface 10a. However, the person-loaded cups of the honing heads i cups 122 are placed in this view. As shown in FIG. 12 of the embodiment, the ϋ w 1 transfer and the 1 1 1 wafer are pivoted by the pivot 丨 122 to the I circle W1 from the J 122 to the object 1 2 2 to remove the f 122 pivot. Back, by rotating [wafer transfer position: grinding surface 10a - honing surface 1 0 a $ first honing surface - honing surface 1 0 a ling, the same as -38- 200817131 the honing equipment 1A The method further processes the first wafer W 1 in the honing device ID. The subsequent wafers are processed continuously in the same manner as the first wafer W1. In this continuous mode, the wafers are processed in succession through the honing surfaces 20a-20c using the honing heads 20a-20c. The wafer loading-and-loading cup 1 22 will be honed in the honing apparatus 1 D by the wafer loading position Z at the wafer transfer position Z above the first wafer loading-loading station 15a. The wafer is supplied to the first honing head 20 a, which is similar to the continuous mode of Φ processing the wafer in the honing apparatus 1 A. Referring to Figures 12 and 13, a second method of processing a wafer in the honing apparatus 1 D in accordance with an embodiment of the present invention will be described. In this method, the wafer to be processed is continuously carried out by the wafer transfer device 50 to the wafer load-and-load station 15a and in the same manner as the honing device 1A. Processing until and including the honing of the wafers on the honing surface 1 〇c. However, after the honing process on the honing surface l〇c is completed, each honed wafer is transferred to the first wafer by rotationally moving the third honing head 20c. The wafer transfer position above the station 15a is carried out. The wafer is then loaded onto the wafer loading-and-loading cup 122 of the pivoting wafer transfer device 121 at the wafer transfer position. Next, the wafer loading-loading cup 1 22 is pivoted to the parking position X, thereby transferring the wafer to the parking position X. Further, the third honing head 20c is rotationally moved back to the third wafer loading/unloading station 15c to further process the next crystal. Then, the wafer transfer device 50 is loaded from the wafer loading/unloading cup 122 at the parking position on the wafer loading-loading cup-39-200817131 1 22 Wafer. Subsequent wafers are processed continuously in the same manner. In this continuous mode, the wafers are processed in succession through the honing surfaces 20a-20c using the honing heads 20a-20c. Removing the wafer loading from the wafer honed in the honing device 1D to the wafer transfer position Z above the first wafer load-discharge station 15a from the third honing head 20c - In addition to carrying the cup 1 22, this continuous manner is similar to the continuous manner of processing the wafer in the honing apparatus 1 A. Referring to Figures 12 and 13, a third method of processing a wafer in the honing apparatus 1D in accordance with an embodiment of the present invention will be described. As shown in FIG. 12, a wafer transfer device 50 transfers and loads a first wafer W 1 to be processed to a wafer transfer device 1 2 1 at the parking position In-and-out cup 1 22 . Next, as described in FIG. 3, the wafer loading-and-loading cup 122 is pivoted to the wafer transfer position by the pivoting and vertical drive mechanism 128. Then, at the wafer transfer position, the first wafer w Γ

The wafer load-load cup 122 of the pivot wafer transfer device 121 is loaded to the first honing head 20a. After the first wafer W1 is removed from the wafer loading-loading cup 122, the wafer loading-loading cup 122 is pivoted back to the parking position to receive the next one. The wafer to be processed. The first wafer W1 is transferred from the wafer transfer position] to the first honing surface 10a by rotationally moving the first honing head 20a. Next, the first wafer W1 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the first wafer W1 on the first honing surface 10a includes rotating and pressing the first crystallization on the first honing surface 40-200817131 1 0a by the first honing head 20a The circle W1 rotates the first honing surface 1 〇a and supplies a first honing liquid to the first honing surface l〇a. After the honing process is completed, the first honing head 2A is rotationally moved to the second wafer loading/unloading station 15b. The first honing head 20a and the first wafer W1 are cleaned with DI water and/or chemicals on the second wafer loading-demounting station 15b. Then, the first honing head 20a is rotationally moved to the second honing plane 1 〇b. For this third method, since it is not necessary to upload and load the wafer at the second wafer loading-discharging station 15b, the first wafer cleaning station 15b' of the honing Φ device 1C can be substituted for the third Two wafer loading - loading station 15b. Then, the first wafer W 1 is honed on the second honing surface 10b by the first honing head 20a. The honing process of the first wafer w 1 on the second honing surface 1 0 b includes rotating and pressing the first wafer on the second honing surface 1 Ob by the first honing head 20a W 1, rotating the second honing surface 1 〇 b and supplying a second honing liquid to the second honing surface l 〇 b. After the honing process is completed, the first honing head 20a is rotationally moved to the third wafer loading-loading station 15c. The first honing head 2A and the first wafer wi are cleaned by DI water and/or chemicals on the third wafer loading-demounting station 15c. Then, the first honing head 2A is rotationally moved to the table honing surface 10c. In the method of sealing the table 2, since it is not necessary to upload and load the wafer at the third wafer loading-discharging station 15c, the second wafer cleaning station 15c of the honing device 1C can replace the first The three wafer loading-loading station 1 5 c splicer, by the first honing head 2 (^ grinding the first wafer W1 on the third honing surface 1〇〇硏-41-200817131. The honing process of the first wafer W1 on the third honing surface 10c includes rotating and pressing the first wafer on the third honing surface l 〇c by the first honing head 20a W1, rotating the third honing surface 10c and supplying a third honing liquid to the third honing surface 10c. After completing the honing process, the first honing head 20a is rotated by rotation The first wafer W1 is transferred to the wafer load-loading station 15a. Then, the first wafer W1 is loaded from the first honing head 20a to the first wafer loading. Carrying out the station 15a. The first wafer W1 is removed from the Φ first wafer loading-discharging station 15a by the wafer transfer device 50. One of the honing heads 20a-20 is used in turn. Continuously in the same manner as the first wafer W1 Subsequent processing of the wafer. Therefore, the grinding head WH 20c process the next wafers.

In this continuous mode, a particular honing head is used for each wafer to process the wafers in succession through the honing surfaces 10a-10c. This continuous mode is similar to processing the wafer in the honing apparatus 1D according to the first method, except that the wafer honed in the honing apparatus 1D is processed by a dedicated honing head in this third method. The continuous way. The first set of wafers is honed on the honing surfaces 10a-10c using the first honing head 20a. Similarly, the second set of wafers is honed on the honing surfaces 10a-10c using the third honing head 20c. Similarly, the third set of wafers is honed on the honing surfaces 10a-10c using the second honing head 20b. In one embodiment, the first set of wafers includes every third wafer from the beginning of the first wafer, and the second set of wafers includes each third wafer from the beginning of the second wafer. And the third set of wafers includes each second wafer from the beginning of the first day. - 42- 200817131 Referring to Figures 12 and 13, a fourth method of processing a wafer in the honing apparatus 1D in accordance with one embodiment is described. The first wafer W1 to be processed is transferred and carried out to the first wafer load-and-load station 15a by the wafer transfer device 50. Then, the first wafer W1 is loaded from the first wafer loading/unloading station 15a to the first honing head 20a. After loading into the first honing head 20a, the first honing head 20a is rotationally moved from the first wafer loading-loading station 15a to the first honing surface l〇a. The first wafer W1 is transferred from the first wafer loading-discharging station 15a to the first honing plane l〇a.

Next, the first wafer W1 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the first wafer W1 on the first honing surface 10a includes rotating and pressing the first wafer W1 on the first honing surface 10a by the first honing head 20a, and rotating the first wafer W1. The first honing surface l〇a and a first honing liquid are supplied to the first honing surface 1 〇a. Then, the first wafer W1 is processed in the same manner as the processing wafer in the honing apparatus 1 D up to and including the honing process on the third honing surface 10c. After the honing process is completed on the honing surface 10c, the first honing head 20a is rotationally moved to a wafer transfer position Z above the first wafer loading-discharging station 15a. The wafer is also pivoted to load-load the cup 122 to the wafer transfer position Z. Then, the first wafer W1 is carried from the first honing head 20a to the wafer loading-and-loading cup 122 at the wafer transfer position. After loading the first wafer W1 to the wafer loading-and-loading cup 1 22, pivoting the wafer to load-load the cup 1 22 to the parking position St. The wafer transfer device 50 loads and discharges the cup 122 from the wafer to remove the first wafer W1. The transport uses one of the honing heads 20a-20c -43-200817131 to process subsequent wafers in the same manner as the first wafer w1. In this continuous mode, a particular honing head is used for each wafer to process the wafers in succession through the honing surfaces 10a-10c. This continuous mode is similar to the continuous manner of processing wafers in the honing apparatus 1 D in accordance with the second method, except that the wafer honed in the honing apparatus 1 D is processed by a dedicated honing head. Turning now to Figures 15 through 17, a honing apparatus 1E in accordance with another embodiment of the present invention is shown. Figures 15 and 16 show the Φ view above the honing device 1 E, whereas Figure 17 is a partial side view of the honing device 1E. This honing apparatus 1E is similar to the honing apparatus 1A of Figs. 1 to 3. The components used in Figures 1 through 3 will be used to indicate similar elements in Figures 15-17. The honing apparatus 1 E includes all of the elements of the honing apparatus 1 A and further includes honing head pivoting mechanisms 27a-27c and pivoting arms 47a-47c as described below that allow the honing heads 20a- 20c is pivoted independently. As shown in Figures 15 and 16, the honing head pivoting mechanisms 27a-27c are part of a rotating assembly 12E.

As shown in Figures 15 and 16, the honing head pivoting mechanisms 27a-27c are coupled to the support arms 45a-45c, respectively, and are also coupled to the pivot arms 47a-47c, respectively. The pivoting arms 47a-47c are coupled to the rotary and vertical drive mechanisms 25a-25c, respectively, which are coupled to their individual honing heads 20a-20c. Therefore, as shown in FIG. 17, in addition to rotating the honing heads 20a-20c around the rotation axis 36 by the center rotation and vertical drive mechanism 35, the honing heads can be pivoted by the honing heads. The mechanisms 27a-27c independently pivot the pivot arms 47a-47c to independently pivot the honing heads 20a-20c about the pivot-44-200817131 rotational axes 48a-48c, respectively.

Referring to Fig. 15, a method of processing a wafer in the honing apparatus 1 E according to an embodiment of the present invention will be described. Figure 15 shows that the first honing head pivoting mechanism 27a is placed between the first wafer loading-discharging station 15a and the first honing surface 10a, the second honing head a pivoting mechanism 27b is disposed between the second wafer loading-and-loading station 15b and the second honing surface lb and the third honing head pivoting mechanism 27c is placed in the third crystal The circular loading-loading device 1 E between the station 15c and the third honing surface 1 〇c. In some embodiments, the first and second cleaning stations 15b, and 15c1 of the honing device 1C may be substituted for the second and third wafer load-and-load stations 15b and 15c, respectively. In the position shown in Fig. 15, the first honing head pivoting mechanism 27a box pivots the first honing head 20a in a curved direction 4 centering on the pivot axis 483. The first honing head 20a is transferred from the first wafer loading-loading station 15a to the first honing plane 10a without rotating the rotating shaft 30 around the rotation axis 36. Similarly, the second honing head pivoting mechanism 27b can pivot the second honing head 20b from the second honing head 20b by pivoting about the pivot axis 48b in a curved direction. The two wafer loading-loading station 15b is transferred to the second honing plane l〇b without rotating the rotating shaft 3〇 around the rotation axis '36. Similarly, the third honing head pivoting mechanism 27c can pivot the third honing head 20c from the first honing head 20c by pivoting the pivot axis 48c along a curved direction f. The three wafer loading-loading station 15c is transferred to the third honing surface 10c without rotating the rotating shaft 30 about the rotation axis 36. Thus, the honing heads 20a-20c can be allowed to move from their individual wafer-45-200817131 load-loading stations 15a-15c to the adjacent honing surfaces 10a-10c, respectively, so that Grinding heads 20a-20c - ready to start the honing process on their individual honing surfaces when ready. In some embodiments, each wafer may be processed in the honing apparatus 1 E using the honing heads 20a-20b in a manner similar to that described above with respect to the honing apparatus 1A. In other embodiments, each wafer may be processed in the honing apparatus 1E using one of the honing heads 20a-2Ob in a manner similar to that described above with respect to the honing apparatus 1C.

Referring to Fig. 16, another method of processing a wafer in the honing apparatus 1E according to an embodiment of the present invention will be described. Figure 16 shows that the first honing head pivoting mechanism 27a is placed between the first honing surface 10a and the second wafer loading-loading station 15b, the second honing head pivoting mechanism 27b is placed between the second honing surface 10b and the third wafer loading-loading station 15c and the third honing head pivoting mechanism 27c is placed on the third honing surface l〇c The honing device 1E with the first wafer loading-loading station 15a. As previously described, in some embodiments, the first and second cleaning stations 15b' and 15cf of the honing device 1C can be substituted for the second and third wafer load-and-load stations 15b and 15c, respectively. In the position shown in Fig. 16, the first honing head pivoting mechanism 27a can pivot the first honing head 20a in a curved direction centering on the pivot axis 48a. The grinding head 20a is transferred from the first honing surface 10a to the second wafer loading-discharging station 15b without rotating the rotating shaft 30 around the rotation axis 36. Similarly, the second honing head pivoting mechanism 27b can rotate the second boring head 20b by rotating the pivot axis 48b along a 'curve direction' dad pivot-46-200817131. The grinding head 20b is transferred from the second honing surface 10b to the third wafer loading-loading station 15c without rotating the rotating shaft 30 about the rotation axis 36. Similarly, the third honing head pivoting mechanism 27c can pivot the third honing head 20c from the first honing head 20c by pivoting the pivot axis 48c along a curved direction f. The three-face grinding surface 10c is transferred to the first wafer loading-loading station 15a without rotating the rotating shaft 30 around the rotation axis 36.

Therefore, the honing heads 20a-20c can be allowed to be moved from their individual honing surfaces 10a-lOc to the adjacent wafer load-and-load stations 15a-15c, respectively, so as to be honed at the same time. Upon completion of the honing processes, the loading or cleaning processes can be initiated immediately at the individual wafer loading-loading stations. In some embodiments, each wafer may be processed in the honing apparatus 1E using the honing heads 20a-2 Ob in a manner similar to that described above with respect to the honing apparatus 1A. In other embodiments, each wafer may be processed in the honing apparatus 1 E using one of the honing heads 20a-20b in a manner similar to that described above with respect to the honing apparatus 1C. Turning now to Fig. 18, there is shown a honing apparatus 1F in accordance with another embodiment of the present invention. The honing apparatus 1F includes certain elements of the honing apparatus 1A of Figs. 1 to 3. Therefore, the similar elements in Fig. 18 will be denoted by the component symbols used in Figs. 1 to 3. As shown in Fig. 18, the honing apparatus 1F includes two honing surfaces 10a and 1b, two honing heads 20a and 20b, and two wafer loading-discharging stations 15a and 15b. The honing heads 20a and 20b are part of a rotating assembly 12F comprising only two support arms 45a and 45b and two rotary and vertical drive mechanisms 25a-47-200817131 and 25b, wherein The support arms 45a and 45b are attached to the rotary shaft 30, and the rotary and vertical drive mechanisms 25a and 25b are coupled to the honing heads 20a and 20b, respectively. Therefore, when the rotary shaft 30 is rotated, the honing heads 20a and 20b are uniformly rotated.

In this embodiment, the honing faces 10a and 10b are aligned along the X axis with the axis of rotation 36 of the rotating assembly 1 2F. As an example, as shown in Fig. 18, the honing faces l〇a and 10b are placed such that the centers of the honing faces define a line 1 la parallel to the X axis with the axis of rotation 36. Further, the wafer loading/unloading stations 15a and 15b are aligned along the Y axis with the rotation axis 36 of the rotation assembly 12. As an example, as described in FIG. 18, the wafer load-load stations 15a and 15b are placed such that the centers of the wafer load-load stations define a axis with the axis of rotation 36. A straight line 1 1 b parallel to the Y axis. Therefore, the lines 1 1 a and 1 1 b are perpendicular to each other. That is, the angle α between the lines 1 1 a and 1 1 b is 90 degrees. In an alternate embodiment, the wafer load-and-load stations 15a and 15b are placed as described in FIG. 9 such that the wafer load-and-load stations are defined by the axis of rotation 36. Line 1 lb is not parallel to the Y axis. Thus, in this alternative embodiment, the angle a between the lines 11a and lib is greater than 90 degrees. The configuration of the wafer loading-loading stations 15a and 15b reduces the coverage of the Y axis of the honing equipment 1F. The honing apparatus 1A of Fig. 1 has three honing faces 10a-10c, three honing heads 2〇a-20c, and three wafer loading-loading stations 15a-15c. The honing apparatus 1F of the 18th drawing has two honing surfaces l〇a and lb, two honing heads 20a and 20b, and two wafer loading and unloading stations -48-200817131 15a and 15b . However, the honing apparatus 硏 and the honing apparatus IF according to various embodiments of the present invention may have different numbers of honing heads, honing surfaces, and wafer loading-loading stations. Typically, the honing equipment 1A and 1F may include N honing heads (connected to a rotating shaft), N honing surfaces, and N wafer loading-loading stations, where N is an integer greater than one. The N honing faces can be equally spaced from each other around the rotating shaft. The N wafer load-loading stations can be equally spaced from each other around the rotating shaft. Referring to Figures 18 and 19, a method of processing a wafer in the honing apparatus IF in accordance with an embodiment of the present invention will be described. In this embodiment, the rotating assembly 12F is configured to rotationally move the honing heads 20a and 20b so as to be loadable-loading station 15a at the first wafer, the first honing The first honing head 20a is specifically moved between the surface 20a and the second wafer loading-loading station 15b, and the second wafer loading-loading station 15b and the second honing surface 20b can be And moving the second honing head 20b between the first wafer loading and unloading station 15a.

Initially, the honing heads 20a and 20b are placed above the first and second wafer load-and-load stations 15a and 15b, respectively. The first wafer W1 to be processed is transferred and carried out to the first wafer loading-discharging station 15 5 by the wafer transfer device 50. Then, the first wafer W 1 is loaded from the first wafer loading/unloading station 15a to the first honing head 20a. After the first wafer W1 is loaded into the first honing head 20a, the first honing head 20a is rotated from the first wafer loading-loading station 15a to the first honing surface. L〇a transfers the first wafer W1 from the first wafer loading-discharging station 15a to the first honing surface 10a. After this movement, as described in Figs. 18 and 19, the -49-200817131 honing heads 20a and 20b are placed above the honing surfaces l〇a and i〇b, respectively. After the first wafer W1 is removed from the first wafer loading and unloading station 15a, a second wafer W 2 is transferred and carried out to the first crystal by the wafer transfer device 50. The circular loading-loading station 15a is processed in the same manner as the first wafer W1. Then, the first honing head 20a is on the first honing surface l〇a

The first wafer W1 is honed. The honing process of the first wafer W1 on the first honing surface 10a includes rotating and pressing the first wafer W1 on the first honing surface 10a by the first honing head 20a. The first honing surface 10a is rotated and a first honing liquid is supplied to the first honing surface 10a. After the honing process is completed, the first wafer W1 is rotated by moving the first honing head 20a to the second wafer loading-discharging station 15b from the first honing surface 10a. The first honing surface 1 〇a is transferred to the second wafer load-and-load station 15b. After this movement, the honing heads 20a and 20b are placed above the wafer loading and unloading stations 15b and 15a, respectively. Then, the first wafer W1 is carried out from the first honing head 20a to the second wafer loading-discharging station 15b. After the first wafer W1 is loaded, the first honing head 20a is rotationally moved back to the first wafer loading-discharging station 15a. After this movement, the honing heads 20a and 20b are placed above the wafer loading and unloading stations 15a and 15b, respectively. Next, the second wafer W2 is loaded from the wafer loading/unloading station 15a to the first honing head 20a. The first wafer w1 is also loaded from the wafer loading/loading station 15b and loaded into the second honing head 20b. Then, the first and second honing heads 20a and 20b are respectively rotationally moved to the first -50-200817131 and the second honing surfaces 10a and 10b, respectively, to the second wafer W2 and the first A wafer W 1 is transferred to the first and second honing surfaces 1 〇 a and 1 〇 b, respectively. After this movement, as described in Figures 18 and 19, the honing heads 20a and 20b are placed above the honing surfaces 10a and 10b, respectively. Then, the first honing head 20a is on the first honing surface l〇a

The second wafer W2 is honed. The honing process of the second wafer W2 on the first honing surface 10a includes rotating and pressing the second wafer W2 on the first honing surface 10a by the first honing head 20a. Rotating the first honing surface l〇a and supplying the first honing liquid to the first honing surface 10a. The first wafer W1 is also honed on the second honing surface 10b by the second honing head 20b. The honing process of the first wafer W1 on the second honing surface 10b includes rotating and pressing the first wafer W1 on the second honing surface 10b by the second honing head 20b. Rotating the second honing surface 1 〇b and supplying a second honing liquid to the second honing surface 1 〇b. After the honing processes are completed, the first and second wafers W1 and W2 are transferred to the first and second wafers by rotationally moving the first and second honing heads 20a and 20b, respectively. Load-loading stations 15a and 15b. After this movement, the honing heads 20a and 20b are placed above the wafer loading/discharging stations 15b and 15a, respectively. Next, the second wafer W2 is carried out from the first honing head 20a to the second wafer loading-demounting station 15b. The first wafer W1 is also carried from the second honing head 20b to the first wafer load-and-drop station 15a. After the first and second wafers W1 and W2 are loaded, the first and second honing heads 20a and 20b are rotationally moved back to the first and second wafers loading-loading-51. - 200817131 Stations 15a and 15b. After this movement, the honing heads 20a and 20b are placed above the wafer loading and unloading stations 15a and 15b, respectively. Next, the first wafer W 1 is removed from the first wafer loading and unloading station 15a by the wafer transfer device 50, and a third wafer is transferred by the wafer transfer device 50. W3 is transmitted and carried out to the first wafer load-delivery station 15a. The second and third wafers W2 and W3 are further processed in the honing apparatus 1F of the 18th or 19th embodiment in a continuous manner identical to the first wafer W1.

In this continuous mode, a plurality of wafers can be transferred and indirectly coupled to the honing surfaces 10a and 10b at the wafer loading and unloading stations 15a and 15b of the honing apparatus 1F. Heads 20a and 20b are used for honing. Referring to Figures 18 and 19, a method of processing a wafer in the honing apparatus 1 F in accordance with another embodiment of the present invention will now be described. In this embodiment, the rotating assembly 12F is configured to rotate the honing heads 20a and 20b so that the first and second honing heads can be loaded from the first wafer in a counterclockwise direction. The outbound 15a moves to the first honing surface 10a and the like in succession. Initially, the honing heads 20a and 20b are placed above the first and second wafer load-and-load stations 15a and 15b, respectively. A wafer to be processed, the first wafer W1, is transferred and carried out to the first wafer load-and-load station 15a by the wafer transfer device 50. Next, the first wafer W1 is loaded from the first wafer loading/unloading station 15a to the first honing head 20a. After the first wafer W1 is loaded into the first honing head 20a, the first honing head 20a is rotated from the first wafer loading-loading station 15a to the first honing surface. 1 (wherein the first wafer W 1 is transferred from the first wafer loading-discharging station 15 a to the first honing surface 10a. After the movement, as described in FIGS. 18 and 19 The -52-200817131 honing heads 20a and 20b are respectively placed above the honing surfaces l〇a and 10b. The first crystal is removed from the first wafer loading-loading station 15a. After the circle W1, a second wafer W2 is transferred and carried out by the wafer transfer device 50 to the first wafer load-and-load station 15a for processing.

Then, the first wafer W1 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the first wafer W1 on the first honing surface 10a includes rotating and pressing the first wafer W1 on the first honing surface 10a by the first honing head 20a, and rotating the first wafer W1. The first honing surface 10a and a first honing liquid are supplied to the first honing surface l〇a. After the honing process is completed, the first and second honing tips 20a and 20b are uniformly rotated to the wafer load-and-load stations 15b and 15a, respectively. Then, the first honing head 20a and the first wafer W1 are cleaned with DI water and/or a chemical on the second wafer loading-demounting station 15b. For this method, since it is not necessary to upload and load the wafer at the second wafer loading and unloading station 15b, the second wafer cleaning station 15b' of the honing device 1C can be substituted for the second crystal. Round loading - loading station 15b. Then, the second wafer W2 is loaded from the wafer loading/unloading station 15a to the second honing head 20b. Then, the one and second honing heads 20a and 20b are rotationally moved in unison to the honing surfaces 10b and 10a, respectively. After this movement, the honing heads 20a and 20b are placed above the honing surfaces 10b and 10a, respectively. Then, the first wafer W 1 is honed on the second honing surface 10b by the first honing head 20a. The honing process of the first wafer W 1 on the second honing surface 1 Ob includes rotating and pressing the first wafer W1 on the second honing surface 10b by the first honing head 20a. The second honing surface 10b-53-200817131 is rotated and a second honing liquid is supplied to the second honing surface 1 Ob. The second wafer W2 is also honed on the first honing surface 10a by the second honing head 20b. The honing process of the second wafer W2 on the first honing surface 10a includes rotating and pressing the second wafer W2 on the first honing surface 10a by the second honing head 20b, and rotating the The first honing surface 10a and the first honing liquid are supplied to the first honing surface l〇a.

After the honing processes are completed, the first and second wafers W1 and W2 are respectively transferred to the first and second wafers by uniformly rotating the first and second honing heads 20a and 20b. Load-loading stations 15a and 15b. After the movement, the honing heads 20a and 201 are placed above the wafer loading and unloading stations 15a and 15b, respectively. Then, the second wafer loading and unloading station 15b cleans the second honing head 20b and the second wafer W2 with DI water and/or chemicals. At the same time, the first wafer W1 is carried out from the first honing head 20a to the first wafer loading-discharging station 15a. Next, the first and second honing heads 20a and 20b are rotationally moved to the first and second honing surfaces 10a and 10b, respectively. After the movement, as shown in Figs. 18 and 19, the honing heads 20a and 20b are placed above the first and second honing surfaces 10a and 10b, respectively. After the first wafer loading/unloading station 15a is removed from the first honing head 20a, the first wafer is removed from the first wafer loading-discharging station 15a by the wafer transfer device 50. The circle W1 and the third wafer W3 are transferred and carried out to the first wafer load-and-load station i5a by the wafer transfer device 50. The second and third wafers W2 and W3 are further processed in the honing apparatus 1F of the 18th or 19th embodiment in a continuous manner with the first wafer W1. •54-

200817131 In this continuous mode, a particular honing is used for each wafer, and the wafers are processed in succession through the honing planes 1 〇a and 1 Ob. Also in this embodiment, the exclusive honing head is rounded in the honing apparatus 1F. In some embodiments, the rotation assembly 1 2F of the honing apparatus 1 F includes one or more arms (not shown) like the cleaning arms 51a-51c of the honing apparatus 1B to be at the axis of rotation 36 When the center rotates the rotation 12F, the 硏l〇a and 10b and the wafer loading and unloading stations 15a and 15b are treated with a fluid such as DI water and/or a chemical to remove liquid residue or cockroaches. Grinding by-products. As an example: the honing device 1 F-turn assembly 1 2F may include two cleaning arms (not shown) that are attached to the rotating shaft 30 to enable the honing heads 20a and 20b to When the 1 1 a is in a straight line, the two cleaning arms are collided with the line 1 1 b. In some embodiments, the wafer cleaning station can be used (for example, the wafer cleaning station of the device 1C is 15V and 15 c J). Instead of the honing equipment wafer loading-loading station 15b, in these embodiments, each circle is processed in the honing apparatus 1F by a dedicated head (the honing head 20a or 20b). Since each wafer on the first two honing surfaces 10a and 10b is continuously honed using the same honing head, each is not carried out to the wafer station 15b. In these embodiments, When one of the honing heads is rotationally moved over the wafer station 15b, the wafer station is used to clean the honing heads 20a and 20b and the circle held by the honing heads

In some embodiments, the honing apparatus 1F rotates the assembly 1 2F head, i.e., the crystallizing can clean the assembly of the grinding surface and the spinning arm with the [line.硏 1F honing a crystal and the first wafer 该 15b crystal can be -55- 200817131 and the place j, the head is dedicated to the installation: the: grinding: out - loaded 一 round a loaded L connected t prepared 1 ~ ^ 备U牛 20a 20 a configured as a honing head pivoting mechanism and pivoting arm (not shown) including honing head pivoting mechanisms 27a-27c pivoting arms 47a-47c of the honing apparatus 1E As described in Figures 15 to 17, the honing heads of the honing heads 20a-20c can be independently pivoted about a pivot axis. In these embodiments, the two honing stones 20a and 20b may be used in a manner similar to one of the above-described processing methods or one of the honing heads may be used as one of the honing heads in each of the wafers. The wafer is processed in a grinding device 1 F.

In some embodiments, the honing apparatus 1 F may further include a pivoting wafer transfer device (not shown) such as the pivoting wafer transfer device 1 1 1 of the honing device 1 D to load the wafer The wafers are carried out to the honing heads 20a and 20b or from the honing heads on the home wafer loading-loading station 15a. Therefore, the pivoting wafer transfer device of the crucible device 1F is placed close to the wafer loading-page station 15a so that the pivoting wafer transfer device can be pivoted to the wafer loading and unloading station 1 5 a The pivot wafer transfer device can also be pivoted away from the |load-loading station 15a. Similar to the pivoting wafer transfer of the honing device 1D | 1 1 1 , the pivoting wafer transfer device of the honing device 1 F can be used to receive the wafer to be honed in the honing device 1 F Or receive the wafer that has been honed in the honing | 1 F. Turning now to Fig. 20, there is shown a honing apparatus 1G in accordance with another embodiment of the present invention. The honing apparatus 1G includes certain elements of the honing gel 1A of Figures 1 to 3. Therefore, the same elements as those used in Figs. 1 to 3 will be used to denote similar elements in Fig. 20. As shown in Fig. 20, the honing apparatus 1G includes two honing surfaces i〇a and i〇b, two honing heads and 2Ob, and three wafer loading-loading stations 15a-15c. The honing heads -56-200817131 and 20b are part of a rotating assembly 1G, the rotating assembly 1G comprising only two support arms 45a and 45b and two rotary and vertical drive mechanisms 25a and 25b, wherein The two support arms 45a and 45b are attached to the rotary shaft 30, and the two rotary and vertical drive mechanisms 25a and 25b are coupled to the honing heads 20a and 20b, respectively. Therefore, when the rotary shaft 30 is rotated, the honing heads 20a and 20b are rotationally moved in unison. The first honing surface 10a is placed between the first and second wafer load-and-load stations 15a and 15b. The second honing surface 10b is placed between the second Φ and third wafer load-and-load stations 15b and 15c. The wafer transfer device 50 is located adjacent to the first and third wafer load-and-load stations 15a and 15c to enter the two wafer load-and-load stations 15a and 15x. In some embodiments, the first honing is specifically rotated between the first wafer loading and unloading station 15a, the first honing plane 10a, and the second wafer loading-loading station 15b. Head 20a. Similarly, the second honing head 20b is specifically rotated between the second wafer loading/unloading station 15b, the second honing plane lb, and the third wafer loading/unloading station 15c. The wafer transfer apparatus 50 operates to supply the wafer to be honed to the first wafer load-and-load station 15a and to remove the honed wafer from the third wafer load-loading station 15c. Referring to Fig. 20, a method of processing a wafer in the honing apparatus 1G according to an embodiment of the present invention will be described. Initially, as shown in Fig. 20, the honing heads 20a and 2Bb are placed on the first and second wafer loading/unloading stations 15a and 15b, respectively. A first wafer W1 to be processed is transferred and carried out to the first wafer load-and-drop station 15a by the wafer transfer device 50. Then, the first wafer W1 is loaded from the first wafer loading/unloading station-57·200817131 15a to the first honing head 20a and by loading-loading from the first wafer. The station 15a rotationally moves the first honing head 20a to the first honing surface 10a to transfer the first wafer W1 from the first wafer loading-discharging station 15a to the first honing surface . After this movement, the honing heads 20a and 20b are placed above the honing surfaces l〇a and 10b, respectively. After the first wafer W1 is removed from the first wafer loading and unloading station 15a, a second wafer W2 is transferred and carried out to the first wafer by the wafer transfer device 50. - Carry out the station 1 5 a.

Then, the first wafer W1 is honed on the first honing surface 10a by the first honing head 20a. The honing process of the first wafer W1 on the first honing surface 10a includes rotating and pressing the first wafer W1 on the first honing surface 10a by the first honing head 20a, and rotating the first wafer W1. The first honing surface 10a and a first honing liquid are supplied to the first honing surface l〇a. After the honing process is completed, the first wafer W1 is rotated by moving the first honing head 20a to the second wafer loading-depot station 15b from the first honing surface 10a. The first honing surface 10a is transferred to the second wafer load-and-load station 15b. As a result, the honing heads 20a and 20b are placed above the wafer load-and-load stations 15b and 15c, respectively. Then, the first wafer W1 is carried out from the first honing head 20a to the second wafer loading-discharging station 15b. After the first wafer W1 is loaded, the first honing head 20a is rotationally moved back to the first wafer loading-discharging station 15a. After this movement, as shown in Fig. 20, the honing heads 20a and 20b are placed above the wafer loading/unloading stations 15a and 15b, respectively. Next, the second wafer W2 is loaded from the wafer loading/unloading station 15a to the first honing head 20a. The first wafer W1 is also loaded from the wafer loading-discharging station 15b to the second honing head 20b. Then, the first and second honing heads 20a and 20b are respectively rotationally moved to the first and second honing surfaces l〇a and lb, respectively, to rotate the first and second wafers W1. And W2 are respectively transmitted to the second and first honing surfaces 1 Ob and 1 〇 a. After this movement, the honing heads 20a and 20b are placed above the honing surfaces 1a and 10b, respectively. After the second wafer W2 is removed from the first wafer loading-demounting station 15a, a second wafer W3 is transferred and loaded onto the first wafer by the wafer transfer device 50. Load-load station 15a. Then, the second wafer W2 is honed on the first honing surface i〇a by the first honing head 20a. The honing process of the second wafer W2 on the first honing surface 10a includes rotating and pressing the second wafer W2 on the first honing surface 10a by the first honing head 20a. Rotating the first honing surface 10a and supplying the first honing liquid to the first honing surface l〇a.

The first wafer W1 is also honed on the second honing surface i 〇 b by the second honing head 20b. The honing process of the first wafer W1 on the second honing surface 10b includes rotating and pressing the first wafer W1 on the second honing surface 10b by the second honing head 20b. Rotating the second honing surface 1 〇 b and supplying a second honing liquid to the second honing surface 1 Ob ◦ after completing the honing process, by rotating the first and second 硏Grinding heads 20a and 20b to the second and third wafer loading and unloading stations 15b and 15c, respectively, to transfer the second wafer W2 and the first wafer W1 to the second and third wafers, respectively Load-load stations 1 5 b and 1 5 c. After the rotational movement, the first and second honing heads 20a and 2b are placed above the wafer loading/unloading stations 15b and 15c, respectively. Next, the second wafer W2 is loaded from the first honing head 20a to the second wafer loading-discharging station 15b. The first wafer w 1 is also carried from the honing head 20b to the second wafer load-and-drop station i5c. After the second wafers W1 and W2 are loaded, the first and second 20a and 20b are rotationally moved back to the first and second crystal substrates 15a and 15b, respectively. After this movement, as shown in Fig. 20, the grinding heads 20a and 20b are placed above the wafer loading/unloading stations Φ 15b, respectively.

200817131 Then, the third wafer W3 is loaded from the first wafer loading-loading technique to the first honing head 20a. The second wafer W2 is also loaded from the circular load-and-load station 15b to the second honing head 20b. The circle W 1 is removed from the third wafer loading-discharging station 15c by the transfer device 50. Next, the second and third wafers W2 and W3 are further processed in the preparation 1G in a continuous manner similar to the first wafer. In this continuous mode, the honing surfaces 1a and 1b of the honing apparatus 1G are processed successively using the honing heads 20a and 20b, and the plurality of crystals are successively turned to the 21st, showing another according to the present invention. The honing device 1H is implemented. The honing apparatus 1H includes certain elements of 硏 1A of Figures 1 to 3. Therefore, the similar elements used in Fig. 21 will be denoted by the phase symbols used in Figs. The honing apparatus 1H as shown in Fig. 2 includes three honing faces l〇a-l〇c, three honing heads and four wafer loading-loading stations 15a-15d. Therefore, the honing device 4 includes the additional wafer carrying 'in-out station 1 5 d. The wafers are loaded and unloaded to the second first honing head B to load - the 硏 1 5 a and ί station 15a the first crystal of the wafer, the first crystal honing through the 3 circles. For example, a 20A-20c i 1H package out station-60-200817131 1 5a-15d is placed around the axis of rotation 36 to center the wafer with the axis of rotation. The load-loading stations are equally spaced from one another. The honing surface 10a is placed between the first and second wafer load-and-load stations 15a and 15b. Similarly, the honing surface 1 〇 b is placed between the second and third wafer loading and unloading stations 15b and 15c, and the honing surface 10c is placed in the third and fourth Wafer loading - between the stations 15c and 15d.

In this embodiment, the honing heads 20a-20c (portions of the rotating assembly 12H) are mounted to the rotating shaft 30 such that the honing heads are not equally spaced from one another about the axis of rotation 36. . Moreover, the honing heads 20a-20c are mounted to the rotating shaft 30 so that the honing heads 20a-20c can be placed above the honing surfaces 10a-lOc, respectively, or placed thereon. The wafer loading-loading three of the wafers 15a-15d are loaded-loaded above the station. In this embodiment, the support arms 45 a-45c, the wafer loading and unloading stations 15a-15d and the honing surfaces 10a-10c are disposed so that (1) can be in the first wafer Loading and unloading station 15a, the first honing surface l〇a and the second wafer loading-loading station 15b exclusively move the first honing head 20a; (2) can be in the second crystal a circular loading-loading station 15b, the second honing surface 10b, and the third wafer loading-loading station 15c exclusively moving the second honing head 20b; and (3) The third honing head 20c is specifically moved between the three wafer loading-loading station 15c, the third honing surface 10c, and the fourth wafer loading-loading station 15d. Referring to Fig. 21, a method of processing a wafer in the honing apparatus 1H according to an embodiment of the present invention will be described. Initially, as shown in Fig. 21, the honing heads 20a-20c are placed in the first, second and third wafer loading/unloading stations 15a-15c, respectively. Transferring and discharging a to-be-processed -61-200817131 first wafer W1 to the first wafer by the wafer transfer device 50 to load-load the first wafer W1 from the first crystal Circular loading-loading station 15a: first honing head 20a and moving the first honing head 20a to the first honing surface l〇a by loading-loading station from the first wafer The wafer W1 is transferred from the first wafer loading-discharging station 15a to the face 10a. After this movement, the honing heads 20a-20c are respectively honed above the honing faces 10a-l〇C. After loading and unloading the first wafer W1 from the first wafer, the wafer transfer device 50 Φ wafer W2 is transferred and carried out to the first wafer load-and-load station 1 In the same manner as in the honing apparatus 1A, the wafers W1 and W2 and subsequent wafers are treated in the honing apparatus 1H up to and including the honing on the honing surface 10c. However, the honing process on the honing surface 10c rotationally moves the third honing head 20c to transfer the honed first to the fourth wafer loading-discharging station 15d. Then, the W1 is carried out from the third honing head 20c to the fourth wafer carrier, and then the wafer transfer device 50 removes the first from the first-input-out station 15d. Wafer. The wafer is continuously continued in the same manner. In this continuous mode, the wafers are processed successively through the grinding faces 10a-10c using the honing heads 20a-20c. In addition to moving the wafer honed in the honing equipment 1H from the third to the fourth wafer loading-loading station 15d before being transferred by the wafer, the continuum is in the 方A continuous manner of processing wafers in the grinding apparatus 1 A. Station 15a. Loading to the 1 5 a rotation placing the first first 硏 grinding at the outbound 1 5 a will be a second 5 a. After further processing the wafers, the wafers W1 are processed by the first wafer loading station and the four wafers are processed by the transfer device 50. The dry grinding head 20c is similar to -62· 200817131. Figure for the flow chart depicting the use of a honing device (e.g., the honing device 1A, 1B, 1C, in accordance with an embodiment of the present invention)

I ID or 1E) A method of honing semiconductor wafers. In block 2202, a semiconductor wafer is transferred between a first wafer station of the honing apparatus and one of the first, second, and third honing heads of one of the honing apparatus rotating assemblies. The first wafer station is a wafer loading-loading station. At a block 2204, at least one of the first, second, and third honing heads of the rotating assembly is continuously smashed on the first, second, and third honing surfaces of the honing apparatus Grind the half ^ conductor wafer. In block 2206, the semiconductor wafer is continuously transferred to the second and third wafers of the honing apparatus using at least one of the first, second, and third honing heads of the rotating assembly. station. Each of the first, second, and third wafer stations is placed between adjacent honing surfaces of the first, second, and third honing surfaces. Referring to the flowchart of FIG. 2, another embodiment in accordance with the present invention will be described.

A method for honing a semiconductor wafer using a honing device (e.g., the honing device 1F). In block 2302, a semiconductor wafer is transferred between one of the first wafer loading and unloading stations of the honing apparatus and one of the first and second honing heads of the rotating assembly of the honing apparatus. . In block 2304, the semiconductor wafer is continuously honed on the first and second honing surfaces of the honing apparatus using at least one of the first and second honing heads of the rotating assembly. After the semiconductor wafer is honed on the first honing surface in block 2306, the semiconductor wafer is transferred to the semiconductor wafer using at least one of the first and second honing heads of the rotating assembly. A second wafer loading-loading station of the honing device includes loading the semiconductor wafer to the second wafer loading-loading station. -63- 200817131 Each of the first and second wafer stations is placed between the first and second honing surfaces. Referring to the flow chart of Fig. 24, a method for honing a semiconductor wafer using a honing device (e.g., the honing device 1 F) in accordance with another embodiment of the present invention will be described. In block 2402, a semiconductor wafer is transferred between one of the first wafer station of the honing apparatus and one of the first and second honing heads of the rotating assembly of the honing apparatus. The first wafer station is a wafer load-load station. At a block 2404, the semiconductor wafer is continuously honed on the first and second honing surfaces of the honing apparatus using at least one of the first and second honing heads 0 of the rotating assembly . The first and second honing surfaces are placed about an axis of rotation such that the centers of the first and second honing surfaces define a first line with the axis of rotation. In block 2406, after the semiconductor wafer is honed on the first honing surface, the semiconductor wafer is transferred to the semiconductor wafer using at least one of the first and second honing heads of the rotating assembly. One of the second wafer stations of the honing equipment. Positioning the first and second wafer stations around the axis of rotation and between the first and second honing surfaces such that each of the first and second wafer stations is placed A second straight line is defined between the first and second honing surfaces and the center of the brother and the wafer station and the axis of rotation. The first and second wafer stations are disposed relative to the first and second honing surfaces such that the first line is not perpendicular to the second line. Referring to the flow chart of Fig. 25, a method for honing a semiconductor wafer using a honing apparatus (e.g., the honing apparatus 1 依据) according to another embodiment of the present invention will be described. In block 2502, a semiconductor wafer is transferred to a first wafer station of the honing device using a wafer transfer device. The first crystal • 64- 200817131 round station is a wafer loading-loading station. In block 2504, the semiconductor wafer is continuously transferred to the first, second, and third of the honing apparatus using the first, second, and third honing heads of one of the honing equipment rotation assemblies, respectively. Honing face. At a block 2506, the first, second, and third honing heads of the rotating assembly are used to continuously honing the semiconductor wafer on the first, second, and third honing surfaces of the honing apparatus. In block 2508, the spin is used separately

The first, second and third honing heads of the transfer assembly continuously transport the semiconductor wafer to the second, third and fourth wafer stations of the honing apparatus. The first wafer station is placed between the fourth wafer station and the first honing surface. The second wafer station is placed between the first and second honing surfaces. The third wafer station is placed between the second and third honing surfaces. The fourth wafer station is placed between the third honing surface and the first wafer station. In block 251, the wafer transfer device is used to remove the semiconductor wafer from the fourth wafer station of the honing device. The fourth wafer station is another wafer loading-loading station. Referring to the flowchart of Fig. 26, a method for honing a semiconductor wafer using a honing device (e.g., the honing device 1G) according to another embodiment of the present invention will be described. In block 2602, a wafer transfer device is used to transfer a semiconductor wafer to a first wafer station of the honing device. The first wafer station is a wafer loading-loading station. In block 2604, the semiconductor wafers are continuously conveyed to the first and second honing surfaces of the honing apparatus using the first and second honing heads of one of the honing apparatus rotation assemblies. In block 2606, the semiconductor wafer is continuously honed on the first and second honing surfaces of the honing apparatus using the first and second honing heads of the rotating assembly, respectively. In block 2608, the semiconductor wafer is continuously transferred to the second and third wafer stations of the honing apparatus using the first and second honing heads -65 - 200817131 of the rotating assembly, respectively. The first wafer station is placed between the third wafer station and the first honing surface. The second wafer station is placed between the first and second honing surfaces. The third wafer station is placed between the second honing surface and the first wafer station. In block 2610, the wafer transfer device is used to remove the semiconductor wafer from the third wafer station of the honing device. The third wafer station is another wafer loading-loading station. While the foregoing description illustrates exemplary embodiments of the invention and the method of operation, the invention is not limited to the specific embodiments or the methods of operation. Many details are not necessary to the practice of the invention, which are included to fully disclose the best mode of operation and the manner and process of making and using the invention. Modifications may be made to the specific forms and designs of the present invention without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top view of a honing apparatus with a honing head placed above a wafer loading-loading station in accordance with an embodiment of the present invention.

Figure 2 is a top plan view of the honing apparatus of Figure 1 when the honing heads are placed over the honing surface in accordance with one embodiment of the present invention. Figure 3 is another top view of the honing apparatus of Figure 1 when the honing heads are placed over different wafer loading-loading stations in accordance with one embodiment of the present invention. Fig. 4 is a top plan view of a wafer loading-loading station which can be used in the honing apparatus of Fig. 1 in accordance with an embodiment of the present invention. Figure 5 is a cross-sectional view of the load-loading station of Figure 4. -66- 200817131 Figures 6(a) and 6(b) are continuous cross-sectional views of the load-loading station of Figure 4 to show a wafer W loaded into a stack in accordance with an embodiment of the present invention. The order of the grinding head. Figure 7 is a top plan view of a honing system including the honing apparatus of Figure 1 in accordance with an embodiment of the present invention. Figure 8 is a top plan view of a honing apparatus having a rotatable cleaning arm with the honing head placed over the wafer loading-loading station in accordance with another embodiment of the present invention.

Figure 9 is a partial side elevational view of the honing apparatus of Figure 8. Figure 10 is another top view of the honing apparatus of Figure 8 when the honing head is placed over the honing surface. Figure 11 is a top plan view of a honing apparatus with the honing head placed above the wafer loading-loading station in accordance with another embodiment of the present invention. Figure 12 is a view of a honing apparatus having a pivoting wafer transfer device when a wafer loading-and-loading cup is placed in a parking position according to another embodiment of the present invention. view. Fig. 13 is another top view of the honing apparatus of the pivoting wafer transfer apparatus wafer loading-loading cup placed in a wafer transfer position. Figure 14 is a partial side view of the honing apparatus of Figure 12. Figure 15 is a top plan view of a honing apparatus having a pivoting mechanism for pivoting a honing head in accordance with another embodiment of the present invention. Figure 16 is another top view of the honing apparatus of Figure 15. Figure 17 is a partial side view of the honing apparatus of Figure 15. -67-

200817131 Figure 18 is a honing diagram of a faceted, two honing head and two wafer loading-loading stations in accordance with another embodiment of the present invention. Figure 19 is a 20th view of a honing apparatus for placing the wafer loading-and-loading stations according to another configuration of another embodiment of the present invention, in accordance with another embodiment of the present invention, Face, two honing heads and three wafer loading-loading stations. Figure 21 is a honing diagram of a faceted, three honing head and four wafer loading-loading stations in accordance with another embodiment of the present invention. Figure 22 is a flow chart of a method of using a body wafer in accordance with an embodiment of the present invention. Figure 23 is a flow chart showing a method of using a body wafer in accordance with another embodiment of the present invention. Figure 24 is a flow chart of a method of using a body wafer in accordance with another embodiment of the present invention. Figure 25 is a flow chart of a method of using a body wafer in accordance with another embodiment of the present invention. Figure 26 is a flow chart of a method of using a body wafer in accordance with another embodiment of the present invention. [Explanation of main component symbols] The top view of the two honing equipments is shown in different top views. The upper view with two honing equipment has a top view of three honing equipment to honing the semi-guide to honing the semi-guide to honing the semi-guide to honing the semi-guide to honing the semi-conducting 1 A honing equipment 1B honing Equipment-68- 200817131

1C Honing equipment ID Honing equipment IE Honing equipment IF Honing equipment iG Honing equipment 1H Honing equipment 1 Al Honing equipment 1 A-2 Honing equipment 10a Honing surface 10b Honing surface 10c Honing surface 11a Straight line 11b line 12 rotation assembly 12B rotation assembly 12E rotation assembly 12F rotation assembly 12G rotation assembly 12H rotation assembly 15a wafer loading-loading station 15b wafer loading-loading station 15b' first wafer Cleaning station 15c wafer loading-loading station 15c' second wafer cleaning station-69-200817131 15d wafer loading-loading station 15, wafer loading-loading station 20' honing head 20a honing Head 20 b honing head 20c honing head 25a rotary and vertical drive mechanism 25b rotary and vertical drive mechanism 25c rotary and vertical drive mechanism 27a honing head pivot mechanism 27b honing head pivot mechanism 2.7 c honing head pivot Mechanism 3 0 Rotary shaft 3 5 Center rotation and vertical drive mechanism 36 Rotation axis 4 5a Support arm 45b Support arm 4 5c Support arm 47a Pivot arm 47b Pivot arm 47c Pivot arm 48a Pivot axis 48b Pivot axis 48c Pivot axis Line-70- 20081 7131

50 0 wafer transfer device 51a first cleaning arm 51b second cleaning arm 51c third cleaning arm 5 2 nozzle 55 linear track 100 honing system 105 wafer cassette unit 110 wafer transfer device 111 user 112 user 113 user 1 14 User 115 Linear track 120 Buffer station 121 Pivot wafer transfer unit 122 Wafer loading-loading cup 124 Arm 125 Wall 126 Rotary shaft 128 Pivot and vertical drive mechanism 150 Rear CMP washer 152 Input station 153 cleaning station-71- 200817131

154 drying station 190 cup holder 195 cup 200 elevator 202 lifting piston 204 elevator pneumatic cylinder 210 wafer tray 240 first - plurality of nozzles 250 second plurality of nozzles 260 drain passage 270 first fluid passage 272 second fluid passage 280 positioning ring 285 Vacuum channel A curve direction B curve direction C curve direction W wafer W1 first wafer W2 second wafer W3 second wafer W4 fourth wafer X parking position Y wafer transfer position a angle - 72-

Claims (1)

200817131 X. Patent application scope: 1. A device for honing a semiconductor wafer, the device comprising: first, second and third honing surfaces, placed around an axis of rotation; First, second and third wafer stations are placed between the first, second and third honing surfaces around the axis of rotation for each of the first, second and third wafer stations a wafer station positioned between adjacent honing surfaces of the first, second, and third honing surfaces, the first wafer station being a wafer loading-loading station, the wafer loading-loading The outbound system is configured to receive a semiconductor wafer to carry the semiconductor wafer to the first wafer station before transferring the semiconductor wafer from the first wafer station; and a rotating assembly, including First, second and third honing heads, the rotating assembly being configured to surround the first, second and third honing surfaces with the first, second and third wafers about the axis of rotation Rotatingly moving each of the first, second and third honing heads between the stations, wherein the number of honing heads, the number of honing surfaces and the number of wafer stations included in the apparatus are identical. 2. The apparatus of claim 1, wherein the first, second, and third wafer stations are positioned about the axis of rotation such that the first, second, and third wafer stations surround each other about the axis of rotation They are equally spaced. 3. The apparatus of claim 1, wherein the first, second, and third honing surfaces are positioned about the axis of rotation such that the first, second, and third honing surfaces surround each other about the axis of rotation They are equally spaced. 4. For the equipment of claim 1 of the patent scope, wherein the second and third wafer-73-200817131 station wafer loading-loading station is configured to load and load the semiconductor wafer At least one of the first, second and third honing heads is out of the honing head. 5. The apparatus of claim 4, wherein the rotating assembly is configured to repeatedly rotate the first, second, and third honing heads about the axis of rotation to be at the first wafer station, Dedicating the first honing head between the first honing surface and the second wafer station, and rotating the second 专门 between the second wafer station, the second honing surface and the third wafer station And grinding the third honing head between the third wafer station, the third honing surface and the first wafer station. 6. The device of claim 1, wherein each of the second and third wafer stations is a wafer cleaning station configured to spray fluid to the first, second, and third A honing head is a specific honing head for cleaning the particular honing head and a semiconductor wafer held by the particular honing head. 7. The apparatus of claim 1, wherein the first, second and third honing heads are coupled to a rotating shaft for uniformly rotating the first and second rotating shafts when the rotating shaft is rotated And the third honing head. 8. The apparatus of claim 7 wherein each of the first, second and third honing heads is coupled to an individual pivoting mechanism coupled to the rotating shaft for the Each of the first and second honing heads is pivotable about an individual pivot axis that is rotated by the axis of rotation about the axis of rotation. 9. The apparatus of claim 7, wherein the rotating assembly further-74-200817131 includes the first and the first arm being rotated above the first, second and third honing surfaces, the fluid is sprayed to The first, second and third honing surfaces. The apparatus of claim 9, wherein the first, second, and third cleaning arms are attached to the rotating shaft so that the first, second, and third cleanings are performed when the rotating shaft is rotated The arm is rotated with the first ground. A third honing head 11. The apparatus of claim 1, further comprising a pivoting wafer transfer device having a wafer loading-and-loading cup, the pivoting wafer transfer device being Positioning adjacent to the first wafer station such that the wafer load-load cup can be pivoted over the first wafer station for the first, second, and third honing At least one honing head of the head transfers the semiconductor wafers between the wafer loading and unloading cups. 12. A device for honing a semiconductor wafer. The device comprises: first, second and third honing surfaces which are placed around a rotational axis and are placed at the ring winding station. 4th and 3rd, the second to the 'mill', the second side of the first and the third, the first and the second, and the other, the first station, the second line, the second axis The load is carried out by the station - the input of the round crystal three, the inter-surface grinding of the round crystal four and the first and the third, the third, the first and the second, the first station, the 2. The first head of the first mill, the third, the first and second, the first, the first and the second, the first and the second, the first and second, and the first and second, and the first and second, and the first and second, and the first and second, and the first and second, The first, second, and third honing heads are rotationally moved between the first and second honing surfaces and the first, second, third, and fourth wafer loading-loading stations Each honing head. The apparatus of claim 12, wherein the rotating assembly is configured to repeatedly rotate the first, second, and third honing heads about the axis of rotation to be in the first crystal a circular loading-loading station, the first honing surface and the second wafer loading-loading station specifically rotating the first honing head, and loading and discharging the second wafer at the second wafer The second honing surface and the third wafer loading-loading station specifically rotate the second honing head, and at the third wafer loading-loading station, the third honing surface and the first Four wafer loading-loading station specifically rotates the third honing head. 1 4 · A device for honing a semiconductor wafer, the device comprising: a brother and a younger face are placed around a rotation axis; the first and second wafer loading-loading stations, Surrounding the axis of rotation and disposed between the first and second honing surfaces such that each of the first and second wafer stations is placed between the first and second honing surfaces Each of the first and second wafer load-loading station load-loading stations is configured to receive a semiconductor wafer for loading from the first and second wafers - loading and unloading the semiconductor wafer to the first and second wafer load-and-load stations before transferring the semiconductor wafer; and rotating the assembly, including the first and second honing heads, The rotating assembly is configured to rotationally move the first and second honing heads between the at least some of the first and second honing surfaces and the first and second wafer loading-loading stations about the axis of rotation Each of the honing heads, -76- 200817131, the number of honing heads included in the equipment, the number of honing surfaces, and the number of wafer loading-loading stations Department of the same. 15. The apparatus of claim 14, wherein the first and second honing surfaces are placed around the axis of rotation such that a center of the first and second honing surfaces defines a first axis A straight line. The apparatus of claim 15, wherein the first and second wafer loading-loading stations are placed around the axis of rotation so that the first and second wafers are loaded-and-loaded. The center of the station defines a second with the axis of rotation 17. The apparatus of claim 16, wherein the first and second honing surfaces and the first and second wafer loading-loading stations are configured such that the first straight line is not perpendicular to the first Two straight lines. 1. The apparatus of claim 14, wherein the rotating assembly is configured to repeatedly rotate the first and second honing heads about the axis of rotation to load-load the first wafer The first honing surface and the second wafer loading-loading station specifically rotate the first honing head, and at the second wafer loading-loading station, the second honing surface And the first wafer loading-loading station specifically rotates the second honing head. 1. The apparatus of claim 14, wherein the first and second honing heads are coupled to a rotating shaft for uniformly rotating the first and second cymbals when the rotating shaft is rotated Grinding head. 20. The apparatus of claim 19, wherein each of the first and second honing heads is coupled to an individual pivoting mechanism coupled to the rotating shaft for the first and the Each of the honing heads of the second honing head can be pivoted about an individual pivot axis that is rotated about the axis of rotation about the axis of rotation. The apparatus of claim 19, wherein the rotating assembly further comprises first and second cleaning arms having nozzles that are rotated above the first and second honing surfaces At the time, the fluid is sprayed onto the first and second honing surfaces. 22. The apparatus of claim 21, wherein the first and second cleaning arms are mounted to the rotating shaft such that the first and second cleaning arms are coupled to the first and second when rotating the rotating shaft The second honing head is rotated in unison. 2. The apparatus of claim 14, further comprising a pivoting wafer transfer device having a wafer loading-and-loading cup, the pivoting wafer transfer device being placed adjacent to the first a wafer loading-loading station such that the wafer loading-loading cup can be pivoted over the first wafer loading-loading station for the first and second At least one honing head of the honing head transfers the semiconductor wafers between the wafer loading and unloading cups. 24. An apparatus for honing a semiconductor wafer, the apparatus comprising: first and second honing surfaces disposed about an axis of rotation for centering the first and second honing surfaces The axis of rotation defines a first line; the first and second wafer stations are disposed about the axis of rotation between the first and second honing surfaces for each of the first and second wafer stations a wafer station disposed between the first and second honing surfaces and a center of the first and second wafer stations defining a second line with respect to the axis of rotation relative to the first and second honing Configuring the first and second wafer stations to have a first straight line that is not perpendicular to the second line from -78 to 200817131; and a rotating assembly including first and second honing heads, the rotating assembly Arranging to rotationally move each of the first and second honing heads between at least some of the first and second honing surfaces and the first and second wafer stations about the axis of rotation, wherein The number of honing heads included in the equipment, the number of honing surfaces and the number of wafer stations are the same25 · The equipment of claim 24, wherein the second wafer station system A wafer load-load station is configured to load and load the semiconductor wafers to at least one of the first and second honing heads. The apparatus of claim 24, wherein the rotating assembly is configured to repeatedly rotate the first and second honing heads about the axis of rotation to be at the first wafer station, the first 硏Rotating the first honing head between the grinding surface and the second wafer station, and specifically rotating the second honing head between the second wafer station, the second honing surface and the first wafer station . The apparatus of claim 24, wherein the second wafer station is a wafer cleaning station configured to spray fluid to a specific honing head of the first and second honing heads to clean the A specific honing head and a semiconductor wafer held by the particular honing head. 28. The apparatus of claim 24, wherein the first and second honing heads are coupled to a rotating shaft for uniformly rotating the first and second honing heads when the rotating shaft is rotated . 29. The apparatus of claim 28, wherein each of the first and second honing heads is each coupled to an individual pivot-79-200817131 rotator coupled to the rotating shaft so as to be The pivot axis pivots each of the first and second honing heads. The individual pivot axis is rotated about the axis of rotation by the axis of rotation. 30. The apparatus of claim 28, wherein the rotation assembly further comprises first and second cleaning arms, the first and second cleaning arms having nozzles for being rotated by the first cleaning arm And above the second honing surface, spraying fluid to the first and second honing surfaces. 31. The apparatus of claim 30, wherein the first and second cleaning arms are mounted to the rotating shaft such that the first and second cleaning arms are coupled to the first and second when rotating the rotating shaft The second honing head is rotated in unison. 32. The device of claim 24, further comprising a pivoting wafer transfer device having a wafer loading-and-loading cup, the pivoting wafer transfer device being placed adjacent to the first a wafer station such that the wafer loading-loading cup can be pivotally positioned over the first wafer station to at least one honing head and the crystal in the first and second honing heads The semiconductor wafers are transferred between the round loading and loading cups. 3 3. A device for honing a semiconductor wafer, the device comprising: first and second honing surfaces placed around an axis of rotation; first, second and third wafer loading a loading station disposed between the first and second honing surfaces about the axis of rotation so that the first and third load-and-load stations are placed in the first and second 硏a grinding surface and the second loading-loading station are disposed between the first and second honing surfaces; and a rotating assembly including first and second honing heads 'the rotating assembly-8 0 - 200817131 configured to rotationally move the first and second between the at least some of the first and second honing surfaces and the first, second, and third wafer load-and-drop stations about the axis of rotation Honing the head of each honing head. 34. The apparatus of claim 33, wherein the rotating assembly is configured to repeatedly rotate the first and second honing heads about the axis of rotation to load-load the station at the first wafer The first honing surface and the second wafer loading-loading station specifically rotate the first honing head, and at the second wafer loading and unloading station, the second honing surface and The third wafer loading-loading station specifically rotates the second honing head. 35. A system for honing semiconductors, a system comprising: first and second honing equipment, each of the first and second honing equipment comprising: first, second and third a honing surface disposed about an axis of rotation; first, second, and third wafer stations disposed between the first, second, and third honing surfaces about the axis of rotation so that Each of the first, second, and third wafer stations is placed between adjacent honing surfaces of the first, second, and third honing surfaces, and the first wafer station is a crystal a load-loading station configured to receive a semiconductor wafer to carry the semiconductor wafer to the first wafer station before transferring the semiconductor wafer from the first wafer station; a rotating assembly comprising first, second and third honing heads, the rotating assembly being configured to surround at least some of the first, second and third honing surfaces with the first, first Rotating ground between the second and third wafer stations -81- 200817131 moving each of the first, second and third honing heads; Transfer means being disposed adjacent the first and second grinding device WH, to enter each of the first and second WH WH wafer grinding apparatus first grinding station equipment; and a post-CMP cleaning machine is placed adjacent to the wafer transfer device such that the wafer transfer device is placed between the rear CMP washer and the first and second honing equipment, the post CMP cleaning system configuration A semiconductor wafer that has been honed in one of the first and second honing equipment and transported to the post CMP washer by the wafer transfer apparatus. 3 6 . A system for honing a semiconductor device, the system comprising: first and second honing equipment, each of the first and second honing equipment comprising: first, second and third a honing surface disposed about an axis of rotation; first, second, and third wafer stations surrounding the axis of rotation and disposed between the first, second, and third honing surfaces, So that each of the first, second, and third wafer stations is placed between adjacent honing surfaces of the first, second, and third honing surfaces, the first wafer station is a crystal a wafer loading-loading station configured to receive a semiconductor wafer to carry the semiconductor wafer before transferring the semiconductor wafer from the first wafer station To the first wafer station; and a rotating assembly comprising first, second and third honing heads, the rotating assembly being configured to surround the axis of rotation at least some of the first, second and third Rotating between the honing surface and the first, second, and third wafer stations -82- 200817131 moving each of the first, second, and third honing heads a honing head; and a wafer transfer device disposed adjacent to the first and second honing equipment to enter a first wafer station of each of the first and second honing equipment, wherein Orienting the first and second honing equipment such that the first wafer station of each of the first and second honing equipments and the first and third honing surfaces are more than the second and third The wafer station and the second honing surface are adjacent to the wafer transfer device. 37. The system of claim 36, wherein the first and third honing surfaces of the first and second honing equipment are arranged in a straight line. 3 8. A method for honing a semiconductor wafer, the method comprising: first, second and third honing of a rotating assembly of a honing device at a first wafer station of a honing device Transferring a semiconductor wafer between one of the heads, the first wafer station being a wafer loading-loading station; using at least one of the first, second, and third honing heads of the rotating assembly The head continuously honing the semiconductor wafer on the first, second, and third honing surfaces of the honing apparatus; and using at least one of the first, second, and third honing heads of the rotating assembly The grinding head continuously transports the semiconductor wafer to the second and third wafer stations of the honing device, and each of the first, second, and third wafer stations is placed at the first Between the adjacent honing surfaces of the second and third honing surfaces. 39. The method of claim 38, further comprising: when the particular honing head of the first, second, and third honing heads is placed at -83-200817131 above the second wafer station Carrying the semiconductor wafer from the specific honing head to the second wafer station; and when the different honing head is placed over the second wafer station, the semiconductor wafer is removed from the The two wafer stations are loaded into the different honing heads of the first, second and third honing heads. 40. The method of claim 38, wherein the method further comprises spraying fluid from the second wafer station to the semiconductor wafer when the semiconductor wafer is placed at the second wafer station. Φ 4 1 The method of claim 3, wherein the continuous transfer comprises rotating the first, second, and third honing heads by rotating the first, second, and The three-head grinding head rotates in unison around the axis of rotation. 42. The method of claim 4, further comprising independently pivoting the first, second, and third honing heads about a pivot axis, each pivot axis of the pivot axes being located One of the first, second and third honing heads is between the axis of rotation. 43. The method of claiming a patent, 轺 38 38, wherein the first step, the second and third cleaning arms are rotated above the first, second and third honing surfaces At this time, fluid is sprayed from the cleaning arms to the first, second and third honing surfaces. 4. The method of claim 38, further comprising: receiving the semiconductor wafer on a wafer loading-loading cup of the pivoting wafer transfer device of the honing device; Pivoting the wafer above the first wafer station to load-load the cup-84-200817131; and loading/loading the cup from the wafer to load the semiconductor wafer into the first, One of the second and third honing heads. 45. The method of claim 38, further comprising: pivoting the wafer transfer device to the honing device from one of the first, second, and third honing heads Wafer loading - carrying a cup, the wafer loading-loading cup is placed above the first wafer station; and Φ for loading, loading and unloading the wafer The cup pivots away from the first wafer station. 4. The method of claim 3, further comprising: after honing the semiconductor wafer on the third honing surface, transferring the semiconductor wafer using the third honing head of the rotating assembly To one of the honing equipment a four wafer station, including a fourth wafer station for removing the semiconductor wafer from the third honing head to the honing device, the fourth wafer station being placed on the first wafer Between the station and the third honing surface. 47. A method of honing a semiconductor wafer, the method comprising: loading and unloading a first wafer at a first honing device with a first and a second honing of a rotating assembly of the honing device Transferring a semiconductor wafer between one of the heads; using at least one honing head of the first and second honing heads of the rotating assembly, continuously licking on the first and second honing surfaces of the honing apparatus Grinding the semiconductor wafer; and after honing the semiconductor wafer on the first honing surface, using the at least one honing head of the first and second honing heads of the spinning-85-200817131 rotating assembly Transferring the semiconductor wafer to the second wafer load-and-load station of the honing device, including loading the semiconductor wafer to the first wafer load-and-load station, the first and second wafer carriers Each wafer loading-loading station of the in-and-out station is placed between the first and second honing surfaces. 48. The method of claim 47, wherein transferring the semiconductor wafer to the second wafer load-and-load station comprises rotating a rotating shaft to which the first and second honing heads are coupled, The first and second honing head rotation axes are rotationally moved in unison. The method of claim 4, further comprising independently pivoting the first and second honing heads about a pivot axis, each pivot axis of the pivot axes being located at the One of the first and second honing heads is between the axis of rotation. The method of claim 47, further comprising, when the first and second cleaning arms of the rotating assembly are rotated above the first and second honing surfaces, from the cleaning arms The method of spraying the fluid to the first and second portions of claim 47, wherein the method further comprises: loading and unloading the wafer on the wafer transfer device of the pivoting device of the honing device Receiving the semiconductor wafer; pivoting the wafer loading-loading cup above the first wafer loading-loading station; and loading-loading the cup from the wafer to the semiconductor crystal The circle is loaded into one of the first and second honing heads. -86-200817131 52. The method of claim 47, wherein the method further comprises: transferring the semiconductor wafer from the first and second honing heads to a pivot wafer transfer of the honing device The wafer loading-loading of the device, the wafer loading-and-loading cup is placed over the first wafer loading-loading station; and for removal, the wafer is removed The load-load cup is pivoted away from the first wafer load-load station. 5. The method of claim 47, further comprising: after honing the semiconductor wafer on the second honing surface, transferring the semiconductor wafer using the second honing head of the rotating assembly a third wafer loading-loading station to the honing device, including removing the semiconductor wafer from the second honing head to the third wafer loading-loading station, A three wafer load-loading station is placed between the first wafer load-load station and the second honing surface. 54. A method for honing a semiconductor wafer, the method comprising: one of a first wafer station of a honing device and a first and a second honing head of a rotating assembly of the honing device Transmitting a semiconductor wafer, the first wafer station being a wafer loading-loading station; using at least one honing head of the first and second honing heads of the rotating assembly at the first of the honing equipment And continuously honing the semiconductor wafer on the second honing surface. The first and second honing surfaces are placed around the axis of rotation so that the center of the first and second honing surfaces and the rotation The axis defines a first straight line; and after honing the semiconductor wafer on the first honing surface, the at least one honing head of the first and second honing heads of the rotary-87-200817131 rotating assembly is used And a conductor wafer is transferred to the second wafer station of the honing device, the first and second wafer stations are disposed around the rotation axis and disposed between the first and second honing surfaces, so that Each of the first and second wafer stations is placed between the first and second honing surfaces and the first and second Among the circle defined in the topocentric a second straight axis of rotation, relative to the first and second grinding surface is arranged WH the first and second wafer station, so that the first straight line is not perpendicular to the second straight line. 5. The method of claim 54, further comprising: loading the semiconductor wafer from the first honing head to the second wafer station; and removing the semiconductor wafer from the second crystal The round station is loaded to the second honing head. The method of claim 5, further comprising spraying fluid from the second wafer station to the semiconductor wafer when the semiconductor wafer is placed at the second wafer station. 57. The method of claim 54, wherein the transferring the semiconductor wafer to the second wafer station comprises rotating the first and second honing heads by rotating and connecting the first and second The honing head rotates in unison about the axis of rotation. 58. The method of claim 57, further comprising independently pivoting the first and second honing heads about a pivot axis, each of the pivot axes being located in the first and second One of the honing heads is between the axis of rotation. The method of claim 54, wherein the method further comprises: when the first and second cleaning arms of the rotating assembly are rotated above the first and second honing surfaces, The cleaning arm sprays fluid to the first and second honing surfaces. The method of claim 54, wherein the method further comprises: receiving the semiconductor wafer on a wafer loading-loading cup of the pivoting wafer transfer device of the honing device; Pivoting the wafer above the first wafer station to load-load the cup A cup is loaded-loaded from the wafer, and the semiconductor wafer is loaded into one of the first and second honing heads. 61. The method of claim 54, wherein the method further comprises: loading the semiconductor wafer from the one of the first and second honing heads to a wafer of the pivoting wafer transfer device of the honing device Loading-loading the cup, the wafer loading-loading cup is placed over the first wafer station, and For removal, the wafer load-load cup is pivoted away from the first wafer station. 62. A method for honing a semiconductor wafer, the method comprising: transferring a semiconductor wafer to a first wafer station of a honing device using a wafer transfer device, the first wafer station being a wafer carrier In and out of the station; respectively, using the first, second and third honing heads of the rotating assembly of the honing device to continuously transfer the semiconductor wafer to the first, second and third of the honing equipment Honing surface; -89- 200817131 respectively, using the first, second and third honing heads of the rotating assembly, continuously honing the first, second and third honing surfaces of the honing equipment Semiconductor wafer The semiconductor wafer is continuously transferred to the second, third, and fourth wafer stations of the honing device using the first, second, and third honing heads of the rotating assembly, respectively, the first wafer station Placed between the fourth wafer station and the first honing surface, the second wafer station is placed between the first and second honing surfaces, and the third wafer station is placed Between the second and third honing surfaces, and the fourth wafer station being placed between the third honing surface and the first wafer station; and using the wafer transfer device from the honing device The fourth wafer station removes the semiconductor wafer, and the fourth wafer station is another wafer carrying A_loading station. 6. The method of claim 26, wherein continuously transferring the semiconductor wafer to the first, second, and third honing surfaces of the honing apparatus comprises first and second The rotating shaft of the second grinding head rotates the first, second and third honing heads in unison about the rotation axis. 64. A method for honing a semiconductor wafer, the method comprising: transferring a semiconductor wafer to a first wafer station of a grinding apparatus using a wafer transfer apparatus, the first wafer station being a wafer Loading _ loading station; respectively using the first and stomach + _ grinding head of the rotating assembly of the honing device to continuously transfer the semiconductor wafer to the second honing surface of the honing device; -90- 200817131 respectively using the first and second honing surfaces of the first and second grinding devices of the rotating assembly to be continuously rounded; respectively, the first and second conductor wafers respectively using the rotating assembly are continuously transferred to the a station of the honing device, the first wafer station is placed between the third wafer station faces, and the second wafer station is placed at the first and third wafer stations And removing the semiconductor wafer from the honing device using the wafer transfer device, the third wafer station being another station. 65. The method of claim 64, wherein the first and second turns of the conductor wafer to the honing device are coupled to the center of the first and second honing heads Rotating the first and second honing heads between the halved second semiconductor wafer and the first honing two honing surface, the first wafer station Three wafer station wafer loading - loading and unloading the semi-grinding surface includes rotating by a rotating shaft: a honing head. -91-