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TW200704818A - Process for forming zinc oxide film - Google Patents

Process for forming zinc oxide film

Info

Publication number
TW200704818A
TW200704818A TW095118928A TW95118928A TW200704818A TW 200704818 A TW200704818 A TW 200704818A TW 095118928 A TW095118928 A TW 095118928A TW 95118928 A TW95118928 A TW 95118928A TW 200704818 A TW200704818 A TW 200704818A
Authority
TW
Taiwan
Prior art keywords
oxide film
zinc oxide
forming zinc
supplying
gas
Prior art date
Application number
TW095118928A
Other languages
Chinese (zh)
Other versions
TWI332531B (en
Inventor
Yukichi Takamatsu
Toshio Akiyama
Original Assignee
Japan Pionics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Pionics filed Critical Japan Pionics
Publication of TW200704818A publication Critical patent/TW200704818A/en
Application granted granted Critical
Publication of TWI332531B publication Critical patent/TWI332531B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A process for forming zinc oxide film over a surface of a substrate which comprises a step of vaporising and supplying a materilal prepared by dissolving dimethylzinc or diethylzinc into an organic solvent to a chemical vapor deposition apparatus and a step of simultaneously supplying a gas comprising an oxidizing agent gas to the chemical vapor deposition apparatus. A process for forming zinc oxide film over a surface of a substrate which comprises both a step of supplying a vaporized gas of dimethylzinc or diethylzinc and a step of supplying a gas comprising an oxidizing agent gas alternately to a chemical vapor deposition apparatus. A process for forming zinc oxide film of extremely high quality and high purity on surfaces of various kinds of substrates safely in accordance with the CVD method is provided.
TW095118928A 2005-06-01 2006-05-29 Process for forming zinc oxide film TWI332531B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005161187A JP4699092B2 (en) 2005-06-01 2005-06-01 Method for forming zinc oxide film

Publications (2)

Publication Number Publication Date
TW200704818A true TW200704818A (en) 2007-02-01
TWI332531B TWI332531B (en) 2010-11-01

Family

ID=36928153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118928A TWI332531B (en) 2005-06-01 2006-05-29 Process for forming zinc oxide film

Country Status (7)

Country Link
US (1) US20060275948A1 (en)
EP (1) EP1728893B1 (en)
JP (1) JP4699092B2 (en)
KR (1) KR20060125500A (en)
CN (1) CN1873051A (en)
DE (1) DE602006021256D1 (en)
TW (1) TWI332531B (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0518383D0 (en) * 2005-09-09 2005-10-19 Pilkington Plc Deposition process
WO2008007770A1 (en) * 2006-07-14 2008-01-17 Dai Nippon Printing Co., Ltd. Transparent conducting layer coated film and its use
US7491575B2 (en) * 2006-08-02 2009-02-17 Xerox Corporation Fabricating zinc oxide semiconductor using hydrolysis
JP4616359B2 (en) * 2007-01-09 2011-01-19 韓國電子通信研究院 Method for forming ZnO semiconductor film for electronic device and thin film transistor including the semiconductor film
KR100966081B1 (en) * 2008-01-03 2010-06-25 아주대학교산학협력단 Method of zinc oxide thin film and method of forming thin film transistor using same
JP5200551B2 (en) 2008-01-18 2013-06-05 東京エレクトロン株式会社 Vaporized raw material supply apparatus, film forming apparatus, and vaporized raw material supply method
CN102165097A (en) 2008-09-24 2011-08-24 东芝三菱电机产业系统株式会社 Film-forming method of zinc oxide film (ZnO) or magnesium-zinc oxide film (ZnMgO) and film-forming device of zinc oxide film or magnesium-zinc oxide film
JP5674186B2 (en) * 2010-02-16 2015-02-25 国立大学法人 宮崎大学 Zinc oxide thin film production method, and antistatic thin film, ultraviolet cut thin film, transparent electrode thin film produced by this method
TWI465401B (en) * 2009-04-21 2014-12-21 Tosoh Finechem Corp "dope or undoped zinc oxide thin film manufacturing method and a method for producing the zinc oxide thin film using the same
KR101743308B1 (en) * 2009-04-21 2017-06-02 토소 화인켐 가부시키가이샤 Composition for forming doped or non-doped zinc oxide thin film, and method for producing zinc oxide thin film using same
JP5515144B2 (en) * 2009-05-12 2014-06-11 東ソー・ファインケム株式会社 Composition for forming doped zinc oxide thin film and method for producing doped zinc oxide thin film
WO2010131621A1 (en) * 2009-05-12 2010-11-18 国立大学法人 宮崎大学 Composition for production of doped zinc oxide thin film, process for production of zinc oxide thin film, antistatic thin film, ultraviolet ray blocking thin film, and transparent electrode thin film
WO2011047114A1 (en) * 2009-10-15 2011-04-21 Arkema Inc. Deposition of doped zno films on polymer substrates by uv-assisted chemical vapor deposition
DE102012203212B4 (en) * 2012-03-01 2025-02-27 Osram Oled Gmbh COATING SYSTEM AND METHOD FOR CARRYING OUT A GROWTH PROCESS
CN104379806B (en) * 2012-03-16 2017-06-09 皮尔金顿集团有限公司 Chemical vapor deposition method for depositing zinc oxide coatings, the method for forming conductive glass articles and the coated glass article being thus made
KR20140046617A (en) * 2012-10-09 2014-04-21 삼성코닝정밀소재 주식회사 Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
KR101466842B1 (en) * 2012-11-28 2014-11-28 코닝정밀소재 주식회사 Method of fabricating zinc oxide based thin film for transparent electrode
KR20150019623A (en) * 2013-08-14 2015-02-25 코닝정밀소재 주식회사 Method of depositing zinc oxide based thin film
JP6564994B2 (en) * 2015-08-26 2019-08-28 株式会社アルバック Antibacterial member forming method and antibacterial member
EP3715499A1 (en) * 2019-03-29 2020-09-30 Picosun Oy Substrate coating

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682625B2 (en) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． Deposition method of zinc oxide film
JPS62284078A (en) * 1987-05-22 1987-12-09 Oki Electric Ind Co Ltd Chemical vapor growth method
US5126921A (en) * 1990-07-06 1992-06-30 Akira Fujishima Electronic component and a method for manufacturing the same
JP2545306B2 (en) * 1991-03-11 1996-10-16 誠 小長井 Method for producing ZnO transparent conductive film
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
JP3394488B2 (en) 2000-01-24 2003-04-07 星和電機株式会社 Gallium nitride based semiconductor light emitting device and method of manufacturing the same
US7368014B2 (en) * 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
KR20030025354A (en) 2001-09-20 2003-03-29 한국과학기술연구원 Fabrication method of blue light emitting ZnO thin film phosphor
JP2004323941A (en) 2003-04-25 2004-11-18 Central Glass Co Ltd Method of depositing zinc oxide film
US7192802B2 (en) * 2004-10-29 2007-03-20 Sharp Laboratories Of America, Inc. ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate

Also Published As

Publication number Publication date
DE602006021256D1 (en) 2011-05-26
EP1728893B1 (en) 2011-04-13
KR20060125500A (en) 2006-12-06
EP1728893A2 (en) 2006-12-06
EP1728893A3 (en) 2007-09-05
US20060275948A1 (en) 2006-12-07
JP4699092B2 (en) 2011-06-08
JP2006336062A (en) 2006-12-14
TWI332531B (en) 2010-11-01
CN1873051A (en) 2006-12-06

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees