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TW200801751A - Liquid crystal display and method for fabricating the same - Google Patents

Liquid crystal display and method for fabricating the same

Info

Publication number
TW200801751A
TW200801751A TW095148776A TW95148776A TW200801751A TW 200801751 A TW200801751 A TW 200801751A TW 095148776 A TW095148776 A TW 095148776A TW 95148776 A TW95148776 A TW 95148776A TW 200801751 A TW200801751 A TW 200801751A
Authority
TW
Taiwan
Prior art keywords
storage electrode
fabricating
liquid crystal
thin film
crystal display
Prior art date
Application number
TW095148776A
Other languages
Chinese (zh)
Other versions
TWI392941B (en
Inventor
Seok-Woo Lee
Young-Joo Kim
Original Assignee
Lg Philips Lcd Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Philips Lcd Co Ltd filed Critical Lg Philips Lcd Co Ltd
Publication of TW200801751A publication Critical patent/TW200801751A/en
Application granted granted Critical
Publication of TWI392941B publication Critical patent/TWI392941B/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/42—Arrangements for providing conduction through an insulating substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A liquid crystal display and a method for fabricating the same are disclosed. The method for fabricating a liquid crystal display, which includes preparing an insulating substrate defining a pixel portion divided into a thin film transistor region and a storage region, sequentially forming a polycrystalline silicon film and a storage electrode film on an entire surface of the substrate, selectively patterning the storage electrode film and the polycrystalline silicon film to form a pixel pattern that covers the pixel portion, and selectively removing the storage electrode film of the thin film transistor region from the pixel pattern to form a storage electrode in the storage region and at the same time form an active layer in the thin film transistor region, the active layer being formed of a polycrystalline silicon film exposed by the storage electrode. Since the active layer and the storage electrode are formed by diffraction exposure using a single mask, the number of masks used in fabrication of a thin film transistor can be reduced to reduce the fabricating process steps and the fabricating cost.
TW095148776A 2006-06-30 2006-12-25 Liquid crystal display and manufacturing method thereof TWI392941B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060061663 2006-06-30
KR1020060120219A KR101331803B1 (en) 2006-06-30 2006-11-30 Liquid crystal display and method for fabricating the same

Publications (2)

Publication Number Publication Date
TW200801751A true TW200801751A (en) 2008-01-01
TWI392941B TWI392941B (en) 2013-04-11

Family

ID=39011288

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148776A TWI392941B (en) 2006-06-30 2006-12-25 Liquid crystal display and manufacturing method thereof

Country Status (3)

Country Link
KR (1) KR101331803B1 (en)
CN (1) CN101097370B (en)
TW (1) TWI392941B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104793415A (en) * 2014-01-17 2015-07-22 群创光电股份有限公司 Thin film transistor substrate, display panel and display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792500A (en) * 1993-06-29 1995-04-07 Toshiba Corp Semiconductor device
JP3245527B2 (en) * 1995-12-13 2002-01-15 シャープ株式会社 Liquid crystal display
JP3657371B2 (en) * 1996-11-06 2005-06-08 株式会社半導体エネルギー研究所 Active matrix display device
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW490858B (en) * 2001-04-26 2002-06-11 Samsung Electronics Co Ltd Polycrystalline thin film transistor for liquid crystal device(LCD) and method of manufacturing the same
US20060061701A1 (en) * 2004-09-22 2006-03-23 Shih-Chang Chang Pixel of a liquid crystal panel, method of fabricating the same and driving method thereof

Also Published As

Publication number Publication date
CN101097370A (en) 2008-01-02
KR101331803B1 (en) 2013-11-25
TWI392941B (en) 2013-04-11
CN101097370B (en) 2010-05-19
KR20080003179A (en) 2008-01-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees