200800792 九、發明說明: 【發明所屬之技術領域】 本發明大體而言係關於光學對準,且具體而言,係關於對印刷 電路板中所要處理之目標之光學對準。 【先前技術】 雷射微加工尤其用於在印刷電路板(pCB)中形成孔。隨著pcB 之元件尺寸之縮小,對雷射加工之定位及精度之要求不斷提高。 【發明内容】 在本發明之一實施例中,提供一種在一部位處對一定位進行微 加工之微加卫裝置,該部位通常包含_篏於印刷電路板(p⑻之 電路絕緣基板中之物件,例如㈣科。該裝置包含—光學系統, ^學线以-姉源對該職照明,因㈣照㈣自該部位接 = 並將一微加工光束自-光束源傳遞至該定位。在該 戶trr—個共用元件’例如—可操控之鏡,其用於 有二種魏。姉射源與該光束源 源通常爲雷射器。該幸J(波長工作„亥先束 例中,該_亦可爲:::二_’儘管在*些實施 影:=::==成像,且-處™ 置。該處理器産生—H *電焊墊之中心)之實際位 加工光束相對於該定貫::置之信號,並使用該信號將微 後,該處理常係11由㈣該可操控之鏡。然 作先束源來使用對準之光束對該定位微加工。該 5 200800792 二束:在定位上微加工出實質呈任意形狀之孔。藉由對部位照 邛位成像及光束傳遞功能使用至少一個丑 .夠:該部位提供局部高強度照明,由此形成〜^ 亚因而迅速、精確地將微加工光束對準該定位。 通常,該裝置用於在PCB中之多個部位進行微加工,盆中 同之位置。對於每—部位,該處理器皆可藉由例如 心路之電腦輔助製造(CAM)㈣來計算所要微加工之定位之 名義座標’顺賴#名義賴對絲m以㈣部位在名 義上與光束及科。在每_部位上,皆如上所料定光束之 貫際位置。對於該多個部位中之至少某些部位,藉由僅操作可摔 控之鏡來實施光束在各部位m精準,纽提高對pcB微加 工之速率’同㈣持使光束對於所有部位皆精確對準。 在-所揭示之實施例中,該影像感測器獲得該光束照到該部位 上之局域之影像,通常係藉由由該處理器以低於該部位之燒钱臨 限值之低功率操作該光束源來進行。處理器根據該部位之影像及 光束所Μ之局域之影像,確定要制光束應狀偏移量,藉以 執行上文所述之光束對準。 在某些實施例中,輕射源可産生營光輕射作爲返回韓射,且影 像感測器根據該螢純射形成該部位之及/或—校準目標之影像。 處理器可itf_該部狀#純性來㈣騎社料^或及 功率。可實施朗整來使_源之f|射穿透該部錢/或環繞該部 位之區域,藉錢自螢純射得狀㈣位之影像最佳。使用榮 光輻射會消除若輻射源爲雷射器時之斑點問題。 200800792 在本發明之-替代實施例中,輕射源之轄射線性偏振,且可對 返回輕射進行偏振分析。對於包含⑽人導電物體之部位,由於 該物體之表面粗糙度’來自該物體之返回射通常至少部分地消 偏振。因此,影像感測益能夠形成物體相對於其周圍環境(其返 回輻射通常不被消偏振)之具有良好反差之影像。 在本發明之又-替代實施例中,該輕射源包含—雷射器,該雷 射器産生具有短之相干長度之相關光束,以實質消除斑點效應。200800792 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates generally to optical alignment and, in particular, to optical alignment of objects to be processed in a printed circuit board. [Prior Art] Laser micromachining is particularly useful for forming holes in a printed circuit board (pCB). As the component size of pcB shrinks, the requirements for the positioning and accuracy of laser processing continue to increase. SUMMARY OF THE INVENTION In one embodiment of the present invention, there is provided a micro-drawing device for micro-machining a position at a portion, the portion generally comprising an object in a circuit board of a printed circuit board (p(8) For example, (4) Section. The device contains an optical system, and the line is illuminated by the source, because (4) is connected from the location and a micromachined beam is transmitted from the beam source to the location. Household trr - a common component 'for example - a steerable mirror for two kinds of Wei. The source of the beam and the source of the beam is usually a laser. The lucky J (wavelength work) Can also be::: two _' although in some implementations: =::== imaging, and - at TM. The processor produces - the center of the H * solder pad) the actual processing beam relative to the Through:: set the signal, and use the signal to be micro, the processing is often performed by (4) the steerable mirror. However, the first beam source is used to align the positioning using the aligned beam. The 5 200800792 : Micro-machining a hole of substantially arbitrary shape in positioning. By imaging the position And the beam transfer function uses at least one ugly. Enough: the part provides local high-intensity illumination, thereby forming a gradual and precise alignment of the micromachined beam to the location. Typically, the device is used in the PCB. The parts are micromachined and the same position in the basin. For each part, the processor can calculate the nominal coordinates of the positioning of the micromachining by the computer aided manufacturing (CAM) (4) of the heart path. For the wire m, the (four) part is nominally associated with the beam and the section. At each position, the position of the beam is determined as above. For at least some of the parts, by only operating the control The mirror is used to implement the beam at each location m to be precise, and the rate of the micro-machining of the pcB is increased by the same (4) that the beam is precisely aligned for all parts. In the disclosed embodiment, the image sensor obtains the beam image. The image of the local area on the location is typically performed by the processor operating the beam source at a low power below the burnout threshold of the location. The processor is based on the image and beam of the location. Bureau The image of the domain is determined to be offset by the beam to perform the beam alignment described above. In some embodiments, the light source can generate a camping light shot as a returning to the Han, and image sensing According to the fluorescing shot, the image of the part and/or the calibration target is formed. The processor can be itf_ the part of the # pureness (4) riding the material ^ or and the power can be implemented to make the _ source f | Shooting through the money / or around the area, borrowing money from the fluorescing shot (four) is the best image. Using glory radiation will eliminate the problem of spots if the radiation source is a laser. 200800792 in this In an alternative embodiment, the light source has a radiant polarization and can perform polarization analysis on the return light. For a portion containing (10) a person's conductive object, the surface roughness of the object is returned from the object. Usually at least partially depolarized. Thus, image sensing benefits can form an image with good contrast of the object relative to its surroundings, where the return radiation is typically not depolarized. In still another alternative embodiment of the invention, the light source comprises a laser that produces an associated beam of light having a short coherence length to substantially eliminate speckle effects.
另-選擇爲’或者另外,該輕射源包含甩於減小及/或消除斑點之 其他組件,例如具有不同光波長之複數個光纖。 “在另-所揭示實施例中,該輻射源用以使用結構化照明(例如 藉由在該部位處形成以-物體爲中心之圓環)來照明該部位,且 基板係漫射性的。圓環照射與漫射性基板相組合會有效地對物體 「從背後照明」。 因此,根據本發明之-實施例,提供一種用於微加工一材料之 方法,其包含: 配置一光學系統,以藉由該光學系統之一給定元件對該材料之 —部位提供處於-照明波長之照明,該照明自該部位産生返回輕 射; 胃 配置該光學系統,以藉由該給定元件接收該返 形成該部位之一影像; 根據該影像計算該部位處一定位之實際位置, 定位之實際位置之信號; 産生-微加X轄射光束,其具有㈣於該照明波長之一微加 回幸§射,並據此 並輸出一指示該 工 7 200800792 波長; 因應該信號而相對於該定位確定該光束之位置,以形成對準光 丄由4光學系統之至少該給定元件將該對準光束傳遞至該定 位,以便在該定位處執行_微加卫操作^Alternatively-selected or otherwise, the light source comprises other components that are reduced and/or eliminated, such as a plurality of fibers having different wavelengths of light. "In another disclosed embodiment, the source of radiation is used to illuminate the portion using structured illumination (e.g., by forming an -object-centered ring at the location), and the substrate is diffusive. The combination of circular illumination and a diffusing substrate effectively "backlit" the object. Accordingly, in accordance with an embodiment of the present invention, a method for micromachining a material is provided, comprising: configuring an optical system to provide an illumination of a portion of the material by a given component of the optical system Illumination of the wavelength, the illumination is generated from the portion to return light; the stomach is configured to receive an image of the portion by the given component; and calculating the actual position of the location at the location according to the image, a signal that locates the actual position; generates a micro-added X-ray beam that has (iv) a micro-addition of one of the illumination wavelengths, and accordingly outputs a signal indicating the wavelength of the 2008 7792; Determining the position of the beam at the location to form an alignment pupil is transmitted to the location by at least the given component of the 4 optical system to perform a _micro-lift operation at the location ^
通常’該部位包含嵌於一個或多個絕緣基板中之一物體,且對 該部位提供㈣可包含提供僅對環繞該物體之—區域進行照明之 結構化照明。構化㈣可由—衍射元件形成。 在一實施例中,對該部位提供照明包含將該照明波長選擇成— 使及独發出營光之波長,且該返回輻射包含因應所提供之昭明 而於該部位處產生之螢林射。該方法可包含過㈣螢光輕射, 以使該部位之影像最佳。 在一替代實施例中,對該部位提供照明包含對該部位提供 照明’且形成該部位之影像包含對來自該部位之返回輻射進行偏 振分析。 在某些實施例中,該給定元件包含一可操控之鏡,該部位可包 含要在其中執行微加工之複數個不同子部位,且確定該光束之位 置可包含藉由僅操控該鏡來將光束射至該複數個不同子部位。 在又-替代實施例中,該給定元件包含一光學元件串,該光學 元件串用以將光束及照明聚焦至該部位。 該部位可包含-部位區域,且對該部位提供照明可包含對該部 位區域及對不大於該部位區域且與其鄰近之另一區域提供照明。 通常,形成影像可包含在一影像感測器上形成影像,且該照明可 8 200800792 具有能在3毫秒或更短時間内在影像感测器上産生影像之強度。 形成影像可包含在具有一像素陣列之影像感測器上形成影像,並 因應該區域及該另一區域而自陣列中選擇像素以分析影像。 该方法還包含在對該部位提供照明之前確定該定位之一名義位 置並因應该名義位置而提供照明。 在再一替代實施例中,産生該微加工輻射光束包含: 產生一低功率光束,該光束之功率低於該部位之燒蝕臨限值; 將該低功率光束傳遞至該部位;以及 因應該低功率光束在該部位之-影像而確定該光束之-偏移 量。 通常,確定該光束之位置包含因應該偏移量而確定該光束之位 置々,且將已確^位置之光束傳遞至該定位包含將該光束設定成具 有等於或大於該燒蝕臨限值之一功率。 該方法可包含將該照明波長配置成具有使該部位爲非吸收性之Typically, the portion includes an object embedded in one or more of the insulative substrates, and providing (4) to the portion can include providing structured illumination that illuminates only the area surrounding the object. The conformation (4) can be formed by a diffractive element. In one embodiment, providing illumination to the portion includes selecting the illumination wavelength to - and independently emit a wavelength of the camping light, and the return radiation comprises a firefly shot generated at the location in response to the provided indication. The method may include a (four) fluorescent light shot to optimize the image of the portion. In an alternate embodiment, providing illumination to the portion includes providing illumination to the portion and forming an image of the portion includes performing a polarization analysis of the return radiation from the portion. In some embodiments, the given element includes a steerable mirror, the portion can include a plurality of different sub-portions in which micromachining is to be performed, and determining the position of the beam can include by only manipulating the mirror The beam is directed to the plurality of different sub-portions. In yet another alternative embodiment, the given element includes a string of optical elements for focusing the beam and illumination to the location. The portion can include a - site region, and providing illumination to the portion can include providing illumination to the region region and to another region that is no greater than the portion region and adjacent thereto. Typically, forming an image can include forming an image on an image sensor, and the illumination can have an intensity that produces an image on the image sensor in less than 3 milliseconds or less. Forming an image can include forming an image on an image sensor having a pixel array and selecting pixels from the array to analyze the image in response to the region and the other region. The method also includes determining a nominal location of the location prior to providing illumination to the location and providing illumination in response to the nominal location. In still another alternative embodiment, generating the micromachined radiation beam comprises: generating a low power beam having a power below an ablation threshold of the portion; transmitting the low power beam to the portion; The low power beam is imaged at that location to determine the offset of the beam. Typically, determining the position of the beam includes determining the position 々 of the beam due to the amount of offset, and transmitting the beam of the determined position to the location includes setting the beam to have a value equal to or greater than the ablation threshold. One power. The method can include configuring the illumination wavelength to have the portion non-absorbent
在-替代之所揭示實施例中,該部位包含一外表面,且對 位提供照明包含以垂直於該外表面之成像輻射對該部㈣明。… 制部域供照料包含在該輕提供相干成料射,該相干 成像輪射具有等於或小於該部位尺寸之二 一 L之相干長度。 在再-替代之所揭示實施例中,計算實際位置包含: 根據該部位之一預期影像提供一理論闕係; 3 根據該影像確定一實際關係;及 將該實際闕係擬合至該理論關係。 9 200800792 形成該部位之影像可包含調整照明波長與照明之功率中之至少 一者,以便改變照明在該部位處之穿透深度。 在一貫施例中,該部位包含嵌入一漫射層中之一物體,且該方 法包含補償由嵌入漫射層中之物體所形成之影像而造成之偏差。 根據本發明之一實施例,更提供一種用於微加工一材料之方 法,包含: 操作一源,以對該材料中包含一定位之一部位提供一輕射光 束’該輻射光束處於一使該材料發出螢光之工作波長,且處於不 足以進行微加工之一光束功率,以便自該部位産生螢光輻射; 因應該螢光韓射而形成該部位之一影像; 因應該影像而相對於該定位確定該光束之位置;以及 操作該源,以對該定位提供該輕射光束,該輕射光束處於該工 作波長且處於足以促成對該m加王之―微加工功率。 通吊^,以a亥光束功率操作該源包含經由一光束導向光學系統對 該部位提供該輻射光束,且形成該影像包括經由該光束導向光學 系統之至少—Μ件將該營光輻射傳送至-影像感測器。該方法 可包括過濾該螢光輻射,以使該部位之影像最佳。 據本毛月之一貫施例,更提供一種用於微加工一材料之裝 置,其包含: ^幸田射’原丨用以藉由一光學系統之一給定元件對該材料之-部倾供處於—照明波長之照明,該Μ自該部位産生返回_ ,。像感心’其用以藉由該給定元件接收該返回輕射,並击 此形成該部位之一影像; 10 200800792 光束源’其用以産生—微加工輻射光束,該微加卫韓射光束 具有不同於該照明波長之一微加工波長;及 一處理器’其用以根據該影像計算該部位處—^位之實^位 置,並輸出—指示該定位之實際位置之信號,因應該信號而相對 於該定位確定絲权位置以形成對準光束,及操作該光束源, 以經由該光學系狀至少該給定元件將該對準光束傳遞至該定 位’藉以在該定位處執行一微加工操作。 且該處理 其使影像 。該裝置可包含-組遽光片,其用以過遽該螢光輕射 器可用以選擇該組中之—者,以使該部位之影像最佳 照明可包含偏振照明,且該裝置可包含一偏振元件 感測器能夠對來自該部位之返回輻射進行偏振分析。 δ玄給定元件可包含一可操控之鏡。 或者,該給定元件可包含一光學元件串,其用以將光束及照明 聚焦至該部位。 材料之裝 根據本發明之一實施例,更提供一種用於微加工 置,其包含: 光束源’其用以對該材料中包含_中> 3疋位之一部位提供一輻射 光束,該輻射光束處於使該材料發出螢朵 几〈一工作波長,且處於 不足以進行微加工之-光束功率,藉以自該定位産生螢光輕射. -影像感測器,其用以因應該榮光輕射而形成 二 像;及 〜 -處理器,其用以因應該影像而相對於該定位衫該光束之位 置,並操作該光束源,以便以該工作波長及—微力山力率對該定 200800792 位提供該輻射光束,該微加工功率足以促成對該定位之微加工。 該裝置可包含一光束導向光學系統,且以該光束功率操作該光 束源可包含藉由該光束導向光學系統對該部位提供該輻射光束, 且形成該影像可包括藉由該光束導向光學系統之至少一個元件將 該螢光輻射傳送至影像感測器。 該裝置可包含一組濾光片,其用以過濾該螢光輻射,且該處理 器可用以選擇該組中之一者,以使該部位之影像最佳。 ^ 結合附圖閱讀下文對本發明實施例之詳細說明,將能更全面地 理解本發明,下面將對附圖予以簡要說明。 【實施方式】 現在參見第1圖,其係根據本發明一實施例之一光束對準裝置 20之示意圖。裝置20用於微加工一部位43,在下文中,例如假 定部位43包含於一印刷電路板(PCB) 24中。部位43通常包含 絕緣基板材料(例如帶有玻璃珠及/或纖維之環氧樹脂)及/或導電 φ 材料(例如銅焊墊或迹線)。通常,儘管未必盡然,部位43包含 嵌於絕緣基板材料中之導電材料。裝置20包含一光束源22,其經 由一準直器27投射一輻射光束26。光束26用於在部位43中之定 位處微加工一孔。在一實施例中,源22包含以約350奈米之光束 波長工作之一紫外線(UV)雷射器。該UV雷射器可作爲使用短 脈衝之非線性相互作用來引起燒蝕之一短脈衝雷射器工作,該等 脈衝之長度處於毫微微秒數量級。在一替代實施例中,源22包含 一以約10微米之光束波長工作之二氧化碳雷射器。然而,裝置20 可使用任何可經配置而提供部位43所能吸收之輻射能之適當輻射 12 200800792 源,所述輻射能之形式及能級可用於微加工。在下文中,作爲實 例,假定源22包含一雷射器,因而光束26係爲雷射器輻射光束。 一組31光學組件包含一分束鏡28、一光學元件串30及一鏡34, 其用作一光束導向系統來將光束傳遞至PCB上。通常,鏡34係一 正面鏡,且分束鏡28係一窄帶二向色立體角分束鏡,其透射光束 波長並反射其他波長。光學元件串30及PCB 24安裝於各自之平 移平臺33、45上。鏡34安裝於一光束操控平臺35上,光束操控 平臺35通常係基於檢流計之操控平臺,或者如在第11/472,325號 美國專利申請案中所述之二軸式快速光束操控平臺。第11/472,325 號美國專利申請案讓於本發明之受讓人,並以引用方式倂入本文 中。雷射光束26藉由分束鏡傳輸至光學元件串,由光學元件串引 導举聚焦該光束。 裝置20係配置成一「後掃描」系統,其中在鏡34與PCB 24間 不存在光學元件。在此種配置中,該鏡之視場通常約爲±3°。 除非另外指明外,下文說明著重於使用一個雷射光束對PCB 24 微加工。然而,應瞭解,本發明之實施例可實質上同時使用不止 一個雷射光束進行操作。 操作員23使用一工作站21操作裝置20,工作站21包含一記憶 體25及一處理單元(PU) 32。PU 32使用存儲於記憶體25中之 指令來控制裝置20之各個元件,例如雷射器22及平移和光束操 控平臺。除操作平臺33、35以外,當正在部位43中,微加工一 特定孔時,PU 32還可改變光學元件串30之焦點。該孔係在PCB 24之頂面36上之所選區42中微加工。插圖44更詳細地顯示部位 13 200800792 43 ’其包含區42及環繞該區之一區域。In an alternative embodiment disclosed, the portion includes an outer surface and the illumination is provided to include the imaging radiation perpendicular to the outer surface to the portion (four). The part field care is included in the lightly providing coherent shot, the coherent imaging wheel having a coherence length equal to or less than two L of the size of the part. In the disclosed embodiment of the re-alternative, calculating the actual position comprises: providing a theoretical system based on the expected image of the portion; 3 determining an actual relationship based on the image; and fitting the actual tether to the theoretical relationship . 9 200800792 Forming an image of the portion can include adjusting at least one of an illumination wavelength and a power of illumination to change the penetration depth of the illumination at the location. In a consistent embodiment, the portion includes an object embedded in a diffusing layer, and the method includes offsetting the image caused by the image formed by the object embedded in the diffusing layer. According to an embodiment of the present invention, there is provided a method for micromachining a material, comprising: operating a source to provide a light beam to a portion of the material that includes a location of the radiation beam The material emits a working wavelength of fluorescence and is insufficient to micro-process one of the beam powers to generate fluorescent radiation from the portion; an image of the portion is formed due to the fluorescent incident; the image is relative to the image Positioning determines the position of the beam; and operating the source to provide the light beam to the location, the light beam being at the operating wavelength and at a level sufficient to contribute to the "micromachining power" of the m. Operating the source at a beam power of a beam comprising providing the radiation beam to the portion via a beam directing optical system, and forming the image includes transmitting the camping radiation to at least the element via the beam directing optical system - Image sensor. The method can include filtering the fluorescent radiation to optimize the image of the portion. According to the consistent application of this month, a device for micromachining a material is provided, which comprises: ^Sumoda's original 丨 used to supply the material to a part by a given component of an optical system At the illumination of the illumination wavelength, the 产生 produces a return _ from that location. Like a sense of heart's use to receive the returning light shot by the given element and hitting to form an image of the portion; 10 200800792 beam source 'which is used to generate a micromachined radiation beam, the micro-assisted Korean beam Having a micromachining wavelength different from the illumination wavelength; and a processor for calculating a real position of the location at the location based on the image, and outputting a signal indicating the actual location of the location, corresponding to the signal And determining a position of the filament relative to the positioning to form an alignment beam, and operating the beam source to deliver the alignment beam to the location via the optical system at least the given element to thereby perform a micro at the location Processing operations. And this handles the image. The device can include a set of phosphors for use in the fluorescent light emitter to select one of the groups such that optimal illumination of the image of the portion can include polarized illumination, and the device can include A polarizing element sensor is capable of performing polarization analysis on the return radiation from the portion. The δ my given component can include a steerable mirror. Alternatively, the given element can include a string of optical elements for focusing the beam and illumination to the location. Material Packing According to an embodiment of the present invention, there is further provided a micromachining apparatus comprising: a beam source for providing a radiation beam to a portion of the material comprising a _zhong>3 , position, The radiation beam is at a beam power that causes the material to emit a certain amount of light, and is insufficient for micromachining, thereby generating a fluorescent light from the positioning. - Image sensor, which is used for glory Shooting to form a two image; and ~ - a processor for locating the beam relative to the position of the beam in response to the image, and operating the beam source to determine the operating wavelength and the micro-force rate of 200800792 The bit provides the radiation beam, the micromachining power being sufficient to facilitate micromachining of the location. The apparatus can include a beam directing optical system, and operating the beam source at the beam power can include providing the radiation beam to the portion by the beam directing optical system, and forming the image can include directing the optical system by the beam At least one component transmits the fluorescent radiation to the image sensor. The device can include a set of filters for filtering the fluorescent radiation, and the processor can be used to select one of the groups to optimize the image of the portion. The invention will be more fully understood from the following detailed description of embodiments of the invention, [Embodiment] Referring now to Figure 1, there is shown a schematic diagram of a beam aligning device 20 in accordance with one embodiment of the present invention. The device 20 is used to micromachine a portion 43, hereinafter, for example, the dummy portion 43 is contained in a printed circuit board (PCB) 24. The portion 43 typically comprises an insulating substrate material (e.g., epoxy with glass beads and/or fibers) and/or a conductive φ material (e.g., a copper pad or trace). Typically, although not necessarily, the portion 43 comprises a conductive material embedded in the insulating substrate material. Apparatus 20 includes a beam source 22 that projects a beam of radiation 26 via a collimator 27. Beam 26 is used to micromachine a hole in the location in location 43. In one embodiment, source 22 includes an ultraviolet (UV) laser that operates at a beam wavelength of about 350 nm. The UV laser can operate as a short pulse laser that uses a nonlinear interaction of short pulses to cause ablation, the length of which is on the order of femtoseconds. In an alternate embodiment, source 22 includes a carbon dioxide laser that operates at a beam wavelength of about 10 microns. However, device 20 can use any source of appropriate radiation 12 200800792 that can be configured to provide radiant energy that can be absorbed by site 43, which can be used for micromachining. In the following, as an example, it is assumed that the source 22 comprises a laser, and thus the beam 26 is a laser beam of radiation. A set of 31 optical components includes a beam splitter 28, an optical element string 30, and a mirror 34 that acts as a beam steering system to deliver the beam to the PCB. Typically, mirror 34 is a front mirror and beam splitter 28 is a narrow band dichroic solid angle beam splitter that transmits the beam wavelength and reflects other wavelengths. The optical element string 30 and the PCB 24 are mounted on respective shifting platforms 33,45. The mirror 34 is mounted on a beam steering platform 35, which is typically based on a galvanometer control platform or a two-axis fast beam steering platform as described in U.S. Patent Application Serial No. 11/472,325. U.S. Patent Application Serial No. Ser. The laser beam 26 is transmitted to the string of optical elements by a beam splitter, which is directed by the string of optical elements to focus the beam. Device 20 is configured as a "post-scan" system in which no optical components are present between mirror 34 and PCB 24. In this configuration, the field of view of the mirror is typically about ±3°. Unless otherwise indicated, the following description focuses on micromachining the PCB 24 using a laser beam. However, it should be understood that embodiments of the present invention can operate with substantially more than one laser beam simultaneously. The operator 23 operates the device 20 using a workstation 21 that includes a memory 25 and a processing unit (PU) 32. The PU 32 uses the instructions stored in the memory 25 to control various components of the device 20, such as the laser 22 and the translation and beam steering platforms. In addition to the operating platforms 33, 35, the PU 32 can also change the focus of the string of optical elements 30 when a particular hole is being machined in the portion 43. The holes are micromachined in selected regions 42 on top surface 36 of PCB 24. The inset 44 shows the portion 13 in more detail. 200800792 43 'There is an area 42 and an area surrounding the area.
在本發明之某些實施例中,一物體46位於區42下面,該物體 嵌於PCB 24中,因而PCB中存在位於物體上面之一層38及位於 物體下面之一層40。通常,還有其他嵌式物體接近物體46,且在 PCB 24中還可包含其他層,但爲清楚起見,在第1圖中未顯示該 等其他嵌式物體及層。物體46通常係一電路之一部分,且層38 及40用作基板,該電路即形成於該基板上。在一實施例中,物體 46係大致圓形之金屬焊墊,其直徑大致爲1〇〇微米。通常,層38 及40爲電介質,且由填充之環氧樹脂製成。在某些所揭示實施例 中,假定層38及40係由位於NJ之Ajin〇m〇t〇公司製 造之各種_。咖。累積膜(娜)中之一種製成,該等Ajin_t〇 累積膜(ABF)在此項技術中衆所習知,且將在下文中參照第2 圖及第3圖加以說明。在-實施例中’層38及4〇係由哪型abf 構造而成,且厚度大致爲35微米。然而,應瞭解,層%及4〇可 由適於構造印刷電路板之任何材料製成。例如,層%可包含一 ABF材料,而層40可包含FR4材料。 爲使PU 32可對準……田米目一卿源5〇之照明來昭 PCB ’輻射源50通常係-雷射二極體,其提供處於成像轄射波 之成像輻射。在某些實施例中’源、5〇包含發光二極體(: 通常係高亮度LED。若源5〇包含雷射二極體,則該源通常包含 點消除系統,例如-束光纖。另—選擇爲,或者另外,可如在 文中所述將該源選擇成具有短之相干長度。裝置Μ包含—第二 向色分束鏡52,其對光束波長透明並用作處於成像輕射波長之 200800792 大致50/50之分束鏡。在如下文所述之本發明之某些實施例中,分 束鏡52包含一偏振分束鏡。成像輻射經由一聚焦透鏡系統49藉 由分束鏡52傳遞,以便大體與光束26同轴。成像輻射自鏡34反 射,藉以使PCB 24處之成像輻射實質垂直於表面36。到達表面 36之成像輻射係配置成照亮一環繞並與區42鄰近之相對小之區 域,而非該表面上之一擴展區域,該區域通常係所正微加工之部 位之面積之大約四倍左右。例如,對於上文所述之100微米之實 例性焊墊,聚焦透鏡系統49可配置成在直徑大致爲200微米左右 之圓中提供成像輻射。 藉由將成像輻射配置成照亮一環繞要執行微加工之定位之相對 小之區域,可將高強度照明輻射高效地提供至該區域,藉以可産 生該區域之高品質影像。藉由經由裝置20中亦用於將微加工光束 26導向至所正微加工之區域之元件對成像輻射進行導向,當使裝 置20重新對準以對新之區域微加工時,高強度照明輻射會自動地 重新對準新之區域。此外,如下文所述,用於成像之返回輻射亦 經由裝置20中對光束26及腠明輻射進行導向之共用元件返回, 因而當使裝置20重新對準以微加工新之區域時,亦會對新之區域 自動成像。如在下文中所更詳細解釋,上述特徵組合使本發明實 施例能夠實質即時地使光束26對準其部位,由此提供PCB 24之 總體微加工速率。 來自部位43之返回輻射由鏡34經由分束鏡52反射至光學元件 串30,如由箭頭54所示意性顯示·,並自光學元件串傳送至分束鏡 28。串30經由分束鏡28及聚焦透鏡55並視需要經由一濾光片系 15 200800792 、、先53將返回輻射導向一光學感測器56,濾光片系統通常包含 一組可選濾光片,包括帶通濾光片及長通濾光片。如在下文中所 述,若部位43産生㈣㈣,可湘此—遽光片系統。對於存在 於部位43中之物體(例如物體46),感測器56用以根據物體之定 位向PU 32提供信號,且處理單元使用該等信號使光束%相對於 pCB 24及物體正確地對準及定向。將參照第5八、56及5匚圖對 感測56之運行予以更詳細說明。In some embodiments of the invention, an object 46 is located below the area 42 and the object is embedded in the PCB 24 such that there is a layer 38 on the substrate and a layer 40 below the object. In general, there are other inlaid objects that are close to the object 46, and other layers may be included in the PCB 24, but for the sake of clarity, such other embedded objects and layers are not shown in FIG. Object 46 is typically part of a circuit and layers 38 and 40 are used as substrates on which the circuitry is formed. In one embodiment, object 46 is a generally circular metal pad having a diameter of approximately 1 micron. Typically, layers 38 and 40 are dielectric and are made of filled epoxy. In certain disclosed embodiments, layers 38 and 40 are assumed to be manufactured by various companies manufactured by Ajin, Inc. of NJ. coffee. One of the cumulative films (A) is well known in the art and will be described below with reference to Figures 2 and 3. In the embodiment, the layers 38 and 4 are constructed of which type abf and have a thickness of approximately 35 microns. However, it should be understood that layers % and 4 can be made of any material suitable for constructing a printed circuit board. For example, layer % can comprise an ABF material and layer 40 can comprise an FR4 material. In order to align the PU 32 to the illumination of the field, the radiation source 50 is typically a laser diode that provides imaging radiation in the imaging ray. In some embodiments, the 'source, 5' includes a light-emitting diode (usually a high-brightness LED. If the source 5〇 contains a laser diode, the source typically includes a point-cancellation system, such as a beam of fiber. - Alternatively, or in addition, the source can be selected to have a short coherence length as described herein. The device Μ includes a second directional beam splitter 52 that is transparent to the beam wavelength and used as the imaging light wavelength 200800792 A 50/50 splitter mirror. In some embodiments of the invention as described below, the beam splitter mirror 52 includes a polarizing beam splitter mirror. The imaging radiation is passed through a focusing lens system 49 by a beam splitter 52. The imaging is generally coaxial with the beam 26. The imaging radiation is reflected from the mirror 34 such that the imaging radiation at the PCB 24 is substantially perpendicular to the surface 36. The imaging radiation reaching the surface 36 is configured to illuminate a surround and adjacent to the region 42. A relatively small area, rather than an extended area on the surface, which is typically about four times the area of the portion being micromachined. For example, for the 100 micron exemplary pad described above, focus Lens system 49 can be equipped Providing imaging radiation in a circle having a diameter of approximately 200 microns. By arranging the imaging radiation to illuminate a relatively small area surrounding the positioning where micromachining is to be performed, high intensity illumination radiation can be efficiently supplied to the area Thereby, a high quality image of the area can be produced. By directing the imaging radiation via elements of the device 20 that are also used to direct the micromachined beam 26 to the area being micromachined, when the device 20 is realigned, In the new area of micromachining, the high intensity illumination radiation is automatically realigned to the new area. Furthermore, as described below, the return radiation for imaging is also shared via the device 20 for directing the beam 26 and the illuminating radiation. The component returns so that when the device 20 is realigned to micromachine the new region, the new region is also automatically imaged. As explained in more detail below, the combination of features enables the embodiment of the present invention to substantially instantaneously beam the beam 26 is aligned with its location, thereby providing an overall micromachining rate of PCB 24. The return radiation from portion 43 is reflected by mirror 34 via beam splitter 52 to the optical element String 30, as indicated by arrow 54, is transmitted from the optical element string to beam splitter 28. String 30 is passed through beam splitter 28 and focusing lens 55 and optionally via a filter system 15 200800792, The return radiation is directed to an optical sensor 56, which typically includes a set of optional filters, including band pass filters and long pass filters. As described below, if portion 43 is produced (d) (d) In the case of an object (such as object 46) present in the portion 43, the sensor 56 is configured to provide a signal to the PU 32 based on the location of the object, and the processing unit uses the signal to cause the beam to be % The alignment and orientation of the sensing 56 will be described in more detail with respect to the pCB 24 and the object. The operation of the sensing 56 will be described in more detail with reference to Figures 5, 56 and 5.
在某些實施例中,源5G用於自部位43産生螢光返回韓射,以 尤其使自返回輻射形成之影像固有地不存在斑點。第10/793,224 號美國專利申請案即說明螢光影像之產生,其讓於本發明之受讓 人亚以引用方式倂人本文中。在此等情形中,源、50可較佳包含一 、大致405不米ji作之雷射二極體,且通常可不需要斑點消除系 統。此外,分束鏡52可較佳配置成二向色分束鏡,反射來自源% 之輕射並透射光束26及螢光返回輻射。較佳地,PU 32可用以調 整源5〇所産生之成像㈣之波長及/或功率 功率,可改變成料射穿透人部位43内之有效深度,藉以使榮= 幸田射所產生之&像可取佳化。若部位43包含—不發出螢光之物 體’例如金屬^螢絲射産生影像會增㈣像之反差。 由於士在下文中所解釋’部位43通常包含具有不同螢光特性之 層’因而P U 3 2及/或择作昌,2 ώ、泰 使影像最佳化。〃、可自慮光片組53中選取滤光片來 在某二财,m轉成具有對pcB實質透明之工作波 、或皮長#圍例如在下文中參照第2圖所給出之波長。在此種 16 200800792 情形中,通常對於至少部分呈鏡面之物體46,可反襯相對暗之背 景使物體成像爲亮之物體。當將相對長之源波長(例如在下文中 參照第2圖給出)與對該等波長相對透明之材料(例如SH9KABF 樹脂、GX3 ABF樹脂或GX13 ABF樹脂)一起使用時,便可産生 此種類型之「亮場」成像。 通常,PU 32使用平移台45對PCB 24執行粗略對準,並使用 平臺33及35執行精微對準,以使區42處於表面36上之所需位 置,並使光束26相對於該表面處於所需定向上。然而,亦可使用 平移平臺33、45及光束操控平臺35之操作之任何其他方便之組 合對光束26進行定位及定向。 爲使用光束26在PCB 24中微加工一孔,所加工之材料需要至 少部分地進行有效吸收,以吸收光束之能量。此種有效吸收可由 PCB樹脂在光束波長下對光束之吸收、或由包含於樹脂中之物體 (例如玻璃微粒或纖維)、或由嵌於PCB中之物體(例如物體46) 對光束之吸收來實現。另一選擇爲,或者另外,在上文所提及之 短脈衝雷射器情況下,對光束之有效吸收可藉由短脈衝與PCB樹 脂或所嵌入物體之非線性相互作用來實現。一般而言,由於微加 工係藉由燒蝕PCB之某些部分而起作用,因而微加工之效率隨對 光束之有效吸收之增加而提高。 諸多其他因素可影響裝置20在PCB 24中高效地進行微加工之 能力: •所要微加工之PCB部分在該光束波長下需要具有之有效吸收 性可限制在該光束波長下對表面36下面之物體(例如物體46)之 17 200800792 有效成像。 •裝置20之某些光學元件同時傳遞來自光源22之光束輻射與 來自源50之成像輻射。另外,若産生螢光輻射,則該等光學元件 亦可傳遞螢光輻射。該三種輻射具有不同之波長,且某些波長可 彼此迥異。在此等情形中,可較佳將裝置20之光學元件選擇成包 含反射元件、折射元件、或該二類型元件之組合、及/或例如衍射 元件等其他元件,藉以正確地傳送不同之波長。元件選擇對於此 項技術之一般技術人員將一目了然。 •對可爲光束選用之波長、以及對可爲成像輻射及螢光輻射(若 使用)選用之波長或波長範圍存在實際限值。 對光束及成像輻射波長之選取因該等及其他因素(包括PCB 24 之組成要素及物體46之光學特性)而異。因此,在本發明之某些 實施例中,將光束波長與成像輻射波長選擇成大致相同。對於該 等實施例,使成像輻射波長與光束波長相隔約50奈米或以下。在 其他實施例中,則將該二波長選擇成互不相同,使成像輻射波長 與光束波長相隔約100奈米或以上。對於螢光成像之情形,將成 像輻射波長選擇成能産生螢光,且PCB樹脂對成像輻射固有地存 在局部吸收性。 裝置20可用於在PCB 24中微加工多個孔,該等孔通常用於微 通路及/或盲通路。在微加工多個孔時所涉及到之步驟係:使光束 26與區42對準,穿過該區微加工出孔,並使光束重新對準具有所 要微加工之區之新部位。反覆地重複該過程。爲使該過程有效率 地進行,應盡可能快地執行光束之對準與重新對準。或者另外另 18 200800792 一選擇爲,可配置多組裝置20來實質上同時地微加工多個孔。在 本發明之一實施例中,18組裝置20被同時操作在PCB上。 在本發明之某些實施例中,裝置20包含一元件51。元件51之 功能將在下文中,參照第8圖加以說明。 第2圖係爲在不同波長下且樹脂厚度爲45微米時,不同類型 ABF樹脂之百分比透射之示意性曲線圖。 藉由檢查該曲線圖會發現,在大約350奈米波長下對應於雷射 器22所提供之波長,此時雷射器係為一 UV雷射器,SH9K ABF 樹脂透射大約20%,而GX3 ABF樹脂則具有高之吸收性。因此, 若層38係SH9KABF樹脂,則源50可與雷射器22具有大致相同 之波長,並自物體46産生返回輻射。若層38包含GX3ABF樹脂, 則爲獲得與在SH9K情況下相同或更多之返回輻射,源波長應大 約爲430奈米或以上。除第2圖之曲線圖所給出之透射因素以外, 其他會影響PCB及物體46之成像之因素包括照明輻射之漫射,其 因用於填充構成層38及40之環氧樹脂之玻璃珠之大小及密度而 異。 本發明之發明者已發現,在800奈米左右或以上之近紅外線波 長下,該二類型之樹脂皆實質透明。本發明之發明者還已發現, 若源50以該等波長工作,則無論嵌於層38及40中之珠所引起之 漫射如何,皆會形成所嵌入物體(例如物體46)之良好影像。 第3圖係爲不同樹脂類型之螢光之示意性曲線圖。對應於ABF 樹脂GX3、SH9K及GX13以及FR4材料之曲線繪示各該樹脂材 料之正規化螢光強度一螢光波長之關係。該等曲線係在激發波長 19 200800792 約爲300奈米時産生,但發明者已證實,在其他激發波長(包括 上文所例示之UV雷射器之350奈米之波長)下,亦會得到大致 類似之曲線。本發明之某些實施例使用第3圖中之曲線所示之螢 光特性來操作裝置20。例如,若層40 (第1圖)包含FR4樹脂, 且層38包含GX3樹脂,則可使用以約450奈米波長之工作帶通 濾光片、或者截止波長大約爲相同波長之長通濾光片來很好地區 分該二層。在觀察該二層之螢光時,可使用一更短波之帶通或長 通濾、光片。 第4圖係爲一流程圖60,其顯示根據本發明一實施例在操作裝 置20時所執行之步驟。 在使用裝置20進行微加工之前,首先將該裝置相對於PCB 24 作校準。該初始校準可以係標記一面板,例如一專用校準面板(不 同於PCB 24),使用裝置20對該等標記成像,並根據所成像之標 記來確定裝置之校準偏移量。在某些實施例中,可標記PCB 24之 一部分,並使用該等標記進行校準。 另一選擇爲,或者另外,如在下文中所更詳細說明,可有利地 使用第3圖中之曲線所示之螢光特性使裝置20對正。 下文對流程圖60中各步驟之說明係描述一種校準過程及一種微 加工製程。 在一第一校準步驟62中,操作員23將一專用校準面板或PCB 24 (若要使用該PCB進行校準)定位於平臺45上。操作員爲裝置 20提供校準目標座標(通常係2至4個校準目標之座標)以及在 校準面板中或在PCB 24中對應於該等目標之形狀。操作員可自電 20 200800792 腦輔助製造(CAM)檔案中提供目標座標及形狀,或者可由操作 員直接輸入。如上文所述,該等目標可配置成無損性的或有損性 的。另一選擇爲,校準面板或PCB 24可藉由機械方式進行定位, 通常係使用基準銷、拐角、或者面板或PCB中之其他機械基準區。 在一第二校準步驟64中,操作員操作裝置20之對正系統,以 對校準目標進行照明及定位。照明可來自源50,如上文所述,可 較佳選擇源50之成像輻射波長,以使返回輻射爲螢光輻射。還如 上文所述,PU 32可調整源50之波長及/或功率,以使所産生之影 像最佳。 另一選擇爲,或者另外,若使用校準目標之螢光,則可藉由以 低於PCB之燒蝕臨限值功率之功率操作雷射器22,來照明包含該 等目標之區。在此種情形中,可通常藉由以光學元件串30使光束 26散焦、以「區域照明」模式操作雷射器22來照明該區。另一選 擇爲,可藉由使用光束操控平臺35掃描鏡34,並由此掃描雷射光 束來執行區域照明模式。校準目標在感测器56上成像,且PU 32 使用在感測器上所形成之目標影像來校準裝置20。若使用螢光, 則PU 32及/或操作員23可選擇濾光片組53中之一濾光片來使所 形成之影像最佳化一通常在層38及40包含例如上文所述之不同 樹脂之情況下,且如在對第3圖之說明中所例示。 下面之步驟假定已使用PCB 24進行校準,且該PCB在裝置20 中就位。在下面之步驟中,以舉例方式,假定物體46爲一孤立之 近似圓形之焊墊,且要穿過焊墊之中心並垂直於表面36微加工一 孔。此項技術之一般技術者將能夠針對其他類型之物體46 (例如 21 200800792 連接至矩形導體或連接至一相連之圓形焊墊陣列之圓形焊墊)在 細節上對該流程圖中各步驟之說明作必要修正。 在一第一微加工步驟65中,操作員23將對應於在PCB 24中所 構建電路之CAM檔案裝載入記憶體25内。 在一第二微加工步驟66中,PU 32使用CAM檔案來確定形狀 及該形狀之名義座標,其中要微加工一孔。在下文說明中,假定 要在物體46之中心上微加工一孔,因而該等名義座標可爲物體46 或包含該物體之部位43之名義座標。另一選擇爲,可藉由分析電 路之影像來得到物體46之名義座標及形狀,該分析係由操作員23 及/或PU 32執行。 在一第三微加工步驟68中,PU 32使用對應於名義座標之一信 號來向固定PCB 24、光學元件串30、及/或鏡34之各運動平臺提 供粗略調整控制信號,以使物體46移入感測器56之視野内。此 種定位可由處理單元完全自動地執行。或者,操作員23通常可藉 由將名義座標提供至PU 32,至少部分地執行此種定位,。 自步驟68開始,PU 32遵循二可能路徑之一。第一路徑69係經 由光束對正步驟70及72到達物體照明步驟74。第二路徑71則直 接到達物體照明步驟7 4。當首先操作流程圖6 0並隨後定期地操作 流程圖60時,PU 32遵循第一路徑69,因而在步驟70及72中所 執行之光束對正並非對所微加工之每一物體皆執行。而是,間歇 性地每t秒執行一次光束對正,其中t係由操作員23選取之參數, 且通常約爲10左右。 在路徑69中,在第一光束對正步驟70中,以低於燒蝕臨限值 22 200800792 之低力率操作雷射器22,並射到部位43上。雷射光束通常在其射 到部位43上之處(此處假定爲ϋ 42)激發螢光,在此種情形中, 返回勞光輕射聚焦於感測器56上而在感測器上形成區42之影 像。另一選擇爲,可並非使用pCB之螢光,而是之前已在部位43 上附加一燒蝕校準板。 在路徑69中,在第二光束對正步驟72中,PU 32記錄雷射光束 在感測器5 6上之定位。In some embodiments, the source 5G is used to generate fluorescence from the portion 43 back to the Korean shot, in particular such that the image formed from the return radiation is inherently free of spots. The production of fluorescent images is described in U.S. Patent Application Serial No. 10/793,224, the disclosure of which is incorporated herein by reference. In such cases, the source 50 may preferably comprise a laser diode of approximately 405 Å, and generally does not require a speckle removal system. In addition, the beam splitter 52 can preferably be configured as a dichroic beam splitter that reflects light from the source and transmits the beam 26 and the fluorescent return radiation. Preferably, the PU 32 can be used to adjust the wavelength (or wavelength) and/or power power of the imaging (4) generated by the source 5, and can change the effective depth of the penetration into the human portion 43 so that the glory is generated by Koda ; like the best. If the portion 43 contains - an object that does not emit fluorescence, such as a metal ray, the image will increase the contrast of the image. As explained below, the 'site 43 usually contains layers having different fluorescent characteristics' and thus P U 3 2 and/or Optima, 2 ώ, and Tai are optimized. Alternatively, the filter may be selected from the self-considered light film group 53 to convert to a wavelength having a working wave substantially transparent to the pcB, or a skin length #, for example, hereinafter referred to in Fig. 2. In the case of such a 16 200800792, generally for at least partially mirrored objects 46, the relatively dark background can be contrasted to image the object as a bright object. This type can be produced when a relatively long source wavelength (as given hereinafter in Figure 2) is used with materials that are relatively transparent to such wavelengths, such as SH9KABF resin, GX3 ABF resin or GX13 ABF resin. "Light field" imaging. Typically, the PU 32 performs a coarse alignment of the PCB 24 using the translation stage 45 and performs fine alignment using the stages 33 and 35 such that the area 42 is at the desired location on the surface 36 and the beam 26 is in a position relative to the surface. Need to be oriented. However, the beam 26 can also be positioned and oriented using any other convenient combination of translational stages 33, 45 and operation of the beam steering platform 35. To micromachine a hole in the PCB 24 using the beam 26, the material being processed needs to be at least partially absorbed effectively to absorb the energy of the beam. Such effective absorption can be absorbed by the PCB resin at the beam wavelength, or absorbed by an object contained in the resin (such as glass particles or fibers), or by an object embedded in the PCB (such as object 46). achieve. Alternatively, or in addition, in the case of the short pulse lasers mentioned above, the effective absorption of the beam can be achieved by a short pulse with a nonlinear interaction of the PCB resin or the embedded object. In general, since microprocessing works by ablating certain portions of the PCB, the efficiency of micromachining increases as the effective absorption of the beam increases. A number of other factors can affect the ability of device 20 to efficiently perform micromachining in PCB 24: • The portion of the PCB to be micromachined needs to have effective absorption at the beam wavelength to limit the object below surface 36 at the wavelength of the beam. (eg object 46) 17 200800792 Effective imaging. • Certain optical components of device 20 simultaneously transmit beam radiation from source 22 and imaging radiation from source 50. In addition, if fluorescent radiation is generated, the optical elements can also transmit fluorescent radiation. The three types of radiation have different wavelengths, and some of the wavelengths can be different from each other. In such cases, the optical elements of device 20 may preferably be selected to include reflective elements, refractive elements, or combinations of the two types of elements, and/or other elements such as diffractive elements, to properly transmit different wavelengths. Component selection will be apparent to those of ordinary skill in the art. • There are practical limits for the wavelengths that can be selected for the beam, and for wavelengths or wavelength ranges that can be selected for imaging and fluorescent emissions (if used). The choice of beam and imaging radiation wavelengths will vary depending on these and other factors, including the components of the PCB 24 and the optical properties of the object 46. Thus, in some embodiments of the invention, the beam wavelength is selected to be substantially the same as the imaging radiation wavelength. For these embodiments, the imaging radiation wavelength is separated from the beam wavelength by about 50 nanometers or less. In other embodiments, the two wavelengths are selected to be different from one another such that the imaging radiation wavelength is about 100 nanometers or more from the beam wavelength. In the case of fluorescent imaging, the imaging radiation wavelength is selected to produce fluorescence, and the PCB resin inherently has local absorption for imaging radiation. Device 20 can be used to micromachine a plurality of holes in PCB 24, which are typically used for microvias and/or blind vias. The steps involved in micromachining a plurality of holes are to align beam 26 with region 42, through which the holes are micromachined and the beam realigned to a new portion of the region having the desired micromachining. Repeat the process over and over again. In order for this process to proceed efficiently, the alignment and realignment of the beam should be performed as quickly as possible. Alternatively, another 2008 200800792 may be selected to configure a plurality of sets of devices 20 to micromachine a plurality of holes substantially simultaneously. In one embodiment of the invention, 18 sets of devices 20 are simultaneously operated on a PCB. In some embodiments of the invention, device 20 includes an element 51. The function of the element 51 will be described below with reference to Fig. 8. Figure 2 is a schematic plot of the percent transmission of different types of ABF resins at different wavelengths and with a resin thickness of 45 microns. By examining the graph, it is found that at a wavelength of about 350 nm, which corresponds to the wavelength provided by the laser 22, the laser is a UV laser, and the SH9K ABF resin transmits about 20%, while the GX3 ABF resin has high absorbency. Thus, if layer 38 is a SH9KABF resin, source 50 can have substantially the same wavelength as laser 22 and produce return radiation from object 46. If layer 38 comprises a GX3ABF resin, the source wavelength should be about 430 nm or more in order to obtain the same or more return radiation as in the case of SH9K. In addition to the transmission factors given in the graph of Figure 2, other factors that affect the imaging of the PCB and object 46 include the diffusion of illumination radiation due to the glass beads used to fill the epoxy of the layers 38 and 40. The size and density vary. The inventors of the present invention have found that both types of resins are substantially transparent at near infrared wavelengths of about 800 nm or more. The inventors of the present invention have also discovered that if source 50 operates at these wavelengths, a good image of the embedded object (e.g., object 46) will be formed regardless of the diffusion caused by the beads embedded in layers 38 and 40. . Figure 3 is a schematic plot of fluorescence for different resin types. The curves corresponding to the ABF resins GX3, SH9K, GX13, and FR4 materials show the relationship between the normalized fluorescence intensity and the fluorescence wavelength of each of the resin materials. These curves are generated at an excitation wavelength of 19 200800792 of approximately 300 nm, but the inventors have confirmed that at other excitation wavelengths (including the 350 nm wavelength of the UV lasers exemplified above), A roughly similar curve. Some embodiments of the present invention operate the device 20 using the fluorescent characteristics shown in the graph of Figure 3. For example, if layer 40 (Fig. 1) contains FR4 resin and layer 38 comprises GX3 resin, a working band pass filter having a wavelength of about 450 nm or a long pass filter having a cutoff wavelength of about the same wavelength can be used. The film is a good part of the second layer. When observing the fluorescent light of the second layer, a shorter band pass or long pass filter or a light sheet can be used. Figure 4 is a flow chart 60 showing the steps performed in operating device 20 in accordance with an embodiment of the present invention. Prior to micromachining using device 20, the device is first calibrated relative to PCB 24. The initial calibration can be labeled with a panel, such as a dedicated calibration panel (different from PCB 24), which is imaged using device 20 and determines the calibration offset of the device based on the imaged mark. In some embodiments, a portion of the PCB 24 can be marked and calibrated using the markers. Alternatively, or in addition, as will be explained in more detail below, the device 20 can be aligned using the fluorescent characteristics shown by the curves in Figure 3. The following description of the various steps in flowchart 60 describes a calibration process and a micromachining process. In a first calibration step 62, the operator 23 positions a dedicated calibration panel or PCB 24 (to be calibrated using the PCB) on the platform 45. The operator provides the device 20 with a calibration target coordinate (typically a coordinate of 2 to 4 calibration targets) and a shape corresponding to the targets in the calibration panel or in the PCB 24. The operator can self-power 20 200800792 The target coordinates and shape are provided in the brain assisted manufacturing (CAM) file or can be entered directly by the operator. As noted above, such targets can be configured to be non-destructive or lossy. Alternatively, the calibration panel or PCB 24 can be mechanically positioned, typically using a reference pin, a corner, or other mechanical reference zone in the panel or PCB. In a second calibration step 64, the operator operates the alignment system of device 20 to illuminate and position the calibration target. Illumination can be from source 50, and as described above, the wavelength of the imaging radiation of source 50 can be preferably selected such that the return radiation is fluorescent radiation. As also described above, the PU 32 can adjust the wavelength and/or power of the source 50 to optimize the resulting image. Alternatively, or in addition, if fluorescence of the calibration target is used, the region containing the targets can be illuminated by operating the laser 22 at a power below the ablation threshold power of the PCB. In such a case, the region can be illuminated typically by defocusing the beam 26 with the optical element string 30 and operating the laser 22 in a "area illumination" mode. Alternatively, the area illumination mode can be performed by scanning the mirror 34 using the beam steering platform 35 and thereby scanning the laser beam. The calibration target is imaged on sensor 56 and PU 32 calibrates device 20 using the target image formed on the sensor. If fluorescence is used, the PU 32 and/or the operator 23 may select one of the filters 53 to optimize the formed image. Typically, the layers 38 and 40 comprise, for example, the above. In the case of different resins, and as illustrated in the description of Figure 3. The following steps assume that the PCB 24 has been calibrated and that the PCB is in place in the device 20. In the following steps, by way of example, object 46 is assumed to be an isolated, approximately circular pad, and a hole is micromachined perpendicular to surface 36 through the center of the pad. Those of ordinary skill in the art will be able to detail the steps in the flow chart for other types of objects 46 (e.g., 21 200800792 connected to a rectangular conductor or a circular pad connected to an array of connected circular pads). The description is made as necessary. In a first micromachining step 65, the operator 23 loads the CAM files corresponding to the circuits built in the PCB 24 into the memory 25. In a second micromachining step 66, the PU 32 uses the CAM archive to determine the shape and the nominal coordinates of the shape in which a hole is to be micromachined. In the following description, it is assumed that a hole is to be micromachined at the center of the object 46, and thus the nominal coordinates may be the nominal coordinates of the object 46 or the portion 43 containing the object. Alternatively, the nominal coordinates and shape of the object 46 can be obtained by analyzing the image of the circuit, which is performed by the operator 23 and/or the PU 32. In a third micromachining step 68, the PU 32 provides a coarse adjustment control signal to each of the fixed PCB 24, optical element string 30, and/or mirror 34 motion stages using signals corresponding to one of the nominal coordinates to cause the object 46 to move in. Within the field of view of sensor 56. This positioning can be performed completely automatically by the processing unit. Alternatively, operator 23 can generally perform such positioning at least in part by providing nominal coordinates to PU 32. Beginning at step 68, PU 32 follows one of the two possible paths. The first path 69 reaches the object illumination step 74 via beam alignment steps 70 and 72. The second path 71 then directly reaches the object illumination step 74. When the flowchart 60 is first operated and then the flowchart 60 is periodically operated, the PU 32 follows the first path 69, and thus the beam alignment performed in steps 70 and 72 is not performed for each object being micromachined. Rather, beam alignment is performed intermittently every t seconds, where t is the parameter selected by operator 23 and is typically about 10. In path 69, in the first beam alignment step 70, the laser 22 is operated at a low force rate below the ablation threshold 22 200800792 and onto the location 43. The laser beam typically excites the phosphor at its location on the site 43 (here assumed to be ϋ 42), in which case the returning light beam is focused on the sensor 56 and formed on the sensor. Image of area 42. Alternatively, instead of using pCB phosphor, an ablation calibration plate has been previously attached to portion 43. In path 69, in a second beam alignment step 72, PU 32 records the position of the laser beam on sensor 56.
在物體照明步驟74中,pU 32關閉雷射器22,並操作源5〇| 物體46進行知明。另一選擇爲,或者另外,在步驟%中, 可使田射$ 22保持低功率及/或上文所述之區域照明模式。通常 剛2使用在物體46附近自pcB產生之返回螢光輻射來形成在] 步驟76中所述之影像。螢光輻射可由雷射器22及/或源5〇之幸 射産生。扣像可由返回螢絲射單㈣成、或者與處於源心 波長之返回輪射_同形成。通常,例如對於上文所述之包含不^ 樹脂類型(例如ABF及FR4)之層38及4〇之實例而言,在爲交 回螢光輻射之情形中,pU32自濾、光片組53中選擇—濾 影像最佳化。 在物體記錄步驟76中,PU32記錄在感測器%中產生之物覺 像。PU 32分析來自感測器56之信號電平,以確定對應於中< I座標之信號。此種分析之—實例將參照第56&5(:圖加以說 若已遵循路杈69,則處理單元記錄並確定圓形焊墊中心之實咳 ‘兵在步驟72中得到之光束位置間之偏移量。㈣已遵循鲜 則處理單几使用在路徑69之最新執行中所得到之偏移量。 23 200800792 在運動步驟78中,PU 32使用在步驟76中所確定之偏移量、相 對於物體46之中心來調整光束位置。通常,藉由操作光束操控平 臺35以正確對準鏡34來完成該調整。 在操作雷射器步驟80中,PU 32將源22之功率切換成高於燒蝕 臨限值,以使光束燒蝕層38及物體46,並由此在物體46之中心 之實際座標處微加工出一孔。在某些實施例中,在微加工期間, 處理單元還可隨著微加工之進行,使用光學元件串30改變光束26 之焦點。 在第一判決步驟82中,PU 32檢查是否要在PCB 24上對該PCB 之其他部位執行之進一步微加工操作。若不存在其他操作,則流 程圖60結束。若存在其他操作一在此處假定係要在實質類似於物 體46之物體之中心處加工孔,則流程圖60繼續進行至第二判決 步驟84。 在第二判決步驟84中,PU 32判定物體46距所要加工之下一物 體之名義位置之距離是否大於一預設距離(通常爲10毫米左右)。 若該距離大於預設距離,則將計數器N設定爲0,且該流程返回 步驟66來加工下一物體。 若該距離小於或等於預設距離,則在第三判決步驟86中,PU 32 檢查在步驟76中所記錄之偏移量是否小於一預設值。若該偏移量 小於預設值,則在步驟88中,PU 32藉由對下面的N個物體執行 步驟78及80來操作裝置20,其中N係上面所提及之計數器,且 其中N設定爲通常約爲10之一預定值。操作員23可在步驟65中 裝載CAM檔案時設定該預定值N。 24 200800792 在執行步驟88之同時,PU 32在每一加工操作後皆檢查各物體 間之距離是否超過預設距離,在此種情形中,該流程返回步驟66, 如流程圖中之虛線67所示。若在加工該N個物體時不超過該預設 距離,則PU 32完成對該N個物體之加工,使N遞增,並隨後使 流程返回步驟66。 若在判決步驟86中該偏移量大於或等於預設值,則PU 32使N 遞減至最小值0。在步驟90中,PU 32藉由對下面之N (遞減後 之值)個物體執行步驟78及80來操作該裝置。在執行步驟90之 同時,PU 32在每一加工操作後,皆檢查各物體間之距離是否超過 預設距離,在此種情形中,該流程返回步驟66,如流程圖中之虛 線73所示。若在加工該N個物體時不超過該預設距離,則PU 32 完成對該N個物體之加工,並隨後使流程返回步驟66。 判決步驟84使操作員23能夠將裝置20配置成可在不執行對正 步驟之情況下,加工處於一已被執行對正步驟66-76之物體之預 設距離以内之各物體。換言之,使用針對一給定物體確定出之偏 移量爲靠近該給定物體之物體群組確定光束位置。 判決步驟86使操作員能夠將裝置配置成使在步驟76中得到之 偏移量之大小決定在上面所述之群組中有多少物體。因此,若所 確定之偏移量低於預設偏移量,則對所要加工之下一物體群組遞 增N之值(群組中之物體數量)。而若所確定之偏移量大於預設偏 移量,則對所要加工之下一.物體群組遞減N之值。 操作員通常在步驟65中輸入預設距離及預設偏移量之值。 以上說明適用於穿過圓形焊墊之中心垂直於表面36微加工一圓 25 200800792 形孔。裝置20亦可執行其他微加工操作,例如非垂直地微加工一 孔,及/或微加工一非圓形孔,例如呈狹縫形狀之孔,及/或在不同 於與流程圖60中所確定實際座標相對應之位置處微加工_ . 札。亦 應瞭解,可採用微加工來形成完全穿透PCB之孔,或者並不&八 穿透PCB之孔。此項技術之一般技術者將能夠針對此等其他微力 工操作來修改以上說明,通常係藉由使處理單元在步驟Μ及肋In the object illumination step 74, the pU 32 turns off the laser 22 and operates the source 5 〇 | object 46 for knowledge. Alternatively, or in addition, in step %, field shot $22 can be maintained at low power and/or the area illumination mode described above. The image as described in step 76 is typically formed using the return fluorescent radiation generated from pcB near object 46. Fluorescent radiation can be generated by the laser 22 and/or source 5 幸. The button image can be formed by returning the filament (four), or with the returning ray at the source wavelength. Typically, for example, for the examples of layers 38 and 4, including the types of resins (e.g., ABF and FR4) described above, in the case of reversing fluorescent radiation, pU32 self-filtering, light sheet set 53 Medium selection—filter image optimization. In the object recording step 76, the PU 32 records the object image generated in the sensor %. The PU 32 analyzes the signal level from the sensor 56 to determine the signal corresponding to the middle < I coordinate. An example of such an analysis will be referred to in paragraphs 56 & 5 (the figure states that if the path 69 has been followed, the processing unit records and determines the position of the beam obtained in step 72 by the solid cough of the center of the circular pad. Offset. (d) The offsets obtained in the latest execution of path 69 have been followed. 23 200800792 In motion step 78, PU 32 uses the offset determined in step 76, relative The beam position is adjusted at the center of the object 46. Typically, this adjustment is accomplished by operating the beam steering platform 35 to properly align the mirror 34. In operating the laser step 80, the PU 32 switches the power of the source 22 above. The ablation threshold is such that the beam ablate layer 38 and object 46, and thereby a hole is micromachined at the actual coordinate of the center of object 46. In some embodiments, during micromachining, the processing unit also The focus of beam 26 can be varied using optical element string 30 as the micromachining proceeds. In a first decision step 82, PU 32 checks if further micromachining operations are to be performed on other portions of the PCB on PCB 24. There are no other operations, then Flowchart 60 ends. If there are other operations - it is assumed here that the hole is to be machined at the center of the object substantially similar to object 46, flow chart 60 proceeds to second decision step 84. In a second decision step 84 , the PU 32 determines whether the distance of the object 46 from the nominal position of an object to be processed is greater than a predetermined distance (usually about 10 mm). If the distance is greater than the preset distance, the counter N is set to 0, and the The flow returns to step 66 to process the next object. If the distance is less than or equal to the preset distance, then in a third decision step 86, the PU 32 checks if the offset recorded in step 76 is less than a predetermined value. If the offset is less than the preset value, then in step 88, the PU 32 operates the device 20 by performing steps 78 and 80 on the following N objects, where N is the counter mentioned above, and wherein N is set to Typically, it is a predetermined value of about 10. The operator 23 can set the predetermined value N when loading the CAM file in step 65. 24 200800792 While performing step 88, the PU 32 checks each object after each processing operation. Distance is Exceeding the preset distance, in this case, the flow returns to step 66, as indicated by the broken line 67 in the flowchart. If the predetermined distance is not exceeded when the N objects are processed, the PU 32 completes the N The processing of the object increments N and then returns the flow to step 66. If the offset is greater than or equal to the preset value in decision step 86, PU 32 decrements N to a minimum value of zero. In step 90, PU 32 operates the device by performing steps 78 and 80 on the following N (decreasing values) objects. While performing step 90, PU 32 checks whether the distance between objects exceeds each processing operation. The preset distance, in this case, the flow returns to step 66 as indicated by the dashed line 73 in the flow chart. If the predetermined distance is not exceeded when the N objects are processed, the PU 32 completes processing of the N objects and then returns the flow to step 66. Decision step 84 enables operator 23 to configure device 20 to process objects within a predetermined distance of an object that has been subjected to alignment steps 66-76 without performing a alignment step. In other words, the beam position is determined using a set of objects determined for a given object as a group of objects near the given object. Decision step 86 enables the operator to configure the device such that the magnitude of the offset obtained in step 76 determines how many objects are in the group described above. Therefore, if the determined offset is lower than the preset offset, the value of N (the number of objects in the group) is incremented for a group of objects to be processed. And if the determined offset is greater than the preset offset, the value of N is decremented for the group of objects to be processed. The operator typically enters a preset distance and a preset offset value in step 65. The above description applies to micromachining a circle 25 200800792 shaped holes through the center of the circular pad perpendicular to the surface 36. Device 20 can also perform other micromachining operations, such as non-perpendicular micromachining of a hole, and/or micromachining of a non-circular hole, such as a slit-shaped hole, and/or different from flow chart 60. Determine the micro-machining at the position corresponding to the actual coordinate _ . It should also be appreciated that micromachining may be used to form a hole that completely penetrates the PCB, or that does not penetrate the hole of the PCB. The general practitioner of this technology will be able to modify the above description for these other micro-manipulation operations, usually by having the processing unit in step and rib
中對平移平臺33、平移平臺45、及/或光束操控平臺%執行進一 步之操作來實現。 通常,對應於步驟68之粗略對準若自動執行,則自前一微加工 之孔起耗用大約1_3毫秒。若光束操控平臺35 (第丨圖)係基於 檢流=,則通常適用較短之時間,而若該平臺係二軸式掃描系統, ¥適用較長之時間。較佳地,上文在步驟78中所述之精微對 準程序耗用不到大約丨毫秒。之所以能實現該等㈣,主要係因 爲射向所微加工之每一部位之成像輻射具有高之強度。 匙明者已發現,該等時間與並不採用流程6〇中之步驟進行此種 力 , ^ · 口工之先珂技術系統相比,在採用流程6Q來加工pCB時,實質上 不存在時間損失。此外,可在加卫pCB期間執行例如判決步驟84 及86等步驟。因此,可將流程6〇實施成實質即時地操作。藉由 以所述時間進行操作,便可消除例如熱漂移等相對長期之不利效 應。而且,藉由如上文所述僅間歇性地執行對正步驟7〇及72,會 縮短總操作時間,而不會影響微加工之精度。 第5A圖顯示根據本發明一實施例,可用於裝置中之光學感 測裔56之一表面之示意圖。通常,爲在上面給出之對準時間中産 26 200800792 生對準信號,感測器56使用互補金屬氧化物半導體(CMOS )技 術。另一選擇爲,感測器56可包含一個或多個CCD (電荷搞合器 件)、或其他適當之感測器件。 一圖式164圖解說明感測器56之表面。感測器56通常包含一 矩形之偵測元件陣列。下面說明適合之影像感測器之某些實 例。位於 Boise,Idaho 之 Micron Technology 公司提供一種 MTM001 CMOS BO萬像素之矩形陣列感測器,本發明之發明者發現此種感 測裔即適合。可使用一可程式化之關注區域(Λ0Ι)來限制感測器 中所定址之元件數量,藉以使該陣列能夠用於1-3毫秒左右之短 之採集時間。R · 日本之Hamamatsu Photonics Κ·Κ·公司提供一種 256X256偵測元件S9132陣列,其可作爲兩個一維陣列使用,並給 出總和輸I切在下文中予以更詳細說明。此項技術之一般技 術者將熟悉適合用作感測器56之其他陣列。 PU 32可有利地使用來自元件170之信號,以精確地確定關於物 體46之特定位置。第5Β及5C圖顯示物體46之影像之實例。舉 例而"假定物體46包含一圓形焊墊,且要微加工該圓形焊墊之 中“在第5Β圖中,物體恥包含一孤立之近似圓形之垾墊,其 産生影像166。在第5C圖中,物體46包含連接至矩形導體之一 近似圓$之焊塾,其産生由—圓形部分178連接至-矩形部分180 而構成之影像176。 若感測器56包含由各單獨像素形成之矩形陣列(例如上面提及 之MlCIOn陣列),貝對於影像⑽,PU 32可將所要分析之像素 數里減乂至%繞影像166之一矩形像素集合168,減少像素數量會 27 200800792 縮短對影像之採集時間。PU 32可然後將所有成像像素擬合至一個 圓一通常係使用邊緣偵測演算法來進行,以便以子像素精度識別 影像166之中心。 例如,藉由使用130萬像素中之100x100個像素,與30赫茲之 名義訊框速率相比,可將影像採集時間改善接近100倍,藉以提 供亞毫秒之採集時間。如此短之採集時間需要具有高之影像照明 強度,此係由來自源50之定向部位照明經由鏡34 (第1圖)來提 供。 對於影像176, PU 32可將所要分析之像素數量減少至環繞部分 178之一矩形像素集合179 (可能去除矩形部分180中之某些像 素)。藉助一種邊緣偵測演算法,PU 32可然後將形成一非線性邊 緣之成像像素擬合至一個圓,以便以子像素精度識別圓形部分178 之中心。另一選擇爲,PU 32可使用邊緣偵測演算法將所有像素擬 合至一預期之理論邊緣,該理論邊緣係由一個圓與位於該圓一側 上之二平行線相交而産生的。 通常,PU 32選擇進行分析之像素並不需要爲簡單之矩形陣列。 例如,成像部位可包含附連至一大圓形焊墊之小圓形焊墊,在此 種情形中,PU 32所選之像素可配置成爲剛好囊括該部位所選之通 常不規則之像素集合。 感測器56可包含一可並不給出陣列中每一像素之輸出之陣列, 例如上文所提及之Hamamatsu陣列。在此種情形中,PU 32可對 該陣列之總和輸出應用曲線擬合,以找到影像166及178之中心。 第6圖係爲根據本發明一替代實施例之一光束對準裝置320之 28 200800792 示意圖。除下文所述之區別外,裝置320之操作大體類似於裝置 20 (第1圖)之操作,且裝置20與320中由相同參考編號所表示 之元件在構造及操作方面大體類似。 裝置320包含一分束鏡326,且去除了分束鏡52。分束鏡326 用以透射來自源50之成像輻射,並將自部位43返回之輻射反射 至感測器56。若返回輻射具有與源50之輻射相同之波長,則分束 鏡可爲一 50/50分束鏡。若返回輻射係螢光輻射,則分束鏡326 ^ 可配置成一二向色分束鏡。另一選擇爲,如下文所述,分束鏡326 可爲一偏振分束鏡。 在裝置320中,光學元件串30分離成二組光學元件。第一組324 通常包含可移動之光學元件,其可用於改變來自源22之光束之放 大率。第二組322通常包含固定之光學元件。藉由將光學元件串 30分成該二組,可在不影響照明以及分束鏡28與鏡34間之成像 路徑之情況下調整來自源22之光束之放大率。 下面將說明裝置320中之元件323及325。 φ 若裝置320中所提供之法向成像照明在部位43上大體均勻,即 若該照明幾乎不或根本不存在任何結構,則鏡面物體46所得到之 影像通常係該物體之亮影像反襯一環繞該物體之區之暗背景影 像,且該二影像具有良好之反差。 考量裝置20與320之後便會發現,例如可操控之鏡34及光學 元件串30等光學元件可傳遞至少二種不同之波長,即光束26之 光束波長與源50之成像輻射波長。若使用螢光,則該等光學元件 可傳遞三種不同之波長,即光束波長、成像輻射波長、以及螢光 29 200800792 波長。將同一些元件配置成傳遞二或三種不同之波長會顯著減少 若對不同波長分別使用單獨一組元件時可能需要之光學元件之數 量。 第7圖係爲根據本發明又一替代實施例之光束對準裝置330之 示意圖。除下文所述之區別外,裝置330之操作大體類似於裝置 20 (第1圖)及裝置320 (第7圖)之操作,且裝置20、320與 330中由相同參考編號所表示之元件在構造及操作方面大體類似。 裝置330在鏡34與部位43間包含一透鏡系統336。透鏡系統 336通常包含一遠心透鏡,其使鏡34能夠具有約±20°之FOV。增 加該透鏡系統便會將裝置330配置成一「預掃描」系統。與上文 所述之後掃描系統相比,鏡之FOV愈大,便能使鏡將光束26投 射至PCB 24中愈大之區域上並對該區域成像。 光學元件組324及322通常分別重新配置成包含可移動元件之 第一組334以及包含固定元件之第二組332,組334與組332經過 選擇以適應於透鏡系統336。 上文對裝置20、320及330之說明係假定成像照明大體垂直於 表面36,且總體上未結構化。而在下文所述之本發明之某些實施 例中,亦可將成像照明配置成使該照明具有結構,如下文所述。 第8圖圖解說明根據本發明一實施例由源50提供之成像輻射配 置344。圖中顯示在輻射配置344情況下,PCB 24之剖面圖340 及俯視圖342。在配置344中,表面36上之成像輻射被結構化成 例如一大體圓環346形狀之成像輻射。該成像輻射穿透層38及 40,且還因該等層内之漫射而在該等層内局部散射,例如主要因 30 200800792 包含於該等層中之填充材料而引起。穿透與局部散射相結合會有 效地「自背面照明」物體4 6,如由箭頭3 4 8所示意性地顯示,由 此在感測器56上形成一高反差影像。無論物體恥是否係鏡面, 皆會産生高反差影像。此外’藉由背面照明所形成之高反差影像 會有效地補償可能因在該等層内之㈣漫射而造成之影像模糊。 而假如不使用背面照明絲’影像_可在影像之關量位置上 造成偏差。 可精由將一元件51 ( (通㊉爲止擋件)置於透鏡49與 分束鏡52間,以在裝置2〇中有利地提供輕射配置344。儘管爲清 楚起見在圖中未顯示’然而亦可藉由將—適#之止播件置於透鏡 Μ與分束鏡28間,以在裝置嫌中提供配置344。其他用於在裝 、320及330中形成圓環狀輻射之方法(例如使用爲得到結 構化照明岐狀衍射元件),對於此項技術之—般技術者而言將 目了然,且認爲亦包含於本發明之料I例如,元件5】可包 元件·。源料_他形紅結構化㈣,該照明通 韦係根據所成像之部位來結構化。例如,可使用—矩形之 :明=致直線狀迹線周圍之區域。所有此等形式之結構;;= 白被岭爲仍包含於本發明之範疇内。 、、 爲得到配置344,可將源5G選擇成—具有極 發射器,以便實曾尤"L 丁城之雷射 加工物體尺寸發明者已發現,相干長度約爲所 於此寸(例如81料塾之直徑)之Μ倍之雷射器便適合 重新參見第6圖, 一替代輻射配置使用偏振照明輻射。如在第6 31 200800792 冬偏振态323置於源50之後,並將一分析儀 置於感測器56之前。里、登探含 ^ 5 另一遠擇爲,由於源50通常提供偏振輻射, 因而可無而使用偏振器323。偏振器323之定向、或源5G (若盆 輕射係偏振的)之定向、以及分析儀325之定向可由Pu 32 控制。另-選擇爲,該料向可由操作員23預設成大 ^ 表面36及PCB 94今丄β日士 心〈值。 0之中間表面(例如層38與層40間之介面、 反射貫際上與低人射角之入射偏振輻射具有相同之偏振。來自声 向回散射輻射相對較弱,且主要在與人射偏振輻射相同 ^爲改盖物靜然而’若物體46具有甚至―局部粗糙之金屬表面 " 與其嵌入樹脂間之黏著性,通常會如此),其所反射 之幸田射κ質上破消偏振,因而具有與入射偏振輕射呈⑽。夾角之分 f。在此處^述之替代配置中’卩㈣將偏振器奶與分析儀奶 ,又置成具有乂又之偏振,或者操作貝23股該等定向,以使來自 該等表面及層38和4G内側之鏡面反射被吸收,而來自物體如之 被消偏振之輻射則透射過。交叉之偏振由此提供物體46之與物體 周圍材料具有高反差之良好影像。 在用於使照明韓射偏振之-替代實施方案中,既不使用偏振器 323’亦不使用分析儀325。而是,將源5〇構建成提供偏振照明, 且將分束鏡326配置成-能透射來自—之偏減日狀偏振分束 鏡。該偏振分束鏡用以將被消偏振之㈣(包含來自物體46之輕 射)反射至感測器56’由此如上文所迷形成物體之良好影像。 重新參見第1圖,可在源5G之波長下將分束鏡52配置成一偏 振分束鏡’以使裝置2〇中^«56所形成之物體歡影像實 32 200800792 質類似於在裝置320中所形成之影像。 上文所述之偏振實施例使感測器56能夠對來自物體46及其周 圍環境之返回輻射進行偏振分析。 在各偏振實施例中,爲減小斑點,源5〇可包含一* 異相干長度小 於所加工物體之尺寸之雷射發射器。例如’對於B)形焊墊,該相 干長度可明顯小於焊塾直徑。亦可使用其他方法來減小斑點,例 如使用上文所例示之方法。 上文所述各實施例係關於使用pCB 24及/或所 , 入物體46之光 學影像來調整PCB之實際微加工位置。然而,應瞭解,pu 32亦 可使用PCB及/或所嵌人物體之其他類型之影像來確定所需之實 際位置。此外,應理解,本發明之實施例亦可用於對嵌入除pCB 以外之材料(例如陶I或玻璃)中或表面上之物體進行成像。此 項技術之一般技術者無需進行過度試驗便能夠修改上文說明,使 其適應於其他類型之影像所需之變化。 應瞭解,上述各實施例係以舉例方式加以引述,且本發明並非 僅限於在上文中所作之具體顯示及說明。而是,本發明之範疇既 包έ上文所述各種特徵之組合及子組合,亦包含此項技術之技術 者在閱讀上文說明後所將想到且在現有技術中不曾揭示之其變化 及修改形式。 【圖式簡單說明】 第1圖係爲根據本發明一實施例之光束對準裝置之示意圖; 第2圖係爲不同類型Ajinomoto累積膜(Ajinomoto Build-up Him ’ ABF)樹脂之百分比透射之曲線圖; 33 200800792 第3圖係爲不同類型娜樹月旨及刚樹脂之歸-化螢光之亍立 性曲線圖; 踅尤之不思 對^罢圖係爲—流程圖’其顯示根據本發明—實施例,操作光束 對準衣置所執行之步驟; 第5A圖顯示根據本發明一實施例之光學感測器之一表面 意圖; /x 弟5B及5C圖顯示根據本發明—實施例,圖^所示感測器上 馨 之影像之示意圖; 第6圖係爲根據本發明一替代實施例,一光束對準裝置之示音 圖; 第7圖係爲根據本發明又一替代實施例,一光束對準裝置之示 意圖;以及 第8圖圖解說明根據本發明一實施例,由第1圖、第6圖及/或 第7圖所示裝置中之源提供之成像照明配置。 【主要元件符號說明】 2〇 :光束對準裝置 21 :工作站 22 :光束源 23 :操作員 24 :印刷電路板(PCB) 25:記憶體 26 :輻射光束 27 :準直器 28 :分束鏡 30 :光學元件串 31 ·· —組光學元件 32 :處理單元(pu) 33 :平移平臺 34 ·•鏡 35 :光束操控平臺 36 :頂面 34This is accomplished by performing a further operation on the translation stage 33, the translation stage 45, and/or the beam steering platform %. Typically, if the coarse alignment corresponding to step 68 is performed automatically, it takes approximately 1-3 milliseconds from the previous micromachined hole. If the beam steering platform 35 (Figure )) is based on galvanic flow =, then a shorter time is usually applied, and if the platform is a two-axis scanning system, ¥ is applicable for a longer period of time. Preferably, the fine alignment procedure described above in step 78 takes less than about a few milliseconds. The reason for achieving this (4) is mainly due to the high intensity of the imaging radiation directed at each part of the micromachining. The key person has found that such time does not use the steps in Process 6〇 to perform such a force. ^ · Compared with the technical system of the first time, when there is a process 6Q to process pCB, there is virtually no time. loss. In addition, steps such as decision steps 84 and 86 may be performed during the addition of the pCB. Therefore, the process 6 can be implemented to operate substantially in real time. By operating at the stated time, relatively long-term adverse effects such as thermal drift can be eliminated. Moreover, by merely performing the alignment steps 7A and 72 intermittently as described above, the total operation time is shortened without affecting the precision of the micromachining. Figure 5A shows a schematic diagram of one surface of an optical sensing person 56 that can be used in a device, in accordance with an embodiment of the present invention. Typically, the sensor 56 uses complementary metal oxide semiconductor (CMOS) technology to produce the alignment signal for the alignment time given above. Alternatively, sensor 56 can include one or more CCDs (charge-coupled devices), or other suitable sensing devices. A diagram 164 illustrates the surface of the sensor 56. The sensor 56 typically includes a rectangular array of detection elements. Some examples of suitable image sensors are described below. Micron Technology, Inc. of Boise, Idaho, provided an MTM001 CMOS BO megapixel rectangular array sensor, and the inventors of the present invention found that such sensing is suitable. A programmable region of interest (Λ0Ι) can be used to limit the number of components addressed in the sensor, thereby enabling the array to be used for short acquisition times of around 1-3 milliseconds. R · Japan's Hamamatsu Photonics Κ·Κ·Company provides a Array of 256X256 Detecting Elements S9132 that can be used as two one-dimensional arrays, and gives a total output I will be described in more detail below. Those of ordinary skill in the art will be familiar with other arrays suitable for use as sensor 56. The PU 32 can advantageously use signals from the component 170 to accurately determine a particular location with respect to the object 46. Figures 5 and 5C show examples of images of object 46. For example, it is assumed that the object 46 includes a circular pad and that the circular pad is to be micromachined. "In the fifth diagram, the object shame contains an isolated approximately circular pad which produces an image 166. In Figure 5C, object 46 includes a solder fillet attached to one of the rectangular conductors approximately circular, which produces an image 176 formed by the connection of the circular portion 178 to the rectangular portion 180. If the sensor 56 is comprised of A rectangular array of individual pixels (such as the MlCIOn array mentioned above), for the image (10), the PU 32 can reduce the number of pixels to be analyzed to a rectangular pixel set 168 of one of the images 166, reducing the number of pixels. 200800792 Shorten the acquisition time for images. PU 32 can then fit all of the imaging pixels to a circle, usually using an edge detection algorithm to identify the center of image 166 with sub-pixel precision. For example, by using 130 100x100 pixels in megapixels, compared with the nominal frame rate of 30 Hz, can improve the image acquisition time by nearly 100 times, so as to provide sub-millisecond acquisition time. With high image illumination intensity, this is provided by illumination of the directional portion from source 50 via mirror 34 (Fig. 1). For image 176, PU 32 can reduce the number of pixels to be analyzed to a rectangular pixel of surrounding portion 178. Set 179 (possibly removing some of the pixels in rectangular portion 180.) With an edge detection algorithm, PU 32 can then fit the imaging pixels that form a non-linear edge to a circle to identify the circle with sub-pixel precision. The center of section 178. Alternatively, PU 32 can fit all pixels to an expected theoretical edge using an edge detection algorithm that intersects a circle with two parallel lines on one side of the circle. In general, the pixels selected by the PU 32 for analysis need not be a simple rectangular array. For example, the imaged portion may comprise a small circular pad attached to a large circular pad, in which case The pixels selected by PU 32 can be configured to include exactly the set of generally irregular pixels selected for that portion. Sensor 56 can include an array that does not give an output for each pixel in the array. For example, the Hamamatsu array mentioned above. In this case, the PU 32 can apply a curve fit to the sum output of the array to find the center of the images 166 and 178. Figure 6 is an alternative to the present invention. 28 of the embodiment of the beam alignment device 320 200800792. The operation of the device 320 is substantially similar to the operation of the device 20 (Fig. 1) except for the differences described below, and the devices 20 and 320 are referenced by the same reference numerals. The elements shown are generally similar in construction and operation. Device 320 includes a beam splitter 326 and has a beam splitter 52 removed. Beam splitter 326 is used to transmit imaging radiation from source 50 and return radiation from portion 43. Reflected to sensor 56. If the return radiation has the same wavelength as the source 50, the beam splitter can be a 50/50 beam splitter. If the radiant radiation is returned, the beam splitter 326^ can be configured as a dichroic beam splitter. Alternatively, as described below, the beam splitter 326 can be a polarizing beam splitter. In device 320, optical element string 30 is separated into two sets of optical elements. The first set 324 typically includes movable optical elements that can be used to vary the magnification of the beam from source 22. The second set 322 typically includes a fixed optical component. By dividing the optical element string 30 into the two groups, the magnification of the beam from the source 22 can be adjusted without affecting the illumination and the imaging path between the beam splitter 28 and the mirror 34. Elements 323 and 325 in device 320 will be described below. If the normal imaging illumination provided in device 320 is substantially uniform over portion 43, i.e., if the illumination has little or no structure at all, the image obtained by specular object 46 is typically surrounded by a bright image of the object. A dark background image of the area of the object, and the two images have a good contrast. After consideration of the devices 20 and 320, optical elements such as the steerable mirror 34 and the optical element string 30 can transmit at least two different wavelengths, i.e., the beam wavelength of the beam 26 and the imaging radiation wavelength of the source 50. If fluorescent is used, the optical components can deliver three different wavelengths, namely the beam wavelength, the imaging radiation wavelength, and the fluorescence 29 200800792 wavelength. Configuring the same components to deliver two or three different wavelengths significantly reduces the number of optical components that may be required if a separate set of components are used for different wavelengths. Figure 7 is a schematic illustration of a beam alignment device 330 in accordance with yet another alternative embodiment of the present invention. The operation of device 330 is generally similar to the operation of device 20 (Fig. 1) and device 320 (Fig. 7), except for the differences described below, and the components represented by the same reference numerals in devices 20, 320 and 330 are The construction and operation are generally similar. Device 330 includes a lens system 336 between mirror 34 and portion 43. Lens system 336 typically includes a telecentric lens that enables mirror 34 to have an FOV of about ±20°. Adding the lens system will configure device 330 as a "pre-scan" system. The larger the FOV of the mirror, as compared to the scanning system described above, enables the mirror to project the beam 26 onto the larger area of the PCB 24 and image the area. Optical component sets 324 and 322 are typically reconfigured to include a first set 334 of movable elements and a second set 332 comprising fixed elements, groups 334 and 332 being selected to accommodate lens system 336. The above description of devices 20, 320, and 330 assumes that the imaging illumination is generally perpendicular to surface 36 and is generally unstructured. In some embodiments of the invention described below, the imaging illumination can also be configured to have the illumination structured as described below. Figure 8 illustrates an imaging radiation configuration 344 provided by source 50 in accordance with an embodiment of the present invention. The figure shows a cross-sectional view 340 and a top view 342 of the PCB 24 in the case of a radiation configuration 344. In configuration 344, the imaging radiation on surface 36 is structured into imaging radiation, for example, in the shape of a generally circular ring 346. The imaging radiation penetrates layers 38 and 40 and is also locally scattered within the layers due to diffusion within the layers, such as primarily due to the inclusion material contained in the layers. The combination of penetration and local scattering effectively "self-backlighting" the object 4-6, as indicated by the arrow 344, thereby forming a high contrast image on the sensor 56. High-contrast images are produced regardless of whether the object is shaved or not. In addition, high contrast images formed by back illumination effectively compensate for image blurring that may be caused by (d) diffusion in the layers. If you do not use the backlight, the image can cause a deviation in the position of the image. It is possible to place an element 51 (a ten-way stop) between the lens 49 and the beam splitter 52 to advantageously provide a light-emitting configuration 344 in the device 2A. Although not shown in the figures for clarity 'However, it is also possible to provide a configuration 344 in the device by placing the stop device between the lens and the beam splitter 28. Others are used to form annular radiation in the devices 320 and 330. The method (e.g., used to obtain a structured illumination braided diffractive element) will be apparent to those of ordinary skill in the art and is believed to be included in the material I of the present invention, e.g., element 5] · Source material _ his shape red structuring (four), the lighting is structured according to the imaged part. For example, you can use - rectangular: bright = to the area around the linear trace. All these forms Structure;; = Baijiling is still included in the scope of the present invention. In order to obtain the configuration 344, the source 5G can be selected to have a polar emitter, so that it is a laser processing object of the Dingcheng The inventors have found that the coherence length is about this inch (for example, the diameter of the 81-mass) A multiple of the laser is suitable for re-see Figure 6, an alternative radiation configuration using polarized illumination radiation. As in the 6th 31 200800792 winter polarization state 323 placed after the source 50, and an analyzer placed in the sensor Before 56, the probe contains ^ 5. Another alternative is that since the source 50 generally provides polarized radiation, the polarizer 323 can be used without any. Orientation of the polarizer 323, or source 5G (if the basin is lightly polarized) The orientation of the analyzer and the orientation of the analyzer 325 can be controlled by the Pu 32. Alternatively, the material direction can be preset by the operator 23 to be a large surface 36 and a PCB 94. (For example, the interface between layer 38 and layer 40, the reflection has the same polarization as the incident polarized radiation of low human angle. The acoustic backscattered radiation is relatively weak, and is mainly the same as human polarized radiation. The cover is still static. 'If the object 46 has even a partially rough metal surface" the adhesion between it and the resin embedded in it, it is usually the case), and the reflection of the Koda field κ is depolarized and thus has an incident polarization. Light shot is (10). f. In the alternative configuration described herein, '卩(四) sets the polarizer milk and the analyzer milk to have a polarization, or manipulates the orientation of the 23 strands so that the surfaces and layers 38 The specular reflection on the inside of the 4G is absorbed, and the radiation from which the object is depolarized is transmitted. The polarization of the intersection thus provides a good image of the object 46 having a high contrast with the material surrounding the object. In an alternative embodiment of polarization, neither polarizer 323' nor analyzer 325 is used. Instead, source 5A is constructed to provide polarized illumination, and beam splitter 326 is configured to transmit transmissive A reduced-polarization beam splitter mirror is used to reflect the depolarized (four) (including the light from the object 46) to the sensor 56' thereby forming a good image of the object as described above. Referring again to Figure 1, the beam splitter mirror 52 can be configured as a polarizing beam splitter at the wavelength of the source 5G to cause the object formed by the device to be imaged 32 200800792. The quality is similar to that in the device 320. The resulting image. The polarization embodiment described above enables the sensor 56 to perform polarization analysis of the return radiation from the object 46 and its surrounding environment. In each polarization embodiment, to reduce speckle, the source 5〇 may comprise a laser emitter having a *isocoherent length that is less than the size of the object being processed. For example, for 'B' shaped pads, the coherence length can be significantly less than the diameter of the pad. Other methods can also be used to reduce the spots, such as using the methods exemplified above. The various embodiments described above relate to the use of pCB 24 and/or optical images of objects 46 to adjust the actual micromachining position of the PCB. However, it should be understood that pu 32 may also use PCBs and/or other types of images of embedded objects to determine the actual location required. Moreover, it should be understood that embodiments of the present invention can also be used to image objects embedded in or on materials other than pCB, such as ceramic I or glass. The general practitioner of this technology can modify the above descriptions to adapt to the changes required for other types of images without undue experimentation. It is to be understood that the above-described embodiments are cited by way of example, and the invention is not intended to Rather, the scope of the present invention is intended to be inclusive of the combinations and sub-combinations of the various features described above, and the changes which are apparent to those skilled in the art Modifications. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram of a beam aligning device according to an embodiment of the present invention; Fig. 2 is a graph showing a percentage transmission curve of different types of Ajinomoto Build-up Him 'ABF resin Fig. 33 200800792 Fig. 3 is a graph of the verticality of the different types of Nashu and the resin of the resin - 踅 之 对 ^ ^ 罢 罢 罢 罢 罢 罢 流程图 流程图 流程图 流程图 流程图 流程图 流程图 流程图 流程图 流程图 流程图Invention - Embodiments, the steps of operating the light beam to align the garment; Figure 5A shows a surface intent of the optical sensor in accordance with an embodiment of the invention; /x 5B and 5C are shown in accordance with the present invention - an embodiment Figure 6 is a schematic view of the image of the sensor on the sensor; Figure 6 is a sound diagram of a beam aligning device according to an alternative embodiment of the present invention; Figure 7 is a further alternative embodiment of the present invention. For example, a schematic diagram of a beam alignment device; and FIG. 8 illustrates an imaging illumination configuration provided by a source in the device of Figures 1, 6, and/or 7 in accordance with an embodiment of the present invention. [Main component symbol description] 2〇: Beam alignment device 21: Workstation 22: Beam source 23: Operator 24: Printed circuit board (PCB) 25: Memory 26: Radiation beam 27: Collimator 28: Beam splitter 30: optical element string 31 ·· - group optical element 32 : processing unit (pu) 33 : translation stage 34 ·• mirror 35 : beam manipulation platform 36 : top surface 34
200800792 38 :層 40 42 :所選區 43 : 44 :插圖 45 : 46 :物體 49 : 50 :輻射源 51 : 52 :第二二向色分束鏡 53 : 54 :箭頭 55 : 56 ··光學感測器 164 166 :影像 168 170 :矩形之偵測元件陣列 176 178 :圓形部分 179 180 :矩形部分 320 322 :第二組光學元件 323 324 :第一組光學元件 325 326 :分束鏡 330 332 :第二組光學元件 334 336 ·•透鏡系統 340 342 ··俯視圖 344 346 :大體圓環形狀之成像輻射 348 ••層 部位 平移平臺 聚焦透鏡系統 元件 濾光片系統 聚焦透鏡 :圖式 :矩形像素集合 :影像 :矩形像素集合 :光束對準裝置 :元件 :元件 :光束對準裝置 :第一組光學元件 :剖面圖 :輻射配置 :箭頭 35200800792 38 : Layer 40 42 : Selected area 43 : 44 : Illustration 45 : 46 : Object 49 : 50 : Radiation source 51 : 52 : Second dichroic beam splitter 53 : 54 : Arrow 55 : 56 · Optical sensing 164 166: image 168 170: rectangular array of detection elements 176 178 : circular portion 179 180 : rectangular portion 320 322 : second set of optical elements 323 324 : first set of optical elements 325 326 : beam splitter 330 332 : Second set of optical elements 334 336 ·•Lens system 340 342 ··Top view 344 346 : Imaging radiation 348 of generally toroidal shape ••Transformation of layer parts Platform focusing lens system component Filter system Focusing lens: Schema: Rectangular pixel set : Image: Rectangular Pixel Set: Beam Alignment Device: Component: Component: Beam Alignment Device: First Group of Optical Components: Sectional View: Radiation Configuration: Arrow 35