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TW200727471A - Insulated gate semiconductor device and manufacturing method thereof - Google Patents

Insulated gate semiconductor device and manufacturing method thereof

Info

Publication number
TW200727471A
TW200727471A TW095117597A TW95117597A TW200727471A TW 200727471 A TW200727471 A TW 200727471A TW 095117597 A TW095117597 A TW 095117597A TW 95117597 A TW95117597 A TW 95117597A TW 200727471 A TW200727471 A TW 200727471A
Authority
TW
Taiwan
Prior art keywords
electrode layer
area
mosfet
back gate
semiconductor device
Prior art date
Application number
TW095117597A
Other languages
Chinese (zh)
Other versions
TWI304263B (en
Inventor
Hiroyasu Ishida
Tadao Mandai
Atsuya Ushida
Hiroaki Saito
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005182487A external-priority patent/JP2007005492A/en
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200727471A publication Critical patent/TW200727471A/en
Application granted granted Critical
Publication of TWI304263B publication Critical patent/TWI304263B/en

Links

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

In conventional structures, a source area and a body area (back gate area) are in contact with a common source electrode, and electric potentials of the source area and the back gate area can not be controlled individually. Therefore, when this kind of MOSFET is used for a bi-directional switching element, two MOSFETs are serially connected, and ON/OFF of the MOSFET as well as controlling of a parasitic diode are performed by a control circuit. Hence, miniaturization of device is impeded. The present invention provides an insulated gate semiconductor device wherein a first electrode layer contacting a source area and a second electrode layer contacting a body (back gate) area are provided. The first electrode layer is insulated from the second electrode layer, while the first electrode layer and the second electrode layer are respectively extended in a direction different from an extending direction of a trench. An electric potential can be applied to first electrode layer and the second electrode layer individually, so that a control for preventing a reversed flow caused by a parasitic be performed. Therefore, a bi-directional switching element can be realized with only one MOSFET.
TW95117597A 2005-06-22 2006-05-18 Insulated gate semiconductor device and manufacturing method thereof TWI304263B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005182487A JP2007005492A (en) 2005-06-22 2005-06-22 Insulated gate semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200727471A true TW200727471A (en) 2007-07-16
TWI304263B TWI304263B (en) 2008-12-11

Family

ID=45070900

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95117597A TWI304263B (en) 2005-06-22 2006-05-18 Insulated gate semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI304263B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634128B2 (en) 2014-03-17 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634128B2 (en) 2014-03-17 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
TWI304263B (en) 2008-12-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees