201044440 六、發明說明 【發明所屬之技術領域】 本發明是有關例如半導體晶圓或液晶玻璃基板 基板）等的顯像處理方法及顯像處理裝置。 【先前技術】 一般在半導體裝置的製造中，爲了例如在半導體 0 或FPD基板等（以下稱爲晶圓等）塗佈阻劑液，將遮罩 予以曝光處理，形成電路圖案，而利用光蝕刻 (Photolithography)技術。在此光蝕刻微影技術中，是 旋轉塗佈法來對晶圓等塗佈阻劑液，使藉此形成的阻 . 按照所定的電路圖案來曝光，將此曝光圖案予以顯 • 理，而於阻劑膜形成電路圖案。 在如此的光蝕刻微影工程中，隨著近年來裝置圖 微細化、薄膜化，而裝置圖案的瘦身技術或提高曝光 〇 析度的要求曰益變高。提高曝光的解析度的方法之一 對盛於晶圓表面的顯像液的表面噴上被溫度調整的氣 而使顯像液的溫度形成最適溫度的方法爲人所知（例 照專利文獻1)。 並且，就以往的顯像處理裝置而言，有一邊使水 持晶圓的基板保持部繞著鉛直軸旋轉，一邊使顯像液 噴嘴移動於從晶圓的外周緣側往中心部的半徑方向， 在晶圓的表面螺旋狀地盛上顯像液，實施顯像處理者 所知（例如參照專利文獻2)。[Technical Field] The present invention relates to a development processing method and a development processing apparatus for, for example, a semiconductor wafer or a liquid crystal glass substrate. [Prior Art] Generally, in the manufacture of a semiconductor device, for example, a resist liquid is applied to a semiconductor 0 or an FPD substrate (hereinafter referred to as a wafer or the like), and the mask is exposed to light to form a circuit pattern, and photolithography is utilized. (Photolithography) technology. In the photolithography lithography technique, a spin coating method is applied to apply a resist liquid to a wafer or the like to form a resist. The exposure pattern is exposed according to a predetermined circuit pattern, and the exposure pattern is visualized. A circuit pattern is formed on the resist film. In such a photo-etching lithography project, as the device pattern is refined and thinned in recent years, the slimming technique of the device pattern or the requirement for improving the exposure spectroscopy becomes high. One of the methods for increasing the resolution of exposure is to apply a temperature-adjusted gas to the surface of the developing liquid on the surface of the wafer to form an optimum temperature for the temperature of the developing liquid (for example, Patent Document 1) ). Further, in the conventional development processing apparatus, the liquid crystal holding nozzle is rotated about the vertical axis while the liquid crystal holding nozzle is moved in the radial direction from the outer peripheral side to the center of the wafer. The developer liquid is spirally placed on the surface of the wafer, and is known to the developer (for example, see Patent Document 2).
(FPD 晶圓 圖案 微影 藉由 劑膜 像處 案的 的解 ，有 體， 如參 平保 供給 藉此 爲人 -5- 201044440 [先行技術文獻] [專利文獻] [專利文獻1 ]特開平2 - 4 6 4 6 5號公報（申請專利範圍， 第1圖） [專利文獻2]特開20〇5-2 1 0059號公報（申請專利範 圍，圖6) 【發明內容】 (發明所欲解決的課題） 然而’在專利文獻1記載的技術中，是在晶圓等的表 面盛上顯像液之後，藉由氣體吹出噴嘴在顯像液的表面噴 上被溫度調整的氣體之技術，因此在顯像液的供給與氣體 的噴出之間產生時間差，會有顯像液的溫度調整之解析性 未能充分取得的問題。 並且，在專利文獻2記載的技術中，是一邊使顯像液 供給噴嘴移動於從晶圓的外周緣側往中心部的半徑方向， 一邊盛上顯像液，因此被盛於晶圓表面的顯像液會在噴嘴 移動方向的後方側產生盛液的下襬部，在該下襬部中因爲 接觸於晶圓表面的電路圖案的顯像液的量少，所以會有解 析性未能夠充分取得的擔憂。特別是在EUV(Extfeme Ultra Violet)阻劑中，因爲利用波長爲13〜Mnm極短的 軟X線，所以解析性未能充分取得。 本發明是有鑑於上述情事而硏發者’其目的是在於提 供一種促使被供給至基板的表面而盛上之顯像液的盛液的 -6- 201044440 ' 下襬部活化’得以謀求解析性的提升及顯像處理效率的提 升之顯像處理方法及顯像處理裝置。 (用以解決課題的手段） 爲了解決上述課題，本發明的顯像處理方法，係於表 面塗佈阻劑’對被曝光後的基板表面供給顯像液而進行顯 像之顯像處理方法，其特徵爲： 0 —邊使水平保持基板的基板保持部繞著錯直軸旋轉， 一邊從基板的中心部上方由顯像液供給噴嘴來供給顯像液 而盛上的同時，由氣體供給噴嘴來朝所被供給之顯像液的 盛液的下襬部供給比處理時的基板溫度還要高溫的氣體， . 使上述顯像液供給噴嘴及氣體供給噴嘴從基板的中心 - 部往基板的外周緣，於徑方向同時且使氣體供給噴嘴追隨 顯像液供給噴嘴移動而進行顯像處理。（請求項〗）。 本發明的顯像處理裝置是使請求項1記載的顯像處理 Q 方法具體化者’以在表面塗佈阻劑，對被曝光後的基板表 面供給顯像液而進行顯像之顯像處理裝置爲前提，其特徵 係具備： 基板保持部，其係水平保持基板； 旋轉驅動機構，其係使上述基板保持部繞著鉛直軸旋 轉； 顯像液供給噴嘴，其係對被保持於上述基板保持部的 . 基板表面供給顯像液； 氣體供給噴嘴，其係朝被供給至上述基板的表面之顯 201044440 像液的盛液的下襬部供給氣體； 溫度調整部，其係將從氣體供給源供給至上述氣體供 給噴嘴的氣體溫度調整成比處理時的基板溫度還要高溫； 移動機構，其係使上述顯像液供給噴嘴及氣體供給噴 嘴從基板的中心往外周緣側移動； 可調整氣體流量的閥機構，其係設於連接上述氣體供 給源與氣體供給噴嘴的氣體供給管路；及 控制手段，其係控制上述旋轉驅動機構、溫度調整 部、移動機構及閥機構， 並且，根據來自上述控制手段的控制信號，從繞著鉛 直軸旋轉的基板的中心部上方由顯像液供給噴嘴來供給顯 像液而盛上的同時，一邊由氣體供給噴嘴來朝該顯像液的 盛液的下襬部供給比處理時的基板溫度還要高溫的氣體， 一邊使上述顯像液供給噴嘴及氣體供給噴嘴從基板的中心 部往基板的外周緣，於徑方向使氣體供給噴嘴追隨顯像液 供給噴嘴移動而進行顯像處理。（請求項4 )。 在此發明中，上述氣體可使用非活性氣體例如氮（N2) 氣體（請求項2 ’ 5)。 又，請求項3記載的發明是在請求項1或2記載的顯 像處理方法中’按照進行顯像處理的基板上的阻劑種類來 控制藉由上述基板保持部所保持的基板的旋轉數、顯像液 供給噴嘴及氣體供給噴嘴的移動速度、氣體的吐出量及氣 體的溫度。 又，請求項6記載的顯像處理裝置是在請求項4或5 -8 - 201044440 記載的顯像處理裝置中，上述控制手段係記憶對應於進行 顯像處理的基板上的阻劑種類之顯像液的溶解溫度，根據 依照該被記憶的資料之控制信號來控制藉由上述基板保持 部所保持的基板的旋轉數、顯像液供給噴嘴及氣體供給噴 嘴的移動速度、氣體的吐出量及氣體的溫度。 (1) 若根據請求項1，2，4，5記載的發明，則可從繞 著鉛直軸旋轉的基板的中心部上方由顯像液供給噴嘴來供 0 給顯像液而盛液的同時，一邊由氣體供給噴嘴來朝該顯像 液的盛液的下襬部供給比處理時的基板溫度還要高溫的氣 體，一邊使顯像液供給噴嘴及氣體供給噴嘴從基板的中心 部往基板的外周緣，於徑方向使氣體供給噴嘴追隨顯像液 . 供給噴嘴移動，藉此比基板的溫度還要高溫的氣體會被供 • 給至所被盛上之顯像液的下襬部，因此顯像液會溶解而均 一地接觸於基板表面的電路圖案，實施顯像處理。 (2) 若根據請求項3，6記載的發明，則可按照進行顯 Q 像處理的基板上的阻劑種類來控制藉由基板保持部所保持 的基板的旋轉數、顯像液供給噴嘴及氣體供給噴嘴的移動 速度、氣體的吐出量及氣體的溫度，藉此除了上述（1)以 外，可使顯像液更均一地接觸於基板表面的電路圖案來實 施顯像處理。 [發明的效果] . 若根據此發明，則因爲如上述般構成，所以可取得以 . 下那樣的效果。 -9 - 201044440 (1) 若根據請求項1，2，4，5記載的發明，則在對被 盛上的顯像液的下襬部供給比基板的溫度還要高溫的氣體 之下，因爲顯像液會溶解而均一地接觸於基板表面的電路 圖案來實施顯像處理，所以盛液的下襬部的顯像液會活化 而能夠謀求顯像處理效率的提升。 (2) 若根據請求項3，6記載的發明，則可按照進行顯 像處理的基板上的阻劑種類來控制藉由基板保持部所保持 的基板的旋轉數、顯像液供給噴嘴及氣體供給噴嘴的移動 速度、氣體的吐出量及氣體的溫度，藉此可使顯像液更均 一地接觸於基板表面的電路圖案來實施顯像處理，因此除 了上述（1)以外可更謀求顯像處理效率的提升。 【實施方式】 以下’根據圖面來說明有關本發明的最佳形態。在 此，說明有關將本發明的顯像處理裝置適用於塗佈.顯像 處理裝置的情況。 如圖1及圖2所示，上述處理系統具備： 載體站1 ’其係用以搬出入密閉收納複數片例如2 5 片被處理基板的半導體晶圓w(以下稱爲晶圓w)的載體 10 ; 處理部2 ’其係用以對從此載體站1取出的晶圓w施 以阻劑塗佈，顯像處理等； 曝光部4’其係在晶圓w的表面形成透過光的液層之 狀態下將晶圓w的表面浸液曝光；及 •10- 201044440 介面部3，其係連接於處理部2與曝光部4之間，進 行晶圓W的交接。 載體站1是設有：可排列載置複數個載體10的載置 部π、及由此載置部1 1來看設於前方壁面的開閉部1 2、 及用以經由開閉部1 2來從載體1 0取出晶圓W的交接手 段A1。 介面部3是以前後設於處理部2與曝光部4之間的第 0 1搬送室3A及第2搬送室3B所構成，分別設有第1晶圓 搬送部30A及第2晶圓搬送部30B。 並且，在載體站1的裡側連接以框體20來包圍周圍 的處理部2，在此處理部2從前側依序交替配列設置有使 , 加熱·冷卻系的單元多段化的棚架單元u 1，U2，U3及進 . 行液處理單元U4，U5的各單元間的晶圓W的交接之主搬 送手段A2，A3。並且，主搬送手段A2，A3是被配置於 藉由區劃壁21所包圍的空間內，該區劃壁2 1是以從載體 Q 站1來看配置於前後方向的棚架單元U1，U2 ’ U3側的一 面部、及後述之例如右側的液處理單元U4 ’ U5側的一面 部、及成左側的一面的背面部所構成。而且’在載體站1 與處理部2之間’處理部2與介面部3之間配置有溫溼度 調節單元22，該溫溼度調節單元22係具備使用於各單元 的處理液的溫度調節裝置或溫溼度調節用的管路等。 棚架單元U1，U2，U3是將用以進行在液處理單元 U4，U5所進行的處理的前處理及後處理的各種單兀層疊 . 成複數段例如1 〇段的構成’其組合是含有加熱（烘烤）晶 -11 - 201044440 圓W的加熱單元（HP)、冷卻晶圓W的冷卻單元（CP L)等。 又，液處理單元U 4，U 5是例如圖2所示’將在阻劑或顯 像液等的藥液收納部之上塗佈反射防止膜的底部反射防止 膜塗佈單元（BCT)23，塗佈單元（COT)24、對晶圓W供給 顯像液而進行顯像處理的顯像單元（DEV)25等層疊成複數 段例如5段所構成。本發明的顯像處理裝置5 0是設於顯 像單元（DEV)25。 上述顯像處理裝置50是如圖3及圖4所示’在具有 晶圓W的搬出入口 5 1 a的外箱5 1內具備構成基板保持部 的旋轉夾頭4 0 ’其係吸引吸附晶圓W的背面側中央部而 保持於水平。另外’在搬出入口 5 1 a可開閉地配設有遮門 5 lb ° 上述旋轉夾頭4 0是經由軸部4 1來連結至例如伺服馬 達等的旋轉驅動機構42 ’藉由此旋轉驅動機構42在保持 晶圓W的狀態下構成可旋轉。另外，旋轉驅動機構42是 電性連接至控制手段的控制器6 0 ’可根據來自控制器6 0 的控制信號來控制旋轉夾頭4 0的旋轉數。 並且，以能夠包圍被保持於旋轉夾頭40的晶圓W的 側方之方式設有杯43。此杯43是由圓筒狀的外杯43a、 及上部側往內側傾斜的筒狀的內杯4 3 b所構成’藉由被連 接至外杯43 a的下端部之例如汽缸等的昇降機構44來使 外杯4 3 a昇降，且內杯4 3是構成可被形成於外杯4 3 a的 下端側內周面的階部所推起而昇降。另外’昇降機構44 是被電性連接至控制器60 ’構成可根據來自控制器6(3的 -12- 201044440 ' 控制信號來使外杯43a昇降。 而且，在旋轉夾頭40的下方側設有圓形板45 ’在此 圓形板45的外側，剖面爲形成凹部狀的液收部46會沿著 全周設置。在液收部46的底面形成有排水管排出口 47 ’ 從晶圓W灑落或甩開而積存於液收部46的顯像液或清洗 液會經由此排水管排出口 4 7來排出至裝置的外部。並 且，在圓形板45的外側設有剖面山形的環構件48。另 ^ 外，雖圖示省略，但實際設有貫通圓形板45例如3根的 基板支撐銷的昇降銷，藉由此昇降銷與未圖示的基板搬送 手段的互相作用，可使晶圓W交接於旋轉夾頭4 0。 另一方面，在被保持於旋轉夾頭40的晶圓W的上方 側，以能夠隔著間隙來與晶圓W的表面的中央部形成對 . 向的方式設有可昇降及水平移動的顯像液供給噴嘴52(以 下稱爲顯像噴嘴52)、及與此顯像噴嘴52的晶圓中心側 並行鄰接之成爲氣體供給噴嘴的氮（N2)氣體供給噴嘴 Q 53(以下稱爲N2噴嘴53)。 此情況，顯像噴嘴52是具有帶狀地供給（吐出）顯像 液的狹縫狀的吐出口（未圖示）。此吐出口是例如配置成其 長度方向會從晶圓W的中心部往外周部。另外，吐出口 不只是沿著從晶圓W的中心部往外周部的直線（半徑）來延 伸時，亦可對此直線使稍微地具有角度來使交叉。並且， N2噴嘴53是具有朝由顯像噴嘴52來供給（吐出）至晶圓W 上的顯像液D的盛液D 1的下襬部D2供給（噴射）n2氣體 的狹縫狀的吐出口（未圖示）（參照圖5(a))。此N2噴嘴53 201044440 的吐出口是例如配置其長度方向會從晶圓W的中心部往 外周部。另外，N2噴嘴5 3的吐出口不只是沿著從晶圓W 的中心部往外周部的直線（半徑）來延伸時，亦可與顯像噴 嘴52皆對此直線使稍微地具有角度來使交叉。另外，顯 像噴嘴52的吐出口並非一定是狹縫狀，亦可爲圓形狀的 吐出口。 如上述般在彼此鄰接的狀態下被一體化的顯像噴嘴 52與N2噴嘴53是被噴嘴臂54A的一端側所支持，此噴 嘴臂5 4 A的另一端側是與具備未圖示的昇降機構的移動 基台55A連結，且移動基台55A是構成可例如以滾珠螺 桿或時規皮帶（Timing Belt)等的噴嘴移動機構56A來沿著 延伸於X方向的引導構件57A移動於橫方向。藉由如此 構成來驅動噴嘴移動機構5 6 A，藉此顯像噴嘴5 2與N2噴 嘴5 3可沿著從晶圓W的中心部往外周部的直線（半徑）移 動。 另外，在杯43的一方的外方側設有顯像噴嘴52的待 機部59A，在此待機部59A進行顯像噴嘴52的噴嘴前端 部的洗淨等。 並且，在被保持於旋轉夾頭40的晶圓W的上方側， 以能夠隔著間隙來與晶圓W的表面的中央部成對向的方 式，可昇降及水平移動地設有供給（吐出）洗淨液的清洗液 例如純水的清洗噴嘴5 8。 此清洗噴嘴58是在噴嘴臂S4B的一端側被保持於彼 此平行狀態，此噴嘴臂54B的另一端側是與具備未圖示的 -14 - 201044440 . 昇降機構的移動基台55B連結，且移動基台55B是構 可例如以滾珠螺桿或時規皮帶等的噴嘴移動機構56B來 著延伸於X方向的引導構件57B移動於橫方向，亦即 從晶圓 W的中心部往基板的外周緣移動於徑方向。 外，在杯43的一方的外方側設有清洗噴嘴5 8的待機 59B ° 又，顯像噴嘴5 2是經由設有開閉閥V1的顯像液 q 給管70來連接至顯像液供給源7 1。此情況，在顯像液 給管70的顯像噴嘴52側設有由二重管72a及熱交換 7 2b所構成的溫度調整部72，以顯像液能夠形成所定溫 之方式進行溫度調整。另一方面，N2噴嘴53是經由設 可流量調整的控制閥V0的N2氣體供給管73來連接至 氣體供給源74。此情況，在N2氣體供給管73設有N2 體溫度調整部75，以使N2氣體能夠比所定溫度亦即處 時的晶圓W的溫度還要高溫例如3 0〜5 0 °C的方式進行 Q 度調整。 又，清洗噴嘴5 8是在連接清洗噴嘴5 8與洗淨液供 源亦即純水供給源77之純水供給管76設有開閉閥V2。 另外，上述噴嘴移動機構56A，56B、開閉閥VI V2、控制閥V0、溫度調整部72及N2氣體溫度調整部 是分別被電性連接至上述控制器60，構成可根據預先 記憶於控制器60的控制信號來進行顯像噴嘴52的水平 動、清洗噴嘴58的水平移動、開閉閥V1，V2，控制 V0的開閉驅動、顯像液及N2氣體的溫度調整。此情況 成 沿 可 另 部 供 供 器 度 有 N2 氣 理 溫 給 7 5 被 移 閥 -15- 201044440 顯像液的溫度及N2氣體的溫度是按照阻劑的種類來設定 於所定溫度。亦即，顯像液及N2氣體的溫度是按照每種 阻劑對顯像液的溶解特性來控制顯像液的溫度。 在此，舉一例有關對應於阻劑的種類之顯像液的溫度 設定値，例如KrF光源用的阻劑，對顯像液溶解性低的阻 劑種類時，是將顯像液的溫度設定値設定成高例如40〜 6〇°C。又，例如ArF光源用的阻劑，對顯像液溶解性高的 咀劑種類時，是將顯像液的溫度設定値設定成低例如20 〜4 0 °C。又，如I線，G線等的光源用阻劑那樣，在低溫 下溶解性會被促進的阻劑時，是將溫度設定値設定成例如 1 〇〜20°C。又，將EUV阻劑時的顯像液的溫度設定値設 定成10〜30 °C。另一方面，N2氣體的溫度是與上述顯像 液的溫度同樣，設定成比處理時的晶圓W的溫度還要高 溫。 其次，說明有關上述那樣構成的顯像處理裝置50的 動作形態。首先，驅動噴嘴移動機構5 6 A來將顯像噴嘴 52及N2噴嘴53移動至晶圓表面的中心部上方位置，如 圖5及圖6所示，藉由顯像噴嘴52來對利用旋轉驅動機 構42的驅動而以低速例如5 〇rpm旋轉的晶圓W的表面供 給（吐出）顯像液的同時，朝顯像液的盛液D 1的下襬部d 2 供給（噴射）比被設定於所定溫度的晶圓w的溫度還要高溫 的N 2氣體之狀態下，使顯像噴嘴5 2及N2噴嘴5 3沿著從 晶圓W的中心部往外周緣部的直線（半徑）移動而進行顯像 處理。藉由如此使N2噴嘴53追隨顯像噴嘴52而進行顯 -16- 201044440 • 像，如圖5(a)所示，因爲在由顯像噴嘴52來供給（吐出） 至晶圓W的表面之顯像液D的盛液D 1的晶圓中心側的下 襬部D2，由N2噴嘴53來供給（噴射）比晶圓W還要高溫 的N2氣體，所以如圖5(b)所示，下襬部D2的少量的顯 像液會被溶解而均一地接觸於晶圓W的表面所形成的電 路圖案P，實施顯像處理。 此顯像處理後，驅動噴嘴移動機構56B來將清洗噴嘴 0 5 8移動至晶圓表面的中心部上方位置，由清洗噴嘴5 8來 供給（吐出）清洗液亦即純水至旋轉的晶圓W的表面。藉此 利用由清洗噴嘴5 8所供給（吐出）的純水D IW來沖洗晶圓 表面之含阻劑溶解成分的顯像液。然後，藉由旋轉驅動機 構42的驅動來進行旋轉乾燥處理，亦即使晶圓W高速旋 轉，例如將旋轉數設爲2000rpm來甩掉晶圓表面的液體。 其次，一邊參照圖1及圖2 —邊簡單說明有關利用上 述塗佈·顯像裝置來處理晶圓W的程序。在此，是說明有 Q 關在晶圓W的表面形成底部反射防止膜（B ARC)，且在其 上層塗佈無上方塗層阻劑的情況。首先，一旦例如收納 25片的晶圓W之載體10被載置於載置部11，則載體1〇 的蓋體會與開閉部1 2 —起解開，藉由交接手段A 1來取 出晶圓W。然後，晶圓W會經由構成棚架單元U1的一段 之交接單元（未圖示）來交接至主搬送手段A2，作爲塗佈 處理的前處理例如在單元（BCT)23於其表面形成底部反射 防止膜（BARC)。然後，藉由主搬送手段A2來搬送至構成 棚架單元U 1〜U3之一的棚架的加熱處理部，進行預烘烤 -17- 201044440 (C LHP)，更在冷卻後，藉由主搬送手段A2來將晶圓W搬 入塗佈單元（C〇T)24內，在晶圓W的表面全體薄膜狀地 塗佈無上方塗層阻劑。然後’藉由主搬送手段A2來搬送 至構成棚架單元U1〜U3之一的棚架的加熱處理部’進行 預烘烤（CLHP)，更在冷卻後，經由棚架單元U3的交接單 元來搬送至介面部3。在此介面部3’藉由第1搬送室3A 及第2搬送室3B的第1晶圓搬送部30A及第2晶圓搬送 部3 0B來搬送至曝光部4，以能夠和晶圓W的表面成對 向的方式配置曝光手段（未圖示）來進行曝光。完成曝光的 晶圓W是以相反的路徑來搬送至主搬送手段A3，搬入顯 像單元（DEV)25。被搬入顯像單元（DEV)25的晶圓W是藉 由顯像處理裝置5 0，如上述般，在晶圓W的表面由顯像 噴嘴5 2來供給（吐出）顯像液的同時，朝顯像液之盛液D 1 的下襬部D2供給（噴射）比被設定於所定溫度的晶圓W的 溫度還要高溫的N 2氣體之狀態下，使N 2噴嘴5 3追隨顯 像噴嘴5 2沿著從晶圓W的中心部往外周緣部的直線（半 徑）移動’進行顯像處理後，將清洗噴嘴5 8移動至晶圓表 面的中心部上方位置，由清洗噴嘴58來供給（吐出）純水 於旋轉的晶圓W表面’實施洗淨處理，然後使晶圓W高 速旋轉而乾燥。 然後’晶圓W會藉由主搬送手段A 3來從顯像單元 (DEV)25搬出，經由主搬送手段A2、交接手段A1來回到 載置部11上的原來的載體1〇，完成一連串的塗佈.顯像 處理。 -18 - 201044440 ' 另外’上述實施形態是說明有關在晶圓W的表面形 成底部反射防止膜（BARC)，且在其表面形成阻劑層時， 但即使在無底部反射防止膜（BARC)時也可取得與上述實 施形態同樣的效果。此情況的處理程序是依阻劑塗佈工程 θ預烘烤工程—浸液曝光工程-»·後曝光烘烤工程θ顯像工 程（顯像處理—洗淨·乾燥處理）的順序來處理。 【圖式簡單說明】 Ο 圖1是表示在適用本發明的顯像處理裝置的塗佈.顯 像處理裝置連接曝光處理裝置的處理系統的全體槪略平面 圖。 圖2是上述處理系統的槪略立體圖。 圖3是表示本發明的顯像處理裝置的槪略剖面圖。 圖4是上述顯像處理裝置的槪略平面圖。 圖5是表示本發明的顯像處理的狀態剖面圖（a)及擴 Q 大剖面圖（b)。 圖6是表示本發明的顯像處理的狀態槪略平面圖。 【主要元件符號說明】 W :半導體晶圓（基板） 40 :旋轉夾頭（基板保持部） 42 :旋轉驅動機構 50 :顯像處理裝置 52 :顯像噴嘴（顯像液供給噴嘴） -19- 201044440 53 : N2噴嘴（氣體供給噴嘴） 56A :噴嘴移動機構 60 :控制器（控制手段） 75 : N2氣體溫度調整部 V0 :控制閥（閥機構） D :顯像液 D 1 :盛液 D2 :下襬部 -20-(FPD wafer pattern lithography is solved by the film of the film, and there is a body, such as the ginseng guarantee supply by this -5 - 201044440 [prior technical literature] [patent literature] [patent literature 1] special Kaiping 2 - 4 6 4 6 (Publication Scope, Fig. 1) [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei 20-5-2 0 0 (Patent Application, FIG. 6) [Description of Invention] However, the technique described in Patent Document 1 is a technique in which a temperature-adjusted gas is sprayed onto the surface of a developing liquid by a gas blowing nozzle after a developing liquid is placed on a surface of a wafer or the like. Therefore, a time difference occurs between the supply of the developing liquid and the discharge of the gas, and the resolution of the temperature adjustment of the developing liquid is not sufficiently obtained. Further, in the technique described in Patent Document 2, the image is displayed. The liquid supply nozzle moves in the radial direction from the outer peripheral side of the wafer to the center portion, and the developer liquid is held thereon. Therefore, the developing liquid held on the surface of the wafer generates a liquid hem at the rear side in the nozzle moving direction. Department, in the hem, because of contact Since the amount of the developing liquid of the circuit pattern on the surface of the wafer is small, there is a concern that the resolution cannot be sufficiently obtained. Especially in the EUV (Extfeme Ultra Violet) resist, the ultra-short softness is used at a wavelength of 13 to Mnm. X-ray, the resolution is not sufficiently obtained. The present invention has been made in view of the above circumstances, and the object thereof is to provide a liquid-containing liquid for promoting the liquid to be supplied to the surface of the substrate. 201044440 'The hem portion activation' is a development method and a development processing device for improving the resolution and improving the image processing efficiency. (Means for Solving the Problem) In order to solve the above problems, the development processing method of the present invention A surface coating resisting agent is a method of developing a developing image by supplying a developing liquid to a surface of an exposed substrate, and is characterized in that: 0—the substrate holding portion of the horizontal holding substrate is wound around a wrong axis Rotating, while supplying the developing liquid from the developing liquid supply nozzle from the center of the substrate, the gas supply nozzle is supplied to the hem portion of the liquid to be supplied a gas having a high temperature at the substrate temperature during the treatment, and the developing liquid supply nozzle and the gas supply nozzle are simultaneously moved from the center portion of the substrate to the outer peripheral edge of the substrate in the radial direction, and the gas supply nozzle follows the developing liquid supply nozzle The developing process of the present invention is performed by applying the development process described in the claim 1 to the surface of the exposed substrate. A development processing apparatus for developing a developing solution on a surface thereof is characterized in that: a substrate holding portion that horizontally holds the substrate; and a rotation driving mechanism that rotates the substrate holding portion about a vertical axis; The liquid supply nozzle supplies a developing liquid to the surface of the substrate held by the substrate holding portion, and the gas supply nozzle supplies the hem portion of the liquid containing the liquid to the surface of the substrate. a temperature adjustment unit that adjusts a temperature of a gas supplied from the gas supply source to the gas supply nozzle to be higher than a substrate temperature during processing; a moving mechanism that moves the developing liquid supply nozzle and the gas supply nozzle from the center of the substrate to the outer peripheral side; and a valve mechanism that adjusts a gas flow rate, and is provided to a gas supply that connects the gas supply source and the gas supply nozzle a conduit; and a control means for controlling the rotation drive mechanism, the temperature adjustment unit, the movement mechanism, and the valve mechanism, and displaying a control signal from the control means from above a center portion of the substrate that rotates about a vertical axis While the liquid supply nozzle is supplied with the developer liquid, the gas supply nozzle supplies the gas at a temperature higher than the substrate temperature during the processing to the hem portion of the liquid of the development liquid, and the development is performed. The liquid supply nozzle and the gas supply nozzle move from the central portion of the substrate to the outer peripheral edge of the substrate, and the gas supply nozzle moves in the radial direction following the development liquid supply nozzle to perform development processing. (Request item 4). In the invention, the above gas may use an inert gas such as nitrogen (N2) gas (Request 2 '5). According to the invention of claim 3, in the development processing method of claim 1 or 2, the number of rotations of the substrate held by the substrate holding unit is controlled in accordance with the type of the resist on the substrate on which the development process is performed. The moving speed of the developing liquid supply nozzle and the gas supply nozzle, the amount of gas discharged, and the temperature of the gas. Further, in the development processing device of the invention of claim 4, wherein the control means stores the type of the resist corresponding to the substrate on which the development process is performed, in the development processing device described in claim 4 or 5-8 - 201044440. The dissolution temperature of the image liquid controls the number of rotations of the substrate held by the substrate holding portion, the moving speed of the developing liquid supply nozzle and the gas supply nozzle, and the discharge amount of the gas, based on the control signal of the stored data. The temperature of the gas. (1) According to the invention of claim 1, 2, 4, and 5, the developer liquid supply nozzle can be supplied from the developing liquid supply nozzle from the center portion of the substrate rotating around the vertical axis to supply the liquid to the developing liquid. The gas supply nozzle supplies a gas having a temperature higher than the substrate temperature during the processing to the hem portion of the liquid of the developing liquid, and the developing liquid supply nozzle and the gas supply nozzle are moved from the center portion of the substrate to the substrate. The outer peripheral edge causes the gas supply nozzle to follow the developing liquid in the radial direction. The supply nozzle moves, so that a gas higher than the temperature of the substrate is supplied to the hem portion of the developing liquid to be held, thereby The liquid crystal is dissolved and uniformly contacted with the circuit pattern on the surface of the substrate, and development processing is performed. (2) According to the invention of claims 3 and 6, the number of rotations of the substrate held by the substrate holding portion, the developer liquid supply nozzle, and the type of the resist on the substrate subjected to the Q-image processing can be controlled. The moving speed of the gas supply nozzle, the amount of gas discharged, and the temperature of the gas, in addition to the above (1), can cause the developing liquid to more uniformly contact the circuit pattern on the surface of the substrate to perform development processing. [Effect of the Invention] According to the present invention, since it is configured as described above, the following effects can be obtained. -9 - 201044440 (1) According to the invention described in the claims 1, 2, 4, and 5, the gas is supplied to the hem portion of the liquid to be supplied at a temperature higher than the temperature of the substrate. When the liquid crystal is dissolved and uniformly contacted with the circuit pattern on the surface of the substrate to perform the development process, the developing solution of the hem portion of the liquid is activated, and the development efficiency of the developing process can be improved. (2) According to the invention of claims 3 and 6, the number of rotations of the substrate held by the substrate holding portion, the developing liquid supply nozzle, and the gas can be controlled in accordance with the type of the resist on the substrate on which the development process is performed. By supplying the moving speed of the nozzle, the amount of gas discharged, and the temperature of the gas, the developing liquid can be more uniformly contacted with the circuit pattern on the surface of the substrate to perform development processing. Therefore, imaging can be further improved in addition to the above (1). Increased processing efficiency. [Embodiment] Hereinafter, the best mode of the present invention will be described based on the drawings. Here, a case where the development processing device of the present invention is applied to a coating and development processing device will be described. As shown in FIG. 1 and FIG. 2, the processing system includes a carrier station 1' for carrying out a carrier for storing a semiconductor wafer w (hereinafter referred to as a wafer w) in which a plurality of sheets, for example, 25 substrates to be processed are sealed. The processing unit 2' is configured to apply a resist coating, a developing process, and the like to the wafer w taken out from the carrier station 1. The exposure portion 4' forms a liquid layer that transmits light on the surface of the wafer w. In this state, the surface of the wafer w is immersed in liquid; and the 10-201044440 interface is connected between the processing unit 2 and the exposure unit 4 to transfer the wafer W. The carrier station 1 is provided with a mounting portion π on which a plurality of carriers 10 can be arranged, and an opening and closing portion 1 2 which is provided on the front wall surface as viewed from the mounting portion 1 1 and a via portion 1 2 The transfer means A1 of the wafer W is taken out from the carrier 10. The dielectric surface portion 3 is configured by a first transport chamber 3A and a second transport chamber 3B which are disposed between the processing unit 2 and the exposure unit 4, and are provided with a first wafer transport unit 30A and a second wafer transport unit. 30B. Further, the processing unit 2 is surrounded by the frame body 20 on the back side of the carrier station 1, and the processing unit 2 is arranged alternately in the order from the front side to the scaffolding unit u in which the heating/cooling system is multi-staged. 1, U2, U3 and the main conveying means A2, A3 for the delivery of the wafer W between the units of the liquid processing unit U4, U5. Further, the main transport means A2, A3 are disposed in a space surrounded by the partition wall 21, and the partition wall 2 is a scaffolding unit U1, U2' U3 disposed in the front-rear direction as viewed from the carrier Q station 1. One side of the side and one side of the liquid processing unit U4'U5 on the right side, which will be described later, and the back side of the left side. Further, a temperature/humidity adjusting unit 22 is provided between the processing unit 2 and the processing unit 2 between the carrier station 1 and the processing unit 2, and the temperature and humidity adjusting unit 22 includes a temperature adjusting device for the processing liquid used in each unit or Pipes for temperature and humidity adjustment, etc. The scaffolding units U1, U2, U3 are various single-turn stacks for performing pre-processing and post-processing of the processes performed by the liquid processing units U4, U5. The composition of the plural segments, for example, 1 segment, is a combination of Heating (baking) crystal-11 - 201044440 Heating unit (HP) for round W, cooling unit (CP L) for cooling wafer W, and the like. Further, the liquid processing units U 4 and U 5 are, for example, a bottom reflection preventing film coating unit (BCT) 23 which applies an antireflection film to a chemical solution storage unit such as a resist or a developing solution as shown in Fig. 2 . The coating unit (COT) 24 and the developing unit (DEV) 25 that supplies the developing liquid to the wafer W and performs development processing are stacked in a plurality of stages, for example, five stages. The development processing device 50 of the present invention is provided in a developing unit (DEV) 25. As shown in FIG. 3 and FIG. 4, the development processing device 50 includes a rotary chuck 40 that constitutes a substrate holding portion in the outer case 51 of the carry-in port 5 1 a having the wafer W. The center of the back side of the circle W is kept horizontal. In addition, a sliding door 5 lb is provided in the opening and closing port 5 1 a. The rotating chuck 40 is coupled to a rotary drive mechanism 42 such as a servo motor via a shaft portion 41 to thereby drive the mechanism. 42 is configured to be rotatable while holding the wafer W. Further, the rotary drive mechanism 42 is a controller 60 that is electrically connected to the control means to control the number of rotations of the rotary chuck 40 in accordance with a control signal from the controller 60. Further, the cup 43 is provided so as to be able to surround the side of the wafer W held by the spin chuck 40. This cup 43 is constituted by a cylindrical outer cup 43a and a cylindrical inner cup 43b which is inclined toward the inner side, and is formed by a lifting mechanism such as a cylinder or the like which is connected to the lower end portion of the outer cup 43a. 44, the outer cup 4 3 a is raised and lowered, and the inner cup 43 is pushed up and down by a step formed on the inner peripheral surface of the lower end side of the outer cup 433 a. Further, the 'lifting mechanism 44 is electrically connected to the controller 60'. The outer cup 43a can be raised and lowered according to the control signal from the controller 6 (3 - 201044440'. Moreover, the lower side of the rotary chuck 40 is provided. There is a circular plate 45' on the outer side of the circular plate 45, and a liquid-receiving portion 46 having a concave portion in cross section is provided along the entire circumference. A drain discharge port 47' is formed on the bottom surface of the liquid collecting portion 46. The developing liquid or the cleaning liquid which is deposited or stored in the liquid collecting portion 46 is discharged to the outside of the apparatus through the drain discharge port 47. Further, a cross-sectional mountain-shaped ring is provided on the outer side of the circular plate 45. The member 48 is not shown, but is actually provided with a lift pin that penetrates the circular support plate 45, for example, three substrate support pins, and the lift pin and the substrate transfer means (not shown) interact with each other. The wafer W is transferred to the spin chuck 40. On the other hand, on the upper side of the wafer W held by the spin chuck 40, a central portion of the surface of the wafer W can be formed with a gap therebetween. In the way of the direction, there is a developing liquid supply nozzle 52 which can be moved up and down and horizontally moved (hereinafter referred to as The development nozzle 52) and the nitrogen (N2) gas supply nozzle Q53 (hereinafter referred to as N2 nozzle 53) which is a gas supply nozzle adjacent to the wafer center side of the development nozzle 52. In this case, the development nozzle 52 is a slit-shaped discharge port (not shown) having a supply (discharge) of a developing solution in a strip shape. The discharge port is disposed, for example, such that its longitudinal direction is from the center portion of the wafer W to the outer peripheral portion. The discharge port is not only extended along a straight line (radius) from the center portion of the wafer W to the outer peripheral portion, but may be slightly angled to intersect the straight line. Further, the N2 nozzle 53 has an image toward the image. The nozzle 52 supplies (discharges) the slit-shaped discharge port (not shown) of the n2 gas to the lower swing portion D2 of the liquid D D of the developing liquid D on the wafer W (see FIG. 5 (a). The discharge port of the N2 nozzle 53 201044440 is disposed, for example, such that its longitudinal direction is from the center portion to the outer peripheral portion of the wafer W. Further, the discharge port of the N2 nozzle 53 is not only along the center portion of the wafer W. When the straight line (radius) of the circumference is extended, it may be the same as the development nozzle 52. In addition, the discharge port of the development nozzle 52 is not necessarily a slit shape, and may be a circular discharge port. The development nozzle 52 integrated in a state adjacent to each other as described above. The N2 nozzle 53 is supported by one end side of the nozzle arm 54A, and the other end side of the nozzle arm 5 4 A is coupled to a moving base 55A having a lifting mechanism (not shown), and the moving base 55A is configured, for example. The nozzle moving mechanism 56A such as a ball screw or a Timing Belt moves in the lateral direction along the guiding member 57A extending in the X direction. By this configuration, the nozzle moving mechanism 5 6 A is driven, thereby developing the image. The nozzle 52 and the N2 nozzle 53 are movable along a straight line (radius) from the central portion of the wafer W to the outer peripheral portion. Further, a standby portion 59A of the development nozzle 52 is provided on one of the outer sides of the cup 43, and the standby portion 59A performs cleaning of the nozzle tip end portion of the development nozzle 52. In addition, the upper side of the wafer W held by the rotary chuck 40 is provided so that the center portion of the surface of the wafer W can be opposed to each other with a gap therebetween. The washing liquid of the washing liquid, for example, the washing nozzle 5 of pure water. The cleaning nozzle 58 is held in parallel with one end side of the nozzle arm S4B, and the other end side of the nozzle arm 54B is coupled to a moving base 55B having a lifting mechanism of -14 - 201044440 (not shown) and moved. The base 55B is configured such that the guide member 57B extending in the X direction by the nozzle moving mechanism 56B such as a ball screw or a timing belt moves in the lateral direction, that is, from the center portion of the wafer W toward the outer periphery of the substrate. In the direction of the diameter. In addition, a standby 59B of the cleaning nozzle 58 is provided on the outer side of one of the cups 43. Further, the developing nozzle 52 is connected to the developing liquid supply via the developing liquid q provided with the opening and closing valve V1 to the tube 70. Source 7 1. In this case, a temperature adjustment unit 72 composed of a double tube 72a and a heat exchange unit 7 2b is provided on the development nozzle 52 side of the development liquid supply tube 70, and temperature adjustment is performed so that the development liquid can form a predetermined temperature. On the other hand, the N2 nozzle 53 is connected to the gas supply source 74 via the N2 gas supply pipe 73 provided with the flow control valve V0. In this case, the N2 gas supply pipe 73 is provided with the N2 body temperature adjusting unit 75 so that the N2 gas can be heated at a temperature higher than the temperature of the wafer W at a predetermined temperature, for example, 30 to 50 °C. Q degree adjustment. Further, the cleaning nozzle 58 is provided with an opening and closing valve V2 in the pure water supply pipe 76 to which the cleaning nozzle 58 and the pure water supply source 77, which are the supply of the cleaning liquid, are connected. Further, the nozzle moving mechanisms 56A, 56B, the opening and closing valve VI V2, the control valve V0, the temperature adjusting unit 72, and the N2 gas temperature adjusting unit are electrically connected to the controller 60, respectively, and the configuration can be stored in the controller 60 in advance. The control signal is used to perform horizontal movement of the developing nozzle 52, horizontal movement of the cleaning nozzle 58, opening and closing valves V1 and V2, control of opening and closing of V0, temperature adjustment of the developing liquid, and N2 gas. In this case, the other side of the supply can be supplied with N2 gas temperature. 7 5 Moved valve -15- 201044440 The temperature of the developing liquid and the temperature of the N2 gas are set at the specified temperature according to the type of the resist. That is, the temperature of the developing solution and the N2 gas is such that the temperature of the developing solution is controlled in accordance with the solubility characteristics of each resist to the developing solution. Here, as an example, the temperature setting of the developing liquid corresponding to the type of the resist, for example, the resist for the KrF light source, and the type of the resist having low solubility in the developing liquid, the temperature of the developing liquid is set.値 Set to a height of, for example, 40 to 6 〇 ° C. Further, for example, when a resist for an ArF light source is used as a type of a nozzle having high solubility in a developing solution, the temperature setting of the developing liquid is set to be as low as 20 to 40 °C, for example. Further, in the case of a resist for a light source such as an I-line or a G-ray, when the solubility is promoted at a low temperature, the temperature setting 値 is set to, for example, 1 〇 to 20 °C. Further, the temperature setting of the developing liquid in the case of the EUV resist is set to 10 to 30 °C. On the other hand, the temperature of the N2 gas is set to be higher than the temperature of the wafer W during the treatment, similarly to the temperature of the above-described developing liquid. Next, an operation mode of the development processing device 50 configured as described above will be described. First, the nozzle moving mechanism 5 6 A is driven to move the developing nozzle 52 and the N2 nozzle 53 to a position above the center portion of the wafer surface, as shown in FIGS. 5 and 6 , by the developing nozzle 52 The surface of the wafer W that is rotated at a low speed, for example, 5 rpm, is supplied (discharged) by the driving of the mechanism 42, and the supply (injection) ratio is set to the hem portion d 2 of the liquid D D of the developing liquid. In a state where the temperature of the wafer w at a predetermined temperature is higher than the temperature of the N 2 gas, the development nozzle 5 2 and the N 2 nozzle 5 3 are moved along a straight line (radius) from the central portion of the wafer W to the outer peripheral edge portion. Imaging processing. By causing the N2 nozzle 53 to follow the development nozzle 52 in this manner, the image is displayed on the surface of the wafer W by the development nozzle 52 as shown in Fig. 5(a). The hem portion D2 on the wafer center side of the liquid D of the developing solution D is supplied (sprayed) by the N2 nozzle 53 to a higher temperature than the wafer W, so that the hem is as shown in Fig. 5(b). A small amount of the developing liquid of the portion D2 is dissolved and uniformly contacts the circuit pattern P formed on the surface of the wafer W, and development processing is performed. After the development process, the nozzle moving mechanism 56B is driven to move the cleaning nozzle 085 to a position above the center of the wafer surface, and the cleaning nozzle 58 supplies (discharges) the cleaning liquid, that is, pure water to the rotating wafer. The surface of W. Thereby, the developing liquid containing the dissolved component of the resist on the surface of the wafer is washed by the pure water D IW supplied (discharged) by the cleaning nozzle 58. Then, the spin drying process is performed by the driving of the rotary driving mechanism 42, and even if the wafer W is rotated at a high speed, for example, the number of revolutions is set to 2000 rpm to remove the liquid on the surface of the wafer. Next, a procedure for processing the wafer W by the above-described coating and developing device will be briefly described with reference to Figs. 1 and 2 . Here, it is explained that Q is formed on the surface of the wafer W to form a bottom reflection preventing film (B ARC), and the upper layer is coated with no upper coating resist. First, once the carrier 10, for example, which accommodates 25 wafers W, is placed on the mounting portion 11, the cover of the carrier 1〇 is uncoupled from the opening and closing portion 12, and the wafer is taken out by the transfer means A1. W. Then, the wafer W is transferred to the main conveyance means A2 via a delivery unit (not shown) constituting a section of the scaffolding unit U1, and a pre-treatment as a coating process, for example, a bottom reflection is formed on the surface of the unit (BCT) 23 Anti-film (BARC). Then, the main conveyance means A2 transports the heat treatment unit to the scaffold which constitutes one of the scaffolding units U1 to U3, and performs prebaking -17-201044440 (C LHP), and further, after cooling, by the main The transport means A2 carries the wafer W into the coating unit (C〇T) 24, and applies a top coat resist to the entire surface of the wafer W in a film form. Then, the 'heating unit' that is transported to the scaffold which is one of the scaffolding units U1 to U3 by the main transport means A2 performs prebaking (CLHP), and after cooling, passes through the delivery unit of the scaffolding unit U3. Transfer to the face 3 The interface 3' is transported to the exposure unit 4 by the first wafer transfer unit 30A and the second wafer transfer unit 30A of the first transfer chamber 3A and the second transfer chamber 3B so as to be able to be bonded to the wafer W. An exposure means (not shown) is disposed in such a manner as to face the surface to perform exposure. The wafer W on which the exposure is completed is transported to the main transport means A3 in the opposite direction, and carried into the developing unit (DEV) 25. The wafer W carried in the developing unit (DEV) 25 is supplied (discharged) to the developing liquid by the developing nozzle 52 on the surface of the wafer W by the development processing device 50 as described above. The N 2 nozzle 5 3 follows the development nozzle in a state where N 2 gas is supplied (sprayed) to the hem portion D2 of the liquid D D of the developing liquid liquid at a temperature higher than the temperature of the wafer W set to a predetermined temperature. 5 2 moving along the straight line (radius) from the central portion of the wafer W to the outer peripheral edge portion to perform development processing, and then moving the cleaning nozzle 58 to a position above the center portion of the wafer surface, and supplying it by the cleaning nozzle 58 ( The pure water is sprayed on the surface of the rotating wafer W, and the wafer W is rotated at a high speed to be dried. Then, the wafer W is carried out from the developing unit (DEV) 25 by the main transport means A 3, and is returned to the original carrier 1 on the mounting unit 11 via the main transport means A2 and the transfer means A1, thereby completing a series of Coating. Development processing. -18 - 201044440 'In addition, the above embodiment describes the formation of a bottom reflection preventing film (BARC) on the surface of the wafer W, and when a resist layer is formed on the surface thereof, even when there is no bottom reflection preventing film (BARC) The same effects as those of the above embodiment can be obtained. The processing procedure in this case is handled in the order of the resist coating engineering θ prebaking engineering-immersion exposure engineering-»·post exposure baking engineering θ developing process (development processing-washing/drying treatment). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing a whole of a processing system in which a coating and developing apparatus of a development processing apparatus of the present invention is connected to an exposure processing apparatus. Figure 2 is a schematic perspective view of the above processing system. Fig. 3 is a schematic cross-sectional view showing the development processing device of the present invention. Fig. 4 is a schematic plan view of the above development processing apparatus. Fig. 5 is a cross-sectional view (a) showing a state of development of the present invention and a large cross-sectional view (b) showing a widening of the Q. Fig. 6 is a schematic plan view showing a state of development processing of the present invention. [Description of main component symbols] W: semiconductor wafer (substrate) 40: rotary chuck (substrate holding portion) 42: rotary drive mechanism 50: development processing device 52: development nozzle (developing liquid supply nozzle) -19- 201044440 53 : N2 nozzle (gas supply nozzle) 56A : Nozzle moving mechanism 60 : Controller (control means) 75 : N2 gas temperature adjustment unit V0 : Control valve (valve mechanism) D : Development liquid D 1 : Liquid D2 : Hem -20-