TW200603901A - Method of forming a metal layer - Google Patents
Method of forming a metal layerInfo
- Publication number
- TW200603901A TW200603901A TW094110221A TW94110221A TW200603901A TW 200603901 A TW200603901 A TW 200603901A TW 094110221 A TW094110221 A TW 094110221A TW 94110221 A TW94110221 A TW 94110221A TW 200603901 A TW200603901 A TW 200603901A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- forming
- substrate
- metal
- exposing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 239000002184 metal Substances 0.000 title abstract 4
- 229910052751 metal Inorganic materials 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 5
- 239000002243 precursor Substances 0.000 abstract 2
- 229910021012 Co2(CO)8 Inorganic materials 0.000 abstract 1
- 229910019813 Cr(CO)6 Inorganic materials 0.000 abstract 1
- 229910017333 Mo(CO)6 Inorganic materials 0.000 abstract 1
- 229910008940 W(CO)6 Inorganic materials 0.000 abstract 1
- LVGLLYVYRZMJIN-UHFFFAOYSA-N carbon monoxide;rhodium Chemical compound [Rh].[Rh].[Rh].[Rh].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] LVGLLYVYRZMJIN-UHFFFAOYSA-N 0.000 abstract 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical compound [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/813,680 US20050221000A1 (en) | 2004-03-31 | 2004-03-31 | Method of forming a metal layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200603901A true TW200603901A (en) | 2006-02-01 |
Family
ID=34961769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094110221A TW200603901A (en) | 2004-03-31 | 2005-03-31 | Method of forming a metal layer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20050221000A1 (zh) |
| EP (1) | EP1733069A1 (zh) |
| JP (1) | JP2007530797A (zh) |
| KR (1) | KR20070000436A (zh) |
| CN (1) | CN1906325A (zh) |
| TW (1) | TW200603901A (zh) |
| WO (1) | WO2005103323A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI471929B (zh) * | 2007-07-11 | 2015-02-01 | Ｓｏｓｕｌ股份有限公司 | 電漿蝕刻設備與蝕刻晶圓之方法 |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4590402B2 (ja) * | 2004-04-30 | 2010-12-01 | 株式会社荏原製作所 | 基板の処理装置 |
| US7351285B2 (en) * | 2005-03-29 | 2008-04-01 | Tokyo Electron Limited | Method and system for forming a variable thickness seed layer |
| DE102006009822B4 (de) * | 2006-03-01 | 2013-04-18 | Schott Ag | Verfahren zur Plasmabehandlung von Glasoberflächen, dessen Verwendung sowie Glassubstrat und dessen Verwendung |
| US7713907B2 (en) * | 2006-03-06 | 2010-05-11 | Uchicago Argonne, Llc | Method of preparing size-selected metal clusters |
| US20070224708A1 (en) * | 2006-03-21 | 2007-09-27 | Sowmya Krishnan | Mass pulse sensor and process-gas system and method |
| US20080063798A1 (en) * | 2006-08-30 | 2008-03-13 | Kher Shreyas S | Precursors and hardware for cvd and ald |
| US8715455B2 (en) * | 2007-02-06 | 2014-05-06 | Tokyo Electron Limited | Multi-zone gas distribution system for a treatment system |
| US7829454B2 (en) * | 2007-09-11 | 2010-11-09 | Tokyo Electron Limited | Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device |
| US8137467B2 (en) | 2007-10-16 | 2012-03-20 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| KR101016021B1 (ko) * | 2008-07-29 | 2011-02-23 | 주식회사 테라세미콘 | 화학기상 증착장치 |
| JP2010067638A (ja) * | 2008-09-08 | 2010-03-25 | Tokyo Electron Ltd | ルテニウム膜の成膜方法 |
| DE102009023381A1 (de) * | 2009-05-29 | 2010-12-02 | Grega, Samuel | Verfahren zur Herstellung von W-, Cr-, Mo-Schichten, deren Carbiden, Nitriden, Siliciden, mehrschichtigen Strukturen und Verbindungsstrukturen auf festen Substraten und Vorrichtung für deren Herstellung |
| EP2256230A1 (de) * | 2009-05-29 | 2010-12-01 | Samuel Grega | Verfahren zur Herstellung von W-, Cr-, Mo-Schichten, deren Carbiden, Nitriden, Siliciden, mehrschictigen Strukturen und Verbindungsstrukturen auf festen Substraten und Vorrichtung für deren Herstellung |
| JP2012102404A (ja) * | 2009-10-30 | 2012-05-31 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| JP4943536B2 (ja) * | 2009-10-30 | 2012-05-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
| US9034142B2 (en) | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
| CN102534551B (zh) * | 2010-12-17 | 2014-08-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 半导体设备 |
| CN102140625B (zh) * | 2011-01-05 | 2013-07-17 | 景德镇陶瓷学院 | 一种采用羰基钨为前驱体制备用于聚变堆中面向等离子体钨涂层的方法 |
| KR101937115B1 (ko) | 2011-03-04 | 2019-01-09 | 노벨러스 시스템즈, 인코포레이티드 | 하이브리드 세라믹 샤워헤드 |
| CN102534569A (zh) * | 2011-12-23 | 2012-07-04 | 嘉兴科民电子设备技术有限公司 | 一种常压辉光等离子体增强原子层沉积装置 |
| JP2013182961A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
| JP5859885B2 (ja) * | 2012-03-15 | 2016-02-16 | 大陽日酸株式会社 | 金属多層膜の成膜方法および金属多層膜の成膜装置 |
| EP2880963A4 (en) * | 2012-08-06 | 2015-08-12 | Goji Ltd | METHOD FOR DETECTING DARK DISCHARGE AND DEVICE USING THIS METHOD |
| CN103337469B (zh) * | 2013-06-15 | 2015-10-28 | 复旦大学 | 一种原位沉积阻挡层和籽晶层的系统和方法 |
| KR20150093384A (ko) | 2014-02-07 | 2015-08-18 | 에스케이하이닉스 주식회사 | 저저항 텅스텐계 매립게이트구조물을 갖는 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
| US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| CN104148629B (zh) * | 2014-08-15 | 2017-01-18 | 江西悦安超细金属有限公司 | 一种基于羰基金属络合物的3d打印快速成型装置及方法 |
| JP6014807B2 (ja) | 2014-11-20 | 2016-10-26 | 株式会社プラズマイオンアシスト | 燃料電池用セパレータ又は燃料電池用集電部材、及びその製造方法 |
| WO2016118431A1 (en) | 2015-01-19 | 2016-07-28 | Entegris, Inc. | Small volume, long pathlength multi-pass gas cell for ir and uv monitoring |
| US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| CN109417022B (zh) * | 2016-06-28 | 2023-08-11 | 应用材料公司 | 用于3d nand存储器器件的基于cvd的氧化物-金属多结构 |
| CN108147460B (zh) * | 2017-12-26 | 2020-05-05 | 佛山科学技术学院 | 一种三氧化钼纳米管的制备方法 |
| CN108128807B (zh) * | 2017-12-26 | 2020-05-05 | 佛山科学技术学院 | 一种三氧化钨纳米管的制备方法 |
| FI130416B (en) | 2019-06-28 | 2023-08-21 | Beneq Oy | Precursor source arrangement and atomic layer growth apparatus |
| WO2021042116A1 (en) | 2019-08-23 | 2021-03-04 | Lam Research Corporation | Thermally controlled chandelier showerhead |
| CN114641592B (zh) | 2019-08-28 | 2025-01-17 | 朗姆研究公司 | 金属沉积 |
| KR102213739B1 (ko) | 2020-04-07 | 2021-02-08 | 안승근 | 수도 연결 구조체 |
| US20210381107A1 (en) * | 2020-06-03 | 2021-12-09 | Micron Technology, Inc. | Material deposition systems, and related methods and microelectronic devices |
| US12503764B2 (en) * | 2021-09-28 | 2025-12-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11939668B2 (en) * | 2022-04-26 | 2024-03-26 | Applied Materials, Inc. | Gas delivery for tungsten-containing layer |
| WO2025226635A1 (en) * | 2024-04-25 | 2025-10-30 | Applied Materials, Inc. | Methods for depositing a tungsten-containing layer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2616088B1 (fr) * | 1987-06-03 | 1991-07-05 | Rifa Sa | Procede et installation pour traiter la surface d'objets |
| FR2664294B1 (fr) * | 1990-07-06 | 1992-10-23 | Plasmametal | Procede de metallisation d'une surface. |
| FR2756663B1 (fr) * | 1996-12-04 | 1999-02-26 | Berenguer Marc | Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface |
| US7155061B2 (en) * | 2000-08-22 | 2006-12-26 | Microsoft Corporation | Method and system for searching for words and phrases in active and stored ink word documents |
| US20030019428A1 (en) * | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
| JP4031704B2 (ja) * | 2002-12-18 | 2008-01-09 | 東京エレクトロン株式会社 | 成膜方法 |
-
2004
- 2004-03-31 US US10/813,680 patent/US20050221000A1/en not_active Abandoned
-
2005
- 2005-02-08 CN CNA2005800018752A patent/CN1906325A/zh active Pending
- 2005-02-08 JP JP2007506156A patent/JP2007530797A/ja not_active Withdrawn
- 2005-02-08 EP EP05722763A patent/EP1733069A1/en not_active Withdrawn
- 2005-02-08 KR KR1020067014711A patent/KR20070000436A/ko not_active Withdrawn
- 2005-02-08 WO PCT/US2005/003669 patent/WO2005103323A1/en not_active Ceased
- 2005-03-31 TW TW094110221A patent/TW200603901A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI471929B (zh) * | 2007-07-11 | 2015-02-01 | Ｓｏｓｕｌ股份有限公司 | 電漿蝕刻設備與蝕刻晶圓之方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007530797A (ja) | 2007-11-01 |
| US20050221000A1 (en) | 2005-10-06 |
| CN1906325A (zh) | 2007-01-31 |
| EP1733069A1 (en) | 2006-12-20 |
| KR20070000436A (ko) | 2007-01-02 |
| WO2005103323A1 (en) | 2005-11-03 |
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