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TW200801857A - Photoresist stripping liquid and method for processing substrate using the liquid - Google Patents

Photoresist stripping liquid and method for processing substrate using the liquid

Info

Publication number
TW200801857A
TW200801857A TW096122574A TW96122574A TW200801857A TW 200801857 A TW200801857 A TW 200801857A TW 096122574 A TW096122574 A TW 096122574A TW 96122574 A TW96122574 A TW 96122574A TW 200801857 A TW200801857 A TW 200801857A
Authority
TW
Taiwan
Prior art keywords
liquid
photoresist stripping
processing substrate
mass
stripping liquid
Prior art date
Application number
TW096122574A
Other languages
Chinese (zh)
Inventor
Akira Kumazawa
Takuya Ohhashi
Yoshihiro Sawada
Takayuki Haraguchi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200801857A publication Critical patent/TW200801857A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H10P76/2041—

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Liquid Crystal (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention mainly provides a photoresist stripping liquid that does not corrode a substrate where a metal layer containing silver is formed, or a substrate where a metal layer containing other metals is formed, and that effectively removes a photoresist film. The photoresist stripping liquid contains (A) N,N-diethylhydroxylamine by 0.5-20 mass%, (B) alkanolamine by 10-90 mass%, and (C) a water-soluble organic solvent by 10-90 mass%.
TW096122574A 2006-06-23 2007-06-22 Photoresist stripping liquid and method for processing substrate using the liquid TW200801857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006174304A JP2008003399A (en) 2006-06-23 2006-06-23 Photoresist stripping solution and substrate processing method using the same

Publications (1)

Publication Number Publication Date
TW200801857A true TW200801857A (en) 2008-01-01

Family

ID=38991670

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122574A TW200801857A (en) 2006-06-23 2007-06-22 Photoresist stripping liquid and method for processing substrate using the liquid

Country Status (4)

Country Link
JP (1) JP2008003399A (en)
KR (1) KR20070122141A (en)
CN (1) CN101093364A (en)
TW (1) TW200801857A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102227687A (en) * 2008-12-25 2011-10-26 长瀬化成株式会社 Photoresist remover composition, method for removing photoresist of multilayer metal circuit board, and method for producing multilayer metal circuit board
JP5404459B2 (en) * 2010-02-08 2014-01-29 東京応化工業株式会社 Lithographic cleaning liquid and wiring forming method
CN102141743A (en) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 Photoresist peeling solution composition with metal protection
TW201335724A (en) * 2012-02-23 2013-09-01 Chi Mei Corp Photoresist stripper composition and application thereof
KR101586453B1 (en) * 2014-08-20 2016-01-21 주식회사 엘지화학 Stripper composition for removing photoresist and stripping method of photoresist using the same
KR20170111411A (en) * 2016-03-28 2017-10-12 동우 화인켐 주식회사 Resist stripper composition, and method for manufacturing a plat panel for a display device and plat panel for a display device, and display device
CN109378271B (en) * 2018-10-22 2021-01-26 京东方科技集团股份有限公司 Preparation method of patterned metal film layer, thin film transistor and display substrate
CN110029331B (en) * 2019-04-24 2020-09-18 南昌大学 A sensitizing solution for electroless copper plating of non-metallic materials and its sensitizing process
CN112540515B (en) * 2020-12-16 2023-11-21 江苏艾森半导体材料股份有限公司 Photoresist photoresist stripping solution and preparation method and application thereof

Also Published As

Publication number Publication date
JP2008003399A (en) 2008-01-10
CN101093364A (en) 2007-12-26
KR20070122141A (en) 2007-12-28

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