[go: up one dir, main page]

TW200802815A - A novel P-channel flash memory device - Google Patents

A novel P-channel flash memory device

Info

Publication number
TW200802815A
TW200802815A TW095122357A TW95122357A TW200802815A TW 200802815 A TW200802815 A TW 200802815A TW 095122357 A TW095122357 A TW 095122357A TW 95122357 A TW95122357 A TW 95122357A TW 200802815 A TW200802815 A TW 200802815A
Authority
TW
Taiwan
Prior art keywords
novel
memory device
flash memory
channel flash
sige
Prior art date
Application number
TW095122357A
Other languages
Chinese (zh)
Other versions
TWI299563B (en
Inventor
Chi-Chao Wang
Kuei-Shu Changliao
Original Assignee
Nat Univ Tsing Hua
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Tsing Hua filed Critical Nat Univ Tsing Hua
Priority to TW095122357A priority Critical patent/TWI299563B/en
Publication of TW200802815A publication Critical patent/TW200802815A/en
Application granted granted Critical
Publication of TWI299563B publication Critical patent/TWI299563B/en

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

A novel P-channel Flash device with SiGe or Ge surface channel is proposed to improve programming speed under BBHE operation. In addition, silicon cap layer is introduced optionally to improve the electrical characteristics of the interface between the tunneling oxide layer and SiGe or Ge layer. In addition to high speed application, this new device can also be programmed at low voltage to maintain the same programming speed.
TW095122357A 2006-06-21 2006-06-21 A novel p-channel flash memory device TWI299563B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095122357A TWI299563B (en) 2006-06-21 2006-06-21 A novel p-channel flash memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095122357A TWI299563B (en) 2006-06-21 2006-06-21 A novel p-channel flash memory device

Publications (2)

Publication Number Publication Date
TW200802815A true TW200802815A (en) 2008-01-01
TWI299563B TWI299563B (en) 2008-08-01

Family

ID=44765489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122357A TWI299563B (en) 2006-06-21 2006-06-21 A novel p-channel flash memory device

Country Status (1)

Country Link
TW (1) TWI299563B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677092B (en) * 2017-12-20 2019-11-11 新唐科技股份有限公司 Semiconductor device and semiconductor structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8817543B2 (en) * 2012-07-11 2014-08-26 Ememory Technology Inc. Flash memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677092B (en) * 2017-12-20 2019-11-11 新唐科技股份有限公司 Semiconductor device and semiconductor structure
US11342439B2 (en) 2017-12-20 2022-05-24 Nuvoton Technology Corporation III-V field effect transistor and semiconductor structure

Also Published As

Publication number Publication date
TWI299563B (en) 2008-08-01

Similar Documents

Publication Publication Date Title
TW200625553A (en) Semiconductor device and manufacturing method of semiconductor device
TW200721462A (en) Single-poly non-volatile memory device and its operation method
TW200610025A (en) A floating gate having enhanced charge retention
IN2012DN05057A (en)
TW200802384A (en) Method of programming and erasing a P-channel BE-SONOS nand flash memory
ATE555503T1 (en) FIELD EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF
WO2009058695A3 (en) Cool impact-ionization transistor and method for making same
DE602006013456D1 (en) TRANSISTOR WITH IMPROVED TIP PROFILE AND MANUFACTURING METHOD THEREFOR
EP2031643A3 (en) Blocking dielectric bandgap engineered SONOS/MONOS memory
WO2008004179A3 (en) Non-volatile memory and-array and method for operating the game
TW200746402A (en) Methods for erasing and programming memory devices
TW200616096A (en) Method of forming a nanocluster charge storage device
TW200504755A (en) Nonvolatile memory cells with buried channel transistors
WO2008070578A3 (en) Method for reducing charge loss in analog floating gate cell
TW200701403A (en) A method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length
TW200640017A (en) Methods for programming a floating body nonvolatile memory
WO2012148573A3 (en) A high endurance non-volatile memory cell and array
TW200638517A (en) Method for fabricating semiconductor device
TW200727302A (en) High-speed low-voltage programming and self-convergent high-speed low-voltage erasing schemes for EEPROM
TW200723409A (en) Power semiconductor device having improved performance and method
TW200802815A (en) A novel P-channel flash memory device
TW200620480A (en) Programming, erasing and reading structure for an NVM cell
TW200715574A (en) SONOS memory cell having high-K dielectric
EP2421027A3 (en) Memory device comprising a polycrystalline-silicon floating gate having impurities therein and manufacturing method thereof
CN104157655B (en) SONOS flash memory device and compiling method thereof