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TW200629486A - Semiconductor device and method for producing same - Google Patents

Semiconductor device and method for producing same

Info

Publication number
TW200629486A
TW200629486A TW094133778A TW94133778A TW200629486A TW 200629486 A TW200629486 A TW 200629486A TW 094133778 A TW094133778 A TW 094133778A TW 94133778 A TW94133778 A TW 94133778A TW 200629486 A TW200629486 A TW 200629486A
Authority
TW
Taiwan
Prior art keywords
light transmission
transmission material
element region
semiconductor
semiconductor substrate
Prior art date
Application number
TW094133778A
Other languages
English (en)
Other versions
TWI301321B (zh
Inventor
Atsushi Ono
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200629486A publication Critical patent/TW200629486A/zh
Application granted granted Critical
Publication of TWI301321B publication Critical patent/TWI301321B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10P72/74—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10P72/7438—
    • H10W72/884—
    • H10W90/734—
    • H10W90/754—

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Led Device Packages (AREA)
TW094133778A 2004-10-04 2005-09-28 Semiconductor device and method for producing same TW200629486A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004291261A JP4381274B2 (ja) 2004-10-04 2004-10-04 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200629486A true TW200629486A (en) 2006-08-16
TWI301321B TWI301321B (zh) 2008-09-21

Family

ID=36124625

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133778A TW200629486A (en) 2004-10-04 2005-09-28 Semiconductor device and method for producing same

Country Status (4)

Country Link
US (1) US20060071152A1 (zh)
JP (1) JP4381274B2 (zh)
KR (1) KR100656327B1 (zh)
TW (1) TW200629486A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387083B (zh) * 2007-12-27 2013-02-21 東芝股份有限公司 包含貫穿孔電極與光傳輸基板的半導體封裝

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CN101065844B (zh) * 2005-01-04 2010-12-15 株式会社映煌 固体摄像装置及其制造方法
JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
JP2008103460A (ja) * 2006-10-18 2008-05-01 Sony Corp 半導体パッケージ及びその製造方法
US8076744B2 (en) * 2007-01-25 2011-12-13 Chien-Hung Liu Photosensitizing chip package and manufacturing method thereof
JP2009010261A (ja) 2007-06-29 2009-01-15 Fujikura Ltd 半導体パッケージおよびその製造方法
JP2009021307A (ja) * 2007-07-10 2009-01-29 Sharp Corp 半導体装置、撮像装置、およびそれらの製造方法
JP2009064839A (ja) * 2007-09-04 2009-03-26 Panasonic Corp 光学デバイス及びその製造方法
WO2009081763A1 (ja) * 2007-12-25 2009-07-02 Fujikura Ltd. 半導体装置及びその製造方法
JP2010040621A (ja) * 2008-08-01 2010-02-18 Toshiba Corp 固体撮像デバイス及びその製造方法
US8125042B2 (en) 2008-11-13 2012-02-28 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
US9142586B2 (en) 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
WO2011142059A1 (ja) * 2010-05-12 2011-11-17 パナソニック株式会社 半導体装置及びその製造方法
JP5706357B2 (ja) * 2012-02-24 2015-04-22 富士フイルム株式会社 基板モジュールおよびその製造方法
US9142695B2 (en) * 2013-06-03 2015-09-22 Optiz, Inc. Sensor package with exposed sensor array and method of making same
US9664874B2 (en) * 2013-07-30 2017-05-30 Kyocera Corporation Substrate for mounting imaging element, and imaging device
US10388684B2 (en) 2016-10-04 2019-08-20 Semiconductor Components Industries, Llc Image sensor packages formed using temporary protection layers and related methods
JP6465153B2 (ja) * 2017-05-25 2019-02-06 株式会社ニコン 撮像ユニット及び撮像装置
US11756977B2 (en) 2018-06-21 2023-09-12 Semiconductor Components Industries, Llc Backside illumination image sensors
JP2022039099A (ja) * 2020-08-27 2022-03-10 ソニーセミコンダクタソリューションズ株式会社 パッケージ、及びその製造方法
US11637211B2 (en) 2021-02-02 2023-04-25 Rockwell Collins, Inc. Optically clear thermal spreader for status indication within an electronics package
WO2023162713A1 (ja) * 2022-02-22 2023-08-31 ソニーセミコンダクタソリューションズ株式会社 半導体装置、電子機器および半導体装置の製造方法
WO2025115391A1 (ja) * 2023-11-27 2025-06-05 ソニーセミコンダクタソリューションズ株式会社 パッケージおよびパッケージの製造方法

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP2744273B2 (ja) * 1988-02-09 1998-04-28 キヤノン株式会社 光電変換装置の製造方法
US5834799A (en) * 1989-08-28 1998-11-10 Lsi Logic Optically transmissive preformed planar structures
GB9818474D0 (en) * 1998-08-26 1998-10-21 Hughes John E Multi-layer interconnect package for optical devices & standard semiconductor chips
US6215180B1 (en) * 1999-03-17 2001-04-10 First International Computer Inc. Dual-sided heat dissipating structure for integrated circuit package
JP2002094082A (ja) * 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器
JP3915873B2 (ja) * 2000-11-10 2007-05-16 セイコーエプソン株式会社 光学装置の製造方法
US6849916B1 (en) * 2000-11-15 2005-02-01 Amkor Technology, Inc. Flip chip on glass sensor package
US7242088B2 (en) * 2000-12-29 2007-07-10 Intel Corporation IC package pressure release apparatus and method
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
JP2004363380A (ja) * 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP3782406B2 (ja) * 2003-07-01 2006-06-07 松下電器産業株式会社 固体撮像装置およびその製造方法
US7262405B2 (en) * 2004-06-14 2007-08-28 Micron Technology, Inc. Prefabricated housings for microelectronic imagers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387083B (zh) * 2007-12-27 2013-02-21 東芝股份有限公司 包含貫穿孔電極與光傳輸基板的半導體封裝

Also Published As

Publication number Publication date
TWI301321B (zh) 2008-09-21
JP4381274B2 (ja) 2009-12-09
KR100656327B1 (ko) 2006-12-13
US20060071152A1 (en) 2006-04-06
KR20060051943A (ko) 2006-05-19
JP2006108285A (ja) 2006-04-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees