TW200703336A - DRAM and method for partially refreshing memory cell array - Google Patents
DRAM and method for partially refreshing memory cell arrayInfo
- Publication number
- TW200703336A TW200703336A TW095125399A TW95125399A TW200703336A TW 200703336 A TW200703336 A TW 200703336A TW 095125399 A TW095125399 A TW 095125399A TW 95125399 A TW95125399 A TW 95125399A TW 200703336 A TW200703336 A TW 200703336A
- Authority
- TW
- Taiwan
- Prior art keywords
- pasr
- refresh
- cell
- dram
- memory cell
- Prior art date
Links
- 230000000977 initiatory effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40622—Partial refresh of memory arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050063331A KR101183684B1 (ko) | 2005-07-13 | 2005-07-13 | 디램 메모리 장치 및 부분 어레이 셀프 리프레시 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200703336A true TW200703336A (en) | 2007-01-16 |
Family
ID=37661515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095125399A TW200703336A (en) | 2005-07-13 | 2006-07-12 | DRAM and method for partially refreshing memory cell array |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7349278B2 (zh) |
| KR (1) | KR101183684B1 (zh) |
| DE (1) | DE102006033190A1 (zh) |
| TW (1) | TW200703336A (zh) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3878573B2 (ja) * | 2003-04-16 | 2007-02-07 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US7453758B2 (en) * | 2006-02-21 | 2008-11-18 | Infineon Technologies Ag | Control system for a dynamic random access memory and method of operation thereof |
| JP5623688B2 (ja) * | 2007-10-29 | 2014-11-12 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体記憶装置、および欠陥セルテスト方法 |
| KR100960479B1 (ko) * | 2007-12-24 | 2010-06-01 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 동작 방법 |
| US8468295B2 (en) * | 2009-12-02 | 2013-06-18 | Dell Products L.P. | System and method for reducing power consumption of memory |
| US20110296098A1 (en) | 2010-06-01 | 2011-12-01 | Dell Products L.P. | System and Method for Reducing Power Consumption of Memory |
| CN102376346B (zh) * | 2010-08-20 | 2014-02-12 | 华邦电子股份有限公司 | 动态随机存取存储器单元及其数据更新方法 |
| US9153310B2 (en) * | 2013-01-16 | 2015-10-06 | Maxlinear, Inc. | Dynamic random access memory for communications systems |
| US9754655B2 (en) * | 2015-11-24 | 2017-09-05 | Qualcomm Incorporated | Controlling a refresh mode of a dynamic random access memory (DRAM) die |
| US10490251B2 (en) | 2017-01-30 | 2019-11-26 | Micron Technology, Inc. | Apparatuses and methods for distributing row hammer refresh events across a memory device |
| CN112106138B (zh) | 2018-05-24 | 2024-02-27 | 美光科技公司 | 用于行锤击刷新采样的纯时间自适应采样的设备和方法 |
| US10685696B2 (en) | 2018-10-31 | 2020-06-16 | Micron Technology, Inc. | Apparatuses and methods for access based refresh timing |
| WO2020117686A1 (en) | 2018-12-03 | 2020-06-11 | Micron Technology, Inc. | Semiconductor device performing row hammer refresh operation |
| CN117198356A (zh) * | 2018-12-21 | 2023-12-08 | 美光科技公司 | 用于目标刷新操作的时序交错的设备和方法 |
| US10957377B2 (en) | 2018-12-26 | 2021-03-23 | Micron Technology, Inc. | Apparatuses and methods for distributed targeted refresh operations |
| US11615831B2 (en) | 2019-02-26 | 2023-03-28 | Micron Technology, Inc. | Apparatuses and methods for memory mat refresh sequencing |
| US11227649B2 (en) | 2019-04-04 | 2022-01-18 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of targeted refresh operations |
| US11069393B2 (en) | 2019-06-04 | 2021-07-20 | Micron Technology, Inc. | Apparatuses and methods for controlling steal rates |
| US10978132B2 (en) | 2019-06-05 | 2021-04-13 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of skipped refresh operations |
| US11302374B2 (en) | 2019-08-23 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic refresh allocation |
| US11302377B2 (en) | 2019-10-16 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic targeted refresh steals |
| US11309010B2 (en) | 2020-08-14 | 2022-04-19 | Micron Technology, Inc. | Apparatuses, systems, and methods for memory directed access pause |
| US11380382B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit |
| US11348631B2 (en) | 2020-08-19 | 2022-05-31 | Micron Technology, Inc. | Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed |
| US11557331B2 (en) | 2020-09-23 | 2023-01-17 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh operations |
| US11222686B1 (en) | 2020-11-12 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh timing |
| US11264079B1 (en) | 2020-12-18 | 2022-03-01 | Micron Technology, Inc. | Apparatuses and methods for row hammer based cache lockdown |
| US12125514B2 (en) | 2022-04-28 | 2024-10-22 | Micron Technology, Inc. | Apparatuses and methods for access based refresh operations |
| US12112787B2 (en) | 2022-04-28 | 2024-10-08 | Micron Technology, Inc. | Apparatuses and methods for access based targeted refresh operations |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4754050B2 (ja) * | 1999-08-31 | 2011-08-24 | 富士通セミコンダクター株式会社 | １対のセルにデータを記憶するｄｒａｍ |
| US6452855B1 (en) * | 2001-01-05 | 2002-09-17 | International Business Machines Corp. | DRAM array interchangeable between single-cell and twin-cell array operation |
| JP2002216471A (ja) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6590822B2 (en) * | 2001-05-07 | 2003-07-08 | Samsung Electronics Co., Ltd. | System and method for performing partial array self-refresh operation in a semiconductor memory device |
| US6650587B2 (en) * | 2001-11-19 | 2003-11-18 | Micron Technology, Inc. | Partial array self-refresh |
| JP2003338180A (ja) | 2002-05-17 | 2003-11-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR100506057B1 (ko) | 2002-07-15 | 2005-08-03 | 주식회사 하이닉스반도체 | 부분 어레이 셀프 리프레시를 수행하는 반도체 메모리 장치 |
| JP4229674B2 (ja) * | 2002-10-11 | 2009-02-25 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその制御方法 |
| JP2004221473A (ja) * | 2003-01-17 | 2004-08-05 | Renesas Technology Corp | 半導体記憶装置 |
-
2005
- 2005-07-13 KR KR1020050063331A patent/KR101183684B1/ko not_active Expired - Fee Related
-
2006
- 2006-07-11 DE DE102006033190A patent/DE102006033190A1/de not_active Ceased
- 2006-07-12 TW TW095125399A patent/TW200703336A/zh unknown
- 2006-07-12 US US11/485,565 patent/US7349278B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070008250A (ko) | 2007-01-17 |
| US7349278B2 (en) | 2008-03-25 |
| DE102006033190A1 (de) | 2007-03-15 |
| KR101183684B1 (ko) | 2012-10-18 |
| US20070014175A1 (en) | 2007-01-18 |
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