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TW200701424A - Esd protection device structure - Google Patents

Esd protection device structure

Info

Publication number
TW200701424A
TW200701424A TW094121637A TW94121637A TW200701424A TW 200701424 A TW200701424 A TW 200701424A TW 094121637 A TW094121637 A TW 094121637A TW 94121637 A TW94121637 A TW 94121637A TW 200701424 A TW200701424 A TW 200701424A
Authority
TW
Taiwan
Prior art keywords
conductive type
mos
diffusion region
protection device
esd protection
Prior art date
Application number
TW094121637A
Other languages
Chinese (zh)
Other versions
TWI271850B (en
Inventor
Ching-Hung Kao
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94121637A priority Critical patent/TWI271850B/en
Publication of TW200701424A publication Critical patent/TW200701424A/en
Application granted granted Critical
Publication of TWI271850B publication Critical patent/TWI271850B/en

Links

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

An electrostatic discharge (ESD) protective device is disclosed. The ESD protection device includes: at least a first conductive type metal-oxide semiconductor (MOS), in which the drain and source of the first conductive type MOS are electrically connected to a first power terminal and a second power terminal separately; at least a second conductive type diffusion region; and at least a dummy gate disposed between the first conductive type MOS and the second conductive type diffusion region, in which the gate length of the dummy gate is less than the gate length of the first conductive type MOS gate, such that the junction between the second conductive type diffusion region and the drain of the first conductive type MOS have a low breakdown voltage.
TW94121637A 2005-06-28 2005-06-28 ESD protection device structure TWI271850B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94121637A TWI271850B (en) 2005-06-28 2005-06-28 ESD protection device structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94121637A TWI271850B (en) 2005-06-28 2005-06-28 ESD protection device structure

Publications (2)

Publication Number Publication Date
TW200701424A true TW200701424A (en) 2007-01-01
TWI271850B TWI271850B (en) 2007-01-21

Family

ID=38435335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94121637A TWI271850B (en) 2005-06-28 2005-06-28 ESD protection device structure

Country Status (1)

Country Link
TW (1) TWI271850B (en)

Also Published As

Publication number Publication date
TWI271850B (en) 2007-01-21

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Legal Events

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