TW200611073A - Method using T-shaped photoresist patterns to form reduced wiring figures - Google Patents
Method using T-shaped photoresist patterns to form reduced wiring figuresInfo
- Publication number
- TW200611073A TW200611073A TW093128182A TW93128182A TW200611073A TW 200611073 A TW200611073 A TW 200611073A TW 093128182 A TW093128182 A TW 093128182A TW 93128182 A TW93128182 A TW 93128182A TW 200611073 A TW200611073 A TW 200611073A
- Authority
- TW
- Taiwan
- Prior art keywords
- patterns
- chemical enhanced
- wiring figures
- enhanced photoresist
- photoresist patterns
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 8
- 238000000034 method Methods 0.000 title abstract 4
- 239000000126 substance Substances 0.000 abstract 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 3
- 229910021529 ammonia Inorganic materials 0.000 abstract 2
- -1 hydrogen ions Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000009877 rendering Methods 0.000 abstract 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
This invention discloses a method using T-shaped photoresist patterns to form reduced wiring figures, which implements the principle that hydroxyl radical of the compositions of the chemical enhanced photoresist must involve in the reaction while using chemical enhanced photoresist layer in forming patterns, in order to render the exposed patterns, so as to form an chemical enhanced photoresist layer over a semiconductor substrate. A gas containing ammonia would cause hydrogen ions on the top of the chemical enhanced photoresist to be captured by ammonia ions, preventing the top of the chemical enhanced photoresist layer from involving in the reaction in forming the patterns, thereby rendering T-shaped photoresist patterns. As such, a wiring figure having a dimension that is smaller than that obtained from conventional process upon depositing wiring figures over the semiconductor substrate at a subsequent processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093128182A TW200611073A (en) | 2004-09-17 | 2004-09-17 | Method using T-shaped photoresist patterns to form reduced wiring figures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093128182A TW200611073A (en) | 2004-09-17 | 2004-09-17 | Method using T-shaped photoresist patterns to form reduced wiring figures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200611073A true TW200611073A (en) | 2006-04-01 |
Family
ID=57807637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093128182A TW200611073A (en) | 2004-09-17 | 2004-09-17 | Method using T-shaped photoresist patterns to form reduced wiring figures |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200611073A (en) |
-
2004
- 2004-09-17 TW TW093128182A patent/TW200611073A/en unknown
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