TW200809169A - Vibrational wave detection method, and vibrational wave detector - Google Patents

Abstract

Provided are an oscillating wave detection method and device capable of obtaining a Hilbert transform pair output as an instantaneous value in real time. The oscillating wave detection method causes an oscillating wave to propagate to a plurality resonance beams (51 to 5m), each resonating to a particular frequency, and detects oscillation of each of the resonance beams (51 to 5m) as an electric signal by using piezoelectric resistors (61 to 6m) arranged in the resonance beams (51 to 5m). The resonance beams (51 to 5m) are arranged so that positions of the respective resonators are arranged in a logarithmic linear form proportional to a logarithm of their resonance frequencies. When N is an integer not smaller than 2, the resonance beams (51 to 5m) are selected by every other N-1 and the outputs of the piezoelectric resistors (61 to 6m) are added so as to output a plurality of signals. More preferably, the N is an integer not smaller than 3 and the resonance beams (51 to 5m) are arranged and the resonance frequencies are set so that the ratio of the resonance frequencies of the resonance beams (51 to 5m) of every other N-1 is constant.

Description

200809169 IX. Description of the Invention: [Technical Field] The present invention relates to a vibration wave detecting method and apparatus for detecting the intensity of each vibration wave band. [Prior Art] discloses the detection of each vibration wave frequency detector. The vibration sensor has a resonance level which is a resonance frequency of a resonance frequency at a frequency of a vibration wave such as a sound wave, and is converted into an electric signal. The resonance sub-array type vibration of the intensity of the non-patent document 1 and the non-patent document 2

Arrangement of resonators with different resonant frequencies. For the middle resonators, they vibrate in their own resonance. The vibration sensor outputs each of the resonators. No vibration induction - a piezoresistive force is formed in the vicinity of the resonator support portion, and a resistance value change of the piezoresistance caused by the vibration (resonance) of the resonator is extracted by the Huibei bridge, thereby taking out from the resonator: The sensor switching multiplexer described in the document 2 obtains the Wheatstone bridge output signal of the bit = sub. /, &lt; == Ship and Patent Document 2 propose a method of making a gain of a specific frequency band by a simple resonance sub-array type. For example, the patent document &quot;== in: vibrator array type vibration sensor, parallel or change the resistance shape of the factory and change the resistance value, control special I22268.doc 200809169 - the level of hope, by adjustment The position of the piezoresistance of the resonator, control. The gain of a specific frequency band. Non-Patent Document 1: W. Benecke et al., &quot;A Frequency-Selective, Piezoresistive Silicon Vibration Sensor," Digest of Technical Papers of TRANSDUCERS *85, pp/105-108 (1985) Non-Patent Document 2: E· Peeters </ br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br> Japanese Laid-Open Patent Publication No. 2000-46640 [Draft of the Invention] [Technical Problem to be Solved by the Invention] On the basis of processing vibration phenomena and acoustic signals, signals are expressed as complex numbers, and instantaneous detection of amplitude/phase and modulation of signals can be realized. Various resolutions and conversions such as demodulation. The previous audio represented by a microphone / _ vibration sensor is a device that converts physical quantities such as sound pressure at various times into electrical signals, and its output is a single actual signal. In general, in order to convert an actual signal into a corresponding complex signal, the following operation called Hibbert conversion must be performed. This operation is non-causal and cannot be performed on wideband signals. Therefore, the complex representation of the actual applicable signal is limited to narrowband signals as used in the communications field. Between the real part and the imaginary part of the analytic function, there is generally the following Hebekao conversion relationship. Let the imaginary unit be j, and the complex variable z 2x+jy above the half plane, 122268.doc 200809169 Regular function Φ(ζ)=υ(χ, y)+jv(x,y) The boundary value on the real axis f(X)-U(X,〇), g(x):=rV(X,0), the integral function of f, g is a real number (f, gGL1(-〇〇, ))8 Keep 'the relationship shown by formula (1). Six)

ν· π οο f(x)= 兀ρ* ν· f (x+t) tg(x+t) t dt dt (1) where 'as shown in equation (2), ρ·ν· means The main value of Cauchy. P' V' F<t)dtJ-:F(t)cit + JY F - Let g be the Hibbert transform of f, and ^ and ^

Temple conversion pair. The Hibbert transformation is a function of the real part and the sorrow of the analytic function. &amp; It is convenient to analyze physical phenomena, especially vibration phenomena, on the ^-number plane. A ^,, &quot;, the vibration phenomenon has half the amplitude and phase of the time change by the time of the Euler's formula eje == cos e + jsin θ, the moment of each moment * Ϊ information: not charge (10) The value of the phenomenon, only the real part or the imaginary part _, - brother knife, must know both the real part and the imaginary part. Because the relationship between the oscillating part and the imaginary part constitutes the Hibbert's expression of g or f. Therefore, hunting is performed by j. However, as shown in the equation (1), since the equation is expressed as the time integral of the interval (-...) in the equation (122), it is necessary to observe a certain period (in the period function, at least ^ period). In the conventional vibration wave detecting device, since only one piece of information can be detected, it is impossible to immediately obtain information of both the real part and the imaginary part. For example, as shown in the patent document IU, by applying the bias voltage of the piezoresistive detector corresponding to the resonant frequency of the resonator, it is possible to realize a dynamically changeable frequency t ° but the load of the previous method 'vibration wave detection only Limited to the positive and negative cents, the Hibbert conversion cannot be obtained instantaneously as an instantaneous value. SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object thereof is to provide a vibration wave detecting method and apparatus which can instantaneously obtain a Hibbert conversion pair output as an instantaneous value. [Means for Solving the Problem] The vibration wave detecting method according to the mth point of the present invention transmits the vibration wave to a plurality of resonators that resonate at specific frequencies different from each other, and detects vibration waves of the vibrations of the respective resonators. The detecting method is characterized in that the plurality of resonators are arranged such that the position of each 'resonator' is a logarithmic line which is proportional to the logarithm of the /, the frequency of the vibration, and the sub-set is an integer greater than T, and one of the inputs selects the plural The resonance wave 复 The signal of the second aspect of the vibration wave detecting device of the second aspect of the present invention is characterized in that the vibration wave detecting device of the second aspect of the present invention has a resonance sub-row, and the system is different from each other. a plurality of frequency resonances /, vibrators (four) 'the logarithmic line that makes the position of each resonator go to the frequency of the resonance frequency such as /, ° ;; 122268.doc 200809169 detector, which is detected by propagating to the foregoing The vibration of the resonator of each of the complex numbers caused by the resonance sub-row; 'A plurality of rounds of the composite part of the moving wave, which sets N to an integer of 2 or more> N-1 selects the plurality of resonances described above , Who the master is detected by calculating method compartment. [Invention Effect] According to the vibration wave detecting method and the vibration wave detecting method of the present invention (the information about a certain sigma is not obtained, the Hibbert conversion is outputted. Modes Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the same or equivalent part, an acoustic sensor in which the vibration wave of the object in the same symbol is used as the acoustic wave is taken as an example; FIG. U is a diagram showing the sensor body of the vibration wave detecting device of the present invention. Open; ί成于半导体石夕美拓2 ο P Today's sweat Sonic diaphragm 2, and the sensor body 1 of the diaphragm is connected by the receiving M2! The terminating plate 4 connected to the transverse end of the root, and the beam, the 榡3 - the resonant beam 5 b 52, ... 5m (the following / heart # support of the complex number (read) m (hereinafter referred to as the resonance is partially The semiconductor crucible is formed. (4) The width of the beam 3 is the thickest at the end of the diaphragm 2 side, and thus becomes thinner at the end portion on the side of the end plate 4. In the middle, 仏 indicates The nth resonance 。. In addition, each resonance 襟5 constitutes an adjustment; the width of the vertical yoke 3 is a specific frequency resonance. ^The length of the resonator is such that it is at 122268.doc -10* 200809169 Beam 5, in response to vibration at the ground. The resonance frequency f of the following equation (3) f selectivity f = ca Vy (3) where C: experimentally determined constant a: thickness of each resonant beam 5 X · each resonant beam Length of 5 γ: Young's modulus of material substance (semiconductor S) S: Density of material substance (semiconductor 矽) is known from the above formula (3), and its resonance frequency can be changed by changing the total thickness a or long χ f is set to the desired resonant frequency. In this wealth, all the resonant beams 5 ^ = have solidified her body! Each of the resonant beams 5: set: two = _ rate pair The number proportional is called the logarithm: two, the common beam of the vibrating beam 5 (four) is arranged at equal intervals. That is, the resonance of the adjacent common_5 (four); is a fish for any resonant beam 5 is &quot;^ ^ for the fish Bone sensor. (4) Sense of composition - : for the fishbone sensor system logarithmic linear structure 'so start from the position of the beam &amp; II' its front end shape in any resonant beam 5, ... a vibration wave The traveling speed has a certain characteristic regardless of the frequency proportional to the frequency 122268.doc 200809169. The sensory body 1 formed by Shi Yicheng is composed of micro-mechanical plus on the semiconductor Shishi substrate 20. The vibration energy beam 3 input from the diaphragm 2 is distributed to each of the resonance beams 5, and the mechanical-electrical disturbance of each resonance system is converted into absorption, converted into signal energy and taken out. Fig. 4 shows the resonance body 5 by using the sensor body i A circuit diagram of an example of a vibration-wave detecting device of a piezoresistive mode in which the sum of the turns is output. ^ In the circuit of Fig. 2, a positive DC bias is applied to the upper resonant beam 5ia to 5, on the lower side of the * The resonant beam 51b~5mb applies a negative DC bias, and each resonance target After the addition, the root signal line is added after the addition operation. Here, for easy understanding, it is set to reverse the phase vibration of the upper and lower resonance beams 5, and the upper and lower sides 6 are mutually reversely stretched and contracted. In Fig. 8, 6·6 The resistance value of the piezoresistance on the upper side resonant beam of the ith

R...(1), the resistance of the piezoresistive force on the lower side resonant beam of the ith is UR, and (1) 'the voltage applied to the common terminal of the upper and lower resistors is V〇·V〇' flows from the other common terminal The current at the imaginary ground point of the operational amplifier is expressed by the following equation (4). And take it out.

N

N

V N Σ 〇 SRCt) 2V( ο )(·

Ri) (4) By applying the resistance Rf as the vibration voltage expressed by the following equation (5) 122268.doc 12- 200809169

N

^RjCt) (5) _ σ The rounded load 1 can be changed by adjusting the resistance Ri. However, it is actually fixed by refining when manufacturing a wafer. shell

In the above method, the output is proportional to the bias voltage V〇, and it is conceivable that the mother/the vibrating beam 5 changes the bias voltage. Fig. 9 is a circuit diagram showing an example of a prior art vibration wave detecting device using a plurality of bias voltage lines. Using the circuit of Figure 9, the gain can be dynamically adjusted by frequency. If the bias voltage of the ith resonance is ±Vi, the output voltage v is expressed by the following equation (6). 1M out

However, since the number of wires that can pass through the beam 3 is limited, if the number of the resonant beams $ is large, it is necessary to perform grouping bias control on the resonant beam 5. 〃

The vibration wave detecting device shown in Fig. 9 has a variable frequency characteristic, but the gain that can be set for each frequency is limited to a real number. The gain when filtering is real or pure. The imaginary number is limited to the case where the pulse response is symmetrical or antisymmetric. If the gain set at each frequency is limited to a real number, an arbitrary pulse wave response cannot be achieved. In any of the vibration wave detecting devices shown in Fig. 8 or Fig. 9, the rounding is limited to the real part, and the output of the Hibbert switching pair cannot be obtained. (Embodiment 1) Fig. 2 is a circuit diagram showing an example of a vibration wave detecting device of the present invention using a sensor body. In the deformed portion (the lateral direction 3 side) of each of the resonant beams 5 of the sensor body 堡, the barriers 61, 62, ... 6 m (hereinafter collectively referred to as the repeating resistor 6) are formed. The plurality of piezoresistors 6 are connected in parallel, and one end of the piezoresistive resistor 6 is connected to the power source 7a of the voltage VG of the bias voltage of 122268.doc -13 - 200809169. The other end of the relocation 6 is N as the positive climbing |, the κ one, the 登 登 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The input terminals of the operational amplifier 10) are connected. That is, the current output of the piezoresistive (four) stream, which is equal to the number of the remaining (modulus) of the Ν, is added to the central white, and the respective different operations are input to amplify the genus 10. Put ##, &amp; χτ into % for the Ν addition method. In Fig. 2, let Ν be 3, and the other 压 of the piezoresistive 6 is 3_1=2 and the common line is connected, the piezoresistive 61, 64, ... and the operational amplifier 1〇a Connection, dust resistance 62, ... and the operational amplifier (10) connection 'Li 63, ... and transport 10c connection. The °σ transfer-impedance operational amplifier 10 is an electrical undervoltage conversion amplifier that outputs 铷I and is 〇-resistant and has an output impedance of 〇. The input terminal of the operational amplifier 1〇 is connected to the common ground of the ground-connected -1 connection via the power supply 7b of the virtual resistor voltage -V0. Reverse negative Next, the action of the vibration wave detecting device shown in Fig. 2 will be described. Let the frequency characteristic on the logarithmic frequency axis of the ugly vibration beam be Fn(Q). t towel, (4) 4 shows the logarithmic frequency. Since the sensor body 丨 has a logarithmic linear structure Μ 2 now the frequency characteristics of all the resonant beams use a common characteristic shape (Ω), which is assumed to be expressed by the equation (7). - ρ(α^ηΔΩ)(7) Armor, △ Ω represents the logarithm of the resonance frequency ratio between adjacent beams. Fig. 3 is a view schematically showing the frequency characteristic Fn ( Ω ) of the resonant beam 5 of the maker body 1. Since the ratio of the resonance frequencies of the adjacent resonant beams $ is 122268.doc -14 - 200809169 :, the respective frequency characteristics h(8) expressed on the logarithmic frequency are arranged in substantially the same shape and at equal intervals ΔΩ. If the output root of the resonant beam is added, then η = 1, 2, .., and the frequency characteristics of the first output can be as shown. H (Q)

.n+kN (Q) ~ Σ F(Q -(n+kN) AQ) =F(Q-ηΔΩ)*| δ(Ω-咖(1)(8) where &quot; means folding. Also '5 Series Diyoke He functions. In the actual sensor body 1 (fishbone sensor), the number of the resonance beam 5 is limited, and 曰 is - the following is simple for the sum of the k of the equation (8) is infinite sum (k - 〇〇, 〇〇), in the end, investigate the influence of the finite number of beams. \(c) = f(c)e^^^Ac2 Mc~kAc) k where △ c can be as in equation (10) Show. Under the above assumptions, 'Focus on the Zhous' number of rows (Four) is changed to the period &lt;5 function line, and if Fourier transform is performed on both sides, then equation (9) is obtained. (9)

2 71 ΝΔΟ (10) Further, hn(c) and f(c) are Fourier transforms on the logarithmic frequency axes of (1) and F(Q), respectively, which can be expressed as equations (n) and (12, respectively). ). 122268.doc -15- 200809169 ha(c)f(c)

Hn(Q)e-icDdQF(Q)eL dQ (11)(12) If it is noted that the sensor body i is a logarithmic linear structure, since the logarithmic frequency Ω is proportional to the position of the beam 3 in the longitudinal direction (resonance mark) The interval between 5 is proportional to the difference between the logarithmic frequencies Ω, so Ηη(Ω) can be regarded as the beam 3

- a kind of fluctuation. Thus, hn(c) is equivalent to the conversion to the (space) frequency region of the fluctuation Ηη (Ω). Gong Li i(c) is centered on Δ C f(c) =0 (c^o or cl2Ac) (13) At this time, in equation (8) (the function of k of the 5 function is 〇, i shell Feng Wei so only the contribution of the remaining ky item, get the formula (14). =: f(c)dnAilc-^cg (14) (15), dependent ^ Acf(Ac)e^2^^/N, β (c_ If inverse FFT is performed, then (15). If you notice that the term 依 depends on Ω, the term Δ is in the phase of n, which is called the phase rotation term of e, depending on the phase rotation term. Equation 5) The amplitude characteristic with the frequency helmet and A ~ ) is a certain value, which means that the phase shift of the total flux is $ η phase - there is % 2 domain Hibbert conversion ^ know, Η 1 (Ω)~ΗΝ(Ω) is the result of the above. It can be seen that the structural parameters are controlled so that the Fourier transform f(c) of the frequency characteristic of 122268.doc -16-200809169 0 on the logarithmic frequency axis is A, black^ A — ,; the narrow band that satisfies the degree of (13), • For the amplitude peak CG of f(C), by selecting 共振 = Δ c = 2 7 Γ / (Ν Δ Ω ) by selecting the resonance frequency ratio The logarithm Λ n — a — 丄 ^ has caused △ Ω, which can be achieved by the N-phase addition method. After the λ 帛, if the range of the function 5 of the period 5 of the equation (8) is assumed to be from · KfijK due to the influence of the finite number of resonance enthalpy, then Table 10 is now As in formula (16).

Hn(Q) = F(D~nAQ)* f δ(Ω^ΝΔΩ) (χ6) k—κ This Fourier transform is expressed by the following equation (17). κ ^ = f (c) ejnAQc· ^ QjkN&amp;Qo

k= —K ^ f (c) e531 Δ Ωc · DK (c) (17) • In the formula, dk(c) of the formula (17) is expressed by the following formula (18), which satisfies the period Δ of the formula (19) The periodic function of °^2 π /(ΝΔ Ω ).

Kc)— sin ((K+1/2) 2 π c/ Δ c) (18) tv^— sin (2 π c/ Ac) DO ^ DK(c) K -4 CO =Ac 2 δ (c— kAc) (19) k= — 〇〇 In the case where K is finite, Dk(c) has a height of 122268.doc -17- 200809169 at c==kA c (k is an integer) and has one side around the peak △ c / (2K + l) around the peak of P 至 to the first zero point is △ c / (2k + i). Therefore, if the formula (13) is larger than the same, the fruit type (2〇) is established, because by multiplying (10), only the vicinity of 〇Κ(4) is held, so the same discussion as described above approximately holds 0 f(c). ) = 〇Δϋ

Ac (20) &quot;2Κ+Γ ^ 〇έ 2Δ〇-2Κ+1 / In the example of the vibration wave detecting device of Fig. 2, (4), τ obtains Heber as an instantaneous value every 2 verbs/3 of 3 phases. Special conversion to output. From equation (7) to Η, it can be seen that if the ratio (Ν Δ Ω ) of the resonance frequency of the resonant beam selected every Ν·1 is constant, Δ Ω is also different. On the complex plane of △ Ω, the angling angle is equal. Also, as a Hibbert conversion round, it is also possible to output all N phases. For example: 5^,, N=4, by the output of (4) and 2 phases, the Hibbert transform can be obtained: ==, if its logarithmic linear structure is self-similar, then there is a proper interval of resonance frequency as (4) A 2-phase Hibbert conversion pair output with a phase difference of K can also be obtained. One: △: It is a certain 'The ratio of the resonance frequency of the adjacent resonant beam is set to... The shape of the sensor body 1 is easier to manufacture, and the processing of the output is also easy. In this case, the output of the third phase of the heart (4) and the second phase of the second phase and the y' shape can be appropriately adjusted because the declination is different every &quot;2, so: 1: brother 2 and 4 The phase is the signal of the inverse part, the 3rd phase, the 3rd phase, the imaginary part (the 2nd phase, the 4th phase) - the V part (4) phase, the 122222.doc -18, 200809169 and 7 pf ηΐι, Ό from the above According to the vibration wave detecting device of the present invention, the Hibbert conversion pair output expressed by &gt; The vibration wave detecting method of the present invention can be utilized in any scene where the previous microphone and vibration sensing are made. Further, it can be utilized in the following cases. In the case of Hibbert conversion, it is possible to perform time-decomposing high-vibration vibration and sound detection, for example, instantaneously detecting abnormal sounds in a continuous motion machine. also,

As a possibility, a broadband AM/FM demodulator can be implemented. Also, you can use the redundant signal of Ν phase to detect noise and so on. (Modification of the first embodiment) FIG. 4 shows an example of a vibration wave detecting device in the case where the resonance beam 5 is provided on both sides of the beam 3. In the sensor body 1 of FIG. 4, the resonant beams 5 on both sides of the beam 3 have the same resonant frequency, and each pair of pairs forms an n-group resonant beam. FIG. 5 shows the invention using the sensor body i of FIG. A circuit diagram of an example of a vibration wave detecting device. In the deformed portion (the side of the beam 3) of each of the resonant beams $ of the sensor body i, a piezoresistive 6 ι &amp; 6 to -6 is formed, (hereinafter collectively referred to as genus 6). The plurality of piezoresistive turns are connected in parallel, and one end of the piezoresistors 61a to 6ma on the upper side of Fig. 5 is connected to a power source of a bias voltage of %. One end of the piezoresistors 61b to 6mb on the lower side of Fig. 5 is connected to the power source 7b of the bias voltage _v❶. The other end of the piezoresistive resistor 6 is connected by a positive integer, and is connected to the input terminal of the operational amplifier 10 by a common line. In Fig. 5, it is assumed that 3 is the same, and the other end of the piezoresistive 6 is connected to the common line every 3_1=2. That is, the piezoresistive 122268.doc -19- 200809169 61 bib, the junction amplifier 10a is connected, the piezoresistive resistors 62a, 6 holes, ... are connected to the operational amplifier l〇b, and the voltage p and a a 1〇c are connected. 1 resistance 63a, (four), ... and the operational amplifier The operational amplifier 1〇 + input terminal is grounded. The output line connected every μ is connected to the electric (4) via the recording 6nb of the pair of resonant beams 5nb, so the dummy resistor Rd is not required. In the sensor body i of Fig. 5, the resonance frequency of the pair of resonance beams and the ground is the same, and the same phase is added, so that the same results as those of Fig. 2 can be obtained. In the case of Fig. 5, since the up and down motion is formed, the sensitivity is twice. ^ (Embodiment 2) FIG. 6 is a circuit diagram showing a case where the detector is a capacitance measuring device. The vibration wave of the present invention is detected at the front end portion 81 of each of the resonant beames 5 (hereinafter referred to as front end setting = The semi-conducting substrate 2 is formed with electrodes 9i to 9m (hereinafter referred to as electrodes 9)', and the electrodes opposite to the front ends of the respective resonant beams 5 are formed to form the front end portion 8 of the electric smashing resonance beam 5. a movable electrode that moves up and down with vibration. On the other hand, it is formed on the semiconductor substrate.

A fixed electrode whose position does not move. Further, if the resonance 疋W is particularly vibrating at a frequency, the capacity of the capacitor also changes because the distance between the opposing electrodes fluctuates. Therefore, the plurality of electrodes 9 are connected in parallel and connected to the power source 7a of the (four) core. The front end 8 is a positive integer, and the input terminal is connected by a common line "transportation amplification" (fourth). The composition is called N phase 122268.doc •20- 200809169 Addition method. N is set to 3, and the front end portion 8 is connected by a common line every 3-1=2. That is, the front end portion 81, ... is connected to the operational amplifier 1^, and the front end portion 82 is connected to the operational amplifier 10b. The unit 83, . . . is connected to the operational amplifier l〇c. The input terminal of the operational amplifier 1〇 is grounded. The common line of the '4 connections is connected to the power supply 7 b of the negative voltage -ν〇 via the dummy resistor Rd. .

The vibration wave detecting device of Fig. 6 is identical to the sensor body of the piezoresistive resistor 6 of Fig. 2 except that the phase of the change in the resistance and the capacitor corresponding to the vibration wave is different. Therefore, even if the detector is in a capacitive state, the Herbert transform pair output can be obtained instantaneously as an instantaneous value by performing addition every N-1. (Modification of Second Embodiment) Fig. 7 shows an example of a vibration wave detecting device in the case where the detector is a capacitor in the structure in which the resonant beam 5 is provided on both sides of the beam 3. Similarly to the modification (Fig. 5) corresponding to the embodiment, the resonant beam 5 on both sides of the beam 3 has the same-resonant frequency, and the pair of resonant beams 5 are formed in pairs opposite each other. Electrodes 9 ia, 9 ib~9ma, and 9 mb are formed on the semiconductor cymbal substrate 2 对 at positions opposite to the front end portions 81 &amp; 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 Referring collectively to the electrode 9), a capacitor is formed by the end portion 8 of each of the resonant beams 5 and the respective electrodes 9 opposed thereto. The upper side electrodes 91a to 9ma of Fig. 7 are connected to the power source ^ of the bias voltage %. The lower side electrodes 91b to 9mb are connected to the power source of the bias voltage _Vq. Each of the «5 front ends is a positive integer, and each of the roots is connected to the input terminal by a common line and the amplification HH. In the towel of Figure 7, set the kiss, the first 122268.doc • 21 · 200809169 part 8 every 3-1 = 2 are connected by a common line. That is, the front end portions 8^, 81b are connected to the transport magnifier 10a, the front end portions 82a, 82b, ... are connected to the operational amplifier 110b, and the front end portions 83a, 83b, ... are connected to the operational amplifier i?c. The + input terminal of the operational amplifier 10 is grounded.

The vibration wave detecting means of Fig. 7 is identical to the sensor body 1 of the piezoresistive resistor 6 of Fig. 5 except that the phase of the change of the resistance corresponding to the vibration wave and the capacitor is different, and is completely the same as the modification of the embodiment i. It is seen that even if the detector is a capacitor, the Hubert conversion pair output can be obtained by performing addition every N·1. Further, it is a differential output of the capacitor as compared with the configuration of the one side resonance beam 5 of Fig. 6. As described above, according to the vibration wave detecting device of the present invention, even if the detector is a capacitor, the output of the pair can be obtained instantaneously as an instantaneous value. Retracting the enamel and ~π T, you can get the Hibbert conversion for every 3 7 Γ /3 of 3 phases. If the ratio of the resonance frequency (N Δ 〇 1 ΔΩ) of the resonant beam selected every other one is constant, it may not be necessary. Further, when Δ Ω is constant, h I ′ Ν phase is on the complex plane, and the off-angles are equally spaced. Further, it is also possible not to output the Ν phase to the φ π gate, and the same as the implementation of the sinus 1. In addition, the above-mentioned hardware configuration is an example, and can be changed and corrected. This Shen Qing is based on the 27th of January 2006, 1 1771〇〇, and the Japanese National Patent No. 2006-177199. In the book, '1, 771 00^-. 1 糸翏 日本 日本 2006 - 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 268 268 268 268 268 268 268 268 122 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 兄 122 122 122 122 122 122 122 -22- 200809169 1 invention can be used to detect the vibration frequency of the sound [simplified description of the drawing]. Figure 1 is a diagram showing the vibration wave detection example of the present invention. The vibration wave detecting device is an electrogram of an example. Fig. 3 is a schematic diagram showing the frequency characteristics of the resonant beam of the body of the 四 (4) 在 在 在 在 在 在 在 : : : : : : : : : : : : : : Fig. 4 is a circuit diagram showing an example of the vibration wave detecting spread of the present invention of the sensor body. A circuit diagram showing an example of the "vibration (four) detecting means of the case where the detector is a capacitor. Fig. 7 is a diagram showing an example of a vibration wave detecting device in which a detector is provided with a resonant beam on both sides of a beam. n shows the sum of the outputs of the output resonant beams. (4) The vibration mode of the resistance mode is one of the devices. Fig. 9 is a view showing an example of a circuit turbidity of an example of a vibration wave detecting device using an I-resistance mode of a plurality of (four) lines. [Main component symbol description] 2 3 4 Sensor body Diaphragm Beam Termination plate 122268.doc -23- 200809169

51, 52, 53, 54, 5m, 51a, 51b, 52a, 52b, 5na, 5nb, 5ma, 5mb resonant beams 61, 62, 63, 64, 6m, piezoresistive 61a, 61b, 62a, 62b, 63a, 63b , 6ma, 6mb 7a, 7b power supplies 81, 82, 83, 8n, 8m, 81a, 81b, 82a, 82b, 83a, 83b, 8ma, 8mb such as ends 91, 92, 93, 9n, 9m, 91a, 91b, 92a, 92b, 93a, 93b, 9ma, 9mb electrodes 10a, 10b, 10c operational amplifier 20 semiconductor chip substrate

I22268.doc -24-

Claims (1)

200809169 X. Patent application scope: 1 · A vibration wave detection method, in which the H muscle % Di 恃 恃 芏 芏 互 互 互 ( ( ( ( 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测 测The special arrangement of a plurality of resonators is arranged such that each 笪a pulls this */, and the position of the vibrator is a logarithmic linear shape proportional to the logarithm of the specific resonance frequency, ... Let N be an integer of 2 or more, and select the above two complexes every time, and output the /,. signal to the output of the detector. The plural of the income of the different income $ 2 · such as the request! In the vibration wave detecting method, the plurality of resonators are arranged such that the resonance frequency of the resonators is arranged such that the ratio of the resonance frequencies of the resonators of the N-i roots of the plurality of resonators is constant. 3. The vibration wave detecting method of the requester, wherein the vibration wave detecting device of 3 or more is provided. The vibration wave detecting device is characterized in that it has a resonance sub-row (51 to 5 m), and the system is different from each other. a plurality of resonators (51 to 5 m) of a specific frequency resonance are arranged such that the positions of the respective resonators are logarithmic linear in proportion to the logarithm of the resonance frequency of 4; the detector (61 to 6 m) is detected by a vibration that propagates to the vibration wave of the resonator row and causes the vibration of the plurality of resonators; a plurality of output synthesis sections (l〇a~l〇c), which are set to two or more integers, each The above-mentioned plurality of resonators are selected every N-1, and the output of the detector 122268.doc 200809169 is added. 5. The vibration wave detecting device according to claim 4, wherein the resonance sub-row is performed so that the ratio of the resonance frequency of each of the plurality of resonators before the N-th resonance frequency is one 疋The resonant frequency of the system is arranged.疋 共振 共振 共振 · · · · · · 振动 振动 振动 振动 振动 振动 振动 振动 振动 振动 振动 振动 振动 振动/, in the middle, the N is more than 3 The detector is a piezoresistive octagonal detector system capacitor. 7. The vibration wave detecting device of claim 4, (61 to 6m) 〇8. The vibration wave detecting device of claim 4, the sexual component (81~ 8m, 91~9m). 122268.doc