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TW200717861A - Gallium nitride-based compound semiconductor multilayer structure and production method thereof - Google Patents

Gallium nitride-based compound semiconductor multilayer structure and production method thereof

Info

Publication number
TW200717861A
TW200717861A TW095110847A TW95110847A TW200717861A TW 200717861 A TW200717861 A TW 200717861A TW 095110847 A TW095110847 A TW 095110847A TW 95110847 A TW95110847 A TW 95110847A TW 200717861 A TW200717861 A TW 200717861A
Authority
TW
Taiwan
Prior art keywords
layer
compound semiconductor
gallium nitride
based compound
multilayer structure
Prior art date
Application number
TW095110847A
Other languages
Chinese (zh)
Other versions
TWI304275B (en
Inventor
Hisao Sato
Hisayuki Miki
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200717861A publication Critical patent/TW200717861A/en
Application granted granted Critical
Publication of TWI304275B publication Critical patent/TWI304275B/en

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  • Semiconductor Lasers (AREA)

Abstract

The object of the present invention is to provide a gallium nitride-based compound semiconductor multilayer structure useful for manufacturing a gallium nitride-based compound semiconductor light-emitting device which requires a low operating voltage and from which a good emission output can be obtained. The present gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type layer, a light-emitting layer and a p-type layer, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly and the light-emitting layer being provided between the n-type layer and the p-type layer, wherein the well layers consisting of the multiple quantum well structure comprise a well layer having an ununiform thickness and a well layer having a uniform thickness.
TW95110847A 2005-03-31 2006-03-29 Gallium nitride-based compound semiconductor multilayer structure and production method thereof TWI304275B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005104963 2005-03-31

Publications (2)

Publication Number Publication Date
TW200717861A true TW200717861A (en) 2007-05-01
TWI304275B TWI304275B (en) 2008-12-11

Family

ID=45070903

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95110847A TWI304275B (en) 2005-03-31 2006-03-29 Gallium nitride-based compound semiconductor multilayer structure and production method thereof

Country Status (1)

Country Link
TW (1) TWI304275B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747313B (en) * 2019-07-10 2021-11-21 日商日立全球先端科技股份有限公司 Scintillator for charged particle beam device and charged particle beam device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747313B (en) * 2019-07-10 2021-11-21 日商日立全球先端科技股份有限公司 Scintillator for charged particle beam device and charged particle beam device
US11846736B2 (en) 2019-07-10 2023-12-19 Hitachi High-Tech Corporation Scintillator for charged particle beam apparatus and charged particle beam apparatus

Also Published As

Publication number Publication date
TWI304275B (en) 2008-12-11

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