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TW200640032A - Substrate-free flip chip light emitting diode and manufacturing method thereof - Google Patents

Substrate-free flip chip light emitting diode and manufacturing method thereof

Info

Publication number
TW200640032A
TW200640032A TW094114854A TW94114854A TW200640032A TW 200640032 A TW200640032 A TW 200640032A TW 094114854 A TW094114854 A TW 094114854A TW 94114854 A TW94114854 A TW 94114854A TW 200640032 A TW200640032 A TW 200640032A
Authority
TW
Taiwan
Prior art keywords
substrate
manufacturing
light emitting
emitting diode
flip chip
Prior art date
Application number
TW094114854A
Other languages
Chinese (zh)
Other versions
TWI246786B (en
Inventor
Ching-Chung Chen
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to TW094114854A priority Critical patent/TWI246786B/en
Application granted granted Critical
Publication of TWI246786B publication Critical patent/TWI246786B/en
Priority to DE102006019373A priority patent/DE102006019373A1/en
Priority to GB0608131A priority patent/GB2426123B/en
Priority to GB0708932A priority patent/GB2437848B/en
Priority to FR0651612A priority patent/FR2885455A1/en
Publication of TW200640032A publication Critical patent/TW200640032A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

A substrate-free LED device is provided. The LED device comprises a substrate, an epitaxial layer disposed on the substrate, a first electrode disposed on a portion of the epitaxial layer, a second electrode disposed on another portion of the epitaxial layer, and a protection layer, disposed over the epitaxial layer. It is noted that in the LED device, the substrate comprises, for example but not limited to, high heat-sink substrate, and the protection layer comprises, for example but not limited to, high heat-sink, high transparent material.
TW094114854A 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof TWI246786B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW094114854A TWI246786B (en) 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof
DE102006019373A DE102006019373A1 (en) 2005-05-09 2006-04-23 Substrate-free flip chip light emitting diode and method for its production
GB0608131A GB2426123B (en) 2005-05-09 2006-04-25 Substrate-free flip chip light emitting diode and manufacturing method thereof
GB0708932A GB2437848B (en) 2005-05-09 2006-04-25 Substrate-free chip light emitting diode and manufacturing method thereof
FR0651612A FR2885455A1 (en) 2005-05-09 2006-05-04 RETURNED CHIP ELECTROLUMINESCENT DIODE WITHOUT SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094114854A TWI246786B (en) 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI246786B TWI246786B (en) 2006-01-01
TW200640032A true TW200640032A (en) 2006-11-16

Family

ID=36589747

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094114854A TWI246786B (en) 2005-05-09 2005-05-09 Substrate-free flip chip light emitting diode and manufacturing method thereof

Country Status (4)

Country Link
DE (1) DE102006019373A1 (en)
FR (1) FR2885455A1 (en)
GB (1) GB2426123B (en)
TW (1) TWI246786B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569472B (en) * 2011-03-17 2017-02-01 晶元光電股份有限公司 Illuminating device
TWI635605B (en) * 2017-11-02 2018-09-11 Pixeled Display Co., Ltd. Miniature LED display panel
TWI646701B (en) * 2017-09-29 2019-01-01 鼎元光電科技股份有限公司 Light-emitting diode without substrate and manufacturing method thereof
TWI898845B (en) * 2023-09-25 2025-09-21 韓國光技術院 Light emitting element and manufacturing method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008006757A1 (en) 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Surface-mountable component e.g. thin film LED, for being assembled on mother board i.e. printed circuit board, has semiconductor chip with rear side contact connected with contact structure that is arranged on surface of substrate
DE102008021402B4 (en) 2008-04-29 2023-08-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Surface mount light emitting diode module and method for manufacturing a surface mount light emitting diode module
DE102009060759A1 (en) 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 A radiation-emitting device, module with a radiation-emitting device and method for producing a radiation-emitting device
CN109671810A (en) * 2017-10-16 2019-04-23 鼎元光电科技股份有限公司 Light emitting diode and its manufacturing method without substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154774A (en) * 1997-08-05 1999-06-08 Canon Inc Method for manufacturing surface-emitting semiconductor device, surface-emitting semiconductor device manufactured by this method, and display device using this device
US20040211972A1 (en) * 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
US6806112B1 (en) * 2003-09-22 2004-10-19 National Chung-Hsing University High brightness light emitting diode
US20050191777A1 (en) * 2003-09-22 2005-09-01 National Chung-Hsing University Method for producing light emitting diode with plated substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569472B (en) * 2011-03-17 2017-02-01 晶元光電股份有限公司 Illuminating device
US9601657B2 (en) 2011-03-17 2017-03-21 Epistar Corporation Light-emitting device
TWI646701B (en) * 2017-09-29 2019-01-01 鼎元光電科技股份有限公司 Light-emitting diode without substrate and manufacturing method thereof
TWI635605B (en) * 2017-11-02 2018-09-11 Pixeled Display Co., Ltd. Miniature LED display panel
TWI898845B (en) * 2023-09-25 2025-09-21 韓國光技術院 Light emitting element and manufacturing method thereof

Also Published As

Publication number Publication date
GB2426123A (en) 2006-11-15
GB0608131D0 (en) 2006-06-07
DE102006019373A1 (en) 2006-11-23
FR2885455A1 (en) 2006-11-10
GB2426123B (en) 2007-09-26
TWI246786B (en) 2006-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees