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TW200801810A - Resist composition for immersion lithography, and method for forming resist pattern - Google Patents

Resist composition for immersion lithography, and method for forming resist pattern

Info

Publication number
TW200801810A
TW200801810A TW096105296A TW96105296A TW200801810A TW 200801810 A TW200801810 A TW 200801810A TW 096105296 A TW096105296 A TW 096105296A TW 96105296 A TW96105296 A TW 96105296A TW 200801810 A TW200801810 A TW 200801810A
Authority
TW
Taiwan
Prior art keywords
acid
immersion lithography
resin
resist composition
forming
Prior art date
Application number
TW096105296A
Other languages
English (en)
Other versions
TWI383260B (zh
Inventor
Makiko Irie
Takeshi Iwai
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200801810A publication Critical patent/TW200801810A/zh
Application granted granted Critical
Publication of TWI383260B publication Critical patent/TWI383260B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW096105296A 2006-02-17 2007-02-13 浸液曝光用光阻組成物及光阻圖型之形成方法 TWI383260B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006041116 2006-02-17
JP2006122330A JP4912733B2 (ja) 2006-02-17 2006-04-26 液浸露光用レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200801810A true TW200801810A (en) 2008-01-01
TWI383260B TWI383260B (zh) 2013-01-21

Family

ID=38371378

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105296A TWI383260B (zh) 2006-02-17 2007-02-13 浸液曝光用光阻組成物及光阻圖型之形成方法

Country Status (5)

Country Link
US (1) US8394569B2 (zh)
JP (1) JP4912733B2 (zh)
KR (1) KR101032019B1 (zh)
TW (1) TWI383260B (zh)
WO (1) WO2007094192A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480682B (zh) * 2008-06-30 2015-04-11 Fujifilm Corp 感光化射線性或感放射線性樹脂組成物及使用它之圖案形成方法
US9046766B2 (en) 2008-07-09 2015-06-02 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4842844B2 (ja) * 2006-04-04 2011-12-21 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
KR101242332B1 (ko) * 2006-10-17 2013-03-12 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 이것을 이용한 패턴 형성 방법
JP2008145667A (ja) * 2006-12-08 2008-06-26 Tokyo Ohka Kogyo Co Ltd 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法
US7998654B2 (en) 2007-03-28 2011-08-16 Fujifilm Corporation Positive resist composition and pattern-forming method
JP4961374B2 (ja) * 2007-03-28 2012-06-27 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
US8057983B2 (en) * 2008-04-21 2011-11-15 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
US8062830B2 (en) * 2008-04-21 2011-11-22 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
KR101821704B1 (ko) * 2010-12-13 2018-01-25 주식회사 동진쎄미켐 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법
JP5675664B2 (ja) * 2012-01-24 2015-02-25 信越化学工業株式会社 パターン形成方法
CN112925167A (zh) * 2021-01-26 2021-06-08 宁波南大光电材料有限公司 具有光酸活性的光刻胶树脂及光刻胶

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US6200725B1 (en) * 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
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US5945517A (en) * 1996-07-24 1999-08-31 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition
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JP4079893B2 (ja) 2004-02-20 2008-04-23 セントラル硝子株式会社 含フッ素環状化合物、含フッ素高分子化合物、それを用いたレジスト材料及びパターン形成方法
JP4502715B2 (ja) * 2004-03-05 2010-07-14 東京応化工業株式会社 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法
JP4484603B2 (ja) 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
JP4409366B2 (ja) 2004-06-08 2010-02-03 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
EP1621927B1 (en) * 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4740666B2 (ja) * 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4362424B2 (ja) * 2004-09-01 2009-11-11 パナソニック株式会社 レジスト材料及びパターン形成方法
US7537879B2 (en) * 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP4861767B2 (ja) * 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4871549B2 (ja) 2005-08-29 2012-02-08 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7358029B2 (en) 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
JP4691442B2 (ja) * 2005-12-09 2011-06-01 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4717640B2 (ja) 2005-12-12 2011-07-06 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP5114021B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
US7799507B2 (en) * 2006-05-18 2010-09-21 Tokyo Ohka Co., Ltd. Positive resist composition for immersion lithography and method for forming resist pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480682B (zh) * 2008-06-30 2015-04-11 Fujifilm Corp 感光化射線性或感放射線性樹脂組成物及使用它之圖案形成方法
US9046766B2 (en) 2008-07-09 2015-06-02 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same
TWI497199B (zh) * 2008-07-09 2015-08-21 Fujifilm Corp 感光化射線或感放射線樹脂組成物及使用它之圖案形成方法

Also Published As

Publication number Publication date
TWI383260B (zh) 2013-01-21
US20090042132A1 (en) 2009-02-12
KR20080085235A (ko) 2008-09-23
JP2007249152A (ja) 2007-09-27
KR101032019B1 (ko) 2011-05-02
WO2007094192A1 (ja) 2007-08-23
JP4912733B2 (ja) 2012-04-11
US8394569B2 (en) 2013-03-12

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