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TW200807499A - Reflow method, pattern forming method and production method of TFT element for liquid crystal display - Google Patents

Reflow method, pattern forming method and production method of TFT element for liquid crystal display Download PDF

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Publication number
TW200807499A
TW200807499A TW096111313A TW96111313A TW200807499A TW 200807499 A TW200807499 A TW 200807499A TW 096111313 A TW096111313 A TW 096111313A TW 96111313 A TW96111313 A TW 96111313A TW 200807499 A TW200807499 A TW 200807499A
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Taiwan
Prior art keywords
film
resist
reflow
mask
surface treatment
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TW096111313A
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Chinese (zh)
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TWI345805B (en
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Yutaka Asou
Masatoshi Shiraishi
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H10P76/204—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

The surface treatment is given to the flow promotion area 104 of the lower film 101 from the resist 103 to the target area S1 by the surfactant, and the wettability is improved so that the resist may flow easily. When the resist 103 is softened, the softening resist 103 progresses to the flow promotion area 104, and is induced to the target area S1. Other side the resist 103 progressed to the keep-out area S2 where the surface treatment is not given is controlled oppositely in the reaction by increasing of the amount of the resist 103 toward the target area S1.

Description

200807499 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關一種例如可在薄膜電晶體（TFT)元件等 之半導體裝置用的圖案形成過程所利用的抗飩劑之回流法 ‘及使用此法的圖案形成方法及液晶顯示裝置用薄膜電晶體 * 元件之製造方法。 【先前技術】 近年半導體裝置的高積體化和微細化進步的發展。但 是’如果高積體化和微細化進步，半導體裝置的製造工程 就會複雜化，且製造成本會增加。因此，爲了大幅減低製 造成本，故檢討統合供微影之遮罩圖案的形成工程而令整 個工程數量縮短。 作爲削減遮罩圖案之形成工程數量的技術，係提供一 種使有機溶劑浸透到抗蝕劑，藉此使抗蝕劑軟化，且改變 抗鈾劑圖案的形狀，藉此就能省略遮罩圖案之形成工程的 回流設備（例如日本專利文獻1 )。而且，專利文獻1 中，記載著在使抗蝕劑軟化而回流之前，對基板施行氧電 漿處理、UV處理和對氟溶液的浸漬處理，或者藉由濕式 處理來進行上層膜的鈾刻，藉此改善濕潤性而易於回流。 〔專利文獻1〕日本特開2 0 Ο 2 - 3 3 4 8 3 0號公報（段落 0094 等） 【發明內容】 -4 - 200807499 (2) 〔發明欲解決的課題〕 可是，在記載於上述專利文獻1的濕潤性改善之手法 中’除了對氟溶液浸漬處理以外，並沒有以爲了促使回流 的表面改質爲主要目的而進行的手法，只不過是記載著抗 * 蝕劑遮罩表面的變質層之除去等，以其他目的而進行的次 • 要效果，其效果是有疑問。又，如果以濕潤性改善爲目的 重新追加對氟的浸漬處理工程，反而使得工程數増加，違 反削減工程數和縮短處理時間的要求。又，亦擔心因氟之 蝕刻作用，改變基板表面的圖案形成，使裝置性能受到不 良影響，未論及到實用上的手法。 像這樣，專利文獻1的方法，在快速擴散已軟化的抗 鈾劑，且儘量削減回流處理之工程時間的看法上存有課 題。又，就連使抗蝕劑軟化而擴散之際的方向及被覆面積 的控制亦未滿足，連此點都有課題。 因而，本發明其目的在於提供一種在抗鈾劑之回流處 理中，使已軟化的抗蝕快速地流動，並且高精度地控制其 流動方向及流動面積，因而可利用於圖案形成和液晶顯示 裝置用薄膜電晶體元件之製造的技術。 ' 〔用以解決課題之手段〕 爲了解決上述課題，本發明之第1觀點係提供一種回 流法，是對具有：下層膜；和以形成有在比該下層膜更上 層而露出有前述下層膜的露出區域與被覆有前述下層膜的 被覆區域的方式，形成圖案的抗蝕劑膜之被處理體’使前 -5- 200807499 (3) 述抗鈾劑膜的抗触劑軟化而流動，藉此來被覆前述露出區 域的一部分或全部的回流法，其特徵爲：包含用以促進已 軟化的前述抗蝕劑之流動，對前述露出區域事先施以表面 處理的工程。 * 在上述第1觀點的回流法中，將包含前述露出區域與 . 前述被覆區域的被處理體之表面整體進行表面處理之後， 部分除去前述被覆區域的抗蝕劑爲佳。 又，藉由界面活性劑進行前述表面處理爲佳。 又，使用膜厚因部位而變化，且至少具有：膜厚較厚 的厚膜部；和對該厚膜部而言，相對上膜厚較薄的薄膜部 之形狀的抗蝕劑膜，作爲前述抗蝕劑膜爲佳。此時，藉由 前述厚膜部與前述薄膜部的配置，來控制已軟化的前述抗 鈾劑的流動方向或被覆面積爲佳。 在上述第1觀點的回流法中，以使用其端部，比該抗 鈾劑之正下方的端部更向著前述露出區域的上方突出之形 狀的抗鈾劑膜，作爲前述抗蝕劑膜爲佳。 又，使前述抗蝕劑在有機溶劑環境中變形爲佳。又， . 也可藉由使用半遮罩的半曝光處理及其後的顯像處理，來 形成前述抗蝕劑膜的圖案形成。 又，本發明之第2觀點是提供一種圖案形成方法，是 包含：在比被處理體的被蝕刻膜更上層形成抗飩劑膜的抗 蝕劑膜形成工程；和將前述抗蝕劑膜形成圖案的遮罩圖案 化工程；和將前述已圖案形成的抗蝕劑膜再進行顯像處 理，而使其被覆面積縮小的再顯像處理工程；和使前述抗 -6- 200807499 (4) 蝕劑膜的抗蝕劑軟化而變形，並且被覆前述被蝕刻膜之 靶區域的回流工程；和以變形後的前述抗蝕劑作爲遮罩 來蝕刻前述被蝕刻膜之露出區域的第1蝕刻工程；和除 變形後的前述抗鈾劑的工程；和對藉由除去變形後的前 抗蝕劑而再露出的前述被飩刻膜之標靶區域進行蝕刻的 2蝕刻工程，更包含：在前述回流工程之前，先以促進 軟化的前述抗蝕劑的流動，朝向前述被蝕膜的標靶區域 方式，對前述被處理體事先施以表面處理的工程。 在上述第2觀點的圖案形成方法中，藉由界面活性 施行前述表面處理爲佳。此時，更包含：在前述再顯像 理工程之前除去前述抗蝕劑膜之表面變質層的前處理 程；和在該前處理工程之後，洗淨前述被處理體的洗淨 程，在前述洗淨工程的洗淨液中，添加前述界面活性劑 來施行表面處理亦可。在此，在表面處理後的前述再顯 處理工程中，部分地除去前述抗蝕劑，且露出未被表面 理的下層膜表面爲佳。 又，更包含：在前述再顯像處理工程之後，洗淨被 理體的洗淨工程，且在前述洗淨工程的洗淨液中，添加 述界面活性劑，來施行表面處理亦可。或者，在前述回 工程之前，在含有前述界面活性劑的藥液環境中，對被 理體施行表面處理亦可。 又，在上述第2觀點中，前述抗鈾劑膜，是爲膜厚 部位而變化，且至少具有膜厚較厚的厚膜部與對該厚膜 而言，相對上膜厚較薄的薄膜部的形狀，在前述回流工 標 去 述 第 已 之 劑 處 工 工 像 處 處 、r· 刖 流 處 因 部 程 200807499 (5) 中，藉由前述厚膜部與前述薄膜部的配置，來控制前述軟 化抗蝕劑之流動方向或被覆面積爲佳。 又，在上述第2觀點中，以使用其端部，比該抗蝕劑 之正下方的下層膜的端部更向著前述標靶區域的上方突出 之形狀的抗蝕劑膜，作爲前述抗蝕劑膜爲佳。 又，在前述回流工程中，使前述抗蝕劑在有機溶劑環 境中變形爲佳。進而，藉由使用半遮罩的半曝光處理及其 後的顯像處理，來施行前述遮罩圖案化工程爲佳。 進而，在上述第2觀點中，被處理體是在基板上形成 閘極線及閘極電極，並且形成有覆蓋這些的閘極絕緣膜， 更在前述閘極絕緣膜上，由下依序形成有：a - Si膜、電 阻接觸用S i膜及源極、汲極用金屬膜的層積構造體，且 前述被餽刻膜是前述電阻接觸用Si膜爲佳。 本發明之第3觀點是提供一種液晶顯示裝置用薄膜電 晶體之製造方法，其包含：在基板上形成閘極線及閘極電 極的工程；和形成覆蓋前述閘極線及前述閘極電極之閘極 絕緣膜的工程；和在前述閘極絕緣膜上，由下依序堆積a 一 Si膜、電阻接觸用Si膜及源極、汲極用金屬膜的工 程；和在前述源極、汲極用金屬膜上形成抗蝕劑膜的工 程；和將前述抗蝕劑膜進行半曝光處理及顯像處理，來形 成源極電極用抗触劑遮罩及汲極電極用抗蝕劑遮罩的遮罩 圖案化工程；和以前述源極電極用抗蝕劑遮罩及前述汲極 電極用抗蝕劑遮罩作爲遮罩，來蝕刻前述源極、汲極用金 屬膜，以形成源極電極用金屬膜與汲極電極用金屬膜，並 -8- 200807499 (6) 且使下層的電阻接觸用S i膜露出於前述源極電極用金屬 膜與前述汲極電極用金屬膜之間的通道區域用凹部的工 程；和將已圖案形成的前述源極電極用抗蝕劑遮罩及前述 汲極電極用抗触劑遮罩進行再顯像處理，而使各個被覆面 * 積縮小的工程再顯像處理；和令有機溶劑作用於縮小後的 前述源極電極用抗蝕劑遮罩及前述汲極電極用抗飩劑遮 罩，而令已軟化的軟化抗蝕劑變形，藉此覆蓋前述源極電 極用金屬膜與前述汲極電極用金屬膜之間的通道區域用凹 部內的前述電阻接觸用Si膜的回流工程；和以變形後的 前述抗蝕劑、前述源極電極用金屬膜及前述汲極電極用金 屬膜作爲遮罩，來蝕刻下層之前述電阻接觸用 Si膜及前 述a - S i膜的工程；和除去變形後的前述抗鈾劑，並使前 述電阻接觸用Si膜再度露出於前述源極電極用金屬膜與 前述汲極電極用金屬膜之間的通道區域用凹部內的工程； 和以前述源極電極用金屬膜與前述汲極電極用金屬膜作爲 遮罩，來蝕刻露出於該些之間的前述通道區域用凹部的前 述電阻接觸用 Si膜的工程，更包含：在前述回流工程之 前，先以促進前述軟化抗鈾劑的流動，朝向前述通道區域 用凹部內的前述電阻接觸用Si膜之方式，對前述基板事 ' 先施以表面處理的工程。 在上述第3觀點中，藉由界面活性劑施行前述表面處 理爲佳。此時，更包含：在前述再顯像處理工程之前，除 去前述抗鈾劑膜之表面變質層的前處理工程；和在該前處 理工程之後，洗淨前述基板的洗淨工程，就能在前述洗淨 - 9- 200807499 ⑺ 工程的洗淨液中，添加前述界面活性劑，來施行表面 理。在此，在表面處理後的前述再顯像處理工程中，部 地除去前述抗蝕劑膜，且令未被表面處理的表面，露出 前述源極電極用金屬膜及前述汲極電極用金屬膜亦可。 又，更包含：在前述再顯像處理工程之後，洗淨前 基板的洗淨工程，且在前述洗淨工程的洗淨液中，添加 述界面活性劑，來施行表面處理亦可。或者，在前述回 工程之前，在含有前述界面活性劑的藥液環境中，對前 基板施行表面處理亦可。 又，在上述第3觀點中，前述抗蝕劑膜，是爲膜厚 部位而變化，且至少具有膜厚較厚的厚膜部與對該厚膜 而言，相對上膜厚較薄的薄膜部的形狀，在前述回流工 中，藉由前述厚膜部與前述薄膜部的配置，來控制前述 化抗蝕劑之流動方向或被覆面積爲佳。此時，在前述回 工程中，在臨近於前述源極電極用金屬膜與前述汲極電 用金屬膜之間的前述通道區域用凹部之側，設置前述厚 部亦可。或者，在前述回流工程中，在臨近於前述源極 極用金屬膜與前述汲極電極用金屬膜之間的前述通道區 用凹部之側，設置前述薄膜部亦可。 進而，在上述第3觀點中，在前述回流工程中，使 前述抗蝕劑膜的端部較前述源極電極用金屬膜的端部及 述汲極電極用金屬膜的端部更突出於前述通道區域用凹 之突出形狀的抗蝕劑膜爲佳。 又，在前述回流工程中，使前述抗鈾劑在有機溶劑 處 分 於 述 刖 流 述 因 部 程 軟 流 極 膜 電 域 用 刖 部 TS3. -10- 200807499 (8) 境中變形爲佳： 進而，藉由使用半遮罩的半曝光處理及其後的顯像處 理，來施行前述遮罩圖案化工程爲佳。 本發明之第4觀點係提供一種控制程式’是以在電腦 上動作，於實行時，在處理室內，施行上述第1觀點之回 流法的方式，來控制回流處理裝置。 本發明之第5觀點係提供一種電腦可讀取的記憶媒 體，是記憶著在電腦上動作的控制程式之電腦可讀取的記 憶媒體，前述控制程式，是以在實行時，在處理室內，施 行上述第1觀點之回流法的方式來控制回流處理裝置。 本發明之第6觀點係提供一種回流處理裝置，其具 備：具備用來載置被處理體之支撐台的處理室；和用以對 前述處理室內供應有機溶媒的氣體供給手段；和控制成在 前述處理室內施行上述第1觀點之回流法的控制部。 〔發明效果〕 若藉由本發明，就能在回流處理前，先以促進已軟化 的抗蝕劑之流動的方式，事先施行表面處理，藉此擴散到 使抗蝕劑快速地流動爲目的的區域，在短時間結束回流處 理。又，藉由調整施行表面處理的時間點，也能控制已軟 化的抗蝕劑之流動方向和流動面積（擴散方向）。 而且，將本發明之回流法，應用於重複進行以抗蝕劑 作爲遮罩的飩刻工程之薄膜電晶體元件等的半導體裝置之 製造，藉此不但可省遮罩化和削減工程數，還能實現處理 -11 - 200807499 (9) 時間的縮短化。又，由於鈾刻精度提昇，因此也能對應半 導體裝置的高積體化和微細化。 【實施方式】 '〔用以實施發明的最佳形態〕 •以下，邊參照圖面，邊針對本發明之最佳形態做說 明。 第1圖是表示可適合於利用在本發明之回流法的回流 處理系統之整體的槪略俯視圖。在此，乃舉例說明具 備：施行爲了將形成在LCD用玻璃基板（以下簡稱「基 板」）G之表面的抗鈾劑膜，於顯像處理後軟化而變形， 且再被覆之回流處理的回流處理單元；和爲了在該回流處 理之前先進行的再顯像處理及前述理的再顯像處理/除去 單元（REDEV/ REMV )的回流處理系統。該回流處理系 統1 〇〇具備：載置用來收容複數基板G的卡匣站（搬出入 部）1 ;和對基板G施行包含回流處理及再顯像處理的一 連串處理之複數處理單元的處理站（處理部）2 ;和用來控制 回流處理系統1 00之各構成部的控制部3。再者，在第1 圖中，回流處理系統1 0 0的長邊方向爲X方向，在平面上 與X方向直交的方向爲Y方向。 卡匣站1是鄰接於處理站2之其中一方的端部而配 置。該卡匣站1是在卡匣C與處理站2之間，具備用以施 行基板G之搬出入的搬送裝置η，在該卡匣站1中對外 部進行卡匣C的搬出入。又，搬送裝置1 1係具有可在沿 -12- 200807499 (10) 著卡匣C之排列方向的Y方向而設置的搬送路徑1 0上移 動的搬送臂11a。該搬送臂11a是以可朝X方向之進出、 後退，且可朝上下方向之昇降及旋轉地被設置，且在卡匣 C與處理站2之間進行基板G之交付的方式所構成。 處理站2，係具備用以對基板G實施抗蝕劑之回流處 • 理、進行該前處理及再顯像處理之際的一連串工程的複數 處理單元。在該些處理站一片片的處理基板G。又，處理 站2，係具有基本上朝X方向延伸的基板G搬送用之中央 搬送路徑2 0，且隔著該中央搬送路徑2 0，在其兩側以臨 近於中央搬送路徑20的方式被配置著各處理單元。 又，在中央搬送路徑20，係在與各處理單元之間具備 有用以進行基板G之搬出入的搬送裝置21，且具有可朝 處理單元之排列方向的X方向移動的搬送臂2 1 a。進而， 該搬送臂21a是可朝Y方向之進出、後退，且可朝上下方 向之昇降及旋轉地被設置，且以在與各處理單元之間進行 基板G之搬出入的方式所構成。 沿著處理站2之中央搬送路徑20而在其中一側，從 卡匣站 1之側依序排列有：再顯像處理/除去單元 (REDEV/ REMV ) 30及回流處理單元（RE F L W ) 6 0，且 ' 沿著中央搬送路徑20在另一側，一列地排列著三個加熱 /冷卻處理單元（HP/ COL ) 80a、80b、80c。各加熱/ 冷卻處理單元（HP/COL) 80a、80b、80c，是朝垂直方 向被多段地層積配置（圖示省略）。 再顯像處理/除去處理單元（REDEV/REMV) 30, -13- 200807499 (11) 是在回流處理前先用以除去在圖未示的其他處理系統中所 進行的金屬蝕刻等之處理時的變質層的前處理以及將抗蝕 劑之圖案再加以顯像之再顯像處理的處理單元。又，如後 所述，在該再顯像處理/除去單元（REDEV/REMV) 30 中，對基板G，吐出含有界面活性劑的藥液，就能施行用 . 以促進抗蝕劑之流動的表面處理。 再顯像處理/除去單元（REDEV/REMV) 30，具備 旋轉式的液處理機構，且以邊保持基板G邊以一定速度令 其旋轉，從爲了再顯像處理的再顯像藥液吐出噴嘴及爲了 前處理的除去液吐出噴嘴，向著基板G吐出各種處理液， 進行再顯像藥液的塗佈或前處理（抗蝕劑表面變質層的除 去處理）的方式所構成。 在此，針對再顯像處理/除去單元（REDEV / REMV) 30邊參照第2圖及第3圖邊做說明。第2圖是再 顯像處理/除去單元（REDEV/REMV) 30的俯視圖，第 3圖是再顯像處理/除去單元（REDEV/REMV) 30中的 杯形部分之剖面圖。如第2圖所示，再顯像處理/除去單 元（REDEV / REMV ) 30是整體藉由洗滌槽31被包圍。 又，如第3圖所示玄，在顯像處理/除去單元（REDEV/ ' REMV ) 30中，藉由馬達等之旋轉驅動機構33，可旋轉地 設有機械式保持基板G的保持手段例如：旋轉夾頭3 2， 在該旋轉夾頭3 2的下側，配置有用來包圍旋轉驅動機構 3 3的蓋板3 4。旋轉夾頭3 2可藉由圖未示的昇降機構來昇 降，在上昇位置中，在與搬送臂2 1 a之間進行基板G的交 -14- 200807499 (12) 付。該旋轉夾頭3 2是形成可藉由真空吸引力等，來吸附 保持基板G。 在蓋板3 4的外周圍，係分開的設置兩個外杯3 5、 3 6，在該兩個外杯3 5、3 6之間的上方，昇降自如地設有 主要讓再顯像藥液往下流的內杯3 7，在外杯3 6的外側， • 則是與內杯3 7 —體且昇降自如地設有主要讓洗淨液往下 流的外杯3 8。再者，於第3圖中，朝向紙面而在左側，是 表示再顯像藥液之排出時，使內杯3 7及外杯3 8上昇的位 置’在右側，是表示洗淨液之排出時，使該些下降的位 置。 在外杯3 5之内周側底部，配設有在旋轉乾燥時用以 在單元內進行排氣的排氣口 3 9，在兩個外杯3 5、3 6間， 主要設有用來排出再顯像藥液的排液管4 0 a，在外杯3 6之 外周側底部，主要設有用來排出洗淨液的排液管40b。 在外杯3 8的其中一側，如第2圖所示，設有再顯像 藥液及除去液供給用的噴嘴保持臂4 1，在噴嘴保持臂 4 1 ’收納有：用以對基板G塗佈再顯像藥液所用的再顯像 藥液吐出噴嘴42a及除去液吐出噴嘴42b。 噴嘴保持臂41，係以沿著導軌4 3之長度方向，藉由 皮帶區動等之驅動機構4 4，橫切過基板g而移動的方式 所構成’藉此在再顯像樂彳仪之塗佈時或除去液之吐出時， 噴嘴保持臂4 1則是以一邊從再顯像藥液吐出噴嘴4 2 a吐 出再顯像藥液，或者從除去液吐出噴嘴42b吐出除去液， 一邊掃描已靜止的基板G的方式所形成。 -15- 200807499 (13) 又，再顯像藥液吐出噴嘴42a及除去液吐出噴嘴 4 2b，是以在噴嘴待機部45待機的方式所形成，且在該噴 嘴待機部45，設有用來洗淨再顯像藥液吐出噴嘴42a、除 去液吐出噴嘴42b的噴嘴洗淨機構46。 ' 在外杯3 8的另一側，設有純水等之洗淨液吐出用的 • 噴嘴保持臂47，且在噴嘴保持臂47的前端部分，設有洗 淨液吐出噴嘴4 8。作爲洗淨液吐出噴嘴4 8，例如：可使 用具有管狀之吐出口的噴嘴。噴嘴保持臂47是藉由驅動 機構49沿著導軌43的長度方向而滑動自如地被設置，一 邊從洗淨液吐出噴嘴4 8吐出洗淨液、一邊在基板G上掃 描。又，可在從洗淨液吐出噴嘴4 8被吐出的洗淨液，添 加用以對基板G施行表面處理的界面活性劑。作爲用以施 行表面處理的界面活性劑，例如可使用氟界面活性劑等。 再者，雖然也可以不同於洗淨液吐出噴嘴4 8，而設置含有 表面處理用的界面活性劑之藥液吐出噴嘴（圖未示），但 由裝置簡化的觀點來看，洗淨液吐出噴嘴4 8能一倂用於 普通的洗淨處理和同時施行表面處理的洗淨處理爲佳。 其次’說明使用上述之再顯像處理/除去單元 (REDEV/ REMV ) 30的前述理及再顯像處理工程的槪 略。首先，使內杯3 7與外杯3 8位在下段位置（第3圖之 右側所示的位置），將保持基板G的搬送臂2 1 a插入到再 顯像處理/除去單元（REDEV/REMV) 30內，配合該時 間點，使旋轉夾頭3 2上昇，而朝旋轉夾頭3 2交付基板 G。讓搬送臂21a後退到再顯像處理/除去單元（rEDEv -16 - 200807499 (14) / REMV ) 30外之後，使載置著基板G的旋轉夾頭32降 下並保持在一定位置。而且，將噴嘴保持臂4 1移動、配 置在內杯3 7內的一定位置，使昇降機構5 0 b伸張並且只 議除去液吐出噴嘴4 2 b位於下方而保持，一邊在基板G上 掃描、一邊使用除去液吐出噴嘴42b將鹼性的除去液吐出 • 到基板G上。在此，作爲除去液，例如可使用強鹼水溶 液。在經過一定的反應時間之前的期間，使昇降機構5 0 b 收縮，而讓除去液吐出噴嘴42b返回到上方的位置而保 持，且使得噴嘴保持臂4 1退出內杯3 7及外杯3 8，換成驅 動噴嘴保持臂47，而讓洗淨液吐出噴嘴48移動到基板G 上的一定位置。接著，使內杯3 7及外杯3 8上昇，保持在 上段位置（第3圖之左側位置）。 而且，以低速讓基板G旋轉，並與進入到甩開基板g 上之除去液的動作大致同時地從洗淨液吐出噴嘴4 8吐出 洗淨液，進而與該些動作大致同時地開始進行藉由排氣口 3 9的排氣動作。基板G開始旋轉，從基板G向其外周飛 散的除去液及洗淨液，會碰觸到內杯3 7之錐形部或外周 • 壁（側面的垂直壁）而朝下方被導入，且從排液管40a被 排出。也可在該除去液塗佈後的洗淨處理所用的洗淨液 中，添加用以對基板G進行表面處理的界面活性劑。在該 洗淨液中添加界面活性劑的情形下，也可將後面之再顯像 藥液塗佈後的洗淨處理所用的洗淨液，切換爲普通的例如 純水。 從基板G的旋轉開始到經過一定時間後，在一邊吐出 -17- 200807499 (15) 洗淨液、還一邊讓基板G旋轉的狀態下，使內杯3 7與外 杯3 8下降而保持在下段位置。在下段位置，基板G之表 面的水平位置，大致符合外杯3 8之錐形部位置的高度。 而且，爲了減少除去液的殘液，將基板G的轉數，調到比 爲了甩開除去液之開始旋轉動作時還要大。提高該基板G ， 之轉數的操作，也可以在與內杯3 7和外杯3 8之下降動作 同時或其前後之錯開的階段來進行。如此一來·從基板G 飛散之主要由洗淨液所形成的處理液，會碰觸到外杯3 8 之錐形部或外周壁而從排液管40b被排出。其次，停止洗 淨液的吐出並將洗淨液吐出噴嘴4 8收納到一定的位置， 進一步提高基板G的轉數並保持一定時間。亦即，藉由高 速旋轉，進行使基板G乾燥的旋轉乾燥。 其次，將噴嘴保持臂41移動、配置到內杯3 7內的一 定位置，使昇降機構5 0a伸張並且只讓再顯像藥液吐出噴 嘴42a位在下方而保持，且一邊在基板G上掃描、一邊用 再顯像藥液吐出噴嘴42a將一定的再顯像藥液塗佈在基板 G上，形成再顯像藥液熔融部分。形成再顯像液熔融部分 . 之後，在經過一定之再顯像處理時間（再顯像反應時間） 之前的期間，藉由昇降機構5 Ob，讓再顯像藥液吐出噴嘴 * 42a返回到上方的位置而保持，且使得噴嘴保持臂4 1退出 內杯3 7及外杯3 8，換成驅動噴嘴保持臂47，而讓洗淨液 吐出噴嘴4 8保持在基板G上的一定位置。接著，使內杯 37及外杯38上昇，保持在上段位置（第3圖之左側位 置）。 -18- 200807499 (16) 而且，以低速讓基板G旋轉’並與進入到甩開基板G 上之除去液的動作大致同時地從洗淨液吐出噴嘴4 8吐出 洗淨液，進而與該些動作大致同時地開始進行藉由排氣D 3 9的排氣動作。就是’在經過再顯像反應時間之前’排氣 口 3 9爲未動作之狀態爲佳’藉此’就不會在形成於基板 • G上的再顯像藥液熔融部分’產生因排氣口 3 9之動作引 起的氣流產生等的不良影響。再者’在此所吐出的再顯像 處理後的洗淨液中，也可添加用以對基板G施行表面處理 的界面活性劑。 基板G開始旋轉，從基板G向其外周飛散的再顯像 藥液及洗淨液，會碰觸到內杯3 7之錐形部或外周壁（側 面的垂直壁）而朝下方被導入，且從排液管40a被排出。 從基板G的旋轉開始到經過一定時間後，在一邊吐出洗淨 液、還一邊讓基板G旋轉的狀態下，使內杯3 7與外杯3 8 下降而保持在下段位置。在下段位置，基板G之表面的水 平位置，大致符合外杯3 8之錐形部位置的高度。而且， 爲了減少除去液的殘液，將基板G的轉數，調到比爲了甩 開再顯像藥液之開始旋轉動作時還要大。提高該基板G之 轉數的操作，也可以在與內杯3 7和外杯3 8之下降動作同 ' 時或其前後之錯開的階段來進行。如此一來·從基板G飛 散之主要由洗淨液所形成的處理液，會碰觸到外杯3 8之 錐形部或外周壁而從排液管40b被排出。其次，停止洗淨 液的吐出並將洗淨液吐出噴嘴4 8收納到一定的位置，進 一步提高基板G的轉數並保持一定時間。亦即，藉由高速 -19- 200807499 (17) 旋轉，進行使基板G乾燥的旋轉乾燥。 如以上所述，結束再顯像處理/除去單元（REDEV/ REM V ) 3 0的一連串處理。而且，根據與前述相反的順 序，藉由搬送臂21a，從再顯像處理/除去單元（REDEV / REMV ) 30搬出該處理後的基板G。 •另一方面，在處理站2的回流處理單元REFLW ) 60 中，讓形成在基板G上的抗蝕劑，在有機溶媒例如稀釋劑 環境中軟化並進行再被覆的回流處理。又，如後所述，在 該回流處理單元（REFLW) 60中，藉由將基板G曝露在 含有界面活性劑的藥液環境中，就能施行用以促進抗蝕劑 之流動的表面處理。 在此，針對回流處理單元（REFLW ) 60的構成，做 更詳細說明。第4圖是回流處理單元（REFLW ) 60的槪 略剖面圖。回流處理單元（REFLW) 60具有真空室61。 真空室61具有：下部真空室61a、抵接於該下部真空室 61a之上部的上部真空室61b。上部真空室61b和下部真 空室6 1 a，可藉由圖未示的開閉機構被開閉地構成，在開 狀態時，藉由搬送裝置2 1進行基板G的搬出入。 在該真空室61內設有：水平支撐基板G的支撐台 62。支撐台62是利用熱傳導率優的材質例如：鋁所構 成。 在支撐台6 2是藉由圖未不的昇降機構所驅動，且以 貫通支撐台62的方式設有使基板G昇降的三根昇降銷63 (在第4圖中，圖只表示兩根）。該昇降銷63，是在昇降 -20- 200807499 (18) 銷63與搬送裝置21之間交付基板G之際，從支撐台42 提起基板G，而將基板G支撐在一定的高度位置，基板g 的回流處理中，例如：以與支撐台6 2之上面同高度的方 式來保持其前端。 在下部真空室61a的底部形成有排氣口 64a、64b，且 • 在該排氣口 64a、64b連接著排氣系統64。而且，真空室 6 1內的環境氣體，是通過該排氣系統64而被排氣。 在支撐台62的內部，設有溫度調節媒體流路65，且 在該溫度調節媒體流路6 5，例如經由溫度調節媒體導入管 6 5 a而導入溫度冷卻水等的溫度調節媒體，且從溫度調節 媒體排出管65b被排出而循環，其熱度（例如冷熱）是經 由支撐台6 2而對基板G傳熱，藉此基板G的處理面就會 被控制在所要的溫度。 在真空室6 1的頂壁部分，是以與支撐台62對向的方 式設有淋浴頭6 6。在該淋浴頭6 6的下面6 6 a，設有多數 的氣體吐出孔66b。 又，在淋浴頭66的上部中央，設有氣體導入部67, 且該氣體導入部6 7是連通於形成在淋浴頭6 6之內部的空 間68。在氣體導入部67連接有氣體供給配管69，且該氣 體供給配管69，分歧爲配管69a和配管69b。在配管 69a，連接有使有機溶媒例如：稀釋劑進行氣化所供給的 起泡槽70，且在其途中設有開關閥7 1。 在起泡槽7 0的底部配備有：作爲用以使稀釋劑氣化 的氣泡產生手段，並連接到圖未示的N2氣體供給源的N2 -21 - 200807499 (19) 氣體供給配管7 4。在該N 2氣體供給配管7 4設有：質流 控制器72a及開閉閥73a。又，起泡槽70具備用以將貯留 在內部的稀釋劑之溫度’調節到一定溫度之圖未的溫度調 節機構。而且，以一邊從圖未示的N2氣體供給源將N2 氣體利用質流控制器7 2來控制流量、一邊導入到起泡槽 • 7 0的底部，藉此讓溫度調節到一定溫度的起泡槽7 0內的 稀釋劑氣化，且經由配管6 9 a、氣體供給配管6 9被導入到 真空室6 1內的方式所構成。 又，在分歧的另一方之配管69b，連接有表面處理液 供給源7 8，且在其途中設有：質流量控制器7 2 b及其前後 的開閉閥7 1、73b。表面處理液供給源78，具備例如圖未 示的氣化器或霧氣產生裝置等，且以將含有界面活性劑的 藥液形成氣狀或霧狀，並一邊藉由質流量控制器72b做流 量控制、一邊經由氣體供給配管69而導入到真空室6 1內 的方式所構成。 又，在淋浴頭66的上部之周緣部，設有複數沖洗氣 導入部75，在各沖洗氣導入部75，連接有：例如將作爲 沖洗氣的N 2氣體供給到真空室6 1內的沖洗氣供給配管 76。沖洗氣供給配管76，是連接到圖未示的沖洗氣供給 源，且在該途中設有開閉閥7 7。 在此種構成的回流處理單元（REFLW ) 60中，先從 下部真空室6 1 a打開上部真空室6 1 b，在該狀態下，藉由 搬迭:裝置2 1的搬送臂2 1 a，搬入已經完成則處理及再顯像 處理，且具有形成圖案之抗飩劑的基板G，且加以載置在 -22- 200807499 (20) 支撐台62。而且，讓上部真空室61b與下部真空 接，將真空室61閉合。在此，在回流處理之前 處理單元（REFLW ) 60內施行表面處理的情況 配管69b的開閉閥7 1、73，且一邊藉由質流控制 控制流量、一邊從表面處理液供給源78將含有 劑的氣狀或霧狀的藥液，經由氣體供給配管6 9、 部67，導入到淋浴頭66的空間68，且使其從氣 6 6b被吐出。藉此，真空室61內，就會形成一定 液環境，且對載置在真空室6 1內的支撐台6 2的 行表面處理。 其次，將配管69b的開閉閥71、73b閉合， 配管69a的開閉閥71及N2氣體供給配管74 7 3，且一邊藉由質流控制器7 2 a來調節n 2氣體 控制稀釋劑的氣化量、一邊從起泡槽7 0將已氣 劑經由配管69a、氣體供給配管69、氣體導入部 入到淋浴頭66的空間68，且使其從氣體吐出孔 出。藉此，真空室6 1內，就會形成一定濃度的 . 境。 因在已被載置於真空室61內之支撐台62 上，設有已經形成圖案的抗蝕劑，故該抗鈾劑被 釋劑環境中，藉此讓稀釋劑浸透到抗蝕劑。藉此 會軟化，其流動性提高，產生變形並將基板G表 區域（標靶區域），以變形抗蝕劑被覆。此時， 媒體會導入到被設置在支撐台6 2之內部的溫度 室6 1 a抵 ，在回流 下，打開 器72b來 界面活性 氣體導入 體吐出孔 濃度的藥 基板G施 並且打開 的開閉閥 的流量而 化的稀釋 67，而導 6 6 b被吐 稀釋劑環 的基板G 曝露在稀 ，抗飩劑 面的一定 溫度調節 調節媒體 -23- 200807499 (21) 流路65，藉此其熱度會經由支撐台62而對基板G傳熱， 藉此基板G的處理面就會被控制在所要的溫度例如20 °C。包含從淋浴頭66向著基板G之表面被吐出的稀釋劑 之氣體，接觸到基板G的表面之後，會流向排氣口 64a、 64b，且從真空室61內朝排氣系統64排氣。 . 如以上方式結束回流處理單元（REFLW) 60中的回 流處理之後，一邊繼續排氣、一邊打沖洗氣供給配管76 上的開閉閥7 7，且經由沖洗氣導入部7 5而對真空室6 1內 導入作爲沖洗氣的N 2氣體，來置換真空室內環境。然 後，從下部真空室6 1 a打開上部真空室6 1 b，按照與前述 相反的順序，藉由搬送臂21a從回流處理單元（REFLW) 60搬出回流處理後的基板G。 在三個加熱/冷卻處理單元（HP/COL) 80a、80b、 8〇c，多段重合而構成有：分別對基板G進行加熱處理的 加熱板單元（HP )、對基板G進行冷卻處理的冷卻板單 元（COL )(圖示省略）。利用該加熱/冷卻處理單元 (HP/ COL ) 8 0a、80b、80c，對前處理後 '再顯像處理 後及回流處理後的基板G，配合需要進行加熱處理或冷卻 處理。 如第1圖所示，回流處理系統1 00的各構成部，係爲 受連接於具備控制部3的CPU之製程控制器90所控制的 構成。在製程控制器9 0連接有由：工程管理者爲了管理 回流處理系統1 00，進行指令之輸入操作等的鍵入、將回 流處理系統1 0 0的作業狀況加以可視化而顯示的顯示器等 -24- 200807499 (22) 所構成的使用者介面9 1。 又，在製程控制器90連接有··儲存著記錄有利用製 程控制器90來實現在回流處理系統1 〇〇所實行的各種處 理的控制程式和處理條件資料等的程序的記億部92。 而且，配合需要，利用來自使用者介面91的指示 • 等，將任意的程序從記憶部92叫出，而於製程控制器90 實行，在製程控制器9 0的控制下，在回流處理系統1 〇 〇 執行所要的處理。又，前述程序，例如可利用儲存在CD 一 ROM、硬碟、軟碟、快閃記憶體等的電腦可讀取記憶媒 體之狀態者，或者也可從其他的裝置，例如經由專用電線 而隨時傳送利用。 在如以上所構成的回流處理系統1 00中，先在卡匣站 1中，讓搬送裝置11的搬送臂11a，進出收容未處理之基 板G的卡匣C而取出一片基板G。基板G是從搬送裝置 1 1的搬送臂1 1 a，被交付到處理站2之中央搬送路徑2 0 中的搬送裝置21的搬送臂21a，藉由該搬送裝置21，朝 再顯像處理/除去單元（REDEV/ REMV ) 30被搬入。而 且，在再顯像處理/除去單元（REDEV/REMV) 30進行 前處理及再顯像處理，更配合需要而施行表面處理之後， 基板G會從再顯像處理/除去單元（REDEV/ REMV ) 30 藉由搬送裝置2 1被取出，且被搬入到加熱/冷卻處理單 元（HP/COL) 80a、80b、80c的任一單元。而且，在各 加熱/冷卻處理單元（HP/COL) 80a、80b、80c中，施 行一定之加熱、冷卻處理的基板G，會朝回流處理單元 -25- 200807499 (23) (REFLW ) 60被搬入，在此進行回流處理。。再者，未 在再顯像處理/除去單元（REDEV/REMV) 30實施表面 處理的情況下，可在回流處理單元（REFLW ) 60施行藉 由藥劑環境的表面處理。回流處理後，配合需要而在各加 熱/冷卻處理單元（HP/COL) 80a、80b、80c，施行一 • 定的加熱、冷卻處理。結束這樣一連串處理的基板G，則 藉由搬送裝置2 1被交付到卡匣站1的搬送裝置1 1，且收 容在任意的卡匣C。 其次，針對在回流處理單元（REFLW ) 60所進行的 回流法之原理做說明。第5A圖〜第5D圖、第6A圖〜第 6D圖及第7A圖〜第7D圖，分別爲說明本發明之回流法 的槪念的圖面。 第5A圖〜第5D圖是說明本發明之其中一實施形態 的回流法，簡略表示形成在基板G之表面附近的抗蝕劑 1 03的剖面。在基板G形成有下層膜1 0 1，且在其上形成 有已形成圖案的抗鈾劑1 03。 在第5 A圖的範例中，以在下層膜1 〇 1表面存在有標 靶區域 S i，且對該標靶區域 S1流入已軟化的抗飩劑 1 〇 3，利用抗飩劑1 0 3來被覆標靶區域S i爲其目的。另一 方面，在之間隔著抗蝕劑1 〇 3而在與前述標靶區域s i相 反之側的下層膜1 〇 1上，例如存在有蝕刻區域等的禁止區 域S2。在該禁止區域S2，需要避開因抗飩劑1〇3引起的 被覆。 假設從第5A圖的狀態，在例如使稀釋劑等的有機溶 -26- 200807499 (24) 媒接觸且浸透到抗蝕劑的情況下，已軟化的抗鈾劑1 〇 3， 應該以同速度朝標靶區域Si及禁止區域S2之兩者的方向 行進。因而，如果抗蝕劑10 3至標靶區域S i的距離，等 於抗蝕劑1 0 3至禁止區域S 2的距離，標靶區域S i及禁止 區域S2之兩者，一對藉由抗蝕劑103而被覆，或兩者也 • 在被覆不足的狀態下，應該停止抗蝕劑1 0 3的流動。像這 樣，標靶區域S i的被覆未確實施行，或者抗蝕劑1 03到 達不希望抗蝕劑被覆之禁止區域S2的話，例如以回流後 的抗蝕劑1 03爲遮罩所使用的蝕刻形狀之精度下降，且會 引起薄膜電晶體元件等之裝置不良和良品率降低。回流處 理的此種缺點，其原因在於無法控制藉由有機溶媒使其軟 化的抗蝕劑103之回流方向。 於是在本實施形態中，如第5B圖所示，藉由界面活 性劑對抗蝕劑1 03至標靶區域S i的下層膜1 0 1的流動促 進區域1 0 4，施行表面處理，讓已軟化的抗飩劑1 0 3易於 流動的方式來改善其濕潤性。再者，於施行表面處理的流 動促進區域1 04附上波線。在此，雖未特別討論藉由表面 處理形成有流動促進區域1 04之下層膜1 0 1的種類，但例 如由鋁合金和鈦、鎂等之材質所製成的金屬膜爲對象。像 * 這樣，作爲在基板G的表面，一部分且選擇性地形成流動 促進區域1 04的手法，於後面舉具體例做詳述，例如，可 舉事先藉由曝光處理等，使抗飩劑1 0 3的膜厚具有段差之 後，對基板G的全面施行表面處理，進行再顯像處理和灰 化處理來除去抗鈾劑1 的薄膜部分，藉此使未被表面處 -27- 200807499 (25) 理的下層膜1 0 1之表面露出的方法。 如第5 C圖所不，讓抗触劑1 〇 3軟化的情況下，雖然 已軟化的抗蝕劑103會擴散到下層膜ι〇1的表面，但由於 施行表面處理的流動促進區域1 〇 4，濕潤性被改善，因此 更多的抗蝕劑1 03會行進到流動促進區域i 〇4的這邊，被 - 誘導到標粑區域S i。另一方面，朝向未施行表面處理的禁 止區域S2的抗蝕劑1 〇3的行進，是朝向標靶區域s 1的抗 鈾劑1 〇 3愈多，相反地愈受到其反作用所抑制。第5 c圖 中，中空箭頭是表示抗蝕劑1 03的流動速度及流動體積的 大小。 其結果，如第5D圖所示，抗蝕劑1 〇3會到達標靶區 域s 1，確實地被覆。另一方面，抗蝕劑1 〇 3不會到達禁止 區域S2，可避免被覆。 第6A圖〜第6D圖是有關本發明之回流法的別一實 施形態，簡略表示形成在基板G之表面附近的抗蝕劑1 〇 3 的剖面。如第6 A圖所示，有關形成有下層膜1 〇 1，且在 其上，形成有已形成圖案的抗蝕劑1 〇3的構造及標靶區域 Si、禁止區域S2，是與第5A圖同樣的。在本實施形態 中，抗餽劑1 〇 3，係爲膜厚因部位而異，且在表面具有段 . 差的形狀。亦即，在抗蝕劑1 〇3的表面設有高低差’且 爲具有：膜厚較厚的厚膜部1 03 a ;和相較於該厚膜部 l〇3a相對上膜厚較薄的薄膜部l〇3b之形狀。厚膜部l〇3a 是形成在標靶區域S i之側，且薄膜部1 0 3 b是形成在禁止 區域S 2之側。 -28- 200807499 (26) 其次，如第6 B圖所示，以藉由界面 1 〇 3至標靶區域S !的下層膜1 0 1的流動促 行表面處理，讓已軟化的抗蝕劑1 〇3易於 善其濕潤性。於施行表面處理的流動促進 • 線。 • 施行表面處理之後，如第 6C圖所示 軟化的情況下，雖然已軟化的抗蝕劑1 0 3 1 0 1的表面，但由於施行表面處理的流動 濕潤性被改善，因此更多的抗蝕劑1 0 3會 區域1 04的這邊，被誘導到標靶區域s !。 未施行表面處理的禁止區域S 2的抗鈾劑 朝向標靶區域S i的抗鈾劑1 0 3愈多，相 作用所抑制。 再者，連第6C圖中，中空箭頭亦表: 流動速度及流動體積的大小。 又如前所述，因在抗蝕劑1 0 3存有膜 103a和膜厚較薄的薄膜部l〇3b，故可藉 的抗鈾劑1 03的流動方向。例如，由於厚 釋劑環境的露出面積較大，因此稀釋劑易 快速，且流動性也高。進而，由於厚膜部 比較快速，同時抗鈾劑體積也較大，因I 示，能讓抗触劑1 03確實地到達標靶區域 另一方面，因薄膜部1 〇 3 b，對稀釋劑 積，較厚膜部1 0 3 a小，故軟化難以進行 '活性劑對抗飩劑 [進區域1 〇 4，施 流動的方式來改 區域1 0 4附上波 ，讓抗蝕劑1 0 3 會擴散到下層膜 促進區域1 0 4， 行進到流動促進 另一方面，朝向 103的行進，是 反地愈受到其反 示抗蝕劑103的 厚較厚的厚膜部 此來控制已軟化 膜部1 0 3 a，對稀 浸透，藉此軟化 1 0 3 a軟化進行 比如第6D圖所 Si ° 環境中的露出面 ，流動性比並不 -29- 200807499 (27) 比厚膜部103a大。而且，薄膜部103b由 慢，並且抗蝕劑體積也比厚膜部1 〇 3 a小， 區域S2的抗蝕劑1 03之流動受到抑制，如_ 並不會到達禁止區域S2，且停止變形。 像這樣，除了藉由表面處理來誘導抗蝕 方向以外，藉由使用具有厚膜部l〇3a、薄g 於表面具有高低差的抗蝕劑1 03，就能更確 劑1 03擴散的回流方向及回流面積，還能確 精度。 第7A圖〜第7D圖是有關本發明之回 實施形態，簡略表示形成在基板G之表面 1 〇 3的剖面。 如第7A圖所示，在基板G層積形成有 下層膜102，且在其上形成有已形成圖案的 有關標靶區域S i、禁止區域S2，是與前述同 在本實施形態中，臨近於標靶區域S ! 1 〇3之下端部J，比下層膜1 〇 2的端部更朝 側超出的延伸形狀。對此，與第7A圖相 1 0 2的端部比抗蝕劑1 〇 3之下端部J更超出 之構造（圖未示）的情況下，藉由下層膜 1 〇 1而形成有段差。在已軟化的抗蝕劑1 0 3 如果存在這樣的段差，於是已軟化的抗鈾劑 到越過段差需要一定的時間。又，已軟化的 停止在段差的期間，由於會朝更易流動的方 於軟化的行進 因此朝向禁止 I 6D圖所示， 劑1 0 3的流動 嘆部 l〇3b，且 實地控制抗鈾 丨保足夠的蝕刻 流法的又另一 附近的抗飩劑 下層膜1 〇 1及 抗餓劑103。 樣的。 之側的抗鈾劑 向標靶區域s i 反地，下層膜 標靶區域Si側 1〇2與下層膜 之行進途中， 1 0 3會停滯， 抗蝕劑103， 向流動，因此 -30- (28) (28)200807499 流動方向的制御也較困難。由此種理由來看，在本實施形 態中，抗蝕劑1 〇 3之下端部J，形成比下層膜1 〇 2的端部 更朝向標靶區域s i側突出的延伸形狀。 其次，如第7B圖所示，以藉由界面活性劑對抗蝕劑 103至標靶區域Si的下層膜101的流動促進區域104，施 行表面處理，讓已軟化的抗鈾劑1 03易於流動的方式來改 善其濕潤性。於施行表面處理的流動促進區域1 04附上波 線。 施行表面處理之後，如第7C圖所示，讓抗蝕劑1 03 軟化的情況下，雖然已軟化的抗蝕劑1 會擴散到下層膜 1 〇 1的表面，但由於施行表面處理的流動促進區域1 04， 濕潤性被改善，因此更多的抗蝕劑1 〇3會行進到流動促進 區域1 04的這邊，被誘導到標靶區域S i。又，如前所述， 因抗鈾劑1 03的下端部J，形成比下層膜1 02的端部更超 出標靶區域S!側所形成，但朝向標靶區域Si的抗蝕劑1 03 的流動，並不會因下層膜1 〇2而受到妨礙，越發順利地行 進。因而，如第7D圖所示，抗蝕劑1 〇3會確實地到達標 靶區域Si，被覆該場所。。 另一方面，朝向未施行表面處理的禁止區域S 2的抗 飩劑1 0 3的行進，是朝向標靶區域S i的抗蝕劑1 〇 3愈 多，相反地愈受到其反作用所抑制’如第圖所不’並 不會到達禁止區域S 2，且變形停止。 像這樣，除了藉由表面處理來誘導抗蝕劑1 0 3的流動 方向以外，事先藉由讓抗蝕劑1 03之下端部J，更突出下 -31 - 200807499 (29) 層膜1 02，快速擴散抗蝕劑103，就能縮短回流處理時 間，並且可控制回流方向，還能確保足夠的蝕刻精度。 該表面處理也可在回流處理前先實施。例如，表面處 理可在回流處理之前進行。又，例如在薄膜電晶體元件的 製造過程中，如後所述，可在抗蝕劑之再顯像處理的前後 • 或比該再顯像處理更前面地，以除去藉由蝕刻的抗蝕劑之 表面變質層爲目的所施行的前處理之前後的時間點，來實 施表面處理。 又，在第6A圖〜第6D圖的實施形態中，雖然在表 面設有高低差，且有關具有：膜厚較厚的厚膜部1 0 3 a ;和 相較於該厚膜部l〇3a相對上膜厚較薄的薄膜部l〇3b的抗 蝕劑，在標靶區域S !之側形成厚膜部1 〇 3 a，且在禁止區 域S2之側形成薄膜部1 03b，但與此相反地，也可在標靶 區域Si之側形成薄膜部103b，且在禁止區域s2之側形成 厚膜部1 03 a。可完成相關配置的理由，係抗鈾劑1 03的流 動狀態，是根據在回流處理單元（REFLW ) 60內進行處 理之際的稀釋劑之濃度、流量、基板G (支撐台6 2 )的溫 度、真空室61之內壓等的條件來改變。 例如：如第8A圖〜第8D圖所示，有關稀釋劑濃 度、流量及真空室的內壓，雖然這些增加的同時，抗餓劑 的流動速度也會上昇，但有關溫度，則有抗鈾劑i 03之流 動速度隨溫度上昇而下降的傾向。就是，即使厚膜部 103a、薄膜部l〇3b的形狀和配置相同，例如抗蝕劑的軟 化也會因真空室6 1內的稀釋劑濃度而改變，且流動方向 -32- 200807499 (30) 和流動速度等的舉動不同。因而，組合回流處理中的有機 溶劑濃度、流量、基板溫度、壓力等的條件，來決定、選 擇實驗上最佳的條件，藉此就能使用表面具有高低差（厚 膜部、薄膜部）的抗蝕劑1 03，而任意地來控制其流動方 向和被覆面積。 • 又，雖然圖示省略，但在抗蝕劑改變，設置厚膜部與 薄膜部的實施形態（參照第6A圖〜第6D圖）中，與第 7A圖〜第7D圖所示的實施形態同樣地，也可應用使臨近 於標靶區域S i之側的抗鈾劑1 03之下端部突出的構造（延 伸形狀）。此時，可藉由表面處理、抗蝕形狀（厚膜部及薄 膜部）、以及臨近於標靶S i的抗鈾劑1 0 3之下端部的突出 形狀（延伸形狀），更高精度的來控制抗蝕劑的流動方向、 流動速度及流動面積。 進而，在第6A圖〜第6D圖所示的實施形態中，雖 在抗鈾劑膜設置厚膜部與薄膜部的構成，但抗蝕劑膜厚的 變化並不限於兩階段，亦可爲三階段以上變化。又，抗蝕 劑膜厚，不光是階段狀的變化，也可形成具有緩緩變化膜 ^ 厚之傾斜表面的形狀。此時，例如事先在抗蝕劑的塗佈膜 厚具有傾斜，藉此在曝光後的抗蝕劑表面形成傾斜面。 其次，一邊參照第9圖〜第3 2圖，一邊針對在液晶 顯示裝置用薄膜電晶體元件之製造方法應用本發明之回流 法的實施形態做說明。 第9圖是表示有關本發明之第1實施形態的液晶顯示 裝置用薄膜電晶體元件之製造方法的主要工程的流程圖。 -33- (31) (31)200807499 首先，如第1 〇圖所示，在以玻璃等的透明基板所製 成的絕緣基板201上，形成閘極電極202及圖未示的閘極 線，更按矽氮化膜等的閘極絕緣膜203、a— Si (非晶矽） 膜2 04、作爲電阻接觸層的n+ Si膜205、A1合金和Mo 合金等的電極用金屬膜206的順序來層積而堆積（步驟 S 1 ) ° 其次，如第1 1圖所示，在電極用金屬膜2 0 6上形成 抗飩劑2 0 7 (步驟S 2)。而且，如第1 2圖所示，光線的透 過率因部位而異，將能讓抗蝕劑207的曝光量在不同區域 變化的半遮罩300應用於曝光遮罩，來進行曝光處理（步 驟S3)。該半遮罩3 00是構成可對抗蝕劑207，以三階段 的曝光量而曝光。像這樣藉由將抗蝕劑207加以半曝光， 如第1 3圖所示，形成有：曝光抗鈾劑部208 ;和未曝光抗 蝕劑部209。未曝光抗蝕劑部209，是配合半遮罩3 00的 透過率，階段狀的形成有與曝光抗鈾劑部208的邊界。 曝光後，進行顯像處理，藉此如第14圖所示，除去 曝光抗蝕劑部208，讓未曝光抗鈾劑部209殘存在電極用 金屬膜206上（步驟S4)。未曝光抗蝕劑部209被分離成： 源極電極用抗蝕劑遮罩2 1 0以及汲極電極用抗蝕劑遮罩 2 1 1，且形成圖案。源極電極用抗蝕劑遮罩2 1 0，是藉由半 曝光，並按膜厚較厚的順序，階段狀的形成有：第1膜厚 部2 10a、第2膜厚部210b及第3膜厚部210c。汲極電極 用抗蝕劑遮罩211，也同樣地藉由半曝光，並按膜厚較厚 的順序，階段狀的形成有：第1膜厚部2 1 1 a、第2膜厚部 -34 - 200807499 (32) 2 1 1 b及第3膜厚部2 1 1 c。 而且，以已殘存的未曝光抗蝕劑部209作爲鈾刻遮罩 來使用，用以鈾刻電極用金屬膜206，如第1 5圖所示，於 後面形成通道區域的凹部220 (步驟S5 )。藉由該鈾刻， 形成有源極電極206a和汲極電極206b，且可讓n + Si膜 ' 205的表面露出於該些之間的凹部220內。又，藉由蝕 刻，在源極電極用抗蝕劑遮罩2 1 0及汲極電極用抗鈾劑 211的表面附近，形成有較薄的表面變質層301。 其次，使用去除液來施行濕式處理，且實施除去用來 餽刻電極用金屬膜2 0 6之際的表面變質層3 0 1前處理（步 驟S6 )。前處理後，施行部分除去源極電極206a與汲極 電極206b之上的未曝光抗蝕劑部209的再顯像處理（步 驟S 7 )。該前處理及再顯像處理，可在回流處理系統1 〇 〇 的再現顯處理/除去單元（REDEV/ REMV ) 30持續進 行。如第9圖所示，使用界面活性劑的表面處理，能在步 驟S 6的前處理工程之前，由該前處理工程至步驟7的再 顯像處理工程的期間，或者步驟8的回流處理工程之前的 . 任一時間點來實施。雖然針對設計該表面處理工程的時間 點的做後述，但在本實施形態中，試舉在前處理工程之後 的洗淨處理（洗淨工程），於洗淨液中添加界面活性劑來施 行表面處理的情形爲例，施行以後的說明。 藉由步驟7的再顯像處理，如第1 6圖所示，源極電 極用抗蝕劑遮罩2 1 0及汲極電極用抗蝕劑遮罩2 1 1的被覆 面積會大幅地縮小。具體上，利用源極電極用抗飩劑遮罩 -35- 200807499 (33) 2 10，會完全的除去第3膜厚部210c，且第1膜厚部210a 及第2膜厚部210b會殘存在源極電極206a上。又，汲極 電極用抗鈾劑遮罩2 1 1，也同樣地會完全的除去第3膜厚 部2 1 1 c，且第1膜厚部2 1 1 a及第2膜厚部2 1 1 b會殘存在 汲極電極206b上。 • 像這樣，藉由施行再顯像處理而減少源極電極用抗飩 劑遮罩2 1 0及汲極電極用抗鈾劑遮罩2 1 1的被覆面積，接 著在回流處理（步驟S 8)中，就能防止變形抗蝕劑超出與標 靶區域（凹部220)相反之側的源極電極206a的端部或汲極 電極206b的端部，而被覆下層膜（n+ Si膜205 )。再者， 在第1 6圖中，爲了比較，以虛線來表示再顯像處理前的 源極電極用抗蝕劑遮罩2 1 0及抗蝕劑電極用抗蝕劑遮罩 2 1 1的輪廓。又，於第2 1圖表示對應於該第1 6圖所示的 剖面構造之俯視圖。 又，如先前所述，在本實施形態中，在步驟S 6之前 處理工程後的洗淨工程中，於洗淨液中添加界面活性劑來 施行表面處理。因此，例如雖然在再顯像處理前的第15 圖之狀態中，基板G之露出表面的整個被表面處理，但第 1 6圖所示的再顯像處理後，藉由縮小源極電極用抗蝕劑遮 罩2 1 0及汲極電極用抗餓劑遮罩2 1的被覆面積，而在基 板G之表面形成有已被表面處理的區域和未表面處理的區 域。 亦即，第16圖所示的源極電極20 a及汲極電極206b 的表面中，由於在再顯像處理前，藉由源極電極用抗蝕劑 - 36- 200807499 (34) 遮罩210之第3膜厚部210c所被覆的區域206c及汲極電 極用抗蝕遮罩 2 1 1之第3膜厚部2 1 0 c所被覆的區域 2 0 6d，爲藉由再顯像處理所產生的新露出面，因此，於該 些區域（新的露出面）施行表面處理。因而，在第16圖 中，只有露出於源極電極206a與汲極電極206b之間的凹 • 部220內的標靶區域之n + Si膜20 5的表面、以及露出於 源極電極206a與汲極電極206b之外側的n+Si膜205的 表面被表面處理。 可是，藉由再顯像處理，第1膜厚部210a與第2膜 厚部2 1 Ob (或者第1膜厚部2 1 1 a與第2膜厚部2 1 1 b )的 膜厚，其橫向之合計厚度（寬度）L i，均小於再顯像前的 合計厚度（寬度）L〇 (參照第1 5圖）。而且，臨近凹部 220之側的源極電極用抗蝕劑遮罩210的第1膜厚部210a 之端面和其正下方的源極電極206a之端面，其位置錯移 並面對凹部220而形成有段差D。同樣地，臨近於凹部 220之側的汲極電極用抗蝕劑遮罩2 1 1的第1膜厚部2 1 1 a 之端面和其正下方的汲極電極206b之端面，其位置錯移 並面對凹部220而形成有段差D。 就是，源極電極用抗蝕劑遮罩2 1 0及汲極電極用抗鈾 * 劑遮罩2 1 1，藉由再顯像處理而於橫向被削去的結果，臨 近凹部220之側的源極電極用抗蝕劑遮罩2 1 0之端部與汲 極電極用抗鈾劑遮罩2 1 1之端部的距離，較其下層的源極 電極206a之端部與前記汲極電極206b之端部的距離更 寛。 -37- 200807499 (35) 若形成有此種段差D，在下一回流工程中，不僅藉由 軟化抗蝕劑來被覆標靶區域（此情形爲凹部220 )之際的 軟化抗飩劑之流動方向的控制困難，由於越過段差D之 前，引起流動的停滯，因此導致回流處理時間的增加，且 ' 成爲生產量下降的原因。 • 因此，在本實施形態中，以軟化抗蝕劑易於越過段差 D而流入到標靶區域之凹部220內的方式，在源極電極用 抗蝕劑遮罩2 1 0及汲極電極用抗蝕劑遮罩2 1 1，分別設有 作爲厚膜部的第1膜厚部2 1 0a、2 1 1 a ;和作爲薄膜部的第 2膜厚部2 1 Ob、2 11 b，且實現軟化抗蝕劑之流動方向的控 制和處理時間的縮短化。 又，在回流處理工程（步驟S 8 )中，雖然已軟化的 抗蝕劑，易於在已施行表面處理的標靶區域之凹部220內 的n+Si膜205之露出面流動，但並不會在未施行表面處 理的源極電極2 0 6 a及汲極電極2 0 6 b的區域2 0 6 c，2 0 6 d 促進流動，就能藉由表面處理來誘導軟化抗蝕劑的流動方 向。 其結果，可在回流處理中，於後面，對成爲通道區域 之目的的凹部220，以短時間流入藉由稀釋劑等之有機溶 * 劑而軟化的抗蝕劑，就能確實地被覆凹部220。該回流處 理，是藉由第 4圖的回流處理單元（REFLW ) 60所進 行。 第17圖是表示藉由變形抗蝕劑212而被覆凹部220 之周圍的狀態。於第22圖表示對應於該第1 7圖所示的剖 -38- 200807499 (36) 面構造之俯視圖。在習知技術中，由於變形抗蝕劑 擴散到例如與源極電極2 0 6 a和汲極電極2 0 6 b之凹 相反之側，被覆在例如作爲電阻接觸層的n + S i膜 上，因此被覆部分並未在下一個矽蝕刻工程被蝕刻 所謂蝕刻精度受損而薄膜電晶體元件之不良和良品 的問題。又，如果事先預估較大的面積來設計藉由 蝕劑2 1 2之被覆面積的話，由於製造一個薄膜電 件，所需要的面積（點面積）較大，因此會有所謂 晶體元件的高積體化和對微細化的對應較爲困難的f 對此，在本實施形態中，藉由再顯像處理大幅 源極電極用抗蝕劑遮罩2 1 0及汲極電極用抗飩劑遮 的體積之後，進行回流處理的結果，如第17圖所 由變形抗鈾劑2 1 2的被覆區域，被限定在回流處理 區域的凹部220之周圍，且變形抗蝕劑2 1 2的膜厚 成較薄。因而，也可對應於薄膜電晶體元件的高積 微細化。 其次，如第1 8圖所示，以源極電極2 0 6 a、汲 2 0 6 b及變形抗蝕劑2 1 2作爲蝕刻遮罩來使用，且加 處理n+Si膜205及a— Si膜204(步驟S9)。然 第1 9圖所示，藉由例如濕式處理等的手法，來除 抗蝕劑2 1 2 (步驟S 1 0 )。然後，以源極電極2 0 6 a 電極2 0 6 b作爲蝕刻遮罩來使用，且加以蝕刻處理 凹部220內的n + Si膜205 (步驟SI 1 )。藉此，？ 圖所示，形成有通道區域221。 212會 部220 2 05之 ，招致 率降低 變形抗 晶體元 薄膜電 寄題。 地減少 罩 211 示，藉 之標靶 亦可形 體化、 極電極 以蝕刻 後，如 去變形 及汲極 露出於 !0 第 20 -39- 200807499 (37) 雖然以後的工程省略圖示，但例如：以 2 2 1、源極電線2 0 6 a及汲極電極2 0 6 b的方 成膜之後（步驟S 1 2 )，利用蝕刻所形成藉 接在源極電極206a (汲極電極206b )的 S13 )，接著，藉由銦鍚氧化物ITO )等來 (步驟S 1 4 )，藉此製造液晶顯示裝置用的 件。 在此，一邊參照第23圖〜第25圖、一 面處理的時間點來進行說明。如前所述，雖 只要是在回流工程之前就能以任意的時間點 第9圖所示的順序所施行的液晶顯示裝置用 件之製造工程中，在以下舉例所示的時間點 第2 3圖是表示在前處理工程之後的洗 面處理的形態。首先，在步驟S2 1，在再顯 單元（REDEV/REMV) 30中，於基板G塗 次，雖然在步驟22中，爲了沖洗基板G表 向著基板G吐出去除液，但在該洗淨液中 劑，藉此就能與洗淨液同時施行藉由界面活 理。[Technical Field] The present invention relates to a reflow method of an anti-caries agent which can be utilized, for example, in a pattern forming process for a semiconductor device such as a thin film transistor (TFT) device. A pattern forming method using the method and a method of manufacturing a thin film transistor* device for a liquid crystal display device. [Prior Art] The development of high integration and miniaturization of semiconductor devices in recent years. However, if the high integration and miniaturization progress, the manufacturing process of the semiconductor device becomes complicated, and the manufacturing cost increases. Therefore, in order to substantially reduce the cost of the system, the review of the integration of the mask pattern for lithography has shortened the overall number of works. As a technique for reducing the number of formation processes of the mask pattern, there is provided a method of impregnating an organic solvent with a resist, thereby softening the resist and changing the shape of the anti-uranium agent pattern, whereby the mask pattern can be omitted. A reflow device for engineering is formed (for example, Japanese Patent Document 1). Further, Patent Document 1 describes that the substrate is subjected to an oxygen plasma treatment, a UV treatment, a immersion treatment on a fluorine solution, or a wet treatment to perform uranium engraving of the upper layer film before softening and reflowing the resist. Thereby, the wettability is improved and the reflux is easy. [Patent Document 1] Japanese Patent Laid-Open No. 2 0 Ο 2 - 3 3 4 8 3 0 (paragraph 0094, etc.) [Description of the Invention] -4 - 200807499 (2) [Problems to be Solved by the Invention] However, it is described above. In the method for improving the wettability of Patent Document 1, 'the method of performing the main purpose of modifying the surface to promote reflow, except for the immersion treatment of the fluorine solution, is merely describing the surface of the anti-corrosive mask. The effect of the removal of the metamorphic layer, etc., for other purposes, has an effect. In addition, if the immersion treatment of fluorine is added for the purpose of improving the wettability, the number of projects is increased, which is contrary to the requirement of reducing the number of projects and shortening the processing time. Further, there is also concern that the pattern formation on the surface of the substrate is changed by the etching action of fluorine, and the performance of the device is adversely affected, and a practical method is not mentioned. As such, the method of Patent Document 1 has a problem in rapidly diffusing the softened anti-uranium agent and minimizing the engineering time of the reflow treatment. Further, even if the direction of the resist is softened and spread, and the control of the coverage area is not satisfied, there is a problem in this point. Accordingly, it is an object of the present invention to provide a method for forming a liquid crystal display device by rapidly flowing a softened resist and controlling its flow direction and flow area with high precision in a reflow treatment of an anti-uranium agent. A technique for manufacturing a thin film transistor element. [Means for Solving the Problems] In order to solve the above problems, a first aspect of the present invention provides a reflow method comprising: a lower layer film; and a lower layer film formed to be exposed above the lower layer film The exposed area of the exposed layer and the coated area of the underlying film are formed, and the treated object of the patterned resist film is softened and flows by the anti-contact agent of the anti-uranium film of the former-5-200807499 (3). Here, a reflow method in which a part or all of the exposed region is covered is characterized in that it includes a process for promoting the flow of the softened resist and applying a surface treatment to the exposed region. * In the reflow method of the first aspect described above, the exposed region and the surface region are included.  It is preferable that the entire surface of the object to be treated in the covering region is subjected to surface treatment, and then the resist of the coating region is partially removed. Further, it is preferred that the surface treatment is carried out by a surfactant. Further, the film thickness varies depending on the portion, and has at least a thick film portion having a thick film thickness, and a resist film having a shape of a thin film portion having a relatively thin film thickness as the thick film portion. The aforementioned resist film is preferred. At this time, it is preferable to control the flow direction or the coated area of the softened anti-uranium agent by the arrangement of the thick film portion and the thin film portion. In the reflow method according to the first aspect, the anti-uranium film having a shape protruding toward the upper side of the exposed region from the end portion directly below the uranium-repellent agent is used as the resist film. good. Further, it is preferred that the resist be deformed in an organic solvent environment. Again, .  Patterning of the foregoing resist film can also be carried out by a half exposure process using a half mask and subsequent development processing. Further, a second aspect of the present invention provides a pattern forming method comprising: forming a resist film forming an anti-caries film on an upper layer of an object to be processed; and forming the resist film a masking patterning process of the pattern; and a re-image processing process in which the previously formed resist film is subjected to development processing to reduce the coverage area; and the aforementioned anti--6-200807499 (4) etch a resist of the film of the film is softened and deformed, and a reflow process of covering the target region of the film to be etched; and a first etching process of etching the exposed region of the film to be etched by using the deformed resist as a mask; And an etching process of the uranium-repellent agent after the deformation; and a etching process for etching the target region of the etched film which is exposed by removing the deformed front resist further includes: Prior to the work, the surface of the object to be processed is subjected to a surface treatment in advance so as to promote the softening of the flow of the resist and toward the target region of the film to be etched. In the pattern forming method according to the second aspect described above, it is preferred that the surface treatment be performed by interfacial activity. In this case, the method further includes: removing a pretreatment process of the surface alteration layer of the resist film before the re-image processing; and washing the cleaning process of the object to be processed after the pretreatment process, In the cleaning solution of the cleaning process, the surfactant may be added to perform the surface treatment. Here, in the above-described re-display process after the surface treatment, the resist is partially removed, and the surface of the underlayer film which is not surface-treated is preferably exposed. In addition, after the re-development processing, the cleaning process of the substrate is washed, and the surfactant may be added to the cleaning solution of the cleaning process to perform surface treatment. Alternatively, the surface of the substrate may be subjected to a surface treatment in a liquid chemical environment containing the surfactant before the above-mentioned returning. Further, in the second aspect, the anti-uranium film is a film thickness portion, and has at least a thick film portion having a thick film thickness and a film having a relatively thin film thickness for the thick film. The shape of the portion is controlled by the arrangement of the thick film portion and the film portion in the above-mentioned reflow tool to describe the position of the first agent at the work image and the r· turbulence portion 200807499 (5). The flow direction or the coated area of the softened resist is preferably the same. Further, in the second aspect, a resist film having a shape in which an end portion of the lower layer film directly below the resist protrudes upward from the target region is used as the resist The film is preferred. Further, in the above reflow process, it is preferred that the resist be deformed in an organic solvent environment. Further, it is preferable to perform the above-described mask patterning process by using a half mask half exposure process and subsequent development processing. Further, in the second aspect, the object to be processed is such that a gate line and a gate electrode are formed on the substrate, and a gate insulating film covering the gate electrode is formed, and further formed on the gate insulating film by the lower layer. There are: a-Si film, a S i film for electric resistance contact, and a laminated structure of a metal film for a source and a drain, and the above-mentioned feed film is preferably the Si film for electric resistance contact. A third aspect of the present invention provides a method of manufacturing a thin film transistor for a liquid crystal display device, comprising: forming a gate line and a gate electrode on a substrate; and forming a gate electrode and the gate electrode The gate insulating film is processed; and the a-Si film, the Si film for resistance contact, and the metal film for the source and the drain are sequentially deposited on the gate insulating film; and the source and the source are a process of forming a resist film on a metal film; and performing a half exposure process and a development process on the resist film to form a resist mask for a source electrode and a resist mask for a drain electrode a mask patterning process; and etching the source and drain metal films to form a source by using the resist mask for the source electrode and the resist mask for the drain electrode as a mask a metal film for an electrode and a metal film for a drain electrode, and the lower surface resistive contact S i film is exposed between the metal film for the source electrode and the metal film for the drain electrode, in -8-200807499 (6) The construction of the channel area with a recess; and The formed source electrode is formed by a resist mask and the anti-contact agent mask for the drain electrode, and the re-development process is performed to reduce the amount of each coating surface*, and the organic solvent acts on the substrate. The reduced source electrode electrode mask and the drain electrode are masked with an anti-caries agent to deform the softened soft resist, thereby covering the source electrode metal film and the bungee a reflow process of the Si film for resistive contact in the recess portion of the channel region between the metal films for the electrodes; and the resist, the metal film for the source electrode, and the metal film for the gate electrode as the mask a cover for etching the Si film for electric resistance contact and the a-S i film of the lower layer; and removing the deformed anti-uranium agent, and exposing the Si film for electric resistance contact to the metal film for source electrode again The inside of the recessed portion for the passage region between the metal film for the surface of the drain electrode; and the metal film for the source electrode and the metal film for the drain electrode are used as a mask to etch the front portion between the portions In the above-described reflow process, the flow of the softened anti-uranium agent is promoted toward the surface of the channel region recess for the resistive contact Si film before the reflow process. In the case of the aforementioned substrate, the surface treatment was first applied. In the above third aspect, it is preferred that the surface treatment is carried out by a surfactant. In this case, the pretreatment process for removing the surface deterioration layer of the anti-uranium film before the re-development process; and after the pretreatment process, the cleaning process of the substrate is washed. The above-mentioned cleaning - 9-200807499 (7) The above-mentioned surfactant is added to the cleaning liquid of the project to perform surface treatment. Here, in the re-development process after the surface treatment, the resist film is partially removed, and the surface of the surface electrode is not exposed, and the metal film for the source electrode and the metal film for the gate electrode are exposed. Also. Further, after the re-development processing, the cleaning process of the front substrate is washed, and the surfactant may be added to the cleaning liquid of the cleaning process to perform surface treatment. Alternatively, the front substrate may be subjected to a surface treatment in a chemical liquid environment containing the surfactant before the above-mentioned returning. Further, in the third aspect, the resist film is a film thickness portion, and has at least a thick film portion having a thick film thickness and a film having a relatively thin film thickness for the thick film. In the shape of the portion, it is preferable to control the flow direction or the coating area of the resist by the arrangement of the thick film portion and the thin film portion in the reflow process. In this case, in the above-mentioned returning process, the thick portion may be provided on the side of the recess portion for the passage region between the metal film for the source electrode and the metal film for the drain electrode. Alternatively, in the reflow process, the thin film portion may be provided on the side of the recess portion for the passage region between the source metal film for the source electrode and the metal film for the gate electrode. Further, in the above-described third aspect, in the reflow process, the end portion of the resist film protrudes more from the end portion of the metal film for the source electrode and the end portion of the metal film for the gate electrode. It is preferable that the channel region is a resist film having a concave protruding shape. Further, in the reflow process, the uranium-preventing agent is disposed in the organic solvent in the enthalpy flow.  -10- 200807499 (8) Deformation in the environment is better: Further, it is preferable to perform the above-described mask patterning process by using a half mask half exposure process and subsequent development processing. According to a fourth aspect of the present invention, a control program is provided for controlling a reflow processing device by operating a computer and performing a flow back method of the first viewpoint in a processing chamber during execution. A fifth aspect of the present invention provides a computer readable memory medium, which is a computer readable memory medium that memorizes a control program that operates on a computer. The control program is executed in a processing room. The reflow processing apparatus is controlled in such a manner that the reflow method of the first aspect described above is carried out. According to a sixth aspect of the invention, there is provided a reflow processing apparatus comprising: a processing chamber provided with a support table on which a target object is placed; and a gas supply means for supplying an organic solvent to the processing chamber; and A control unit that performs the reflow method of the first aspect described above in the processing chamber. [Effect of the Invention] According to the present invention, it is possible to perform a surface treatment in advance to promote the flow of the softened resist before the reflow treatment, thereby diffusing the region for the purpose of rapidly flowing the resist. , the reflow process is ended in a short time. Further, by adjusting the time point at which the surface treatment is performed, the flow direction and flow area (diffusion direction) of the softened resist can also be controlled. Further, the reflow method of the present invention is applied to the manufacture of a semiconductor device such as a thin film transistor device in which a resist is used as a mask for etching, thereby not only saving masking and reducing the number of engineering, but also Can be processed -11 - 200807499 (9) Time reduction. Further, since the uranium engraving precision is improved, it is also possible to cope with the high integration and miniaturization of the semiconductor device. [Embodiment] [The best mode for carrying out the invention] Hereinafter, the best mode of the present invention will be described with reference to the drawings. Fig. 1 is a schematic plan view showing the entire reflow processing system which can be suitably used in the reflow method of the present invention. Here, the uranium-repellent film which is formed on the surface of the glass substrate for LCD (hereinafter referred to as "substrate") G is softened and deformed after the development process, and is reflowed by reflow treatment. a processing unit; and a reflow processing system for re-development processing and a re-development processing/removal unit (REDEV/REMV) performed before the reflow processing. The reflow processing system 1 includes: a cassette station (loading/receiving unit) 1 for accommodating a plurality of substrates G; and a processing station for performing a series of processing units including a reflow process and a re-development process on the substrate G (Processing unit) 2; and a control unit 3 for controlling each component of the reflow processing system 100. Further, in Fig. 1, the longitudinal direction of the reflow processing system 100 is the X direction, and the direction orthogonal to the X direction on the plane is the Y direction. The cassette station 1 is disposed adjacent to one end of the processing station 2. The cassette station 1 is provided between the cassette C and the processing station 2, and is provided with a transporting device η for carrying in and out of the substrate G. The cassette station 1 carries out the loading and unloading of the cassette C to the outside. Further, the transport apparatus 1 1 has a transport arm 11a that can be moved on the transport path 10 provided in the Y direction along the arrangement direction of the -12-200807499 (10) card C. The transfer arm 11a is provided so as to be able to move in and out in the X direction, and to be vertically moved up and down and rotated, and to deliver the substrate G between the cassette C and the processing station 2. The processing station 2 is provided with a plurality of processing units for performing a series of processes for performing reflow processing of the resist on the substrate G and performing the pre-processing and the re-development processing. The processing substrates G are processed in one piece at the processing stations. Further, the processing station 2 has a central transport path 20 for transporting the substrate G extending substantially in the X direction, and is adjacent to the central transport path 20 on both sides thereof via the central transport path 20 Each processing unit is configured. Further, the center transport path 20 is provided with a transport device 21 for carrying in and out of the substrate G, and a transport arm 2 1 a movable in the X direction of the arrangement direction of the processing unit. Further, the transfer arm 21a is provided to be movable in and out of the Y direction, and is movable up and down so as to be movable up and down, and is configured to carry out the loading and unloading of the substrate G between the respective processing units. Along the central transport path 20 of the processing station 2, on one side thereof, a re-development processing/removal unit (REDEV/REMV) 30 and a reflow processing unit (RE FLW) 6 are sequentially arranged from the side of the cassette station 1. 0, and 'three heating/cooling processing units (HP/COL) 80a, 80b, 80c are arranged in a row along the central transport path 20 on the other side. Each of the heating/cooling processing units (HP/COL) 80a, 80b, and 80c is stacked in a plurality of stages in the vertical direction (not shown). Re-image processing/removal processing unit (REDEV/REMV) 30, -13- 200807499 (11) is used to remove metal etching or the like performed in other processing systems not shown before the reflow process. A pretreatment of the altered layer and a processing unit that re-develops the pattern of the resist. Further, as will be described later, in the re-development processing/removal unit (REDEV/REMV) 30, the chemical solution containing the surfactant is discharged onto the substrate G, and it can be used.  A surface treatment that promotes the flow of the resist. The re-image processing/removal unit (REDEV/REMV) 30 is provided with a rotary liquid processing mechanism, and rotates at a constant speed while holding the substrate G, and discharges the nozzle from the re-developing liquid for re-development processing. Further, the removal liquid discharge nozzle for the pretreatment is configured such that various treatment liquids are discharged to the substrate G, and application or pretreatment of the re-developing chemical liquid (removal treatment of the resist surface deterioration layer) is performed. Here, the re-development processing/removal unit (REDEV / REMV) 30 will be described with reference to FIGS. 2 and 3 . Fig. 2 is a plan view of the re-development processing/removal unit (REDEV/REMV) 30, and Fig. 3 is a cross-sectional view of the cup-shaped portion in the re-development processing/removal unit (REDEV/REMV) 30. As shown in Fig. 2, the re-development processing/removal unit (REDEV / REMV) 30 is entirely surrounded by the washing tub 31. Further, as shown in FIG. 3, in the development processing/removing unit (REDEV/'REMV) 30, a holding means for rotatably providing the mechanical holding substrate G by a rotation driving mechanism 33 such as a motor, for example The rotary chuck 3 2 is provided with a cover plate 34 for surrounding the rotary drive mechanism 33 on the lower side of the rotary chuck 32. The rotary chuck 3 2 can be raised by a lifting mechanism (not shown), and in the ascending position, the substrate G is transferred between the transfer arm 2 1 a and the delivery of the substrate G -14-200807499 (12). The rotary chuck 3 2 is formed to adsorb and hold the substrate G by vacuum attraction or the like. On the outer periphery of the cover plate 34, two outer cups 3 5, 3 6 are provided separately, and above the two outer cups 3 5 and 3 6 , the main re-imageing drug is provided in a freely movable manner. The inner cup 3 7 which flows down the liquid is on the outer side of the outer cup 36, and the outer cup 38 which is mainly for allowing the washing liquid to flow downward is provided in the same manner as the inner cup 37. In addition, in the third figure, the position on the left side of the paper surface indicating the discharge of the re-image liquid chemical, the position where the inner cup 37 and the outer cup 38 are raised is shown on the right side, indicating the discharge of the cleaning liquid. When making some of these lowered positions. At the bottom side of the inner side of the outer cup 35, an exhaust port 39 for exhausting in the unit during spin drying is disposed, and between the two outer cups 35, 36, is mainly provided for discharging The liquid discharge pipe 40 a of the developing liquid is mainly provided with a drain pipe 40b for discharging the washing liquid at the outer peripheral side of the outer cup 36. On one side of the outer cup 38, as shown in Fig. 2, a nozzle holding arm 4 for re-developing the chemical liquid and the removal liquid is provided, and the nozzle holding arm 4 1' is housed in the nozzle holding arm 4 1 'for the substrate G The re-developing chemical liquid discharge nozzle 42a and the removal liquid discharge nozzle 42b for applying the re-image developing liquid are applied. The nozzle holding arm 41 is configured to move along the longitudinal direction of the guide rail 4 by a drive mechanism 44 such as a belt belt, and is moved across the substrate g. At the time of application or discharge of the removal liquid, the nozzle holding arm 4 1 scans the re-developing chemical liquid from the re-developing chemical liquid discharge nozzle 4 2 a or discharges the removal liquid from the removal liquid discharge nozzle 42 b. The substrate G that has been stationary is formed. -15-200807499 (13) Further, the re-image developing liquid discharge nozzle 42a and the removal liquid discharge nozzle 42b are formed so as to stand by in the nozzle standby unit 45, and are provided for washing in the nozzle standby unit 45. The nozzle refilling nozzle 42a and the nozzle cleaning mechanism 46 for removing the liquid discharge nozzle 42b are removed. On the other side of the outer cup 38, a nozzle holding arm 47 for discharging the cleaning liquid such as pure water is provided, and a cleaning liquid discharge nozzle 48 is provided at the tip end portion of the nozzle holding arm 47. As the cleaning liquid discharge nozzle 4, for example, a nozzle having a tubular discharge port can be used. The nozzle holding arm 47 is slidably provided along the longitudinal direction of the guide rail 43 by the drive mechanism 49, and is scanned on the substrate G while discharging the cleaning liquid from the cleaning liquid discharge nozzle 48. Further, a surfactant for performing surface treatment on the substrate G may be added to the cleaning liquid discharged from the cleaning liquid discharge nozzle 48. As the surfactant to be subjected to the surface treatment, for example, a fluorine surfactant or the like can be used. Further, although the chemical liquid discharge nozzle (not shown) including the surfactant for surface treatment may be provided separately from the cleaning liquid discharge nozzle 4, the cleaning liquid is discharged from the viewpoint of simplification of the apparatus. The nozzle 48 can preferably be used for a general washing treatment and a washing treatment for simultaneously performing a surface treatment. Next, the description of the above-described re-development processing/removal unit (REDEV/REMV) 30 and the re-development processing will be described. First, the inner cup 37 and the outer cup 38 are positioned at the lower position (the position shown on the right side of Fig. 3), and the transfer arm 2 1 a holding the substrate G is inserted into the re-development processing/removal unit (REDEV/). In the REMV) 30, with this time point, the rotary chuck 3 2 is raised, and the substrate G is delivered toward the rotary chuck 32. After the transfer arm 21a is moved back to the re-development processing/removal unit (rEDEv - 16 - 200807499 (14) / REMV) 30, the rotary chuck 32 on which the substrate G is placed is lowered and held at a predetermined position. Further, the nozzle holding arm 4 1 is moved and placed at a predetermined position in the inner cup 37, so that the elevating mechanism 50b is stretched and only the liquid ejecting nozzle 4 2 b is placed below and held while scanning on the substrate G. The alkaline removal liquid is discharged onto the substrate G by using the removal liquid discharge nozzle 42b. Here, as the removal liquid, for example, a strong alkali aqueous solution can be used. During a period before a certain reaction time elapses, the elevating mechanism 50b is contracted, and the removal liquid discharge nozzle 42b is returned to the upper position for holding, and the nozzle holding arm 41 is withdrawn from the inner cup 37 and the outer cup 38. In other words, the nozzle holding arm 47 is driven to move the cleaning liquid discharge nozzle 48 to a certain position on the substrate G. Next, the inner cup 37 and the outer cup 38 are raised and held at the upper position (the left side of Fig. 3). In addition, the substrate G is rotated at a low speed, and the cleaning liquid is discharged from the cleaning liquid discharge nozzle 48 substantially simultaneously with the operation of removing the liquid that has entered the split substrate g, and the borrowing liquid is started at substantially the same time as these operations. Exhaust action by the exhaust port 39. When the substrate G starts to rotate, the removal liquid and the cleaning liquid scattered from the substrate G toward the outer periphery thereof are in contact with the tapered portion of the inner cup 37 or the outer wall (the vertical wall of the side surface) and are introduced downward, and The drain pipe 40a is discharged. A surfactant for surface-treating the substrate G may be added to the cleaning liquid used for the cleaning treatment after the removal of the removal liquid. When a surfactant is added to the cleaning liquid, the cleaning liquid used for the cleaning treatment after the application of the re-developing chemical liquid can be switched to ordinary water, for example. After the lapse of a certain period of time from the start of the rotation of the substrate G, the -17-200807499 (15) cleaning liquid is discharged while the substrate G is rotated, and the inner cup 37 and the outer cup 38 are lowered and held. The next position. In the lower position, the horizontal position of the surface of the substrate G substantially corresponds to the height of the tapered portion of the outer cup 38. Further, in order to reduce the residual liquid of the removal liquid, the number of revolutions of the substrate G is adjusted to be larger than when the rotation operation of the removal liquid is started. The operation of increasing the number of revolutions of the substrate G may be performed at the same time as the lowering operation of the inner cup 37 and the outer cup 38 or at the same time. As a result, the treatment liquid mainly composed of the cleaning liquid scattered from the substrate G hits the tapered portion or the outer peripheral wall of the outer cup 38 and is discharged from the liquid discharge tube 40b. Then, the discharge of the cleaning liquid is stopped, and the washing liquid discharge nozzle 48 is stored at a predetermined position, and the number of revolutions of the substrate G is further increased for a predetermined period of time. That is, the spin drying of the substrate G is performed by high-speed rotation. Next, the nozzle holding arm 41 is moved and placed at a certain position in the inner cup 37, so that the elevating mechanism 50a is stretched and only the re-developing chemical liquid discharge nozzle 42a is held below, and is scanned on the substrate G. A re-developing chemical solution is applied to the substrate G by the re-developing chemical liquid discharge nozzle 42a to form a re-developing chemical liquid melting portion. Forming a molten portion of the re-image liquid.  Thereafter, the re-developing chemical liquid discharge nozzle * 42a is returned to the upper position by the elevating mechanism 5 Ob while the predetermined re-development processing time (re-development reaction time) elapses, and the nozzle is held. The holding arm 4 1 is withdrawn from the inner cup 37 and the outer cup 3, and is replaced with a driving nozzle holding arm 47, and the washing liquid discharge nozzle 48 is held at a certain position on the substrate G. Next, the inner cup 37 and the outer cup 38 are raised and held at the upper position (the left side of Fig. 3). -18-200807499 (16) Further, the substrate G is rotated at a low speed, and the cleaning liquid is discharged from the cleaning liquid discharge nozzle 48 substantially simultaneously with the operation of removing the liquid that has entered the split substrate G, and further At the same time, the exhausting operation by the exhaust gas D 3 9 is started substantially simultaneously. That is, 'before the re-imaging reaction time', the state that the exhaust port 39 is inactive is good, and thus the re-imageing liquid melted portion formed on the substrate G is not generated. The adverse effects of airflow caused by the action of the port 39. Further, a surfactant for performing surface treatment on the substrate G may be added to the cleaning liquid after the re-imaging treatment. When the substrate G starts to rotate, the re-image developing liquid and the cleaning liquid scattered from the substrate G toward the outer periphery thereof are in contact with the tapered portion or the outer peripheral wall (vertical wall of the side surface) of the inner cup 37, and are introduced downward. And it is discharged from the drain pipe 40a. After the elapse of a certain period of time from the start of the rotation of the substrate G, the inner cup 37 and the outer cup 38 are lowered and held in the lower position while the substrate G is being rotated while the substrate G is being rotated. In the lower position, the horizontal position of the surface of the substrate G substantially conforms to the height of the tapered portion of the outer cup 38. Further, in order to reduce the residual liquid of the removal liquid, the number of revolutions of the substrate G is adjusted to be larger than when the rotation operation of the re-image developing liquid is started. The operation of increasing the number of revolutions of the substrate G may be performed at the same stage as when the lowering operation of the inner cup 37 and the outer cup 38 is the same as or before. As a result, the treatment liquid mainly composed of the cleaning liquid scattered from the substrate G hits the tapered portion or the outer peripheral wall of the outer cup 38 and is discharged from the liquid discharge tube 40b. Then, the discharge of the cleaning liquid is stopped, and the washing liquid discharge nozzle 48 is stored at a predetermined position, and the number of revolutions of the substrate G is further increased for a predetermined period of time. That is, the spin drying of the substrate G is performed by the rotation of the high speed -19-200807499 (17). As described above, the series of processing of the re-development processing/removal unit (REDEV/REM V) 30 is ended. Further, in the reverse order of the above, the processed substrate G is carried out from the re-development processing/removal unit (REDEV / REMV) 30 by the transfer arm 21a. On the other hand, in the reflow processing unit REFLW 60 of the processing station 2, the resist formed on the substrate G is softened in an organic solvent such as a diluent and reflowed by recoating. Further, as will be described later, in the reflow processing unit (REFLW) 60, surface treatment for promoting the flow of the resist can be performed by exposing the substrate G to a chemical liquid environment containing a surfactant. Here, the configuration of the reflow processing unit (REFLW) 60 will be described in more detail. Figure 4 is a schematic cross-sectional view of the reflow processing unit (REFLW) 60. The reflow processing unit (REFLW) 60 has a vacuum chamber 61. The vacuum chamber 61 has a lower vacuum chamber 61a and an upper vacuum chamber 61b that abuts on the upper portion of the lower vacuum chamber 61a. The upper vacuum chamber 61b and the lower vacuum chamber 61a can be opened and closed by an opening and closing mechanism (not shown), and in the open state, the substrate G can be carried in and out by the conveying device 21. A support table 62 that horizontally supports the substrate G is provided in the vacuum chamber 61. The support table 62 is made of a material having excellent thermal conductivity such as aluminum. The support table 62 is driven by a lifting mechanism of the drawing, and three lifting pins 63 for raising and lowering the substrate G are provided so as to penetrate the supporting table 62 (in the fourth drawing, only two are shown). The lift pin 63 lifts the substrate G from the support table 42 while lifting the substrate G between the lift -20-200807499 (18) pin 63 and the transfer device 21, and supports the substrate G at a certain height position. In the reflow process, for example, the front end is held at the same height as the upper surface of the support table 62. Exhaust ports 64a, 64b are formed at the bottom of the lower vacuum chamber 61a, and an exhaust system 64 is connected to the exhaust ports 64a, 64b. Further, the ambient gas in the vacuum chamber 61 is exhausted through the exhaust system 64. A temperature adjustment medium flow path 65 is provided inside the support table 62, and the temperature adjustment medium flow path 65 is introduced into the temperature adjustment medium such as temperature cooling water through the temperature adjustment medium introduction pipe 65a. The temperature-adjusting medium discharge pipe 65b is discharged and circulated, and the heat (for example, heat and cold) transfers heat to the substrate G via the support table 62, whereby the processing surface of the substrate G is controlled at a desired temperature. In the top wall portion of the vacuum chamber 61, a shower head 66 is provided in a manner opposed to the support table 62. A plurality of gas discharge holes 66b are provided in the lower surface 6 6 a of the shower head 66. Further, a gas introduction portion 67 is provided at the center of the upper portion of the shower head 66, and the gas introduction portion 67 is connected to a space 68 formed inside the shower head 66. The gas supply pipe 69 is connected to the gas introduction portion 67, and the gas supply pipe 69 is branched into a pipe 69a and a pipe 69b. The piping 69a is connected to a foaming tank 70 which is supplied by vaporizing an organic solvent such as a diluent, and an on-off valve 71 is provided in the middle thereof. At the bottom of the bubble generating tank 70, a bubble generating means for vaporizing the diluent is provided, and is connected to a N2-21-200807499 (19) gas supply pipe 7.4 of an N2 gas supply source (not shown). The N 2 gas supply pipe 7 4 is provided with a mass flow controller 72a and an opening and closing valve 73a. Further, the bubble generating tank 70 is provided with a temperature adjusting mechanism for adjusting the temperature of the diluent stored therein to a constant temperature. Further, the N2 gas is introduced into the bottom of the bubbler tank 70 by controlling the flow rate from the N2 gas supply source (not shown) by the mass flow controller 72, thereby allowing the temperature to be adjusted to a certain temperature. The diluent in the tank 70 is vaporized, and is configured to be introduced into the vacuum chamber 61 through the piping 619a and the gas supply piping 619. Further, the other side pipe 69b is connected to the surface treatment liquid supply source 7 8 and is provided with a mass flow controller 7 2 b and its front and rear opening and closing valves 7 1 and 73b. The surface treatment liquid supply source 78 includes, for example, a vaporizer or a mist generating device, not shown, and forms a gas or mist in a chemical solution containing a surfactant, and performs flow rate by the mass flow controller 72b. The control is configured to be introduced into the vacuum chamber 61 through the gas supply pipe 69. Further, a plurality of flushing gas introduction portions 75 are provided in the peripheral portion of the upper portion of the shower head 66, and a flushing gas introduction portion 75 is connected to, for example, a flushing gas supplied to the vacuum chamber 61 in the vacuum chamber 61. Gas supply pipe 76. The flushing gas supply pipe 76 is connected to a flushing gas supply source (not shown), and an on-off valve 7 is provided in the middle. In the reflow processing unit (REFLW) 60 having such a configuration, the upper vacuum chamber 6 1 b is first opened from the lower vacuum chamber 61 1 a, and in this state, by the transfer: the transfer arm 2 1 a of the device 2 1 The substrate G having the patterned anti-caries agent is loaded and placed on the support table 62 of -22-200807499 (20). Further, the upper vacuum chamber 61b is vacuum-connected to the lower portion to close the vacuum chamber 61. Here, in the processing unit (REFLW) 60 before the reflow processing, the on-off valves 71 and 73 of the pipe 69b are subjected to the surface treatment, and the flow rate is controlled by the mass flow control while the agent is supplied from the surface treatment liquid supply source 78. The gas or mist-like chemical liquid is introduced into the space 68 of the shower head 66 via the gas supply pipe 690 and the portion 67, and is discharged from the gas 66b. Thereby, a certain liquid atmosphere is formed in the vacuum chamber 61, and the surface of the support table 6 2 placed in the vacuum chamber 61 is surface-treated. Next, the opening and closing valves 71 and 73b of the pipe 69b are closed, the opening and closing valve 71 of the pipe 69a, and the N2 gas supply pipe 74 7 3, and the gasification of the n 2 gas control diluent is regulated by the mass flow controller 7 2 a. The amount of the refrigerant is introduced into the space 68 of the shower head 66 through the pipe 69a, the gas supply pipe 69, and the gas introduction portion from the bubble generating tank 70, and is discharged from the gas discharge hole. Thereby, a certain concentration is formed in the vacuum chamber 6 1 .  territory. Since the patterned resist is provided on the support table 62 which has been placed in the vacuum chamber 61, the uranium-repellent agent is released into the environment, whereby the diluent is allowed to permeate into the resist. Thereby, it softens, the fluidity thereof is improved, deformation occurs, and the surface region (target region) of the substrate G is covered with a deformed resist. At this time, the medium is introduced into the temperature chamber 6 1 a provided inside the support table 6 2 , and under the reflow, the opener 72 b is opened and closed by the drug substrate G which is at the interface of the active gas introduction body discharge hole concentration. The flow rate is diluted by 67, while the guide 6 6 b is exposed to the thinner ring of the substrate G exposed to a thin, anti-caries agent surface to adjust the temperature of the medium -23- 200807499 (21) flow path 65, thereby its heat The substrate G is transferred via the support table 62, whereby the processing surface of the substrate G is controlled at a desired temperature, for example, 20 °C. The gas containing the diluent discharged from the shower head 66 toward the surface of the substrate G contacts the surface of the substrate G, flows to the exhaust ports 64a, 64b, and is exhausted from the inside of the vacuum chamber 61 toward the exhaust system 64. .  After the reflow process in the reflow processing unit (REFLW) 60 is completed as described above, the on-off valve 7 7 on the flushing gas supply pipe 76 is blown while the exhaust gas is continuously exhausted, and the vacuum chamber 6 is passed through the flushing gas introduction portion 75. The N 2 gas as a flushing gas is introduced into the interior of the vacuum chamber. Then, the upper vacuum chamber 6 1 b is opened from the lower vacuum chamber 61 1 a, and the substrate G after the reflow processing is carried out from the reflow processing unit (REFLW) 60 by the transfer arm 21a in the reverse order to the above. The three heating/cooling processing units (HP/COL) 80a, 80b, and 8〇c are stacked in a plurality of stages to form a heating plate unit (HP) that heats the substrate G, and a cooling process for cooling the substrate G. Board unit (COL) (not shown). The heating/cooling treatment unit (HP/COL) 80a, 80b, and 80c is used to perform heat treatment or cooling treatment on the substrate G after the re-development processing and the reflow treatment after the pre-treatment. As shown in Fig. 1, each component of the reflow processing system 100 is controlled by a process controller 90 connected to a CPU including the control unit 3. The process controller 90 is connected to a display that is displayed by the engineering manager in order to manage the reflow processing system 100, inputting a command input operation, and visualizing the operation state of the reflow processing system 100. 200807499 (22) The user interface 9 1 is constructed. Further, the process controller 90 is connected to a memory unit 92 in which a program for realizing various processes and processing condition data executed by the reflow processing system 1 by the process controller 90 is stored. Further, if necessary, an arbitrary program is called from the memory unit 92 by an instruction or the like from the user interface 91, and is executed by the process controller 90 under the control of the process controller 90 in the reflow processing system 1. 〇〇 Execute the required processing. Further, the program may be, for example, a state in which a computer-readable memory medium is stored in a CD-ROM, a hard disk, a floppy disk, a flash memory, or the like, or may be used from another device, for example, via a dedicated wire. Transfer utilization. In the reflow processing system 100 configured as described above, in the cassette station 1, the transfer arm 11a of the transfer device 11 is moved in and out of the cassette C for accommodating the unprocessed substrate G to take out one of the substrates G. The substrate G is a transfer arm 21a that is delivered from the transfer arm 1 1 a of the transfer device 1 1 to the transfer device 21 in the central transfer path 20 of the processing station 2, and the transfer device 21 performs the re-development processing/ The removal unit (REDEV/REMV) 30 is carried in. Further, after the re-development processing/removal unit (REDEV/REMV) 30 performs pre-processing and re-development processing, and further performs surface treatment as needed, the substrate G is subjected to re-development processing/removal unit (REDEV/REMV). 30 is taken out by the conveying device 21, and carried into any unit of the heating/cooling processing units (HP/COL) 80a, 80b, 80c. Further, in each of the heating/cooling processing units (HP/COL) 80a, 80b, and 80c, the substrate G subjected to a certain heating and cooling treatment is carried into the reflow processing unit -25-200807499 (23) (REFLW) 60. Here, the reflow treatment is carried out. . Further, in the case where the surface treatment is not performed by the re-development processing/removal unit (REDEV/REMV) 30, the surface treatment by the chemical environment can be performed in the reflow processing unit (REFLW) 60. After the reflow treatment, a heating and cooling treatment is performed in each of the heating/cooling treatment units (HP/COL) 80a, 80b, and 80c as needed. The substrate G that has been subjected to such a series of processes is delivered to the transport device 1 1 of the cassette station 1 by the transport device 21, and is accommodated in an arbitrary cassette C. Next, the principle of the reflow method performed in the reflow processing unit (REFLW) 60 will be described. 5A to 5D, 6A to 6D, and 7A to 7D are views for explaining the reflow method of the present invention, respectively. Figs. 5A to 5D are views showing a reflow method according to an embodiment of the present invention, and schematically show a cross section of a resist 103 formed in the vicinity of the surface of the substrate G. An underlayer film 110 is formed on the substrate G, and a patterned anti-uranium agent 103 is formed thereon. In the example of FIG. 5A, the target region S i is present on the surface of the underlying film 1 〇1, and the softened anti-caries agent 1 〇3 is flowed into the target region S1, and the anti-caries agent 1 0 3 is utilized. To cover the target area S i for its purpose. On the other hand, on the lower film 1 〇 1 on the side opposite to the target region s i , the resist region 1 is interposed between the resist film 1 〇 3 and the target region s i . In the prohibited area S2, it is necessary to avoid the coating caused by the anti-caries agent 1〇3. It is assumed that from the state of Fig. 5A, in the case where, for example, an organic solvent such as a diluent is contacted and impregnated into the resist, the softened anti-uranium agent 1 〇 3 should be at the same speed. It travels in the direction of both the target area Si and the prohibited area S2. Therefore, if the distance from the resist 10 3 to the target region S i is equal to the distance from the resist 1 0 3 to the prohibited region S 2 , both the target region S i and the prohibited region S 2 , a pair of The etching agent 103 is coated, or both. • In the state where the coating is insufficient, the flow of the resist 1 0 3 should be stopped. In this manner, if the coating of the target region S i is not actually performed, or if the resist 103 reaches the prohibited region S2 where the resist is not coated, for example, etching using the resist 103 as a mask after reflow is used. The accuracy of the shape is lowered, and the device defects such as the thin film transistor element and the yield are lowered. This disadvantage of the reflow treatment is that the reflow direction of the resist 103 which is softened by the organic solvent cannot be controlled. Therefore, in the present embodiment, as shown in Fig. 5B, the surface treatment is performed by the flow-promoting region 1 0 4 of the lower film 1 0 1 of the resist 103 to the target region S i by the surfactant. The softened anti-caries agent 1 0 3 is easy to flow to improve its wettability. Further, the flow-promoting region 104 to which the surface treatment is applied is attached with a wave line. Here, although the type of the film 10 1 under the flow promoting region 104 is formed by surface treatment, for example, a metal film made of a material such as aluminum alloy, titanium or magnesium is used. As a method of selectively forming the flow promotion region 104 on the surface of the substrate G as in the case of *, a specific example will be described in detail later. For example, the anti-caries agent 1 may be subjected to exposure treatment or the like in advance. After the film thickness of 0 3 has a step, the surface of the substrate G is completely subjected to surface treatment, and re-image processing and ashing treatment are performed to remove the film portion of the uranium-resistant agent 1, thereby leaving the surface at -27-200807499 (25 The method of exposing the surface of the underlayer film 110. As shown in Fig. 5C, in the case where the anti-touching agent 1 〇 3 is softened, although the softened resist 103 is diffused to the surface of the underlying film 〇1, the surface-promoting flow promoting region 1 〇 4. The wettability is improved, so more resist 103 will travel to the side of the flow promoting region i 〇 4 and be induced to the target region S i . On the other hand, the progress of the resist 1 〇 3 toward the prohibited region S2 where the surface treatment is not performed is the more the uranium-resistant agent 1 〇 3 toward the target region s 1 , and conversely, the more the reaction is suppressed. In Fig. 5c, the hollow arrow indicates the flow velocity of the resist 103 and the size of the flow volume. As a result, as shown in Fig. 5D, the resist 1 〇 3 reaches the target region s 1, and is surely covered. On the other hand, the resist 1 〇 3 does not reach the prohibited area S2, and the coating can be avoided. Figs. 6A to 6D are views showing another embodiment of the reflow method of the present invention, and schematically show a cross section of the resist 1 〇 3 formed in the vicinity of the surface of the substrate G. As shown in FIG. 6A, the structure in which the underlayer film 1 〇1 is formed and on which the patterned resist 1 〇3 is formed, the target region Si, and the forbidden region S2 are formed. The figure is the same. In the present embodiment, the anti-feeding agent 1 〇 3 has a film thickness which varies depending on the portion and has a segment on the surface.  Poor shape. That is, the surface of the resist 1 〇 3 is provided with a height difference ′ and has a thick film portion 1300 a thick; and a relatively thin film thickness relative to the thick film portion 〇 3 a The shape of the film portion l〇3b. The thick film portion 10a is formed on the side of the target region S i , and the thin film portion 1 0 3 b is formed on the side of the prohibited region S 2 . -28- 200807499 (26) Next, as shown in Fig. 6B, the softened resist is promoted by the surface treatment by the flow of the lower layer film 101 of the interface 1 〇3 to the target area S! 1 〇 3 is easy to be wet. Flow promotion for the surface treatment • Line. • After the surface treatment, as shown in Fig. 6C, although the surface of the softened resist 1 0 3 1 0 1 is softened, the flow wettability due to the surface treatment is improved, so more resistance The etchant 1 0 3 will be on the side of the region 1 04 and is induced to the target region s ! The anti-uranium agent of the prohibited region S 2 which is not subjected to the surface treatment has more anti-uranium agent 1 0 3 toward the target region S i , and the phase action is suppressed. Furthermore, even in Figure 6C, the hollow arrows also show: the flow velocity and the size of the flow volume. Further, as described above, since the film 103a and the thin film portion l3b having a small film thickness are present in the resist 101, the flow direction of the anti-uranium agent 103 can be borrowed. For example, due to the large exposed area of the thickener environment, the diluent is quick and fluid. Furthermore, since the thick film portion is relatively fast and the volume of the anti-uranium agent is also large, as shown by I, the anti-contact agent 103 can surely reach the target region, and on the other hand, the thin film portion 1 〇 3 b, the thinner The product is thicker than the thick film part 1 0 3 a, so it is difficult to soften the 'active agent against the sputum agent [into the area 1 〇 4, the way of the flow to change the area 1 0 4 attached wave, let the resist 1 0 3 It will diffuse to the underlying film promoting region 104, and travel to the flow promotion. On the other hand, the progress toward the 103 is the thicker thick film portion of the resist 103 which is reversed to the ground, thereby controlling the softened film. Part 1 0 3 a, soaked in dilute, thereby softening 1 0 3 a softening, such as the exposed surface in the Si ° environment of Figure 6D, the fluidity ratio is not -29-200807499 (27) larger than the thick film portion 103a . Further, the thin film portion 103b is slow, and the resist volume is also smaller than the thick film portion 1 〇 3 a , and the flow of the resist 103 in the region S2 is suppressed, such as _ does not reach the prohibited region S2, and stops the deformation. . In this way, in addition to the resisting direction induced by the surface treatment, by using the resist 030 having the thick film portion 10a, thin and having a height difference on the surface, it is possible to more accurately recirculate the diffusion of the 103. Direction and return area, but also accuracy. 7A to 7D are cross-sectional views of the present invention, and schematically show a cross section formed on the surface 1 〇 3 of the substrate G. As shown in FIG. 7A, the underlayer film 102 is formed on the substrate G, and the target region S i and the forbidden region S2 on which the pattern has been formed are formed thereon, which is the same as the above. The end portion J below the target region S ! 1 〇 3 has an extended shape that is more laterally beyond the end portion of the lower layer film 1 〇 2 . On the other hand, in the case where the end portion of the phase 1 of Fig. 7A is larger than the lower end portion J of the resist 1 〇 3 (not shown), a step is formed by the underlayer film 1 〇 1 . In the softened resist 1 0 3 , if such a step is present, it takes a certain time for the softened anti-uranium agent to cross the step. Moreover, the softened stop is stopped during the step of the step, and the flow sag l〇3b of the agent 1 0 3 is shown as the prohibition of the softening travel toward the more flowable side, and the anti-uranium protection is controlled in the field. There is another etchant flow method for another nearby anti-caries agent underlayer film 1 〇1 and anti-hungry agent 103. Kind of. The anti-uranium agent on the side of the target region is opposite to the ground, and the Si layer on the Si side of the underlying film target region is in the middle of the film and the underlying film is stopped, and the resist 103 flows, so -30- ( 28) (28) 200807499 The control of the flow direction is also difficult. For this reason, in the present embodiment, the lower end portion J of the resist 1 〇 3 is formed to have an extended shape projecting toward the target region s i side from the end portion of the underlayer film 1 〇 2 . Next, as shown in Fig. 7B, the flow-promoting region 104 of the underlayer film 101 of the resist 103 to the target region Si by the surfactant is subjected to a surface treatment to allow the softened anti-uranium agent 103 to flow easily. Ways to improve its wettability. The wave-promoting region 104 of the surface treatment is attached with a wave. After the surface treatment is performed, as shown in Fig. 7C, in the case where the resist 103 is softened, although the softened resist 1 diffuses to the surface of the underlayer film 1 ,1, the flow of the surface treatment is promoted. In region 104, the wettability is improved, so that more of the resist 1 〇3 will travel to the side of the flow promoting region 104 and be induced to the target region S i . Further, as described above, the lower end portion J of the uranium-resistant agent 103 forms a resist 10 which is formed beyond the target region S! side than the end portion of the lower layer film 102, but faces the target region Si. The flow is not hindered by the underlying film 1 〇 2, and travels more smoothly. Therefore, as shown in Fig. 7D, the resist 1 〇 3 surely reaches the target region Si to cover the place. . On the other hand, the progress of the anti-caries agent 1 0 3 toward the prohibited region S 2 where the surface treatment is not performed is the more the resist 1 〇 3 toward the target region S i , and conversely, the more the reaction is suppressed. As shown in the figure, it does not reach the prohibited area S 2 and the deformation stops. In this way, in addition to inducing the flow direction of the resist 103 by surface treatment, the film 31 is further protruded by the end portion J of the resist 103 in advance, By rapidly diffusing the resist 103, the reflow processing time can be shortened, and the reflow direction can be controlled, and sufficient etching precision can be ensured. This surface treatment can also be carried out before the reflow treatment. For example, the surface treatment can be carried out prior to the reflow treatment. Further, for example, in the manufacturing process of the thin film transistor element, as described later, before and after the re-development processing of the resist, or before the re-development processing, the etching by etching may be removed. The surface modification layer of the agent is subjected to a surface treatment at a time point before and after the pretreatment performed for the purpose. Further, in the embodiments of FIGS. 6A to 6D, the height difference is provided on the surface, and the thick film portion 1 0 3 a having a thick film thickness is formed; and the thick film portion is compared with the thick film portion. 3a is formed by forming a thick film portion 1 〇 3 a on the side of the target region S 2 with respect to the resist of the thin film portion 10 〇 3b having a thin film thickness, and forming a thin film portion 10 3b on the side of the prohibited region S2, but Conversely, the thin film portion 103b may be formed on the side of the target region Si, and the thick film portion 103a may be formed on the side of the prohibition region s2. The reason for the relevant configuration is that the flow state of the anti-uranium agent 103 is based on the concentration of the diluent, the flow rate, and the temperature of the substrate G (support table 6 2 ) when being processed in the reflow processing unit (REFLW) 60. The conditions such as the internal pressure of the vacuum chamber 61 are changed. For example, as shown in Figures 8A to 8D, regarding the diluent concentration, flow rate, and internal pressure of the vacuum chamber, although these increases, the flow rate of the anti-hungry agent also increases, but the temperature is anti-uranium. The tendency of the flow rate of the agent i 03 to decrease as the temperature rises. That is, even if the shape and arrangement of the thick film portion 103a and the thin film portion 10b are the same, for example, the softening of the resist changes due to the concentration of the diluent in the vacuum chamber 61, and the flow direction is -32-200807499 (30) It is different from the movement speed and the like. Therefore, by combining the conditions of the organic solvent concentration, the flow rate, the substrate temperature, and the pressure in the reflow treatment, the experimentally optimum conditions are determined and selected, whereby the surface having the height difference (thick film portion, thin film portion) can be used. The resist 103 is arbitrarily controlled in its flow direction and coverage area. In addition, although the illustration is omitted, the embodiment in which the resist is changed and the thick film portion and the thin film portion are provided (see FIGS. 6A to 6D), and the embodiments shown in FIGS. 7A to 7D are omitted. Similarly, a configuration (extended shape) in which the lower end portion of the uranium-resistant agent 103 adjacent to the side of the target region S i is protruded can also be applied. At this time, the surface shape, the resist shape (thick film portion and the thin film portion), and the protruding shape (extended shape) of the lower end portion of the anti-uranium agent 1 0 3 adjacent to the target S i can be more precise. To control the flow direction, flow velocity and flow area of the resist. Further, in the embodiment shown in FIGS. 6A to 6D, the thick film portion and the thin film portion are provided in the anti-uranium film, but the change in the thickness of the resist is not limited to two stages, and may be Three or more changes. Further, the thickness of the resist film is not limited to a stepwise change, and a shape having an inclined surface having a gradually varying film thickness can be formed. At this time, for example, the coating film thickness of the resist is inclined in advance, whereby an inclined surface is formed on the surface of the resist after exposure. Next, an embodiment in which the reflow method of the present invention is applied to a method of manufacturing a thin film transistor device for a liquid crystal display device will be described with reference to Figs. 9 to 32. Fig. 9 is a flow chart showing the main construction of a method for manufacturing a thin film transistor device for a liquid crystal display device according to the first embodiment of the present invention. -33- (31) (31) 200807499 First, as shown in Fig. 1, a gate electrode 202 and a gate line (not shown) are formed on an insulating substrate 201 made of a transparent substrate such as glass. Further, the order of the gate insulating film 203 such as a tantalum nitride film, the a-Si (amorphous germanium) film 204, the n+ Si film 205 as a resistive contact layer, the metal film 206 for an electrode such as an Al alloy and a Mo alloy Lamination and deposition (step S 1 ) ° Next, as shown in Fig. 1, an anti-caries agent 2 0 7 is formed on the electrode metal film 2 0 6 (step S 2). Further, as shown in Fig. 2, the transmittance of the light varies depending on the portion, and the half mask 300 capable of changing the exposure amount of the resist 207 in different regions is applied to the exposure mask to perform exposure processing (step S3). The half mask 300 is formed to expose the resist 207 in three stages of exposure. The resist 207 is half-exposed as described above, and as shown in Fig. 3, an exposed uranium-repellent portion 208 and an unexposed resist portion 209 are formed. The unexposed resist portion 209 is formed to have a boundary with the exposed uranium-repellent portion 208 in a stepwise manner in accordance with the transmittance of the half mask 300. After the exposure, the development process is performed, whereby the exposed resist portion 208 is removed and the unexposed uranium-repellent portion 209 remains on the electrode metal film 206 as shown in Fig. 14 (step S4). The unexposed resist portion 209 is separated into: a source electrode resist mask 2 10 and a drain electrode mask 2 1 1 and patterned. The source electrode is covered with a resist mask 210 by a half exposure, and in a stepwise manner, the first film thickness portion 2 10a, the second film thickness portion 210b, and the first layer are formed in a stepwise manner. 3 thick film portion 210c. In the same manner, the resist electrode mask 211 for the drain electrode is formed in a stepwise manner by a half exposure, and the first film thickness portion 2 1 1 a and the second film thickness portion are formed in a stepwise manner. 34 - 200807499 (32) 2 1 1 b and the third film thickness portion 2 1 1 c. Further, the remaining unexposed resist portion 209 is used as an uranium engraved mask for the uranium-etched electrode metal film 206, and as shown in Fig. 15, the concave portion 220 of the channel region is formed later (step S5). ). By the uranium engraving, the source electrode 206a and the drain electrode 206b are formed, and the surface of the n + Si film '205 can be exposed in the recess 220 between the regions. Further, by etching, a thin surface alteration layer 301 is formed in the vicinity of the surface of the source electrode resist mask 203 and the uranium electrode 211 for the drain electrode. Next, the wet treatment is performed using the removal liquid, and the surface deterioration layer 301 for removing the metal film for electrode 6 6 is removed (step S6). After the pre-treatment, the re-development processing of the unexposed resist portion 209 on the source electrode 206a and the drain electrode 206b is partially removed (step S7). This pre-processing and re-development processing can be continued in the reproduction processing/removal unit (REDEV/REMV) 30 of the reflow processing system 1 。 . As shown in Fig. 9, the surface treatment using the surfactant can be performed before the pretreatment process of step S6, the period from the pretreatment process to the redevelopment process of step 7, or the reflow process of step 8. previous .  Implement at any point in time. Although the time of designing the surface treatment process will be described later, in the present embodiment, the cleaning process (washing process) after the pretreatment process is applied, and the surfactant is added to the cleaning liquid to perform the surface. The case of the processing is taken as an example, and the description will be made later. According to the re-development processing of the step 7, as shown in Fig. 16, the coverage area of the resist mask for the source electrode 2 1 0 and the resist mask for the drain electrode 2 1 1 is greatly reduced. . Specifically, the third electrode thickness portion 210c is completely removed by the source electrode anti-caries agent mask -35-200807499 (33) 2 10, and the first film thickness portion 210a and the second film thickness portion 210b are dissipated. There is a source electrode 206a. Further, in the same manner, the third electrode thickness portion 2 1 1 c is completely removed by the anti-uranium agent mask of the drain electrode, and the first film thickness portion 2 1 1 a and the second film thickness portion 2 1 are completely removed. 1 b will remain on the drain electrode 206b. • By performing the re-image processing, the coverage area of the source electrode anti-corrosion agent mask 210 and the anti-uranium agent mask 2 1 1 for the drain electrode is reduced, followed by reflow processing (step S8). In the case where the deformed resist is prevented from exceeding the end of the source electrode 206a or the end of the drain electrode 206b on the side opposite to the target region (the recess 220), the underlayer film (n+ Si film 205) is coated. Further, in Fig. 16, for the comparison, the source electrode resist mask 2 10 and the resist electrode resist mask 2 1 1 before the re-development processing are indicated by broken lines. profile. Further, a plan view corresponding to the cross-sectional structure shown in Fig. 16 is shown in Fig. 221. Further, as described above, in the present embodiment, in the cleaning process after the treatment in step S6, a surfactant is added to the cleaning liquid to perform surface treatment. Therefore, for example, in the state of Fig. 15 before the re-development processing, the entire exposed surface of the substrate G is surface-treated, but after the re-image processing shown in Fig. 6, the source electrode is reduced. The resist mask 210 and the drain electrode cover the coating area of the anti-hungry agent 2 1 , and the surface treated surface and the unsurface-treated area are formed on the surface of the substrate G. That is, the surface of the source electrode 20a and the drain electrode 206b shown in Fig. 16 is masked by the source electrode resist-36-200807499 (34) before the re-development process. The region 206c covered by the third thick portion 210c and the region 2 0 6d covered by the third thick portion 2 1 0 c of the resist mask 2 1 1 for the drain electrode are processed by the re-image processing. The resulting new exposed surface is thus subjected to a surface treatment in these areas (new exposed surfaces). Therefore, in Fig. 16, only the surface of the n + Si film 20 5 of the target region exposed in the recess portion 220 between the source electrode 206a and the drain electrode 206b, and the source electrode 206a are exposed. The surface of the n+Si film 205 on the outer side of the drain electrode 206b is surface-treated. However, the film thickness of the first film thickness portion 210a and the second film thickness portion 2 1 Ob (or the first film thickness portion 2 1 1 a and the second film thickness portion 2 1 1 b ) by the re-development processing is The total thickness (width) L i of the lateral direction is smaller than the total thickness (width) L 前 before re-imaging (refer to Fig. 15). Further, an end surface of the first film thickness portion 210a of the source electrode resist mask 210 adjacent to the concave portion 220 and an end surface of the source electrode 206a directly under the resist mask 210 are displaced in position and face the concave portion 220. There is a step D. Similarly, the end surface of the first electrode thick portion 2 1 1 a of the first electrode thick portion 2 1 1 a of the resist electrode covering the side of the concave portion 220 and the end surface of the drain electrode 206b directly under the mask portion of the recess portion 220 are shifted in position. And facing the recess 220, a step D is formed. That is, the source electrode is covered with a resist mask 2 1 0 and the anti-uranium agent mask 2 1 1 for the drain electrode is scraped in the lateral direction by the re-image processing, and is adjacent to the side of the recess 220. The distance between the end portion of the source electrode electrode and the end portion of the uranium electrode shield 211 for the drain electrode is larger than the end portion of the source electrode 206a and the front electrode of the lower layer. The distance at the end of 206b is even more awkward. -37- 200807499 (35) If such a step D is formed, in the next reflow process, not only the softening resist is used to coat the target region (in this case, the recess 220), the flow direction of the softening anti-caries agent The control is difficult because the flow stagnation is caused before the step D is crossed, which causes an increase in the reflow processing time, and 'becomes a cause of a decrease in throughput. Therefore, in the present embodiment, in the case where the softening resist easily flows into the concave portion 220 of the target region over the step D, the resist for the source electrode is shielded by the resist for the electrode and the electrode for the drain electrode. The etchant mask 2 1 1 is provided with a first film thickness portion 2 1 0a and 2 1 1 a as a thick film portion, and a second film thickness portion 2 1 Ob and 2 11 b as a thin film portion, respectively. The control of the flow direction of the softened resist and the shortening of the processing time. Further, in the reflow process (step S8), although the softened resist is liable to flow on the exposed surface of the n + Si film 205 in the concave portion 220 of the target region to which the surface treatment has been performed, it does not In the region where the surface electrode 2 0 6 a which is not subjected to the surface treatment and the region 2 0 6 c, 2 0 6 d of the drain electrode 2 0 6 b promote flow, the flow direction of the softened resist can be induced by surface treatment. . As a result, in the reflow treatment, the recess 220 which is the object of the channel region can be reliably covered with the resist which is softened by the organic solvent such as a diluent in a short time. . This reflow process is performed by the reflow processing unit (REFLW) 60 of Fig. 4. Fig. 17 is a view showing a state in which the periphery of the concave portion 220 is covered by the deformation resist 212. Fig. 22 is a plan view showing a configuration of a section corresponding to the section -38-200807499 (36) shown in Fig. 17. In the prior art, since the deformed resist diffuses to, for example, the side opposite to the concave of the source electrode 2 0 6 a and the drain electrode 2 0 6 b, it is coated on the n + S i film, for example, as a resistive contact layer. Therefore, the coated portion is not etched in the next etching process, so that the etching accuracy is impaired and the thin film transistor element is defective and good. Moreover, if a large area is estimated in advance to design a coating area by the etchant 2 1 2, since a required area (point area) is large for manufacturing a thin film electric component, there is a so-called high crystal element. In this embodiment, in the present embodiment, the resist for the source electrode is largely masked by the re-imaging treatment, and the anti-caries agent for the drain electrode is used. After the volume of the masking, the result of the reflow treatment, as shown in Fig. 17, the coated region of the deformed anti-uranium agent 2 1 2 is defined around the concave portion 220 of the reflow processing region, and the film of the deformed resist 2 1 2 Thicker and thinner. Therefore, it is also possible to correspond to the high-dimension refinement of the thin film transistor element. Next, as shown in FIG. 18, the source electrode 2 0 6 a, the 汲 2 0 6 b and the deformed resist 2 1 2 are used as an etch mask, and the n+Si film 205 and a are processed. The Si film 204 (step S9). However, as shown in Fig. 19, the resist 2 1 2 is removed by a method such as wet processing (step S 1 0 ). Then, the source electrode 2 0 6 a electrode 2 0 6 b is used as an etching mask, and the n + Si film 205 in the concave portion 220 is etched (step SI 1 ). With this,? As shown, a channel region 221 is formed. 212 Department 220 2 05, the rate of inversion reduced deformation resistance of the crystal element film. The ground reduction cover 211 shows that the target can also be shaped, and the electrode is etched, such as de-deformation and bungee exposure! 0 20-39-200807499 (37) Although the following works are omitted, for example, After forming a film of 2 2 1 , source wire 2 0 6 a, and drain electrode 2 0 6 b (step S 1 2 ), the source electrode 206a (drain electrode 206b) is borrowed by etching. S13), next, by indium lanthanum oxide ITO) or the like (step S1 4), thereby manufacturing a member for a liquid crystal display device. Here, the description will be made with reference to the timing of the processing from the 23rd to the 25th. As described above, in the manufacturing process of the liquid crystal display device which can be carried out in the order shown in FIG. 9 at an arbitrary time point before the reflow process, the time point shown in the following example is 2 3 The figure shows the form of the face washing treatment after the pretreatment process. First, in step S2 1, in the re-display unit (REDEV/REMV) 30, the substrate G is applied once, and in step 22, in order to rinse the substrate G, the removal liquid is discharged toward the substrate G, but in the cleaning liquid. The agent can be used to perform the interface work simultaneously with the cleaning solution.

其次在步驟S23，進行再顯像藥液的塗 驟S 24，爲了除去基板G上的再顯像藥液， 洗淨。由以上的步驟S21至步驟S24的處理 像處理/除去單元（REDEV/ REMV ) 30實 進行前處理及再顯像處理之洗淨後的基板C 覆蓋通道區域 式，將有機膜 由微影技術連 接觸孔（步驟 形成透明電極 薄膜電晶體元 •邊針對施行表 然表面處理， 實施，但在如 薄膜電晶體元 來實施爲佳。 淨工程進行表 像處理/除去 :佈去除液。其 :面的去除液， 添加界面活性 性劑的表面處 佈，接著在步 吐出洗淨液來 .，可連續再顯 施。而且，已 ί，往回流處理 - 40- 200807499 (38) 單元（REFLW ) 60移行，在此施行回流處理（步驟 S25 ) ° 像這樣，在前處理的洗淨工程實施表面處理的情況 下，若在其後的再顯像處理縮小抗鈾劑的被覆面積，因在 ' 基板G的表面形成有完成表面處理的區域與未面處理的區 • 域，故利用這個形成選擇性表面處理基板G之表面的流動 促進區域，故可將軟化抗蝕劑誘導到流動促進區域。又， 因藉由表面處理，軟化抗蝕劑的流動速度變快，故可縮短 回流工程的工程時間。 第24圖是表示在再顯像處理工程之後的洗淨工程進 行表面處理的形態。首先，在步驟S 3 1，與前所同樣地， 在再顯像處理/除去單元（REDEV/REMV) 30中，於基 板G塗佈去除液。其次，在步驟S 3 2，向著基板G吐出洗 淨液，來沖洗基板G表面的去除液。 其次，在步驟S 3 3中，於基板G塗佈再顯像藥液，進 行再顯像處理。接著在步驟S 3 4，爲了除去基板G上的再 顯像藥液，吐出洗淨液來洗淨。在該洗淨液中添加界面活 _ 性劑，藉此就能與洗淨處理同時進行藉由界面活性劑的表 面處理。 ^ 而且，已進行前處理及再顯像處理之洗淨後的基板 G，往回流處理單元（REFLW) 60移行，在此施行回流處 理（步驟S 3 5 )。 像這樣，在再顯像處理後的洗淨工程實施表面處理的 情況下，對基板G的整個露出面施行表面處理。因而，促 -41 - 200807499 (39) 進軟化抗鈾劑的流動速度’就能縮短回流工程的時間。 在以上第23圖及第24圖所示的形態中’藉由利用前 處理後或者再顯像處理後所施行的洗淨工程’在洗淨液中 添加界面活性劑’就不必另外設置表面處理工程’故不會 ' 增加回流處理整體的工程數量，就能實施表面處理的優 j 點。 第25圖是表示又另一形態，在此，係在回流處理之 前設置表面處理工程。 首先，在步驟S 41中，與前述同樣地，在再顯像處理 /除去單元（REDEV / REMV ) 30中，於基板G塗佈去除 液，接著，在步驟S42，向著基板G吐出洗淨液，從基板 G沖洗去除液。在步驟S43，對基板G塗佈再顯像藥液， 進行再顯像處理，接著在步驟S44，爲了除去基板G上的 再顯像藥液，吐出洗淨液來洗淨。 其次，已進行前處理及再顯像處理之洗淨後的基板 G，往回流處理單元（REFLW) 60移行，在此施行使用步 驟S45的界面活性劑的表面處理。亦即，在回流處理單元 (REFLW ) 60，例如將含有界面活性劑的表面處理液形成 氣體狀或霧狀之狀態而供給到基板，只施行表面處理。此 * 時，從第4圖所示的回流處理單元（REFLW) 60之表面 處理液供給源7 8，將含有界面活性劑的表面處理液形成氣 狀或霧狀，經由淋浴頭66吐出到基板G的處理空間，藉 此在真空室6 1內形成界面活性劑環境，就能施行表面處 理。 -42- 200807499 (40) 表面處理後，藉由設置在配管69a、69b的開閉閥 71、71的開閉，來閉鎖配管69b而切換到配管69a，從起 泡槽70對真空室6 1內導入稀釋劑等有機溶媒而切換成有 機溶媒環境，就能施行回流處理（步驟S 46)。 第26圖是表示有關本發明之第2實施形態的液晶顯 • 示裝置用薄膜電晶體元件之製造方法的槪要流程圖。第26 圖所示的第2實施形態的製造工程中，由於步驟S 5 1至步 驟S52與步驟S58〜步驟S64，是與第9圖所示的第1實 施形態的步驟S 1及步驟S 2、步驟S 8〜步驟S 1 4的工程相 同，因此，在此以與第1實施形態不同的步驟S 5 3〜步驟 S 5 7爲中心做說明。 在此，（由第1實施形態的第1 1圖之狀態）如第27 圖所示，施行將半遮罩 3 00應用於曝光遮罩的曝光處理 (步驟S53)。在本實施形態所用的半遮罩300是構成可 對抗鈾劑207，以兩階段的曝光量而曝光。藉由將抗蝕劑 2〇7加以半曝光，如第28圖所示，形成有：曝光抗蝕劑部 20 8 ;和未曝光抗蝕劑部209。未曝光抗蝕劑部209，是配 合半遮罩3 00的透過率，階段狀的形成有與曝光抗蝕劑部 208的邊界。 曝光後，進行顯像處理，藉此如第29圖所示，除去 曝光抗蝕劑部2 0 8，讓未曝光抗鈾劑部2 0 9殘存在電極用 金屬膜206上（步驟S54)。未曝光抗蝕劑部209被分離 成：源極電極用抗蝕劑遮罩2 1 0以及汲極電極用抗蝕劑遮 罩2 1 1，且形成圖案。源極電極用抗蝕劑遮罩2〗〇，是藉 -43 - 200807499 (41) 由半曝光，並按膜厚較厚的順序，階段狀的形成有：第1 膜厚部2 1 0 a及第2膜厚部2 1 0 b。汲極電極用抗飩劑遮罩 2 1 1，亦同樣地藉由半曝光，並按膜厚較厚的順序’階段 狀的形成有：第1膜厚部2 1 1 a及第2膜厚部2 1 1 b。 而且，以已殘存的未曝光抗蝕劑部2 0 9作爲蝕刻遮罩 < 來使用，用以蝕刻電極用金屬膜206，藉此如第3 0圖所 示，於後面形成通道區域的凹部220 (步驟S55 )。藉由 該蝕刻，形成有源極電極206a和汲極電極206b，且可讓 n+Si膜205的表面露出於該些之間的凹部220內。該蝕 刻，是例如：可藉由蝕刻氣體之電漿的乾式蝕刻、藉由使 用蝕刻液的濕式蝕刻施行。此時，以源極電極206a與汲 極電極206b往橫向被側蝕一定量而形成底切，且抗飩劑 遮罩的源極電極用抗蝕劑遮罩2 1 0及汲極電極用抗飩劑遮 罩2 1 1的各個下端部J，比源極電極206a的端部及汲極電 極206b的端部更朝向凹部220而突出的延伸形狀的方式 進行蝕刻。例如：在乾式蝕刻中，選擇產生等向性蝕刻劑 的蝕刻氣體來施行過度蝕刻，藉此進行側蝕，就能形成如 . 第3 0圖所示之形成有底切的蝕刻形狀。藉由乾式鈾刻施 行此種源極電極206a與汲極電極206b之側蝕的情況下， 作爲蝕刻氣體種，例如：可使用C12、B C13、C C14等之氯 系氣體等，且例如：以 10〜lOOPa左右的壓力條件而實 施。 又，藉由鈾刻，在源極電極用抗蝕劑遮罩2 1 0及汲極 電極用抗餽劑2 1 1的表面附近，形成有較薄的表面變質層 -44- 200807499 (42) 30卜 其次，在回流處理系統100的再顯像處理/除去單元 (REDEV/ REMV ) 30中，使用去除液來施行濕式處理， 且實施除去用來鈾刻電極用金屬膜206之際的表面變質層 3 〇 1前處理（步驟S 5 6 )。前處理後，施行部分除去源極 電極2 0 6 a與汲極電極2 0 6 b之上的未曝光抗蝕劑部2 0 9的 再顯像處理（步驟S 5 7 )。如第2 6圖所示，雖然使用界 面活性劑的表面處理，能在步驟S 5 6的前處理工程之前， 由該前處理工程至步驟5 7的再顯像處理工程的期間，或 者步驟5 8的回流處理工程之前的任一時間點來實施，但 在本實施形態中，在前處理工程之後的洗淨處理（洗淨工 程），在洗淨液中添加界面活性劑來施行表面處理。 藉由再顯像處理，如第3 1圖所示，源極電極用抗蝕 劑遮罩2 1 0及汲極電極用抗蝕劑遮罩2 1 1的被覆面積會大 幅地縮小。具體上，利用源極電極用抗蝕劑遮罩2 1 0，會 完全的除去第2膜厚部210b，且只有第1膜厚部210a會 殘存在源極電極206a上。又，汲極電極用抗蝕劑遮罩 211，也同樣地會完全的除去第2膜厚部211b，且只有第 1膜厚部211a會殘存在汲極電極206b上。再者，在第31 圖中，爲了比較，以虛線來表示再顯像處理前的源極電極 用抗蝕劑遮罩2 1 0及抗鈾劑電極用抗蝕劑遮罩2 1 1的輪 廓。 又，由於在步驟S 5 6的前處理工程後的洗淨工程中， 在洗淨淨中添加界面活性劑來施行表面處理，因此在第3 i -45- 200807499 (43) 圖所示的再顯像處理後的狀態，源極電極206a及汲極電 極2 06b的表面中，爲藉由再顯像處理所產生的新露出 面，在再顯像處理前，不對藉由源極電極用抗飩劑遮罩 2 1 0的第2膜厚部2 1 Ob所被覆的區域及藉由汲極電極用抗 ^ 鈾劑遮罩2 1 1的第2膜厚部2 1 1 b所被覆的區域，施行表 ， 處理。因而，在第31圖中，只有露出於源極電極206a與 汲極電極206b之間的凹部220內的標靶區域之n + Si膜 2 0 5的表面、以及露出於源極電極2 0 6 a與汲極電極2 0 6 b 之外側的n + Si膜205的表面被表面處理。 又，藉由再顯像處理，第1膜厚部210a的膜厚，其 橫向之厚度（寬度）L3，均小於再顯像前的合計厚度（寬 度）L2 (參照第3 0圖）。但即使源極電極用抗蝕劑遮罩 2 1 〇及汲極電極用抗蝕劑遮罩2 1 1的被覆面積縮小，仍能 維持各個下端部：T，比源極電極206a之端部及汲極電極 2〇6b的端部更朝凹部220突出的延伸形狀。因此，事先考 慮藉由步驟S 5 7的再顯像處理被削除的抗蝕劑量，來調節 步驟S55的金屬膜鈾刻中之源極電極206a與汲極電極 2〇6b的側蝕量（下端部j的突出量）。 像這樣，在本實施形態中，由於施行再顯像處理而減 少源極電極用抗蝕劑遮罩2 1 0及汲極電極用抗鈾劑遮罩 211的被覆面積，且未對新露出的源極電極20 6a及汲極電 極206b的表面（區域206c、206d)施行表面處理，因此在 回流處理（步驟S5 8)中，於後面，讓軟化抗蝕劑在短時間 流入到通道區域的凹部220，如第3 2圖所示，就能確實地 -46- 200807499 (44) 被覆凹部220。就是，雖然已軟化的抗蝕劑，易於在已施 行表面處理的標靶區域之凹部220內的n+ Si膜205之露 出面流動，但並不會在未施行表面處理的源極電極2 0 6 a 及汲極電極2 0 6 b的表面促進流動，就能藉由表面處理來 誘導軟化抗蝕劑的流動方向。進而，因在本實施形態，以 ' 軟化抗餽劑易於流入到標靶區域的凹部2 2 0內的方式，讓 源極電極抗蝕劑遮置2 1 0及汲極電極抗蝕劑遮罩2 1 1的下 端部J，比源極電極206a及汲極電極206b的端部更突 出，故朝向凹部220的軟化抗鈾劑之流動不會停滯，會順 利地進行。而且，能確實地防止在回流工程後，已變形的 抗蝕劑會超出與標靶區域（凹部220)相反之側的源極電極 2 0 6a的端部或汲極電極206b的端部，而被覆下層膜。 以後，雖省略圖示，但與第1實施形態同樣地，在步 驟S59蝕刻處理n+Si膜205及a— Si膜204，且在步驟 S 60除去變形抗蝕劑212之後，在步驟S61以源極電極 2〇6a及汲極電極206b作爲鈾刻遮罩來使用，而蝕刻處理 露出於凹部220內的η十Si膜205，且形成通道區域 . 221。而且，藉由有機膜堆積（步驟S62 )、接觸孔形成 (步驟 S63 )、銦鍚氧化物（ITO )等的透明電極形成 (步驟S 64 )，來製造液晶顯示裝置用的薄膜電晶體元 件。 以上，雖是針對本發明之實施形態做說明，但本發明 並不限於此種形態。 例如，在上述說明中，雖是舉例使用L C D用玻璃基 一 47 - 200807499 (45) 板的薄膜電晶體元件的製造’但在施行其他之平板顯示器 (FPD )基板、形成在半導體基板等之基板的抗餓劑之回 流處理的情況下，也可應用本發明。 又，在上述實施形態’雖以施行處理的區域作爲促進 回流工程的抗蝕劑之流動的流動促進區域’但選擇表面處 ' 理所用的界面活性劑的種類，藉此’相反地也能以表面處 理區域作爲抑制抗蝕劑流動的流動抑制區域的功能，讓抗 蝕劑選擇性地誘導到未表面處理區域。 〔產生上的可利用性〕 本發明例如可適當利用於薄膜電晶體元件等的半導體 裝置之製造。 【圖式簡單說明】 第1圖爲說明回流處理系統的槪要圖面。 第2圖爲表示再顯像處理/除去單元之槪略構成的俯 視圖。 • 第3圖爲表示再顯像處理/除去單元之槪略構成的剖 面圖。 第4圖爲表示回流處理單元（REFLW )之槪略構成的 剖面圖。 第5 A圖爲有關本發明之其中一實施形態的回流法之 原理圖’表示表面處理前的狀態。 第5 B圖爲有關本發明之其中一實施形態的回流法之 -48- 200807499 (46) 原理圖，表示表面處理後的狀態。 第5 B圖爲有關本發明之其中一實施形態的回流法之 原理圖，表示回流途中的狀態。 第5 D圖爲有關本發明之其中一實施形態的回流法之 原理圖，表示回流後的狀態。 • 第6A圖爲有關本發明之另一實施形態的回流法之原 理圖，表示表面處理前的狀態。 第6B圖爲有關本發明之另一實施形態的回流法之原 理圖，表示表面處理後的狀態。 第6 C圖爲有關本發明之另一實施形態的回流法之原 理圖，表示回流途中的狀態。 第6D圖爲有關本發明之另一實施形態的回流法之原 理圖，表示回流後的狀態。 第7A圖爲有關本發明之又另一實施形態的回流法之 原理圖，表示表面處理前的狀態。 第7B圖爲有關本發明之又另一實施形態的回流法之 原理圖，表示表面處理後的狀態。 第7C圖爲有關本發明之又另一實施形態的回流法之 原理圖，表示回流途中的狀態。 • 第7D圖爲有關本發明之又另一實施形態的回流法之 原理圖，表示回流後的狀態。 第8A圖爲說明軟化抗鈾劑的流動速度與稀釋劑濃度 之關係的圖面。 第8 B圖爲說明軟化抗蝕劑的流動速度與溫度之關係 -49- 200807499 (47) 的圖面。 第8 C圖爲說明軟化抗蝕劑的流動速度與壓力之關係 的圖面。 第8D圖爲說明軟化抗蝕劑的流動速度與稀釋流量之 關係的圖面。 • 第9圖是表示有關本發明之第1實施形態的薄膜電晶 體元件之製造工程的流程圖。 第1 〇圖爲在薄膜電晶體元件之製造工程中，在絕緣 基板上形成有：閘極電極及層積膜之狀態的基板之縱剖面 圖。 第1 1圖爲在薄膜電晶體元件之製造工程中，在絕緣 基板上形成有：閘極電極及層積膜之狀態的基板之縱剖面 圖。 第1 2圖爲在薄膜電晶體元件之製造工程中，施行半 曝光處理之狀態的基板之縱剖面圖。 第13圖爲在薄膜電晶體元件之製造工程中，半曝光 處理的基板之縱剖面圖。 第1 4圖爲在薄膜電晶體元件之製造工程中’顯像後 的基板之縱剖面圖。 ^ 第1 5圖爲在薄膜電晶體元件之製造工程中’鈾刻電 極用金屬膜之後的基板之縱剖面圖。 第1 6圖爲在薄膜電晶體元件之製造工程中’再顯像 處理後的基板之縱剖面圖。 第1 7圖爲在薄膜電晶體元件之製造工程中’回流處 -50- 200807499 (48) 理後的基板之縱剖面圖。 第1 8圖爲在薄膜電晶體元件之製造工程中，蝕刻η + Si膜及a- Si膜之後的基板之縱剖面圖。 第1 9圖爲在薄膜電晶體元件之製造工程中，除去變 形抗蝕劑之後的基板之縱剖面圖。 第20圖爲在薄膜電晶體元件之製造工程中，形成通 道區域之狀態的基板之縱剖面圖。 第2 1圖爲對應於第1 6圖的俯視圖。 第22圖爲對應於第1 7圖的俯視圖。 第2 3圖爲說明包含表面處理工程的回流處理順序之 其中一'例的流程圖。 第2 4圖爲說明包含表面處理工程的回流處理順序之 另一例的流程圖。 第2 5圖爲說明包含表面處理工程的回流處理順序之 又另一例的流程圖。 第26圖是表示有關本發明之第2實施形態的薄膜電 晶體元件之製造工程的流程圖。 第27圖爲在有關第2實施形態的薄膜電晶體元件之 製造工程中，施行半曝光處理之狀態的基板之縱剖面圖。 第2 8圖爲在有關第2實施形態的薄膜電晶體元件之 製造工程中，施行半曝光處理後的基板之縱剖面圖。 第29圖爲在有關第2實施形態的薄膜電晶體元件之 製造工程中，施行再顯像處理後的基板之縱剖面圖。 第3 0圖爲在有關第2實施形態的薄膜電晶體元件之 -51 - 200807499 (49) 製造工程中，鈾刻電極用金屬膜之後的基板之縱剖面圖。 第3 1圖爲在有關第2實施形態的薄膜電晶體元件之 製造工程中，施行再顯像處理後的基板之縱剖面圖。 第32圖爲在有關第2實施形態的薄膜電晶體元件之 ' 製造工程中，施行回流處理後的基板之縱剖面圖。 【主要元件符號說明】 1 :卡匣站 2 :處理站 3 :控制部 2〇 :中央搬送路徑 21 :搬送裝置 3〇:再顯像處理/除去單元（REDEV/REMV) 6〇:回流處理單元（REFLW) 80a、80b、80c:加熱/冷卻處理單元（HP/COL) 1〇〇 :回流處理系統 101、102 :下層膜 1 0 3 :抗蝕劑 1 0 3 a :厚膜部 • l〇3b :薄膜部 ' 104 :流動促進區域 G :基板 D :段差 J :下端部 -52- 200807499 (50) S i :標靶區域 s2 :禁止區域 -53Next, in step S23, the re-imaging liquid chemical application S 24 is performed, and the re-image developing liquid on the substrate G is removed and washed. The processed image processing/removal unit (REDEV/REMV) 30 of the above steps S21 to S24 performs the pre-processing and the re-image processing, and the substrate C covers the channel region type, and the organic film is connected by the lithography technique. Contact hole (step formation of transparent electrode film transistor) is carried out for surface treatment, but it is preferably implemented as a thin film transistor. Net engineering for image processing/removal: cloth removal liquid. The removal liquid, the surface of the surfactant is added, and then the cleaning liquid is discharged at the step. It can be continuously applied again. Moreover, it has been reflowed - 40-200807499 (38) unit (REFLW) 60 In the case of migration, the reflow treatment is performed here (step S25). In this case, in the case where the surface treatment of the pre-treatment cleaning process is performed, if the re-development processing thereafter reduces the coverage area of the uranium-repellent agent, the substrate is The surface of G is formed with a surface which is subjected to surface treatment and a region which is not surface-treated, so that the flow promoting region of the surface of the substrate G is selectively formed by this selective surface treatment, so that the soft resist can be lured In the flow promotion region, the surface of the softening resist is accelerated by the surface treatment, so that the engineering time of the reflow process can be shortened. Fig. 24 is a view showing the surface of the cleaning process after the re-image processing project In the same manner as before, in the re-development processing/removing unit (REDEV/REMV) 30, the removal liquid is applied to the substrate G. Next, in step S3 2, The cleaning liquid is discharged to the substrate G to rinse the removal liquid on the surface of the substrate G. Next, in step S3 3, the re-developing chemical liquid is applied onto the substrate G to perform re-development processing. Then, in step S34, In order to remove the re-developing solution on the substrate G, the cleaning solution is discharged and washed. By adding an interfacial agent to the cleaning solution, the surface of the surfactant can be simultaneously performed with the cleaning treatment. Further, the substrate G which has been subjected to the pre-treatment and the re-image processing is moved to the reflow processing unit (REFLW) 60, and a reflow process is performed here (step S3 5). Like the treatment of the post-treatment cleaning process In this case, the entire exposed surface of the substrate G is subjected to a surface treatment. Therefore, the flow rate of the softening anti-uranium agent can shorten the time of the reflow process. In the above Figs. 23 and 24 In the illustrated form, 'by adding the surfactant to the cleaning solution after the pre-treatment or re-imaging treatment, it is not necessary to set a surface treatment project separately, so it does not increase the reflow treatment. The overall number of works can be used to perform the surface treatment. Fig. 25 shows still another embodiment, in which a surface treatment process is provided before the reflow process. First, in step S41, in the re-development processing/removal unit (REDEV / REMV) 30, the removal liquid is applied to the substrate G, and then, in step S42, the cleaning liquid is discharged toward the substrate G. , rinse the liquid from the substrate G. In step S43, the re-developing solution is applied to the substrate G to perform re-development processing. Then, in step S44, in order to remove the re-developing solution on the substrate G, the cleaning solution is discharged and washed. Next, the cleaned substrate G subjected to the pretreatment and the re-image processing is transferred to the reflow processing unit (REFLW) 60, and the surface treatment of the surfactant in the step S45 is performed here. That is, in the reflow processing unit (REFLW) 60, for example, the surface treatment liquid containing the surfactant is supplied to the substrate in a gaseous or mist state, and only the surface treatment is performed. At this time, the surface treatment liquid containing the surfactant is formed into a gas or mist shape from the surface treatment liquid supply source 7 of the reflow processing unit (REFLW) 60 shown in Fig. 4, and is discharged to the substrate via the shower head 66. The processing space of G, whereby a surfactant environment is formed in the vacuum chamber 61, can be subjected to surface treatment. -42-200807499 (40) After the surface treatment, the opening and closing valves 71 and 71 provided in the pipes 69a and 69b are opened and closed, the pipe 69b is closed, and the pipe 69a is closed, and the inside of the vacuum chamber 6 1 is introduced from the bubbler 70. When an organic solvent such as a diluent is switched to an organic solvent environment, a reflow treatment can be performed (step S46). Figure 26 is a schematic flowchart showing a method of manufacturing a thin film transistor device for a liquid crystal display device according to a second embodiment of the present invention. In the manufacturing process of the second embodiment shown in Fig. 26, steps S51 to S52 and steps S58 to S64 are steps S1 and S2 of the first embodiment shown in Fig. 9. Since the processes of the steps S8 to S14 are the same, the description will be centered on steps S53 to S57 which are different from the first embodiment. Here, (in the state of the first embodiment of the first embodiment), as shown in Fig. 27, exposure processing for applying the half mask 300 to the exposure mask is performed (step S53). The half mask 300 used in the present embodiment is configured to be capable of resisting the uranium agent 207 and exposed to exposure in two stages. By partially exposing the resist 2?7, as shown in Fig. 28, an exposure resist portion 208 and an unexposed resist portion 209 are formed. The unexposed resist portion 209 has a transmittance corresponding to the half mask 300, and is formed at a boundary with the exposed resist portion 208 in a stepwise manner. After the exposure, the development process is performed, whereby as shown in Fig. 29, the exposed resist portion 20 8 is removed, and the unexposed uranium-repellent portion 2 0 9 remains on the electrode metal film 206 (step S54). The unexposed resist portion 209 is separated into a source electrode resist mask 2 10 and a drain electrode mask 2 1 1 and patterned. The source electrode is covered with a resist mask 2, which is a semi-exposure, and in the order of thick film thickness, the stage is formed: the first film thickness portion 2 1 0 a And the second film thickness portion 2 1 0 b. The bucker electrode is covered with an anti-caries agent, and the second film thickness is formed by a half-exposure and in the order of thick film thickness: the first film thickness portion 2 1 1 a and the second film thickness. Part 2 1 1 b. Further, the remaining unexposed resist portion 209 is used as an etch mask <RTIgt; used to etch the metal film 206 for the electrode, whereby the recess of the channel region is formed later as shown in Fig. 220 (step S55). By this etching, the source electrode 206a and the drain electrode 206b are formed, and the surface of the n+Si film 205 can be exposed in the recess 220 between the electrodes. The etching is performed, for example, by dry etching of a plasma of an etching gas by wet etching using an etching liquid. At this time, the source electrode 206a and the drain electrode 206b are laterally etched by a certain amount to form an undercut, and the source electrode of the anti-caries agent mask is covered with a resist mask for the solar cell and the antimony electrode. Each of the lower end portions J of the sputum mask 2 1 1 is etched so as to extend toward the concave portion 220 more than the end portion of the source electrode 206a and the end portion of the drain electrode 206b. For example, in the dry etching, an etching gas which generates an isotropic etchant is selected to perform over-etching, thereby performing side etching, whereby an undercut etching shape as shown in Fig. 30 can be formed. When the side electrode of the source electrode 206a and the drain electrode 206b is etched by the dry uranium engraving, as the etching gas species, for example, a chlorine-based gas such as C12, B C13 or C C14 can be used, and for example, It is carried out under pressure conditions of about 10 to 100 Pa. Further, by the uranium engraving, a thin surface alteration layer is formed in the vicinity of the surface of the source electrode resist mask 2 1 0 and the drain electrode anti-feed agent 2 1 1 - 44 - 200807499 (42) 30. Next, in the re-development processing/removal unit (REDEV/REMV) 30 of the reflow processing system 100, the removal treatment is performed using the removal liquid, and the surface for removing the metal film 206 for the uranium electrode is removed. The metamorphic layer 3 is pretreated (step S56). After the pre-treatment, the re-development processing of the unexposed resist portion 2 0 9 on the source electrode 2 0 6 a and the drain electrode 2 0 6 b is partially removed (step S 5 7 ). As shown in Fig. 26, although the surface treatment of the surfactant is used, the period from the pretreatment process to the redevelopment process of step 57 can be performed before the pretreatment process of step S56, or step 5 At any time before the reflow treatment of 8 is carried out, in the present embodiment, the surface treatment is performed by adding a surfactant to the cleaning liquid after the pretreatment process (washing process). By the re-development processing, as shown in Fig. 3, the coverage area of the resist mask for the source electrode 210 and the resist mask 2 1 1 for the drain electrode is largely reduced. Specifically, the second film thickness portion 210b is completely removed by the mask mask of the source electrode, and only the first film thickness portion 210a remains on the source electrode 206a. Further, the drain electrode is shielded by the resist 211, and the second film thickness portion 211b is completely removed in the same manner, and only the first film thickness portion 211a remains on the drain electrode 206b. Further, in Fig. 31, for the purpose of comparison, the outline of the resist mask for the source electrode before the re-image processing, and the outline of the resist mask for the uranium-resistant electrode electrode 21 1 1 are indicated by broken lines. . Further, since the surfactant is added to the cleaning process in the cleaning process after the pretreatment process in step S56, the surface treatment is performed, so that it is shown in the third i-45-200807499 (43). In the state after the development process, the surface of the source electrode 206a and the drain electrode 206b is a newly exposed surface generated by the re-development process, and the source electrode is not resistant before the re-development process. The region covered by the second film thickness portion 2 1 Ob of the sputum mask 2 1 0 and the region covered by the second film thickness portion 2 1 1 b of the uranium counter mask 2 1 1 , execution table, processing. Therefore, in Fig. 31, only the surface of the n + Si film 205 of the target region exposed in the recess 220 between the source electrode 206a and the drain electrode 206b, and the source electrode 2 0 6 are exposed. The surface of the n + Si film 205 outside the a and the drain electrode 2 0 6 b is surface-treated. Further, by the re-development processing, the thickness (width) L3 of the film thickness of the first film thickness portion 210a is smaller than the total thickness (width) L2 before re-imaging (see Fig. 30). However, even if the coverage area of the resist mask 2 1 源 for the source electrode and the resist mask 2 1 1 for the drain electrode is reduced, the lower end portion T can be maintained, and the end portion of the source electrode 206a can be maintained. The end of the gate electrode 2〇6b has an extended shape that protrudes toward the recess 220. Therefore, the amount of side etching of the source electrode 206a and the gate electrode 2〇6b in the metal film uranium engraving in step S55 is adjusted in advance in consideration of the amount of the resist removed by the re-development process of step S57 (lower end) The amount of protrusion of the part j). As described above, in the present embodiment, the re-developing process is performed to reduce the coverage area of the source electrode resist mask 2 10 and the drain electrode anti-uranium agent mask 211, and the new area is not exposed. The surfaces (regions 206c, 206d) of the source electrode 20 6a and the drain electrode 206b are subjected to surface treatment, so that in the reflow process (step S58), the softened resist is allowed to flow into the recess of the channel region in a short time. 220, as shown in Fig. 3, it is possible to reliably cover the recess 220 from -46 to 200807499 (44). That is, although the softened resist is liable to flow on the exposed surface of the n + Si film 205 in the concave portion 220 of the target region where the surface treatment has been performed, it is not in the source electrode 2 0 6 where the surface treatment is not performed. The surface of a and the surface of the drain electrode 2 0 6 b promotes flow, and the flow direction of the softened resist can be induced by surface treatment. Further, in the present embodiment, the source electrode resist is shielded from the 1 0 0 and the drain electrode resist mask so that the softening-feeding agent easily flows into the concave portion 220 of the target region. Since the lower end portion J of 2 1 1 protrudes more than the end portions of the source electrode 206a and the drain electrode 206b, the flow of the softened anti-uranium agent toward the concave portion 220 does not stagnate and proceeds smoothly. Moreover, it is possible to surely prevent the deformed resist from exceeding the end of the source electrode 220a or the end of the drain electrode 206b on the side opposite to the target region (recess 220) after the reflow process. The underlayer film is coated. In the same manner as in the first embodiment, the n+Si film 205 and the a-Si film 204 are etched and processed in step S59, and after the deformed resist 212 is removed in step S60, the step S61 is performed in step S61. The source electrode 2〇6a and the drain electrode 206b are used as an uranium mask, and the etching process is exposed to the n-th Si film 205 in the recess 220, and a channel region is formed. Then, a thin film transistor for a liquid crystal display device is produced by forming an organic film (step S62), forming a contact hole (step S63), and forming a transparent electrode such as indium lanthanum oxide (ITO) (step S64). Although the embodiments of the present invention have been described above, the present invention is not limited to this embodiment. For example, in the above description, the manufacture of a thin film transistor element using a glass substrate-47-200807499 (45) plate for LCD is exemplified, but other flat panel display (FPD) substrates, substrates formed on a semiconductor substrate, or the like are applied. The present invention can also be applied in the case of reflux treatment of an anti-hungry agent. Further, in the above-described embodiment, the region to be treated is used as a flow promoting region for promoting the flow of the resist in the reflow process, but the type of the surfactant used for the surface is selected, whereby the opposite can also be used. The surface treatment region functions as a flow suppression region for suppressing the flow of the resist, and the resist is selectively induced to the unsurface-treated region. [Availability in Production] The present invention can be suitably used, for example, in the manufacture of a semiconductor device such as a thin film transistor element. [Simple description of the drawing] Fig. 1 is a schematic view showing the reflow processing system. Fig. 2 is a plan view showing a schematic configuration of a re-development processing/removal unit. • Fig. 3 is a cross-sectional view showing a schematic configuration of a re-development processing/removal unit. Fig. 4 is a cross-sectional view showing a schematic configuration of a reflow processing unit (REFLW). Fig. 5A is a schematic diagram of a reflow method according to an embodiment of the present invention, which shows a state before surface treatment. Fig. 5B is a schematic diagram of -75-200807499 (46) of the reflow method according to one embodiment of the present invention, showing the state after the surface treatment. Fig. 5B is a schematic diagram showing a reflow method according to an embodiment of the present invention, showing a state in the middle of the return flow. Fig. 5D is a schematic diagram of a reflow method according to an embodiment of the present invention, showing a state after reflow. Fig. 6A is a schematic view showing a reflow method according to another embodiment of the present invention, showing a state before surface treatment. Fig. 6B is a schematic view showing a reflow method according to another embodiment of the present invention, showing a state after surface treatment. Fig. 6C is a schematic diagram showing a reflow method according to another embodiment of the present invention, showing a state in the middle of the return flow. Fig. 6D is a schematic view showing a reflow method according to another embodiment of the present invention, showing a state after reflow. Fig. 7A is a schematic diagram showing a reflow method according to still another embodiment of the present invention, showing a state before surface treatment. Fig. 7B is a schematic diagram showing a reflow method according to still another embodiment of the present invention, showing a state after surface treatment. Fig. 7C is a schematic diagram showing a reflow method according to still another embodiment of the present invention, showing a state in the middle of the return flow. Fig. 7D is a schematic diagram showing a reflow method according to still another embodiment of the present invention, showing a state after reflow. Figure 8A is a diagram illustrating the relationship between the flow rate of the softened uranium-resistant agent and the diluent concentration. Figure 8B is a diagram showing the relationship between the flow rate of the softened resist and the temperature -49-200807499 (47). Fig. 8C is a view showing the relationship between the flow velocity of the softened resist and the pressure. Fig. 8D is a view showing the relationship between the flow rate of the softening resist and the dilution flow rate. Fig. 9 is a flow chart showing the manufacturing process of the thin film transistor device according to the first embodiment of the present invention. The first drawing is a longitudinal cross-sectional view of a substrate in which a gate electrode and a laminated film are formed on an insulating substrate in the manufacturing process of a thin film transistor element. Fig. 1 is a longitudinal sectional view of a substrate in a state in which a gate electrode and a laminated film are formed on an insulating substrate in the manufacturing process of a thin film transistor element. Fig. 1 is a longitudinal sectional view of a substrate in a state in which a half exposure process is performed in the manufacturing process of a thin film transistor element. Fig. 13 is a longitudinal sectional view of a substrate subjected to a half exposure process in the manufacturing process of a thin film transistor element. Fig. 14 is a longitudinal sectional view of the substrate after development in the manufacturing process of the thin film transistor element. ^ Fig. 15 is a longitudinal sectional view of the substrate after the metal film for uranium engraving electrodes in the manufacturing process of the thin film transistor element. Fig. 16 is a longitudinal sectional view of the substrate after the re-image processing in the manufacturing process of the thin film transistor element. Fig. 17 is a longitudinal sectional view of the substrate after the reflow of -50-200807499 (48) in the manufacturing process of the thin film transistor element. Fig. 18 is a longitudinal sectional view of the substrate after etching the η + Si film and the a-Si film in the manufacturing process of the thin film transistor element. Fig. 19 is a longitudinal sectional view of the substrate after the deforming resist is removed in the manufacturing process of the thin film transistor element. Fig. 20 is a longitudinal sectional view showing a substrate in a state in which a channel region is formed in a manufacturing process of a thin film transistor element. Fig. 2 is a plan view corresponding to Fig. 16. Fig. 22 is a plan view corresponding to Fig. 17. Fig. 2 is a flow chart showing one of the examples of the reflow processing sequence including the surface treatment engineering. Fig. 24 is a flow chart showing another example of the reflow processing sequence including the surface treatment engineering. Fig. 25 is a flow chart for explaining still another example of the reflow processing sequence including the surface treatment engineering. Fig. 26 is a flow chart showing the manufacturing process of the thin film transistor element according to the second embodiment of the present invention. Figure 27 is a longitudinal sectional view of a substrate in a state in which a half exposure process is performed in the manufacturing process of the thin film transistor element according to the second embodiment. Fig. 28 is a longitudinal sectional view showing a substrate subjected to a half exposure process in the manufacturing process of the thin film transistor device according to the second embodiment. Figure 29 is a longitudinal cross-sectional view showing a substrate after performing a re-developing process in the manufacturing process of the thin film transistor device according to the second embodiment. Fig. 30 is a longitudinal cross-sectional view of the substrate after the metal film for uranium-etching electrodes in the manufacturing process of the film-formed crystal element of the second embodiment -51 - 200807499 (49). Fig. 3 is a longitudinal cross-sectional view of the substrate after the re-developing process is performed in the manufacturing process of the thin film transistor element according to the second embodiment. Fig. 32 is a longitudinal sectional view of the substrate after the reflow treatment in the manufacturing process of the thin film transistor device according to the second embodiment. [Description of main component symbols] 1 : Card station 2 : Processing station 3 : Control unit 2 : Central transfer path 21 : Transfer device 3 : Re-development processing / removal unit (REDEV / REMV) 6 : Reflow processing unit (REFLW) 80a, 80b, 80c: heating/cooling treatment unit (HP/COL) 1〇〇: reflow processing system 101, 102: lower layer film 1 0 3 : resist 1 0 3 a : thick film portion • l〇 3b: film portion '104: flow promotion region G: substrate D: step J: lower end portion - 52 - 200807499 (50) S i : target region s2: prohibited region - 53

Claims (1)

200807499 (1) 十、申請專利範圍 1. 一種回流法，是對具有：下層膜；和以形成有在比 該下層膜更上層而露出有前述下層膜的露出區域與被覆有 前述下層膜的被覆區域的方式，形成圖案的抗蝕劑膜之被 ' 處理體，使前述抗蝕劑膜的抗蝕劑軟化而流動，藉此來被 - 覆前述露出區域的一部分或全部的回流法，其特徵爲： 包含用以促進已軟化的前述抗蝕劑之流動，對前述露 出區域事先施以表面處理的工程。 2. 如申請專利範圍第1項所記載的回流法，其中， 將包含前述露出區域與前述被覆區域的被處理體之表 面整體進行表面處理之後，部分除去前述被覆區域的抗蝕 齊ϋ。 3 ·如申請專利範圍第1項或第2項所記載的回流法， 其中， 藉由界面活性劑施行前述表面處理。 4 .如申請專利範圍第丨項或第2項所記載的回流法， 其中， ^ 使用膜厚因部位而變化，且至少具有：膜厚較厚的厚 膜部；和對該厚膜部而言，相對上膜厚較薄的薄膜部之形 狀的抗蝕劑膜，作爲前述抗鈾劑膜。 5 .如申請專利範圍第4項所記載的回流法，其中， 藉由前述厚膜部與前述薄膜部的配置，來控制已軟化 的前述抗蝕劑的流動方向。 6 .如申請專利範圍第4項所記載的回流法，其中， - 54- 200807499 (2) 藉由前述厚膜部與前述薄膜部的配置，來控制藉由已 軟化的前述抗飩劑的被覆面積。 7 ·如申請專利範圍第1項或第2項所記載的回流法， 其中， 以使用其端部，比該抗鈾劑膜之正下方之膜的端部更 向著前述露出區域的上方突出之形狀的抗蝕劑膜，作爲前 述抗蝕劑膜。 8 .如申請專利範圍第i項或第2項所記載的回流法， 其中， 使前述抗蝕劑在有機溶劑環境中變形。 9 ·如申請專利範圍第1項或第2項所記載的回流法， 其中， 藉由使用半遮罩的半曝光處理及其後的顯像處理，來 施行前述抗飩劑膜的圖案形成。 10.—種圖案形成方法，是包含： 在比被處理體的被蝕刻膜更上層形成抗蝕劑膜的抗蝕 劑膜形成工程；和 將前述抗鈾劑膜形成圖案的遮罩圖案化工程；和 將前述已圖案形成的抗蝕劑膜再進行顯像處理，而使 其被覆面積縮小的再顯像處理工程；和 使前述抗蝕劑膜的抗蝕劑軟化而變形，並且被覆前述 被鈾刻膜之標靶區域的回流工程；和 以變形後的前述抗蝕劑作爲遮罩，來蝕刻前述被蝕刻 膜之露出區域的第1蝕刻工程；和 -55- 200807499 (3) 除去變形後的前述抗餓劑的工程；和 對藉由除去變形後的前述抗蝕劑而再露出的前述被蝕 刻膜之標靶區域進行蝕刻的第2蝕刻工程， 更包含：在前述回流工程之前，先以促進已軟化的前 * 述抗蝕劑的流動，朝向前述被飩刻膜的標靶區域之方式， • 對前述被處理體事先施以表面處理的工程。 11 ·如申請專利範圍第1 〇項所記載的圖案形成方法， 其中， 藉由界面活性劑施行前述表面處理。 1 2.如申請專利範圍第1 1項所記載的圖案形成方法， 其中， 更包含：在前述再顯像處理工程之前除去前述抗蝕劑 膜之表面變質層的前處理工程；和在該前處理工程之後， 洗淨前述被處理體的洗淨工程，在前述洗淨工程的洗淨液 中，添加前述界面活性劑，來施行表面處理。 1 3 .如申請專利範圍第1 2項所記載的圖案形成方法， 其中， 在表面處理後的前述再顯像處理工程中，部分地除去 前述抗蝕劑膜，且露出未被表面處理的下層膜表面。 ' 1 4.如申請專利範圍第1 1項所記載的圖案形成方法， 其中， 更包含：在前述再顯像處理工程之後，洗淨被處理體 的洗淨工程，且在前述洗淨工程的洗淨液中，添加前述界 面活性劑，來施行表面處理。 -56- 200807499 (4) 1 5 .如申請專利範圍第1 1項所記載的圖案形成方法， 其中， 在前述回流工程之前’在含有前述界面活性劑的藥液 環境中，對被處理體施行表面處理。 1 6 .如申請專利範圍第1 〇項至第1 5項之任一項所記 載的圖案形成方法，其中， 前述抗蝕劑膜，是爲膜厚因部位而變化’且至少具有 膜厚較厚的厚膜部與對該厚膜部而言，相對上膜厚較薄的 薄膜部的形狀， 在前述回流工程中，藉由前述厚膜部與前述薄膜部的 配置，來控制前述軟化抗蝕劑之流動方向。 1 7 .如申請專利範圍第1 0項至第1 5項之任一項所記 載的圖案形成方法，其中， 前述抗蝕劑膜，是爲膜厚因部位而變化，且至少具有 膜厚較厚的厚膜部與對該厚膜部而言，相對上膜厚較薄的 薄膜部的形狀， 在前述回流工程中，藉由前述厚膜部與前述薄膜部的 配置，來控制藉由前述軟化抗蝕劑之被覆面積。 1 8 .如申請專利範圍第1 0項至第1 5項之任一項所記 載的圖案形成方法，其中， 以使用其端部，比該抗飩劑膜之正下方之下層膜的端 部更向著前述標靶區域的上方突出之形狀的抗蝕劑膜，作 爲前述抗蝕劑膜。 1 9 .如申請專利範圍第丨〇項至第1 5項之任一項所記 -57- 200807499 (5) 載的圖案形成方法，其中， 在前述回流工程中，使前述抗蝕劑在有機溶劑環境中 變形。 2 0 ·如申請專利範圍第1 0項至第1 5項之任一項所記 ' 載的圖案形成方法，其中， * 藉由使用半遮罩的半曝光處理及其後的顯像處理，來 施行前述遮罩圖案化工程。 2 1 ·如申請專利範圍第i 〇項至第1 5項之任一項所記 載的圖案形成方法，其中， 被處理體是在基板上形成閘極線及閘極電極，並且形 成有覆蓋這些的閘極絕緣膜，更在前述閘極絕緣膜上，由 下依序形成有：a - S i膜、電阻接觸用S i膜及源極、汲極 用金屬膜的層積構造體，且前述被蝕刻膜是前述電阻接觸 用Si膜。 22 . —種液晶顯示裝置用薄膜電晶體元件之製造方 法，其包含： 在基板上形成閘極線及閘極電極的工程；和 形成覆蓋前述閘極線及前述閘極電極之閘極絕緣膜的 工程；和 ’ 在前述閘極絕緣膜上，由下依序堆積a - S i膜、電阻 接觸用S i膜及源極、汲極用金屬膜的工程；和 在前述源極、汲極用金屬膜上形成抗鈾劑膜的工程； 和 將前述抗鈾劑膜進行半曝光處理及顯像處理，來形成 - 58- 200807499 (6) 源極電極用抗蝕劑遮罩及汲極電極用抗蝕劑遮罩的遮罩圖 案化工程；和 以前述源極電極用抗蝕劑遮罩及前述汲極電極用抗蝕 劑遮罩作爲遮罩，來蝕刻前述源極、汲極用金屬膜，以形 ' 成源極電極用金屬膜與汲極電極用金屬膜，並且使下層的 ， 電阻接觸用Si膜露出於前述源極電極用金屬膜與前述汲 極電極用金屬膜之間的通道區域用凹部的工程；和 將已圖案形成的前述源極電極用抗鈾劑遮罩及前述汲 極電極用抗蝕劑遮罩進行再顯像處理，而使各個被覆面積 縮小的再顯像處理工程；和 令有機溶劑作用於縮小後的前述源極電極用抗蝕劑遮 罩及前述汲極電極用抗蝕劑遮罩，而令已軟化的軟化抗蝕 劑變形，藉此覆蓋前述源極電極用金屬膜與前述汲極電極 用金屬膜之間的通道區域用凹部內的前述電阻接觸用Si 膜的回流工程；和 以變形後的前述抗蝕劑、前述源極電極用金屬膜及前 述汲極電極用金屬膜作爲遮罩，來飩刻下層之前述電阻接 觸用Si膜及前述a - Si膜的工程；和 除去變形後的前述抗蝕劑，並使前述電阻接觸用Si * 膜再度露出於前述源極電極用金屬膜與前述汲極電極用金 屬膜之間的通道區域用凹部內的工程；和 以前述源極電極用金屬膜與前述汲極電極用金屬膜作 爲遮罩，來蝕刻露出於該些之間的前述通道區域用凹部的 前述電阻接觸用Si膜的工程， -59- 200807499 ⑺ 更包含：在前述回流工程之前，先以促進前述 蝕劑的流動，朝向前述通道區域用凹部內的前述電 用s i膜之方式，對前述基板事先施以表面處理的工 23·如申請專利範圍第22項所記載的液晶顯示 薄膜電晶體元件之製造方法，其中， 藉由界面活性劑施行前述表面處理。 24·如申請專利範圍第23項所記載的液晶顯示 薄膜電晶體元件之製造方法，其中， 更包含：在前述再顯像處理工程之前除去前述 膜之表面變質層的前處理工程；和在該前處理工程 洗淨前述基板的洗淨工程，在前述洗淨工程的洗淨 添加前述界面活性劑，來施行表面處理。 25·如申請專利範圍第24項所記載的液晶顯示 薄膜電晶體元件之製造方法，其中， 在表面處理後的前述再顯像處理工程中，部分 前述抗飩劑膜，且令未被表面處理的表面，露出於 極電極用金屬膜及前述汲極電極用金屬膜。 26·如申請專利範圍第23項所記載的液晶顯示 薄膜電晶體元件之製造方法，其中， 更包含：在前述再顯像處理工程之後，洗淨前 的洗淨工程，且在前述洗淨工程的洗淨液中，添加 面活性劑，來施行表面處理。 27·如申請專利範圍第23項所記載的液晶顯示 薄S旲電晶體兀件之製造方法，其中， 軟化抗 阻接觸 程。 裝置用 裝置用 抗蝕劑 之後， 液中， 裝置用 地除去 前述源 裝置用 述基板 前述界 裝置用 -60- 200807499 (8) 在前述回流工程之前，在含有前述界面活性劑的藥液 環境中，對前述基板施行表面處理。 2 8 ·如申請專利範圍第2 2項至第2 7項之任一項所記 載的液晶顯示裝置用薄膜電晶體元件之製造方法，其中， ' 前述抗蝕劑膜，是爲膜厚因部位而變化，且至少具有 ' 膜厚較厚的厚膜部與對該厚膜部而言，相對上膜厚較薄的 薄膜部的形狀，在前述回流工程中，藉由前述厚膜部與前 述薄膜部的配置，來控制前述軟化抗飩劑之流動方向。 29·如申請專利範圍第22項至第27項之任一項所記 載的液晶顯示裝置用薄膜電晶體元件之製造方法，其中’ 前述抗蝕劑膜，是爲膜厚因部位而變化，且至少具有 膜厚較厚的厚膜部與對該厚膜部而言，相對上膜厚較薄的 薄膜部的形狀，在前述回流工程中，藉由前述厚膜部與前 述薄膜部的配置，來控制藉由前述軟化抗蝕劑之被覆面 積。 3 〇 ·如申請專利範圍第2 8項所記載的液晶顯示裝置用 薄膜電晶體元件之製造方法，其中， 在前述回流工程中，在臨近於前述源極電極用金屬膜 與前述汲極電極用金屬膜之間的前述通道區域用凹部之 ' 側，設置前述厚膜部。 3 1 ·如申請專利範圍第2 8項所記載的液晶顯示裝置用 薄膜電晶體元件之製造方法，其中， 在前述回流工程中，在臨近於前述源極電極用金屬膜 與前述汲極電極用金屬膜之間的前述通道區域用凹部之 -61 - 200807499 (9) 側，設置前述薄膜部。 32·如申請專利範圍第22項至第27項之任一項所記 載的液晶顯示裝置用薄膜電晶體元件之製造方法，其中， 在前述回流工程中，使用前述抗鈾劑膜的端部較前述 源極電極用金屬膜的端部及前述汲極電極用金屬膜的端部 . 更突出於前述通道區域用凹部之突出形狀的抗蝕劑膜。 3 3·如申請專利範圍第22項至第27項之任一項所記 載的液晶顯示裝置用薄膜電晶體元件之製造方法，其中， 在前述回流工程中，使前述抗蝕劑在有機溶劑環境中 變形。 34.如申請專利範圍第22項至第27項之任一項所記 載的液晶顯示裝置用薄膜電晶體元件之製造方法，其中， 藉由使用半遮罩的半曝光處理及其後的顯像處理，來 施行前述遮罩圖案化工程。 3 5 . —種電腦可讀取的記憶媒體，是記憶著在電腦上 動作的控制程式之電腦可讀取的記憶媒體， 前述控制程式，是以在實行時，在處理室內，施行如 申請專利範圍第1項或第2項所記載之回流法的方式來控 ' 制回流處理裝置。 3 6 . —種回流處理裝置，其具備： 具備用來載置被處理體之支撐台的處理室；和 用以對前述處理室內供應有機溶媒的氣體供給手段； 和 控制成在前述處理室內施行申請專利範圍第1項或第 2項所記載之回流法的控制部。 -62-200807499 (1) X. Patent Application No. 1. A reflow method having: an underlayer film; and an exposed region in which the underlayer film is exposed above the lower layer film and a coating layer coated with the underlayer film In the form of a region, the resist film of the patterned resist film is softened and flows by the resist of the resist film, thereby covering a part or all of the exposed region by a reflow method. It is: a process for preliminarily applying a surface treatment to the exposed region to promote the flow of the softened resist. 2. The reflow method according to claim 1, wherein the entire surface of the object to be treated including the exposed region and the coated region is subjected to a surface treatment, and then the resist of the coated region is partially removed. 3. The reflow method as described in claim 1 or 2, wherein the surface treatment is carried out by a surfactant. 4. The reflow method as described in claim 2 or 2, wherein the film thickness varies depending on a portion, and at least has a thick film portion having a thick film thickness; and the thick film portion In other words, a resist film having a shape of a thin film portion having a relatively thin film thickness is used as the anti-uranium film. The reflow method according to claim 4, wherein the flow direction of the softened resist is controlled by the arrangement of the thick film portion and the thin film portion. 6. The reflow method according to claim 4, wherein -54-200807499 (2) controlling the coating by the softened anti-caries agent by the arrangement of the thick film portion and the film portion area. [7] The reflow method according to the first or second aspect of the invention, wherein the end portion of the film directly below the anti-uranium film is protruded upward from the exposed region. A resist film having a shape is used as the resist film. 8. The reflow method according to claim i or item 2, wherein the resist is deformed in an organic solvent environment. The reflow method according to claim 1 or 2, wherein the patterning of the anti-caries film is carried out by a half exposure process using a half mask and subsequent development processing. 10. A pattern forming method comprising: forming a resist film forming a resist film on top of an etched film of a processed object; and masking a patterning process of forming the uranium-impermeable film And a re-development process in which the resist film formed by the pattern is further subjected to development processing to reduce the coating area; and the resist of the resist film is softened and deformed, and the aforementioned a reflow process of the target region of the uranium engraved film; and a first etching process for etching the exposed region of the etched film by using the deformed resist as a mask; and -55-200807499 (3) The second etching process for etching the target region of the etched film which is exposed by removing the deformed resist further includes: before the reflow process, In order to promote the flow of the softened resist to the target region of the etched film, the surface of the object to be processed is subjected to a surface treatment in advance. The pattern forming method according to the first aspect of the invention, wherein the surface treatment is performed by a surfactant. 1. The pattern forming method according to claim 1, further comprising: a pretreatment process for removing the surface deterioration layer of the resist film before the re-development processing; and before After the treatment, the cleaning process of the object to be processed is washed, and the surfactant is added to the cleaning liquid of the cleaning process to perform surface treatment. The pattern forming method according to claim 12, wherein in the re-image processing after the surface treatment, the resist film is partially removed, and the lower layer not subjected to surface treatment is exposed. Membrane surface. The pattern forming method according to the above aspect of the invention, further comprising: washing the object to be treated after the re-image processing, and in the cleaning process The surfactant was added to the cleaning solution to carry out a surface treatment. The method for forming a pattern according to the first aspect of the invention, wherein the object to be treated is carried out in a liquid medicine environment containing the surfactant before the reflowing process. Surface treatment. The pattern forming method according to any one of the first aspect, wherein the resist film has a film thickness varying by a portion and has at least a film thickness. In the thick thick film portion and the thick film portion, the shape of the thin film portion having a relatively thin film thickness is controlled by the arrangement of the thick film portion and the thin film portion in the reflow process. The flow direction of the etchant. The pattern forming method according to any one of the items of the present invention, wherein the film thickness varies depending on a portion, and at least has a film thickness. The thick thick film portion and the shape of the thin film portion having a relatively thin film thickness in the thick film portion are controlled by the arrangement of the thick film portion and the thin film portion in the reflow process. Soften the coverage area of the resist. The pattern forming method according to any one of the items of the present invention, wherein the end portion of the film is directly below the anti-caries film by using the end portion thereof. A resist film having a shape protruding upward from the target region is used as the resist film. The method of forming a pattern according to any one of the above-mentioned claims, wherein the resist is organic in the reflow process described above. Deformed in a solvent environment. 2 0. A method of forming a pattern as described in any one of the claims 1 to 5, wherein * by using a half-mask half exposure process and subsequent development processing, To perform the aforementioned mask patterning project. The pattern forming method according to any one of the invention, wherein the object to be processed is a gate line and a gate electrode formed on the substrate, and is formed to cover the surface. Further, on the gate insulating film, a gate structure of the a-S i film, the S i film for resistance contact, and a metal film for the source and the drain is formed in the gate insulating film, and The film to be etched is the aforementioned Si film for electric resistance contact. A method of manufacturing a thin film transistor device for a liquid crystal display device, comprising: forming a gate line and a gate electrode on a substrate; and forming a gate insulating film covering the gate line and the gate electrode Engineering; and 'on the gate insulating film, sequentially stacking a-S i film, S i film for resistive contact, and metal film for source and drain; and the source and drain A process for forming an anti-uranium film on a metal film; and performing a half exposure process and a development process on the anti-uranium film to form - 58-200807499 (6) Resist mask and drain electrode for source electrode a mask patterning process using a resist mask; and etching the source and drain metal with the resist mask for the source electrode and the resist mask for the drain electrode as a mask The film is formed into a metal film for a source electrode and a metal film for a drain electrode, and a lower Si film for electrical resistance contact is exposed between the metal film for a source electrode and the metal film for a drain electrode. Engineering of recesses in the passage area; and The patterned source electrode is subjected to a re-development process using an anti-uranium agent mask and a resist mask for the above-described drain electrode, and a re-development process for reducing the coverage area; and an organic solvent is applied to The reduced source electrode electrode mask and the drain electrode resist are masked, and the softened soft resist is deformed to cover the source electrode metal film and the drain electrode a reflow process of the Si film for resistive contact in the recess portion of the channel region between the metal films for electrodes; and the resist, the metal film for the source electrode, and the metal film for the gate electrode as the mask a cover for engraving the underlying resistive contact Si film and the a-Si film; and removing the deformed resist and exposing the resistive contact Si* film to the source electrode metal again a process in the recess for the passage region between the film and the metal film for the drain electrode; and the metal film for the source electrode and the metal film for the drain electrode are used as a mask to be exposed and exposed Further, in the above-mentioned reflow process, the flow of the etchant is promoted to face the aforementioned passage region recess portion before the reflow process. A method for producing a liquid crystal display thin film transistor device according to the invention of claim 22, wherein the surface treatment is performed by a surfactant, and the surface treatment is performed by a surfactant. . The method for producing a liquid crystal display thin film transistor according to claim 23, further comprising: a pretreatment process for removing the surface alteration layer of the film before the re-development processing; and The pretreatment process washes the cleaning process of the substrate, and the surface active agent is added to the cleaning of the cleaning process to perform surface treatment. The method for producing a liquid crystal display thin film transistor according to claim 24, wherein in the re-image processing after the surface treatment, part of the anti-caries film is not surface-treated. The surface is exposed to the metal film for the electrode electrode and the metal film for the gate electrode. The method for producing a liquid crystal display thin film transistor according to claim 23, further comprising: after the re-development processing, the cleaning process before the cleaning, and in the cleaning process In the cleaning solution, a surfactant is added to perform surface treatment. The method for producing a liquid crystal display thin S旲 transistor according to the invention of claim 23, wherein the resistive contact is softened. After the device is used as a resist for the device, the substrate for the device is removed from the device, and the substrate for the device is removed. -60-200807499 (8) Before the reflow process, in the environment containing the surfactant, The substrate is subjected to a surface treatment. The method for producing a thin film transistor device for a liquid crystal display device according to any one of the above-mentioned claims, wherein the resist film is a film thickness portion And changing at least the thick film portion having a thick film thickness and the shape of the thin film portion having a relatively thin film thickness for the thick film portion, and the thick film portion and the aforementioned The arrangement of the film portions controls the flow direction of the softening anti-caries agent. The method for producing a thin film transistor device for a liquid crystal display device according to any one of the invention, wherein the resist film is changed in thickness depending on a portion, and At least a thick film portion having a thick film thickness and a shape of a thin film portion having a relatively thin film thickness for the thick film portion are disposed by the thick film portion and the thin film portion in the reflow process. To control the coated area by the aforementioned softening resist. The method for producing a thin film transistor device for a liquid crystal display device according to the second aspect of the invention, wherein the metal film for a source electrode and the gate electrode are adjacent to the reflow process The thick film portion is provided on the side of the concave portion for the passage region between the metal films. The method for producing a thin film transistor device for a liquid crystal display device according to the second aspect of the invention, wherein the metal film for a source electrode and the gate electrode are adjacent to the reflow process The aforementioned film portion between the metal films is provided on the side of the -61 - 200807499 (9) recess of the recessed portion. The method for producing a thin film transistor device for a liquid crystal display device according to any one of claims 22 to 27, wherein in the reflowing process, the end portion of the anti-uranium film is used. The end portion of the metal film for the source electrode and the end portion of the metal film for the gate electrode further protrude from the resist film of the protruding portion of the channel region. The method for producing a thin film transistor device for a liquid crystal display device according to any one of claims 22 to 27, wherein the resist is in an organic solvent environment in the reflow process. Medium deformation. The method for producing a thin film transistor device for a liquid crystal display device according to any one of claims 22 to 27, wherein the half exposure process using the half mask and the subsequent image formation are used. Processing to perform the aforementioned mask patterning process. 3 5 . A computer-readable memory medium is a computer-readable memory medium that memorizes a control program that operates on a computer. The control program is implemented in the processing room, such as applying for a patent. The reflow method is controlled by the method of the reflow method described in the first or second item. a reflow processing apparatus comprising: a processing chamber provided with a support table on which the object to be processed is placed; and a gas supply means for supplying an organic solvent to the processing chamber; and controlling to be performed in the processing chamber The control unit of the reflow method described in the first or second aspect of the patent application. -62-
TW096111313A 2006-03-31 2007-03-30 Reflow method, pattern forming method and production method of tft element for liquid crystal display TWI345805B (en)

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